U.S. patent application number 13/234498 was filed with the patent office on 2013-03-21 for platinum-containing constructions, and methods of forming platinum-containing constructions.
This patent application is currently assigned to MICRON TECHNOLOGY, INC.. The applicant listed for this patent is Andrew Carswell, Chet E. Carter, Andrey V. Zagrebelny. Invention is credited to Andrew Carswell, Chet E. Carter, Andrey V. Zagrebelny.
Application Number | 20130069237 13/234498 |
Document ID | / |
Family ID | 47879913 |
Filed Date | 2013-03-21 |
United States Patent
Application |
20130069237 |
Kind Code |
A1 |
Zagrebelny; Andrey V. ; et
al. |
March 21, 2013 |
PLATINUM-CONTAINING CONSTRUCTIONS, AND METHODS OF FORMING
PLATINUM-CONTAINING CONSTRUCTIONS
Abstract
Some embodiments include constructions which have
platinum-containing structures. In some embodiments, the
constructions may have a planarized surface extending across the
platinum-containing structures and across metal oxide. In some
embodiments, the constructions may have a planarized surface
extending across the platinum-containing structures, across a first
material retaining the platinum-containing structures, and across
metal oxide liners along sidewalls of the platinum-containing
structures and directly between the platinum-containing structures
and the first material. Some embodiments include methods of forming
platinum-containing structures. In some embodiments, first material
is formed across electrically conductive structures, and metal
oxide is formed across the first material. Openings are formed to
extend through the metal oxide and the first material to the
electrically conductive structures. Platinum-containing material is
formed within the openings and over the metal oxide.
Chemical-mechanical polishing is utilized to form a planarized
surface extending across the platinum-containing material and the
metal oxide.
Inventors: |
Zagrebelny; Andrey V.;
(Boise, ID) ; Carter; Chet E.; (Boise, ID)
; Carswell; Andrew; (Boise, ID) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Zagrebelny; Andrey V.
Carter; Chet E.
Carswell; Andrew |
Boise
Boise
Boise |
ID
ID
ID |
US
US
US |
|
|
Assignee: |
MICRON TECHNOLOGY, INC.
Boise
ID
|
Family ID: |
47879913 |
Appl. No.: |
13/234498 |
Filed: |
September 16, 2011 |
Current U.S.
Class: |
257/769 ;
257/E21.585; 257/E23.168; 438/672 |
Current CPC
Class: |
H01L 21/3212 20130101;
H01L 21/76831 20130101; H01L 23/53242 20130101; H01L 2924/0002
20130101; H01L 21/283 20130101; H01L 23/53295 20130101; H01L
21/7684 20130101; H01L 2924/00 20130101; H01L 21/76829 20130101;
H01L 29/45 20130101; H01L 45/16 20130101; H01L 2924/0002
20130101 |
Class at
Publication: |
257/769 ;
438/672; 257/E23.168; 257/E21.585 |
International
Class: |
H01L 23/535 20060101
H01L023/535; H01L 21/768 20060101 H01L021/768 |
Claims
1. A construction, comprising: a dielectric stack comprising metal
oxide over a first material; platinum-containing structures
extending into the dielectric stack, the platinum-containing
structures having sidewall surfaces along the metal oxide and along
the first material; and a planarized surface extending across the
platinum-containing structures and the metal oxide.
2. The construction of claim 1 further comprising a plurality of
electrically conductive structures under the first material; and
wherein the platinum-containing structures are directly against the
electrically conductive structures.
3. The construction of claim 1 wherein the metal oxide has a
thickness of less than or equal to about 10 .ANG..
4. The construction of claim 1 wherein the sidewall surfaces of the
platinum-containing structures directly contact the first
material.
5. The construction of claim 1 further comprising liners of the
metal oxide directly between the sidewall surfaces of the
platinum-containing structures and the first material.
6. The construction of claim 1 wherein the planarized surface has a
root mean square roughness across the platinum of less than or
equal to about 50 .ANG..
7. The construction of claim 1 wherein the metal oxide comprises
one or more transition metals.
8. The construction of claim 1 wherein the metal oxide comprises
one or more of aluminum oxide, hafnium oxide, zirconium oxide and
titanium oxide.
9. The construction of claim 1 wherein the metal oxide consists of
aluminum oxide.
10. The construction of claim 1 wherein the first material
comprises silicon dioxide or silicon nitride.
11. A construction, comprising: a first material;
platinum-containing structures extending into the first material;
metal oxide liners along sidewall surfaces of the
platinum-containing structures and directly between said sidewall
surfaces and the first material; and a planarized surface extending
across the platinum-containing structures, the first material and
the metal oxide liners.
12. The construction of claim 11 further comprising a plurality of
electrically conductive structures under the first material; and
wherein the platinum-containing structures directly against the
electrically conductive structures.
13. The construction of claim 12 wherein the electrically
conductive structures are supported by a semiconductor base.
14. The construction of claim 11 wherein the metal oxide comprises
one or more transition metals.
15. The construction of claim 11 wherein the metal oxide comprises
one or more of aluminum oxide, hafnium oxide, zirconium oxide and
titanium oxide.
16. The construction of claim 11 wherein the metal oxide consists
of aluminum oxide.
17. The construction of claim 16 wherein the first material
comprises silicon dioxide.
18. A method of forming a plurality of platinum-containing
structures, comprising: forming a first material across a plurality
of electrically conductive structures; forming metal oxide across
the first material; forming a plurality of openings to extend
through the metal oxide and the first material to the electrically
conductive structures; forming platinum-containing material within
the openings and over the metal oxide; and utilizing
chemical-mechanical polishing to form a planarized surface
extending across the platinum-containing material and the metal
oxide.
19. The method of claim 18 wherein the metal oxide comprises one or
more of aluminum oxide, hafnium oxide, zirconium oxide and titanium
oxide.
20. The method of claim 18 wherein the metal oxide consists of
aluminum oxide.
21. A method of forming a plurality of platinum-containing
structures, comprising: forming a first material across a plurality
of electrically conductive structures; forming metal oxide across
the first material; forming a plurality of openings to extend
through the metal oxide and the first material to the electrically
conductive structures; forming platinum-containing material within
the openings and over the metal oxide; and utilizing
chemical-mechanical polishing to remove the metal oxide and form a
planarized surface extending across the platinum-containing
material and the first material.
22. The method of claim 21 wherein the metal oxide comprises a
thickness of from about 5 .ANG. to about 10 .ANG..
23. A method of forming a plurality of platinum-containing
structures, comprising: forming a first material across a plurality
of electrically conductive structures; forming a plurality of
openings to extend through the first material to the electrically
conductive structures; forming metal oxide across the first
material and within the openings, the metal oxide within the
openings lining sidewalls and bottoms of the openings; etching the
metal oxide to remove the metal oxide from over the first material
and from across the bottoms of the openings while leaving liners of
the metal oxide along the sidewalls of the openings; forming
platinum-containing material within the openings and directly
against the metal oxide liners; and utilizing chemical-mechanical
polishing to form a planarized surface extending across the
platinum-containing material, the first material and the metal
oxide liners.
24. The method of claim 23 wherein the metal oxide consists of
aluminum oxide.
25. A method of forming a plurality of platinum-containing
structures, comprising: forming a first material across a plurality
of electrically conductive structures; forming a plurality of
openings to extend through the first material to the electrically
conductive structures; forming metal oxide across the first
material and within the openings, the metal oxide lining sidewalls
of the openings to narrow the openings, and the metal oxide forming
an expanse across regions of the first material between the
openings; forming platinum-containing material within the narrowed
openings and over the metal oxide; and utilizing
chemical-mechanical polishing to form a planarized surface
extending across the platinum-containing material and across the
metal oxide expanse.
26. The method of claim 25 wherein the metal oxide consists of
aluminum oxide.
27. A method of forming a plurality of platinum-containing
structures, comprising: forming a first material across a plurality
of electrically conductive structures; forming a plurality of
openings to extend through the first material to the electrically
conductive structures; forming metal oxide across the first
material and within the openings, the metal oxide lining sidewalls
of the openings to narrow the openings, and the metal oxide forming
an expanse across regions of the first material between the
openings; forming platinum-containing material within the openings
and directly over the metal oxide expanse; and utilizing
chemical-mechanical polishing to remove the metal oxide expanse and
form a planarized surface extending across the platinum-containing
material, the first material and segments of the metal oxide lining
sidewalls of the openings.
28. The method of claim 27 wherein the metal oxide consists of
aluminum oxide.
Description
TECHNICAL FIELD
[0001] Platinum-containing constructions, and methods of forming
platinum-containing constructions.
BACKGROUND
[0002] Platinum may have application for utilization in
semiconductor constructions; and, for instance, may have
application in integrated circuitry and/or micro-electro-mechanical
systems (MEMS).
[0003] Platinum is a noble metal, and thus non-reactive relative to
numerous materials commonly utilized in semiconductor
constructions. Such non-reactivity can be beneficial. For instance,
some memory cells utilize oxygen-containing programmable materials
between a pair of electrically conductive electrodes (such memory
cells may be utilized in, for example, resistive random-access
memory [RRAM]). Unfortunately, the programmable materials can
problematically react with many of the commonly-available
conductive materials. However, the utilization of platinum in the
electrodes can alleviate, or even eliminate, problematic reaction
with the programmable materials.
[0004] Difficulties are encountered in forming platinum-containing
structures, in that the non-reactivity of platinum can make the
platinum difficult to pattern. It would be desirable to develop new
methods for patterning platinum-containing structures, and it would
be desirable for such new methods to be suitable for utilization in
the fabrication of semiconductor constructions.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] FIGS. 1-4 are diagrammatic, cross-sectional views of a
construction illustrating process stages of an example embodiment
method.
[0006] FIG. 5 is a diagrammatic, cross-sectional view of the
construction of FIG. 1 shown at a process stage subsequent to that
of FIG. 3, and alternative to that of FIG. 4.
[0007] FIGS. 6-11 are diagrammatic, cross-sectional views of a
construction illustrating process stages of another example
embodiment method.
[0008] FIGS. 12-14 are diagrammatic, cross-sectional views of a
construction illustrating process stages of another example
embodiment method. The process stage of FIG. 12 may follow that of
FIG. 7 in some embodiments.
[0009] FIG. 15 is a diagrammatic, cross-sectional view of the
construction of FIG. 12 shown at a process stage subsequent to that
of FIG. 13, and alternative to that of FIG. 14.
DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
[0010] In some embodiments, platinum-containing material is formed
along metal oxide, and subsequently the platinum-containing
material is subjected to chemical-mechanical polishing (CMP). The
utilization of the metal oxide may lead to reduced surface
roughness across the platinum relative to processes which do not
utilize the metal oxide. For instance, the utilization of the metal
oxide may enable the chemical-mechanical polished platinum to have
a surface roughness of less than 50 .ANG. (as measured as the root
mean square roughness by atomic force microscopy), whereas omission
of the metal oxide may lead to the chemical-mechanical polished
platinum having a surface roughness of at least about 100 .ANG. (as
measured as the root mean square roughness by atomic force
microscopy). Also, the utilization of the metal oxide may improve
retention of the platinum-containing material within openings in a
semiconductor construction as compared to processes which do not
utilize the metal oxide.
[0011] Any suitable metal oxide may be utilized. The term "metal"
is used herein to refer to traditional metals, and not to
semiconductors (for instance, silicon). In some embodiments, the
metal oxide may comprise one or more transition metals; and in some
embodiments the metal oxide may comprise, consist essentially of,
or consist of one or more of aluminum oxide, hafnium oxide,
zirconium oxide and titanium oxide.
[0012] Example embodiments are described with reference to FIGS.
1-15.
[0013] Referring to FIG. 1, a construction 10 comprises an
electrically insulative material 12 supporting a plurality of
electrically conductive structures 14-17.
[0014] The electrically insulative material 12 may comprise any
suitable composition or combination of compositions, and in some
embodiments may comprise one or more of silicon nitride, silicon
dioxide, and any of various doped glasses (for instance,
borophosphosilicate glass, phosphosilicate glass, fluorosilicate
glass, etc.). The insulative material 12 may be supported over a
semiconductor base (not shown). Such base may comprise, for
example, monocrystalline silicon. If the electrically insulative
material is supported by a semiconductor base, the combination of
the electrically insulative material 12 and the underlying
semiconductor base may be referred to as a semiconductor substrate,
or as a portion of a semiconductor substrate. The terms
"semiconductive substrate," "semiconductor construction" and
"semiconductor substrate" mean any construction comprising
semiconductive material, including, but not limited to, bulk
semiconductive materials such as a semiconductive wafer (either
alone or in assemblies comprising other materials), and
semiconductive material layers (either alone or in assemblies
comprising other materials). The term "substrate" refers to any
supporting structure, including, but not limited to, the
semiconductor substrates described above. In some embodiments, the
insulative material 12 may be over a semiconductor construction
which comprises a semiconductor base and one or more levels of
integrated circuitry. In such embodiments, the levels of integrated
circuitry may comprise, for example, one or more of refractory
metal materials, barrier materials, diffusion materials, insulator
materials, etc.
[0015] The electrically conductive structures 14-17 may be lines
extending in and out of the page relative to the cross-sectional
view of FIG. 1. Such lines may correspond to access/sense lines;
and may, for example, correspond to wordlines or bitlines in some
embodiments.
[0016] The electrically conductive structures 14-17 comprise
electrically conductive material 18. Such electrically conductive
material may comprise any suitable composition or combination of
compositions; and in some embodiments may comprise, consist
essentially of or consist of one or more of various metals (for
instance, tungsten, titanium, copper, etc.), metal-containing
substances (for instance, metal nitride, metal silicide, metal
carbide, etc.) and conductively-doped semiconductor materials (for
instance, conductively-doped silicon, conductively-doped germanium,
etc.).
[0017] A material 20 extends over the conductive structures 14-17,
and in some embodiments the material 20 may be referred to as a
"first material" to distinguish material 20 from other materials
formed subsequently to material 20. The first material 20 may
comprise a dielectric material; and in some embodiments may
comprise, consist essentially of, or consist of silicon dioxide or
silicon nitride.
[0018] A metal oxide 22 is formed over the first material 20. The
metal oxide may be a dielectric metal oxide, and may comprise any
of the metal oxide compositions discussed above (for instance, may
comprise, consist essentially of, or consist of one or more of
aluminum oxide, hafnium oxide, zirconium oxide and titanium oxide).
The metal oxide may be formed utilizing any suitable processing;
including, for example, one or more of atomic layer deposition
(ALD), physical vapor deposition (PVD) and chemical vapor
deposition (CVD). The metal oxide may be less than or equal to
about 10 .ANG. thick; and may, for example, have a thickness of
from about 5 .ANG. to about 10 .ANG.,
[0019] Although a single homogeneous first material 20 is between
the metal oxide and the conductive structures 14-17 in the shown
embodiment, in other embodiments there may be multiple materials
between the metal oxide and the conductive structures.
[0020] The metal oxide 22 and first material 20 together form a
stack 24, and in some embodiments such stack may be referred to as
a dielectric stack.
[0021] Referring to FIG. 2, openings 26-29 are etched through the
dielectric stack 24 and to upper surfaces of the conductive
structures 14-17, respectively. The openings are shown to have
substantially vertical sidewall surfaces. In other embodiments, the
openings may have more tapered sidewall surfaces. The verticality
of the sidewall surfaces of the openings may depend upon, among
other things, the aspect ratios of the openings, the composition of
first material 20, and the chemistry utilized during the etch of
such openings.
[0022] The openings 26-29 may be formed with any suitable
processing. For instance, a mask (not shown) may be formed over the
top of stack 24 to define locations of openings 26-29, one or more
etches may be utilized to transfer a pattern from the mask through
stack 24 to form the openings, and then the mask may be removed to
leave the construction shown in FIG. 2. The patterned mask may
comprise any suitable composition or combination of compositions,
and may, for example, comprise photoresist and/or materials
fabricated utilizing pitch-multiplication methodologies.
[0023] Referring to FIG. 3, platinum-containing material 30 is
formed over an upper surface of stack 24, and within the openings
26-29 that extend through the stack. The platinum-containing
material may comprise, consist essentially of, or consist of
platinum; and may be formed with any suitable processing,
including, for example, one or more of ALD, CVD and PVD.
[0024] Referring to FIG. 4, construction 10 is subjected to CMP to
remove platinum-containing material 30 from over the upper surface
of stack 24; and to form platinum-containing structures 32-35 from
the platinum-containing material within openings 26-29. In the
shown embodiment, the polishing stops on the metal oxide 22.
[0025] The polishing forms the shown planarized surface 37
extending across metal oxide 22 and platinum-containing structures
32-35. In some embodiments, the structures 32-35 may ultimately
correspond to bottom electrodes of memory cells, and in such
embodiments the polishing may be considered to electrically isolate
such electrodes from one another.
[0026] The polishing may utilize any suitable polishing slurry. For
instance, the polishing may utilize a noble metal polishing slurry,
such as, for example, a slurry referred to as FCN120.TM., and
available from Fujimi Corporation of Tualatin, Oreg.
[0027] The polishing may be conducted at any suitable temperature,
and in some embodiments may be conducted at about room temperature
(about 22.degree. C.).
[0028] The platinum-containing structures 32-35 have lateral
surfaces 32a, 33a, 34a and 35a, respectively, along lateral
peripheries of the structures; and such lateral surfaces are
directly against metal oxide 22 and first material 20 in the shown
embodiment.
[0029] The utilization of metal oxide 22 is found to improve the
CMP of platinum relative to processes which omit such metal oxide.
The improvement in the CMP may include one or both of reduced
surface roughness across the resulting platinum-containing
structures 32-35 relative to prior art processes, and less pull-out
of platinum from within openings 26-29 relative to prior art
processes.
[0030] A possible mechanism by which the metal oxide leads to
improved surface roughness across the platinum-containing
structures is that the metal oxide has appropriate adhesion
relative to platinum to enable micro-peeling of platinum from the
metal oxide during CMP. The micro-peeling leads to substantially
continuous, uniform removal of platinum from over the metal oxide;
in contrast to prior art processes lacking such metal oxide, in
which platinum sometimes peels in large sheets.
[0031] A possible mechanism by which the metal oxide leads to less
pull-out of platinum from within openings 26-29 is that the metal
oxide has appropriate adhesion relative to platinum so that the
metal oxide on lateral surfaces 32a, 33a, 34a and 35a assists in
retaining the platinum-containing structures 32-35 within the
openings. Additionally, or alternatively, the metal oxide may
alleviate the prior art problem of having platinum peel in large
sheets during CMP. It is possible that some of the prior art
problem with platinum structures pulling out from openings is due
to the platinum peeling in large sheets during CMP, with platinum
being pulled out of the openings and transferring with the large
platinum sheets that are removed during prior art platinum CMP
processes.
[0032] The above-discussed mechanisms are provided to assist the
reader in understanding some aspects of the invention, and are not
to limit the claims that follow except to the extent, if any, that
such mechanisms are explicitly recited in the claims.
[0033] In some embodiments, it is found that utilizing a metal
oxide 22 consisting of aluminum oxide may be particularly
advantageous for achieving platinum CMP in which the resulting
platinum-containing structures have low surface roughness, and in
which few, if any, platinum-containing structures are undesirably
pulled out from within the openings utilized to pattern such
structures.
[0034] The planarized surface 37 may have a root mean square
roughness across the platinum of less than or equal to about 50
.ANG.. Such low amount of surface roughness may be advantageous
relative to prior art platinum surfaces having a higher amount of
surface roughness. For instance, the platinum surface having the
low amount of surface roughness may provide a better pad for
deposition of subsequent materials than would a platinum surface
having a higher amount of surface roughness. In some embodiments,
the platinum-containing structures 32-35 are electrodes, and
programmable material (not shown) is subsequently formed along the
upper surfaces of the platinum-containing structures. In such
embodiments, it may be advantageous to form the programmable
material along a platinum-containing surface having a low amount of
surface roughness relative to a platinum-containing surface having
a higher amount of surface roughness.
[0035] The platinum-containing structures 32-35 are contained
within the openings 26-29, and thus have shapes defined by the
shapes of the openings. The openings 26-29 may have any suitable
shapes to define desired platinum-containing structures. In some
example embodiments, the openings may be trenches utilized to
define platinum-containing lines that extend horizontally into and
out of the page relative to the cross-section of FIG. 4, in other
example embodiments the openings may be shaped to define
vertically-extending platinum-containing interconnects relative to
the cross-section of FIG. 4, etc. The openings 26-29 may have
substantially the same shapes as one another in some embodiments;
and in other embodiments at least one of the openings may have a
substantially different shape than at least one other of the
openings.
[0036] In the shown embodiment, the openings extend to electrically
conductive structures 14-17. In other example embodiments the
openings may not extend to such electrically conductive structures.
For instance, in some embodiments the openings may be long trenches
utilized to define platinum-containing lines. Such trenches may be
entirely contained within the first material 20, rather than
extending through such first material to electrically conductive
structures (although there may be regions along the trenches where
the trenches contact electrically conductive structures to form
interconnects between the platinum-containing lines and other
circuitry).
[0037] FIG. 5 shows a construction 10a illustrating an embodiment
alternative to that of FIG. 4. Specifically, the CMP has been
conducted for a sufficient duration to entirely remove metal oxide
22 (FIG. 4), and to thus form the planarized surface 37 extending
across platinum-containing structures 32-35 and first material 20.
Accordingly, the lateral surfaces 32a, 33a, 34a and 35a of
platinum-containing structures 32-35 are only against first
material 20 in the embodiment of FIG. 5; rather than being against
the first material 20 and the metal oxide 22 as occurred in the
embodiment of FIG. 4.
[0038] Another example embodiment is described with reference to
FIGS. 6-11.
[0039] Referring to FIG. 6, a construction 10b comprises the first
material 20 over the electrically conductive structures 14-17.
[0040] Referring to FIG. 7, openings 26-29 are etched through first
material 20 to the underlying electrically conductive structures
14-17.
[0041] Referring to FIG. 8, metal oxide 22 is formed across
material 20 and within openings 26-29. The metal oxide lines
sidewalls and bottoms of the openings 26-29, and narrows such
openings.
[0042] Referring to FIG. 9, the metal oxide 22 is subjected to
anisotropic etching which removes the metal oxide from over
substantially horizontal surfaces (specifically, from along the
bottoms of openings 26-29, and from over the top of first material
20), while leaving the metal oxide along the substantially vertical
surfaces (specifically, along the sidewalls of the openings). The
segments of metal oxide 22 remaining at the processing stage of
FIG. 9 form a plurality of liners 50 along sidewall peripheries of
the openings 26-29.
[0043] Referring to FIG. 10, platinum-containing material 30 is
formed within openings 26-29, and directly against the liners 50 of
metal oxide 22.
[0044] Referring to FIG. 11, construction 10b is subjected to CMP
to form platinum-containing structures 32-35. The polishing forms
the planarized surface 37 extending across first material 20,
liners 50, and platinum-containing structures 32-35. In the
embodiment of FIG. 11, the liners 50 are directly between the first
material 20 and sidewall surfaces of the platinum-containing
structures; and are directly against the first material 20 and the
sidewall surfaces of the platinum-containing structures.
[0045] Another example embodiment is described with reference to
FIGS. 12-14.
[0046] Referring to FIG. 12, a construction 10c is shown at a
processing stage subsequent to that of FIG. 7. The construction 10c
comprises metal oxide 22 formed over first material 20 and within
the openings 26-29. The metal oxide lines sidewalls of the openings
26-29, and narrows such openings. Unlike the above-discussed
embodiment of FIG. 8, the metal oxide lines sidewall peripheries of
openings 26-29 but is not along the bottom peripheries of such
openings. Metal oxide 22 may be formed to line the sidewall
peripheries of the openings and not cover the bottom peripheries of
the openings utilizing appropriate deposition conditions and/or
high aspect ratio openings; as will be recognized by persons of
ordinary skill in the art. Alternatively, the construction of FIG.
12 may be formed by forming the metal oxide to initially line the
bottom peripheries of the openings in addition to lining the
sidewall peripheries of the openings, and the metal oxide may then
be selectively removed from the bottom peripheries of the openings
utilizing appropriate etching and patterning; as will be recognized
by persons of ordinary skill in the art.
[0047] The metal oxide 22 may be considered to form an expanse 52
across an upper surface of first material 20; and specifically
across regions of the first material between the openings
26-29.
[0048] Referring to FIG. 13, platinum-containing material 30 is
formed across dielectric material 22 and within openings 26-29.
[0049] Referring to FIG. 14, construction 10c is subjected to CMP
to form platinum-containing structures 32-35. The polishing forms
the planarized surface 37 extending across metal oxide expanse 52,
and across the platinum-containing structures 32-35.
[0050] FIG. 15 shows a construction 10d illustrating an embodiment
alternative to that of FIG. 14. Specifically, the CMP has been
conducted for a sufficient duration to entirely remove metal oxide
22 from over first material 20, and to thus form liners 50 from the
metal oxide 22. The planarized surface 37 formed by the CMP extends
across platinum-containing structures 32-35, liners 50 and first
material 20.
[0051] The particular orientation of the various embodiments in the
drawings is for illustrative purposes only, and the embodiments may
be rotated relative to the shown orientations in some applications.
The description provided herein, and the claims that follow,
pertain to any structures that have the described relationships
between various features, regardless of whether the structures are
in the particular orientation of the drawings, or are rotated
relative to such orientation.
[0052] The cross-sectional views of the accompanying illustrations
only show features within the planes of the cross-sections, and do
not show materials behind the planes of the cross-sections in order
to simplify the drawings.
[0053] When a structure is referred to above as being "on" or
"against" another structure, it can be directly on the other
structure or intervening structures may also be present. In
contrast, when a structure is referred to as being "directly on" or
"directly against" another structure, there are no intervening
structures present. When a structure is referred to as being
"connected" or "coupled" to another structure, it can be directly
connected or coupled to the other structure, or intervening
structures may be present. In contrast, when a structure is
referred to as being "directly connected" or "directly coupled" to
another structure, there are no intervening structures present.
[0054] In some embodiments, a construction comprises a dielectric
stack having metal oxide over a first material. Platinum-containing
structures extending into the dielectric stack, with the
platinum-containing structures having sidewall surfaces along the
metal oxide and along the first material. A planarized surface
extends across the platinum-containing structures and the metal
oxide.
[0055] In some embodiments, a construction comprises a first
material, platinum-containing structures extending into the first
material, and metal oxide liners along sidewall surfaces of the
platinum-containing structures and directly between said sidewall
surfaces and the first material. A planarized surface extends
across the platinum-containing structures, the first material and
the metal oxide liners.
[0056] In some embodiments, a method of forming a plurality of
platinum-containing structures comprises forming a first material
across a plurality of electrically conductive structures, and
forming metal oxide across the first material. Openings are formed
to extend through the metal oxide and the first material to the
electrically conductive structures. Platinum-containing material is
formed within the openings and over the metal oxide.
Chemical-mechanical polishing is utilized to form a planarized
surface extending across the platinum-containing material and the
metal oxide.
[0057] In some embodiments, a method of forming a plurality of
platinum-containing structures comprises forming a first material
across a plurality of electrically conductive structures, and
forming metal oxide across the first material. Openings are formed
to extend through the metal oxide and the first material to the
electrically conductive structures. Platinum-containing material is
formed within the openings and over the metal oxide.
Chemical-mechanical polishing is utilized to remove the metal oxide
and form a planarized surface extending across the
platinum-containing material and the first material.
[0058] In some embodiments, a method of forming a plurality of
platinum-containing structures comprises forming a first material
across a plurality of electrically conductive structures. Openings
are formed to extend through the first material to the electrically
conductive structures. Metal oxide is formed across the first
material and within the openings. The metal oxide within the
openings lines sidewalls and bottoms of the openings. The metal
oxide is etched to remove the metal oxide from over the first
material and from across the bottoms of the openings while leaving
liners of the metal oxide along the sidewalls of the openings.
Platinum-containing material is formed within the openings and
directly against the metal oxide liners. Chemical-mechanical
polishing is utilized to form a planarized surface extending across
the platinum-containing material, the first material and the metal
oxide liners.
[0059] In some embodiments, a method of forming a plurality of
platinum-containing structures comprises forming a first material
across a plurality of electrically conductive structures. Openings
are formed to extend through the first material to the electrically
conductive structures. Metal oxide is formed across the first
material and within the openings The metal oxide lines sidewalls of
the openings to narrow the openings, and the metal oxide forms an
expanse across regions of the first material between the openings.
Platinum-containing material is formed within the narrowed openings
and over the metal oxide. Chemical-mechanical polishing is utilized
to form a planarized surface extending across the
platinum-containing material and across the metal oxide
expanse.
[0060] In some embodiments, a method of forming a plurality of
platinum-containing structures comprises forming a first material
across a plurality of electrically conductive structures. Openings
are formed to extend through the first material to the electrically
conductive structures. Metal oxide is formed across the first
material and within the openings. The metal oxide lines sidewalls
of the openings to narrow the openings, and the metal oxide forms
an expanse across regions of the first material between the
openings. Platinum-containing material is formed within the
openings and directly over the metal oxide expanse.
Chemical-mechanical polishing is utilized to remove the metal oxide
expanse and form a planarized surface extending across the
platinum-containing material, the first material and segments of
the metal oxide lining sidewalls of the openings.
[0061] In compliance with the statute, the subject matter disclosed
herein has been described in language more or less specific as to
structural and methodical features. It is to be understood,
however, that the claims are not limited to the specific features
shown and described, since the means herein disclosed comprise
example embodiments. The claims are thus to be afforded full scope
as literally worded, and to be appropriately interpreted in
accordance with the doctrine of equivalents.
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