U.S. patent application number 13/624046 was filed with the patent office on 2013-01-17 for resonator device including electrode with buried temperature compensating layer.
This patent application is currently assigned to Avago Technologies Wireless IP (Singapore) Pte. Ltd.. The applicant listed for this patent is Avaro Technologies Wireless IP (Singapore) Pte. Ltd.. Invention is credited to Donald LEE, Wei PANG, Richard C. RUBY, Qiang ZOU.
Application Number | 20130015747 13/624046 |
Document ID | / |
Family ID | 44147289 |
Filed Date | 2013-01-17 |
United States Patent
Application |
20130015747 |
Kind Code |
A1 |
RUBY; Richard C. ; et
al. |
January 17, 2013 |
RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE
COMPENSATING LAYER
Abstract
An acoustic resonator device includes a composite first
electrode on a substrate, a piezoelectric layer on the composite
electrode, and a second electrode on the piezoelectric layer. The
first electrode includes a buried temperature compensating layer
having a positive temperature coefficient. The piezoelectric layer
has a negative temperature coefficient, and thus the positive
temperature coefficient of the temperature compensating layer
offsets at least a portion of the negative temperature coefficient
of the piezoelectric layer.
Inventors: |
RUBY; Richard C.; (Menlo
Park, CA) ; PANG; Wei; (Fort Collins, CO) ;
ZOU; Qiang; (Fort Collins, CO) ; LEE; Donald;
(Fort Collins, CO) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Technologies Wireless IP (Singapore) Pte. Ltd.; Avaro |
Singapore |
|
SG |
|
|
Assignee: |
Avago Technologies Wireless IP
(Singapore) Pte. Ltd.
Singapore
SG
|
Family ID: |
44147289 |
Appl. No.: |
13/624046 |
Filed: |
September 21, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12769791 |
Apr 29, 2010 |
|
|
|
13624046 |
|
|
|
|
Current U.S.
Class: |
310/346 |
Current CPC
Class: |
H03H 9/175 20130101;
H03H 9/02102 20130101; H03H 3/04 20130101; H03H 9/173 20130101;
H03H 9/131 20130101 |
Class at
Publication: |
310/346 |
International
Class: |
H01L 41/04 20060101
H01L041/04 |
Claims
1. An acoustic wave resonator, comprising: (a) a substrate; (b) an
acoustic reflector formed on the substrate; (c) a bottom electrode
formed on the acoustic reflector; (d) a piezoelectric layer formed
on the bottom electrode; and (e) a composite structure formed on
the piezoelectric layer, comprising: (i) a first electrode formed
on the piezoelectric layer; (ii) a temperature compensation layer
formed on the first electrode; and (iii) a second electrode formed
on the temperature compensation layer and electrically connected to
the first electrode.
2. The acoustic wave resonator of claim I, wherein the temperature
compensation layer has a temperature coefficient of frequency that
is opposite to that of the piezoelectric layer.
3. The acoustic wave resonator of claim 1, wherein the temperature
compensation layer is formed with a material of tellurium oxide,
silicon oxide, or a combination of them.
4. The acoustic wave resonator of claim 1, wherein the temperature
compensation layer is formed to have one or more vias or trenches
such that the first electrode and the second electrode are
electrically connected to one another through the one or more vias
or trenches.
5. An acoustic wave resonator, comprising: (a) a substrate; (b) an
acoustic reflector formed on the substrate; (c) a composite
structure formed on the acoustic reflector, comprising: (i) a first
electrode formed on the acoustic reflector; (ii) a temperature
compensation layer formed on the first electrode; and (iii) a
second electrode formed on the temperature compensation layer and
electrically connected to the first electrode; (d) a piezoelectric
layer formed on the second electrode of the composite structure;
and (e) a top electrode formed on the piezoelectric layer.
6. The acoustic wave resonator of claim 5, wherein the temperature
compensation layer has a temperature coefficient of frequency that
is opposite to that of the piezoelectric layer.
7. The acoustic wave resonator of claim 5, wherein the temperature
compensation layer is formed with a material of tellurium oxide,
silicon oxide, or a combination of them.
8. The acoustic wave resonator of claim 5, wherein the temperature
compensation layer is formed to have one or more vias or trenches
such that the first electrode and the second electrode are
electrically connected to one another through the one or more vias
or trenches.
9. An acoustic wave resonator, comprising a composite structure
comprising: (a) a first electrode; (b) a temperature compensation
layer formed on the first electrode, wherein the temperature
compensation layer has one or more vias or trenches formed therein;
and (c) a second electrode formed on the temperature compensation
layer and electrically connected to the first electrode at least
through the one or more vias or trenches of the temperature
compensation layer.
10. The acoustic wave resonator of claim 1, further comprising: (a)
an acoustic reflector formed on a substrate; (b) a bottom electrode
formed on the acoustic reflector; and (c) a piezoelectric layer
formed on the bottom electrode, wherein t le composite structure is
disposed on the piezoelectric layer.
11. The acoustic wave resonator of claim 1, further comprising: (a)
an acoustic reflector formed on a substrate; (b) a piezoelectric
layer formed on the composite structure that in turn, is disposed
on the acoustic reflector; and (c) a top electrode formed on the
piezoelectric layer.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation application under
37 C.F.R. .sctn.1.53(b) of commonly owned U.S. patent application
Ser. No. 12/769,791 to Richard C. Ruby, et al. and entitled
"RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE
COMPENSATING LAYER", and filed on Apr. 29, 2010 Applicants claim
priority under 35 U.S.C. .sctn.120 from U.S. patent application
Ser.. No. 12/769,791, and the entire disclosure of U.S. patent
application Ser. No. 12/769,791 is specifically incorporated herein
by reference.
BACKGROUND
[0002] Electrical resonators are widely incorporated in modern
electronic devices. For example, in wireless communications
devices, radio frequency (RE) and microwave frequency resonators
are used as filters, such as ladder filters having electrically
connected series and shunt resonators formed in a ladder structure.
The filters may he included in a duplexer, for example, connected
between a single antenna and a receiver and a transmitter for
respectively filtering received and transmitted signals.
[0003] Various types of filters use mechanical resonators, such as
bulk acoustic wave (BAW), surface acoustic wave (SAW), and solidly
mounted resonator (SMR)-BAW resonators. The resonators generally
convert electrical signals to mechanical signals or vibrations,
and/or mechanical signals or vibrations to electrical signals. A
BAW resonator, for example, is an acoustic stack that generally
includes a layer of piezoelectric material between two electrodes.
Acoustic waves achieve resonance across the acoustic stack, with
the resonant frequency of the waves being determined by the
materials in the acoustic stack and the thickness of each layer
(e.g., piezoelectric layer and electrode layers). One type of BAW
resonator includes a piezoelectric film as the piezoelectric
material, which may be referred to as a film bulk acoustic
resonator (FBAR). FBARs resonate at GHz frequencies, and are thus
relatively compact, having thicknesses on the order of microns and
length and width dimensions of hundreds of microns.
[0004] Resonators may be used as band-pass filters with associated
passbands providing ranges of frequencies permitted to pass through
the filters. The passbands of the resonator filters tend to shift
in response to environmental and operational factors, such as
changes in temperature and/or incident power. For example, the
passband of a resonator filter moves lower in frequency in response
to rising temperature and higher incident power.
[0005] Cellular phones, in particular, are negatively affected by
shifts in passband due to fluctuations in temperature and power.
For example, a cellular phone includes power amplifiers (PAs) that
must be able to deal with larger than expected insertion losses at
the edges of the filter (duplexer). As the filter passband shifts
down in frequency, e.g., due to rising temperature, the point of
maximum absorption of power in the filter, which is designed to be
above the passband, moves down into the frequency range of the FCC
or government designated passband. At this point, the filter begins
to absorb more power from the PA and heats up, causing the
temperature to increase further. Thus, the filter passband shifts
down in frequency more, bringing the maximum filter absorbing point
even closer. This sets up a potential runaway situation, which is
avoided only by the fact that the reflected power becomes large and
the filter eventually settles at some high temperature.
[0006] PAs are designed specifically to handle the worst case power
handling of the filter at the corner of the pass band. Currents of
a typical PA can run from a few mA at the center of the filter
passband to about 380 mA-450 mA at the edges. This is a huge power
draw on the PA, as well as the battery that drives the cellular
phone. This is one reason that a cellular phone operating more in
the transmit mode (i.e., talk time) than in the receive mode (i.e.,
listening time) drains battery power more quickly.
[0007] In order to prevent or reduce rising temperatures, a
conventional filter may include a layer of oxide material within
the piezoelectric layer of the acoustic stack. The oxide material
has a positive temperature coefficient, which at least partially
offsets the negative temperature coefficients of the metal
electrodes and the piezoelectric material, respectively. For
example, the oxide material may be placed in the center of the
piezoelectric layer or at either end of the piezoelectric layer
between the electrodes. However, that the acoustic coupling
coefficient (kt.sup.2) of the resonator is greatly compromised by
the addition of oxide material to the piezoelectric layer. This is
because the oxide material appears as a "dead" capacitor in series
with the active piezoelectric material dielectric. Further, the
oxide material may contaminate the piezoelectric material. For
example, when the piezoelectric material is aluminum nitride (AlN),
the oxide material causes the AlN to become a chemical compound
that includes oxygen (e.g., AlN.sub.(x)O.sub.(y)), which is a
non-piezoelectric material, thus further degrading the acoustic
coupling coefficient.
SUMMARY
[0008] In accordance with a representative embodiment, an acoustic
wave resonator comprises: (a) a substrate; (b) an acoustic
reflector formed on the substrate; (c) a bottom electrode formed on
the acoustic reflector; (d) a piezoelectric layer formed on the
bottom electrode; and (e) a composite structure formed on the
piezoelectric layer, comprising: (i) a first electrode formed on
the piezoelectric layer; (ii) a temperature compensation layer
formed on the first electrode; and (iii) a second electrode formed
on the temperature compensation layer and electrically connected to
the first electrode.
[0009] In accordance with another representative embodiment, an
acoustic wave resonator, comprising a composite structure
comprises: (a) a first electrode; (h) a temperature compensation
layer formed on the first electrode. The temperature compensation
layer has one or more vias or trenches formed therein. The acoustic
wave resonator also comprises (c) a second electrode formed on the
temperature compensation layer and electrically connected to the
first electrode at least throe the one or more vias or trenches of
the temperature compensation layer.
[0010] In another representative embodiment, an acoustic wave
resonator comprises: (a) a substrate; (b) an acoustic reflector
formed on the substrate; (c) a composite structure formed on the
acoustic reflector, comprising: (i) a first electrode formed on the
acoustic reflector; (ii) a temperature compensation layer formed on
the first electrode; and (iii) a second electrode formed on the
temperature compensation layer and electrically connected to the
first electrode; (d) a piezoelectric layer formed on the second
electrode of the composite structure; and (e) a top electrode
formed on the piezoelectric layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The example embodiments are best understood from the
following detailed description when read with the accompanying
drawing figures. It is emphasized that the various features are not
necessarily drawn to scale. In fact, the dimensions may be
arbitrarily increased or decreased for clarity of discussion.
Wherever applicable and practical, like reference numerals refer to
like elements.
[0012] FIG. 1 is a cross-sectional diagram illustrating an acoustic
resonator device, including an electrode with a buried temperature
compensating layer, according to a representative embodiment.
[0013] FIG. 2 is a cross-sectional diagram illustrating an acoustic
resonator device, including an electrode with a buried temperature
compensating layer, according to a representative embodiment.
[0014] FIG. 3 is a flow diagram illustrating a method of
fabricating an acoustic resonator device, according to a
representative embodiment.
[0015] FIG. 4 is a cross-sectional diagram illustrating an acoustic
resonator device, including an electrode with a buried temperature
compensating layer, according to a representative embodiment.
DETAILED DESCRIPTION
[0016] In the following detailed description, for purposes of
explanation and not limitation, representative embodiments
disclosing specific details are set forth in order to provide a
thorough understanding of the present teachings. However, it will
be apparent to one having ordinary skill in the art having had the
benefit of the present disclosure that other embodiments according
to the present teachings that depart from the specific details
disclosed herein remain within the scope of the appended claims.
Moreover, descriptions of well-known apparatuses and methods may be
omitted so as to not obscure the description of the representative
embodiments. Such methods and apparatuses are clearly within the
scope of the present teachings.
[0017] Generally, it is understood that the drawings and the
various elements depicted therein are not drawn to scale. Further,
relative terms, such as "above," "below," "top," "bottom," "upper,"
"tower," "left," "right," "vertical" and "horizontal," are used to
describe the various elements' relationships to one another, as
illustrated in the accompanying drawings. It is understood that
these relative terms are intended to encompass different
orientations of the device and/or elements in addition to the
orientation depicted in the drawings. For example, if the device
were inverted with respect to the view in the drawings, an element
described as "above" another element, for example, would now be
"below" that element, Likewise, if the device were rotated 90
degrees with respect to the view in the drawings, an element
described as "vertical," for example, would now be
"horizontal."
[0018] Aspects of the present teachings are relevant to components
of BAW and FBAR devices and filters, their materials and their
methods of fabrication. Various details of such devices and
corresponding methods of fabrication may be found, for example, in
one or more of the following U.S. patent publications: U.S. Pat.
No. 6,107,721, to Lakin; U.S. Pat. Nos. 5,587,620, 5,873,153,
6,507,983, 7,388,454 and 7,629,865 to Ruby et al.; U.S. Pat. No.
7,280,007 to Hongjun Feng et al.; and U.S. Patent Application Pub.
No. 2007-0205850 Jamneala et al. The disclosures of these patents
and published patent applications are hereby incorporated by
reference. It is emphasized that the components, materials and
method of fabrication described in these patents and patent
applications are representative and other methods of fabrication
and materials within the purview of one of ordinary skill in the
art are contemplated.
[0019] According to various embodiments, a resonator device has an
acoustic stack with a piezoelectric layer between top and bottom
electrodes, at least one of which is a composite electrode having a
temperature compensating layer deposited between an electrode layer
and a conductive interposer layer. The temperature compensating
layer may he formed of an oxide material, such as boron silicate
glass (BSG), for example, having a positive temperature coefficient
which offsets at least a portion of the negative temperature
coefficients of the piezoelectric layer and the conductive material
in the top and bottom electrodes. The conductive interposer layer
thus makes a DC electrical connection with the electrode layer in
the composite electrode, effectively shorting out a capacitive
component of the temperature compensating layer and increasing a
coupling coefficient kt.sup.2 of the resonator device. Also, the
conductive interposer, which is positioned between the temperature
compensating layer the piezoelectric layer, presents a barrier
preventing oxygen in the oxide layer from diffusing into the
piezoelectric material of the piezoelectric layer. In various
embodiments, the composite electrode may be the bottom electrode,
the top electrode, or both, in the acoustic stack.
[0020] FIG. 1 is a cross-sectional view of an acoustic resonator
device, which includes an electrode having a buried temperature
compensating layer, according to a representative embodiment.
[0021] Referring to FIG. 1, illustrative resonator device 100
includes acoustic stack 105 formed on substrate 110. The substrate
110 may be formed of various types of semiconductor materials
compatible with semiconductor processes, such as silicon (Si),
gallium arsenide (GaAs), indium phosphide (InP), or the like, which
is useful for integrating connections and electronics, thus
reducing size and cost. In the depicted embodiment, the substrate
110 includes a cavity 115 formed beneath the acoustic stack 105 to
provide acoustic isolation, such that the acoustic stack 105 is
suspended over an air space to enable mechanical movement. In
alternative embodiments, the substrate 110 may be formed with no
cavity 115, for example, using SMR technology. For example, the
acoustic stack 105 may be formed over an acoustic mirror or a Bragg
Reflector (not shown), having alternating layers of high and low
acoustic impedance materials, formed in the substrate 110. An
acoustic reflector may be fabricated according to various
techniques, an example of which is described in U.S. Pat. No.
7,358,831 to Larson, III, et al., which is hereby incorporated by
reference.
[0022] The acoustic stack 105 includes piezoelectric layer 130
formed between composite first electrode 120 and second electrode
140. The composite first electrode 120 includes multiple layers,
and is referred to herein as a composite electrode. In various
embodiments, the composite first electrode 120 includes a base
electrode layer 122, a buried temperature compensating layer, e.g.,
oxide layer 124 and a conductive interposer layer 126 stacked
sequentially on the substrate 110. The electrode layer 122 and the
conductive interposer layer 126 are formed of electrically
conductive materials, such as various metals compatible with
semiconductor processes, including tungsten (W), molybdenum (Mo),
aluminum (Al), platinum (Pt), ruthenium (Ru), niobium (Nb), or
hafnium (Hf), for example.
[0023] In various embodiments, the electrode layer 122 and the
conductive interposer layer 126 are formed of different conductive
materials, where the electrode layer 122 is formed of a material
having relatively lower conductivity and relatively higher acoustic
impedance, and the conductive interposer layer 126 is formed of a
material having relatively higher conductivity and relatively lower
acoustic impedance. For example, the electrode layer 122 may be
formed of W and the conductive interposer layer 126 may be formed
of Mo, although other materials and/or combinations of materials
may be used without departing from the scope of the present
teachings. Further, in various embodiments, the electrode layer 122
and the conductive interposer layer 126 may be formed of the same
conductive material, without departing from the scope of the
present teachings.
[0024] The oxide layer 124 is a temperature compensating layer, and
is formed between the electrode layer 122 and the conductive
interposer layer 126. The oxide layer 124 is therefore separated or
isolated from the piezoelectric layer 130 by the conductive
interposer layer 126, and is otherwise sealed in by the connection
between the conductive interposer layer 126 and the electrode layer
122. Accordingly, the oxide layer 124 is effectively buried within
the composite first electrode 120, The oxide layer 124 may be
formed of various materials compatible with semiconductor
processes, including boron silicate glass (BSG), silicon dioxide
(SiO.sub.2), chromium (Cr) or tellurium oxide (TeO.sub.(x)), for
example, which have positive temperature coefficients. The positive
temperature coefficient of the oxide layer 124 offsets negative
temperature coefficients of other materials in the acoustic stack
105, including the piezoelectric layer 130, the second electrode
140, and the electrode layer 122 and the conductive interposer
layer 126 of the composite first electrode 120.
[0025] As shown in the embodiment of FIG. 1, the oxide layer 124
does not extend the full width of the acoustic stack 105. Thus, the
conductive interposer layer 126, which is formed on the top and
side surfaces of the oxide layer 124, contacts the top surface of
the electrode layer 122, as indicated for example by reference
number 129. Therefore, a DC electrical connection is formed between
the conductive interposer layer 126 and the electrode layer 122, By
DC electrically connecting with the electrode layer 122, the
conductive interposer layer 126 effectively "shorts" out a
capacitive component of the oxide layer 124, thus increasing a
coupling coefficient (kt.sup.2) of the resonator device 100. In
addition, the conductive interposer layer 126 provides a barrier
that prevents oxygen in the oxide layer 124 from diffusing into the
piezoelectric layer 130, preventing contamination of the
piezoelectric layer 130,
[0026] Also, in the depicted embodiment, the oxide layer 124 has
tapered edges 124a, which enhance the DC electrical connection
between the conductive interposer layer 126 and the electrode layer
122. In addition, the tapered edges 124a enhance the mechanical
connection between the conductive interposer layer 126 and the
electrode layer 122, which improves the sealing quality, e.g., for
preventing Oxygen M the oxide layer 124 from diffusing into the
piezoelectric layer 130. In alternative embodiments, the edges of
the oxide layer 124 are not tapered, but may be substantially
perpendicular to the top and bottom surfaces of the oxide layer
124, for example, without departing from the scope of the present
teachings.
[0027] The piezoelectric layer 130 is formed on the top surface of
the conductive interposer layer 126. The piezoelectric layer 130
may be formed of a thin film piezoelectric compatible with
semiconductor processes, such as aluminum nitride (AlN), zinc oxide
(ZnO), lead zirconium titanate (PZT), or the like. The thickness of
the piezoelectric layer 130 may range from about 1000 .ANG. to
about 100,000 .ANG., for example, although the thickness may vary
to provide unique benefits for any particular situation or to meet
application specific design requirements of various
implementations, as would be apparent to one of ordinary skill in
the art. In an embodiment, the piezoelectric layer 130 may be
formed on a seed layer (not shown) disposed over an upper surface
the composite first electrode 120. For example, the seed layer may
be formed of Al to foster growth of an AlN piezoelectric layer 130.
The seed layer may have a thickness in the range of about 50 .ANG.
to about 5000 .ANG., for example.
[0028] The second electrode 140 is formed on the top surface of the
piezoelectric layer 130. The second electrode 140 is formed of an
electrically conductive material compatible with semiconductor
processes, such as Mo, Ru, Nb, Elf, or the like. In an embodiment,
the second electrode 140 is formed of the same material as the
electrode layer 122 of the composite first electrode 120. However,
in various embodiments, the second electrode 140 may be formed of
the same material as only the conductive interposer layer 126; the
second electrode 140, the conductive interposer layer 126 and the
electrode layer 122 may all be formed of the same material; or the
second electrode 140 may be formed of a different material than
both the conductive interposer layer 126 and the electrode layer
122, without departing from the scope of the present teachings.
[0029] The second electrode 140 may further include a passivation
layer (not shown), which may be formed of various types of
materials, including AlN, silicon carbide (SiC), BSG, SiO.sub.2,
SiN, polysilicon, and the like. The thickness of the passivation
layer must be sufficient to insulate all layers of the acoustic
stack 105 from the environment, including protection from moisture,
corrosives, contaminants, debris and the like. The first and second
electrodes 120 and 140 are electrically connected to external
circuitry via contact pads (not shown), which may be formed of a
conductive material, such as gold, gold-tin alloy or the like.
[0030] In an embodiment, an overall first thickness T.sub.120 of
the composite first electrode 120 is substantially the same as an
overall second thickness T.sub.140 of the second electrode 140, as
shown in FIG. 1. For example, the thickness of each of the first
and second electrodes 120 and 140 may range from about 600 .ANG. to
about 30000 .ANG., although the thicknesses may vary to provide
unique benefits for any particular situation or to meet application
specific design requirements of various implementations, as would
be apparent to one of ordinary skill in the art.
[0031] The multiple layers of the composite first electrode 120
have corresponding thicknesses. For example, the thickness of
electrode layer 122 may range from about 400 .ANG. to about 29,900
.ANG., the thickness of oxide layer 124 may range from about 100
.ANG. to about 5000 .ANG., and the thickness of conductive
interposer layer 126 may range from about 100 .ANG. to about 10000
.ANG.. Each of the layers of the composite first electrode 120 may
be varied to produce different. Characteristics with respect to
temperature coefficients and coupling coefficients, while the
overall first thickness T.sub.120 of the composite first electrode
120 remains substantially the same as the overall second thickness
T.sub.140 of the second electrode 140. For example, the thickness
of the oxide layer 124 may be varied to affect the overall
temperature coefficient of the acoustic stack 105, and the relative
thicknesses of the electrode layer 122 and the conductive
interposer layer 126 may be varied to affect the overall coupling
coefficient of the resonator device 100.
[0032] For example, FIG. 2 depicts a cross-sectional view of an
acoustic resonator device, according to another representative
embodiment, in which thicknesses of electrode and conductive
interposer layers are varied, thus "sinking" a buried temperature
compensating layer deeper into a composite first electrode (and
further away from the active piezoelectric layer 130).
[0033] More particularly, illustrative resonator device 200 of FIG.
2 includes acoustic stack 205 formed on substrate 110. The acoustic
stack 205 includes piezoelectric layer 130 formed between a
composite first electrode 220 and a second electrode 140. Like
reference numerals in FIGS. 1 and 2 refer to like elements, and
therefore corresponding descriptions of like elements will not be
repeated.
[0034] The composite first electrode 220 includes electrode layer
222, buried oxide layer 224 and conductive interposer layer 226
stacked sequentially on the substrate 110, e.g., over the cavity
115. As discussed above with respect to the electrode layer 122 and
the conductive interposer layer 126, the electrode layer 222 and
the conductive interposer layer 226 are formed of the same or
different electrically conductive materials, such as Mo, W, Al, Pt,
Ru, Nb or Hf, for example.
[0035] The buried oxide layer 224 is a temperature compensating
layer formed between the electrode layer 222 and the conductive
interposer layer 226, such that the buried oxide layer 224 is
separated from the piezoelectric layer 130 by the conductive
interposer layer 226. Accordingly, the buried oxide layer 224 is
effectively buried within the composite first electrode 220. As
discussed above with respect to the oxide layer 124, the buried
oxide layer 224 may be formed of various materials compatible with
semiconductor processes, including BSG, SiO.sub.2, Cr or
TeO.sub.(x), for example, which have positive temperature
coefficients, for offsetting negative temperature coefficients of
other materials in the acoustic stack 205.
[0036] As discussed above with reference to FIG. 1, the overall
thickness of the composite first electrode 220 is substantially the
same as the overall thickness of the second electrode 140, as
indicated by first thickness T.sub.220 and second thickness
T.sub.140. However, the thickness T.sub.226 of the conductive
interposer layer 226 in FIG. 2 is greater than the thickness
T.sub.126 of the conductive interposer layer 126 in FIG. 1, such
that the buried oxide layer 224 has been buried more deeply, i.e.,
further "sinking," within the composite first electrode 220 than
within the composite first electrode 120. To compensate for the
greater thickness T.sub.226 of the conductive interposer layer 226,
the thickness of the electrode layer 222 in FIG. 2 is less than the
thickness T.sub.122 of the electrode layer 122 in FIG. 1, so that
the overall first thickness T.sub.220 of the composite first
electrode 220 remains the same as the overall second thickness
T.sub.140 of the second electrode 140.
[0037] The thickness of the oxide layer can also be targeted to be
thicker (as it is more deeply buried) to help maintain, or
minimize, the linear temperature coefficient. In the depicted
example, the thickness of the buried oxide layer 224 is the same as
the thickness of the oxide layer 124. However, due to the deeper
position within the composite first electrode 220, the buried oxide
layer 224 causes the coupling coefficient of the resonator device
200 to be relatively greater than the coupling coefficient of the
resonator device 100 (at the expense of worsening temperature
coefficient). In other words, by adjusting the depth of the oxide
layer 124, 224, the coupling coefficient of the resonator device
100, 200 may be optimized. Some of the degradation of the
temperature coefficient can be "won back" by thickening the oxide
layer 124, 224. Typically, there is an optimum between final
temperature coefficient and coupling coefficient (kt.sup.2),
depending on application.
[0038] Generally, the thickness and the location of the oxide layer
124, 224 inside the first and second electrode 120, 220 should be
optimized, in order to maximize the coupling coefficient for an
allowable linear temperature coefficient. This optimization may be
accomplished, for example, by modeling an equivalent circuit of the
acoustic stack 105, 205 using a Mason model and adjusting the oxide
layer 124, 224 by adding more material to the conductive interposer
layer 126 and removing material from the electrode layer 122, so
the thickness of the composite first electrode 120, 220 remains
constant, as would be apparent to one of ordinary skill in the art.
Although there is some degradation in the offsetting effects of the
temperature coefficient by sinking the oxide layer 124, 224, the
coupling coefficient of the resonator device 100, 200 may be
improved. An algorithm may be developed to optimize the depth of
the oxide layer 124, 224 in the composite first electrode 120, 220
in light of the trade-off between the temperature coefficient and
the coupling coefficient, for example, using a multivariate
optimization technique, such as a Simplex method, as would be
apparent to one of ordinary skill in the art. In addition, the
depth of the oxide layer 124, 224, may be limited by various
constraints, such as minimum necessary coupling coefficient and
maximum allowable temperature coefficient. Likewise, the thickness
of the oxide layer 124, 224 may adjusted to provide the optimal
coupling coefficient and a minimum overall temperature coefficient
of the resonator device 100, 200.
[0039] Referring again to FIG. 1, in an illustrative configuration
of the acoustic stack 105, the oxide layer 124 is formed at a
thickness of about 1000 .ANG. using a thin film of BSG (e.g., about
two percent by weight boron), which provides a large positive
temperature coefficient (e.g., up to about 350 ppm per deg C). Each
of the first thickness T.sub.120 of the composite first electrode
120 and the second thickness T.sub.140 of the second electrode 140
(including a passivation layer) is about 3000 .ANG.. Also, the
electrode layer 122 of the composite first electrode 120 and the
second electrode 140 are each formed of Mo. The conductive
interposer layer 126 is also made of molybdenum, and in this
example would be between about 300 .ANG. and about 600 .ANG.. The
piezoelectric layer 130 is formed at a thickness of about 11,000
.ANG. using a thin film of AlN. The acoustic stack 105 with this
illustrative configuration has a zero linear temperature
coefficient value. Only a residual quadratic term is left (where
beta is about -22 ppB per degree C.sup.2). However, the maximum
coupling coefficient for the resonator device 100 of this
configuration is only about four percent. In comparison, when the
BSG layer is formed outside of the acoustic stack 105 (as in some
conventional resonators), the temperature coefficient has a linear
term on the order of about -24 ppm per degree C. and a coupling
coefficient that should be on the order of 6.5 percent.
[0040] According to various embodiments, the resonator device may
be fabricated using various techniques compatible with
semiconductor processes. A non-limiting example of a fabrication
process directed to representative resonator device 100 is
discussed below with reference to FIG. 3.
[0041] FIG. 3 is a flow diagram illustrating a method of
fabricating a resonator device, according to a representative
embodiment.
[0042] Referring to FIGS. 1 and 3, substrate 110 is provided in
block S311 and the electrode layer 122 is applied to a top surface
of the substrate 110 in block S312. In an embodiment, the substrate
110 is formed of Si and the electrode layer 122 is formed of W, for
example, although different materials may be used, as discussed
above, without departing from the scope of the present teachings.
The electrode layer 122 may be applied using spin-on, sputtering,
evaporation or chemical vapor disposition (CVD) techniques, for
example, although other application methods may be
incorporated.
[0043] Notably, formation of the cavity 115 in the substrate 110
may be carried out before fabrication of the acoustic stack 105,
wherein the cavity 115 is initially filled with a sacrificial
material (not shown), such as phosposilicate glass (PSG) or other
release processes, such as polysilicon and xenon difluoride
etchant, as would be apparent to one of ordinary skill in the art,
during fabrication of layers of the acoustic stack 105. The release
of the sacrificial material to form the cavity 115 is carried out
using a suitable etchant, such as HF, after fabrication of the
layers of the acoustic stack 105 (e.g., after formation of the
second electrode 140). In alternative configurations, the cavity
115 may pass through the substrate 110 to form a backside opening,
which may be formed by back side etching a bottom surface of the
substrate 110. The back side etching may include a dry etch
process, such as a Bosch process, for example, although various
alternative techniques may be incorporated.
[0044] Alternatively, the substrate 110 may include an acoustic
isolator, such as an acoustic mirror or Bragg Reflectors, rather
than the cavity 115, Such acoustic isolator may be formed in the
substrate 110 using any technique compatible with semiconductor
processes before forming the acoustic stack 105, as would be
apparent to one of ordinary skill in the art.
[0045] In block S313, oxide layer 124 is formed on a top surface of
the electrode layer 122, to form a temperature compensating layer.
In an embodiment, the oxide layer 124 is formed of BSG, for
example, although different materials may be used, as discussed
above, without departing from the scope of the present teachings.
The oxide layer 124 may be applied using spin-on, sputtering,
evaporation or CVD techniques, for example, although other
application methods may be incorporated. Various illustrative
techniques for forming temperature compensating layers are
described, for example, in U.S. Pat. No. 7,561 009 to Larson, III,
et al., which is hereby incorporated by reference.
[0046] In block S314, the oxide layer 124 is etched to a desired
size and the edges 124a are tapered. For example, a photoresist
layer (not shown) may be applied to the top surface of the oxide
layer 124 and patterned to form a mask or photoresist pattern,
using any photoresist patterning technique compatible with
semiconductor processes, as would be apparent to one of ordinary
skill in the art. The photoresist pattern may be formed by
machining or by chemically etching the photoresist layer using
photolithography, although various alternative techniques may he
incorporated. Following etching of the oxide layer 124, the
photoresist pattern is removed, for example, by chemically
releasing or etching using a wet etch process including HF etch
solution, although the photoresist pattern may be removed by
various other techniques, without departing from the scope of the
present teachings.
[0047] In various embodiments, to obtain the tapered edges 124a,
oxygen is leaked into the etcher used to etch the oxide layer 124.
The oxide (and/or temperature chuck) causes the photoresist to
erode more quickly at the edges of the patterned photo resist and
to pull back slightly. This "thinning" of the resist forms a wedge
shape profile that is then imprinted into the oxide underneath as
the photoresist goes away. Generally, the wedge is created by
adjusting the etch rate of resist relative to the etched material,
as would be apparent to one of ordinary skill in the art.
Meanwhile, further from the edges of the oxide layer 124, there is
sufficient photoresist coverage throughout the etch that the
underlying oxide material is not touched. Of course, other methods
of obtaining tapered edges may be incorporated without departing
form the scope of the present teachings.
[0048] The conductive interposer layer 126 is applied to a top
surface of the oxide layer 124 in block S315. The conductive
interposer layer 126 is formed of Mo, for example, although
different materials may be used, as discussed above, without
departing from the scope of the present teachings. The conductive
interposer layer 126 may be applied using spin-on, sputtering,
evaporation or CVD techniques, for example, although other
application methods may be incorporated.
[0049] In an alternative embodiment, an interim seed layer (not
shown) is formed on the top surface of the oxide layer 124 before
the oxide layer 124 is etched. The interim seed layer may be formed
of the same piezoelectric material as the piezoelectric layer 130,
such as AlN, for example. The interim seed layer may be formed to a
thickness of about 300 .ANG., for example, and reduces or minimizes
oxide diffusion. from the oxide layer 124 into the piezoelectric
layer 130. Outer portions of the interim seed layer are removed by
etching, along with the etched portions of the oxide layer 124, to
expose portions of the top surface of the electrode layer 122, so
that the electrode layer 122 is able to make an electrical
connection between with the conductive interposer layer 126. In
other words, after etching, the interim seed layer covers only the
top surface of the oxide layer 124, so that it is positioned
between the oxide layer 124 and the conductive interposer layer
126.
[0050] In block S316, the piezoelectric layer 130 is applied to a
top surface of the conductive interposer layer 126, which is also
the top surface of the composite first electrode 120. The
piezoelectric layer 130 is formed of AlN, for example, although
different materials may be used, as discussed above, without
departing from the scope of the present teachings. The
piezoelectric layer 130 may be applied using a sputtering
technique, for example, although other application methods may be
incorporated. For example, the piezoelectric layer 130 may be grown
from a seed layer, as discussed above, according to various
techniques compatible with semiconductor processes.
[0051] The second electrode 140 is applied to a top surface of the
piezoelectric layer 130 in block S317. The is second electrode 140
formed of W, for example, although different materials may be used,
as discussed above, without departing from the scope of the present
teachings. The second electrode 140 may be applied using spin-on,
sputtering, evaporation or CVD techniques, for example, although
other application methods may be incorporated. In various
embodiments, the second. electrode 140 includes a passivation layer
formed of BSG, SiO.sub.2, SiN, polysilicon, or the like.
[0052] The resonator device 100 may then be cut or separated from a
wafer, to the extent necessary, in order to form a singulated die.
The resonator device 100 may be separated using various techniques
compatible with semiconductor fabrication processes, such as scribe
and break, for example.
[0053] FIG. 4 is a cross-sectional view of an acoustic resonator
device, which includes an electrode having a buried temperature
compensating layer, according to a representative embodiment, in
which the acoustic stack of the resonator device is reversed, such
that the second (top) electrode is a composite electrode, as
opposed to the first (bottom) electrode.
[0054] Referring to FIG. 4, illustrative resonator device 400
includes acoustic stack 405 formed on substrate 410, The substrate
410 may be formed of various types of semiconductor materials, Si,
GaAs, 110, or the like, and may include a cavity 415 or an acoustic
isolator, as discussed above with respect to substrate 110 in FIG.
1. The acoustic stack 405 includes piezoelectric layer 430 formed
between a first electrode 420 and a composite second electrode
440.
[0055] More particularly, the first electrode 420 is formed of an
electrically conductive material, such as W. Mo, Al, Pt, Ru, Nb or
Hf, for example, on the substrate 410. The piezoelectric layer 430
is formed of a piezoelectric material, such as AlN, ZnO or PZT, for
example, on the first electrode 420. The composite second electrode
440 is formed on the piezoelectric layer 430, such that a buried
oxide layer 444 is separated from the piezoelectric layer 430 by a
conductive interposer layer 446.
[0056] For example, in an embodiment, the conductive interposer
layer 446 is applied to the top, substantially planar surface of
the piezoelectric layer 430 at a desired thickness T.sub.446. As
discussed above, the thicker the conductive interposer layer 446,
the more buried the oxide layer 444 is within the composite second
electrode 440 (i.e., further removed from the piezoelectric layer
430). The buried oxide layer 444 is then applied to the top surface
of the conductive interposer layer 446 to form a temperature
compensating layer. The buried oxide layer 444 may be applied using
spin-on, sputtering, evaporation or CVD techniques, for example,
although other application methods may be incorporated. Also, the
buried oxide layer 444 is etched to a desired size and the edges
444a may be tapered, as discussed above with respect to the oxide
layer 124.
[0057] The electrode layer 442 is formed over the buried oxide
layer 444 and the conductive interposer layer 446. The electrode
layer 442 has a thickness T.sub.442 (at outer portions, not over
the buried oxide layer 444), which may include a passivation layer
(not shown), as discussed above. The thickness T.sub.442 may vary
such that an overall second thickness T.sub.440 of the composite
second electrode 440 is substantially the same as an overall first
thickness T.sub.420 of the first electrode 420.
[0058] As discussed above, the conductive interposer layer 446 and
the electrode layer 442 are formed of electrically conductive
materials, such W, Mo, Al, Pt, Ru, Nb or Hf, for example. Also, the
conductive interposer layer 446 and the electrode layer 422 may be
formed of the same or different materials, to provide various
benefits or to meet application specific design requirements of
various implementations, as would be apparent to one of ordinary
skill in the art. In an embodiment, the electrode layer 442 is
formed of the same material as the first electrode 420, although
the electrode layer 442 and the first electrode 420 may be formed
of different materials from one another in alternative
embodiments.
[0059] The buried oxide layer 444 is a temperature compensating
layer, formed between the conductive interposer layer 446 and the
electrode layer 442, in substantially the same manner discussed
above with respect to oxide layer 124. The buried oxide layer 444
may be formed of various materials compatible with semiconductor
processes, including BSG, SiO.sub.2, SiN, or polysilicon, for
example, which have positive temperature coefficients. Because the
buried oxide layer 444 does not extend the full width of the
acoustic stack 405, the conductive interposer layer 446 forms a DC
electrical connection with the electrode layer 442, which
effectively "shorts" out a capacitive component of the buried oxide
layer 444 and increases a coupling coefficient (kt.sup.2) of the
resonator stack 400, as discussed above. In addition, the
conductive interposer layer 446 provides a barrier that prevents
oxygen in the buried oxide layer 444 from diffusing into the
piezoelectric layer 430.
[0060] In various additional embodiments, the acoustic stack of the
resonator device may include composite electrodes formed on both
the top and bottom surfaces of the piezoelectric layer, without
departing from the scope of the present teachings.
[0061] According to various embodiments, an acoustic stack of a
resonator device has at least one composite electrode that includes
a buried temperature compensating layer separated from a
piezoelectric layer by a conductive interposer layer. The
temperature compensating layer has a temperature coefficient that
has an opposite sign from a temperature coefficient of at least one
other element in the acoustic stack, thus offsetting the effects of
that temperature coefficient. Further, the conductive interposer
layer effectively shorts out a capacitive component of the
temperature compensating layer, which effectively increases a
coupling coefficient of the resonator device. Accordingly, this
enables more stable operation of the resonator, for example, by
preventing shifts in passband due to increases in temperature,
while preventing contamination of the piezoelectric material by the
material in the temperature compensating layer.
[0062] The various components, materials, structures and parameters
are included by way of illustration and example only and not in any
limiting sense. In view of this disclosure, those skilled in the
art can implement the present teachings in determining their own
applications and needed components, materials, structures and
equipment to implement these applications, while remaining within
the scope of the appended claims.
* * * * *