U.S. patent application number 13/832051 was filed with the patent office on 2013-08-01 for extremely low resistance compositions and methods for creating same.
This patent application is currently assigned to Ambature, LLC. The applicant listed for this patent is Ambature, LLC. Invention is credited to Timothy S. Cale, Douglas J. Gilbert.
Application Number | 20130196858 13/832051 |
Document ID | / |
Family ID | 46928002 |
Filed Date | 2013-08-01 |
United States Patent
Application |
20130196858 |
Kind Code |
A1 |
Gilbert; Douglas J. ; et
al. |
August 1, 2013 |
Extremely Low Resistance Compositions and Methods for Creating
Same
Abstract
The invention pertains to creating new extremely low resistance
("ELR") materials, which may include high temperature
superconducting ("HTS") materials. In some implementations of the
invention, an ELR material may be modified by depositing a layer of
modifying material unto the ELR material to form a modified ELR
material. The modified ELR material has improved operational
characteristics over the ELR material alone. Such operational
characteristics may include operating at increased temperatures or
carrying additional electrical charge or other operational
characteristics. In some implementations of the invention, the ELR
material is a cuprate-perovskite, such as, but not limited to
BSSCO. In some implementations of the invention, the modifying
material is a conductive material that bonds easily to oxygen, such
as, but not limited to, chromium.
Inventors: |
Gilbert; Douglas J.;
(Flagstaff, AZ) ; Cale; Timothy S.; (Phoenix,
AZ) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Ambature, LLC; |
Cupertino |
CA |
US |
|
|
Assignee: |
Ambature, LLC
Cupertino
CA
|
Family ID: |
46928002 |
Appl. No.: |
13/832051 |
Filed: |
March 15, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13076188 |
Mar 30, 2011 |
8404620 |
|
|
13832051 |
|
|
|
|
12794688 |
Jun 4, 2010 |
8211833 |
|
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13076188 |
|
|
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|
Current U.S.
Class: |
505/236 ; 427/62;
428/471; 428/702; 505/237; 505/470 |
Current CPC
Class: |
Y10T 428/31678 20150401;
H01L 39/2422 20130101; H01L 39/2464 20130101; H01L 39/128
20130101 |
Class at
Publication: |
505/236 ;
505/470; 505/237; 428/471; 428/702; 427/62 |
International
Class: |
H01L 39/12 20060101
H01L039/12 |
Claims
1. A composition comprising: a first layer comprising BSSCO; and a
second layer comprising a modifying material, wherein the modifying
material of the second layer is bonded to the BSSCO of the first
layer, wherein the modifying material comprises an element selected
from the group consisting of: chromium, copper, bismuth, cobalt,
vanadium, titanium, rhodium, beryllium, gallium, selenium, and
silver.
2. The composition of claim 1, wherein the modifying material of
the second layer is bonded to a face of the BSSCO of the first
layer, wherein the face is not substantially perpendicular to a
c-axis of the BSSCO.
3. The composition of claim 1, wherein the modifying material of
the second layer is bonded to a face of the BSSCO of the first
layer, wherein the face is substantially perpendicular to any line
in an "a-b" face of the BSSCO.
4. The composition of claim 1, wherein the modifying material of
the second layer is bonded to a face of the BSSCO of the first
layer, wherein the face is substantially perpendicular to a b-axis
of the BSSCO.
5. The composition of claim 1, wherein the modifying material of
the second layer is bonded to a face of the BSSCO of the first
layer, wherein the face is substantially perpendicular to an a-axis
of the BSSCO.
6. The composition of claim 1, wherein the modifying material of
the second layer is bonded to a face of the BSSCO of the first
layer, wherein the face is substantially parallel to the
c-axis.
7. The composition of claim 1, wherein the composition has improved
operating characteristics over those of BSSCO.
8. The composition of claim 1, wherein the composition operates at
a higher temperature than that of BSSCO.
9. The composition of claim 8, wherein the composition demonstrates
extremely low resistance at a higher temperature than that of
BSSCO.
10. The composition of claim 8, wherein the composition transitions
from a non-ELR state to a ELR state at a temperature higher than
that of BSSCO.
11. The composition of claim 1, wherein the composition has a
transition temperature greater than that of BSSCO.
12. The composition of claim 8, wherein the composition operates at
a temperature greater than any one of the following temperatures:
100K, 150K, 200K, 250K, or 300K.
13. The composition of claim 1, wherein the composition carries a
greater amount of current in an ELR state than that carried by
BSSCO in its ELR state.
14. The composition of claim 1, wherein the second layer is
deposited onto the first layer.
15. The composition of claim 1, wherein the first layer is
deposited onto the second layer.
16. The composition of claim 1, wherein the BSSCO of the first
layer is formed on the second layer.
17. A method comprising: bonding a modifying material to a face of
BSSCO, wherein the modifying material comprises an element selected
from the group consisting of: chromium, copper, bismuth, cobalt,
vanadium, titanium, rhodium, beryllium, gallium, selenium, and
silver.
18. The method of claim 17, wherein the face of the BSSCO is not
substantially perpendicular to a c-axis of the BSSCO.
19. The method of claim 17, wherein bonding a modifying material to
a face of BSSCO comprises depositing the modifying material onto
the BSSCO.
20. The method of claim 17, wherein bonding a modifying material to
a face of BSSCO comprises forming the BSSCO on the modifying
material.
21. The method of claim 17, wherein bonding a modifying material to
a face of BSSCO comprises bonding a first layer comprising the
modifying material to a second layer comprising the BSSCO.
22. A composition comprising: a first layer comprising BSSCO; and a
second layer comprising a modifying material, wherein the modifying
material of the second layer is bonded to the BSSCO of the first
layer, wherein the modifying material is a conductive material that
bonds easily with oxygen.
23. The composition of claim 22, wherein the modifying material is
an element selected from the group consisting of: chromium, copper,
bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium,
selenium, and silver.
24. A method comprising: bonding a modifying material to a face of
an HTS perovskite material, wherein the HTS perovskite is BSSCO,
wherein the modifying material comprises an element selected from
the group consisting of: chromium, copper, bismuth, cobalt,
vanadium, titanium, rhodium, beryllium, gallium, selenium, and
silver.
25. A composition comprising: a first layer comprising an extremely
low resistance material, wherein the extremely low resistance
material is BSSCO; a second layer comprising a modifying material,
wherein the second layer is bonded to the first layer; a third
layer comprising the extremely low resistance material; and a
fourth layer of the modifying material, wherein the third layer is
bonded to the fourth layer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation application of U.S.
application Ser. No. 13/076,188 filed Mar. 30, 2011, which claims
priority to U.S. application Ser. No. 12/794,688, entitled "An
Extremely Low Resistance Composition and Methods for Creating
Same," filed on Jun. 4, 2010, which applications are incorporated
herein by reference in their entirety.
FIELD OF THE INVENTION
[0002] The invention is generally related to materials with
extremely low resistance ("ELR materials") at high temperatures,
and more particularly to modifying ELR materials, including various
existing high temperature superconducting ("HTS") materials, to
operate at higher temperatures and/or with increased charge
carrying capacity.
BACKGROUND OF THE INVENTION
[0003] Ongoing research attempts to achieve new materials with
improved operational characteristics, for example, reduced
electrical resistance at higher temperatures over that of existing
materials, including superconducting materials. Scientists have
theorized a possible existence of a "perfect conductor," or a
material that operates with extremely low resistance, but that may
not necessarily demonstrate all the conventionally accepted
characteristics of a superconducting material.
[0004] Notwithstanding their name, conventional high temperature
superconducting ("HTS") materials still operate at very low
temperatures. In fact, most commonly used HTS materials still
require use of a cooling system that uses liquids with very low
boiling points (e.g., liquid nitrogen). Such cooling systems
increase implementation costs and discourage widespread commercial
and consumer use and/or application of such materials.
[0005] What is needed are improved ELR materials that operate with
improved operating characteristics over conventional ELR
materials.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate various
exemplary implementations of the invention and together with the
detailed description serve to explain various principles and/or
aspects of the invention.
[0007] FIG. 1 illustrates a crystalline structure of an exemplary
ELR material as viewed from a first perspective.
[0008] FIG. 2 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0009] FIG. 3 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0010] FIG. 4 illustrates a single unit cell of an exemplary ELR
material.
[0011] FIG. 5 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0012] FIG. 6 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0013] FIG. 7 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0014] FIG. 8 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0015] FIG. 9 illustrates a crystalline structure of an exemplary
ELR material as viewed from a second perspective.
[0016] FIG. 10 illustrates a modified crystalline structure,
according to various implementations of the invention, of an ELR
material as viewed from a second perspective.
[0017] FIG. 11 illustrates a modified crystalline structure,
according to various implementations of the invention, of an ELR
material as viewed from a first perspective.
[0018] FIG. 12 illustrates a crystalline structure of an exemplary
ELR material as viewed from a third perspective.
[0019] FIG. 13 illustrates a reference frame useful for describing
various implementations of the invention.
[0020] FIGS. 14A-14G illustrate test results demonstrating various
operational characteristics of a modified ELR material.
[0021] FIG. 15 illustrates test results for a modified ELR
material, namely with chromium as a modifying material and YBCO as
an ELR material.
[0022] FIG. 16 illustrates test results for a modified ELR
material, namely with vanadium as a modifying material and YBCO as
an ELR material.
[0023] FIG. 17 illustrates test results for a modified ELR
material, namely with bismuth as a modifying material and YBCO as
an ELR material.
[0024] FIG. 18 illustrates test results for a modified ELR
material, namely with copper as a modifying material and YBCO as an
ELR material.
[0025] FIG. 19 illustrates test results for a modified ELR
material, namely with cobalt as a modifying material and YBCO as an
ELR material.
[0026] FIG. 20 illustrates test results for a modified ELR
material, namely with titanium as a modifying material and YBCO as
an ELR material.
[0027] FIGS. 21A-21B illustrate test results for a modified ELR
material, namely with chromium as a modifying material and BSCCO as
an ELR material.
[0028] FIG. 22 illustrates an arrangement of an ELR material and a
modifying material useful for propagating electrical charge
according to various implementations of the invention.
[0029] FIG. 23 illustrates multiple layers of crystalline
structures of an exemplary surface-modified ELR material according
to various implementations of the invention.
[0030] FIG. 24 illustrates a c-film of ELR material according to
various implementations of the invention.
[0031] FIG. 25 illustrates a c-film with appropriate surfaces of
ELR material according to various implementations of the
invention.
[0032] FIG. 26 illustrates a c-film with appropriate surfaces of
ELR material according to various implementations of the
invention.
[0033] FIG. 27 illustrates a modifying material layered onto
appropriate surfaces of ELR material according to various
implementations of the invention.
[0034] FIG. 28 illustrates a modifying material layered onto
appropriate surfaces of ELR material according to various
implementations of the invention.
[0035] FIG. 29 illustrates a c-film with an etched surface
including appropriate surfaces of ELR material according to various
implementations of the invention.
[0036] FIG. 30 illustrates a modifying material layered onto an
etched surface of a c-film with appropriate surfaces of ELR
material according to various implementations of the invention.
[0037] FIG. 31 illustrates an a-b film, including an optional
substrate, with appropriate surfaces of ELR material according to
various implementations of the invention.
[0038] FIG. 32 illustrates a modifying material layered onto
appropriate surfaces of ELR material of an a-b film according to
various implementations of the invention.
[0039] FIG. 33 illustrates various exemplary arrangements of layers
of ELR material, modifying material, buffer or insulating layers,
and/or substrates in accordance with various implementations of the
invention.
[0040] FIG. 34 illustrates a process for forming a modified ELR
material according to various implementations of the invention.
[0041] FIG. 35 illustrates an example of additional processing that
may be performed according to various implementations of the
invention.
[0042] FIG. 36 illustrates a process for forming a modified ELR
material according to various implementations of the invention.
SUMMARY OF THE INVENTION
[0043] Generally speaking, various implementations of the invention
relate to new ELR materials and/or processes for creating new ELR
materials. In some implementations of the invention, existing ELR
materials, including existing HTS materials, are modified to create
modified ELR materials with improved operating characteristics.
These operating characteristics may include, but are not limited
to, operating in an extremely low resistance state at increased
temperatures, operating with increased charge carrying capacity at
the same (or higher) temperatures, and/or other improved operating
characteristics. With regard to HTS materials, these operating
characteristics may correspondingly include, but are not limited
to, operating in a superconducting state at increased temperatures,
operating with increased charge carrying capacity at the same (or
higher) temperatures, and/or other improved operating
characteristics.
[0044] In some implementations, a modifying material is layered
onto an ELR material to form a modified ELR material that operates
at a higher temperature than that of the ELR material without a
modifying material. Exemplary ELR materials may be selected from a
family of HTS materials known as cuprate-perovskite ceramic
materials. In some implementations of the invention, modifying
material may be a conductive material. In some implementations of
the invention, modifying material may be a material with high
oxygen affinity (i.e., a material that bonds easily with oxygen)
("oxygen bonding material"). In some implementations of the
invention, modifying material may be a conductive material that
bonds easily with oxygen ("oxygen bonding conductive materials").
Such oxygen bonding conductive materials may include, but are not
limited to: chromium, copper, bismuth, cobalt, vanadium, and
titanium. Such oxygen bonding conductive materials may also
include, but are not limited to: rhodium or beryllium. Other
modifying materials may include gallium or selenium. Other
modifying materials may include silver.
[0045] In some implementations of the invention, a composition
comprises an ELR material and a modifying material bonded to the
ELR material.
[0046] In some implementations of the invention, a composition
comprises an extremely low resistance material, and a modifying
material bonded to the extremely low resistance material, where the
composition has improved operating characteristics over the
extremely low resistance material.
[0047] In some implementations of the invention, a composition
comprises an extremely low resistance material, and a modifying
material bonded to the extremely low resistance material such that
the composition operates in an ELR state at a temperature greater
than that of the extremely low resistance material alone or without
the modifying material.
[0048] In some implementations of the invention, a method comprises
bonding a modifying material to an extremely low resistance
material to form a modified extremely low resistance material,
where the modified extremely low resistance material operates at a
temperature greater than that of the extremely low resistance
material alone or without the modifying material.
[0049] In some implementations of the invention, a method for
creating an extremely low resistance material comprises depositing
a modifying material onto an initial extremely low resistance
material thereby creating the extremely low resistance material,
wherein the extremely low resistance material has improved
operating characteristics over the initial extremely low resistance
material alone or without the modifying material.
[0050] In some implementations of the invention, a method comprises
bonding a modifying material to a superconducting material to form
a modified superconducting material such that the modified
superconducting material operates in superconducting state at a
temperature greater than that of the superconducting material alone
or without the modifying material.
[0051] In some implementations of the invention, a composition
comprises a first layer comprising an extremely low resistance
material, and a second layer comprising a modifying material, where
the second layer is bonded to the first layer. In some
implementations of the invention, a composition comprises a first
layer comprising an extremely low resistance material, a second
layer comprising a modifying material, where the second layer is
bonded to the first layer, a third layer comprising the extremely
low resistance material, and a fourth layer of the modifying
material, where the third layer is bonded to the fourth layer. In
some implementations of the invention, the second layer is
deposited onto the first layer. In some implementations of the
invention, the first layer is deposited onto the second layer. In
some implementations of the invention, the extremely low resistance
material of the first layer is formed on the second layer. In some
implementations of the invention, the first layer has a thickness
of at least a single crystalline unit cell of the extremely low
resistance material. In some implementations of the invention, the
first layer has a thickness of several crystalline unit cells of
the extremely low resistance material. In some implementations of
the invention, the second layer has a thickness of at least a
single atom of the modifying material. In some implementations of
the invention, the second layer has a thickness of several atoms of
the modifying material.
[0052] In some implementations of the invention, a composition
comprises a first layer comprising BSSCO, and a second layer
comprising a modifying material, wherein the modifying material of
the second layer is bonded to the BSSCO of the first layer, wherein
the modifying material is an element selected as any one or more of
the group consisting of chromium, copper, bismuth, cobalt,
vanadium, titanium, rhodium, beryllium, gallium, selenium, and
silver. In some implementations of the invention, the modifying
material of the second layer is bonded to a face of the BSSCO of
the first layer, where the face is not substantially perpendicular
to a c-axis of the BSSCO. In some implementations of the invention,
the modifying material of the second layer is bonded to a face of
the BSSCO of the first layer, where the face is substantially
perpendicular to any line in an "a-b" face of the BSSCO. In some
implementations of the invention, the modifying material of the
second layer is bonded to a face of the BSSCO of the first layer,
where the face is substantially perpendicular to a b-axis of the
BSSCO. In some implementations of the invention, the modifying
material of the second layer is bonded to a face of the BSSCO of
the first layer, where the face is substantially perpendicular to
an a-axis of the BSSCO. In some implementations of the invention,
the modifying material of the second layer is bonded to a face of
the BSSCO of the first layer, where the face is substantially
parallel to the c-axis.
[0053] In any of the aforementioned or following implementations of
the invention, the ELR material comprises a HTS material. In any of
the aforementioned or following implementations of the invention,
the ELR material comprises an HTS perovskite material. In any of
the aforementioned or following implementations of the invention,
the HTS perovskite material may be selected from the groups
generically referred to as LaBaCuO, LSCO, YBCO, BSCCO, TBCCO,
HgBa.sub.2Ca.sub.2Cu.sub.3O.sub.x, or other HTS perovskite
materials. In any of the aforementioned or following
implementations of the invention, the modifying materials may be a
conductive material that bonds easily with oxygen. In any of the
aforementioned or following implementations of the invention, the
modifying materials may be any one or combination of chromium,
copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium,
gallium, selenium, and/or silver. In any of the aforementioned or
following implementations of the invention, various combinations of
the ELR materials and the modifying materials may be used. In any
of the aforementioned or following implementations of the
invention, the ELR material is BSSCO and the modifying material is
chromium.
[0054] In any of the aforementioned or following implementations of
the invention, the composition operates at a higher temperature
than the extremely low resistance material alone or without the
modifying material. In any of the aforementioned or following
implementations of the invention, the composition demonstrates
extremely low resistance at a higher temperature than that of the
extremely low resistance material alone or without the modifying
material. In any of the aforementioned or following implementations
of the invention, the composition transitions from a non-ELR state
to an ELR state at a temperature higher than that of the extremely
low resistance material alone or without the modifying material. In
any of the aforementioned or following implementations of the
invention, the composition has a transition temperature greater
than that of the extremely low resistance material alone or without
the modifying material. In any of the aforementioned or following
implementations of the invention, the composition carries a greater
amount of current in an ELR state than that carried by the
extremely low resistance material alone or without the modifying
material.
[0055] In any of the aforementioned or following implementations,
the composition operates in an extremely low resistance state at a
higher temperature than the extremely low resistance material alone
or without the modifying material. In any of the aforementioned or
following implementations, the composition operates in an extremely
low resistance state at temperatures greater than one or more of
the following temperatures: 100K, 110K, 120K, 130K, 140K, 150K,
160K, 170K, 180K, 190K, 200K, 210K, 220K, 230K, 240K, 250K, 260K,
270K, 280K, 290K, 300K, or 310K.
[0056] In any of the aforementioned or following implementations
where the ELR material is BSSCO, the composition has improved
operating characteristics over those of BSSCO alone or without the
modifying material. In any of the aforementioned or following
implementations where the ELR material is BSSCO, the composition
operates at a higher temperature than that of BSSCO alone or
without the modifying material. In any of the aforementioned or
following implementations where the ELR material is BSSCO, the
composition demonstrates extremely low resistance at a higher
temperature than that of BSSCO alone or without the modifying
material. In any of the aforementioned or following implementations
where the ELR material is BSSCO, the composition transitions from a
non-ELR state to an ELR state at a temperature higher than that of
BSSCO alone or without the modifying material. In any of the
aforementioned or following implementations where the ELR material
is BSSCO, the composition has a transition temperature greater than
that of BSSCO alone or without the modifying material. In any of
the aforementioned or following implementations where the ELR
material is BSSCO, the composition carries a greater amount of
current in an ELR state than that carried by BSSCO in its ELR state
alone or without the modifying material.
[0057] In some implementations of the invention, a product or
composition is produced by any of the aforementioned methods or
processes.
DETAILED DESCRIPTION
[0058] Various features, advantages, and implementations of the
invention may be set forth or be apparent from consideration of the
following detailed description, the drawings, and the claims. It is
to be understood that the detailed description and the drawings are
exemplary and intended to provide further explanation without
limiting the scope of the invention except as set forth in the
claims.
[0059] For purposes of this description, extremely low resistance
("ELR") materials may include: superconducting materials,
including, but not limited to, HTS materials; perfectly conducting
materials (e.g., perfect conductors); and other conductive
materials with extremely low resistance. For purposes of this
description, operating characteristics with regard to ELR materials
and/or various implementations of the invention may include, but
are not limited to, a resistance of the ELR material in its ELR
state (for example, with regard to superconductors, a
superconducting state), a transition temperature of the ELR
material to its ELR state, a charge propagating capacity of the ELR
material in its ELR state, one or more magnetic properties of the
ELR material, one or more mechanical properties of the ELR
material, and/or other operating characteristics of the ELR
material. Further, for purposes of this description, improved
operating characteristics may include, but are not limited to,
operating in an ELR state (including, for example, a
superconducting state) at higher temperatures, operating with
increased charge propagating capacity at the same (or higher)
temperatures, operating with improved magnetic properties,
operating with improved mechanical properties, and/or other
improved operating characteristics.
[0060] For purposes of this description, "extremely low resistance"
is resistance similar in magnitude to the flux flow resistance of
Type II superconducting materials in their superconducting state,
and may generally be expressed in terms of resistivity in a range
of zero Ohm-cm to one fiftieth ( 1/50) of the resistivity of
substantially pure copper at 293K. For example, as used herein,
substantially pure copper is 99.999% copper. In various
implementations of the invention, portions of ELR materials have a
resistivity in a range of zero Ohm-cm to 3.36.times.10.sup.-8
Ohm-cm.
[0061] As generally understood, the transition temperature is a
temperature below which the ELR material "operates" or exhibits (or
begins exhibiting) extremely low resistance, and/or other
phenomenon associated with ELR materials. When operating with
extremely low resistance, the ELR material is referred to as being
in an ELR state. At temperatures above the transition temperature,
the ELR material ceases to exhibit extremely low resistance and the
ELR material is referred to as being in its non-ELR state. In other
words, the transition temperature corresponds to a temperature at
which the ELR material changes between its non-ELR state and its
ELR state. As would be appreciated, for some ELR materials, the
transition temperature may be a range of temperatures over which
the ELR material changes between its non-ELR state and its ELR
state. As would also be appreciated, the ELR material may have
hysteresis in its transition temperature with one transition
temperature as the ELR material warms and another transition
temperature as the ELR material cools.
[0062] FIG. 13 illustrates a reference frame 1300 which may be used
to describe various implementations of the invention. Reference
frame 1300 includes a set of axes referred to as an a-axis, a
b-axis, and a c-axis. For purposes of this description: reference
to the a-axis includes the a-axis and any other axis parallel
thereto; reference to the b-axis includes the b-axis and any other
axis parallel thereto; and reference to the c-axis includes the
c-axis and any other axis parallel thereto. Various pairs of the
axes form a set of planes in reference frame 1300 referred to as an
a-plane, a b-plane, and a c-plane, where: the a-plane is formed by
the b-axis and the c-axis and is perpendicular to the a-axis; the
b-plane is formed by the a-axis and the c-axis and is perpendicular
to the b-axis; and the c-plane is formed by the a-axis and the
b-axis and is perpendicular to the c-axis. For purposes of this
description: reference to the a-plane includes the a-plane and any
plane parallel thereto; reference to the b-plane includes the
b-plane and any plane parallel thereto; and reference to the
c-plane includes the c-plane and any plane parallel thereto.
Further, with regard to various "faces" or "surfaces" of the
crystalline structures described herein, a face parallel to the
a-plane may sometimes be referred to as a "b-c" face; a face
parallel to the b-plane may sometimes be referred to as an "a-c"
face; and a face parallel to the c-plane may sometimes be referred
to as a "a-b" face.
[0063] FIG. 1 illustrates a crystalline structure 100 of an
exemplary ELR material as viewed from a first perspective, namely,
a perspective perpendicular to an "a-b" face of crystalline
structure 100 and parallel to the c-axis thereof. FIG. 2
illustrates crystalline structure 100 as viewed from a second
perspective, namely, a perspective perpendicular to a "b-c" face of
crystalline structure 100 and parallel to the a-axis thereof. For
purposes of this description, the exemplary ELR material
illustrated in FIG. 1 and FIG. 2 is generally representative of
various ELR materials. In some implementations of the invention,
the exemplary ELR material may be a representative of a family of
superconducting materials referred to as mixed-valence copper-oxide
perovskites. The mixed-valence copper-oxide perovskite materials
include, but are not limited to, LaBaCuO.sub.x, LSCO (e.g.,
La.sub.2-xSr.sub.xCuO.sub.4, etc.), YBCO (e.g.,
YBa.sub.2Cu.sub.3O.sub.7, etc.), BSCCO (e.g.,
Bi.sub.2Sr.sub.2Ca.sub.2Cu.sub.3O.sub.10, etc.), TBCCO (e.g.,
TI.sub.2Ba.sub.2Ca.sub.2Cu.sub.3O.sub.10 or
TI.sub.mBa.sub.2Ca.sub.n-1 Cu.sub.nO.sub.2n+m+2+.delta.),
HgBa.sub.2Ca.sub.2Cu.sub.3O.sub.x, and other mixed-valence
copper-oxide perovskite materials. The other mixed-valence
copper-oxide perovskite materials may include, but are not limited
to, various substitutions of the cations as would be appreciated.
As would also be appreciated, the aforementioned named
mixed-valence copper-oxide perovskite materials may refer to
generic classes of materials in which many different formulations
exist. In some implementations of the invention, the exemplary ELR
materials may include an HTS material outside of the family of
mixed-valence copper-oxide perovskite materials ("non-perovskite
materials"). Such non-perovskite materials may include, but are not
limited to, iron pnictides, magnesium diboride (MgB.sub.2), and
other non-perovskites.
In some implementations of the invention, the exemplary ELR
materials may be other superconducting materials.
[0064] Many ELR materials have a structure similar to (though not
necessarily identical to) that of crystalline structure 100 with
different atoms, combinations of atoms, and/or lattice arrangements
as would be appreciated. As illustrated in FIG. 2, crystalline
structure 100 is depicted with two complete unit cells of the
exemplary ELR material, with one unit cell above reference line 110
and one unit cell below reference line 110. FIG. 4 illustrates a
single unit cell 400 of the exemplary ELR material.
[0065] Generally speaking and as would be appreciated, a unit cell
400 of the exemplary ELR material includes six "faces": two "a-b"
faces that are parallel to the c-plane; two "a-c" faces that are
parallel to the b-plane; and two "b-c" faces that are parallel to
the a-plane (see, e.g., FIG. 13). As would also be appreciated, a
"surface" of ELR material in the macro sense may be comprised of
multiple unit cells 400 (e.g., hundreds, thousands or more).
Reference in this description to a "surface" or "face" of the ELR
material being parallel to a particular plane (e.g., the a-plane,
the b-plane or the c-plane) indicates that the surface is formed
predominately (i.e., a vast majority) of faces of unit cell 400
that are substantially parallel to the particular plane.
Furthermore, reference in this description to a "surface" or "face"
of the ELR material being parallel to planes other than the
a-plane, the b-plane, or the c-plane (e.g., an ab-plane as
described below, etc.) indicates that the surface is formed from
some mixture of faces of unit cell 400 that, in the aggregate macro
sense, form a surface substantially parallel to such other
planes.
[0066] Studies indicate that some ELR materials demonstrate an
anisotropic (i.e., directional) dependence of the resistance
phenomenon. In other words, resistance at a given temperature and
current density depends upon a direction in relation to crystalline
structure 100. For example, in their ELR state, some ELR materials
can carry significantly more current, at extremely low resistance,
in the direction of the a-axis and/or in the direction of the
b-axis than such materials do in the direction of the c-axis. As
would be appreciated, various ELR materials exhibit anisotropy in
various performance phenomenon, including the resistance
phenomenon, in directions other than, in addition to, or as
combinations of those described above. For purposes of this
description, reference to a material that tends to exhibit the
resistance phenomenon (and similar language) in a first direction
indicates that the material supports such phenomenon in the first
direction; and reference to a material that tends not to exhibit
the resistance phenomenon (and similar language) in a second
direction indicates that the material does not support such
phenomenon in the second direction or does so in a reduced manner
from other directions.
[0067] With reference to FIG. 2, conventional understanding of
known ELR materials has thus far failed to appreciate an aperture
210 formed within crystalline structure 100 by a plurality of
aperture atoms 250 as being responsible for the resistance
phenomenon. (See e.g., FIG. 4, where an aperture is not readily
apparent in a depiction of single unit cell 400.) In some sense,
aperture atoms 250 may be viewed as forming a discrete atomic
"boundary" or "perimeter" around aperture 210. In some
implementations of the invention and as illustrated in FIG. 2,
aperture 210 appears between a first portion 220 and a second
portion 230 of crystalline structure 100 although in some
implementations of the invention, aperture 210 may appear in other
portions of various other crystalline structures. Aperture 210 is
illustrated in FIG. 2 based on depictions of atoms as simple
"spheres;" it would be appreciated that such apertures are related
to and shaped by, among other things, electrons and their
associated electron densities (not otherwise illustrated) of
various atoms in crystalline structure 100, including aperture
atoms 250.
[0068] According to various aspects of the invention, aperture 210
facilitates propagation of electrical charge through crystalline
structure 100 and when aperture 210 facilitates propagation of
electrical charge through crystalline structure 100, ELR material
operates in its ELR state. For purposes of this description,
"propagates," "propagating," and/or "facilitating propagation"
(along with their respective forms) generally refer to "conducts,"
"conducting" and/or "facilitating conduction" and their respective
forms; "transports," "transporting" and/or "facilitating transport"
and their respective forms; "guides," "guiding" and/or
"facilitating guidance" and their respective forms; and/or "carry,"
"carrying" and/or "facilitating carrying" and their respective
forms. For purposes of this description, electrical charge may
include positive charge or negative charge, and/or pairs or other
groupings of such charges; further, such charge may propagate
through crystalline structure 100 in the form of one or more
particles or in the form of one or more waves or wave packets.
[0069] In some implementations of the invention, propagation of
electrical charge through crystalline structure 100 may be in a
manner analogous to that of a waveguide. In some implementations of
the invention, aperture 210 may be a waveguide with regard to
propagating electrical charge through crystalline structure 100.
Waveguides and their operation are generally well understood. In
particular, walls surrounding an interior of the waveguide may
correspond to the boundary or perimeter of aperture atoms 250
around aperture 210. One aspect relevant to an operation of a
waveguide is its cross-section. At the atomic level, aperture 210
and/or its cross-section may change substantially with changes in
temperature of the ELR material. For example, in some
implementations of the invention, changes in temperature of the ELR
material may cause changes in aperture 210, which in turn may cause
the ELR material to transition between its ELR state to its non-ELR
state. For example, as temperature of the ELR material increases,
aperture 210 may restrict or impede propagation of electrical
charge through crystalline structure 100 and the corresponding ELR
material may transition from its ELR state to its non-ELR state.
Likewise, for example, as temperature of the ELR material
decreases, aperture 210 may facilitate (as opposed to restrict or
impede) propagation of electrical charge through crystalline
structure 100 and the corresponding ELR material may transition
from its non-ELR state to its ELR state.
[0070] Apertures, such as aperture 210 in FIG. 2, exist in various
ELR materials, such as, but not limited to, various ELR materials
illustrated in FIG. 3 and FIGS. 5-9, etc., and described below. As
illustrated, such apertures are intrinsic to the crystalline
structure of some or all the ELR materials. Various forms, shapes,
sizes, and numbers of apertures 210 exist in ELR materials
depending on the precise configuration of the crystalline
structure, composition of atoms, and arrangement of atoms within
the crystalline structure of the ELR material as would be
appreciated in light of this description.
[0071] The presence and absence of apertures 210 that extend in the
direction of various axes through the crystalline structures 100 of
various ELR materials is consistent with the anisotropic dependence
demonstrated by such ELR materials. For example, ELR material 360,
which is illustrated in FIG. 3, FIG. 11, and FIG. 12, corresponds
to YBCO-123, which exhibits the resistance phenomenon in the
direction of the a-axis and the b-axis, but tends not to exhibit
the resistance phenomenon in the direction of the c-axis.
Consistent with the anisotropic dependence of the resistance
phenomenon demonstrated by YBCO-123, FIG. 3 illustrates that
apertures 310 extend through crystalline structure 300 in the
direction of the a-axis; FIG. 12 illustrates that apertures 310 and
apertures 1210 extend through crystalline structure 300 in the
direction of the b-axis; and FIG. 11 illustrates that no suitable
apertures extend through crystalline structure 300 in the direction
of the c-axis.
[0072] Aperture 210 and/or its cross-section may be dependent upon
various atomic characteristics of aperture atoms 250 and/or
"non-aperture atoms" (i.e., atoms in crystalline structure 100
other than aperture atoms 250). Such atomic characteristics
include, but are not limited to, atomic size, atomic weight,
numbers of electrons, electron structure, number of bonds, types of
bonds, differing bonds, multiple bonds, bond lengths, bond
strengths, bond angles between aperture atoms, bond angles between
aperture atoms and non-aperture atoms, and/or isotope number.
Aperture atoms 250 and non-aperture atomrs may be selected based on
their corresponding atomic characteristics to optimize aperture 210
in terms of its size, shape, rigidity, and modes of vibration (in
terms of amplitude, frequency, and direction) in relation to
crystalline structure and/or atoms therein.
[0073] According to various implementations of the invention,
changes in a physical structure of aperture 210, including changes
to a shape and/or size of its cross-section and/or changes to the
shape or size of aperture atoms 205, may have an impact on the
resistance phenomenon. For example, as temperature of crystalline
structure 100 increases, the cross-section of aperture 210 may be
changed due to vibration of various atoms within crystalline
structure 100 as well as changes in energy states, or occupancy
thereof, of the atoms in crystalline structure 100. Physical
flexure, tension or compression of crystalline structure 100 may
also affect the positions of various atoms within crystalline
structure 100 and therefore the cross-section of aperture 210.
Magnetic fields imposed on crystalline structure 100 may also
affect the positions of various atoms within crystalline structure
100 and therefore the cross-section of aperture 210.
[0074] Phonons correspond to various modes of vibration within
crystalline structure 100. Phonons in crystalline structure 100 may
interact with electrical charge propagated through crystalline
structure 100. More particularly, phonons in crystalline structure
100 may cause atoms in crystalline structure 100 (e.g., aperture
atoms 250, non-aperture atoms, etc.) to interact with electrical
charge propagated through crystalline structure 100. Higher
temperatures result in higher phonon amplitude and may result in
increased interaction among phonons, atoms in crystalline structure
100, and such electrical charge. Various implementations of the
invention may minimize, reduce, or otherwise modify such
interaction among phonons, atoms in crystalline structure 100, and
such electrical charge within crystalline structure 100.
[0075] FIG. 3 illustrates a crystalline structure 300 of an
exemplary ELR material 360 from a second perspective. Exemplary ELR
material 360 is a superconducting material commonly referred to as
"YBCO" which, in certain formulations, has a transition temperature
of approximately 90K. In particular, exemplary ELR material 360
depicted in FIG. 3 is YBCO-123. Crystalline structure 300 of
exemplary ELR material 360 includes various atoms of yttrium ("Y"),
barium ("Ba"), copper ("Cu") and oxygen ("O"). As illustrated in
FIG. 3, an aperture 310 is formed within crystalline structure 300
by aperture atoms 350, namely atoms of yttrium, copper, and oxygen.
A cross-sectional distance between the yttrium aperture atoms in
aperture 310 is approximately 0.389 nm, a cross-sectional distance
between the oxygen aperture atoms in aperture 310 is approximately
0.285 nm, and a cross-sectional distance between the copper
aperture atoms in aperture 310 is approximately 0.339 nm.
[0076] FIG. 12 illustrates crystalline structure 300 of exemplary
ELR material 360 from a third perspective. Similar to that
described above with regard to FIG. 3, exemplary ELR material 360
is YBCO-123, and aperture 310 is formed within crystalline
structure 300 by aperture atoms 350, namely atoms of yttrium,
copper, and oxygen. In this orientation, a cross-sectional distance
between the yttrium aperture atoms in aperture 310 is approximately
0.382 nm, a cross-sectional distance between the oxygen aperture
atoms in aperture 310 is approximately 0.288 nm, and a
cross-sectional distance between the copper aperture atoms in
aperture 310 is approximately 0.339 nm. In this orientation, in
addition to aperture 310, crystalline structure 300 of exemplary
ELR material 360 includes an aperture 1210. Aperture 1210 occurs in
the direction of the b-axis of crystalline structure 300. More
particularly, aperture 1210 occurs between individual unit cells of
exemplary ELR material 360 in crystalline structure 300. Aperture
1210 is formed within crystalline structure 300 by aperture atoms
1250, namely atoms of barium, copper and oxygen. A cross-sectional
distance between the barium aperture atoms 1250 in aperture 1210 is
approximately 0.430 nm, a cross-sectional distance between the
oxygen aperture atoms 1250 in aperture 1210 is approximately 0.382
nm, and a cross-sectional distance between the copper aperture
atoms 1250 in aperture 1210 is approximately 0.382 nm. In some
implementations of the invention, aperture 1210 operates in a
manner similar to that described herein with regard to aperture
310. For purposes of this description, aperture 310 in YBCO may be
referred to as an "yttrium aperture," whereas aperture 1210 in YBCO
may be referred to as a "barium aperture," based on the
compositions of their respective aperture atoms 350, 1250.
[0077] FIG. 5 illustrates a crystalline structure 500 of an
exemplary ELR material 560 as viewed from the second perspective.
Exemplary ELR material 560 is an HTS material commonly referred to
as "HgBa.sub.2CuO.sub.4" which has a transition temperature of
approximately 94K. Crystalline structure 500 of exemplary ELR
material 560 includes various atoms of mercury ("Hg"), barium
("Ba"), copper ("Cu"), and oxygen ("O"). As illustrated in FIG. 5,
an aperture 510 is formed within crystalline structure 500 by
aperture atoms which comprise atoms of barium, copper, and
oxygen.
[0078] FIG. 6 illustrates a crystalline structure 600 of an
exemplary ELR material 660 as viewed from the second perspective.
Exemplary ELR material 660 is an HTS material commonly referred to
as "TI.sub.2Ca.sub.2Ba.sub.2Cu.sub.3O.sub.10" which has a
transition temperature of approximately 128K. Crystalline structure
600 of exemplary ELR material 660 includes various atoms of
thallium ("TI"), calcium ("Ca"), barium ("Ba"), copper ("Cu"), and
oxygen ("O"). As illustrated in FIG. 6, an aperture 610 is formed
within crystalline structure 600 by aperture atoms which comprise
atoms of calcium, barium, copper and oxygen. As also illustrated in
FIG. 6, a secondary aperture 620 may also be formed within
crystalline structure 600 by secondary aperture atoms which
comprise atoms of calcium, copper and oxygen. Secondary apertures
620 may operate in a manner similar to that of apertures 610.
[0079] FIG. 7 illustrates a crystalline structure 700 of an
exemplary ELR material 760 as viewed from the second perspective.
Exemplary ELR material 760 is an HTS material commonly referred to
as "La.sub.2CuO.sub.4" which has a transition temperature of
approximately 39K. Crystalline structure 700 of exemplary ELR
material 760 includes various atoms of lanthanum ("La"), copper
("Cu"), and oxygen ("O"). As illustrated in FIG. 7, an aperture 710
is formed within crystalline structure 700 by aperture atoms which
comprise atoms of lanthanum and oxygen.
[0080] FIG. 8 illustrates a crystalline structure 800 of an
exemplary ELR material 860 as viewed from the second perspective.
Exemplary ELR material 860 is an HTS material commonly referred to
as "As.sub.2Ba.sub.0.34Fe.sub.2K.sub.0.66" which has a transition
temperature of approximately 38K. Exemplary ELR material 860 is
representative of a family of ELR materials sometimes referred to
as "iron pnictides." Crystalline structure 800 of exemplary ELR
material 860 includes various atoms of arsenic ("As"), barium
("Ba"), iron ("Fe"), and potassium ("K"). As illustrated in FIG. 8,
an aperture 810 is formed within crystalline structure 800 by
aperture atoms which comprise atoms of potassium and arsenic.
[0081] FIG. 9 illustrates a crystalline structure 900 of an
exemplary ELR material 960 as viewed from the second perspective.
Exemplary ELR material 960 is an HTS material commonly referred to
as "MgB.sub.2" which has a transition temperature of approximately
39K. Crystalline structure 900 of exemplary ELR material 960
includes various atoms of magnesium ("Mg") and boron ("B"). As
illustrated in FIG. 9, an aperture 910 is formed within crystalline
structure 900 by aperture atoms which comprise atoms of magnesium
and boron.
[0082] The foregoing exemplary ELR materials illustrated in FIG. 3,
FIGS. 5-9, and FIG. 12 each demonstrate the presence of various
apertures within such materials. Various other ELR materials have
similar apertures. Once attributed to the resistance phenomenon,
apertures and their corresponding crystalline structures may be
exploited to improve operating characteristics of existing ELR
materials, to derive improved ELR materials from existing ELR
materials, and/or to design and formulate new ELR materials. For
convenience of description, ELR material 360 (and its attendant
characteristics and structures) henceforth generally refers to
various ELR materials, including, but not limited to, ELR material
560, ELR material 660, ELR material 760, and other ELR materials
illustrated in the drawings, not just that ELR material illustrated
and described with reference to FIG. 3.
[0083] According to various implementations of the invention, the
crystalline structure of various known ELR materials may be
modified such that the modified ELR material operates with improved
operating characteristics over the known ELR material. In some
implementations of the invention, this may also be accomplished,
for example, by layering a material over crystalline structure 100
such that atoms of the material span aperture 210 by forming one or
more bonds between first portion 220 and second portion 230 as
would be appreciated. This particular modification of layering a
material over crystalline structure 100 is described in further
detail below in connection with various experimental test
results.
[0084] FIG. 10 illustrates a modified crystalline structure 1010 of
a modified ELR material 1060 as viewed from the second perspective
in accordance with various implementations of the invention. FIG.
11 illustrates modified crystalline structure 1010 of modified ELR
material 1060 as viewed from the first perspective in accordance
with various implementations of the invention. ELR material 360
(e.g., for example, as illustrated in FIG. 3 and elsewhere) is
modified to form modified ELR material 1060. Modifying material
1020 forms bonds with atoms of crystalline structure 300 (of FIG.
3) of ELR material 360 to form modified crystalline structure 1010
of modified ELR material 1060 as illustrated in FIG. 11. As
illustrated, modifying material 1020 bridges a gap between first
portion 320 and second portion 330 thereby changing, among other
things, vibration characteristics of modified crystalline structure
1010, particularly in the region of aperture 310. In doing so,
modifying material 1020 maintains aperture 310 at higher
temperatures. Accordingly, in some implementations of the
invention, modifying material 1020 is specifically selected to fit
in and bond with appropriate atoms in crystalline structure
300.
[0085] In some implementations of the invention and as illustrated
in FIG. 10, modifying material 1020 is bonded to a face of
crystalline structure 300 that is parallel to the b-plane (e.g., an
"a-c" face). In such implementations where modifying material 1020
is bonded to the "a-c" face, apertures 310 extending in the
direction of the a-axis and with cross-sections lying in the
a-plane are maintained. In such implementations, charge carriers
flow through aperture 310 in the direction of the a-axis.
[0086] In some implementations of the invention, modifying material
1020 is bonded to a face of crystalline structure 300 that is
parallel to the a-plane (e.g., a "b-c" face). In such
implementations where modifying material 1020 is bonded to the
"b-c" face, apertures 310 extending in the direction of the b-axis
and with cross-sections lying in the b-plane are maintained. In
such implementations, charge carriers flow through aperture 310 in
the direction of the b-axis.
[0087] Various implementations of the invention include layering a
particular surface of ELR material 360 with modifying material 1020
(i.e., modifying the particular surface of ELR material 360 with
the modifying material 1020). As would be recognized from this
description, reference to "modifying a surface" of ELR material
360, ultimately includes modifying a face (and in some cases more
that one face) of one or more unit cells 400 of ELR material 360.
In other words, modifying material 1020 actually bonds to atoms in
unit cell 400 of ELR material 360.
[0088] For example, modifying a surface of ELR material 360
parallel to the a-plane includes modifying "b-c" faces of unit
cells 400. Likewise, modifying a surface of ELR material 360
parallel to the b-plane includes modifying "a-c" faces of unit
cells 400. In some implementations of the invention, modifying
material 1020 is bonded to a surface of ELR material 360 that is
substantially parallel to any plane that is parallel to the c-axis.
For purposes of this description, planes that are parallel to the
c-axis are referred to generally as ab-planes, and as would be
appreciated, include the a-plane and the b-plane. As would be
appreciated, a surface of ELR material 360 parallel to the ab-plane
is formed from some mixture of "a-c" faces and "b-c" faces of unit
cells 400. In such implementations where modifying material 1020 is
bonded to a surface parallel to an ab-plane, apertures 310
extending in the direction of the a-axis and apertures 310
extending in the direction of the b-axis are maintained.
[0089] In some implementations of the invention, modifying material
1020 may be a conductive material. In some implementations of the
invention, modifying material 1020 may a material with high oxygen
affinity (i.e., a material that bonds easily with oxygen) ("oxygen
bonding material"). In some implementations of the invention,
modifying material 1020 may be a conductive material that bonds
easily with oxygen ("oxygen bonding conductive materials"). Such
oxygen bonding conductive materials may include, but are not
limited to: chromium, copper, bismuth, cobalt, vanadium, and
titanium. Such oxygen bonding conductive materials may also
include, but are not limited to: rhodium or beryllium. Other
modifying materials may include gallium or selenium. Other
modifying materials may include silver. Still other modifying
materials may be used.
[0090] In some implementations of the invention, oxides of
modifying material 1020 may form during various operations
associated with modifying ELR material 360 with modifying material
1020. Accordingly, in some implementations of the invention,
modifying material 1020 may include a substantially pure form of
modifying material 1020 and/or various oxides of modifying material
1020. In other words, in some implementations of the invention, ELR
material 360 is modified with modifying material 1020 and/or
various oxides of modifying material 1020. By way of example, but
not limitation, in some implementations of the invention, modifying
material 1020 may comprise chromium and/or chromium oxide
(Cr.sub.xO.sub.y).
[0091] In some implementations of the invention, ELR material 360
may be YBCO and modifying material 1020 may be an oxygen bonding
conductive material. In some implementations of the invention, ELR
material 360 may be YBCO and modifying material 1020 may be
selected from the group including, but not limited to: chromium,
copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium.
In some implementations of the invention, ELR material 360 may be
YBCO and modifying material 1020 may be selected from the group
consisting of: chromium, copper, bismuth, cobalt, vanadium,
titanium, rhodium, and beryllium. In some implementations of the
invention, ELR material 360 may be YBCO and modifying material 1020
may be another modifying material.
[0092] In some implementations of the invention, various other
combinations of mixed-valence copper-oxide perovskite materials and
oxygen bonding conductive materials may be used. For example, in
some implementations of the invention, ELR material 360 corresponds
to a mixed-valence copper-oxide perovskite material commonly
referred to as "BSCCO." BSCCO includes various atoms of bismuth
("Bi"), strontium ("Sr"), calcium ("Ca"), copper ("Cu") and oxygen
("O"). By itself, BSCCO has a transition temperature of
approximately 100K. In some implementations of the invention, ELR
material 360 may be BSCCO and modifying material 1020 may be an
oxygen bonding conductive material. In some implementations of the
invention, ELR material 360 may be BSCCO and modifying material
1020 may be selected from the group including, but not limited to:
chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or
beryllium. In some implementations of the invention, ELR material
360 may be BSCCO and modifying material 1020 may be selected from
the group consisting of: chromium, copper, bismuth, cobalt,
vanadium, titanium, rhodium, and beryllium. In some implementations
of the invention, ELR material 360 may be BSCCO and modifying
material 1020 may be another modifying material.
[0093] In some implementations of the invention, various
combinations of other ELR materials and modifying materials may be
used. For example, in some implementations of the invention, ELR
material 360 corresponds to an iron pnictide material. Iron
pnictides, by themselves, have transition temperatures that range
from approximately 25-60K. In some implementations of the
invention, ELR material 360 may be an iron pnictide and modifying
material 1020 may be an oxygen bonding conductive material. In some
implementations of the invention, ELR material 360 may be an iron
pnictide and modifying material 1020 may be selected from the group
including, but not limited to: chromium, copper, bismuth, cobalt,
vanadium, titanium, rhodium, or beryllium. In some implementations
of the invention, ELR material 360 may be an iron pnictide and
modifying material 1020 may be selected from the group consisting
of: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium,
and beryllium. In some implementations of the invention, ELR
material 360 may be an iron pnictide and modifying material 1020
may be another modifying material.
[0094] In some implementations of the invention, various
combinations of other ELR materials and modifying materials may be
used. For example, in some implementations of the invention, ELR
material 360 may be magnesium diboride ("MgB.sub.2"). By itself,
magnesium diboride has a transition temperature of approximately
39K. In some implementations of the invention, ELR material 360 may
be magnesium diboride and modifying material 1020 may be an oxygen
bonding conductive material. In some implementations of the
invention, ELR material 360 may be magnesium diboride and modifying
material 1020 may be selected from the group including, but not
limited to: chromium, copper, bismuth, cobalt, vanadium, titanium,
rhodium, or beryllium. In some implementations of the invention,
ELR material 360 may be magnesium diboride and modifying material
1020 may be selected from the group consisting of: chromium,
copper, bismuth, cobalt, vanadium, titanium, rhodium, and
beryllium. In some implementations of the invention, ELR material
360 may be magnesium diboride and modifying material 1020 may be
another modifying material.
[0095] In some implementations of the invention, modifying material
1020 may be layered onto a sample of ELR material 360 using various
techniques for layering one composition onto another composition as
would be appreciated. For example, such layering techniques
include, but are not limited to, pulsed laser deposition,
evaporation including coevaporation, e-beam evaporation and
activated reactive evaporation, sputtering including magnetron
sputtering, ion beam sputtering and ion assisted sputtering,
cathodic arc deposition, CVD, organometallic CVD, plasma enhanced
CVD, molecular beam epitaxy, a sol-gel process, liquid phase
epitaxy and/or other layering techniques. In some implementations
of the invention, ELR material 360 may be layered onto a sample of
modifying material 1020 using various techniques for layering one
composition onto another composition. In some implementations of
the invention, a single atomic layer of modifying material 1020
(i.e., a layer of modifying material 1020 having a thickness
substantially equal to a single atom or molecule of modifying
material 1020) may be layered onto a sample of ELR material 360. In
some implementations of the invention, a single unit layer of the
modifying material (i.e., a layer of the modifying material having
a thickness substantially equal to a single unit (e.g., atom,
molecule, crystal, or other unit) of the modifying material) may be
layered onto a sample of the ELR material. In some implementations
of the invention, the ELR material may be layered onto a single
unit layer of the modifying material. In some implementations of
the invention, two or more unit layers of the modifying material
may be layered onto the ELR material. In some implementations of
the invention, the ELR material may be layered onto two or more
unit layers of the modifying material.
[0096] In some implementations of the invention, modifying ELR
material 360 with modifying material 1020 maintains aperture 310
within modified ELR material 1060 at temperatures at, about, or
above that of the boiling point of nitrogen. In some
implementations of the invention, aperture 310 is maintained at
temperatures at, about, or above that the boiling point of carbon
dioxide. In some implementations of the invention, aperture 310 is
maintained at temperatures at, about, or above that of the boiling
point of ammonia. In some implementations of the invention,
aperture 310 is maintained at temperatures at, about, or above that
of the boiling point of various formulations of Freon. In some
implementations of the invention, aperture 310 is maintained at
temperatures at, about, or above that of the melting point of
water. In some implementations of the invention, aperture 310 is
maintained at temperatures at, about, or above that of the melting
point of a solution of water and antifreeze. In some
implementations of the invention, aperture 310 is maintained at
temperatures at, about, or above that of room temperature (e.g.,
21.degree. C.). In some implementations of the invention, aperture
310 is maintained at temperatures at, about, or above a temperature
selected from one of the following set of temperatures: 150K, 160K,
170K, 180K, 190K, 200K, 210K, 220K, 230K, 240K, 250K, 260K, 270K,
280K, 290K, 300K, 310K. In some implementations of the invention,
aperture 310 is maintained at temperatures within the range of 150K
to 315K.
[0097] FIGS. 14A-14G illustrate test results 1400 obtained as
described above. Test results 1400 include a plot of resistance of
modified ELR material 1060 as a function of temperature (in K).
More particularly, test results 1400 correspond to modified ELR
material 1060 where modifying material 1020 corresponds to chromium
and where ELR material 360 corresponds to YBCO. FIG. 14A includes
test results 1400 over a full range of temperature over which
resistance of modified ELR material 1060 was measured, namely 84K
to 286K. In order to provide further detail, test results 1400 were
broken into various temperature ranges and illustrated. In
particular, FIG. 14B illustrates those test results 1400 within a
temperature range from 240K to 280K; FIG. 14C illustrates those
test results 1400 within a temperature range from 210K to 250K;
FIG. 14D illustrates those test results 1400 within a temperature
range from 180K to 220K; FIG. 14E illustrates those test results
1400 within a temperature range from 150K to 190K; FIG. 14F
illustrates those test results 1400 within a temperature range from
120K to 160K; and FIG. 14G illustrates those test results 1400
within a temperature range from 84.5K to 124.5K.
[0098] Test results 1400 demonstrate that various portions of
modified ELR material 1060 operate in an ELR state at higher
temperatures relative to ELR material 360. Six sample analysis test
runs were made. For each sample analysis test run, modified ELR
material 1060 was slowly cooled from approximately 286K to 83K.
While being cooled, the current source applied +60 nA and -60 nA of
current in a delta mode configuration in order to reduce impact of
any DC offsets and/or thermocouple effects. At regular time
intervals, the voltage across modified ELR material 1060 was
measured by the voltmeter. For each sample analysis test run, the
time series of voltage measurements were filtered using a 512-point
fast Fourier transform ("FFT"). All but the lowest 44 frequencies
from the FFT were eliminated from the data and the filtered data
was returned to the time domain. The filtered data from each sample
analysis test run were then merged together to produce test results
1400. More particularly, all the resistance measurements from the
six sample analysis test runs were organized into a series of
temperature ranges (e.g., 80K-80.25K, 80.25K to 80.50, 80.5K to
80.75K, etc.) in a manner referred to as "binning." Then the
resistance measurements in each temperature range were averaged
together to provide an average resistance measurement for each
temperature range. These average resistance measurements form test
results 1400.
[0099] Test results 1400 include various discrete steps 1410 in the
resistance versus temperature plot, each of such discrete steps
1410 representing a relatively rapid change in resistance over a
relatively narrow range of temperatures. At each of these discrete
steps 1410, discrete portions of modified ELR material 1060 begin
propagating electrical charge up to such portions' charge
propagating capacity at the respective temperatures. At very small
scales, the surface of ELR material 360 being modified is not
perfectly smooth, and thus apertures 310 exposed within the surface
of ELR material 360 typically do not extend across the entire width
or length of the sample of modified ELR material 1060. Accordingly,
in some implementations of the invention, modifying material 1020
covers an entire surface of ELR material 360 and may act as a
conductor that carries electrical charge between apertures 310.
[0100] Before discussing test results 1400 in further detail,
various characteristics of ELR material 360 and modifying material
1020 are discussed. Resistance versus temperature ("R-T") profiles
of these materials individually are generally well known. The
individual R-T profiles of these materials are not believed to
include features similar to discrete steps 1410 found in test
results 1400. In fact, unmodified samples of ELR material 360 and
samples of modifying material 1020 alone have been tested under
similar and often identical testing and measurement configurations.
In each instance, the R-T profile of the unmodified samples of ELR
material 360 and the R-T profile of the modifying material alone
did not include any features similar to discrete steps 1410.
Accordingly, discrete steps 1410 are the result of modifying ELR
material 360 with modifying material 1020 to maintain aperture 310
at increased temperatures thereby allowing modified material 1060
to remain in an ELR state at such increased temperatures in
accordance with various implementations of the invention.
[0101] At each of discrete steps 1410, various ones of apertures
310 within modified ELR material 1060 start propagating electrical
charge up to each aperture's 310 charge propagating capacity. As
measured by the voltmeter, each charge propagating aperture 310
appears as a short-circuit, dropping the apparent voltage across
the sample of modified ELR material 1060 by a small amount. The
apparent voltage continues to drop as additional ones of apertures
310 start propagating electrical charge until the temperature of
the sample of modified ELR material 1060 reaches the transition
temperature of ELR material 360 (i.e., the transition temperature
of the unmodified ELR material which in the case of YBCO is
approximately 90K).
[0102] Test results 1400 indicate that certain apertures 310 within
modified ELR material 1060 propagate electrical charge at
approximately 97K, 100K, 103K, 113K, 126K, 140K, 146K, 179K,
183.5K, 200.5K, 237.5K, and 250K. Certain apertures 310 within
modified ELR material 1060 may propagate electrical charge at other
temperatures within the full temperature range as would be
appreciated.
[0103] Test results 1400 include various other relatively rapid
changes in resistance over a relatively narrow range of
temperatures not otherwise identified as a discrete step 1410. Some
of these other changes may correspond to artifacts from data
processing techniques used on the measurements obtained during the
test runs (e.g., FFTs, filtering, etc.). Some of these other
changes may correspond to changes in resistance due to resonant
frequencies in modified crystalline structure 1010 affecting
aperture 310 at various temperatures. Some of these other changes
may correspond to additional discrete steps 1410. In addition,
changes in resistance in the temperature range of 270-274K are
likely to be associated with water present in modified ELR material
1060, some of which may have been introduced during preparation of
the sample of modified ELR material 1060.
[0104] In addition to discrete steps 1410, test results 1400 differ
from the R-T profile of ELR material 360 in that modifying material
1020 conducts well at temperatures above the transition temperature
of ELR material 360 whereas ELR material 360 typically does
not.
[0105] FIG. 15 illustrates additional test results 1500 for samples
of ELR material 360 and modifying material 1020. More particularly,
for test results 1500, modifying material 1020 corresponds to
chromium and ELR material 360 corresponds to YBCO. For test results
1500, samples of ELR material 360 were prepared, using various
techniques discussed above, to expose a face of crystalline
structure 300 parallel to the a-plane or the b-plane. Test results
1500 were gathered using a lock-in amplifier and a K6221 current
source, which applied a 10nA current at 24.0, Hz to modified ELR
material 1060. Test results 1500 include a plot of resistance of
modified ELR material 1060 as a function of temperature (in K).
FIG. 15 includes test results 1500 over a full range of temperature
over which resistance of modified ELR material 1060 was measured,
namely 80K to 275K. Test results 1500 demonstrate that various
portions of modified ELR material 1060 operate in an ELR state at
higher temperatures relative to ELR material 360. Five sample
analysis test runs were made with a sample of modified ELR material
1060. For each sample analysis test run, the sample of modified ELR
material 1060 was slowly warmed from 80K to 275K. While being
warmed, the voltage across the sample of modified ELR material 1060
was measured at regular time intervals and the resistance was
calculated based on the source current. For each sample analysis
test run, the time series of resistance measurements were filtered
using a 1024-point FFT. All but the lowest 15 frequencies from the
FFT were eliminated from the data and the filtered resistance
measurements were returned to the time domain. The filtered
resistance measurements from each sample analysis test run were
then merged together using the binning process referred to above to
produce test results 1500. Then the resistance measurements in each
temperature range were averaged together to provide an average
resistance measurement for each temperature range. These average
resistance measurements form test results 1500.
[0106] Test results 1500 include various discrete steps 1510 in the
resistance versus temperature plot, each of such discrete steps
1510 representing a relatively rapid change in resistance over a
relatively narrow range of temperatures, similar to discrete steps
1410 discussed above with respect to FIGS. 14A-14G. At each of
these discrete steps 1510, discrete portions of modified ELR
material 1060 propagate electrical charge up to such portions'
charge propagating capacity at the respective temperatures.
[0107] Test results 1500 indicate that certain apertures 310 within
modified ELR material 1060 propagate electrical charge at
approximately 120K, 145K, 175K, 225K, and 250K. Certain apertures
310 within modified ELR material 1060 may propagate electrical
charge at other temperatures within the full temperature range as
would be appreciated.
[0108] FIGS. 16-20 illustrate additional test results for samples
of ELR material 360 and various modifying materials 1020. For these
additional test results, samples of ELR material 360 were prepared,
using various techniques discussed above, to expose a face of
crystalline structure 300 substantially parallel to the a-plane or
the b-plane or some combination of the a-plane or the b-plane and
the modifying material was layered onto these exposed faces. Each
of these modified samples was slowly cooled from approximately 300K
to 80K. While being warmed, a current source applied a current in a
delta mode configuration through the modified sample as described
below. At regular time intervals, the voltage across the modified
sample was measured. For each sample analysis test run, the time
series of voltage measurements were filtered in the frequency
domain using an FFT by removing all but the lowest frequencies, and
the filtered measurements were returned to the time domain. The
number of frequencies kept is in general different for each data
set. The filtered data from each of test runs were then binned and
averaged together to produce the test results illustrated in FIGS.
16-21.
[0109] FIG. 16 illustrates test results 1600 including a plot of
resistance of modified ELR material 1060 as a function of
temperature (in K). For test results 1600, modifying material 1020
corresponds to vanadium and ELR material 360 corresponds to YBCO.
Test results 1600 were produced over 11 test runs using a 20nA
current source, a 1024-point FFT was performed, and information
from all but the lowest 12 frequencies were eliminated. Test
results 1600 demonstrate that various portions of modified ELR
material 1060 operate in an ELR state at higher temperatures
relative to ELR material 360. Test results 1600 include various
discrete steps 1610 in the resistance versus temperature plot,
similar to those discussed above with regard to FIGS. 14A-14G. Test
results 1600 indicate that certain apertures 310 within modified
ELR material 1060 propagate electrical charge at approximately
267K, 257K, 243K, 232K, and 219K. Certain apertures 310 within
modified ELR material 1060 may propagate electrical charge at other
temperatures.
[0110] FIG. 17 illustrates test results 1700 including a plot of
resistance of modified ELR material 1060 as a function of
temperature (in K). For test results 1700, modifying material 1020
corresponds to bismuth and ELR material 360 corresponds to YBCO.
Test results 1700 were produced over 5 test runs using a 400nA
current source, a 1024-point FFT was performed, and information
from all but the lowest 12 frequencies were eliminated. Test
results 1700 demonstrate that various portions of modified ELR
material 1060 operate in an ELR state at higher temperatures
relative to ELR material 360. Test results 1700 include various
discrete steps 1710 in the resistance versus temperature plot,
similar to those discussed above with regard to FIGS. 14A-14G. Test
results 1700 indicate that certain apertures 310 within modified
ELR material 1060 propagate electrical charge at approximately
262K, 235K, 200K, 172K, and 141K. Certain apertures 310 within
modified ELR material 1060 may propagate electrical charge at other
temperatures.
[0111] FIG. 18 illustrates test results 1800 including a plot of
resistance of modified ELR material 1060 as a function of
temperature (in K). For test results 1800, modifying material 1020
corresponds to copper and ELR material 360 corresponds to YBCO.
Test results 1800 were produced over 6 test runs using a 200nA
current source, a 1024-point FFT was performed, and information
from all but the lowest 12 frequencies were eliminated. Test
results 1800 demonstrate that various portions of modified ELR
material 1060 operate in an ELR state at higher temperatures
relative to ELR material 360. Test results 1800 include various
discrete steps 1810 in the resistance versus temperature plot,
similar to those discussed above with regard to FIGS. 14A-14G. Test
results 1800 indicate that certain apertures 310 within modified
ELR material 1060 propagate electrical charge at approximately
268K, 256K, 247K, 235K, and 223K. Certain apertures 310 within
modified ELR material 1060 may propagate electrical charge at other
temperatures.
[0112] FIG. 19 illustrates test results 1900 including a plot of
resistance of modified ELR material 1060 as a function of
temperature (in K). For test results 1900, modifying material 1020
corresponds to cobalt and ELR material 360 corresponds to YBCO.
Test results 1900 were produced over 11 test runs using a 400nA
current source, a 1024-point FFT was performed, and information
from all but the lowest 12 frequencies were eliminated. Test
results 1900 demonstrate that various portions of modified ELR
material 1060 operate in an ELR state at higher temperatures
relative to ELR material 360. Test results 1900 include various
discrete steps 1910 in the resistance versus temperature plot,
similar to those discussed above with regard to FIGS. 14A-14G. Test
results 1900 indicate that certain apertures 310 within modified
ELR material 1060 propagate electrical charge at approximately
265K, 236K, 205K, 174K, and 143K. Certain apertures 310 within
modified ELR material 1060 may propagate electrical charge at other
temperatures.
[0113] FIG. 20 illustrates test results 2000 including a plot of
resistance of modified ELR material 1060 as a function of
temperature (in K). For test results 2000, modifying material 1020
corresponds to titanium and ELR material 360 corresponds to YBCO.
Test results 2000 were produced over 25 test runs using a 100nA
current source, a 512-point FFT was performed, and information from
all but the lowest 11 frequencies were eliminated. Test results
2000 demonstrate that various portions of modified ELR material
1060 operate in an ELR state at higher temperatures relative to ELR
material 360. Test results 2000 include various discrete steps 2010
in the resistance versus temperature plot, similar to those
discussed above with regard to FIGS. 14A-14G. Test results 2000
indicate that certain apertures 310 within modified ELR material
1060 propagate electrical charge at approximately 266K, 242K, and
217K. Certain apertures 310 within modified ELR material 1060 may
propagate electrical charge at other temperatures.
[0114] FIG. 21A-21B illustrates test results 2100 including a plot
of resistance of modified ELR material 1060 as a function of
temperature (in K). For test results 2100, modifying material 1020
corresponds to chromium and ELR material 360 corresponds to BSSCO.
FIG. 21A includes test results 2100 over a full range of
temperature over which resistance of modified ELR material 1060 was
measured, namely 80K to 270K. In order to provide further detail,
test results 2100 were expanded over a temperature range of
150K-250K as illustrated in FIG. 21B. Test results 2100 were
gathered in a manner similar to those discussed above with regard
to FIG. 16-20. In particular, test results 2100 were produced over
25 test runs using a 300nA current source. The data from these test
runs was Savitzy-Golay smoothed, using 64 side points and 4.sup.th
order polynomials. Test results 2100 demonstrate that various
portions of modified ELR material 1060 operate in an ELR state at
higher temperatures relative to ELR material 360 (here, BSSCO).
Test results 2100 include various discrete steps 2110 in the
resistance versus temperature plot, similar to those discussed
above with regard to FIGS. 14A-14G. Test results 2100 indicate that
certain apertures within modified ELR material 1060 propagate
electrical charge at approximately 184K and 214K. Certain apertures
310 within modified ELR material 1060 may propagate electrical
charge at other temperatures.
[0115] In other experiments, modifying material 1020 was layered
onto a surface of ELR material 360 substantially parallel to the
c-plane of crystalline structure 300. These tests results (not
otherwise illustrated) demonstrate that layering a surface of ELR
material 360 parallel to the c-plane with modifying material 1020
did not produce any discrete steps such as those described above
(e.g., discrete steps 1410). These test results indicate that
modifying a surface of ELR material 360 that is perpendicular to a
direction in which ELR material 360 does not (or tends to not)
exhibit the resistance phenomenon does not improve the operating
characteristics of the unmodified ELR material. In other words,
modifying such surfaces of ELR material 360 may not maintain
aperture 310. In accordance with various principles of the
invention, modifying material should be layered with surfaces of
the ELR material that are parallel to the direction in which ELR
material does not (or tends to not) exhibit the resistance
phenomenon. More particularly, and for example, with regard to ELR
material 360 (illustrated in FIG. 3), modifying material 1020
should be bonded to an "a-c" face or a "b-c" face of crystalline
structure 300 (both of which faces are parallel to the c-axis) in
ELR material 360 (which tends not to exhibit the resistance
phenomenon in the direction of the c-axis) in order to maintain
aperture 310.
[0116] FIG. 22 illustrates an arrangement 2200 including
alternating layers of ELR material 360 and a modifying material
1020 useful for propagating additional electrical charge according
to various implementations of the invention. Such layers may be
deposited onto one another using various deposition techniques.
Various techniques may be used to improve alignment of crystalline
structures 300 within layers of ELR material 360. Improved
alignment of crystalline structures 300 may result in apertures 310
of increased length through crystalline structure 300 which in turn
may provide for operation at higher temperatures and/or with
increased charge propagating capacity. Arrangement 2200 provides
increased numbers of apertures 310 within modified ELR material
1060 at each interface between adjacent layers of modifying
material 1020 and ELR material 360. Increased numbers of apertures
310 may increase a charge propagating capacity of arrangement
2200.
[0117] In some implementations of the invention, any number of
layers may be used. In some implementations of the invention, other
ELR materials and/or other modifying materials may be used. In some
implementations of the invention, additional layers of other
material (e.g., insulators, conductors, or other materials) may be
used between paired layers of ELR material 360 and modifying
material 1020 to mitigate various effects (e.g., magnetic effects,
migration of materials, or other effects) or to enhance the
characteristics of the modified ELR material 1060 formed within
such paired layers. In some implementations of the invention, not
all layers are paired. In other words, arrangement 2200 may have
one or more extra (i.e., unpaired) layers of ELR material 360 or
one or more extra layers of modifying material 1020.
[0118] FIG. 23 illustrates additional layers 2310 (illustrated as a
layer 2310A, a layer 2310B, a layer 2310C, and a layer 2310D) of
modified crystalline structure 1010 in modified ELR material 1060
according to various implementations of the invention. As
illustrated, modified ELR material 1060 includes various apertures
310 (illustrated as an aperture 310A, an aperture 310B, and an
aperture 310C) at different distances into material 1060 from
modifying material 1020 that form bonds with atoms of crystalline
structure 300 (of FIG. 3). Aperture 310A is nearest modifying
material 1020, followed by aperture 310B, which in turn is followed
by aperture 310C, etc. In accordance with various implementations
of the invention, an impact of modifying material 1020 is greatest
with respect to aperture 310A, followed by a lesser impact with
respect to aperture 310B, which in turn is followed by a lesser
impact with respect to aperture 310C, etc. According to some
implementations of the invention, modifying material 1020 should
better maintain aperture 310A than either aperture 310B or aperture
310C due to aperture 310A's proximity to modifying material 1020;
likewise, modifying material 1020 should better maintain aperture
310B than aperture 310C due to aperture 310B's proximity to
modifying material 1020, etc. According to some implementations of
the invention, modifying material 1020 should better maintain the
cross-section of aperture 310A than the cross-sections of either
aperture 310B or aperture 310C due to aperture 310A's proximity to
modifying material 1020; likewise, modifying material 1020 should
better maintain the cross-section of aperture 310B than the
cross-section of aperture 310C due to aperture 310B's proximity to
modifying material 1020, etc. According to some implementations of
the invention, modifying material 1020 should have a greater impact
on a charge propagating capacity of aperture 310A at a particular
temperature than on a charge propagating capacity of either
aperture 310B or aperture 310C at that particular temperature due
to aperture 310A's proximity to modifying material 1020; likewise,
modifying material 1020 should have a greater impact on the charge
propagating capacity of aperture 310B at a particular temperature
than on the charge propagating capacity of aperture 310C at that
particular temperature due to aperture 310B's proximity to
modifying material 1020, etc. According to some implementations of
the invention, modifying material 1020 should enhance the
propagation of electrical charge through aperture 310A more than
the propagation of electrical charge through either aperture 310B
or aperture 310C due to aperture 310A's proximity to modifying
material 1020; likewise, modifying material 1020 should enhance the
propagation of electrical charge through aperture 310B more than
the propagation of electrical charge through aperture 310C due to
aperture 310B's proximity to modifying material 1020, etc.
[0119] Various test results described above, for example, test
results 1400 of FIG. 14, among others, support these aspects of
various implementations of the invention, i.e., generally, that the
impact of modifying material 1020 on apertures 310 varies in
relation to their proximity to one another. In particular, each
discrete step 1410 in test results 1400 may correspond to a change
in electrical charge carried by modified ELR material 1060 as those
apertures 310 in a particular layer 2310 (or more appropriately,
those apertures 310 formed between adjacent layers 2310 as
illustrated) propagate electrical charge up to such apertures' 310
charge propagating capacity. Those apertures 310 in layers 2310
closer in proximity to modifying material 1020 correspond to
discrete steps 1410 at higher temperatures whereas those apertures
310 in layers 2310 further from modifying material 1020 correspond
to discrete steps 1410 at lower temperatures. Discrete steps 1410
are "discrete" in the sense that apertures 310 at a given relative
distance to modifying material 1020 (i.e., apertures 310A between
layers 2310A and 2310B) propagate electrical charge at a particular
temperature and quickly reach their maximum charge propagating
capacity. Another discrete step 1410 is reached when apertures 310
at an increased distance from modifying material 1020 (i.e.,
apertures 310B between layers 2310B and 2310C) propagate electrical
charge at a lower temperature as a result of the increased distance
and hence the lessened impact of modifying material 1020 on those
apertures 310. Each discrete step 1410 corresponds to another set
of apertures 310 beginning to carry electrical charge based on
their distance from modifying material 1020. At some distance,
however, modifying material 1020 may have insufficient impact on
some apertures 310 to cause them to carry electrical charge at a
higher temperature than they otherwise would; hence, such apertures
310 propagate electrical charge at a temperature consistent with
that of ELR material 360.
[0120] In some implementations of the invention, a distance between
modifying material 1020 and apertures 310 is reduced so as to
increase impact of modifying material 1020 on more apertures 310.
In effect, more apertures 310 should propagate electrical charge at
discrete steps 1410 associated with higher temperatures. For
example, in arrangement 2200 of FIG. 22 and in accordance with
various implementations of the invention, layers of ELR material
360 may be made to be only a few unit cells thick in order to
reduce the distance between apertures 310 in ELR material 360 and
modifying material 1020. Reducing this distance should increase the
number of apertures 310 impacted by modifying material 1020 at a
given temperature. Reducing this distance also increases the number
of alternating layers of ELR material 360 in a given overall
thickness of arrangement 2200 thereby increasing an overall charge
propagating capacity of arrangement 2200.
[0121] FIG. 24 illustrates a film 2400 of an ELR material 2410
formed on a substrate 2420, although, substrate 2420 may not be
necessary in various implementations of the invention. In various
implementations of the invention, film 2400 may be formed into a
tape having a length, for example, greater than 10 cm, 1 m, 1 km or
more. Such tapes may be useful, for example, as ELR conductors or
ELR wires. As would be appreciated, while various implementations
of the invention are described in reference to ELR films, such
implementations apply to ELR tapes as well.
[0122] For purposes of this description and as illustrated in FIG.
24, film 2400 has a primary surface 2430 and a principal axis 2440.
Principal axis 2440 corresponds to a axis extending along a length
of film 2400 (as opposed to a width of film 2400 or a thickness of
film 2400). Principal axis 2440 corresponds to a primary direction
in which electrical charge flows through film 2400. Primary surface
2430 corresponds to the predominant surface of film 2400 as
illustrated in FIG. 24, and corresponds to the surface bound by the
width and the length of film 2400. It should be appreciated that
films 2400 may have various lengths, widths, and/or thicknesses
without departing from the scope of the invention.
[0123] In some implementations of the invention, during the
fabrication of film 2400, the crystalline structures of ELR
material 2410 may be oriented such that their c-axis is
substantially perpendicular to primary surface 2430 of film 2400
and either the a-axis or the b-axis of their respective crystalline
structures is substantially parallel to principal axis 2440. Hence,
as illustrated in FIG. 24, the c-axis is referenced by name and the
a-axis and the b-axis are not specifically labeled, reflecting
their interchangeability for purposes of describing various
implementations of the invention. In some fabrication processes of
film 2400, the crystalline structures of ELR material may be
oriented such that any given line within the c-plane may be
substantially parallel with principal axis 2440.
[0124] For purposes of this description, films 2400 having the
c-axis of their respective crystalline structures oriented
substantially perpendicular to primary surface 2430 (including film
2400 depicted in FIG. 24) are referred to as "c-films" (i.e.,
c-film 2400). C-film 2400, with ELR material 2410 comprised of
YBCO, is commercially available from, for example, American
Superconductors.TM. (e.g., 344 Superconductor--Type 348C) or Theva
Dunnschichttechnik GmbH (e.g., HTS coated conductors).
[0125] In some implementations of the invention, substrate 2420 may
include a substrate material including, but not limited to, MgO,
STO, LSGO, a polycrystalline material such as a metal or a ceramic,
an inert oxide material, a cubic oxide material, a rare earth oxide
material, or other substrate material as would be appreciated.
[0126] According to various implementations of the invention (and
as described in further detail below), a modifying material 1020 is
layered onto an appropriate surface of ELR material 2410, where the
appropriate surface of ELR material 2410 corresponds to any surface
not substantially perpendicular to the c-axis of the crystalline
structure of ELR material 2410. In other words, the appropriate
surface of ELR material 2410 may correspond to any surface that is
not substantially parallel to the primary surface 2430. In some
implementations of the invention, the appropriate surface of ELR
material 2410 may correspond to any surface that is substantially
parallel to the c-axis of the crystalline structure of ELR material
2410. In some implementations of the invention, the appropriate
surface of ELR material 2410 may correspond to any surface that is
not substantially perpendicular to the c-axis of the crystalline
structure of ELR material 2410. In order to modify an appropriate
surface of c-film 2400 (whose primary surface 2430 is substantially
perpendicular to the c-axis of the crystalline structure of ELR
material 2410), the appropriate surface of ELR material 2410 may be
formed on or within c-film 2400. In some implementations of the
invention, primary surface 2430 may be processed to expose
appropriate surface(s) of ELR material 2410 on or within c-film
2400 on which to layer modifying material. In some implementations
of the invention, primary surface 2430 may be processed to expose
one or more apertures 210 of ELR material 2410 on or within c-film
2400 on which to layer modifying material. It should be
appreciated, that in various implementations of the invention,
modifying material may be layered onto primary surface 2430 in
addition to the appropriate surfaces referenced above.
[0127] Processing of primary surface 2430 of c-film 2400 to expose
appropriate surfaces and/or apertures 210 of ELR material 2410 may
comprise various patterning techniques, including various wet
processes or dry processes. Various wet processes may include
lift-off, chemical etching, or other processes, any of which may
involve the use of chemicals and which may expose various other
surfaces within c-film 2400. Various dry processes may include ion
or electron bream irradiation, laser direct-writing, laser ablation
or laser reactive patterning or other processes which may expose
various appropriate surfaces and/or apertures 210 of ELR material
2410 within c-film 2400.
[0128] As illustrated in FIG. 25, primary surface 2430 of c-film
2400 may be processed to expose an appropriate surface within
c-film 2400. For example, c-film 2400 may be processed to expose a
face within c-film 2400 substantially parallel to the b-plane of
crystalline structure 100 or a face within c-film 2400
substantially parallel to the a-plane of crystalline structure 100.
More generally, in some implementations of the invention, primary
surface 2430 of c-film 2400 may be processed to expose an
appropriate surface within c-film 2400 corresponding to an a/b-c
face (i.e., a face substantially parallel to ab-plane). In some
implementations of the invention, primary surface 2430 of c-film
may be processed to expose any face within c-film 2400 that is not
substantially parallel with primary surface 2430. In some
implementations of the invention, primary surface 2430 of c-film
may be processed to expose any face within c-film 2400 that is not
substantially parallel with primary surface 2430 and also
substantially parallel with principal axis 2440. Any of these
faces, including combinations of these faces, may correspond to
appropriate surfaces of ELR material 2410 on or within c-film 2400.
According to various implementations of the invention, appropriate
surfaces of ELR material 2410 provide access to or otherwise
"expose" apertures 210 in ELR material 2410 for purposes of
maintaining such apertures 210.
[0129] In some implementations of the invention, as illustrated in
FIG. 25, primary surface 2430 is processed to form one or more
grooves 2510 in primary surface 2430. Grooves 2510 include one or
more appropriate surfaces (i.e., surfaces other than one
substantially parallel to primary surface 2430) on which to deposit
modifying material. While grooves 2510 are illustrated in FIG. 25
as having a cross section substantially rectangular in shape, other
shapes of cross sections may be used as would be appreciated. In
some implementations of the invention, the width of grooves 2510
may be greater than 10 nm. In some implementations of the invention
and as illustrated in FIG. 25, the depth of grooves 2510 may be
less than a full thickness of ELR material 2410 of c-film 2400. In
some implementations of the invention and as illustrated in FIG.
26, the depth of grooves 2510 may be substantially equal to the
thickness of ELR material 2410 of c-film 2400. In some
implementations of the invention, the depth of grooves 2510 may
extend through ELR material 2410 of c-film 2400 and into substrate
2420 (not otherwise illustrated). In some implementations of the
invention, the depth of grooves 2510 may correspond to a thickness
of one or more units of ELR material 2410 (not otherwise
illustrated). Grooves 2510 may be formed in primary surface 2430
using various techniques, such as, but not limited to, laser
etching, or other techniques.
[0130] In some implementations of the invention, the length of
grooves 2510 may correspond to the full length of c-film 2400. In
some implementations of the inventions, grooves 2510 are
substantially parallel to one another and to principal axis 2440.
In some implementations of the invention, grooves 2510 may take on
various configurations and/or arrangements in accordance with the
various aspects of the invention. For example, grooves 2510 may
extend in any manner and/or direction and may include lines, curves
and/or other geometric shapes in cross-section with varying sizes
and/or shapes along its extent.
[0131] While various aspects of the invention are described as
forming grooves 2510 within primary surface 2430, it will be
appreciated that bumps, angles, or protrusions that include
appropriate surfaces of ELR material 2410 may be formed on
substrate 2420 to accomplish similar geometries.
[0132] According to various implementations of the invention,
c-film 2400 may be modified to form various modified c-films. For
example, referring to FIG. 27, a modifying material 2720 (i.e.,
modifying material 1020, modifying material 1020) may be layered
onto primary surface 2430 and into grooves 2510 formed within
primary surface 2430 of an unmodified c-film (e.g., c-film 2400)
and therefore onto various appropriate surfaces 2710 to form a
modified c-film 2700. Appropriate surfaces 2710 may include any
appropriate surfaces discussed above. While appropriate surfaces
2710 are illustrated in FIG. 27 as being perpendicular to primary
surface 2430, this is not necessary as would be appreciated from
this description.
[0133] In some implementations of the invention, modifying material
2720 may be layered onto primary surface 2430 and into grooves 2510
as illustrated in FIG. 27. In some implementations, such as
illustrated in FIG. 28, modifying material 2720 may be removed from
primary surface 2430 to form modified c-film 2800 using various
techniques such that modifying material 2720 remains only in
grooves 2510 (e.g., various polishing techniques). In some
implementations, modified c-film 2800 may be accomplished by
layering modifying material 2720 only in grooves 2510. In other
words, in some implementations, modifying material 2720 may be
layered only into grooves 2510 and/or onto appropriate surfaces
2710, without layering modifying material 2720 onto primary surface
2430 or may be layered such that modifying material 2720 does not
bond or otherwise adhere to primary surface 2430 (e.g., using
various masking techniques). In some implementations of the
invention, various selective deposition techniques may be employed
to layer modifying material 2720 directly onto appropriate surfaces
2710.
[0134] The thickness of modifying material 2720 in grooves 2510
and/or on primary surface 2430 may vary according to various
implementations of the invention. In some implementations of the
invention, a single unit layer of modifying material 2720 (i.e., a
layer having a thickness substantially equal to a single unit of
modifying material 2720) may be layered onto appropriate surfaces
2710 of grooves 2510 and/or on primary surface 2430. In some
implementations of the invention, two or more unit layers of
modifying material 2720 may be layered into onto appropriate
surfaces 2710 of grooves 2510 and/or on primary surface 2430.
[0135] Modified c-films 2700, 2800 (i.e., c-film 2400 modified with
modifying material 2720) in accordance with various implementations
of the invention may be useful for achieving one or more improved
operational characteristics over those of unmodified c-film
2400.
[0136] As illustrated in FIG. 29, in some implementations of the
invention, primary surface 2430 of unmodified c-film 2400 may be
modified, via a chemical etch, to expose or otherwise increase an
area of appropriate surfaces 2710 available on primary surface
2430. In some implementations of the invention, one manner of
characterizing an increased area of appropriate surfaces 2710
within primary surface 2430 may be based on the root mean square
(RMS) surface roughness of primary surface 2430 of c-film 2400. In
some implementations of the invention, as a result of chemical
etching, primary surface 2430 of c-film 2400 may include an etched
surface 2910 having a surface roughness in a range of about 1 nm to
about 50 nm. RMS surface roughness may be determined using, for
example, Atomic Force Microscopy (AFM), Scanning Tunneling
Microscopy.sup.SM, or SEM and may be based on a statistical mean of
an R-range, wherein the R-range may be a range of the radius (r) of
a grain size as would be appreciated. After the chemical etch, an
etched surface 2910 of c-film 2900 may correspond to appropriate
surface 2710 of ELR material 2410.
[0137] As illustrated in FIG. 30, after the chemical etch,
modifying material 2720 may be layered on to etched surface 2910 of
c-film 2900 to form a modified c-film 3000. Modifying material 2720
may cover substantially all of surface 2910 and the thickness of
modifying material 2720 may vary in accordance with various
implementations of the invention. In some implementations of the
invention, a single unit layer of modifying material 2720 may be
layered onto etched surface 2910. In some implementations of the
invention, two or more unit layers of modifying material 2720 may
be layered onto etched surface 2910.
[0138] In some implementations of the invention, films having
orientations of crystalline structure of ELR material other than
that of c-film 2400 may be used. For example, in reference to FIG.
31, and according to various implementations of the invention,
instead of the c-axis oriented perpendicular to primary surface
2430 as with c-film 2400, a film 3100 may have the c-axis oriented
perpendicular to the principal axis 2440 and a b-axis of ELR
material 3110 oriented perpendicular to primary surface 2430.
Similarly, a film 3100 may have the c-axis oriented perpendicular
to the principal axis 2440 and an a-axis of ELR material 3110
oriented perpendicular to primary surface 2430. In some
implementations of the invention, film 3100 may have the c-axis
oriented perpendicular to the principal axis 2440 and any line
parallel to the c-plane oriented along principal axis 2440. As
illustrated in FIG. 31, in these implementations of the invention,
film 3100 includes ELR material 3110 with the c-axis of its
crystalline structure oriented perpendicular to principal axis 2440
and parallel to a primary surface 3130 and are generally referred
to herein as a-b films 3100. While FIG. 31 illustrates the other
two axes of the crystalline structure in a particular orientation,
such orientation is not necessary as would be appreciated. As
illustrated, a-b films 3100 may include an optional substrate 2420
(as with c-films 2400).
[0139] In some implementations of the invention, a-b film 3100 is
an a-film, having the c-axis of the crystalline structure of ELR
material 3110 oriented as illustrated in FIG. 31 and the a-axis
perpendicular to primary surface 3130. Such a-films may be formed
via various techniques including those described at Selvamanickam,
V., et al., "High Current Y--Ba--Cu--O Coated Conductor using Metal
Organic Chemical Vapor Deposition and Ion Beam Assisted
Deposition," Proceedings of the 2000 Applied Superconductivity
Conference, Virginia Beach, Va., Sep. 17-22, 2000, which is
incorporated herein by reference in its entirety. In some
implementations, a-films may be grown on substrates 2420 formed of
the following materials: LGSO, LaSrAlO.sub.4, NdCaAIO.sub.4,
Nd.sub.2CuO.sub.4, or CaNdAlO.sub.4. Other substrate materials may
be used as would be appreciated.
[0140] In some implementations of the invention, a-b film 3100 is a
b-film, having the c-axis of the crystalline structure of ELR
material 3110 oriented as illustrated in FIG. 31 and the b-axis
perpendicular to primary surface 3130.
[0141] According to various implementations of the invention,
primary surface 3130 of a-b film 3100 corresponds to an appropriate
surface 2710. In some implementations that employ a-b film 3100,
forming an appropriate surface of ELR material 3110 may include
forming a-b film 3100. Accordingly, for implementations of the
invention that include a-b film 3100, modifying material 2720 may
be layered onto primary surface 3130 of a-b film 3100 to create a
modified a-b film 3200 as illustrated in FIG. 32. In some
implementations of the invention, modifying material 2720 may cover
primary surface 3130 of a-b film 3100 in whole or in part. In some
implementations of the invention, the thickness of modifying
material 2720 may vary as discussed above. More particularly, in
some implementations of the invention, a single unit layer of
modifying material 2720 may be layered onto primary surface 3130 of
a-b film 3100; and in some implementations of the invention, two or
more unit layers of modifying material 2720 may be layered onto
primary surface 3130 of a-b film 3100. In some implementations of
the invention, a-b film 3100 may be grooved or otherwise modified
as discussed above with regard to c-film 2400, for example, to
increase an overall area of appropriate surfaces 2710 of ELR
material 3110 on which to layer modifying material 2720.
[0142] As would be appreciated, rather than utilizing a-b film
3100, some implementations of the invention may utilize a layer of
ELR material 2410 having its crystalline structure oriented in a
manner similar to that of a-b film 3100.
[0143] In some implementations of the invention (not otherwise
illustrated) a buffer or insulating material may be subsequently
layered onto modifying material 2720 of any of the aforementioned
films. In these implementations, the buffer or insulating material
and the substrate form a "sandwich" with ELR material 2410, 3110
and modifying material 2720 there between. The buffer or insulating
material may be layered onto modifying material 2720 as would be
appreciated.
[0144] Any of the aforementioned materials may be layered onto any
other material. For example, ELR materials may be layered onto
modifying materials. Likewise, modifying materials may be layered
onto ELR materials. Further, layering may include combining,
forming, or depositing one material onto the other material as
would be appreciated. Layering may use any generally known layering
technique, including, but not limited to, pulsed laser deposition,
evaporation including coevaporation, e-beam evaporation and
activated reactive evaporation, sputtering including magnetron
sputtering, ion beam sputtering and ion assisted sputtering,
cathodic arc deposition, CVD, organometallic CVD, plasma enhanced
CVD, molecular beam epitaxy, a sol-gel process, liquid phase
epitaxy and/or other layering technique.
[0145] Multiple layers of ELR material 2410, 3110, modifying
material 2720, buffer or insulating layers, and/or substrates 1120
may be arranged in various implementations of the invention. FIG.
33 illustrates various exemplary arrangements of these layers in
accordance with various implementations of the invention. In some
implementations, a given layer may comprise a modifying material
2720 that also acts as a buffer or insulating layer or a substrate.
Other arrangements or combinations of arrangements may be used as
would be appreciated from reading this description. Furthermore, in
some implementations of the invention, various layers of ELR
material may have different orientations from one another in a
given arrangement. For example, one layer of ELR material in an
arrangement may have the a-axis of its crystalline structure
oriented along the principal axis 2440 and another layer of the ELR
material in the arrangement may have the b-axis of its crystalline
structure oriented along the principal axis 2440. Other
orientations may be used within a given arrangement in accordance
with various implementations of the invention.
[0146] FIG. 34 illustrates a process for creating a modified ELR
material according to various implementations of the invention. In
an operation 3410, an appropriate surface 2710 is formed on or
within an ELR material. In some implementations of the invention
where ELR material exists as ELR material 2410 of c-film 2400,
appropriate surface 2710 is formed by exposing appropriate
surface(s) 2710 on or within primary surface 2430 of a c-film 2400.
In some implementations of the invention, appropriate surfaces of
ELR material 2410 may be exposed by modifying primary surface 2430
using any of the wet or dry processing techniques, or combinations
thereof, discussed above. In some implementations of the invention,
primary surface 2430 may be modified by chemical etching as
discussed above.
[0147] In some implementations of the invention where ELR material
exists as ELR material 3110 of a-b film 3100 (with or without
substrate 2420), appropriate surface 2710 is formed by layering ELR
material 3110 (in a proper orientation as described above) onto a
surface, which may or may not include substrate 2420.
[0148] In some implementations of the invention, appropriate
surfaces 2710 include surfaces of ELR material parallel to the
ab-plane. In some implementations of the invention, appropriate
surfaces 2710 include faces of ELR material parallel to the
b-plane. In some implementations of the invention, appropriate
surfaces 2710 include faces of ELR material parallel to the
a-plane. In some implementations of the invention, appropriate
surfaces 2710 include one or more faces of ELR material parallel to
different ab-planes. In some implementations of the invention,
appropriate surfaces 2710 include one or more faces not
substantially perpendicular to the c-axis of ELR material.
[0149] In some implementations of the invention, various optional
operations may be performed. For example, in some implementations
of the invention, appropriate surfaces 2710 or ELR material may be
annealed. In some implementations of the invention, this annealing
may be a furnace anneal or a rapid thermal processing (RTP) anneal
process. In some implementations of the invention, such annealing
may be performed in one or more annealing operations within
predetermined time periods, temperature ranges, and other
parameters. Further, as would be appreciated, annealing may be
performed in the chemical vapor deposition (CVD) chamber and may
include subjecting appropriate surfaces 2710 to any combination of
temperature and pressure for a predetermined time which may enhance
appropriate surfaces 2710. Such annealing may be performed in a gas
atmosphere and with or without plasma enhancement.
[0150] In an operation 3420, modifying material 2720 may be layered
onto one or more appropriate surfaces 2710. In some implementations
of the invention, modifying material 2720 may be layered onto
appropriate surfaces 2710 using various layering techniques,
including various ones described above.
[0151] FIG. 35 illustrates an example of additional processing that
may be performed during operation 3420 according to various
implementations of the invention. In an operation 3510, appropriate
surfaces 2710 may be polished. In some implementations of the
invention, one or more polishes may be used as discussed above.
[0152] In an operation 3520, various surfaces other than
appropriate surfaces 2710 may be masked using any generally known
masking techniques. In some implementations, all surfaces other
than appropriate surfaces 2710 may be masked. In some
implementations of the invention, one or more surfaces other than
appropriate surfaces 2710 may be masked.
[0153] In an operation 3530, modifying material 2720 may be layered
on to (or in some implementations and as illustrated in FIG. 35,
deposited on to) appropriate surfaces 2710 using any generally
known layering techniques discussed above. In some implementations
of the invention, modifying material 2720 may be deposited on to
appropriate surfaces 2710 using MBE. In some implementations of the
invention, modifying material 2720 may be deposited on to
appropriate surfaces 2710 using PLD. In some implementations of the
invention, modifying material 2720 may be deposited on to
appropriate surfaces 2710 using CVD. In some implementations of the
invention, approximately 40 nm of modifying material 2720 may be
deposited on to appropriate surfaces 2710, although as little as
1.7 nm of certain modifying materials 2720 (e.g., cobalt) has been
tested. In various implementations of the invention, much smaller
amounts of modifying materials 2450, for example, on the order of a
few angstroms, may be used. In some implementation of the
invention, modifying material 2720 may be deposited on to
appropriate surfaces 2710 in a chamber under a vacuum, which may
have a pressure of 5.times.10.sup.-6 torr or less. Various chambers
may be used including those used to process semiconductor wafers.
In some implementations of the invention, the CVD processes
described herein may be carried out in a CVD reactor, such as a
reaction chamber available under the trade designation of 7000 from
Genus, Inc. (Sunnyvale, Calif.), a reaction chamber available under
the trade designation of 5000 from Applied Materials, Inc. (Santa
Clara, Calif.), or a reaction chamber available under the trade
designation of Prism from Novelus, Inc. (San Jose, Calif.).
However, any reaction chamber suitable for performing MBE, PLD or
CVD may be used.
[0154] FIG. 36 illustrates a process for forming a modified ELR
material according to various implementations of the invention. In
particular, FIG. 36 illustrates a process for forming and/or
modifying an a-b film 3100. In an optional operation 3610, a buffer
layer is deposited onto a substrate 2420. In some implementations
of the invention, the buffer layer includes PBCO or other suitable
buffer material. In some implementations of the invention,
substrate 2420 includes LSGO or other suitable substrate material.
In an operation 3620, ELR material 3110 is layered onto substrate
2420 with a proper orientation as described above with respect to
FIG. 31. As would be appreciated, depending on optional operation
3610, ELR material 3110 is layered onto substrate 2420 or the
buffer layer. In some implementations of the invention, the layer
of ELR material 3110 is two or more unit layers thick. In some
implementations of the invention, the layer of ELR material 3110 is
a few unit layers thick. In some implementations of the invention,
the layer of ELR material 3110 is several unit layers thick. In
some implementations of the invention, the layer of ELR material
3110 is many unit layers thick. In some implementations of the
invention, ELR material 3110 is layered onto substrate 2420 using
an IBAD process. In some implementations of the invention, ELR
material 3110 is layered onto substrate 2420 while subject to a
magnetic field to improve an alignment of the crystalline
structures within ELR material 3110.
[0155] In an optional operation 3630, appropriate surface(s) 2710
(which with respect to a-b films 3100, corresponds to primary
surface 3130) of ELR material 3110 is polished using various
techniques described above. In some implementations of the
invention, the polishing is accomplished without introducing
impurities onto appropriate surfaces 2710 of ELR material 3110. In
some implementations of the invention, the polishing is
accomplished without breaking the clean chamber. In an operation
3640, modifying material 2720 is layered onto appropriate surfaces
2710. In an optional operation 3650, a covering material, such as,
but not limited to, silver, is layered over entire modifying
material 2720.
[0156] The flowcharts, illustrations, and block diagrams of the
figures illustrate the architecture, functionality, and operation
of possible implementations of methods and products according to
various implementations of the invention. It should also be noted
that, in some alternative implementations, the functions noted in
the blocks may occur out of the order noted in the figures. For
example, two blocks shown in succession may, in fact, be executed
substantially concurrently, or the blocks may sometimes be executed
in the reverse order, depending upon the functionality
involved.
[0157] Furthermore, although the foregoing description is directed
toward various implementations of the invention, it is noted that
other variations and modifications will be apparent to those
skilled in the art, and may be made without departing from the
spirit or scope of the invention. Moreover, various features
described in connection with one implementation of the invention
may be used in conjunction or combination with various other
features or other implementations described herein, even if not
expressly stated above.
* * * * *