U.S. patent application number 13/632856 was filed with the patent office on 2013-01-31 for method for fabricating semiconductor light-emitting device.
This patent application is currently assigned to Epistar Corporation. The applicant listed for this patent is Yen-Wen Chen, Ming-Ta Chin, Min-Hsun Hsieh, Ta-Cheng Hsu, Ya-ju LEE, Chung-Yuan Li, Lo Wu-Tsung. Invention is credited to Yen-Wen Chen, Ming-Ta Chin, Min-Hsun Hsieh, Ta-Cheng Hsu, Ya-ju LEE, Chung-Yuan Li, Lo Wu-Tsung.
Application Number | 20130029440 13/632856 |
Document ID | / |
Family ID | 38532412 |
Filed Date | 2013-01-31 |
United States Patent
Application |
20130029440 |
Kind Code |
A1 |
LEE; Ya-ju ; et al. |
January 31, 2013 |
METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE
Abstract
A semiconductor light-emitting device is disclosed. The
semiconductor light-emitting device comprises a multilayer
epitaxial structure disposed on a substrate. The substrate has a
predetermined lattice direction perpendicular to an upper surface
thereof, wherein the predetermined lattice direction is angled
toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from
[ 100] so that the upper surface of the substrate comprises at
least two lattice planes with different lattice plane directions.
The multilayer epitaxial structure has a roughened upper surface
perpendicular to the predetermined lattice direction. The invention
also discloses a method for fabricating a semiconductor
light-emitting device.
Inventors: |
LEE; Ya-ju; (Hsinchu City,
TW) ; Hsu; Ta-Cheng; (Hsinchu City, TW) ;
Chin; Ming-Ta; (Hsinchu City, TW) ; Chen;
Yen-Wen; (Hsinchu City, TW) ; Wu-Tsung; Lo;
(Hsinchu City, TW) ; Li; Chung-Yuan; (Hsinchu
City, TW) ; Hsieh; Min-Hsun; (Hsinchu City,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
LEE; Ya-ju
Hsu; Ta-Cheng
Chin; Ming-Ta
Chen; Yen-Wen
Wu-Tsung; Lo
Li; Chung-Yuan
Hsieh; Min-Hsun |
Hsinchu City
Hsinchu City
Hsinchu City
Hsinchu City
Hsinchu City
Hsinchu City
Hsinchu City |
|
TW
TW
TW
TW
TW
TW
TW |
|
|
Assignee: |
Epistar Corporation
Hsinchu
TW
|
Family ID: |
38532412 |
Appl. No.: |
13/632856 |
Filed: |
October 1, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11727378 |
Mar 26, 2007 |
8278672 |
|
|
13632856 |
|
|
|
|
Current U.S.
Class: |
438/29 ;
257/E33.003 |
Current CPC
Class: |
H01L 33/22 20130101;
H01L 33/16 20130101 |
Class at
Publication: |
438/29 ;
257/E33.003 |
International
Class: |
H01L 33/22 20100101
H01L033/22 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 27, 2006 |
TW |
95110538 |
Claims
1. A manufacturing method of a semiconductor light-emitting device,
comprising: providing a substrate having an upper surface with a
predetermined direction perpendicular to the upper surface thereof,
wherein the predetermined direction is selected from a group
consisting of directions toward [0 11] with a first angle from
[100], [01 1] with the first angle from [100], [011] with a second
angle from [ 100], and [0 11] with the second angle from [ 100],
wherein the first or the second angle is between 6.degree. and
55.degree.; and forming a multilayer epitaxial structure on the
upper surface, wherein the multilayer epitaxial structure has a
rough upper surface substantially perpendicular to the
predetermined direction and wherein the upper surfaces of the
multilayer epitaxial structure and the substrate have substantially
the same surface topography.
2. The manufacturing method as claimed in claim 1, further
comprising roughening the upper surface of the multilayer epitaxial
structure.
3. The manufacturing method as claimed in claim 1, wherein the
multilayer epitaxial structure comprises an n-type semiconductor
layer, a p-type semiconductor layer and an active layer interposed
therebetween.
4. The manufacturing method as claimed in claim 1, wherein the
predetermined direction is defined by having a group III atom
located at the [000] position of the coordinate of the unit cell as
the origin.
5. The manufacturing method as claimed in claim 1, wherein the
first angle or the second angle is 15.degree..
6. The manufacturing method as claimed in claim 1, wherein the
roughened upper surface of the multilayer epitaxial structure has a
roughening depth not less than 0.05 .mu.m.
7. The manufacturing method as claimed in claim 1, wherein the
roughened upper surface of the multilayer epitaxial structure has a
roughening depth between 0.05 .mu.m and 1 .mu.m.
8. The manufacturing method as claimed in claim 2, wherein the step
of roughening the upper surface of the multilayer epitaxial
structure is performed by wet etching using HCl and/or
H.sub.3PO.sub.4 as an etchant.
9. The manufacturing method as claimed in claim 2, wherein the step
of roughening the upper surface of the multilayer epitaxial
structure is performed by dry etching.
10. The manufacturing method as claimed in claim 1, wherein the
whole upper surface is generally extending along a horizontal
direction.
11. The manufacturing method as claimed in claim 1, wherein the
upper surface comprises at least two lattice planes with different
lattice plane directions.
12. The manufacturing method as claimed in claim 11, wherein the
predetermined direction is different from the lattice plane
directions.
Description
REFERENCE TO RELATED APPLICATION
[0001] The present application is a divisional application of U.S.
patent application Ser. No. 11/727,378, filed on Mar. 26, 2007, now
pending, which claims the right of priority based on Taiwan
Application Serial Number 095110538, filed Mar. 27, 2006, the
disclosure of which is incorporated herein by reference in their
entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Technical Field
[0003] The invention relates to fabrication technology for a
semiconductor light-emitting device, and more particularly to a
semiconductor light-emitting device with increased light extraction
efficiency and the fabrication method thereof.
[0004] 2. Description of the Related Art
[0005] Semiconductor light-emitting devices, such as light-emitting
diodes (LEDs), have been become popular due to the small size,
light weight, and low power consumption along with the increased
light-emitting efficiency. Typically, an LED comprises a
semiconductor p-n diode. After a bias applies to both ends of the
p-n junction for passing current therethrough, electrons and holes
are combined to release light. To increase LED's reliability and
lower its energy consumption, increased light-emitting efficiency
thereof is required.
[0006] Light-emitting efficiency of LEDs is also known as external
quantum efficiency of a device, which is the product of internal
quantum efficiency and light extraction efficiency of the LED. The
internal quantum efficiency of the LED is the electric-optical
conversion efficiency thereof determined by material properties and
quality. Additionally, the light extraction efficiency is
determined by the structure, the light absorption index and
refractive index of LEDs. Conventionally, the internal quantum
efficiency is raised by improving the quality of epitaxial layers
or changing the epitaxial structure, to suppress the electric
energy converting to thermal energy. Nevertheless, to further
increase the light-emitting efficiency of LEDs, another important
concern is how to increase light extraction efficiency thereof.
[0007] It has been proposed to roughen the profile of an LED to
increase the light reflection and scattering, thereby increasing
light-emitting efficiency of the LED. For example, an LED with a
roughened surface can be accomplished by natural lithography, such
as ion beam etching using randomly arranged polystyrene spheroids
as a mask, but it may result in uneven rough surface or damage the
lattice structure of the active layer of the LED and thereby
reducing the light extraction efficiency of the LED. Another method
for surface roughening is wet etching. In this method, an epitaxial
layer for light emission is grown on a substrate with unselected
lattice plane. The surface of the epitaxial layer is etched by
suitable etchant with a metal mask. Since wet etching is isotropic,
the epitaxial layer is etched in not only a vertical direction but
also horizontal direction, so the patterns on the mask cannot
effectively transfer to the surface of the epitaxial layer and
thereby reducing the degree of roughening. Moreover, both ion beam
etching and wet etching require an additional process step for
formation of an etch mask and the process steps of both are
complicated.
[0008] The surface roughening degree is proportioned to light
extraction efficiency. Therefore, there is a need to develop an
improved fabrication method for a semiconductor light-emitting
device with higher degree of surface roughening and thereby
increasing light extraction efficiency.
BRIEF SUMMARY OF THE INVENTION
[0009] A detailed description is given in the following embodiments
with reference to the accompanying drawings. An embodiment of a
semiconductor light-emitting device and a fabrication method
thereof are provided. The semiconductor light-emitting device
comprises a multilayer epitaxial structure disposed on a
semiconductor substrate. The semiconductor substrate has a
predetermined lattice direction perpendicular to an upper surface
thereof, wherein the predetermined lattice direction is oriented
toward [0 11] or [01 1] from [100] with a first angle, or oriented
toward [011] or [0 11] from [ 100] with a second angle, so the
upper surface of the semiconductor substrate comprises at least two
lattice planes with different lattice plane directions. A
multilayer epitaxial structure disposed on the semiconductor
substrate therefore has a roughened upper surface perpendicular to
the predetermined lattice directions.
[0010] An embodiment of a method for fabricating a semiconductor
light-emitting device comprises providing a semiconductor substrate
having a predetermined lattice direction perpendicular to an upper
surface thereof, wherein the predetermined lattice direction is
oriented toward [0 11] or [01 1] from [100] with a first angle, or
oriented toward [011] or [0 11] from [ 100]with a second angle, so
the upper surface of the semiconductor substrate comprises at least
two lattice planes with different lattice plane directions. A
multilayer epitaxial structure is formed on the semiconductor
substrate. Surface roughening is performed on an upper surface of
the multilayer epitaxial structure on the semiconductor substrate
by etching.
BRIEF DESCRIPTION OF DRAWINGS
[0011] The invention can be more fully understood by reading the
subsequent detailed description and examples with references made
to the accompanying drawings, wherein:
[0012] FIGS. 1A to 1B are cross sections of an embodiment of a
method for fabricating a semiconductor light-emitting device;
[0013] FIG. 1C is a magnified diagram showing a multilayer
epitaxial structure of FIG. 1B;
[0014] FIG. 1D is a plan view SEM (scanning electron microscope)
image of a multilayer epitaxial structure of FIG. 1B;
[0015] FIG. 2 is a magnified diagram showing a part of the
semiconductor substrate shown in FIGS. 1A and 1B; and
[0016] FIGS. 3A and 3B show several lattice planes of a cubic
crystal lattice structure, respectively.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0017] The following description is provided for the purpose of
illustrating the general principles of the invention and should not
be taken in a limiting sense. The scope of the invention is best
determined by reference to the appended claims.
[0018] FIG. 1B illustrates an embodiment of a semiconductor
light-emitting device. The semiconductor light-emitting device,
such as a light-emitting diode (LED), comprises a semiconductor
substrate 100, a multilayer epitaxial structure 101, and upper and
lower electrode plates 110 and 112. In this embodiment, the
semiconductor substrate 100 is provided for formation of the
multilayer epitaxial structure 101, comprising a III-V group
compound semiconductor material, such as GaAsP, GaAs, GaP or the
like. The multilayer epitaxial structure 101 is disposed on the
semiconductor substrate 100 and comprises an n-type semiconductor
layer 102, a p-type semiconductor layer 106, and an active layer
104 interposed therebetween. In some embodiments, the arrangements
of the n-type and p-type semiconductor layers 102 and 106 can be
interchanged. That is, the p-type semiconductor layer 106 is
disposed at the bottom of the multilayer epitaxial structure 101
and the n-type semiconductor layer 102 is disposed on the top of
the multilayer epitaxial structure 101. In the embodiment, the
n-type and p-type semiconductor layers 102 and 106 act as cladding
layers of the LED, comprising III-V group compound semiconductor
materials, such as AlGaInP, AlGaAs or other ternary or quaternary
III-V group compound semiconductor materials. The active layer 104
may comprise [Al.sub.xGa.sub.1-x].sub.0.5In.sub.0.5P or other
materials matched with the n-type and p-type semiconductor layers
102 and 106. The upper and lower electrode plates 110 and 112 are
disposed on the top of the multilayer epitaxial structure 101 and
the bottom of the semiconductor substrate 100 respectively.
[0019] In particular, FIG. 2 illustrates a magnified diagram
showing a part of semiconductor substrate shown in FIGS. 1A and 1B.
The semiconductor substrate 100 has a predetermined lattice
direction [abc] substantially perpendicular to an upper surface S1
thereof so the upper surface S1 of the semiconductor substrate 100
comprises at least two lattice planes, such as (100) and (001)
lattice planes, to form an uneven rough surface. In this
embodiment, the predetermined lattice direction [abc] is defined by
having a group III atom located at the [000] position of the
coordinate of the unit cell as the origin and then oriented toward
[0 11] or [01 1] with an angle from [100], wherein the angle is
between 6.degree. and 55.degree., and 15.degree. is preferred. In
some embodiments, the predetermined lattice direction [abc] may be
oriented toward [011] or [0 11] with an angle from [ 100], wherein
the angle is also between 6.degree. and 55.degree., and 15.degree.
is preferred.
[0020] As shown in FIG. 1B, the multilayer epitaxial structure 101
also has the predetermined lattice direction [abc] substantially
perpendicular to an upper surface S3 thereof so the upper surface
S3 of the multilayer epitaxial structure 101 and the upper surface
S1 of the semiconductor substrate 100 have substantially the same
surface topography. However, the roughening degree of the upper
surface S3 exceeds that of the upper surface S1 which will be
described subsequently.
[0021] FIGS. 1A to 1B describe a method for fabricating a
semiconductor light-emitting device. In FIG. 1A, a semiconductor
substrate 100 is provided. The semiconductor substrate 100 has a
predetermined lattice direction [abc] substantially perpendicular
to an upper surface S1 thereof so the upper surface S1 of the
semiconductor substrate 100 comprises at least two lattice planes,
such as (100) and (001) lattice planes, to form an uneven rough
surface, as shown in FIG. 2. FIG. 3A shows the diagram of the
lattice planes of a cubic crystal structure. In the embodiment, the
predetermined lattice direction [abc] of the semiconductor
substrate 100 may be oriented toward [0 11] with an angle .theta.
from [100], or toward [011] with the angle .theta. from [ 100],
wherein .theta. is between 6.degree. and 55.degree., and 15.degree.
is preferred, as the dotted arrow labeled in FIG. 3A. The lattice
planes and directions relative to the predetermined lattice
direction [abc] are shown in FIG. 3A for clarification.
[0022] FIG. 3B shows the diagram of the lattice planes of a cubic
crystal structure. In some embodiments, the predetermined lattice
direction [abc] of the semiconductor substrate 100 may be oriented
toward [01 1] with an angle .theta. from [100], or toward [0 11]
with the angle .theta. from [ 100], wherein the angle .theta. is
between 6.degree. and 55.degree., and 15.degree. is preferred, as
the dotted arrow labeled in FIG. 3B. The lattice planes and
directions relative to the predetermined lattice direction [abc]
are also shown in FIG. 3B for clarification.
[0023] The semiconductor substrate 100 is provided for subsequent
formation of a multilayer epitaxial structure 101, comprising an
III-V group compound semiconductor material, such as GaAsP, GaAs,
GaP or the like.
[0024] Next, a multilayer epitaxial structure 101 is formed on the
semiconductor substrate 100, which having the predetermined lattice
direction [abc], also has the predetermined lattice direction [abc]
perpendicular to an upper surface S2 thereof by epitaxially grown
on the substrate 100. That is, the upper surface S2 of the
multilayer epitaxial structure 101 and the upper surface S1 of the
semiconductor substrate 100 have substantially the same surface
topography. In the embodiment, the multilayer epitaxial structure
101 can be formed by liquid phase epitaxy (LPE), metal organic
vapor phase epitaxy (MOVPE), or other known epitaxial methods.
[0025] The multilayer epitaxial structure 101 may comprise an
n-type semiconductor layer 102, a p-type semiconductor layer 106
and an active layer 104 interposed therebetween. In some
embodiments, the p-type semiconductor layer 106 is disposed at the
bottom of the multilayer epitaxial structure 101 and the n-type
semiconductor layer 102 is disposed on the top of the multilayer
epitaxial structure 101. In this embodiment, the n-type and p-type
semiconductor layers 102 and 106 may comprise III-V group compound
semiconductor materials, such as AlGaInP, AlGaAs or other ternary
or quaternary III-V group compound semiconductor materials. The
active layer 104 may comprise
[Al.sub.xGa.sub.1-x].sub.0.5In.sub.0.5P or other materials matched
for the n-type and p-type semiconductor layers 102 and 106.
[0026] The upper surface S2 of the multilayer epitaxial structure
101 on the semiconductor substrate 100 is roughened by dry or wet
etching. For example, wet etching can be performed on the upper
surface S2 of the multilayer epitaxial structure 101 using HCl and
H.sub.3PO.sub.4 as an etchant for about 20 seconds. FIG. 1D is a
top view of SEM (Scanning Electron Microscope) image of a
multilayer epitaxial structure shown in FIG. 1B. The upper surface
S2 of the multilayer epitaxial structure 101 comprises at least two
different lattice planes, such as (100) and (001) lattice planes.
The surface structure with different lattice planes may act as an
etch mask, so an additional etch mask is not required. Since the
etching rate of the (100) and (001) lattice planes are different,
the multilayer epitaxial structure 101 may have an upper surface S3
having substantially the same surface topography as the original
upper surface S2 thereof and the upper surface S1 of the
semiconductor substrate 100 after etching, but the roughening
degree of the upper surface S3 exceeds that of the original upper
surface S2 and the upper surface S1. FIG. 1C is a magnified diagram
showing the upper surface S3 of the multilayer epitaxial structure
101. In the embodiment, the roughened upper surface S3 of the
multilayer epitaxial structure 101 has a roughening depth not less
than 0.05 .mu.m, and between 0.05 .mu.m and 1 .mu.m is
preferred.
[0027] Upper and lower electrode plates 110 and 112 are
respectively formed on the upper surface S3 of the multilayer
epitaxial structure 101 and the lower surface of the semiconductor
substrate 100 by conventional process steps. Note that the
arrangement of the upper and lower electrode plates 110 and 112 can
be varied with different device design.
[0028] Since the multilayer epitaxial structure 101 is formed by
epitaxial growth along a predetermined lattice direction and then
etching, the multilayer epitaxial structure 101 can have an upper
surface with higher roughening degree and regular and even
roughening topography. Accordingly, light extraction efficiency of
the semiconductor light-emitting device is increased, thereby
enhancing the light-emitting efficiency of the semiconductor
light-emitting device.
[0029] While the invention has been described by way of example and
in terms of preferred embodiment, it is to be understood that the
invention is not limited thereto. To the contrary, it is intended
to cover various modifications and similar arrangements (as would
be apparent to those skilled in the art). Therefore, the scope of
the appended claims should be accorded the broadest interpretation
so as to encompass all such modifications and similar
arrangements.
* * * * *