U.S. patent application number 13/954618 was filed with the patent office on 2013-11-28 for semiconductor device and method for manufacturing same.
This patent application is currently assigned to Sumitomo Electric Device Innovations, Inc.. The applicant listed for this patent is Sumitomo Electric Device Innovations, Inc., Sumitomo Electric Industries, Ltd.. Invention is credited to Makato KIYAMA, Ken NAKATA, Masaya OKADA, Seiji YAEGASHI.
Application Number | 20130313564 13/954618 |
Document ID | / |
Family ID | 43529161 |
Filed Date | 2013-11-28 |
United States Patent
Application |
20130313564 |
Kind Code |
A1 |
OKADA; Masaya ; et
al. |
November 28, 2013 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Abstract
There are provided a semiconductor device that includes a bypass
protection unit against surge voltage or the like, achieves good
withstand voltage characteristics and low on-resistance (low
On-state voltage), has a simple structure, and is used for
large-current purpose and a method for producing the semiconductor
device. In the present invention, the semiconductor device includes
an n.sup.+-type GaN substrate 1 having a GaN layer that is in ohmic
contact with a supporting substrate, a FET having an n.sup.--type
GaN drift layer 2 in a first region R1, and an SBD having an anode
electrode in a second region R2, the anode electrode being in
Schottky contact with the n.sup.--type GaN drift layer 2. The FET
and the SBD are arranged in parallel. A drain electrode D of the
FET and a cathode electrode C of the SBD are formed on the back of
the n.sup.+-type GaN substrate 1.
Inventors: |
OKADA; Masaya; (Osaka-shi,
JP) ; KIYAMA; Makato; (Osaka-shi, JP) ;
YAEGASHI; Seiji; (Yokohama-shi, JP) ; NAKATA;
Ken; (Yokohama-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Sumitomo Electric Device Innovations, Inc.
Sumitomo Electric Industries, Ltd. |
Yokohama-shi
Osaka-shi |
|
JP
JP |
|
|
Assignee: |
Sumitomo Electric Device
Innovations, Inc.
Yokohama-shi
JP
Sumitomo Electric Industries, Ltd.
Osaka-shi
JP
|
Family ID: |
43529161 |
Appl. No.: |
13/954618 |
Filed: |
July 30, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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13531279 |
Jun 22, 2012 |
8525184 |
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13954618 |
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13126569 |
Apr 28, 2011 |
8227810 |
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PCT/JP2010/061679 |
Jul 9, 2010 |
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13531279 |
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Current U.S.
Class: |
257/76 ;
438/237 |
Current CPC
Class: |
H01L 29/872 20130101;
H01L 29/7788 20130101; H01L 29/2003 20130101; H01L 27/0727
20130101; H01L 29/7789 20130101; H01L 27/0605 20130101; H01L
29/8725 20130101; H01L 29/0692 20130101; H01L 29/8128 20130101;
H01L 21/8252 20130101; H01L 29/7786 20130101 |
Class at
Publication: |
257/76 ;
438/237 |
International
Class: |
H01L 29/872 20060101
H01L029/872; H01L 29/20 20060101 H01L029/20 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 30, 2009 |
JP |
2009-178324 |
Claims
1.-6. (canceled)
7. A method for producing a semiconductor device comprising: a step
of preparing a GaN substrate having a GaN layer that is in ohmic
contact with a supporting substrate; a step of forming an epitaxial
layered body of first conductivity type GaN-based drift
layer/second conductivity type GaN-based layer/first conductivity
type GaN-based cap layer on the GaN substrate; a step of etching
the epitaxial layered body on the GaN substrate in a first region
to form a FET opening that reaches the first conductivity type
GaN-based drift layer; a step of forming a channel-forming layer on
an inside surface of the opening; and a step of etching the
channel-forming layer and the epitaxial layered body in a second
region by masking the first region with a resist film to form an
SBD opening that reaches the first conductivity type GaN-based
drift layer, wherein an electrode is formed so as to be in Schottky
contact with the first conductivity type GaN-based drift layer in
the SBD opening and contact the second conductivity type GaN-based
layer in the opening.
8. (canceled)
9. The semiconductor device according to claim 1, wherein the
electrode that is in Schottky contact is located so as to fill the
opening in the first conductivity type drift layer and the second
conductivity type layer and extend onto the second conductivity
type layer in the periphery of the opening.
10. The method for producing the semiconductor device according to
claim 7, in the step of forming the SBD opening and the step of
forming the electrode, a bigger opening than the opening formed in
the first conductivity type GaN-based drift layer is formed in the
second conductivity type GaN-based layer, and the electrode that is
in Schottky contact is formed so as to extend onto the second
conductivity type GaN-based layer in the periphery of the opening
in the first conductivity type GaN-based drift layer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a Continuation of U.S. patent
application Ser. No. 13/531,279, filed Jun. 22, 2012, which is a
Divisional of U.S. patent application Ser. No. 13/126,569, filed
Apr. 28, 2011, which is a National Stage of International
Application No. PCT/JP2010/061679 filed Jul. 9, 2010, and which
claims the benefit of Japanese Patent Application No. 2009-178324,
filed Jul. 30, 2009, all of which are incorporated herein by
reference in their entirety.
TECHNICAL FIELD
[0002] The present invention relates to a small semiconductor
device that is used for high-power switching and can achieve good
withstand voltage characteristics and low On-state voltage, and a
method for producing the semiconductor device.
BACKGROUND ART
[0003] High reverse breakdown voltage and low on-resistance are
required for large current switching elements. To achieve the
protection against surge voltage or the like, there has been
proposed a structure in which a Schottky barrier diode (SBD) is
additionally arranged in parallel between a source and a drain of a
power field effect transistor (FET) that functions as a switching
element (PTL 1). In a GaN-based semiconductor layer formed on a
sapphire substrate, the SBD accompanying the power FET (no specific
structure is disclosed in PTL 1) includes an anode electrode that
is in Schottky contact with an AlGaN layer and a cathode electrode
that is in ohmic contact with a GaN layer, and a two-dimensional
electron gas is generated at an interface between the GaN layer and
the AlGaN layer.
CITATION LIST
Patent Literature
[0004] PTL 1: Japanese Unexamined Patent Application Publication
No. 2008-219021
SUMMARY OF INVENTION
Technical Problem
[0005] In the above-described device, the on-resistance and
withstand voltage characteristics may be improved, but the entire
structure of the device becomes complicated. In a large current
switching element, there is a tendency to use a vertical element in
which a current flows in the thickness direction of a semiconductor
layered body. However, in the case of a vertical element, the
current-carrying capacity is determined by the circumference of an
SBD, which is a protective element. Therefore, it is difficult to
increase the current-carrying capacity and a sufficient amount of
current cannot be discharged when a surge voltage or the like with
a large current is applied.
[0006] An object of the present invention is to provide a
semiconductor device that includes a bypass protection unit against
surge voltage or the like, achieves good withstand voltage
characteristics and low on-resistance (low On-state voltage), has a
simple structure, and is used for large-current purpose and a
method for producing the semiconductor device.
Solution to Problem
[0007] The semiconductor device of the present invention includes a
first conductivity type substrate, a FET having a first
conductivity type drift layer and constituting a switching element
in a first region of the substrate, and an SBD having an electrode
that is in Schottky contact with a first conductivity type layer
located in a second region of the substrate. The FET and the SBD
are arranged in parallel, the substrate is a GaN substrate, and a
backside electrode of the FET and a backside electrode (the
counterpart of a Schottky electrode) of the SBD are formed on the
back of the GaN substrate. Herein, the semiconductor device of the
present invention is intended to be any of electrical devices such
as electronic apparatuses for light electrical appliances,
electrical devices for heavy electrical equipment, electrical
devices for car electronics, and electrical devices for electric
trains or the like.
[0008] In the above-described structure, a vertical FET that is a
switching element and a vertical SBD are arranged in parallel on
the same GaN substrate, and the SBD functions as a protective
element of the FET against surge voltage or the like. The GaN
substrate has conductivity, and a backside electrode such as a
drain electrode of the FET or a cathode electrode of the SBD can be
directly formed on the back of the GaN substrate through ohmic
contact. The backside electrode may be an integrated body formed at
the same timing and may be a common electrode of the drain
electrode and the cathode electrode. In this case, a simple
structure having a small size is achieved. The channel of the FET
may have a metal oxide semiconductor (MOS) structure or a high
electron mobility transistor (HEMT) structure that generates a
two-dimensional electron gas or the like.
[0009] Furthermore, since a GaN-based drift layer or the like is
directly formed on the GaN substrate, there is no need to use a
buffer layer or the like. By simplifying the structure of the
epitaxial layered body without using a buffer layer, the production
process is simplified and thus the production time can be shortened
and the production yield can be improved. By combining the
above-described advantage with the advantages of the mounting of
the FET and the SBD onto the same GaN substrate and the formation
of a backside electrode in a shared manner, the entire structure
can be simplified and a reduction in size can be achieved.
[0010] Since a GaN-based semiconductor layer formed on a GaN
substrate is a vertical element and has good withstand voltage
characteristics and low on-resistance, a large current can be
passed. In the case where the channel has a HEMT structure, among
wide gap semiconductors, a hetero device is easily formed using GaN
(GaN includes many crystals that are epitaxially grown and have
different band gaps) compared with SiC or the like. Therefore, a
channel such as a two-dimensional electron gas layer can be easily
formed. Thus, significantly low on-resistance can be achieved.
[0011] The first conductivity type layer of the SBD that can be
called a drift layer is herein simply referred to as a first
conductivity type layer without adding "drift" to distinguish the
first conductivity type layer of the SBD from a first conductivity
type drift layer of the FET. In the description of a production
method or the like, there may be the case where a common first
conductivity type drift layer is formed in the FET and the SBD in a
certain production method. In such a case, "drift" is added to both
the first conductivity type layers.
[0012] The first conductivity type layer of the SBD and the first
conductivity type drift layer of the FET may be formed at the same
film formation timing or may be formed separately. As described
below, even in the case where they are formed at the same film
formation timing, an object that prevents or obstructs passing of
current may be disposed between the FET and the SBD.
[0013] The semiconductor device may include a second conductivity
type layer and a first conductivity type cap layer formed on the
first conductivity type drift layer in the first region and each
having an opening formed therein, wherein a cylindrical
channel-forming portion of the FET is located so as to contact an
inside surface of the opening, a gate electrode is located so that
the gate electrode and an inside surface of the second conductivity
type layer in the opening sandwich the channel-forming portion, and
the second conductivity type layer extends from the first region to
the second region and contacts a Schottky electrode of the SBD.
With this extending second conductivity type layer, a guard ring
for the Schottky electrode of the SBD can be formed, which can
improve the withstand voltage characteristics of the SBD. The
second conductivity type layer is not necessarily in ohmic contact
with the Schottky electrode of the SBD, but ohmic contact further
improves the withstand voltage characteristics. The channel-forming
portion is a regrown layer in the case of a HEMT structure, there
are the case (HEMT structure) where the channel-forming portion
itself includes a channel and the case (MOS structure) where the
channel-forming portion itself does not include a channel and is an
insulating film for forming a channel of an inversion layer in the
second conductivity type layer.
[0014] The channel portion may be a regrown layer that includes a
first GaN-based semiconductor layer through which carriers transit
and a second GaN-based semiconductor layer having a band gap larger
than that of the first GaN-based semiconductor layer. Thus, the
channel portion can be constituted by a two-dimensional electron
gas with high mobility and the on-resistance can be decreased.
[0015] The drift layer of the FET is formed by causing the first
conductivity type layer in the second region to extend to the first
region, and (d1) a continuous body can be formed without disposing
an obstacle to current between the first region and the second
region of the first conductivity type layer, (d2) an i-type
GaN-based layer can be interposed therebetween, (d3) an insulating
layer can be interposed therebetween, or (d4) a groove can be
formed therebetween. Thus, the FET and the SBD can be electrically
separated from each other at any level in order to satisfy various
required levels of reliability, resistance to surge, and the
like.
[0016] A FET region including two or more FETs grouped together and
an SBD region including two or more SBDs grouped together are
arranged on a GaN substrate, the FET region and the SBD region
having a boundary therebetween. The FETs can be connected to a
corresponding SBD or corresponding SBDs in parallel in an
individual or grouped manner. Herein, the SBD connected in parallel
with the FETs that belong to the same group belongs to the same
group. Consequently, a simple wiring configuration can be achieved
while dealing with a large current. For example, in a device
including a plurality of FETs in order to treat a large current, by
arranging the group including a plurality of FETs and one or a
plurality of SBDs in a direction perpendicular to the direction of
the boundary (the upper electrodes (anode electrode and source
electrode) of the SBD and the FET disposed with the boundary
therebetween are electrically connected to each other), the current
path for the large current can be easily made by film formation and
thus the production process can be simplified.
[0017] Two or more FET regions including two or more FETs grouped
together and one or more SBD regions including two or more SBDs
grouped together are arranged on a GaN substrate so that one out of
the two or more FET regions and the one or more SBD regions is
interposed between the others. The FETs can be connected to a
corresponding SBD or corresponding SBDs in parallel in an
individual or grouped manner. Since the grouping of the FETs and
SBDs is easily performed, a plurality of the same groups to be
connected to each other in parallel can be easily selected.
Furthermore, in the same group, the sorting into the in-phase
subgroup in which On/Off operation is conducted in phase can be
easily performed. Therefore, the sorting of a current path and a
signal line for a large current that requires On/Off operation
performed on a plurality of FETs in phase can be achieved with a
simple structure. Since the FET regions and the SBD region are
located so as to be adjacent to each other, heat generated at the
FET regions and the SBD region is easily conducted to the adjacent
region. Therefore, despite the fact that a large current can be
passed with a simple structure, the temperature is not locally
increased, whereby the thermal resistance can be improved.
[0018] Two or more FETs and one or more SBDs are arranged on a GaN
substrate. The SBDs are each located in at least one of positions
adjacent to a FET. The FETs can be connected to a corresponding SBD
or corresponding SBDs in parallel in an individual or grouped
manner. Thus, heat generated by a large current that flows through
the FETs can be dissipated. There is also an advantage in that heat
generated in the SBDs by surge voltage or the like is
dissipated.
[0019] The semiconductor device may include an interlayer
insulating film that covers gate electrodes in the plurality of
FETs, wherein upper electrodes, of the FETs, that are not covered
with the interlayer insulating film and a Schottky electrode of the
SBD corresponding to the FETs are electrically connected to each
other in an individual or grouped manner through a common wiring
layer. Thus, the current path for a large current is simplified
while being insulated from the signal line connected to the gate
electrodes with certainty, and can be easily formed in a simple
production process.
[0020] The semiconductor device may include a second conductivity
type layer and a first conductivity type cap layer each having an
opening that extends in a ridge shape and formed on the first
conductivity type drift layer in the FET, wherein a channel-forming
portion of the FET extends while contacting an inside surface of
the opening that extends in a ridge shape, a gate electrode extends
so that the gate electrode and an inside surface of the second
conductivity type layer in the ridge-shaped opening sandwich the
channel-forming portion, two source electrodes extend so as to
sandwich the extending gate electrode when viewed in plan, a
Schottky electrode of the SBD extends in a direction in which the
two source electrodes extend, and the second conductivity type
layer contacts the Schottky electrode of the SBD. Thus, the upper
electrodes (source electrodes) and the gate electrodes of the FET
can be formed, for example, in a comb shape. The Schottky electrode
is arranged so as to be electrically connected to the upper
electrodes of the FET. For example, in the case where the FET and
the SBD are formed between two base electrodes facing each other
when viewed in plan, there can be employed a structure in which two
upper electrodes (source electrodes) of the FET and a Schottky
electrode of the SDB disposed beside the FET are caused to extend
from one of the base electrodes and one or two gate electrodes of
the FET are caused to extend from the other of the base electrodes
so as to be inserted between the upper electrodes. By densely
arranging the gate electrodes and the upper electrodes of the FET,
a large current can be passed in the thickness direction while
large current density is maintained. Furthermore, since the second
conductivity type layer of the FET extends so as to be in contact
with the Schottky electrode of the SBD, the second conductivity
type layer can produce an effect similar to a guard ring
effect.
[0021] A semiconductor device is an inverter including a first chip
and a second chip different from the first chip and configured to
convert direct-current power and three-phase current power into
each other, wherein the first chip and the second chip each include
at least one FET and at least one SBD corresponding to a first
phase (U phase), the at least one FET and the at least one SBD
being the FET and the SBD in one of the semiconductor devices
described above; at least one FET and at least one SBD
corresponding to a second phase (V phase), the at least one FET and
the at least one SBD being the FET and the SBD in one of the
semiconductor devices described above; and at least one FET and at
least one SBD corresponding to a third phase (W phase), the at
least one FET and the at least one SBD being the FET and the SBD in
one of the semiconductor devices described above, and a backside
electrode of the first chip and an upper electrode of the second
chip are connected to each other through a wiring line in each of
the first phase (U phase) to the third phase (W phase). Thus, the
three-phase AC-DC inverter having good withstand voltage
characteristics and low on-resistance can be simplified and the
entire structure of the device can be reduced in size.
[0022] A method for producing a semiconductor device of the present
invention includes a step of preparing a GaN substrate; a step of
forming an epitaxial layered body of first conductivity type
GaN-based drift layer/second conductivity type GaN-based
layer/first conductivity type GaN-based cap layer on the GaN
substrate; a step of etching the epitaxial layered body on the GaN
substrate in a first region to form a FET opening that reaches the
first conductivity type GaN-based drift layer; a step of forming a
channel-forming layer on an inside surface of the opening; and a
step of etching the channel-forming layer and the epitaxial layered
body in a second region by masking the first region with a resist
film to form an SBD opening that reaches the first conductivity
type GaN-based drift layer, wherein an electrode that is in
Schottky contact with the first conductivity type GaN-based drift
layer in the SBD opening is formed.
[0023] By the above-described method, a FET with a protection
circuit can be formed on the GaN substrate. The on-resistance of a
GaN-based semiconductor layer can be significantly reduced because
a heterointerface can be easily formed by stacking GaN-based
semiconductors having different band gaps (there are many GaN-based
semiconductors that have different band gaps and are epitaxially
grown) and the channel is easily formed using a HEMT structure. In
addition, the GaN-based semiconductor has good withstand voltage
characteristics. As a result, a switching element having good
withstand voltage characteristics and on-resistance can be formed
in a simple structure with a small size. Since this FET is a
vertical element through which a current flows in the thickness
direction of the epitaxial layered body, a large current can be
passed.
[0024] Another method for producing a semiconductor device of the
present invention includes a step of preparing a GaN substrate; a
step of forming an epitaxial layered body of first conductivity
type GaN-based drift layer/second conductivity type GaN-based
layer/first conductivity type GaN-based cap layer on the GaN
substrate; a step of etching the epitaxial layered body in a first
region and a second region of the GaN substrate to form a FET
opening in the first region, the FET opening reaching the first
conductivity type GaN-based drift layer, and an SBD opening in the
second region, the SBD opening reaching the first conductivity type
GaN-based drift layer; a step of forming an insulating film so that
the insulating film covers the FET opening, the SBD opening, and an
unetched portion of the epitaxial layered body; and, in the FET
opening, a step of forming a gate electrode so that the gate
electrode and an inside surface of the second conductivity type
GaN-based layer in the opening sandwich the insulating film,
wherein an electrode that is in Schottky contact with the first
conductivity type GaN-based drift layer is formed in the SBD
opening by making a hole that penetrates through the insulating
film.
[0025] Thus, a metal-insulator-semiconductor field effect
transistor (MISFET) with a protection circuit can be formed on the
common GaN substrate in a simple structure with a small size. Since
this FET is a vertical element through which a current flows in the
thickness direction of the epitaxial layered body, a large current
can be passed. A GaN-based semiconductor layer has good withstand
voltage characteristics and low on-resistance. Furthermore, in the
above-described method, the FET and the SBD can be efficiently
formed using the gate insulating film of a MIS as a mask.
Advantageous Effects of Invention
[0026] According to the present invention, there can be provided a
semiconductor device that includes an SBD bypass protection unit
against surge voltage or the like, achieves good withstand voltage
characteristics and low on-resistance (low On-state voltage), has a
simple structure, and is used for large-current purpose and a
method for producing the semiconductor device.
BRIEF DESCRIPTION OF DRAWINGS
[0027] FIG. 1 shows a semiconductor device according to a first
embodiment of the present invention. FIGS. 1(a) to 1(c) are a
sectional view, a plan view, and a circuit diagram,
respectively.
[0028] FIG. 2 is a diagram for describing a channel-forming layer
of a FET of the semiconductor device shown in FIG. 1.
[0029] FIG. 3 is a diagram for describing an SBD of the
semiconductor device shown in FIG. 1. FIG. 3(a) is a plan view and
FIG. 3(b) is a sectional view taken along line IIIB-IIIB.
[0030] FIG. 4 is a diagram for describing a production process of
the semiconductor device shown in FIG. 1. FIG. 4(a) shows the state
in which an epitaxial layered body has been formed, FIG. 4(b) shows
the state in which a FET opening has been formed, FIG. 4(c) shows
the state in which a channel-forming layer (HEMT structure) has
been formed, FIG. 4(d) shows the state in which an SBD opening has
been formed, and FIG. 4(e) shows the state in which a resist
pattern has been formed before a source electrode is formed.
[0031] FIG. 5 is a diagram showing a semiconductor device according
to a second embodiment of the present invention.
[0032] FIG. 6 is a diagram showing a semiconductor device according
to a modification 1 of the second embodiment of the present
invention.
[0033] FIG. 7 is a diagram showing a semiconductor device according
to a modification 2 of the second embodiment of the present
invention.
[0034] FIG. 8 is a diagram showing a semiconductor device according
to a modification 3 of the second embodiment of the present
invention.
[0035] FIG. 9 is a diagram showing a channel portion of a FET in a
semiconductor device according to a third embodiment of the present
invention.
[0036] FIG. 10 shows a method for producing the semiconductor
device according to the third embodiment of the present invention.
FIG. 10(a) shows the state in which a FET opening and an SBD
opening have been formed and FIG. 10(b) shows the state in which a
surface has been covered with a gate insulating film.
[0037] FIG. 11 is a plan view of a semiconductor device according
to a fourth embodiment of the present invention.
[0038] FIG. 12 is a sectional view showing the wiring in the
semiconductor device shown in FIG. 11.
[0039] FIG. 13 is a plan view of a semiconductor device according
to a fifth embodiment of the present invention.
[0040] FIG. 14 is a plan view of a semiconductor device according
to a sixth embodiment of the present invention.
[0041] FIG. 15 is a plan view of a semiconductor device according
to a modification 1 of the sixth embodiment of the present
invention.
[0042] FIG. 16 is a plan view of a semiconductor device according
to a modification 2 of the sixth embodiment of the present
invention.
[0043] FIG. 17 is a plan view of a semiconductor device according
to a modification 3 of the sixth embodiment of the present
invention.
[0044] FIG. 18 is a plan view of a semiconductor device according
to a modification 4 of the sixth embodiment of the present
invention.
[0045] FIG. 19 is a plan view of a semiconductor device according
to a seventh embodiment of the present invention.
[0046] FIG. 20 is a plan view of a semiconductor device according
to a modification of the seventh embodiment of the present
invention.
[0047] FIG. 21(a) is a plan view of a three-phase AC-DC inverter
that is a semiconductor device according to an eighth embodiment of
the present invention, and FIG. 21(b) is a circuit diagram.
DESCRIPTION OF EMBODIMENTS
First Embodiment
[0048] FIG. 1(a) is a diagram showing a semiconductor device 10
according to a first embodiment of the present invention. FIG. 1(b)
is a plan view of the semiconductor device shown in FIG. 1(a). The
semiconductor device 10 is formed of a substrate and a GaN layer
that is formed on the substrate through ohmic contact, and includes
a FET constituting a switching element and an SBD that serves as a
protective element of the FET. The carrier density of an
n.sup.+-type GaN substrate 1 is, for example, about
3.times.10.sup.18 cm.sup.-3. The FET is formed in a first region R1
and the SBD is formed in a second region R2. An epitaxial layered
body of n.sup.--type GaN drift layer 2/p-type AlGaN layer
3/n.sup.+-type GaN cap layer 4 is formed on the n.sup.+-type GaN
substrate 1 in that order. The p-type AlGaN layer 3 increases the
back potential of a channel to achieve the normally-off operation
of the FET. In the first region R1 where the FET is formed, an
opening that reaches the n.sup.--type GaN drift layer 2 from the
upper surface of the epitaxial layered body 2, 3, and 4 is formed,
and a channel-forming layer 5 is formed on the inside surface of
the opening. For the sake of convenience of the production process,
the channel-forming layer 5 is formed up to the second region R2
where the SBD is formed, but this has no particular meaning. The
channel-forming layer 5 of the FET is composed of a GaN-based
semiconductor layer that is epitaxially grown on the inside surface
of the opening and another GaN-based semiconductor layer having a
band gap larger than that of the GaN-based semiconductor layer. In
the channel-forming layer 5, a two-dimensional electron gas is
generated by a signal voltage applied to a gate electrode G. A
source electrode S of the FET is formed on the entire surface, but
some portions (a gate region G of the FET and an anode region A of
the SBD) of the source electrode A are removed by forming an
opening.
[0049] In the On state, electrons that are carriers flow through
the path of source electrode S.fwdarw.n.sup.+-type GaN cap layer
4.fwdarw.channel-forming layer 5 (two-dimensional electron gas
layer).fwdarw.n.sup.--type GaN drift layer 2.fwdarw.n.sup.+-type
GaN substrate 1.fwdarw.drain electrode D, which is a backside
electrode. This electron-flowing path extends in the thickness
direction of the epitaxial layered body or the like, which
constitutes a vertical element.
[0050] An electrode of the SBD that achieves Schottky contact is an
anode A, and electrons flow through the path of anode
A.fwdarw.n.sup.--type GaN drift layer 2.fwdarw.n.sup.+-type GaN
substrate 1.fwdarw.cathode C, which is a backside electrode. This
SBD has a feature in that the p-type AlGaN layer 3 of the FET
extends from the first region R1 to the second region R2 and
contacts the anode A so as to surround the anode A. The contact
between the p-type AlGaN layer 3 and the anode A is preferably an
ohmic contact to further improve withstand voltage characteristics,
but is not necessarily an ohmic contact. The anode A of the SBD and
the source electrode S of the FET are electrically connected to
each other through a wiring layer K1. The cathode C, which is a
backside electrode, and the drain D are formed in an integrated
manner by forming a conductive layer at the same film formation
timing. Obviously, they are electrically connected to each
other.
[0051] FIG. 1(c) is a circuit diagram of the semiconductor device
shown in FIG. 1. The FET constituting a switching element is
connected to the SBD in parallel in terms of an electric circuit.
For example, regardless of the presence or absence of an On-signal
to the gate electrode of the FET, when a surge voltage or the like
is applied to the source electrode S or the drain electrode, the
SBD is brought into its On state to allow current to flow and
functions as a bypass protection unit that prevents the application
of a surge voltage to the FET for a certain period of time. In a
Schottky electrode that is composed of Ni/Au and is in Schottky
contact with GaN, a current can be caused to rise by applying a
forward voltage of about 1 V. In contrast, such a voltage in the
case of a GaN pn diode having a pn junction is about 3 V. Thus, a
Schottky diode can bypass a surge current at an earlier timing of
surge voltage rise than a pn diode.
[0052] FIG. 2 is a diagram for describing the channel-forming layer
5 of the FET. The channel-forming layer 5 includes an electron
conduction layer 5b formed of an undoped GaN layer or an undoped
InGaN layer and an AlGaN layer 5a that supplies electrons and has a
band gap larger than that of the electron conduction layer 5b.
Although not shown in FIG. 2, an intermediate layer composed of an
insulator such as AlN may be disposed between the electron
conduction layer 5b and the electron supply layer 5a. The electron
conduction layer 5b, the electron supply layer 5a, and the like are
layers continuously formed through regrowth in the same growth
chamber. By applying a signal voltage to the gate electrode G, a
two-dimensional electron gas layer is formed at an interface
between the electron conduction layer 5b and the electron supply
layer 5a and thus the channel is brought into its On state. As long
as the channel-forming layer 5 is not brought into its On state,
electrons do not move from the n.sup.+-type GaN cap layer 4 to the
n.sup.--type GaN drift layer 2 because of the presence of the
p-type AlGaN barrier layer 3, thereby achieving normally-off
operation. As shown in FIGS. 3(a) and 3(b), the p-type AlGaN
barrier layer 3 is in contact with the periphery of the Schottky
electrode (anode electrode) A of the SBD and functions as a guard
ring for the anode electrode A. The anode electrode A is formed so
as to extend onto the p-type AlGaN barrier layer 3 in the periphery
of the opening. With this guard ring, the withstand voltage
characteristics of the anode electrode A of the SBD can be
improved. The AlGaN layer 5a that supplies electrons may be doped
with an n-type impurity. The doping with an n-type impurity can
further decrease the on-resistance. Si may be doped as the n-type
impurity in an amount of about 1.times.10.sup.18 cm.sup.-3.
[0053] In the semiconductor device shown in FIG. 1, the GaN
substrate has an n conductivity type, and backside electrodes such
as the drain electrode D of the FET or the cathode electrode C of
the SBD can be directly formed on the back of the GaN substrate
through ohmic contact in a shared manner. Furthermore, since a
GaN-based drift layer or the like is directly formed on the GaN
substrate 1, there is no need to use a buffer layer or the like. By
simplifying the structure of the epitaxial layered body without
using a buffer layer, the production process is simplified and thus
the production time can be shortened and the production yield can
be improved.
[0054] By combining the above-described advantage with the
advantages of the mounting of the FET and the SBD onto the same GaN
substrate, the direct formation of a backside electrode, and the
formation of a backside electrode in a shared manner, the entire
structure can be simplified and a reduction in size can be
achieved. Since a GaN-based semiconductor layer formed on a GaN
substrate is a vertical element and has good withstand voltage
characteristics and low on-resistance, a large current can be
passed. In this embodiment, the channel has a HEMT structure. Among
wide gap semiconductors, GaN has many crystals that are epitaxially
grown and have different band gaps compared with SiC or the like.
Therefore, the channel-forming layer 5 such as a two-dimensional
electron gas layer can be easily formed. In the FET shown in FIG.
1, this channel-forming layer 5 having a HEMT structure can provide
significantly low on-resistance.
[0055] With the extending p-type AlGaN layer 3, a guard ring for
the Schottky electrode A of the SBD can be formed, which can
improve the withstand voltage characteristics of the SBD.
[0056] A method for producing the semiconductor device 10 shown in
FIG. 1 will now be described. First, as shown in FIG. 4(a), an
epitaxial layered body of n.sup.--type GaN drift layer 2/p-type
AlGaN layer 3/n.sup.+-type GaN cap layer 4 is formed on an
n.sup.+-type GaN substrate 1. The film formation is preferably
performed by metal organic vapor phase epitaxy (MOVPE) at a growth
temperature of about 1050.degree. C., but may be performed by
molecular beam epitaxy (MBE). The thickness and carrier density are
exemplified below. The n.sup.--type GaN drift layer 2 has a
thickness of 5 .mu.m and a carrier density of 1.0.times.10.sup.16
cm.sup.-3, the p-type AlGaN layer 3 has a thickness of 0.5 .mu.m
and a carrier density of 5.0.times.10.sup.16 cm.sup.-3, and the
n.sup.+-type GaN cap layer 4 has a thickness of 0.3 .mu.m and a
carrier density of 5.0.times.10.sup.17 cm.sup.-3. In the case where
the function of the p-type AlGaN layer 3 as a guard ring in the SBD
is regarded as important, the carrier density may be increased to
1.times.10.sup.17 cm.sup.-3 to 1.times.10.sup.19 cm.sup.-3 from
5.0.times.10.sup.16 cm.sup.-3.
[0057] Next, as shown in FIG. 4(b), an opening H1 will be formed in
a first region by etching. A resist pattern having an opening that
corresponds to an opening H1 is formed. The opening H1 is then
formed in the epitaxial layered body 2, 3, and 4 by reactive ion
etching (RIE) using a chlorine-based gas. Consequently, since a
crystal face is exposed at the inside surface (wall surface) of the
opening H1, the epitaxial growth of a channel-forming layer 5 can
be performed. The inside surface of the opening H1 has an
inclination angle of about 20.degree. relative to the surface of
the GaN substrate. This inclination angle can be adjusted by
changing the types of gases used in RIE or the flow ratio between
gaseous components contained in a mixed gas.
[0058] Next, as shown in FIG. 4(c), the channel-forming layer 5
constituted by electron conduction layer 5b/electron supply layer
5a will be regrown. First, an i-type GaN layer of the electron
conduction layer 5b is preferably formed by metal-organic chemical
vapor deposition (MOCVD) at a growth temperature of about
1020.degree. C. so as to have a thickness of about 50 nm. The AlGaN
electron supply layer 5a is then preferably grown so as to have a
thickness of about 30 nm. An AlN intermediate layer may be formed
between the i-type GaN layer 5b and the AlGaN layer 5a at a growth
temperature of about 1080.degree. C. so as to have a thickness of
about 2 nm.
[0059] To ensure a certain film formation rate, this regrown layer
is preferably formed at a high VIII ratio and at a temperature
lower than the growth temperature at which the epitaxial layered
body has been formed. The above-described film formation may be
performed by MBE instead of MOVPE. Subsequently, as shown in FIG.
4(d), an opening H2 of the SBD is formed using a resist mask
pattern in the same process as that of the opening H1 of the FET. A
resist pattern having an opening at a position corresponding to a
source electrode S is then formed as shown in FIG. 4(e), and a
source electrode is formed of Ti/Al. Instead of Ti/Al, any alloy
can be used as long as the alloy is brought into ohmic contact with
the n.sup.+-type GaN cap layer 4. After that, a wiring layer K1 on
the upper surface is formed and backside electrodes D and C are
formed of Ti/Al/Ti/Al. Herein, alloying heat treatment is
preferably performed. A resist pattern having an opening at a
position corresponding to a gate electrode G is then formed, and a
gate electrode G composed of Ni/Au is formed on the electron supply
layer 5a of the channel-forming layer 5. The gate electrode may be
formed of Pt/Au, Pd/Au, Mo/Au, or the like, instead of Ni/Au.
[0060] A resist pattern having an opening at a position
corresponding to an anode electrode A is then formed, and a
Schottky electrode A is formed of Ni/Au. In some cases, the gate of
the FET may be shared. Thus, the semiconductor device shown in FIG.
1 can be obtained.
Second Embodiment
[0061] FIG. 5 is a diagram showing a semiconductor device 10
according to a second embodiment of the present invention. This
embodiment is the same as the first embodiment in that a FET
constituting a switching element and an SBD that serves as a
protective element of the FET are disposed on an n.sup.+-type GaN
substrate 1. However, a p-type AlGaN layer 3 of the FET does not
extend to the SBD and functions as a barrier layer of only the FET.
Therefore, a layer that serves as a guard ring for the Schottky
electrode A of the SBD is not formed, and a protective layer 23
covers the periphery of the Schottky electrode and the periphery of
the source electrode S of the FET.
[0062] In the semiconductor device 10 shown in FIG. 5, the p-type
AlGaN layer 3 of the FET does not extend to the region of the SBD.
Thus, there are two production methods below. Both of the
production methods can be performed using typical means.
(s1): A production method in which an epitaxial layered body of
n.sup.--type GaN drift layer 2/p-type AlGaN layer 3/n.sup.+-type
GaN cap layer 4 is formed on an n.sup.+-type GaN substrate 1 in
that order, and then a portion of the SBD is removed by RIE until
the n.sup.--type GaN drift layer 2 is exposed (s2): A production
method in which an n.sup.--type GaN drift layer 2 is formed on the
entire n.sup.+-type GaN substrate 1, and then p-type AlGaN layer
3/n.sup.+-type GaN cap layer 4 is selectively grown only in a
portion of the FET.
[0063] In the production method (s2), an insulating mask pattern
for selective growth is used. In the semiconductor device 10 shown
in FIG. 5, the n.sup.--type GaN drift layer 2 is continuously
formed in the regions of the FET and the SBD in a shared manner.
However, the n.sup.--type GaN drift layer 2 may be separately
formed in the regions of the FET and the SBD (refer to FIG. 8).
[0064] In the structure shown in FIG. 5, the same advantage can be
achieved in terms of the function of the SBD that protects the FET,
which is a switching element, from surge voltage or the like. That
is, except that a guard ring for the Schottky electrode A of the
SBD is not provided, other advantages are the same as those of the
semiconductor device of the first embodiment. In other words, a
vertical FET and a vertical SBD are arranged in parallel on the
same GaN substrate 1, and the SBD functions as a protective element
of the FET against surge voltage or the like. The GaN substrate 1
has an n.sup.+ conductivity type, and backside electrodes such as
the drain electrode D of the FET and the cathode electrode C of the
SBD are directly formed on the back of the GaN substrate 1 through
ohmic contact in a shared manner. Furthermore, since an
n.sup.--type GaN drift layer 2 is directly formed on the GaN
substrate, there is no need to use a buffer layer or the like. By
simplifying the structure of the epitaxial layered body without
using a buffer layer, the production process is simplified and thus
the production time can be shortened and the production yield can
be improved. By combining the above-described advantage with the
advantages of the mounting of the FET and the SBD onto the same GaN
substrate 1 and the like, the entire structure can be simplified
and a reduction in size can be achieved. Since the n.sup.--type GaN
layer 2, the p-type AlGaN layer 3, or the like formed on the GaN
substrate 1 is a vertical element and has good withstand voltage
characteristics and low on-resistance, a large current can be
passed. Moreover, significantly low on-resistance can be achieved
because of the two-dimensional electron gas layer formed in the
channel-forming layer 5.
Modification 1 of Second Embodiment
[0065] FIG. 6 shows a modification 1 of the semiconductor device
shown in FIG. 5, the modification 1 being one of the embodiments of
the present invention. The semiconductor device 10 shown in FIG. 6
has the same basic structure as that of the semiconductor device
shown in FIG. 5 and includes a FET that performs switching in
accordance with the presence or absence of two-dimensional electron
gas formation and an SBD that functions as a protective element of
the FET. The difference between the semiconductor devices of FIGS.
5 and 6 is that, in the n--type GaN drift layer 2 shared by the FET
and the SBD, an iGaN region 13 is formed at the boundary between
the FET and the SBD. The iGaN region 13 separates a drift layer of
the FET and a drift layer of the SBD. This separation can increase
the resistance to a surge and suppress the occurrence of a
breakdown.
[0066] Other advantages are the same as those of the semiconductor
device of the second embodiment (FIG. 5). In other words, a
vertical FET and a vertical SBD are arranged in parallel on the
same GaN substrate 1, and the SBD functions as a protective element
of the FET against surge voltage or the like. The GaN substrate 1
has an n.sup.+ conductivity type, and backside electrodes such as
the drain electrode D of the FET and the cathode electrode C of the
SBD are directly formed on the back of the GaN substrate 1 through
ohmic contact in a shared manner. Furthermore, since an
n.sup.--type GaN drift layer 2 is directly formed on the GaN
substrate, there is no need to use a buffer layer or the like. By
simplifying the structure of the epitaxial layered body without
using a buffer layer, the production process is simplified and thus
the production time can be shortened and the production yield can
be improved. By combining the above-described advantage with the
advantages of the mounting of the FET and the SBD onto the same GaN
substrate 1 and the like, the entire structure can be simplified
and a reduction in size can be achieved. Since the n.sup.- GaN
layer 2, the p-type AlGaN layer 3, or the like formed on the GaN
substrate 1 is a vertical element and has good withstand voltage
characteristics and low on-resistance, a large current can be
passed. Moreover, significantly low on-resistance can be achieved
because of the two-dimensional electron gas layer formed in the
channel-forming layer 5.
Modification 2 of Second Embodiment
[0067] FIG. 7 shows a modification 2 of the semiconductor device
shown in FIG. 5, the modification 2 being one of the embodiments of
the present invention. The semiconductor device 10 shown in FIG. 7
has the same basic structure as that of the semiconductor device
shown in FIG. 5 and includes a FET that performs switching in
accordance with the presence or absence of two-dimensional electron
gas formation and an SBD that functions as a protective element of
the FET. The difference between the semiconductor devices of FIGS.
5 and 7 is that, in the n--type GaN drift layer 2 shared by the FET
and the SBD, a groove 14 is formed at the boundary between the FET
and the SBD. The groove 14 separates a drift layer of the FET and a
drift layer of the SBD.
[0068] Other advantages are the same as those of the semiconductor
device of the modification 1 of the second embodiment (FIG. 6),
whereby the description is omitted.
Modification 3 of Second Embodiment
[0069] FIG. 8 shows a modification 3 of the semiconductor device
shown in FIG. 5, the modification 3 being one of the embodiments of
the present invention. The modification 3 can be regarded as a
modification of the modification 2 in that the groove 14 of the
semiconductor device of the modification 2 shown in FIG. 7 is
formed and an insulating mask 15 for selective growth is left at
the bottom of the groove 14. The semiconductor device of the
modification 3 (FIG. 8) can be produced by a method (s3) obtained
by slightly modifying the method (s2).
[0070] The semiconductor device of the modification 3 has the same
basic structure as that of the semiconductor device shown in FIG. 5
and includes a FET that performs switching in accordance with the
presence or absence of two-dimensional electron gas formation and
an SBD that functions as a protective element of the FET. The
difference between the semiconductor devices of FIGS. 5 and 8 is
that, in the n--type GaN drift layer 2 shared by the FET and the
SBD, a groove 14 is formed at the boundary between the FET and the
SBD and an insulating film 15 is formed at the bottom of the groove
14. The groove 14 and the insulating film 15 separate a drift layer
of the FET and a drift layer of the SBD. Other advantages are the
same as those of the semiconductor device of the modification 1 of
the second embodiment (FIG. 6), whereby the description is
omitted.
Third Embodiment
[0071] FIG. 9 is a diagram showing a channel portion of a FET in a
semiconductor device according to a third embodiment of the present
invention. The SBD has the same structure as that of the
semiconductor device shown in FIG. 1. This embodiment has a feature
in that the channel of the FET has a MOS structure. That is, a gate
insulating film 7 is formed on the inside surface of the opening of
epitaxial layered bodies of n.sup.--type GaN drift layer 2/p-type
AlGaN layer 3/n.sup.+-type GaN cap layer 4 and i-GaN electron
conduction layer 5b/i-AlGaN electron supply layer 5a, and a gate
electrode G is located on the gate insulating film 7. A source
electrode S is formed so as to be in contact with the p.sup.-AlGaN
layer, but may be in contact with the n.sup.+GaN layer. The channel
is an inversion layer that is formed in the p-type AlGaN layer by
applying a positive potential to the gate electrode G.
[0072] The semiconductor device of this embodiment is the same as
that of the first embodiment, except that the structure of a
channel in the FET is changed to a MIS structure from the HEMT
structure constituted by the two-dimensional electron gas layer in
the first embodiment. A vertical FET and a vertical SBD are
arranged in parallel on the same GaN substrate 1, and the SBD
functions as a protective element of the FET against surge voltage
or the like. Backside electrodes such as the drain electrode D of
the FET and the cathode electrode C of the SBD are directly formed
on the back of the GaN substrate 1 through ohmic contact in a
shared manner. Since an n.sup.--type GaN drift layer 2 is directly
formed on the GaN substrate, there is no need to use a buffer layer
or the like. Therefore, the production process is simplified and
thus the production time can be shortened and the production yield
can be improved. By combining the above-described advantage with
the advantage of the mounting of the FET and the SBD onto the same
GaN substrate 1, the entire structure can be simplified and a
reduction in size can be achieved. Since the n-GaN layer 2, the
p-type AlGaN layer 3, or the like formed on the GaN substrate 1 is
a vertical element and has good withstand voltage characteristics
and low on-resistance, a large current can be passed.
[0073] The production method in the case where a channel portion
having a MIS structure is formed is different from that shown in
FIG. 4 in the following point. That is, an epitaxial layered body
of n.sup.--type GaN drift layer 2/p-type AlGaN layer 3/n.sup.+-type
GaN cap layer 4 is formed on an n.sup.+-type GaN substrate 1 in
that order. As shown in FIG. 10(a), a FET opening H1 and an SBD
opening H2 are then formed at positions corresponding to the FET
and the SBD, respectively. Subsequently, as shown in FIG. 10(b),
regrown layers are formed in the FET opening H1 in the order of an
i-GaN electron conduction layer 5b and an i-AlGaN electron supply
layer 5a. The entire surface is then covered with a gate insulating
film 7. After that, a FET is formed by a typical method and then an
SBD is formed.
Fourth Embodiment
[0074] FIG. 11 is a plan view of a semiconductor device according
to a fourth embodiment of the present invention. In this
embodiment, two or more FETs and one or more SBDs are arranged on a
GaN substrate. The SBDs are each located in at least one of
positions adjacent to a FET. The FETs are connected to a
corresponding SBD or corresponding SBDs in parallel in an
individual or grouped manner. Herein, the FETs in the same group
are connected to each other in parallel. Thus, the SBDs connected
in parallel to the FETs in the same group are all connected to each
other in parallel. However, all of the FETs/SBDs formed on the same
GaN substrate are not necessarily connected to each other in
parallel.
[0075] FIG. 12 is a diagram showing an electric wiring
configuration for one FET and one SBD that are adjacent to each
other and are connected to each other in parallel (belong to the
same group). In the FET and the SBD that belong to the same group,
after the gate electrode G in the FET is coated with an interlayer
insulating film 31, the source electrode S and the anode electrode
(Schottky electrode) A are electrically connected to each other
through a wiring line K1 and a common wiring line K. Similarly, in
the same group, the drain electrode D of the FET and the cathode C
of the SBD, which are backside electrodes, are also electrically
connected to each other in a shared manner. By employing such a
wiring line configuration, a wiring line that has a simple
structure, operates a plurality of FETs, and has a high
current-carrying capacity can be produced in a simple production
process. In this wiring structure, a signal line (not shown) and
the gate electrode G to which the signal line is connected are
protected from a large current with certainty. Therefore, the
On/Off operation of a large current can be performed with certainty
using signal line/gate electrode G while high stability is
maintained.
[0076] As shown in FIG. 12, the FET has the same structure as that
in the semiconductor device shown in FIG. 1. The SBD also has the
same structure as that in the semiconductor device shown in FIG. 1.
Regarding the plurality of FETs in the same group, a plurality of
FETs may be considered to be arranged in parallel instead of one
FET of the semiconductor device shown in FIG. 1. As shown in FIG.
12, the source electrode S and the like are electrically connected
to each other through the common wiring line K while the gate
electrode G is coated with the interlayer insulating film 31. In
the parallel arrangement in this case, the FET and the SBD are not
necessarily arranged so as to be spatially adjacent to each other
and may be connected to each other in parallel through the common
wiring line K. The same applies to the SBD arranged in parallel
with a single FET or a plurality of FETs in the same group.
[0077] The GaN substrate that has been described so far is a c face
({0001} face) substrate. In FIG. 11, the outlines of the FETs and
the SBDs are expressed in a hexagonal shape using an m face
({1-100} face), but the outlines thereof in an actual semiconductor
device may be a quadrilateral shape instead of the hexagonal shape.
By employing a hexagonal shape or a quadrilateral shape, the FETs
and the SBDs can be densely arranged in a plane without a gap.
[0078] In the semiconductor device of this embodiment, since the
FETs and the SBDs are located so as to be adjacent to each other,
heat generated at the FETs and the SBDs is easily conducted to the
adjacent region. Therefore, the temperature is not locally
increased, whereby the thermal resistance can be improved.
[0079] On the same GaN substrate 1, the SBDs function as protective
elements of the FETs against surge voltage or the like. The GaN
substrate 1 has an n.sup.+ conductivity type, and backside
electrodes such as the drain electrode D of the FET and the cathode
electrode C of the SBD are directly formed on the back of the GaN
substrate 1 through ohmic contact. Since an n.sup.--type GaN drift
layer 2 is directly formed on the GaN substrate, there is no need
to use a buffer layer or the like. Therefore, the production
process is simplified and thus the production time can be shortened
and the production yield can be improved. The n.sup.-GaN layer 2,
the p-type AlGaN layer 3, or the like formed on the GaN substrate 1
has good withstand voltage characteristics and low on-resistance.
By using a plurality of vertical elements, a large current can be
passed with a small size device. Moreover, significantly low
on-resistance can be achieved because of the two-dimensional
electron gas layer formed in the channel-forming layer 5.
[0080] Since the Schottky electrode A of the SBD is surrounded by
the p-type AlGaN layer 3 and is in contact with the p-type AlGaN
layer 3, the withstand voltage characteristics can be improved due
to the guard ring effect caused by the p-type AlGaN layer 3.
Fifth Embodiment
[0081] FIG. 13 is a plan view of a semiconductor device according
to a fifth embodiment of the present invention. In this embodiment,
a FET region including two or more FETs grouped together and an SBD
region including two or more SBDs grouped together are arranged on
a GaN substrate, the FET region and the SBD region having a
boundary therebetween. The FETs are connected to a corresponding
SBD or corresponding SBDs in parallel in an individual or grouped
manner. The anode A of the SBD and the source of the FET are formed
in a continuous manner unless otherwise specified.
[0082] Consequently, a simple wiring configuration can be achieved
while dealing with a large current. For example, in a device
including a plurality of FETs in order to treat a large current, by
arranging the group including a plurality of FETs and one or a
plurality of SBDs in a direction perpendicular to the direction of
the boundary (the upper electrodes (anode electrode and source
electrode) of the SBD and the FET disposed with the boundary
therebetween are electrically connected to each other), the current
path for the large current can be easily made by film formation and
thus the production process can be simplified.
[0083] Other advantages are the same as those in the fourth
embodiment.
Sixth Embodiment
[0084] FIG. 14 is a plan view of a semiconductor device according
to a sixth embodiment of the present invention. In this embodiment,
two or more FET regions including two or more FETs grouped together
and one or more SBD regions including two or more SBDs grouped
together are arranged on a GaN substrate so that one out of the two
or more FET regions and the one or more SBD regions is interposed
between the others. The FETs are connected to a corresponding SBD
or corresponding SBDs in parallel in an individual or grouped
manner.
[0085] According to the structure shown in FIG. 14, since the
grouping of the FETs and SBDs is easily performed, a plurality of
the same groups to be connected to each other in parallel can be
easily selected. Furthermore, in the same group, the sorting into
the in-phase subgroup in which On/Off operation is conducted in
phase can be easily performed. Therefore, the sorting of a current
path and a signal line for a large current that requires On/Off
operation performed on a plurality of FETs in phase can be achieved
with a simple structure.
[0086] In the semiconductor device of this embodiment, since the
FET regions and the SBD regions are located so as to be adjacent to
each other, heat generated at the FET regions and the SBD regions
is easily conducted to the adjacent region. Therefore, despite the
fact that a large current can be passed with a simple structure,
the temperature is not locally increased, whereby the thermal
resistance can be improved. Other advantages are the same as those
in the fourth embodiment.
Modification 1 of Sixth Embodiment
[0087] FIG. 15 shows a modification 1 of a sixth embodiment, which
is one of the embodiments of the present invention. The
semiconductor device shown in FIG. 15 can be regarded as a
modification of the sixth embodiment or a modification of the
fourth embodiment. In this semiconductor device, FETs are arranged
around one SBD. The SBD and the FETs are different from each other
in size, and the size of the SBD is larger than that of the
FETs.
[0088] According to the above-described structure, elements can be
arranged at the highest density, which is suitable to reduce the
area of a chip. Furthermore, since the FETs and the SBDs are
present in a mixed manner, heat generated from On-state elements is
easily diffused to Off-state elements. Thus, a sudden temperature
increase can be suppressed.
Modification 2 of Sixth Embodiment
[0089] FIG. 16 shows a modification 2 of the sixth embodiment,
which is one of the embodiments of the present invention. The
semiconductor device shown in FIG. 16 can also be regarded as a
modification of the sixth embodiment or a modification of the
fourth embodiment. In this semiconductor device, FETs are arranged
around one large SBD in a radial manner at angles of 60
degrees.
[0090] In the above-described structure, the size of a chip is
increased compared with the modification 1 shown in FIG. 15.
However, since the number of straight portions is increased (there
is almost no structure in which short straight portions are
continuously formed through bending portions), the production is
easily performed and the yield can be improved.
Modification 3 of Sixth Embodiment
[0091] FIG. 17 shows a modification 3 of the sixth embodiment,
which is one of the embodiments of the present invention. The
semiconductor device shown in FIG. 17 can be regarded as a
modification of the sixth embodiment or a modification of the
fourth or fifth embodiment. In this semiconductor device, the gate
electrodes G of the FET are arranged in a row so as to form a
finger-like shape and face in the same direction, and a large SBD
is disposed beside the gate electrodes G.
[0092] In the above-described structure, the wiring is easily
formed and thus the yield can be improved.
Modification 4 of Sixth Embodiment
[0093] FIG. 18 shows a modification 4 of the sixth embodiment,
which is one of the embodiments of the present invention. The
semiconductor device shown in FIG. 18 can be regarded as a
modification of the sixth embodiment or a modification of the
fourth or fifth embodiment. In this semiconductor device, minute
FETs are integrated and an SBD is disposed around the FETs.
[0094] In this structure, the FETs are arranged at a high density
and thus the area of a chip can be reduced. Furthermore, since the
FETs and the SBDs are separated from each other, the wiring is
easily formed and thus the yielding can be improved.
Seventh Embodiment
[0095] FIG. 19 is a plan view of a semiconductor device 10
according to a seventh embodiment of the present invention. This
semiconductor device is the same as those of the first to sixth
embodiments in that the semiconductor device includes an epitaxial
layered body of n.sup.--type GaN drift layer/p-type AlGaN
layer/n.sup.+-type GaN cap layer 4 formed on the n.sup.+-type GaN
substrate and a FET and an SBD are formed thereon. However, the
structures of the electrodes of the FET and the SBD are different.
The p-type AlGaN layer of the FET extends so as to serve as a guard
ring of a Schottky electrode of the SBD.
[0096] In the semiconductor device shown in FIG. 19, the openings
of the FET and the SBD are formed in a ridge shape. That is, a
groove is formed in the epitaxial layered body of n.sup.--type GaN
drift layer/p-type AlGaN layer/n.sup.+-type GaN cap layer 4 so as
to reach the n.sup.--type GaN drift layer. A channel of the FET is
formed on the inside surface of the ridge-shaped or groove-shaped
opening so as to be along the groove. In the SBD, an anode
electrode A that is in Schottky contact with the n.sup.--type GaN
drift layer extending at the bottom of the groove is formed so as
to be in parallel with the FET.
[0097] In the FET, the base portion of a gate electrode G and the
base portion of a source electrode S face each other, and a single
gate electrode G and two source electrodes S that sandwich the
single gate electrode G extend in a comb-shaped manner. The
comb-shaped electrodes extend in the direction of the ridge or the
groove. The anode electrode A of the SBD extends from the base
portion of the source electrode S in parallel with the source
electrode S. A drain electrode, which is a backside electrode of
the FET, and a cathode electrode of the SBD can be separated from
each other by forming a groove or a slit in accordance with the
output level.
[0098] The cross section of these comb-shaped electrodes has a
structure in which the semiconductor devices shown in FIG. 1 are
repeatedly arranged. The channel in the FET may have a HEMT
structure of iGaN/AlGaN or a MIS structure.
[0099] By densely arranging gate electrodes and upper electrodes of
the FET, a large current can be passed in the thickness direction
while high current density is maintained. Furthermore, since the
p-type AlGaN layer of the FET extends so as to be in contact with a
Schottky electrode of the SBD, a guard ring effect can be
produced.
Modification of Seventh Embodiment
[0100] FIG. 20 shows a modification of the seventh embodiment,
which is one of the embodiments of the present invention. In this
semiconductor device, the edge of a finger of a gate electrode is
rounded compared with the FET of the semiconductor device shown in
FIG. 19. In this structure, the surface area of a source electrode
S can be increased, whereby a larger current can be passed.
Eighth Embodiment
[0101] FIG. 21(a) is a diagram showing a semiconductor device 10
according to an eighth embodiment of the present invention. FIG.
21(b) is an electric circuit diagram. The semiconductor device
according to this embodiment constitutes an inverter that performs
power conversion between direct current and three-phase current. An
inverter 10 includes a first chip and a second chip b. The first
chip a and the second chip b include FETs and SBDs on respective
n.sup.+-type GaN substrates 1a and 1b, and a U phase, a V phase,
and a W phase each include one of the FETs and one of the SBDs. The
one FET and the one SBD in each of the phases correspond to those
in the semiconductor device 10 shown in FIG. 1. As shown in the
circuit diagram of FIG. 21(b), FETs/SBDs that cover a potential
higher than or equal to the output potential and correspond to the
U phase, V phase, and W phase are arranged on the first chip a and
FETs/SBDs that cover a potential lower than or equal to the output
potential and correspond to the U phase, V phase, and W phase are
arranged on the second chip b. As shown in FIG. 21(b), in each of
the phases, the source electrode S of the FET having a potential
lower than or equal to the output potential is electrically
connected to the drain electrode D of the FET in the same phase
having a potential higher than or equal to the output potential.
That is, in each of the phases, the backside electrode of the first
chip a is electrically connected to the upper electrode of the
second chip b as shown in FIG. 21(a).
[0102] According to the three-phase AC-DC inverter shown in FIG.
21, the on-resistance is low and thus a large current can be
passed. Furthermore, a small size device can be obtained due to its
simple structure. As a result, there can be provided a three-phase
AC-DC inverter that is produced at low cost and high production
yield and has low power consumption, a small size, and high
quality.
[0103] The embodiments of the present invention have been described
above, but the embodiments of the present invention disclosed above
are mere examples and the scope of the present invention is not
limited to these embodiments. The scope of the present invention is
defined by the appended claims, and all changes that fall within
the scope of the claims and the equivalence thereof are therefore
embraced by the claims.
INDUSTRIAL APPLICABILITY
[0104] According to the present invention, there can be provided an
inverter or the like that has low on-resistance, good withstand
voltage characteristics, and a small size due to its simple
structure and allows a large current to be passed. As a result,
there can be provided a semiconductor device, such as a three-phase
AC-DC inverter, that is produced at low cost and high production
yield and has low power consumption, a small size, and high
quality.
REFERENCE SIGNS LIST
[0105] 1 n.sup.+-type GaN substrate [0106] 1a, 1b n.sup.+-type GaN
substrate of chip [0107] 2 n.sup.--type GaN drift layer [0108] 3
p-type AlGaN layer [0109] 4 n+-type GaN cap layer [0110] 5
channel-forming layer (HEMT structure) [0111] 5a electron supply
layer [0112] 5b electron conduction layer [0113] 7 gate insulating
film [0114] 10 semiconductor device [0115] 13 iGaN region [0116] 14
groove [0117] 15 insulating layer [0118] 23 protective insulating
layer [0119] 31 interlayer insulating film [0120] 41 resist pattern
[0121] a, b chip [0122] A anode [0123] C cathode [0124] D drain
electrode [0125] G gate electrode [0126] H1 FET opening [0127] H2
SBD opening [0128] K common wiring line [0129] K1 wiring line
[0130] R1 first region (FET) [0131] R2 second region (SBD) [0132] S
source electrode
* * * * *