U.S. patent application number 13/585119 was filed with the patent office on 2012-12-06 for semiconductor memory device.
Invention is credited to Ingyu Baek, Minyoung Park, Hyun Jun Sim, Hong Sik Yoon, Jinshi Zhao.
Application Number | 20120306004 13/585119 |
Document ID | / |
Family ID | 43067809 |
Filed Date | 2012-12-06 |
United States Patent
Application |
20120306004 |
Kind Code |
A1 |
Yoon; Hong Sik ; et
al. |
December 6, 2012 |
SEMICONDUCTOR MEMORY DEVICE
Abstract
Provided is a semiconductor memory device. The semiconductor
memory device may include a local bitline extending in a direction
substantially vertical to an upper surface of a semiconductor
substrate and a local wordline intersecting the local bitline. The
local bitline is electrically connected to a bitline channel pillar
penetrating a gate of a bitline transistor, and the local wordline
is electrically connected to a wordline channel pillar penetrating
a gate of a wordline transistor.
Inventors: |
Yoon; Hong Sik;
(Seongnam-si, KR) ; Zhao; Jinshi; (Seoul, KR)
; Baek; Ingyu; (Seoul, KR) ; Sim; Hyun Jun;
(Hwaseong-si, KR) ; Park; Minyoung; (Suwon-si,
KR) |
Family ID: |
43067809 |
Appl. No.: |
13/585119 |
Filed: |
August 14, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12777683 |
May 11, 2010 |
8264018 |
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13585119 |
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Current U.S.
Class: |
257/329 ;
257/E27.06; 257/E29.262 |
Current CPC
Class: |
H01L 27/228 20130101;
H01L 27/0207 20130101; H01L 27/2454 20130101; H01L 27/249
20130101 |
Class at
Publication: |
257/329 ;
257/E29.262; 257/E27.06 |
International
Class: |
H01L 29/78 20060101
H01L029/78 |
Foreign Application Data
Date |
Code |
Application Number |
May 15, 2009 |
KR |
10-2009-0042695 |
Claims
1. A semiconductor memory device comprising: a gate of a first
wordline transistor disposed in a first region of a semiconductor
substrate; a gate of a bitline transistor disposed in a second
region of the semiconductor substrate; at least one first wordline
channel pillar penetrating the gate of the first wordline
transistor and insulated from the gate of the first wordline
transistor; at least one bitline channel pillar penetrating the
gate of the bitline transistor and insulated from the gate of the
bitline transistor; a local bitline extending in a first direction
substantially vertical to an upper surface of the semiconductor
substrate and electrically connected to the bitline channel pillar;
a first local wordline disposed at one side of the local bitline,
extending in a second direction substantially perpendicular to the
first direction so as to intersect the local bitline, and
electrically connected to the first wordline channel pillar; and a
first memory cell formed at an intersection between the local
bitline and the first local wordline.
2. The semiconductor memory device of claim 1, wherein the gate of
the bitline transistor is coupled to the gate of the first wordline
transistor, such that the gate of the bitline transistor and the
gate of the first wordline transistor are controlled by a single
block selection signal.
3. The semiconductor memory device of claim 1, further comprising:
a gate of a bias transistor disposed in the first region; at least
one bias channel pillar penetrating the gate of the bias transistor
and insulated from the gate of the bias transistor; and a bias line
coupled to the bias channel pillar.
4. The semiconductor memory device of claim 3, wherein the gate of
the bias transistor is coupled to the gate of the first wordline
transistor, and the gate of the bitline transistor is electrically
connected to the bias channel pillar.
5. The semiconductor memory device of claim 3, wherein the bias
line is formed in a bias active portion defined in the
semiconductor substrate below the gate of the bias transistor and
the bias line is doped with dopants.
6. The semiconductor memory device of claim 1, wherein the at least
one first wordline channel pillar and/or the at least one bitline
channel pillar are substantially undoped.
7. The semiconductor memory device of claim 1, further comprising:
a gate of a second wordline transistor disposed in the first
region; at least one second wordline channel pillar penetrating the
gate of the second wordline transistor and insulated from the gate
of the second wordline transistor; a second local wordline disposed
at the other side of the local bitline in the second region,
extending in the second direction to intersect the local bitline,
and electrically connected to the second wordline channel pillar;
and a second memory cell formed at an intersection between the
local bitline and the second local wordline, wherein the gate of
the first wordline transistor is coupled to the gate of the second
wordline transistor.
8. The semiconductor memory device of claim 7, further comprising:
a first global wordline coupled to the first wordline channel
pillar; a second global wordline coupled to the second wordline
channel pillar; and a global bitline coupled to the bitline channel
pillar.
9. The semiconductor memory device of claim 8, wherein the at least
one first wordline channel pillar and/or the at least one bitline
channel pillar are doped with a first dopant different from a
second dopant in the first global wordline, the second global
wordline and/or the global bitline.
10. The semiconductor memory device of claim 8, wherein the first
global wordline is formed in a first wordline active portion
defined in the semiconductor substrate below the gate of the first
wordline transistor, the second global wordline is formed in a
second wordline active portion defined in the semiconductor
substrate below the gate of the second wordline transistor, and the
global bitline is formed in a bitline active portion defined in the
semiconductor substrate below the gate of the bitline
transistor.
11. The semiconductor memory device of claim 7, wherein the first
and second local wordlines are located at substantially the same
level.
12. The semiconductor memory device of claim 7, wherein the first
memory cell includes a first variable resistor interposed between
the first local wordline and the local bitline.
13. The semiconductor memory device of claim 12, wherein the second
memory cell includes a second variable resistor interposed between
the second local wordline and the local bitline.
14. The semiconductor memory device of claim 7, further comprising:
a gate of a block selection transistor disposed in the first region
and spaced apart from the gates of the first and second wordline
transistors; at least one block selection channel pillar
penetrating the gate of the block selection transistor and
insulated from the gate of the block selection transistor; and a
block selection signal line electrically connected to the block
selection channel pillar, wherein the block selection channel
pillar is electrically connected to the gates of the first and
second wordline transistors, which are coupled to each other.
15. The semiconductor memory device of claim 7, wherein the first
local wordline comprises a plurality of first local wordlines and
the second local wordline comprises a plurality of second local
wordlines, wherein the first local wordlines are stacked on one
side of the local bitline so as to be spaced apart from one another
in the first direction, wherein the second local wordlines are
stacked on the other side of the local bitline so as to be spaced
apart from one another in the first direction, wherein the first
wordline transistor comprises a plurality of first wordline
transistors in the first region and the second wordline transistor
comprises a plurality of second wordline transistors in the first
region, wherein the gates of the first wordline transistors and the
gates of the second wordline transistors are alternately disposed
along the second direction in the first region, wherein each of the
first local wordlines is electrically connected to the first
wordline channel pillar penetrating the gate of the first wordline
transistors, wherein each of the second local wordlines is
electrically connected to the second wordline channel pillar
penetrating the gate of the second wordline transistors, and
wherein the gates of the first wordline transistors and the gates
of the second wordline transistors are coupled to each other.
16. A semiconductor memory device comprising: a gate of a wordline
transistor disposed on a semiconductor substrate; a gate of a
bitline transistor disposed on the semiconductor substrate; at
least one wordline channel pillar penetrating the gate of the
wordline transistor and insulated from the gate of the wordline
transistor; at least one bitline channel pillar penetrating the
gate of the bitline transistor and insulated from the gate of the
bitline transistor; a local bitline extending in a first direction
and electrically connected to the bitline channel pillar; and a
local wordline disposed at one side of the local bitline, extending
in a second direction different from the first direction so as to
intersect the local bitline, and electrically connected to the
wordline channel pillar.
17. The semiconductor memory device of claim 16, wherein the local
wordline extends in the second direction substantially
perpendicular to the first direction.
18. A system comprising: a semiconductor device comprising: a gate
of a wordline transistor disposed on a semiconductor substrate; a
gate of a bitline transistor disposed on the semiconductor
substrate; at least one wordline channel pillar penetrating the
gate of the wordline transistor and insulated from the gate of the
wordline transistor; at least one bitline channel pillar
penetrating the gate of the bitline transistor and insulated from
the gate of the bitline transistor; a local bitline extending in a
first direction and electrically connected to the bitline channel
pillar; and a local wordline disposed at one side of the local
bitline, extending in a second direction different from the first
direction so as to intersect the local bitline, and electrically
connected to the wordline channel pillar; and a CPU or a controller
coupled to the semiconductor device.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 12/777,683 filed on May 11, 2010, which claims priority under
35 U.S.C. .sctn.119 of Korean Patent Application 10-2009-0042695,
filed on May 15, 2009, the entire contents of which are hereby
incorporated by reference.
BACKGROUND
[0002] The present disclosure herein relates to a semiconductor
device and, more particularly, to a semiconductor memory
device.
[0003] Generally, semiconductor memory devices may store digital
data. As electronic industries and semiconductor industries develop
to a high degree, demand for high integration of the semiconductor
memory devices has gradually increased. With the development of
electronic equipment such as laptop computers, cellular phones,
digital cameras, or MP3 players, the semiconductor memory devices
have been required to store larger amounts of data.
[0004] Semiconductor memory devices may be highly integrated by
shortening a minimum line width of fine patterns forming devices.
By two-dimensionally shortening the minimum line width of the fine
patterns, it is possible to integrate many memory cells in a
limited area. However, there is a limit to methods of shortening
the minimum line width due to various factors (for example, limit
of photolithography process). For this reason, developments have
actively been made on alternative methods to highly integrate
semiconductor memory devices.
SUMMARY
[0005] The present disclosure provides a semiconductor memory
device optimized to high integration.
[0006] The present disclosure also provides a semiconductor memory
device having a three-dimensional structure optimized for high
integration.
[0007] The present disclosure also provides a semiconductor memory
device that is optimized for high integration and being effectively
driven
[0008] Embodiments of the inventive concept provide a semiconductor
memory device including: a gate of a first wordline transistor
disposed in a first region of a semiconductor substrate; a gate of
a bitline transistor disposed in a second region of the
semiconductor substrate; at least one first wordline channel pillar
penetrating the gate of the first wordline transistor and insulated
from the gate of the first wordline transistor; at least one
bitline channel pillar penetrating the gate of the bitline
transistor and insulated from the gate of the bitline transistor; a
local bitline extending in a first direction substantially vertical
to an upper surface of the semiconductor substrate and electrically
connected to an upper surface of the bitline channel pillar; a
first local wordline disposed at one side of the local bitline,
extending in a second direction substantially perpendicular to the
first direction so as to intersect the local bitline, and
electrically connected to an upper surface of the first wordline
channel pillar; and a first memory cell formed at an intersection
between the local bitline and the first local wordline.
[0009] In some embodiments, the gate of the bitline transistor may
be coupled to the gate of the first wordline transistor, such that
the gate of the bitline transistor and the gate of the first
wordline transistor may be controlled by one block selection
signal.
[0010] In other embodiments, the semiconductor memory device may
further include: a gate of a bias transistor disposed in the first
region; at least one bias channel pillar penetrating the gate of
the bias transistor and insulated from the gate of the bias
transistor; and a bias line coupled to a lower surface of the bias
channel pillar. In this case, the gate of the bias transistor may
be coupled to the gate of the first wordline transistor, and the
gate of the bitline transistor may be electrically connected to an
upper surface of the bias channel pillar.
[0011] In still other embodiments, the bias line may be formed in a
bias active portion defined in the semiconductor substrate below
the gate of the bias transistor and the bias line may be doped with
dopants.
[0012] In even other embodiments, the semiconductor memory device
may further include: a gate of a second wordline transistor
disposed in the first region; at least one second wordline channel
pillar penetrating the gate of the second wordline transistor and
insulated from the gate of the second wordline transistor; a second
local wordline disposed at the other side of the local bitline in
the second region, extending in the second direction to intersect
the local bitline, and electrically connected to an upper surface
of the second wordline channel pillar; and a second memory cell
formed at an intersection between the local bitline and the second
local wordline. In this case, the gate of the first wordline
transistor may be coupled to the gate of the second wordline
transistor.
[0013] In yet other embodiments, the semiconductor memory device
may further include: a first global wordline coupled to a lower
surface of the first wordline channel pillar; a second global
wordline coupled to a lower surface of the second wordline channel
pillar; and a global bitline coupled to a lower surface of the
bitline channel pillar.
[0014] In further embodiments, the first global wordline may be
formed in a first wordline active portion defined in the
semiconductor substrate below the gate of the first wordline
transistor. The second global wordline may be formed in a second
wordline active portion defined in the semiconductor substrate
below the gate of the second wordline transistor. The global
bitline may be formed in a bitline active portion defined in the
semiconductor substrate below the gate of the bitline
transistor.
[0015] In still further embodiments, the first memory cell may
include a first variable resistor interposed between the first
local wordline and the local bitline, and the second memory cell
may include a second variable resistor interposed between the
second local wordline and the local bitline.
[0016] In even further embodiments, the semiconductor memory device
may further include: a gate of a block selection transistor
disposed in the first region and spaced apart from the gates of the
first and second wordline transistors; at least one block selection
channel pillar penetrating the gate of the block selection
transistor and insulated from the gate of the block selection
transistor; and a block selection signal line electrically
connected to a lower surface of the block selection channel pillar.
In this case, an upper surface of the block selection channel
pillar may be electrically connected to the gates of the first and
second wordline transistors, which are coupled to each other.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The accompanying drawings are included to provide a further
understanding of the inventive concept and are incorporated in and
constitute a part of this specification. The drawings illustrate
exemplary embodiments of the inventive concept and, together with
the description, serve to explain principles of the inventive
concept. In the drawings:
[0018] FIG. 1 is a circuit diagram illustrating a semiconductor
memory device according to an embodiment of the inventive
concept;
[0019] FIG. 2 is a plan view illustrating the semiconductor memory
device according to one embodiment of the inventive concept;
[0020] FIG. 3A is a cross-sectional view taken along line I-I' of
FIG. 2;
[0021] FIG. 3B is a cross-sectional view taken along line II-II' of
FIG. 2;
[0022] FIG. 3C is a cross-sectional view taken along line III-III'
of FIG. 2;
[0023] FIG. 3D is a cross-sectional view taken along line IV-IV' of
FIG. 2;
[0024] FIG. 4A is an enlarged plan view of a bitline transistor
illustrated in FIG. 2;
[0025] FIG. 4B is an enlarged plan view of a wordline transistor
illustrated in FIG. 2;
[0026] FIG. 5 is a plan view illustrating a modified example of a
bitline channel hole included in the semiconductor memory device
according to one embodiment of the inventive concept;
[0027] FIGS. 6A, 7A, 8A, 9A, 10A, and 11A are cross-sectional views
taken along line I-I' of FIG. 2 to describe a method of forming the
semiconductor memory device according to one embodiment of the
inventive concept, respectively;
[0028] FIGS. 6B, 7B, 8B, 9B, 10B, and 11B are cross-sectional views
taken along line III-III' of FIG. 2 to describe a method of forming
the semiconductor memory device according to one embodiment of the
inventive concept, respectively;
[0029] FIG. 12 is a block diagram of an electronic system including
the semiconductor memory device according to one embodiment of the
inventive concept;
[0030] FIG. 13 is a block diagram illustrating a memory card
including the semiconductor memory device according to one
embodiment of the inventive concept.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0031] Exemplary embodiments of the inventive concept will be
described below in more detail with reference to the accompanying
drawings. The embodiments of the inventive concept may, however, be
embodied in many different forms and should not be construed as
being limited to the embodiments set forth herein. Rather, these
embodiments are provided so that this disclosure will be thorough
and complete and will fully convey the scope of the inventive
concept to those skilled in the art. In drawings, the thickness of
layers (or films) and regions is exaggerated to effectively
describe technical details. It will be understood that when any
layers (or films) are referred to as being "on" another material
layer (or film) or substrate, it may be directly on the other
material layer or substrate, or intervening elements or layers (or
films) may be present. Throughout the specification, the same
reference numerals can be denoted to the same components.
[0032] The terminology used herein is for the purpose of describing
various embodiments only and is not intended to be limiting of
exemplary embodiments. As used herein, the singular forms "a,"
"an," and "the" are intended to include the plural forms as well,
unless the context clearly indicates otherwise. As used herein, the
term "and/or" includes any and all combinations of one or more of
the associated listed items.
[0033] FIG. 1 is a circuit diagram illustrating a semiconductor
memory device according to an embodiment of the inventive
concept.
[0034] With reference to FIG. 1, a semiconductor memory device
according to one embodiment of the inventive concept may include a
plurality of memory blocks MBLKs, a plurality of local bitline
selection parts 200, a plurality of local wordline selection parts
230, and a block selection circuit 270. Each of the local bitline
selection parts 200 corresponds to a memory block MBLK, and each of
the wordline selection parts 230 also corresponds to a memory block
MBLK. For instance, each local bitline selection part 200 and each
local wordline selection part 230 may be coupled to a corresponding
memory block MBLK. The semiconductor memory device further includes
a plurality of bias transistors 240 and a plurality of block
selection transistors 245. The local bitline selection part 200 and
the local wordline selection part 230, which may be coupled to a
corresponding memory block MBLK, may be coupled to each other by a
corresponding bias transistor 240. Each of the block selection
transistors 245 may be coupled to a corresponding wordline
selection part 230.
[0035] Each of the memory blocks MBLKs includes a plurality of
memory cells. The memory cells included in the semiconductor memory
device may be three-dimensionally arranged through the memory
blocks MBLKs. Specifically, each of the memory blocks MBLKs may
include a plurality of local bitlines LBLs extending in parallel
with each other along the z-axis direction and a plurality of first
wordlines LWL1s extending in parallel with each other along the
x-axis direction substantially perpendicular to the z-axis
direction. The z-axis direction may be substantially vertical to an
upper surface of a semiconductor substrate. The upper surface of
the semiconductor substrate may be parallel to the xy-plane. The
first wordlines LWL1s, which are provided in corresponding memory
blocks MBLKs, may be stacked in the z-axis direction. The first
wordlines LWL1s, which are provided in corresponding memory blocks
MBLKs, may be spaced apart from each other in the z-axis direction.
A first memory cell MC1 may be disposed at an intersection between
the local bitline LBL and the first local wordline. The first
memory cells MC1s may be disposed at corresponding intersections
between the local bitlines LBLs and the first local wordlines
LWL1s.
[0036] Each of the memory blocks MBLKs may further include a
plurality of second local wordlines LWL2s extending parallel to
each other along the x-axis direction. The second wordlines LWL2s
also intersect with the local bitlines LBLs. A second memory cell
MC2 may be disposed at an intersection between the second local
wordline LWL2 and the local bitline LBL. A plurality of second
memory cells MC2 may be coupled to intersections between the second
local wordlines LWL2s and the local bitlines LBLs, respectively.
The second wordlines LWL2s may be stacked in the z-axis direction.
The second wordlines LWL2s may be spaced apart from each other in
the z-axis direction.
[0037] The first local wordlines LWL1s may be disposed at a first
side of the local bitlines LBLs, and the second local wordlines
LWL2s may be disposed at a second side of the local bitlines LBLs.
That is, the local bitlines LBLs may be disposed between the first
local wordlines LWL1s and the second local wordlines LWL2s. The
first and second memory cells MC1 and MC2 disposed at one of the
local bitlines LBLs share one of the local bitlines LBLs. The
heights of the second local wordlines LWL2s may be substantially
the same to those of the first local wordlines LWL1s. In each of
the memory blocks MBLKs, the first local wordline LWL1 and the
second local wordline LWL2 having substantially the same height may
be disposed at the first side and the second side of the local
bitline LBL, respectively. The first and second local wordlines
LWL1 and LWL2 are defined as a local wordline group LWLg. In each
of the memory blocks MBLKs, the local wordline groups LWLgs may be
stacked in a direction (that is, z-axis direction) where the local
bitlines LBL extend. As described above, the first and second
memory cells MC1 and MC2 may be disposed at the intersections
between the local wordline groups LWLgs and the local bitlines LBLs
and may share the local bitline LBL. Each of the first and second
memory cells MCI and MC2 may include a variable resistor (not
illustrated in FIG. 1). The variable resistor can change into a
plurality of stable states having different resistance values from
each other. The first and second memory cells MC1 and MC2 may have
nonvolatile characteristics.
[0038] The local bitlines LBLs of each memory block MBLK may be
coupled to global bitlines GBLs, respectively. The plurality of
memory blocks MBLKs may share the global bitlines GBLs. The global
bitlines GBLs may extend in parallel with each other along the
y-axis direction. The y-axis direction may be perpendicular to the
z-axis direction and the x-axis direction. The global bitlines GBLs
may be coupled to a sense amplifier (not illustrated). The memory
blocks MBLKs may be disposed along the y-axis direction and may be
spaced apart from each other in the y-axis direction. As a result,
the memory cells MCI and MC2 may be three-dimensionally disposed in
the plurality of memory blocks MBLKs.
[0039] The local bitline selection part 200 may be disposed between
the local bitlines LBLs of the memory block MBLK and the global
wordlines GBLs. The local bitline selection part 200 includes a
plurality of bitline transistors 205. Each of the bitline
transistors 205 includes a first terminal and a second terminal.
One of the first and second terminals corresponds to a source, and
the other corresponds to a drain. Each of the first terminals may
be coupled to a corresponding local bitline LBL provided in the
memory block MBLK, and each of the second terminals may be coupled
to a corresponding global bitline GBL.
[0040] The first wordlines LWL1s provided in the memory block MBLK
may be coupled to a first global wordline GWL1, and the second
wordlines LWL2s may be coupled to a second global wordline GWL2.
The first and second global wordlines GWL1 and GWL2 may be coupled
to a wordline decoder (not illustrated). The global wordlines GWL1
and GWL2 may be parallel to the global bitlines GBLs. The global
wordlines GWL1 and GWL2 may extend in parallel with each other
along the y-axis direction. The local wordline selection part 230
may be disposed between the local wordlines LWL1 and LWL2 provided
in the memory block and the global wordlines GWL1 and GWL2. The
local wordline selection part 230 may include first wordline
transistors 235a and second wordline transistors 235b. The first
wordline transistors 235a correspond to the first local wordlines
LWL1, respectively. And the second wordline transistors 235b
correspond to the second local wordlines LWL2. The first wordline
transistor 235a includes a gate, a first terminal, and a second
terminal. One of the first and second terminals corresponds to a
source, and the other corresponds to a drain. The first terminal of
the first wordline transistor 235a may be coupled to the first
local wordline LWL1, and the second terminal may be coupled to the
first global wordline GWL1. The second wordline transistor 235b
includes a gate, a first terminal, and a second terminal. One of
the first and second terminals corresponds to a source, and the
other corresponds to a drain. The first terminal of the second
wordline transistor 235b may be coupled to the second local
wordline LWL2, and the second terminal may be coupled to the second
global wordline GWL2.
[0041] The first wordline transistors 235a and the second wordline
transistors 235b may alternately be disposed along the x-axis
direction. The first wordline transistor 235a and the adjacent
second wordline transistor 235b are defined as a wordline selection
element group. The wordline selection element group may be coupled
to the local wordline group LWLg. The number of wordline selection
element groups in the local wordline selection part 230 may be the
same as that of wordline groups LWLgs in the memory block MBLK.
[0042] The block selection circuit 270 generates a block selection
signal to select one of the plural memory blocks MBLKs according to
address information. The local bitline selection part 200 and the
local wordline selection part 230 coupled to the memory block MBLK
may be coupled to each other. As a result, it can select the local
wordline selection part 230 and the local bitline selection part
200 coupled to the memory block MBLK selected by the block
selection signal.
[0043] The local wordline selection part 230 may be coupled to the
local bitline selection part 200 by the bias transistor 240. The
bias transistor 240 includes a gate, a first terminal, and a second
terminal. One of the first and second terminals corresponds to a
source, and the other corresponds to a drain. One wordline
selection gate line 250 may be coupled to gates of the first
wordline transistors 235a and gates of the second wordline
transistors 235b, which may be provided in the local wordline
selection part 230. One bitline selection gate line 210 may be
coupled to gates of the bitline transistors 205 provided in the
local bitline selection part 200. The wordline selection gate line
250 extends to be coupled to a gate of the bias transistor 240. The
first terminal of the bias transistor 240 may be coupled to the
bitline selection gate line 210, and the second terminal may be
coupled to a bias line 242. The second terminals of the plurality
of bias transistors 240 corresponding to the plurality of memory
blocks MBLKs may be coupled to one of the bias lines 242. The bias
line 242 may extend in parallel with the global wordlines GWL1 and
GWL2.
[0044] The plurality of block selection transistors 245 may be
coupled to the plurality of local wordline selection parts 230,
respectively. Specifically, the block selection transistor 245
includes a gate, a first terminal, and a second terminal. One of
the first and second terminals corresponds to a source, and the
other corresponds to a drain. The first terminal of the block
selection transistor 245 may be coupled to the wordline selection
gate line 250, and the second terminal may be coupled to a block
selection signal line 249. At least a portion of the block
selection signal line 249 may extend in the z-axis direction. That
is, at least a portion of the block selection signal line 249 may
be parallel to the local bitline LBL. The block selection signal
line 249 may be coupled to the block selection circuit 270. The
gate of the block selection transistor 245 may be coupled to a
block selection gate line 247. The block selection gate line 247
may be parallel to the global wordlines GWL1 and GWL2.
[0045] A method of selecting one memory cell will be described for
the above described semiconductor memory device as follows. A
turn-on voltage may be applied to the block selection gate line
247, and the block selection circuit 270 provides a block selection
signal to one selected from the block selection signal lines 249.
The block selection signal may be supplied to the wordline
selection gate line 250 through the selected block selection
transistor 245. Accordingly, the wordline transistors 235a and 235b
of the selected local wordline selection part 230 are turned on.
Moreover, the bias transistor 240 coupled to the selected local
wordline selection part 230 may be turned on. Since the selected
bias transistor 240 may be turned on, a bias voltage supplied
through the bias line 242 may be supplied to the bitline selection
gate line 210 coupled to the first terminal of the selected bias
transistor 240. As a result, the bitline transistors 205 of the
selected local bitline selection part 200 are turned on.
[0046] One memory cell of one memory block MBLK may be selected by
applying an operation voltage to a global wordline selected from
the global wordlines GWL1 and GWL2 and a global bitline selected
from the global bitlines GBLs.
[0047] According to the above-described semiconductor memory
device, the memory cells MC1 and MC2 may be three-dimensionally
arranged through the memory blocks MBLKs. As a result, the
semiconductor memory device may be highly integrated. In addition,
each of the memory blocks MBLKs may include the first memory cells
MC1s and the second memory cells MC2s sharing the local bitlines
LBLs. Therefore, the semiconductor memory device may be highly
integrated.
[0048] Furthermore, the local bitline selection part 200 and the
local wordline selection part 230 coupled to the memory block MBLK
may be coupled to each other. As a result, one of the memory blocks
MBLKs may be selected by one of the block selection signals.
Consequently, the operating efficiency of the semiconductor memory
device may be improved. In addition, the memory blocks MBLKs share
the wordline decoder coupled to the global wordlines GWL1 and GWL2
and the sense amplifier coupled to the global bitlines GBLs.
Therefore, the highly-integrated semiconductor memory device may be
embodied.
[0049] According to some embodiments of the inventive concept, the
memory block MBLK may include only the first memory cells MC1s. In
this case, it can omit the second wordlines LWL2s, the second
wordline transistors 235b, and the second global wordlines
GWL2s.
[0050] Subsequently, an embodiment of the inventive concept in
which the above-described semiconductor memory device may be
embodied on a semiconductor substrate will be described as follows
with reference to the accompanying drawings.
[0051] FIG. 2 is a plan view illustrating the semiconductor memory
device according to one embodiment of the inventive concept; and
FIG. 3A is a cross-sectional view taken along line I-I' of FIG. 2;
FIG. 3B is a cross-sectional view taken along line II-II' of FIG.
2; FIG. 3C is a cross-sectional view taken along line III-III' of
FIG. 2; and FIG. 3D is a cross-sectional view taken along line
IV-IV' of FIG. 2.
[0052] With reference to FIGS. 2, 3A, 3B, 3C, and 3D, a
semiconductor substrate 100 includes a first region 50 and a second
region 60. The first region 50 may be a peripheral region for
driving the memory cells. The second region 60 may be a cell array
region where the memory cells are disposed. The first region 50 may
include a first sub-region 52 where a local wordline selection part
similar to the local wordline selection part 230 shown in FIG. 1 is
provided. Moreover, the first region 50 may further include a
second sub-region 54 and a third sub-region 56. The second
sub-region 54 may be arranged with a bias transistor similar to the
bias transistor 240 illustrated in FIG. 1, and the third sub-region
56 may be arranged with a block selection transistor similar to the
block selection transistor 245. In addition, although not
illustrated in FIG. 2, the first region 50 may further include a
block selection circuit similar to the block selection circuit 270
illustrated in FIG. 1, the sense amplifier (not illustrated), and
other sub-regions in which the wordline decoder may be disposed.
The memory blocks MBLKs and the local bitline selection parts 200
illustrated in FIG. 1 may be disposed in the second region 60.
[0053] A device isolation pattern 102 may be disposed on the
semiconductor substrate 100 to define active portions 104a, 104b,
104c, 104d, and 105. The device isolation pattern 102 may be a
trench type isolation pattern. First wordline active portions 104a,
second wordline active portions 104b, bias active portion 104c, and
the block active portion 104d are defined in the first region 50.
The first and second wordline active portions 104a and 104b may be
disposed in the first sub-region 52, the bias active portion 104c
may be disposed in the second sub-region 54, and the block
selection active portion 104d may be disposed in the third
sub-region 56. The first sub-region 52 may be disposed between the
second sub-region 54 and the third sub-region 56. In one
embodiment, the second sub-region 54 may be disposed between the
first sub-region 52 and the second region 60. Bitline active
portions 105 are defined in the second region 60. The active
portions 104a, 104b, 104c, 104d, and 105 may be portions of the
semiconductor substrate 100 surrounded by the device isolation
pattern 102. The active portions 104a, 104b, 104c, 104d, and 105
may be doped with a first-type dopant such as . . . .
[0054] The first wordline active portions 104a and the second
wordline active portions 104b may be positioned approximately
parallel with each other along the y-axis direction. The first
wordline active portions 104a and the second wordline active
portions 104b may be alternately disposed along the x-axis
direction substantially perpendicular to the y-axis direction. The
bias active portion 104c may extend in parallel with the first and
second wordline active portions 104a and 104b. A plurality of block
selection active portions 104d may be provided in the third
sub-region 56. The block selection active portions 104d may be
arranged in a column along the y-axis direction. Preferably, the
block selection active portions 104d may be spaced apart from each
other in the y-axis direction. The device isolation pattern 102 may
be disposed between the adjacent block selection active portions
104d. The bitline active portions 105 may also be arranged parallel
to each other along the y-axis direction. That is, the bitline
active portion 105 may extend parallel to the first and second
wordline active portions 104a and 104b.
[0055] The distance between the first wordline active portion 104a
and adjacent second wordline active portion 104b may be "1F" in the
x-axis direction. The symbol "F" may be defined as a minimum unit
in a design rule. The distance between the bias active portion 104c
and the first wordline active portion 104a closest thereto may also
be "1F" in the x-axis direction. The distance between the block
selection active portion 104d and the second wordline active
portion 104b closest thereto may be larger than "1F" in the x-axis
direction. For instance, the distance between the block selection
active portion 104d and the second wordline active portion 104b
closest thereto may be "4F" in the x-axis direction.
[0056] The first global wordline GWL1 may be formed in the first
wordline active portion 104a, respectively, and the second global
wordline GWL2 may be formed in the second wordline active portion
104b, respectively. The first global wordline GWL1 extends in a
longitudinal direction of the first wordline active portion 104a,
and the second global wordline GWL2 extends in a longitudinal
direction of the second wordline active portion 104b. The first and
second global wordlines GWL1 and GWL2 may be regions doped with a
dopant. The first and second global wordlines GWL1 and GWL2 may be
doped with a dopant different from the dopant used in the wordline
active portions 104a and 104b. That is, the first and second global
wordlines GWL1 and GWL2 may be doped with a second-type dopant such
as . . . . One of the first and second dopants may be an n-type
dopant, and the other may be a p-type dopant. Like the wordline
active portions 104a and 104b, the first global wordlines GWL1 and
the second global wordlines GWL2 may be alternately disposed along
the x-axis direction.
[0057] The bias line 242 may be formed in the bias active portion
104c. The bias line 242 may be a region doped with the second-type
dopant. The bias line 242 extends in a longitudinal direction of
the bias active portion 104c. The bias line 242 may be parallel to
the global wordlines GWL1 and GWL2. Multiple block selection doped
regions 106 may be formed in the block selection active portions
104d, respectively. The block selection doped regions 106 may be
doped with the second-type dopant. The block selection doped
regions 106 may be spaced apart from each other and may be
electrically insulated from each other.
[0058] Subsequently, referring to FIGS. 2, 3A, 3B, 3C, and 3D, a
first gate pattern 110a and a block selection gate pattern 110b may
be disposed on the semiconductor substrate 100 of the first region
50, and a second gate pattern 110c may be disposed on the
semiconductor substrate 100 of the second region 60. The second
gate pattern 110c, the first gate pattern 110a, and the block
selection gate pattern 110b may be formed in a single row along the
x-axis direction. The second gate pattern 110c, the first gate
pattern 110a, and the block selection gate pattern 110b may be
spaced apart from each other in the x-axis direction. The second
gate pattern 110c, the first gate pattern 110a, and the block
selection gate pattern 110b formed in a single row may be defined
as a gate group. A plurality of gate groups may be provided on the
semiconductor substrate 100. The gate groups may be disposed in
parallel with each other on the semiconductor substrate 100. The
gate groups may be spaced apart from each other in the y-axis
direction. An insulating pattern 107 may be disposed between the
gate patterns 110a, 110b, and 110c and the semiconductor substrate
100.
[0059] The first gate pattern 110a extends in the x-axis direction
to intersect the first wordline active portions 104a and the second
wordline active portions 104b. In addition, the first gate pattern
110a also intersects the bias active portion 104c. The block
selection gate pattern 110b may extend toward the device isolation
pattern 102 disposed at one side of the block selection active
portion 104d. An extension part of the block selection gate pattern
110b may be disposed between the block selection active portion
104d and the first gate pattern 110a. The second gate pattern 110c
extends in the x-axis direction to intersect the bitline active
portions 105. The second gate pattern 110c may further extend in a
portion of the second sub-region 54. The extending part of the
second gate pattern 110c in the second sub-region 54 may be
disposed on the device isolation pattern 102 arranged at the side
of the bias active portion 104c. In this case, the second gate
pattern 110c may be spaced apart from the first gate pattern
110a.
[0060] A first portion of the first gate pattern 110a disposed on
each of the first wordline active portions 104a corresponds to the
gate of the first wordline transistor 235a illustrated in FIG. 1. A
second portion of the first gate pattern 110a disposed on each of
the second wordline active portions 104b corresponds to the gate of
the second wordline transistor 235b illustrated in FIG. 1.
Moreover, a third portion of the first gate pattern 110a disposed
on the bias active portion 104c corresponds to the gate of the bias
transistor 240 illustrated in FIG. 1. That is, the first gate
pattern 110a includes gates of the first wordline transistors,
gates of the second wordline transistors, and gates of the bias
transistors. The entire first gate pattern 110a corresponds to the
wordline selection gate line 250 illustrated in FIG. 1. The block
selection gate pattern 110b corresponds to the gate of the block
selection transistor 245 illustrated in FIG. 1. A portion of the
second gate pattern 110c disposed on the bitline active portions
105 corresponds to the gate of the bitline transistor 205
illustrated in FIG. 1. Substantially the entire second gate pattern
110c may correspond to the bitline selection gate line 210
illustrated in FIG. 1.
[0061] A first interlayer insulating layer 112 may be substantially
disposed on substantially the entire surface of the semiconductor
substrate 100. The first interlayer insulating layer 112 covers the
gate patterns 110a, 110b, and 110c. Furthermore, the first
interlayer insulating layer 112 may fill spaces between the gate
patterns 110a, 110b, and 110c. The first interlayer insulating
layer 112 may have a planarized upper surface. The first interlayer
insulating layer 112 may contain oxides, nitrides, and/or
oxynitrides.
[0062] Referring subsequently to FIGS. 2, 3A, 3B, 3C, and 3D, a
first wordline channel pillar 132a may be coupled to the first
global wordline GWL1 by sequentially penetrating the first
interlayer insulating layer 112, the first portion of the first
gate pattern 110a, and the insulating pattern 107. The first
wordline channel pillar 132a may be disposed in a first wordline
channel hole 123a. One or more first wordline channel pillars 132a
may penetrate the first portion of the first gate pattern 110a. In
other words, one or more first wordline channel pillars 132a may
penetrate one of the gates of the first wordline transistors (235a
in FIG. 1). Details of shapes of the first wordline channel pillar
132a will be described below. Due to the first wordline channel
pillar 132a, the first wordline transistor (235a in FIG. 1) has a
vertical-type channel. The vertical-type channel may be
substantially vertical to the upper surface of the semiconductor
substrate 100. The thickness of the first gate pattern 110a may
correspond to the channel length of the vertical-type channel, and
the circumference of the first wordline channel pillar 132a may
correspond to the channel width of the vertical-type channel.
[0063] One or more second wordline channel pillars 132b may be
coupled to the second global wordline GWL2 by sequentially
penetrating the first interlayer insulating layer 112, the second
portion of the first gate pattern 110a (that is, the gate of the
second wordline transistor), and the insulating pattern 107. The
second wordline channel pillar 132b may be disposed in a second
wordline channel hole 123b. One or more bias channel pillars 133
may be coupled to the bias line 242 by sequentially penetrating the
first interlayer insulating layer 112, the third portion of the
first gate pattern 110a (that is, the gate of the bias transistor),
and the insulating pattern 107. The bias channel pillar 133 may be
disposed in a bias channel hole 124. A block selection channel
pillar 134 may be coupled to the block selection doped region 106
by sequentially penetrating the first interlayer insulating layer
112, the block selection gate pattern 110b, and the insulating
pattern 107. The block selection channel pillar 134 may be disposed
in a block selection channel hole 125. One or more bitline channel
pillars 135 may be coupled to the global bitline GBL by
sequentially penetrating the first interlayer insulating layer 112,
the second gate pattern 110c, and the insulating pattern 107, of
the second region 60. The bitline channel pillar 135 may be
disposed in a bitline channel hole 127. Gate insulating patterns
130 may be interposed between the channel pillars 132a, 132b, 133,
134, and 135 and inner sidewalls of the channel holes 123a, 123b,
124, 125, and 127, respectively.
[0064] Upper surfaces of the channel pillars 132a, 132b, 133, 134,
and 135 may be substantially coplanar with the upper surface of the
first interlayer insulating layer 112. The channel pillars 132a,
132b, 133, 134, and/or 135 may be formed of semiconductor material.
The channel pillars 132a, 132b, 133, 134, and/or 135 may be doped
with a dopant different from a dopant in the first global wordline
GWL1, the second global wordline GWL2, the bias line 242, the block
selection doped region 106, and/or the global bitline GBL. For
instance, the channel pillars 132a, 132b, 133, 134, and/or 135 may
be doped with the first-type dopant. According to one embodiment of
the inventive concept, the channel pillars 132a, 132b, 133, 134,
and/or 135 may be substantially undoped. Due to the channel pillars
132a, 132b, 133, 134, and 135, the transistors 235a, 235b, 240,
245, and 205 illustrated in FIG. 1 may have vertical-type
channels.
[0065] A first wordline pad pattern 140a may be disposed on the
first interlayer insulating layer 112 to come in contact with the
upper surface of the first wordline channel pillar 132a. As
illustrated in drawings, when a plurality of first wordline channel
pillars 132a penetrate one of the gates of the first wordline
transistors (that is, the first portion of the first gate pattern
110a), the first wordline pad pattern 140a may come in contact with
the upper surfaces of the plurality of first wordline channel
pillars 132a penetrating one of the gates of the first wordline
transistors. A second wordline pad pattern 140b may be disposed on
the first interlayer insulating layer 112 to come in contact with
the upper surface of the second wordline channel pillar 132b. The
second wordline pad pattern 140b may also come in contact with the
upper surfaces of a plurality of second wordline channel pillars
132b penetrating one of the gates of the second wordline
transistors (that is, the second portion of the first gate pattern
110a). A plurality of first wordline pad patterns 140a may be
provided over the first gate pattern 110a and the first wordline
pad patterns 140a correspond to the first wordline active portions
104a, respectively. Also, a plurality of second wordline pad
patterns 140b may be provided over the first gate pattern 110a and
the second wordline pad patterns 140b correspond to the second
wordline active portions 104b, respectively. The first wordline pad
patterns 140a and the second wordline pad patterns 140b may be
spaced apart from each other.
[0066] A bias pad pattern 141 may be disposed on the first
interlayer insulating layer 112 to come in contact with the upper
surface of the bias channel pillar 133. Like the first and second
wordline pad patterns 140a and 140b, the bias pad pattern 141 may
come in contact with the upper surfaces of a plurality of bias
channel pillars 133 penetrating the gate of the bias transistor
(that is, the third portion of the first gate pattern 110a).
Preferably, the upper surface of the bias channel pillar 133 may be
electrically connected to the second gate pattern 110c through the
bias pad pattern 141. A first gate contact plug 137 may come in
contact with the upper surface of the second gate pattern 110c,
which extends in the second sub-region 54, by penetrating the first
interlayer insulating layer 112. The bias pad pattern 141 may
extend laterally to come in contact with the upper surface of the
first gate contact plug 137.
[0067] A block selection pad pattern 142 may be disposed on the
first interlayer insulating layer 112 to come in contact with the
upper surface of the block selection channel pillar 134. The block
selection pad pattern 142 may come in contact with the upper
surfaces of a plurality of block selection channel pillars 134
penetrating the block selection gate pattern 110b. The upper
surface of the block selection channel pillar 134 may be
electrically connected to the first gate pattern 110a. A second
gate contact plug 138 may come in contact with the upper surface of
the first gate pattern 110a by penetrating the first interlayer
insulating layer 112. The block selection pad pattern 142 extends
laterally to come in contact with the upper surface of the second
gate contact plug 138.
[0068] A bitline pad pattern 143 may be disposed on the first
interlayer insulating layer 112 arranged in the second region 60 to
come in contact with the upper surface of the bitline channel
pillar 135. The bitline pad pattern 143 may come in contact with
the upper surfaces of a plurality of bitline channel pillars 135
penetrating one of the gates of the bitline transistors.
[0069] The pad patterns 140a, 140b, 141, 142, and 143 may be
laterally spaced apart from each other. The pad patterns 140a,
140b, 141, 142, and 143 may contain at least one semiconductor
substance (for example, silicon, germanium, or silicon-germanium)
doped with the second-type dopant, conductive metal nitrides (for
example, titanium nitride or tantalum nitride), metal silicides
(for example, tungsten silicide or cobalt silicide), and metals
(for example, titanium, tantalum, tungsten, or aluminum). The first
wordline pad pattern 140a, the second wordline pad pattern 140b,
the bias pad pattern 141, the block selection pad pattern 142, and
the bitline pad pattern 143 may correspond to the first terminal of
the first wordline transistor 235a, the second wordline transistor
235b, the bias transistor 240, the block selection transistor 245,
and the bitline transistor 205, which are illustrated in FIG. 1,
respectively. A portion of the first global wordline GWL1, a
portion of the second wordline GWL2, a portion of the bias line
242, the block selection doped region 106, and a portion of the
global bitline GBL each coupled to the bottom surfaces of the
channel pillars 132a, 132b, 133, 134, and 135 may correspond to the
second terminal of the first wordline transistor 235a, the second
wordline transistor 235b, the bias transistor 240, the block
selection transistor 245, and the bitline transistor 205,
illustrated in FIG. 1, respectively.
[0070] A second interlayer insulating layer 145 may be disposed on
the pad patterns 140a, 140b, 141, 142, and 143 and the first
interlayer insulating layer 112. The second interlayer insulating
layer 145 may be formed of a dielectric material such as oxides,
nitrides, and/or oxynitrides.
[0071] A block selection gate line 247 may be disposed on the
second interlayer insulating layer 145 of the third sub-region 56
included in the first region 50. The block selection gate line 247
may extend in the y-axis direction. The block selection gate line
247 may be electrically connected to the block selection gate
pattern 110b. As illustrated in FIG. 3B the block selection gate
line 247 may electrically be connected to the block selection gate
pattern 110b through a third gate contact plug 149 penetrating
sequentially the second and first interlayer insulating layers 145
and 112. The block selection gate line 247 may be electrically
connected to the plurality of block selection gate patterns 110b
disposed in a column along the y-axis direction. The third gate
contact plug 149 may be insulated from the block selection pad
pattern 142. In this respect, the block selection gate pattern 110b
may include portions not being overlapped with the block selection
pad pattern 142, preferably.
[0072] As illustrated in FIGS. 2, 3A and 3B, wordline strapping
lines 152 may be formed on the second interlayer insulating layer
145 of the first sub-region 52. The wordline strapping lines 152
may extend in parallel with each other along the y-axis direction.
That is, the wordline strapping lines 152 may be parallel to the
block selection gate line 247 (FIG. 3B). The wordline strapping
lines 152 may be electrically connected to the first global
wordlines GWL1 and the second global wordlines GWL2, respectively
(FIG. 3B). The number of wordline strapping lines 152 may be equal
to the sum of the number of first global wordlines GWL1 and the
number of second global wordline GWL2. Preferably, each of the
wordline strapping lines 152 may be disposed on the device
isolation pattern 102 of the first sub-region 52. The wordline
strapping line 152 may come in contact with a wordline strapping
contact plug 147 coupled to the global wordline GWL1 or GWL2
disposed at one side of the first gate pattern 110a by sequentially
penetrating the second and first interlayer insulating layers 145
and 142. The wordline strapping contact plug 147 may simultaneously
come in contact with a portion of the global wordline GWL1 or GWL2
and a portion of the device isolation pattern 102 disposed at one
side of the global wordline GWL1 or GWL. The wordline strapping
line 152 may come in contact with a portion of the upper surface of
the wordline strapping contact plug 147 located at the upper part
of the device isolation pattern 102. The wordline strapping line
152 may contain conductive substances having low resistivity
compared to the global wordlines GWL1 and GWL2. For instance, the
wordline strapping line 152 may contain at least one selected from
conductive metal nitrides (for example, titanium nitride, or
tantalum nitride), metal silicides (for example, tungsten silicide
or cobalt silicide), and metals (for example, titanium, tantalum,
tungsten, aluminum, or copper).
[0073] Similarly, as shown in FIG. 3B, a bias strapping line 153
may be disposed on the second interlayer insulating layer 145 of
the second sub-region 54 and be electrically connected to the bias
line 242. The bias strapping line 153 may be disposed at the upper
part of the device isolation pattern 102 of the second sub-region
54. The bias strapping line 153 may come in contact with a bias
strapping contact plug 148 coupled to the bias line 242 disposed at
one side of the first gate pattern 110a by sequentially penetrating
the second and first interlayer insulating layers 145 and 142. The
bias strapping contact plug 148 may simultaneously come in contact
with a portion of the bias line 242 and a portion of the device
isolation pattern 102 disposed at one side of the bias line 242.
The bias strapping line 153 may come in contact with a portion of
the upper surface of the bias strapping contact plug 148 located in
the upper part of the device isolation pattern 102. The bias
strapping line 153 may contain conductive substances having low
resistivity compared to the bias line 242. For instance, the bias
strapping line 153 may be formed of the same substances as the
wordline strapping line 152.
[0074] Bitline strapping lines 155 may be disposed on the second
interlayer insulating layer 145 of the second region 60 and be
electrically connected to the global bitlines GBL as shown in FIG.
3B, respectively. Each of the bitline strapping lines 155 may be
disposed at the upper part of the device isolation pattern 102 of
the second region 60. Each of the bitline strapping line 155 may
come in contact with a bitline strapping contact plug 150 coupled
to the global bitline GBL disposed at one side of the second gate
pattern 110c by sequentially penetrating the second and first
interlayer insulating layers 145 and 142. The bitline strapping
contact plug 150 may simultaneously come in contact with a portion
of the global wordline GBL and a portion of the device isolation
pattern 102 disposed at one side of the global wordline GBL. The
bitline strapping line 155 may come in contact with a portion of
the upper surface of the bitline strapping contact plug 150 located
at the upper part of the device isolation pattern 102 of the second
region 60. The bitline strapping line 155 may contain conductive
substances having low resistivity compared to the global wordline
GBL. For instance, the bitline strapping line 155 may be formed of
the same substances as the wordline strapping line 152. The block
selection gate line 247 and the strapping lines 152, 153, and 155
may be disposed higher than the pad patterns 140a, 140b, 141, 142,
and 143 as illustrated in FIG. 3A.
[0075] In contrast, according to one embodiment of the inventive
concept, the pad patterns 140a, 140b, 141, 142, and 143 may be
disposed higher than the block selection gate line 247 and the
strapping lines 152, 153, and 155. In this case, the block
selection gate line 247 and the strapping lines 152, 153, and 155
may be disposed between the second interlayer insulating layer 145
and the first interlayer insulating layer 112, and the pad
patterns, 140a, 140b, 141, 142, and 143 may be disposed on the
second interlayer insulating layer 145. In addition, the channel
pillars 132a, 132b, 133, 134, and 135 extend upward and may further
penetrate the second interlayer insulating layer 145. Portions of
the channel pillars 132a, 132b, 133, 134, and 135, which penetrate
the second interlayer insulating layer 145, may be doped with the
second-type dopant that may be the same dopant as may be used to
dope the global wordlines GWL1 and GWL2, the bias line 242, and the
global bitline GBL.
[0076] With reference to FIGS. 2, 3A, 3B, 3C, and 3D, subsequently,
a third interlayer insulating layer 157 may be disposed on the
strapping lines 152, 153, and 155, the block selection gate line
247, and the second interlayer insulating layer 145. The third
interlayer insulating layer 157 may contain a dielectric material
such as oxides, nitrides, and/or oxynitrides.
[0077] The local bitline LBL may be disposed at the upper surface
of the semiconductor substrate 100 in the second region 60 while
extending in a vertical direction. The local bitline LBL may be
electrically connected to the upper surface of the bitline channel
pillar 135. The local bitline LBL extends upward over the upper
surface of the third interlayer insulating layer 157. The local
bitline LBL penetrates the third interlayer insulating layer 157
and may come in contact with the upper surface of the bitline pad
pattern 143. For instance, the bottom of the local bitline LBL
penetrates the third interlayer insulating layer 157 and may come
in contact with the upper surface of the bitline pad pattern 143,
while the top of the local bitline LBL may be protruded higher than
the upper surface of the third interlayer insulating layer 157. The
bitline pad patterns 143 may be arranged along rows and columns in
the second region 60. The plurality of local bitlines LBL may be
each coupled to the bitline pad patterns 143 and arranged in rows
and columns. The rows may be parallel to the x-axis direction, and
the columns may be parallel to the y-axis direction. The local
bitlines LBL, which form each of the rows, may be disposed at the
upper part of the second gate pattern 110c. The local bitline LBL
may be formed of conductive substances.
[0078] The plurality of first local wordlines LWL1 may be
sequentially stacked on the third interlayer insulating layer 157
disposed at one side of the local bitlines LBL included in each of
the rows. The first stacked local wordlines LWL1 intersect with the
local bitlines LBL. The first stacked local wordlines LWL1 may be
disposed at the upper part of the second gate pattern 110e located
at one side of the local bitline LBL. The lowermost and uppermost
first local wordlines LWL1 are illustrated in FIGS. 2 and 3A, but
at least a first local wordline LWL1 may further be interposed
between the lowermost and uppermost first local wordlines LWL1. The
stacked first local wordlines LWL1 may be spaced apart from each
other up and down by a first inter-line insulating pattern 165a. A
first capping insulating pattern 165na may be disposed on the
uppermost first local wordline LWL1.
[0079] The plurality of second local wordlines LWL2 may be
sequentially stacked on the third interlayer insulating layer 157
disposed at the other side of the local bitlines LBL included in
each of the rows. The stacked second local wordlines LWL2 intersect
with the local bitlines LBL. Preferably, the stacked second local
wordlines LWL2 may be disposed at the upper part of the second gate
pattern 110c located at the other side of the local bitline LBL.
Therefore, the local bitline LBL and the first and second local
wordlines LWL1 and LWL2 located at both sides of the local bitline
LBL may be disposed at the upper part of the second gate pattern
110c. The stacked second local wordlines LWL2 may also be spaced
apart from each other up and down by a second inter-line insulating
pattern 165b. The second inter-line insulating pattern 165b may be
formed of the same substance as the first inter-line insulating
pattern 165a. A second capping insulating pattern 165nb may be
disposed on the uppermost second local wordline LWL2. The second
capping insulating pattern 165nb may be formed of the same
substance as the first capping insulating pattern 165na. The number
of stacked second local wordlines LWL2 may be equal to that of
stacked first local wordlines LWL1. The stacked second local
wordlines LWL2 may be located at substantially the same level as
the stacked first local wordlines LWL1. As illustrated in FIG. 1,
the stacked first and second local wordlines LWL1 and LWL2, which
may be located at the same position and intersect with both
sidewalls of the local bitline LBL, are defined as a local wordline
group LWLg. A plurality of stacked local wordline groups may
intersect with the local bitlines LBL of each row.
[0080] Memory cells may be formed at intersections between the
first local wordlines LWL1 and the local bitlines LBL and at
intersections between the second local wordlines LWL2 and the local
bitlines LBL, respectively. Each of the memory cells includes a
variable resistor 176. The variable resistor 176 may be changeable
into a plurality of states having different resistance values from
each other. The variable resistor 176 may be formed of material in
which the resistance values can be varied by the generation and
extinguishment of a filament and/or a bridge. For instance, the
variable resistor 176 may contain transition metal oxides.
[0081] In contrast, the variable resistor 176 may contain a
phase-change material in which the resistivity can be changed by
the supply temperature and/or the supply time of heat. For example,
the variable resistor 176 may be formed of a compound including at
least one of tellurium (Te) and selenium (Se), which are
chalcogenide elements, and at least one selected from Ge, Sb, Bi,
Pb, Sn, Ag, As, S, Si, P, O, and N.
[0082] Unlike this, the variable resistor 176 may contain a
magnetic tunnel junction (MTJ) structure in which the resistance
value can be varied according to the magnetization direction
between free layers and pinned layers.
[0083] The memory cell, which may be formed at the intersection
between the first local wordline LWL1 and the local bitline LBL,
corresponds to the first memory cell MCI illustrated in FIG. 1. In
addition, the memory cell, which may be formed at the intersection
between the second local wordline LWL2 and the local bitline LBL,
corresponds to the second memory cell MC2 illustrated in FIG. 1.
The variable resistor 176 between the first local wordline LWL1 and
the local bitline LBL may be included in the first memory cell, and
the variable resistor 176 between the second local wordline LWL2
and the local bitline LBL may be included in the second memory
cell.
[0084] As described above, the second gate pattern 110c, the first
gate pattern 110a, and the block selection gate pattern 110b may be
formed in the one row along the x-axis direction. As a result, the
first wordline pad patterns 140a and the second wordline pad
patterns 140b each disposed at the upper part of the first gate
patterns 110a and the bitline pad patterns 143 each disposed at the
upper part of the second gate patterns 110c may be formed in the
one row along the x-axis direction. The first local wordlines LWL1
and the second local wordlines LWL2 extend in the first region 50,
expecially, the second sub-region 52 along the x-axis direction. As
shown in FIGS. 2 and 3A,the first local wordlines LWL1 may be
electrically connected to the first wordline pad patterns 140a in a
single row, respectively. Similarly, the second wordlines LWL2 may
be electrically connected to the second wordline pad patterns 140b
in a single row, respectively.
[0085] The lowermost first local wordline of the stacked first
local wordlines LWL1 may be electrically connected to the upper
surface of the first wordline channel pillar 132a coupled to the
first global wordline GWL1 closest to the second gate pattern 110c
in the one row. Furthermore, the uppermost first local wordline of
the stacked first local wordlines LWL1 may be electrically
connected to the upper surface of the first wordline channel pillar
132a coupled to the first global wordline GWL1 farthest from the
second gate pattern 110c in the one row. Accordingly, in the
stacked first local wordlines LWL1, one of the first local
wordlines LWL1, which is located relatively high compared to the
other first local wordlines LWL1, may extend a greater length in
the x-axis direction compared to the other lower first local
wordlines LWL1. The lower surface of the first local wordlines LWL1
may come in contact with the upper surface of the contact plug 159
or 159n, which may be coupled to the first wordline pad pattern
140a by penetrating at least one of the insulating pattern 165a and
the interlayer insulating layers 157 and/or 145.
[0086] Similarly, as shown in FIGS. 2 and 3C, the lowermost second
local wordline of the stacked second local wordlines LWL2 may be
electrically connected to the upper surface of the second wordline
channel pillar 132b coupled to the second global wordline GWL2
closest to the second gate pattern 110c in the one row.
Furthermore, the uppermost second local wordline of the stacked
second local wordlines LWL2 may be electrically connected to the
upper surface of the second wordline channel pillar 132b coupled to
the second global wordline GWL2 farthest from the second gate
pattern 110c in the one row. In the stacked second local wordlines
LWL2, accordingly, the second local wordline located relatively
high may further extend in the x-axis direction compared to the
second local wordline located relatively low. The lower surface of
each of the second local wordlines LWL2 may come in contact with
the upper surface of the contact plug 159 or 159n, which may be
coupled to the second wordline pad pattern 140b, by penetrating at
least one of the insulating pattern 165a and the interlayer
insulating layers 157 and/or 145.
[0087] In FIG. 2, the upper surfaces of the local bitline LBL and
the contact plugs 137, 138, 147, 148, 149, 150, 159, and 159n are
illustrated in the form of a rectangle. The inventive concept,
however, is not limited thereto. The upper surfaces of the local
bitline LBL and the contact plugs 137, 138, 147, 148, 149, 150,
159, and 159n may be embodied in the forms of an oval, circle, or
polygon.
[0088] The stacked first local wordlines LWL1 are defined as a
first stacked line part, and the stacked second local wordlines
LWL2 are defined as a second stacked line part. A filling
insulating pattern 167 may fill a space between the first and
second stacked line parts. The upper surface of the filling
insulating pattern 167 may be coplanar with the upper surface of
the capping insulating patterns 165na and 165nb. The top of the
local bitline LBL, which may protrude toward the third interlayer
insulating layer 157, may penetrate the filling insulating pattern
167. For instance, the local bitline LBL may be disposed in a local
bitline hole 174 sequentially penetrating the filling insulating
pattern 167, the third interlayer insulating layer 157, and the
first interlayer insulating layer 145. The variable resistor 176
may be interposed between an inner sidewall of the first local
bitline hole 174 and the local bitline LBL.
[0089] The inter-line insulating patterns 165a and 165b and the
capping insulating patterns 165na and 165nb extend laterally and
may be disposed on the third interlayer insulating layer 157 of the
third sub-region 56. The first and second inter-line insulating
patterns 165a and 165b, which are located at substantially the same
height in the third sub-region 56, laterally contact each other to
form one inter-line insulating layer 165. Similarly, the first and
second capping insulating patterns 165na and 165nb, which are
disposed in the third sub-region 56, laterally contact each other
to form one capping insulating layer 165n. In other words, the
inter-line insulating layer 165 disposed in the third sub-region 56
may include extension parts of the first and second inter-line
insulating patterns 165a and 165b, and the capping insulating layer
165n disposed in the third sub-region 56 may include extension
parts of the first and second capping insulating patterns 165na and
165nb.
[0090] As illustrated in FIGS. 2 and 3B, the block selection signal
line 249 may be coupled to the block selection doped region 106
located at one side of the block selection gate pattern 110b. The
block selection signal line 249 may extend in a direction vertical
to the upper surface of the semiconductor substrate 100. The block
selection signal line 249 may be a pillar. The block selection
signal line 249 may include a lower plug 248a, a buffer pad 248b,
and an upper plug 248c. The lower plug 248a may come in contact
with the block selection doped region 106 by sequentially
penetrating the third, second, and first interlayer insulating
layers 157, 145, and 112. The upper plug 248c may sequentially
penetrate the capping insulating layer 165n, which may be disposed
on the third interlayer insulating layer 157 in the third
sub-region 56, and at least one inter-line insulating layer 165.
The buffer pad 248b may be disposed between the lower plug 248a and
the upper plug 248c. The buffer pad 248b may be formed of the same
substance as the lowermost first local wordline LWL1. A wiring 252
may be disposed on the capping insulating layer 165n in the third
sub-region 56. The wiring 252 may come in contact with the upper
surface of the block selection signal line 249. The block selection
signal line 249 may be coupled to the block selection circuit 270
illustrated in FIG. 1 through the wiring 252.
[0091] Plan views of one bitline transistor and one wordline
transistor illustrated in FIG. 2 will described in more detail with
reference to FIGS. 4A and 4B.
[0092] FIG. 4A is an enlarged plan view of the bitline transistor
illustrated in FIG. 2; and FIG. 4B is an enlarged plan view of the
wordline transistor illustrated in FIG. 2. FIG. 5 is a plan view
illustrating a modified example of a bitline channel hole included
in the semiconductor memory device according to one embodiment of
the inventive concept.
[0093] Referring to FIG. 4A, one bitline transistor includes the
second gate pattern 110c intersecting the bitline active portion
105 and at least one bitline channel pillar 135 coming in contact
with the bitline active portion 105 by penetrating the second gate
pattern 110c. As illustrated in FIG. 4A, the plurality of bitline
channel pillars 135 may penetrate the second gate pattern 110c. The
bitline pad pattern 143 may come in contact with the upper surface
of the channel pillars 135. The local bitline LBL may be disposed
on the bitline pad pattern 143, and the first and second wordlines
LWL1 and LWL2 are disposed at the upper part of the second gate
pattern 110c located at both sides of the local bitline LBL. As
described above, the first memory cell MC1 may be formed at the
intersection between the first local wordline LWL1 and the local
bitline LBL, and the second memory cell MC2 may be formed at the
intersection between the second local wordline LWL2 and the local
bitline LBL. The first and second memory cells MC1 and MC2 share
one local bitline LBL. For this reason, a planar region of the
first memory cell MC1 may have a length of 2F in the x-axis
direction and a length of 2F in the y-axis direction. Consequently,
the first memory cell MC1 may have a planar region of 2F.sup.2. In
addition, the first and second memory cells MC1 and MC2 share one
bitline transistor and may be disposed on the upper part of the
bitline transistor. The bitline transistor has a vertical-type
channel due to the bitline transistor pillar 135. For this reason,
the planar region of the bitline transistor may be equal to the sum
of the planar regions of the first and second memory cells MC1 and
MC2. That is, the planar region of the bitline transistor may have
a length of 2F in the x-axis direction and 4F in the y-axis
direction. As a result, one bitline transistor may have a planar
region of 8F.sup.2. The second gate pattern 110c may have a length
of 3F in the y-axis direction.
[0094] According to the embodiment of the inventive concept, the
bitline channel pillar 135 may have different shapes. As
illustrated in FIG. 5, one bitline channel pillar 135a may
penetrate the second gate pattern 110c. The one bitline channel
pillar 135a may be disposed in one bitline channel hole 127a
penetrating the second gate pattern 110c. In order to expand a
channel width of the bitline transistor, the upper surface of the
bitline channel pillar 135a may be a rectangular shape extending in
the y-axis direction.
[0095] Referring subsequently to FIG. 4B, the first wordline
transistor may include the first gate pattern 110a intersecting the
first wordline active portion 104a and at least one first wordline
channel pillar 132a penetrating the first gate pattern 110a. The
first wordline transistor has a vertical-type channel due to the
first wordline channel pillar 132a. For this reason, the first
wordline transistor may be embodied to have the same planar region
as the bitline transistor illustrated in FIG. 4A. Similarly, the
planar region of the second wordline transistor and the bias
transistor illustrated in FIG. 2 may be embodied to have the same
planar region as the bitline transistor illustrated in FIG. 4A. The
wordline transistors and the bias transistor may be formed in the
same shape as the bitline transistor.
[0096] According to the above-described semiconductor memory
device, the bitline transistor includes at least one bitline
channel pillar 135 penetrating the second gate pattern 110c. In
addition, the wordline transistor also includes at least one
wordline channel pillar 132a or 132b penetrating the first gate
pattern 110a. For this reason, the bitline transistor and the
wordline transistor have a vertical-type channel. Consequently, a
highly integrated semiconductor memory device can be formed.
[0097] Furthermore, the first and second memory cells MC1 and MC2
may share one local bitline LBL and one bitline transistor. As a
result, the first memory cell MC1 having the planar region of
2F.sup.2 and the second memory cell MC2 having the planar region of
2F.sup.2 can be formed. In addition to this, since the first and
second memory cells MCI and MC2 share one bitline transistor and
the bitline transistor has the vertical-type channel, the planar
region of the bitline transistor may be equal to the sum of the
planar regions of the first and second memory cells MC1 and MC2.
Consequently, the bitline transistor obtains amounts of sufficient
turn-on current and may prevent the planar region from being
enlarged by the bitline transistor.
[0098] In addition, the first gate pattern 110a including the gate
of the wordline transistor and the second gate pattern 110c
including the gate of the bitline transistor may be coupled by the
bias transistor. As a result, the first and second gate patterns
110a and 110c can be controlled by a single block selection
signal.
[0099] A method of forming the semiconductor memory device
according to one embodiment of the inventive concept will now be
described with reference to the accompanying drawings.
[0100] FIGS. 6A, 7A, 8A, 9A, 10A, and 11A, respectively, are
cross-sectional views taken along line I-I' of FIG. 2 and describe
a method of forming the semiconductor memory device according to
one embodiment of the inventive concept. FIGS. 6B, 7B, 8B, 9B, 10B,
and 11B, respectively, are cross-sectional views taken along line
III-III' of FIG. 2 and describe a method of forming the
semiconductor memory device according to one embodiment of the
inventive concept,.
[0101] With reference to FIGS. 6A and 6B, the semiconductor
substrate 100 including the first region 50 and the second region
60 is prepared. The first region 50 may include the first
sub-region 52, the second sub-region 54, and the third sub-region
56. The second sub-region 54 and the third sub-region 56 are
disposed at both sides of the first sub-region 52, respectively.
The device isolation pattern 102 may be formed on the semiconductor
substrate 100 to define the active portions 104a, 104b, 104c, 104d,
and 105. The first wordline active portions 104a, the second
wordline active portions 104b, the bias active portion 104c, and
the block selection active portions 104d are defined in the first
region 50. The first wordline active portions 104a and the second
wordline active portions 104b may be alternately disposed in the
first sub-region 52. The bias active portion 104c may be disposed
in the second sub-region 54, and the block selection active portion
104d may be disposed in the third sub-region 56. The active
portions 104a, 104b, 104c, 104d, and 105 may be doped with the
first-type dopant.
[0102] The second-type dopant ion may be implanted into the active
portions 104a, 104b, 104c, 104d, and 105 and may form the first
global wordline GWL1, the second global wordline GWL2, the bias
line 242, the block selection doped region 106, and the global
bitline GBL.
[0103] Subsequently, an insulating layer and a gate conductive
layer may be sequentially formed on substantially the entire
surface of the semiconductor substrate 100. By successively
patterning the gate conductive layer and the insulating layer, the
first gate pattern 110a, the block selection gate pattern 110b, and
the second gate pattern 110c may be formed. Furthermore, the
insulating pattern 107 may be formed so as to be interposed between
the gate patterns 110a, 110b, and 110c and the semiconductor
substrate 100. The gate patterns 110a, 110b, and 110c contain a
conductive substance. For instance, the gate patterns 110a, 110b,
and 110c may contain at least one selected from a
doped-semiconductor substance, conductive metal nitrides (for
example, titanium nitride or tantalum nitride), metal silicides
(for example, tungsten silicide or cobalt silicide), and metals
(for example, titanium, tantalum, or tungsten). The insulating
pattern 107 may contain oxides.
[0104] The first interlayer insulating layer 112 may be formed on
the semiconductor substrate 100 having the gate patterns 110a,
110b, and 110c. The first interlayer insulating layer 112 may have
a planarized upper surface.
[0105] Referring to FIGS. 7A and 7B, mask patterns 115 having
openings 117a, 117b, 118, 119, and 120 may be formed on the first
interlayer insulating layer 112. The mask patterns 115 may contain
a substance having an etch selectivity with respect to the first
interlayer insulating layer 112, the gate patterns 110a, 110b, and
110c, and the insulating pattern 107. For instance, the first
interlayer insulating layer 112 may contain a photosensitive
substance and/or a hard mask substance. When the first interlayer
insulating layer 112 and the insulating pattern 107 may be formed
of oxides, the hard mask substance may be nitrides or oxynitrides.
Channel holes are defined by the first openings 117a, 117b, 118,
119, and 120. At least one first opening 117a may be formed at a
region in which the first gate pattern 110a and the first wordline
active portion 104a may be overlapped with each other, and at least
a second opening 117b may be formed at a region in which the first
gate pattern 110a and the second wordline active portion 104b may
be overlapped with each other. At least a third opening 118 may be
formed at a region in which the first gate pattern 110a and the
bias active portion 104c may be overlapped with each other, and at
least a fourth opening 119 may be formed at a region in which a
block selection gate pattern 110b and a block selection active
portion 104d may be overlapped with each other. At least a fifth
opening 120 may be formed at a region in which the second gate
pattern 110c and the bitline active portion 105 may be overlapped
with each other. The first interlayer insulating layer 112 may be
exposed by the openings 117a, 117b, 118, 119, and 120.
[0106] Each of the openings 117a, 117b, 118, 119, and 120 may have
a width of 1F, which is a minimum line width of a design rule.
Spacers 121 may be formed at inner sidewalls of the openings 117a,
117b, 118, 119, and 120. The spacers 121 may contain a substance
having an etch selectivity with respect to the first interlayer
insulating layer 112, the gate patterns 110a, 110b, and 110c, and
the insulating pattern 107. For instance, when the first interlayer
insulating layer 112 and the insulating layer 107 may be formed of
oxides, the spacers may contain nitrides or oxynitrides.
[0107] Using the mask patterns 115 and the spacers 121 as an etch
mask, the first interlayer insulating layer 112, the gate patterns
110a, 110b, and 110c, and the insulating pattern 107 may be
sequentially etched. For this reason, channel holes 123a, 123b,
124, 125, and 127 are formed. The first wordline channel hole 123a
may be formed below the first opening 117a to expose the first
wordline active portion 104a, and the second wordline channel hole
123b may be formed below the second opening 117b to expose the
second wordline active portion 104b. The third wordline channel
hole 124 may be formed below the third opening 118 to expose the
bias active portion 104c, and the block selection channel hole 125
may be formed below the fourth opening 119 to expose the block
selection active portion 104d. The bitline channel hole 127 may be
formed below the fifth opening 120 to expose the bitline active
portion 105. By the channel holes 123a, 123b, 124, 125, and 127,
the first global wordline GWL1, the second global wordline GWL2,
the bias line 242, the block selection doped region 106, and the
global bitline GBL, which are formed in the active portions 104a,
104b, 104c, 104d, and 105, are exposed. Due to the spacers 121 on
the inner sidewalls of the openings 117a, 117b, 118, 119, and 120,
each of the channel holes 123a, 123b, 124, 125, and 127 may have a
width narrower than 1F, which is a minimum line width of a design
rule. As a result, it can obtain the alignment margin between the
channel holes 123a, 123b, 124, 125, and 127 and the gate patterns
110a, 110b, and 110c.
[0108] With reference to FIGS. 8A and 8B, after the channel holes
123a, 123b, 124, 125, and 127 are formed, the mask patterns 115 and
the spacers 121 may be removed. Subsequently, the gate insulating
patterns 130 may be formed at inner sidewalls of the channel holes
123a, 123b, 124, 125, and 127. The gate insulating patterns 130 may
contain oxides, nitrides, oxynitrides, and/or high-dielectric
substances. A method of forming the gate insulating patterns 130
will be described. A gate insulating layer may be conformally
formed on substantially the entire surface of the semiconductor
substrate 100 having the channel holes 123a, 123b, 124, 125, and
127. The gate insulating layer may be formed on the inner sidewalls
and bottoms of the channel holes 123a, 123b, 124, 125, and 127 and
on the upper surface of the first interlayer insulating layer 112.
The gate insulating layer may be formed by, for example, a Chemical
Vapor Deposition (CVD) or Atomic Layer Deposition (ALD). The gate
insulating layer on the bottoms of the channel holes 123a, 123b,
124, 125, and 127 may be then removed to expose the active portions
104a, 104b, 104c, 104d, and 105. At this time, since the gate
insulating layer on the inner sidewalls of the channel holes 123a,
123b, 124, 125, and 127 remains, the gate insulating patterns 130
may be formed. The gate insulating layer on the bottoms of the
channel holes 123a, 123b, 124, 125, and 127 may be removed by an
anisotropic etching. At this time, the gate insulating layer on the
first interlayer insulating layer 112 may also be removed.
[0109] The channel pillars 132a, 132b, 133, 134, and 135 are formed
in the channel holes 123a, 123b, 124, 125, and 127 to come in
contact with the exposed active portions 104a, 104b, 104c, 104d,
and 105, respectively. The channel pillars 132a, 132b, 133, 134,
and 135 may be formed of semiconductor substances. The channel
pillars 132a, 132b, 133, 134, and 135 may be formed in a
single-crystalline state by a selective epitaxial growth. In this
case, the upper surfaces of the channel pillars 132a, 132b, 133,
134, and 135 may be substantially coplanar with the upper surface
of the first interlayer insulating layer 112 by a planarization
process.
[0110] Alternatively, a semiconductor layer may be formed to fill
the channel holes 123a, 123b, 124, 125, and 127. After the
semiconductor layer is deposited in an amorphous state,
crystallization heat treatment may be carried out on the
semiconductor layer. The semiconductor layer may be planarized
until the first interlayer insulating layer 112 is exposed,
resulting in forming the channel pillars 132a, 132b, 133, 134, and
135,
[0111] The channel pillars 132a, 132b, 133, 134, and 135 may be in
an undoped state. Unlike this, the channel pillars 132a, 132b, 133,
134, and 135 may be doped with a dopant (that is, the first-type
dopant) different from that of the global wordline lines GWL1 and
GWL2, the bias line 242, the block selection doped region 106, and
the global bitline GBL. The channel pillars 132a, 132b, 133, 134,
and 135 may be doped in-situ or through ion implantation.
[0112] Referring to FIGS. 9A and 9B, the first gate contact plug
137 and the second gate contact plug 138 are formed. The first gate
contact plug 137 comes in contact with the second gate pattern 110c
by penetrating the first interlayer insulating layer 112, and the
second contact plug 138 comes in contact with the first gate
pattern 110a by penetrating the first interlayer insulating layer
112. Contact holes may be formed using the spacers 121 as shown in
FIG. 7A. The contact holes are used to form the gate contact plugs
137 and 138. Therefore, the gate contact plugs 137 and 138 may have
a width narrower than 1F. The gate contact plugs 137 and 138 may be
formed after the channel pillars 132a, 132b, 133, 134, and 135 are
formed. A conductive layer may be then formed on the first
interlayer insulating layer 112, and pad patterns 140a, 140b, 141,
142, and 143 are formed by patterning the conductive layer. Since
the shapes and functions of the pad patterns 140a, 140b, 141, 142,
and 143 are described with reference to FIGS. 2, 3A, 3B, 3C, and
3D, the detailed description will be omitted. The pad patterns
140a, 140b, 141, 142, and 143 may contain at least one selected
from a doped-semiconductor substance, metals (for example,
titanium, tantalum, or tungsten), conductive metal nitrides (for
example, titanium nitride or tantalum nitride), and metal silicides
(for example, tungsten silicide or cobalt silicide).
[0113] According to some embodiment of the inventive concept, the
channel pillars 132a, 132b, 133, 134, and 135 may be formed after
the gate contact plugs 137 and 138 are formed. Then the pad
patterns 140a, 140b, 141, 142, and 143 may be formed on the
resulting structure.
[0114] The second interlayer insulating layer 145 is formed on the
pad patterns 140a, 140b, 141, 142, and 143 and the first interlayer
insulating layer 112. Subsequently, the third gate contact plug 149
(see FIGS. 2 and 3B) and the strapping contact plugs 147, 148, and
150 (see FIGS. 2 and 3B) may be formed to sequentially penetrate
the second and first interlayer insulating layers 145 and 112. The
contact holes for the third gate contact plug 149 and the strapping
contact plugs 147, 148 and 150 may be formed to have a width
smaller than 1F using the above-described spacer 121.
[0115] Then, the block selection gate line 247 and the strapping
lines 152, 153, and 155 may be formed on the second interlayer
insulating layer 145. The block selection gate line 247 may come in
contact with the third gate contact plug 149 (see FIGS. 2 and 3B),
and the strapping lines 152, 153, and 155 may be coupled to the
strapping contact plugs 147, 148, and 150 (see FIGS. 2 and 3B),
respectively. Subsequently, the third interlayer insulating layer
157 may be formed on substantially the entire surface of the
semiconductor substrate 100.
[0116] According to some embodiments of the inventive concept, the
block selection gate line 247 and the strapping lines 152, 153, and
155 are formed before the second interlayer insulating layer 145
may be formed, whereas the channel pillars 132a, 132b, 133, 134,
and 135 and the pad patterns 140a, 140b, 141, 142, and 143 may be
formed after the second interlayer insulating layer 145 may be
formed. In this case, the channel holes 123a, 123b, 124, 125, and
127 continuously penetrate the second and first interlayer
insulating layers 145 and 112, the gate patterns 110a, 110b, and
110c, and the insulating pattern 107. Moreover, the first and
second gate contact plugs 137 and 138 may continuously penetrate
the second and first interlayer insulating layers 145 and 112.
[0117] With reference to FIGS. 10A and 10B, two contact plugs 159
may be formed to correspond to one of the first gate patterns 110a
by penetrating the third and second interlayer insulating layers
157 and 145. Two contact plugs 159 may be coupled to one of the
first wordline pad patterns 140a and one of the second wordline pad
patterns 140b, respectively, which may be disposed at the upper
part of the first gate pattern 110a. The contact plug 159 coupled
to the second wordline pad pattern 140b is illustrated in FIG. 2.
The contact plug 159 may contain at least one selected from metals
(for example, titanium, tantalum, or tungsten) and/or conductive
metal nitrides (for example, titanium nitride or tantalum
nitride).
[0118] The conductive layer may be formed on substantially the
entire surface of the semiconductor substrate 100 having the
contact plug 159, and a conductive pattern 162 may be formed by
patterning the conductive layer. The conductive pattern 162 comes
in contact with the upper surfaces of two contact plugs 159
corresponding to the first gate pattern 110a. The conductive
pattern 162 may wholly cover at least the second region 60. In
addition, the conductive pattern 162 may wholly cover the second
sub-region 54 and partially cover the first sub-region 52. The
inter-line insulating layer 165 may be formed on the semiconductor
substrate 100 having the conductive pattern 162.
[0119] Subsequently, two contact plugs (not illustrated) may be
formed and coupled to the other of the first wordline pad patterns
140a and the other of the second wordline pad patterns 140b located
at the upper part of the first gate pattern 110a. The conductive
pattern and the inter-line insulating layer may be formed and
coupled to these two contact plugs. A capping insulating layer 165n
n may be formed to cover substantially the entire surface of the
semiconductor substrate 100 after the uppermost conductive pattern
162n may be formed.
[0120] The contact plug 159, which may be coupled to the conductive
pattern located higher than the lowermost conductive pattern 162,
may sequentially penetrate the inter-line insulating layer and the
third and second interlayer insulating layers 157 and 145. The
lower plug 248a of the block selection signal line 249 illustrated
in FIG. 3B may be formed together with the contact plug 159 coupled
to the lowermost conductive pattern 162. Furthermore, the buffer
pad 248b of the block selection signal line 249 illustrated in FIG.
3B may be formed together with the lowermost conductive pattern
162.
[0121] The contact plugs 159 coupled to the lowermost conductive
pattern 162 of the conductive patterns may be coupled to the first
wordline pad pattern 140a and the second wordline pad pattern 140b
closest to the second gate pattern 110c, respectively. The contact
plugs 159n coupled to the uppermost conductive pattern 162 of the
conductive patterns may be coupled to the first wordline pad
pattern and the second wordline pad pattern farthest from the
second gate pattern 110c, respectively. As a result, the conductive
pattern located relatively high may have a wider planar region than
the conductive pattern located relatively low.
[0122] Referring to FIGS. 11A and 11B, the plurality of stacked
first local wordlines LWL1, the first inter-line patterns 165a
between the stacked first local wordlines LWL1, and the first
capping insulating pattern 165na may be formed by sequentially
patterning the capping insulating layer 165n, the conductive
patterns 159n and 159, and the inter-line insulating layer 165. At
this time, the plurality of stacked second local wordlines LWL2,
the second inter-line patterns 165b between the stacked second
local wordlines LWL2, and the second capping insulating pattern
165na may be simultaneously formed. The third interlayer insulating
layer 157 between the stacked first local wordlines LWL1 and the
stacked second local wordlines LWL2 may be exposed. The third
interlayer insulating layer 157 may contain an insulating substance
having an etch selectivity with respect to the inter-line
insulating layer. The stacked inter-line insulating layers 165 and
the capping insulating layer 165n may remain on the third
interlayer insulating layer 157 of the third sub-region 56.
[0123] Then, a filling insulating layer (not illustrated) may be
formed on substantially the entire surface of the semiconductor
substrate 100 to fill the space between the stacked first local
wordlines LWL1 and the stacked second local wordlines LWL2. The
filling insulating layer may be planarized until the capping
insulating patterns 165na and 165nb are exposed. Accordingly, the
filling insulating pattern 167 may be formed to fill the space. The
capping insulating patterns 165na and 165nb may contain an
insulating substance having an etch selectivity with respect to the
filling insulating pattern 167. For instance, the capping
insulating patterns 165na and 165nb contain nitrides or
oxynitrides, and the filling insulating pattern 167 may be formed
of oxides.
[0124] Subsequently, the mask pattern 170 may be formed on the
semiconductor substrate 100. The mask pattern 170 has an opening
172 to define the local bitline hole 174 illustrated in FIG. 3C.
The opening 172 may expose the upper part of the bitline pad
pattern 143 and the filling insulating pattern 167 between the
first and second local wordlines LWL1 and LWL2.
[0125] The local bitline hole 174 illustrated in FIG. 3C may be
formed by sequentially etching the filling insulating pattern 167,
the third interlayer insulating layer 157, and the second
interlayer insulating layer 145 using the mask pattern 170 as an
etching mask. The local bitline hole (see FIG. 3C) may expose the
bitline pad pattern 143. Then, the mask pattern 170 may be removed,
and a variable resistor layer may be conformally formed on the
entire surface of the semiconductor substrate 100. The variable
resistor layer may be disposed on the sidewall and bottom of the
local bitline hole 174. The bitline pad pattern 143 may be exposed
by removing the variable resistor layer disposed on the bottom of
the local bitline hole 174. At this time, a variable resistor layer
176 on the inner sidewall of the local bitline hole 174 remains.
Subsequently, the local bitline LBL illustrated in FIGS. 2 and 3C
may be formed to fill the local bitline hole 174.
[0126] The upper plug 248c may be formed to sequentially penetrate
the capping insulating layer 165n and the inter-line insulating
layers 165 in the third sub-region 56. The upper plug 248c may come
in contact with the buffer pad 248b of FIG. 3B. The upper plug 248c
of FIG. 3B may be formed before or after the local bitline LBL is
formed. Unlike this, the upper plug 248c of FIG. 3B may be formed
together with the local bitline LBL. When the upper plug 248c and
the local bitline LBL are simultaneously formed, the upper plug
248c and the local bitline LBL may be formed of the same substance,
also the variable resistor layer 176 may be disposed at the
sidewall of the upper plug 248c and between the insulating layers
159 and 159n of the third sub-region 56.
[0127] The semiconductor memory device illustrated in FIGS. 2 and
3A through 3D may be implemented by the above-described
methods.
[0128] The semiconductor memory device according to the
above-described embodiments may be realized in various types of
semiconductor packages. For example, the semiconductor memory
device according to some embodiments of the inventive concept may
be packaged using methods such as package on package (PoP), ball
grid array (BGAs), chip scale packages (CSPs), plastic leaded chip
carrier (PLCC), plastic dual in-line package (PDIP), die in waffle
pack, die in wafer form, chip on board (COB), ceramic dual in-line
package (CERDIP), plastic metric quad flat pack (MQFP), thin quad
flat pack (TQFP), small-outline integrated circuit (SOIC), shrink
small-outline package (SSOP), thin small-outline package (TSOP),
thin quad flat pack (TQFP), system in package (SIP), multi chip
package (MCP), wafer-level fabricated package (WFP), or wafer-level
processed stack package (WSP). A package mounted with the
semiconductor memory device according to some embodiments of the
inventive concept may further include a controller and/or a logic
device, for example, controlling the semiconductor memory
device.
[0129] FIG. 12 is a block diagram illustrating an electronic system
including the semiconductor memory device according to one
embodiment of the inventive concept.
[0130] Referring to FIG. 12, an electronic system 1100 according to
one embodiment of the inventive concept may include a controller
1110, an input/output device (I/O) 1120, a memory device 1130, an
interface 1140, and a bus 1150. The controller 1110, the
input/output device (I/O) 1120, the memory device 1130, and/or the
interface 1140 may be coupled to each other through the bus 1150.
The bus 1150 may be a transfer path of data.
[0131] The controller 1110 includes at least one microprocessor,
digital signal processor, microcontroller, and logic device
executing similar functions thereof. The I/O device 1120 may
include a key pad, a keyboard, or a display device. The memory
device 1130 may include the three-dimensional memory device
disclosed in the above-described embodiments of the inventive
concept. The memory device 1130 may include at least one
semiconductor memory device according to some embodiments of the
inventive concept described with reference to FIGS. 2, 3A through
3D, 4A, 4B, and 5. The memory device 1130 may further include other
types of semiconductor memory devices (for example, a DRAM device
and/or an SRAM device). The interface 1140 executes a function of
transmitting data to a communication network or receiving data from
a communication network. The interface 1140 may be in the form of
wire or wireless. For example, the interface 1140 may include an
antenna or a wireless/wire transceiver. Even though not
illustrated, the electronic system 1100 may be an operational
memory device for improving the operation of the controller 1110
and may further include a high-speed DRAM device and/or a
high-speed SRAM device.
[0132] The electronic system 1100 may be applicable to a personal
digital assistant (PDA), a portable computer, a web tablet, a
wireless phone, a mobile phone, a digital music player, a memory
card, or the electronic equipment capable of transmitting and/or
receiving information in a wired or wireless environment.
[0133] FIG. 13 is a block diagram illustrating a memory card
including the semiconductor memory device according to one
embodiment of the inventive concept.
[0134] Referring to FIG. 13, a memory card 1200 according to an
embodiment of the inventive concept includes a memory device 1210.
The memory device 1210 may include at least one semiconductor
memory device according to some embodiments of the inventive
concept described with reference to FIGS. 2, 3A through 3D, 4A, 4B,
and 5. The memory device 1210 may further include other types of
semiconductor memory devices (for example, a DRAM device and/or an
SRAM device). The memory card 1200 may include a memory controller
1220 controlling data exchange between a host and the memory device
1210.
[0135] The memory controller 1220 may include a processing unit
1222 generally controlling the memory card. The memory controller
1220 may include an SRAM 1221 used as an operational memory of the
processing unit 1222. The memory controller 1220 may further
include a host interface 1223 and a memory interface 1225. The host
interface 1223 may have a protocol for exchanging data between the
memory card 1200 and a host. The memory interface 1225 may make the
connection between the memory controller 1220 and the memory device
1210. The memory controller 1220 may further include an error
correction coding block (ECC) 1224. The error correction coding
block 1224 may detect and correct an error of data read from the
memory device 1210. Even though not illustrated, the memory card
1200 may further include a ROM device storing code data used to
interface a host. The memory card 1200 may be used as a portable
data storing card. Alternatively, the memory card 1200 may be
realized as a solid state disk (SSD) replacing a hard disk drive of
a computer system.
[0136] According to some embodiments of the inventive concept, the
first wordline channel pillar penetrates the gate of the first
wordline transistor, and the bitline channel pillar penetrates the
gate of the bitline transistor. Accordingly, the first wordline
transistor and the bitline transistor may have a vertical channel
to select the first memory cell formed at the intersection between
the first local wordline and the vertical local bitline. As a
result, the planar region of the first wordline transistor and the
bitline transistor may be reduced, thereby realizing the
highly-integrated semiconductor memory device.
[0137] In addition, according to one embodiment of the inventive
concept, since the gate of the bitline transistor may be coupled to
the gate of the first wordline transistor, the gate of the first
wordline transistor and the gate of the bitline transistor can be
controlled by one block selection signal. This can realize the
semiconductor memory device which may be improved in operational
efficiency.
[0138] Reference throughout this specification to "one embodiment"
"some embodiments" or "an embodiment" means that a particular
feature, structure, or characteristic described in connection with
the embodiment is included in at least one embodiment of the
present invention. Thus, the appearances of the phrases "in one
embodiment," "some embodiments," or "in an embodiment" in various
places throughout this specification are not necessarily all
referring to the same embodiment. Furthermore, the particular
features, structures, or characteristics may be combined in any
suitable manner in one or more embodiments.
[0139] It will be understood that when an element or layer is
referred to as being "on", "connected to" or "coupled to" another
element or layer, it can be directly on, connected or coupled to
the other element or layer or intervening elements or layers may be
present. In contrast, when an element is referred to as being
"directly on," "directly connected to" or "directly coupled to"
another element or layer, there are no intervening elements or
layers present. Like numbers refer to like elements throughout. As
used herein, the term "and/or" includes any and all combinations of
one or more of the associated listed items.
[0140] It will be understood that, although the terms first,
second, third etc. may be used herein to describe various elements,
components, regions, layers and/or sections, these elements,
components, regions, layers and/or sections should not be limited
by these terms. These terms are only used to distinguish one
element, component, region, layer or section from another element,
component, region, layer or section. Thus, a first element,
component, region, layer or section discussed below could be termed
a second element, component, region, layer or section without
departing from the teachings of the present invention.
[0141] Spatially relative terms, such as "beneath", "below",
"lower", "above", "upper" and the like, may be used herein for ease
of description to describe one element or feature's relationship to
another element(s) or feature(s) as illustrated in the figures. It
will be understood that the spatially relative terms are intended
to encompass different orientations of the device in use or
operation in addition to the orientation depicted in the figures.
For example, if the device in the figures is turned over, elements
described as "below" or "beneath" other elements or features would
then be oriented "above" the other elements or features. Thus, the
exemplary term "below" can encompass both an orientation of above
and below. The device may be otherwise oriented (rotated 90 degrees
or at other orientations) and the spatially relative descriptors
used herein interpreted accordingly. Various operations will be
described as multiple discrete steps performed in a manner that is
most helpful in understanding the invention. However, the order in
which the steps are described does not imply that the operations
are order-dependent or that the order that steps are performed must
be the order in which the steps are presented. The above-disclosed
subject matter is to be considered illustrative and not
restrictive, and the appended claims are intended to cover all such
modifications, enhancements, and other embodiments, which fall
within the true spirit and scope of the inventive concept is to be
determined by the broadest permissible interpretation of the
following claims and their equivalents, and shall not be restricted
or limited by the foregoing detailed description.
* * * * *