U.S. patent application number 13/300662 was filed with the patent office on 2013-05-23 for light emitting diode.
This patent application is currently assigned to FOXSEMICON INTEGRATED TECHNOLOGY, INC.. The applicant listed for this patent is KUO-CHENG CHANG. Invention is credited to KUO-CHENG CHANG.
Application Number | 20130126887 13/300662 |
Document ID | / |
Family ID | 48425949 |
Filed Date | 2013-05-23 |
United States Patent
Application |
20130126887 |
Kind Code |
A1 |
CHANG; KUO-CHENG |
May 23, 2013 |
LIGHT EMITTING DIODE
Abstract
An LED includes a seat and an LED chip. The seat includes a main
body, a first electrode protruding upwardly from the main body, and
a second electrode formed on the main body. The LED chip includes a
substrate, a first semiconductor layer disposed on the substrate, a
light-emitting layer disposed on the first semiconductor layer, a
second semiconductor layer disposed on the light-emitting layer,
and a third electrode fixed on the second semiconductor layer. The
first electrode extends through the substrate and electrically
connects with the first semiconductor layer, and the third
electrode electrically connects with the second electrode via a
wire.
Inventors: |
CHANG; KUO-CHENG; (Chu-Nan,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
CHANG; KUO-CHENG |
Chu-Nan |
|
TW |
|
|
Assignee: |
FOXSEMICON INTEGRATED TECHNOLOGY,
INC.
Chu-Nan
TW
|
Family ID: |
48425949 |
Appl. No.: |
13/300662 |
Filed: |
November 21, 2011 |
Current U.S.
Class: |
257/76 ; 257/94;
257/E33.014; 257/E33.016 |
Current CPC
Class: |
H01L 33/62 20130101;
H01L 2224/48247 20130101; H01L 2224/48091 20130101; H01L 2224/48091
20130101; H01L 33/486 20130101; H01L 2924/00014 20130101 |
Class at
Publication: |
257/76 ; 257/94;
257/E33.014; 257/E33.016 |
International
Class: |
H01L 33/02 20100101
H01L033/02 |
Claims
1. An LED (light emitting diode) comprising: a seat comprising a
main body, and a first electrode and a second electrode formed on
the main body; and an LED chip attached on the main body, the LED
chip comprising a substrate, a first semiconductor layer disposed
on the substrate, a light-emitting layer disposed on the first
semiconductor layer, a second semiconductor layer disposed on the
light-emitting layer, and a third electrode fixed on the second
semiconductor layer; wherein the first electrode extends through
the substrate and electrically connects with the first
semiconductor layer, and the third electrode electrically connects
with the second electrode.
2. The LED as described in claim 1, wherein a top face of the main
body is concaved downwardly to form a depression, and the
depression has a flat face on which the LED chip is attached.
3. The LED as described in claim 2, wherein the first electrode
protrudes upwardly from the face of the depression into the LED
chip.
4. The LED as described in claim 3, wherein the first electrode is
columnar.
5. The LED as described in claim 1, wherein the substrate of the
LED chip defines a through hole extending through the
substrate.
6. The LED as described in claim 5, wherein the first electrode
extends through the through hole of the substrate, and directly
connects with the first semiconductor layer.
7. The LED as described in claim 1, wherein the first electrode is
insulatingly spaced from the second electrode.
8. The LED as described in claim 1, wherein the seat further
comprises two electrical feet extending outwardly from two opposite
lateral sides of the main body, respectively.
9. The LED as described in claim 8, wherein the first electrode and
the second electrode electrically are connected to the two
electrical feet, respectively.
10. The LED as described in claim 1, wherein the LED chip is made
of a Group III-V semiconductor material, the first semiconductor
layer is an N-type semiconductor layer, and the second
semiconductor layer is a P-type semiconductor layer.
11. The LED as described in claim 1, wherein the substrate is made
of a material selected from a group consisting of sapphire, silicon
carbide, lithium aluminate, lithium gallate, silicon, gallium
nitride, zinc oxide, aluminum zinc oxide, gallium arsenide, gallium
phosphide, gallium antimonide, indium phosphide, indium arsenide,
zinc selenide, or metal.
12. The LED as described in claim 1, wherein the second electrode
electrically connects to the third electrode via a lead.
Description
BACKGROUND
[0001] 1. Technical Field
[0002] The disclosure relates to light emitting diodes (LEDs) and,
more particularly, relates to an improved LED having a single
lead.
[0003] 2. Description of Related Art
[0004] Presently, LEDs are preferred for use in non-emissive
display devices than CCFLs (cold cathode fluorescent lamp) due to
their high brightness, long lifespan, and wide color range.
[0005] A typical LED includes a seat, an LED chip disposed on the
seat and an encapsulation material encapsulating the LED chip. The
LED chip has two electrodes for being electrically connected to
outer electrodes formed on the seat. The two electrodes of the LED
chip are generally connected to the outer electrodes of the seat
via two leads, respectively. However, in assembly of the LED, the
lead, which is usually made of a golden wire, is so thin that it is
prone to be broken. Using the two leads raises the risk of failure
of the LED.
[0006] What is needed, therefore, is an LED which has a single
lead.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Many aspects of the disclosure can be better understood with
reference to the following drawings. The components in the drawings
are not necessarily drawn to scale, the emphasis instead being
placed upon clearly illustrating the principles of the disclosure.
Moreover, in the drawings, like reference numerals designate
corresponding parts throughout the several views.
[0008] FIG. 1 is an isometric, assembled view of an LED in
accordance with an embodiment of the disclosure.
[0009] FIG. 2 is an exploded view of the LED of FIG. 1.
[0010] FIG. 3 is an inverted, exploded view of the LED of FIG.
1.
DETAILED DESCRIPTION
[0011] Referring to FIG. 1, a light emitting diode (LED) in
accordance with an embodiment of the disclosure is illustrated. The
LED comprises a seat 10 and an LED chip 20 disposed on the seat
10.
[0012] Referring to FIGS. 2-3 also, the seat 10 comprises a main
body 12 and two electrical feet 14 extending outwardly from two
opposite lateral sides of the main body 12, respectively. A top
face of the main body 12 is concaved downwardly to form a
depression 120. The depression 120 has a flat face on which the LED
chip 20 is attached. The seat 10 further comprises a first
electrode 16 and a second electrode 18 formed on the flat face of
the depression 120. The first electrode 16 is insulatingly spaced
from the second electrode 18. The first electrode 16 and the second
electrode 18 electrically connect with the electrical feet 14,
respectively. The first electrode 16 is columnar and extends
perpendicularly and upwardly from the flat face of the depression
120. The first electrode 16 directly connects with the LED chip
20.
[0013] The LED chip 20 comprises a substrate 21, a first
semiconductor layer 22 disposed on the substrate 21, a
light-emitting layer 23 disposed on the first semiconductor layer
22, a second semiconductor layer 24 disposed on the light-emitting
layer 23, and a third electrode 25 fixed on the second
semiconductor layer 24. The third electrode 25 is connected to the
second electrode 18 via a lead 100. The lead 100 is made of a
golden wire. The substrate 21 is selected from sapphire, silicon
carbide, lithium aluminate, lithium gallate, silicon, gallium
nitride, zinc oxide, aluminum zinc oxide, gallium arsenide, gallium
phosphide, gallium antimonide, indium phosphide, indium arsenide,
zinc selenide, or metal. The substrate 21 defines a through hole
210 extending perpendicularly through the substrate 21 to expose a
part of the first semiconductor layer 22. The first electrode 16
correspondingly extends through the through hole 210 of the
substrate 21 and directly and electrically connects with the first
semiconductor layer 22. In the embodiment of this disclosure, the
LED chip 20 is made of a Group III-V semiconductor material, the
first semiconductor layer 22 is an N-type semiconductor layer, and
the second semiconductor layer 24 is a P-type semiconductor layer,
the light-emitting layer 23 is sandwiched between the N-type
semiconductor layer and the P-type semiconductor layer.
[0014] It is to be understood, however, that even though numerous
characteristics and advantages of various embodiments have been set
forth in the foregoing description, together with details of the
structures and functions of the embodiments, the disclosure is
illustrative only, and changes may be made in detail, especially in
matters of shape, size, and arrangement of parts within the
principles of the disclosure to the full extent indicated by the
broad general meaning of the terms in which the appended claims are
expressed.
* * * * *