U.S. patent application number 14/086054 was filed with the patent office on 2014-03-13 for magnetic tunnel junction (mtj) on planarized electrode.
This patent application is currently assigned to QUALCOMM Incorporated. The applicant listed for this patent is QUALCOMM Incorporated. Invention is credited to Wei-Chuan Chen, Wah Nam Hsu, Seung Hyuk Kang, Kangho Lee, Xia Li, Xiaochun Zhu.
Application Number | 20140073064 14/086054 |
Document ID | / |
Family ID | 44276961 |
Filed Date | 2014-03-13 |
United States Patent
Application |
20140073064 |
Kind Code |
A1 |
Kang; Seung Hyuk ; et
al. |
March 13, 2014 |
MAGNETIC TUNNEL JUNCTION (MTJ) ON PLANARIZED ELECTRODE
Abstract
A magnetic tunnel junction (MTJ) with direct contact is
manufactured having lower resistances, improved yield, and simpler
fabrication. The lower resistances improve both read and write
processes in the MTJ. The MTJ layers are deposited on a bottom
electrode aligned with the bottom metal. An etch stop layer may be
deposited adjacent to the bottom metal to prevent overetch of an
insulator surrounding the bottom metal. The bottom electrode is
planarized before deposition of the MTJ layers to provide a
substantially flat surface. Additionally, an underlayer may be
deposited on the bottom electrode before the MTJ layers to promote
desired characteristics of the MTJ.
Inventors: |
Kang; Seung Hyuk; (San
Diego, CA) ; Li; Xia; (San Diego, CA) ; Chen;
Wei-Chuan; (Taipei, TW) ; Lee; Kangho; (San
Diego, CA) ; Zhu; Xiaochun; (San Diego, CA) ;
Hsu; Wah Nam; (San Diego, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
QUALCOMM Incorporated |
San Diego |
CA |
US |
|
|
Assignee: |
QUALCOMM Incorporated
San Diego
CA
|
Family ID: |
44276961 |
Appl. No.: |
14/086054 |
Filed: |
November 21, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12777529 |
May 11, 2010 |
|
|
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14086054 |
|
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|
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61295460 |
Jan 15, 2010 |
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Current U.S.
Class: |
438/3 |
Current CPC
Class: |
H01L 43/08 20130101;
H01L 43/12 20130101 |
Class at
Publication: |
438/3 |
International
Class: |
H01L 43/12 20060101
H01L043/12 |
Claims
1. A method for manufacturing a magnetic tunnel junction (MTJ)
device, comprising; depositing a second insulating layer on a
bottom metal and on a first insulating layer; patterning the second
insulating layer to expose the bottom metal; depositing a bottom
electrode material on the bottom metal and on the second insulating
layer after patterning the second insulating layer; planarizing,
the bottom electrode material to form a bottom electrode having a
top surface coplanar with a top surface of the second insulating
layer; depositing a material stack over the bottom electrode;
patterning the material stack on the bottom electrode, the material
stack being smaller than the bottom electrode; depositing a third
insulating layer on the bottom electrode and on the second
insulating layer, the third insulating layer contacting the bottom
electrode and the second insulating layer, the third insulating
layer surrounding and abutting the material stack; depositing a top
electrode material on the material stack and on the third
insulating layer; patterning the top electrode material to form a
top electrode, the top electrode abutting the material stack and
abutting the third insulating layer; and depositing a fourth
insulating layer on the second insulating layer, the fourth
insulating layer surrounding and contacting the third insulating
layer and contacting both the top electrode and third insulating
layer.
2. The method of claim 1, further comprising etching the third
insulating layer to form a top surface of the third insulating
layer level with a top surface of the material stack.
3. The method of claim 1, further comprising patterning the third
insulating layer to form an insulator between the top electrode and
the bottom electrode, the insulator having substantially the same
lateral dimensions as the top electrode.
4. The method of claim 1, in which the material stack comprises
magnetic tunnel junction layers.
5. The method of claim 1, in which the patterning of the material
stack substantially aligns the material stack with the bottom
metal.
6. The method of claim 1, in which depositing the bottom electrode
material on the bottom metal covers the bottom metal.
7. The method of claim 1, comprising forming the top electrode to a
width of 100 nm to 150 nm.
8. The method of claim 1, comprising selecting the bottom electrode
material from a group consisting of tungsten, copper, tantalum, and
tantalum nitride.
9. The method of claim 1, further comprising depositing an
underlayer between the bottom electrode and the material stack.
10. The method of claim 1, in which the material stack comprises a
first ferromagnetic layer, a tunnel barrier layer, and a second
ferromagnetic layer.
11. The method of claim 1, further comprising integrating the
magnetic tunnel junction into a magnetic random access memory
(MRAM).
12. The method of claim 1, further comprising integrating the
magnetic tunnel junction device into a set top box, music player,
video player, entertainment unit, navigation device, communications
device, personal digital assistant (PDA), fixed location data unit,
and/or a computer.
13. A process for manufacturing a magnetic tunnel junction (MTJ)
device, comprising: depositing a second insulating layer on a
bottom metal and on a first insulating layer; patterning the second
insulating layer to expose the bottom metal; depositing a bottom
electrode on the bottom metal to cover the bottom metal after
patterning the bottom electrode; planarizing the bottom electrode;
depositing magnetic tunnel junction layers on the bottom electrode
after planarizing the bottom electrode; patterning the magnetic
tunnel junction layers; depositing a third insulating layer on the
bottom electrode and around the magnetic tunnel junction layers
after patterning the magnetic tunnel junction layers; depositing a
top electrode on the third insulating layer and the patterned
magnetic tunnel junction layer; patterning the top electrode and
the third insulating layer; and depositing a fourth insulating
layer around the third insulating layer and the top electrode.
14. The process of claim 13, further comprising: depositing a fifth
insulating layer on the fourth insulating layer and the top
electrode; patterning an opening in he fifth insulating layer to
expose the top electrode; and depositing a top metal on the top
electrode in the opening of the fifth insulating layer, the top
metal being substantially aligned with the bottom metal.
15. The process of claim 13, in which patterning the second
insulating layer comprises patterning with a first mask, patterning
the magnetic tunnel junction layers comprises patterning with a
second mask, and patterning the top electrode comprises patterning
with a third mask.
16. The process of claim 13, in which patterning the second
insulating layer comprises etching the second insulating layer
until an etch stop layer is exposed.
17. The process of claim 13, further comprising depositing an
underlayer on the bottom electrode before depositing magnetic
tunnel junction layers.
18. The process of claim 13, further comprising integrating the
magnetic tunnel junction device into a set top box, music player,
video player, entertainment unit, navigation device, communications
device, personal digital assistant (PDA), fixed location data unit,
and/or a computer.
19. A method for manufacturing a magnetic tunnel junction (MTJ)
device, comprising: depositing a second insulating layer on a
bottom metal and on a first insulating layer; patterning the second
insulating layer to expose the bottom metal; depositing a bottom
electrode material on the bottom metal and on the second insulating
layer after patterning the second insulating layer; planarizing the
bottom electrode material to form a bottom electrode having a
surface coplanar with a surface of the second insulating layer;
depositing an underlayer on the bottom electrode; depositing a
material stack on the underlayer; patterning the material stack in
a first patterning operation to be smaller bottom electrode;
depositing a third insulating layer on the underlayer and on the
second insulating layer, the third insulating layer contacting the
underlayer and the second insulating layer, and also surrounding
and abutting the material stack; depositing a top electrode
material on the material stack and on the third insulating layer;
patterning the top electrode material in a second patterning
operation to form a top electrode, the top electrode abutting the
material stack and the third insulating layer; and depositing a
fourth insulating layer on the second insulating layer to surround
and contact the third insulating layer and both the top electrode
and the third insulating layer.
20. The method of claim 19, further comprising etching the third
insulating layer to form a top surface of the third insulating
layer level with a top surface of the material stack.
21. The method of claim 19, further comprising patterning the third
insulating layer to form an insulator between the top electrode and
the bottom electrode, the insulator having substantially the same
lateral dimensions as the top electrode.
22. The method of claim 19, in which the material stack comprises
magnetic tunnel junction layers.
23. The method of claim 19, further comprising: patterning the
underlayer in the first patterning operation so that the underlayer
has substantially the same lateral dimensions as the material
stack.
24. The method of claim 19, further comprising: patterning the
underlayer in the second patterning operation so that the
underlayer has substantially the same lateral dimensions as the top
electrode.
25. The method of claim 19, in which the underlayer is a material
hat promotes a desirable crystal structure of the material
stack.
26. The method of claim 25, in which the underlayer is
tantalum.
27. The method of claim 19, further comprising integrating the
magnetic tunnel junction device into a set top box, music player,
video player, entertainment unit, navigation device, communications
device, personal digital assistant (PDA), fixed location data unit,
and/or a computer.
28. A method for manufacturing a magnetic tunnel junction (MTJ)
device, comprising: depositing an etch stop layer on a first
insulating layer; depositing a second insulating layer on the etch
stop layer; patterning the second insulating layer to expose a
bottom metal; depositing a bottom electrode material on the bottom
metal and on the second insulating layer after patterning the
second insulating layer; planarizing the bottom electrode material
to form a bottom electrode having a surface coplanar with a surface
of the second insulating layer; depositing a material stack over
the bottom electrode; patterning the material stack to be smaller
than the bottom electrode; depositing a third insulating layer on
the second insulating layer, the third insulating layer surrounding
and abutting the material stack; depositing a top electrode
material on the material stack and on the third insulating layer;
and patterning the top electrode material in a second patterning
operation to form a top electrode, the top electrode abutting the
material stack and abutting the third insulating layer.
29. The method of claim 28, further comprising integrating the
magnetic tunnel junction device into a set top box, music player,
video player, entertainment unit, navigation device, communications
device, personal digital assistant (PDA), fixed location data unit,
and/or a computer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application
Ser. No. 12/777,529 entitled "Magnetic Tunnel Junction (MTJ) on
Planarized Electrode" to KANG et al., filed May 11, 2010, which
claims the benefit of U.S. Provisional Patent Application No.
61/295,460 entitled "Magnetic Tunnel Junction (MTJ) on Planarized
Electrode" to KANG et al., filed Jan. 15, 2010, the disclosures of
which are expressly incorporated herein by reference in their
entireties.
TECHNICAL FIELD
[0002] The present disclosure generally relates to memory devices.
More specifically, the present disclosure relates to magnetic
random access memory (MRAM).
BACKGROUND
[0003] Unlike conventional random access memory (RAM) chip
technologies, in magnetic RAM (MRAM) data is not stored as electric
charge, but is instead stored by magnetic polarization of storage
elements. The storage elements are formed from two ferromagnetic
layers separated by a tunneling layer. One of the two layers has at
least one pinned magnetic polarization (or fixed layer) set to a
particular polarity. The magnetic polarity of the other magnetic
layer (or free layer) is altered to represent either a "1" (i.e.,
anti-parallel polarity to the fixed layer) or "0" (i.e., parallel
polarity to the fixed layer). One such device having a fixed layer,
a tunneling layer, and a free layer is a magnetic tunnel junction
(MTJ). The electrical resistance of an MTJ is dependent on the
magnetic polarity of the free layer compared to the magnetic
polarity of the fixed layer. A memory device such as MRAM is built
from an array of individually addressable MTJs.
[0004] Conventionally, the MTJ contacts a bottom metal through a
bottom electrode. The bottom electrode contacts the bottom metal
through a minimal-feature opening. The MTJ is placed on the bottom
electrode in a location away from contact to the bottom metal to
reduce surface roughness in the MTJ. Thus, the bottom electrode is
extended larger in width than the size of the MJT. As a result, a
high resistance results from increased contact resistance of the
bottom electrode. Additionally, increased area overhead and bitcell
size result from the extended width of the bottom electrode.
[0005] As bit cell sizes decrease, the size of the contact to the
bottom metal decreases and reduces manufacturing reliability.
Additionally, resistances increase as bitcell sizes decrease due to
challenges in seeding and filling the bottom metal. Increased
resistance results in a loss of sensitivity in conventional
MTJs.
[0006] Thus, there is a need for a MTJ having a smaller bitcell
size and lower resistivity.
BRIEF SUMMARY
[0007] According to one aspect of the disclosure, a magnetic tunnel
junction (MTJ) includes a bottom metal. The also includes a bottom
electrode on the bottom metal. The MTJ further includes a material
stack on the bottom electrode the material stack being smaller than
the bottom electrode and aligned substantially with the bottom
metal. The MTJ also includes a top electrode on the material
stack.
[0008] According to another aspect of the disclosure, a process for
manufacturing a magnetic tunnel junction device includes depositing
a second insulating layer around a bottom metal and on a first
insulating layer. The process also includes patterning the second
insulating layer to expose the bottom metal. The process further
includes depositing a bottom electrode on the bottom metal to cover
the bottom metal after patterning the second insulating layer. The
process also includes planarizing the bottom electrode. The process
further includes depositing MTJ layers on the bottom electrode
after planarizing the bottom electrode.
[0009] According to a further aspect of the disclosure, a process
for manufacturing a magnetic tunnel junction device includes
depositing a second insulating layer around a bottom metal and on a
first insulating layer. The process also includes patterning the
second insulating layer to expose the bottom metal. The process
further includes depositing a bottom electrode on the bottom metal
to cover the bottom metal after patterning the second insulating
layer. The process also includes planarizing the bottom electrode.
The process further includes depositing MTJ layers on the bottom
electrode after planarizing the bottom electrode.
[0010] According to another aspect of the disclosure, a magnetic
tunnel junction (MTJ) includes a bottom metal. The also includes
means for coupling on the bottom metal. The MTJ further includes a
material stack on the coupling means, the material stack being
patterned to a size smaller than the coupling means and the
material stack being aligned substantially with the bottom metal.
The MTJ also includes a top electrode on the material stack.
[0011] This has outlined, rather broadly, the features and
technical advantages of the present disclosure in order that the
detailed description that follows may be better understood.
Additional features and advantages of the disclosure will be
described below. It should be appreciated by those skilled in the
art that this disclosure may be readily utilized as a basis for
modifying or designing other structures for carrying out the same
purposes of the present disclosure. It should also be realized by
those skilled in the art that such equivalent constructions do not
depart from the teachings of the disclosure as set forth in the
appended claims. The novel features, which are believed to be
characteristic of the disclosure, both as to its organization and
method of operation, together with further objects and advantages,
will be better understood from the following description when
considered in connection with the accompanying figures. It is to be
expressly understood, however, that each of the figures is provided
for the purpose of illustration and description only and is not
intended as a definition of the limits of the present
disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] For a more complete understanding of the present disclosure,
reference is now made to the following description taken in
conjunction with the accompanying drawings.
[0013] FIGS. 1A-1H are cross-sectional views illustrating
manufacturing an MTJ with direct contact according to one
embodiment.
[0014] FIG. 2 is a cross-sectional view illustrating an MTJ device
with direct contact having an underlayer according to one
embodiment.
[0015] FIG. 3 is a cross-sectional view illustrating an MTJ device
with direct contact having an etch stop layer according to one
embodiment.
[0016] FIG. 4 is a block diagram showing an exemplary wireless
communication system in which an embodiment of the disclosure may
be advantageously employed.
[0017] FIG. 5 is a block diagram illustrating a design workstation
used for circuit, layout, and logic design of a semiconductor
component according to one embodiment.
DETAILED DESCRIPTION
[0018] A magnetic tunnel junction (MTJ) device may be manufactured
having a large contact opening for a bottom electrode of the MTJ to
allow direct contact of the MTJ with a bottom metal. The large
contact opening allows smaller bit cell sizes and higher yields.
Smaller bit cell sizes reduce total die area of a magnetic random
access memory (MRAM) device including MTJ devices with direct
contact. Additionally, the MTJ device is placed on the bottom
electrode substantially aligned with the bottom metal. Placing the
MTJ device substantially aligned with the bottom metal reduces
contact resistance and enhances sensitivity of the MTJ device.
Manufacturing MTJ devices with direct contact also simplifies
integration and manufacturing processes to achieve higher
yields.
[0019] FIGS. 1A-1H are cross-sectional views illustrating
manufacturing an MTJ with direct contact according to one
embodiment. FIG. 1A illustrates a partially-complete MTJ device
after insulator deposition and patterning. An insulator 104 is
deposited on an insulator 102. The insulator 102 surrounds a bottom
metal 122, which may have an adjustable width. The insulator 104 is
patterned using a first mask to create an opening 140 that exposes
the bottom metal 122 for contact to a bottom electrode 124.
[0020] FIG. 1B illustrates a partially-complete MTJ device after
bottom electrode deposition according to one embodiment A bottom
electrode 124 is deposited on the insulator 104, the insulator 102,
and the bottom metal 122 and may be, for example, tantalum, copper,
tungsten, tantalum nitride, or a tantalum nitride/tantalum bilayer.
According to one embodiment, if tungsten or copper are selected for
the bottom electrode 124, higher conductivity and lower resistivity
are achieved. Additionally, tungsten and copper are easier to
planarize than other conducting metals. The bottom electrode 124
contacts the bottom metal 122 in the opening 140 patterned in FIG.
1A. In another embodiment, the contact sidewall and bottom
interfaces are covered by a diffusion barrier.
[0021] The large contact between the bottom electrode 124 and the
bottom metal 122 reduces contact resistance. Lower resistances
improve both read and write processes for an MTJ device 100. For
example, during a read operation sensitivity is the change in
resistance of the MTJ device 100 divided by the total resistance of
the MTJ device 100. Decreasing the total resistance of the MTJ
device 100 with a larger contact increases the relative
contribution of resistance change. Additionally, during a write
operation, voltage drop is reduced across the contact of the bottom
metal 122 to the bottom electrode 124, reducing the amount of
supply voltage used for write operations. Reduced supply voltage
during write operations increases reliability of the MTJ device 100
and reduces power consumption by the MTJ device 100.
[0022] FIG. 1C illustrates a partially-complete MTJ device after
bottom electrode planarization according to one embodiment. The
bottom electrode 124 is planarized using, for example, chemical
mechanical polishing to substantially remove the bottom electrode
124 from the insulator 104. Additionally, planarization of the
bottom electrode 124 creates a substantially flat surface on the
bottom electrode 124 for MTJ layers (not yet shown).
[0023] FIG. 1D illustrates a partially-complete MTJ device after
MTJ layer deposition. MTJ layers 126 may be, for example, a
ferromagnetic layer/tunnel barrier layer/ferromagnetic layer
multilayer stack. According to one embodiment, the MTJ layers 126
are antiferromagnet/synthetic antiferromagnetic reference
layer/tunnel barrier/free layer, for example,
PtMn/CoFe/Ru/CoFeB/MgO/CoFeB. Additionally, a capping layer (not
shown) may be placed on the MTJ layers 126. A substantially flat
surface of the bottom electrode 124 decreases surface roughness of
the MTJ layers 126 and improves magnetic and electrical properties
of the MTJ device 100. According to one embodiment, the MTJ layers
126 are deposited in a specialized MTJ tool after transfer from
back-end-of-line (BEOL) equipment.
[0024] FIG. 1E illustrates a partially-complete MTJ device after
top electrode layer deposition according to one embodiment. The MTJ
layers 126 are patterned using a second mask. The location of the
patterned MTJ layers 126 is substantially aligned with the bottom
metal 122. After patterning, an insulator 106 is deposited
surrounding the MTJ layers 126. According to one embodiment, the
insulator 106 is deposited and etched back level with the MTJ
layers 126. A top electrode 128 is deposited on the MTJ layers 126
and the insulator 106. The top electrode 128 may be, for example,
tantalum, tantalum nitride, titanium, or titanium nitride.
[0025] FIG. 1F illustrates a partially-complete MTJ device after
top electrode patterning according to one embodiment. The top
electrode 128 is patterned using a third mask. The top electrode
128 may be a different size than the bottom electrode 124 (although
same sizes are shown). A size of the top electrode 128 determines,
in part, the size of the insulator 106 remaining on sides of the
MTJ layers 126. A larger top electrode 128 results in a larger
amount of insulator 106 located immediately surrounding the MTJ
layers 126 during etching of the insulator 106. Thus, sidewalls of
the MTJ layers 126 receive more protection from the insulator 106
for a larger top electrode 128 than for a smaller top electrode
128. The top electrode 128 should be large enough so that the
corresponding insulator 106 protects the sidewalls of the MTJ layer
126. According to one embodiment, the top electrode 128 may be
100-200 nm in width.
[0026] FIG. 1G illustrates a partially-complete MTJ device after
insulator deposition according to one embodiment. An insulator 108
is deposited to surround the insulator 106 and the top electrode
128. According to one embodiment, the insulator 108 is deposited
and etched back level with the top electrode 128.
[0027] FIG. 1H illustrates a partially-complete MTJ device after
top metal formation according to one embodiment. An insulator 110
and top metal 130 are deposited on the top electrode 128 and the
insulator 108 such that the top metal 130 forms an electrical
contact with the top electrode 128. According to one embodiment,
the insulator 110 may be deposited and an opening for the top metal
130 patterned followed by deposition of the top metal 130 into the
opening. The top metal 130 may be, for example, copper or
aluminum.
[0028] An electrical path is formed between the top metal 130, the
top electrode 128, the MTJ layers 126, the bottom electrode 124,
and the bottom metal 122. The electrical path may be used for
passing sensing currents for read operations and/or writing
currents for write operations of the MTJ device 100.
[0029] FIG. 2 is a cross-sectional view illustrating an MTJ device
with direct contact having an underlayer according to one
embodiment. An underlayer 202 may be deposited on the bottom
electrode 124 to promote desirable MTJ microstructure (e.g.,
particular crystalline structure). The underlayer 202 may be, for
example, tantalum. The underlayer 202 may be patterned using the
second mask or the third mask. According to an embodiment using the
second mask, the underlayer 202 is substantially the same size as
the MTJ layers 126. According to an embodiment using the third
mask, the underlayer 202 is substantially the same size as the top
electrode 128. Additionally, the width of the bottom metal 122 is
adjustable.
[0030] FIG. 3 is a cross-sectional view illustrating an MTJ device
with direct contact having an each stop layer according to one
embodiment. An etch stop layer 302 may be deposited on the
insulator 102 to prevent etching of the insulator 102 during
patterning of the insulator 104. That is, during overetching of the
insulator 104 the insulator 102 may be etched resulting in surface
roughness and undesirable electrical characteristics of the later
patterned bottom electrode 124, the MTJ layers 126, and the top
electrode 128. The etch stop layer 302 deposited on the insulator
102 etches at a decreased rate in comparison to the insulator 104
to substantially reduce etching of the insulator 102. Additionally,
the bottom metal 122 width is adjustable.
[0031] An MTJ with direct contact as disclosed above allows smaller
bit cell size and higher yield. Additionally, a large contact
opening filled with a planarized bottom electrode reduces contact
resistance of the MTJ. Reduced contact resistance improves both
read and write processes. A manufacturing process for the MTJ with
direct contact has simple integration and high yield.
[0032] FIG. 4 is a block diagram showing an exemplary wireless
communication system 400 in which an embodiment of the disclosure
may be advantageously employed. For purposes of illustration, FIG.
4 shows three remote units 420, 430, and 450 and two base stations
440. It will be recognized that wireless communication systems may
have many more remote units and base stations. Remote units 420,
430, and 450 include IC devices 425A, 425C and 425B, that include
the disclosed MTJ device. It will be recognized that any device
containing an IC may also include the MTJ device disclosed here,
including the base stations, switching devices, and network
equipment. FIG. 4 shows forward link signals 480 from the base
station 440 to the remote units 420, 430, and 450 and reverse link
signals 490 from the remote units 420, 430, and 450 to base
stations 440.
[0033] In FIG. 4, remote unit 420 is shown as a mobile telephone,
remote unit 430 is shown as a portable computer, and remote unit
450 is shown as a fixed location remote unit in a wireless local
loop system. For example, the remote units may be mobile phones,
hand-held personal communication systems (PCS) units, portable data
units such as personal data assistants, GPS enabled devices,
navigation devices, set top boxes, music players, video players,
entertainment units, fixed location data units such as meter
reading equipment, or any other device that stores or retrieves
data or computer instructions, or any combination thereof. Although
FIG. 4 illustrates remote units according to the teachings of the
disclosure, the disclosure is not limited to these exemplary
illustrated units. Embodiments of the disclosure may be suitably
employed in any device which includes MTJ devices.
[0034] FIG. 5 is a block diagram illustrating a design workstation
used for circuit, layout, and logic design of a semiconductor
component, such as an MTJ as disclosed above. A design workstation
500 includes a hard disk 501 containing operating system software,
support files, and design software such as Cadence or OrCAD. The
design workstation 500 also includes a display to facilitate design
of a circuit 510 or a semiconductor component 512 such an MTJ. A
storage medium 504 is provided for tangibly storing the circuit
design 510 or the semiconductor component 512. The circuit design
510 or the semiconductor component 512 may be stored on the storage
medium 504 in a file format such as GDSII or GERBER. The storage
medium 504 may be a CD-ROM, DVD, hard disk, flash memory, or other
appropriate device. Furthermore, the design workstation 500
includes a drive apparatus 503 for accepting input from or writing
output to the storage medium 504.
[0035] Data recorded on the storage medium 504 may specify logic
circuit configurations, pattern data for photolithography masks, or
mask pattern data for serial write tools such as electron beam
lithography. The data may further include logic verification data
such as timing diagrams or net circuits associated with logic
simulations. Providing data on the storage medium 504 facilitates
the design of the circuit design 510 or the semiconductor component
512 by decreasing the number of processes for designing
semiconductor wafers.
[0036] For a firmware and/or software implementation, the
methodologies may be implemented with modules (e.g., procedures,
functions, and so on) that perform the functions described herein.
Any machine-readable medium tangibly embodying instructions may be
used in implementing the methodologies described herein. For
example, software codes may be stored in a memory and executed by a
processor unit. Memory may be implemented within the processor unit
or external to the processor unit. As used herein the term "memory"
refers to any type of long term, short term, volatile, nonvolatile,
or other memory and is not to be limited to any particular type of
memory or number of memories, or type of media upon which memory is
stored.
[0037] If implemented in firmware and/or software, the functions
may be stored as one or more instructions or code on a
computer-readable medium. Examples include computer-readable media
encoded with a data structure and computer-readable media encoded
with a computer program. Computer-readable media includes physical
computer storage media. A storage medium may be any available
medium that can be accessed by a computer. By way of example, and
not limitation, such computer-readable media can comprise RAM, ROM,
EEPROM, CD-ROM or other optical disk storage, magnetic disk storage
or other magnetic storage devices, or any other medium that can be
used to store desired program code in the form of instructions or
data structures and that can be accessed by a computer; disk and
disc, as used herein, includes compact disc (CD), laser disc,
optical disc, digital versatile disc (DVD), floppy disk and blu-ray
disc where disks usually reproduce data magnetically, while discs
reproduce data optically with lasers. Combinations of the above
should also be included within the scope of computer-readable
media.
[0038] In addition to storage on computer readable medium,
instructions and/or data may be provided as signals on transmission
media included in a communication apparatus. For example, a
communication apparatus may include a transceiver having signals
indicative of instructions and data. The instructions and data are
configured to cause one or more processors to implement the
functions outlined in the claims.
[0039] Although specific circuitry has been set forth, it will be
appreciated by those skilled in the art that not all of the
disclosed circuitry is required to practice the disclosure.
Moreover, certain well known circuits have not been described, to
maintain focus on the disclosure.
[0040] Although the present disclosure and its advantages have been
described in detail, it should be understood that various changes,
substitutions and alterations can be made herein without departing
from the technology of the disclosure as defined by the appended
claims. For example, relational terms, such as "above" and "below"
are used with respect to a substrate or electronic device. Of
course, if the substrate or electronic device is inverted, above
becomes below, and vice versa. Additionally, if oriented sideways,
above and below may refer to sides of a substrate or electronic
device. Moreover, the scope of the present application is not
intended to be limited to the particular embodiments of the
process, machine, manufacture, composition of matter, means,
methods and steps described in the specification. As one of
ordinary skill in the art will readily appreciate from the
disclosure, processes, machines, manufacture, compositions of
matter, means, methods, or steps, presently existing or later to be
developed that perform substantially the same function or achieve
substantially the same result as the corresponding embodiments
described herein may be utilized according to the present
disclosure. Accordingly, the appended claims are intended to
include within their scope such processes, machines, manufacture,
compositions of matter, means, methods, or steps.
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