U.S. patent application number 13/564102 was filed with the patent office on 2013-09-26 for method of local electro-magnetic field enhancement of terahertz (thz) radiation in sub-wavelength regions and improved coupling of radiation to materials through the use of the discontinuity edge effect.
This patent application is currently assigned to Direct Source International, LLC. The applicant listed for this patent is Alexei Bykhovski, Boris Gelmont, Tatiana Globus, Arthur Weston Lichtenberger, Ramakrishnan Parthasarathy, Nathan Swami, Robert M. Weikle. Invention is credited to Alexei Bykhovski, Boris Gelmont, Tatiana Globus, Arthur Weston Lichtenberger, Ramakrishnan Parthasarathy, Nathan Swami, Robert M. Weikle.
Application Number | 20130248713 13/564102 |
Document ID | / |
Family ID | 39738783 |
Filed Date | 2013-09-26 |
United States Patent
Application |
20130248713 |
Kind Code |
A1 |
Gelmont; Boris ; et
al. |
September 26, 2013 |
METHOD OF LOCAL ELECTRO-MAGNETIC FIELD ENHANCEMENT OF TERAHERTZ
(THZ) RADIATION IN SUB-WAVELENGTH REGIONS AND IMPROVED COUPLING OF
RADIATION TO MATERIALS THROUGH THE USE OF THE DISCONTINUITY EDGE
EFFECT
Abstract
A method and apparatus for enhanced THz radiation coupling to
molecules, includes the steps of depositing a test material near
the discontinuity edges of a slotted member, and enhancing the THz
radiation by transmitting THz radiation through the slots. The
molecules of the test material are illuminated by the enhanced THz
radiation that has been transmitted through the slots, thereby
producing an increased coupling of EM radiation in the THz spectral
range to said material. The molecules can be bio-molecules,
explosive materials, or species of organisms. The slotted member
can be a semiconductor film, a metallic film, in particular InSb,
or layers thereof. THz detectors sense near field THz radiation
that has been transmitted through said slots and the test
material.
Inventors: |
Gelmont; Boris;
(Charlottesville, VA) ; Globus; Tatiana;
(Charlottesville, VA) ; Weikle; Robert M.;
(Crozet, CA) ; Lichtenberger; Arthur Weston;
(Charlottesville, VA) ; Swami; Nathan;
(Charlottesville, VA) ; Parthasarathy; Ramakrishnan;
(Houston, TX) ; Bykhovski; Alexei; (Raleigh,
NC) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Gelmont; Boris
Globus; Tatiana
Weikle; Robert M.
Lichtenberger; Arthur Weston
Swami; Nathan
Parthasarathy; Ramakrishnan
Bykhovski; Alexei |
Charlottesville
Charlottesville
Crozet
Charlottesville
Charlottesville
Houston
Raleigh |
VA
VA
CA
VA
VA
TX
NC |
US
US
US
US
US
US
US |
|
|
Assignee: |
Direct Source International,
LLC
Bluffton
SC
|
Family ID: |
39738783 |
Appl. No.: |
13/564102 |
Filed: |
August 1, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12530304 |
Sep 8, 2009 |
8309930 |
|
|
PCT/US2008/055962 |
Mar 5, 2008 |
|
|
|
13564102 |
|
|
|
|
60904999 |
Mar 5, 2007 |
|
|
|
Current U.S.
Class: |
250/338.4 ;
250/339.01 |
Current CPC
Class: |
G01N 21/3563 20130101;
G01J 3/024 20130101; G01N 21/4788 20130101; G01N 21/3581
20130101 |
Class at
Publication: |
250/338.4 ;
250/339.01 |
International
Class: |
G01J 3/02 20060101
G01J003/02 |
Claims
1-15. (canceled)
16. An integrated THz micro-detector assembly comprising a
sub-micron probe connected to a miniature bolometer detector and
control circuit with a corresponding impedance matching network to
achieve the precise detection of the electric field in the
near-field configuration, said sub-micron probe being mounted on a
stage and positioned for near field scanning, with a resolution of
less than 1 nm, over the sample under test along XYZ direction with
nanometer accuracy controlled by said control circuit, wherein said
sub-micron probe is positioned in the near field of THz radiation
through an analyte sample, within 2 microns of said sample, and
further comprising means for increased coupling of THz radiation to
molecules in said analyte sample, said means comprising a slotted
member, said slotted member being positioned between said source of
EM radiation in the THz spectral range and said materials of
interest, said probe being positioned at a slot edge.
17. (canceled)
18. (canceled)
19. The assembly of claim 16, wherein said slotted member is an
array of rectangular slots or elongated holes.
20. The assembly of claim 16, wherein said slotted member is an
array of spaced strips of metal, semiconductors, or layers
thereof.
21. The assembly of claim 16, wherein said slotted member is a
member selected from the group comprising thin InSb thin film, thin
Si thin film and a thin Au thin film and combinations thereof.
22. The assembly of claim 19, wherein said slotted member is an
array of spaced strips of metal, semiconductors, or layers
thereof.
23. The assembly of claim 19, wherein said slotted member is a
member selected from the group comprising thin InSb thin film, thin
Si thin film and a thin Au thin film and combinations thereof.
24. The assembly of claim 19, wherein said slotted member is an
array of spaced strips of metal, semiconductors, or layers thereof
and wherein said slotted member is a member selected from the group
comprising thin InSb thin film, thin Si thin film and a thin Au
thin film and combinations thereof.
Description
CROSS-REFERENCE TO RELATED PATENT APPLICATION
[0001] This application is the National Stage entry of
PCT/US2008/055962 filed Mar. 5, 2008 and claims the benefit of
provisional patent application No. 60/904,999, filed Mar. 5, 2007,
having the title "Method of local electro-magnetic field
enhancement of terahertz (THz) radiation and related system" the
disclosure of which is incorporated herein by reference, as though
recited in full.
FIELD OF THE INVENTION
[0002] The invention relates to elector-magnetic field enhancement
of terahertz radiation in sub wavelength regions and Improved
Coupling of radiation to materials through the Use of the
discontinuity edge effect and more particularly to the use of slots
in materials such as semiconductors and metals for use in THz
sensors.
BACKGROUND OF THE INVENTION
[0003] At terahertz (THz) frequencies, electromagnetic (EM) fields
can be absorbed by optically active internal vibrations of
molecules. The capability of THz spectroscopy to detect directly
the low-frequency vibrations of weak bonds, including but not
limited to hydrogen bonds, is unique in providing information quite
different from the visible or IR spectroscopic characterization.
This uniqueness opens a large number of applications for THz
vibrational spectroscopy in areas such as biomedicine,
pharmaceutical analysis, real time monitoring of biological
processes, detecting and identification of harmful biological
species. A significant advantage of THz spectroscopy is that it is
nondestructive to living species. Since each molecule has its own
specific internal vibrations, this process can be used to
fingerprint, characterize and identify a broad range of molecules.
Very recently a THz spectroscopy technique for structural
characterization of DNA, proteins and other bio-polymers in diluted
solutions was developed by taking advantage of the lower water
absorption in the sub-THz vs. IR and far IR regions [1-3].
[0004] However, several primary problems impede the development of
THz spectroscopy of biological molecules and the application of
this technique for characterization, detection, and discrimination
between species as well as for the development of new devices for
monitoring biological processes. The first problem is that the THz
coupling to molecules is not very strong, resulting in poor
sensitivity to molecular vibrations. The second problem is low
spatial resolution due to the long wavelength of THz radiation (3
mm at 0.1 THz) and diffraction limitation. Thus, the spatial
resolution is limited to several mm in the spectral range of 10-30
cm.sup.-1. This spectral range below 1 THz is especially attractive
for practical applications because of low disturbance from the
absorption by water or other solvents. In order to increase the
sensitivity and reliability of THz fingerprinting techniques,
coupling of incident THz radiation to biological or chemical
molecules has to be enhanced.
[0005] The enhancement of the electric field was demonstrated long
ago in optical diffraction by perfect metallic screens. Diffraction
by a single slit in a perfect metallic screen was considered by
Sommerfield [7]. He studied a case of the incident electromagnetic
waves being normal to the screen and proved that the electric field
is divergent at the edges of the slit if the incident electric
field is perpendicular to the edges. Periodic slot arrays are other
possible candidates for increasing the sensitivity. Such arrays
were previously used for THz bandpass filters fabricated from lossy
metal films deposited on dielectric membranes [8]. Experimental
work on enhanced transmission are mostly available at optical and
near-infrared frequencies for metallic periodic structures
(gratings [9-12] and hole arrays [13-15]). Recently, it has been
shown that waveguide resonance and diffraction are the main factors
contributing to enhanced transmission of narrow slot subwavelength
metallic gratings [12]. The phenomenon of extraordinary optical
transmission (transmission efficiency exceeding unity when
normalized to the surface of the holes) through hole arrays, first
experimentally observed in Ag in 300 nm-1500 nm range [13-14], has
been attributed to the resonant tunneling of surface plasmons
[14-19] through thin films. Recently, similar studies were
conducted in the THz range with hole arrays in films made of metals
(Ag-coated stainless steel [20], Al-coated Si wafers [21]) and
doped semiconductors (Si [22] and InSb [23]), and also with
metallic slot arrays [24] using the perfect conductor
approximation).
SUMMARY OF THE INVENTION
[0006] The present invention relates to a method and related system
to enhance the local electro-magnetic field of THz radiation in sub
wavelength regions and to improve the coupling of THz radiation
with bio- and chemical materials through the use of the
discontinuity edge effects in propagation of radiation in
semiconductor or metal slots for application in THz sensors with
the spatial resolution much below the diffraction limit.
[0007] The electro-magnetic field distribution inside slot or hole
arrays was not investigated previously in terahertz range. It has
now been found that transmission properties of subwavelength slot
arrays are fundamentally different from arrays of holes, since
unlike hole arrays, a slot array can support propagating waveguide
modes. Thus, increased transmission and local electric field
enhancement for transverse magnetic (TM) wave incidence can be
obtained through careful choice of materials and design of periodic
slot array structures. It has now been found that the enhancement
of the THz electro-magnetic field extends across the slots and
reaches peak values at the edges because of discontinuity effects.
This highly intense localized peak of THz radiation is used in
sensors to dramatically improve their spatial resolution and
magnify the sensitivity.
[0008] An aspect of various embodiments of the present invention
may comprise, but not be limited thereto, a novel method and
related system to the fundamental problem of improving THz coupling
to bio-molecules, explosives, and other materials of interest that
have been deposited near the discontinuity edges of a slot or a
periodic grating fabricated from semiconductor materials or metals,
while simultaneously improving special resolution [4-6]. The
improved coupling and spatial resolution are both based on the
local EM field and power enhancement near the discontinuity edges
with respect to the incident field in structures of slots in a
doped semiconductor or metal film or multilayer structures that
support modes which locally enhance EM fields. The enhancement
mechanism is purely due to the diffraction or discontinuity edge
effects in propagation of Terahertz (THz) radiation in
subwavelength rectangular slot or periodic structures. It should be
noted that theories are provided for background and a full
understanding of the technology and not by way of limitation.
[0009] The mechanism of coupling of TM polarized THz radiation to
the periodic thin film structure consisting of a doped
semiconductor with rectangular slot arrays using InSb, Si and gold
films are described herein by way of example and not by way of
limitation. Transmission properties of subwavelength slot arrays
are fundamentally different from arrays of holes, since unlike hole
arrays, a slot array can support propagating waveguide modes. Thus,
increased transmission and local electric field enhancement for TM
incidence can be obtained through careful choice of materials and
design of periodic slot array structures. The enhancement of the
THz electro-magnetic field extends across the slots and reaches
peak values at the edges because of discontinuity effects.
[0010] The vector of the electric field E is directed perpendicular
to the slots. This approach leads to a new mechanism for
sub-wavelength THz imaging sensing with sub-micron spatial
resolution.
[0011] This method of local enhancement has been discovered using a
rigorous mathematical solution of Maxwell's equations for doped
semiconductor and metal structures with sub wavelength one
dimensional slot arrays subjected to THz radiation. Using InSb as
an example, an EM field enhancement of over 30 near the slot edges
translates into a 1000 fold increase in power.
[0012] The "edge effect" at sub-THz frequencies caused by the
effects of the discontinuity of the present invention, is a very
important new result that guides the novel device design. In one
embodiment, the bio- or chemical material is embedded in the
regions of the slot edges where the EM field enhancement is
generated. Other modifications include semiconductor or metal films
and multilayer structures with slots of different periodicity and
geometry with bio- or chemical material embedded at locations of EM
field enhancement. The bio- or chemical material can also be
delivered to the slots using microfluidic channels. The enhanced
coupling to biological or chemical material inside the chip at
particular frequencies within THz gap (approximately 0.1-10 THz)
results in more significant changes to the transmitted and
reflected spectra that can be applied to enhance the sensitivity
and selectivity of bio- and chemical detection.
[0013] One example of an important practical application of this
invention is the development of a simple, all optical,
appertureless, subwavelength transmission THz sensor with the
spatial resolution much below the diffraction limit and integrated
with a microfluidic channel chip for a sample material. The imaging
mechanism of the present invention, integrated with a "lab-on-a
chip" device, is the heart of a sub-wavelength THz microscopic
sensor.
[0014] An aspect of the present invention is a grating structure
with optimized periodic sub-wavelength geometries and integrated
with a microfluidic chip for bio material analyte.
[0015] Another aspect of the present invention is an inexpensive
microfluidic chip made from plastic and integrated with a thin film
grating to dramatically enhance sensitivity and spatial resolution.
In such an instrument, the other crucial component is a miniature
detector assembly with micron size antenna mounted on the
translation stage to probe the spatial distribution of a THz signal
in a near field configuration.
[0016] A further aspect of this invention is an integration of
these central components of a proposed sensor with a THz source
through the optical focusing system.
[0017] The instrument is capable of collecting THz-frequency
signatures from microscopic biological or chemical molecules. The
upper frequency limit of practical application of discovered
mechanism for the local EM field enhancement is determined by the
condition d<.lamda., where .lamda., is the wavelength of
radiation and d is the structure periodicity.
[0018] The prototype of a miniature THz detector consisting of a
Schottky diode integrated with a circuit and a sub-micron beam lead
probe has been designed and fabricated. The integration of the
detector assembly with the translation stage has been designed. The
periodic slots structure has been fabricated using the
photolithographic process and electroplating. The microfabrication
processes have been optimized to obtain high sharpness at the edge
of the slots. The technology to fabricate and characterize
microfluidic channels for biological molecules was also
demonstrated.
[0019] This novel detection platform can be applied to, but not
limited thereto, the development of a new class of resonant, highly
sensitive and selective portable bio- and chemical devices for
biochemical, medical and military applications.
[0020] Some exemplary novel aspects that may be associated with
various embodiments of the present invention method and system may
comprise, but not limited thereto, the following:
[0021] The method of detection the spectroscopic signatures of
bio-molecules or other materials of interest, such as explosives,
using the local EM field enhancement with respect to the incident
field within semiconductor or metallic slot or hole arrays. This
enhancement leads to increased coupling of EM radiation in the THz
spectral range to materials of interest and, therefore, results in
dramatic improvements to the sensitivity, selectivity, reliability
and spatial resolution of THz detection systems.
[0022] (2) Criteria for optimizing the selection of materials and
properties appropriate for the local distribution of THz radiation
suitable for the method as (1).
[0023] (3) Design of a periodic structure of slots to support a set
of THz modes that locally enhance EM fields for the method as
(1).
[0024] (4) Application of the periodic structure of slots to
locally enhance THz coupling to biological, explosive, or other
materials of interest in solid or fluidic form, with the material
immobilized on the surface, trapped at slot edges, or scanned
across a microfluidic chamber.
[0025] (5) Application of the periodic structure of slots scanned
the slots across the material sample to enhance local coupling and
thereby improve the chemical resolution and sensitivity of the
detector to THz imaging.
[0026] (6) Application of the periodic structure of slots to
detectors that include miniaturized THz near-field sensing.
[0027] (7) Application of the collimated beam of a polarized THz
radiation to illuminate a structure from rectangular slots in a
thin metallic or doped semiconductor film.
[0028] (8) Developing a grating structure with optimized periodic
sub-wavelength geometries.
[0029] (9) Integration of THz radiation with an inexpensive
(disposable) microfluidic chip containing sample materials in
aqueous or biological native state, made from plastic or other
materials transparent in the THz range.
[0030] (10) Application of the thin film slot grating integrated
with the microfluidic channel with the sample material to be tested
where it is illuminated with the terahertz energy.
[0031] (11) Integration of THz radiation with a microfluidic
network of channels of nanoscale thickness for purposes of washing,
sorting and pre-concentration of samples to permit real-time THz
detection and characterization at improved sensitivities.
[0032] (12) Application of the integrated THz micro-detector
assembly that is composed of three essential parts, i.e. a
micron/sub-micron probe (antenna) that is connected to a miniature
detector and control circuit with the corresponding impedance
matching network to achieve the precise detection of the electric
field in the near-field configuration.
[0033] (13) Application of mounting the detector assembly on the
stage, which can provide precise (with resolution less than 1
.mu.m) scanning over the sample under test along XYZ direction with
nanometer accuracy controlled by the control circuit.
[0034] (14) Application of microscopic device for precise
positioning of a micron probe in close vicinity of a slot structure
outdoing interface.
[0035] (15) Alternatively, application of an electric (capacitive)
mechanism for precise positioning of a micron probe in close
vicinity of a slot structure outdoing interface.
[0036] (16) Application of reduced amount of material for
characterization.
[0037] (17) Application of a linear array of miniature detectors
integrated with scanning mechanism for a THz imaging.
[0038] The invention is illustrated by the example structure
consisting of a one-dimensional array of rectangular slots with the
period less than the wave length of applied EM radiation in a thin
doped InSb film with a free electron concentration of
1.1.times.10.sup.16 cm.sup.-3. This is not to be construed in any
way as imposing limitations upon the scope of the invention.
Structures with slot arrays or hole arrays of different periodicity
and different geometry can be used as well. Different materials
such as semiconductor films or metallic films can be used
separately or in combinations as in multilayer structures.
[0039] Applications might include simple microscopic sensors for
detecting traces of particular material at the nanograms level in a
solid form or in dilute solutions in water or other analytes;
microscopic sensors combined with microfluidic channels for
monitoring biological processes; microscopic sensors with linear
detectors array and two dimensional scanning as THz imaging
instruments.
[0040] It should be understood that resort may be had to various
other embodiments, modifications, and equivalents to the
embodiments of the invention described herein which, after reading
the description of the invention herein, may suggest themselves to
those skilled in the art without departing from the scope and
spirit of the present invention.
[0041] In accordance with an embodiment of the invention, an
enhanced THz coupling to molecules is achieved by depositing a test
material near the discontinuity edges of a slotted member,
enhancing the THz radiation by transmitting THz radiation, having a
vector directed perpendicular to the slots of the slotted member
and illuminating molecules of the test material with the enhanced
THz radiation transmitted through these slots. This method results
in producing an increased coupling of EM radiation in the THz
spectral range to the material.
[0042] In accordance with another embodiment of the invention the
enhanced THz radiation is an EM field of terahertz radiation in a
submicron region, and the THz vibration absorption by the test
material is analyzed. The molecules can comprise bio-molecules,
organic molecules, or an explosive.
[0043] In accordance with a further embodiment of the invention the
slotted member is selected from the group comprising doped
semiconductors, metal films, and multilayer structures that support
modes that locally enhanced EM fields, and near field sensing of
THz radiation from the molecules. Increased coupling and spatial
resolution are both based on the local EM field and power
enhancement near the discontinuity edges with respect to the
incident field in slotted structures.
[0044] In accordance with a further embodiment of the invention an
EM field enhancement is generated at the edges of the slots and a
bio- or chemical material is embedded at the location of the EM
field enhancement. THz radiation is transmitted through the slots
and bio- or chemical material at the location of EM field
enhancement and the near field THz radiation that has been
transmitted through the slots and has illuminated said bio- or
chemical material at the location of EM field enhancement is then
sensed. The transmission of THz radiation through the slots
increases the degree of the coupling of EM radiation in the THz
spectral range to materials of interest by transmitting THz
radiation through an array of openings, to detect the spectroscopic
signatures of said bio- or chemical material. Near field scanning
with a THz antenna, of transmitted radiation of the slotted member
from sample material near the discontinuity edges can be used.
[0045] In accordance with a still further embodiment of the
invention the increase in coupling of EM radiation in the THz
spectral range to weak bonds in molecules, is achieved by
depositing a material of biological or chemical molecules near the
discontinuity edges of slots of a slotted member, and transmitting
THz radiation through the slots and illuminating the molecules with
the transmitted THz radiation. The slots are periodic structures
with the coupling increase being due to the diffraction or
discontinuity edge effects in propagation of THz radiation in
subwavelength rectangular slots of the slotted member, which is
fabricated from semiconductor materials, metals, or combinations
thereof. The near field THz radiation is transmitted through said
slots and said bio- or chemical material which can be selected from
the group comprising explosives, toxic materials, living organisms
and pharmaceuticals, is then sensed.
[0046] In accordance with a further embodiment of the invention the
changes of dielectric properties of bio-materials in biophysical
processes, is monitored. The property is selected from the group
comprising denaturation of DNA, folding-unfolding of proteins, and
structural conformational changes of biomolecules in interactions
with drugs. A GHz signal is generated and the GHz radiation
converted to THz radiation with a frequency multiplier. The THz
radiation is collimated for transmission through the slots and
illumination of the molecules with the transmitted THz radiation.
An EM field enhancement is generated at the edges of the slots,
selectively detecting enhanced THz transmitted through the
bio-materials at the slot edges. The selectively detected enhanced
THz radiation is monitored to determine changes of dielectric
properties of bio-materials in biophysical processes.
[0047] In accordance with a further embodiment of the invention an
all-optical, apertureless instrument, free of mechanical tips or
probes to contact testing material is used for analysis. The
instrument comprises a slotted member, a source of THz radiation,
and an analyte material embedded at least at the edges of the slots
of the slotted member. The analyte material is molecules in dilute
solutions with the molecules selected from the group comprising
monolayers of biological material and cancer cells.
[0048] In accordance with a further embodiment of the invention an
integrated THz micro-detector assembly comprises a sub-micron probe
connected to a miniature bolometer detector and control circuit
with a corresponding impedance matching network and is used to
achieve the precise detection of the electric field in the
near-field configuration. The sub-micron probe is mounted on a
stage and positioned for near field scanning, with a resolution of
less than 1 nm, over the sample under test along XYZ direction with
nanometer accuracy controlled by said control circuit. Preferably
the sub-micron probe is positioned within 2 microns of the
sample.
[0049] In accordance with a further embodiment of the invention the
coupling of THz radiation to molecules in the analyte sample is
increased by using a slotted member, consisting of an array of
rectangular slots or elongated holes, positioned between said
source of EM radiation in the THz spectral range and the materials
of interest. The slotted member can be an array of spaced strips of
metal, semiconductors, or layers thereof and selected from the
group comprising thin InSb thin film, thin Si thin film and a thin
Au thin film and combinations thereof.
[0050] In accordance with a further embodiment of the invention a
device for sub-wavelength THz imaging sensing with sub-micron
spatial resolution consists of means for generating THz radiation,
a slotted structure with slots of a predetermined periodicity and
geometry, a translation stage, a miniature detector assembly and at
least one THz radiation sensor. The detector assembly is a chip
about 1 mm wide and 1.5 mm long having a beam lead micro-tip with a
length of about 60.mu.. long, a tip length of about 15 .mu.m, a tip
width of about 15 .mu.m, and a tip of about 0.6 .mu.m. The detector
further has a micron size antenna mounted on the translation stage,
to probe the spatial distribution of a THz signal in a near field
configuration. The THz radiation sensor(s) are positioned to
receive THz radiation from the slots. The slotted structure can be
a one-dimensional array of rectangular, or elongated, slots with a
periodicity of less than the wave length of applied EM radiation in
a doped InSb thin film. A fluidic member having microfluidic
channels, delivers bio- or chemical material to the slots through
the microfluidic channels. The microfluidic chamber comprises a
network of micro-channels of nanoscale thickness, and means for at
least one of washing, sorting and pre-concentration of samples to
attain real-time THz detection at improved sensitivities. The
micro-channels can be about 5-50 .mu.m wide, 1 .mu.m deep, 1-2
.mu.m long, and are in a 10-50 .mu.m substrate of
polydimethylsiloxane (PDMS) or polymethylmethacrylate (PMMA), or
other material, that is transparent to THz radiation.
[0051] In a further embodiment of the invention an optical device,
such as a THz microscope, comprises an apertureless, subwavelength
transmission THz sensor with the spatial resolution substantially
below the diffraction limit and having a source of THz radiation, a
slotted member with substantially rectangular or elliptical slots
of a predetermined periodicity and geometry, at least one THz
radiation sensor positioned to receive near field THz radiation
transmitted through said slots at the slot edges and means to
optically focus the THz radiation through the analyte. An EM field
enhancement is generated at the edges of the slots, with a bio- or
chemical material embedded at the location of EM field enhancement.
An integrated microfluidic channel chip, comprises a network of
channels of nanoscale thickness, delivers a sample material to the
slotted member. The slots have a width less than the wavelength of
the THz radiation and a length greater than the wavelength of the
THz radiation and d<.mu., where .mu. is the wavelength of
radiation and d is spacing from the distal edge of one slot to the
proximal edge of the next slot. Means are provided to collimate and
polarize the THz radiation and the THz radiation can be a
collimated beam of a polarized radiation and illuminates an analyte
through rectangular slots in a thin metallic or doped semiconductor
film. The analyte materials are in solid or fluidic form, and are
embedded on the surface of the slotted member, trapped at slot
edges, embedded in slots, or scanned across a microfluidic chamber.
An integrated THz micro-detector assembly comprising a
micron/sub-micron probe connected to a miniature detector and
control circuit, said control circuit having a corresponding
impendence matching network to achieve the precise detection of the
electric field in the near-field configuration can be incorporated.
The micro-detector assembly, a linear array of miniature detectors
integrated with said scanning mechanism for THz imaging of
analytes, is mounted on a stage member to provide precise scanning,
with resolution less than 1 nm, over the sample under test along
XYZ direction with nanometer accuracy controlled by the control
circuit.
[0052] In a another embodiment of the invention a monitoring system
for monitoring changes of dielectric properties of materials
comprises a THz source, with a GHz signal generator, a frequency
multiplier, and a power supply for said source; at least one
collimating member; a periodic slot chip; a detector assembly chip
and a motorized XYZ stage with controller. The detector assembly
chip is mounted on a stage for XYZ movement with respect to said
periodic slot chip, for detecting and monitoring THz radiation that
is transmitted through slots in the periodic slot chip.
BRIEF DESCRIPTION OF THE DRAWINGS
[0053] FIG. 1. The periodic rectangular slot array structure. The
axes and the structure parameters (d--spacing, s--slot width,
h--film thickness) are shown. The vector of electric field is in
the x direction perpendicular to the slot.
[0054] FIG. 2. Electric field enhancement,
E x i E 0 , ##EQU00001##
as a function of a coordinate x (.mu.m) across a slot for the
structure parameters d=381 .mu.m, s=55 .mu.m, h=4 .mu.m and for the
wavelength .lamda.=714 .mu.m. Note the majority of the enhancement
takes place at the slot edges i.e. around (-s/2) and (s/2).
[0055] FIG. 3. THz power, (E.sub.x/E.sub.o).sup.2, enhancement as a
function of a coordinate x (m) across a slot for the structure with
the same parameters as in FIG. 2 at two frequencies 14 cm.sup.-1
(the wavelength=714 m) and 24 cm.sup.-1.
[0056] FIG. 4. The edge effect for two components of electric field
E.sub.x and E.sub.Z,
[0057] FIG. 5. Plot of maximum electric field enhancement,
E x i E 0 ( max . ) , ##EQU00002##
at the incident interface and around slot edges as a function of a
slot width, s, with d=381 m, and =714 m, for different h values
(h=12 m, 6 m and 4 m).
[0058] FIG. 6. Far field transmission, |t|, as a function of
d/.lamda., for different values of a slot width, s. Here d=381
.mu.m, h=12 .mu.m.
[0059] FIG. 7A. The edge effect in periodic structures made of a Si
film: d=251 .mu.m, s=95 .mu.m, and h=4 .mu.m, and of a gold
film.
[0060] FIG. 7B. The edge effect in periodic structures made of a Si
film d=251 .mu.m, s=36 .mu.m, and h=4 .mu.m.
[0061] FIG. 8. A diagrammatic illustration of a THz microscopic
sensor.
[0062] FIG. 9. The periodic slot structure made of gold on the
silicon wafer fabricated using the photolithographic process and
electroplating. The yellow parts are gold and the dark parts are
air slots of 55 .mu.m. The similar periodic structure was
fabricated on a quartz substrate and using polydimethylsiloxane
polymer substrate.
[0063] FIG. 10. A SEM picture of one gold slot. The edge extrude is
0.5 .mu.m.
[0064] FIG. 11A. Concept of integrated probe with Schottky diode
detector.
[0065] FIG. 11B. Prototype sensor circuit with planar probe. The
position for the diode detector between the probe and lowpass
filter is indicated.
[0066] FIG. 12. Beam lead structures fabricated on an ultra-thin (5
.mu.m thick) silicon chip.
[0067] FIG. 13. The electrical field distribution along the cross
section of one slot with and without the detecting probe present.
The distance between the probe and the slot surface is 1 .mu.m.
[0068] FIG. 14. Array of detectors for operation at 1.6 THz. The
spacing between adjacent elements is 40 .mu.m and the substrate
material is quartz [28].
[0069] FIG. 15. Miniature detectors (nanometer-scale bolometer)
integrated with planar antennas for operation at 600 GHz [29].
[0070] FIG. 16. A preferred embodiment for applying the periodic
slots to increase the THz coupling to molecules across the sample
area, through the use of a piezo-stage to scan the light exiting
the slot edges across the samples and place the detector in close
proximity to the slots and sample. A detector assembly is combined
with a sample or microfluidic channel (5-50 .mu.m wide, 1 .mu.m
deep, 1-2 cm long, with a 10-50 .mu.m backing support to enable
handing) filled with biomaterials. A 2-5 .mu.m Au edge layer is
patterned on the top edge of channel. Not in scale.
[0071] FIG. 17. Example of assembly for integrating periodic
microfluidic structure with translatable miniaturized detectors
(not in scale) for monitoring changes of THz dielectric properties
of bio-materials in solutions.
[0072] FIG. 18A. Side-view of the proposed sample cell with 1-10 um
thickness for biological material.
[0073] FIG. 18B. Schematic top view of fluidic system with multiple
inlets to affect local chemical changes to biomolecule conformation
and its integration to terahertz (THz) optics and detection.
[0074] FIG. 19A. Sub-THz transmission spectra of a single stranded
and double stranded Salmon DNA. The sensor can be tuned to either
of frequencies 12.7 cm.sup.-1,16 cm.sup.-1, or 22.3 cm.sup.-1 where
spectral features differences are observed [30];
[0075] FIG. 19B. Lysozyme unfolded with a GuHCI and
thermo-unfolded. Lysozyme sample unfolded with GuHCI are in
substantially unfolding state in which little persists secondary or
tertiary structure and eliminates refolding process in unfolded
lysozyme.
[0076] FIG. 20. The schematic layout for the experimental
system.
DETAILED DESCRIPTION OF THE INVENTION
Definitions
[0077] As employed herein, the term "slots" is inclusive of a
structure having a linear array of thin opaque strips, a structure
in which slots are formed in a solid material, and slits or slots
having a periodic spacing and suspended on a solid matrix. The term
slots is inclusive of hole and gratings. The geometry of slots
includes:
[0078] a closed curve, the intersection of a right circular cone
(see cone) and a plane that is not parallel to the base, the axis,
or an element of the cone. It may be defined as the path of a point
moving in a plane so that the ratio of its distances from a fixed
point (the focus) and a fixed straight line (the directrix) is a
constant less than one. Any such path has this same property with .
. .
[0079] elongated slot, such as, a flattened circle: a
two-dimensional shape like a stretched circle with slightly longer
flatter sides
[0080] ii--egg shape: something shaped like an egg or a flattened
circle
[0081] iii--oval--a closed plane curve resulting from the
intersection of a circular cone and a plane that is non-parallel to
the plane of the base of cone the cutting completely through it;
"the sums of the distances from the foci to any point on an ellipse
is constant".
[0082] ellipse:
[0083] A conic section whose plane is not parallel to the axis,
base, or generatrix of the intersected cone.
[0084] The locus of points for which the sum of the distances from
each point to two fixed points is equal.
[0085] A four sided polygon having opposing sides equal to each
other but not equal to their adjacent sides.
[0086] An elongated square or rectangle.
[0087] A rectangle with rounded corners
[0088] viii--an elongated parallelogram--a quadrilateral whose
opposite sides are both parallel and equal in length to each other
but not equal in length to adjacent sides
DESCRIPTION
[0089] An aspect of various embodiments of the present invention
comprises, but is not limited thereto, a method and related system
for detection of the THz spectroscopic signatures of bio-molecules
or other materials of interest, such as explosives, in 0.1-3 THz
range that is based on the local EM field enhancement with respect
to the incident field in structures with slot or slot arrays
fabricated using semiconductor or metallic films or multilayer
structures. This enhancement leads to an increased coupling of EM
radiation in the THz spectral range to materials of interest and,
therefore, results in dramatic improvements to the sensitivity,
selectivity, reliability and spatial resolution of THz detection
systems.
[0090] A prototypical embodiment of this application to deliver the
enhanced coupling of THz radiation with bio- or chemical materials
is through periodic structures of sub wavelength slots in
semiconductor or metallic films. In the THz region, interaction
between radiation and metals is quite different from higher
frequency regions due to the change in material dielectric
properties. In the visible and near-IR regions, where frequencies
are only slightly less than plasma frequency, the permittivity is
predominantly real and negative (for example, at wavelength 1
.mu.m, .di-elect cons..sub.Au=-51.4+j1.6), and metals are
reflective. On the contrary, as the frequency is lowered to the THz
range, the real part continues to be negative and large, but the
dissipative imaginary part becomes larger, and hence metals are
very conducting and absorbing (at wavelength 500 .mu.m, .di-elect
cons..sub.Au=-5.5.times.10.sup.4+j8.5.times.10.sup.5). Therefore,
to reduce radiation losses, it is preferable to substitute metals
with doped semiconductors with plasma frequencies in the low THz
range. InSb with high electron mobility and low effective mass is
most suited for this purpose, but still has a substantial absorbing
imaginary part compared to the real component. In the semiconductor
structure with periodic gratings, the material properties are
periodic functions of coordinates as well. The absorbing component
in semiconductors (InSb and Si) requires the assumption of a small
film thickness, which makes the semiconductor skin depth at both
semiconductor-air interfaces larger than half the film thickness
throughout the frequency range of interest. This renders the
surface impedance boundary conditions for perfect conductors
[32,33] to be unsuitable for semiconductor structures. On the other
hand, in contrast with the behavior of metals in short wavelength
ranges, the Fourier expansion method for field diffracted from
gratings [9] can be applied in the THz region for InSb and Si
films, since the imaginary permittivity component damps the Gibbs
oscillations [34]. The Fourier expansion of the electro-magnetic
fields and the permittivity were used to solve the terahertz
transmission/absorption/reflection problem and to calculate the
total distribution of the electro-magnetic field in the system. At
the same time, the Fourier expansion method is unsuitable for Au
owing to its dielectric properties. However since the skin depth
for Au is small compared to thickness, surface impedance boundary
conditions can be used. Even in this case, the perfect conducting
walls approximation [35] for fields inside slots is employed since
the thickness assumed is very small compared to the wavelength.
Using a rigorous theoretical model of the enhancement effect
derived from the numerical solution of Maxwell's equations for
semiconductor based periodic structures with one dimensional slot
arrays in 0.3-0.75 THz range [described originally in Refs.5,6],
the "edge effect", a localization of EM field that can be used to
implement novel bio- and chemical sensors, was discovered.
Maxwell's equations with appropriate boundary conditions on
interfaces were solved with the frequency-dependent permittivity of
the doped semiconductor. For polar materials like InSb, the
frequency dependence of the relative permittivity, .di-elect
cons.(.omega.), includes terms describing the interaction of light
with free carriers (Drude model) and with the optical phonons.
Example
[0091] An aspect of various embodiments of the present invention
can comprise a structure suitable for sensing applications, as
illustrated in FIG. 1. The structure includes a structure 102
having a subwavelength array of slots 104 with the periodicity in
the x-direction and extending in the y-direction. The z-direction
is perpendicular to the plane of incidence. Since the structural
geometry is not altered in the y-direction, it would suffice to
analyze a one-dimensional periodic slot structure as shown in FIG.
1 with spacing (or periodicity) denoted by (d), the slot width by
(s) and the thickness of the film by (h). The structure is
considered to be illuminated at normal TM incidence 106.
[0092] FIG. 2 shows the electric field amplitude (with incident
field normalized to unity) at the interface of incidence, as a
function of position with a slot width (s) of 55 .mu.m, periodicity
(d) of 381 .mu.m, height (h) of 4 .mu.m. The simulation frequency
is chosen to be 420 GHz (wavenumber of 14 cm.sup.-1) because
absorption peaks of interest for many biological molecules have
been shown to occur in this region. The enhancement of the field
intensity at this frequency was obtained at all points in the
slots. The half-power peak field near the slot edges occurs over a
sub-micron region (.about.500 nm). In practice, most of the field
is confined to the edges (i.e. sharp regions) of the conducting
medium. The maximum power enhancement is approximately 1100 and
also occurs for a slot height of 4 .mu.m. The enhancement persists
across the slots, decreasing slightly from the incident interface
to the outgoing (transmission) interface. It cannot be attributed
to a surface plasmon mode because the plasmon matching condition is
not applicable for permittivities with substantial imaginary
parts.
[0093] Using InSb as an example, it has been shown that the 30-fold
EM field enhancement within the sub-micron region of the slot
edges, translates into a 1000 fold increase in power (FIGS. 2 and
3). This "edge effect" at sub-THz frequencies caused by
discontinuity effects is an important new result that can be
applied to guide designs for enhanced THz coupling, as described
below. The EM field enhancement at other points inside the slot,
away from the edges is smaller, on the order of 3-5 fold. The
enhancement of the amplitude of the electric field with respect to
the incident field is demonstrated in FIG. 2 where the relative
x-component of the electric field amplitude is plotted as a
function of a coordinate across the slot, x, with s=55 .mu.m and
h=4 .mu.m, for radiation with the frequency of 14 cm.sup.-1. The
electric field enhancement occurred within the sub-micron region
around the slot edges i.e. at discontinuities as illustrated in
FIG. 2. Practically most of the fields were confined to the edges
i.e. sharp regions of the conducting medium. The enhancement at the
edges is an order of magnitude higher than at the other points
within the slot. The maximum field enhancement is 33.3 at the
incident interface and 31.8 at the outgoing interface for h=4
.mu.m. For h=6 .mu.m, these values are 27.7 and 25 respectively and
for h=12 .mu.m, 20.5 and 14.7 respectively. The half power width
around the slot edges was .about.500 nm with maximum power
enhancement .about.1100 for the h=4 .mu.m case. This region did not
change much for the other h values. The enhancement exists across
the slots, slightly decreasing from the incident interface to the
outgoing interface. The decay into the metallic region is more
abrupt than into free space as expected, as seen in FIG. 3, and
around the edges is approximately proportional to
x 1 3 , ##EQU00003##
consistent with edge effects.
[0094] FIG. 3 illustrates the basic concept of an instrument of the
present invention.
[0095] FIG. 3 shows THz power, (E.sub.x/E.sub.o).sup.2, enhancement
as a function of a coordinate x (.mu.m) across a slot for the
structure with the same parameters as in FIG. 2 at two frequencies
14 cm.sup.-1 (the wavelength .lamda.=714 .mu.m) and 24 cm.sup.-1.
It is seen that an imaging sensor is capable of measuring the THz
response as well as resolving spatial features of samples under the
test with a micron-submicron resolution. The instrument employs a
terahertz source radiation that is collimated using optical
components. The THz radiation is directed at a thin film slot
grating integrated with a microfluidic channel with the sample
material to be measured where the sample is illuminated with the
terahertz energy. An integrated THz micro-detector assembly is
composed of three essential parts, i.e. a sub-micron probe
(antenna) that is connected to a miniature bolometer detector (for
example, Schottky-diode), and control circuit with the
corresponding impedance matching network to achieve the precise
detection of the electric field in the near-field configuration.
The detector assembly with a micro probe is mounted on the stage,
which provides precise scanning, with a resolution of less than 1
.mu.m, over the sample under test along XYZ direction with
nanometer accuracy controlled by the control circuit.
[0096] The technology for fabricating the miniature detector with
micron size antenna to affectively couple with THz radiation
transmitted through the slit is disclosed in publications noted
herein as 26 and 27.
[0097] FIG. 4 compares the enhancement of two electric field
components, E.sub.x and E.sub.Z, that are perpendicular and along
the direction of the incident radiation. The enhancement at the
slot edge as a function of a slot width is plotted in FIG. 5 for
three different thickness. The calculated far field transmission
through the structure is plotted in FIG. 6 as a function of a
periodicity, d/.lamda., for different slot widths. The "edge
effect" at sub-THz frequencies for two other materials (silicon and
gold) is demonstrated in FIGS. 7A and 7B. The effect is
significantly less than for InSb structure, however these materials
still can be used due to technological advances. In all these
cases, a sub micron narrow THz beam along the edge is a local,
highly intense radiation source for probing biological and other
material properties using near field configuration for specific
microscopic sensing and imaging instruments in the THz range.
[0098] The invention is illustrated by the example structure
consisting of a one-dimensional array of rectangular slots with the
period less than the wave length .lamda. of applied EM radiation,
which contains small quantities of biological material embedded in
the nano-size regions of the edges where enhancements of radiation
in the THz gap are observed. This array is made of a thin-doped
InSb film with a free electron concentration of 1.1.times.10.sup.16
cm.sup.-3 fabricated on a substrate transparent for THz radiation.
This is not to be construed in any way as imposing limitations upon
the scope of the invention. Structures with slot arrays or hole
arrays of different periodicity and different geometry can be used
as well. Different materials such as semiconductor films or
metallic films can be used separately or in combinations as in
multilayer structures.
[0099] It should be understood that resort can be had to various
other embodiments, modifications, and equivalents to the
embodiments of the invention described herein which, after reading
the description of the invention herein, can suggest themselves to
those skilled in the art without departing from the scope and
spirit of the present invention.
[0100] FIG. 8 shows an embodiment of the present invention for the
application of the periodic array of semiconductor slots to enhance
THz coupling to materials of interest for THz sensing and imaging.
The basic concept of the instrument is an imaging instrument
capable of measuring the THz spectral response as well as resolving
spatial features of samples under test with submicron resolution.
The design consists of three parts:
[0101] A supporting plate from plastic or quartz onto which a
periodic slots structure is bonded or electroplated that also
comprise materials sample chamber;
[0102] A miniaturized THz detector assembly which can be adjusted
with a movable stage so that sub micron probe(s) of detector(s) are
within .about.1 .mu.m of the plane where the THz radiation exiting
the slots. The preferable miniaturized THz detector is a Schottky
micro-diode from Virginia Diode Inc., Charlottesville, Virginia,
integrated with a coupling circuit and a nano-probe (antenna); and
a motorized movable stage with controller that provides sub micron
steps.
[0103] A terahertz source is collimated using standard optical
components onto the sample material that is induced into channels
of a microfluidic periodic structure integrated with a thin film
periodic slot grating. The detector assembly with a micro probe is
mounted to an XYZ nanopositioner and is scanned over the sample
under test. High-resolution piezoelectric positioners with
nanometer accuracy and travel ranges up to 1 cm are commercially
available and can be used for probe placement and positional
control.
[0104] In this configuration, the rectangular slots of a periodic
structure are concurrently used as channels for the sample material
and the materials or molecules of interest can be immobilized on
the surface of the film structure or trapped at the slot edges.
[0105] In another embodiment, these two functional elements can be
separated. Small quantities of biological material are embedded in
the nano-size regions of the edges where enhancements of radiation
in the THz gap are observed. Very small amount of material would be
enough for detection using this approach. The detector probes
(antennas) can be scanned in two perpendicular directions across
the sample chamber and sample material to improve sensitivity and
selectivity of THz sensing or to generate a 2D THz imaging.
[0106] Such application modes provide a new class of devices using
bio- or chemical fluidic chips combined with near field THz
detectors.
[0107] The effect of local near field enhancement of
electromagnetic field is used to maximize the coupling of terahertz
radiation to both biological and chemical molecules. The new
process for coupling provides dramatic improvements in spatial
resolution, sensitivity, reliability, and selectivity of terahertz
detection systems. The imaging mechanism of the present invention
is appertureless, all optical, and utilizes low THz frequency range
radiation to achieve a spatial resolution well below the
diffraction limit.
[0108] This new detection platform can produce a new class of
resonant, highly sensitive and selective portable bio and chemical
devices for uses in many different applications. By interacting the
THz vibration absorption modes from organic or biological molecules
with a locally enhanced EM field of terahertz radiation in a
sub-micron region, the developed imaging mechanism: [0109] Is
capable of sub wavelength spatial resolution, ideally 103 orders
less than the radiation wavelength. [0110] Is an all-optical
instrument, with no required mechanical tips or probes to contact
testing material. [0111] Requires no apertures. [0112] Can allow
for spectral selectivity. [0113] Can test biological monolayers,
and molecules in dilute solutions. [0114] The applications of
terahertz frequencies for identification and detection uses is
virtually almost endless, ranging from military and transportation
detection devices to real time drug development monitoring of
anti-bacterial or anti-viral drugs. [0115] Some examples: [0116]
New imaging mechanism integrated with a "lab-on-a chip" device for
sub-wavelength THz spectroscopic microscope. [0117] Water quality
monitoring. [0118] Monitoring biological processes [0119] Real time
monitoring of drug-bacteria cell wall interaction in drug
development. [0120] Rapid tissue testing for skin cancer
diagnostics [0121] Portable bio-material structure testing
devices.
[0122] The research work included sensor modeling and design,
fabrication of a beam lead antenna and a diode integrated with a
circuit, and demonstrated the successful implementation of the
imaging mechanism of the present invention. All elements of a THz
detector assembly to measure the electrical field distribution
around the periodic slots were modeled and fabricated and the
detector assembly was completed and tested.
[0123] The periodic slots structure of FIG. 9, indicated generally
as 900, was made of gold thin film on silicon wafers and quartz
using the photolithographic process and electroplating. The key
challenge associated with the fabrication of the slot arrays 902 is
to obtain a high degree of sharpness at the edges of slots due to
the fact that the enhancement of electrical field is in a micron
region. The microfabrication processes have been optimized to
obtain high sharpness at the edge 1002 of the slots 1006, as shown
in FIG. 10. The edge extrude of 0.2-0.5 .mu.m has been
attained.
[0124] The key function of the THz micro-sensor is to detect the
electrical field in the vicinities of the slot edges where the
enhanced coupling occurs. In other word, the THz micro-sensor
system is responsible to detect the near field distribution of
radiation transmitted through the biological or other materials of
interest that are located around the edges of the slots. Since the
electrical field enhancement is only available in a region of
several microns, the sub-micron sharp probe (antenna) 1102 of FIG.
11, is required for the sensing of the transmitted electrical field
through biological sample in order to obtain high sensitivity and
spatial resolution. Thus, it is crucial to provide an integrated
THz sensor detector with high-sensitivity and sub-micron spatial
resolution for subwavelength THz spectroscopy.
[0125] One example of such a sensor is a miniature sensing device
which incorporates a room-temperature detector, Schottky
micro-diode 1112, integrated with a coupling circuit and a
nano-probe 1108, (also referred to as an antenna) mounted on a
silicon substrate 1102, as shown in FIG. 11A. Other types of
miniature detectors can be used as well.
[0126] The zero biased Schottky diode 1112, which in this example
incorporates GaAs islands, transforms the input THz radiation
coupled from the sharp beam lead probe 1108 tip to the output dc
voltage. The magnitude of the output dc voltage is proportional to
the input power of the THz radiation. In FIG. 11b, a low pass
filter 1120 and the RF choke 1126, are the components for blocking
the high frequency radiation for the measurement of the dc voltage
across the diode 1112. Thin (50 .mu.m) fused quartz material is
chosen as the substrate 1102 for the detector circuit to minimize
the possible surface mode excitation. The detector assembly chip in
this example is 1 mm wide and 1.5 mm long. As illustrated in FIG.
12 the beam lead micro-tip 1200 has a length of about is .about.60
.mu.m long, as indicated by arrow 1204, has a tip length of about
15 .mu.m as indicated by arrows 1206, a tip width of about 15 .mu.m
as indicated by arrow 1202, and a tip 1208 of about 0.64 .mu.m.
Other types of miniature detectors that produce the same results as
the detector set forth above can be used as well.
[0127] A sharp coupling device can modify the original electrical
field distribution produced by the slots structure. Thus, the size
of the coupling device and the distance between the coupling device
and the slots has to be designed and optimized in order to obtain
the balance between measurement and disturbance of the local
electrical field around the periodic slots, while being a
physically realizable tip geometry. The local electrical field
enhancement at the edge of slot is confirmed by our electrical
field simulation work using the commercial full-wave solver. From
FIG. 13 it is seen that although the beam lead antenna disturbs the
electric field distribution, the enhancement effect near slot edges
is preserved.
[0128] Another aspect of the research was fabrication and
characterization of sample or microfluidic chambers. To apply the
local enhancement of THz coupling, the bio- or chemical material
can be immobilized on the surface, trapped at slot edges, or
scanned across a microfluidic chamber. The materials of interest
can be in solid or fluidic form. Microfluidic channels were
fabricated using polydimethylsiloxane (PDMS) as the polymeric
material onto which channels were micromolded. Inexpensive
disposable periodic Lab-on-chip structures can be used for enhanced
THz coupling and detection.
[0129] The slots can be scanned across the material sample to
enhance local coupling and thereby improve the chemical resolution
and sensitivity of the detector to THz imaging. The linear array of
several integrated THz sensor detectors can be designed and
fabricated to provide the capability for a two-dimensional imaging.
One of possible solutions for realization a proposed imaging
technology is to use a linear detector array of micron/sub-micron
size detector elements with a coupling structure, antenna, at each
element to probe several slots. Only short distance movement of the
detector assembly over the slot width will be required in this
case.
[0130] FIGS. 14 and 15 demonstrate the existing capabilities to
fabricate a Schottky diode or bolometer detector array with the
spacing between elements .about.40 .mu.m [27,28]. FIG. 15
illustrates an array section 1500 including low band pass filters
1504 and slot ring antennas 1502, and an HEB superconducting bridge
1506.
[0131] FIG. 16 shows (not in scale) an example of a detector
assembly 1606 combined with a sample or microfluidic channel 1612
(5-50 .mu.m wide, 1 .mu.m deep, 1-2 cm long), with a 10-50 .mu.m
transparent substrate, that is, a backing support 1610 to enable
handing, is filled with bio-material 1604. In this embodiment a 2-5
.mu.m Au edge layer 1602 is patterned on the top of channel
structure, although other semiconductors as taught herein can be
used. A movable stage with an XYZ controller 1608 is placed at one
end of the channel 1612. As can be seen, linear polarized THz
radiation 1614 is presented at right angles to the substrate
1610.
[0132] The precise control of the THz sensor position, especially
of the sensing probe, has to be implemented in order to enable the
sensor to approach near the surface of a sample and to scan along
the plane of the periodic structure. Long focused optical
components can be utilized for precise location of sensing antennas
at the distance of about 1-3 .mu.m from the sampling material.
Electric (for example, capacitive) sensors can be used as well.
[0133] The disclosed detection system can include variety of
miniaturized THz near-field sensors as listed above. Another
application of the invention is monitoring changes of dielectric
properties of bio-materials in biophysical processes, for example,
denaturation of DNA, folding-unfolding of proteins, structural
conformational changes of biomolecules in interactions with drags,
and monitoring other processes for a broad bio-medical and
pharmaceutical research.
[0134] FIG. 17 illustrates a detection device 1700 wherein the THz
illumination 1701 is applied from the top down. A plate of quartz
1710 has InSb 1712 bonded to the plate 1710 effectively forming
slots 1714. The mid-plate 1720 contains the fluidic cells 1722 with
an inlet and outlet. The mid-plate 1720 is adjacent to the quartz
bottom plate 1730 that contains a translatable piezo stage with THz
detectors. The near field detectors can be less than 0.1 .mu.m from
the fluidic cells.
[0135] FIGS. 18A and 18B are illustrative arrangements for the
microfluidic cells. In FIG. 18A the cell 1800 has an inlet 1802
that is connected to an outlet 1804 by channel 1808. In FIG. 18B
the biomolecules enter the cell at inlet 1 (1842) and the reagent
at inlet 2 (1840) and are mixed at the joining point 1830. The
biomolecules are moved into the trapping region 1836 where they are
exposed to THz radiation 1832. A THz detector receives the
resulting radiation 1834. The biomolecules then move to the outlet
1838. The cell can be used for real time monitoring of
processes.
[0136] FIG. 19 demonstrates the dramatic difference in transmission
spectra of a single and double-stranded DNA that can be used in the
proposed monitors. FIG. 19a shows similar possibilities for
monitoring conformational change of proteins.
[0137] FIG. 20 shows the schematic layout for the experimental
system. [0138] The system composes of [0139] THz source (GHz signal
generator 2010, frequency multiplier 2008 and power supply 2006 for
the source); [0140] collimating devices 2012 (an off-axis parabolic
mirror 2012 and an hemispheric silicon lens); [0141] horn 2012;
[0142] periodic slot chip 2014 combined with microfluidic cell and
mounted on the planar surface of silicon lens 2024; [0143] detector
assembly chip 2016 (beam lead probe, transmission line, Schottky
diode and detector circuit); [0144] motorized XYZ stage with
controller 2022; [0145] the dc voltage measurement device (i.e. a
lock-in amplifier) 2002, and [0146] controlling computer 2004.
[0147] The THz radiation required to illuminate the periodic
structure is generated by multiplying the low frequency radiation
using a frequency multiplier (36 times) as can be obtained from a
source such as Virginia Diodes Inc., of Charlottesville Va. System
path loss is minimized by using reflectors (rather than lens) as
well as an anti-refection coating on the surface of the
hemispherical lens. The lens assembly is mounted to a platen. The
integrated THz antenna is scanning transmitted beam over the sample
material put into a microfluidic channel using precision XYZ
positioners.
[0148] Some exemplary products and services that various
embodiments of the present invention method and system may be
utilized for may comprise, but not limited thereto, the
following:
[0149] Transportation security:
[0150] Portable scanners to detect explosive residues or bio
hazards on clothing, bags, in vehicles, in trains, metro stations,
airports, on board of ships, on bridges, in tunnels.
[0151] Public safety:
[0152] Portable scanners to detect explosive residues or bio
hazards in public areas, buildings.
[0153] Quality of water monitoring.
[0154] Military
[0155] Compact remote sensors to detect explosives or bio hazards
that can be installed as stand alone devices, as well as on
buildings, structures, put on unmanned airplanes, unmanned land
vehicles.
[0156] Light weight battlefield detectors that can be carried by
soldiers.
[0157] Drug development:
[0158] Detectors for real-time monitoring of drug--bacteria cell
wall interaction, for testing the effectiveness of bacteria or
virus destruction by drugs under development.
[0159] Medicine
[0160] Rapid tissue testing, cell testing for skin cancer
diagnostics.
[0161] Biomaterial Applications
[0162] Portable devices for biomaterial structure testing.
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[0199] It should be appreciated that aspects of various embodiments
of the present invention method and system may be implemented with
the method and system disclosed in the following, the disclosures
of which are incorporated herein by reference, as though recited in
full: [0200] U.S. Pat. No. 6,977,767 Plasmonic nanophotonics
methods, materials, and apparatuses; [0201] U.S. Pat. No. 7,170,085
Frequency selective terahertz radiation detector; and [0202] U.S.
Pat. Application Publication No. 2005/0230705 A1 to Taylor, Geoff
W.
* * * * *