U.S. patent application number 13/850735 was filed with the patent office on 2013-10-10 for method of manufacturing semiconductor device, substrate processing apparatus and evaporation system.
This patent application is currently assigned to Hitachi Kokusai Electric Inc.. The applicant listed for this patent is HITACHI KOKUSAI ELECTRIC INC.. Invention is credited to Kosuke TAKAGI, Yuji TAKEBAYASHI.
Application Number | 20130267100 13/850735 |
Document ID | / |
Family ID | 49292623 |
Filed Date | 2013-10-10 |
United States Patent
Application |
20130267100 |
Kind Code |
A1 |
TAKAGI; Kosuke ; et
al. |
October 10, 2013 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING
APPARATUS AND EVAPORATION SYSTEM
Abstract
An amount of particles generated when a source material is used
is suppressed. A substrate is loaded into a process chamber, and
the source material is sequentially flowed into an evaporator, and
a mist filter constituted by assembling a plurality of at least two
types of plates including holes disposed at different positions to
be evaporated and supplied into the process chamber to process the
substrate, and then, the substrate is unloaded from the process
chamber.
Inventors: |
TAKAGI; Kosuke; (Toyama-shi,
JP) ; TAKEBAYASHI; Yuji; (Toyama-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HITACHI KOKUSAI ELECTRIC INC. |
Tokyo |
|
JP |
|
|
Assignee: |
Hitachi Kokusai Electric
Inc.
Tokyo
JP
|
Family ID: |
49292623 |
Appl. No.: |
13/850735 |
Filed: |
March 26, 2013 |
Current U.S.
Class: |
438/758 ;
118/724; 118/726; 55/385.1 |
Current CPC
Class: |
H01L 21/02104 20130101;
C23C 16/405 20130101; C23C 16/4485 20130101; C23C 16/4402 20130101;
C23C 16/45546 20130101 |
Class at
Publication: |
438/758 ;
118/726; 118/724; 55/385.1 |
International
Class: |
C23C 16/448 20060101
C23C016/448; H01L 21/02 20060101 H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 6, 2012 |
JP |
2012-087838 |
Feb 13, 2013 |
JP |
2013-025544 |
Claims
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber; (b) evaporating a
source material by sequentially flowing the source to an evaporator
and a mist filter comprising one or more first plates and one or
more second plates; (c) supplying the source material evaporated in
the step (b) into the process chamber to process the substrate; and
(d) unloading the substrate from the process chamber, wherein each
of the one or more first plates comprises one or more first holes,
and each of the one or more second plates comprises one or more
second holes disposed at different positions from those of the one
or more first holes.
2. The method of manufacturing the semiconductor device of claim 1,
wherein the one or more first holes are disposed near an outer
circumference of each of the one or more first plates, the one or
more second holes are disposed near a center of each of the one or
more second plates, and the one or more first plates and the one or
more second plates are alternately disposed, and wherein the step
(b) comprises evaporating the source material passed through the
evaporator by alternately flowing the source material through the
one or more first holes and the one or more second holes.
3. The method of manufacturing the semiconductor device of claim 1,
wherein the step (b) comprises evaporating the source material
sequentially flown through the evaporator and the mist filter by
further flowing the source material through a gas filter.
4. A substrate processing apparatus comprising: a process chamber
configured to accommodate a substrate; a process gas supply system
configured to supply a process gas into the process chamber; and an
exhaust system configured to exhaust the process chamber, wherein
the process gas supply system comprises: an evaporator configured
to receive a source material; and a mist filter disposed at a
downstream side of the evaporator, and comprising one or more first
plates and one or more second plates, wherein each of the one or
more first plates comprises one or more first holes, and each of
the one or more second plates comprises one or more second holes
disposed at different positions from those of the one or more first
holes.
5. The substrate processing apparatus of claim 4, wherein the one
or more first holes are disposed near an outer circumference of
each of the one or more first plates, the one or more second holes
are disposed near a center of each of the one or more second
plates, and the one or more first plates and the one or more second
plates are alternately disposed.
6. The substrate processing apparatus of claim 4, wherein the
process gas supply system further comprises a gas filter disposed
at a downstream side of the mist filter.
7. The substrate processing apparatus of claim 6, wherein the
evaporator, the mist filter and the gas filter are separate from
one another.
8. The substrate processing apparatus of claim 4, wherein the mist
filter further comprises a heater configured to heat the one or
more first plates and the one or more second plates.
9. The substrate processing apparatus of claim 4, wherein each of
the one or more first plates and the one or more second plates
comprises a metal.
10. The substrate processing apparatus of claim 4, wherein a shape
of each of the one or more first plates is same as that of each of
the one or more second plates except for the one or more first
holes and the one or more second holes.
11. The substrate processing apparatus of claim 4, wherein each of
the one or more first plates and the one or more second plates
comprises a plate section comprising one of the one or more first
holes and the one or more second holes; and an outer
circumferential section disposed at an outer circumference of the
plate section, the outer circumferential section being thicker than
the plate section, and the outer circumferential section of one of
the one or more first plates is in contact with the outer
circumferential section of one of the one or more second plates
adjacent to the outer circumferential section of the one of the one
or more first plates in a manner that a space is provided between
the plate section of the one of the one or more first plates and
the plate section of the one of the one or more second plates.
12. The substrate processing apparatus of claim 11, wherein a
stepped portion is provided between a side surface of the outer
circumferential section and a side surface of the plate
section.
13. The substrate processing apparatus of claim 4, wherein a
sintered metal is filled between the one or more first plates and
the one or more second plates.
14. An evaporation system comprising: an evaporator configured to
receive a source material; and a mist filter disposed at a
downstream side of the evaporator and comprising one or more first
plates and one or more second plates, wherein each of the one or
more first plates comprises one or more first holes, and each of
the one or more second plates comprises one or more second holes
disposed at different positions from those of the one or more first
holes.
15. The evaporation system of claim 14, wherein the one or more
first holes are disposed near an outer circumference of each of the
one or more first plates, the one or more second holes are disposed
near a center of each of the one or more second plates, and the one
or more first plates and the one or more second plates are
alternately disposed.
16. The evaporation system of claim 15, further comprising a gas
filter disposed at a downstream side of the mist filter.
17. The evaporation system of claim 16, wherein the evaporator, the
mist filter and the gas filter are separate from one another.
18. The evaporation system of claim 14, wherein the mist filter
further comprises a heater configured to heat the one or more first
plates and the one or more second plates.
Description
CROSS-REFERENCE TO RELATED PATENT APPLICATION
[0001] This U.S. non-provisional patent application claims priority
under 35 U.S.C. .sctn.119 of Japanese Patent Application Nos.
2012-087838 and 2013-025544 filed on Apr. 6, 2012 and Feb. 13, 2013
respectively, in the Japanese Patent Office, the entire contents of
which are hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a method of manufacturing a
semiconductor device, a substrate processing apparatus and an
evaporation system, and more particularly, to a method of
manufacturing a semiconductor device including a process of
processing a semiconductor wafer using liquid source and a
substrate processing apparatus and an evaporation system which are
exemplarily used therein.
[0004] 2. Description of the Related Art
[0005] A technique of forming a film on a substrate using liquid
source is disclosed in Patent Document 1 as one process of
processes of manufacturing a semiconductor device.
RELATED ART DOCUMENT
Patent Document
[0006] Japanese Patent Application Laid-Open No. 2010-28094
SUMMARY OF THE INVENTION
[0007] When substrate processing such as film-forming is performed
using liquid source, a source gas, which is gasified by evaporating
the liquid source, is used. However, when a film is formed on a
semiconductor wafer using such a source material, particles may be
generated on the wafer due to bad evaporation. In addition, the
evaporated source gas may be reliquefied such that the liquid
source cannot be efficiently supplied into a process chamber.
[0008] It is an aspect of the present invention to provide a method
of manufacturing a semiconductor device, a substrate processing
apparatus, and an evaporation system that are capable of
suppressing an amount of particles generated when liquid source is
used and efficiently evaporating liquid source to supply the
evaporated fuel into a process chamber.
[0009] According to an aspect of the present invention, there is
provided a method of manufacturing a semiconductor device,
including: (a) loading a substrate into a process chamber; (b)
evaporating a source material by sequentially flowing the source
material to an evaporator and a mist filter including one or more
first plates and one or more second plates; (c) supplying the
source material evaporated in the step (b) into the process chamber
to process the substrate; and (d) unloading the substrate from the
process chamber, wherein each of the one or more first plates
includes one or more first holes, and each of the one or more
second plates includes one or more second holes disposed at
different positions from those of the one or more first holes.
[0010] According to another aspect of the present invention, there
is provided a substrate processing apparatus including: a process
chamber configured to accommodate a substrate; a process gas supply
system configured to supply a process gas into the process chamber;
and an exhaust system configured to exhaust the process chamber,
wherein the process gas supply system includes: an evaporator
configured to receive a source material; and a mist filter disposed
at a downstream side of the evaporator, and including one or more
first plates and one or more second plates, wherein each of the one
or more first plates includes one or more first holes, and each of
the one or more second plates includes one or more second holes
disposed at different positions from those of the one or more first
holes.
[0011] According to another aspect of the present invention, there
is provided an evaporation system including: an evaporator
configured to receive a source material; and a mist filter disposed
at a downstream side of the evaporator and including one or more
first plates and one or more second plates, wherein each of the one
or more first plates includes one or more first holes, and each of
the one or more second plates includes one or more second holes
disposed at different positions from those of the one or more first
holes.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic view for describing a conventional
source material supply system for the purpose of comparison;
[0013] FIG. 2 is a schematic view for describing a source material
supply system of an exemplary embodiment of the present
invention;
[0014] FIG. 3 is a schematic perspective view for describing a mist
filter exemplarily used in the exemplary embodiment of the present
invention;
[0015] FIG. 4 is a schematic exploded perspective view for
describing the mist filter exemplarily used in the exemplary
embodiment of the present invention;
[0016] FIG. 5 is a schematic exploded perspective view for
describing the mist filter exemplarily used in the exemplary
embodiment of the present invention;
[0017] FIG. 6 is a view for describing a status of particles when
the conventional source material supply system is used;
[0018] FIG. 7 is a schematic cross-sectional view for describing a
flow velocity distribution in the mist filter exemplarily used in
the exemplary embodiment of the present invention;
[0019] FIG. 8 is a schematic cross-sectional view for describing a
pressure distribution in the mist filter exemplarily used in the
exemplary embodiment of the present invention;
[0020] FIG. 9 is a schematic cross-sectional view for describing a
temperature distribution in the mist filter exemplarily used in the
exemplary embodiment of the present invention;
[0021] FIGS. 10A, 10B and 10C are schematic cross-sectional views
for describing a variant of the mist filter exemplarily used in the
exemplary embodiment of the present invention;
[0022] FIGS. 11A, 11B and 11C are schematic cross-sectional views
for describing a variant of the mist filter exemplarily used in the
exemplary embodiment of the present invention;
[0023] FIGS. 12A and 12B are schematic cross-sectional views for
describing a variant of the mist filter exemplarily used in the
exemplary embodiment of the present invention;
[0024] FIG. 13 is a schematic longitudinal cross-sectional view for
describing a substrate processing apparatus of an exemplary
embodiment of the present invention;
[0025] FIG. 14 is a schematic horizontal cross-sectional view taken
along line A-A of FIG. 13;
[0026] FIG. 15 is a block diagram showing a configuration of a
controller included in the substrate processing apparatus shown in
FIG. 13;
[0027] FIG. 16 is a flowchart for describing a process of
manufacturing a zirconium oxide film using the substrate processing
apparatus of the exemplary embodiment of the present invention;
and
[0028] FIG. 17 is a timing chart for describing a process of
manufacturing a zirconium oxide film using the substrate processing
apparatus of the exemplary embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0029] Next, an exemplary embodiment of the present invention will
be described.
[0030] First, a source material supply system exemplarily used in a
substrate processing apparatus of an exemplary embodiment of the
present invention will be described.
[0031] When the substrate processing such as film-forming or the
like is performed using the liquid source as described above, a
source gas, which is gasified by evaporating the liquid source, is
used. In order to evaporate the liquid source, (1) raising a
temperature, and (2) lowering a pressure are very important.
However, in a process of manufacturing a semiconductor device,
since various restrictions due to apparatus configurations or
process conditions are provided, for example, when the temperature
cannot be excessively increased or the pressure cannot be
sufficiently lowered, it is difficult to form an appropriate
evaporation line.
[0032] When the processing such as the film-forming is performed on
the semiconductor wafer using the source gas, which is gasified by
evaporating the liquid source as described above, particles may be
generated on the wafer or the evaporated gas may be reliquefied.
The inventors have keenly researched these problems and obtained
the following knowledge.
[0033] As shown in FIG. 1, in the substrate processing apparatus in
which a gas filter 272a is installed in a gas supply pipe 232a from
an evaporator 271a configured to evaporate the liquid source to a
process chamber 201, the gas filter 272a can collect droplets or
particles which are caused to be badly evaporated from the
evaporator 271a or particles from the gas supply pipe 232a. In
addition, a heater 150 may be installed at the gas supply pipe 232a
from the evaporator 271a to the process chamber 201 to heat the
source gas passing through the gas supply pipe 232a.
[0034] However, when the liquid source that cannot be easily
evaporated by the evaporator 271a (a vapor pressure is low) is used
or a required evaporation flow rate is high, the particles or the
droplets due to bad evaporation cannot be completely collected by
the gas filter 272a. When the film-forming is performed in this
state, as shown in FIG. 6, particles are increased on a wafer 200.
In addition, the gas filter 272a may be clogged and become a
particle source. Further, when the clogging occurs, the filter of
the gas filter 272a should be replaced with a new one.
[0035] For this reason, as shown in FIG. 2, the inventors proposed
installing a mist filter (mist killer) 300 at the gas supply pipe
232a between the evaporator 271a and the gas filter 272a. In
addition, the heater 150 is installed at the gas supply pipe 232a
from the evaporator 271a to the process chamber 201 to heat the
source gas passing through the gas supply pipe 232a.
[0036] Referring to FIG. 3, the mist filter 300 includes a mist
filter main body 350, and a heater 360 installed outside the mist
filter main body 350 and configured to cover the mist filter main
body 350.
[0037] Referring to FIGS. 4 and 5, the mist filter main body 350 of
the mist filter 300 includes end plates 310 and 340 of both ends,
and two types of plates 320 and 330 disposed between the end plates
310 and 340. The two types of plates 320 and 330 include a first
plate 320 and a second plate 330. A joint 312 is installed at the
end plate 310 of an upstream side. A joint 342 is installed at the
end plate 340 of a downstream side. A gas path 311 is disposed in
the end plate 310 and the joint 312. A gas path 341 is disposed in
the end plate 340 and the joint 342. The joint 312 and the joint
342 (the gas path 311 and the gas path 341) are connected to the
gas supply pipe 232a.
[0038] Each of the two types of plates 320 and 330 is installed in
plural and alternately disposed between the end plates 310 and 340.
The plate 320 includes a flat plate section 328, and an outer
circumferential section 329 disposed at an outer circumference of
the plate section 328. A plurality of holes 322 are disposed in the
plate section 328 only near the outer circumference thereof. The
plate 330 includes a flat plate section 338, and an outer
circumferential section 339 disposed at an outer circumference of
the plate section 338. A plurality of holes 332 are disposed in the
plate section 338 only near a center thereof (i.e., at different
positions from the positions at which the holes 322 are disposed in
the plate section 328). The mist filter 300 is constituted by
assembling the plates 320 and the plates 330.
[0039] The plates 320 and the plates 330 have the same or
substantially the same shape except for formation positions of the
holes 322 and 332. The flat plate section 328 and the plate section
338 have circular shapes when seen in a plan view, and have the
same or substantially the same shape except for formation positions
of the holes 322 and 332. The holes 322 are disposed on concentric
circles around the outer circumference of the plate section 328.
The holes 332 are disposed in concentric circles around a center of
the plate section 338. Here, the circles in which the holes 322 are
disposed and the circles in which the holes 332 are disposed have
different radii. Specifically, the radii of the circles in which
the holes 322 are disposed are larger than those of the circles in
which the holes 332 are disposed. On other words, a region of the
plate section 328 in which the holes 322 are disposed is different
from a region of the plate section 338 in which the holes 332 are
formed. The regions are disposed not to overlap each other in a
stacking direction when the plates 320 and the plates 330 are
alternately disposed (stacked or assembled). As the plates 320 and
330 are alternately disposed as described above, the holes 322 and
the holes 332 are disposed to be deviated from an upstream side
toward a downstream side of the mist filter 300. That is, the holes
322 and the holes 332 are disposed not to overlap each other from
the upstream side to the downstream side of the mist filter
300.
[0040] The outer circumferential sections 329 and 339 of the plates
320 and 330 are thicker than the plate sections 328 and 338. As the
outer circumferential sections 329 and 339 come in contact with the
outer circumferential sections 329 and 339 of the adjacent plates,
a space (to be described below) is disposed between the plate
sections 328 and 338. In addition, the outer circumferential
sections 329 and 339 are disposed at positions offset with respect
to the plate sections 328 and 338. That is, a stepped portion is
disposed between side surfaces of the outer circumferential
sections 329 and 339 and side surfaces of the plate sections 328
and 338. More specifically, one surface of the outer
circumferential sections 329 and 339 (one surface in the stacking
direction of the plate 320 and the plate 330) protrudes from planes
of the plate sections 328 and 338, and the other surface of the
outer circumferential sections 329 and 339 is disposed on edge
sections of the plate sections 328 and 338. Accordingly, when the
plates 320 and the plates 330 are stacked, the outer
circumferential section 329 of the plate 320 is inserted into the
edge section of the plate section 338 of the plate 330, the outer
circumferential section 339 of the plate 330 is inserted into the
edge section of the plate section 328 of the plate 320, and thus
the plates 320 and 330 are correspondingly coupled to each
other.
[0041] As the plates 320 and 330 are alternately disposed as
described above, a gas path 370 may become complicated, and
probability of colliding droplets generated due to bad evaporation
or reliquefaction with heated wall surfaces (the plate sections 328
and 338) may be increased. In addition, the size of the holes 322
and 332 is set depending on a pressure in the mist filter main body
350, which is preferably a diameter of 1 to 3 mm. A basis of the
lower limit value is that the holes are clogged when the size of
the holes is too small. In addition, in the holes 332 disposed in
the plate 330, the size of the holes disposed at the center may be
smaller than that of the holes disposed around the center.
[0042] The source gas gasified by evaporating the liquid source
using the evaporator 271a (see FIG. 2) and the droplets generated
due to bad evaporation or reliquefaction are introduced into the
mist filter main body 350 through the gas path 311 in the end plate
310 and the joint 312, and collide with a center portion 421 (a
portion in which the holes 322 are not formed) of the plate section
328 of the one first plate 320. Then, they pass through the holes
322 disposed near the outer circumference of the plate section 328
and collide with an outer circumferential section 432 (a portion in
which the holes 332 are not formed) of the flat plate section 338
of the second plate 330. Then, they pass through the holes 332
disposed near the center of the plate section 338 and collide with
a center portion 422 (a portion in which the holes 322 are not
formed) of the plate section 328 of the other first plate 320.
Then, in the same method as described above, they sequentially pass
the plates 330 and 320 to be ejected from the mist filter main body
350 through the gas path 341 in the end plate 340 and the joint
342, and are delivered to the gas filter 272a (see FIG. 2) of the
downstream side.
[0043] The mist filter main body 350 is heated by the heater 360
(see FIG. 3) from the outside. The mist filter main body 350
includes the first plates 320 and the second plates 330, the first
plate 320 includes the flat plate section 328 and the outer
circumferential section 329 disposed at the outer circumference of
the plate section 328, and the second plate 330 includes the flat
plate section 338 and the outer circumferential section 339
disposed at the outer circumference of the plate section 338. Since
the plate section 328 and the outer circumferential section 329 are
integrally formed and the plate section 338 and the outer
circumferential section 339 are integrally formed, when the mist
filter main body is heated by the heater 360 from the outside, the
heat is efficiently transferred to the flat plate sections 328 and
338. In addition, even if the plate section 328 and the outer
circumferential section 329 are not integrally formed but are in
full contact with each other, or if the plate section 338 and the
outer circumferential section 339 are not integrally formed but are
in full contact with each other, the heat from the heater 360 is
also sufficiently transferred to the plate sections 328 and 338
efficiently.
[0044] In the mist filter main body 350, since the gas path 370 is
configured to be complicated by the first plates 320 and the second
plates 330 as described above, probability of the evaporated source
gas and the droplets generated due to bad evaporation or
reliquefaction colliding with the heated plate sections 328 and 338
can be increased without excessively increasing pressure loss in
the mist filter main body 350. In addition, the droplets generated
due to bad evaporation or reliquefaction collide with the heated
plate sections 328 and 338 in the mist filter main body 350 having
a sufficient calorie and is reheated and evaporated.
[0045] A material of the mist filter main body 350 may have heat
conductivity equal to or higher than that of the material used in
the evaporator 271a or a pipe 232a. In addition, the material may
have corrosion resistance. Stainless use steel (SUS) may be used as
a general material.
[0046] While the above description has been given as to a case
where each of the plates 320 and the plates 330 are provided in
plural numbers, it is also possible that the mist filter main body
350 includes at least one plate 320 and at least one plate 330.
Similarly, although the above description has been given as to a
case where each of the holes 322 and the holes 332 are provided in
plural numbers, there may exist at least one hole 322 and at least
one hole 332.
[0047] Next, a result of performing analysis of the mist filter
main body 350 using numerical fluid mechanics analysis software
(CFdesign) will be described. Dimensions of the mist filter main
body 350, which is an analysis target, are set such that an outer
diameter is 40 mm and an overall length is 127 mm.
[0048] Referring to FIG. 7, the analysis was performed under the
condition in which nitrogen (N.sub.2) gas of 30.degree. C. was
supplied into the mist filter main body 350 at 20 slm and a
pressure of an outlet side of the mist filter main body 350 was set
as 13300 Pa. The pressure loss was 1500 Pa (see FIG. 8), and a
N.sub.2 gas of 30.degree. C. arrived at 150.degree. C. at a fourth
plate among a first plate of the first plates 320, a first plate of
the second plates 330, a second plate of the first plates 320, and
a second plate of the second plates 330 (i.e., the second plate of
the second plates 330) (see FIG. 9). The analysis was performed to
satisfy the condition that, while different from an actual
condition, was more unfavorable than the actual condition.
[0049] When the mist filter 300 is installed at the gas supply pipe
232a between the evaporator 271a and the gas filter 272a (see FIG.
2), the liquid source that cannot be easily evaporated or the
droplets generated due to bad evaporation when the evaporation flow
rate is large collide with the wall surface (the plate section 328)
of the first plate 320 and the wall surface (the plate section 338)
of the second plate 330 in the mist filter 300 having a sufficient
calorie and are reheated and evaporated. Then, the droplets due to
bad evaporation or the particles generated in the evaporator 271a
and the mist filter 300, which minutely remain, are collected by
the gas filter 272a just before the process chamber 201. The mist
filter 300 functions to assist the evaporation, and supply a
reaction gas with no droplets or particles generated due to bad
evaporation into the process chamber 201 to perform the processing
such as good film-forming or the like. In addition, the mist filter
300 can function to assist the gas filter 272a and suppress the
clogging of the gas filter 272a to reduce maintenance of the gas
filter 272a or lengthen a filter exchange period of the gas filter
272a.
[0050] As described above, the first plate 320 includes the flat
plate section 328 and the outer circumferential section 329
disposed at the outer circumference of the plate section 328, and
the second plate 330 includes the flat plate section 338 and the
outer circumferential section 339 disposed at the outer
circumference of the plate section 338 (see FIGS. 4 and 5).
[0051] In addition, the end plate 310 also includes a flat plate
318 and an outer circumferential section 319 disposed at an outer
circumference of the plate 318, and the end plate 340 also includes
a flat plate 348 and an outer circumferential section 349 disposed
at an outer circumference of the plate 348 (see FIGS. 4 and 5).
Further, spaces 323, 333, 313 and 343 are disposed inside the outer
circumferential sections 329, 339, 319 and 349, respectively (see
FIGS. 4, 5, and 10A). In addition, the end plate 310, the end plate
340, the first plate 320 and the second plate 330 are adhered to
each other, for example, by welding at the outer circumferential
sections 319, 349, 329 and 339 thereof to be hermetically connected
to each other. Further, while the above-mentioned mist filter 300
is configured to include the first plate 320 and the second plate
330, the mist filter may include three or more plates having
different formation positions of holes.
[0052] In the above-mentioned embodiment, no member is installed in
the spaces 313, 323, 333 and 343 (see FIG. 10A). However, when the
pressure loss of the entire mist filter main body 350 is within an
allowable range, a sinter metal or the like may be filled in the
spaces 313, 323, 333 and 343. The filled sintered metal is a
material that can efficiently transfer the heat heated from the
outside of the mist filter main body 350, and may have any shape
such as a spherical shape, a granular shape, a non-linear shape, or
the like, as long as the material can be filled into the spaces
313, 323, 333 and 343. Hereinafter, a variant of the
above-mentioned embodiment will be described.
[0053] For example, as shown in FIG. 10B, sintered metals 314, 324
and 334 having a spherical shape such as a metal bowl, or the like,
may be filled in the spaces 313, 323, and 333 (343). Since the size
of the sphere and the pressure loss have a correlation, the size of
the sphere is selected according to its purpose.
[0054] In addition, as shown in FIG. 10C, sintered metals 315, 325
and 335 having a granular shape may be filled in the spaces 313,
323, and 333 (343). The sintered metal having the granular shape
has a size smaller than that of the sintered metal having the
spherical shape.
[0055] Further, as shown in FIG. 11A, sintered metals 316, 326 and
336 used in the gas filter or the like may be filled in the spaces
313, 323, and 333 (343).
[0056] In addition, as shown in FIG. 11B, the sintered metal 326
used in the gas filter may be filled in the space 323 only, and no
metal may be filled in the spaces 313, 333 and 343. A metal
particle size and a fiber form before sintering of the sintered
metal used in the gas filter are determined by the size of the
collected particles. Since a shape that can collect more fine
particles is densified, the pressure loss is also increased.
Accordingly, it may be more effective and preferable for the
sintered metal to be selectively filled into some of the spaces
313, 323, 333 and 343, rather than all of the spaces 313, 323, 333
and 343.
[0057] Further, as shown in FIG. 11C, as the plate section 328 of
the first plate 320 has the holes 322 disposed at only one side of
the outer circumference (a portion near the outer circumference) of
the plate section 328 and the plate section 338 of the second plate
330 has the holes 332 disposed at only the other side of the outer
circumference (a portion near the outer circumference and a
position not overlapping the holes 322) of the plate section 338,
the gas path 370 may be longer in comparison with the
above-mentioned embodiment in which the holes 322 are disposed near
the outer circumference of the plate section 328 and the holes 332
are disposed near the center of the plate section 338. In addition,
in the embodiment, the same plates are used as the first plate 320
and the second plate 330 but may be stacked not to overlap the
holes.
[0058] In addition, as shown in FIG. 12A, the mist filter main body
350 includes an outer vessel 380 having a cylindrical shape, an
inner member 385, and a filling member 386 such as a sintered metal
or the like filled in a gas path 382 disposed between the outer
vessel 380 and the inner member 385. As the gas path 382 disposed
between the outer vessel 380 and the inner member 385 is filled
with the filling member 386 such as the sintered metal or the like,
the entire mist filter main body 350 may be integrated such that
the heat can be effectively transferred to the inner member 385.
The outer vessel 380 and the inner member 385 may be made of,
preferably, a metal member, and more preferably, stainless used
steel (SUS).
[0059] In addition, as shown in FIG. 12B, the mist filter main body
350 includes the outer vessel 380 having a cylindrical shape, the
inner member 385, and the filling member 386 such as the sintered
metal or the like filled in the gas path 382 disposed between the
outer vessel 380 and the inner member 385. In a structure shown in
FIG. 12A, while the entire gas path 382 disposed between the outer
vessel 380 and the inner member 385 is filled with the filling
member 386 such as the sintered metal or the like, in a structure
shown in FIG. 12B, a space between a side surface 389 of the
cylindrical outer vessel 380 and the inner member 385 in the gas
path 382 disposed between the outer vessel 380 and the inner member
385 is filled with the filling member 386, and a space between an
upper surface and a lower surface of the cylindrical outer vessel
380 and the inner member 385 is not filled with the filling member
386. Even in this case, the entire mist filter main body 350 may be
integrated such that the heat can be effectively transferred to the
inner member 385. The outer vessel 380 and the inner member 385 may
be made of, preferably, a metal member, and more preferably,
stainless used steel (SUS).
[0060] In a variant of the above-mentioned embodiment, stainless
used steel (SUS) may be used as the sintered metal filled in the
spaces 313, 323, 333 and 343 or the gas path 382. Otherwise, nickel
(Ni) may be used. In addition, a Teflon (a registered
trademark)-based material or ceramics may be used instead of the
sintered metal.
[0061] In addition, as shown in FIG. 2, the pipe 232a is installed
between the evaporator 271a and the mist filter 300, and the
evaporator 271a and the mist filter 300 are separately installed.
Since the process chamber 201 is reduced in pressure and the mist
filter 300 is installed closer to the process chamber 201 than the
evaporator 271a, the mist filter 300 is installed at a lower
pressure side than the evaporator 271a. Since the gas flows toward
the low pressure side, separation of the evaporator 271a and the
mist filter 300 may provide a fore flow period of the gas from the
evaporator 271a toward the mist filter 300. As a result, the gas
can collide with the plate 320 and the plate 330 in the mist filter
300 at a higher flow velocity.
[0062] Further, as shown in FIG. 2, the mist filter 300 is
installed at a downstream side of the evaporator 271a, the gas
filter 272a is installed at a downstream side thereof, and the gas
filter 272a is connected to the process chamber 201 via the pipe
232a. The mist filter 300 and the gas filter 272a may be installed
as close to the process chamber 201 as possible. This is because
the pressure in the mist filter 300 can be further reduced due to
the pressure loss of the pipe 232a from the evaporator 271a to the
process chamber 201 as they are installed near the process chamber
201. As the pressure in the mist filter 300 is further reduced, the
evaporation can be easily performed and the bad evaporation can be
suppressed.
[0063] The substrate processing apparatus of the exemplary
embodiment of the present invention will be described with
reference to the accompanying drawings. The substrate processing
apparatus is exemplarily configured as a semiconductor
manufacturing apparatus configured to perform a film-forming
process, which is a substrate processing process of a method of
manufacturing an integrated circuit (IC) serving as a semiconductor
device. In addition, hereinafter, the case in which a batch type
vertical apparatus (which may hereinafter be simply referred to as
a processing apparatus) configured to perform oxidation,
nitridation, diffusion processing or CVD processing on a substrate
is used as the substrate processing apparatus will be
described.
[0064] FIG. 13 is a schematic configuration view of a vertical
processing furnace of the substrate processing apparatus of the
embodiment, showing a processing furnace 202 in a longitudinal
cross-sectional view, and FIG. 14 is a schematic configuration view
of the vertical processing furnace of the substrate processing
apparatus of the embodiment, showing the processing furnace 202 in
a horizontal cross-sectional view. FIG. 15 shows a configuration of
a controller included in the substrate processing apparatus shown
in FIG. 13.
[0065] As shown in FIG. 13, the processing furnace 202 includes a
heater 207 serving as a heating unit (a heating mechanism). The
heater 207 has a cylindrical shape, and is supported by a heater
base (not shown) serving as a holding plate to be vertically
installed. A reaction tube 203 constituting a reaction vessel (a
processing vessel) is installed concentrically with the heater 207
inside the heater 207.
[0066] A seal cap 219 serving as a furnace port cover configured to
hermetically seal the lower end opening of the reaction tube 203 is
installed under the reaction tube 203. The seal cap 219 abuts a
lower end of the reaction tube 203 from a lower side in a vertical
direction. The seal cap 219 is made of a metal such as stainless
steel or the like, and has a disc shape. An O-ring 220 serving as a
seal member configured to abut the lower end of the reaction tube
203 is installed at the upper surface of the seal cap 219. A rotary
mechanism 267 configured to rotate the boat is installed at the
seal cap 219 opposite to the process chamber 201. A rotary shaft
255 of the rotary mechanism 267 passes through the seal cap 219 to
be connected to a boat 217 (to be described below), and is
configured to rotate the boat 217 to rotate the wafer 200. The seal
cap 219 is configured to be raised and lowered in the vertical
direction by a boat elevator 115 serving as an elevation mechanism
vertically installed at the outside of the reaction tube 203, and
thus the boat 217 can be loaded and unloaded into/from the inside
of the process chamber 201.
[0067] The boat 217 serving as a substrate holding unit (a holder)
is vertically installed at the seal cap 219 via a quartz cap 218
serving as an insulating member. The quartz cap 218 is a holding
body made of a heat resistance material such as quartz, silicon
carbide, or the like, serving as an insulating section, and
configured to hold the boat. The boat 217 is made of a heat
resistance material such as quartz, silicon carbide, or the like,
and configured to concentrically support the wafers 200 in a
horizontal posture and in a tube axis direction in a
multi-stage.
[0068] A nozzle 249a and a nozzle 249b are installed in the process
chamber 201 and under the reaction tube 203 to pass through the
reaction tube 203. The gas supply pipe 232a and a gas supply pipe
232b are connected to the nozzle 249a and the nozzle 249b,
respectively. As described above, the two nozzles 249a and 249b and
the two gas supply pipes 232a and 232b are installed at the
reaction tube 203 so that multiple types of gases can be supplied
into the process chamber 201. In addition, as will be described
below, inert gas supply pipes 232c and 232e or the like are
connected to the gas supply pipe 232a and the gas supply pipe 232b,
respectively.
[0069] The evaporator 271a serving as an evaporating apparatus (an
evaporating unit) and configured to evaporate the liquid source to
generate an evaporated gas serving as a source gas, the mist filter
300, the gas filter 272a, a mass flow controller (MFC) 241a serving
as a flow rate controller (a flow rate control unit), and a valve
243a serving as an opening/closing valve are installed at the gas
supply pipe 232a in sequence from the upstream direction. As the
valve 243a is opened, the evaporated gas generated in the
evaporator 271a is supplied into the process chamber 201 via the
nozzle 249a. A vent line 232d connected to an exhaust pipe 231 (to
be described below) is connected to the gas supply pipe 232a
between the mass flow controller 241a and the valve 243a.
[0070] A valve 243d serving as an opening/closing valve is
installed at the vent line 232d to supply the source gas to the
vent line 232d via the valve 243d when the source gas (to be
described below) is not supplied into the process chamber 201. As
the valve 243a is closed and the valve 243d is opened, the supply
of the evaporated gas into the process chamber 201 can be stopped
while maintaining generation of the evaporated gas in the
evaporator 271a. While a predetermined time is needed to stably
generate the evaporated gas, supply/stoppage of the evaporated gas
into the process chamber 201 can be switched for an extremely short
time by a switching operation of the valve 243a and the valve 243d.
In addition, an inert gas supply pipe 232c is connected to the gas
supply pipe 232a at a downstream side of the valve 243a. A mass
flow controller 241c serving as a flow rate controller (a flow rate
control unit) and a valve 243c serving as an opening/closing valve
are installed at the inert gas supply pipe 232c in sequence from
the upstream direction. The heater 150 is installed at the gas
supply pipe 232a, the inert gas supply pipe 232c, and the vent line
232d to prevent reliquefaction.
[0071] The above-mentioned nozzle 249a is connected to the tip
section of the gas supply pipe 232a. The nozzle 249a is installed
to be raised in an arc-shaped space between the inner wall of the
reaction tube 203 and the wafer 200 from a lower portion to an
upper portion of the inner wall of the reaction tube 203 upward in
the stacking direction of the wafers 200. The nozzle 249a is
constituted as an L-shaped long nozzle. A gas supply hole 250a
configured to supply a gas is installed at a side surface of the
nozzle 249a. The gas supply hole 250a is opened toward a center of
the reaction tube 203. The gas supply holes 250a are installed from
the lower portion to the upper portion of the reaction tube 203,
have the same opening area, and are disposed at the same opening
pitch.
[0072] A first gas supply system is mainly constituted by the gas
supply pipe 232a, the vent line 232d, the valves 243a and 243d, the
mass flow controller 241a, the evaporator 271a, the mist filter
300, the gas filter 272a, and the nozzle 249a. In addition, a first
inert gas supply system is mainly constituted by the inert gas
supply pipe 232c, the mass flow controller 241c, and the valve
243c.
[0073] An ozonizer 500 serving as an apparatus for generating ozone
(O.sub.3) gas, a valve 243f, a mass flow controller (MFC) 241b
serving as a flow rate controller (a flow rate control unit), and a
valve 243b serving as an opening/closing valve are installed at the
gas supply pipe 232b in sequence from the upstream direction. An
upstream side of the gas supply pipe 232b is connected to an oxygen
gas supply source (not shown) configured to supply oxygen (O.sub.2)
gas. The O.sub.2 gas supplied into the ozonizer 500 becomes the
O.sub.3 gas in the ozonizer 500 to be supplied into the process
chamber 201. A vent line 232g connected to the exhaust pipe 231 (to
be described below) is connected to the gas supply pipe 232b
between the ozonizer 500 and the valve 243f. A valve 243g serving
as an opening/closing valve is installed at the vent line 232g to
supply the source gas to the vent line 232g via the valve 243g when
the O.sub.3 gas is not supplied into the process chamber 201 (to be
described later). As the valve 243f is closed and the valve 243g is
opened, the supply of the O.sub.3 gas into the process chamber 201
can be stopped while maintaining generation of the O.sub.3 gas by
the ozonizer 500. While a predetermined time is needed to stably
refine the O.sub.3 gas, the supply/stoppage of the O.sub.3 gas into
the process chamber 201 can be switched for an extremely short time
by the switching operation of the valve 243f and the valve 243g. In
addition, an inert gas supply pipe 232e is connected to the gas
supply pipe 232b at the downstream side of the valve 243b. A mass
flow controller 241e serving as a flow rate controller (a flow rate
control unit) and a valve 243e serving as an opening/closing valve
are installed at the inert gas supply pipe 232e in sequence from
the upstream direction.
[0074] The above-mentioned nozzle 249b is connected to the tip
section of the gas supply pipe 232b. The nozzle 249b is installed
to be raised and lowered in an arc-shaped space between the inner
wall of the reaction tube 203 and the wafer 200 from the lower
portion to the upper portion of the inner wall of the reaction tube
203 upward in the stacking direction of the wafers 200. The nozzle
249b is constituted as an L-shaped long nozzle. A gas supply hole
250b configured to supply a gas is installed at a side surface of
the nozzle 249b. The gas supply hole 250b is opened toward the
center of the reaction tube 203. The gas supply holes 250b are
installed from the lower portion to the upper portion of the
reaction tube 203, have the same opening area, and are disposed at
the same opening pitch.
[0075] A second gas supply system is mainly constituted by the gas
supply pipe 232b, the vent line 232g, the ozonizer 500, the valves
243f, 243g and 243b, the mass flow controller 241b, and the nozzle
249b. In addition, a second inert gas supply system is mainly
constituted by the inert gas supply pipe 232e, the mass flow
controller 241e, and the valve 243e.
[0076] For example, a zirconium source gas, i.e., a gas containing
zirconium (Zr) (a zirconium-containing gas), which is a first
source gas, is supplied from the gas supply pipe 232a into the
process chamber 201 via the evaporator 271a, the mist filter 300,
the gas filter 272a, the mass flow controller 241a, the valve 243a,
and the nozzle 249a. For example,
tetrakis(ethylmethylamino)zirconium (TEMAZ) may be used as the
zirconium-containing gas. Tetrakis(ethylmethylamino)zirconium
(TEMAZ) is a liquid at a normal temperature and a normal
pressure.
[0077] A gas containing oxygen (O) (an oxygen-containing gas), for
example, O.sub.2 gas, is supplied into the gas supply pipe 232b,
becomes O.sub.3 gas in the ozonizer 500, and is supplied into the
process chamber 201 via the valve 243f, the mass flow controller
241b, and the valve 243b as an oxidizing gas (oxidant). The O.sub.2
gas serving as the oxidizing gas may be supplied into the process
chamber 201 without generating the O.sub.3 gas in the ozonizer
500.
[0078] For example, nitrogen (N.sub.2) gas is supplied from the
inert gas supply pipes 232c and 232e into the process chamber 201
via the mass flow controllers 241c and 241e, the valves 243c and
243e, the gas supply pipes 232a and 232b, the nozzles 249a and
249b.
[0079] The exhaust pipe 231 configured to exhaust an atmosphere in
the process chamber 201 is installed in the reaction tube 203. A
vacuum pump 246 serving as a vacuum exhaust apparatus is connected
to the exhaust pipe 231 via a pressure sensor 245 serving as a
pressure detector (a pressure detection unit) configured to detect
the pressure in the process chamber 201 and an auto pressure
controller (APC) valve 244 serving as a pressure regulator (a
pressure regulation unit) to perform vacuum exhaust so that the
pressure in the process chamber 201 arrives at a predetermined
pressure (a vacuum level). In addition, the APC valve 244 is an
opening/closing valve configured to open and close the valve to
perform the vacuum exhaust and stop the vacuum exhaust of the
inside of the process chamber 201 and adjust the valve opening
angle to regulate the pressure. An exhaust system is mainly
constituted by the exhaust pipe 231, the APC valve 244, the vacuum
pump 246, and the pressure sensor 245.
[0080] A temperature sensor 263 serving as a temperature detector
is installed in the reaction tube 203, and an electrical connection
state to the heater 207 is controlled based on temperature
information detected by the temperature sensor 263 so that the
temperature in the process chamber 201 arrives at a desired
temperature distribution. The temperature sensor 263 has an L shape
similar to the nozzles 249a and 249b, and is installed along the
inner wall of the reaction tube 203.
[0081] As shown in FIG. 15, a controller 121 serving as a control
unit (a control means) is constituted as a computer including a
central processing unit (CPU) 121a, a random access memory (RAM)
121b, a memory device 121c, and an I/O port 121d. The RAM 121b, the
memory device 121c and the I/O port 121d are configured to exchange
data with the CPU 121a via an internal bus. An input/output device
122 constituted as, for example, a touch panel or the like is
connected to the controller 121. In addition, an external memory
device (a recording medium) 123 on which a program (to be described
later) is stored is connectable to the controller 121.
[0082] The memory device 121c is constituted by, for example, a
flash memory, a hard disk drive (HDD), or the like. A control
program configured to control an operation of the substrate
processing apparatus or a process recipe on which a sequence or
condition of substrate processing (to be described later) is
disclosed is readably stored in the memory device 121c. In
addition, the control program or the process recipe can be stored
in the memory device 121c by storing the control program or the
process recipe in an external memory device 123 and connecting the
external memory device 123 to the controller 121. Further, the
process recipe is assembled to obtain a predetermined result by
causing the controller 121 to perform the sequences of the
following substrate processing process, and functions as a program.
Hereinafter, the process recipe or the control program is also
generally and simply referred to as a program. In addition, the
case in which the terms of the program are recited in the
description may include the case in which only the process recipe
is included, the case in which only the control program is
included, and the case in which both are included. Further, the RAM
121b is constituted as a memory region (a work area) in which a
program or data read by the CPU 121a is temporarily held.
[0083] The I/O port 121d is connected to the mass flow controllers
241a, 241b, 241c and 241e, the valves 243a, 243b, 243c, 243d, 243e,
243f and 243g, the evaporator 271a, the mist filter 300, the
ozonizer 500, the pressure sensor 245, the APC valve 244, the
vacuum pump 246, the heaters 150 and 207, the temperature sensor
263, the boat rotary mechanism 267, the boat elevator 115, and so
on.
[0084] The CPU 121a is configured to read and perform the control
program from the memory device 121c and read the process recipe
from the memory device 121c according to an input of an operation
command from the input/output device 122. Then, the CPU 121a
performs a flow rate control operation on various gases by the mass
flow controllers 241a, 241b, 241c and 241e, an opening/closing
operation on the valves 243a, 243b, 243c, 243d, 243e, 243f and
243g, a pressure regulation operation based on opening/closing of
the APC valve 244 and the pressure sensor 245, a temperature
control operation on the heater 150, a temperature control
operation on the heater 207 based on the temperature sensor 263,
control on the evaporator 271a, the mist filter 300 (the heater
360) and the ozonizer 500, start/stoppage on the vacuum pump 246, a
rotational speed adjustment operation on the boat rotary mechanism
267, an elevation operation on the boat elevator 115, or the like,
according to the read process recipe.
[0085] Next, a sequence example of forming an insulating film on a
substrate, which is one process of processes of manufacturing a
semiconductor device using a processing furnace of the
above-mentioned substrate processing apparatus will be described
with reference to FIGS. 16 and 17. In addition, in the following
description, operations of the respective parts constituting the
substrate processing apparatus are controlled by the controller
121.
[0086] In a chemical vapor deposition (CVD) method, for example,
multiple types of gases including a plurality of elements
constituting a film are simultaneously supplied. In addition, a
film-forming method of alternately supplying multiple types of
gases including a plurality of elements constituting a film is also
provided.
[0087] First, when the wafers 200 are charged into the boat 217
(wafer charging) (see step S101 in FIG. 16), as shown in FIG. 13,
the boat 217 supporting the wafers 200 is raised by the boat
elevator 115 to be loaded into the process chamber 201 (boat
loading) (see step S102 in FIG. 16). In this state, the seal cap
219 hermetically seals the lower end of the reaction tube 203 via
the O-ring 220.
[0088] The inside of the process chamber 201 is vacuum-exhausted by
the vacuum pump 246 to a desired pressure (a vacuum level). Here,
the pressure in the process chamber 201 is measured by the pressure
sensor 245, and the APC valve 244 is feedback-controlled based on
the measured pressure (pressure regulation) (see step S103 in FIG.
16). In addition, the inside of the process chamber 201 is heated
by the heater 207 to a desired temperature. Here, an electrical
conduction state to the heater 207 is feedback-controlled based on
temperature information detected by the temperature sensor 263 such
that the inside of the process chamber 201 arrives at a desired
temperature distribution (temperature control) (see step S 103 in
FIG. 16). Next, the boat 217 is rotated by the rotary mechanism 267
to rotate the wafer 200.
[0089] Next, as the TEMAZ gas and O.sub.3 gas are supplied into the
process chamber 201, an insulating film forming process of forming
a ZrO film serving as an insulating film is performed (see step
S104 in FIG. 16). The following four steps are sequentially
performed in the insulating film forming process.
[0090] (Insulating Film Forming Process)<Step S105>
[0091] In step S105 (see FIGS. 16 and 17, a first process), first,
the TEMAZ gas flows. As the valve 243a of the gas supply pipe 232a
is opened and the valve 243d of the vent line 232d is closed, the
TEMAZ gas flows into the gas supply pipe 232a via the evaporator
271a, the mist filter 300 and the gas filter 272a. The TEMAZ gas
flowing through the gas supply pipe 232a is flow-rate-controlled by
the mass flow controller 241a. The flow-rate-controlled TEMAZ gas
is supplied into the process chamber 201 from the gas supply hole
250a of the nozzle 249a and exhausted from the gas exhaust pipe
231. Here, simultaneously, the valve 243c is opened and an inert
gas such as N.sub.2 gas or the like flows into the inert gas supply
pipe 232c. The N.sub.2 gas flowing through the inert gas supply
pipe 232c is flow-rate-controlled by the mass flow controller 241c.
The flow-rate-controlled N.sub.2 gas is supplied into the process
chamber 201 and exhausted from the gas exhaust pipe 231 with the
TEMAZ gas. The TEMAZ gas is supplied into the process chamber 201
to be reacted with the wafer 200 to form a zirconium-containing
layer on the wafer 200. In addition, before performing step S105,
the operation of the heater 360 of the mist filter 300 is
controlled to maintain the temperature of the mist filter main body
350 at a desired temperature.
[0092] Here, the APC valve 244 is appropriately adjusted to
regulate the pressure in the process chamber 201 to a pressure
within a range of, for example, 50 to 400 Pa. A supply flow rate of
the TEMAZ gas controlled by the mass flow controller 241a is set to
a flow rate within a range of, for example, 0.1 to 0.5 g/min. A
time in which the wafer 200 is exposed to the TEMAZ gas, i.e., a
gas supply time (an irradiation time) is set to a time within a
range of, for example, 30 to 240 seconds. Here, the temperature of
the heater 207 is set such that the temperature of the wafer 200 is
a temperature within a range of, for example, 150 to 250.degree.
C.
[0093] <Step S106)>
[0094] In step S106 (FIGS. 16 and 17, a second process), after the
zirconium-containing layer is formed, the valve 243a is closed and
the valve 243d is opened to stop the supply of the TEMAZ gas into
the process chamber 201, and the TEMAZ gas flows through the vent
line 232d. Here, the inside of the process chamber 201 is
vacuum-exhausted by the vacuum pump 246 in a state in which the APC
valve 244 of the gas exhaust pipe 231 is open, and the TEMAZ gas
that is not reacted or has contributed to formation of the
zirconium-containing layer and remains in the process chamber 201
is removed from the process chamber 201. In addition, here, supply
of the N.sub.2 gas into the process chamber 201 is maintained in a
state in which the valve 243c is open. Accordingly, an effect of
removing the TEMAZ gas that is not reacted or has contributed to
formation of the zirconium-containing layer and remains in the
process chamber 201 from the inside of the process chamber 201 is
improved. A rare gas such as Ar gas, He gas, Ne gas, Xe gas, or the
like, in addition to the N.sub.2 gas may be used as the inert
gas.
[0095] <Step S107)>
[0096] In step S107 (FIGS. 16 and 17, a third process), after
removing the remaining gas in the process chamber 201, the O.sub.2
gas flows into the gas supply pipe 232b. The O.sub.2 gas flowing
through the gas supply pipe 232b becomes O.sub.3 gas in the
ozonizer 500. As the valve 243f and the valve 243b of the gas
supply pipe 232b are opened and the valve 243g of the vent line
232g is closed, the O.sub.3 gas flowing through the gas supply pipe
232b is flow-rate-controlled by the mass flow controller 241b,
supplied into the process chamber 201 from the gas supply hole 250b
of the nozzle 249b, and exhausted from the gas exhaust pipe 231.
Here, simultaneously, the valve 243e is opened, and the N.sub.2 gas
flows into the inert gas supply pipe 232e. The N.sub.2 gas is
supplied into the process chamber 201 and exhausted from the gas
exhaust pipe 231 with the O.sub.3 gas. As the O.sub.3 gas is
supplied into the process chamber 201, the zirconium-containing
layer formed on the wafer 200 is reacted with the O.sub.3 gas to
form a ZrO layer.
[0097] When the O.sub.3 gas flows, the APC valve 244 is
appropriately adjusted such that the pressure in the process
chamber 201 arrives at a pressure within a range of, for example,
50 to 400 Pa. A supply flow rate of the O.sub.3 gas controlled by
the mass flow controller 241b is set to a flow rate within a range
of, for example, 10 to 20 slm. A time in which the wafer 200 is
exposed to the O.sub.3 gas, i.e., a gas supply time (an irradiation
time) is set to a time within a range of, for example, 60 to 300
seconds. Here, the temperature of the heater 207 is set such that
the temperature of the wafer 200 is set to a temperature within a
range of 150 to 250.degree. C. similar to step 105.
[0098] <Step S108)>
[0099] In step S108 (FIGS. 16 and 17, a fourth process), the valve
243b of the gas supply pipe 232b is closed and the valve 243g is
opened to stop the supply of the O.sub.3 gas into the process
chamber 201, and the O.sub.3 gas flows through the vent line 232g.
Here, the inside of the process chamber 201 is vacuum-exhausted by
the vacuum pump 246 in a state in which the APC valve 244 of the
gas exhaust pipe 231 is open, the O.sub.3 gas that is not reacted
or has contributed to oxidation and remains in the process chamber
201 is removed from the process chamber 201. In addition, here,
supply of the N.sub.2 gas into the process chamber 201 is
maintained in a state in which the valve 243e is open. Accordingly,
an effect of removing the O.sub.3 gas that is not reacted or has
contributed to oxidation and remains in the process chamber 201
from the inside of the process chamber 201 is increased. In
addition to the O.sub.3 gas, the O.sub.2 gas or the like may be
used as the oxygen-containing gas.
[0100] As the above-mentioned steps S105 to S108 are set as one
cycle and the cycle is performed at least one time (step S109), an
insulating film containing zirconium and oxygen and having a
predetermined film thickness, i.e., a ZrO film, can be formed on
the wafer 200. In addition, the above-mentioned cycle may be
repeated a plurality of times. Accordingly, a deposition film of
the ZrO film is formed on the wafer 200.
[0101] After forming the ZrO film, the valve 243a of the gas supply
pipe 232a is closed, the valve 243b of the gas supply pipe 232b is
closed, the valve 243c of the inert gas supply pipe 232c is opened,
the valve 243e of the inert gas supply pipe 232e is opened, and the
N.sub.2 gas flows into the process chamber 201. The N.sub.2 gas
serves as a purge gas, and thus the inside of the process chamber
201 is purged with an inert gas to remove the gas remaining in the
process chamber 201 from the process chamber 201 (purge, step
S110). After that, the atmosphere in the process chamber 201 is
replaced with the inert gas, and the pressure in the process
chamber 201 returns to a normal pressure (return to an atmospheric
pressure, step S111).
[0102] After that, the seal cap 219 is lowered by the boat elevator
115 and a lower end of a manifold 209 is opened, and
simultaneously, the processed wafer 200, which is held by the boat
217, is unloaded from the lower end of the manifold 209 to the
outside of the reaction tube 203 (boat unloading, step S112). Next,
the processed wafer 200 is discharged from the boat 217 (wafer
discharge, step S112).
Example 1
[0103] The film-forming of the ZrO film was performed using the
substrate processing furnace of the above-mentioned embodiment. In
addition, for the purpose of comparison, the film-forming of the
ZrO film was performed without installing the mist filter 300. In
the configuration in which the mist filter 300 was not installed,
the film-forming was performed under conditions in which an
evaporation source material TEMAZ was 0.45 g, a supply time was 300
sec, and a cycle number was 75 cycles. Step coverage in the
film-forming was 81%. On the other hand, in the configuration in
which the mist filter 300 was installed, since an evaporation flow
rate could be increased, when the film-forming was performed under
conditions in which the evaporation source material TEMAZ was 3 g,
the supply time was 60 sec, and the cycle number was 75 cycles, the
step coverage was 91%, which led to improvement of the step
coverage. In addition, generation of the particles could be
suppressed.
[0104] As described above specifically, when the liquid source that
cannot be easily evaporated is used or a large evaporation flow
rate is needed in the exemplary embodiment of the present
invention, the bad evaporation can be suppressed. As a result, the
following effects can be obtained.
[0105] (1) The gas filter clogging can be suppressed, and the
maintenance can be reduced or the filter exchange period can be
increased.
[0106] (2) The film-forming in which the particles are removed or
suppressed can be performed.
[0107] (3) Step coverage of the pattern wafer is improved.
[0108] While the film-forming of the ZrO film has been performed in
the above-mentioned embodiment, the technique using the mist filter
300 may be applied to other types of films, for example, a high
permittivity (high-k) film such as ZrO, HfO, or the like, or a kind
of film using an evaporator (in particular, a kind of film using a
gas that can easily cause bad evaporation or requiring a large flow
rate). In particular, the technique using the mist filter 300 may
be applied to a kind of film using liquid source having a vapor
pressure.
[0109] The technique using the mist filter 300 may be applied to
the case of forming a metal carbide film of a metal nitride film
including at least one metal element such as titanium (Ti),
tantalum (Ta), cobalt (Co), tungsten (W), molybdenum (Mo),
ruthenium (Ru), yttrium (Y), lanthanum (La), zirconium (Zr),
hafnium (Hf), nickel (Ni), or the like, or a silicide film in which
silicon (Si) is added to the above-mentioned film. Here, titanium
chloride (TiCl.sub.4), tetrakis(dimethylamino)titanium (TDMAT,
Ti[N(CH.sub.3).sub.2].sub.4), tetrakis(diethylamino)titanium
(TDEAT, Ti[N(CH.sub.2CH.sub.3).sub.2].sub.4), or the like, may be
used as a Ti-containing source material, tantalum chloride
(TaCl.sub.4) or the like may be used as a Ta-containing source
material, Co(AMD)[(tBu)NC(CH.sub.3)N(tBu).sub.2Co] or the like may
be used as a Co-containing source material, tungsten fluoride
(WF.sub.6) or the like may be used as a W-containing source
material, molybdenum chloride (MoCl.sub.3 or MoCl.sub.5) or the
like may be used as a Mo-containing source material,
2,4-dimethlypentadienyl(ethylcyclopentadienyl)ruthenium[Ru(EtCp)(C.sub.7H-
.sub.11)] or the like may be used as a Ru-containing source
material, trisethylcyclopentadienylyttrium
[Y(C.sub.2H.sub.5C.sub.5H.sub.4).sub.3] or the like may be used as
an Y-containing source material,
trisisopropylcyclopentadienyllanthanum[La(i-C.sub.3H.sub.7C.sub.5H.sub.4)-
.sub.3] or the like may be used as a La-containing source material,
tetrakis(ethylmethylamino)zirconium[Zr(N[CH.sub.3(C.sub.2H.sub.5)].sub.4)-
] or the like may be used as a Zr-containing source material,
tetrakis(ethylmethylamino)hafnium
[Hf(N[CH.sub.3(C.sub.2H.sub.5)].sub.4)] or the like may be used as
a Hf-containing source material, nickelamidinate (NiAMD),
cyclopentadienylallylnickel (C.sub.5H.sub.5NiC.sub.3H.sub.5),
methylcyclopentadienylallylnickel[(CH.sub.3)C.sub.5H.sub.4NiC.sub.3H.sub.-
5], ethylcyclopentadienylallylnickel
[(C.sub.2H.sub.5)C.sub.5H.sub.4NiC.sub.3H.sub.5],
Ni(PF.sub.3).sub.4 or the like may be used as a Ni-containing
source material, and tetrachlorosilane (SiCl.sub.4),
hexachlorodisilane (Si.sub.2Cl.sub.6), dichlorosilane
(SiH.sub.2Cl.sub.2), trisdimethyl aminosilane
(SiH[N(CH.sub.3).sub.2].sub.3), bis-tertiary-butyl-amino-silane
(H.sub.2Si[HNC(CH.sub.3].sub.2) or the like may be used as a
Si-containing source material.
[0110] TiCN, TiAlC, or the like may be used as a metal carbide film
containing Ti. For example, TiCl.sub.4,
Hf[C.sub.5H.sub.4(CH.sub.3)].sub.2(CH.sub.3).sub.2 and NH.sub.3 may
be used as a source material of TiCN. In addition, for example,
TiCl.sub.4 and trimethylaluminum (TMA, (CH.sub.3).sub.3Al) may be
used as a source material of TiAlC. Further, TiCl.sub.4, TMA and
propylene (C.sub.3H.sub.6) may be used as a source material of
TiAlC. Furthermore, TiAlN or the like may be used as a metal
nitride film containing Ti. For example, TiCl.sub.4, TMA and
NH.sub.3 may be used as a source material of TiAlN.
[0111] According to the present invention, an amount of particles
generated when liquid source is used can be suppressed, and the
liquid source can be efficiently evaporated to be supplied into a
process chamber.
[0112] (Exemplary Modes of the Invention)
[0113] Hereinafter, exemplary modes of the present invention will
be supplementarily stated.
[0114] (Supplementary Note 1)
[0115] A method of manufacturing a semiconductor device, including:
(a) loading a substrate into a process chamber; (b) evaporating a
source material by sequentially flowing the source material to an
evaporator and a mist filter including one or more first plates and
one or more second plates; (c) supplying the source material
evaporated in the step (b) into the process chamber to process the
substrate; and (d) unloading the substrate from the process
chamber, wherein each of the one or more first plates includes one
or more first holes, and each of the one or more second plates
includes one or more second holes disposed at different positions
from those of the one or more first holes.
[0116] (Supplementary Note 2)
[0117] The method of manufacturing the semiconductor device
according to Supplementary Note 1, wherein the one or more first
holes are disposed near an outer circumference of each of the one
or more first plates, the one or more second holes are disposed
near a center of each of the one or more second plates, and the one
or more first plates and the one or more second plates are
alternately disposed, and wherein the step (b) includes evaporating
the source material passed through the evaporator by alternately
flowing the source material through the one or more first holes and
the one or more second holes.
[0118] (Supplementary Note 3)
[0119] The method of manufacturing the semiconductor device
according to Supplementary Note 1 or 2, wherein the step (b)
includes evaporating the source material sequentially flown through
the evaporator and the mist filter by further flowing the source
material through a gas filter.
[0120] (Supplementary Note 4)
[0121] A method of manufacturing a substrate, including: (a)
loading a substrate into a process chamber; (b) evaporating a
source material by sequentially flowing the source material to an
evaporator and a mist filter including one or more first plates and
one or more second plates; (c) supplying the source material
evaporated in the step (b) into the process chamber to process the
substrate; and (d) unloading the substrate from the process
chamber, wherein each of the one or more first plates includes one
or more first holes, and each of the one or more second plates
includes one or more second holes disposed at different positions
from those of the one or more first holes.
[0122] (Supplementary Note 5)
[0123] The method of manufacturing the substrate according to
Supplementary Note 4, wherein the one or more first holes are
disposed near an outer circumference of each of the one or more
first plates, the one or more second holes are disposed near a
center of each of the one or more second plates, and the one or
more first plates and the one or more second plates are alternately
disposed, and wherein the step (b) includes evaporating the source
material passed through the evaporator by alternately flowing the
source material through the one or more first holes and the one or
more second holes.
[0124] (Supplementary Note 6)
[0125] The method of manufacturing the semiconductor device
according to Supplementary Note 4 or 5, wherein the step (b)
includes evaporating the source material sequentially flown through
the evaporator and the mist filter by further flowing the source
material through a gas filter.
[0126] (Supplementary Note 7)
[0127] A program performed by a control unit, the program including
the sequences of: (a) loading a substrate into a process chamber;
(b) evaporating a source material by sequentially flowing the
source material to an evaporator and a mist filter including one or
more first plates and one or more second plates; (c) supplying the
source material evaporated in the step (b) into the process chamber
to process the substrate; and (d) unloading the substrate from the
process chamber, wherein each of the one or more first plates
includes one or more first holes, and each of the one or more
second plates includes one or more second holes disposed at
different positions from those of the one or more first holes.
[0128] (Supplementary Note 8)
[0129] The program according to Supplementary Note 7, wherein the
one or more first holes are disposed near an outer circumference of
each of the one or more first plates, the one or more second holes
are disposed near a center of each of the one or more second
plates, and the one or more first plates and the one or more second
plates are alternately disposed, and wherein the step (b) includes
evaporating the source material passed through the evaporator by
alternately flowing the source material through the one or more
first holes and the one or more second holes.
[0130] (Supplementary Note 9)
[0131] The program according to Supplementary Note 7, wherein the
sequence (b) includes evaporating the source material sequentially
flown through the evaporator and the mist filter by further flowing
the source material through a gas filter.
[0132] (Supplementary Note 10)
[0133] A non-transitory computer-readable recording medium on which
a program performed by a control unit is recorded, the program
including the sequences of: (a) loading a substrate into a process
chamber; (b) evaporating a source material by sequentially flowing
the source material to an evaporator and a mist filter including
one or more first plates and one or more second plates; (c)
supplying the source material evaporated in the step (b) into the
process chamber to process the substrate; and (d) unloading the
substrate from the process chamber, wherein each of the one or more
first plates includes one or more first holes, and each of the one
or more second plates includes one or more second holes disposed at
different positions from those of the one or more first holes.
[0134] (Supplementary Note 11)
[0135] The non-transitory computer-readable recording medium
according to Supplementary Note 10, wherein the one or more first
holes are disposed near an outer circumference of each of the one
or more first plates, the one or more second holes are disposed
near a center of each of the one or more second plates, and the one
or more first plates and the one or more second plates are
alternately disposed, and wherein the step (b) includes evaporating
the source material passed through the evaporator by alternately
flowing the source material through the one or more first holes and
the one or more second holes.
[0136] (Supplementary Note 12)
[0137] The non-transitory computer-readable recording medium
according to Supplementary Note 10, wherein the sequence (b)
includes evaporating the source material sequentially flown through
the evaporator and the mist filter by further flowing the source
material through a gas filter.
[0138] (Supplementary Note 13)
[0139] A substrate processing apparatus including: a process
chamber configured to accommodate a substrate; a process gas supply
system configured to supply a process gas into the process chamber;
and an exhaust system configured to exhaust the process chamber,
wherein the process gas supply system includes: an evaporator
configured to receive a source material; and a mist filter disposed
at a downstream side of the evaporator, and including one or more
first plates and one or more second plates, wherein each of the one
or more first plates includes one or more first holes, and each of
the one or more second plates includes one or more second holes
disposed at different positions from those of the one or more first
holes.
[0140] (Supplementary Note 14)
[0141] The substrate processing apparatus according to
Supplementary Note 13, wherein the one or more first holes are
disposed near an outer circumference of each of the one or more
first plates, the one or more second holes are disposed near a
center of each of the one or more second plates, and the one or
more first plates and the one or more second plates are alternately
disposed.
[0142] (Supplementary Note 15)
[0143] The substrate processing apparatus according to
Supplementary Note 13 or 14, wherein the process gas supply system
further includes a gas filter disposed at a downstream side of the
mist filter.
[0144] (Supplementary Note 16)
[0145] The substrate processing apparatus according to
Supplementary Note 15, wherein the evaporator, the mist filter and
the gas filter are separate from one another.
[0146] (Supplementary Note 17)
[0147] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 16, wherein the mist filter further
includes a heater configured to heat the one or more first plates
and the one or more second plates.
[0148] (Supplementary Note 18)
[0149] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 17, wherein each of the one or more first
plates and the one or more second plates includes a metal.
[0150] (Supplementary Note 19)
[0151] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 18, wherein a shape of each of the one or
more first plates is same as that of each of the one or more second
plates except for the one or more first holes and the one or more
second holes.
[0152] (Supplementary Note 20)
[0153] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 19, wherein each of the one or more first
plates and the one or more second plates includes a plate section
including one of the one or more first holes and the one or more
second holes; and an outer circumferential section disposed at an
outer circumference of the plate section, the outer circumferential
section being thicker than the plate section, and
[0154] the outer circumferential section of one of the one or more
first plates is in contact with the outer circumferential section
of one of the one or more second plates adjacent to the outer
circumferential section of the one of the one or more first plates
in a manner that a space is provided between the plate section of
the one of the one or more first plates and the plate section of
the one of the one or more second plates.
[0155] (Supplementary Note 21)
[0156] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 20, wherein a stepped portion is provided
between a side surface of the outer circumferential section and a
side surface of the plate section.
[0157] (Supplementary Note 22)
[0158] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 21, wherein a sintered metal is filled
between the one or more first plates and the one or more second
plates.
[0159] (Supplementary Note 23)
[0160] The substrate processing apparatus according to any one of
Supplementary Notes 13 to 22, wherein the process gas is a
zirconium-containing source material.
[0161] (Supplementary Note 24)
[0162] An evaporation system including: an evaporator configured to
receive a source material; and a mist filter disposed at a
downstream side of the evaporator and including one or more first
plates and one or more second plates, wherein each of the one or
more first plates includes one or more first holes, and each of the
one or more second plates includes one or more second holes
disposed at different positions from those of the one or more first
holes.
[0163] (Supplementary Note 25)
[0164] The evaporation system according to Supplementary Note 24,
wherein the one or more first holes are disposed near an outer
circumference of each of the one or more first plates, the one or
more second holes are disposed near a center of each of the one or
more second plates, and the one or more first plates and the one or
more second plates are alternately disposed.
[0165] (Supplementary Note 26)
[0166] The evaporation system according to Supplementary Note 24 or
25, further including a gas filter disposed at a downstream side of
the mist filter.
[0167] (Supplementary Note 27)
[0168] The evaporation system according to Supplementary Note 26,
the evaporator, the mist filter and the gas filter are separate
from one another.
[0169] (Supplementary Note 28)
[0170] The evaporation system according to any one of Supplementary
Notes 24 to 27, wherein the mist filter further includes a heater
configured to heat the one or more first plates and the one or more
second plates.
[0171] (Supplementary Note 29)
[0172] A mist filter constituted by assembling a plurality of at
least two types of plates including holes disposed at different
positions.
[0173] (Supplementary Note 30)
[0174] The mist filter according to Supplementary Note 29, wherein
the mist filter is constituted by alternately disposing a first
plate in which a plurality of holes are disposed near an outer
circumference thereof and a second plate in which a plurality of
holes are disposed near a center thereof.
[0175] (Supplementary Note 31)
[0176] The mist filter according to Supplementary Notes 29 or 30,
including a heater configured to heat the at least two types of
plates.
[0177] Hereinabove, while various exemplary embodiments of the
present invention have been described, the present invention is not
limited thereto. Accordingly, the scope of the present invention is
limited by only the scopes of the accompanying claims.
* * * * *