U.S. patent application number 13/220903 was filed with the patent office on 2013-02-28 for wafer holder and temperature conditioning arrangement and method of manufacturing a wafer.
This patent application is currently assigned to OC Oerlikon Balzers AG. The applicant listed for this patent is Juergen Kielwein, Rogier Lodder, Bart Scholte Von Mast. Invention is credited to Juergen Kielwein, Rogier Lodder, Bart Scholte Von Mast.
Application Number | 20130052834 13/220903 |
Document ID | / |
Family ID | 46851950 |
Filed Date | 2013-02-28 |
United States Patent
Application |
20130052834 |
Kind Code |
A1 |
Kielwein; Juergen ; et
al. |
February 28, 2013 |
WAFER HOLDER AND TEMPERATURE CONDITIONING ARRANGEMENT AND METHOD OF
MANUFACTURING A WAFER
Abstract
A wafer holder and temperature controlling arrangement has a
metal circular wafer carrier plate, which covers a heater
compartment. In the heater compartment a multitude of heater lamp
tubes is arranged, which directly acts upon the circular wafer
carrier plate. Latter is drivingly rotatable about the central
axis. A wafer is held on the circular wafer carrier plate by means
of a weight-ring residing upon the periphery of a wafer deposited
on the wafer carrier plate.
Inventors: |
Kielwein; Juergen;
(Rankweil, AT) ; Scholte Von Mast; Bart; (Azmoos,
CH) ; Lodder; Rogier; (Bad Ragaz, CH) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kielwein; Juergen
Scholte Von Mast; Bart
Lodder; Rogier |
Rankweil
Azmoos
Bad Ragaz |
|
AT
CH
CH |
|
|
Assignee: |
OC Oerlikon Balzers AG
Balzers
LI
|
Family ID: |
46851950 |
Appl. No.: |
13/220903 |
Filed: |
August 30, 2011 |
Current U.S.
Class: |
438/758 ;
257/E21.24; 392/411 |
Current CPC
Class: |
H01L 21/67115
20130101 |
Class at
Publication: |
438/758 ;
392/411; 257/E21.24 |
International
Class: |
H01L 21/31 20060101
H01L021/31; F27D 11/12 20060101 F27D011/12 |
Claims
1. A wafer holder and temperature conditioning arrangement to be
mounted to a vacuum wafer treatment chamber, comprising: a base
arrangement with an extended, essentially plane surface bordered by
a protruding circular rim surface about a center of said
essentially plane surface; a metal circular wafer carrier plate
mounted centered with respect to said center of said essentially
plane surface, one surface of said metal circular wafer carrier
plate, said extended, essentially plane surface, and said
protruding circular rim surface commonly defining a heater
compartment, said metal circular wafer carrier plate being
drivingly rotatable about a geometric axis through said center of
said extended, essentially plane surface with respect to said base
arrangement; a multitude of heater lamp tubes arranged in said
heater compartment along said extended, essentially plane surface
and along said one surface of said metal circular wafer carrier
plate and directly exposed to said one surface of said metal
circular wafer carrier plate and mounted to said base arrangement;
and a wafer retaining arrangement operationally coupled to said
metal circular wafer carrier plate.
2. The wafer holder and temperature conditioning arrangement of
claim 1 comprising an electric power control unit controlling power
to said multitude of heater lamp tubes and conceived to operate
said multitude of heater lamp tubes to establish along the other
surface of said metal circular wafer carrier plate, opposite said
one surface thereof, a maximum temperature of at least 800.degree.
C., averaged over said other surface.
3. The wafer holder and temperature conditioning arrangement of
claim 1, said multitude of heater lamp tubes consisting of a
multitude of equal heater lamp tubes, mounted in said heater
compartment equally oriented with respect to radial direction from
said center to said circular rim surface.
4. The wafer holder and temperature conditioning arrangement of
claim 3, the length extent direction of said heater lamp tubes
being angularly offset from said radial direction.
5. The wafer holder and temperature conditioning arrangement of
claim 1, a position of at least a part of said heater lamp tubes in
said heater compartment being adjustable.
6. The wafer holder and temperature conditioning arrangement of
claim 1, comprising a gas outlet- and dispensing-arrangement trough
and along said other surface of said metal circular wafer carrier
plate.
7. The wafer holder and temperature conditioning arrangement of
claim 1, comprising a piping arrangement in a base arrangement
conceived to flow a liquid herein.
8. The wafer holder and temperature conditioning arrangement of
claim 1, said wafer retaining arrangement is a weight-ring
dimensioned so as to reside on a periphery of a wafer to be
processed.
9. The wafer holder and temperature conditioning arrangement of
claim 1, said heater lamp tubes having a thickness to the extent of
filling said heater compartment between said extended essentially
plane surface and said one surface of said metal circular wafer
carrier plate without contacting the just addressed surfaces.
10. The wafer holder and temperature conditioning arrangement of
claim 1, said extended essentially plane surface and said
protruding peripheral circular rim surface being heat reflector
surfaces.
11. The wafer holder and temperature conditioning arrangement of
claim 1, said metal circular wafer carrier plate being electrically
isolated from said base arrangement.
12. The wafer holder and temperature conditioning arrangement of
claim 1, said wafer carrier plate being conceived for one of: a 100
mm diameter wafer, said multitude consisting of four 500 W halogen
heater lamp tubes; a 150 mm diameter wafer, said multitude
consisting of five 500 W halogen heater lamp tubes; or a 200 mm
diameter wafer, said multitude consisting of ten 250 W halogen
heater lamp tubes.
13. A method of manufacturing a wafer coated with a layer
comprising, providing in a vacuum process coating chamber, a wafer
holder and temperature conditioning arrangement comprising: a base
arrangement with an extended essentially plane surface bordered by
a protruding circular rim surface about a center of said
essentially plane surface; a metal circular wafer carrier plate
centrally mounted with respect to said center of said essentially
plane surface, one surface of said metal circular wafer carrier
plate, said extended essentially plane surface, and said protruding
circular rim surface commonly defining a heater compartment, said
wafer carrier plate being drivingly rotatable about a geometric
axis through said center of said extended essentially plane surface
with respect to said base arrangement; a multitude of heater lamp
tubes arranged in said heater compartment along said extended
essentially plane surface and said one surface of said metal
circular wafer carrier plate and directly exposed to said one
surface of said metal circular wafer carrier plate and mounted to
said base arrangement; a wafer retaining arrangement operationally
coupled to said metal circular wafer carrier plate; and an electric
power control unit controlling power to said multitude of heater
lamp tubes and conceived to operate said multitude of heater lamp
tubes so as to establish along the other surface of said metal
circular wafer carrier plate, opposite said one surface thereof, a
predetermined temperature, averaged over said other surface;
depositing on said other surface of said metal circular wafer
carrier plate a wafer to be coated, drivingly rotating said metal
circular wafer carrier plate while operating said electric power
control unit to heat up said wafer to at least 800.degree. C., and
depositing a layer on said wafer.
14. The method of claim 13 comprising said layer being of lead
zirconatetitanate (PZT).
15. The wafer holder and temperature conditioning arrangement of
claim 8, wherein said weight-ring is conceived to be electrically
connected to an electric bias source.
16. The wafer holder and temperature conditioning arrangement of
claim 10, said extended essentially plane surface and said
protruding peripheral circular rim surface being high gloss
polished.
17. The wafer holder and temperature conditioning arrangement of
claim 11, said metal circular wafer carrier plate being conceived
to be electrically connected to an electric biasing source.
18. The method of claim 14, said lead zirconatetitanate (PZT) is
deposited by cosputtering lead, zirconium, and titanium.
Description
[0001] The present invention is directed on a wafer holder and
temperature conditioning arrangement, also called throughout the
present description "chuck arrangement", as well as on a method of
manufacturing a coated wafer making use of such chuck
arrangement.
[0002] Chuck arrangements, by which silicon wafers are positioned
and held during processing in a vacuum processing chamber and are
temperature conditioned during such processing, are widely known.
Thereby, vacuum processing may include physical vapour deposition
processes and/or chemical vapour deposition processes so as to
perform layer deposition upon the wafer, may be etching upon the
wafer or of the wafer, may be heating or cooling down the
wafer.
[0003] Thereby, the wafer is commonly held upon the chuck
arrangement by electrostatic forces or by means of a retaining
weight-ring resting upon the periphery of the wafer being processed
and biasing the wafer towards a wafer carrier surface of the chuck
arrangement by weight.
[0004] Depending upon the vacuum pressure establishing in the
vacuum processing chamber heat transfer from the chuck arrangement
to the wafer or inversely is predominantly governed by radiation.
It is commonly known to establish between the carrier surface of
the chuck arrangement and the surface of the wafer residing on the
addressed surface a gas cushion at an increased pressure with
respect to vacuum pressure of the wafer surrounding processing
atmosphere so as to add to the addressed heat transfer by
radiation, heat transfer by heat conductions.
[0005] In context with manufacturing and selling the CLN 300 vacuum
processing planed by OC Oerlikon Balzers a rotating chuck
arrangement has become known with a structure which shall be
explained with the help of FIG. 1. This figure shows schematically
and highly simplified the structure of such prior art rotating
chuck arrangement. The main function of the addressed rotating
chuck arrangement is to allow the use of a sputtering source with
multiple targets. The rotation of the chuck arrangement and thus of
the wafer positioned and held upon such arrangement ensures that
the layer, that is created, is uniform.
[0006] The wafer holder and temperature conditioning arrangement 1
also called chuck arrangement 1, comprises a base arrangement 3 to
be mounted to the wall 5 of a vacuum processing chamber with
processing space P. The base arrangement 3 has, pointing towards
the processing space P, with a pattern of protruding ribs 7
concentric about a central axis A of the overall chuck arrangement
1. Within the base arrangements 3, there is provided, again
concentrically to axis A, a heater compartment 9 as a ring shaped
chamber wherein four heater lamp tubes 11 are mounted and operated.
The heater lamp tubes 11 are each distinctly located in the heater
compartment 9 with different spacing's from axis A and with
different angular orientations with respect to radial direction r
from axis A to the circular periphery-wall of the heater
compartment 9.
[0007] In operation, the heater compartment 9 and thus the heater
lamp tubes 11 are in vacuum within the processing chamber. The
concentric pattern of protruding ribs 7 match with a pattern of
respective circular grooves 13 worked one surface of a metal,
circular wafer carrier plate 15. By the addressed patterns of ribs
7 and grooves 13, the effective surface for heat transfer between
the base arrangement 3 and the metal, circular wafer carrier plate
15 is doubled. Additionally the base arrangement 3 as well as the
metal, circular wafer carrier plate 15 is coated with a special
black coating that absorbs heat radiation i.e. infrared
radiation.
[0008] The metal, circular wafer carrier plate 15 is driven by
means of a driver shaft 17 operationally connected to a servo motor
19. The driver shaft 17, coaxial to axis A, and the metal, circular
wafer carrier plate 15 are electrically isolated from base
arrangement 3 and from the wall 5 of the vacuum processing chamber
and may thus (not shown) be operated at any desired electrical bias
signal.
[0009] The driver shaft 17 further comprises a coaxial gas feed
line 21, which, on one hand, is operationally connected to a gas
source arrangement 23 and which abuts, on the other hand, in a gas
outlet and gas diverting system 26 with gas distribution grooves 28
provided in the substantially plane surface 25 of the metal,
circular wafer carrier plate 15 whereupon a wafer 27 to be
processed is located in operation. The wafer 27 is retained upon
the metal, circular wafer carrier plate 15 by means of a weight
ring 29 which, by its proper weight, biases the wafer 27 towards
and upon the addressed surface 25 of the metal, circular wafer
carrier plate 15. By means of the gas feed system 21, 23, the gas
outlet 26 and gas distribution grooves 28 in the addressed surface
25, there is established, in operation, a cushion of back gas at a
pressure larger than the operating vacuum pressure in processing
space P, which back gas cushion improves heat transfer from the
metal, circular wafer carrier plate 15 towards or from wafer 27 by
heat conductions.
[0010] The base arrangement 3 further comprises a piping of a
cooling system 31 conceived to flow a liquid cooling medium in the
base arrangement 3. Heat transfer from or to the wafer 27 from the
heater compartment 9 or from the cooling system 31 with piping is
performed over a solid material surface interface between base
arrangement 3 to the metal circular wafer carrier plate 15 and from
that plate 15 over of the back gas cushion to or from wafer 27.
Thereby, thermical inertia especially of the base arrangement 3 do
substantially contribute to the reaction time by which the
temperature of wafer 27 reacts upon a heating or cooling step
applied to the base arrangement 3. Depending upon the diameter of
the wafer 27 two or four of the heater lamp tube 11 are enabled.
The individual location of the heater lamp tube 11 within the
heater compartment 9 is optimized to result, once thermal stability
of the wafer 27 is reached in a homogenous temperature distribution
along the wafer 27, which is rotated as shown in FIG. 1 by w,
together with the metal, circular wafer carrier plate 15 and the
weight-ring 29.
[0011] With the known arrangement as shown in FIG. 1, 300 mm or 200
mm silicon wafers may be processed. The maximum temperature that
can be reached for the wafers is approximately 200.degree. C. and
thus the surface of metal, circular wafer carrier plate 15 may
reach as well temperatures of approximately 200.degree. C.
[0012] It is one object of the present invention to provide a wafer
holder and temperature conditioning arrangement to be mounted to a
vacuum wafer treatment chamber, which allows a large number of
different wafer processings, thereby additionally simplifying the
overall structure of the wafer holder and temperature conditioning
arrangement as known and as was exemplified with the help of FIG.
1.
[0013] This is reached by the wafer holder and temperature
conditioning arrangement to be mounted to a vacuum wafer treatment
chamber, which comprises: [0014] a base arrangement with an
extended, essentially plane surface, bordered by a protruding
circular rim surface about the centre of the essentially plane
surface; [0015] a metal circular wafer carrier plate mounted
centred with respect to the centre of the essentially plane
surface, one surface of the metal circular wafer carrier plate, the
extended, essentially plane surface and the protruding circular rim
surface, commonly defining a heater compartment, the metal wafer
carrier plate being drivingly rotatable about a geometric axis
through the centre of the essentially plane surface with respect to
the base arrangement; [0016] a multitude of heater lamp tubes
arranged in the heater compartment along the extended essentially
plane surface and along the one surface of the metal circular wafer
carrier plate and directly exposed to this surface and mounted to
the base arrangement; [0017] a wafer retaining arrangement
operationally coupled to the metal circular wafer carrier
plate.
[0018] Because of the fact that the metal circular wafer carrier
plate itself forms one wall of the heater compartment, wherein the
heater lamp tubes are provided, the metal circular wafer carrier
plate is directly heated by the heater lamp tubes by radiation and
very small thermal inertia exist between a wafer applied to the
addressed wafer carrier plate and the heater lamp tubes. This
significantly contributes to the fact a very high maximum
temperature as of at least 800.degree. C. may be realised along the
metal circular wafer carrier plate and thus along a wafer residing
on the addressed carrier plate. In one embodiment of the wafer
holder and temperature conditioning arrangement according to the
present invention this arrangement comprises an electric power
control unit, controlling power to the multitude of heater lamp
tubes. This power control unit is conceived to operate the
multitude of heater lamp tubes so as to establish along the other
surface of the metal circular wafer carrier plate, opposite said
one surface thereof, and thus whereupon in operation, the wafer
resides, a maximum temperature of at least 800.degree. C. averaged
over the addressed other surface.
[0019] Thereby, wafer processing and especially coating of wafer
becomes possible in the vacuum wafer treatment chamber which where
up to now not possible with known wafer holder and temperature
conditioning arrangements. Additionally, the small thermical
inertia between heater lamp tubes and wafer allow for a highly
direct and low time lag temperature adjustment at the wafer.
[0020] The wafer carrier plate is in a today's preferred embodiment
drivingly rotatable about the geometric axis in that, as was shown
in context with FIG. 1, a driver shaft is led through the base
arrangement and coupled to the metal circular wafer carrier plate,
which latter in today's preferred embodiment, is electrically
isolated from the base arrangement to be operable at a desired
electric bias potential.
[0021] The wafer retaining arrangement of today's preferred
embodiment is realised as was shown in FIG. 1 also by means of a
weight ring but could also be realised in a different manner as
e.g. by permanent magnet and/or electro magnetic retaining
members.
[0022] The fact that the heater compartment operated in vacuum
atmosphere is directly exposed to the metal circular wafer carrier
plate additionally reduces the constructional efforts.
[0023] In one embodiment of the invention, which may be combined
with any of the previously and subsequently addressed embodiments
unless in contradiction, the multitude of heater lamp tubes consist
of a multitude of equal heater lamp tubes, which are mounted in the
heater compartment equally oriented with respect to radial
direction from the centre to the circular rim surface. Thereby, in
a further embodiment, the length extent direction of the heater
lamp tube is angularly offset with respect to the radial direction
from the centre of the essentially plane surface towards the
protruding circular rim surface.
[0024] In a further embodiment, which may be combined with any of
the previously and subsequently addressed embodiments unless in
contradiction, the position of at least a part of the heater lamp
tubes in the heater compartment may be adjusted so as to optimize
temperature distribution along a wafer disposed on the metal
circular wafer carrier plate and rotated therewith and thus with
respect to the heater lamp tubes.
[0025] Similarly to the explanation with respect to FIG. 1, also in
one embodiment of the present invention, which may be combined with
any of the previously and subsequently addressed embodiments, if
not in contradiction, there is provided a gas outlet and dispensing
arrangement through and along the other surface of the metal
circular wafer carrier plate, which is that surface which is
directly exposed to the wafer.
[0026] Also similarly to the explanations given in context with
FIG. 1, one embodiment which may be combined with any of the
already and the subsequently addressed embodiments, unless in
contradiction, there is provided a piping arrangement in the base
arrangement conceived to flow a liquid therein, a cooling liquid to
cool down a processed wafer whenever necessary. Please note that
due to small thermal inertia, the effect of such cooling upon the
wafer according to the present invention is significantly faster
than with the known arrangement as of FIG. 1.
[0027] Further, in one embodiment of the present invention, which
may be combined with any of the already and the subsequently
addressed embodiments, unless in contradiction, the wafer retaining
arrangement is a weight-ring dimensioned so as to reside on the
periphery of a wafer to be processed, whereby the weight-ring is
preferably conceived to be electrically connected to an electric
bias source.
[0028] In one further embodiment, which may be combined with any of
the already and subsequently addressed embodiments, unless in
contradiction, the heater lamp tubes have a thickness extent which
fills the heater compartment between the extended essentially plane
surface and the one surface of the metal circular wafer carrier
plate without contacting these surfaces. In other words, the heater
compartment thickness is practically filled by the thickness extent
of the heater lamp tubes.
[0029] In one embodiment, which may be combined with any of the
embodiments already and subsequently addressed, unless in
contradiction, the extended essentially plane surface and the
protruding peripherals circular rim surface are heat reflector
surfaces, which are preferably high gloss polished. Thereby, the
heat generated by the heater lamp tubes, heat up the base
arrangement to only a restricted extent as being reflected by the
addressed surface directly towards the metal circular wafer carrier
plate. This embodiment is today highly preferred.
[0030] In a further embodiment of the present invention, which may
be combined with any of the already and subsequently addressed
embodiments, unless in contradiction, the metal circular wafer
carrier plate is electrically isolated from the base arrangement
and is preferably conceived to be electrically connected to an
electric biasing source.
[0031] More specifically, the wafer holder and temperature
conditioning arrangement of the present invention and in specific
embodiments, which may be combined with any of the embodiments
addressed above unless in contradiction, the wafer carrier plate is
conceived for one of [0032] a 100 mm diameter wafer, whereby the
multitude of heater lamp tubes consists of four 500 W halogen
heater lamp tubes; [0033] a 150 mm diameter wafer, whereby the
addressed multitude consists of five 500 W halogen heater lamp
tubes; [0034] a 200 mm diameter wafer, whereby the multitude as
addressed, consists of ten 250 W halogen heater lamp tubes.
[0035] The invention is further directed on a method of
manufacturing a wafer coated with a layer, comprising [0036]
providing in a vacuum process coating chamber a wafer holder and
temperature conditioning arrangement, comprising: [0037] a base
arrangement with an extended essentially plane surface, bordered by
a protruding circular rim surface about the centre of the
essentially plane surface; [0038] a metal circular wafer carrier
plate centrally mounted with respect to the centre of the
essentially plane surface, one surface of the metal circular wafer
carrier plate, the extended, essentially plane surface and the
protruding circular rim surface commonly defining a heater
compartment, the metal circular wafer carrier plate being drivingly
rotatable about a geometric axis through the centre of the
essentially plane surface with respect to the base arrangement;
[0039] a multitude of heater lamp tubes arranged in the heater
compartment along the extended essentially plane surface and the
one surface of the metal circular wafer carrier plate and directly
exposed to the one surface of the metal circular wafer carrier
plate and mounted to the base arrangement; [0040] a wafer retaining
arrangement operationally coupled to the metal circular wafer
carrier plate; [0041] an electric power control unit, controlling
power to the multitude of heater lamp tubes and conceived to
operate the multitude of heater lamp tubes so as to establish along
the other surface of the metal circular wafer carrier plate,
opposite the one surface thereof, a predetermined temperature,
averaged over the other surface and, [0042] depositing on the other
surface of the metal circular wafer carrier plate, a wafer to be
coated; [0043] drivingly rotating the metal circular wafer carrier
plate, while operating the electric power control unit to heat up
the wafer to at least 800.degree. C. and; [0044] depositing a layer
on the wafer.
[0045] Thereby, in the frame of the addressed method, a wafer
holder and temperature conditioning arrangement in any of the
embodiments as addressed in context with such wafer holder and
temperature conditioning arrangement according to the invention
above may be applied. Further, if we talk about coating a "wafer",
we understand applying a coating upon such wafer, which includes
that between the silicon wafer and the coating to be applied one or
more than one layer have already been applied.
[0046] In a preferred embodiment of the addressed method the layer
as applied is of lead-zirconatetitanate, which is applied
preferably by cosputtering lead, zirconium and titanium.
[0047] The invention shall now further be exemplified with the help
of a further figure. Thereby, this further figure shows:
[0048] FIG. 2: In a representation in analogy to that of FIG. 1, a
wafer holder and temperature conditioning arrangement according to
the present invention, by which the method according to the present
invention is realised.
[0049] FIG. 3: A simplified and schematic top view on the heater
compartment of a wafer holder and temperature conditioning
arrangement according to the present invention and as exemplified
in FIG. 2 for processing 100 mm diameter wafers.
[0050] FIG. 4: In a representation in analogy to that of FIG. 3,
the arrangement conceived to process 150 mm diameter wafers.
[0051] According to FIG. 2, a base arrangement 103 is mounted to
the wall 5 of a vacuum processing chamber with the processing span
P. The base arrangement 103 of the wafer holder and temperature
conditioning arrangement (chuck arrangement) 101 according to the
present invention has a substantially planar surface 107, which is
bordered by a circular protruding rim surface 108. The rim surface
108 is circular about a central axis A of the substantially planar
surface 107 of base arrangement 103. The bin 109 thereby formed in
the base arrangement 103 is closed by a circular metal wafer
carrier plate 115, which is configured as already explained in
context with FIG. 1, with a gas outlet--and distribution--system
128, fed with a back gas through a gas feed line 121 centrally
within driver shaft 117 for rotationally driving the metal circular
wafer carrier plate 115. Through feed line 121 and the outlet and
distribution system 128, a back gas cushion may be applied between
top surface of the metal circular wafer carrier plate 115 and a
wafer 127 to be processed, as schematically shown from a gas
reservoir 123. The driver shaft 117 is driven as schematically
shown by motor 119. As already shown in FIG. 1 schematically,
vacuum seal 30, 130 respectively, are provided.
[0052] The bottom surface 116 of the metal circular wafer carrier
plate 115 closes the bin 109, formed in the base arrangement 103 by
the rim surface 108 and the substantially planar surface 107,
thereby defining for a heat compartment 110: The heat compartment
110 is limited on one side by the drivingly rotatable metal
circular wafer carrier plate 115. In the heater compartment 110, a
multitude of heater lamp tubes 111 are mounted, the metal circular
wafer carrier plate being directly exposed to the heater lamp tubes
111. The mount and electrical connections to the heater lamp tubes
111 are only schematically shown in FIG. 2 at 111.sub.o and
111.sub.i. The surfaces of the bin 109, namely protruding circular
rim surface 108 as well as substantially planar surface 107 are
realised as heat reflecting surfaces, are preferably high gloss
polished.
[0053] As it is exemplified in the FIGS. 3 and 4, the heater lamp
tubes 111 are all equally oriented with respect to radial direction
R from the centre A of the planar surface 107 to the circular rim
surface 108. In an arrangement according to the present invention
conceived for processing wafers 127 with a diameter of 100 mm, four
equal heater lamp tubes 111 with a nominal electric power of 500 W,
halogen tubes, are provided in the heater compartment 110. The
length axes<of the heater lamp tubes 111 are equally angularly
offset by an angle .alpha. from the radial direction R. In FIG. 4
and in a representation in analogy to that of FIG. 3, the
arrangement according to the invention is conceived for a 150 mm
diameter wafer. Five 500 W halogen heater lamp tubes 111 are
provided in the heater compartment 110, the length axes<of which
being again equally angularly offset with respect to any radial
direction R.
[0054] In analogy (non represented) an arrangement according to the
invention conceived for 200 mm diameter wafers comprises ten heater
lamp tubes of 250 W nominal electric power.
[0055] As further purely schematically shown in FIG. 2, there is
provided a power controller unit 134, by which the electric power
delivered to the heater lamp tubes 111 is controlled to provide at
the surface of the metal circular wafer carrier plate 115 exposed
to wafer 127 a maximum temperature of at least 800.degree. C.
[0056] As further schematically shown in FIG. 3, the exact angular
position of the length axes>of the heater lamp tubes 111 may be
adjusted as shown by .+-..DELTA..alpha. to optimize homogeneity of
heat transfer to the revolving backside of the metal circular wafer
carrier plate 115.
[0057] Further, in the inventive arrangement, there is provided in
the base arrangement 103, as already addressed for the known
arrangement according to FIG. 1, a piping of piping 131 for
circulating a cooling liquid medium within the base arrangement
103. As may further be seen in FIG. 2, the depth of the bin, formed
by rim surface 108 and substantially planar surface 107,
substantially accords with the thickness extent of the tubes 111,
so that the tubes 111 considered in direction of axis A, fill the
heater compartment 110 without contacting on one hand surfaces
108/107 and on the other hand the back surface 116 of metal
circular wafer carrier plate 115.
[0058] The addressed plate 115 is electrically isolated from base
arrangement 103 and the processing chamber with the wall 5 so that
(not shown) the wafer carrier plate 115 and thus the wafer carried
thereon, may be operated at any desired biasing electric signal. In
the embodiment, as exemplified in FIG. 2, the retaining arrangement
for the wafer 127 upon the metal circular wafer carrier plate 115
is realised by weight-ring 129 in analogy to the arrangement of
FIG. 1. It is also possible to provide the addressed weight-ring
129 with electrical contact, to apply to the wafer 127 via the
addressed weight-ring 129 a desired electrical biasing signal (not
shown).
[0059] With the help of the wafer holder and temperature
conditioning arrangement according to the present invention and as
exemplified with the help of the FIGS. 2 to 4, it becomes possible
to process wafers in the processing chamber at very high
temperature of at least 800.degree. C. and thereby to apply to such
wafer coatings of materials, which necessitate such very high
deposition temperatures. One of such layer materials is
lead-zirconatetitanate (PZT) material, which is deposited
preferably by cosputtering lead, zirconium and titanium, as for
thermo-generator appliances.
[0060] Due to the facts that according to the arrangement according
to the present invention, first the heat generated by the heater
lamp tubes 111 is directly transmitted to the metal circular wafer
carrier plate and that secondly the surface of the base arrangement
103, which forms the heat compartment is realised as a heat
reflector, the addressed heating of the wafer to very high
temperatures is realised. Thereby and compared with the arrangement
of FIG. 1, the thermical inertia between heater lamp tubes and
wafers are substantially reduced and additionally the overall
construction is simplified drastically.
* * * * *