U.S. patent application number 13/828890 was filed with the patent office on 2013-08-01 for solid-state imaging apparatus.
This patent application is currently assigned to CANON KABUSHIKI KAISHA. The applicant listed for this patent is CANON KABUSHIKI KAISHA. Invention is credited to Akira OKITA.
Application Number | 20130194468 13/828890 |
Document ID | / |
Family ID | 42336665 |
Filed Date | 2013-08-01 |
United States Patent
Application |
20130194468 |
Kind Code |
A1 |
OKITA; Akira |
August 1, 2013 |
SOLID-STATE IMAGING APPARATUS
Abstract
A solid-state imaging apparatus wherein an FD capacitor value is
variable without increasing the number of elements. There is
provided a solid-state imaging apparatus including a plurality of
photoelectric conversion elements arranged in a horizontal
direction and a vertical direction, for generating an electric
charge by photoelectric conversion; a plurality of transfer
transistors each connected to each of the photoelectric conversion
elements, for transferring the electric charge generated by the
plurality of photoelectric conversion elements; a plurality of
floating diffusion regions for holding the electric charge
transferred by the transfer transistors; a plurality of amplifiers
each connected to each of the floating diffusion regions, for
amplifying a signal based on the electric charge in the plurality
of floating diffusion regions; and a connecting unit for connecting
and disconnecting between the plurality of floating diffusion
regions.
Inventors: |
OKITA; Akira; (Yamato-shi,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
CANON KABUSHIKI KAISHA; |
Tokyo |
|
JP |
|
|
Assignee: |
CANON KABUSHIKI KAISHA
Tokyo
JP
|
Family ID: |
42336665 |
Appl. No.: |
13/828890 |
Filed: |
March 14, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12687163 |
Jan 14, 2010 |
|
|
|
13828890 |
|
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Current U.S.
Class: |
348/294 |
Current CPC
Class: |
H01L 27/14609 20130101;
H04N 5/347 20130101; H04N 5/335 20130101; H01L 27/14643 20130101;
H04N 5/343 20130101; H04N 5/37457 20130101 |
Class at
Publication: |
348/294 |
International
Class: |
H04N 5/335 20060101
H04N005/335 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 21, 2009 |
JP |
2009-011344 |
Claims
1. A solid-state imaging apparatus comprising: a plurality of
photoelectric conversion elements for generating an electric charge
by photoelectric conversion; a plurality of transfer transistors
each connected to each of the photoelectric conversion elements,
for transferring the electric charge generated by the plurality of
photoelectric conversion elements; a plurality of floating
diffusion regions for holding the electric charge transferred by
the plurality of transfer transistors; a plurality of amplifying
units each connected to each of the floating diffusion regions, for
amplifying a signal based on the electric charge in the plurality
of floating diffusion regions; and a connecting unit for connecting
and disconnecting between the plurality of floating diffusion
regions.
2. (canceled)
3. (canceled)
4. The solid-state imaging apparatus according to claim 1, wherein
color filters are arranged on the photoelectric conversion elements
and each of the floating diffusion regions is connected through the
transfer transistors to the photoelectric conversion elements
having color filters of the same color only.
5. The solid-state imaging apparatus according to claim 1, wherein
the photoelectric conversion element has color filters, and the
plurality of floating diffusion regions connected by the connecting
unit are connected through the transfer transistors to the
photoelectric conversion elements of a number 2N+1 (N is natural
number) having color filters of the same color.
6. The solid-state imaging apparatus according to claim 1, wherein
one pixel signal is read out by using at least two of the
amplifiers corresponding to the plurality of floating diffusion
regions connected by the connecting unit.
7. The solid-state imaging apparatus according to claim 1, wherein
the connecting unit sets a non-connecting state to amplify by the
amplifier in a first mode, and the connecting unit sets a
connecting state to amplify by the amplifier in a second mode.
8. The solid-state imaging apparatus according to claim 7, wherein
the connecting unit sets a connecting state to conduct a low
sensitivity reading out, and the connecting unit sets a
non-connecting state to conduct a high sensitivity reading out.
9. The solid-state imaging apparatus according to claim 1, wherein
the electric charges from the plurality of photoelectric conversion
elements are added in the plurality of floating diffusion regions
corrected by the connecting unit.
10. The solid-state imaging apparatus according to claim 9, further
comprising the connecting units wherein one or more of the
connecting units set the connecting state, and the other of the
connecting units set the non-connecting state, to add the electric
charges from the plurality of photoelectric conversion
elements.
11. The solid-state imaging apparatus according to claim 10,
wherein the plurality of connecting units change the connecting
state, to change a number of the photoelectric conversion elements
to be subjected to the addition of the electric charges.
12. The solid-state imaging apparatus according to claim 1, wherein
the electric charge from the photoelectric conversion element is
read out not by the amplifying units connected to the floating
diffusion region connected through the transfer transistor, but by
the amplifying units connected to the floating diffusion region
connected through the connecting unit.
13-15. (canceled)
16. The solid-state imaging apparatus according to claim 9, wherein
when the electric charges from the plurality of photoelectric
conversion elements are added by the plurality of transfer
transistors, the plurality of transfer transistors are
simultaneously turned off.
17. The solid-state imaging apparatus according to claim 9, wherein
when the electric charges from the plurality of photoelectric
conversion elements are added by the plurality of transfer
transistors, timings when the plurality of transfer transistors are
turned on are shifted.
18. The solid-state imaging apparatus according to claim 9, wherein
when signals of adjacent pixel rows are added, a connecting state
of the connecting units is shifted by one row and the addition is
performed.
19. The solid-state imaging apparatus according to claim 9, wherein
a Bayer array color filter is included, a number of photoelectric
conversion elements corresponding to a red color to be subjected to
the addition and a number of photoelectric conversion elements
corresponding to a green color to be subjected to the addition are
equal, and a number of the connecting units in a connecting state
is larger and an FD capacitor is larger when the addition
corresponding to the green color is performed.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a solid-state imaging
apparatus.
[0003] 2. Description of the Related Art
[0004] As a solid-state imaging apparatus used for an electronic
camera or the like, Japanese Patent Application Laid-Open No.
2000-232216 has been disclosed. The solid-state imaging apparatus
has two or more sets of photodiodes (PDs) and transfer MOS
transistors, performs reading out to a common floating diffusion
(FD) region, and performs amplification by a common source follower
MOS transistor.
[0005] Moreover, Japanese Patent Application Laid-Open No.
2000-165755 has disclosed a unit for providing a solid-state
imaging apparatus in which a MOS capacitor is added to an FD so
that an FD capacitor is variable, and sensitivity can be changed
corresponding to signal electric charges accumulated in a
photoelectric conversion section. It is possible to reduce an
output signal amplitude when a large amount of electric charges are
transferred to the FD, and to suppress an amplitude of a voltage on
and after a vertical signal line, by increasing the FD
capacitor.
[0006] However, Japanese Patent Application Laid-Open No.
2000-232216 increases the FD capacitor itself by having a common
FD, and thus has a problem of a degraded SN ratio (Signal to Noise
ratio).
[0007] Moreover, Japanese Patent Application Laid-Open No.
2000-165755 requires a capacitor unit for causing the FD capacitor
to be electrically variable, and thus has a problem of an increased
number of elements within a pixel and a reduced PD area.
[0008] An object of the present invention is to provide a
solid-state imaging apparatus which can cause an FD capacitor value
to be variable without increasing the number of elements.
SUMMARY OF THE INVENTION
[0009] A solid-state imaging apparatus of the present invention
includes a plurality of photoelectric conversion elements for
generating an electric charge by photoelectric conversion; a
plurality of floating diffusion regions; a plurality of transfer
transistors each connected to each of the photoelectric conversion
elements, for transferring the electric charge generated by each of
the photoelectric conversion elements to each of the floating
diffusion regions; a plurality of amplifying units each connected
to each of the floating diffusion regions, for amplifying a signal
based on the electric charge in the floating diffusion regions; and
a connecting unit for connecting and disconnecting between the
plurality of floating diffusion regions.
[0010] Further features of the present invention will become
apparent from the following description of exemplary embodiments
with reference to the attached drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] FIG. 1 illustrates a pixel circuit diagram of a solid-state
imaging apparatus according to a first embodiment of the present
invention.
[0012] FIG. 2 illustrates a whole circuit diagram of a solid-state
imaging apparatus wherein the pixel circuits in FIG. 1 are arranged
in a two dimensional array.
[0013] FIG. 3 shows a timing diagram of driving a circuit shown in
FIG. 2 for reading out a photo carrier from a small capacity of FD
according to a first embodiment of the present invention.
[0014] FIG. 4 illustrates a pixel circuit diagram of a solid-state
imaging apparatus according to a second embodiment of the present
invention.
[0015] FIGS. 5A and 5B illustrate a pixel circuit diagram of a
solid-state imaging apparatus according to a third embodiment of
the present invention.
[0016] FIGS. 6A and 6B illustrate a pixel circuit diagram of a
solid-state imaging apparatus according to a fourth embodiment of
the present invention.
[0017] FIG. 7 illustrates a pixel circuit diagram of a solid-state
imaging apparatus according to a fifth embodiment of the present
invention.
[0018] FIG. 8 illustrates a pixel circuit diagram of a solid-state
imaging apparatus according to a sixth embodiment of the present
invention.
[0019] FIG. 9 illustrates a pixel circuit diagram of a solid-state
imaging apparatus according to a seventh embodiment of the present
invention.
[0020] FIG. 10 illustrates a pixel circuit diagram of a solid-state
imaging apparatus according to an eighth embodiment of the present
invention.
[0021] FIG. 11 shows a modification of the pixel circuit diagram
shown in FIG. 1, as to a connection of the reset transistor
connected to the FD region.
[0022] FIG. 12 illustrates a construction example of an imaging
system (still video camera) according to a ninth embodiment of the
present invention.
[0023] FIG. 13 shows a timing diagram of driving the circuit shown
in FIG. 2 for reading out the photo carriers from a larger capacity
of FD according to the first embodiment of the present
invention.
[0024] FIG. 14 shows a timing diagram of driving the circuit shown
in FIG. 2 with non-simultaneous turning on the transfer transistors
102a and 102b.
[0025] FIGS. 15A, 15B and 15C conceptually illustrate an addition
operation in the solid-state imaging apparatus according to a ninth
embodiment of the present invention.
[0026] FIGS. 16A, 16B and 16C illustrate an example in which the FD
connection pattern has been changed.
[0027] FIGS. 17A, 17B and 17C illustrate an example in which one or
more FD capacitors which are not used for the addition are
connected.
[0028] FIGS. 18A, 18B, 18C and 18D illustrate an example wherein,
when photo carriers of adjacent pixels are added, the control data
for the FD connecting transistors in each of the adjacent pixels is
the same.
[0029] FIGS. 19A, 19B and 19C illustrate an operation when the
pixel addition is performed.
DESCRIPTION OF THE EMBODIMENTS
First Embodiment
[0030] FIG. 1 illustrates a circuit for two pixels in a solid-state
imaging apparatus according to a first embodiment of the present
invention. Photodiodes (PDs) 101a and 101b are photoelectric
conversion elements for generating an electric charge by
photoelectric conversion. Each of transfer transistors 102a and
102b transfers the electric charge generated in each of the
photodiodes 101a and 101b to each of floating diffusion (FD)
regions 103a and 103b. Source follower (SF) amplifiers (amplifiers)
104a and 104b output voltages which have been electric
charge-voltage converted in the FD regions 103a and 103b. Selecting
transistors 105a and 105b control outputs of the source follower
amplifiers 104a and 104b, and are connected to a vertical signal
line 106. Moreover, the vertical signal line 106 is connected to a
constant current source 107.
[0031] The FD region 103a is connected to a reset transistor 108,
and an FD connecting transistor (connecting unit) 109 is provided
between the FD regions 103a and 103b, for setting these FD regions
to be one of conducting and non-conducting. Moreover, the reset
transistor 108, and the SF amplifiers 104a and 104b are connected
to power supplies SVDDs of the pixels.
[0032] Moreover, while the reset transistor 108 is connected only
to the FD region 103a in FIG. 1, a reset transistor 108' may be
connected to the FD region 103b as illustrated in FIG. 11. On such
an occasion, FD capacitors of the FD regions 103a and 103b can be
more equalized, a variation in a gain of each FD region can be
suppressed, and image quality can be improved.
[0033] In the circuit of FIG. 1, when a large amount of photo
carriers are generated in one of the PDs 101a and 101b, the FD
connecting transistor 109 is turned on to connect the FD regions
103a and 103b. Thereby, since the FD capacitor is increased, the
voltage generated on the FD region can be suppressed. As a result
thereof, saturation of the voltage on and after the vertical signal
line 106 can be suppressed, and a dynamic range can be
enlarged.
[0034] Moreover, in a state where a small amount of photo carriers
are generated in one of the PDs 101a and 101b, the FD connecting
transistor 109 is turned off to separate the FD region 103a from
the FD region 103b. Thereby, since the FD capacitor is decreased,
the voltage generated on the FD region increases, and a good SN
ratio can be obtained.
[0035] Moreover, when the photo carriers in the PD 101a are read
out, if the FD connecting transistor 109 has been turned on to
connect the FD regions 103a and 103b, the selecting transistor 105a
may be turned on to amplify by the SF amplifier 104a.
Simultaneously, the selecting transistor 105b may be turned on to
also use the SF amplifier 104b to perform the amplification. On
this occasion, since two SF amplifiers 104a and 104b are used, a
channel width W of a MOS transistor is effectively doubled.
Therefore, there is an effect of reducing a 1/f noise caused by the
SF amplifiers 104a and 104b, and as a result, the good SN ratio can
be obtained.
[0036] Moreover, at the same time, since the channel width W of the
MOS transistor is doubled, a so-called overdrive voltage can be
decreased. Therefore, a larger portion of the dynamic range of the
vertical signal line 106 can be used.
[0037] Moreover, when the photo carriers in the PD 101a are read
out, if the FD connecting transistor 109 has been turned on to
connect the FD regions 103a and 103b, either one of the selecting
transistor 105a and the selecting transistor 105b may be turned on.
In that case, the amplification is performed by either one of the
SF amplifiers 104a and 104b. Thereby, when the 1/f noise of either
one of the SF amplifiers 104a and 104b is extremely large, or when
either one of the SF amplifiers 104a and 104b, or the selecting
transistors 105a and 105b are defective and any normal output
cannot be obtained, a normal side can be used. Thereby, there is an
effect on improvement in a yielding ratio and improvement in the SN
ratio.
[0038] Moreover, when it is determined which transistor is turned
on, a selected row is determined in units of rows. Therefore, a
test result can be previously read to select a transistor with a
small noise, and a non-defective transistor can be selected.
[0039] FIG. 2 is an entire circuit diagram of the solid-state
imaging apparatus constructed by arranging the pixel circuits of
FIG. 1 in a two-dimensional array form. FIG. 2 illustrates an
example of four rows and two columns, which, however, is not
limited to this example and can accommodate a larger number of
matrices of pixels.
[0040] Among pixel blocks of FIGS. 1, 201 to 204, the blocks 201
and 203 are connected to the vertical signal line 106, and the
blocks 202 and 204 are connected to a vertical signal line
106'.
[0041] Moreover, the blocks 201 and 202 are connected to common
drive lines. In other words, a drive line Pres is connected to a
gate electrode of the reset transistor 108. A drive line Ptx_a is
connected to the transfer transistor 102a. A drive line Psel_a is
connected to the selecting transistor 105a. A drive line Ptx_b is
connected to the transfer transistor 102b. A drive line Psel_b is
connected to the selecting transistor 105b. A drive line Padd is
connected to the FD connecting transistor 109. Also, the blocks 203
and 204 are connected to common drive lines similarly to the blocks
201 and 202.
[0042] A vertical scanning circuit 205 sequentially selects the
pixel block in a vertical direction. An operational amplifier 207
has a plus terminal connected to a reference voltage Vref, and a
minus terminal connected to a clamp capacitor C0 206. Moreover, the
minus terminal is connected to a feedback capacitor Cf 208 and a
switch 209, and a gain of (C0/Cf) times can be applied to a signal
from the pixel. Moreover, two or more of the feedback capacitors
208 may be provided, and the operational amplifier 207 may be able
to change the gain by switching two or more of the feedback
capacitors 208. The other terminals of the feedback capacitor 208
and the switch 209 are connected to an output terminal of the
operational amplifier 207. The output terminal of the operational
amplifier 207 is connected to a reference signal holding capacitor
(CTN) 210 and an optical signal holding capacitor (CTS) 211,
through switches 212 and 213, respectively. The switches 209, 212
and 213 are connected to drive pulses PC0R, PTN and PTS,
respectively. Signals held by the capacitors 210 and 211 are output
to a horizontal output line (CHN) 217 and a horizontal output line
(CHS) 218 by turning on column selecting switches 215 and 216 by
means of pulses which are sequentially output from a horizontal
scanning circuit 214. A differential signal of these signals is
taken and output by a differential output amplifier 219. Switches
220 and 221 are switches for resetting the horizontal output line
(CHN) 217 and the horizontal output line (CHS) 218 to Vchr by means
of a drive pulse PCHR at a desired timing.
[0043] FIG. 3 illustrates drive timings in a case where the FD
capacity is made smaller and reading out from the small capacity of
FD is performed. A time when the vertical scanning circuit 205 sets
the blocks 201 and 202 to an active state will be described. It
should be noted that a state where the photo carriers have been
already accumulated in the PDs 101a and 101b is assumed.
[0044] First, a driving method for reading out the photo carriers
in a row of the PD 101a will be described. In an initial state at
time T=t0, the Pres is at a high level (ON state), the Padd is also
at the high level, and the FD regions 103a and 103b are reset by a
voltage SVDD through the reset transistor 108 and the FD connecting
transistor 109. Moreover, in a read-out circuit, the PC0R is at the
high level, the switch 209 is turned on, and the operational
amplifier 207 buffers and outputs the voltage Vref. Moreover, the
PCHR is at the high level, and the horizontal output lines 217 and
218 are fixed to the voltage Vchr.
[0045] At time T=t1, the Psel_a becomes the high level, and the SF
104a is set to the active state.
[0046] At time T=t2, the Padd becomes a low level (OFF state). At
time T=t3, the Pres becomes the low level (OFF state). Then, the FD
regions 103a and 103b are set to a reset state. In this state, in
the vertical signal line 106, an output which has buffered the
voltage that has reset the FD regions is generated.
[0047] At time T=t4, the PC0R is set to the low level, and the
vertical signal line 106 is clamped.
[0048] At time T=t5, the PTN is set to the high level. At time
T=t6, the PTN is set to the low level. Then, the output of the
operational amplifier 207 at the time of the clamp is written to
the capacitor (CTN) 210.
[0049] The transfer transistor 102a is turned on and off by setting
the Ptx_a to the high level at time T=t7 and setting the Ptx_a to
the low level at time T=t8. Thereby, signal electric charges in the
PD 101a are read out to the FD region 103a by complete transfer.
Thereby, an FD electric potential is lowered, and a voltage of a
signal output line also varies accordingly. This variation appears
as a gain of "-(C0/Cf) times" at the output of the operational
amplifier 207.
[0050] At time T=t9, the PTS is set to the high level. At time
T=t10, the PTS is set to the low level. The output of the
operational amplifier 207 at this time is written to the capacitor
(CTS) 211.
[0051] These operations are also simultaneously performed in the
adjacent block 202. The respective reset voltages and the voltages
corresponding to the photo carriers generated in the respective PDs
are written to the capacitor (CTN) 210 and the capacitor (CTS) 211,
respectively.
[0052] At time T=t11 and t12, the signals written to the capacitor
(CTN) 210 and the capacitor (CTS) 211 are output to the horizontal
output lines 217 and 218 by turning on the switches 215 and 216 by
means of a signal .PHI.H1 from the horizontal scanning circuit 214
during a horizontal transfer period. The differential signal of the
horizontal output lines 217 and 218 is output by the differential
output amplifier 219. This operation is sequentially repeated, and
at time T=t13 and t14, the signal in the block 202 is read out by
means of a signal .PHI.H2. Then, a difference between an optical
signal and a noise signal is output by the differential output
amplifier 219.
[0053] Next, a driving method for reading out the photo carriers in
a row of the PD 101b will be described. Basic operations are the
same as the operations for the PD 101a, but are different in that,
since the PD 101b is read out, the drive timing of the Psel_a is
replaced with the Psel_b, and similarly, the drive timing of the
Ptx_a is replaced with the Ptx_b.
[0054] If the FD capacitor is increased and the reading out is
performed, the timing of the Padd may be fixed to the high level in
FIG. 3. Thereby, both when the PD 101a is read out and when the PD
101b is read out, the FD capacitor is increased. Also, even if a
large amount of signal electric charges have been transferred to
the FD regions 103a and 103b, variation in the voltages of the FD
regions 103a and 103b can be suppressed to small. Thus, the
saturation of the voltage on and after the vertical signal line 106
can be suppressed, and the dynamic range can be enlarged.
[0055] Moreover, when the two SF amplifiers 104a and 104b are used
to perform the reading out, the FD connecting transistor 109 is
turned on. Then, in a state where the FD regions 103a and 103b are
connected to each other, the selecting transistors 105a and 105b
may be driven at a timing when a logical sum (AND) of the Psel_a
and the Psel_b of FIG. 3 has been taken. Thereby, the channel width
W of the MOS transistor is effectively doubled. Therefore, there is
the effect of reducing the 1/f noise caused by the SF amplifiers
104a and 104b, and as a result, the good SN ratio can be
obtained.
[0056] Moreover, the electric charges in the PD 101a can also be
read out by the SF amplifier 104b. On such an occasion, the SF 104b
may be driven at the timing of the Psel_a of FIG. 3.
[0057] Moreover, the electric charges in two PDs 101a and 101b can
also be added. As driving on such an occasion, the FD connecting
transistor 109 is turned on to connect the FD regions 103a and 103b
to each other, and then, the transfer transistors 102a and 102b may
be driven at a timing when a logical sum (AND) of the Ptx_a and the
Ptx_b has been taken. The SF amplifiers 105a and 105b to be
operated then may be driven as described above, and multiple or one
of the SF amplifiers 105a and 105b may be selected. As specific
driving on such an occasion, the FD connecting transistor 109 is
turned on to connect the FDs 103a and 103b to each other, and then,
the transfer transistors 102a and 102b may be driven at the timing
when the logical sum (AND) of the Ptx_a and the Ptx_b has been
taken, as specifically illustrated in FIG. 13.
[0058] Moreover, while timings when the transfer transistors 102a
and 102b are turned on may not be simultaneous, timings when the
transfer transistors 102a and 102b are turned off can be
simultaneous. An example is illustrated in FIG. 14. The reason is
that when the transfer transistor is turned on, the electric
potential of the FD is raised to be a higher electric potential and
the transfer becomes easier, while when the transfer transistor is
turned off, the electric potential of the FD is lowered, and
conversely, the transfer becomes difficult. Therefore, the reason
is that when one of the transfer transistors is turned off and
subsequently the other of the transfer transistors is turned off,
the electric charge in the PD that is turned off later remains to
be transferred, and image quality degradation such as an residual
image is caused. In other words, more electric charges can be
transferred by simultaneously turning off the transfer transistors
when the electric charges in a plurality of the PDs are read out to
a common FD.
[0059] Furthermore, since ON timings of the Ptx_a and the Ptx_b are
shifted, buffer circuits which supply drive pulses for the Ptx_a
and the Ptx_b are not simultaneously turned on. Therefore, a power
supply voltage variation is reduced, and there is also an effect of
reducing noise generation.
[0060] Moreover, the SF amplifiers 104a and 104b to be operated may
be driven as described above, and multiple or one of the SF
amplifiers 104a and 104b may be selected.
Second Embodiment
[0061] FIG. 4 illustrates the pixel circuit in the solid-state
imaging apparatus according to a second embodiment of the present
invention. FIG. 4 is different from FIG. 1 in that a PD 401a is
connected to the FD region 103a through a transfer transistor 402a.
Similarly, a photodiode 401b is connected to the FD region 103b
through a transfer transistor 402b. In other words, this structure
includes two pairs of pixel structures having a common FD region
and a common SF amplifier for two PDs, and the FD regions 103a and
103b are connected to each other by the FD connecting transistor
109. Read-out timings are basically the same, though the Psel, the
Ptx and the like are increased in addition to the timings
illustrated in FIG. 3.
[0062] In this case, in a case of a Bayer array color filter, since
the PD 101a and the PD 101b become the same color, and the PDs 401a
and 401b also become the same color, addition of the same color is
enabled.
[0063] Moreover, the present embodiment has shown the pixel
structures having the common FD region and the common SF amplifier
for two PDs, which, however, is not limited to two. The present
embodiment also has a similar effect on pixel structures having the
common FD region and the common SF amplifier for two or more of the
PDs.
Third Embodiment
[0064] FIGS. 5A and 5B illustrate the pixel circuit in the
solid-state imaging apparatus according to a third embodiment of
the present invention. FIG. 5A is different from FIG. 4 in that
FIG. 5A has a structure including three pairs of pixel structures
having the common FD region and the common SF amplifier for two
PDs, in which FD regions 103a, 103b and 103c are connected to one
another by FD connecting transistors 109 and 109b. Moreover, FIG.
5B is different from FIG. 4 in that the common FD region is
included for three PDs. The read-out timings are basically the
same, though the Psel, the Ptx, the Padd and the like are increased
in addition to the timings illustrated in FIG. 3.
[0065] In this case, in the case of the Bayer array color filter,
since the PDs 101a, 101b and 101c become the same color, and the
PDs 401a, 401b and 401c also become the same color, there is an
effect of enabling the addition of the same color. Color centers of
different colors are set at regular intervals by performing the
same color addition for an odd number of pixels. Moreover, the
present embodiment has shown the structure (2.times.3 structure)
including three pairs of pixel structures having the common FD
region and the common SF amplifier for two PDs, and the structure
(3.times.2 structure) including two pairs of pixel structures
having the common FD region and the common SF amplifier for three
PDs, which, however, are not limited thereto. The present
embodiment also has a similar effect on structures such as
(2.times.5), (2.times.7), (5.times.2) and (7.times.2).
Fourth Embodiment
[0066] FIGS. 6A and 6B illustrate the pixel circuit in the
solid-state imaging apparatus according to a fourth embodiment of
the present invention. FIG. 6B illustrates the inside of a pixel
block 601 of FIG. 6A. FIG. 6B illustrates a diagram of the common
FD region for two pixels, which, however, may not be necessarily
two pixels.
[0067] FIG. 6A has a structure in which 15 pixel blocks of FIG. 6B,
601, 601b to 601n are connected, and the respective pixel blocks
are connected to one another by FD connecting transistors 109, 109b
to 109n. Moreover, the pixel block 601 is connected to the voltage
SVDD through the reset transistor 108.
[0068] While a basic read-out method is similar to the method shown
in the second and third embodiments, the present embodiment is
characterized in that the pixels to be added can be switched.
[0069] For example, if three-pixel addition is performed, the FD
region is reset, and subsequently, the FD connecting transistors
109c, 109f, 109i and 109l are set to the OFF state, and the other
FD connecting transistors are set to the ON state. Thereby,
three-pixel addition reading out is enabled. Moreover, if
five-pixel addition is performed, the FD region is reset, and
subsequently, the FD connecting transistors 109e and 109i are set
to the OFF state, and the other FD connecting transistors are set
to the ON state. Thereby, five-pixel addition reading out is
enabled.
[0070] In other words, there is an effect of enabling to change a
type of the addition among a plurality of types only by changing
the driving of the FD connecting transistors. While the present
embodiment has shown an example of switching between the
three-pixel addition and the five-pixel addition, an arbitrary
combination is apparently possible.
Fifth Embodiment
[0071] FIG. 7 illustrates the pixel circuit in the solid-state
imaging apparatus according to a fifth embodiment of the present
invention. As a circuit diagram, the present embodiment has
combined two constructions of FIG. 4 in the second embodiment. In
other words, the present embodiment has a construction which has
combined two structures, and in each of the two structures, two
pairs of pixel structures having the common FD region and the
common SF amplifier for two PDs are connected to each other by the
FD connecting transistor 109. FIG. 7 is different from FIG. 4 in
that two PDs having the same color are connected to the common FD
region.
[0072] An FD section 701a can transfer outputs of two green (G)
pixels (PDs). Moreover, an FD section 701b can transfer outputs of
two red (R) pixels (PDs). The same applies to FD sections 701c and
701d. FD connecting transistors 702a and 702b are adapted to
connect between the FD regions having the outputs of the same
color.
[0073] In a case of pixels in a Bayer array, different colors are
alternately and continuously arranged in a vertical direction.
Therefore, there is an effect of enabling easy addition of three or
more pixels of the same color by connecting two PDs of the same
color to the common FD region, and connecting between the FD
regions.
Sixth Embodiment
[0074] FIG. 8 illustrates the pixel circuit in the solid-state
imaging apparatus according to a sixth embodiment of the present
invention. In the present embodiment, the FD connecting transistor
109 is provided for setting the FD regions in a horizontal
direction to be one of conducting and non-conducting. Thereby,
there is an effect of enabling the same color addition in the
horizontal direction. As the driving method, the driving may be
performed basically in the same method as the method described in
the first embodiment. On such an occasion, since the same signal is
generated in the vertical signal lines 106 and 106', the constant
current source of the column of either one of the vertical signal
lines 106 and 106' may be stopped. Thereby, there is an effect of
reducing current consumption.
Seventh Embodiment
[0075] FIG. 9 illustrates the pixel circuit in the solid-state
imaging apparatus according to a seventh embodiment of the present
invention. In the present embodiment, FD connecting transistors
109, 109p and 109q are provided for setting the FD regions in the
vertical direction and the horizontal direction to be one of
conducting and non-conducting. Thereby, there is an effect of
enabling the same color addition in the horizontal direction and
the vertical direction. While the present embodiment has shown an
example of 2.times.2, arbitrary addition such as 3.times.3 is
enabled.
[0076] As the driving method, the driving may be performed
basically in the same method as the method described in the first
embodiment. On such an occasion, since the same signal is generated
in the vertical signal lines 106 and 106', the constant current
source of the column of either one of the vertical signal lines 106
and 106' may be stopped. Thereby, there is the effect of reducing
the current consumption.
Eighth Embodiment
[0077] FIG. 10 illustrates the pixel circuit in the solid-state
imaging apparatus according to an eighth embodiment of the present
invention. The present embodiment is different from FIG. 1 in that
the present embodiment is constructed without the selecting
transistors 105a and 105b. Instead of the selecting transistors
105a and 105b which are excluded, the present embodiment has a
construction in which a switch 1001 that can switch a reset power
supply between a positive electric potential SVDD and a ground
electric potential GND is connected to each row.
[0078] At the row for which the reading out is not performed, the
switch 1001 can set the ground electric potential GND, write the
electric potential to the FD regions 103a and 103b, ground gate
electric potentials of the SF amplifiers 104a and 104b, and set the
SF amplifiers 104a and 104b to be inactive. Conversely, at the row
for the reading out, the switch 1001 can set the positive electric
potential SVDD, reset the FD regions 103a and 103b through the
reset transistor 108 and the FD connecting transistor 109, and set
the SF amplifiers 104a and 104b to be active.
[0079] In this way, the selecting transistors 105a and 105b of a
unit pixel are eliminated, by which areas of the photodiodes 101a
and 101b can be increased, or by which a pixel pitch can be
reduced. Therefore, a high-image-quality solid-state imaging
apparatus can be provided.
Ninth Embodiment
[0080] FIGS. 15A to 15C conceptually illustrate an addition
operation in the solid-state imaging apparatus according to a ninth
embodiment of the present invention. R and Gb denote respective
photodiodes PDs. Two PDs are set as one set, and the FD connecting
transistor is provided between adjacent PD sets. R and G denote red
and green in the Bayer array, respectively. Here, while there are
only R and G since only one predetermined column is illustrated,
pixels corresponding to G and B are arranged in an adjacent
column.
[0081] FIG. 15A illustrates a connecting/non-connecting state of
the FD connecting transistors in a first addition operation. FIG.
15A illustrates that, in order to add R pixel signals of three
pixels within a long dashed short dashed line X04, the FD
connecting transistors corresponding thereto are turned on. A
signal from the PD corresponding to R within the long dashed short
dashed line is transferred to the FD. Moreover, a drive signal for
the FD connecting transistor, which is supplied from a vertical
control circuit, is represented with an arrow and ON/OFF. As the
vertical control circuit, the vertical scanning circuit in the
above described embodiment can be used.
[0082] Here, while a timing when the FD connecting transistor is
turned on and a timing when the transfer from the PD to the FD is
performed may be simultaneous or different, the transfer may be
simultaneously performed from a perspective of acceleration of the
transfer. Three pixels of R pixels are added by controlling the FD
connecting transistors as illustrated in FIG. 15A.
[0083] FIG. 15B illustrates a second addition operation performed
at an arbitrary timing after completion of FIG. 15A. Control data
for the FD connecting transistors is shifted by one row so that
pixel centers (sampling pitches) of R and G after the addition are
identical, and the state of the FD connecting transistors is set to
a state illustrated in FIG. 15B. The state is a connecting state
where Gb pixels within the long dashed short dashed line can be
added. Subsequently, electric charges of the Gb pixels are
transferred to the FDs. Thereby, the addition in which the pixel
centers are equalized can be performed while the FD capacitors are
equalized.
[0084] FIG. 15C illustrates a third addition operation performed at
an arbitrary timing after completion of FIGS. 15A and 15B. The R
pixels to be added are three pixels existing within the long dashed
short dashed line. When this operation is performed, the control
data for the FD connecting transistors is shifted by two rows from
FIG. 15A, or shifted by one row from FIG. 15B, thereby the
connecting state is changed, and subsequently, electric charges of
the R pixels are transferred.
[0085] Here, the control data for the connecting transistors may be
updated according to one control period of the vertical control
circuit for controlling the reading out or the transfer, that is, a
so-called horizontal blanking period. For example, a shift register
for controlling a connecting switch, or a memory element may be
provided in the vertical control circuit, and an update timing
thereof may be synchronized with the horizontal blanking
period.
[0086] Hereinafter, variations of a FD connection pattern are
shown.
[0087] FIGS. 16A to 16C illustrate an example in which the FD
connection pattern has been changed. In FIG. 16A, scan similar to
FIG. 15A can be performed.
[0088] In FIG. 16B, an operation different from FIG. 15B is
performed. Specifically, the Gb pixel which is not actually added
is also connected by the FD connecting transistor. In other words,
while three sets of FDs have been connected in FIG. 15B, four sets
of FDs, which have been further increased by one, are connected in
FIG. 16B. In addition, the electric charges of only the Gb pixels
illustrated by thick-line boxes are transferred, and thereby the
addition is performed. Control data for the FD connection is
advanced by one row in a scan direction, and is not advanced on an
opposite side of the scan. Thereby, the FD capacitors of only the
Gb pixels with particularly high sensitivity can be increased, and
green output saturation can be prevented. In FIG. 16C, an operation
similar to FIG. 15C can be performed.
[0089] FIGS. 17A to 17C illustrate an example in which one or more
FD capacitors which are not used for the addition are connected for
both R and Gb. In all of FIGS. 17A to 17C, the FD connecting
transistors are turned on in order to connect the FDs of the pixels
illustrated within the long dashed short dashed line. For both R
and Gb, the FD capacitors can be increased and output saturation
can be suppressed.
[0090] In FIGS. 18A to 18D, when adjacent R and Gb are added, the
control data for the FD connecting transistors in each of the
adjacent R and Gb is the same. In other words, in FIGS. 18A and
18B, the addition is performed by switching the PD from which the
transfer to the FD is performed, without changing the connecting
state of the FD connecting transistors. The same applies to FIGS.
18C and 18D. According to such an operation, an additional effect
of enabling simplification of the control data for the FD
connecting transistors and the control thereof can be obtained.
Tenth Embodiment
[0091] In the present embodiment, an example is shown which is
effective when the addition is performed by connecting two or more
FDs, without connecting the FD which is not related to the
addition. A color filter array is, for example, the Bayer array.
The color filter array includes a construction in which one FD is
provided corresponding to one PD, in other words, a construction in
which the FD is not shared.
[0092] An operation when the pixel addition is performed is
illustrated in FIGS. 19A to 19C. Here, the FDs corresponding to the
PDs of adjacent Rs are connected to each other via the FD of Gb.
Then, at a next timing, a shift by three rows is performed and a
plurality of Gb pixels are added. Then the operation is performed
via the Rs. The R and Gb pixels via which the operation is
performed do not lose information since the electric charges are
not transferred from the PDs to the FDs, and signals thereof are
used for subsequent addition.
[0093] As an effect of the present example, when the same color
addition is performed, lines dedicated for the addition are not
required to be arranged across the different colors. As a result
thereof, the number of lines arranged in the vertical direction can
be decreased, a PD opening rate can be improved, and finer pixels
are enabled.
[0094] Moreover, in the present example, a circuit in which the FD
is not shared has been described as a unit. However, even if the FD
is shared, the above described effect obtained by performing the
operation via the FD which is not used can be similarly
obtained.
Eleventh Embodiment
[0095] FIG. 12 is a diagram illustrating a construction example of
an imaging system (still video camera) according to a ninth
embodiment of the present invention. The imaging system is a system
using the solid-state imaging apparatus of the above described
arbitrary embodiment. A construction of the imaging system will be
described. A barrier 1 is used for protecting a lens 2 and also as
a main switch. The lens 2 images an optical image of a subject to a
solid-state imaging device 4. A diaphragm 3 varies an amount of
light passing through the lens 2. The solid-state imaging device 4
corresponds to the solid-state imaging apparatus of the first to
eighth embodiments, and captures the subject imaged by the lens 2
as an image signal. An image signal processing circuit 5 performs
processes such as various corrections and clamping for the image
signal output by the solid-state imaging device 4. An A/D converter
6 performs analog-digital conversion of the image signal output by
the image signal processing circuit 5. A signal processing unit 7
performs various corrections for image data output by the A/D
converter 6, and compresses the data. A timing generator 8 outputs
various timing signals to the solid-state imaging device 4, the
image signal processing circuit 5, the A/D converter 6 and the
signal processing unit 7. It should be noted that respective
circuits of the image signal processing circuit 5, the A/D
converter 6, the signal processing unit 7 and the timing generator
8 may be formed on the same chip as the solid-state imaging device
4. Moreover, a whole controlling and arithmetic operation unit 9
controls various arithmetic operations and the whole imaging
system. A memory unit 10 temporarily stores the image data. An I/F
unit controlling recording medium 11 performs recording to or the
reading out from a recording medium 12. The recording medium 12 is
a removable medium such as a semiconductor memory for recording or
reading out the image data. An external interface (I/F) unit 13
communicates with an external computer or the like.
[0096] Next, operations in FIG. 12 will be described. When the
barrier 1 is opened, a main power supply is turned on. Next, a
power supply of a control system is turned on. Furthermore, power
supplies of imaging system circuits of the A/D converter 6 and the
like are turned on. Then, in order to control an exposure amount,
the whole controlling and arithmetic operation unit 9 releases the
diaphragm 3, and the signal output by the solid-state imaging
device 4 passes through the image signal processing circuit 5 to be
output to the A/D converter 6. The A/D converter 6 performs the A/D
conversion of the signal, and outputs the A/D converted signal to
the signal processing unit 7. Based on the data thereof, the signal
processing unit 7 performs an arithmetic operation for an exposure
in the whole controlling and arithmetic operation unit 9.
[0097] A brightness is determined based on a result of performing
this photometry, and depending on a result thereof, the whole
controlling and arithmetic operation unit 9 controls the diaphragm
3. Next, based on the signal output by the solid-state imaging
device 4, a high-frequency component is extracted, and an
arithmetic operation for a distance to the subject is performed in
the whole controlling and arithmetic operation unit 9.
Subsequently, the lens 2 is driven, and it is determined whether or
not the lens 2 is in focus. When it is determined that the lens 2
is out of focus, the lens 2 is driven again to measure the
distance.
[0098] Then, after it is confirmed that the lens 2 is in focus, a
real exposure is started. When the exposure is completed, the image
signal output by the solid-state imaging device 4 is corrected in
the image signal processing circuit 5, and is further A/D converted
in the A/D converter 6. The image signal passes through the signal
processing unit 7 to be accumulated in the memory unit 10 by the
whole controlling and arithmetic operation unit 9. Subsequently,
the data accumulated in the memory unit 10 passes through the I/F
unit controlling recording medium 11 to be recorded in the
removable recording medium 12 such as the semiconductor memory,
under the control of the whole controlling and arithmetic operation
unit 9. In addition, the data accumulated in the memory unit 10 may
pass through the external I/F unit 13 to be directly input to the
computer or the like for image processing.
[0099] According to the present embodiment, a high-quality imaging
system with low power consumption can be constructed.
[0100] According to the first to ninth embodiments, if an image of
a high-luminance subject for which a large amount of photo carriers
are generated is taken, the FD connecting transistor sets a
connecting state to increase the FD capacitor. Thereby, the voltage
generated on the FD region can be suppressed. As a result thereof,
the saturation of the voltage on and after the vertical signal line
106 can be suppressed, and the dynamic range can be enlarged.
[0101] Moreover, in a state where a small amount of photo carriers
are generated, the FD connecting transistor sets a non-connecting
state to separate the FD region. Thereby, since the FD capacitor is
decreased, the voltage generated on the FD region increases, and
the good SN ratio can be obtained. Moreover, since a MOS capacitor
is not added, the PD area is not compressed and a large PD area can
be secured. Therefore, sensitivity and the saturation can be
improved, and a high-performance solid-state imaging apparatus can
be provided.
[0102] In the solid-state imaging apparatus of the first to ninth
embodiments, a plurality of photoelectric conversion elements
(photodiodes) 101, 401 are arranged in a horizontal direction and a
vertical direction, and generate an electric charge by
photoelectric conversion. Each of a plurality of transfer
transistors 102, 402 is connected to each of the photoelectric
conversion elements 101, 401, and transfers the electric charge
generated by the plurality of photoelectric conversion elements
101, 401. A plurality of floating diffusion (FD) regions 103, 701
hold the electric charge transferred by the transfer transistors
102, 402. Each of a plurality of amplifiers (SF amplifiers) 104 is
connected to each of the floating diffusion regions 103, 701, and
amplifies a signal based on the electric charge in the plurality of
floating diffusion regions 103, 701. A connecting unit (FD
connecting transistor) 109, 702 connects and disconnects between
the plurality of floating diffusion regions 103, 701.
[0103] Moreover, one of the floating diffusion regions 103, 701 is
connected commonly to two or more of the transfer transistors 102,
402. Moreover, two or more of the connecting units 109, 702 are
included. Moreover, each of a plurality of selecting transistors
105 is connected to each of the amplifiers 104, and the plurality
of selecting transistors 105 select the plurality of amplifiers
104.
[0104] Moreover, the photoelectric conversion element 101, 401 has
a color filter. Each of the plurality of floating diffusion regions
103, 701 is connected through the transfer transistors 102, 402 to
the photoelectric conversion elements 101, 401 having color filters
of the same color only.
[0105] Moreover, the plurality of floating diffusion regions 103,
701 connected by the connecting unit 109, 702 are connected through
the transfer transistors 102, 402 to the photoelectric conversion
elements 101, 401 of a number 2N+1 (N is natural number) having
color filters of the same color. For example, N is 1 or 2, and one
of the three-pixel addition and the five-pixel addition is
performed.
[0106] Moreover, as illustrated in FIG. 2 and the like, the
connecting unit 109, 702 connects the plurality of floating
diffusion regions 103, 701 arranged in the vertical direction.
[0107] Moreover, as illustrated in FIG. 8, the connecting unit 109
connects the plurality of floating diffusion regions 103 arranged
in the horizontal direction.
[0108] Moreover, as illustrated in FIG. 9, the connecting unit 109
connects the plurality of floating diffusion regions 103 arranged
in the vertical direction and the horizontal direction.
[0109] Moreover, the signal based on the electric charge from one
pixel is read out by at least two of the amplifiers 104
corresponding to the plurality of floating diffusion regions 103,
701 connected by the connecting unit 109, 702.
[0110] Moreover, the connecting unit 109, 702 sets a non-connecting
state to amplify by the amplifier 104 in a first mode, and the
connecting unit 109, 702 sets a connecting state to amplify by the
amplifier 104 in a second mode.
[0111] Moreover, the connecting unit 109, 702 sets a connecting
state to conduct a low sensitivity reading out, and the connecting
unit 109, 702 sets a non-connecting state to conduct a high
sensitivity reading out.
[0112] Moreover, the electric charges from the plurality of
photoelectric conversion elements 101, 401 are added in the
plurality of floating diffusion regions 103, 701 connected by the
connecting unit 109, 702.
[0113] Moreover, a plurality of the connecting units 109, 702 are
included, one or more of the plurality of connecting units 109, 702
set the connecting state, and the other of the connecting units
109, 702 set the non-connecting state, to add the electric charges
from the plurality of photoelectric conversion elements 101,
401.
[0114] Moreover, the plurality of connecting units 109, 702 change
the connecting state, to change a number of the photoelectric
conversion elements 101, 401 to be subjected to the addition of the
electric charges.
[0115] Moreover, the electric charge from the photoelectric
conversion element 101, 401 is read out not by the amplifier 104
connected to the floating diffusion region 103, 701 connected
through the transfer transistor 102, 402, but by the other
amplifier 104. In other words, the electric charge from the
photoelectric conversion element 101, 401 is read out by the
amplifier 104 connected to the floating diffusion region 103, 701
connected through the connecting unit 109, 702.
[0116] According to the first to ninth embodiments, if the image of
the high-luminance subject is taken, the connecting unit sets the
connecting state to increase a capacitor of the floating diffusion
region. Thereby, the voltage generated on the floating diffusion
region can be suppressed. As a result thereof, the saturation of
the output voltage of the amplifier can be suppressed, and the
dynamic range can be enlarged.
[0117] Moreover, if an image of a low-luminance subject is taken,
the connecting unit sets the non-connecting state to separate the
floating diffusion region. Thereby, the capacitor of the floating
diffusion region is reduced. Thus, the voltage generated on the
floating diffusion region increases, and the good SN ratio can be
obtained.
[0118] It should be noted that all the above described embodiments
have only shown examples of embodiments for practicing the present
invention, and the technical scope of the present invention must
not be construed to be limited thereby. In other words, the present
invention can be practiced in various forms without deviating from
the technical idea or the main characteristics thereof.
[0119] While the present invention has been described with
reference to exemplary embodiments, it is to be understood that the
invention is not limited to the disclosed exemplary embodiments.
The scope of the following claims is to be accorded the broadest
interpretation so as to encompass all such modifications and
equivalent structures and functions.
[0120] This application claims the benefit of Japanese Patent
Application No. 2009-011344, filed Jan. 21, 2009, which is hereby
incorporated by reference herein in its entirety.
* * * * *