U.S. patent application number 13/943221 was filed with the patent office on 2013-11-14 for thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same.
The applicant listed for this patent is Yong-Sup Choi, Young-Mook Choi, Chang-Mog Jo, Hee-Cheol Kang, Jong-Heon Kim, Sang-Soo Kim. Invention is credited to Yong-Sup Choi, Young-Mook Choi, Chang-Mog Jo, Hee-Cheol Kang, Jong-Heon Kim, Sang-Soo Kim.
Application Number | 20130298829 13/943221 |
Document ID | / |
Family ID | 43221846 |
Filed Date | 2013-11-14 |
United States Patent
Application |
20130298829 |
Kind Code |
A1 |
Jo; Chang-Mog ; et
al. |
November 14, 2013 |
THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC
LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME
Abstract
A thin film deposition apparatus used to manufacture large
substrates on a mass scale and that allows high-definition
patterning, and a method of manufacturing an organic light-emitting
display apparatus using the same, the apparatus inclues a loading
unit fixing a substrate onto an electrostatic chuck; a deposition
unit including a chamber maintained in a vacuum state and a thin
film deposition assembly disposed in the chamber, separated from
the substrate by a predetermined distance, to deposit a thin film
on the substrate fixed on the electrostatic chuck; an unloading
unit separating the substrate on which a deposition process is
completed, from the electrostatic chuck; a first circulation unit
sequentially moving the electrostatic chuck on which the substrate
is fixed, to the loading unit, the deposition unit, and the
unloading unit; and a second circulation unit returning the
electrostatic chuck separated from the substrate to the loading
unit from the unloading unit, wherein the first circulation unit
passes through the chamber when passing through the deposition
unit.
Inventors: |
Jo; Chang-Mog; (Yongin-si,
KR) ; Kim; Jong-Heon; (Yongin-si, KR) ; Choi;
Yong-Sup; (Yongin-si, KR) ; Kim; Sang-Soo;
(Yongin-si, KR) ; Kang; Hee-Cheol; (Yongin-si,
KR) ; Choi; Young-Mook; (Yongin-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Jo; Chang-Mog
Kim; Jong-Heon
Choi; Yong-Sup
Kim; Sang-Soo
Kang; Hee-Cheol
Choi; Young-Mook |
Yongin-si
Yongin-si
Yongin-si
Yongin-si
Yongin-si
Yongin-si |
|
KR
KR
KR
KR
KR
KR |
|
|
Family ID: |
43221846 |
Appl. No.: |
13/943221 |
Filed: |
July 16, 2013 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
12869830 |
Aug 27, 2010 |
|
|
|
13943221 |
|
|
|
|
Current U.S.
Class: |
118/713 ;
118/720; 118/728 |
Current CPC
Class: |
C23C 14/243 20130101;
H01L 21/67173 20130101; H01L 21/67225 20130101; H01L 33/005
20130101; C23C 14/568 20130101; H01L 21/67236 20130101; C23C 14/12
20130101; C23C 14/246 20130101; C23C 14/042 20130101; H01L 51/001
20130101; H01L 21/6831 20130101; H01L 51/0011 20130101; H01L
27/3211 20130101; H01L 51/56 20130101 |
Class at
Publication: |
118/713 ;
118/728; 118/720 |
International
Class: |
H01L 33/00 20060101
H01L033/00 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 27, 2009 |
KR |
10-2009-0079765 |
Feb 8, 2010 |
KR |
10-2010-0011480 |
Claims
1. A thin film deposition apparatus comprising: a loading unit
fixing a substrate that is a deposition target, onto an
electrostatic chuck; a deposition unit comprising a chamber
maintained in a vacuum state and a thin film deposition assembly
disposed in the chamber, separated from the substrate by a
predetermined distance, to deposit a thin film on the substrate
fixed on the electrostatic chuck; an unloading unit separating the
substrate on which a deposition process is completed, from the
electrostatic chuck; a first circulation unit sequentially moving
the electrostatic chuck on which the substrate is fixed, to the
loading unit, the deposition unit, and the unloading unit; and a
second circulation unit returning the electrostatic chuck separated
from the substrate to the loading unit from the unloading unit,
wherein the first circulation unit is disposed to pass through the
chamber when passing through the deposition unit.
2. The thin film deposition apparatus of claim 1, wherein a
plurality of the thin film deposition assemblies are disposed in
the chamber.
3. The thin film deposition apparatus of claim 1, wherein the
chamber comprises a first chamber and a second chamber each
comprising a plurality of thin film deposition assemblies, and the
first chamber and the second chamber are connected to each
other.
4. The thin film deposition apparatus of claim 1, wherein the first
circulation unit or the second circulation unit comprises a carrier
that allows the electrostatic chuck to be moved.
5. The thin film deposition apparatus of claim 4, wherein the
carrier comprises: a support installed to pass through the chamber
and comprising a first support and a second support each extending
along the first circulation unit or the second circulation unit; a
moving bar disposed on the first support, to support edges of the
electrostatic chuck; and a first driving unit interposed between
the first support and the moving bar, to allow the moving bar to be
moved along the first support.
6. The thin film deposition apparatus of claim 1, wherein the thin
film deposition assembly comprises: a deposition source that
discharges a deposition material; a deposition source nozzle unit
that is disposed at a side of the deposition source and comprises a
plurality of deposition source nozzles arranged in a first
direction; and a patterning slit sheet that is disposed opposite to
the deposition source nozzle unit and comprises a plurality of
patterning slits arranged in a second direction perpendicular to
the first direction, wherein the deposition process is performed
while the substrate is moved relative to the thin film deposition
assembly in the first direction, and the deposition source, the
deposition source nozzle unit, and the patterning slit sheet are
integrally formed as one body.
7. The thin film deposition apparatus of claim 6, wherein the
deposition source and the deposition source nozzle unit, and the
patterning slit sheet are integrally connected as one body by a
connection member that guides flow of the deposition material.
8. The thin film deposition apparatus of claim 7, wherein the
connection member seals a space between the deposition source and
the deposition source nozzle unit, and the patterning slit
sheet.
9. The thin film deposition apparatus of claim 6, wherein the
plurality of deposition source nozzles are tilted at a
predetermined angle.
10. The thin film deposition apparatus of claim 9, wherein the
plurality of deposition source nozzles comprise deposition source
nozzles arranged in two rows formed in the first direction, and the
deposition source nozzles in the two rows are tilted to face each
other.
11. The thin film deposition apparatus of claim 9, wherein the
plurality of deposition source nozzles comprise deposition source
nozzles arranged in two rows formed in the first direction, the
deposition source nozzles of a row located at a first side of the
patterning slit sheet are arranged to face a second side of the
patterning slit sheet, and the deposition source nozzles of the
other row located at the second side of the patterning slit sheet
are arranged to face the first side of the patterning slit
sheet.
12. The thin film deposition apparatus of claim 6, wherein the
patterning slit sheet comprises a first mark, and the substrate
comprises a second mark, and the thin film deposition assembly
comprises a camera assembly to determine a degree of alignment of
the first mark and the second mark, wherein the camera assembly
comprises: a hood having an opening formed in one end of the hood;
a camera installed in the hood; an optical system disposed between
the camera and the opening; a protection window disposed between
the optical system and the opening; and a heater disposed on the
protection window.
13. The thin film deposition apparatus of claim 6, wherein the
patterning slit sheet comprises a first mark, and the substrate
comprises a second mark, and the thin film deposition assembly
further comprises a camera assembly to determine a degree of
alignment of the first mark and the second mark, and a driving unit
to drive the thin film deposition assembly so as to align the first
mark with the second mark by using information about a degree of
alignment of the first mark and the second mark obtained by the
camera assembly.
14. The thin film deposition apparatus of claim 6, further
comprising: a source chamber which is connected to the chamber and
in which the deposition source of the thin film deposition assembly
is accommodated; a valve opening or closing a space between the
chamber and the source chamber; and a shutter closing the space
between the chamber and the source chamber when the deposition
source is located at the chamber.
15. The thin film deposition apparatus of claim 14, wherein the
source chamber comprises a stage and bellows, which move the
deposition source between the source chamber and the chamber.
16. The thin film deposition apparatus of claim 1, wherein the thin
film deposition assembly comprises: a deposition source that
discharges a deposition material; a deposition source nozzle unit
that is disposed at a side of the deposition source and comprises a
plurality of deposition source nozzles arranged in a first
direction; a patterning slit sheet that is disposed opposite to the
deposition source nozzle unit and comprises a plurality of
patterning slits arranged in the first direction; and a barrier
wall assembly that is disposed between the deposition source nozzle
unit and the patterning slit sheet in the first direction, and
comprises a plurality of barrier walls that partition a space
between the deposition source nozzle unit and the patterning slit
sheet into a plurality of sub-deposition spaces, wherein the thin
film deposition assembly is disposed to be separated from the
substrate, and the thin film deposition assembly or the substrate
is moved relative to the other.
17. The thin film deposition apparatus of claim 16, wherein each of
the plurality of barrier walls extends in a second direction that
is substantially perpendicular to the first direction.
18. The thin film deposition apparatus of claim 16, wherein the
barrier wall assembly comprises a first barrier wall assembly
comprising a plurality of first barrier walls, and a second barrier
wall assembly comprising a plurality of second barrier walls.
19. The thin film deposition apparatus of claim 18, wherein each of
the first barrier walls and each of the second barrier walls extend
in a second direction that is substantially perpendicular to the
first direction.
20. The thin film deposition apparatus of claim 19, wherein the
first barrier walls are arranged to respectively correspond to the
second barrier walls.
21. The thin film deposition apparatus of claim 16, wherein the
deposition source and the barrier wall assembly are separated from
each other.
22. The thin film deposition apparatus of claim 16, wherein the
barrier wall assembly and the patterning slit sheet are separated
from each other.
23. The thin film deposition apparatus of claim 16, wherein the
patterning slit sheet comprises a first mark, and the substrate
comprises a second mark, and the thin film deposition assembly
comprises a camera assembly to determine a degree of alignment of
the first mark and the second mark, wherein the camera assembly
comprises: a hood having an opening formed in one end of the hood;
a camera installed in the hood; an optical system disposed between
the camera and the opening; a protection window disposed between
the optical system and the opening; and a heater disposed on the
protection window.
24. The thin film deposition apparatus of claim 16, wherein the
patterning slit sheet comprises a first mark, and the substrate
comprises a second mark, and the thin film deposition assembly
further comprises a camera assembly to capture a degree of
alignment of the first mark and the second mark, and a driving unit
to drive the thin film deposition assembly so as to align the first
mark with the second mark by using information about a degree of
alignment of the first mark and the second mark obtained by the
camera assembly.
25. The thin film deposition apparatus of claim 16, further
comprising: a source chamber which is connected to the chamber and
in which the deposition source of the thin film deposition assembly
is accommodated; a valve opening or closing a space between the
chamber and the source chamber; and a shutter closing the space
between the chamber and the source chamber when the deposition
source is located in the chamber.
26. The thin film deposition apparatus of claim 25, wherein the
source chamber comprises a stage and bellows, which move the
deposition source between the source chamber and the chamber.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application
Ser. No. 12/869,830, filed Aug. 27, 2010, which claims priority to
and the benefit of Korean Patent Application Nos. 10-2009-0079765,
filed on Aug. 27, 2009, and 10-2010-0011480, filed on Feb. 8, 2010,
the entire content of which is incorporated herein by
reference.
BACKGROUND
[0002] 1. Field
[0003] An aspect of the present invention relates to a thin film
deposition apparatus and a method of manufacturing an organic
light-emitting display apparatus by using the same, and more
particularly, to a thin film deposition apparatus that can be
easily used to manufacture large substrates on a mass scale and
that improves manufacturing yield, and a method of manufacturing an
organic light-emitting display apparatus by using the thin film
deposition apparatus.
[0004] 2. Description of the Related Art
[0005] Organic light-emitting display apparatuses have a larger
viewing angle, better contrast characteristics, and a faster
response rate than other display apparatuses, and thus have drawn
attention as next-generation display apparatuses.
[0006] An organic light-emitting display apparatus includes
intermediate layers, including an emission layer disposed between a
first electrode and a second electrode that are arranged opposite
to each other. The electrodes and the intermediate layers may be
formed using a variety of methods, one of which is a deposition
method. When an organic light-emitting display apparatus is
manufactured by using the deposition method, a fine metal mask
(FMM) having the same pattern as a thin film to be formed is
disposed in close contact with a substrate, and a thin film
material is deposited over the FMM in order to form the thin film
having the desired pattern.
[0007] However, when the FMM is used, it is not easy to form an
organic thin film pattern on a large substrate, such as a mother
glass having a large size. In other words, when the large-sized
mask is used, the mask may be bent due to self-gravity, and the
organic thin film pattern may be distorted due to the bent mask.
This is not desirable for high definition patterning which is being
increasingly used recently.
SUMMARY
[0008] An aspect of the present invention provides a thin film
deposition apparatus that may be easily manufactured, that may be
easily used to manufacture large-sized display apparatuses on a
mass scale and that allows high-definition patterning, and a method
of manufacturing an organic light-emitting display apparatus by
using the thin film deposition apparatus.
[0009] According to an aspect of the present invention, there is
provided a thin film deposition apparatus including: a loading unit
fixing a substrate that is a deposition target, onto an
electrostatic chuck; a deposition unit including a chamber
maintained in a vacuum state and a thin film deposition assembly
disposed in the chamber, separated from the substrate by a
predetermined distance, for depositing a thin film on the substrate
fixed on the electrostatic chuck; an unloading unit separating the
substrate on which a deposition process is completed, from the
electrostatic chuck; a first circulation unit sequentially moving
the electrostatic chuck on which the substrate is fixed, to the
loading unit, the deposition unit, and the unloading unit; and a
second circulation unit returning the electrostatic chuck separated
from the substrate to the loading unit from the unloading unit,
wherein the first circulation unit is disposed to pass through the
chamber when passing through the deposition unit.
[0010] According to another aspect of the present invention, a
plurality of thin film deposition assemblies may be disposed in the
chamber.
[0011] According to another aspect of the present invention, the
chamber may include a first chamber and a second chamber each
including a plurality of thin film deposition assemblies, and the
first chamber and the second chamber may be connected to each
other.
[0012] According to another aspect of the present invention, the
first circulation unit or the second circulation unit may include a
carrier that allows the electrostatic chuck to be moved.
[0013] According to another aspect of the present invention, the
carrier may include: a support installed to pass through the
chamber and including a first support and a second support each
extending along the first circulation unit or the second
circulation unit; a moving bar disposed on the first support, to
support edges of the electrostatic chuck; and a first driving unit
interposed between the first support and the moving bar, to allow
the moving bar to be moved along the first support.
[0014] According to another aspect of the present invention, the
thin film deposition assembly may include: a deposition source that
discharges a deposition material; a deposition source nozzle unit
that is disposed at a side of the deposition source and includes a
plurality of deposition source nozzles arranged in a first
direction; and a patterning slit sheet that is disposed opposite to
the deposition source nozzle unit and includes a plurality of
patterning slits arranged in a second direction perpendicular to
the first direction, and wherein a deposition process is performed
while the substrate is moved relative to the thin film deposition
assembly in the first direction, and the deposition source, the
deposition source nozzle unit, and the patterning slit sheet are
integrally formed as one body.
[0015] According to another aspect of the present invention, the
deposition source and the deposition source nozzle unit, and the
patterning slit sheet may be integrally connected as one body by a
connection member that guides flow of the deposition material.
[0016] According to another aspect of the present invention, the
connection member may seal a space between the deposition source
and the deposition source nozzle unit, and the patterning slit
sheet.
[0017] According to another aspect of the present invention, the
plurality of deposition source nozzles may be tilted at a
predetermined angle.
[0018] According to another aspect of the present invention, the
plurality of deposition source nozzles may include deposition
source nozzles arranged in two rows formed in the first direction,
and the deposition source nozzles in the two rows are tilted to
face each other.
[0019] According to another aspect of the present invention, the
plurality of deposition source nozzles may include deposition
source nozzles arranged in two rows formed in the first direction,
the deposition source nozzles of a row located at a first side of
the patterning slit sheet are arranged to face a second side of the
patterning slit sheet, and the deposition source nozzles of the
other row located at the second side of the patterning slit sheet
are arranged to face the first side of the patterning slit
sheet.
[0020] According to another aspect of the present invention, the
thin film deposition assembly may include: a deposition source that
discharges a deposition material; a deposition source nozzle unit
that is disposed at a side of the deposition source and includes a
plurality of deposition source nozzles arranged in a first
direction; a patterning slit sheet that is disposed opposite to the
deposition source nozzle unit and includes a plurality of
patterning slits arranged in the first direction; and a barrier
wall assembly that is disposed between the deposition source nozzle
unit and the patterning slit sheet in the first direction, and
includes a plurality of barrier walls that partition a space
between the deposition source nozzle unit and the patterning slit
sheet into a plurality of sub-deposition spaces, and wherein the
thin film deposition assembly is disposed to be separated from the
substrate, and the thin film deposition assembly or the substrate
is moved relative to the other.
[0021] According to another aspect of the present invention, each
of the plurality of barrier walls may extend in a second direction
that is substantially perpendicular to the first direction.
[0022] According to another aspect of the present invention, the
barrier wall assembly may include a first barrier wall assembly
including a plurality of first barrier walls, and a second barrier
wall assembly including a plurality of second barrier walls.
[0023] According to another aspect of the present invention, each
of the first barrier walls and each of the second barrier walls may
extend in a second direction that is substantially perpendicular to
the first direction.
[0024] According to another aspect of the present invention, the
first barrier walls may be arranged to respectively correspond to
the second barrier walls.
[0025] According to another aspect of the present invention, the
deposition source and the barrier wall assembly may be separated
from each other.
[0026] According to another aspect of the present invention, the
barrier wall assembly and the patterning slit sheet may be
separated from each other.
[0027] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may include a camera assembly for capturing a degree of
alignment of the first mark and the second mark, and wherein the
camera assembly includes: a hood having an opening formed in one
end of the hood; a camera installed in the hood; an optical system
disposed between the camera and the opening; a protection window
disposed between the optical system and the opening; and a heater
disposed on the protection window.
[0028] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may further include a camera assembly for capturing a
degree of alignment of the first mark and the second mark, and a
second driving unit for driving the thin film deposition assembly
so as to align the first mark with the second mark by using
information about the degree of alignment of the first mark and the
second mark obtained by the camera assembly.
[0029] The thin film deposition apparatus may further include: a
source chamber which is connected to the chamber and in which the
deposition source of the thin film deposition assembly is
accommodated; a valve opening or closing a space between the
chamber and the source chamber; and a shutter closing the space
between the chamber and the source chamber when the deposition
source is located at the chamber.
[0030] The patterning slit sheet may further include a first mark,
and the substrate may include a second mark, and the thin film
deposition assembly may include a camera assembly for capturing a
degree of alignment of the first mark and the second mark, and
wherein the camera assembly includes: a hood having an opening
formed in one end of the hood; a camera installed in the hood; an
optical system disposed between the camera and the opening; a
protection window disposed between the optical system and the
opening; and a heater disposed on the protection window.
[0031] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may further include a camera assembly for capturing a
degree of alignment of the first mark and the second mark, and a
second driving unit for driving the thin film deposition assembly
so as to align the first mark with the second mark by using
information about the degree of alignment of the first mark and the
second mark obtained by the camera assembly.
[0032] The thin film deposition apparatus may further include: a
source chamber which is connected to the chamber and in which the
deposition source of the thin film deposition assembly is
accommodated; a valve opening or closing a space between the
chamber and the source chamber; and a shutter closing the space
between the chamber and the source chamber when the deposition
source is located at the chamber.
[0033] According to another aspect of the present invention, there
is provided a method of manufacturing an organic light-emitting
display apparatus, the method including: fixing a substrate that is
a deposition target, on an electrostatic chuck; conveying the
electrostatic chuck on which the substrate is fixed, into a chamber
that is maintained in a vacuum state by using a first circulation
unit installed to pass through the chamber; using a thin film
deposition assembly disposed in the chamber and depositing an
organic layer on the substrate by moving the substrate or the thin
film deposition assembly relative to the other; removing the
substrate on which the deposition process is completed, from the
chamber by using the first circulation unit; separating the
substrate on which the deposition process is completed, from the
electrostatic chuck; and fixing the substrate on the electrostatic
chuck separated from the substrate by using a second circulation
unit installed outside the chamber.
[0034] According to another aspect of the present invention, a
plurality of thin film deposition assemblies may be disposed in the
chamber so that a deposition process is continuously performed on
the substrate by using each of the thin film deposition
assemblies.
[0035] According to another aspect of the present invention, a
plurality of thin film deposition assemblies may be disposed in the
chamber, and the chamber may include a first chamber and a second
chamber connected to each other so that a deposition process is
continuously performed on the substrate while the substrate is
moved relative to the thin film deposition assembly in the first
and second chambers.
[0036] The thin film deposition assembly may include: a deposition
source that discharges a deposition material; a deposition source
nozzle unit that is disposed at a side of the deposition source and
includes a plurality of deposition source nozzles arranged in a
first direction; and a patterning slit sheet that is disposed
opposite to the deposition source nozzle unit and includes a
plurality of patterning slits arranged in a second direction that
is perpendicular to the first direction, wherein the deposition
source, the deposition source nozzle unit, and the patterning slit
sheet are integrally formed as one body, and the thin film
deposition assembly is disposed to be separated from the substrate
so that a deposition process is performed on the substrate while
the substrate is moved relative to the thin film deposition
assembly in the first direction.
[0037] The thin film deposition assembly may include: a deposition
source that discharges a deposition material; a deposition source
nozzle unit that is disposed at a side of the deposition source and
includes a plurality of deposition source nozzles arranged in a
first direction; a patterning slit sheet that is disposed opposite
to the deposition source nozzle unit and includes a plurality of
patterning slits arranged in the first direction; and a barrier
wall assembly that is disposed between the deposition source nozzle
unit and the patterning slit sheet in the first direction, and
includes a plurality of barrier walls that partition a space
between the deposition source nozzle unit and the patterning slit
sheet into a plurality of sub-deposition spaces, and wherein the
thin film deposition assembly is disposed to be separated from the
substrate so that a deposition process is performed on the
substrate while the thin film deposition assembly or the substrate
is moved relative to the other.
[0038] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may include a camera assembly for capturing a degree of
alignment of the first mark and the second mark, and wherein the
camera assembly includes: a hood having an opening formed in one
end of the hood; a camera installed in the hood; an optical system
disposed between the camera and the opening; a protection window
disposed between the optical system and the opening; and a heater
disposed on the protection window, and wherein the degree of
alignment of the first mark and the second mark is detected while
the deposition process is performed.
[0039] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may be driven while the deposition process is performed,
so that the first mark and the second mark are aligned with each
other.
[0040] According to another aspect of the present invention, a thin
film deposition apparatus may include: a source chamber which is
connected to the chamber and in which the deposition source of the
thin film deposition assembly is accommodated; a valve opening or
closing a space between the chamber and the source chamber; and a
shutter closing the space between the chamber and the source
chamber when the deposition source is located at the chamber, and
the method further including: conveying the deposition source to
the source chamber after the deposition process on the substrate is
completed; closing the space between the chamber and the source
chamber by using the valve; and replacing the deposition
source.
[0041] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may include a camera assembly for capturing a degree of
alignment of the first mark and the second mark, and wherein the
camera assembly includes: a hood having an opening formed in one
end of the hood; a camera installed in the hood; an optical system
disposed between the camera and the opening; a protection window
disposed between the optical system and the opening; and a heater
disposed on the protection window, and wherein the degree of
alignment of the first mark and the second mark is detected while
the deposition process is performed.
[0042] The patterning slit sheet may include a first mark, and the
substrate may include a second mark, and the thin film deposition
assembly may be driven while the deposition process is performed,
so that the first mark and the second mark are aligned with each
other.
[0043] According to another aspect of the present invention, a thin
film deposition apparatus may include: a source chamber which is
connected to the chamber and in which the deposition source of the
thin film deposition assembly is accommodated; a valve opening or
closing a space between the chamber and the source chamber; and a
shutter closing the space between the chamber and the source
chamber when the deposition source is located at the chamber, and
the method further including: conveying the deposition source to
the source chamber after the deposition process on the substrate is
completed; closing the space between the chamber and the source
chamber by using the valve; and replacing the deposition
source.
[0044] Additional aspects and/or advantages of the invention will
be set forth in part in the description which follows and, in part,
will be obvious from the description, or may be learned by practice
of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0045] These and/or other aspects and advantages of the invention
will become apparent and more readily appreciated from the
following description of the embodiments, taken in conjunction with
the accompanying drawings of which:
[0046] FIG. 1 is a schematic view of a thin film deposition
apparatus according to an embodiment of the present invention;
[0047] FIG. 2 illustrates a modified example of the thin film
deposition apparatus of FIG. 1;
[0048] FIG. 3 is a schematic view of an electrostatic chuck,
according to an embodiment of the present invention;
[0049] FIG. 4 is a cross-sectional view of a first circulation unit
of the thin film deposition apparatus of FIG. 1;
[0050] FIG. 5 is a cross-sectional view of a second circulation
unit of the thin film deposition apparatus of FIG. 1;
[0051] FIG. 6 is a perspective view of a thin film deposition
assembly according to an embodiment of the present invention;
[0052] FIG. 7 is a schematic cross-sectional side view of the thin
film deposition assembly of FIG. 6, according to an embodiment of
the present invention;
[0053] FIG. 8 is a schematic plan view of the thin film deposition
assembly of FIG. 6, according to an embodiment of the present
invention;
[0054] FIG. 9 is a perspective view of a thin film deposition
assembly according to another embodiment of the present
invention;
[0055] FIG. 10 is a perspective view of a thin film deposition
assembly according to another embodiment of the present
invention;
[0056] FIG. 11 is a perspective view of a thin film deposition
assembly according to another embodiment of the present
invention;
[0057] FIG. 12 is a schematic cross-sectional side view of the thin
film deposition assembly of FIG. 11, according to an embodiment of
the present invention;
[0058] FIG. 13 is a schematic plan view of the thin film deposition
assembly of FIG. 11, according to an embodiment of the present
invention;
[0059] FIGS. 14A and 14B are cross-sectional views of a source
chamber, according to an embodiment of the present invention;
[0060] FIG. 15 is a cross-sectional view of a camera assembly,
according to an embodiment of the present invention;
[0061] FIG. 16 is a perspective view of a thin film deposition
assembly according to another embodiment of the present invention;
and
[0062] FIG. 17 is a cross-sectional view of an organic
light-emitting display apparatus manufactured by using a thin film
deposition apparatus, according to an embodiment of the present
invention.
DETAILED DESCRIPTION
[0063] Reference will now be made in detail to the present
embodiments of the present invention, examples of which are
illustrated in the accompanying drawings, wherein like reference
numerals refer to the like elements throughout. The embodiments are
described below in order to explain the present invention by
referring to the figures.
[0064] The present invention will now be described more fully with
reference to the accompanying drawings, in which exemplary
embodiments of the invention are shown.
[0065] Here, when a first element is described as being coupled to
a second element, the first element may be not be only directly
coupled to the second element but may also be indirectly coupled to
the second element via a third element. Moreover, it is to be
understood that where is stated herein that one film or layer is
"formed on" or "disposed on" a second layer or film, the first
layer or film may be formed or disposed directly on the second
layer or film or there may be intervening layers or films between
the first layer or film and the second layer or film. Further, as
used herein, the term "formed on" is used with the same meaning as
"located on" or "disposed on" and is not meant to be limiting
regarding any particular fabrication process.
[0066] FIG. 1 is a schematic view of a thin film deposition
apparatus according to an embodiment of the present invention, and
FIG. 2 illustrates a modified example of the thin film deposition
apparatus of FIG. 1. FIG. 3 is a schematic view of an electrostatic
chuck 600, according to an embodiment of the present invention.
[0067] Referring to FIG. 1, the thin film deposition apparatus
according to an embodiment of the present invention includes a
loading unit 710, a deposition unit 730, an unloading unit 720, a
first circulation unit 610, and a second circulation unit 620.
[0068] The loading unit 710 may include a first rack 712, a
transport robot 714, a transport chamber 716, and a first inversion
chamber 718.
[0069] A plurality of substrates 500 on which deposition is not
performed, are stacked on the first rack 712, and the transport
robot 714 picks up the substrates 500 from the first rack 712,
places the substrates 500 on the electrostatic chuck 600 conveyed
from the second circulation unit 620 and then conveys the
electrostatic chuck 600 on which the substrates 500 are placed, to
the transport chamber 716.
[0070] The first inversion chamber 718 is disposed adjacent to the
transport chamber 716, and a first inversion robot 719 located at
the first inversion chamber 718 inverts the electrostatic chuck 600
to bar the electrostatic chuck 600 on the first circulation unit
610 of the deposition unit 730.
[0071] As illustrated in FIG. 3, the electrostatic chuck 600
includes an electrode 602 embedded in a main body 601 formed of
dielectric material, wherein the electrode 602 is supplied with
power. Such an electrostatic chuck may fix the substrates 500 on a
surface of the main body 601 as a high voltage is applied to the
electrode 602.
[0072] Referring to FIG. 1, the transport robot 714 places the
substrates 500 on a top surface of the electrostatic chuck 600. In
this state, the electrostatic chuck 600 is conveyed to the
transport chamber 716. As the first inversion robot 719 inverts the
electrostatic chuck 600, the substrates 500 are directed downwards
in the deposition unit 730.
[0073] The unloading unit 720 is constituted to operate in an
opposite manner to the loading unit 710 described above. In other
words, the substrates 500 and the electrostatic chuck 600 that pass
through the deposition unit 730 are inverted by a second inversion
robot 729 in a second inversion chamber 728 and are conveyed to an
ejection chamber 726, and an ejection robot 724 takes the
substrates 500 and the electrostatic chuck 600 out of the ejection
chamber 726 and then separates the substrates 500 from the
electrostatic chuck 600 to place or stack the substrates 500 on a
second rack 722. The electrostatic chuck 600 which is separated
from the substrates 500 is returned to the loading unit 710 via the
second circulation unit 620.
[0074] However, aspects of the present invention are not limited
thereto. The substrates 500 may be fixed on a bottom surface of the
electrostatic chuck 600 from when the substrates 500 are initially
fixed on the electrostatic chuck 600, and the electrostatic chuck
600 may be conveyed to the deposition unit 730. In this regard, the
first inversion chamber 718, the first inversion robot 719, the
second inversion chamber 728, and the second inversion robot 729
are not necessary.
[0075] The deposition unit 730 includes at least one deposition
chamber. According to the embodiment of FIG. 1, the deposition unit
730 may include a first chamber 731, and a plurality of thin film
deposition assemblies 100, 200, 300, and 400 are disposed in the
first chamber 731. According to the embodiment of FIG. 1, four thin
film deposition assemblies including a first thin film deposition
assembly 100, a second thin film deposition assembly 200, a third
thin film deposition assembly 300, and a fourth thin film
deposition assembly 400 are installed in the first chamber 731.
However, the number of thin film deposition assemblies to be
installed in the first chamber 731 may vary according to a
deposition material and a deposition condition. The first chamber
731 has an appropriate degree of vacuum maintained therein when
deposition is performed.
[0076] Also, according to another embodiment of the present
invention as illustrated in FIG. 2, the deposition unit 730
includes the first chamber 731 and the second chamber 732 connected
to each other, and the first and second thin film deposition
assemblies 100 and 200 may be disposed in the first chamber 731,
and the third and fourth thin film deposition assemblies 300 and
400 may be disposed in the second chamber 732. Of course, the
number of chambers is not limited thereto and may be increased.
[0077] According to the embodiment of FIG. 1, the electrostatic
chuck 600, on which the substrates 500 are disposed, is moved to at
least the deposition unit 730 by the first circulation unit 610 and
may be sequentially moved to the loading unit 710, the deposition
unit 730, and the unloading unit 720. The electrostatic chuck 600
separated from the substrates 500 in the unloading unit 720 is
returned to the loading unit 710 by the second circulation unit
620.
[0078] The first circulation unit 610 is disposed to pass through
the first chamber 731 when passing through the deposition unit 730,
and the second circulation unit 620 allows the electrostatic chuck
600 to be conveyed to the loading unit 710.
[0079] FIG. 4 is a cross-sectional view of the first circulation
unit 610 of the thin film deposition apparatus of FIG. 1.
[0080] The first circulation unit 610 includes a first carrier 611
that allows the electrostatic chuck 600 on which the substrates 500
are disposed, to be moved.
[0081] The first carrier 611 includes a first support 613, a second
support 614, a moving bar 615, and a first driving unit 616.
[0082] The first support 613 and the second support 614 are
installed to pass through a chamber of the deposition unit 730, for
example, in the embodiment of FIG. 1, the first chamber 731, and in
the embodiment of FIG. 2, the first chamber 731 and the second
chamber 732.
[0083] The first support 613 is disposed vertically in the first
chamber 731, and the second support 614 is horizontally disposed
below the first support 613 in the first chamber 731. As
illustrated in FIG. 4, the first support 613 and the second support
614 are disposed perpendicular to each other forming a bent
structure. However, aspects of the present invention are not
limited thereto. The first support 613 may be disposed above the
second support 614, and the second support 614 may be disposed
below the first support 613.
[0084] The moving bar 615 is movable along the first support 613.
At least one end of the moving bar 615 is supported by the first
support 613, and the other end of the moving bar 615 is formed to
be supported by edges of the electrostatic chuck 600. The
electrostatic chuck 600 may be fixedly supported on the moving bar
615 and may be moved along the first support 613 due to the moving
bar 615. A portion of the moving bar 615 that supports the
electrostatic chuck 600 may be bent toward a thin film deposition
assembly 100 and may allow the substrates 500 to be close to the
thin film deposition assembly 100.
[0085] The first driving unit 616 is interposed between the moving
bar 615 and the first support 613. The first driving unit 616 may
include a roller 617 that may be rolled along the first support
613. The first driving unit 616 allows the moving bar 615 to be
moved along the first support 613 and may provide a driving power
or may transfer a driving power generated by an additional driving
source to the moving bar 615. The first driving unit 616 may be any
driving device that allows the moving bar 615 to be moved, as well
as the roller 617.
[0086] FIG. 5 is a cross-sectional view of the second circulation
unit 620 of the thin film deposition apparatus of FIG. 1.
[0087] The second circulation unit 620 includes a second carrier
621 that allows the electrostatic chuck 600 that is separated from
the substrates 500 to be moved.
[0088] The second carrier 621 includes a third support 623, the
moving bar 615, and the first driving unit 616.
[0089] The third support 623 extends to the same length as an
extended length of the first support 613 of the first carrier 611.
The moving bar 615 on which the first driving unit 616 is disposed
is supported by the third support 623, and the electrostatic chuck
600 that is separated from the substrates 500 is mounted on the
moving bar 615. Structures of the moving bar 615 and the first
driving unit 616 are as described above.
[0090] Next, the thin film deposition assembly 100 disposed in the
first chamber 731 will be described. FIG. 6 is a perspective view
of the thin film deposition assembly 100 according to an embodiment
of the present invention, FIG. 7 is a schematic cross-sectional
side view of the thin film deposition assembly 100 of FIG. 6,
according to an embodiment of the present invention, and FIG. 8 is
a schematic plan view of the thin film deposition assembly 100 of
FIG. 6, according to an embodiment of the present invention.
[0091] Referring to FIGS. 6 through 8, the thin film deposition
assembly 100 includes a deposition source 110, a deposition source
nozzle unit 120, and a patterning slit sheet 150.
[0092] In particular, in order to deposit a deposition material 115
emitted from the deposition source 110 and discharged through the
deposition source nozzle unit 120 and the patterning slit sheet
150, onto a substrate 500 in a desired pattern, the first chamber
731 should be maintained in a high-vacuum state as in a deposition
method using a fine metal mask (FMM). In addition, the temperature
of the patterning slit sheet 150 should be sufficiently lower than
the temperature of the deposition source 110. In this regard, the
temperature of the patterning slit sheet 150 may be about
100.degree. C. or less. The temperature of the patterning slit
sheet 150 should be sufficiently low so as to reduce thermal
expansion of the patterning slit sheet 150.
[0093] The substrate 500, which constitutes a deposition target on
which the deposition material 115 is to be deposited, is disposed
in the first chamber 731. The substrate 500 may be a substrate for
flat panel displays. A large substrate, such as a mother glass, for
manufacturing a plurality of flat panel displays, may be used as
the substrate 500. Other substrates may also be employed.
[0094] Deposition may be performed while the substrate 500 or the
thin film deposition assembly 100 is moved relative to the
other.
[0095] In particular, in the conventional FMM deposition method,
the size of the FMM has to be equal to the size of a substrate.
Thus, the size of the FMM has to be increased as the substrate
becomes larger. However, it is neither simple to manufacture a
large FMM nor to extend an FMM to be accurately aligned with a
pattern.
[0096] In order to overcome this problem, in the thin film
deposition assembly 100 according to an embodiment of the present
invention, deposition may be performed while the thin film
deposition assembly 100 or the substrate 500 is moved relative to
the other. In other words, deposition may be continuously performed
while the substrate 500, which is disposed to face the thin film
deposition assembly 100, is moved in a Y-axis direction. In other
words, deposition is performed in a scanning manner while the
substrate 500 is moved in a direction of arrow A in FIG. 6.
[0097] In the thin film deposition assembly 100, the patterning
slit sheet 150 may be significantly smaller than an FMM used in a
conventional deposition method. In other words, in the thin film
deposition assembly 100, deposition is continuously performed,
i.e., in a scanning manner while the substrate 500 is moved in the
Y-axis direction. Thus, lengths of the patterning slit sheet 150 in
the X-axis and Y-axis directions may be significantly less than the
lengths of the substrate 500 in the X-axis and Y-axis directions.
As described above, since the patterning slit sheet 150 may be
formed to be significantly smaller than an FMM used in the
conventional deposition method, it is relatively easy to
manufacture the patterning slit sheet 150 used in the aspects of
the present invention. In other words, using the patterning slit
sheet 150, which is smaller than an FMM used in the conventional
deposition method, is more convenient in all processes, including
etching and other subsequent processes, such as precise extension,
welding, moving, and cleaning processes, compared to the
conventional deposition method using the larger FMM. This is more
advantageous for a relatively large display apparatus.
[0098] The deposition source 110 that contains and heats the
deposition material 115 is disposed in an opposite side of the
first chamber 731 to the side in which the substrate 500 is
disposed. While the deposition material 115 contained in the
deposition source 110 is vaporized, the deposition material 115 is
deposited on the substrate 500.
[0099] In particular, the deposition source 110 includes a crucible
112 that is filled with the deposition material 115, and a cooling
block 111 that includes a heater (not shown) that heats the
crucible 112 to vaporize the deposition material 115, which is
contained in the crucible 112, towards a side of the crucible 112,
and in particular, towards the deposition source nozzle unit 120.
The cooling block 111 prevents radiation of heat from the crucible
112 to outside, i.e., into the first chamber 731.
[0100] The deposition source nozzle unit 120 is disposed at a side
of the deposition source 110, and in particular, at the side of the
deposition source 110 facing the substrate 500. The deposition
source nozzle unit 120 includes a plurality of deposition source
nozzles 121 arranged at equal intervals in the Y-axis direction,
i.e., a scanning direction of the substrate 500. The deposition
material 110 that is vaporized in the deposition source 110 passes
through the deposition source nozzle unit 120 towards the substrate
500. As described above, when the deposition source nozzle unit 120
includes the plurality of deposition source nozzles 121 arranged in
the Y-axis direction, that is, the scanning direction of the
substrate 500, the size of a pattern formed of the deposition
material 115 discharged through the patterning slits 151 of the
patterning slit sheet 150 is affected by the size of each
deposition source nozzle 121 (since there is only one line of
deposition nozzles in the X-axis direction), and thus no shadow
zone may be formed on the substrate 500. In addition, since the
plurality of deposition source nozzles 121 are arranged in the
scanning direction of the substrate 500, even when there is a
difference in flux between the deposition source nozzles 121, the
difference may be compensated for and deposition uniformity may be
maintained constant.
[0101] The patterning slit sheet 150 and a frame 155 in which the
patterning slit sheet 150 is bound are disposed between the
deposition source 110 and the substrate 500. The frame 155 may be
formed in a lattice shape, similar to a window frame. The
patterning slit sheet 150 is bound inside the frame 155. The
patterning slit sheet 150 includes a plurality of patterning slits
151 arranged in the X-axis direction. The deposition material 115
that is vaporized in the deposition source 110, passes through the
deposition source nozzle unit 120 and the patterning slit sheet 150
towards the substrate 500. The patterning slit sheet 150 may be
manufactured by etching, which is the same method as used in a
conventional method of manufacturing an FMM, and in particular, a
striped FMM. In this regard, the total number of patterning slits
151 may be greater than the total number of deposition source
nozzles 121.
[0102] In addition, the deposition source 110 and the deposition
source nozzle unit 120 coupled to the deposition source 110 may be
disposed to be separated from the patterning slit sheet 150 by a
predetermined distance. Alternatively, the deposition source 110
and the deposition source nozzle unit 120 coupled to the deposition
source 110 may be connected to the patterning slit sheet 150 by a
first connection member 135. That is, the deposition source 110,
the deposition source nozzle unit 120, and the patterning slit
sheet 150 may be integrally formed as one body by being connected
to each other via the first connection member 135. The first
connection member 135 guides the deposition material 121, which is
discharged through the deposition source nozzles 121, to move in a
substantially straight line through the thin film deposition
assembly 100, and not to flow in the X-axis direction. In FIG. 6,
the first connection members 135 are formed on left and right sides
of the deposition source 110, the deposition source nozzle unit
120, and the patterning slit sheet 150 to guide the deposition
material 915 not to flow in the X-axis direction; however, aspects
of the present invention are not limited thereto. That is, the
first connection member 135 may be formed as a sealed box to guide
the flow of the deposition material 915 both in the X-axis and
Y-axis directions.
[0103] As described above, the thin film deposition assembly 100
performs deposition while being moved relative to the substrate
500. In order to move the thin film deposition assembly 100
relative to the substrate 500, the patterning slit sheet 150 is
separated from the substrate 500 by a predetermined distance.
[0104] In particular, in the conventional deposition method using
an FMM, deposition is performed with the FMM in close contact with
a substrate in order to prevent formation of a shadow zone on the
substrate. However, when the FMM is used in close contact with the
substrate, the contact may cause defects. In addition, in the
conventional deposition method, the size of the mask has to be the
same as the size of the substrate since the mask cannot be moved
relative to the substrate. Thus, the size of the mask has to be
increased as display apparatuses become larger. However, it is not
easy to manufacture such a large mask.
[0105] In order to overcome this problem, in the thin film
deposition assembly 100, the patterning slit sheet 150 is disposed
to be separated from the substrate 500 by a predetermined
distance.
[0106] As described above, a mask is formed to be smaller than a
substrate, and deposition is performed while the mask is moved
relative to the substrate. Thus, the mask can be easily
manufactured. In addition, defects caused due to the contact
between a substrate and an FMM, which occur in the conventional
deposition method, may be prevented. Furthermore, since it is
unnecessary to dispose the FMM in close contact with the substrate
during a deposition process, the manufacturing time may be
reduced.
[0107] FIG. 9 is a perspective view of a thin film deposition
assembly 100 according to another embodiment of the present
invention. Referring to FIG. 9, the thin film deposition assembly
100 includes a deposition source 110, a deposition source nozzle
unit 120, and a patterning slit sheet 150. In particular, the
deposition source 110 includes a crucible 112 that is filled with a
deposition material 115, and a cooling block 111 that includes a
heater (not shown) that heats the crucible 112 to vaporize the
deposition material 115, so as to move the vaporized deposition
material 115 to the deposition source nozzle unit 120. The cooling
block 111 is contained in the crucible 112. The deposition source
nozzle unit 120, which has a planar shape, is disposed at a side of
the deposition source 110. The deposition source nozzle unit 120
includes a plurality of deposition source nozzles 121 arranged in
the Y-axis direction. The patterning slit sheet 150 and a frame 155
are further disposed between the deposition source 110 and the
substrate 500. The patterning slit sheet 150 includes a plurality
of patterning slits 151 arranged in the X-axis direction. In
addition, the deposition source 110 and the deposition source
nozzle unit 120 may be connected to the patterning slit sheet 150
by a second connection member 133 (illustrated in FIG. 11).
[0108] A plurality of deposition source nozzles 121 formed on the
deposition source nozzle unit 120 are tilted at a predetermined
angle, unlike the thin film deposition assembly 100 described with
reference to FIG. 6. In particular, the deposition source nozzles
121 may include deposition source nozzles 121a and 121b arranged in
respective rows. The deposition source nozzles 121a and 121b may be
arranged in respective rows to alternate in a zigzag pattern. The
deposition source nozzles 121a and 121b may be tilted at a
predetermined angle on an XZ plane.
[0109] The deposition source nozzles 121a and 121b are arranged to
be tilted at a predetermined angle to each other. The deposition
source nozzles 121a in a first row and the deposition source
nozzles 121b in a second row may be tilted to face each other. That
is, the deposition source nozzles 121a of the first row in a left
part of the deposition source nozzle unit 121 may be tilted to face
a right side portion of the patterning slit sheet 150, and the
deposition source nozzles 121b of the second row in a right part of
the deposition source nozzle unit 121 may be tilted to face a left
side portion of the patterning slit sheet 150.
[0110] Due to the structure of the thin film deposition assembly
100 according to the current embodiment, the deposition of the
deposition material 115 may be adjusted to lessen a thickness
variation between the center and the end portions of the substrate
500 and improve thickness uniformity of the deposition film.
Moreover, utilization efficiency of the deposition material 115 may
also be improved.
[0111] FIG. 10 is a perspective view of a thin film deposition
assembly according to another embodiment of the present invention.
Referring to FIG. 10, the thin film deposition apparatus includes a
plurality of thin film deposition assemblies, each of which has the
structure of the thin film deposition apparatus 100 illustrated in
FIGS. 6 through 8. In other words, the thin film deposition
apparatus illustrated in FIG. 10 may include a multi-deposition
source that simultaneously discharges deposition materials for
forming a red (R) emission layer, a green (G) emission layer, and a
blue (B) emission layer.
[0112] In particular, the thin film deposition apparatus includes a
first thin film deposition assembly 100, a second thin film
deposition assembly 200, and a third thin film deposition assembly
300. Each of the first thin film deposition assembly 100, the
second thin film deposition assembly 200, and the third thin film
deposition assembly 300 has the same structure as the thin film
deposition assembly 100 described with reference to FIGS. 6 through
8, and thus a detailed description thereof will not be provided
here.
[0113] The deposition sources 110 of the first thin film deposition
assembly 100, the second thin film deposition assembly 200 and the
third thin film deposition assembly 300 may contain different
deposition materials, respectively. The first thin film deposition
assembly 100 may contain a deposition material for forming the R
emission layer, the second thin film deposition assembly 200 may
contain a deposition material for forming the G emission layer, and
the third thin film deposition assembly 300 may contain a
deposition material for forming the B emission layer.
[0114] In other words, in a conventional method of manufacturing an
organic light-emitting display apparatus, a separate chamber and
mask are used to form each color emission layer. However, when the
thin film deposition apparatus according to an embodiment of the
present invention is used, the R emission layer, the G emission
layer and the B emission layer may be formed at the same time with
a single multi-deposition source. Thus, the time it takes to
manufacture the organic light-emitting display apparatus is
significantly reduced. In addition, the organic light-emitting
display apparatus may be manufactured with a reduced number of
chambers, so that equipment costs are also markedly reduced.
[0115] Although not illustrated, a patterning slit sheet of the
first thin film deposition assembly 100, a patterning slit sheet of
the second thin film deposition assembly 200, a patterning slit
sheet of the third thin film deposition assembly 300 may be
arranged to be offset by a constant distance with respect to each
other, in order for deposition regions corresponding to the
patterning slit sheets not to overlap on the substrate 500. In
other words, when the first thin film deposition assembly 100, the
second thin film deposition assembly 200, and the third thin film
deposition assembly 300 are used to deposit an R emission layer, a
G emission layer and a B emission layer, respectively, patterning
slits of the first thin film deposition assembly 100, patterning
slits of the second thin film deposition assembly 200, and
patterning slits of the second thin film deposition assembly 300
are arranged not to be aligned with each other, in order to form
the R emission layer, the G emission layer and the B emission layer
in different regions of the substrate 500.
[0116] In addition, the deposition materials for forming the R
emission layer, the G emission layer, and the B emission layer may
have different deposition temperatures. Therefore, the temperatures
of the deposition sources of the respective first, second, and
third thin film deposition assemblies 100, 200, and 300 may be set
to be different.
[0117] Although the thin film deposition apparatus illustrated in
FIG. 10 according to a embodiment of the present invention includes
three thin film deposition assemblies, the present invention is not
limited thereto. In other words, a thin film deposition apparatus
according to another embodiment of the present invention may
include a plurality of thin film deposition assemblies, each of
which contains a different deposition material. For example, a thin
film deposition apparatus according to another embodiment of the
present invention may include five thin film deposition assemblies
respectively containing materials for a R emission layer, a G
emission layer, a B emission layer, an auxiliary layer (R') of the
R emission layer, and an auxiliary layer (G') of the G emission
layer.
[0118] As described above, a plurality of thin layers may be formed
at the same time with a plurality of thin film deposition
assemblies, and thus manufacturing yield and deposition efficiency
are improved. In addition, the overall manufacturing process is
simplified, and the manufacturing costs are reduced.
[0119] FIG. 11 is a perspective view of a thin film deposition
assembly 100 according to another embodiment of the present
invention, FIG. 12 is a schematic cross-sectional side view of the
thin film deposition assembly 100 of FIG. 11, according to an
embodiment of the present invention, and FIG. 13 is a schematic
plan view of the thin film deposition assembly 100 of FIG. 11,
according to an embodiment of the present invention.
[0120] Referring to FIGS. 11 through 13, the thin film deposition
assembly 100 includes a deposition source 110, a deposition source
nozzle unit 120, a barrier wall assembly 130, and patterning slits
151.
[0121] Although a chamber is not illustrated in FIGS. 11 through 13
for convenience of explanation, all the components of the thin film
deposition assembly 100 may be disposed within a chamber that has
an appropriate degree of vacuum maintained therein. The chamber has
an appropriate vacuum maintained therein in order to allow a
deposition material to move in a substantially straight line
through the thin film deposition assembly 100.
[0122] The substrate 500, which constitutes a target on which a
deposition material 115 is to be deposited, is conveyed into the
chamber by using the electrostatic chuck 600. The substrate 500 may
be a substrate for flat panel displays. A large substrate, such as
a mother glass, for manufacturing a plurality of flat panel
displays, may be used as the substrate 500.
[0123] Deposition may be performed while the substrate 500 or the
thin film deposition assembly 100 is moved relative to the other.
The substrate 500 may be moved relative to the thin film deposition
assembly 100 in a direction A.
[0124] Like in the above-described embodiment of FIG. 6, in the
thin film deposition assembly 100 according to the current
embodiment of the present invention, the patterning slit sheet 150
may be significantly smaller than a FMM used in the conventional
deposition method. In other words, in the thin film deposition
assembly 100, deposition is continuously performed, i.e., in a
scanning manner while the substrate 500 is moved in the Y-axis
direction. Thus, if a width of the patterning slit sheet 150 in the
X-axis direction is substantially the same as a width of the
substrate 500 in the X-axis direction, a length of the patterning
slit sheet 150 in the Y-axis direction may be significantly less
than a length of the substrate 500 in the Y-axis direction. Of
course, even when the width of the patterning slit sheet 150 in the
X-axis direction is less than the width of the substrate 500 in the
X-axis direction, deposition may be sufficiently performed on the
entire surface of the substrate 500 in a scanning manner due to
relative movement of the substrate 500 and the thin film deposition
assembly 100.
[0125] As described above, since the patterning slit sheet 150 may
be formed to be significantly smaller than an FMM used in the
conventional deposition method, it is relatively easy to
manufacture the patterning slit sheet 150 used in an aspect of the
present invention. In other words, using the patterning slit sheet
150, which is smaller than an FMM used in the conventional
deposition method, is more convenient in all processes, including
etching and subsequent other processes, such as precise extension,
welding, moving, and cleaning processes, compared to the
conventional deposition method using the larger FMM. This is more
advantageous for a relatively large display apparatus.
[0126] The deposition source 110 that contains and heats the
deposition material 115 is disposed in an opposite side of the
chamber to the side in which the substrate 500 is disposed.
[0127] The deposition source 110 includes a crucible 112 that is
filled with the deposition material 115, and a cooling block 111
that surrounds the crucible 112. The cooling block 111 prevents
radiation of heat from the crucible 112 to outside, i.e., into the
chamber. The cooling block 111 may include a heater (not shown)
that heats the crucible 112.
[0128] The deposition source nozzle unit 120 is disposed at a side
of the deposition source 110, and in particular, at the side of the
deposition source 110 facing the substrate 500. The deposition
source nozzle unit 120 includes a plurality of deposition source
nozzles 121 arranged in the X-axis direction. The deposition
material 115 that is vaporized in the deposition source 110 passes
through the plurality of deposition source nozzles 121 of the
deposition source nozzle unit 120 towards the substrate 500.
[0129] The barrier wall assembly 130 is disposed at a side of the
deposition source nozzle unit 120. The barrier wall assembly 130
includes a plurality of barrier walls 131, and a barrier wall frame
132 that constitutes an outer wall of the barrier walls 131. The
plurality of barrier walls 131 may be arranged parallel to each
other at equal intervals in the X-axis direction. In addition, each
of the barrier walls 131 may be formed to extend in an YZ plane in
FIG. 11, i.e., perpendicular to the X-axis direction. The plurality
of barrier walls 131 arranged as described above partition the
space between the deposition source nozzle unit 120 and the
patterning slit sheet 150 into a plurality of sub-deposition spaces
S (illustrated in FIG. 13). In the thin film deposition assembly
100, the deposition space is divided by the barrier walls 131 into
the sub-deposition spaces S that respectively correspond to the
deposition source nozzles 121 through which the deposition material
115 is discharged, as illustrated in FIG. 13.
[0130] The barrier walls 131 may be respectively disposed between
adjacent deposition source nozzles 121. In other words, each of the
deposition source nozzles 121 may be disposed between two adjacent
barrier walls 131. The deposition source nozzles 121 may be
respectively located at the midpoint between two adjacent barrier
walls 131. However, aspects of the present invention are not
limited thereto, and the deposition source nozzles 121 may be
disposed otherwise. The plurality of deposition source nozzles 121
may be disposed between two adjacent barrier walls 131. Even in
this case, the deposition source nozzles 121 may be respectively
located at the midpoint between two adjacent barrier walls 131.
[0131] As described above, since the barrier walls 131 partition
the space between the deposition source nozzle unit 120 and the
patterning slit sheet 150 into the plurality of sub-deposition
spaces S, the deposition material 115 discharged through each of
the deposition source nozzles 121 is not mixed with the deposition
material 115 discharged through the other deposition source nozzles
121, and passes through patterning slits 151 so as to be deposited
on the substrate 500. In other words, the barrier walls 131 guide
the deposition material 115, which is discharged through the
deposition source nozzles 121, to move in a substantially straight
line through the thin film deposition assembly 100, and not to flow
in the Z-axis direction.
[0132] As described above, the deposition material 115 is forced to
move in a substantially straight line through the thin film
deposition assembly 100 by installing the barrier walls 131, so
that a smaller shadow zone may be formed on the substrate 500
compared to a case where no barrier walls are installed. Thus, the
thin film deposition assembly 100 and the substrate 500 can be
separated from each other by a predetermined distance. This will be
described later in detail.
[0133] The barrier wall frame 132, which forms upper and lower
sides of the barrier walls 131, maintains the positions of the
barrier walls 131, and guides the deposition material 115, which is
discharged through the deposition source nozzles 121, to move in a
substantially straight line through the thin film deposition
assembly 100, and not to flow in the Y-axis direction.
[0134] The deposition source nozzle unit 120 and the barrier wall
assembly 130 may be separated from each other by a predetermined
distance. Thus, heat dissipated from the deposition source 110 may
be prevented from being conducted to the barrier wall assembly 130.
However, aspects of the present invention are not limited thereto.
In other words, when an appropriate insulation unit is disposed
between the deposition source nozzle unit 120 and the barrier wall
assembly 130, the deposition source nozzle unit 120 and the barrier
wall assembly 130 may be combined with each other and may contact
each other.
[0135] In addition, the barrier wall assembly 130 may be
constructed to be detachable from the thin film deposition assembly
100. In order to overcome these problems, in the thin film
deposition assembly 100, the deposition space is enclosed by using
the barrier wall assembly 130, so that the deposition material 115
that remains undeposited is mostly deposited within the barrier
wall assembly 130. Thus, since the barrier wall assembly 130 is
constructed to be detachable from the thin film deposition assembly
100, when a large amount of the deposition material 115 lies in the
barrier wall assembly 130 after a long deposition process, the
barrier wall assembly 130 may be detached from the thin film
deposition assembly 100 and then placed in a separate deposition
material recycling apparatus in order to recover the deposition
material 115. Due to the structure of the thin film deposition
assembly 100 according to the present embodiment, a reuse rate of
the deposition material 115 is increased, so that the deposition
efficiency is improved, and thus the manufacturing costs are
reduced.
[0136] The patterning slit sheet 150 and a frame 155 in which the
patterning slit sheet 150 is bound are disposed between the
deposition source 110 and the substrate 500. The frame 155 may be
formed in a lattice shape, similar to a window frame. The
patterning slit sheet 150 is bound inside the frame 155. The
patterning slit sheet 150 includes a plurality of patterning slits
151 arranged in the X-axis direction. The patterning slit sheet 150
extends in the Y-axis direction. The deposition material 115 that
is vaporized in the deposition source 110 and passes through the
deposition source nozzles 121, passes through the patterning slits
151 towards the substrate 500.
[0137] The patterning slit sheet 150 is formed of a metal sheet and
is bound on the frame 155 in an extended state. The patterning
slits 151 are formed as striped slits in the patterning slit sheet
150 manufactured by etching.
[0138] In the thin film deposition assembly 100, the total number
of patterning slits 151 may be greater than the total number of
deposition source nozzles 121. In addition, there may be a greater
number of patterning slits 151 than deposition source nozzles 121
disposed between two adjacent barrier walls 131. The number of the
patterning slits 151 may correspond to the number of deposition
patterns to be formed on the substrate 500.
[0139] In addition, the barrier wall assembly 130 and the
patterning slit sheet 150 may be formed to be separated from each
other by a predetermined distance. Alternatively, the barrier wall
assembly 130 and the patterning slit sheet 150 may be connected by
a separate second connection member 133. The temperature of the
barrier wall assembly 130 may increase to 100.degree. C. or higher
due to the deposition source 110 whose temperature is high. Thus,
in order to prevent the heat of the barrier wall assembly 130 from
being conducted to the patterning slit sheet 150, the barrier wall
assembly 130 and the patterning slit sheet 150 are separated from
each other by a predetermined distance.
[0140] As described above, the thin film deposition assembly 100
performs deposition while being moved relative to the substrate
500. In order to move the thin film deposition assembly 100
relative to the substrate 500, the patterning slit sheet 150 is
separated from the substrate 500 by a predetermined distance. In
addition, in order to prevent the formation of a relatively large
shadow zone on the substrate 500 when the patterning slit sheet 150
and the substrate 500 are separated from each other, the barrier
walls 131 are arranged between the deposition source nozzle unit
120 and the patterning slit sheet 150 to force the deposition
material 115 to move in a straight direction. Thus, the size of the
shadow zone formed on the substrate 500 is significantly
reduced.
[0141] In particular, in a conventional deposition method using an
FMM, deposition is performed with the FMM in close contact with a
substrate in order to prevent formation of a shadow zone on the
substrate. However, when the FMM is used in close contact with the
substrate, defects, such as scratched patterns that have been
already formed over the substrate due to the contact between the
substrate and the FMM, occur. In addition, in the conventional
deposition method, the size of the mask has to be the same as the
size of the substrate since the mask cannot be moved relative to
the substrate. Thus, the size of the mask has to be increased as
display apparatuses become larger. However, it is not easy to
manufacture such a large mask.
[0142] In order to overcome this problem, in the thin film
deposition assembly 100 according to an aspect of the present
invention, the patterning slit sheet 150 is disposed to be
separated from the substrate 500 by a predetermined distance. This
may be facilitated by installing the barrier walls 131 to reduce
the size of the shadow zone formed on the substrate 500.
[0143] When a patterning slit sheet is formed to be smaller than a
substrate according to an aspect of the present invention and then,
the patterning slit sheet is moved relative to the substrate a
large mask like in the conventional deposition method using the FMM
does not need to be manufactured. In addition, since the substrate
and the patterning slit sheet are separated from each other by a
predetermined distance, defects caused due to the contact between
the substrate and the patterning slit sheet may be prevented. In
addition, since it is unnecessary to use the patterning slit sheet
in close contact with the substrate during a deposition process,
the manufacturing speed may be improved.
[0144] In the thin film deposition assembly 100, the deposition
source 110 may be accommodated in a source chamber 113 connected to
a first chamber 731 in which deposition is to be performed, as
illustrated in FIGS. 14A and 14B.
[0145] In other words, the separate source chamber 113 is connected
to the first chamber 731 in which deposition is to be performed,
and the space between the source chamber 113 and the first chamber
731 is opened or closed by a high-vacuum valve 118.
[0146] In order to refill a deposition material in the deposition
source 110 after a deposition process is completed, the first
chamber 731 should be maintained under atmospheric pressure.
However, when the first chamber 731 is maintained under atmospheric
pressure to refill the deposition source 110, and then is
maintained in a vacuum state so as to perform a new deposition
process, this process takes a long time and production time
increases.
[0147] To this end, in an embodiment of the present invention, a
stage 114 that supports the deposition source 110 is disposed in
the source chamber 113, and the stage 114 is connected to bellows
116. The stage 114 is driven as the bellows 116 is driven. Thus,
the deposition source 110 can be moved between the source chamber
113 and the first chamber 731.
[0148] A shutter 117 is disposed around the deposition source 110,
and when the deposition source 110 is raised into the first chamber
731, the shutter 117 blocks a connection opening to the source
chamber 113 so as to prevent the source chamber 113 from being
contaminated due to the deposition material, as illustrated in FIG.
14A. After the deposition process is completed, the deposition
source 110 is lowered into the source chamber 113 when the shutter
117 is opened, and the source chamber 113 is closed by the
high-vacuum valve 118 in an air-tight state with respect to the
first chamber 731, as illustrated in FIG. 14B. In this state, the
state of the source chamber 113 is changed to be under atmospheric
pressure, and a separate door (not shown) disposed in the source
chamber 113 is opened, so that the deposition source 110 may be
taken out from the source chamber 113 to refill the deposition
material in the deposition source 110. According to the structure,
the deposition material may be easily filled in the deposition
source 110 without exhausting the first chamber 173.
[0149] In addition, the thin film deposition assembly 100 may be
mounted on the second support 614, as illustrated in FIG. 4. In
this regard, a second driving unit 618 is disposed on the second
support 614, and the second driving unit 618 is connected to the
frame 155 of the thin film deposition assembly 100 and finely
adjusts the position of the thin film deposition assembly 100 so
that the substrate 500 and the thin film deposition assembly 100
may be aligned with each other. Fine adjustment of the alignment
may be performed in real-time while the deposition process is being
performed.
[0150] The thin film deposition assembly 100 may further include a
camera assembly 170 for aligning the substrate 500 and the thin
film deposition assembly 100 with each other, as illustrated in
FIGS. 11 and 13. The camera assembly 170 is used to align a first
mark 159 formed on the frame 155 and a second mark 501 formed on
the substrate 500 with each other in real-time.
[0151] The camera assembly 170 may obtain a wide view area within a
vacuum chamber in which the deposition process is performed, as
illustrated in FIG. 10. In other words, as illustrated in FIG. 15,
a camera 172 is disposed in a cylindrical hood 171, and an optical
system 173 including a lens is disposed between the camera 172 and
an opening 176 of the hood 171. A protection window 174 on which
heating patterns 175 are formed, is disposed between the optical
system 173 and the opening 176. While the deposition process is
performed by using the heating patterns 175, an organic material is
not deposited on the surface of the protection window 174. Thus,
even when the deposition process is performed, the camera 172 can
determine the alignment via the protection window 174 within the
vacuum chamber.
[0152] FIG. 16 is a schematic perspective view of a thin film
deposition assembly 100 according to another embodiment of the
present invention.
[0153] Referring to FIG. 16, the thin film deposition assembly 100
includes a deposition source 110, a deposition source nozzle unit
120, a first barrier wall assembly 130, a second barrier wall
assembly 140, and a patterning slit sheet 150.
[0154] Although a chamber is not illustrated in FIG. 16 for
convenience of explanation, all the components of the thin film
deposition assembly 100 may be disposed within a chamber that has
an appropriate degree of vacuum maintained therein. The chamber has
an appropriate vacuum maintained therein in order to allow a
deposition material to move in a substantially straight line
through the thin film deposition assembly 100.
[0155] The substrate 500, which constitutes a target on which a
deposition material 115 is to be deposited, is disposed in the
chamber. The deposition source 110 that contains and heats the
deposition material 115 is disposed in an opposite side of the
chamber to the side in which the substrate 500 is disposed.
[0156] Detailed structures of the deposition source 110 and the
patterning slit sheet 150 are the same as those of FIG. 11 and thus
a detailed description thereof will not be provided here. The first
barrier wall assembly 130 is the same as the barrier wall assembly
130 described with reference to the embodiment of FIG. 11 and thus
a detailed description thereof will not be provided here.
[0157] The second barrier wall assembly 140 is disposed at a side
of the first barrier wall assembly 130. The second barrier wall
assembly 140 includes a plurality of second barrier walls 141, and
a second barrier wall frame 142 that constitutes an outer wall of
the second barrier walls 141.
[0158] The plurality of second barrier walls 141 may be arranged
parallel to each other at equal intervals in the X-axis direction.
In addition, each of the second barrier walls 141 may be formed to
extend in the YZ plane in FIG. 16, i.e., perpendicular to the
X-axis direction.
[0159] The plurality of first barrier walls 131 and second barrier
walls 141 arranged as described above partition the space between
the deposition source nozzle unit 120 and the patterning slit sheet
150. In the thin film deposition assembly 100 illustrated in FIG.
16, the deposition space is divided by the first barrier walls 131
and the second barrier walls 141 into sub-deposition spaces that
respectively correspond to the deposition source nozzles 121
through which the deposition material 115 is discharged.
[0160] The second barrier walls 141 may be disposed to correspond
respectively to the first barrier walls 131. In other words, the
second barrier walls 141 may be respectively disposed to be
parallel to and to be on the same plane as the first barrier walls
131. Each pair of the corresponding first and second barrier walls
131 and 141 may be located on the same plane. Although the first
barrier walls 131 and the second barrier walls 141 are respectively
illustrated as having the same thickness in the X-axis direction,
aspects of the present invention are not limited thereto. In other
words, the second barrier walls 141, which need to be accurately
aligned with the patterning slit sheet 151, may be formed to be
relatively thin, whereas the first barrier walls 131, which do not
need to be precisely aligned with the patterning slit sheet 550,
may be formed to be relatively thick. This makes it easier to
manufacture the thin film deposition assembly 100.
[0161] A plurality of thin film deposition assemblies 100 as
described above may be continuously arranged in the first chamber
731, as illustrated in FIG. 1. In this regard, the first through
fourth thin film deposition assemblies 100, 200, 300, and 400 (see
FIG. 1) may deposit different deposition materials. In this regard,
patterns of patterning slits of the first through fourth thin film
deposition assemblies 100, 200, 300, and 400 are different from one
another, so that a layer forming process including a process of
depositing red, green, and blue pixels at one time may be
performed.
[0162] FIG. 17 is a cross-sectional view of an active matrix (AM)
organic light-emitting display apparatus manufactured by using a
thin film deposition apparatus, according to an embodiment of the
present invention.
[0163] Referring to FIG. 17, the AM organic light-emitting display
apparatus is disposed on a substrate 30. The substrate 30 may be
formed of a transparent material, for example, glass, and may be
also formed of plastic or metal. An insulating layer 31, such as a
buffer layer, is formed on the substrate 30.
[0164] A thin film transistor (TFT) 40, a capacitor 50, and an
organic light-emitting device 60 are formed on the insulating layer
31, as illustrated in FIG. 17.
[0165] A semiconductor active layer 41 is formed on an upper
surface of the insulating layer 31 in a predetermined pattern. A
gate insulating layer 32 is formed to cover the semiconductor
active layer 41. The semiconductor active layer 41 may include a
p-type or n-type semiconductor material.
[0166] A gate electrode 42 of the TFT 40 is formed on an upper
surface of the gate insulating layer 32 corresponding to the
semiconductor active layer 41. An interlayer insulating layer 33 is
formed to cover the gate electrode 42. After the interlayer
insulating layer 33 is formed, the gate insulating layer 32 and the
interlayer insulating layer 33 are etched by, for example,
performing dry etching, to form a contact hole for exposing parts
of the semiconductor active layer 41.
[0167] Next, a source/drain electrode 43 is formed on the
interlayer insulating layer 33 to contact the semiconductor active
layer 41 through the contact hole. A passivation layer 34 is formed
to cover the source/drain electrode 43, and is etched to expose a
part of the source/drain electrode 43. A separate insulating layer
(not shown) may be further formed on the passivation layer 34 so as
to planarize the passivation layer 34.
[0168] In addition, the organic light-emitting device 60 displays
predetermined image information by emitting red, green, or blue
light as current flows. The organic light-emitting device 60
includes a first electrode 61 formed on the passivation layer 34.
The first electrode 61 is electrically connected to the drain
electrode 43 of the TFT 40.
[0169] A pixel defining layer 35 is formed to cover the first
electrode 61. After an opening 64 is formed in the pixel defining
layer 35, an organic emission layer 63 is formed in a region
defined by the opening 64. A second electrode 62 is formed on the
organic emission layer 63.
[0170] The pixel defining layer 35, which defines individual
pixels, is formed of an organic material. The pixel defining layer
35 also planarizes the surface of a region of the substrate 30
where the first electrode 61 is formed, and in particular, the
surface of the passivation layer 34.
[0171] The first electrode 61 and the second electrode 62 are
insulated from each other, and respectively apply voltages of
opposite polarities to the organic emission layer 63 to induce
light emission in the organic emission layer 63.
[0172] The organic emission layer 63 may be formed of a
low-molecular weight organic material or a polymer organic
material. When a low-molecular weight organic material is used, the
organic emission layer 63 may have a single or multi-layer
structure including at least one selected from the group consisting
of a hole injection layer (HIL), a hole transport layer (HTL), an
emission layer (EML), an electron transport layer (ETL), an
electron injection layer (EIL), etc. Examples of available organic
materials may include copper phthalocyanine (CuPc),
N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB),
tris-8-hydroxyquinoline aluminum (Alq3), etc. Such a low-molecular
weight organic material may be deposited by vacuum deposition using
one of the thin film deposition apparatuses or the deposition
source 110 described above with reference to FIGS. 1 through
16.
[0173] First, after the opening 64 is formed in the pixel defining
layer 35, the substrate 30 is conveyed into a chamber 731, as
illustrated in FIG. 1. A target organic material is deposited by
the first through fourth thin film deposition assemblies 100, 200,
300, and 400.
[0174] After the organic emission layer 63 is formed, the second
electrode 62 may be formed by performing the same deposition
process as the deposition process required to form the first
electrode 61.
[0175] The first electrode 61 functions as an anode, and the second
electrode 62 functions as a cathode. Alternatively, the first
electrode 61 may function as a cathode, and the second electrode 62
may function as an anode. The first electrode 61 may be patterned
to correspond to individual pixel regions, and the second electrode
62 may be formed to cover all the pixels.
[0176] The first electrode 61 may be formed as a transparent
electrode or a reflective electrode. Such a transparent electrode
may be formed of at least one material selected from the group
consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc
oxide (ZnO), and indium oxide (In.sub.2O.sub.3). Such a reflective
electrode may be formed by forming a reflective layer by using at
least one material selected from the group consisting of silver
(Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd),
gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium
(Cr), and a compound thereof and by forming a layer by using at
least one material selected from the group consisting of ITO, IZO,
ZnO, and In.sub.2O.sub.3 on the reflective layer. The first
electrode 61 may be formed by forming a layer by, for example,
sputtering, and then patterning the layer by, for example,
photolithography.
[0177] The second electrode 62 may also be formed as a transparent
electrode or a reflective electrode. When the second electrode 62
is formed as a transparent electrode, the second electrode 62
functions as a cathode. To this end, such a transparent electrode
may be formed by depositing a metal having a low work function,
such as lithium (Li), calcium (Ca), lithium fluoride/calcium
(LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver
(Ag), magnesium (Mg), or a compound thereof on a surface of the
organic emission layer 63 and forming an auxiliary electrode layer
or a bus electrode line thereon from ITO, IZO, ZnO,
In.sub.2O.sub.3, or the like. When the second electrode 62 is
formed as a reflective electrode, the reflective layer may be
formed by depositing at least one material selected from the group
consisting of Li, Ca, LiF/Ca, LiF/AI, Al, Ag, Mg, and a compound
thereof on the entire surface of the organic emission layer 63. The
second electrode 62 may be formed by using the same deposition
method as used to form the organic emission layer 63 described
above.
[0178] The thin film deposition assemblies according to the
embodiments of the present invention described above may be applied
to form an organic layer or an inorganic layer of an organic TFT,
and to form layers from various materials.
[0179] As described above, in a thin film deposition apparatus
according to aspects of the present invention and a method of
manufacturing an organic light-emitting display apparatus according
to the aspects of the present invention by using the thin film
deposition apparatus, the thin film deposition apparatus may be
easily used to manufacture large substrates on a mass scale. In
addition, the thin film deposition apparatus and the
organic-light-emitting display apparatus may be easily
manufactured, may improve manufacturing yield and deposition
efficiency, and may allow deposition materials to be reused.
[0180] While aspects of the present invention has been particularly
shown and described with reference to exemplary embodiments
thereof, it will be understood by those of ordinary skill in the
art that various changes in form and details may be made therein
without departing from the spirit and scope of the present
invention as defined by the following claims.
* * * * *