U.S. patent application number 13/640037 was filed with the patent office on 2013-05-23 for light-emitting diode chip with current spreading layer.
The applicant listed for this patent is Elmar Baur, Clemens Hofmann, Martin Hohenadler, Petrus Sundgren. Invention is credited to Elmar Baur, Clemens Hofmann, Martin Hohenadler, Petrus Sundgren.
Application Number | 20130126920 13/640037 |
Document ID | / |
Family ID | 44123194 |
Filed Date | 2013-05-23 |
United States Patent
Application |
20130126920 |
Kind Code |
A1 |
Sundgren; Petrus ; et
al. |
May 23, 2013 |
Light-Emitting Diode Chip with Current Spreading Layer
Abstract
A light-emitting diode chip includes a semiconductor layer
sequence having a phosphide compound semiconductor material. The
semiconductor layer sequence contains a p-type semiconductor
region, an n-type semiconductor region, and an active layer
arranged between the p-type semiconductor region and the n-type
semiconductor region. The active region serves to emit
electromagnetic radiation. The n-type semiconductor region faces a
radiation exit area of the light-emitting diode chip, and the
p-type semiconductor region faces a carrier of the light-emitting
diode chip. A current spreading layer having a thickness of less
than 500 nm is arranged between the carrier and the p-type
semiconductor region. The current spreading layer has one or a
plurality of p-doped Al.sub.xGa.sub.1-xAs layers with
0.5<x.ltoreq.1.
Inventors: |
Sundgren; Petrus;
(Regensburg, DE) ; Baur; Elmar; (Regensburg,
DE) ; Hohenadler; Martin; (Regensburg, DE) ;
Hofmann; Clemens; (Neutraubling, DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Sundgren; Petrus
Baur; Elmar
Hohenadler; Martin
Hofmann; Clemens |
Regensburg
Regensburg
Regensburg
Neutraubling |
|
DE
DE
DE
DE |
|
|
Family ID: |
44123194 |
Appl. No.: |
13/640037 |
Filed: |
April 8, 2011 |
PCT Filed: |
April 8, 2011 |
PCT NO: |
PCT/EP2011/055566 |
371 Date: |
February 5, 2013 |
Current U.S.
Class: |
257/94 |
Current CPC
Class: |
H01L 2924/0002 20130101;
H01L 33/30 20130101; H01L 33/14 20130101; H01L 33/40 20130101; H01L
33/486 20130101; H01L 2924/0002 20130101; H01L 33/02 20130101; H01L
31/112 20130101; H01L 2924/00 20130101; H01L 33/60 20130101; H01L
33/305 20130101; H01L 33/382 20130101 |
Class at
Publication: |
257/94 |
International
Class: |
H01L 33/30 20060101
H01L033/30 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 12, 2010 |
DE |
10 2010 014 667.6 |
Claims
1-15. (canceled)
16. A light-emitting diode chip comprising a semiconductor layer
sequence comprising a phosphide compound semiconductor material,
wherein the semiconductor layer sequence comprises: a p-type
semiconductor region, wherein the p-type semiconductor region faces
a carrier of the light-emitting diode chip; an n-type semiconductor
region, wherein the n-type semiconductor region faces a radiation
exit area of the light-emitting diode chip; an active layer
arranged between the p-type semiconductor region and the n-type
semiconductor region, the active layer configured to emit
electromagnetic radiation; and a current spreading layer having a
thickness of less than 500 nm arranged between the carrier and the
p-type semiconductor region, the current spreading layer comprising
a p-doped Al.sub.xGa.sub.1-xAs layer, where 0.5<x.ltoreq.1.
17. The light-emitting diode chip according to claim 16, wherein
the current spreading layer has a thickness of less than 300
nm.
18. The light-emitting diode chip according to claim 16, wherein
0.6.ltoreq.x.ltoreq.0.8.
19. The light-emitting diode chip according to claim 16, wherein
the current spreading layer comprises a plurality of p-doped
Al.sub.xGa.sub.1-xAs layers.
20. The light-emitting diode chip according to claim 16, wherein
the current spreading layer has a dopant concentration of more than
1*10.sup.19 cm.sup.-3.
21. The light-emitting diode chip according to claim 16, wherein
the current spreading layer has a dopant concentration of at least
5*10.sup.19 cm.sup.-3.
22. The light-emitting diode chip according to claim 16, wherein
the current spreading layer is doped with carbon.
23. The light-emitting diode chip according to claim 16, further
comprising an encapsulation layer overlying the current spreading
layer including side flanks of the current spreading layer.
24. The light-emitting diode chip according to claim 23, wherein
the encapsulation layer contains silicon oxide, silicon nitride,
zinc oxide or a metal.
25. The light-emitting diode chip according to claim 16, wherein
the current spreading layer has oblique side flanks that are
inclined at an angle of between 20.degree. and 70.degree. inclusive
with respect to a layer plane of the current spreading layer.
26. The light-emitting diode chip according to claim 16, wherein a
trench is formed in the current spreading layer.
27. The light-emitting diode chip according to claim 26, wherein
the trench is filled with silicon nitride, silicon oxide, zinc
oxide or a metal.
28. The light-emitting diode chip according to claim 26, wherein
the trench extends into the p-type semiconductor region.
29. The light-emitting diode chip according to claim 16, further
comprising a further layer composed of
In.sub.xGa.sub.yAl.sub.1-x-yAs, where 0.ltoreq.x.ltoreq.1,
0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1, adjoining the current
spreading layer, the further layer having a smaller band gap and a
lower dopant concentration than the current spreading layer.
30. The light-emitting diode chip according to claim 16, wherein a
growth substrate is detached from the semiconductor layer sequence
and the carrier is different than a growth substrate of the
semiconductor layer sequence.
31. The light-emitting diode chip according to claim 30, wherein
the carrier comprises silicon, molybdenum or germanium.
32. A light-emitting diode chip comprising a semiconductor layer
sequence comprising a phosphide compound semiconductor material,
wherein the semiconductor layer sequence comprises: a p-type
semiconductor region, wherein the p-type semiconductor region faces
a carrier of the light-emitting diode chip; an n-type semiconductor
region, wherein the n-type semiconductor region faces a radiation
exit area of the light-emitting diode chip; an active layer
arranged between the p-type semiconductor region and the n-type
semiconductor region, the active layer configured to emit
electromagnetic radiation; a current spreading layer having a
thickness of less than 500 nm arranged between the carrier and the
p-type semiconductor region, the current spreading layer having a
p-doped Al.sub.xGa.sub.1-xAs layer with 0.5<x.ltoreq.1; and a
further layer composed of In.sub.xGa.sub.yAl.sub.1-x-yAs, where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1,
adjoining the current spreading layer, the further layer having a
smaller band gap and a lower dopant concentration than the current
spreading layer.
33. A light-emitting diode chip comprising a semiconductor layer
sequence comprising a phosphide compound semiconductor material,
wherein the semiconductor layer sequence comprises: a p-type
semiconductor region, wherein the p-type semiconductor region faces
a carrier of the light-emitting diode chip; an n-type semiconductor
region, wherein the n-type semiconductor region faces a radiation
exit area of the light-emitting diode chip; an active layer
arranged between the p-type semiconductor region and the n-type
semiconductor region, the active layer configured to emit
electromagnetic radiation; and a current spreading layer having a
thickness of less than 500 nm arranged between the carrier and the
p-type semiconductor region, the current spreading layer having one
or a plurality of p-doped Al.sub.xGa.sub.1-xAs layers with
0.5<x.ltoreq.1, wherein the current spreading layer has oblique
side flanks, that are inclined at an angle of between 20.degree.
and 70.degree. inclusive with respect to a layer plane of the
current spreading layer.
Description
[0001] This patent application is a national phase filing under
section 371 of PCT/EP2011/055566, filed Apr. 8, 2011, which claims
the priority of German patent application 10 2010 014 667.6, filed
Apr. 12, 2010, each of which is incorporated herein by reference in
its entirety.
TECHNICAL FIELD
[0002] The present invention relates generally to optical devices
and, in particular embodiments, to a light-emitting diode chip with
a current spreading layer.
BACKGROUND
[0003] In light-emitting diode chips, a comparatively thick current
spreading layer composed of a semiconductor material having good
electrical conductivity is generally arranged between the
electrical contact and the light-emitting semiconductor layer
sequence, in order to obtain as uniform a current flow as possible
through the active layer.
[0004] By way of example, the document U.S. Pat. No. 6,426,518 B1
discloses a light-emitting diode chip wherein the light-emitting
region is based on a phosphide compound semiconductor. A current
spreading layer composed of p-AlGaAs is arranged between the
electrical contact and the light-emitting region. The current
spreading layer has a thickness of between 1 .mu.m and 10
.mu.m.
[0005] It has been found that with such comparatively thick current
spreading layers composed of AlGaAs, a good current spreading layer
can be obtained, but on the other hand a not inconsiderable
proportion of the emitting radiation is also absorbed. The
absorption by a thick current spreading layer is non-negligible in
particular when the emitted radiation has a short wavelength and/or
the proportion of aluminum in the current spreading layer is low.
Furthermore, it has been found that an increase in the portion of
aluminum in the current spreading layer increases the sensitivity
of the light-emitting diode chip to moisture.
SUMMARY OF THE INVENTION
[0006] In one aspect, the invention specifies a light-emitting
diode chip which comprises a current spreading layer having low
optical absorption and at the same time low sensitivity to
moisture.
[0007] In accordance with at least one embodiment, the
light-emitting diode chip contains a semiconductor layer sequence
comprising a phosphide compound semiconductor material. In
particular, the semiconductor layer sequence comprises a plurality
of layers composed of In.sub.xGa.sub.yAl.sub.1-x-yP with
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1.
[0008] The semiconductor layer sequence contains, in particular, a
p-type phosphide compound semiconductor region, an n-type phosphide
compound semiconductor region and an active layer arranged between
the p-type phosphide compound semiconductor region and the n-type
phosphide compound semiconductor region and serving for emitting
electromagnetic radiation.
[0009] The active layer can be embodied e.g., as a pn junction, as
a double heterostructure, as a multiple heterostructure, as a
single quantum well structure or multiple quantum well structure.
In this case, the designation quantum well structure encompasses
any structure in which charge carriers experience a quantization of
their energy states as a result of confinement. In particular, the
designation quantum well structure does not include any indication
about the dimensionality of the quantization. It therefore
encompasses, inter alia, quantum wells, quantum wires or quantum
dots and any combination of these structures.
[0010] In the case of the light-emitting diode chip, the n-type
semiconductor region faces a radiation exit area of the
light-emitting diode chip, and the p-type semiconductor region
faces a carrier of the light-emitting diode chip. Preferably, the
light-emitting diode chip is a so-called thin-film light-emitting
diode chip, wherein a growth substrate used for the growth of the
semiconductor layer sequence is detached from the light-emitting
diode chip. The original growth substrate can be detached, in
particular, from the n-type semiconductor region of the
semiconductor layer sequence. At the side of the p-type
semiconductor region opposite the original growth substrate, the
light-emitting diode chip is preferably connected to the carrier,
for example by means of a soldering connection. In this case, the
carrier is different than a growth substrate of the semiconductor
layers sequence and preferably comprises silicon, molybdenum or
germanium. In contrast to conventional LEDs, wherein generally the
n-type semiconductor region faces the substrate and the p-type
semiconductor region faces the radiation exit area, in the case of
the light-emitting diode chip the p-type semiconductor region faces
the carrier and the n-type semiconductor region faces the radiation
exit area.
[0011] A current spreading layer having a thickness of less than
500 nm is arranged between the carrier and the p-type semiconductor
region, said current spreading layer consisting of one or a
plurality of p-doped Al.sub.xGa.sub.1-xAs layer(s) with
0.5<x.ltoreq.1.
[0012] By virtue of the fact that the current spreading layer is
arranged between the carrier and the p-type semiconductor region,
it is better protected against oxidation and/or the action of
moisture than if it adjoined the ambient medium, in particular air,
at the radiation exit side of the light-emitting diode chip.
[0013] It has furthermore been found that a current spreading layer
having a thickness of less than 500 nm has lower sensitivity to
oxidation and/or moisture than comparatively thick current
spreading layers. This is possibly based on the fact that the
volume of an AlGaAS layer increases if the layer partly oxidizes.
In the case of the current spreading layer only having a thickness
of less than 500 nm, this effect is less pronounced than in the
case of a thicker layer.
[0014] Furthermore, the required growth time for the current
spreading layer is advantageously reduced by virtue of the small
thickness of the current spreading layer of less than 500 nm. Since
the growth of the current spreading layer takes place at elevated
temperatures, the reduction of the growth time also reduces the
diffusion of impurities from the adjacent semiconductor layer
sequence into the current spreading layer, for example the
diffusion of dopants such as Mg and Zn from the p-type
semiconductor region of the semiconductor layer sequence.
[0015] The small thickness of the current spreading layer of less
than 500 nm furthermore advantageously reduces the optical
absorption in the current spreading layer. Radiation emitted in the
active layer of the semiconductor layer sequence, which radiation
is firstly emitted in the direction of the current spreading layer
and the carrier, is therefore absorbed in the current spreading
layer to a lesser extent than in the case of a significantly
thicker current spreading layer. The radiation emitted in the
direction of the carrier is preferably reflected by a mirror layer
arranged on the carrier in the direction toward a radiation exit
side of the light-emitting diode chip.
[0016] The optical absorption in the current spreading layer is
therefore advantageously also comparatively low since the one or
the plurality of p-doped Al.sub.xGa.sub.1-xAs layers forming the
current spreading layer have a proportion of aluminum x>0.5. On
account of the comparatively large proportion of aluminum, the
current spreading layer has a comparatively large electronic band
gap which reduces the absorption of the radiation.
[0017] In one preferred configuration, the current spreading layer
has a thickness of less than 300 nm. This further improves the
stability of the layer with respect to oxidation and/or action of
moisture and reduces the optical absorption.
[0018] It is particularly advantageous if, for the proportion of
aluminum x in the current spreading layer 0.6.ltoreq.x.ltoreq.0.8
holds true. In particular, low optical absorption in the current
spreading layer can be obtained in this case.
[0019] The current spreading layer can be an individual layer
composed of Al.sub.xGa.sub.1-xAs or a plurality of partial layers
composed of Al.sub.xGa.sub.1-xAs. For the case where the current
spreading layer is composed of a plurality of partial layers, the
advantageous configurations of the current spreading layer as
described here and hereinafter apply to the totality of the partial
layers. In particular, the thickness of a current spreading layer
composed of a plurality of partial layers is overall less than 500
nm or particularly preferably even overall less than 300 nm.
[0020] The current spreading layer advantageously has a dopant
concentration of more than 1.times.10.sup.19 cm.sup.-3.
Particularly preferably, the dopant concentration in the current
spreading layer is at least 5.times.10.sup.19 cm.sup.-3. A high
electrical conductivity in the current spreading layer is
advantageously obtained as a result of a high dopant
concentration.
[0021] In one preferred configuration, the current spreading layer
comprises C as dopant. It has advantageously been found that high
dopant concentrations with good reproducibility can be obtained
with C as dopant in AlGaAs layers.
[0022] In a further preferred configuration, the current spreading
layer including its side flanks is provided with an encapsulation
layer. The encapsulation layer can contain, in particular, silicon
oxide, silicon nitride, a transparent conductive oxide such as, for
example, zinc oxide or a metal. In order also to be able to provide
the side flanks of the current spreading layer with an
encapsulation layer, the current spreading layer can be structured,
for example, before the encapsulation layer is applied. During the
structuring, by way of example, edge regions of the current
spreading layer can be removed, such that an encapsulation layer
subsequently applied by means of a coating method also covers the
side flanks of the current spreading layer. The encapsulation layer
further reduces, in particular, the sensitivity of the current
spreading layer toward environmental influences, in particular
toward oxidation and/or the action of moisture. It is possible for
the encapsulation layer to contain different materials in different
partial regions. By way of example, the encapsulation layer can be
formed from an electrically insulating material such as silicon
oxide or silicon nitride, for example, in partial regions, while it
is formed from an electrically conductive material such as zinc
oxide, for example, or from a metal in other regions. In this case,
the electrically conductive partial regions of the encapsulation
layer, serve in particular, for impressing current into the current
spreading layer.
[0023] In a further preferred configuration, the current spreading
layer has oblique side flanks, which are inclined by an angle of
between 20.degree. and 70.degree. inclusive with respect to the
layer plane of the current spreading layer. The coupling-out of
radiation from the optoelectronic component can be improved in this
way. In particular, the oblique side flanks of the current
spreading layer can function as microprisms by which radiation
emitted in the active layer, said radiation being emitted in the
direction of the carrier, is reflected toward the radiation exit
side of the light-emitting diode chip. It is possible for the
oblique side flanks to extend right into the phosphide compound
semiconductor layer sequence, such that one or a plurality of
layers of the semiconductor layer sequence also have oblique side
flanks.
[0024] In a further advantageous configuration, at least one trench
is formed in the current spreading layer. The at least one trench
is preferably filled with silicon nitride, silicon oxide, zinc
oxide or a metal. In the region of the trench of the current
spreading layer, the filling material directly adjoins the p-type
semiconductor region. Through the trench it is possible to define,
in a targeted manner, a current path through the semiconductor
layer sequence. It is advantageously also possible for the at least
one trench to extend right into the p-type phosphide compound
semiconductor region.
[0025] In a further advantageous configuration, at least one layer
composed of In.sub.xGa.sub.yAl.sub.1-x-yAs where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1 adjoins
the current spreading layer, and has a smaller band gap and a lower
dopant concentration than the current spreading layer. At the
interface between the current spreading layer and the layer having
the smaller band gap and lower dopant concentration, in this case a
bending of the band edges of the conduction band and of the valence
band respectively occurs, which leads to the formation of a
two-dimensional hole gas having a high conductivity. In this way,
regions having high charge carrier concentration and charge carrier
mobility can be produced in a targeted manner.
[0026] It is possible for the at least one AlGaAs layer in the
current spreading layer to contain a small proportion of one or a
plurality of further elements. The proportion of the one or of the
plurality of further elements in the current spreading layer is
less than 10% in this case. The one or the plurality of further
elements can be dopants, or small amounts of a further material of
the third or fifth main group of the periodic system.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The invention is explained in greater detail below on the
basis of exemplary embodiments in connection with FIGS. 1 to 5.
[0028] FIG. 1 shows a schematic illustration of a cross section
through a light-emitting diode chip in accordance with a first
exemplary embodiment;
[0029] FIG. 2 shows a schematic illustration of a cross section
through a light-emitting diode chip in accordance with a second
exemplary embodiment;
[0030] FIG. 3 shows a schematic illustration of a cross section
through a light-emitting diode chip in accordance with a third
exemplary embodiment;
[0031] FIG. 4 shows a schematic illustration of a cross section
through a light-emitting diode chip in accordance with a fourth
exemplary embodiment; and
[0032] FIG. 5 shows a schematic illustration of a cross section
through a light-emitting diode chip in accordance with a fifth
exemplary embodiment.
[0033] Identical or identically acting elements are provided with
the same reference signs in the figures. The sizes of the
individual elements and the size relationships of the elements
among one anther should not be regarded as true to scale.
DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
[0034] The thin-film light-emitting diode chip illustrated in FIG.
1 contains a semiconductor layer sequence 5 comprising a p-type
semiconductor region 2 and an n-type semiconductor region 4. An
active layer 3 is arranged between the p-type semiconductor region
2 and the n-type semiconductor region 4. The active layer 3
preferably has a single or multiple quantum well structure.
[0035] The semiconductor layer sequence 5 is based on a phosphide
compound semiconductor, that is to say that the semiconductor
layers contained in the semiconductor layer sequence 5 comprise, in
particular, In.sub.xGa.sub.yAl.sub.1-x-yP where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1. In
particular, the p-type semiconductor region 2, the active layer 3
and the n-type semiconductor region are formed from phosphide
compound semiconductor materials.
[0036] The light-emitting diode chip is a so-called thin-film LED,
wherein a growth substrate used for the growth of the semiconductor
layer sequence 5 has been detached from the semiconductor layer
sequence 5. In particular, the growth substrate can be detached
from the n-type semiconductor region 4, which now has the radiation
exit area 6 of the light-emitting diode chip. At a side opposite
the original growth substrate and the radiation exit area 6, the
light-emitting diode chip is connected to a carrier 7, which
preferably comprises silicon, germanium or molybdenum. In the case
of the thin-film light-emitting diode chip, therefore the n-type
semiconductor region 4 faces the radiation exit area 6 and the
p-type semiconductor region 2 faces the carrier 7.
[0037] A current spreading layer 1 is arranged between the carrier
7 and the p-type phosphide compound semiconductor region 2. The
current spreading layer 1 is a p-doped Al.sub.xGa.sub.1-xAs layer
where 0.5<x.ltoreq.1, which has a thickness of less than 500
nm.
[0038] Preferably, the thickness of the current spreading layer 1
is even only less than 300 nm. For the proportion of aluminum x in
the current spreading layer 1, 0.6.ltoreq.x.ltoreq.0.8 preferably
holds true.
[0039] The current spreading layer 1 adjoins an electrical contact
9 at least in partial regions at a side facing the carrier 7. At
least one further electrical contact 9 of the light-emitting diode
chip is arranged, for example, on the radiation exit side 6 of the
light-emitting diode chip, said radiation exit side being opposite
the carrier. The current spreading layer 1 preferably has a dopant
concentration of more than 1.times.10.sup.19 cm.sup.-3 and
particularly preferably of more than 5.times.10.sup.19 cm.sup.-3. A
high transverse conductivity of the current spreading layer 1 is
obtained in this way, such that a current flows through the
semiconductor layer sequence 5 comparatively homogeneously even
when the rear-side contact 9 is applied, for example, only to a
small central region of the current spreading layer 1.
[0040] On account of its small thickness of less than 500 nm or
preferably of less than 300 nm and on account of the high aluminum
content of more than 0.5, the current spreading layer 1 has
advantageously low optical absorption. Furthermore, it has been
found that such a thin current spreading layer 1 is less sensitive
to oxidation or the action of moisture than comparatively thick
conventional current spreading layers that typically have a
thickness of 1 um or more. Despite the small thickness, good
current spreading is obtained with the current spreading layer 1,
wherein it is advantageous if the current spreading layer 1 has a
dopant concentration of at least 1.times.10.sup.19 cm.sup.-3 and
particularly preferably of at least 5.times.10.sup.19
cm.sup.-3.
[0041] It is furthermore advantageous that the current spreading
layer 1 adjoining the p-type semiconductor region 2 is arranged
between the carrier 7 and the p-type semiconductor region 2 since
with this arrangement it is better protected against external
influences such as oxidation or moisture than if it adjoined the
ambient medium at the surface of the light-emitting diode chip.
[0042] It is possible for the current spreading layer 1 to be
composed of a plurality of partial layers (not illustrated) made of
Al.sub.xGa.sub.1-xAs where in each case 0.5<x.ltoreq.1, wherein
the partial layers can differ from one another for example in terms
of their dopant concentration and/or in terms of their aluminum
content. In this case, in the context of this application, the
totality of the partial layers is regarded as the current spreading
layer 1, such that, in particular, the total thickness of all the
partial layers is less than 500 nm and preferably less than 300 nm.
It is also conceivable for the current spreading layer 1 or the
partial layers of the current spreading layer to have small amounts
of additional materials, the proportion of which, however, overall
is less than 10%.
[0043] In order to protect the current spreading layer 1 even
better against external influences, said current spreading layer
preferably including its side flanks 11 is provided with an
encapsulation layer 8. The encapsulation layer 8 can comprise, in
particular, a transparent dielectric material such as, for example,
silicon nitride or silicon oxide. Alternatively, however, it is
also possible for the encapsulation layer 8 to comprise a
transparent conductive oxide such as, for example, zinc oxide or a
metal. Particularly in the case of an encapsulation layer 8
composed of a dielectric material, the electrical contact 9 for the
current spreading layer 1 can be arranged in a cutout of the
encapsulation layer 8.
[0044] A layer sequence 10 composed of a metal or a metal alloy is
arranged between the encapsulation layer 8, the electrical contact
layer 9 and the carrier 7. The metallic layers 10 can contain, for
example, a minor layer for reflecting the radiation emitted from
the active layer 3 in the direction of the carrier 7. Furthermore,
the metallic layers 10 can also comprise a solder layer for
connecting the light-emitting diode chip to the carrier 7.
[0045] The exemplary embodiment of a light-emitting diode chip as
illustrated in FIG. 2 differs from the exemplary embodiment in FIG.
1 in that the current spreading layer 1 has oblique side flanks 12.
The oblique side flanks 12 preferably form an angle of between
20.degree. and 70.degree. inclusive with the layer plane of the
current spreading layer 1. It has been found that the coupling-out
of radiation from the light-emitting diode chip can be improved by
means of the oblique side flanks 12 of the current spreading layer
1. On account of the difference in refractive index between the
current spreading layer 1 and the encapsulation layer 8, the
oblique side flanks 12 act as reflectors that can reflect radiation
in the direction toward the radiation exit area 6. In particular,
it is possible for the opposite oblique side flanks 12 of the
current spreading layer 1 to form a microprism. It is also possible
for the oblique side flanks 12 to extend right into the
semiconductor layer sequence 5 (not illustrated).
[0046] With regard to the further advantageous configurations, the
exemplary embodiment illustrated in FIG. 2 corresponds to the first
exemplary embodiment.
[0047] The exemplary embodiment of a light-emitting diode chip as
illustrated in FIG. 3 differs from the exemplary embodiment
illustrated in FIG. 1 in that the metallic layer sequence 10 in the
region of the side flanks of the light-emitting diode chip reaches
as far as the p-type semiconductor region 2. Consequently, the
current spreading layer 1 including its side flanks 11 is enclosed
by the encapsulation layer 8, and the encapsulation layer 8 is
enclosed by the metallic layer sequence 10. Particularly good
resistance of the current spreading layer 1 to oxidation or the
action of moisture is obtained in this way.
[0048] The exemplary embodiment illustrated in FIG. 3 furthermore
differs from the exemplary embodiment illustrated in FIG. 1 in that
an In.sub.xGa.sub.yAl.sub.1-x-yAs layer 14 where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1 adjoins
the current spreading layer 1, and has a lower dopant concentration
and a smaller band gap than the current spreading layer 1. The
layer 14 is preferably arranged between the current spreading layer
1 and the p-type semiconductor region 2. At the interface with the
more highly doped current spreading layer 1 the layer 14 forms a
potential well in which free charge carriers in the form of holes
accumulate. The holes form a so-called two-dimensional hole gas in
the layer 14. In this way, a particularly high transverse
conductivity is obtained in the layer 14.
[0049] In the case of the exemplary embodiment of a light-emitting
diode chip as illustrated in FIG. 4, two trenches 13 are formed in
the current spreading layer 1, into which the encapsulation layer 8
projects. That region of the current spreading layer 1 which is
arranged between the trenches 13 is electrically connected by means
of the electrical contact 9 and the metallic layer sequence 10. By
contrast, the edge regions 1a, 1b of the current spreading layer 1
are not electrically connected. Generation of radiation in the
regions of the semiconductor chip which are arranged below the
contacts 9 arranged in the edge regions on the radiation exit area
of the light-emitting diode chip is reduced in this way.
[0050] FIG. 5 illustrates a further exemplary embodiment of a
light-emitting diode chip wherein two trenches 13 are formed in the
current spreading layer 1. In the trenches, the metallic layer
sequence 10 extends right into the p-type semiconductor region 2.
The metallic layer sequence 10 is insulated from the current
spreading layer 1 outside the region of the contact 9 by the
encapsulation layer 8.
[0051] The invention is not restricted by the description on the
basis of the exemplary embodiments. Rather, the invention
encompasses any novel feature and also any combination of features,
which in particular includes any combination of features in the
patent claims, even if this feature or this combination itself is
not explicitly specified in the patent claims or exemplary
embodiments.
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