U.S. patent application number 13/334515 was filed with the patent office on 2013-02-14 for semiconductor package and stack-type semiconductor package having the same.
This patent application is currently assigned to HYNIX SEMICONDUCTOR INC.. The applicant listed for this patent is Gyujei LEE, Kang Won LEE. Invention is credited to Gyujei LEE, Kang Won LEE.
Application Number | 20130037939 13/334515 |
Document ID | / |
Family ID | 47677027 |
Filed Date | 2013-02-14 |
United States Patent
Application |
20130037939 |
Kind Code |
A1 |
LEE; Gyujei ; et
al. |
February 14, 2013 |
SEMICONDUCTOR PACKAGE AND STACK-TYPE SEMICONDUCTOR PACKAGE HAVING
THE SAME
Abstract
A semiconductor package includes a semiconductor chip having a
first surface, a second surface which faces away from the first
surface, and through holes which pass through the first surface and
the second surface; a dielectric layer formed on one or more of the
first surface and the second surface and formed with grooves around
the through holes on a fourth surface of the dielectric layer
facing away from a third surface of the dielectric layer which is
attached to the semiconductor chip; through-silicon vias filling
the through holes; and bumps formed on the through-silicon vias and
on portions of the dielectric layer around the through-silicon vias
and filling the grooves.
Inventors: |
LEE; Gyujei; (Seoul, KR)
; LEE; Kang Won; (Icheon-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
LEE; Gyujei
LEE; Kang Won |
Seoul
Icheon-si |
|
KR
KR |
|
|
Assignee: |
HYNIX SEMICONDUCTOR INC.
Icheon-si
KR
|
Family ID: |
47677027 |
Appl. No.: |
13/334515 |
Filed: |
December 22, 2011 |
Current U.S.
Class: |
257/737 ;
257/E23.068 |
Current CPC
Class: |
H01L 2225/06544
20130101; H01L 24/16 20130101; H01L 2224/131 20130101; H01L
2224/13014 20130101; H01L 2224/0401 20130101; H01L 2224/13018
20130101; H01L 23/5384 20130101; H01L 2224/13147 20130101; H01L
2224/13014 20130101; H01L 23/3171 20130101; H01L 23/481 20130101;
H01L 2224/13022 20130101; H01L 2225/06513 20130101; H01L 2224/29099
20130101; H01L 2224/13025 20130101; H01L 2224/13009 20130101; H01L
23/538 20130101; H01L 2224/29099 20130101; H01L 25/0657 20130101;
H01L 23/3128 20130101; H01L 24/13 20130101; H01L 24/17 20130101;
H01L 2224/02377 20130101; H01L 2224/13184 20130101; H01L 2924/00014
20130101; H01L 2924/00014 20130101; H01L 2224/14181 20130101; H01L
2924/00012 20130101; H01L 2924/014 20130101; H01L 2224/13184
20130101; H01L 2224/131 20130101; H01L 2224/16146 20130101; H01L
2224/13018 20130101; H01L 2924/00014 20130101; H01L 2924/00014
20130101; H01L 23/293 20130101; H01L 23/52 20130101; H01L
2224/73204 20130101; H01L 24/14 20130101; H01L 23/5386 20130101;
H01L 2224/13147 20130101; H01L 2224/16237 20130101; H01L 2224/13024
20130101 |
Class at
Publication: |
257/737 ;
257/E23.068 |
International
Class: |
H01L 23/498 20060101
H01L023/498 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 9, 2011 |
KR |
10-2011-0078852 |
Claims
1. A semiconductor package comprising: a semiconductor chip having
a first surface, a second surface which faces away from the first
surface, and through holes which pass through the first surface and
the second surface; a dielectric layer formed on one or more of the
first surface and the second surface, wherein grooves are formed
around the through holes on a fourth surface of the dielectric
layer facing away from a third surface of the dielectric layer
which is attached to the semiconductor chip; through-silicon vias
filling the through holes; and bumps formed on the through-silicon
vias and on portions of the dielectric layer around the
through-silicon vias and filling the grooves.
2. The semiconductor package according to claim 1, wherein the
semiconductor chip comprises a circuit unit for storing and
processing data on the first surface.
3. The semiconductor package according to claim 1, wherein each of
the grooves has a polygonal or semicircular cross-sectional shape
when viewed from the side.
4. The semiconductor package according to claim 1, wherein each of
the grooves has a width that is greater at a bottom than a top.
5. The semiconductor package according to claim 4, wherein each of
the grooves has a trapezoidal cross-sectional shape in which a
width gradually increases from a top to a bottom when viewed from
the side.
6. The semiconductor package according to claim 4, wherein each of
the grooves has a bulb-like cross-sectional shape which has a neck
portion with a linear profile and a circular portion extending
downwards from the neck portion.
7. The semiconductor package according to claim 1, wherein each of
the grooves has a closed-loop shape which surrounds a corresponding
through-silicon via, when viewed from the top.
8. The semiconductor package according to claim 1, wherein a
plurality of separate grooves are formed around a corresponding
through-silicon via, when viewed from the top.
9. The semiconductor package according to claim 1, wherein center
portions of the bumps are formed to be thicker than the edge
portions of the bumps.
10. The semiconductor package according to claim 1, further
comprising: additional bumps formed on center portions of the
bumps.
11. The semiconductor package according to claim 1, wherein the
dielectric layer comprises one or more of an oxide layer and a
polymer layer.
12. A stack-type semiconductor package comprising: a plurality of
semiconductor packages including a semiconductor chip having a
first surface, a second surface which faces away from the first
surface, and through holes which pass through the first surface and
the second surface, a dielectric layer formed on one or more of the
first surface and the second surface and formed with grooves around
the through holes on a fourth surface of the dielectric layer
facing away from a third surface of the dielectric layer which is
attached to the semiconductor chip, through-silicon vias filling
the through holes, and bumps formed on the through-silicon vias and
on portions of the dielectric layer around the through-silicon vias
and filling the grooves, and stacked such that the through-silicon
vias and the bumps of the semiconductor packages are coupled to
each other; and connection components electrically connecting the
bumps and the through-silicon vias of the stack-type semiconductor
packages.
13. The stack-type semiconductor package according to claim 12,
wherein the semiconductor chip comprises a circuit unit for storing
and processing data on the first surface.
14. The stack-type semiconductor package according to claim 12,
wherein each of the grooves has a polygonal or semicircular
cross-sectional shape when viewed from the side.
15. The stack-type semiconductor package according to claim 12,
wherein each of the grooves has a width that is greater at a bottom
than a top.
16. The stack-type semiconductor package according to claim 15,
wherein each of the grooves has a trapezoidal cross-sectional shape
in which a width gradually increases from a top to a bottom when
viewed from the side.
17. The stack-type semiconductor package according to claim 15,
wherein each of the grooves has a bulb-like cross-sectional shape
which has a neck portion with a linear profile and a circular
portion extending downwards from the neck portion.
18. The stack-type semiconductor package according to claim 12,
wherein each of the grooves has a closed-loop shape which surrounds
a corresponding through-silicon via, when viewed from the top.
19. The stack-type semiconductor package according to claim 12,
wherein a plurality of separate grooves are defined around a
corresponding through-silicon via, when viewed from the top.
20. The stack-type semiconductor package according to claim 12,
wherein center portions of the bumps are formed to be thicker than
the edge portions of the bumps.
21. The stack-type semiconductor package according to claim 12,
wherein each semiconductor package further includes additional
bumps formed on center portions of the bumps.
22. The stack-type semiconductor package according to claim 12,
wherein the dielectric layer comprises one or more of an oxide
layer and a polymer layer.
23. The stack-type semiconductor package according to claim 12,
further comprising: a first dielectric layer formed on a lower
surface of a semiconductor package positioned lowermost among the
stack-type semiconductor packages in such a way as to expose the
through-silicon vias of the lowermost semiconductor package;
redistribution lines formed under the first dielectric layer and
electrically connected to the exposed through-silicon vias of the
lowermost semiconductor package; and a second dielectric layer
formed under the first dielectric layer including the
redistribution lines in such a way as to expose portions of the
redistribution lines.
24. The stack-type semiconductor package according to claim 23,
further comprising: external connection terminals formed on the
portions of the redistribution lines which are exposed through the
second dielectric line.
25. The stack-type semiconductor package according to claim 12,
further comprising: a substrate supporting the plurality of stacked
semiconductor packages and comprising connection pads which are
electrically connected to the through-silicon vias of the lowermost
semiconductor package among the plurality of semiconductor packages
stacked.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application claims priority to Korean patent
application number 10-2011-78852 filed on Aug. 9, 2011, which is
incorporated herein by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] With increasing demand for miniaturized and high-capacity
semiconductor package, various techniques for stack-type
semiconductor packages are being developed so as to achieve
miniaturization, high capacity and mounting efficiency.
[0003] The term "stack", which is referred to in the semiconductor
industry, means to vertically pile at least two semiconductor chips
or packages. Stacking semiconductor chips or packages helps to
realize a larger memory capacity and mounting area utilization
efficiency of the semiconductor packages.
[0004] As an example of a stack-type semiconductor package, a
structure using through-silicon vias has been suggested. A
stack-type semiconductor package using through-silicon vias
provides advantages in that, since electrical connections are
formed through through-silicon vias, the operation speed of a
semiconductor device can be increased and miniaturization is
possible. In the stack-type semiconductor package using
through-silicon vias, because signal transfer is implemented
through the through-silicon vias, junction reliability is very
important.
[0005] In order to electrically connect the semiconductor packages
to each other, bumps are formed on the upper surface and/or the
lower surface of each semiconductor chip in such a way as to be
connected to the through-silicon vias. If heat is applied in the
course of manufacturing the semiconductor packages, the
through-silicon vias and the bumps, which are formed of a metallic
substance with a coefficient of thermal expansion (CTE) greater
than silicon, may be deformed by heat. As a consequence, cracks may
occur in the interface between the through-silicon vias and the
bumps, and in a severe case, the bumps and the through-silicon vias
may be disconnected. That is, the anti-shearing reliability of the
interface between the bumps and the through-silicon vias may become
poor.
[0006] In addition, an adhesive component, which is formed between
semiconductor packages to physically attach a semiconductor package
to another semiconductor package, may be trapped between the
through-silicon vias (or bumps) of an upper semiconductor package
and the bumps (or through-silicon vias) of a lower semiconductor
package. As a consequence, after the semiconductor packages are
stacked, the electrical connections between the upper and lower
semiconductor packages may be disconnected, and thus electrical
reliability may deteriorate.
BRIEF SUMMARY OF THE INVENTION
[0007] Embodiments of the present invention are directed to a
semiconductor package with improved reliability and a stack-type
semiconductor package using the same.
[0008] In an embodiment of the present invention, a semiconductor
package includes: a semiconductor chip having a first surface, a
second surface which faces away from the first surface, and through
holes which pass through the first surface and the second surface;
a dielectric layer formed on any one of the one surface and the
other surface and defined with grooves around the through holes on
a fourth surface facing away from a third surface which is attached
to the semiconductor chip; through-silicon vias filling the through
holes; and bumps formed on the through-silicon vias and on portions
of the dielectric layer around the through-silicon vias and filling
the grooves.
[0009] The semiconductor chip may have on the one surface a circuit
unit for storing and processing data.
[0010] Each of the grooves may have a polygonal or semicircular
sectional shape when viewed from the side. Alternatively, each of
the grooves may have a width that is greater at a bottom than a
top. For example, each of the grooves may have a trapezoidal
sectional shape in which a width gradually increases from a top to
a bottom when viewed from the side or may have a bulb-like
sectional shape which has a neck portion with a linear profile and
a circular portion extending downwards from the neck portion.
[0011] Each of the grooves may have a closed-loop shape which
surrounds a corresponding through-silicon via, when viewed from the
top. Alternatively, a plurality of separate grooves may be defined
around a corresponding through-silicon via, when viewed from the
top.
[0012] Each of the bumps may project more on a center portion than
on peripheral portions.
[0013] The semiconductor package may further include additional
bumps formed on center portions of the bumps.
[0014] The dielectric layer may include at least any one of an
oxide layer and a polymer layer.
[0015] In an embodiment of the present invention, a stack-type
semiconductor package includes: a plurality of semiconductor
packages each including a semiconductor chip having one surface,
the other surface which faces away from the one surface, and
through holes which pass through the one surface and the other
surface, a dielectric layer formed on any one of the one surface
and the other surface and defined with grooves around the through
holes on a fourth surface facing away from a third surface which is
attached to the semiconductor chip, through-silicon vias filling
the through holes, and bumps formed on the through-silicon vias and
on portions of the dielectric layer around the through-silicon vias
and filling the grooves, and stacked such that the through-silicon
vias and the bumps of the semiconductor packages are connected to
each other; and connection components electrically connecting the
bumps and the through-silicon vias of the stack-type semiconductor
packages with each other.
[0016] The semiconductor chip may have on the one surface a circuit
unit for storing and processing data.
[0017] Each of the grooves may have a polygonal or semicircular
sectional shape when viewed from the side. Alternatively, each of
the grooves may have a width that is greater at a bottom than a
top. For example, each of the grooves may have a trapezoidal
sectional shape in which a width gradually increases from a top to
a bottom when viewed from the side or may have a bulb-like
sectional shape which has a neck portion with a linear profile and
a circular portion extending downwards from the neck portion.
[0018] Each of the grooves may have a closed-loop shape which
surrounds a corresponding through-silicon via, when viewed from the
top. Alternatively, a plurality of separate grooves may be defined
around a corresponding through-silicon via, when viewed from the
top.
[0019] Each of the bumps may project more on a center portion than
on peripheral portions.
[0020] Each semiconductor package may further include additional
bumps formed on center portions of the bumps.
[0021] The dielectric layer may include at least any one of an
oxide layer and a polymer layer.
[0022] The stack-type semiconductor package may further include: a
first dielectric layer formed on a lower surface of a semiconductor
package positioned lowermost among the stack-type semiconductor
packages in such a way as to expose the through-silicon vias of the
lowermost semiconductor package; redistribution lines formed under
the first dielectric layer and electrically connected to the
exposed through-silicon vias of the lowermost semiconductor
package; and a second dielectric layer formed under the first
dielectric layer including the redistribution lines in such a way
as to expose portions of the redistribution lines. Besides, the
stack-type semiconductor package may further include: external
connection terminals formed on the portions of the redistribution
lines which are exposed through the second dielectric line.
[0023] The stack-type semiconductor package may further include: a
substrate supporting the plurality of semiconductor packages
stacked upon one another and having connection pads which are
electrically connected to the through-silicon vias of the lowermost
semiconductor package among the plurality of semiconductor packages
stacked.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] FIG. 1 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0025] FIG. 2 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0026] FIG. 3 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0027] FIG. 4 is a plan view illustrating a through-silicon via, a
bump and a groove in accordance with an embodiment of the present
invention.
[0028] FIG. 5 is a plan view illustrating a through-silicon via, a
bump and a groove in accordance with an embodiment of the present
invention.
[0029] FIG. 6 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0030] FIG. 7 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0031] FIG. 8 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0032] FIG. 9 is a cross-sectional view illustrating a stack-type
semiconductor package in accordance with an embodiment of the
present invention.
[0033] FIG. 10 is a cross-sectional view illustrating a stack-type
semiconductor package in accordance with an embodiment of the
present invention.
[0034] FIG. 11 is a perspective view illustrating an electronic
apparatus having the semiconductor package according to an
embodiment of the present invention.
[0035] FIG. 12 is a block diagram showing an example of the
electronic apparatus having the semiconductor package according to
an embodiment of the present invention.
DESCRIPTION OF SPECIFIC EMBODIMENTS
[0036] Hereafter, specific embodiments of the present invention
will be described in detail with reference to the accompanying
drawings.
[0037] It is to be understood herein that the drawings are not
necessarily to scale and in some instances proportions may have
been exaggerated in order to more clearly depict certain features
of the invention.
[0038] FIG. 1 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0039] Referring to FIG. 1, a semiconductor package 10 in
accordance with an embodiment of the present invention includes a
semiconductor chip 100, a dielectric layer 200, through-silicon
vias 300, and bumps 400.
[0040] The semiconductor chip 100 has a first surface 110, a second
surface 120, side surfaces 130, through holes 140, bonding pads
150, and a circuit unit 160.
[0041] The first surface 110 faces away from the second surface
120, and the side surfaces 130 connect the first surface 110 and
the second surface 120. The bonding pads 150 are formed on the
first surface 110. The circuit unit 160 is formed on the first
surface 110 and is electrically connected to the bonding pads 150.
For example, the circuit unit 160 includes elements such as
transistors, capacitors and resistors to store and process
data.
[0042] The through holes 140 pass through the first surface 110 and
the second surface 120 of the semiconductor chip 100. In an
embodiment of the present invention, the through holes 140 pass
through the bonding pads 150 which are formed on the first surface
110. Alternatively, the through holes 140 may not pass through the
bonding pads 150 and may pass through portions of the circuit unit
160 which are electrically connected to the bonding pads 150.
[0043] When viewed from the top, the through holes 140 may have a
circular sectional shape. Alternatively, the through holes 140 may
have various sectional shapes such as an elliptical shape, a
quadrangular shape and a pentagonal shape. A dielectric layer 170
is formed on the sidewall of the through holes 140. The dielectric
layer 170 may be an oxide layer or a nitride layer. Alternatively,
the dielectric layer 170 may be an organic layer.
[0044] In an embodiment of the present invention, the dielectric
layer 200 is formed on the second surface 120 of the semiconductor
chip 100, and has a third surface 210 which is attached to the
semiconductor chip 100, a fourth surface 220 which faces away from
the third surface 210, and grooves 230 which are formed adjacent to
the through holes 140 on the fourth surface 220. The dielectric
layer 200 may include any one of an oxide layer and a polymer
layer.
[0045] Referring to FIG. 4, when viewed from the top, the grooves
230 may be formed around respective through-silicon vias 300 in
closed-loop shapes which surround the respective through-silicon
vias 300. Alternatively, as shown in FIG. 5, a plurality of
separate grooves 230 may be formed around each through-silicon via
300.
[0046] In an embodiment of the present invention, when viewed from
the side, each groove 230 has a quadrangular cross-sectional shape.
Although it is illustrated and described in an embodiment of the
present invention that each groove 230 has a quadrangular
cross-sectional shape, it is to be noted that the present invention
is not limited to such. For example, when viewed from the side,
each groove 230 may have a polygonal cross-sectional shape or a
semicircular cross-sectional shape. Besides, as shown in FIGS. 2
and 3, when viewed from the side, each groove 230 may have a
cross-sectional shape which has a width greater at the bottom than
at the top. For example, as shown in FIG. 2, each groove 230 may
have a trapezoidal cross-sectional shape in which the width
gradually increases from the top to the bottom, or, as shown in
FIG. 3, each groove 230 may have a bulb-like cross-sectional shape
which has a neck portion 230A with a linear profile and a circular
portion 230B extending downwards from the neck portion 230A.
[0047] The through-silicon vias 300 fill the through holes 140. As
the material of the through-silicon vias 300, copper or tungsten
may be used.
[0048] The bumps 400 are formed on the through-silicon vias 300 and
portions of the dielectric layer 200 around the through-silicon
vias 300 and fill the grooves 230. The bumps 400 may be formed of
the same material as the through-silicon vias 300, for example,
copper or tungsten. The bumps 400, which are formed on the second
surface 120 facing away from the first surface 110 formed with the
circuit unit 160, may be called `back-side bumps`.
[0049] The bumps 400 may be formed by forming a metal layer on the
through-silicon vias 300 and the dielectric layer 200 through a
plating process and by patterning the metal layer through a
photolithographic process such that the metal layer remains on the
through-silicon vias 300 and a portion of the dielectric layer 200
around the through-silicon vias 300. Here, due to the fact that the
grooves 230 are formed in the dielectric layer 200, the center
portions of the bumps 400 may be formed to be thicker than the edge
portions of the bumps 400. In order to form the bumps 400 more
projecting on the center portions than on the edge portions, a
process for slightly etching the bumps 400 may be performed.
[0050] Due to the grooves 230 under the bumps 400, a stress applied
to the interface between the bumps 400 and the underlying layer may
decrease, thereby improving the anti-shearing reliability of the
interface between the bumps 400 and the through-silicon vias 300.
In particular, as shown in FIGS. 2 and 3, in the case where the
grooves 230 are formed such that the width of each groove 230 is
greater at the bottom than at the top, a tensile stress and a
compression stress that are applied in the lengthwise direction of
the through-silicon vias 300 may decrease.
[0051] FIG. 6 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0052] The semiconductor package in accordance with an embodiment
of the present invention has a structure in which additional bumps
500 are formed on bumps 400. A portion of the semiconductor package
according to an embodiment of the present invention may have
substantially the same configuration as the semiconductor package
according to the embodiment described above. Therefore, repeated
descriptions for the same components will be omitted herein, and
the same terms and the same reference numerals will be used to
refer to the same components.
[0053] Referring to FIG. 6, a semiconductor package 10 in
accordance with an embodiment of the present invention includes a
semiconductor chip 100, a dielectric layer 200, through-silicon
vias 300, bumps 400, and additional bumps 500.
[0054] The additional bumps 500 are formed, for example, on the
center portions of the bumps 400. In addition, the additional bumps
500 may be formed of the same material as the bumps 400, for
example, copper or tungsten.
[0055] Since the additional bumps 500 are formed on the center
portions of the bumps 400, a probability of formation of a poor
junction caused due to an adhesive component when stacking
semiconductor packages may decrease.
[0056] FIG. 7 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0057] The semiconductor package in accordance with an embodiment
of the present invention has a structure in which a dielectric
layer 200 and bumps 400 are formed on a first surface 110 of a
semiconductor chip 100. A portion of the semiconductor package
according to an embodiment of the present invention may have
substantially the same configuration as the semiconductor package
according to the embodiment described above. Therefore, repeated
descriptions for the same components will be omitted herein, and
the same terms and the same reference numerals will be used to
refer to the same components.
[0058] Referring to FIG. 7, in the present embodiment, a dielectric
layer 200 is formed on a first surface 110 of a semiconductor chip
100 on which a circuit unit 160 is formed, and has a third surface
210 which is attached to the semiconductor chip 100, a fourth
surface 220 which faces away from the third surface 210, and
grooves 230 which are formed on the fourth surface 220 around
through holes 140.
[0059] Bumps 400 are formed on through-silicon vias 300 and
portions of the dielectric layer 200 around the through-silicon
vias 300 and fill the grooves 230. The bumps 400, which are formed
on the first surface 110 formed with the circuit unit 160, may be
called `front-side bumps`.
[0060] FIG. 8 is a cross-sectional view illustrating a
semiconductor package in accordance with an embodiment of the
present invention.
[0061] The semiconductor package in accordance with an embodiment
of the present invention has a structure in which dielectric layers
200 and bumps 400 are formed on a first surface 110 and a second
surface 120 of a semiconductor chip 100. A portion of the
semiconductor package according to an embodiment of the present
invention may have substantially the same configuration as the
semiconductor package according to the embodiment described above.
Therefore, repeated descriptions for the same components will be
omitted herein, and the same terms and the same reference numerals
will be used to refer to the same components.
[0062] Referring to FIG. 8, dielectric layers 200 are respectively
formed on a first surface 110 of a semiconductor chip 100 on which
a circuit unit 160 is formed and on a second surface of the
semiconductor chip 100 which faces away from the first surface 110.
Each of the dielectric layers 200 has a third surface 210 which is
attached to the semiconductor chip 100, a fourth surface 220 which
faces away from the third surface 210, and grooves 230 which are
formed on the fourth surfaces 220 around through holes 140.
[0063] Bumps 400 are formed on through-silicon vias 300 and
portions of the dielectric layers 200 around the through-silicon
vias 300 and fill the grooves 230.
[0064] FIG. 9 is a cross-sectional view illustrating a stack-type
semiconductor package in accordance with an embodiment of the
present invention.
[0065] Referring to FIG. 9, semiconductor packages 10 are prepared.
Each semiconductor package 10 has through-silicon vias 300, a
dielectric layer 200 in which grooves 230 are formed around the
through-silicon vias 300, and bumps 400 which are formed on the
through-silicon vias 300 and portions of the dielectric layer 200
around the through-silicon vias 300 and fill the grooves 230. The
bumps 400 of each semiconductor package 10 and the through-silicon
vias 300 of another semiconductor package 10 are connected to each
other by the medium of connection components 20. Accordingly, a
plurality of semiconductor packages 10, for example, three
semiconductor packages 10 are stacked. Adhesive components 30 are
interposed between the stack-type semiconductor packages 10. The
connection components 20 may include solders, and the adhesive
components 30 may include nonconductive pastes.
[0066] A first dielectric layer 40 is formed on the lower surface
of the semiconductor package 10 positioned lowermost among the
stack-type semiconductor packages 10 in such a way as to expose the
through-silicon vias 300 of the lowermost semiconductor package 10.
Redistribution lines 50, which are electrically connected to the
through-silicon vias 300 of the lowermost semiconductor package 10,
are formed under the first dielectric layer 40, and a second
dielectric layer 60 is formed under the first dielectric layer 40
including the redistribution lines 50 in such a way as to expose
portions of the redistribution lines 50. External connection
terminals 70 are attached to the portions of the redistribution
lines 50 which are exposed through the second dielectric layer
60.
[0067] FIG. 10 is a cross-sectional view illustrating a stack-type
semiconductor package in accordance with an embodiment of the
present invention.
[0068] Referring to FIG. 10, semiconductor packages 10 are
prepared. Each semiconductor package 10 has through-silicon vias
300, a dielectric layer 200 in which grooves 230 are defined around
the through-silicon vias 300, and bumps 400 which are formed on the
through-silicon vias 300 and portions of the dielectric layer 200
around the through-silicon vias 300 and fill the grooves 230. The
bumps 400 of each semiconductor package 10 and the through-silicon
vias 300 of another semiconductor package 10 are connected to each
other by the medium of connection components 20. Accordingly, a
plurality of semiconductor packages 10, for example, three
semiconductor packages 10 are stacked. Adhesive components 30 are
interposed between the stack-type semiconductor packages 10. The
connection components 20 may include solders, and the adhesive
components 30 may include nonconductive pastes.
[0069] The stack-type semiconductor packages 10 are mounted to a
substrate 80 in such a manner that the through-silicon vias 300 of
a semiconductor package 10 positioned lowermost are electrically
connected to connection pads 81 of the substrate 80.
[0070] The through-silicon vias 300 of the lowermost semiconductor
package 10 and the connection pads 81 of the substrate 80 are
electrically connected to each other by connection components 90.
In order to improve the reliability of joints, an underfill
component 92 is interposed between the lowermost semiconductor
package 10 and the substrate 80.
[0071] A molding part 94 is formed on the upper surface of the
substrate 80 including the stack-type semiconductor packages
10.
[0072] As is apparent from the above description, according to an
embodiment of the present invention, since grooves are formed in a
dielectric layer which is formed under bumps, a stress applied to
the interface between bumps and through-silicon vias may decrease,
whereby the anti-shearing reliability of the interface between the
bumps and the through-silicon vias can be improved. Also, because
the center portions of the bumps have convex shapes, a probability
of formation of an adhesive component between the bumps and the
through-silicon vias (or bumps) may decrease when stacking
semiconductor packages, whereby the reliability of a stack-type
semiconductor package using semiconductor packages can be
improved.
[0073] The semiconductor packages and the stack-type semiconductor
packages described above may be applied to various package
modules.
[0074] FIG. 11 is a perspective view illustrating an electronic
apparatus having the semiconductor package according to an
embodiment of the present invention.
[0075] Referring to FIG. 11, the semiconductor packages according
to an embodiment of the present invention may be applied to an
electronic apparatus 1000 such as a portable phone. The electronic
apparatus 1000 is not limited to the portable phone shown in FIG.
11, and may include various electronic appliances, for example,
such as a mobile electronic appliance, a laptop computer, a
notebook computer, a portable multimedia player (PMP), an MP3
player, a camcorder, a web tablet, a wireless phone, a navigator, a
personal digital assistant (PDA), and so forth.
[0076] FIG. 12 is a block diagram showing an example of the
electronic apparatus having the semiconductor package according to
the present invention.
[0077] Referring to FIG. 12, an electronic system 1300 may include
a controller 1310, an input/output unit 1320, and a memory 1330.
The controller 1310, the input/output unit 1320 and the memory 1330
may be coupled to one another through a bus 1350. The bus 1350
serves as a path through which data move. For example, the
controller 1310 may include one or more of a microprocessor, a
digital signal processor, a microcontroller, and a logic device
capable of performing the same functions as these components. The
controller 1310 and the memory 1330 may include a semiconductor
package according to the present invention. The input/output unit
1320 may include at least one selected among a keypad, a keyboard,
a display device, and so forth. The memory 1330 is a device for
storing data. The memory 1330 may store data and/or commands to be
executed by the controller 1310, and the likes. The memory 1330 may
include a volatile memory device and/or a nonvolatile memory
device. Otherwise, the memory 1330 may be constituted by a flash
memory. For example, a flash memory to which the technology of the
present invention is applied may be mounted to an information
processing system such as a mobile terminal or a desk top computer.
The flash memory may be constituted by a semiconductor disc device
(SSD). In this case, the electronic system 1300 may stably store a
large amount of data in a flash memory system. The electronic
system 1300 may further include an interface 1340 configured to
transmit and receive data to and from a communication network. The
interface 1340 may be a wired or wireless type. For example, the
interface 1340 may include an antenna or a wired or wireless
transceiver. Further, while not shown, a person skilled in the art
will readily appreciate that the electronic system 1300 may be
additionally provided with an application chipset, a camera image
processor (CIS), an input/output unit, etc.
[0078] Although specific embodiments of the present invention have
been described for illustrative purposes, those skilled in the art
will appreciate that various modifications, additions and
substitutions are possible, without departing from the scope and
the spirit of the invention as disclosed in the accompanying
claims.
* * * * *