U.S. patent application number 13/436042 was filed with the patent office on 2012-10-04 for temperature detecting apparatus, temperature detecting circuit and power semiconductor module.
This patent application is currently assigned to Rohm Co., Ltd.. Invention is credited to SHINTARO TAKAHASHI, HIROTAKA TAKIHARA.
Application Number | 20120250385 13/436042 |
Document ID | / |
Family ID | 46927077 |
Filed Date | 2012-10-04 |
United States Patent
Application |
20120250385 |
Kind Code |
A1 |
TAKIHARA; HIROTAKA ; et
al. |
October 4, 2012 |
TEMPERATURE DETECTING APPARATUS, TEMPERATURE DETECTING CIRCUIT AND
POWER SEMICONDUCTOR MODULE
Abstract
A temperature detecting apparatus includes a temperature
detecting circuit configured to output a first pulse signal
according to a temperature detected by a temperature sensor, and an
insulating transformer configured to transmit the first pulse
signal to an integrated circuit which is operated by an operation
voltage different from that of the temperature detecting circuit.
The insulating transformer is installed between the temperature
detecting circuit and the integrated circuit. The temperature
detecting circuit and the insulating transformer are mounted on a
common substrate.
Inventors: |
TAKIHARA; HIROTAKA; (Kyoto,
JP) ; TAKAHASHI; SHINTARO; (Kyoto, JP) |
Assignee: |
Rohm Co., Ltd.
Kyoto
JP
|
Family ID: |
46927077 |
Appl. No.: |
13/436042 |
Filed: |
March 30, 2012 |
Current U.S.
Class: |
363/132 ;
327/131; 327/512 |
Current CPC
Class: |
H02M 1/32 20130101; H02M
7/53871 20130101; H03K 2017/0806 20130101; H01L 2924/0002 20130101;
G01K 7/00 20130101; H02M 2001/327 20130101; G01K 1/02 20130101;
H01L 2924/0002 20130101; H01L 2924/00 20130101 |
Class at
Publication: |
363/132 ;
327/512; 327/131 |
International
Class: |
H03K 3/02 20060101
H03K003/02; H02M 7/5387 20070101 H02M007/5387; H03K 4/06 20060101
H03K004/06 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 1, 2011 |
JP |
2011-81795 |
Apr 4, 2011 |
JP |
2011-82673 |
Apr 4, 2011 |
JP |
2011-82674 |
Mar 9, 2012 |
JP |
2012-52530 |
Claims
1. A temperature detecting apparatus, comprising: a temperature
detecting circuit configured to output a first pulse signal
according to a temperature detected by a temperature sensor; and an
insulating transformer configured to transmit the first pulse
signal to an integrated circuit which is operated by an operation
voltage different from that of the temperature detecting circuit,
the insulating transformer being installed between the temperature
detecting circuit and the integrated circuit, wherein the
temperature detecting circuit and the insulating transformer are
mounted on a common substrate.
2. The temperature detecting apparatus of claim 1, wherein the
insulating transformer comprises a primary coil through which a
current flows based on the first pulse signal from the temperature
detecting circuit and a secondary coil configured to generate a
current to be transmitted to the integrated circuit, the primary
coil and the secondary coil being formed at upper and lower
portions of the insulating transformer with a dielectric layer
interposed therebetween.
3. The temperature detecting apparatus of claim 1, wherein when the
temperature detected by the temperature sensor reaches a
predetermined limit value, the temperature detecting circuit
outputs a second pulse signal and the insulating transformer
transmits the second pulse signal from the temperature detecting
circuit to the integrated circuit.
4. The temperature detecting apparatus of claim 1, wherein a pulse
generator is configured to shape pulse widths of a high level and a
low level of the first pulse signal or the second pulse signal, and
generate and output a pulse having a width smaller than those of
the pulse signals, the pulse generator being installed in the
vicinity of the primary coil of the insulating transformer.
5. The temperature detecting apparatus of claim 4, wherein a signal
demodulation circuit is configured behind the secondary coil, the
signal demodulation circuit configured to demodulate a pulse
signal, the pulse width of which is shaped by the pulse generator
into a signal having the original pulse width, the secondary coil
of the insulating transformer configured to generate a current to
be transmitted to the integrated circuit.
6. A temperature detecting circuit, comprising: an AD conversion
circuit configured to convert a temperature detection signal from a
temperature sensor into a digital temperature detection signal; a
triangular wave generation circuit configured to output a digital
signal equivalent to a triangular waveform as a time series; and a
comparator configured to compare the digital temperature detection
signal output from the AD conversion circuit and the digital signal
output from the triangular wave generation circuit and output a
duty signal.
7. The temperature detecting circuit of claim 6, wherein a period
for executing the comparison process in the comparator is composed
of four cycles, in which one cycle is defined as a section from a
maximum value of the triangular waveform to a next maximum value
thereof or a section from a minimum value of the triangular wave to
a next minimum value thereof.
8. The temperature detecting circuit of claim 7, wherein a duty
ratio is determined by the first two cycles during one period for
executing the comparison process.
9. The temperature detecting circuit of claim 6, wherein when a
temperature detected by the temperature sensor reaches a limit
value, a detection signal is output from the comparator.
10. The temperature detecting circuit of claim 6, wherein the
temperature sensor comprises an element configured to operate with
a constant current, the voltage of the element changing in response
to a temperature.
11. The temperature detecting circuit of claim 10, wherein a
constant current source is configured to flow a current to the
temperature sensor and include a current mirror circuit and change
the current flowing to the temperature sensor based on a value of a
resistor connected to the current mirror circuit.
12. A power semiconductor module, comprising: a power element
circuit configured by a power switching element; a temperature
detecting diode configure to measure a temperature of the power
switching element; and a temperature detecting circuit configured
to detect a temperature by a voltage signal from the temperature
detecting diode, wherein the temperature detecting diode and the
temperature detecting circuit are formed on a single chip as an SOI
structure.
13. The power semiconductor module of claim 12, wherein the chip
and the power element circuit are formed on a common frame and
installed in a single package.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application Nos. 2011-81795, filed on
Apr. 1, 2011; 2011-82673, filed on Apr. 4, 2011; 2011-82674, filed
on Apr. 4, 2011; and 2012-52530, filed on Mar. 9, 2012, the entire
contents of which are incorporated herein by reference.
TECHNICAL FIELD
[0002] The present disclosure relates to a temperature detecting
apparatus, a temperature detecting circuit, and a power
semiconductor module, and more particularly, to a temperature
detecting apparatus of a switching element constituting an inverter
device, a temperature detecting circuit of a switching element
constituting an inverter device, and a power semiconductor module
including a temperature detection diode for detecting a temperature
of a power switching element.
BACKGROUND
[0003] An electric motor combined with an engine is used as a power
source of a hybrid automobile, electric automobile, etc. When the
electric motor is driven, an inverter is used to obtain a
predetermined torque frequency. The inverter is assembled within an
automobile and is required to be small with high power in order to
secure space for passengers.
[0004] An operation temperature of the inverter greatly changes
according to the driving environment of the automobile, and in
particular, in case of an automobile including an inverter mounted
in an engine compartment, the inverter has a high temperature due
to an influence of heat generated from the engine. In addition to
the influence of ambient temperature, a switching element within
the inverter may cause the temperature to rise due to an influence
of a normal loss caused from a current flowing to the switching
element itself and a switching loss caused from the turn-on and off
of the switching element, and when the temperature exceeds a
predetermined level, the switching element may be damaged.
[0005] Techniques for suppressing the rise of temperature have been
already known.
[0006] For example, a photocoupler according to a related art
includes a light emitting diode (LED) located at a transmitter and
a photodiode placed at a receiver. The LED is disposed at a high
voltage temperature detecting circuit and the photodiode is
disposed at a low voltage substrate so that an operation voltage of
the LED and that of the photodiode are different, the LED and
photodiode cannot be manufactured on a common substrate, and it is
difficult to form the LED and photodiode on an identical
package.
[0007] Further, in another related art, a circuit for generating an
analog triangular wave is affected by a change in temperature in
the outer environment, a change in a power source voltage, etc.
Thus, since the circuit cannot generate a stable analog triangular
waveform, a problem arises in that precision of a duty cycle of an
output pulse signal output from a comparator cannot be
improved.
[0008] Further, in still another related art, an inverter circuit
and a diode for detecting temperature are mounted on an identical
substrate and made into a chip. When an IGBT (Insulated Gate
Bipolar transistor) of the inverter circuit operates, temperature
detection is performed. However, since the diode for detecting
temperature and a temperature detecting circuit are formed as
separate chips, detection precision is degraded due to an influence
of non-uniformity of the semiconductor elements. Moreover,
conventionally, in making chips with a silicon semiconductor, a
usage limitation temperature (junction temperature) is 150 degrees
Celsius, so it is difficult to form the diode for detecting
temperature and the temperature detecting circuit as one chip.
SUMMARY
[0009] The present disclosure provides some embodiments of a
temperature detecting apparatus capable of forming a temperature
detecting circuit and an insulating element on the same substrate
and reducing the size of an overall apparatus.
[0010] Further, the present disclosure provides some embodiments of
a temperature detecting circuit capable of increasing a degree of
precision of a duty cycle with an output pulse signal configured to
control a temperature rise, etc.
[0011] In addition, the present disclosure provides some
embodiments of a power semiconductor module capable of forming a
diode configured to detect temperature and a temperature detecting
circuit as one chip and increasing the degree of precision in
detecting the temperature.
[0012] According to one aspect of the present disclosure, there is
provided a temperature detecting apparatus. The temperature
detecting apparatus includes a temperature detecting circuit
configured to output a first pulse signal according to a
temperature detected by a temperature sensor; and an insulating
transformer configured to transmit the first pulse signal to an
integrated circuit which is operated at an operation voltage
different from that of the temperature detecting circuit. The
insulating transformer is installed between the temperature
detecting circuit and the integrated circuit. In this
configuration, the temperature detecting circuit and the insulating
transformer are mounted on a common substrate.
[0013] According to another aspect of the present disclosure, there
is provided a temperature detecting circuit. The temperature
detecting circuit includes an AD conversion circuit configured to
convert a temperature detection signal from a temperature sensor
into a digital temperature detection signal, a triangular wave
generation circuit configured to output a digital signal equivalent
to a triangular waveform as a time series, and a comparator
configured to compare the digital temperature detection signal
output from the AD conversion circuit and the digital signal output
from the triangular wave generation circuit and output a duty
signal.
[0014] According to still another aspect of the present disclosure,
there is provided a power semiconductor module. The power
semiconductor module includes a power element circuit configured by
a power switching element, a temperature detecting diode configured
to measure a temperature of the power switching element, and a
temperature detecting circuit configured to detect a temperature by
a voltage signal from the temperature detecting diode. With this
configuration, the temperature detecting diode and the temperature
detecting circuit are formed on a single chip as an SOI
structure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a view illustrating a circuit configuration of an
insulating signal transmission circuit used in a temperature
detecting apparatus of a first embodiment.
[0016] FIG. 2 is a view illustrating a circuit configuration of the
temperature detecting apparatus of the first embodiment.
[0017] FIG. 3 is a view illustrating an example of an insulating
transformer stacked structure disposed in the temperature detecting
apparatus of the first embodiment.
[0018] FIGS. 4A to 4C are views illustrating a mounted state of
circuit elements of the temperature detecting apparatus of the
first embodiment.
[0019] FIG. 5 is a view illustrating a configuration example of a
device using the temperature detecting apparatus of the first
embodiment.
[0020] FIG. 6 is a view illustrating a circuit configuration
example of a temperature detecting circuit of the first
embodiment.
[0021] FIG. 7 is a view illustrating a circuit configuration of a
temperature detecting circuit of a second embodiment.
[0022] FIG. 8 is a view illustrating a time chart in a digital
comparison circuit of the circuit of FIG. 7.
[0023] FIG. 9 is a view illustrating a block configuration of a
driving type device using a power semiconductor module of a third
embodiment.
[0024] FIG. 10 is a view illustrating a circuit configuration of
the power semiconductor module of the third embodiment.
[0025] FIG. 11 is a view illustrating a circuit configuration
example of a temperature detecting circuit of the third
embodiment.
DETAILED DESCRIPTION
[0026] Embodiments of the present disclosure will now be described
with reference to the accompanying drawings. In the following
description, regarding the drawings, like or similar reference
numerals are used for like or similar parts. However, the drawings
are schematic and it should be noted that the relationships between
thickness and planar dimensions, rates of thicknesses of respective
layers or the like are different from real ones. Thus, specific
thicknesses or dimensions should be determined in consideration of
the following description. Further, parts in which mutual dimension
relationships or rates are different are included in mutual
drawings.
[0027] Also, embodiments described hereinafter exemplify an
apparatus or a method for embodying a technical concept of the
present disclosure, and in embodiments of the present disclosure,
materials, configurations, depositions and the like of constituent
elements are not specified to those described hereinafter. The
embodiments of the present disclosure may be variably modified in
the scope of claims.
First Embodiment
[0028] Hereinafter, a first embodiment of the present disclosure
will be described in detail with reference to FIGS. 1 to 6.
[0029] A temperature detecting apparatus of the first embodiment
includes a temperature detecting circuit 76 (shown in FIG. 5)
configured to output a first pulse signal according to a
temperature detected by a temperature sensor 35 (shown in FIG. 2),
and insulating transformers 70 and 71 (shown in FIG. 2) configured
to transmit the first pulse signal to an integrating circuit which
operates at an operation voltage different from that of the
temperature detecting circuit 76. The insulating transformers 70
and 71 are installed between the temperature detecting circuit 76
and the integrated circuit. The temperature detecting circuit 76
and the insulating transformers 70 and 71 are mounted on a common
substrate.
[0030] In the insulating transformers 70 and 71, primary coils 70a
and 71a through which currents flow based on the first pulse signal
from the temperature detecting circuit 76, and secondary coils 70b
and 71b which are configured to generate a current to be
transmitted to the integrated circuit may be formed at upper and
lower portions of the insulating transformers 70 and 71 with a
dielectric layer interposed therebetween.
[0031] Further, the temperature detecting circuit 76 outputs a
second pulse signal when the temperature detected by the
temperature sensor 35 reaches a predetermined limit value, and the
insulating transformers 70 and 71 are configured to transmit the
second pulse signal from the temperature detecting circuit 76 to
the integrated circuit.
[0032] Pulse generators 4 and 5, which shape pulse widths of a high
level and a low level of the first pulse signal or the second pulse
signal, generate a pulse having a width smaller than those of the
pulse signals and output the same, are installed in the vicinity of
the primary coils of the insulating transformers 70 and 71.
[0033] A signal demodulation circuit, which is configured to
demodulate a pulse signal having a waveform shaped by the pulse
generators 4 and 5 into a signal having the original pulse width,
may be configured behind the secondary coil of the insulating
transformers 70 and 71, which are configured to generate a current
to be transmitted to the integrated circuit.
[0034] An insulating signal transmission circuit 1000 illustrated
in FIG. 1 includes a primary circuit 80 and a secondary circuit
81.
[0035] The insulating signal transmission circuit 1000 executes the
transmission of a signal from the primary circuit 80 to the
secondary circuit 81 and conversely executes the transmission of a
signal from the secondary circuit 81 to the primary circuit 80, as
well as executing insulation between the primary circuit 80 and the
secondary circuit 81. Thus, a circuit for controlling a signal
transmission is included in the insulating signal transmission
circuit 1000. Further, in an actual device, for example, the
primary circuit 80 may be used as a high voltage circuit and the
secondary circuit 81 may be used as a low voltage circuit.
[0036] The primary circuit 80 and the secondary circuit 81 are
configured as symmetrical circuits, and here, the primary circuit
80 may be used as a low voltage circuit and the secondary circuit
81 may be used as a high voltage circuit.
[0037] The primary circuit 80 includes a UVLO
(Undervoltage-Lockout; low voltage malfunction preventing) circuit
1, inverters 2, 3, 6, and 7, the pulse generators 4 and 5, an RS
flip-flop 8, a buffer 9, and a resistor 10. The inverter 2 and the
resistor 10 may function as a buffer. The UVLO (low voltage
malfunction preventing) circuit 1 monitors a power source voltage
VCC1. When the power source voltage VCC1 is lower than a
predetermined voltage, the UVLO (low voltage malfunction
preventing) circuit 1 stops the pulse generators 4 and 5 or the RS
flip-flop 8 and locks out an operation of stopping input/output
signals. Further, when the power source voltage VCC1 is returned to
have a normal voltage value, the UVLO circuit 1 is released to
start a normal operation.
[0038] Insulting transformers 31 and 32 are installed to link the
primary circuit 80 and the secondary circuit 81. The insulating
transformer 31 is composed of an inductor 31a and an inductor 31b
insulated from the inductor 31a. The insulating transformer 32 is
composed of an inductor 32a and an inductor 32b insulated from the
inductor 32a.
[0039] The insulating transformer 31, insulating the primary
circuit 80 and the secondary circuit 81, transmits a signal from
the primary circuit 80 to the secondary circuit 81. Similarly, the
insulating transformer 32 transmits a signal from the secondary
circuit 81 to the primary circuit 80, even while insulating the
primary circuit 80 and the secondary circuit 81.
[0040] The secondary circuit 81 includes a UVLO (low voltage
malfunction preventing) circuit 11, inverters 12 and 13, pulse
generators 14 and 15, inverters 16 and 17, an RS flip-flop 18, a
buffer 19, and a resistor 20.
[0041] The inverter 12 and the resistor 20 also achieve the role of
a buffer. The UVLO (low voltage malfunction preventing) circuit 11
monitors a power source voltage VCC2, and its operation is the same
as that of the UVLO circuit 1, so a description thereof will be
omitted.
[0042] When a square-wave pulse signal input to a terminal IN1 of
the primary circuit 80 is transmitted as is to the secondary
circuit 81 through the insulating transformer 31, a current
corresponding to time of a pulse width of the pulse signal flows to
the insulating transformer 31. Thus, if the pulse width becomes
long, power consumption increases. In order to prevent the increase
of power consumption, the pulse generators 4 and 5 shape the input
pulse signal such that a pulse width thereof is narrowed, and
output the shaped pulse signal. Since the pulse signal is formed to
have high and low level pulses being alternated, the pulse
generator 4 configured to narrow the high level pulse width and the
pulse generator 5 configured to narrow the low level pulse width
are installed.
[0043] Similarly, when a square-wave pulse signal input to a
terminal IN2 of the secondary circuit 81 is transmitted as is to
the primary circuit 80 through the insulating transformer 32, a
current corresponding to time of a pulse width of the pulse signal
flows to the insulating transformer 32. Thus, if the pulse width
becomes longer, power consumption increases. In order to prevent
the increase of power consumption, the pulse generators 14 and 15
shape the input pulse signal such that a pulse width thereof is
narrowed, and output the shaped pulse signal. The pulse generator
14 configured to narrow the high level pulse width and the pulse
generator 15 configured to narrow the low level pulse width are
installed.
[0044] Here, the pulse generators 4, 5, 14, and 15 generate a pulse
having a width narrower than that of the original signal by using
the rise of the pulse signal as a trigger, and all of the pulse
generators may have the same circuit configuration. The primary
circuit 80 is configured to be grounded at GND1, and the secondary
circuit 81 is configured to be grounded at the GND2. The primary
circuit 80 and the secondary circuit 81 are not configured to have
a common ground line, so a ground potential of the primary circuit
80 and that of the secondary circuit 81 are different.
[0045] Next, an operation of the insulating signal transmission
circuit 1000 will be described. The pulse signal input to the
terminal IN1 of the primary circuit 80 is inverted in the inverter
2. The inverted signal is input to the pulse generator 5. The pulse
generator 5 generates a pulse having a width narrower than that of
the original pulse signal by using the rise of the inverted signal
as a trigger, and then outputs the pulse to the primary inductor
31a of the insulating transformer 31. Due to a change in current in
response to the pulse supplied to the primary inductor 31a of the
insulating transformer 31, a current is generated from the
secondary inductor 31b of the insulating transformer 31, and then
supplied to the RS flip-flop 18 through the inverters 16 and
17.
[0046] Whether a high level signal is to be input to a terminal S
or to a terminal R of the RS flip-flop 18 is determined by a
direction of the current flowing across the secondary inductor 31b.
In this case, a high level signal is input to the terminal R of the
RS flip-flop 18 and a low level signal is input to the terminal S,
and an output Q has a low level signal. The low level signal from
the output Q is output to OUT1 through the buffer 19.
[0047] Since the pulse supplied to the primary inductor 31a of the
insulating transformer 31 is based on the inverted signal of the
pulse signal input to the terminal IN1, the pulse was generated in
response to the drop of the pulse signal input to the terminal IN1.
The insulating transformer 31 is operated based on a low level
pulse of the pulse signal input to the terminal IN1 to generate a
low level pulse in the RS flip-flop 18, and this causes the low
level pulse portion of the pulse signal input to the terminal IN1
to be demodulated.
[0048] Meanwhile, the inverted signal which was inverted in the
inverter 2 is again inverted in the inverter 3 so as to be returned
to its original state, that is, the state of the pulse signal which
was input to the terminal IN1. By using the rise of the pulse
signal as a trigger, the pulse generator 4 generates a pulse having
a width narrower than that of the original signal and outputs the
pulse to the primary inductor 31a of the insulating transformer 31.
Due to a change in current according to the pulse supplied to the
primary inductor 31a of the insulating transformer 31, a current is
generated from the secondary inductor 31b of the insulating
transformer 31, and then supplied to the RS flip-flop 18 through
the inverters 16 and 17.
[0049] In this case, when a pulse is generated from the pulse
generator 4, the direction of the current flowing across the
primary inductor 31a is opposite, so the direction of the current
flowing across the secondary inductor 31b is also opposite. Also, a
high level signal is input to the terminal S of the RS flip-flop 18
and a low level signal is input to the terminal R, so that the
output Q has a high level signal. The high level signal from the
output Q is output to OUT1 through the buffer 19.
[0050] In the above description, the insulating transformer 31 is
operated based on the high level pulse of the pulse signal input to
the terminal IN1, and a high level pulse is generated from the RS
flip-flop 18, which causes the high level pulse portion of the
pulse signal input to the terminal IN1 to be demodulated.
[0051] In this manner, by using the pulse generators 4 and 5, the
RS flip-flop 18, etc., the pulse signal input to the primary
circuit 80 can be demodulated by the secondary circuit 81, while
restraining power consumption for driving the insulating
transformer 31.
[0052] Meanwhile, an operation of transmitting a pulse signal input
to IN2 of the secondary circuit 81 to OUT2 of the primary circuit
80 through the pulse generators 14 and 15, the RS flip-flop 8 and
the like is the same as the operation of transmitting the pulse
signal input to IN1 as described above, so a description thereof
will be omitted.
[0053] Next, an example of a configuration of the temperature
detecting circuit will be described with reference to FIG. 6.
First, the external temperature sensor 35 is configured to include
two diodes connected in series. The temperature sensor 35 is
installed in the vicinity of a switching element such as a power
transistor. In the present embodiment, in which the temperature
sensor 35 is configured as diodes, the diodes as a temperature
sensor has the characteristic that a forward voltage is reduced
when the temperature is increased under a condition of a constant
current. The temperature of a switching element such as a power
transistor may be measured by supplying a predetermined current to
the diode and measuring a forward voltage.
[0054] As described above, since there is a need to make a constant
current flow to the diodes of the temperature sensor 35, a constant
current source includes an amplifier 41 functioning as an
operational amplifier, a FET 42, and a current mirror circuit 43.
The current mirror circuit 43 includes P type MOSFETs 43a and 43b.
A gate of the FET 43a and a gate of the FET 43b are connected, and
a drain of the FET 43a and a drain of the FET 43b are also
connected. The FET 43b is also connected to a diode.
[0055] If a current flowing between the drain and a source of the
FET 43b is determined, a current flowing between the drain and a
source of the FET 43a is also determined. The amplifier 41 and the
N type MOSFET 42 constitute a power amplifier.
[0056] A temperature detection voltage TAIN detected by the
temperature sensor 35 is input to an AD conversion circuit 44. The
AD conversion circuit 44 is configured as a so-called sequential
comparison AD conversion circuit. The TAIN signal converted into a
digital value in the AD conversion circuit 44 is input to a digital
comparison circuit 45.
[0057] The digital comparison circuit 45 is configured as a
counter, a digital comparator, or the like. An oscillation circuit
46 generates a clock pulse of a predetermined frequency, and the
clocks from the oscillation circuit 46 are counted by a counter
within the digital comparison circuit 45 to generate a digital
triangular signal. The digital comparison circuit 45 includes a
digital comparator to compare the digital triangular signal and the
TAIN signal which has been converted into a digital value. When the
TAIN signal having a digital value is greater than the digital
triangular signal, the digital comparison circuit 45 outputs a high
level signal. When the TAIN signal having a digital value is
smaller than the digital triangular signal, the digital comparison
circuit 45 outputs a low level signal.
[0058] The output signal from the digital comparison circuit 45 is
then output to an inverter circuit. The inverter circuit includes
an N type MOSFET 37 and a P type MOSFET 36. A source of the FET 36
and a drain of the FET 37 are connected, and a gate of the FET 36
and a gate of the FET 37 are also connected. An output signal from
the digital comparison circuit 45 is input to the gate of the FET
36 and the gate of the FET 37.
[0059] The output signal from the digital comparison circuit 45 is
inverted by the inverter according to the FETs 36 and 37 so as to
be output as a TOUT signal. Further, a signal of a terminal VTO
indicates a high level value of the TOUT signal. Thus, the size of
the temperature from the temperature sensor 35 is detected by a
pulse width of the TOUT signal or by a duty signal.
[0060] Here, a FAL signal also included in a connection terminal
will be described. The FAL signal indicates that the temperature
detected by the temperature sensor 35 is considerably high, while
the temperature detection voltage signal TAIN is extremely low.
That is, the FAL signal is generated when the temperature detected
by the temperature sensor 35 reaches a limit value.
[0061] A DC power source is connected to a minus terminal of a
comparator 49. A voltage value of the DC power source is set to be
a voltage corresponding to the limit value of the temperature.
Meanwhile, the temperature detection voltage signal TAIN is input
to a plus terminal of the comparator 49. When the temperature
detection voltage signal TAIN is higher than a voltage value of the
DC power source, a high level signal is output from the comparator
49. The high level signal from the comparator 49 is input to the
gate of an N type MOSFET 38. Accordingly, the FET 38 is turned on
and the FAL terminal has a low level.
[0062] Meanwhile, when the detected temperature is decreased and so
the temperature detection voltage signal TAIN becomes lower than
the voltage value of the DC power source, the output from the
comparator 49 is reversed into a low level signal. The low level
signal from the comparator 49 is input to the gate of the N type
MOSFET 38. Accordingly, the FET 38 is turned off and the FAL
terminal has a high level. In this manner, it is detected that a
temperature rise of the temperature detection target has reached a
limit. The FAL signal is transmitted to an external control device
or the like, and used as a control signal for stopping an operation
of the temperature detection target, etc.
[0063] A temperature detecting apparatus 90 of FIG. 2 is configured
by combining the insulating signal transmission circuit 1000 of
FIG. 1 and the temperature detecting circuit 76 of FIG. 5. Circuit
elements denoted by the same reference numerals as those of the
temperature detecting circuit of FIG. 6 perform the same operations
as those of the circuits of FIG. 6, so a description of the
temperature detecting circuit as a high voltage side circuit will
be omitted.
[0064] In the temperature detecting apparatus in FIG. 2, unlike the
insulating signal transmission circuit 1000 of FIG. 1, a
bi-directional signal transmission is not performed between the
primary circuit and the second circuit separated in an insulating
transformer circuit 101, and a uni-directional signal is
transmitted from the temperature detecting circuit 100 to a signal
demodulation circuit 102.
[0065] Thus, in order to restrain power consumption of the
insulating transformers 31 and 32 as described above with reference
to FIG. 1, a pulse generator which shapes an input pulse signal
such that it has a narrow pulse width and outputs the pulse signal
is installed only in the temperature detecting circuit 100. Also,
the signals output from the temperature detecting circuit 100 are
two types of signals, namely, a TOUT signal as a temperature
detection signal and a FAL signal indicating that the temperature
has reached a limit temperature. As for a signal transmission path
of single type signal, as described above with reference to FIG. 1,
a pulse generator for narrowing a pulse width of a high level of
the input pulse signal and a pulse generator for narrowing a pulse
width of a low level of the input pulse signal are required.
[0066] For this reason, as shown in FIG. 2, a first pulse generator
52 and a second pulse generator 53 are installed so that they
transmit the pulse signal corresponding to the detected temperature
output from the digital comparison circuit 45. Further, a third
pulse generator 54 and a fourth pulse generator 55 are installed
for transmitting the FAL signal, which indicates that the
temperature has reached a limit temperature output from the
comparator 49.
[0067] The configurations in FIGS. 1 and 2 may correspond to each
other as follows. The inverter 2 in FIG. 1 corresponds to an
inverter 47 in FIG. 2, the inverter 3 corresponds to an inverter
48, the pulse generator 4 corresponds to the first pulse generator
52, the pulse generator 5 corresponds to the second pulse generator
53, the insulating transformer 31 corresponds to the insulating
transformer 70, the inverter 16 corresponds to an inverter 56, the
inverter 17 corresponds to an inverter 57, the RS flip-flop 18
corresponds to an RS flip-flop 60, and the buffer 19 corresponds to
a buffer 62.
[0068] Thus, since the operation of FIG. 2 is the same as that of
FIG. 1 as described above, a description of the corresponding
circuits of FIG. 2 and a description of the signal demodulation
circuit 102 will be omitted. Further, an inverter 50, an inverter
51, the third pulse generator 54, the fourth pulse generator 55,
the insulating transformer 71, an inverter 58, an inverter 59, an
RS flip-flop 61, and a buffer 63, which constitute a signal system
for transmitting and demodulating the FAL signal output from a
comparator 49, are operated as described above, so a description
thereof will also be omitted.
[0069] Here, the temperature detecting circuit 100 and the
insulating transformer circuit 101 are formed on the same substrate
(the same frame). The insulating transformer circuit 101, to which
a power source voltage is not required to be supplied, can obtain a
current signal according to a magnetic mutual induction, so the
insulating transformer circuit 101 may use a common substrate with
the temperature detecting circuit 100.
[0070] A state in which the temperature detecting apparatus of FIG.
2 as a package is mounted on the substrate is shown in FIGS. 4A to
4C.
[0071] FIG. 4A shows a photograph image of an interior viewed from
a package surface. FIG. 4B is an enlarged photograph image of FIG.
4A, in which the object positioned at the center is equivalent to
the insulating transformer circuit 101. Further, the object
disposed at the left of the object positioned at the center is
equivalent to the temperature detecting circuit 100, and the object
disposed at the right of the object disposed at the center is
equivalent to the signal demodulation circuit 102, both of which
are opposite each other.
[0072] A plastic mold is formed at a portion S between the
insulating transformer and the signal demodulation circuit.
[0073] The insulating transformer is configured as a chip and is
formed on the same substrate on which the temperature detecting
circuit is formed, and a copper island is formed on a rear surface
thereof. FIG. 4C shows a structure projected from the rear surface
on which the copper island is formed. A bonding pad is formed on
the copper island, and a copper coil is formed at an inner side of
the copper island.
[0074] A stacked structure of the insulating transformer formed as
a chip is shown in FIG. 3.
[0075] A silicon (Si) substrate is formed on the copper island, and
a primary or secondary copper coil is formed on the silicon
substrate.
[0076] A dielectric layer made of SiO.sub.2 or the like is stacked
to cover the copper coil. A secondary or primary copper coil is
formed on the dielectric layer. In this manner, the primary coil
and the secondary coil are electrically insulated by the dielectric
layer. FIG. 4C is a rear projected view of this.
[0077] Next, an example of a device to which the temperature
detecting apparatus of the present embodiment is applied is shown
in FIG. 5. FIG. 5 illustrates an example of a driving system
apparatus 400 in which signals are transmitted in both directions
between a low voltage substrate 410 and a high voltage substrate
411 of an automobile. The low voltage substrate 410 is mainly
configured by an ECU 72. ECU is called an electronic control unit
or an engine control unit, which executes controlling of an engine,
controlling of a driving system or a steering system, etc., by a
computer.
[0078] The high voltage substrate 411 includes a power
semiconductor module 77 for driving a motor 412. An insulating gate
bipolar transistor (IGBT) is illustrated as a power switching
element of the power semiconductor module 77. A gate of each IGBT
is connected to a gate driver 75.
[0079] A control signal output from the ECU 72 is transmitted to
the gate driver 75 through an isolator 73. A driving signal from
the gate driver 75 is output according to the control signal from
the ECU 72. PWM (Pulse-width modulation) controlling is performed
by the driving signal, and six IGBTs of the power semiconductor
module 77 are turned on or off at a desired timing to generate
3-phase AC power for driving the motor 412.
[0080] Meanwhile, the temperature is detected by a temperature
sensor (not shown) installed in the vicinity of the IGBTs of the
power semiconductor module 77, and the detected signal is input to
the temperature detecting circuit 76 and converted into a pulse
signal so as to be output and transmitted to the ECU 72 through an
isolator 74. In the related art, a photocoupler is used as an
isolator, but in the present embodiment, an insulating transformer
is used and a temperature detecting apparatus 90 formed by
packaging a temperature detecting circuit 76 and the isolator 74 is
used. The temperature detecting apparatus 90 of FIG. 5 is the
temperature detecting apparatus 90 illustrated in FIG. 2.
Comparative Example
[0081] In a comparative example, in a vehicle system in which a
vehicle body with a power switching element mounted therein is used
for a reference potential, a low voltage substrate and a high
voltage substrate are connected, the low voltage substrate and the
high voltage substrate are insulated, and a power card is mounted
on the high voltage substrate.
[0082] The power card is packaged by mounting a power switching
element and a diode as a temperature sensor thereon.
[0083] With this configuration, the power switching element
constitutes an inverter connected to a rotary electric machine used
for running a vehicle. The rotary electric machine used for running
a vehicle may be a rotary electric machine as a main machine for a
vehicle, a generator for charging a high voltage battery for
supplying power to the rotary electric machine as the main machine
for a vehicle, etc. Meanwhile, the temperature sensor is disposed
in the vicinity of the power switching element to detect the
temperature.
[0084] Further, a temperature detecting circuit configured to
change a temperature detection signal into a PWM signal is mounted
on the high voltage substrate. The low voltage substrate and the
high voltage substrate are insulated by a photocoupler, and the
photocoupler is an insulating unit for transmitting a signal from
one of the substrates to the other, while insulating both
substrates.
[0085] In general, the photocoupler may be used as an insulating
element for insulating the high voltage substrate and the low
voltage substrate, so the photocoupler and the temperature
detecting circuit are separately installed in a package, rather
than being disposed on the same substrate.
[0086] Further, the photocoupler may include a light emitting diode
(LED) of a transmission side and a photodiode of a reception side.
The LED is disposed at the temperature detecting circuit of a high
voltage side and the photodiode is disposed at a low voltage
substrate. In this manner, an operation voltage of the LED and that
of the photodiode are different and cannot be manufactured on a
common substrate, and it is difficult to form the LED and the
photodiode in the same package.
[0087] In the temperature detecting apparatus of the first
embodiment, the insulating transformers 70 and 71 are formed
between the temperature detecting circuit 100 for outputting the
first pulse signal according to a temperature detected by the
temperature sensor 35 and an integrated circuit operating at an
operation voltage different from that of the temperature detecting
circuit 100, and the first pulse signal is transmitted from the
temperature detecting circuit 100 to the integrated circuit, while
maintaining an insulating state between the insulating transformers
70 and 71.
[0088] In this manner, since the insulating transformers 70 and 71
are used, there is no need to supply different voltages to the
insulating transformers 70 and 71, and a signal transmission
according to a magnetic change is executed. Thus, the temperature
detecting circuit 100 and the insulating transformers 70 and 71 can
be mounted on a common substrate, and the apparatus can be reduced
in size.
Second Embodiment
[0089] Hereinafter, a second embodiment of the present disclosure
will be described in detail with reference to FIGS. 7 and 8.
[0090] A temperature detecting circuit 201 of the second embodiment
includes an AD conversion circuit 107, a triangular wave generation
circuit (a first counter 162 and an oscillator circuit 163), and a
comparator 161. The AD conversion circuit 107 is configured to
convert a temperature detection signal from a temperature sensor
121 into a digital value. The triangular wave generation circuit is
configured to output a digital signal equivalent to a triangular
wave as a time series. The comparator 161 is configured to compare
the digital temperature detection signal output from the AD
conversion circuit 107 and the digital signal output from the
triangular wave generation circuit. A duty signal is output from
the comparator 161.
[0091] A period for executing a comparison process in the
comparator 161 includes four cycles, one cycle of which is defined
as a section from a maximum value of the triangular wave to a next
maximum value of the triangular wave or a section from a minimum
value of the triangular wave to a next minimum value of the
triangular wave.
[0092] Also, during one period in which the comparison process is
executed, a duty ratio is determined by the first two cycles.
[0093] Further, when a temperature detected by the temperature
sensor 121 reaches a limit value, a detection signal may be output
from the comparator 161.
[0094] The temperature sensor 121 may include an element which
operates with a constant current and has the voltage changing in
response to a temperature.
[0095] Also, a constant current source, from which a current flows
to the temperature sensor 121, is configured to include a current
mirror circuit 301 and change the current flowing to a temperature
sensor 121 based on a value of a resistor connected to the current
mirror circuit 301.
[0096] In this configuration, for example, an external temperature
sensor 121 is configured to include two diodes connected in series.
The temperature sensor 121 is installed in the vicinity of a
switching element such as a power transistor.
[0097] In the present embodiment, in the case in which the
temperature sensor 121 is configured as diodes, the diodes as a
temperature sensor has the characteristic that a forward voltage is
reduced if the temperature is increased under a condition of a
constant current. The temperature of a switching element such as a
power transistor may be measured by supplying a predetermined
current to the diode and measuring a forward voltage.
[0098] As described above, since there is a need to make a constant
current flow to the diodes of the temperature sensor 121, a
constant current source includes variable resistors 151 and 152, an
amplifier 302 functioning as an operational amplifier, a FET 303,
and the current mirror circuit 301.
[0099] A reference voltage generation circuit 105 functions to
adjust a voltage required for a particular element within the
temperature detecting circuit 210 from a power source voltage VCC,
and to supply the same. For example, the reference voltage
generation circuit 105 may be configured to generate an output
voltage of 1.25V. The current mirror circuit 301 includes P type
MOSFETs 112 and 113. A gate of the FET 112 and a gate of the FET
113 are connected, and a drain of the FET 112 and a drain of the
FET 113 are also connected. The FET 113 is also connected to a
diode.
[0100] If a current flowing between the drain and a source of the
FET 113 is determined, a current flowing between the drain and a
source of the FET 112 is also determined. The amplifier 302 and the
N type MOSFET 303 constitute a power amplifier. A current flowing
to the FET 113 may be changed by adjusting the variable resistors
151 and 152, and a current flowing to the diode of the temperature
sensor 121 may also be changed.
[0101] Also, a ratio between the current flowing between the drain
and the source of the FET 113 and the current flowing between the
drain and the source of the FET 112 is determined by a ratio
between the resistance of an external resistor 120 connected to the
FET 303 and the internal resistance of the temperature sensor 121.
For example, in an aspect where the internal resistance of the
temperature sensor 121 is generally set to be about 1/20 of that of
the resistor 120, the current mirror circuit 301 functions as a
constant current source for supplying a current of about 20 fold of
the current flowing between the drain and the source of the FET 113
to the temperature sensor 121.
[0102] Meanwhile, the amplifier 104 functioning as an operational
amplifier amplifies a voltage generated by the reference voltage
generation circuit 105 and supplies the same to the AD conversion
circuit 107. A variable resistor 141 is installed between a minus
input terminal and an output terminal of the amplifier 104.
Further, a variable resistor 142 installed between the minus input
terminal of the amplifier 104 and GND is connected in series to the
variable resistor 141. An output voltage of the amplifier 104 is
adjusted by the variable resistors 141 and 142 and supplied to the
AD conversion circuit 107. For example, as illustrated in the FIG.
7, it is set to be 3.3V.
[0103] Next, a comparison between a temperature detection voltage
detected by the temperature sensor 121 and a triangular wave will
be described. The AD conversion circuit 107 includes a sequential
comparison register 171, a DA converter 172, an analog comparator
173, a register 174, and a DA converter 175. The AD conversion
circuit 107 is a so-called sequential comparison AD conversion
circuit. The sequential comparison register 171 is a register which
sequentially creates approximate values continuously. First, if
there is a command for starting conversion, the sequential
comparison register 171 sets an MSB as 1. This result is D/A
converted by the DA converter 172 so as to be returned to an analog
amount and then compared with a temperature detection voltage in
the comparator 173. In this case, if the voltage value of the
temperature detection voltage is higher, the MSB remains as 1.
[0104] Next, the second bit of the sequential comparison register
171 is also set to be 1. This result is D/A converted by the DA
converter 172 so as to be returned to an analog amount and compared
with the temperature detection voltage in the comparator 173. If
the temperature detection voltage is lower, the second bit of the
sequential comparison register 171 is returned to 0. In this
manner, the sequential bits are set and compared, starting from the
MSB to an LSB, and if the bit is greater than the temperature
detection voltage, the value is reset, and if it is smaller, the
value remains as is, and this operation is continuously performed.
If the operation continues up to the LSB, only a digital amount
closest to the temperature detection voltage remains. The digital
value is extracted and stored in the register 174.
[0105] Next, the digital signal of the temperature detection
voltage retained in the register 174 is output to a digital
comparison circuit 200. In the digital comparison circuit 200,
every signal is processed into a digital signal.
[0106] The digital comparison circuit 200 includes the comparator
161, the first counter 162, the oscillator circuit 163, and a
second counter 164. A digital value of the register 174 and an
output value of the first counter 162 are digitally compared in the
comparator 161, and if the digital value of the register 174 is
greater than the output value of the first counter 162, a high
level signal is output. Also, if the digital value of the register
174 is smaller than the output value of the first counter 162, a
low level signal is output.
[0107] Since the oscillator circuit 163 generates a clock signal of
a predetermined period, the number of clocks is counted by the
first counter 162. The first counter 162 sequentially outputs the
values obtained by counting the clocks from the oscillator circuit
163 to the comparator 161.
[0108] FIG. 8 is a time chart of the digital comparison circuit
200, which mainly shows data compared in the comparator 161 and a
time chart of an output from the comparator 161.
[0109] A clock from the oscillator circuit 163 is also input to the
second counter 164. The second counter 164 is used to cancel an
offset of the comparator 173 and set to count up to a digital value
equivalent to an offset amount of the comparator 173. If the
oscillator circuit 163 operates, the second counter 164 executes
counting until such time that it reaches an amount equivalent to
the offset of the comparator 173, and outputs a corresponding value
to the DA converter 175. The input digital value from the second
counter 164 is converted into an analog amount by the DA converter
175 and input to an offset adjustment terminal of the comparator
173. Accordingly, the offset of the comparator 173 is canceled.
[0110] A digital value output from the first counter 162 is
increased stepwise (e.g., by 1 at a time) by the clock from the
oscillator circuit 163, but it is equivalent to a sloped portion S1
of a triangular wave. Meanwhile, the first counter 162 is set to
reset a numerical value now into 0 when the numerical value counted
by the first counter 162 reaches a maximum value S3 of the
triangular wave. Thus, in order to transmit immediately from the
maximum value to 0, as shown in S3 of the triangular wave, the
value is a straight line without a slope, and the S3 is in a state
without a pulse width. In this manner, the triangular wave
generation circuit is configured with the first counter 162 and the
oscillator circuit 163 and outputs a digital signal equivalent to
the analog triangular waveform as a time series.
[0111] A digital value of the temperature detection voltage value
supplied from the register 174 to the comparator 161 is shown as
the TAIN signal in FIG. 8. As shown in FIG. 8, the TAIN signal and
a count value equivalent to the triangular wave output from the
first counter 162 are compared. Here, the period for performing the
comparison is determined to include 2 cycles, in which one cycle is
composed of a DutyHi period and a DutyLo period, as shown in each
period T0 to T4.
[0112] The DutyHi period corresponds to a period from a maximum
value to a next maximum value or corresponding to a period from a
minimum value to a next minimum value in the triangular wave. The
DutyLo period is a next period of the DutyHi period, and
corresponds to a period from a maximum value to a next maximum
value or a period from a minimum value to a next minimum value in
the triangular wave.
[0113] In FIG. 8, the extent that the level of the TAIN signal is
changed is illustrated, so it should be noted that the results
obtained by comparing the TAIN signal and the triangular wave
illustrated in FIG. 8 and the timing of TOUT equivalent to the
output signal from the comparator 161 are not consistent.
[0114] Specifically, a process of forming the TOUT signal will be
described. For example, as shown in FIG. 8, one period starting
from a maximum value of the triangular wave to a next maximum value
or one period from a minimum value of the triangular wave to a next
minimum value may be set to be 2.5 msec.
[0115] For example, during the period T1, when TAIN is in the 90%
line N1 of the maximum value of the triangular wave, the triangular
wave and N1 are compared in the comparator 161, and a high level
signal is output during a period in which N1 is higher than the
triangular wave and a low level signal is output during a period in
which N1 is lower than the triangular wave. Since a first DutyHi
period is equivalent to 90% of the period of 2.5 msec, it can be
calculated by 2.5.times.0.9=2.25 msec. This is a pulse period
described as a 2.25 msec Duty 90% clamp.
[0116] The next DutyLo period has a pulse width of 2.75 msec as the
sum of 2.5-2.25=0.25 msec and 2.5 msec. The period T1 includes two
DutyHi periods and two DutyLo periods, but during the first DutyHi
period and the first DutyLo period, the results obtained by
comparing the triangular wave and Ni are output from the comparator
161. During the next DutyHi period and the next DutyLo period, a
comparison process is not executed and a pulse of a high level
having a width of 2.5 msec and a pulse of a low level having a
width of 2.5 msec in a period of the triangular wave are
output.
[0117] The operation of the period T1 as described above is also
executed during T2, T3, and T4. During the period T2, if TAIN is
maintained in the state of 90% line N1 of the maximum value of the
triangular wave, like the operation during the period T1, a high
level pulse having a pulse width of 2.25 msec is output during the
first DutyHi period, and a low level pulse having a pulse width of
2.75 msec is output during the first DutyLo period.
[0118] During the next DutyHi period and the next DutyLo period, a
comparison process is not executed and a pulse of a high level
having a width of 2.5 msec and a pulse of a low level having a
width of 2.5 msec in a period of the triangular wave are output.
This state is illustrated in FIG. 8.
[0119] During the period T3, it is described that TAIN is in the
state of 10% line N2 of the maximum value of the triangular wave.
The triangular wave and N2 are compared in the comparator 161, and
a high level signal is output during a period in which N2 is higher
than the triangular wave and a low level signal is output during a
period in which N2 is lower than the triangular wave. Since the
first DutyHi period is equivalent to 10% of the period of 2.5 msec,
it can be calculated by 2.5.times.0.1=0.25 msec. This is a pulse
period described as a 0.25 msec Duty 10% clamp.
[0120] The next DutyLo period has a pulse width of 4.75 msec as the
sum of 2.5-0.25=2.25 msec and 2.5 msec. Further, during the next
DutyHi period and the next DutyLo period, a comparison process is
not executed and a pulse of a high level having a width of 2.5 msec
and a pulse of a low level having a width of 2.5 msec in a period
of the triangular wave are output.
[0121] During the period T4, since TAIN is maintained in the state
of 10% line N2 of the maximum value of the triangular wave, like
the operation during the period T3, a high level pulse having a
pulse width of 0.25 msec is output during the first DutyHi period,
and a low level pulse having a pulse width of 4.75 msec is output
during the first DutyLo period. During the next DutyHi period and
the next DutyLo period, a comparison process is not executed and a
pulse of a high level having a width of 2.5 msec and a pulse of a
low level having a width of 2.5 msec in a period of the triangular
wave are output.
[0122] In this manner, the results obtained by comparing the TAIN,
the temperature detection voltage signal of the temperature sensor
121, and the triangular wave by the comparator 161 at every period
Tn (n=0.about.N) are sent to a level shifter 108.
[0123] Here, the FAIL signal also present in a connection terminal
will be described. For example, in FIG. 8, as shown by a
relationship between the triangular wave and the TAIN signal during
the period T4, it is an operation where the TAIN signal does not
have a portion higher than that of the triangular waveform signal.
This indicates that a temperature detected by the temperature
sensor 121 is considerably high and the temperature detection
voltage signal TAIN is extremely low.
[0124] In this case, in order to inform that the temperature rise
of the temperature detection target has reached a limit, the
comparator 161 outputs a low level signal. The low level signal
from the comparator 161 is input to a gate of an N type MOSFET 109.
Accordingly, the FET 109 is turned off, and the FAIL terminal is
changed to a high level state. The FAIL signal is transmitted to an
external control device or the like, so as to be used as a control
signal for stopping an operation of the temperature detection
target, etc.
[0125] A DC voltage level of the output signal from the comparator
161 is converted by the level shifter 108, so a high level signal
is converted into a low level signal, and a low level signal is
converted into a high level signal. An output from the level
shifter 108 is input to a gate of an N type MOSFET 111 and a gate
of a P type MOSFET 110.
[0126] Since it is configured such that a source of the FET 110 and
a drain of the FET 111 are connected and the gate of the FET 110
and the gate of the FET 111 are connected, an inverter is
configured with the FET 110 and the FET 111. Thus, an output signal
from the level shifter 108 is inverted by the inverter based on the
FETs 110 and 111. Accordingly, logically, the output signal from
the comparator 161 becomes the TOUT signal as is. In this manner,
the temperature detected by the temperature sensor 121 is converted
into a pulse width of a pulse signal or a duty ratio and detected.
Further, a VTO signal illustrated in FIG. 8 indicates a high level
value of the TOUT signal. The TOUT signal is used, for example, to
control torque, as a switching frequency, etc.
[0127] As described above, in order to obtain the duty signal to
the comparator, the temperature detection voltage signal is
converted into a digital value and the triangular wave as a
reference for comparison is formed as a digital signal. Thus, since
the comparison process is executed based on the digital values, the
maximum value and the minimum value of the triangular wave, the
slope of the triangular wave, etc., are not changed like in the
case of an analog triangular wave, and a duty signal having
extremely good precision can be obtained.
Comparative Example
[0128] As a comparative example, there is a technique of detecting
a temperature of a switching element and cooling an inverter based
on the obtained information or measuring a temperature of the
switching element or the inverter to limit torque or a switching
frequency, in order to avoid damage to the switching element.
[0129] In this comparative example, in a PN junction semiconductor
element such as a diode, a voltage is changed into a linear form
over a temperature change. If a diode as a temperature sensor is
installed in the vicinity of the switching element and a voltage is
measured, temperature information having high precision and high
response can be obtained. If the temperature information having
high precision is obtained, torque can be output up to the
proximity of a breakdown temperature of the switching element, and
high density of the inverter can be expected.
[0130] As described above, if the PN junction semiconductor element
such as a diode is used as a temperature sensor, a comparator of
the temperature detecting circuit compares a temperature detection
voltage from a temperature sensor and a triangular wave generated
by an analog circuit.
[0131] The triangular wave and the temperature detection voltage
are compared in the comparator, and, for example, the comparator is
configured such that when the temperature detection voltage is
higher than the triangular wave, an output from the comparator has
a high level, and when the temperature detection voltage is lower
than the triangular wave, an output from the comparator has a low
level. In addition, since the temperature detection voltage is
decreased as the temperature increases, the duty cycle of the pulse
signal output from the comparator is changed, and a temperature is
prevented from being increased by controlling torque or a switching
frequency based on the pulse signal.
[0132] For example, if power controlling is performed by using a
power switch, a duty signal is generated by comparing an analog
triangular waveform and a numeral value based on a command
value.
[0133] Here, however, the output pulse signal from the comparator
is determined by comparing the triangular wave and the temperature
detection voltage. Thus, in order to enhance precision of the duty
cycle of the output pulse signal output from the comparator, a
maximum value and a minimum value of the analog triangular wave,
and the slope of the triangular wave are required to be generated
with good precision.
[0134] However, the circuit for generating the analog triangular
wave is affected by a temperature change of the outer environment,
a change in a power source voltage, etc., and cannot generate a
stable analog triangular waveform, so it is difficult to enhance
the precision of the duty cycle of the output pulse signal output
from the comparator.
[0135] The temperature detecting circuit of the second embodiment
includes the AD conversion circuit 107, the triangular wave
generation circuit (the first counter 162, the oscillator circuit
163), and the comparator 161. The AD conversion circuit 107 is
configured to convert a temperature detection signal from the
temperature sensor 121 into a digital value. The triangular wave
generation circuit is configured to output a digital signal
equivalent to a triangular waveform as a time series. The
comparator 161 is configured to compare the digital temperature
detection signal output from the AD conversion circuit 107 and the
digital signal output from the triangular wave generation circuit.
Further, a duty signal is output from the comparator 161. Thus,
since the triangular waveform, as well as the temperature detection
signal, is provided as a digital signal, and there is no change in
a maximum value and a minimum value of the triangular waveform, the
slope of the triangular waveform, etc., a duty output signal having
good precision can be obtained.
Third Embodiment
[0136] Hereinafter, a third embodiment of the present disclosure
will be described in detail with reference to FIGS. 9 to 11.
[0137] A power semiconductor module 77 of the third embodiment
includes a power element circuit configured by a power switching
element (IGBT), a temperature detecting diode (i.e., a temperature
sensor) 35 for measuring the temperature of the power switching
element, and a temperature detecting circuit 77a for detecting a
temperature by a voltage signal from the temperature detecting
diode 35. In addition, the temperature detecting diode 35 and the
temperature detecting circuit 77a are formed on a single chip by an
SOI structure.
[0138] Further, the chip and the power element circuit are formed
on a common frame and installed in a single package.
[0139] FIG. 9 illustrates an example of a driving system apparatus
400 in which signals are transmitted in both directions between a
low voltage substrate 410 and a high voltage substrate 411 of an
automobile. The low voltage substrate 410 is mainly configured by
an ECU 72. ECU is called an electronic control unit or an engine
control unit, which executes controlling of an engine, controlling
of a driving system or a steering system, etc., by a computer.
[0140] The high voltage substrate 411 includes the power
semiconductor module 77 having an inverter circuit 77b for driving
a motor 412. The power semiconductor module 77 is formed as a
single package, in which the temperature detecting circuit 77a and
the inverter circuit 77b are formed. An insulating gate bipolar
transistor (IGBT) is illustrated as a power switching element of
the inverter circuit 77b. A gate of each IGBT is connected to a
gate driver 75, and a flywheel diode is connected in parallel to
each IGBT. A DC voltage is supplied from a DC power source 78 to
each IGBT.
[0141] A control signal output from the ECU 72 is transmitted to a
gate driver 75 through an isolator 73. A driving signal from the
gate driver 75 is output according to the control signal from the
ECU 72. PWM controlling is performed by the driving signal, and six
IGBTs of the inverter circuit 77b are turned on or off at a desired
timing to generate 3-phase AC power for driving the motor 412.
[0142] Meanwhile, the temperature is detected by a temperature
sensor (not shown) based on a diode installed in the vicinity of
the IGBTs of the inverter circuit 77b, and the detected signal is
input to the temperature detecting circuit 77a and converted into a
pulse signal so as to be output and transmitted to the ECU 72
through an isolator 74. As the isolators 73 and 74, a photocoupler
or an insulating transformer is used.
[0143] In this configuration, the temperature detecting circuit 77a
and the temperature sensor 35 based on a diode are made into one
chip by using an HT-SOI (Silicon on Insulator) structure in
manufacturing a semiconductor stacked structure. The SOI structure
is a technique of forming a thin insulating oxide film on a silicon
substrate and further forming an electric circuit such as a
transistor, a sensor, etc. thereon. This technique has a fast speed
and high power characteristics with low power consumption in
comparison to a general bulk CMOS technique. A junction temperature
in the SOI structure is 225 degrees Celsius, and by executing one
chip based on the SOI structure, stable temperature detection with
high precision can be executed.
[0144] Further, the temperature sensor 35 and the temperature
detecting circuit 77a configured as one chip based on the SOI
structure are installed in the same package with the inverter
circuit 77b. That is, the chip of the inverter circuit 77b and the
chip of the temperature detecting circuit 77a including a
temperature sensor are disposed on the same frame. Thus, the
precision of temperature detection can be further improved.
[0145] FIG. 10 illustrates a position of the disposition of the
temperature sensor 35 configured as a diode in the power
semiconductor module 77 of FIG. 9. The temperature sensor 35 is
installed in the vicinity of the IGBT. Further, the temperature
sensor 35 is configured to include two diodes connected in series.
The diodes as the temperature sensor have the characteristic that a
forward voltage is reduced when the temperature is increased under
the condition of a constant current. The temperature of a switching
element such as a power transistor may be measured by supplying a
predetermined current to the diode and measuring a forward
voltage.
[0146] Further, in FIG. 10, it is illustrated that the temperature
detecting circuit 77a and the temperature sensor 35 are separated,
which makes understanding the disposition position of the
temperature detecting diode easier, and as described above, the
temperature detecting diode and the temperature detecting circuit
77a are made into one chip by the SOI structure. Meanwhile, a
control circuit 79 is installed as a circuit which outputs a
control signal and includes a function of the gate driver 75 of
FIG. 9.
[0147] Next, a circuit configuration example of the temperature
detecting circuit 77a illustrated in FIGS. 9 and 10 is shown in
FIG. 11. As described above, since there is a need to make a
constant current flow to the diodes of the temperature sensor 35, a
constant current source includes an amplifier 41 functioning as an
operational amplifier, a FET 42, and a current mirror circuit 43.
The current mirror circuit 43 includes P type MOSFETs 43a and 43b.
A gate of the FET 43a and a gate of the FET 43b are connected, and
a drain of the FET 43a and a drain of the FET 43b are also
connected. The FET 43b is also connected to a diode.
[0148] If a current flowing between the drain and a source of the
FET 43b is determined, a current flowing between the drain and a
source of the FET 43a is also determined. The amplifier 41 and the
N type MOSFET 42 constitute a power amplifier.
[0149] A temperature detection voltage TAIN detected by the
temperature sensor 35 is input to an AD conversion circuit 44. The
AD conversion circuit 44 is configured as a so-called sequential
comparison AD conversion circuit. The TAIN signal converted into a
digital value in the AD conversion circuit 44 is input to a digital
comparison circuit 45.
[0150] The digital comparison circuit 45 is configured as a
counter, a digital comparator, or the like. An oscillator circuit
46 generates a clock pulse of a predetermined frequency, and the
clocks from the oscillator circuit 46 are counted by a counter
within the digital comparison circuit 45 to generate a digital
triangular signal. The digital comparison circuit 45 includes a
digital comparator to compare the digital triangular signal and the
TAIN signal which has been converted into a digital value. When the
TAIN signal having a digital value is greater than the digital
triangular signal, the digital comparison circuit 45 outputs a high
level signal. When the TAIN signal having a digital value is
smaller than the digital triangular signal, the digital comparison
circuit 45 outputs a low level signal.
[0151] The output signal from the digital comparison circuit 45 is
then output to an inverter circuit. The inverter circuit includes
an N type MOSFET 37 and a P type MOSFET 36. A source of the FET 36
and a drain of the FET 37 are connected, and a gate of the FET 36
and a gate of the FET 37 are also connected. An output signal from
the digital comparison circuit 45 is input to the gate of the FET
36 and the gate of the FET 37.
[0152] The output signal from the digital comparison circuit 45 is
inverted by the inverter according to the FETs 36 and 37 so as to
be output as a TOUT signal. Further, a signal of a terminal VTO
indicates a high level value of the TOUT signal. Thus, the size of
the temperature from the temperature sensor 35 is detected by a
pulse width of the TOUT signal or by a duty signal.
[0153] Here, a FAL signal also included in a connection terminal
will be described. The FAL signal indicates that temperature
detected by the temperature sensor 35 is considerably high, while
the temperature detection voltage signal TAIN is extremely low.
That is, the FAL signal is generated when the temperature detected
by the temperature sensor 35 reaches a limit value.
[0154] A DC power source is connected to a minus terminal of a
comparator 49. A voltage value of the DC power source is set to be
a voltage corresponding to the limit value of the temperature.
Meanwhile, the temperature detection voltage signal TAIN is input
to a plus terminal of the comparator 49. When the temperature
detection voltage signal TAIN is higher than a voltage value of the
DC power source, a high level signal is output from the comparator
49. The high level signal from the comparator 49 is input to the
gate of the N type MOSFET 38. Accordingly, the FET 38 is turned on
and the FAL terminal has a low level.
[0155] Meanwhile, when the detected temperature is decreased and so
the temperature detection voltage signal TAIN becomes lower than
the voltage value of the DC power source, the output from the
comparator 49 is reversed into a low level signal. The low level
signal from the comparator 49 is input to the gate of the N type
MOSFET 38. Accordingly, the FET 38 is turned off and the FAL
terminal has a high level. In this manner, it is informed that a
temperature rise of the temperature detection target has reached a
limit. The FAL signal is transmitted to an external control device
or the like, and used as a control signal for stopping an operation
of the temperature detection target, etc.
Comparative Example
[0156] As a comparative example, in a system such as a 3-phase
inverter, the temperature of each phase IGBT element is increased
according to an operational state of the motor, such as a motor
locked state, and thus, there is a possibility of a breakdown. In
this configuration, the 3-phase inverter drives an electric motor
by using an insulated gate bipolar transistor (IGBT), which is a
power switching element. For this reason, the temperature of each
IGBT element is monitored, and when a monitored temperature is
higher than a predetermined temperature, in general, an output
power of the inverter and a driving frequency of the IGBT element
are reduced, thus restraining a temperature rise.
[0157] Further, in the comparative example, the inverter circuit
and the temperature detecting diode are mounted on the same
substrate and configured as chips, and when the IGBT of the
inverter circuit is operated, temperature detection is executed.
However, in this configuration, since the temperature detecting
diode and the temperature detecting circuits are formed as separate
chips, detection precision is degraded due to an influence of
non-uniformity between the semiconductor elements.
[0158] In addition, in making chips with the related art silicon
semiconductor, a usage limit temperature (junction temperature) is
150 degrees Celsius, so it is difficult to form the temperature
detecting diode and the temperature detecting circuit as a single
chip.
[0159] The third embodiment includes the power element circuit
configured by the power switching element, the temperature
detecting diode 35 installed to measure the temperature of the
power switching element, and the temperature detecting circuit 77a
for detecting the temperature by a voltage signal from the
temperature detecting diode 35. Further, the temperature detecting
diode 35 and the temperature detecting circuit 77a are formed on a
single chip by the SOI structure. Thus, a junction temperature can
be increased, relative precision between the semiconductor elements
of the temperature detecting circuit 77a and the temperature
detecting diode 35 can be improved, and temperature detection of
high precision can be executed.
[0160] According to the present disclosure, in some embodiments, it
is possible to provide a temperature detecting apparatus capable of
forming a temperature detecting circuit and an insulating element
on the same substrate and reduce the size of an overall
apparatus.
[0161] Further, according to the present disclosure, in some
embodiments, it is possible to provide a temperature detecting
circuit capable of increasing the degree of precision of a duty
cycle with an output pulse signal that can be employed for
controlling a temperature rise, etc.
[0162] Additionally, according to the present disclosure, in some
embodiments, it is possible to provide a power semiconductor module
capable of forming a temperature detecting diode and a temperature
detecting circuit as one chip and increasing the degree of
precision in detecting temperature.
[0163] According to the present disclosure, in some embodiments,
the temperature detecting apparatus and the temperature detecting
circuit of the present disclosure can be applied to detect the
temperature of a power device such as an inverter, a switching
element or the like, having a high temperature state.
[0164] Further, according to the present disclosure, in some
embodiments, the power semiconductor module of the present
disclosure can be applied to any power device using high voltage,
such as a hybrid vehicle, an electric vehicle, a home appliance, an
industrial device, etc.
[0165] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the disclosures. Indeed, the novel
methods and apparatuses described herein may be embodied in a
variety of other forms; furthermore, various omissions,
substitutions and changes in the form of the embodiments described
herein may be made without departing from the spirit of the
disclosures. The accompanying claims and their equivalents are
intended to cover such forms or modifications as would fall within
the scope and spirit of the disclosures.
* * * * *