U.S. patent application number 13/972338 was filed with the patent office on 2014-02-27 for lamination method and lamination system.
This patent application is currently assigned to KABUSHIKI KAISHA MEIKI SEISAKUSHO. The applicant listed for this patent is KABUSHIKI KAISHA MEIKI SEISAKUSHO. Invention is credited to Tomoaki HIROSE, Atsushi OKANO, Hisanaga TAJIMA, Takayuki YAMAMOTO.
Application Number | 20140053974 13/972338 |
Document ID | / |
Family ID | 50146963 |
Filed Date | 2014-02-27 |
United States Patent
Application |
20140053974 |
Kind Code |
A1 |
HIROSE; Tomoaki ; et
al. |
February 27, 2014 |
LAMINATION METHOD AND LAMINATION SYSTEM
Abstract
To provide a lamination method and a lamination system capable
of excellently laminating a film-type laminate without damage even
though the semiconductor is a brittle lamination target such as a
foil-type semiconductor or a semiconductor made of highly brittle
material. In a lamination method for laminating a film-type
laminate to a brittle lamination target by overlapping the brittle
lamination target and the film-type laminate and heating and
pressing the brittle lamination target and the film-type laminate,
with respect to the brittle lamination target mounted on a mount
member and carried into a lamination device, an eleastic film
member is expanded into a vacuum chamber of the lamination device
from the above to press and laminate the brittle lamination target
and the film-type laminate.
Inventors: |
HIROSE; Tomoaki; (Ohbu-shi,
JP) ; OKANO; Atsushi; (Nagoya-shi, JP) ;
TAJIMA; Hisanaga; (Inazawa-shi, JP) ; YAMAMOTO;
Takayuki; (Tokoname-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KABUSHIKI KAISHA MEIKI SEISAKUSHO |
Ohbu-shi |
|
JP |
|
|
Assignee: |
KABUSHIKI KAISHA MEIKI
SEISAKUSHO
Ohbu-shi
JP
|
Family ID: |
50146963 |
Appl. No.: |
13/972338 |
Filed: |
August 21, 2013 |
Current U.S.
Class: |
156/285 ;
156/538 |
Current CPC
Class: |
H01L 21/67132 20130101;
B32B 37/1009 20130101; B32B 2457/14 20130101; Y10T 156/17 20150115;
B32B 2309/105 20130101; H01L 21/02104 20130101 |
Class at
Publication: |
156/285 ;
156/538 |
International
Class: |
H01L 21/02 20060101
H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 24, 2012 |
JP |
2012-184884 |
Claims
1. A lamination method for laminating a film-type laminate on a
brittle lamination target by overlapping the brittle lamination
target and the film-type laminate and heating and pressing the
brittle lamination target and the film-type laminate, wherein, with
respect to the brittle lamination target mounted on a mount member
and carried into a lamination device, an elastic film member is
expanded into a vacuum chamber of the lamination device from the
above to press and laminate the brittle lamination target and the
film-type laminate.
2. The lamination method according to claim 1, wherein the mount
member includes a wafer ring having a rim shape and a dicing tape
adhered to the wafer ring.
3. The lamination method according to claim 2, wherein a thickness
of the wafer ring having a rim shape is larger than the sum of
thicknesses of the brittle lamination target and the film-type
laminate.
4. The lamination method according to claim 2, wherein the brittle
lamination target is carried into or out of the lamination device
while supporting the wafer ring of the mount member.
5. The lamination method according to claim 3, wherein the brittle
lamination target is carried into or out of the lamination device
while supporting the wafer ring of the mount member.
6. The lamination method according to claim 1, wherein the mount
member on which the brittle lamination target and the film-type
laminate are mounted is carried into or out of the lamination
device by using a carrier film.
7. A lamination system for laminating a film-type laminate on a
brittle lamination target by overlapping the brittle lamination
target and the film-type laminate and heating and pressing the
brittle lamination target and the film-type laminate, the
lamination system comprising: a lamination device including: an
upper plate; a lower plate capable of forming a vacuum chamber
between the upper plate and the lower plate; and an elastic film
member installed to the upper plate and expandable into the vacuum
chamber, and a mount member carried into or out of the lamination
device in a state where the brittle lamination target is mounted
thereto.
8. The lamination system according to claim 7, wherein the mount
member includes a wafer ring having a rim shape and a dicing tape
adhered to the wafer ring.
Description
TECHNICAL FIELD
[0001] The present invention relates to a lamination method and a
lamination system, and more particularly, to a lamination method
and a lamination system for laminating a film-type laminate on a
brittle lamination target which is loaded on and carried by a mount
member.
BACKGROUND ART
[0002] When a film such as an NCF film is laminated on a lamination
target such as a semiconductor wafer, a lamination device using a
roll as disclosed in Patent Literature 1 has been used. Even though
the lamination target has a small thickness, if the lamination
target has flexibility, lamination targets may be successively
supplied to be laminated. However, in general cases, a lamination
target and a film are mounted on a carrier film and carried into a
lamination device to be laminated. In this method, when the
lamination target such as a semiconductor wafer is mounted onto the
carrier film or taken off from the carrier film, it is needed to
contact the semiconductor wafer by a human hand or a carrier
robot.
[0003] However, a semiconductor wafer having a thickness of 0.3 mm
or less or a wafer using brittle material made of a compound such
as gallium nitride recently becomes available, and the wafer may be
easily damaged by contact when the semiconductor wafer is mounted
on a carrier film before lamination or the laminated semiconductor
wafer is carried out from the carrier film. In addition, in the
lamination device using a roll, a pressure becomes a linear load
during laminating and is partially applied to the semiconductor
wafer, and therefore the wafer may be easily broken, similar to the
case of mounting or carrying out. In addition, a protrusion such as
a bump is provided on the upper surface of the semiconductor wafer.
If lamination is performed using a roll, a force is applied to the
bump or the like in the lateral direction, and therefore the bump
or the like may collapse.
[0004] Therefore, as disclosed in Patent Literature 2 and Patent
Literature 3, a film-type laminate is also laminated on a
semiconductor wafer using a lamination device having a pressing
film member which is an elastic body. If this lamination device is
used, the semiconductor wafer may be substantially uniformly
pressed by the pressing film member, and therefore the
semiconductor wafer is not pressed linearly, different from the
lamination device using a roll. In addition, since the lamination
device having the pressing film member may substantially uniformly
press a semiconductor wafer from the above even though the
semiconductor wafer has a protrusion such as a bump, the protrusion
such as a pump does not easily collapse during the pressing
performed by a roll.
[0005] However, in Patent Literature 2, since the semiconductor
wafer is directly mounted on a carrier film and carried in the
lamination device having a pressing film member, when mounting the
semiconductor wafer onto the carrier film or carrying out the
semiconductor from the carrier film after lamination, it is
required to directly contact and carry the semiconductor wafer. In
addition, Patent Literature 3 does not disclose how a semiconductor
is carried into or out of the lamination device having a pressing
film member.
RELATED LITERATURES
Patent Literature
[0006] Japanese Patent Application Publication No. 2005-340335
[0007] Japanese Patent Application Publication No, 2012-104782
[0008] Japanese Patent Application Publication No, 2009-259924
DISCLOSURE
Technical Problem
[0009] As described above, in Patent Literature 1 to Patent
Literature 3, when mounting a lamination target such as a
semiconductor wafer onto a carrier film or carrying out the
lamination target from the carrier film, it is needed to directly
contact the semiconductor wafer by a human hand or a carrier robot.
However, in case of laminating a brittle lamination target recently
used such as a foil-type semiconductor or a semiconductor made of
highly brittle material, a lamination method or a lamination system
which ensures good lamination of a film-type laminate without
damaging the brittle lamination target when carrying the laminate
into a lamination device, laminating the laminate in the lamination
device and carrying out the laminate from the lamination device has
not been established.
[0010] The present invention is designed in consideration of the
above problems, and the present invention is directed to providing
a lamination method and a lamination system, which may agreeably
laminate a film-type laminate without damage even though the
film-type laminate is a brittle lamination target such as a
foil-type semiconductor or a semiconductor made of highly brittle
material.
Technical Solution
[0011] A lamination method of the claim 1 laminates a film-type
laminate on a brittle lamination target by overlapping the brittle
lamination target and the film-type laminate and heating and
pressing the brittle lamination target and the film-type laminate,
wherein, with respect to the brittle lamination target mounted on a
mount member and carried into a lamination device, an elastic film
member is expanded into a vacuum chamber of the lamination device
from the above to press and laminate the brittle lamination target
and the film-type laminate.
[0012] In the lamination method of the claim 2, according to the
claim 1, the mount member may include a wafer ring having a rim
shape and a dicing tape adhered to the wafer ring.
[0013] In the lamination method of the claim 3, according to the
claim 2, a thickness of the wafer ring having a rim shape may be
larger than the sum of thicknesses of the brittle lamination target
and the film-type laminate.
[0014] In the lamination method of the claim 4, according to the
claim 2, the brittle lamination target may be carried into or out
of the lamination device while supporting the wafer ring of the
mount member.
[0015] In the lamination method of the claim 5, according to the
claim 3, the brittle lamination target may be carried into or out
of the lamination device while supporting the wafer ring of the
mount member.
[0016] In the lamination method of the claim 6, according to the
claim 1, the mount member on which the brittle lamination target
and the film-type laminate are mounted may be carried into or out
of the lamination device by using a carrier film.
[0017] A lamination system of the claim 7 of the present invention
laminates a film-type laminate on a brittle lamination target by
overlapping the brittle lamination target and the film-type
laminate and heating and pressing the brittle lamination target and
the film-type laminate, and the lamination system includes a
lamination device having an upper plate, a lower plate capable of
forming a vacuum chamber between the upper plate and the lower
plate, and an elastic film member installed to the upper plate and
expandable into the vacuum chamber; and a mount member carried into
or out of the lamination device in a state where the brittle
lamination target is mounted thereto.
[0018] In the lamination system of the claim 8, according to the
claim 7, the mount member may include a wafer ring having a rim
shape and a dicing tape adhered to the wafer ring.
Advantageous Effects
[0019] The lamination method of the claim 1 according to the
present invention laminates a film-type laminate on a brittle
lamination target by overlapping the brittle lamination target and
the film-type laminate and heating and pressing the brittle
lamination target and the film-type laminate, wherein, with respect
to the brittle lamination target mounted on a mount member and
carried into a lamination device, an elastic film member is
expanded into a vacuum chamber of the lamination device from the
above to press and laminate the brittle lamination target and the
film-type laminate. Therefore, since the brittle lamination target
is not damaged during a carrying-in process, a carrying-out process
and a laminating process, a yield may be enhanced when the
film-type laminate is laminated on the brittle lamination
target.
[0020] The lamination system of the claim 6 according to the
present invention laminates a film-type laminate on a brittle
lamination target by overlapping the brittle lamination target and
the film-type laminate and heating and pressing the brittle
lamination target and the film-type laminate, and the lamination
system includes a lamination device having an upper plate, a lower
plate capable of forming a vacuum chamber between the upper plate
and the lower plate, and an elastic film member installed to the
upper plate and expandable into the vacuum chamber; and a mount
member carried into or out of the lamination device in a state
where the brittle lamination target is mounted thereto. Therefore,
since the brittle lamination target is not damaged during a
carrying-in process, a carrying-out process and a laminating
process, a yield may be enhanced when the film-type laminate is
laminated on the brittle lamination target.
DESCRIPTION OF DRAWINGS
[0021] FIG. 1 is a diagram showing a lamination device when a
vacuum chamber is closed and a semiconductor wafer is pressed by an
elastic film member.
[0022] FIG. 2 is a diagram showing the lamination system when the
vacuum chamber is closed and the semiconductor wafer is pressed by
the elastic film member.
[0023] FIG. 3 is a diagram showing the lamination system when the
vacuum chamber of the lamination device is opened.
[0024] FIG. 4 is a plane view showing a semiconductor wafer and a
film-type laminate, mounted on a mount member.
[0025] FIG. 5 is a cross-sectional view showing the semiconductor
wafer and the film-type laminate, mounted on the mount member.
[0026] FIG. 6 is a diagram showing a lamination device of a
lamination system according to another embodiment.
[0027] FIG. 7 is a diagram showing a laminating sequence of the
lamination system according to another embodiment in a state where
a semiconductor wafer W is mounted.
[0028] FIG. 8 is a diagram showing a laminating sequence of the
lamination system according to another embodiment in a state where
a ring spacer is mounted.
[0029] FIG. 9 is a diagram showing a laminating sequence of the
lamination system according to another embodiment in a state where
a film-type laminate is mounted.
[0030] FIG. 10 is a diagram showing a laminating sequence of the
lamination system according to another embodiment in a state where
a semiconductor wafer and a film-type laminate are pressed by an
elastic film member.
BEST MODE
[0031] A lamination system 11 according to an embodiment will be
described with reference to FIG. 1 or 3. The lamination system 11
of this embodiment laminates a film-type laminate F on a
semiconductor wafer W by overlapping the semiconductor wafer W,
which is a brittle lamination target, and the film-type laminate F
and heating and pressing the semiconductor wafer W and the
film-type laminate F. The lamination system 11 includes a
lamination device 12 for laminating the semiconductor wafer W and
the film-type laminate F, a carrying mechanism 13 for carrying the
semiconductor wafer W and the film-type laminate F, or the
like.
[0032] As shown in FIG. 1, the lamination device 12 includes an
upper plate 14 and a lower plate 15 installed to face each other.
The lower plate 15 may move upwards or downwards with respect to
the upper plate 14, and when the upper plate 14 and the lower plate
15 are closed, a vacuum chamber C is formed between the upper plate
14 and the lower plate 15. The vacuum chamber C may be made vacuous
by sucking by a vacuum pump, not shown. In addition, an elastic
film member 16 is installed at the lower side of the upper plate 14
inside the vacuum chamber C. The elastic film member 16 is made of
heat-resisting rubber such as a silicon rubber having hardness
(Shore A hardness) of 10.degree. to 65.degree. (more preferably,
15.degree. to 55.degree.) and a thickness of 1 mm to 6 mm (more
preferably, 2 mm to 5 mm), without being limited thereto. The rim
of the elastic film member 16 is hooked and fixed to a base 18 of
the upper plate 14 by a frame body 17 and bolts, not shown, and may
be expanded into the vacuum chamber C during a pressing process. In
addition, a fine unevenness is formed on the surface of the elastic
film member 16. Moreover, in case of being laminated on a
semiconductor wafer W having a bump formed at the surface thereof,
the bump is provided toward the upper side, and the hardness of the
elastic film member 16 of the upper plate 14 is preferably set
higher than the hardness of the elastic fixing film member 23 of
the lower plate 15.
[0033] In addition, a heat plate 19 which is a part of the upper
plate is attached to the base 18 of the upper plate 14. A cartridge
heater (not shown) is installed in the heat plate 19, or a rubber
heater (not shown) is installed at the surface thereof, so that the
heat plate 19 may generate heat. In addition, an
absorbed/compressed air supply hole 20 is formed toward an opposite
side of the elastic film member 16 through the base 18 of the upper
plate 14 and the heat plate 19. An opening of the
absorbed/compressed air supply hole 20 in the device is opened at
the opposite side of the elastic film member 16, and an opening
thereof out of the device is connected to a vacuum pump and a
compression pump (not shown) installed out of the upper plate 14 by
means of a valve or the like.
[0034] With respect to the lower plate 15, a heat plate 21 which is
a part of the lower plate is also installed to a base 22 thereof.
In addition, the elastic fixing film member 23 is also adhered to
the upper surface of the heat plate 21 of the lower plate 15. The
elastic fixing film member 23 is made of heat-resisting rubber such
as a silicon rubber having hardness (Shore A hardness) of
10.degree. to 60.degree. and a thickness of 1 mm to 6 mm. In
addition, a fine unevenness is formed on the surface of the elastic
fixing film member 23. An absorbing hole 24 is formed at a part of
the lower plate 15. In addition, an opening of the absorbing hole
24 inside the device is opened to the vacuum chamber C, and an
opening thereof out of the device is connected to a vacuum pump
(not shown). Moreover, a seal member such as an O-ring 26 is
installed at a wall 25 around the lower plate 15, and when the
vacuum chamber C is formed, the upper surface of the wall 25 of the
lower plate 15 and the O-ring 26 are interposed between carrier
films f1, f2, described later, or directly contact the lower
surface of the frame body 17 of the upper plate 14. In addition,
the vacuum chamber C is not limited to the above structure if it
has appropriate width and height.
[0035] Next, the carrying mechanism 13 for the semiconductor wafer
W and the film-type laminate F will be described. In the carrying
mechanism 13, a carrier film f1 unwound from an unwinding roll 31
installed at the upper side near a preprocess of the lamination
device 12 passes between the upper plate 14 and the lower plate 15
of the lamination device 12 and is wound around a winding roll 32
installed at the upper side near a post-process of the lamination
device 12. In addition, a carrier film f2 unwound from an unwinding
roll 33 installed at the lower side near the preprocess of the
lamination device 12 passes between the upper plate 14 and the
lower plate 15 of the lamination device 12 and is wound around a
winding roll 34 installed at the lower side near the post-process
of the lamination device. The carrier films f1, f2 are made of
resin films such as polyethylene terephthalate, as known in the
art.
[0036] The carrying mechanism 13 will be described in more detail.
The lower carrier film f2 is unwound from the unwinding roll 33 and
then changes its direction by a roller 35 to be sent in a
horizontal direction toward the lamination device 12. In addition,
a carrying-in stage S1 for carrying in the mount member 36 to which
the semiconductor wafer W and the film-type laminate F are mounted
is installed at a portion (a portion having an open upper side)
where only the lower carrier film f2 is sent in the horizontal
direction.
[0037] Meanwhile, the upper carrier film f1 also changes its
direction by rollers 37, 38 to be sent to the lamination device 12
so that it overlaps with the lower carrier film f2 in front of the
lamination device 12, instead of the carrying-in stage S1. In
addition, in the post-process of the lamination device 12, after
the upper carrier film f1 changes its direction toward the winding
roll 32 by the roller 39, the lower carrier film f2 is also sent in
the horizontal direction. In addition, a carrying-out stage S2 for
carrying out the mount member 36 to which the laminated
semiconductor wafer W is mounted is installed at a portion (a
portion having an open upper side) where only the lower carrier
film f2 is sent in the horizontal direction. After that, the lower
carrier film f2 changes its direction by the roller 40 and is wound
around the winding roll 34.
[0038] In addition, as another embodiment of the carrying mechanism
13, a gripping carrier device for gripping both ends of the carrier
films f1, f2 between the lamination device 12 and the winding rolls
32, 34 by a chuck device and pulling the carrier films f1, f2
toward the post-process may also be installed. Further, a plurality
of lamination devices may be installed, without being limited to a
single device, and a press device may be added after the lamination
device 12 using the elastic film member 16 which is expanded.
[0039] Moreover, as another embodiment of the carrying mechanism,
in the mount member to which the semiconductor wafer W serving as a
brittle lamination target and the film-type laminate F serving as a
film-type laminate are mounted, a portion of the wafer ring 41 may
be supported by a transfer device such as a multi-joint robot so
that the mount member may be directly carried into or out of the
lamination device 12. In this case, the mount member may be carried
by interposing the wafer ring 41 by a grip unit of a robot, or the
wafer ring 41 may be carried while being loaded on a support of the
robot. In addition, interposing by the grip unit of the robot or
loading on the support is included in the concept of supporting the
semiconductor wafer W or the like. In addition, in another
embodiment, the carrier film f2 is not used when carrying the
semiconductor wafer W.
[0040] Next, the mount member 36 of the carrying mechanism 13 will
be described with reference to FIGS. 4 and 5. The mount member 36
to which the semiconductor wafer W serving as a brittle lamination
target and the film-type laminate F are mounted includes a
rim-shaped wafer ring (rim portion) 41 and a dicing tape (adhesive
tape) f3 adhered to the wafer ring 41. The wafer ring 41 is made of
material such as heat-resisting resin or metal, and without being
limited thereto, has an inside hole H with a thickness of 1 to 5
mm. The thickness of the wafer ring 41 is larger than the sum of
thicknesses of the semiconductor wafer W and the film-type laminate
F, needless to say. In addition, the inside hole H of the wafer
ring 41 is installed to have a length larger than the diameter of
the semiconductor wafer W so that the semiconductor wafer W does
not directly contact. In addition, even though the outer
circumference of the wafer ring 41 and the inner circumference of
the inside hole H have a rectangular shape with arc-shaped corners
in this embodiment, they are not limited thereto but may have
various shapes such as polygonal shapes like a rectangle and an
octagon, a circular shape, or an oval shape. In addition, as shown
in FIG. 5, the dicing tape (the adhesive film) f3 is attached to
the lower surface 41a of the wafer ring 41 (an opposite side of the
wafer ring 41 in the case the semiconductor wafer W is mounted) to
close the inside hole H.
[0041] Therefore, in the mount member 36, the adhesive layer of the
dicing tape f3 is attached upwards, and the dicing tape f3 having
an exposed adhesive layer is installed at the portion (the central
portion) of the inside hole H of the wafer ring 41. In addition, a
circular semiconductor wafer W is attached to the adhesive layer of
the dicing tape f3, and a rectangular film-type laminate F overlaps
thereon. The film-type laminate F is generally cut to a size
capable of covering the entire surface of the semiconductor wafer W
as described above. In addition, in the film-type laminate F,
surrounding portions other than the portion contacting the upper
surface of the semiconductor wafer W are installed to face the
dicing tape f3. In this case, the film-type laminate F may be
adhered to the dicing tape f3 or simple overlap therewith. In this
configuration, the semiconductor wafer W and the film-type laminate
F are fixed on the mount member 36 without being dislocated. In
addition, the shape of the film-type laminate F is not limited to a
rectangular shape but may have a circular shape or a continuous
strip shape as described later.
[0042] Next, a lamination method using the lamination system 11
according to an embodiment will be described with reference to
FIGS. 1 to 3. The brittle lamination target employed in the
lamination method of this embodiment may be a wafer made of brittle
material such as a silicon wafer having a thickness of 0.3 mm or
less in case of a semiconductor, a compound semiconductor wafer of
gallium nitride, or a wafer made of silicon nitride, without being
limited thereto. In particular, in case of a semiconductor wafer W
having a thickness of 0.01 mm to 0.1 mm, it is required to use the
mount member 36 having the wafer ring 41 and the dicing tape f3. In
addition, regarding the diameter of the semiconductor wafer W, for
example, a semiconductor having a diameter of 100 mm to 500 mm is
laminated, and then it tends to have a larger size, without being
limited thereto. With the same thickness, the semiconductor wafer W
may be easily broken as its diameter is greater. Such a brittle
semiconductor wafer W may be more easily broken during being
handled or laminated, in comparison to conventional wafers, and
thus tends to deteriorate a yield. In other case, semiconductor
wafers W having a thickness of 0.01 mm to 0.1 mm or semiconductor
wafers W having a bump formed at the surface thereof may not be
suitably pressed by a roll laminate in many cases. Therefore, the
lamination device 12 pressing by the elastic film member 16 is
particularly preferred. In addition, the film-type laminate
laminated on the semiconductor wafer W employs a film having
insulation and adhesion such as a non conductive film (NCF).
[0043] First, as shown in FIGS. 1 and 2, while the film-type
laminate F is being laminated on the semiconductor wafer W in the
lamination device 12, a set of the mount member 36 to which the
semiconductor wafer W and the film-type laminate F as described
above is carried into the carrying-in stage S1 on the carrier film
f2. The carrying-in work at this time is performed using a handling
robot, not shown. However, since the mount member is carried in by
gripping only the portion of the wafer ring 41 by using a chuck of
the robot, there is no problem with the semiconductor wafer W
having a small thickness which is easily broken. In addition, the
mount member 36 may be carried in by a worker hand, and in this
case, the mount member may be carried in without contacting the
semiconductor wafer W. Moreover, the mount member 36 or the like
may be carried in from a belt conveyor of a preprocess to the lower
carrier film f2 of the lamination system 11. In this case, the
mount member 36 is not gripped but slid to transfer, but an impact
during the transfer is not directly applied to the semiconductor
wafer W.
[0044] In addition, the mount member 36 is carried out in the
carrying-out stage S2 simultaneously. In case of carrying out the
mount member 36, similar to the carrying-in work, the portion of
the wafer ring 41 of the mount member 36 is gripped by a handling
robot or a human hand without contacting the semiconductor wafer W.
In other case, the mount member may be transferred to/from a belt
conveyor of a post-process without being gripped.
[0045] Moreover, if the semiconductor wafer W is completely
laminated in the lamination device 12 by spending a predetermined
time, the atmospheric pressure in the vacuum chamber C returns to a
normal pressure, and then, as shown in FIG. 3, the lower plate 15
moves downwards so that the upper plate 14 and the lower plate 15
are opened. Next, in addition, the upper and lower winding rolls
32, 34 are operated to carry the carrier films f1, f2 from the
preprocess toward the post-process. By doing so, the semiconductor
wafer W and the mount member 36 which are completely laminated in a
state of being interposed between the upper carrier film f1 and the
lower carrier film f2 are moved from the inside of the lamination
device 12 to the carrying-out stage S2. In addition, the
semiconductor wafer W, the film-type laminate F and the mount
member 36 on the lower carrier film f2 of the carrying-in stage S1
are simultaneously moved into the lamination device 12. At this
time, the upper and lower carrier films 11, f2 are
tension-controlled between the unwinding roll 31 and the winding
roll 32 or between the unwinding roll 33 and the winding roll 34,
so that the carrier films 11, f2 and the mount member 36 do not
drop down between the upper and lower plates 14, 15 of the
lamination device 12.
[0046] In addition, if the upper plate 14 and the lower plate 15 of
the lamination device 12 are closed again, the vacuum chamber C is
formed, and the vacuum chamber C is made vacuous by sucking through
the absorbing hole 24 by a vacuum pump, not shown. At this time,
since the heat plate 19 of the upper plate 14 and the heat plate 21
of the lower plate 15 are heated, the layer of the film-type
laminate F toward the semiconductor wafer W or the entire film-type
laminate F is melted. In addition, the heat plate 19 of the upper
plate 14 and the heat plate 21 of the lower plate 15 are heated to,
for example, 80.degree. C. to 200.degree. C., without being limited
thereto. In this stage, preferably, the opposite side of the
elastic film member 16 is absorbed by the vacuum pump but not
pressed. In addition, if a predetermined time passes, as shown in
FIGS. 1 and 2, a compressed air is introduced from a compression
pump to the opposite side of the elastic film member 16 of the
upper plate 14 through the absorbed/compressed air supply hole 20,
so that the elastic film member 16 is expanded into the vacuum
chamber C. By doing so, the film-type laminate F is elongated
toward the upper surface of the semiconductor wafer W through the
carrier film f1 by means of the elastic film member 16. In
addition, the opposite side of the semiconductor wafer W is pressed
toward the elastic fixing film member 23 adhered to the heat plate
21 of the lower plate 15 by the dicing tape f3 and the carrier film
f2.
[0047] At this time, it is advantageous to expand the elastic film
member 16 to press the upper surface of the semiconductor wafer W
mounted on the mount member 36 due to the following reason. By
pressing at the upper surface, the dicing tape f3 adhered to the
lower surface of the wafer ring 41 of the mount member 36 is
pressed to the elastic fixing film member 23 at the lower side, and
at this time, the dicing tape f3 may not have substantially no bent
or a small bent. Meanwhile, in the case an elastic film member is
installed at the lower plate 15 and the elastic film member at the
lower plate 15 is expanded, the dicing tape f3 is lifted up and
bent greatly, and simultaneously the portion around the
semiconductor wafer W is also bent and easily broken. In addition,
the bent semiconductor wafer W may be easily broken due to the
difference of shrinkage caused by air cooling. Moreover, the dicing
tape f3 may also be easily torn. In addition, in case of pressing
the elastic film member installed at the lower plate 15, the entire
mount member 36 is lifted up by the expansion of the elastic film
member, so that the mount member may deviate from the center of the
vacuum chamber C of the lamination device 12. In this case, the
semiconductor wafer W may stick out between the carrier films f1,
f2 so that a part of the melted film-type laminate may be attached
into the vacuum chamber C of the lamination device 12, irregularly
pressed by the elastic film member, or cause a problem in handling
to a post-process in the carrying-out stage S2.
[0048] In addition to the above, it may also be conceived that the
film-type laminate such as a NCF film, the semiconductor wafer W,
and the mount member 36 including the dicing tape f3 are mounted in
order from the bottom and pressed from the below by the elastic
film member. However, in this case, when the entire elastic film
member is lifted up, the semiconductor wafer W may also be broken.
In addition, there is a limit in carrying in or out the
semiconductor wafer W, and when the semiconductor wafer W is
attached to the dicing tape f3 of the mount member 36 or detached
from the dicing tape f3 in a preprocess or a post-process, a
process of, for example, reversing the mount member 36 is
required.
[0049] When the film-type laminate such as a NCF film and the
semiconductor wafer W are pressed by the lamination device 12, the
pressure (the surface pressure applied to the semiconductor wafer
W) may be, for example, in the range of 0.2 MPa to 1.0 MPa, without
being limited thereto. In addition, the pressing time is, for
example, 15 seconds to 90 seconds, without being limited thereto.
Moreover, a predetermined time passes, the supply of compressed air
to the opposite side of the elastic film member 16 is intercepted,
and the elastic film member 16 is absorbed again toward the heat
plate 19, consequently the laminating work is completed in the
lamination device 12 by using the elastic film member 16. In
addition, the vacuum chamber C is opened to the atmosphere to
return to a normal pressure, and as shown in FIG. 3, the lower
plate 15 is moved down again to open the vacuum chamber C. By
repeating these procedures, the film-type laminates F are
repeatedly laminated on the semiconductor wafers W by a batch-type
lamination device 12. A surplus of the film-type laminate F remains
in a completely laminated semiconductor wafer W, but the surplus is
cut and removed on the carrier film f2 or in a post-process after
the laminating process.
[0050] In addition, in the above embodiment, the film-type laminate
F is adhered to the mount member 36 and carried together with the
semiconductor wafer W. However, the film-type laminate F may also
be a strip-type continuous film. If the film-type laminate F is a
continuous film, in a state where a protective film or the like is
wound from the unwinding roll of the film-type laminate F, the
strip-like film-type laminate F overlaps on the semiconductor wafer
W mounted on the mount member 36 and is supplied to the lamination
device 12, and this is pressed in the lamination device 12 and then
carried out. In a state where the semiconductor wafer W and the
strip-like film-type laminate F laminated are mounted on the lower
carrier film f2, a surplus of the film-type laminate F is cut from
the laminated semiconductor wafer W.
[0051] In addition, in this embodiment, the film-type laminate F
and the semiconductor wafer W are mounted on the mount member 36
and carried as being loaded on the carrier film f2. However, the
semiconductor wafer W may also be directly carried in or out to a
pressing position at the center of the lamination device 12 by
supporting a portion of the wafer ring 41 by a grip unit of a
multi-joint robot. In this case, during a pressing process by the
lamination device 12, it should be considered that the film-type
laminate F is melted and attached to the elastic film member 16 or
the like. For this reason, it should also be considered that a
protective film having the same size as an area contacting the
upper surface of the wafer ring 41 is mounted on the film-type
laminate F. The area of the protective film needs to be larger than
the area of the film-type laminate F so that at least the film-type
laminate F does not stick out, and preferably smaller than the area
of the wafer ring 41. In addition, since the lower surface of the
semiconductor wafer W is covered by the dicing tape f3, a
protective film is not necessary. In addition, the laminating
process is completed, the semiconductor wafer W is carried out of
the lamination device 12 as the portion of the wafer ring 41 is
gripped by a multi-joint robot. In this case, the semiconductor
wafer W may be moved toward the same side as the carrying-in side
by using a single robot, or the semiconductor wafer W may also be
moved toward a certain direction by using two robots. Moreover, if
a protective film overlaps therewith, the protective film is
removed (or, a surplus of the film-type laminate F and the
protective film may also be cut in advance).
[0052] The case where the semiconductor wafer W is carried without
using a carrier film will be described as a second embodiment. As
shown in FIG. 6, since a basic structure of the lamination device
52 of the lamination system 51 is substantially identical to that
of the lamination device 11 of the embodiment depicted in FIG. 1 or
the like, only different components are endowed with reference
symbols and described below. A concave portion 55 for mounting the
wafer ring 41 is formed at the upper surface of the heat plate 54
(the mounting plate) of the lower plate 53 of the lamination device
52. In addition, an absorbing hole 56 is formed at the bottom 55a
of the concave portion 55. Moreover, a mounting stand 57 of the
semiconductor wafer W made of porous material is disposed at the
center of the concave portion 55. The height of the mounting stand
57 is greater than the height of the bottom of the concave portion
55 and, for example, is identical to the upper surface of the outer
side of the concave portion 55. However, on occasions, the height
of the mounting stand 57 may be identical to the height of the
bottom 55a. In addition, the opposite side of the mounting stand 57
is connected to a hole 58 formed for absorbing. The absorbing hole
56 and the hole 58 are respectively connected to a vacuum pump via
a valve. In addition, the lamination system 51 includes a transfer
device, not shown, which includes a multi-joint robot for
supporting and carrying the wafer ring 41 or a ring spacer 59,
described later.
[0053] Next, a laminating method for laminating the semiconductor
wafer W and the film-type laminate F by the lamination system 51
will be described with reference to FIGS. 6 to 10. First, as shown
in FIGS. 6 and 7, since the wafer ring 41 is absorbed and supported
by the transfer device, the semiconductor wafer W loaded on the
mount member 36 is mounted in the concave portion 55 of the heat
plate 54 of the lower plate 53 of the opened lamination device 52.
With regard to the mount member 36, similar to the embodiment of
FIG. 1 or the like, the dicing tape f3 is attached upwards to the
wafer ring 41, and at an initial state, only the semiconductor
wafer W is mounted on the dicing tape f3, and the film-type
laminate F does not overlap therewith. In addition, if the
semiconductor W loaded on the mount member 36 is mounted on the
concave portion 55 of the heat plate 54, a portion of the dicing
tape f3 at the opposite side of the semiconductor W is absorbed
through the mounting stand 57 made of porous material from the
absorbing hole 58. In addition, a portion of the wafer ring 41 is
absorbed from the absorbing hole 56 through the dicing tape f3 and
supported.
[0054] Next, as shown in FIG. 8, the ring spacer 59 is mounted on a
portion between the semiconductor wafer W and the wafer ring 41 by
the transfer device. The hole in the inner circumference of the
ring spacer 59 may have a circular shape, and the outer side
thereof may have a shape similar to the hole in the inner
circumference of the wafer ring. The ring spacer 59 is mounted for
the following purposes. When the elastic film member 16 is pressed
down during the pressing process, it is possible to prevent the
dicing tape 13 having an adhesive layer toward the above from being
adhered to the elastic film member 16.
[0055] In addition, when the film-type laminate F is mounted, it is
possible to prevent the film-type laminate F from contacting the
dicing tape f3 and creating an inner space. The ring spacer 59 may
also overlap with the mount member 36 together with the
semiconductor wafer W from the first. In addition, it is not
essential to install the ring spacer 59 depending on sizes of the
semiconductor wafer W and the wafer ring 41.
[0056] Next, as shown in FIG. 9, the film-type laminate F (the NCF
film) absorbed to another absorbing transfer unit of the transfer
device is mounted on the semiconductor wafer W to cover the entire
surface.
[0057] At this time, the region between the semiconductor wafer W
and the ring spacer 59 is covered by the film-type laminate F, so
that the dicing tape f3 does not expose. Next, the upper plate 60
and the lower plate 53 of the lamination device 52 are adhered to
form a chamber therein, and the chamber is made vacuous by
sucking.
[0058] After that, as shown in FIG. 10, a compressed air is
supplied to the opposite side of the elastic film member 16
installed at the upper plate 60 of the lamination device 52, and by
the expanded elastic film member 16, the semiconductor wafer W is
pressed through the film-type laminate F, thereby adhering and
laminating them.
[0059] At this time, a tension is applied to the dicing tape f3 by
the ring spacer 59, and the adhesion between the elastic film
member 16 and the dicing tape f3 is prevented. If the laminating
work is completed, the upper plate 60 and the lower plate 53 are
opened, and only the ring spacer 59 is absorbed and removed by the
transfer device. In addition, simultaneously or before or after
this, a compressed air is supplied through the hole 58 and the
mounting stand 57 made of porous material, so that the opposite
side of the semiconductor wafer W is released. In addition, a
compressed air is also supplied from the hole 56, and the upper
surface of the wafer ring 41 is absorbed and taken off.
[0060] Moreover, in another embodiment, if the area between the
semiconductor wafer W and the film-type laminate F may be made
vacuous by sucking, from the beginning, a mount member 36 on which
the semiconductor wafer W and the ring spacer 59 or the film-type
laminate F are mounted may be carried in. In addition, in the
lamination device 52 of this embodiment, the concave portion 55 may
not be formed at the heat plate 54, but a positioning protrusion
may be formed around the heat plate 54 to determine a position of
the mount member 36. Moreover, as long as the lamination device 52
is capable of absorbing and supporting at least the mount member 36
to the lower plate 53, an elastic film member such as a silicon or
rubber may be adhered to the upper surface of the heat plate 54 of
the lower plate 53, and a portion of the semiconductor wafer W may
be mounted thereon. In this case, portions other than the portion
to which the semiconductor wafer W is mounted may be absorbed
through a hole formed in the elastic film member or other
members.
INDUSTRIAL AVAILABILITY
[0061] Though not described one by one in regard to the present
invention, the present invention is not limited to the above
embodiments but may be applied to modifications made by a person
skilled in the art based on the spirit of the present invention,
needless to say. The brittle lamination target employed in the
lamination method and the lamination system of the present
invention includes a wiring substrate having a plate thickness of
0.3 mm or less, a solar cell of 0.3 mm or less, a substrate (a
green sheet) having a optical waveguide and ceramic before
sintering regardless of a thickness, or the like, in addition to
all semiconductor wafers having a plate thickness of 0.3 mm or less
and nitride semiconductor wafers. In addition, regarding the plate
thickness of the semiconductor wafer W, since a semiconductor wafer
having a thickness of 0.01 mm to 0.05 mm may be easily broken while
being handled, the present invention is very effective.
REFERENCE SYMBOLS
[0062] 11: lamination system [0063] 12: lamination device [0064]
13: carrying mechanism [0065] 14: upper plate [0066] 15: lower
plate [0067] 16: elastic film member [0068] 36: mount member [0069]
41: wafer ring (rim portion) [0070] C: vacuum chamber [0071] F:
film-type laminate [0072] H: inside hole [0073] W: semiconductor
wafer [0074] f1, f2: carrier film [0075] f3: dicing tape (adhesive
tape)
* * * * *