U.S. patent application number 14/001842 was filed with the patent office on 2013-12-19 for method for selectively metallizing surface of ceramic substrate, ceramic product and use of ceramic product.
This patent application is currently assigned to BYD COMPANY LIMITED. The applicant listed for this patent is Qing Gong, Xinping Lin, Yongpeng Ren, Baoxiang Zhang. Invention is credited to Qing Gong, Xinping Lin, Yongpeng Ren, Baoxiang Zhang.
Application Number | 20130337241 14/001842 |
Document ID | / |
Family ID | 47176308 |
Filed Date | 2013-12-19 |
United States Patent
Application |
20130337241 |
Kind Code |
A1 |
Gong; Qing ; et al. |
December 19, 2013 |
METHOD FOR SELECTIVELY METALLIZING SURFACE OF CERAMIC SUBSTRATE,
CERAMIC PRODUCT AND USE OF CERAMIC PRODUCT
Abstract
A method for metallizing a surface of a ceramic substrate
includes molding and sintering a ceramic composition to obtain the
ceramic substrate, in which the ceramic composition comprises a
ceramic powder and a functional powder dispersed in the ceramic
powder, radiating a predetermined region of the surface of the
ceramic substrate, and performing chemical plating on the ceramic
substrate.
Inventors: |
Gong; Qing; (Shenzhen,
CN) ; Lin; Xinping; (Shenzhen, CN) ; Ren;
Yongpeng; (Shenzhen, CN) ; Zhang; Baoxiang;
(Shenzhen, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Gong; Qing
Lin; Xinping
Ren; Yongpeng
Zhang; Baoxiang |
Shenzhen
Shenzhen
Shenzhen
Shenzhen |
|
CN
CN
CN
CN |
|
|
Assignee: |
BYD COMPANY LIMITED
Shenzhen, Guangdong
CN
SHENZHEN BYD AUTO R&D COMPANY LIMITED
Shenzhen, Guangdong
CN
|
Family ID: |
47176308 |
Appl. No.: |
14/001842 |
Filed: |
May 11, 2012 |
PCT Filed: |
May 11, 2012 |
PCT NO: |
PCT/CN2012/075368 |
371 Date: |
August 27, 2013 |
Current U.S.
Class: |
428/209 ;
264/434 |
Current CPC
Class: |
C04B 41/009 20130101;
C04B 41/009 20130101; C04B 41/009 20130101; C04B 41/5127 20130101;
C04B 41/009 20130101; C04B 41/5127 20130101; C04B 41/009 20130101;
H05K 1/0306 20130101; C04B 41/009 20130101; C23C 18/06 20130101;
C04B 41/009 20130101; H05K 2203/107 20130101; C04B 41/009 20130101;
C04B 41/5127 20130101; C04B 2111/00844 20130101; C23C 18/1612
20130101; C04B 41/009 20130101; C04B 41/009 20130101; C04B 41/009
20130101; C04B 35/597 20130101; C04B 35/505 20130101; C04B 35/19
20130101; C04B 35/565 20130101; C04B 35/48 20130101; C04B 35/20
20130101; C04B 41/4572 20130101; C04B 35/185 20130101; C04B 41/4541
20130101; C04B 41/0036 20130101; C04B 41/4541 20130101; C04B
41/0045 20130101; C04B 35/584 20130101; C23C 18/1639 20130101; C04B
35/04 20130101; C04B 35/18 20130101; C04B 35/563 20130101; C04B
35/443 20130101; C04B 41/4572 20130101; C04B 35/44 20130101; C04B
35/195 20130101; C04B 35/00 20130101; C04B 35/583 20130101; C04B
35/10 20130101; C23C 18/1608 20130101; C04B 41/009 20130101; H05K
3/182 20130101; C04B 41/009 20130101; C04B 41/009 20130101; C04B
41/009 20130101; C04B 41/009 20130101; C04B 41/88 20130101; H05K
3/181 20130101; H05K 3/185 20130101; C04B 41/009 20130101; C04B
41/009 20130101; Y10T 428/24917 20150115; C23C 18/1245
20130101 |
Class at
Publication: |
428/209 ;
264/434 |
International
Class: |
H05K 1/03 20060101
H05K001/03; H05K 3/18 20060101 H05K003/18 |
Foreign Application Data
Date |
Code |
Application Number |
May 13, 2011 |
CN |
201110123029.5 |
May 13, 2011 |
CN |
201110123060.9 |
Claims
1. A method for selectively metallizing a surface of a ceramic
substrate, comprising steps of: A) molding and sintering a ceramic
composition to obtain the ceramic substrate, wherein the ceramic
composition comprises a ceramic powder and a functional powder
dispersed in the ceramic powder; the ceramic powder is at least one
selected from a group consisting of an oxide of E, a nitride of E,
a oxynitride of E, and a carbide of E; E is at least one selected
from a group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba,
B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, and lanthanide elements;
the functional powder is at least one selected from a group
consisting of an oxide of M, a nitride of M, a oxynitride of M, a
carbide of M, and a simple substance of M; and M is at least one
selected from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu,
Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In,
Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,
and Lu; B) radiating a predetermined region of the surface of the
ceramic substrate to form a chemical plating active region on the
predetermined region of the surface of the ceramic substrate; and
C) performing chemical plating on the ceramic substrate formed with
the chemical plating active region to form a metal layer on the
predetermined region of the surface of the ceramic substrate.
2. The method according to claim 1, wherein M is at least one
selected from a group consisting of Fe, Co, Ni, Mn, Ti, Cu, Ta, W,
Ce, Pr, Nd, Pm, Sm, Eu, and Gd.
3. The method according to claim 1, wherein the functional powder
is at least one selected from a group consisting of
Fe.sub.2O.sub.3, CoO, NiO, MnO.sub.2, TiO.sub.2, CuO, TiC, TaON,
TiC, W, CeO.sub.2, Pr, Nd.sub.2O.sub.3, Pm, Sm.sub.2O.sub.3,
Eu.sub.2O.sub.3, Gd.sub.2O.sub.3, and CeN.
4. The method according to claim 1, wherein E is at least one
selected from a group consisting of Al, Zr, Si, Mg, and B.
5. The method according to claim 1, wherein the ceramic powder is
at least one selected from a group consisting of Al.sub.2O.sub.3,
MgO, SiO.sub.2, ZrO.sub.2, BN, Si.sub.3N.sub.4, and SiC.
6. The method according to claim 1, wherein based on the total
weight of the ceramic composition, the amount of the ceramic powder
is 70 wt % to 99.998 wt %, and the amount of the functional powder
is 0.002 wt % to 30 wt %.
7. The method according to claim 6, wherein based on the total
weight of the ceramic composition, the amount of the ceramic powder
is 90 wt % to 99.998 wt %, and the amount of the functional powder
is 0.002 wt % to 10 wt %.
8. The method according to claim 7, wherein based on the total
weight of the ceramic composition, the amount of the ceramic powder
is 98 wt % to 99.995 wt %, and the amount of the functional powder
is 0.005 wt % to 2 wt %.
9. The method according to claim 1, wherein when the functional
powder is a simple substance of M, and the ceramic composition is
sintered under an atmosphere of air or oxygen.
10. The method according to claim 1, wherein the radiating uses an
energy beam, which is at least one selected from a group consisting
of a laser beam, an electron beam, and an ion beam.
11. The method according to claim 10, wherein the laser radiation
conditions comprise a wavelength of 200 nm to 3000 nm, a power of 5
W to 3000 W, a frequency of 0.1 KHz to 200 KHz, a linear velocity
of 0.01 mm/s to 50000 mm/s, and a fill spacing of 0.01 mm to 5
mm.
12. The method according to claim 10, wherein the energy of the ion
beam is 10.sup.1 eV to 10.sup.6 eV.
13. The method according to claim 10, wherein the power density of
the electron beam is 10.sup.1W/cm.sup.2 to 10.sup.11W/cm.sup.2.
14. The method according to claim 1, wherein M is different from
E.
15. A ceramic product, comprising: a ceramic substrate; and a metal
layer formed on a predetermined region of a surface of the ceramic
substrate, wherein the ceramic substrate comprises a ceramic body
and a functional aid dispersed in the ceramic body; the ceramic
body is at least one selected from a group consisting of an oxide
of E, a nitride of E, a oxynitride of E, and a carbide of E; E is
at least one selected from a group consisting of Li, Na, K, Rb, Cs,
Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, and
lanthanide elements; the functional aid is at least one selected
from a group consisting of a composite oxide of M and E, a
composite nitride of M and E, a composite oxynitride of M and E,
and a composite carbide of M and E; and M is at least one selected
from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb,
Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb,
Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and
Lu.
16. The ceramic product according to claim 15, wherein M is
different from E.
17. The ceramic product according to claim 15, wherein based on the
total weight of the functional aid, the amount of M is 0.01 wt % to
99.99 wt %, and the amount of E is 0.01 wt % to 99.99 wt %.
18. The ceramic product according to claim 17, wherein the
thickness of the predetermined region of the surface of the ceramic
substrate is 0.01-500 microns smaller than that of other regions of
the surface of the ceramic substrate.
19. The ceramic product according to claim 17, wherein the metal
layer has a one-dimensional, two-dimensional, or three-dimensional
structure.
20. (canceled)
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to and benefits of the
following applications: [0002] 1) Chinese Patent Application Serial
No. 201110123029.5, filed with the State Intellectual Property
Office of P. R. China on May 13, 2011; and [0003] 2) Chinese Patent
Application Serial No. 201110123060.9, filed with the State
Intellectual Property Office of P. R. China on May 13, 2011.
[0004] The entire contents of the above applications are
incorporated herein by reference.
FIELD
[0005] The present disclosure belongs to the field of ceramics, and
more particularly relates to a method for selectively metallizing a
surface of a ceramic substrate, a ceramic product and use of the
ceramic product.
BACKGROUND
[0006] Forming a three-dimensional circuit on a surface of a
ceramic device may form a three-dimensional circuit support having
mechanical and electrical functions. Meanwhile, a ceramic device
having a three-dimensional circuit on a surface thereof has high
coefficient of thermal conductivity, high mechanical strength, long
service life, strong ageing resistance, etc., and consequently will
be widely used in electronic fields. Currently, a process of
forming a three-dimensional circuit on a surface of a ceramic
device is surface oil removing-mechanical roughening-chemical
roughening-sensitizing and activating-chemical plating, which is
tedious. Moreover, the adhesive force between a ceramic substrate
and the obtained metal plating layer, i.e., a circuit, is low.
Furthermore, metallizing a surface of a ceramic substrate is high
in cost.
SUMMARY
[0007] Embodiments of the present disclosure seek to solve at least
one of the problems existing in the prior art to at least some
extent, particularly, problems of low adhesive force between a
ceramic substrate and a metal plating layer on a surface of the
ceramic substrate and high cost of metallizing the surface of the
ceramic substrate, or to provide a consumer with a useful
commercial choice.
[0008] According to embodiments of a first broad aspect of the
present disclosure, there is provided a method for selectively
metallizing a surface of a ceramic substrate. The method comprises
steps of:
[0009] A) molding and sintering a ceramic composition to obtain the
ceramic substrate, in which the ceramic composition comprises a
ceramic powder and a functional powder dispersed in the ceramic
powder; the ceramic powder is at least one selected from a group
consisting of an oxide of E, a nitride of E, a oxynitride of E, and
a carbide of E; E is at least one selected from a group consisting
of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As,
Sc, Y, Zr, Hf, and lanthanide elements; the functional powder is at
least one selected from a group consisting of an oxide of M, a
nitride of M, a oxynitride of M, a carbide of M, and a simple
substance of M; and M is at least one selected from a group
consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru,
Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce,
Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu;
[0010] B) radiating a predetermined region of the surface of the
ceramic substrate using an energy beam to form a chemical plating
active center on the predetermined region of the surface of the
ceramic substrate; and
[0011] C) performing chemical plating on the ceramic substrate
formed with the chemical plating active center to form a metal
layer on the predetermined region of the surface of the ceramic
substrate.
[0012] According to embodiments of a second broad aspect of the
present disclosure, there is provided a ceramic product. The
ceramic product comprises: a ceramic substrate; and a metal layer
formed on a predetermined region of a surface of the ceramic
substrate, in which the ceramic substrate comprises a ceramic body
and a functional aid dispersed in the ceramic body; the ceramic
body is at least one selected from a group consisting of an oxide
of E, a nitride of E, a oxynitride of E, and a carbide of E; E is
at least one selected from a group consisting of Li, Na, K, Rb, Cs,
Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, and
lanthanide elements; the functional aid is at least one selected
from a group consisting of a composite oxide of M and E, a
composite nitride of M and E, a composite oxynitride of M and E,
and a composite carbide of M and E; and M is at least one selected
from a group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb,
Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb,
Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and
Lu.
[0013] According to embodiments of a third broad aspect of the
present disclosure, there is provided use of the ceramic product
according to the second broad aspect of the present disclosure in
manufacturing a power module, a mechanical structure part, a
welding substrate or a decorating member.
[0014] With the method for selectively metallizing the surface of
the ceramic substrate according to an embodiment of the present
disclosure, by first molding and sintering a ceramic composition
comprising a ceramic powder and a functional powder dispersed in
the ceramic powder to obtain the ceramic substrate, because the
functional powder is uniformly dispersed in the ceramic powder, the
uniformly dispersed functional powder reacts with a part of
adjacent ceramic powders during the sintering process to form a
composite structure, i.e., a functional aid which is at least one
selected from a group consisting of a composite oxide of M and E, a
composite nitride of M and E, a composite oxynitride of M and E,
and a composite carbide of M and E; and other ceramic powders are
converted into a ceramic body after the completion of the
sintering. After radiating using an energy beam, the ceramic body
on the radiated region of the surface of the ceramic substrate is
etched. Therefore, the ceramic body on the radiated region of the
surface of the ceramic substrate sags, and a chemical plating
active center is formed by the corresponding exposed functional
aid. Then, chemical plating is performed to form a chemical plating
layer on the surface of the chemical plating active center. Because
the functional aid is dispersed in the ceramic body, the formed
chemical plating active center is embedded in the ceramic
substrate, and the adhesive force between the chemical plating
active center and the ceramic substrate is very high, so that the
adhesive force between the chemical plating layer formed
subsequently and the ceramic substrate is high. In addition,
because the ceramic body on the radiated region of the surface of
the ceramic substrate is etched and sags, the surface roughness is
increased, so that the adhesive force between the chemical plating
layer and the ceramic substrate is high. Moreover, by selecting
types of the functional powder and the ceramic powder, it has been
found that when the functional powder is at least one selected from
a group consisting of an oxide of M, a nitride of M, a oxynitride
of M, a carbide of M, and a simple substance of M; when M is at
least one selected from a group consisting of Ti, V, Cr, Mn, Fe,
Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir,
Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,
Er, Tm, Yb, and Lu; when the ceramic powder is at least one
selected from a group consisting of an oxide of E, a nitride of E,
a oxynitride of E, and a carbide of E; and when E is at least one
selected from a group consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca,
Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, and lanthanide
elements; by matching between the functional powder and the ceramic
powder, the compatibility between the ceramic body and the
functional aid in the formed ceramic substrate is good, and an
eutectic liquid phase is formed during the sintering process, thus
reducing the sintering temperature of the ceramic substrate,
increasing the sintering density of the ceramic substrate, and
ensuring that the ceramic substrate has high mechanical
performance; and during the subsequent radiating process, when the
functional aid is converted into the chemical plating active
center, the required energy does not need to be too high, that is,
the requirement for the energy of the energy beam is low, thus
effectively reducing the cost.
[0015] Additional aspects and advantages of embodiments of present
disclosure will be given in part in the following descriptions,
become apparent in part from the following descriptions, or be
learned from the practice of the embodiments of the present
disclosure.
DETAILED DESCRIPTION
[0016] Reference will be made in detail to embodiments of the
present disclosure. The embodiments described herein with reference
to drawings are explanatory, illustrative, and used to generally
understand the present disclosure. The embodiments shall not be
construed to limit the present disclosure.
[0017] According to an embodiment of the present disclosure, a
method for selectively metallizing a surface of a ceramic substrate
is provided. The method comprises steps of:
[0018] A) molding and sintering a ceramic composition to obtain the
ceramic substrate, in which the ceramic composition comprises a
ceramic powder and a functional powder dispersed in the ceramic
powder; the ceramic powder is at least one selected from a group
consisting of an oxide of E, a nitride of E, a oxynitride of E, and
a carbide of E; E is at least one selected from a group consisting
of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As,
Sc, Y, Zr, Hf, and lanthanide elements; the functional powder is at
least one selected from a group consisting of an oxide of M, a
nitride of M, a oxynitride of M, a carbide of M, and a simple
substance of M; M is at least one selected from a group consisting
of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag,
Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu;
[0019] B) radiating a predetermined region of the surface of the
ceramic substrate using an energy beam to form a chemical plating
active center on the predetermined region of the surface of the
ceramic substrate; and
[0020] C) performing chemical plating on the ceramic substrate
formed with the chemical plating active center to form a metal
layer on the predetermined region of the surface of the ceramic
substrate.
[0021] According to an embodiment of the present disclosure, the
constituents of the ceramic composition to be sintered and molded
to form the ceramic substrate are selected. Particularly, the
ceramic composition comprises a ceramic powder and a functional
powder dispersed in the ceramic powder; the functional powder is at
least one selected from a group consisting of an oxide of M, a
nitride of M, a oxynitride of M, a carbide of M, and a simple
substance of M; M is at least one selected from a group consisting
of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag,
Cd, Ta, W, Re, Os, Ir, Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; the ceramic powder is
at least one selected from a group consisting of an oxide of E, a
nitride of E, a oxynitride of E, and a carbide of E; and E is at
least one selected from a group consisting of Li, Na, K, Rb, Cs,
Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si, Ge, P, As, Sc, Y, Zr, Hf, and
lanthanide elements. Therefore, on one hand, the obtained ceramic
substrate has high surface roughness, thus enhancing the adhesive
force between the chemical plating layer formed subsequently and
the ceramic substrate; on the other hand, because the functional
aid formed by reacting the functional powder with a part of
adjacent ceramic powders is dispersed in the ceramic body, the
ceramic body on the radiated region of the surface of the ceramic
substrate sags, a chemical plating active center is formed by the
corresponding exposed functional aid under the action of the energy
beam, and the adhesive force between the chemical plating active
center and the ceramic substrate is high, thus further ensuring
high adhesive force between the chemical plating layer formed
subsequently and the ceramic substrate. Meanwhile, by matching
between the functional powder and the ceramic powder, the
compatibility between the ceramic body and the functional aid in
the formed ceramic substrate is good, and an eutectic liquid phase
is formed during the sintering process, thus reducing the sintering
temperature of the ceramic substrate, increasing the sintering
density of the ceramic substrate, and ensuring that the ceramic
substrate has high mechanical performance; and during the
subsequent radiating process, when the functional aid is converted
into the chemical plating active center, the required energy does
not need to be too high, thus effectively reducing the cost.
[0022] Advantageously, it has been found by the inventors that when
M is at least one selected from a group consisting of Fe, Co, Ni,
Mn, Ti, Cu, Ta, W, Ce, Pr, Nd, Pm, Sm, Eu, and Gd, the activity of
the functional powder is stronger, and during the subsequent
radiating process, when the functional aid is converted into the
chemical plating active center, the requirement for the required
energy is lower. More advantageously, when the functional powder is
at least one selected from a group consisting of Fe.sub.2O.sub.3,
CoO, NiO, MnO.sub.2, TiO.sub.2, CuO, TiC, TaON, TiC, W, CeO.sub.2,
Pr, Nd.sub.2O.sub.3, Pm, Sm.sub.2O.sub.3, Eu.sub.2O.sub.3,
Gd.sub.2O.sub.3, and CeN, the activity of the functional powder is
much stronger, and during the subsequent radiating process, when
the functional aid is converted into the chemical plating active
center, the requirement for the required energy is much lower. When
E in the ceramic powder is at least one selected from a group
consisting of Al, Zr, Si, Mg, and B, matching between the ceramic
powder and the functional powder is better, so that the
compatibility between the ceramic powder and the functional powder
in the ceramic composition during the subsequent sintering process
is better. Therefore, the ceramic powder and the functional powder
may be easily dispersed uniformly during the molding and sintering
processes, so that the obtained ceramic substrate may have good
consistency in every direction. Meanwhile, during the molding and
sintering processes, the required sintering temperature of the
ceramic powder is lower, the sintering density of the ceramic
powder is higher, and the formed ceramic body has higher mechanical
performance. Most advantageously, the ceramic powder is at least
one selected from a group consisting of Al.sub.2O.sub.3, MgO,
SiO.sub.2, ZrO.sub.2, BN, Si.sub.3N.sub.4, and SiC.
[0023] For example, the ceramic powder may be any one of
Al.sub.2O.sub.3, MgO, SiO.sub.2, ZrO.sub.2, and BN, or may be any
material formed by sintering Al.sub.2O.sub.3, MgO, SiO.sub.2,
ZrO.sub.2, and BN together, for example,
Na.sub.2O.11Al.sub.2O.sub.3, CaO(Al.sub.2O.sub.3).sub.6,
LaAlO.sub.3, MgAl.sub.2O.sub.4, silicon aluminum oxynitride
ceramics (Sialon), 3Al.sub.2O.sub.3.2SiO.sub.2, spodumene
(LiAl[Si.sub.2O.sub.6]), a SiO.sub.2-based glass powder or a
B.sub.2O.sub.3-based glass powder.
[0024] According to an embodiment of the present disclosure, the
functional powder is used to be converted into the functional aid
after reacting with a part of adjacent ceramic powders during the
sintering process, and then the chemical plating active center is
formed by the functional aid during the subsequent radiating
process for promoting the performing of the chemical plating.
However, the amount of the functional powder should not be too
large, otherwise the mechanical performance of the ceramic
substrate will be reduced. Therefore, in some embodiments, based on
the total weight of the ceramic composition, the amount of the
ceramic powder is 70 wt % to 99.998 wt %, and the amount of the
functional powder is 0.002 wt % to 30 wt %. Advantageously, based
on the total weight of the ceramic composition, the amount of the
ceramic powder is 90 wt % to 99.998 wt %, and the amount of the
functional powder is 0.002 wt % to 10 wt %. More advantageously,
based on the total weight of the ceramic composition, the amount of
the ceramic powder is 98 wt % to 99.995 wt %, and the amount of the
functional powder is 0.005 wt % to 2 wt %.
[0025] With the method for selectively metallizing the surface of
the ceramic substrate according to an embodiment of the present
disclosure, by first molding and sintering the ceramic composition
to obtain the ceramic substrate, all the functional powders react
with a part of adjacent ceramic powders to form a composite
structure, i.e., the functional aid; and other ceramic powders are
converted into the ceramic body after the completion of the
sintering. For example, after sintered, an Al.sub.2O.sub.3 ceramic
powder and a PbO functional powder may form a functional aid, i.e.,
a composite structure, for example, PbO.6Al.sub.2O.sub.3,
PbO.Al.sub.2O.sub.3, or 2PbO.Al.sub.2O.sub.3, and the functional
aid is uniformly dispersed in the Al.sub.2O.sub.3 ceramic body. The
molding and sintering techniques are well-known to those skilled in
the art, that is, molding and sintering techniques disclosed in the
prior art may be used. For example, the molding technique may
comprise steps of first granulating the ceramic composition using
polyvinyl alcohol (PVA), pressing the granulated ceramic
composition using a manual molding press under a pressure of 10 MPa
to form a billet with a diameter of 15 mm, and then placing the
billet in a box type furnace and binder removing and sintering the
billet to obtain the ceramic substrate. During the binder removing
and sintering processes, the temperature rising may be controlled
by a program, the heating rate is 5.degree. C./min, the binder
removing temperature is 400.degree. C. to 800.degree. C., and the
sintering temperature is 1000.degree. C. to 2300.degree. C. The
sintering temperature may be selected according to constituents of
the ceramic composition. For example, when the ceramic powder in
the ceramic composition is aluminum oxide (Al.sub.2O.sub.3), the
sintering temperature may be 1600.degree. C.; when the ceramic
powder is zirconium oxide (ZrO.sub.2), the sintering temperature
may be 1500.degree. C.; and when the ceramic powder is at least one
selected from a group consisting of a nitride of E, a oxynitride of
E, and a carbide of E, the sintering temperature may be
1800.degree. C. to 2300.degree. C. Advantageously, in order to
promote the densely sintering of the ceramic powder, an extra
mechanical pressure of alternatively 20 MPa to 200 MPa may also be
applied during the sintering process.
[0026] In some embodiments, in the ceramic composition, the
functional powder is at least one selected from a group consisting
of an oxide of M, a nitride of M, a oxynitride of M, a carbide of
M, and a simple substance of M; and the ceramic powder is at least
one selected from a group consisting of an oxide of E, a nitride of
E, a oxynitride of E, and a carbide of E. In one embodiment, M is
different from E. The ceramic composition may be directly sintered
under an atmosphere of air, or may be sintered under an atmosphere
of oxygen, nitrogen or argon or under vacuum. The sintering
atmosphere may be selected according to the type of the ceramic
powder in the ceramic composition. For example, when the ceramic
powder is an oxide of E, the sintering atmosphere may be air,
oxygen, nitrogen or argon, or the ceramic composition may be
sintered under vacuum; when the ceramic powder is a nitride of E or
a oxynitride of E, the sintering atmosphere may be nitrogen or
argon, or the ceramic composition may be sintered under vacuum; and
when the ceramic powder is a carbide of E, the sintering atmosphere
may be argon, or the ceramic composition may be sintered under
vacuum.
[0027] Meanwhile, the sintering atmosphere may be selected
according to the type of the functional powder in the ceramic
composition. For example, when the functional powder is an oxide of
M, a nitride of M, a oxynitride of M, or a carbide of M, the
sintering atmosphere may be air, oxygen, nitrogen or argon, or the
ceramic composition may be sintered under vacuum; and when the
functional powder is a simple substance of M, the sintering
atmosphere may be air or oxygen, but the ceramic composition may
not be sintered under an atmosphere of argon or under vacuum.
[0028] With the method for selectively metallizing the surface of
the ceramic substrate according to an embodiment of the present
disclosure, after molding and sintering the ceramic composition to
obtain the ceramic substrate, a predetermined region of the surface
of the ceramic substrate is radiated using an energy beam to form a
chemical plating active center on the predetermined region of the
surface of the ceramic substrate, and then chemical plating is
performed on the ceramic substrate formed with the chemical plating
active center to form a metal plating layer on the predetermined
region of the surface of the ceramic substrate.
[0029] With the method for selectively metallizing the surface of
the ceramic substrate according to an embodiment of the present
disclosure, the predetermined region of the surface of the ceramic
substrate is radiated using the energy beam, the ceramic body on
the predetermined region of the surface of the ceramic substrate
sags to expose a corresponding exposed functional aid dispersed in
the ceramic body, a chemical plating active center is formed by the
exposed functional aid under the action of the energy beam, and
then chemical plating is performed to form a metal plating layer on
the chemical plating active center. Because the functional aid is
dispersed in the ceramic body, the formed chemical plating active
center is embedded in the ceramic body, and the adhesive force
between the chemical plating active center and the ceramic
substrate is very high, so that the adhesive force between the
chemical plating layer and the ceramic substrate is high. In
addition, during the radiating process, the ceramic body in the
predetermined region of the surface of the ceramic substrate is
roughened to enhance the roughness of the predetermined region of
the surface of the ceramic substrate, thus further improving the
adhesive force between the chemical plating layer formed
subsequently and the ceramic substrate.
[0030] In some embodiments, during the radiating process, the
energy beam is at least one selected from a group consisting of a
laser beam, an electron beam, and an ion beam. Advantageously, the
energy beam is a laser beam. The laser radiation conditions
comprise a wavelength of 200 nm to 3000 nm, a power of 5 W to 3000
W, a frequency of 0.1 KHz to 200 KHz, a linear velocity of 0.01
mm/s to 50000 mm/s, and a fill spacing of 0.01 mm to 5 mm. A laser
apparatus used during the laser radiation may be any laser
apparatus commonly used in the prior art, for example, a YAG
laser.
[0031] The electron beam radiation condition comprises a power
density of 10.sup.1 W/cm.sup.2 to 10.sup.11 W/cm.sup.2. An
apparatus used during the electron beam radiation may be any
electron beam apparatus commonly used in the prior art, for
example, an electron beam etcher. The ion beam radiation condition
is as follows: the energy of the ion beam is 10.sup.1 eV to
10.sup.6 eV. An apparatus used during the ion beam radiation may be
any ion beam apparatus commonly used in the prior art, for example,
an Ar ion beam apparatus.
[0032] The predetermined region may be the whole surface of the
ceramic substrate, or may be a partial region of the surface of the
ceramic substrate according to the desired circuit shape, thus
forming the desired circuit on the partial region of the surface of
the ceramic substrate after the completion of the radiating.
[0033] The chemical plating technique may be any chemical plating
technique commonly used by those skilled in the art, for example, a
technique of contacting the radiated ceramic substrate with a
chemical copper plating solution. After the radiated ceramic
substrate is contacted with a chemical copper plating solution,
metal ions in the chemical copper plating solution may be reduced
to produce metal particles which wrap the surface of the chemical
plating active center and connects with each other to form a dense
metal plating layer. The plating solution used during the chemical
plating may be any chemical copper plating solution, any chemical
nickel plating solution or any chemical gold plating solution
commonly used in the prior art, without special limits. For
example, the chemical copper plating solution having a pH value of
12.5 to 13 adjusted by NaOH and H.sub.2SO.sub.4 may comprise: 0.12
mol/L CuSO.sub.4.5H.sub.2O, 0.14 mol/L Na.sub.2EDTA.2H.sub.2O, 10
mg/L potassium ferrocyanide, 10 mg/L 2,2'-bipyridine, and 0.10
mol/L glyoxylic acid (HCOCOOH).
[0034] There are no special limits on the chemical plating time,
and the chemical plating time may be controlled according to the
thickness of the formed metal plating layer. The activity of the
selected functional aid is high, and the activity of the chemical
plating active center is high accordingly, so that the plating
speed during the subsequent chemical plating is also high.
[0035] The functional aid on the non-radiated region of the surface
of the ceramic substrate may not form the chemical plating active
center, and consequently metal particles may not be deposited on
the non-radiated region of the surface of the ceramic substrate
during the chemical plating. In addition, since the non-radiated
region of the surface of the ceramic substrate is not as rough as
the radiated region of the surface of the ceramic substrate, even
if a few metal particles are deposited on the non-radiated region
of the surface of the ceramic substrate, because of low adhesive
force between the metal particles and the non-radiated region of
the surface of the ceramic substrate, the metal particles may be
easily wiped away, thus achieving the purpose of selectively
metallizing the surface of the ceramic substrate directly.
[0036] According to an embodiment of the present disclosure, a
ceramic product is provided. The ceramic product comprises: a
ceramic substrate; and a metal layer formed on a predetermined
region of a surface of the ceramic substrate, in which the ceramic
substrate comprises a ceramic body and a functional aid dispersed
in the ceramic body; the ceramic body is at least one selected from
a group consisting of an oxide of E, a nitride of E, a oxynitride
of E, and a carbide of E; E is at least one selected from a group
consisting of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, B, Al, Ga, Si,
Ge, P, As, Sc, Y, Zr, Hf, and lanthanide elements; the functional
aid is at least one selected from a group consisting of a composite
oxide of M and E, a composite nitride of M and E, a composite
oxynitride of M and E, and a composite carbide of M and E; and M is
at least one selected from a group consisting of Ti, V, Cr, Mn, Fe,
Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir,
Pt, Au, In, Sn, Sb, Pb, Bi, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,
Er, Tm, Yb, and Lu. In one embodiment, M is different from E. In
some embodiments, based on the total weight of the functional aid,
the amount of M is 0.01 wt % to 99.99 wt %, and the amount of E is
0.01 wt % to 99.99 wt %.
[0037] In some embodiments, a metal layer is formed on the
predetermined region of the surface of the ceramic substrate, and
the thickness of the predetermined region of the surface of the
ceramic substrate is smaller than that of other regions of the
surface of the ceramic substrate. Advantageously, the thickness of
the predetermined region of the surface of the ceramic substrate is
0.01-500 microns smaller than that of other regions of the surface
of the ceramic substrate. There are no special limits on the
thicknesses of the ceramic substrate and the metal layer, and the
thicknesses of the ceramic substrate and the metal layer may be
selected according to practical requirements. In some embodiments,
the metal layer has a one-dimensional, two-dimensional or
three-dimensional structure.
[0038] According to an embodiment of the present disclosure, use of
the ceramic product is provided. Particularly, the ceramic product
according to an embodiment of the present disclosure may be used
for manufacturing a power module, a mechanical structure part, a
welding substrate or a decorating member. For example, the ceramic
product according to an embodiment of the present disclosure may
apply to various fields, for example, automotive electronic
apparatuses and communication electronic apparatuses, power
electronic semiconductor modules, power electricity semiconductor
modules, direct current motor speed regulation modules, LED
packaging support plates, LED assembly circuit boards,
high-frequency switch power sources, solid-state relays, laser
industrial electronics, smart power assemblies, aerospace
equipments, aviation equipments, weapon equipments, automatic
transmissions, computer industry signal generators, IT integrated
memories, digital processing unit circuits, data converter
circuits, consumer electronic products, sensor circuits,
preamplification circuits, power amplification circuits, mechanical
loading, decorating, welding, sealing, etc.
[0039] Examples of the present disclosure will be further described
below. Raw materials used in Examples and Comparative Examples are
all commercially available.
Category 1: Examples 1-17
Example 1
[0040] (1) Ceramic Composition
[0041] The ceramic composition comprises a ceramic powder
comprising: 9.45 g of a high pure Al.sub.2O.sub.3 powder with a
particle size less than 3 .mu.m and 0.5 g of a glass powder (a
MgO\Al.sub.2O.sub.3\B.sub.2O.sub.3\CaO system glass powder); and a
functional powder: 0.05 g of TiO.sub.2.
[0042] (2) The ceramic powder and the functional powder in the
ceramic composition were mixed vigorously and uniformly, 1 g of a
PVA solution with a concentration of 6 wt % was added to the
ceramic composition, the ceramic composition and the PVA solution
were ground and granulated; the granulated powder was pressed using
a manual molding press under a pressure of 10 MPa to form a billet
with a diameter of 15 mm, and then the billet was placed in a
closed box type furnace, binder removed and sintered at a heating
rate of 5.degree. C./min at a binder removing temperature of
575.degree. C. at a sintering temperature of 1600.degree. C.,
furnace cooled to obtain a ceramic substrate.
[0043] (3) The ceramic substrate was placed on a YAG laser with a
wavelength of 1064 nm, and radiated using a laser beam under
conditions of a power of 50 W, a frequency of 25 KHz, a linear
velocity of 100 mm/s, and a fill spacing of 0.1 mm.
[0044] (4) The radiated ceramic substrate was placed in a 5 wt %
sulfuric acid solution and washed for 1 min, and then placed in a
chemical copper plating solution for chemical plating for 1 h to
obtain a ceramic product Si.
Example 2
[0045] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S2, except that: in the step (1), the functional powder was
0.05 g of VO.sub.2.
Example 3
[0046] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S3, except that: in the step (1), the functional powder was
0.05 g of MoO.sub.3.
Example 4
[0047] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S4, except that: in the step (1), the functional powder was
0.05 g of MnO.sub.2.
Example 5
[0048] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S5, except that: in the step (1), the functional powder was
0.05 g of Fe.sub.2O.sub.3.
Example 6
[0049] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S6, except that: in the step (1), the functional powder was
0.05 g of CoO.
Example 7
[0050] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method substantially identical with that in Example 1 to obtain a
ceramic product S7, except that: in the step (1), the functional
powder was 0.05 g of NiO; and in the step (3), the surface of the
ceramic substrate was radiated using an electron beam with a power
density of 10.sup.5 W/cm.sup.2 instead of the laser beam.
Example 8
[0051] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method substantially identical with that in Example 1 to obtain a
ceramic product S8, except that: in the step (1), the functional
powder was 0.05 g of CuO; and in the step (3), the surface of the
ceramic substrate was radiated using an ion beam with an energy of
10 keV instead of the laser beam.
Example 9
[0052] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S9, except that: in the step (1), the functional powder was
0.05 g of ZnO.
Example 10
[0053] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S10, except that: in the step (1), the functional powder
was 0.05 g of In.sub.2O.sub.3.
Example 11
[0054] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S11, except that: in the step (1), the functional powder
was 0.05 g of SnO.sub.2.
Example 12
[0055] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S12, except that: in the step (1), the functional powder
was 0.05 g of TiC; and in the step (2), the box type furnace was
under vacuum.
Example 13
[0056] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S13, except that: in the step (1), the functional powder
was 0.05 g of TiN; and in the step (2), the box type furnace was
under an atmosphere of nitrogen.
Example 14
[0057] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S14, except that: in the step (1), the functional powder
was 0.05 g of TaON; and in the step (2), the box type furnace was
under an atmosphere of nitrogen.
Example 15
[0058] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S15, except that: in the step (1), the functional powder
was 0.05 g of a W powder.
Example 16
[0059] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S16, except that: in the step (1), the functional powder
was 0.05 g of Nb.sub.2O.sub.5.
Example 17
[0060] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S17, except that: in the step (1), the functional powder
was 0.05 g of Cr.sub.2O.sub.3.
[0061] Category 2: Examples 18-29
Example 18
[0062] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S18, except that: in the step (1), in the ceramic powder,
0.5 g of a glass powder (a MgO\Al.sub.2O.sub.3\SiO.sub.2 system
glass powder) was used instead of 0.5 g of the
MgO\Al.sub.2O.sub.3\B.sub.2O.sub.3\CaO system glass powder in
Example 1.
Example 19
[0063] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S19, except that: in the step (1), the functional powder
was 0.05 g of VO.sub.2.
Example 20
[0064] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S20, except that: in the step (1), the functional powder
was 0.05 g of MnO.sub.2.
Example 21
[0065] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S21, except that: in the step (1), the functional powder
was 0.05 g of Fe.sub.2O.sub.3.
Example 22
[0066] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S22, except that: in the step (1), the functional powder
was 0.05 g of CoO.
Example 23
[0067] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S23, except that: in the step (1), the functional powder
was 0.05 g of NiO.
Example 24
[0068] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S24, except that: in the step (1), the functional powder
was 0.05 g of CuO.
Example 25
[0069] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S25, except that: in the step (1), the functional powder
was 0.05 g of ZnO.
Example 26
[0070] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S26, except that: in the step (1), the functional powder
was 0.05 g of In.sub.2O.sub.3.
Example 27
[0071] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S27, except that: in the step (1), the functional powder
was 0.05 g of SnO.sub.2.
Example 28
[0072] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S28, except that: in the step (1), the functional powder
was 0.05 g of Sb.sub.2O.sub.5.
Example 29
[0073] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 18, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 18 to obtain a ceramic
product S29, except that: in the step (1), the functional powder
was 0.05 g of Cr.sub.2O.sub.3.
Category 3: Examples 30-33
Example 30
[0074] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S30, except that: in the step (1), the functional powder
was Fe.sub.2O.sub.3, and the amount of Fe.sub.2O.sub.3 was 0.001
g.
Example 31
[0075] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 30, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 30 to obtain a ceramic
product S31, except that: in the step (1), the amount of the
functional powder Fe.sub.2O.sub.3 was 0.1 g.
Example 32
[0076] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 30, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 30 to obtain a ceramic
product S32, except that: in the step (1), the amount of the
functional powder Fe.sub.2O.sub.3 was 0.5 g.
Example 33
[0077] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 30, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 30 to obtain a ceramic
product S33, except that: in the step (1), the amount of the
functional powder Fe.sub.2O.sub.3 was 2.5 g.
Category 4: Examples 34-37
Example 34
[0078] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 1, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 1 to obtain a ceramic
product S34, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure 3Al.sub.2O.sub.3.2SiO.sub.2 powder with a
particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m in Example 1, and the functional powder was 0.05 g of CuO;
and in the step (2), the sintering temperature was 1550.degree.
C.
Example 35
[0079] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 34, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 34 to obtain a ceramic
product S35, except that: in the step (1), the functional powder
was 0.05 g of Fe.sub.2O.sub.3.
Example 36
[0080] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 34, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 34 to obtain a ceramic
product S36, except that: in the step (1), the functional powder
was 0.05 g of CoO.
Example 37
[0081] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 34, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 34 to obtain a ceramic
product S37, except that: in the step (1), the functional powder
was 0.05 g of MnO.sub.2.
Category 5: Examples 38-41
Example 38-41
[0082] The ceramic substrates in Examples 38-41 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 38-41 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S38-S41 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure 2MgO.2Al.sub.2O.sub.3.5SiO.sub.2 powder with a particle
size less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 1; and in the step (2), the sintering temperature was
1550.degree. C.
Category 6: Examples 42-45
Examples 42-45
[0083] The ceramic substrates in Examples 42-45 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 42-45 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S42-S45 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure LiAl[Si.sub.2O.sub.6] powder with a particle size less
than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 1; and in the step (2), the sintering temperature was
1500.degree. C.
Category 7: Examples 46-49
Examples 46-49
[0084] The ceramic substrates in Examples 46-49 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 46-49 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S46-S49 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure Na.sub.2O.11Al.sub.2O.sub.3 powder with a particle size
less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 1; and in the step (2), the sintering temperature was
1400.degree. C.
Category 8: Examples 50-53
Examples 50-53
[0085] The ceramic substrates in Examples 50-53 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 50-53 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S50-S53 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure CaO(Al.sub.2O.sub.3).sub.6 powder with a particle size
less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 1; and in the step (2), the sintering temperature was
1500.degree. C.
Category 9: Examples 54-57
Examples 54-57
[0086] The ceramic substrates in Examples 54-57 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 54-57 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S54-S57 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure LaAlO.sub.3 powder with a particle size less than 3 .mu.m
was used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder
with a particle size less than 3 .mu.m in Example 1; and in the
step (2), the sintering temperature was 1500.degree. C.
Category 10: Examples 58-61
Examples 58-61
[0087] The ceramic substrates in Examples 58-61 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 58-61 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S58-S61 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure KAl.sub.2(AlSi.sub.3O.sub.10)(OH).sub.2 powder with a
particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m in Example 1; and in the step (2), the sintering temperature
was 1400.degree. C.
Category 11: Examples 62-65
Examples 62-65
[0088] The ceramic substrates in Examples 62-65 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 62-65 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S62-S65 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure MgAl.sub.2O.sub.4 powder with a particle size less than 3
.mu.m was used instead of 9.45 g of the high pure Al.sub.2O.sub.3
powder with a particle size less than 3 .mu.m in Example 1.
Category 12: Examples 66-77
Examples 66-77
[0089] The ceramic substrates in Examples 66-77 were prepared by
methods substantially identical with those in Examples 18-29
respectively, and the surfaces of the ceramic substrates in
Examples 66-77 were metallized by methods identical with those in
Examples 18-29 to obtain ceramic products S66-S77 respectively,
except that: in the step (1), in the ceramic powder, 9.95 g of a
5Y--ZrO.sub.2 powder was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m and
0.5 g of the glass powder (the
MgO\Al.sub.2O.sub.3\B.sub.2O.sub.3\CaO system glass powder) in
Example 1; and in the step (2), the sintering temperature was
1500.degree. C.
Category 13: Examples 78-89
Examples 78-89
[0090] The ceramic substrates in Examples 78-89 were prepared by
methods substantially identical with those in Examples 18-29
respectively, and the surfaces of the ceramic substrates in
Examples 78-89 were metallized by methods identical with those in
Examples 18-29 to obtain ceramic products S78-S89 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of
5Y--ZrO.sub.2 powder was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 1; and in the step (2), the sintering temperature was
1500.degree. C.
Category 14: Examples 90-93
Examples 90-93
[0091] The ceramic substrates in Examples 90-93 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 90-93 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S90-S93 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure CaZrO.sub.3 powder with a particle size less than 3 .mu.m
was used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder
with a particle size less than 3 .mu.m in Example 1; and in the
step (2), the sintering temperature was 1500.degree. C.
Category 15: Examples 94-101
Examples 94-101
[0092] The ceramic substrates in Examples 94-101 were prepared by
methods substantially identical with those in Examples 18-25
respectively, and the surfaces of the ceramic substrates in
Examples 94-101 were metallized by methods identical with those in
Examples 18-25 to obtain ceramic products S94-S101 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure MgO powder with a particle size less than 3 .mu.m was
used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with
a particle size less than 3 .mu.m in Example 1.
Category 16: Examples 102-109
Examples 102-109
[0093] The ceramic substrates in Examples 102-109 were prepared by
methods substantially identical with those in Examples 18-25
respectively, and the surfaces of the ceramic substrates in
Examples 102-109 were metallized by methods identical with those in
Examples 18-25 to obtain ceramic products S102-S109 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure SiO.sub.2--CaO--BaO--MgO--Na.sub.2O mixed powder (with a
SiO.sub.2:CaO:BaO:MgO:Na.sub.2O weight ratio of 80:5:5:5:5) with a
particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m and 0.5 g of the glass powder (the
MgO\Al.sub.2O.sub.3\B.sub.2O.sub.3\CaO system glass powder) in
Example 1; and in the step (2), the sintering temperature was
1650.degree. C.
Category 17: Examples 110-113
Examples 110-113
[0094] The ceramic substrates in Examples 110-113 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 110-113 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S110-S113 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure Mg.sub.2SiO.sub.4 powder with a particle size less than 3
.mu.m was used instead of 9.45 g of the high pure Al.sub.2O.sub.3
powder with a particle size less than 3 .mu.m in Example 1.
Category 18: Examples 114-117
Examples 114-117
[0095] The ceramic substrates in Examples 114-117 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 114-117 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S114-S117 respectively,
except that: in the step (1), in the ceramic powder, 9.95 g of a
high pure B.sub.2O.sub.3--Al.sub.2O.sub.3--MgO--CaO mixed powder
(with a B.sub.2O.sub.3:Al.sub.2O.sub.3:MgO:CaO mole ratio of
2:1:1:1) with a particle size less than 3 .mu.m was used instead of
9.45 g of the high pure Al.sub.2O.sub.3 powder with a particle size
less than 3 .mu.m and 0.5 g of the glass powder (the
MgO\Al.sub.2O.sub.3\B.sub.2O.sub.3\CaO system glass powder) in
Example 1; and in the step (2), the sintering temperature was
1250.degree. C.
Category 19: Examples 118-121
Examples 118-121
[0096] The ceramic substrates in Examples 118-121 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 118-121 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S118-S121 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure Y.sub.2O.sub.3 powder with a particle size less than 3
.mu.m was used instead of 9.45 g of the high pure Al.sub.2O.sub.3
powder with a particle size less than 3 .mu.m in Example 1.
Category 20: Examples 122-125
Examples 122-125
[0097] The ceramic substrates in Examples 122-125 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 122-125 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S122-S125 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure BN powder with a particle size less than 3 .mu.m was used
instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with a
particle size less than 3 .mu.m in Example 1; and in the step (2),
the box type furnace was under an atmosphere of nitrogen, and the
sintering temperature was 1950.degree. C.
Category 21: Examples 126-129
Examples 126-129
[0098] The ceramic substrates in Examples 126-129 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 126-129 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S126-S129 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure Si.sub.3N.sub.4 powder with a particle size less than 3
.mu.m was used instead of 9.45 g of the high pure Al.sub.2O.sub.3
powder with a particle size less than 3 .mu.m in Example 1; and in
the step (2), the box type furnace was under an atmosphere of
nitrogen, and the sintering temperature was 1950.degree. C.
Category 22: Examples 130-133
Examples 130-133
[0099] The ceramic substrates in Examples 130-133 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 130-133 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S130-S133 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure Sialon powder with a particle size less than 3 .mu.m was
used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with
a particle size less than 3 .mu.m in Example 1; and in the step
(2), the box type furnace was under an atmosphere of nitrogen, and
the sintering temperature was 1950.degree. C.
Category 23: Examples 134-137
Examples 134-137
[0100] The ceramic substrates in Examples 134-137 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 134-137 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S134-S137 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure SiC powder with a particle size less than 3 .mu.m was
used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with
a particle size less than 3 .mu.m in Example 1; and in the step
(2), the box type furnace was under an atmosphere of nitrogen, the
sintering temperature was 2000.degree. C., and the mechanical
pressure applied during the sintering was 50 MPa.
Category 24: Examples 138-141
Examples 138-141
[0101] The ceramic substrates in Examples 138-141 were prepared by
methods substantially identical with those in Examples 18-21
respectively, and the surfaces of the ceramic substrates in
Examples 138-141 were metallized by methods identical with those in
Examples 18-21 to obtain ceramic products S138-S141 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure B.sub.4C powder with a particle size less than 3 .mu.m
was used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder
with a particle size less than 3 .mu.m in Example 1; and in the
step (2), the sintering temperature was 2250.degree. C., and the
sintering atmosphere was nitrogen.
[0102] Category 25: Examples 142-150
Example 142
[0103] (1) Ceramic Composition
[0104] The ceramic composition comprises a ceramic powder
comprising: 9.45 g of a high pure Al.sub.2O.sub.3 powder with a
particle size less than 3 .mu.m and 0.5 g of a glass powder (a
MgO\Al.sub.2O.sub.3\B.sub.2O.sub.3\CaO system glass powder); and a
functional powder: 0.05 g of CeO.sub.2.
[0105] (2) The ceramic powder and the functional powder in the
ceramic composition were mixed vigorously and uniformly, 1 g of a
PVA solution with a concentration of 6 wt % was added to the
ceramic composition, the ceramic composition and the PVA solution
were ground and granulated; the granulated powder was pressed using
a manual molding press under a pressure of 10 MPa to form a billet
with a diameter of 15 mm, and then the billet was placed in a
closed box type furnace, binder removed and sintered at a heating
rate of 5.degree. C./min at a binder removing temperature of
575.degree. C. at a sintering temperature of 1600.degree. C.,
furnace cooled to obtain a ceramic substrate.
[0106] (3) The ceramic substrate was placed on a YAG laser with a
wavelength of 1064 nm, and radiated using a laser beam under
conditions of a power of 50 W, a frequency of 25 KHz, a linear
velocity of 100 mm/s, and a fill spacing of 0.1 mm.
[0107] (4) The radiated ceramic substrate was placed in a 5 wt %
sulfuric acid solution and washed for 1 min, and then placed in a
chemical copper plating solution for chemical plating for 1 h to
obtain a ceramic product S142.
Example 143
[0108] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S143, except that: in the step (1), the functional powder
was 0.05 g of Nd.sub.2O.sub.3.
Example 144
[0109] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S144, except that: in the step (1), the functional powder
was 0.05 g of Sm.sub.2O.sub.3.
Example 145
[0110] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S145, except that: in the step (1), the functional powder
was 0.05 g of Eu.sub.2O.sub.3.
Example 146
[0111] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S146, except that: in the step (1), the functional powder
was 0.05 g of Gd.sub.2O.sub.3.
Example 147
[0112] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S147, except that: in the step (1), the functional powder
was 0.05 g of Pm.
Example 148
[0113] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S148, except that: in the step (1), the functional powder
was 0.05 g of CeN.
Example 149
[0114] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method substantially identical with that in Example 142 to obtain
a ceramic product S149, except that: in the step (1), the
functional powder was 0.05 g of Gd.sub.2O.sub.3; and in the step
(3), the surface of the ceramic substrate was radiated using an
electron beam with a power density of 10.sup.5 W/cm.sup.2 instead
of the laser beam.
Example 150
[0115] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method substantially identical with that in Example 142 to obtain
a ceramic product S150, except that: in the step (1), the
functional powder was 0.05 g of Gd.sub.2O.sub.3; and in the step
(3), the surface of the ceramic substrate was radiated using an ion
beam with an energy of 10 keV instead of the laser beam.
Category 26: Examples 151-165
Example 151
[0116] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S151, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure ZrO.sub.2 powder with a particle size less
than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142; and in the step (2), the sintering temperature was
1550.degree. C.
Example 152
[0117] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S152, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure MgO powder with a particle size less than 3
.mu.m was used instead of 9.45 g of the high pure Al.sub.2O.sub.3
powder with a particle size less than 3 .mu.m in Example 142.
Example 153
[0118] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S153, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure 3Al.sub.2O.sub.3.2SiO.sub.2 powder with a
particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m in Example 142; and in the step (2), the sintering
temperature was 1550.degree. C.
Example 154
[0119] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S154, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure 2MgO.2Al.sub.2O.sub.3.5SiO.sub.2 powder with
a particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m in Example 142; and in the step (2), the sintering
temperature was 1550.degree. C.
Example 155
[0120] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S155, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure LiAl[Si.sub.2O.sub.6] powder with a particle
size less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142; and in the step (2), the sintering temperature was
1500.degree. C.
Example 156
[0121] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S156, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure Na.sub.2O.11Al.sub.2O.sub.3 powder with a
particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m in Example 142; and in the step (2), the sintering
temperature was 1400.degree. C.
Example 157
[0122] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S157, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure CaO(Al.sub.2O.sub.3).sub.6 powder with a
particle size less than 3 .mu.m was used instead of 9.45 g of the
high pure Al.sub.2O.sub.3 powder with a particle size less than 3
.mu.m in Example 142; and in the step (2), the sintering
temperature was 1500.degree. C.
Example 158
[0123] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S158, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure LaAlO.sub.3 powder with a particle size less
than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142; and in the step (2), the sintering temperature was
1500.degree. C.
Example 159
[0124] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S159, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure KAl.sub.2(AlSi.sub.3O.sub.10)(OH).sub.2
powder with a particle size less than 3 .mu.m was used instead of
9.45 g of the high pure Al.sub.2O.sub.3 powder with a particle size
less than 3 .mu.m in Example 142; and in the step (2), the
sintering temperature was 1400.degree. C.
Example 160
[0125] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S160, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure MgAl.sub.2O.sub.4 powder with a particle size
less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142.
Example 161
[0126] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S161, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure CaZrO.sub.3 powder with a particle size less
than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142; and in the step (2), the sintering temperature was
1500.degree. C.
Example 162
[0127] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S162, except that: in the step (1), in the ceramic powder,
9.95 g of a high pure SiO.sub.2--CaO--BaO--MgO--Na.sub.2O mixed
powder (with a weight ratio of SiO.sub.2:CaO:BaO:MgO:Na.sub.2O of
80:5:5:5:5) with a particle size less than 3 .mu.m was used instead
of 9.45 g of the high pure Al.sub.2O.sub.3 powder with a particle
size less than 3 .mu.m and 0.5 g of the glass powder in Example
142; and in the step (2), the sintering temperature was
1650.degree. C.
Example 163
[0128] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S163, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure Mg.sub.2SiO.sub.4 powder with a particle size
less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142.
Example 164
[0129] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S164, except that: in the step (1), in the ceramic powder,
9.95 g of a high pure B.sub.2O.sub.3--Al.sub.2O.sub.3--MgO--CaO
mixed powder (with a B.sub.2O.sub.3:Al.sub.2O.sub.3:MgO:CaO mole
ratio of 2:1:1:1) with a particle size less than 3 .mu.m was used
was used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder
with a particle size less than 3 .mu.m and 0.5 g of the glass
powder in Example 142; and in the step (2), the sintering
temperature was 1250.degree. C.
Example 165
[0130] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product S165, except that: in the step (1), in the ceramic powder,
9.45 g of a high pure Y.sub.2O.sub.3 powder with a particle size
less than 3 .mu.m was used instead of 9.45 g of the high pure
Al.sub.2O.sub.3 powder with a particle size less than 3 .mu.m in
Example 142.
Category 27: Examples 166-169
Example 166
[0131] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product 5166, except that: in the step (1), the functional powder
was 0.001 g of Sm.sub.2O.sub.3.
Example 167
[0132] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product 5167, except that: in the step (1), the functional powder
was 0.01 g of Sm.sub.2O.sub.3.
Example 168
[0133] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product 5168, except that: in the step (1), the functional powder
was 0.05 g of Sm.sub.2O.sub.3.
Example 169
[0134] The ceramic substrate in this Example was prepared by a
method substantially identical with that in Example 142, and the
surface of the ceramic substrate in this Example was metallized by
a method identical with that in Example 142 to obtain a ceramic
product 5169, except that: in the step (1), the functional powder
was 0.25 g of Sm.sub.2O.sub.3.
Category 28: Examples 170-174
Examples 170-174
[0135] The ceramic substrates in Examples 170-174 were prepared by
methods substantially identical with those in Examples 142-146
respectively, and the surfaces of the ceramic substrates in
Examples 170-174 were metallized by methods identical with those in
Examples 142-146 to obtain ceramic products S170-S174 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure BN powder with a particle size less than 3 .mu.m was used
instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with a
particle size less than 3 .mu.m in Example 142; and in the step
(2), the box type furnace was under an atmosphere of nitrogen, and
the sintering temperature was 1950.degree. C.
Category 29: Examples 175-179
Examples 175-179
[0136] The ceramic substrates in Examples 175-179 were prepared by
methods substantially identical with those in Examples 142-146
respectively, and the surfaces of the ceramic substrates in
Examples 175-179 were metallized by methods identical with those in
Examples 142-146 to obtain ceramic products S175-S179 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure Sialon powder with a particle size less than 3 .mu.m was
used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with
a particle size less than 3 .mu.m in Example 142; and in the step
(2), the box type furnace was under an atmosphere of nitrogen, and
the sintering temperature was 1950.degree. C.
Category 30: Examples 180-184
Examples 180-184
[0137] The ceramic substrates in Examples 180-184 were prepared by
methods substantially identical with those in Examples 142-146
respectively, and the surfaces of the ceramic substrates in
Examples 180-184 were metallized by methods identical with those in
Examples 142-146 to obtain ceramic products S180-S184 respectively,
except that: in the step (1), in the ceramic powder, 9.45 g of a
high pure SiC powder with a particle size less than 3 .mu.m was
used instead of 9.45 g of the high pure Al.sub.2O.sub.3 powder with
a particle size less than 3 .mu.m in Example 142; and in the step
(2), the box type furnace was under an atmosphere of nitrogen, the
sintering temperature was 2000.degree. C., and the mechanical
pressure applied during the sintering was 50 MPa.
Comparative Example 1
[0138] This Example was performed according a method disclosed in
Example 4 in CN101550546A: a nano titanium dioxide was coated on
the surface of a glass composite material, and immersed into 1.5 L
of a chemical nickel plating solution at a temperature of
20.degree. C. to 40.degree. C. with stirring; and chemical plating
was performed by radiating under ultraviolet light with a
wavelength of 400 nm for 10-30 min to obtain a glass product
DS1.
Comparative Example 2
[0139] This Example was performed according a method disclosed in
Example 3 in CN101684551A: 0.01 mol/L cupric nitrate solution was
prepared, a solvent was isopropyl alcohol, polyvinyl alcohol and
water, nitrogen was introduced into the cupric nitrate solution to
remove oxygen, 12 g of polyacrylic resin was added to the cupric
nitrate solution to form a mixture, the mixture was spin coated on
the surface of a ceramic substrate with spin coating process
parameters of 800 rev/min and 5 s; then the ceramic substrate was
radiated under 60 Gy/min .gamma. rays (from a .gamma. ray radiation
instrument available from ChangYuan Group Ltd.) for 3 min, and
finally chemical copper plating was performed to obtain a ceramic
product DS2.
[0140] Performance Test
[0141] (1) Plating speed test of chemical plating: after copper
plated, the ceramic product in each example was subjected to
mounting with a thermosetting resin, and ground on a grinding wheel
to expose the section of the plating layer, the section of the
plating layer was polished on a 1200# sand paper, the thickness of
the plating layer on the surface of the ceramic substrate was
observed with a SEM apparatus, and the plating speed of chemical
plating in each example was recorded.
[0142] (2) Adhesive force test: 100 1 mm.times.1 mm square grids
were formed by scribing the surface of the copper plating layer in
each example with a Bagger knife, a 600 transparent scotch tape
commercially available from 3M Company, United States was flatly
bonded on the square grids without a gap and peeled at a fastest
speed at an angle of 60 degrees, and it was observed whether the
edge of a scratch was shed. If the edge of a scratch was not shed,
the adhesive force between the copper plating layer and the ceramic
substrate was 5B; if the shedding rate was between 0 and 5%, the
adhesive force between the copper plating layer and the ceramic
substrate was 4B; if the shedding rate was between 5% to 15%, the
adhesive force between the copper plating layer and the ceramic
substrate was 3B; if the shedding rate was between 15% to 35%, the
adhesive force between the copper plating layer and the ceramic
substrate was 2B; if the shedding rate was between 35% to 65%, the
adhesive force between the copper plating layer and the ceramic
substrate was 1B; and if the shedding rate was no less than 65%,
the adhesive force between the copper plating layer and the ceramic
substrate was 0B.
[0143] The test results were shown in Tables 1-2.
TABLE-US-00001 TABLE 1 Plating Adhesive Sample Speed Force S1 8
.mu.m/h 5B S2 4 .mu.m/h 5B S3 3 .mu.m/h 5B S4 4 .mu.m/h 5B S5 7
.mu.m/h 5B S6 3 .mu.m/h 5B S7 9 .mu.m/h 5B S8 8 .mu.m/h 5B S9 6
.mu.m/h 5B S10 5 .mu.m/h 5B S11 7 .mu.m/h 5B S12 2 .mu.m/h 5B S13 5
.mu.m/h 5B S14 5 .mu.m/h 5B S15 5 .mu.m/h 5B S16 1 .mu.m/h 5B S17 3
.mu.m/h 5B S18 5 .mu.m/h 5B S19 9 .mu.m/h 5B S20 4 .mu.m/h 5B S21 3
.mu.m/h 5B S22 2 .mu.m/h 5B S23 2 .mu.m/h 5B S24 2 .mu.m/h 5B S25 3
.mu.m/h 5B S26 3 .mu.m/h 5B S27 3 .mu.m/h 5B S28 3 .mu.m/h 5B S29 3
.mu.m/h 5B S30 2 .mu.m/h 5B S31 5 .mu.m/h 5B S32 6 .mu.m/h 5B S33 8
.mu.m/h 5B S34 4 .mu.m/h 5B S35 6 .mu.m/h 5B DS1 3 .mu.m/h 3B S36 5
.mu.m/h 5B S37 2 .mu.m/h 5B S38 4 .mu.m/h 5B S39 7 .mu.m/h 5B S40 6
.mu.m/h 5B S41 5 .mu.m/h 5B S42 5 .mu.m/h 5B S43 9 .mu.m/h 5B S44 4
.mu.m/h 5B S45 6 .mu.m/h 5B S46 5 .mu.m/h 5B S47 5 .mu.m/h 5B S48 4
.mu.m/h 5B S49 5 .mu.m/h 5B S50 7 .mu.m/h 5B S51 6 .mu.m/h 5B S52 5
.mu.m/h 5B S53 2 .mu.m/h 5B S54 3 .mu.m/h 5B S55 7 .mu.m/h 5B S56 5
.mu.m/h 5B S57 8 .mu.m/h 5B S58 5 .mu.m/h 5B S59 4 .mu.m/h 5B S60 7
.mu.m/h 5B S61 4 .mu.m/h 5B S62 5 .mu.m/h 5B S63 6 .mu.m/h 5B S64 7
.mu.m/h 5B S65 8 .mu.m/h 5B S66 4 .mu.m/h 5B S67 5 .mu.m/h 5B S68 8
.mu.m/h 5B S69 3 .mu.m/h 5B S70 2 .mu.m/h 5B DS2 2 .mu.m/h 3B S71 5
.mu.m/h 5B S72 6 .mu.m/h 5B S73 8 .mu.m/h 5B S74 4 .mu.m/h 5B S75 6
.mu.m/h 5B S76 5 .mu.m/h 5B S77 2 .mu.m/h 5B S78 4 .mu.m/h 5B S79 7
.mu.m/h 5B S80 6 .mu.m/h 5B S81 5 .mu.m/h 5B S82 5 .mu.m/h 5B S83 9
.mu.m/h 5B S84 4 .mu.m/h 5B S85 6 .mu.m/h 5B S86 5 .mu.m/h 5B S87 3
.mu.m/h 5B S88 5 .mu.m/h 5B S89 8 .mu.m/h 5B S90 6 .mu.m/h 5B S91 4
.mu.m/h 5B S92 6 .mu.m/h 5B S93 7 .mu.m/h 5B S94 9 .mu.m/h 5B S95 5
.mu.m/h 5B S96 5 .mu.m/h 5B S97 3 .mu.m/h 5B S98 2 .mu.m/h 5B S99 5
.mu.m/h 5B S100 6 .mu.m/h 5B S101 8 .mu.m/h 5B S102 4 .mu.m/h 5B
S103 6 .mu.m/h 5B S104 5 .mu.m/h 5B S105 2 .mu.m/h 5B S106 4
.mu.m/h 5B S107 7 .mu.m/h 5B S108 6 .mu.m/h 5B S109 5 .mu.m/h 5B
S110 5 .mu.m/h 5B S111 9 .mu.m/h 5B S112 4 .mu.m/h 5B S113 6
.mu.m/h 5B S114 5 .mu.m/h 5B S115 4 .mu.m/h 5B S116 5 .mu.m/h 5B
S117 7 .mu.m/h 5B S118 6 .mu.m/h 5B S119 5 .mu.m/h 5B S120 2
.mu.m/h 5B S121 3 .mu.m/h 5B S122 7 .mu.m/h 5B S123 5 .mu.m/h 5B
S124 8 .mu.m/h 5B S125 5 .mu.m/h 5B S126 4 .mu.m/h 5B S127 7
.mu.m/h 5B S128 4 .mu.m/h 5B S129 5 .mu.m/h 5B S130 6 .mu.m/h 5B
S131 4 .mu.m/h 5B S132 5 .mu.m/h 5B S133 7 .mu.m/h 5B S134 6
.mu.m/h 5B S135 5 .mu.m/h 5B S136 2 .mu.m/h 5B S137 3 .mu.m/h 5B
S138 7 .mu.m/h 5B S139 5 .mu.m/h 5B S140 8 .mu.m/h 5B S141 5
.mu.m/h 5B
TABLE-US-00002 TABLE 2 Plating Adhesive Sample Speed Force S142 8
.mu.m/h 5B S143 4 .mu.m/h 5B S144 3 .mu.m/h 5B S145 4 .mu.m/h 5B
S146 7 .mu.m/h 5B S147 3 .mu.m/h 5B S148 9 .mu.m/h 5B S149 8
.mu.m/h 5B S150 6 .mu.m/h 5B S151 5 .mu.m/h 5B S152 7 .mu.m/h 5B
S153 2 .mu.m/h 5B S154 5 .mu.m/h 5B S155 5 .mu.m/h 5B S156 5
.mu.m/h 5B S157 1 .mu.m/h 5B S158 3 .mu.m/h 5B S159 5 .mu.m/h 5B
S160 9 .mu.m/h 5B S161 4 .mu.m/h 5B S162 3 .mu.m/h 5B S163 2
.mu.m/h 5B S164 2 .mu.m/h 5B S165 2 .mu.m/h 5B S166 3 .mu.m/h 5B
S167 3 .mu.m/h 5B S168 3 .mu.m/h 5B S169 3 .mu.m/h 5B S170 3
.mu.m/h 5B S171 2 .mu.m/h 5B S172 5 .mu.m/h 5B S173 6 .mu.m/h 5B
S174 8 .mu.m/h 5B S175 4 .mu.m/h 5B S176 6 .mu.m/h 5B S177 5
.mu.m/h 5B S178 7 .mu.m/h 5B S179 6 .mu.m/h 5B S180 5 .mu.m/h 5B
S181 2 .mu.m/h 5B S182 3 .mu.m/h 5B S183 7 .mu.m/h 5B S184 5
.mu.m/h 5B
[0144] It may be seen from Tables 1-2 that the method for
selectively metallizing the surface of the ceramic substrate
according to an embodiment of the present disclosure is used for
metallizing the surface of the ceramic substrate, the plating speed
of chemical plating is obviously higher than that in a conventional
method; in addition, the adhesive force between the plating layer
formed after the completion of chemical plating and the ceramic
substrate is largely enhanced.
[0145] Although explanatory embodiments have been shown and
described, it would be appreciated by those skilled in the art that
the above embodiments can not be construed to limit the present
disclosure, and changes, alternatives, and modifications can be
made in the embodiments without departing from spirit, principles
and scope of the present disclosure.
* * * * *