U.S. patent application number 13/725498 was filed with the patent office on 2013-05-30 for semiconductor device with side-junction and method for fabricating the same.
This patent application is currently assigned to SK HYNIX INC.. The applicant listed for this patent is SK HYNIX INC.. Invention is credited to Bong-Seok JEON, Seung-Joon JEON, Jin-Ku LEE, Mi-Ri LEE, Jae-Geun OH.
Application Number | 20130134508 13/725498 |
Document ID | / |
Family ID | 44957020 |
Filed Date | 2013-05-30 |
United States Patent
Application |
20130134508 |
Kind Code |
A1 |
OH; Jae-Geun ; et
al. |
May 30, 2013 |
SEMICONDUCTOR DEVICE WITH SIDE-JUNCTION AND METHOD FOR FABRICATING
THE SAME
Abstract
A method for fabricating a semiconductor device includes forming
a plurality of bodies that are each isolated from another by a
trench and each include a diffusion barrier region with a sidewall
exposed to the trench, forming a doped layer gap-filling the
trench, forming a sidewall junction at the exposed sidewall of the
diffusion barrier region by annealing the doped layer, and forming
a conductive line coupled with the sidewall junction to fill the
trench.
Inventors: |
OH; Jae-Geun; (Gyeonggi-do,
KR) ; JEON; Seung-Joon; (Gyeonggi-do, KR) ;
LEE; Jin-Ku; (Gyeonggi-do, KR) ; LEE; Mi-Ri;
(Gyeonggi-do, KR) ; JEON; Bong-Seok; (Gyeonggi-do,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SK HYNIX INC.; |
Gyeonggi-do |
|
KR |
|
|
Assignee: |
SK HYNIX INC.
Gyeonggi-do
KR
|
Family ID: |
44957020 |
Appl. No.: |
13/725498 |
Filed: |
December 21, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12939677 |
Nov 4, 2010 |
8354342 |
|
|
13725498 |
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Current U.S.
Class: |
257/334 |
Current CPC
Class: |
H01L 27/10876 20130101;
H01L 29/66666 20130101; H01L 27/10885 20130101; H01L 29/7827
20130101; H01L 21/743 20130101; H01L 29/1608 20130101; H01L 29/7813
20130101; H01L 29/41741 20130101; H01L 29/165 20130101 |
Class at
Publication: |
257/334 |
International
Class: |
H01L 29/78 20060101
H01L029/78 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 7, 2010 |
KR |
10-2010-0065264 |
Claims
1-17. (canceled)
18. A semiconductor device, comprising: a plurality of bodies that
are each isolated from another by a trench and each include a
diffusion barrier region with a sidewall exposed to the trench; an
insulation layer through which a sidewall contact is formed to
expose the exposed sidewall of the diffusion barrier region; a
sidewall junction formed at the exposed sidewall of the diffusion
barrier region; a buried bit line coupled with the sidewall
junction and filled a portion of the trench; a plurality of pillars
formed over the plurality of the bodies, respectively; and a
vertical word line extending along a sidewall of each of the
pillars in a direction crossing the buried bit line.
19. The semiconductor device of claim 18, wherein the diffusion
barrier region comprises an interstitial impurity.
20. The semiconductor device of claim 18, wherein the diffusion
barrier region is doped with carbon.
21. The semiconductor device of claim 18, wherein the sidewall
junction is doped with phosphorus (P).
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application claims priority of Korean Patent
Application No. 10-2010-0065264, filed on Jul. 7, 2010, which is
incorporated herein by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] Exemplary embodiments of the present invention relate to a
method for fabricating a semiconductor device including a
side-junction, and a method for fabricating the semiconductor
device.
[0003] When cells having a vertical transistor structure employ
buried bit lines (BBL), each buried bit line BBL may be adjacent to
two cells. For a cell to be driven by a buried bit line BBL, a
One-Side-Contact (OSC) process may be performed for forming a
contact in an active region while insulating another active region.
Hereafter, the OSC process will be simply referred to as a sidewall
contact process. In a cell of a vertical transistor structure
formed by using the sidewall contact process, each active region
includes a body isolated by a trench and a pillar formed over the
body. A buried bit line BBL fills a trench between bodies, and a
word line (or a vertical gate) is disposed adjacent to the sidewall
of a pillar and extended in a direction crossing a buried bit line
BBL. The word line forms a channel in a vertical direction.
[0004] According to the sidewall contact process, a portion of a
sidewall of the body is exposed to couple an active region with a
buried bit line BBL. Then, a junction is formed by implanting or
diffusing a dopant into the exposed portion of the sidewall of the
body. The buried bit line BBL and the body are electrically coupled
through the junction. Since the junction is formed on just one
sidewall of the body, the junction is referred to as a One-Side
Junction (OSJ).
[0005] When a diffusion barrier is formed between the buried bit
line BBL and the side junction, agglomeration may be caused. To
address such a concern, a method of forming a one-side junction by
directly forming a doped polysilicon layer without forming a
diffusion barrier has been researched.
[0006] FIGS. 1A to 1C are cross-sectional views illustrating a
conventional method for forming a semiconductor device by using a
sidewall contact process.
[0007] Referring to FIG. 1A, a plurality of bodies 103 isolated by
trenches 102 are formed over a substrate 101. A hard mask pattern
104 is formed over the bodies 103. The hard mask pattern 104
functions as an etch barrier during the formation of active
regions.
[0008] An insulation layer is formed on both sidewalls of each body
103, the surface of the substrate 101 between the bodies 103, and
the surface of the hard mask pattern 104. The insulation layer
includes a liner oxide layer 105 and a liner nitride layer 106.
[0009] A sidewall contact 107 is formed by removing a portion of
the insulation layer. The sidewall contact 107 is a one-side
contact which exposes a portion of just one sidewall of a body
103.
[0010] Referring to FIG. 1B, a doped polysilicon layer 108 is
formed over the substrate structure to gap-fill sidewall contacts
107 and the trenches 102. Here, the doped polysilicon layer 108 is
doped with a dopant for forming a sidewall contact. For example,
the dopant doping the doped polysilicon layer 108 may be an N-type
impurity, such as phosphorus (P).
[0011] Referring to FIG. 1C, the doped polysilicon layer 108 is
planarized and etched back. As a result, the doped polysilicon
layer pattern which is obtained from the planarization and
etch-back processes gap-fills a portion of each trench 102 to the
degree that the doped polysilicon layer pattern has a height to at
least contact the sidewall.
[0012] Subsequently, an annealing process 109 is performed. Here,
the dopant doping the doped polysilicon layer pattern is diffused
into the sidewall of the body 103 exposed by the sidewall so as to
form a sidewall junction 110.
[0013] However, when the dopant is excessively diffused during the
process of forming the doped polysilicon layer pattern, a floating
body 111 may be generated to increase a potential and cause a
concern with respect to the operation of a cell transistor, such as
a threshold voltage drop.
SUMMARY OF THE INVENTION
[0014] An exemplary embodiment of the present invention is directed
to a semiconductor device which prevents a floating body from being
generated due to excessive diffusion of a sidewall junction, and a
method for fabricating the semiconductor device.
[0015] In accordance with an exemplary embodiment of the present
invention, a method for fabricating a semiconductor device
includes: forming a plurality of bodies that are each isolated from
another by a trench and each include a diffusion barrier region
with a sidewall exposed to the trench; forming a doped layer
gap-filling the trench; forming a sidewall junction at the exposed
sidewall of the diffusion barrier region by annealing the doped
layer; and forming a conductive line coupled with the sidewall
junction to fill the trench.
[0016] In accordance with another exemplary embodiment of the
present invention, a method for fabricating a semiconductor device
includes: forming a diffusion barrier layer by performing an ion
implantation process onto a substrate; forming a plurality of
bodies that are each isolated from another by a trench and each
include a diffusion barrier region of the diffusion barrier layer
with a sidewall of the diffusion barrier region being exposed to
the trench by etching the substrate to a depth below the diffusion
barrier region; forming an insulation layer through which a
sidewall contact is formed to expose the sidewall of the diffusion
barrier region; forming a doped layer gap-filling the trench;
forming a sidewall junction at the exposed sidewall of the
diffusion barrier region by annealing the doped layer; and forming
a buried bit line coupled with the sidewall junction to fill the
trench.
[0017] In accordance with yet another exemplary embodiment of the
present invention, a semiconductor device: a plurality of bodies
that are each isolated from another by a trench and each include a
diffusion barrier region with a sidewall exposed to the trench; an
insulation layer through which a sidewall contact is formed to
expose the exposed sidewall of the diffusion barrier region; a
sidewall junction formed at the exposed sidewall of the diffusion
barrier region; a buried bit line coupled with the sidewall
junction and arranged to fill the trench; a plurality of pillars
formed over the plurality of the bodies, respectively; and a
vertical word line extending along a sidewall of each of the
pillars in a direction crossing the buried bit line.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] FIGS. 1A to 1C are cross-sectional views illustrating a
conventional method for forming a semiconductor device by using a
sidewall contact process.
[0019] FIG. 2 is a cross-sectional view illustrating a
semiconductor device in accordance with an exemplary embodiment of
the present invention.
[0020] FIGS. 3A to 3G are cross-sectional views describing a method
for forming the semiconductor device shown in FIG. 2.
[0021] FIGS. 4A to 4K are cross-sectional views illustrating a
method of forming a sidewall contact in accordance with an
exemplary embodiment of the present invention.
[0022] FIGS. 5A to 5E are cross-sectional views illustrating a
semiconductor device fabrication method after the formation of
buried bit lines.
DESCRIPTION OF SPECIFIC EMBODIMENTS
[0023] Exemplary embodiments of the present invention will be
described below in more detail with reference to the accompanying
drawings. The present invention may, however, be embodied in
different forms and should not be construed as limited to the
embodiments set forth herein. Rather, these embodiments are
provided so that this disclosure will be thorough and complete, and
will fully convey the scope of the present invention to those
skilled in the art. Throughout the disclosure, like reference
numerals refer to like parts throughout the various figures and
embodiments of the present invention.
[0024] The drawings are not necessarily to scale and in some
instances, proportions may have been exaggerated in order to
clearly illustrate features of the embodiments. When a first layer
is referred to as being "on" a second layer or "on" a substrate, it
not only refers to a case where the first layer is formed directly
on the second layer or the substrate but also a case where a third
layer exists between the first layer and the second layer or the
substrate.
[0025] FIG. 2 is a cross-sectional view illustrating a
semiconductor device in accordance with an exemplary embodiment of
the present invention.
[0026] Referring to FIG. 2, a plurality of bodies 201 each include
a diffusion barrier region 23A of a diffusion barrier layer and a
sidewall exposing the diffusion barrier region 23A. Then, through
an insulation layer (for example, 29A and 27A), a sidewall contact
exposing a portion of a sidewall and covering the bodies 201 is
formed. A sidewall junction 38 is formed in the inside of the
diffusion barrier region 23A of the exposed portion of the
sidewall. Subsequently, a conductive line coupled with the sidewall
junction 38 is formed between the plurality of the bodies 201. The
conductive line includes a buried bit line 39. The buried bit line
39 may be a metal bit line formed of a metal layer.
[0027] Here, the plurality of the bodies 201 isolated by trenches
26 are formed over a substrate 21. According to an example, the
substrate 21 includes a silicon substrate. The plurality of the
bodies 201 are formed by etching the substrate 21. When the
substrate 21 includes a silicon substrate, the plurality of the
bodies 201 may include silicon bodies as well. The plurality of the
bodies 201 are extended from the surface of the substrate 21 in a
vertical direction, Each of the plurality of the bodies 201 is a
region where a channel region, a source region and a drain region
of a vertical transistor is formed. Each body 201 includes two
sidewalls. The body 201 is referred to as an active body.
[0028] A hard mask pattern 24 is formed in the upper portion of the
body 201. The hard mask pattern 24 functions as an etch barrier
when the body 201 is formed. The hard mask pattern 24 includes a
dielectric material layer such as an oxide layer and a nitride
layer. According to an example, a nitride layer such as a silicon
nitride layer is used as the hard mask pattern 24.
[0029] An insulation layer (for example, 29A and 27A) is formed on
both sidewalls of the body 201, the surface of a trench 26 between
bodies 201, and the surface of the hard mask pattern 24. The
insulation layer according to an example includes a liner oxide
layer pattern 27A and a liner nitride layer pattern 29A. The liner
oxide layer pattern 27A is formed on both sidewalls of the body 201
and the surface of the trench 26. The liner nitride layer pattern
29A is formed on the surface of a portion of the liner oxide layer
pattern 27A.
[0030] A sidewall contact (`35` in FIG. 4K) is formed by removing a
portion of the insulation layer (29A and 27A). The sidewall contact
35 is a one-side contact which selectively exposes a portion of
just one sidewall of the body 201. The sidewall contact 35 includes
a linear opening which has a shape of line extended along the
sidewall of the body 201.
[0031] The above-described insulation layer (29A and 27A) provides
the sidewall contact 35 which exposes a portion of the sidewall of
the body 201. A method for forming the sidewall contact 35 will be
described later on with reference to FIGS. 4A to 4K.
[0032] Referring to FIG. 2, a sidewall junction 38 is formed in the
inside of the diffusion barrier region 23A. With the diffusion
barrier region 23A, the sidewall junction 38 is prevented from
being excessively diffused.
[0033] The diffusion barrier region 23A includes an interstitial
impurity such as carbon. The sidewall junction 38 may include
phosphorus (P).
[0034] FIGS. 3A to 3G are cross-sectional views describing a method
for forming the semiconductor device shown in FIG. 2.
[0035] Referring to FIG. 3A, a first impurity is ion-implanted into
a substrate 21. The substrate 21 includes a silicon substrate. A
first impurity is implanted into a region reserved for a junction
through ion implantation 22 to form a diffusion barrier layer
23.
[0036] The ion implantation is performed using carbon as the first
impurity. Since the substrate 21 is a silicon substrate, carbon
becomes an interstitial impurity within the substrate 21. When the
dopant for doping a doped polysilicon layer to be formed later in
the semiconductor device fabrication process is phosphorus (P), the
phosphorus (P) is diffused through interstitial sites. Here, if
carbon is already implanted and diffused into the interstitial
sites in, for example, the diffusion barrier layer 23, the
excessive diffusion of the phosphorus (P) may be prevented.
Meanwhile, carbon may have substantially no effect on the
conductivity of a sidewall junction.
[0037] When carbon is on-implanted, the diffusion barrier region 23
becomes silicon carbide (SiC).
[0038] Referring to FIG. 3B, a hard mask pattern 24 is formed over
the substrate 21. Here, the hard mask pattern 24 is formed by
forming a hard mask layer and then etching the hard mask layer
using a photoresist pattern 25 as an each barrier. The photoresist
pattern 25 is a line-and-space pattern and it may be also called a
buried bit line (BBL) mask. The hard mask pattern 24 may be formed
of an oxide layer, a nitride layer, or stacked layers of the two.
According to an example, a nitride layer such as a silicon nitride
is used as the hard mask pattern 24.
[0039] Referring to FIG. 3C, the photoresist pattern 25 is stripped
and a plurality of trenches 26 are formed by using the hard mask
pattern 24 as an etch barrier and etching the substrate 21 to a
desired depth. Due to the plurality of the trenches 26, a plurality
of bodies 201 are formed over the substrate 21. The plurality of
the bodies 201 are extended from the surface of the substrate 21 in
a vertical direction. Each body 201 has two sidewalls. In a
vertical cell structure, a body 201 is an active region where a
channel region, a source region, and a drain region of a transistor
are formed.
[0040] The sidewalls of the body 201 may have a vertical profile as
shown. The etch process for forming the plurality of bodies 201 and
the plurality of the trenches 26 may be a dry etch process using
plasma.
[0041] As described above, when the plurality of the bodies 201 are
formed by etching the substrate 21, each of the plurality of the
bodies 201 has a sidewall which exposes a diffusion barrier region
23A. Since the substrate 21 is a silicon substrate, the plurality
of the bodies 201 may be referred to as silicon bodies.
[0042] Referring to FIG. 3D, a sidewall contact 35 is formed to
expose a portion of a sidewall of a body 201, that is, a portion of
the diffusion barrier region 23A.
[0043] The sidewall contact 35 is formed of an insulation layer
that includes a liner oxide layer pattern 27A and a liner nitride
layer pattern 29A. The liner oxide layer pattern 27A is formed on
both sidewalls of the body 201 and the surface of the substrate 21.
The liner nitride layer pattern 29A is formed on the surface of a
portion of the liner oxide layer pattern 27A. The sidewall contact
35 is formed by removing a portion of the insulation layer. The
sidewall contact 35 is a one-side contact which selectively exposes
a portion of a sidewall of the body 201. The sidewall contact 35
includes a linear opening which is formed in the shape of line.
[0044] The sidewall contact 35 exposes a portion of a sidewall of
the body 201 (for example, the diffusion barrier region 23A) at a
region reserved for a junction through the insulation layer. A
method for forming the sidewall contact 5 will be described in
detail later with reference to FIGS. 4A to 4K.
[0045] Referring to FIG. 3E, a doped layer is formed to gap-fill
the plurality of the trenches 26 between the plurality of the
bodies 201. The doped layer includes an impurity for forming a
junction implanted therein. The doped layer may include a doped
polysilicon layer 36. When the doped polysilicon layer 36 has
excellent step coverage, it may gap-fill the plurality of the
trenches 26 without voids. Therefore, the doped polysilicon layer
36 used in forming a junction has excellent dose uniformity, where
the doped polysilicon layer 36 is doped with a dopant for forming a
junction. The dopant for the doped polysilicon layer 36 may be an
N-type impurity such as phosphorus (P). The doped polysilicon layer
36 may be formed through a Chemical Vapor Deposition (CVD) method.
The dopant doping the doped polysilicon layer 36 includes a dose
ranging from approximately 1.times.10.sup.15 to approximately
1.times.10.sup.17 atoms/cm.sup.2. While the doped polysilicon layer
36 is illustrated as an example, another material doped with an
impurity for forming a junction may be used according to another
example. For instance, an oxide layer such as phosphor silicate
glass (PSG) may be used.
[0046] Referring to FIG. 3F, the doped polysilicon layer 36 is
planarized and etched back. The doped polysilicon layer 36 acquired
after the planarization and etch-back processes is referred to as a
doped polysilicon layer pattern 36A, hereafter. As a result, the
doped polysilicon layer pattern 36A is formed to gap-fill a portion
of each trench 26, where the doped polysilicon layer pattern 36A
has a sufficient height to cover the opening on a sidewall of the
body 201 for the sidewall contact 35. As described above, the
dopant may be prevented from being diffused into the regions other
than the sidewall contact during a subsequent annealing process
when the planarization and etch-back processes are performed and
the height of the doped polysilicon layer pattern 36A is
decreased.
[0047] Subsequently, an annealing process 37 is performed. Here,
the dopant doping the doped polysilicon layer pattern 36A is
diffused into the diffusion barrier region 23A which is exposed by
the sidewall contact 35 so as to form a sidewall junction 38. When
the dopant doping the doped polysilicon layer pattern 36A is an
N-type impurity, the sidewall junction 38 becomes an N-type
junction.
[0048] The annealing process 37 may be a furnace annealing process,
a rapid thermal annealing process or a combination of both. The
annealing process 37 may be performed at a temperature ranging from
approximately 750.degree. to approximately 1200.degree. C.
According to an example, the sidewall junction 38 has a doping
concentration of approximately at least 1.times.10.sup.20
atoms/cm.sup.3.
[0049] As described above, since the sidewall junction 38 is formed
by forming the doped polysilicon layer pattern 36A and performing a
thermal diffusion through the annealing process 37, the depth of
the sidewall junction 38 may be controlled to be shallow and the
concentration of the dopant may be controlled easily.
[0050] The carbon implanted into the diffusion barrier region 23A
may suppress the dopant (for example, N-type impurity such as
phosphorus) of the sidewall junction 38 from being diffused
excessively during the annealing process 37. As a result,
generation of floating bodies may be prevented/reduced. Such a
structure that suppresses the excessive diffusion of the sidewall
junction 38 is referred to as a body-tied structure.
[0051] Referring to FIG. 3G, the doped polysilicon layer pattern
36A is removed. Here, the doped polysilicon layer pattern 36A may
be removed through a wet etch process or a dry etch process. In
case of the dry etch process, chemical compounds based on hydrogen
bromide (HBr) or chlorine (Cl.sub.2) are used, where oxygen
(O.sub.2) nitrogen (N.sub.2), helium (He) or argon (Ar) are added.
In case of the wet etch process, a cleaning solution having a high
selectivity between a nitride layer and an oxygen layer is
used.
[0052] Subsequently, a conductive line electrically connected to
the sidewall junction 38, for example, a buried bit line 39, is
formed as follows.
[0053] First, a bit line conductive layer (for example, 39) is
formed over the substrate structure to gap-fill the plurality of
the trenches 26. The bit line conductive layer may be a metal layer
such as a titanium nitride layer (TiN), a tungsten (W) layer, or
stacked layers of both. When the bit line conductive layer is a
metal layer, an Ohmic contact is needed between the sidewall
junction 38 and the metal layer. Here, the sidewall junction 38 may
be formed of silicon and the Ohmic contact may include a metal
silicide such as titanium silicide.
[0054] Subsequently, a planarization process and an etch-back
process are sequentially performed to remove a portion of the bit
line conductive layer. As a result of the planarization process and
the etch-back process, the buried bit line 39 electrically
connected to the sidewall junction 38 is formed. The buried bit
line 39 is a metallic bit line formed of the metal layer.
[0055] FIGS. 4A to 4K are cross-sectional views illustrating a
method of forming the sidewall contact in accordance with an
exemplary embodiment of the present invention. The drawings
illustrate how the sidewall contact is formed after the process of
FIG. 3C.
[0056] Referring to FIG. 4A, a liner oxide layer 27 is formed as an
insulation layer over the substrate structure including the
plurality of the bodies 201. The liner oxide layer 27 may include
an oxide layer such as a silicon oxide layer.
[0057] A first gap-fill layer 2 gap-filling the plurality of the
trenches 26 is formed. The first gap fill layer 28 may be
polysilicon layer or amorphous silicon.
[0058] Referring to FIG. 4B, the first gap-fill layer 28 is
planarized until the surface of the hard mask pattern 24 is
exposed. The planarization of the first gap-fill layer 28 may be
performed through a Chemical Mechanical Polishing (CMP) process.
Subsequently, an etch-back process is performed. The first gap-fill
layer 28 acquired after the etch-back process is referred to as a
first gap-fill layer pattern 28A. After the etch-back process, the
first gap-fill layer pattern 28A forms a part of a first recess R1.
During the CMP process, the liner oxide layer 27 over the hard mask
pattern 24 may be polished, where the liner oxide layer pattern 27A
may remain covering both sidewalls of each trench 26 and the hard
mask pattern 24. The liner oxide layer pattern 27A covers the
bottom of the trench 26 as well.
[0059] Subsequently, the liner oxide layer pattern 27A is thinned
by performing a wet etch process.
[0060] Referring to FIG. 4C, a liner nitride layer 29 is formed of
an insulation layer over the resulting substrate structure
including the first gap-fill layer pattern 28A. The liner nitride
layer 29 may be a nitride layer such as a silicon nitride
layer.
[0061] Referring to FIG. 4D, the liner nitride layer 29 is etched.
As a result, a liner nitride layer pattern 29A is formed.
Subsequently, the first gap-fill layer pattern 28A is recessed to a
desired depth by using the liner nitride layer pattern 29A as an
etch barrier. As a result, a second recess R2 is formed. The first
gap-fill layer pattern forming a part of the second recess R2 is
referred to as a first gap-fill layer pattern 28B forming a second
recess.
[0062] Referring to FIG. 4E, a metal nitride layer for forming
spacers 30 is conformally formed over the resulting substrate
structure including the second recess R2. Subsequently, spacers 30
are formed by performing a spacer etch process on the metal nitride
layer. The spacers 30 are formed on both sidewalls of each body
201, that is, on both sidewalls of the second recess R2. The
spacers 30 may be formed of titanium nitride (TiN).
[0063] A second gap-fill layer 31 gap-filling the second recess R2
with the spacers 30 formed therein is formed. The second gap-fill
layer 31 may be an oxide layer or a spin-on dielectric (SOD)
layer.
[0064] Referring to FIG. 4F, the second gap-fill layer 31 is
planarized and etched back. The second gap-fill layer 31 acquired
after the planarization and etch-back processes is referred to as a
second gap-fill layer pattern 31A.
[0065] Subsequently, an etch barrier 32 is formed over the
resulting substrate structure including the second gap-fill layer
pattern 31A. The etch barrier 32 may be an undoped polysilicon
layer.
[0066] Referring to FIG. 4G, a tilt ion implantation process 33 is
performed. The tilt ion implantation process 33 is a process of
ion-implanting a dopant at a desired slanted angle. The dopant is
ion-implanted into a portion of the etch barrier 32.
[0067] The tilt ion implantation process 33 is performed at a
desired angle, which ranges from approximately 5.degree. to
approximately 30.degree.. Here, a shadow is formed by the hard mask
pattern 24 in implanting ion beams. As a result, although a portion
of the etch barrier 32 becomes doped, the remainder of the etch
barriers remains undoped, According to an example the dopant
ion-implanted is a P-type dopant, e.g., boron, and a dopant source
for ion-implanting boron is BF.sub.2. As a result, a portion of the
etch barrier 32 adjacent to the left side of the hard mask pattern
24 remains undoped.
[0068] Due to the tilt ion implantation process 33 of the dopant, a
portion of the etch barrier 32 formed over the hard mask pattern 24
and a portion adjacent to the right side of the hard mask pattern
24 is referred to as a doped etch barrier 32A. The other portion of
the etch barrier layer 32 which is not doped with the dopant is
referred to as an undoped etch barrier 32B.
[0069] Referring to FIG. 4H, the undoped etch barrier 328 is
removed. Here, the polysilicon layer, which is used as the etch
barrier, has different etch rates according to whether or not it is
doped with the dopant. In particular, the undoped polysilicon layer
into which the dopant is not ion implanted is wet-etched rapidly.
Therefore, the undoped polysilicon layer is selectively etched
using a chemical having a high selectivity which is capable of
wet-etching, for example, the undoped polysilicon layer but not the
doped polysilicon layer. The undoped etch barrier 32B is removed
through the wet-etch process or a wet cleaning process.
[0070] After the undoped etch barrier 32B is removed, only the
doped etch barrier 32A remains.
[0071] Referring to FIG. 4I, just one of the spacers 30 is removed
through a wet-etch process. Accordingly, a spacer referred to as a
first spacer 30A remains.
[0072] Referring to FIG. 43, a cleaning process is performed to
expose a portion of a sidewall of each body 201.
[0073] The cleaning process may be a wet cleaning process. The wet
cleaning process may be performed using hydrogen fluoride (HF) or a
buffered oxide etchant (BOE). With the wet cleaning process, a
portion of the liner oxide layer pattern 27A is removed so as to
form a sidewall contact 35. When the sidewall contact 35 is formed,
the second gap-fill layer pattern 31A is removed as well.
[0074] As described above, the hard mask pattern 24, the liner
oxide layer pattern 27A, and the liner nitride layer pattern 29A
are collectively referred to as an `insulation layer.` Here, the
insulation layer provides the sidewall contact 35 which exposes a
portion of a sidewall of the body 201.
[0075] Referring to FIG. 4K, the first spacer 30A and the doped
etch barrier 32A are removed. When the doped etch barrier 32A is
removed, the first gap-fill layer pattern 28B forming the second
recess R2, is simultaneously removed as well.
[0076] FIGS. 5A to 5E are cross-sectional views illustrating a
semiconductor device fabrication method after the formation of
buried bit lines. FIGS. 5A to 5E present cross-sectional views
obtained by cutting the semiconductor device along lines B-B' and
C-C' shown in FIG. 3G which run perpendicular to the page of FIG.
3.
[0077] Referring to FIG. 5A, a first inter-layer dielectric layer
41 is formed. The first inter-layer dielectric layer 41 is
planarized until the surface of the hard mask pattern 24 is
exposed.
[0078] Referring to FIG. 55 word line trenches 42 are formed. A
photoresist layer pattern, which is not illustrated in the drawing,
is used to form the word line trenches 42. After forming the
photoresist pattern, the first inter-layer dielectric layer 41 is
etched to a desired depth by using the photoresist pattern as an
etch barrier. When the first inter-layer dielectric layer 41 is
etched, the hard mask pattern 24 and the bodies 201 are etched to a
desired depth, too. As a result of the etch process, body pattern
201B and pillars 201A are formed. The body pattern 201B and the
pillars 201A become active regions. The body pattern 201B is a
portion where the sidewall junction 38 is formed, and it is formed
in the shape of line extended in the same direction as the buried
bit line 39 is laid. The pillars 201A are extended in a vertical
direction over the body pattern 201B. The pillars 201A are formed
on a cell basis. The remaining thickness R1 of the first
inter-layer dielectric layer 41 functions as an isolation layer
between the buried bit line 39 and the vertical word line.
[0079] Referring to FIG. 5C, a word line conductive layer 44 is
formed to gap-fill the word line trenches (refer to the reference
numeral `42` of FIG. 5B). Subsequently, a planarization process and
an etch-back process are performed so that the word line conductive
layer 44 remains at a desired height to gap-fill a portion of each
word line trench 42. A gate insulation layer 43 is formed before
the word line conductive layer 44 is formed.
[0080] Referring to FIG. 5D, spacers 45 are formed by depositing a
nitride layer and then performing an etch-back process on the
nitride layer. The word line conductive layer 44 is etched by using
the spacers 45 that are etched to form a spacer pattern. As a
result, vertical word lines 44A each of which is adjacent to the
sidewalls of a corresponding pillar 201A is formed. Here, the
vertical word lines 44A also function as vertical gates, too.
According to another exemplary embodiment of the present invention,
after the circular vertical gates that each surround a
corresponding pillar 201A are formed, vertical word lines 44A
coupling adjacent vertical gates may be formed. The vertical word
lines 44A are formed in a direction crossing the buried bit lines
39.
[0081] Referring to FIG. 5E, a second inter-layer dielectric layer
46 is formed over the resulting substrate structure including the
vertical word lines 44A.
[0082] The upper portion of each pillar 201A is exposed by
performing a storage node contact etch process. Subsequently,
storage node contact plugs (SNC) 48 are formed. Before the storage
node contact plugs 48 are formed, drains 47 may be formed by
performing an ion-implantation. As a result, the drains 47, the
sidewall junctions 38, and the vertical word lines 44A constitute a
vertical channel transistor. The vertical word lines 44A form
vertical channels between the drains 47 and the sidewall junctions
38. The sidewall junctions 38 become the source for vertical
transistors.
[0083] Storage nodes 49 are formed over the storage node contact
plugs 48. The storage nodes 49 may have a cylindrical shape.
According to another exemplary embodiment of the present invention,
the storage nodes 49 may have a pillar shape or a concave shape.
Subsequently, a dielectric layer and an upper electrode are
formed.
[0084] Exemplary embodiments of the present invention may prevent a
floating body from being generated by forming a diffusion barrier
region in advance in a region where a sidewall junction is to be
formed and suppressing excessive diffusion of the sidewall
junction.
[0085] While the present invention has been described with respect
to exemplary embodiments, it will be apparent to those skilled in
the art that various changes and modifications may be made without
departing from the spirit and scope of the invention as defined in
the following claims.
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