U.S. patent application number 13/769893 was filed with the patent office on 2013-06-20 for semiconductor device and manufacturing method of the same.
This patent application is currently assigned to Semiconductor Energy Laboratory Co., Ltd.. The applicant listed for this patent is Semiconductor Energy Laboratory Co., Ltd.. Invention is credited to Hajime KIMURA.
Application Number | 20130157393 13/769893 |
Document ID | / |
Family ID | 41315298 |
Filed Date | 2013-06-20 |
United States Patent
Application |
20130157393 |
Kind Code |
A1 |
KIMURA; Hajime |
June 20, 2013 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Abstract
An object is to provide a semiconductor device with high
aperture ratio or a manufacturing method thereof. Another object is
to provide semiconductor device with low power consumption or a
manufacturing method thereof. A light-transmitting conductive layer
which functions as a gate electrode, a gate insulating film formed
over the light-transmitting conductive layer, a semiconductor layer
formed over the light-transmitting conductive layer which functions
as the gate electrode with the gate insulating film interposed
therebetween, and a light-transmitting conductive layer which is
electrically connected to the semiconductor layer and functions as
source and drain electrodes are included.
Inventors: |
KIMURA; Hajime; (Atsugi,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Semiconductor Energy Laboratory Co., Ltd.; |
Atsugui-shi |
|
JP |
|
|
Assignee: |
Semiconductor Energy Laboratory
Co., Ltd.
Atsugui-shi
JP
|
Family ID: |
41315298 |
Appl. No.: |
13/769893 |
Filed: |
February 19, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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12434948 |
May 4, 2009 |
|
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|
13769893 |
|
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Current U.S.
Class: |
438/23 |
Current CPC
Class: |
H01L 29/7869 20130101;
H01L 27/1255 20130101; H01L 28/40 20130101; H01L 29/4966 20130101;
H01L 27/3265 20130101; H01L 33/02 20130101; H01L 27/124 20130101;
H01L 27/1225 20130101; H01L 27/3262 20130101; H01L 27/1288
20130101; H01L 2924/0002 20130101; H01L 2924/0002 20130101; H01L
2924/00 20130101 |
Class at
Publication: |
438/23 |
International
Class: |
H01L 33/02 20060101
H01L033/02 |
Foreign Application Data
Date |
Code |
Application Number |
May 16, 2008 |
JP |
2008-130162 |
Claims
1. A method for manufacturing an electronic device comprising: a
transistor including a first insulating film and a first
semiconductor region; and a capacitor including a first conductive
layer, the first insulating film and a second semiconductor region;
the method comprising: forming a first conductive film; forming a
gate electrode and the first conductive layer by using the first
conductive film; forming the first insulating film over at least
the gate electrode and the first conductive layer; forming a
semiconductor film over the first insulating film, forming the
first semiconductor region and the second semiconductor region by
using the semiconductor film; forming a second insulating film over
at least the first insulating film, the first semiconductor region
and the second semiconductor region; forming a channel protecting
layer by using the second insulating film; forming a second
conductive film over at least the channel protecting layer, the
first semiconductor region and the second semiconductor region;
forming a source electrode over at least the first semiconductor
region, a drain electrode over at least the first semiconductor
region and a second conductive layer over at least the second
semiconductor region; forming a third insulating film over at least
the source electrode, the drain electrode and the second conductive
layer; forming a contact hole in the third insulating film; and
forming a third conductive film over at least the third insulating
film, the third conductive film being electrically connected to one
of the source electrode and the drain electrode by the contact
hole.
2. The method according to claim 1, wherein the semiconductor film
is an oxide semiconductor film.
3. The method according to claim 2, wherein the semiconductor film
is any one of materials selected from zinc oxide, titanium oxide,
magnesium zinc oxide, cadmium zinc oxide, cadmium oxide,
InGaO.sub.3(ZnO).sub.5, and a-IGZO.
4. The method according to claim 1, wherein the channel protecting
layer overlaps with the gate electrode.
5. The method according to claim 1, wherein the electronic device
further comprising a light emitting element including a first
electrode, a light emitting layer and a second electrode.
6. The method according to claim 5, further comprising: forming the
first electrode by using the third conductive film; forming a
fourth insulating film over at least the first electrode and the
third insulating film; forming an opening portion in the fourth
insulating film; forming the light emitting layer over at least the
first electrode and the fourth insulating film, the light emitting
layer being electrically connected to the first electrode by the
opening portion; and forming the second electrode over the light
emitting layer.
7. A method for manufacturing an electronic device comprising: a
transistor including a first insulating film and a first
semiconductor region; and a capacitor including a first conductive
layer and the first insulating film; the method comprising: forming
a first conductive film; forming a gate electrode and the first
conductive layer by using the first conductive film; forming the
first insulating film at least over the gate electrode and the
first conductive layer; forming a semiconductor film over the first
insulating film, forming the first semiconductor region by using
the semiconductor film; forming a second insulating film over at
least the first insulating film and the first semiconductor region;
forming a channel protecting layer by using the second insulating
film; forming a second conductive film over at least the channel
protecting layer and the first semiconductor region; forming a
source electrode over at least the first semiconductor region, a
drain electrode over at least the first semiconductor region and a
second conductive layer over at least the first conductive layer;
forming a third insulating film over at least the source electrode,
the drain electrode and the second conductive layer; forming a
contact hole in the third insulating film; and forming a third
conductive film over at least the third insulating film, the third
conductive film being electrically connected to one of the source
electrode and the drain electrode by the contact hole.
8. The method according to claim 7, wherein the capacitor further
including a second semiconductor region.
9. The method according to claim 7, wherein the semiconductor film
is an oxide semiconductor film.
10. The method according to claim 9, wherein the semiconductor film
is any one of materials selected from zinc oxide, titanium oxide,
magnesium zinc oxide, cadmium zinc oxide, cadmium oxide,
InGaO.sub.3(ZnO).sub.5, and a-IGZO.
11. The method according to claim 7, wherein the channel protecting
layer overlaps with the gate electrode.
12. The method according to claim 7, wherein the electronic device
further comprising a light emitting element including a first
electrode, a light emitting layer and a second electrode.
13. The method according to claim 12, further comprising: forming
the first electrode by using the third conductive film; forming a
fourth insulating film over at least the third insulating film;
forming an opening portion in the fourth insulating film; forming
the light emitting layer over at least the first electrode and the
fourth insulating film, the light emitting layer being electrically
connected to the first electrode by the opening portion; and
forming the second electrode over the light emitting layer.
14. A method for manufacturing an electronic device comprising: a
transistor including a first insulating film, a first semiconductor
region over the first insulating film and a channel protecting
layer over the first semiconductor region; and a capacitor
including a first conductive layer, the first insulating film over
the first insulating film and a second conductive layer over the
first insulating film; the method comprising: forming a first
conductive film; forming the first insulating film; forming a
semiconductor film, forming a second insulating film; forming a
second conductive film; forming a third insulating film; forming a
third conductive film, wherein a gate electrode and the first
conductive layer are formed by using the first conductive film,
wherein the first semiconductor region is formed by using the
semiconductor film, wherein the channel protecting layer is formed
by using the second insulating film, wherein a source electrode
over the first semiconductor region, a drain electrode over the
first semiconductor region and the second conductive layer over the
first conductive layer are formed by using the second conductive
film, wherein a contact hole is formed in the third insulating
film, and wherein the third conductive film is electrically
connected to one of the source electrode and the drain electrode by
the contact hole.
15. The method according to claim 14, wherein the capacitor further
including a second semiconductor region.
16. The method according to claim 14, wherein the semiconductor
film is an oxide semiconductor film.
17. The method according to claim 16, wherein the semiconductor
film is any one of materials selected from zinc oxide, titanium
oxide, magnesium zinc oxide, cadmium zinc oxide, cadmium oxide,
InGaO.sub.3(ZnO).sub.5, and a-IGZO.
18. The method according to claim 14, wherein the channel
protecting layer overlaps with the gate electrode.
19. The method according to claim 14, wherein the electronic device
further comprising a light emitting element including a first
electrode, a light emitting layer over the first electrode and a
second electrode over the light emitting layer.
20. The method according to claim 19, further comprising: forming a
fourth insulating film; forming the light emitting layer; forming
the second electrode, wherein the first electrode is formed by
using the third conductive film, wherein an opening portion is
formed in the fourth insulating film, and wherein the light
emitting layer is electrically connected to the first electrode by
the opening portion.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] This invention relates to a semiconductor device, a display
device, a producing method thereof, or a method using the
semiconductor device or the display device. In specific, this
invention relates to a semiconductor device and a display device
each including a light-transmitting semiconductor layer, a
producing method thereof, or a method using the semiconductor
device or the display device. Further in specific, this invention
relates to a liquid crystal display device including a
light-transmitting semiconductor layer, a manufacturing method
thereof, or a method the liquid crystal display device.
[0003] 2. Description of the Related Art
[0004] In recent years, flat panel displays such as liquid crystal
displays (LCDs) are becoming widespread. In specific, active-matrix
LCDs provided with a transistor in each pixel are often used. As
the transistor, the one which employs amorphous (non-crystalline)
silicon or poly (polycrystalline) silicon for a semiconductor layer
is widely used.
[0005] However, instead of the transistors formed using such
silicon materials, transistors including light-transmitting
semiconductor layers are considered. Further, a technique which
increases an aperture ratio by employing light-transmitting
electrodes as gate electrodes and source and drain electrodes is
considered (see Reference 1 and Reference 2). [0006] Reference 1:
Japanese Published Patent Application No. 2007-123700 [0007]
Reference 2: Japanese Published Patent Application No.
2007-81362
[0008] In general, a wiring for connecting elements such as
transistors to each other is formed by extending conductive layers
for forming a gate electrode and source and drain electrodes,
whereby the wiring is formed in the same island as the conductive
layers. Accordingly, a wiring for connecting gate of a transistor
to gate of another transistor (such a wiring is called a gate
wiring) is formed using the same layer structure and material as a
gate electrode of the transistor; and a wiring for connecting
source of the transistor to source of another transistor (such a
wiring is called a source wiring) is formed using the same layer
structure and material as a source electrode of the transistor, in
many cases. Therefore, in the case where the gate electrode and the
source and drain electrodes are formed using a light-transmitting
material, the gate wiring and the source wiring are also formed
using the light-transmitting material in many cases, like the gate
electrode and the source and drain electrodes.
[0009] However, in general, as compared to a conductive material
having light-shielding property and a reflecting property, such as
aluminum (Al), molybdenum (Mo), titanium (Ti), tungsten (W),
neodymium (Nd), Copper (Cu), or silver (Ag), a light-transmitting
conductive material such as indium tin oxide (ITO), indium zinc
oxide (IZO), or indium tin zinc oxide (ITZO) has low conductivity.
Accordingly, if a wiring is formed using a light-transmitting
conductive material, wiring resistance becomes high. For example,
in the case where a large display device is manufactured, wiring
resistance becomes very high because a wiring is long. As wiring
resistance increases, the waveform of a signal which is transmitted
through the wiring becomes distorted, resulting in a low voltage
supply due to a voltage drop through the wiring resistance.
Therefore, it is difficult to supply normal voltage and current,
whereby normal display and operation become difficult.
[0010] On the other hand, in the case where a gate wiring and a
source wiring are formed using a light-shielding conductive
material by using the light-shielding conductive material for the
gate electrode and the source and drain electrodes, distortion of
the waveform of the signal can be suppressed due to an increase in
the conductivity of the wiring. However, since a light-shielding
material is used for the gate electrode and the source and drain
electrodes, aperture ratio decreases and power consumption becomes
high.
[0011] In addition, in terms of display performance, high storage
capacitance and higher aperture ratio are demanded for pixels.
Pixels each having high aperture ratio increase the use efficiency
of light, so that power saving and miniaturization of a display
device can be achieved. In recent years, the size of pixels has
been miniaturized and images with higher definition are demanded.
The miniaturization of the size of the pixel causes a decrease in
the aperture ratio of the pixel because of large formation area for
transistors and wirings which occupies one pixel. Accordingly, in
order to obtain a high aperture ratio in each pixel in a regulation
size, the circuit configuration of the pixel needs to have an
efficient layout of necessary components.
[0012] In view of the foregoing problems, one object of an
embodiment in this invention is to provide a semiconductor device
with high aperture ratio and a manufacturing method thereof. In
addition, one object of one embodiment in this invention is to
provide a semiconductor device with low power consumption and a
manufacturing method thereof.
[0013] In order to solve the above problem, one embodiment of this
invention is a semiconductor device which includes a gate wiring
including a gate electrode, in which a first conductive film and a
second conductive film are stacked in this order, a gate insulating
film covering the gate electrode and the gate wiring, an
island-shaped semiconductor film provided over the gate electrode
with the gate insulating film interposed therebetween, a source
wiring including a source electrode, in which a third conductive
film and a fourth conductive film are stacked in this order, an
interlayer insulating film covering the island-shaped semiconductor
film and the source wiring including the source electrode, a pixel
electrode provided over the interlayer insulating film and
electrically connected to the island-shaped semiconductor film, and
a capacitor wiring. The gate electrode is formed of the first
conductive film. The gate wiring is formed of the first conductive
film and the second conductive film. The source electrode is formed
of the third conductive film. The source wiring is formed of the
third conductive film and the fourth conductive film.
[0014] Further, one embodiment in this invention is a semiconductor
device which includes a plurality of gate wirings formed by being
extended in a first direction, a plurality of source wirings
extended in a second direction which intersects with the gate
wirings, a plurality of pixel portions defined by the gate wiring
and the source wiring, a gate electrode formed in each of the pixel
portions and extended from the gate wiring, and a switching element
including a source electrode extended from the source wiring. The
gate wiring is formed of a first conductive film and a second
conductive film thereover. The source wiring is formed of a third
conductive film and a fourth conductive film thereover. The gate
electrode is formed of the first conductive film. The source
electrode is formed of the third conductive film.
[0015] Further, in one embodiment of this invention, the first
conductive film and the third conductive film preferably have a
light-transmitting property. Furthermore, in one embodiment of this
invention, the second conductive film and the fourth conductive
film preferably have a light-shielding property. Furthermore, in
one embodiment of this invention, the second conductive film and
the fourth conductive film have higher conductivity than the first
conductive film and the third conductive film.
[0016] Further, in one embodiment of this invention, the second
conductive film is formed of one or a plurality of elements
selected from Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, and Co.
Furthermore, in one embodiment of this invention, the fourth
conductive film is formed of one or a plurality of elements
selected from Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, and Co.
[0017] By employing such a structure, a light-transmitting
transistor or a light-transmitting capacitor element can be formed.
Therefore, even though the transistor or the capacitor element is
provided in a pixel, a decrease in an aperture ratio can be
suppressed. Further, since a wiring for connecting the transistor
and an element (e.g., another transistor) or a wiring for
connecting the capacitor element and an element (e.g., another
capacitor element) is formed by using a material with low
resistivity and high conductivity, the blunting of the waveform of
a signal and a voltage drop due to wiring resistance can be
suppressed.
[0018] Further, one embodiment of this invention is a semiconductor
device in which the semiconductor film is any one of zinc oxide,
titanium oxide, magnesium zinc oxide, cadmium zinc oxide, cadmium
oxide, InGaO.sub.3(ZnO).sub.s, and an In--Ga--Zn--O based amorphous
oxide semiconductor.
[0019] Further, one embodiment of this invention is a manufacturing
method of a semiconductor device, in which a first conductive film
and a second conductive film are sequentially formed over a
light-transmitting insulating substrate, a first resist mask having
a portion where a stacked layer of the first conductive film and
the second conductive film remain and a portion where only the
first conductive film remains, whose thicknesses are different from
each other is formed by photolithography with a multi-tone mask,
the first conductive film and the second conductive film are etched
by using the first resist mask, a second resist mask is formed by
ashing the first resist mask, the second conductive film is etched
by using the second resist mask and part of the first conductive
film is exposed, a first insulating film is formed so as to cover
the insulating substrate, the first conductive film, and the second
conductive film, an island-shaped semiconductor film is formed over
the first conductive film with the first insulating film interposed
therebetween, a third conductive film and a fourth conductive film
are sequentially formed over the insulating film, a third resist
mask having a portion where a stacked layer of the third conductive
film and the fourth conductive film remain and a portion where only
the first conductive film remains, whose thicknesses are different
from each other is formed by photolithography with a multi-tone
mask, the third conductive film and the fourth conductive film are
etched by using the third resist mask, a fourth resist mask is
formed by ashing the third resist mask, and the fourth conductive
film is formed by using the fourth resist mask and part of the
third conductive film is exposed.
[0020] Further in the conductive layers, a light-transmitting
region (a region with high light transmittance) and a
light-shielding region (a region with low light transmittance) can
be formed by one mask (reticle) with use of a multi-tone mask.
Accordingly, the light-transmitting region (the region with high
light transmittance) and the light-shielding region (the region
with low light transmittance) can be formed without increasing the
number of masks.
[0021] Note that semiconductor devices in this specification mean
all devices which can function by utilizing semiconductor
characteristics, and display devices, semiconductor circuits, and
electronic devices are all semiconductor devices.
[0022] According to one embodiment of this invention, the
light-transmitting transistor or the light-transmitting capacitor
element can be formed. Therefore, even if the transistor or the
capacitor is provided in a pixel, aperture ratio can be made high.
Further, since a wiring for connecting the transistor and an
element (e.g., another transistor) or a wiring for connecting a
capacitor element and an element (e.g., another capacitor element)
can be formed by using a material with low resistivity and high
conductivity, the distortion of the waveform of a signal and a
voltage drop due to wiring resistance can be reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In the accompanying drawings:
[0024] FIG. 1A is a top view of a semiconductor device according to
one embodiment of this invention and FIG. 1B is a cross-sectional
view of the semiconductor device of one embodiment in this
invention;
[0025] FIGS. 2A to 2D are cross-sectional views illustrating a
manufacturing method of a semiconductor device of one embodiment in
this invention;
[0026] FIGS. 3A to 3D are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0027] FIGS. 4A to 4D are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0028] FIGS. 5A to 5D are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0029] FIGS. 6A to 6C are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0030] FIGS. 7A to 7C are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0031] FIGS. 8A to 8D are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0032] FIGS. 9A to 9D are cross-sectional views illustrating the
manufacturing method of the semiconductor device of one embodiment
in this invention;
[0033] FIG. 10A is a top view of a semiconductor device of one
embodiment in this invention and FIG. 10B is a cross-sectional view
of the semiconductor device of one embodiment in this
invention;
[0034] FIG. 11A is a top view of a semiconductor device of one
embodiment in this invention and FIG. 11B is a cross-sectional view
of the semiconductor device of one embodiment in this
invention;
[0035] FIG. 12A is a top view of a semiconductor device of one
embodiment in this invention and FIG. 12B is a cross-sectional view
of the semiconductor device of one embodiment in this
invention;
[0036] FIGS. 13A-1, 13A-2, 13B-1, and 13B-2 are diagrams for
illustrating a multi-tone mask which can be applied to one
embodiment in this invention;
[0037] FIG. 14A is a top view of a display device of one embodiment
in this invention and FIG. 14B is a cross-sectional view of the
display device of one embodiment in this invention;
[0038] FIGS. 15A to 15C are diagrams each illustrating an
electronic device which employs a display device of one embodiment
in this invention;
[0039] FIG. 16A to 16C are diagrams illustrating an electronic
device which employs a display device of one embodiment in this
invention;
[0040] FIG. 17A is a top view of a semiconductor device of one
embodiment in this invention and FIG. 17B is a cross-sectional view
of the semiconductor device of one embodiment in this
invention;
[0041] FIG. 18A is a top view of a display device of one embodiment
in this invention and FIG. 18B is a cross-sectional view of the
display device of one embodiment in this invention; and
[0042] FIG. 19 is a cross-sectional view of a semiconductor device
of one embodiment in this invention.
DETAILED DESCRIPTION OF THE INVENTION
[0043] Hereinafter, embodiments of this invention will be described
with reference to drawings. However, this invention can be
implemented in various forms and it is easily understood by those
skilled in the art that embodiments and details disclosed herein
can be variously changed without departing from the spirits and
scope of this invention. Accordingly, this invention is not
construed as being limited to the description of the following
embodiments. Note that the same reference numeral is commonly used
to denote the same component among the different drawings in the
structure of this invention described below. Thus, detailed
description of the same portions or portions having a similar
function are omitted.
Embodiment 1
[0044] FIG. 1A is a top view illustrating one example of a
semiconductor device of this embodiment and FIG. 1B is a
cross-sectional view of FIG. 1A along line A-B.
[0045] As shown in FIG. 1A, an element substrate includes a pixel
portion which has a gate wiring and a storage capacitor line
provided in direction 1, a source wiring provided in direction 2
which intersects with the gate wiring and the storage capacitor
line, and a transistor around a portion where the gate wiring and
the source wiring intersect with each other.
[0046] In order to increase the aperture ratio of a pixel, a
transistor of this embodiment includes a light-transmitting
conductive layer which functions as a gate electrode, a gate
insulating film formed over the light-transmitting conductive
layer, a semiconductor layer formed over the light-transmitting
conductive layer which functions as the gate electrode with the
gate insulating film interposed therebetween, and
light-transmitting conductive layers which function as source and
drain electrodes electrically connected to the semiconductor
layer.
[0047] In this manner, by forming the semiconductor layer and the
electrode of the transistor by using a light-transmitting
substance, the aperture ratio of the pixel can be increased.
However, when the gate wiring electrically connected to the gate
electrode and the source wiring electrically connected to the
source and drain electrodes are formed by using a
light-transmitting substance, wiring resistance increases, thereby
causes an increase in power consumption. Therefore, the gate wiring
and the source wiring are formed with a layered structure in which
a light-transmitting conductive layer and a light-shielding
conductive layer are stacked in this order. As the transistor,
either one of a top-gate type and a bottom-gate type can be
used.
[0048] The gate wiring electrically connected to the gate electrode
of the transistor is formed by stacking a light-transmitting
conductive layer 107a and a light-shielding conductive layer 110a
in this order, and the source wiring electrically connected to the
source or drain electrode of the transistor is formed by staking a
light-transmitting conductive layer 119a and a light-shielding
layer 122 in this order. In other words, the gate electrode of the
transistor is formed using part of the light-transmitting
conductive layer 107a which is included in the gate wiring, and the
source and drain electrodes are formed using part of the
light-transmitting conductive layer 119a which is included in the
source wiring.
[0049] By stacking the light-transmitting conductive layer and the
light-shielding conductive layer in this order to form the gate
wiring and the source wiring, wiring resistance and power
consumption can be reduced. In addition, since the gate wiring and
the source wiring are each formed using the light-shielding
conductive layer, a space between pixels can be shielded from
light. That is, with the gate wiring provided in a row direction
and the source wiring provided in column direction, the space
between the pixels can be shielded from light without using a black
matrix.
[0050] In the case where the transistor is formed over the gate
wiring, the size of the transistor depends on the width of the gate
wiring of the transistor. However, in this embodiment, since the
transistor is formed in a pixel, the size of the transistor can be
large. As shown in FIGS. 17A and 17B, the transistor which is
larger than the width of the gate wiring can be formed. By forming
a large transistor, its electric performance can be adequately
high, and a writing time of a signal to the pixel can be shortened.
Accordingly, a display device with high definition can be
provided.
[0051] In addition, the storage capacitor line provided in the
direction 1 which is the same as that of the gate wiring is formed
by stacking a light-transmitting conductive layer and a
light-shielding conductive layer in this order like the gate
wiring. A storage capacitor portion is formed in the storage
capacitor line. The storage capacitor portion includes a
light-transmitting conductive layer which functions as a lower
electrode and a light-transmitting conductive layer which functions
as an upper electrode, by using an insulating film serving as a
gate insulating film as a dielectrics.
[0052] In this manner, by forming the storage capacitor portion
with the light-transmitting conductive layer, aperture ratio can be
increased. In addition, by forming the storage capacitor portion
with the light-transmitting conductive layer, the storage capacitor
portion can be large, so that the potential of a pixel electrode
can be easily held even when the transistor is turned off.
Moreover, feedthrough potential can be low.
[0053] Moreover, the number of masks necessary for forming an
element substrate having the pixel configuration shown in FIGS. 1A
and 1B can be 5. That is, a first mask is used for forming the gate
wiring and the capacitor wiring, a second mask is for forming a
semiconductor layer 113, a third mask is for forming the source
wiring and the upper electrode of the storage capacitor portion, a
fourth mask is for forming contact holes which reach the source
wiring and the upper electrode of the storage capacitor portion and
a fifth mask is for forming a pixel electrode 124.
[0054] In this manner, in the case of the pixel configuration shown
in FIGS. 1A and 1B, a display device with high aperture ratio can
be achieved with the small number of masks.
[0055] Next, one example of a manufacturing process of a
semiconductor device of this embodiment is shown with reference to
cross-sectional views in FIGS. 2A to 2D, FIGS. 3A to 3D, FIGS. 4A
to 4D, FIGS. 5A to 5D, FIGS. 6A to 6C, FIGS. 7A to 7C, FIGS. 8A to
8D, and FIGS. 9A to 9D. Although a case where a multi-tone mask is
used is described with reference to FIGS. 2A to 2D, FIGS. 3A to 3D,
FIGS. 4A to 4D, FIGS. 5A to 5D, FIGS. 6A to 6C, FIGS. 7A to 7C,
FIGS. 8A to 8D, and FIGS. 9A to 9D, this embodiment is not limited
thereto. Note that FIGS. 2A to 2D, FIGS. 4A to 4D, FIGS. 6A to 6C,
and FIGS. 8A to 8D are cross-sectional views of FIG. 1A along line
A-C, and FIGS. 3A to 3D, FIGS. 5A to 5D, FIGS. 7A to 7C, and FIGS.
9A to 9D are cross-sectional views of FIG. 1A along line D-E. FIGS.
2A to 2D, FIGS. 4A to 4D, FIGS. 6A to 6C, and FIGS. 8A to 8D
correspond to FIGS. 3A to 3D, FIGS. 5A to 5D, FIGS. 7A to 7C, and
FIGS. 9A to 9D, respectively. Note that FIGS. 2A to 2D, FIGS. 4A to
4D, and FIGS. 6A to 6C illustrate a source wiring portion 301, a
transistor portion 302, a gate wiring portion 303, and a storage
capacitor portion 304, and FIGS. 3A to 3D. FIGS. 5A to 5D, FIGS. 7A
to 7C illustrate the transistor portion 302 and the gate wiring
portion 303.
[0056] First, as shown in FIG. 2A and FIG. 3A, a conductive film
102 and a conductive film 103 are stacked over a substrate 101 by
sputtering. These steps are consecutively performed, and further
sputtering can be consecutively performed by using a multi-chamber.
By consecutively forming the conductive film 102 and the conductive
film 103, throughput is increased and contamination by an impurity
or dust can be suppressed.
[0057] The substrate 101 is preferably formed using a material
having high light transmittance. For example, a glass substrate, a
plastic substrate, an acrylic substrate, a ceramic substrate, or
the like can be used.
[0058] It is preferable that the light transmittance of the
conductive film 102 be sufficiently high. Moreover, the light
transmittance of the conductive film 102 is preferably higher than
that of the conductive film 103.
[0059] As the conductive film 102, indium tin oxide (ITO), indium
tin oxide containing silicon oxide (ITSO), organic indium, organic
tin, zinc oxide, titanium nitride, or the like can be used.
Alternatively, indium zinc oxide (IZO) containing zinc oxide (ZnO),
zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide
(SnO.sub.2), indium oxide containing tungsten oxide, indium zinc
oxide containing tungsten oxide, indium oxide containing titanium
oxide, indium tin oxide containing titanium oxide, or the like may
be used. Such a material can be used to form the conductive film
102 with a single-layer structure or a layered structure by
sputtering. However, in the case of the layered structure, the
light transmittance of each of a plurality of films is preferably
high enough.
[0060] The resistivity of the conductive film 103 is preferably low
enough and the conductivity of the conductive film 103 is
preferably high enough. In addition, the resistivity of the
conductive film 102 is preferably lower than that of the conductive
film 103. However, since the conductive film 102 functions as a
conductive layer, the resistivity of the conductive film 102 is
preferably lower than that of an insulating layer.
[0061] The conductive film 103 can be formed to have a single-layer
structure or a layered structure using a metal material such as
molybdenum, titanium, chromium, tantalum, tungsten, aluminum,
copper, neodymium, or scandium, or an alloy material containing the
above material as its main component, by sputtering or vacuum
evaporation. In addition, in the case where the conductive film 103
is formed to have a layered structure, a light-transmitting
conductive film may be included in the plurality of films.
[0062] Note that when the conductive film 103 is formed over the
conductive film 102, both of the films react with each other in
some cases. For example, when the top surface (a surface which is
in contact with the conductive film 103) of the conductive film 102
is formed using ITO and the bottom surface (a surface which is in
contact with the conductive film 102) of the conductive film 103 is
formed using aluminum, a chemical reaction occurs therebetween.
Accordingly, in order to avoid the chemical reaction, a material
with a high melting point is preferably used for the bottom surface
(the surface which is in contact with the conductive film 102) of
the conductive film 103. For example, as the material with a high
melting point, molybdenum (Mo), titanium (Ti), tungsten (W),
neodymium (Nd), or the like can be given. Also, it is preferable to
form the conductive film 103 into a multi-layer film by using a
material with high conductivity over a film formed using the
material with the high melting point. As the material with high
conductivity, aluminum (Al), copper (Cu), silver (Ag), or the like
can be given. For example, in the case where the conductive film
103 is formed to have a layered structure, a stacked layer of
molybdenum (Mo) as a first layer, aluminum (Al) as a second layer,
and molybdenum (Mo) as a third layer, or a stacked layer of
molybdenum (Mo) as a first layer, aluminum (Al) containing a small
amount of neodymium (Nd) as a second layer, and molybdenum (Mo) as
a third layer can be used.
[0063] Since the conductive film 102 is formed under the conductive
film 103 in the structure of this embodiment, only the conductive
film 103 can be formed using commercial glass provided with ITO
(indium tin oxide) by sputtering.
[0064] Although not shown, note that silicon oxide, silicon
nitride, silicon oxynitride, or the like can be formed as a base
film between the substrate 101 and the conductive film 102. By
forming the base film between the substrate 101 and the
light-transmitting conductive film, diffusing of mobile ions,
impurities, or the like from the substrate 101 into an element can
be suppressed, whereby the deterioration in the characteristic of
the element can be prevented.
[0065] Next, as shown in FIG. 2B and FIG. 3B, resist masks 106a and
106b are formed over the conductive film 103. The resist masks 106a
and 106b can be formed to have regions with different thicknesses
by using a multi-tone mask. By using the multi-tone mask, the
number of photomasks used and the number of manufacturing steps can
be reduced, which is preferable. In this embodiment, a multi-tone
mask can be used in a step for forming the pattern of the
conductive film 102 and the conductive film 103 and a step for
forming the light-transmitting conductive layer which functions as
the gate electrode.
[0066] The multi-tone mask is a mask with which exposure can be
performed with the amount of light in a plurality of levels.
Typically, exposure is performed with the amount of light in three
levels: an exposure region, a half-exposure region, and a
non-exposure region. By using the multi-tone mask, a resist mask
with a plurality of thicknesses (typically two thicknesses) can be
formed through one exposure step and one development step. Thus,
the number of photomasks can be reduced by using the multi-tone
mask.
[0067] FIGS. 13A-1 and 13B-1 are cross-sectional views of typical
multi-tone masks. FIG. 13A-1 shows a gray-tone mask 180 and FIG.
13B-1 shows a half-tone mask 185.
[0068] The gray-tone mask 180 shown in FIG. 13A-1 includes a
light-shielding portion 182 formed using a light-shielding layer on
a light-transmitting substrate 181 and a diffraction grating
portion 183 formed by the pattern of the light-shielding layer.
[0069] The diffraction grating portion 183 controls the amount of
transmitted light by using slits, dots, meshes, or the like
provided in intervals which are equal to or smaller than the limit
of the resolution of light used for exposure. Note that the slits,
dots, or meshes may be provided in the diffraction grating portion
183 in periodic intervals or non-periodic intervals.
[0070] As the light-transmitting substrate 181, quartz or the like
can be used. The light-shielding layer included in the
light-shielding portion 182 and the diffraction grating portion 183
may be formed using a metal film: preferably chromium, chromium
oxide, or the like.
[0071] When the gray-tone mask 180 is irradiated with light for
exposure, the transmittance of a region which overlaps with the
light-shielding portion 182 is 0% as shown in FIG. 13A-2 and the
transmittance of a region which is not provided with the
light-shielding portion 182 or the diffraction grating portion 183
is 100%. In addition, the transmittance of the diffraction grating
portion 183 is approximately 10 to 70% and can be adjusted by
intervals between slits, dots or meshes in the diffraction grating,
or the like.
[0072] The half-tone mask 185 shown in FIG. 13B-1 includes a
semi-light-transmitting portion 187 and a light-shielding portion
188 which are formed using a semi-light-transmitting layer and a
light-shielding layer, respectively, over a light-transmitting
substrate 186.
[0073] The semi-light-transmitting portion 187 can be formed by
using a layer of MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like. The
light-shielding portion 188 may be provided by using the same metal
film as the light-shielding layer for the gray-tone mask,
preferably, such as chromium or chromium oxide.
[0074] When the half-tone mask 185 is irradiated with light for
exposure, the transmittance of a region which overlaps with the
light-shielding portion 188 is 0% as shown in FIG. 13B-2 and the
transmittance of a region which is not provided with the
light-shielding portion 188 or the semi-light-transmitting portion
187 is 100%. In addition, the transmittance of the
semi-light-transmitting portion 187 is approximately 10 to 70% and
can be adjusted by the kind of material used or the thickness of a
film to be formed, or the like.
[0075] By performing exposure and development with the use of the
multi-tone mask, the resist mask having the regions with different
thicknesses can be formed. In addition, the resist mask with
different thicknesses can be formed.
[0076] As shown in FIG. 2B and FIG. 3B, a half-tone mask includes
semi-light-transmitting layers 105a and 105c and a light-shielding
layer 105b on a light-transmitting substrate 104. Accordingly, a
portion which is to be the bottom electrode of the storage
capacitor portion and a portion which is to be the gate electrode
are provided with a region with a small thickness of the resist
mask 106a and the thin resist mask 106b, and a portion which is to
be the gate wiring is provided with a region with a large thickness
of the resist mask 106a over the conductive film 103.
[0077] Next, as shown in FIG. 2C and FIG. 3C, the conductive films
102 and 103 are etched by using the resist masks 106a and 106b. By
the etching, conductive layers 107a, 108a, 107b, and 108b can be
formed.
[0078] Next, as shown in FIG. 2D, and FIG. 3D, the resist masks
106a and 106b are ashed by an oxygen plasma. By ashing the resist
masks 106a and 106b by the oxygen plasma, the region with the small
thickness of the resist mask 106a is removed and the
light-shielding conductive layer under the resist mask 106a is
exposed. In addition, the region with a large thickness of resist
mask 106a becomes small and remains as a resist mask 109. In this
manner, by using the resist mask formed using the multi-tone mask,
a resist mask is not additionally used, so that steps can be
simplified.
[0079] Next, the light-shielding conductive layer 108a is etched by
using the resist mask 109. As a result, part of the conductive
layer 108a is removed and the conductive layer 107a is exposed. In
addition, the conductive layer 108a except a portion on which the
resist mask 109 is formed is removed. This is because the part of
the conductive layer 108a is exposed due to the reduction of the
resist mask 106a in size by the ashing treatment. Accordingly, the
part of the conductive layer 108a, which is not covered with the
resist mask 109 is etched at the same time. Thus, the areas of the
conductive layer 108a and the conductive layer 107a are largely
different from each other. In other words, the area of the
conductive layer 107a is larger than that of the conductive layer
108a. Alternatively, the conductive layers 108a and 107a include a
region in which the conductive layers 108a and 107a overlap with
each other, and a region in which the conductive layers 108a and
107a do not overlap with each other.
[0080] When the light-shielding conductive layer is removed, part
of the light-transmitting conductive layer (for example, a surface
portion which is in contact with the light-shielding conductive
layer) is also removed in some cases. The selectivity of the
light-shielding conductive layer to the light-transmitting
conductive layer in etching determines how much the
light-transmitting conductive layer is removed. Therefore, for
example, the thickness of the conductive layer 107a in a region
covered with the conductive layer 110a is larger than that of the
conductive layer 107a in a region which is not covered with the
conductive layer 110a in many cases.
[0081] In the case where only the light-shielding conductive layer
is removed by wet etching while the light-transmitting conductive
layer is left, an etching solution with high selectivity of the
light-shielding conductive layer to the light-transmitting
conductive layer is used. In the case where a stacked layer of
molybdenum (Mo) as a first layer, aluminum (Al) as a second layer,
and molybdenum (Mo) as a third layer, or a stacked layer of
molybdenum (Mo) as a first layer, aluminum (Al) containing a small
amount of neodymium (Nd) as a second layer, and molybdenum (Mo) as
a third layer is used as the light-shielding conductive layer, for
example, a mixed acid of phosphoric acid, nitric acid, acetic acid,
and water can be used for the wet etching. With the use of this
mixed acid, a forward tapered shape which is uniform and favorable
can be obtained. In this manner, in addition to an improvement in
coverage due to a tapered shape, high throughput can be obtained
while the wet etching is a simple process in which an etching by an
etchant, a rinse by pure water, and drying are performed. Thus, wet
etching is suitable for etching of the above light-shielding
conductive layer.
[0082] Next, the resist mask 109 is removed as shown in FIG. 4A and
FIG. 5A.
[0083] Part of a region in the conductive layers 110a and 107a (a
region mainly including the conductive layer 110a) can function as
the gate wiring or part of the gate wiring while another part of
the region (a region mainly including only the conductive layer
107a) can function as the gate electrode or part of the gate
electrode of the transistor. It is preferable that a region in
which the conductive layers 110a and 107a over lap with each other
function as the gate wiring or the part of the gate wiring because
the region includes the conductive layer 110a which has high
conductivity in many cases. Alternatively, it is preferable that
the conductive layer 107a in the region which does not include the
conductive layer 110a function as the gate electrode or the part of
the gate electrode of the transistor because the region can
transmit light in some cases.
[0084] Accordingly, in the conductive layers 110a and 107a, a
wiring which functions as the gate electrode, may be considered to
be connected to a wiring which functions as the gate wiring (or at
least one of the conductive layers 110a and 107a which functions as
the gate wiring). Alternatively, at least one of the conductive
layers 110a and 107a included in the gate wiring may be formed to
have a larger area than the other layer included in the gate
wiring; part of the region with the larger area can be considered
to function as the gate electrode. Alternatively, the conductive
layer 107a may be formed to have a larger area than the conductive
layer 110a; part of the region with the larger area can be
considered to function as the gate electrode. That is, the part of
the gate wiring can be considered to function as the gate electrode
or the part of the gate electrode. Alternatively, the conductive
layer 110a that mainly functions as the gate wiring or the part of
the gate wiring can be considered to be formed over the conductive
layer 107a that mainly functions as the gate electrode or the part
of the gate electrode.
[0085] Similarly, part of a region in the light-shielding
conductive layer and the conductive layer 107b (a region mainly
including the conductive layer 110b) can function as the capacitor
wiring or part of the capacitor wiring, and another part of the
region (a region mainly including only the conductive layer 107b)
can function as an electrode of a capacitor element or part of the
electrode of the capacitor element. It is preferable that a region
in which the light-shielding conductive layer and the conductive
layer 107b overlap with each other function as the capacitor wiring
or the part of the capacitor wiring because the region includes the
light-shielding conductive layer which has high conductivity in
many cases. Alternatively, it is preferable that the conductive
layer 107b in the region which does not include the light-shielding
conductive layer function as the electrode of the capacitor element
or the part of the electrode of the capacitor element because the
region can transmit light in some cases.
[0086] Accordingly, in the light-shielding conductive layer and the
conductive layer 107b, a wiring which functions as the electrode of
the capacitor element, may be considered to be connected to a
wiring which functions as the capacitor element (or at least one of
the light-shielding conductive layer and the conductive layer 107b
which functions as the capacitor wiring). Alternatively, at least
one of the light-shielding conductive layer and the conductive
layer 107b included in the capacitor wiring may be formed to have a
larger area than the other layer included in the capacitor wiring;
part of the region with the larger area can be considered to
function as the electrode of the capacitor element. Alternatively,
the conductive layer 107b may be formed to have a larger area than
the light-shielding conductive layer; part of the region with the
larger area can be considered to function as the electrode of the
capacitor element. That is, the part of the capacitor wiring can be
considered to function as the electrode of the capacitor element or
the part of the electrode of the capacitor element. Alternatively,
the conductive layer 110b that mainly functions as the capacitor
wiring or the part of the capacitor wiring can be considered to be
formed over the conductive layer 107b that mainly functions as the
electrode of the capacitor element or the part of the electrode of
the capacitor element.
[0087] Next, as shown in FIG. 4B and FIG. 5B, an insulating film
111 which functions as a gate insulating film is formed so as to
cover the light-transmitting conductive layer and the
light-shielding conductive layer. After that, a semiconductor film
112 is formed over the insulating film 111.
[0088] The insulating film 111 may be formed to have a single-layer
structure or a layered structure including a plurality of films. In
the case of the layered structure including a plurality of films,
it is preferable that all of the films have sufficiently high
transmittance. Similarly, the semiconductor film 112 may be formed
to have a single-layer structure or a layered structure including a
plurality of films. In the case of the layered structure including
a plurality of films, it is preferable that all of the films have
sufficiently high transmittance.
[0089] The insulating film 111 which covers the light-transmitting
conductive layer and the light-shielding conductive layer is formed
to a thickness of 50 to 500 nm. The insulating film 111 may be
formed to have a single-layer structure of a film containing an
oxide of silicon or a nitride of silicon, or as a layered structure
thereof, by a sputtering method or a variety of CVD methods such as
a plasma CVD method. Specifically, a film containing silicon oxide
(SiOx), a film containing silicon oxynitride (SiOxNy), or a film
containing silicon nitride oxide (SiNxOy) is formed as a
single-layer structure, or these films are appropriately stacked to
form the insulating film 111.
[0090] The insulating film may be formed by oxidizing or nitriding
the surface of the light-transmitting conductive layer or the
light-shielding conductive layer through a high density plasma
treatment in an atmosphere containing oxygen, nitrogen, or oxygen
and nitrogen. The insulating film formed through a high density
plasma treatment has excellent uniformity in its film thickness,
film quality, and the like and the film can be formed to be dense.
As an atmosphere containing oxygen, a mixed gas of oxygen
(O.sub.2), nitrogen dioxide (NO.sub.2) or dinitrogen monoxide
(N.sub.2O), and a rare gas; or a mixed gas of oxygen (O.sub.2),
nitrogen dioxide (NO.sub.2) or dinitrogen monoxide (N.sub.2O), a
rare gas, and hydrogen (H.sub.2); can be used. As an atmosphere
containing nitrogen, a mixed gas of nitrogen (N.sub.2) or ammonia
(NH.sub.3) and a rare gas, or a mixed gas of nitrogen (N.sub.2) or
ammonia (NH.sub.3), a rare gas, and hydrogen (H.sub.2) can be used.
The surfaces of the light-transmitting conductive layer and the
light-shielding conductive layer can be oxidized or nitrided by
oxygen radicals (including OH radicals in some cases) or nitrogen
radicals (including NH radicals in some cases) generated by high
density plasma.
[0091] In the case where the insulating film 111 is formed by the
high density plasma treatment, the insulating film 111 is formed so
as to have a thickness of 1 to 20 nm, typically 5 to 10 nm, and
cover the light-transmitting conductive layer and the
light-shielding conductive layer. Since the reaction which occurs
in this case is a solid-phase reaction, an interface state density
between the insulating film 111 and the light-transmitting
conductive layer and the light-shielding conductive layer can be
extremely low. Since the light-transmitting conductive layer and
the light-shielding conductive layer are directly oxidized or
nitrided, the thickness of the formed insulating film 111 may be
uniform. Consequently, by solid-phase oxidation of the surface of
the electrode by the high density plasma treatment shown here, an
insulating film with favorable uniformity and low interface state
density can be formed. Here, an oxide of an element selected from
tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo),
chromium (Cr), niobium (Nb), or the like; or an oxide of an alloy
material or a compound material mainly containing the element
functions as the insulating film 111.
[0092] For the insulating film 111, just an insulating film formed
by the high density plasma treatment may be used, or at least one
insulating film of silicon oxide, silicon nitride containing
oxygen, silicon oxide containing nitrogen, or the like may be
additionally stacked over the insulating film by a CVD method
utilizing plasma or heat reaction. Either way, transistors in each
of which a gate insulating film is partly or entirely an insulating
film formed by the high density plasma can be made to have little
variations in characteristic.
[0093] The insulating film 111 may use the following which have
favorable compatibility with the oxide semiconductor film: alumina
(Al.sub.2O.sub.3), aluminum nitride (AlN), titanium oxide
(TiO.sub.2), zirconia (ZrO.sub.2), lithium oxide (Li.sub.2O),
potassium oxide (K.sub.2O), sodium oxide (Na.sub.2O), indium oxide
(In.sub.2O.sub.3), yttrium oxide (Y.sub.2O.sub.3), or calcium
zirconate (CaZrO.sub.3); or a material including at least two
thereof. The gate insulating film 111 may be formed as a single
layer or as stacked layers of two or more layers.
[0094] The insulating film 111 is preferably formed using a
light-transmitting material or a material with high light
transmittance. Also, the conductive layer 107a, the conductive
layer 107b, or the semiconductor film 112 are preferably formed
using a light-transmitting material or a material with high light
transmittance. Therefore, comparing their light transmittance, it
is preferable that the insulating film 111 have higher light
transmittance than or approximately the same transmittance as the
conductive layer 107a, the conductive layer 107b, or the
semiconductor film 112. This is because the insulating film 111 is
formed to have a large area in some cases and higher transmittance
is preferable in order to increase the use efficiency of light.
[0095] Since the insulating film 111 preferably functions as an
insulator, the insulating film 111 preferably has a resistivity
that is appropriate for the insulator. On the other hand, the
conductive layers 107a and 107b preferably function as conductors,
and the semiconductor film 112 preferably functions as a
semiconductor. Therefore, the insulating film 111 preferably has
higher resistivity than the conductive layer 107a, the conductive
layer 107b, the conductive layers 110a and 110b, and the
semiconductor film 112. The insulating film 111 with a high
resistivity is preferable because the conductors can be
electrically insulated from each other, whereby the leakage of
current can be suppressed and a circuit can operate with higher
performance.
[0096] Next, the semiconductor film 112 is formed over the
insulating film 111. The semiconductor film 112 is preferably
formed using a light-transmitting material or a material with high
light transmittance. The semiconductor film 112 can be formed by
using an oxide semiconductor. For the oxide semiconductor, zinc
oxide (ZnO) in an amorphous state, a polycrystalline state, or a
microcrystalline state in which both amorphous and polycrystalline
states exist, to which one type or a plurality of types of impurity
elements selected from the following is added can be used: a Group
1 element (for example, lithium (Li), sodium (Na), kalium (K),
rubidium (Rb), or cesium (Cs)), a Group 13 element (for example,
boron (B), gallium (Ga), indium (In), or thallium (Tl)), a Group 14
element (for example, carbon (C), silicon (Si), germanium (Ge), tin
(Sn), or lead (Pb)), a Group 15 element (for example, nitrogen (N),
phosphorus (P), arsenic (As), antimony (Sb), or bismuth (Bi)), a
Group 17 element (for example, fluorine (F), chlorine (Cl), bromine
(Br), or iodine (I)), or the like. Alternatively, zinc oxide (ZnO)
in an amorphous state, a polycrystalline state, or a
microcrystalline state in which both amorphous and polycrystalline
states exist, to which any impurity element is not added can also
be used. Further, any of the following can also be used:
InGaO.sub.3(ZnO).sub.5, magnesium zinc oxide (Mg.sub.xZn.sub.1-xO),
cadmium zinc oxide (Cd.sub.xZn.sub.1-xO), cadmium oxide (CdO), or
an In--Ga--Zn--O based amorphous oxide semiconductor (a-IGZO). The
semiconductor film 112 is formed to a thickness of 25 to 200 nm
(preferably 30 to 150 nm) by a sputtering method under conditions
of a pressure of 0.4 Pa and a flow rate of Ar (argon):O.sub.2=50:5
(sccm), and then subsequently etching the film using hydrofluoric
acid diluted to 0.05% into a desired pattern. Compared to a
semiconductor film using an amorphous silicon film, the
semiconductor film 112 does not need to be formed under high vacuum
since there is no concern for oxidation, and is inexpensive as a
process. Note that since an oxide semiconductor film containing
zinc oxide is resistant against plasma, a plasma CVD (also called
PCVD or PECVD) method may be used to form the film. Among CVD
methods, the plasma CVD method in particular uses a simple device,
and has favorable productivity.
[0097] Moreover, nitrogen may be added to the foregoing oxide
semiconductor. By adding nitrogen, nitrogen works as an acceptor
impurity when the oxide semiconductor film shows an n-type
semiconductor property. Consequently, a threshold voltage of a
transistor manufactured using an oxide semiconductor film to which
nitrogen is added can be controlled. When ZnO is used for the oxide
semiconductor, it is favorable that nitrogen be added (doped) to
ZnO. ZnO normally shows an n-type semiconductor property. By adding
nitrogen, since nitrogen works as an acceptor with respect to ZnO,
a threshold voltage can be controlled as a result. In the case
where the oxide semiconductor film has an n-type conductivity as it
is, an impurity imparting p-type conductivity may be added to a
portion of the oxide semiconductor film, in which a channel is to
be formed, so that the conductivity type of the portion may be
controlled so as to be closer to an i-type (intrinsic
semiconductor) as much as possible.
[0098] A thermal treatment may be performed on the semiconductor
film 112. By performing a thermal treatment on the semiconductor
film 112, the crystallinity in the semiconductor 112 may be
increased. The crystallization of the semiconductor film 112 may be
performed at least in a channel formation region of the transistor.
By increasing the crystallinity of the channel formation region of
the transistor, characteristics of the transistor can be
improved.
[0099] As the thermal treatment, an RTA (rapid thermal anneal)
apparatus or an LRTA (lamp rapid thermal anneal) apparatus which
uses a halogen lamp or a lamp for heating can be employed. The LRTA
apparatus can use light with a wavelength in an infrared rays
range, a visible light range, or an ultra violet range. In the case
of the LRTA apparatus, heating is performed at 250 to 570.degree.
C. (preferably 300 to 400.degree. C., more preferably 300 to
350.degree. C.) for 1 minute to 1 hour, preferably 10 to 30
minutes. LRTA is performed with radiation from one type or a
plurality of types of lamps selected from a halogen lamp, a metal
halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure
sodium lamp, and a high pressure mercury lamp.
[0100] Note that instead of LRTA, a heating treatment may be
performed by laser light irradiation, and for example, laser light
of an infrared light laser, a visible light laser, an ultraviolet
laser, or the like may be used. Alternatively, LRTA and laser light
irradiation may be combined to selectively improve crystallinity of
the oxide semiconductor film. When laser irradiation is performed,
a continuous wave laser beam (CW laser beam) or a pulsed laser beam
(pulse laser beam) can be used. As the laser beam, a beam emitted
from one or plural kinds of a gas laser such as an Ar laser, a Kr
laser, or an excimer laser; a laser using, as a medium, single
crystalline YAG, YVO.sub.4, forsterite (Mg.sub.2SiO.sub.4),
YAlO.sub.3, or GdVO.sub.4 or polycrystalline (ceramic) YAG,
Y.sub.2O.sub.3, YVO.sub.4, YAlO.sub.3, or GdVO.sub.4 doped with one
or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a dopant; a glass
laser; a ruby laser; an alexandrite laser; a Ti: sapphire laser; a
copper vapor laser; and a gold vapor laser, can be used. By
emitting a laser beam from the fundamental harmonic of such a laser
beam or the second harmonic to the fourth harmonic of the
fundamental harmonic of the laser beam, crystallinity can be made
to be favorable. Note that it is preferable to use laser light
having larger energy than a band gap of the oxide semiconductor
film. For example, laser light emitted from a KrF, ArF, XeCl, or an
XeF excimer laser oscillator may be used.
[0101] The semiconductor film 112 is preferably formed using a
light-transmitting material or a material with high light
transmittance. Also, the conductive layer 107a and the conductive
layer 107b are preferably formed using a light-transmitting
material or a material with high light transmittance. Therefore,
comparing their light transmittance, it is preferable that the
conductive layer 107a and the conductive layer 107b have higher
light transmittance than or approximately the same transmittance as
the semiconductor film 112. This is because the conductive layer
107a and the conductive layer 107b are formed to have large areas
in some cases and higher transmittance is preferable in order to
increase the use efficiency of light.
[0102] Although the semiconductor film 112 is preferably formed
using a light-transmitting material or a material with high light
transmittance, this embodiment is not limited thereto. Even if
light transmittance is low, any material can be used as long as the
material can transmit light. For example, the semiconductor film
112 can include silicon (Si) or germanium (Ge). Further, the
semiconductor film 112 preferably has at least any one of
crystalline states selected from a single crystal
(mono-crystalline) state, polycrystalline state, amorphous state,
and microcrystalline (nano-crystalline, semi-amorphous) state. The
amorphous state has an advantage in that the semiconductor film 112
may be formed at a low manufacturing temperature, a large
semiconductor device or display device can be formed, and a
substrate whose melting point is lower than that of glass can be
used, or the like, which is preferable.
[0103] Since the semiconductor film 112 preferably functions as the
semiconductor, the semiconductor film 112 preferably has a
resistivity that is appropriate for the semiconductor. On the other
hand, the conductive layers 107a and 107b preferably function as
conductors. Therefore, the semiconductor film 112 preferably has
higher resistivity than the conductive layer 107a and the
conductive layer 107b.
[0104] Next, a resist mask (not shown) is formed over the
semiconductor film 112 by a photolithography method, and then
etching is performed by using the resist mask to form a
semiconductor layer 113 (also referred to as an island-shaped
semiconductor layer) which is processed into a desired shape, as
shown in FIG. 4C and FIG. 5C. For the etching, hydrofluoric acid
diluted to 0.05%, hydrochloric acid, or the like can be used.
[0105] The semiconductor layer 113 can function as a semiconductor
layer (active layer) of the transistor or part of the semiconductor
layer (active layer) of the transistor. Alternatively, the
semiconductor layer 113 can function as a MOS capacitor or part of
the MOS capacitor. Alternatively, the semiconductor layer 113 can
function as a film for reducing parasitic capacitance at the
intersection portion of wirings. Although not shown, a
semiconductor layer containing an impurity element imparting one
conductivity type for forming source and drain regions in the
semiconductor layer 113 may be formed.
[0106] Next, as shown in FIG. 4D and FIG. 5D, a conductive film 114
and a conductive film 115 are formed so as to be stacked and cover
the semiconductor 113 and the insulating film 111 by a sputtering
method. These steps are consecutively performed, and further,
sputtering can be consecutively performed by using a multi-chamber.
By consecutively forming the conductive film 114 and the conductive
film 115, throughput is increased and contamination by an impurity
or dust can be suppressed.
[0107] It is preferable that the light transmittance of the
conductive film 114 be sufficiently high. Moreover, it is
preferable that the light transmittance of the conductive film 114
be higher than that of the conductive film 115.
[0108] As the conductive film 114, indium tin oxide (ITO), indium
tin oxide containing silicon oxide (ITSO), organic indium, organic
tin, zinc oxide, titanium nitride, or the like can be used.
Alternatively, indium zinc oxide (IZO) containing zinc oxide (ZnO),
ZnO doped with gallium (Ga), tin oxide (SnO.sub.2), indium oxide
containing tungsten oxide, indium zinc oxide containing tungsten
oxide, indium oxide containing titanium oxide, indium tin oxide
containing titanium oxide, or the like may be used. Such a material
can be used for forming the conductive film 114 with a single-layer
structure or a layered structure by sputtering. However, in the
case of the layered structure, the light transmittance of each of a
plurality of films is preferably high enough.
[0109] The conductive film 114 is preferably formed using a
material approximately the same as that used for the conductive
film 102. Approximately the same material is a material having the
same element of a main component of the material used for the
conductive film 102. In terms of impurities, the kinds and the
concentration of elements contained are different in some cases. In
this manner, when the light-transmitting conductive film is formed
using approximately the same material by sputtering or evaporation,
there is an advantage in that the material can be shared between
the conductive films 102 and 114. When the material can be shared,
the same manufacturing apparatus can be used, manufacturing steps
can proceed smoothly, and throughput can be improved, whereby cost
cut can be achieved.
[0110] The resistivity of the conductive film 115 is preferably low
enough and the conductivity of the conductive film 115 is
preferably high enough. In addition, the resistivity of the
conductive film 114 is preferably higher than that of the
conductive film 115. However, since the conductive film 114
functions as a conductive layer, the resistivity of the conductive
film 114 is preferably lower than that of the insulating layer.
[0111] The conductive film 115 can be formed to have a single-layer
structure or a layered structure using a metal material such as
molybdenum, titanium, chromium, tantalum, tungsten, aluminum,
copper, neodymium, or scandium, or an alloy material containing the
above material as its main component, by sputtering or vacuum
evaporation. In addition, in the case where the conductive film 115
is formed to have a layered structure, a light-transmitting
conductive film may be included in the plurality of films.
[0112] Moreover, the conductive film 115 is preferably formed using
a material different from that used for the conductive film 103.
Alternatively, the conductive film 115 is preferably formed to have
a layered structure which is different from that of the
light-shielding conductive film. This is because, in manufacturing
steps, temperatures applied on the conductive film 115 and the
conductive film 103 are different from each other in many cases. In
general, the conductive film 103 tends to have a higher
temperature. Accordingly, the conductive film 103 is preferably
formed using a material or a layered structure with a higher
melting point. Alternatively, the conductive film 103 is preferably
formed using a material or a layered structure in which hillock is
less likely to occur. Alternatively, since the conductive film 115
is included in a signal line through which a video signal is
supplied in some cases, the conductive film 115 is preferably
formed using a material or a layered structure having lower wiring
resistance than the conductive film 103.
[0113] Note that when the conductive film 115 is formed over the
conductive film 114, both of the films react with each other in
some cases. For example, when the top surface (a surface which is
in contact with the conductive film 115) of the conductive film 114
is formed using ITO and the bottom surface (a surface which is in
contact with the conductive film 114) of the conductive film 115 is
formed using aluminum, a chemical reaction occurs. Accordingly, in
order to avoid the chemical reaction, a material with a high
melting point is preferably used for the bottom surface (the
surface which is in contact with the conductive film 114) of the
conductive film 115. For example, as the material with a high
melting point, molybdenum (Mo), titanium (Ti), tungsten (W),
neodymium (Nd), or the like can be given. Also, it is preferable to
form the conductive film 115 into a multi-layer film by using a
material with high conductivity over a film formed using the
material with the high melting point. As the material with high
conductivity, aluminum (Al), copper (Cu), silver (Ag), or the like
can be given. Such materials have a light-shielding property and
reflectivity.
[0114] Next, as shown in FIG. 6A and FIG. 7A, resist masks 118a to
118c are formed over the conductive film 115. The resist masks 118a
to 118c can be formed to have regions with different thicknesses by
using a multi-tone mask.
[0115] As shown in FIG. 6A and FIG. 7A, a half-tone mask includes
semi-light-transmitting layers 117b to 117d and a light-shielding
layer 117a on a light-transmitting substrate 116. Accordingly, over
the conductive film 115, thin resist masks are formed on portions
which are to be an upper electrode of the storage capacitor portion
and source and drain electrodes, and a thick resist mask is formed
on a portion which is to be a source wiring.
[0116] Next, as shown in FIG. 6B and FIG. 7B, the conductive films
114 and 115 are etched by using the resist masks 118a to 118c. By
the etching, conductive layers 119a, 119b, 119c, 120a, 120b, and
120c can be formed.
[0117] Here, by etching the semiconductor layer 113 with diluted
hydrofluoric acid, part of a channel can be etched.
[0118] Next, as shown in FIG. 6C and FIG. 7C, the resist masks 118a
to 118c are ashed by an oxygen plasma. By ashing the resist masks
118a to 118c by the oxygen plasma, the resist masks 118b and 118c
are removed and the conductive layers 120b and 120c under the
resist masks 118b and 118c are exposed. In addition, the resist
mask 118a becomes small and remains as a resist mask 121. In this
manner, by using the resist mask formed using a multi-tone mask, a
resist mask is not additionally used, so that steps can be
simplified.
[0119] Next, as shown in FIG. 8A and FIG. 9A, the light-shielding
conductive layer is etched by using the resist mask 121. As a
result, part of the conductive layer 120a and the conductive layer
120c are removed and the conductive layers 119b and 119c are
exposed. In addition, the conductive layers 119a and 120a except a
portion on which the resist mask 121 is formed is removed. This is
because the conductive layers 120a is exposed due to the reduction
of the resist mask 118a in size by the ashing treatment.
Accordingly, the part of the light-shielding conductive layer 120a,
which is not covered with the resist mask 121 is etched at the same
time. Thus, the areas of the conductive layer 122 and the
conductive layer 119a are largely different. In other words, the
area of the conductive layer 119a is larger than that of the
conductive layer 122. Alternatively, the conductive layers 122 and
119a include a region in which the conductive layers 122 and 119a
overlap with each other, and a region in which the conductive
layers 122 and 119a do not overlap with each other.
[0120] When the light-shielding conductive layer is removed, part
of the light-transmitting conductive layer (for example, a surface
portion which is in contact with the light-shielding conductive
layer) is also removed in some cases. The selectivity of the
light-shielding conductive layer to the light-transmitting
conductive layer in etching determines how much the
light-transmitting conductive layer is removed. Therefore, for
example, the thickness of the conductive layer 119a in a region
covered with the conductive layer 122 is larger than that of the
conductive layer 119a in a region which is not covered with the
conductive layer 122 in many cases.
[0121] Note that part of a region in the conductive layers 122 and
119a (a region mainly including the conductive layer 122) can
function as the source wiring or part of the source wiring while
another part of the region (a region mainly including only the
conductive layer 119a) can function as the source electrode or part
of the source electrode of the transistor. It is preferable that a
region in which the conductive layers 122 and 119a overlap with
each other function as the source wiring or the part of the source
wiring because the region includes the conductive layer 122 which
has high conductivity in many cases. Alternatively, it is
preferable that the conductive layer 119a in the region which does
not include the conductive layer 122 function as the source
electrode or the part of the source electrode of the transistor
because the region can transmit light in some cases.
[0122] Accordingly, in the conductive layers 122 and 119a, a wiring
which functions as the source electrode, may be considered to be
connected to a wiring which functions as the source wiring (or at
least one of the conductive layers 122 and 119a which functions as
the source wiring). Alternatively, at least one of the conductive
layers 122 and 119a included in the source wiring may be formed to
have a larger area than the other layer included in the source
wiring; part of the region with the larger area can be considered
to function as the source electrode. Alternatively, the conductive
layer 119a may be formed to have a larger area than the conductive
layer 122; part of the region with the larger area can be
considered to function as the source electrode. That is, the part
of the source wiring can be considered to function as the source
electrode or the part of the source electrode. Alternatively, the
conductive layer 122 that mainly functions as the source wiring or
the part of the source wiring can be considered to be formed over
the conductive layer 119a that mainly functions as the source
electrode or the part of the source electrode.
[0123] Here, as for the source electrode, since source and drain
are switched to each other depending on the level of voltage, the
polarity of a transistor, or the like, source can be drain.
[0124] Moreover, part of a region in the light-shielding conductive
layer and the conductive layer 119c (a region mainly including the
light-shielding conductive layer) can function as the capacitor
wiring or part of the capacitor wiring, and another part of the
region (a region mainly including only the conductive layer 119c)
can function as an electrode of a capacitor element or part of the
electrode of the capacitor element. It is preferable that a region
in which the light-shielding conductive layer and the conductive
layer 119c overlap with each other function as the capacitor wiring
or the part of the capacitor wiring because the region includes the
light-shielding conductive layer which has high conductivity in
many cases. Alternatively, it is preferable that the conductive
layer 119c in the region which does not include the light-shielding
conductive layer function as the electrode of the capacitor element
or the part of the electrode of the capacitor element because the
region can transmit light in some cases.
[0125] Accordingly, in the light-shielding conductive layer and the
conductive layer 119c, a wiring which functions as the electrode of
the capacitor element, may be considered to be connected to a
wiring which functions as the capacitor element (or at least one of
the light-shielding conductive layer and the conductive layer 119c
which functions as the capacitor wiring). Alternatively, at least
one of the light-shielding conductive layer and the conductive
layer 119c included in the capacitor wiring may be formed to have a
larger area than the other layer included in the capacitor wiring;
part of the region with the larger area can be considered to
function as the electrode of the capacitor element. Alternatively,
the conductive layer 119c may be formed to have a larger area than
the light-shielding conductive layer; part of the region with the
larger area can be considered to function as the electrode of the
capacitor element. That is, the part of the capacitor wiring can be
considered to function as the electrode of the capacitor element or
the part of the electrode of the capacitor element. Alternatively,
the conductive layer 110b that mainly functions as the capacitor
wiring or the part of the capacitor wiring can be considered to be
formed over the conductive layer 119c that mainly functions as the
electrode of the capacitor element or the part of the electrode of
the capacitor element.
[0126] Next, as shown in FIG. 8C and FIG. 9C, the resist mask 121
is removed. In this manner, a transistor 130 and a capacitor
element 131 can be formed into light-transmitting elements.
[0127] Since FIG. 9B is a cross-sectional view which is turned
perpendicularly to a direction in which the source and drain
electrodes are formed, the source and drain electrodes are not
shown.
[0128] Next, as shown in FIG. 8B and FIG. 9B, an insulating film
123 is formed. The insulating film 123 may be formed to have a
single-layer structure or a layered structure. In the case of the
layered structure, the light transmittance of each of films is
preferably high enough. The insulating film 123 functions as an
insulating film which protects the transistor from an impurity or
the like. In addition, the insulating film 123 can function as an
insulating film for smoothing unevenness due to the transistor, the
capacitor element, the wiring, and the like and flattening the
surface on which the transistor, the capacitor element, the wiring,
and the like are formed. In other words, the insulating film 123
can function as a flattening film.
[0129] In specific, since the transistor 130 and the capacitor
element 131 can be formed as the light-transmitting elements, it is
advantageous to flatten a top portion where these elements are
formed by smoothing unevenness due to these elements or the wiring
and the like in order to use the region where these elements are
formed as an opening region.
[0130] The insulating film 123 is preferably formed using a film
containing silicon nitride. A silicon nitride film is preferable
because it has high effect of blocking impurities. Alternatively,
the insulating film 123 is preferably formed using a film
containing an organic material. As an example of the organic
material, acrylic, polyimide, polyamide, or the like is preferable.
Such organic materials are preferable in terms of a high function
of flattening unevenness. Accordingly, in the case where the
insulating film 123 is formed to have a layered structure of a
silicon nitride film and a film of an organic material, it is
preferable to provide the silicon nitride film and the film of the
organic nitride in the lower side and in the upper side,
respectively.
[0131] Note that the insulating film 123 can function as a color
filter. By providing a color filter over the substrate 101, a
counter substrate does not need to be provided with a color filter.
Therefore, a margin for adjusting the position of two substrates is
not necessary, whereby manufacturing of a panel can be made
simple.
[0132] Next, part of the insulating film 123 or part of the
insulating films 123 and 111 is removed to form a contact hole.
[0133] Next, as shown in FIGS. 8D and 9D, a conductive film is
formed over the insulating film 123 and in the contact hole. Then,
part of the conductive film is etched to form conductive films 124a
and 124b. The conductive film may be formed to have a single-layer
structure or a layered structure. In the case of the layered
structure, the light transmittance of each of films is preferably
high enough.
[0134] The conductive films 124a and 124b can function as pixel
electrodes. Alternatively, the conductive films 124a and 124b can
function as the electrodes of the capacitor element. Therefore, it
is preferable that the conductive films 124a and 124b be formed
using a light-transmitting material or a material with high light
transmittance.
[0135] The conductive films 124a and 124b can connect the source
wiring, the source electrode, the gate wiring, the gate electrode,
the pixel electrode, the capacitor wiring, the electrode of the
capacitor element, and the like to each other through the contact
hole. Therefore, the conductive films 124a and 124b can function as
a wiring for connecting conductors.
[0136] It is preferable to form the conductive films 124a and 124b
and the conductive film 102 by using approximately the same
material. Alternatively, it is preferable to form the conductive
films 124a and 124b and the conductive film 114 by using
approximately the same material. In this manner, when the
light-transmitting conductive film is formed using approximately
the same material by sputtering or evaporation, there is an
advantage in that the material can be shared between the conductive
films. When the material can be shared, the same manufacturing
apparatus can be used, manufacturing steps can proceed smoothly,
and throughput can be improved, whereby cost cut can be
achieved.
[0137] Although a manufacturing method of a channel-etched
transistor is described in this embodiment, one embodiment of this
invention is not limited thereto and a channel-protective
transistor can also be manufactured. One example of a
cross-sectional view of a channel-protective transistor is shown in
FIG. 19. The channel-protective transistor can be formed through
the same manner as the channel-etched transistor up to the steps in
FIG. 4A and FIG. 5A. Next, in FIG. 4B and FIG. 5B, a protective
film 130 is formed after the semiconductor film 112 is formed. As
the protective film 132, silicon oxide, silicon nitride, silicon
oxynitride, silicon nitride oxide, or the like can be used as
appropriate. Next, a resist mask is formed over the protective film
132 and the protective film 132 is processed into a desired shape
by etching to form a channel protective layer. After that, the same
manufacturing step as the channel-etched transistor may be
performed from FIG. 4C and FIG. 5C except for the step of removing
part of the channel.
[0138] Through this, the light-transmitting transistor or the
light-transmitting capacitor element can be formed by employing one
embodiment of this invention. Therefore, even if the transistor or
the capacitor element is provided in a pixel, aperture ratio can be
made high. Further, since a wiring for connecting the transistor
and an element (e.g., another transistor) or a wiring for
connecting a capacitor element and an element (e.g., another
capacitor element) can be formed by using a material with low
resistivity and high conductivity, the distortion of the waveform
of a signal and a voltage drop due to wiring resistance can be
reduced.
[0139] Next, another example of an element substrate which is
different from that in FIGS. 1A and 1B will be described with
reference to FIGS. 10A and 10B. FIG. 10A is a top view of a
semiconductor device of this embodiment and FIG. 10B is a
cross-sectional view thereof along line F-G. FIGS. 10A and 10B are
different from FIGS. 1A and 1B in that the area of the lower
electrode (a conductive layer 107c) of a storage capacitor portion
is large and an upper electrode of the storage capacitor portion is
the pixel electrode 124. The size of the storage capacitor portion
is preferably larger than pixel pitch by 70% or more or 80% or
more. Hereinafter, since the structure except for the storage
capacitor portion and the storage capacitor wiring in FIGS. 10A and
10B is the same as that in FIGS. 1A and 1B, the detailed
description thereof is skipped.
[0140] By employing such a structure, transmittance can be
increased because the upper electrode of the storage capacitor
portion does not need to be formed in forming the source wiring and
the source and drain electrodes. In addition, the large storage
capacitor portion with high transmittance can be formed. By forming
the large storage capacitor portion, even if the transistor is
turned off, a potential of the pixel electrode is easily stored.
Moreover, feedthrough potential can be low. Further, even if the
large storage capacitor portion is formed, aperture ratio can be
made high and power consumption can be reduced. Furthermore, since
the insulating film has two layers, interlayer short-circuiting due
to a pinhole or the like generated in the insulating film can be
prevented. Furthermore, the unevenness of the capacitor wiring can
be smoothed and disorder of the alignment of liquid crystals can be
suppressed.
[0141] Next, another example of an element substrate which is
different from that in FIGS. 1A and 1B will be described with
reference to FIGS. 11A and 11B. FIG. 11A is a top view of a
semiconductor device of this embodiment and FIG. 11B is a
cross-sectional view thereof along line H-I. FIGS. 11A and 11B are
different from FIGS. 1A and 1B in that a lower electrode (a
conductive layer 107d) of the storage capacitor portion is large, a
capacitor wiring is formed by stacking a light-transmitting
conductive layer and a light-shielding conductive layer in this
order, and an upper electrode (a conductive layer 119d) of the
storage capacitor portion is large. The size of the storage
capacitor portion is preferably larger than pixel pitch by 70% or
more or 80% or more. Hereinafter, since the structure except for
the storage capacitor portion in FIGS. 11A and 11B is the same as
that in FIGS. 1A and 1B, the detailed description thereof is
skipped.
[0142] By employing such a structure, the blunting of the waveform
of a signal and a voltage drop due to wiring resistance can be
suppressed because the capacitor wiring can be formed by using a
material with low resistivity and high conductivity. In addition,
even if disorder of the alignment of liquid crystals is caused by
unevenness due to the contact hole in the pixel electrode, the
leakage of light can be prevented by the light-shielding conductive
layer in the capacitor wiring. Further, by forming the large
storage capacitor, even if the transistor is turned off, a
potential of the pixel electrode is easily stored. Moreover,
feedthrough potential can be low. Further, even if the large
storage capacitor is formed, aperture ratio can be made high and
power consumption can be reduced.
[0143] Next, another example of an element substrate which is
different from that in FIGS. 1A and 1B will be described with
reference to FIGS. 12A and 12B. FIG. 12A is a top view of a
semiconductor device of this embodiment and FIG. 12B is a
cross-sectional view thereof along line J-K. FIGS. 12A and 12B are
different from FIGS. 1A and 1B in that the light-transmitting
conductive layer 107c which functions as the lower electrode of the
storage capacitor portion is large and the light-transmitting
conductive layer 119e which functions as the upper electrode of the
storage capacitor portion is large. The size of the storage
capacitor portion is preferably larger than pixel pitch by 70% or
more or 80% or more. Hereinafter, since the structure except the
storage capacitor portion in FIGS. 12A and 12B is the same as that
in FIGS. 1A and 1B, the detailed description thereof is
skipped.
[0144] By employing such a structure, the large storage capacitor
with high transmittance can be formed. By forming the large storage
capacitor, even if the transistor is turned off, a potential of the
pixel electrode is easily stored. Moreover, feedthrough potential
can be low. Further, even if the large storage capacitor is formed,
aperture ratio can be made high and power consumption can be
reduced.
[0145] Next, the appearance and cross section of a display device
of this embodiment will be described with reference to FIGS. 14A
and 14B. FIG. 14A is a top view of a liquid crystal display device
in which a thin film transistor 4010 including a semiconductor
layer and a liquid crystal element 4013 that are formed over a
first substrate 4001 are sealed with a sealant 4005 between the
first substrate 4001 and a second substrate 4006. FIG. 14B is a
cross-sectional view taken along line A-A' of FIG. 14A.
[0146] A sealant 4005 is provided so as to surround a pixel portion
4002 and a scanning line driver circuit 4004 which are provided
over a first substrate 4001. A second substrate 4006 is provided
over the pixel portion 4002 and the scanning line driver circuit
4004. Therefore, the pixel portion 4002 and the scanning line
driver circuit 4004 are sealed, together with liquid crystal 4008,
between the first substrate 4001 and the second substrate 4006 with
the sealant 4005. A signal line driver circuit 4003 formed over a
substrate, which is prepared separately, using a polycrystalline
semiconductor film is mounted at a region different from the region
surrounded by the sealant 4005 over the first substrate 4001. Note
that although this embodiment will explain an example of attaching
the signal line driver circuit 4003 including a thin film
transistor formed using a polycrystalline semiconductor film to the
first substrate 4001, a signal line driver circuit including a thin
film transistor, which is formed using a single-crystalline
semiconductor film, may be attached to the first substrate 4001.
FIGS. 14A and 14B exemplifies a thin film transistor 4009 formed
using a polycrystalline semiconductor film, which is included in
the signal line driver circuit 4003.
[0147] The pixel portion 4002 and the scanning line driver circuit
4004 formed over the first substrate 4001 each include a plurality
of thin film transistors, and the thin film transistor 4010
included in the pixel portion 4002 is illustrated as an example in
FIG. 14B. The thin film transistor 4010 corresponds to a thin film
transistor using a semiconductor film. Although the storage
capacitor portion is not shown in the pixel portion 4002, the
storage capacitor portion shown in FIGS. 1A and 1B, FIGS. 10A and
10B, FIGS. 11A and 11B, and FIGS. 12A and 12B can be formed.
[0148] As described above, the gate wiring which is electrically
connected to the gate electrode of the transistor is formed by
stacking the light-transmitting conductive layer and the
light-shielding conductive layer in this order, and the source
wiring which is electrically connected to the source and drain
electrodes of the transistor is formed by stacking the
light-transmitting conductive layer and the light-shielding
conductive layer in this order. That is, the gate electrode of the
transistor is formed using part of the light-transmitting
conductive layer included in the gate wiring and the source and
drain electrodes are formed using part of the light-transmitting
conductive layer included in the source wiring.
[0149] By stacking the light-transmitting conductive layer and the
light-shielding conductive layer in this order to form the gate
wiring and the source wiring, wiring resistance and power
consumption can be reduced. In addition, since the gate wiring and
the source wiring are each formed using the light-shielding
conductive layer, a space between pixels can be shielded from
light. Accordingly, with the gate wiring provided in a row
direction and the source wiring provided in a column direction, the
space between the pixels can be shielded from light without using a
black matrix.
[0150] In this manner, by forming the storage capacitor portion
with the light-transmitting conductive layer, aperture ratio can be
increased. In addition, by forming the storage capacitor portion
with the light-transmitting conductive layer, the storage capacitor
portion can be large, so that the potential of a pixel electrode
can be easily stored even when the transistor is turned off.
[0151] Reference numeral 4013 denotes a liquid crystal element, and
a pixel electrode 4030 included in the liquid crystal element 4013
is electrically connected to the thin film transistor 4010 through
a wiring 4040. A counter electrode 4031 of the liquid crystal
element 4013 is formed on the second substrate 4006. The liquid
crystal element 4013 corresponds to a portion where the pixel
electrode 4030, the counter electrode 4031, and the liquid crystal
4008 overlap with each other.
[0152] Note that the first substrate 4001 and the second substrate
4006 can be formed by using glass, metal (typically, stainless
steel), ceramic or plastic. As plastic, a fiberglass-reinforced
plastics (FRP) plate, a polyvinyl fluoride (PVF) film, a polyester
film, or an acrylic resin film can be used. In addition, a sheet
with a structure in which an aluminum foil is sandwiched between
PVF films or polyester films can be used.
[0153] Reference numeral 4035 denotes a spherical spacer which is
provided to control a distance (a cell gap) between the pixel
electrode 4030 and the counter electrode 4031. Note that a spacer
obtained by selective etching of an insulating film may be
used.
[0154] A variety of signals and potential are supplied to the
signal line driver circuit 4003 which is formed separately, the
scanning line driver circuit 4004, or the pixel portion 4002 via
leading wirings 4014 and 4015 from an FPC 4018.
[0155] In this embodiment, a connecting terminal 4016 is formed
using the same conductive film as the pixel electrode 4030 included
in the liquid crystal element 4013. In addition, the leading
wirings 4014 and 4015 are formed using the same conductive film as
the wiring 4040.
[0156] The connecting terminal 4016 is electrically connected to a
terminal of an FPC 4018 through an anisotropic conductive film
4019.
[0157] Although not shown, the liquid crystal display device shown
in this embodiment includes an alignment film, a polarizing plate,
and further, may include a color filter and a blocking film.
[0158] Note that FIGS. 14A and 14B illustrate an example in which
the signal line driver circuit 4003 is formed separately and
mounted on the first substrate 4001, but this embodiment is not
limited to this structure. The scanning line driver circuit may be
separately formed and then mounted, or only part of the signal line
driver circuit or part of the scanning line driver circuit may be
separately formed and then mounted.
[0159] Next, the appearance and cross section of a light-emitting
display panel (also referred to as a light-emitting panel) which
corresponds to one embodiment of a semiconductor device will be
described with reference to FIGS. 18A and 18B. FIG. 18A is a top
view of a panel in which highly reliable thin film transistors 4509
and 4510 which include semiconductor layers of In--Ga--Zn--O-based
non-single crystal films described in Embodiment 1, and a
light-emitting element 4511, which are formed over a first
substrate 4501, are sealed between the first substrate 4501 and a
second substrate 4506 with a sealing material 4505. FIG. 18B
corresponds to a cross-sectional view of FIG. 18A along line
H-I.
[0160] The sealing material 4505 is provided so as to surround a
pixel portion 4502, a signal line driver circuits 4503a and 4503b,
and scan line driver circuits 4504a and 4504b which are provided
over the first substrate 4501. In addition, the second substrate
4506 is formed over the pixel portion 4502, the signal line driver
circuits 4503a and 4503b, and scanning line driver circuits 4504a
and 4504b. Accordingly, the pixel portion 4502, the signal line
driver circuits 4503a and 4503b, and the scanning line driver
circuits 4504a and 4504b are sealed, together with a filler 4507,
with the first substrate 4501, the sealing material 4505, and the
second substrate 4506. In this manner, it is preferable that the
pixel portion 4502, the signal line driver circuits 4503a and
4503b, and the scanning line driver circuits 4504a and 4504b be
packaged (sealed) with a protective film (such as an attachment
film or an ultraviolet curable resin film) or a cover material with
high air-tightness and little degasification so that the pixel
portion 4502, the signal line driver circuits 4503a and 4503b, and
the scanning line driver circuits 4504a and 4504b is not exposed to
external air.
[0161] The pixel portion 4502, the signal line driver circuits
4503a and 4503b, and the scanning line driver circuits 4504a and
4504b formed over the first substrate 4501 each include a plurality
of thin film transistors, and the thin film transistor 4510
included in the pixel portion 4502 and the thin film transistor
4509 included in the signal line driver circuit 4503a are
illustrated as an example in FIG. 18B.
[0162] As the thin film transistors 4509 and 4510, highly reliable
thin film transistors shown in Embodiment 1 including
In--Ga--Zn--O-based non-single-crystal films as semiconductor
layers can be used. In this embodiment, the thin film transistors
4509 and 4510 are n-channel thin film transistors.
[0163] Moreover, reference numeral 4511 denotes a light-emitting
element. A first electrode layer 4517 which is a pixel electrode
included in the light-emitting element 4511 is electrically
connected to source and drain electrode layers of the thin film
transistor 4510. Note that although the light-emitting element 4511
has a layered structure of the first electrode layer 4517, an
electric field light-emitting layer 4512, and the second electrode
layer 4513, the structure of the light-emitting element 4511 is not
limited to the structure shown in this embodiment. The structure of
the light-emitting element 4511 can be changed as appropriate
depending on a direction in which light is extracted from the
light-emitting element 4511, or the like.
[0164] The partition wall 4520 is formed using an organic resin
film, an inorganic insulating film, or organic polysiloxane. It is
particularly preferable that the partition wall 4520 be formed
using a photosensitive material to have an opening portion on the
first electrode layer 4517 so that a sidewall of the opening
portion is formed as a tilted surface with continuous
curvature.
[0165] The electric field light-emitting layer 4512 may be formed
using a single layer or a plurality of layers stacked.
[0166] In order to prevent entry of oxygen, hydrogen, carbon
dioxide, water, or the like into the light-emitting element 4511, a
protective film may be formed over the second electrode layer 4513
and the partition wall 4520. As the protective film, a silicon
nitride film, a silicon nitride oxide film, a DLC film, or the like
can be formed.
[0167] In addition, a variety of signals and potentials are
supplied to the signal line driver circuits 4503a and 4503b, the
scanning line driver circuits 4504a and 4504b, or the pixel portion
4502 from FPCs 4518a and 4518b.
[0168] In this embodiment, a connecting terminal electrode 4515 is
formed using the same conductive film as the first electrode layer
4517 included in the light-emitting element 4511. A terminal
electrode 4516 is formed using the same conductive film as the
source and drain electrode layers included in the thin film
transistors 4509 and 4510.
[0169] The connecting terminal electrode 4515 is electrically
connected to a terminal included in the FPC 4518a through an
anisotropic conductive film 4519.
[0170] As the second substrate located in the direction in which
light is extracted from the light-emitting element 4511 needs to
have a light-transmitting property. In that case, a light
transmitting material such as a glass plate, a plastic plate, a
polyester film, or an acrylic film is used.
[0171] As the filler 4507, an ultraviolet curable resin or a
thermosetting resin can be used, in addition to an inert gas such
as nitrogen or argon. For example, PVC (polyvinyl chloride),
acrylic, polyimide, an epoxy resin, a silicon resin, PVB (polyvinyl
butyral), or EVA (ethylene vinyl acetate) can be used. In this
embodiment, nitrogen is used for the filler 4507.
[0172] In addition, if needed, optical films, such as a polarizer,
a circular polarizer (including an elliptical polarizer), a
retarder plate (a quarter-wave plate, a half-wave plate), a color
filter, and the like, may be provided on a projection surface of
the light-emitting element, as appropriate. Further, the polarizing
plate or the circulary polarizing plate may be provided with an
anti-reflection film. For example, an anti-glare treatment which
can diffuse reflected light in the depression/projection of the
surface, and reduce glare can be performed.
[0173] The signal line driver circuits 4503a and 4503b and the
scanning line driver circuits 4504a and 4504b may be mounted as a
driver circuit formed by using a single-crystal-semiconductor film
or polycrystalline semiconductor film over a substrate separately
prepared. In addition, only the signal line driver circuit or part
thereof, or the scanning line driver circuit or part thereof may be
separately formed to be mounted. This embodiment is not limited to
the structure shown in FIGS. 18A and 18B.
[0174] Through this process, a highly reliable light emitting
display device (display pane 1) as a semiconductor device can be
manufactured.
[0175] Through this, the light-transmitting transistor or the
light-transmitting capacitor element can be formed in the pixel
portion by employing this embodiment to form a display device.
Therefore, even if the transistor or the capacitor element is
provided in a pixel, aperture ratio can be made high. Accordingly,
a display device with high luminance can be manufactured. Further,
since a wiring for connecting the transistor and an element (e.g.,
another transistor) or a wiring for connecting a capacitor element
and an element (e.g., another capacitor element) can be formed by
using a material with low resistivity and high conductivity, the
distortion of the waveform of a signal and a voltage drop due to
wiring resistance can be suppressed.
[0176] This embodiment can be implemented in combination with the
structure of another embodiment.
Embodiment 2
[0177] An element substrate of one embodiment of this invention and
a display device or the like including the element substrate can be
used for an active matrix display panel. That is, one embodiment of
the invention can be carried out in all electronic devices in which
they are incorporated into a display portion.
[0178] Examples of such electronic devices include cameras such as
a video camera and a digital camera, a head-mounted display (a
goggle-type display), a car navigation system, a projector, a car
stereo, a personal computer, and a portable information terminal
(e.g., a mobile computer, a cellular phone, and an e-book reader).
Examples of these devices are illustrated in FIGS. 15A to 15C.
[0179] FIG. 15A illustrates a television device. The television
device can be completed by incorporating a display panel in a
chassis, as illustrated in FIG. 15A. A main screen 2003 is formed
using the display panel, and other accessories such as a speaker
portion 2009 and an operation switch are provided. In such a
manner, a television device can be completed.
[0180] As shown in FIG. 15A, a display panel 2002 using a display
element is incorporated into a housing 2001, as shown in FIG. 15A.
In addition to reception of general TV broadcast with the use of a
receiver 2005, communication of information can also be performed
in one way (from a transmitter to a receiver) or in two ways
(between a transmitter and a receiver or between receivers) by
connection to a wired or wireless communication network through a
modem 2004. The television device can be operated by using a switch
built in the housing or a remote control unit 2006. Also, a display
portion 2007 for displaying output information may also be provided
in the remote control unit.
[0181] Further, the television device may include a sub-screen 2008
formed using a second display panel for displaying channels, sound
volume, and the like, in addition to the main screen 2003. In this
structure, the main screen 2003 may be formed with a liquid crystal
display panel which has an excellent viewing angle, and the
sub-screen 2008 may be formed with a light-emitting display panel
by which display is possible with low power consumption.
Alternatively, when reduction in power consumption is prioritized,
a structure may be employed in which the main screen 2003 is formed
using a light-emitting display panel, the sub-screen is formed
using a light-emitting display panel, and the sub-screen can be
turned on and off.
[0182] By employing one embodiment of this invention, a pixel with
a high aperture ratio can be formed, whereby a display device with
high luminance can be manufactured. Accordingly, low power
consumption in a television device can be achieved.
[0183] FIG. 15B illustrates one mode of a cellular phone 2301. The
cellular phone 2301 includes a display portion 2302, operation
switches 2303, and the like. In the display portion 2302, by
employing one embodiment of this invention, a pixel with a high
aperture ratio can be formed, whereby a display device with high
luminance can be manufactured. Accordingly, low power consumption
in a cell phone can be achieved.
[0184] In addition, a portable computer illustrated in FIG. 15C
includes a main body 2401, a display portion 2402, and the like. By
employing one embodiment of this invention, a pixel with a high
aperture ratio can be formed, whereby a display device with high
luminance can be manufactured. Accordingly, low power consumption
in a computer can be achieved.
[0185] FIGS. 16A to 16C show one example of the structure of a
smartphone. For example, an element substrate including a thin film
transistor and a display device including the element substrate,
which are shown in Embodiment 1 are applied to a display portion of
the smartphone. FIG. 16A is a front view, FIG. 16B is a rear view,
and FIG. 16C is a development view. The smartphone has two housings
1111 and 1002. The smartphone has both functions of a mobile phone
and of a portable information terminal, incorporates a computer,
and enables various kinds of data processing in addition to
telephone conversation, and is also referred to as a
smartphone.
[0186] The cell phone has two housings the 1111 and 1002. The
housing 1111 includes a display portion 1101, a speaker 1102, a
microphone 1103, operation keys 1104, a pointing device 1105, a
front camera lens 1106, a jack 1107 for an external connection
terminal, an earphone terminal 1008, and the like, while the
housing 1002 includes a keyboard 1201, an external memory slot
1202, a rear camera 1203, a light 1204, and the like. In addition,
an antenna is incorporated in the housing 1111.
[0187] Further, in addition to the above-described structure, the
smartphone may incorporate a non-contact IC chip, a small size
memory device, or the like.
[0188] In FIG. 16A, the housing 1111 and the housing 1002 overlap
each other. The housing 1111 and the housing 1002 slid to be
developed from the state in FIG. 16A to the state in FIG. 16C. In
the display portion 1101, the display device described in the above
embodiment can be incorporated, and a display direction can be
changed depending on a use mode. Because the front camera lens 1106
is provided in the same plane as the display portion 1101, the
smartphone can be used as a videophone. A still image and a moving
image can be taken by the rear camera 1203 and the light 1204 by
using the display portion 1101 as a viewfinder.
[0189] The speaker 1102 and the microphone 1103 can be used for
videophone, recording, playback, and the like without being limited
to verbal communication. With the use of operation keys 1104,
making and receiving calls, inputting simple information related to
e-mails or the like, scrolling of the screen, moving the cursor and
the like are possible.
[0190] If much information is needed to be treated, such as
documentation, use as a portable information terminal, and the
like, the use of the keyboard 1201 is convenient. The housings 1111
and 1002 overlapping each other can slide and be developed as
illustrated in FIG. 16C, so that the smartphone can be used as an
information terminal. Also, a cursor can be used with smooth
operation by using the keyboard 1201 and the pointing device 1105.
To the jack 1107 for an external connection terminal, an AC adaptor
and various types of cables such as a USB cable can be connected,
and charging and data communication with a personal computer or the
like are possible. Moreover, a large amount of data can be stored
by inserting a storage medium into the external memory slot 1202
and can be moved.
[0191] In the rear surface of the housing 1002 (FIG. 16B), the rear
camera lens 1203 and the light 1204 are provided, and a still image
and a moving image can be taken by using the display portion 1101
as a finder.
[0192] Further, the smartphone may have an infrared communication
function, a USB port, a function of receiving one segment
television broadcast, a non-contact IC chip, an earphone jack, or
the like, in addition to the above-described functions and
structures.
[0193] By employing the display device described in the above
embodiment, a smartphone with improved image quality can be
provided.
[0194] Note that this embodiment can be combined with any of the
other embodiment as appropriate.
[0195] This application is based on Japanese Patent Application
serial no. 2008-130162 filed with Japan Patent Office on May 16,
2008, the entire contents of which are hereby incorporated by
reference.
* * * * *