U.S. patent application number 13/952472 was filed with the patent office on 2013-11-28 for optical waveguide having a varying index gradient.
This patent application is currently assigned to Commissariat a L'energie Atomique et aux energies Alternatives. The applicant listed for this patent is Commissariat a L'energie Atomique et aux energies Alternatives. Invention is credited to Mickael Brun, Sergio Nicoletti, Bertrand Parvitte, Virginie Zeninari.
Application Number | 20130315547 13/952472 |
Document ID | / |
Family ID | 45894712 |
Filed Date | 2013-11-28 |
United States Patent
Application |
20130315547 |
Kind Code |
A1 |
Brun; Mickael ; et
al. |
November 28, 2013 |
OPTICAL WAVEGUIDE HAVING A VARYING INDEX GRADIENT
Abstract
A photoacoustic detection device including a nanophotonic
circuit including a first chip on which is formed at least one
optical waveguide and in which is formed a set of cavities defining
a Helmholtz resonator; at least one optical source capable of
emitting an optical signal in a given wavelength range, capable of
being modulated at an acoustic modulation frequency, this source
being attached to the first chip; a second chip forming a cap for
said cavities and including acoustic sensors; and electronic
circuits for processing the output of the acoustic sensors formed
in the first or the second chip. Further, an optical waveguide
comprising, on a silicon substrate, a silicon germanium core with a
variable germanium concentration along a direction perpendicular to
the substrate, said core being covered with a cladding silicon
layer.
Inventors: |
Brun; Mickael; (Eybens,
FR) ; Nicoletti; Sergio; (Sinard, FR) ;
Parvitte; Bertrand; (Reims, FR) ; Zeninari;
Virginie; (Reims, FR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Commissariat a L'energie Atomique et aux energies
Alternatives |
Paris |
|
FR |
|
|
Assignee: |
Commissariat a L'energie Atomique
et aux energies Alternatives
Paris
FR
|
Family ID: |
45894712 |
Appl. No.: |
13/952472 |
Filed: |
July 26, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13450551 |
Apr 19, 2012 |
|
|
|
13952472 |
|
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Current U.S.
Class: |
385/131 |
Current CPC
Class: |
G01N 29/2425 20130101;
G01N 2021/1704 20130101; G01N 2201/0221 20130101; G01N 21/1702
20130101; G01N 2291/021 20130101; G02B 6/0281 20130101; Y10T
29/49007 20150115; G01N 2021/399 20130101 |
Class at
Publication: |
385/131 |
International
Class: |
G02B 6/028 20060101
G02B006/028 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 21, 2011 |
FR |
1153471 |
Claims
1. An optical waveguide comprising, on a silicon substrate, a
silicon germanium core with a variable germanium concentration
along a direction perpendicular to the substrate, said core being
covered with a cladding silicon layer.
2. The optical waveguide of claim 1, wherein the proportion of
germanium in the silicon germanium varies to obtain an index
gradient with a triangular shape.
3. The optical waveguide of claim 1, wherein the proportion of
germanium in the silicon germanium varies to obtain an index
gradient with a trapezoidal shape.
4. The optical waveguide of claim 1, wherein the cladding layer is
a layer of monocristaline silicon.
5. The optical waveguide of claim 1, wherein the cladding layer is
a layer of amorphous silicon.
6. Waveguide of claim 1 adapted to operate in a wavelength range
comprised between 3 and 10 .mu.m.
Description
BACKGROUND
[0001] 1. Technical Field
[0002] The present disclosure relates to a photoacoustic-type gas
detection device and more specifically to an optical waveguide
having a varying index gradient that may be utilized in the
detection device.
[0003] 2. Discussion Of The Art
[0004] A photoacoustic gas detection device with discrete
components using a sensor based on a Helmholtz resonator is
described in U.S. 2011/00888453, FIG. 1 of this application being
reproduced as FIG. 1 of the drawings.
[0005] This device comprises a light source (laser) 1 modulated by
a mechanical modulator 2 at an acoustic frequency. Modulated beam 3
is sent into a tube 40 of a resonant Helmholtz cell 4 containing a
gas mixture to be analyzed. This cell comprises a second tube 41
parallel to the first one. The two tubes are connected by
capillaries 43 and 44. By properly selecting the length and the
diameter of the tubes and of the capillaries, a cell at a selected
resonance frequency can be formed. The acoustic resonance frequency
is adapted to the modulation frequency imposed by modulator 2 (or
conversely). An electret microphone 10, 11 is associated with each
of tubes 40, 41. The microphone outputs are sent to a differential
amplifier 8. The output of this amplifier provides a display system
9 with electric signals representative of the amount of gas
present. The device also comprises an electronic assembly 7
enabling to control the mechanical modulator. Thus, when the laser
wavelength corresponds to an absorption stripe of a gas, the
presence of this gas and its concentration can be determined.
[0006] However, such a gas detection device formed based on
discrete elements remains limited to laboratory applications.
Indeed: [0007] it is difficult to find materials usable with
discrete elements with transmission wavelengths greater than 2.5
.mu.m while it would be desirable for a gas analysis to be possible
at wavelengths in more remote infrared, within a range from 3 to 10
.mu.m; [0008] the device is generally sensitive to temperature
variations and to vibrations which may disturb the alignment;
[0009] the implementation of the system, that is, the positioning
of its elements and their alignment, must be performed by means of
very accurate optical benches, which are very difficult to handle;
[0010] the macroscopic size of the device prevents "sensor"-type
applications capable of competing with non-selective chemical
sensors; [0011] it is not possible, with such a device, to scan a
wide range of wavelengths and it is very difficult to replace the
laser source.
[0012] Photoacoustic gas detection devices overcoming the
disadvantages of known devices are thus needed.
BRIEF SUMMARY
[0013] An object of an embodiment of the present invention is to
provide an optical waveguide waveguide having a varying index
gradient.
[0014] An embodiment of the present invention provides an optical
waveguide comprising, on a silicon substrate, a silicon germanium
core with a variable germanium concentration along a direction
perpendicular to the substrate, the core being covered with a
cladding silicon layer.
[0015] According to an embodiment of the present invention, the
proportion of germanium in the silicon germanium varies to obtain
an index gradient with a triangular shape.
[0016] According to an embodiment of the present invention, the
proportion of germanium in the silicon germanium varies to obtain
an index gradient with a trapezoidal shape.
[0017] According to an embodiment of the present invention, the
cladding layer is a layer of monocristaline silicon.
[0018] According to an embodiment of the present invention, the
cladding layer is a layer of amorphous silicon.
[0019] According to an embodiment of the present invention, the
waveguide is adapted to operate in a wavelength range comprised
between 3 and 10 .mu.m.
[0020] The foregoing and other features and advantages of the
present invention will be discussed in detail in the following
non-limiting description of specific embodiments in connection with
the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] FIG. 1, previously described, shows FIG. 1 of U.S.
application 2011/00888453;
[0022] FIG. 2A is a simplified top view of a detection device
according to an embodiment of the present invention;
[0023] FIG. 2B is a cross-section view along plane BB of FIG. 2A;
and
[0024] FIGS. 3A to 3D and 4A to 4D are respective cross-section
views and top views of the detection device of FIGS. 2A and 2B at
intermediate steps of an example of a method for manufacturing this
device.
[0025] As usual in the representation of microcomponents, the
various dimensions, and especially the layer thicknesses, are not
to scale. Those skilled in the art will refer to current literature
on the topic and/or to the specific indications given hereafter as
an example.
DETAILED DESCRIPTION
[0026] An embodiment of the present invention provides forming a
monolithic photoacoustic detection device. All microoptical,
microelectronic, and acoustic components are formed on a same
support by using micro- and nano-manufacturing techniques typical
of microelectronics and of microelectromechanical systems (MEMS).
This ensures a degree of dimensional control, a structural
stiffness, and a robustness which go far beyond what can be
obtained with an assembly of discrete elements. This integration of
the different components on a same substrate makes it possible to
accurately control the temperature of the entire detection device
by, for example, using a Peltier-effect cooler. This is
particularly important due to the fact that laser sources operating
in middle infrared, such as so-called quantum cascade lasers, are
generally sensitive to temperature variations, which may cause
wavelength shifts. Further, forming on a same support an integrated
amplifier close to the optical, acoustic, and electronic elements
enables to decrease the noise by amplifying low signals in an
amplifier integrated in the same device. A considerable gain in
signal-to-noise ratio is thus obtained. Finally, the device, due to
its miniaturization and to its portability, is usable in
circumstances where a device with discrete elements could not be
used.
[0027] More specifically, the detection device may comprise several
integrated laser sources, which may be selectively activated and
directed towards a same waveguide transmitting their beam towards
an integrated Helmholtz cell. This solves the alignment problems of
prior art devices.
[0028] FIGS. 2A to 2B respectively are a top view and a
cross-section view along plane BB of FIG. 2A, illustrating an
embodiment of a microsensor according to the present invention.
[0029] These drawings are extremely simplified and are only
intended to ease the understanding of an embodiment of the present
invention.
[0030] FIGS. 2A and 2B, where the same reference numerals designate
the same elements, will be generically described.
[0031] The entire structure is formed on a single substrate 101,
generally a silicon wafer coated with three layers 102, 103, 104,
examples of which will be given hereinafter. Waveguides are defined
in layer 103, layers 102 and 104 forming cladding layers. Assembly
102, 103, 104 may be either a trilayer (Si/Ge/Si or SiN/Si/SiN), or
an epitaxial SiGe-on-Si layer having its Ge proportion varying to
create an index gradient of triangular or trapezoidal profile
covered with an Si cladding layer (epitaxial or amorphous).
[0032] On a hollowed portion of support 101 is placed an element
105 on which semiconductor lasers, preferably of QCL (Quantum
Cascade Laser) type, are formed. As an example, this assembly may
be performed according to so-called heterogeneous hybridization
techniques currently used in micro- and nano-manufacturing
technologies. 4 lasers 107A to 107D, which are normally set to
different frequencies preferably ranging between 3 and 10 .mu.m,
have been shown. In practice, a larger number of lasers may be
used, for example, 6 lasers respectively operating at wavelengths
of 4.0, 4.2, 4.4, 4.6, 4.8, 5.0 .mu.m to cover the range from 4 to
5 .mu.m. An advantage of QCL lasers is their miniaturization
capacity and their capacity of setting the transmission wavelength,
that is, each of these lasers may have a wavelength slightly
variable around its reference wavelength, where this wavelength
adjustment may for example result from the selection of bias
currents.
[0033] According to an alternative embodiment of the present
invention, the layers of materials necessary to the forming of QCL
lasers are directly transferred onto the support, for example, by a
molecular bonding method. QCL lasers will then be directly formed
on the final support. In a second version, the entire laser may be
transferred by low-temperature polymer-type bonding.
[0034] Lasers are associated with means, not shown, of power supply
and modulation at an acoustic frequency. These lasers emit their
radiation towards respective couplers 109A to 109D, for example, of
three-dimensional taper coupler type. Such couplers couple laser
beams towards respective optical waveguides 111A to 111D connected
to the inputs of an optical multiplexer 113. The multiplexer sends
back the incident light of a selected one of input waveguides 111A
to 111D to an output waveguide 115. Waveguide 115 emerges in a
first shell 117 of a Helmholtz resonator. This Helmholtz comprises
a second shell 119 identical to the first one and connected thereto
by capillaries 121 and 123. A gas input 127 is formed in the middle
of capillary 121 and a gas output 128 is formed in the middle of
capillary 123. Tubes 117, 119 and capillaries 121, and 123
correspond to recesses formed in substrate 101 and all the layers
which cover it. It should be noted that, above the entire
structure, before forming the recesses, a layer 129, for example,
SiO.sub.2, having a thickness ranging from 1 to 10 .mu.m, will have
preferably been formed over the entire structure. Thus, the top of
cavities 117, 119 and 121, 123, which have respective depths
approximately ranging from 10 to 50 and from 1 to 5 .mu.m, is
clearly above the level at which waveguide 115 emerges in cavity
117.
[0035] The cavities are closed by a cap 131, preferably a silicon
chip, which comprises acoustic sensors 133 and means of connection
to these sensors (not shown).
[0036] Chip 131 or chip 101 also comprises integrated electronic
circuits capable of processing the sensor signals.
[0037] According to an advantage of the present invention, all the
components described hereabove may be simply formed based on a
small number of layers of a nanophotonic integrated circuit.
[0038] More specifically, waveguides 111 and 115 are formed from a
same assembly of layers that may be such as described hereabove or
that may be different, according to the available manufacturing
technologies and according to the targeted wavelength range.
[0039] According to an embodiment adapted to an operation in a
wavelength range between 3 and 10 .mu.m where the light-gas
interaction is maximum, layer 102 is a silicon layer, the couplers
and the cores of the optical waveguides are formed in a germanium
layer 103 and cladding layer 104 also is a silicon layer. Given
that the germanium layer and the silicon cladding layer are
obtained by growth above a single-crystal semiconductor layer, they
may favorably be single-crystal layers. These layers may also be
replaced with a SiGe layer comprising a variable Ge concentration
along the direction perpendicular to the substrate, thus forming a
layer with a gradient index which may have a triangular or
trapezoidal profile.
[0040] According to another alternative embodiment, the support
layer of each waveguide may be made of silicon and the cladding
layer may also be made of silicon nitride. This embodiment is
particularly well adapted to an operation within a wavelength range
from 3 to 6 .mu.m.
[0041] The operating mode of the Helmholtz cell sensor will not be
described in detail since, as to principles, it is identical to
that of a discrete system, with the advantage of being able to
operate simultaneously with several integrated lasers, and to be
able to operate within a wide range of wavelengths, given the
specific features of integrated waveguides.
[0042] It should be understood that, if an SOI-type structure is
used, the various electronic components intended for the
amplification of the signals and for their analysis may be formed
in the same structure.
[0043] Various embodiments with different variations have been
described hereabove. Those skilled in the art may combine various
elements of these various embodiments and variations without
showing any inventive step.
[0044] As a variation, instead of being coupled to waveguide(s) 111
by couplers 109, laser(s) 107 could be arranged above these
waveguides and be coupled by evanescent waves.
[0045] FIGS. 3A to 3D and 4A to 4D respectively are cross-section
views and top views illustrating successive steps of an example of
a method for manufacturing a detection device according to an
embodiment of the present invention.
[0046] FIGS. 3A and 4A show a substrate 101 coated with an assembly
of layers 102, 103, 104 shown in the form of a single layer 140.
This structure may correspond to a silicon-on-insulator (SOI) wafer
where the above-mentioned layers generally are a silicon oxide
layer and a silicon layer. It could however be started from any
substrate compatible with a micro- and nano-manufacturing
technology. The first layer may result from the deposition and/or
from an epitaxial growth of a layer having a first optical index
n.sub.cl, typically silicon, but also for example MgF.sub.2,
CaF.sub.2, SrF.sub.2, BaF.sub.2, PbF.sub.2, CdF, GaAs, AlGaAs, InP,
InAs, InSb, ZnS, CdTe, or Al.sub.2O.sub.3. The second layer may
result from any deposition and/or from an epitaxial growth of a
layer having an optical index n.sub.c>n.sub.cl, typically SiGe
or Ge, but also possibly MgF.sub.2, CaF.sub.2, SrF.sub.2,
BaF.sub.2, PbF.sub.2, CdF, GaAs, AlGaAs, InP, InAs, InSb, ZnS,
CdTe, or Al.sub.2O.sub.3. It should be noted that the second layer
is especially intended to form the core of an optical waveguide and
n.sub.c designates the index of this core. The first layer is
especially intended to form the optical cladding layer of an
optical waveguide, whereby its index is named n.sub.cl.
[0047] The second layer is etched to form photonic components
(guide, coupler, multiplexer, focusing or filtering device if
necessary). Advantageously, these patterns are manufactured by
structuring of a simple layer by photolithography and selective
etching. The portion corresponding to the waveguides is coated with
a second optical cladding layer of index n.sub.cl2<n.sub.c. This
cladding layer will typically be made of silicon and may be made of
MgF.sub.2, CaF.sub.2, SrF.sub.2, BaF.sub.2, PbF.sub.2, CdF, GaAs,
AlGaAs, InP, InAs, InSb, ZnS, CdTe, or Al.sub.2O.sub.3 to define
the guide structure. Advantageously, the material of the second
cladding layer will be the same as that selected for the first
cladding layer.
[0048] At the step illustrated in FIGS. 3B and 4B, substrate 101 is
etched to receive a chip 142 containing the different laser
source(s). Chip 142 is transferred, aligned, and attached to
substrate 101 by a ball surface mounting or by eutectic bonding,
for example, a gold layer on the substrate and a Sn layer on the
chip and a thermal processing to form an Au--Sn alloy. According to
a variation, the laser(s) may be formed by transfer of the
multilayer forming the active medium of a QCL laser by molecular
bonding, and the substrate having received the multi-layer growth
(typically GaAs) is bonded to the main substrate on the multilayer
side. The GaAs is then removed. After this, the layer is shaped as
described, for example, in Applied Physics Letters 91 (2007) 231101
to form the active QCL laser.
[0049] At the step illustrated in FIGS. 3C and 4C, the entire
structure is coated with an encapsulation layer corresponding to
layer 129 mentioned in relation with FIG. 2B.
[0050] At the step illustrated in FIGS. 3D and 4D, encapsulation
layer 129, underlying layers 140 and substrate 101 are hollowed at
the locations where cavities 117, 119, 121, and 123 are desired to
be formed. Then, the structure of cap 131 described in relation
with FIG. 2B is coated to obtain the final integrated
component.
[0051] Such alterations, modifications, and improvements are
intended to be part of this disclosure, and are intended to be
within the spirit and the scope of the present invention.
Accordingly, the foregoing description is by way of example only
and is not intended to be limiting. The present invention is
limited only as defined in the following claims and the equivalents
thereto.
* * * * *