U.S. patent application number 13/431272 was filed with the patent office on 2012-07-19 for method and image sensor with extended pixel dynamic range incorporating transfer gate with potential well.
This patent application is currently assigned to Intellectual Ventures II LLC. Invention is credited to Jaroslav Hynecek.
Application Number | 20120181417 13/431272 |
Document ID | / |
Family ID | 38660415 |
Filed Date | 2012-07-19 |
United States Patent
Application |
20120181417 |
Kind Code |
A1 |
Hynecek; Jaroslav |
July 19, 2012 |
METHOD AND IMAGE SENSOR WITH EXTENDED PIXEL DYNAMIC RANGE
INCORPORATING TRANSFER GATE WITH POTENTIAL WELL
Abstract
A charge transfer transistor includes: a first diffusion region
and a second diffusion region; a gate for controlling a charge
transfer from the first diffusion region to the second diffusion
region by a control signal; and a potential well incorporated under
the gate, wherein the first diffusion region is a pinned
photodiode. A pixel of an image sensor includes: a photodiode for
generating and collecting a photo generated charge; a floating
diffusion region for serving as a photo generated charge sensing
node; a transfer gate for controlling a charge transfer from the
photodiode to the floating diffusion region by a control signal;
and a potential well incorporated under the transfer gate.
Inventors: |
Hynecek; Jaroslav; (Allen,
TX) |
Assignee: |
Intellectual Ventures II
LLC
Wilmington
DE
|
Family ID: |
38660415 |
Appl. No.: |
13/431272 |
Filed: |
March 27, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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11711821 |
Feb 28, 2007 |
8159011 |
|
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13431272 |
|
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Current U.S.
Class: |
250/206 ;
257/E31.001; 438/73 |
Current CPC
Class: |
H04N 3/155 20130101;
H01L 27/1463 20130101; H01L 27/14609 20130101; H04N 5/3559
20130101; H04N 5/37457 20130101 |
Class at
Publication: |
250/206 ; 438/73;
257/E31.001 |
International
Class: |
G01J 1/44 20060101
G01J001/44; H01L 31/18 20060101 H01L031/18 |
Foreign Application Data
Date |
Code |
Application Number |
May 4, 2006 |
KR |
2006-0040713 |
Claims
1-12. (canceled)
13. A method, comprising: forming a photodiode in a substrate
having a first conductivity type; forming, in the substrate, a
floating diffusion region having a second conductivity type;
implanting an impurity of the second conductivity type to form an
implantation region in the substrate between the photodiode and the
floating diffusion region; and forming a charge transfer gate on
the substrate between the photodiode and the floating diffusion
region; wherein said implanting comprises implanting the
implantation region such that the implantation region is positioned
under the charge transfer gate and toward a side of the charge
transfer gate associated with the floating diffusion region.
14. The method of claim 13, wherein said implanting comprises
implanting an N-type impurity to form an N-type impurity region for
the implantation region.
15. The method of claim 13, wherein said implanting comprises
implanting the implantation region such that the implantation
region is not under the floating diffusion region.
16. The method of claim 13, wherein said implanting comprises
forming the implantation region such that the implantation region
is configured to store a charge from the photodiode, prevent the
charge from flowing back to the photodiode, and transfer the charge
onto the floating diffusion region in response to turning-off the
charge transfer gate.
17. The method of claim 13, further comprising: forming a reset
transistor configured to reset the floating diffusion region;
forming a source follower transistor configured to amplify a charge
signal of the floating diffusion region; and forming an addressing
transistor configured to select an output of the source follower
transistor and to provide the selected output as a pixel
output.
18. The method of claim 13, further comprising: forming another
photodiode in the substrate; implanting the impurity to form
another implantation region in the substrate between the other
photodiode and the floating diffusion region; and forming another
charge transfer gate on the substrate between the other photodiode
and the floating diffusion region; wherein said implanting the
impurity to form another implantation region comprises implanting
the other implantation region such that the other implantation
region is positioned under the other charge transfer gate and
toward a side of the other charge transfer gate associated with the
floating diffusion region.
19. The method of claim 18, wherein said implanting the impurity to
form another implantation region comprises forming the other
implantation region such that the other implantation region is
configured to store a charge from the other photodiode, prevent the
charge from flowing back to the other photodiode, and transfer the
charge onto the floating diffusion region in response to
turning-off the other charge transfer gate.
20. A method, comprising: collecting charge with a photodiode; in
response to turning on a charge transfer transistor, transferring
charge from the photodiode to both a floating diffusion region and
an implantation region that is separate from the floating diffusion
region and located under a charge transfer gate of the charge
transfer transistor toward a side of the charge transfer gate
associated with the floating diffusion region; and in response to
turning off the charge transfer transistor, transferring charge
from the implantation region to the floating diffusion region.
21. The method of claim 20, further comprising resetting the
floating diffusion region prior to said transferring charge from
the photodiode to both the floating diffusion region and the
implantation region.
22. The method of claim 20, further comprising generating an output
signal indicative of charge received by the floating diffusion
region from the photodiode and the implantation region.
23. The method of claim 20, further comprising: collecting charge
with another photodiode; in response to turning on another charge
transfer transistor, transferring charge from the other photodiode
to both the floating diffusion region and another implantation
region that is separate from the floating diffusion region and
located under another charge transfer gate of the other charge
transfer transistor toward a side of the other charge transfer gate
associated with the floating diffusion region; and in response to
turning off the other charge transfer transistor, transferring
charge from the other implantation region to the floating diffusion
region.
24. The method of claim 23, further comprising resetting the
floating diffusion region prior to said transferring charge from
the other photodiode to both the floating diffusion region and the
other implantation region.
25. The method of claim 23, further comprising generating an output
signal indicative of charge received by the floating diffusion
region from the other photodiode and the other implantation
region.
26. A method, comprising: transferring charge from a photodiode to
both a floating diffusion region and a charge collection region
that is separate from the floating diffusion region in response to
a first control signal; and transferring charge from the charge
collection region to the floating diffusion region in response to a
second control signal.
27. The method of claim 26, further comprising, in response to the
first control signal, turning on a charge transfer transistor to
transfer charge from the photodiode to both the floating diffusion
region and the charge collection region.
28. The method of claim 27, further comprising, in response to the
second control signal, turning off the charge transfer transistor
to transfer charge from the charge collection region to the
floating diffusion region.
29. The method of claim 26, further comprising, in response to the
first control signal, turning on a charge transfer transistor to
transfer charge from the photodiode to both the floating diffusion
region and the charge collection region located under a charge
transfer gate of the charge transfer transistor and toward the
floating diffusion region.
30. The method of claim 26, further comprising: transferring charge
from another photodiode to both the floating diffusion region and
another charge collection region that is separate from the floating
diffusion region and the charge collection region in response to a
third control signal; and transferring charge from the other charge
collection region to the floating diffusion region in response to a
fourth control signal.
31. The method of claim 30, further comprising, in response to the
third control signal, turning on another charge transfer transistor
to transfer charge from the photodiode to both the floating
diffusion region and the other charge collection region located
under a charge transfer gate of the another charge transfer
transistor and toward the floating diffusion region.
32. The method of claim 31, further comprising, in response to the
fourth control signal, turning off the other charge transfer
transistor to transfer charge from the other charge collection
region to the floating diffusion region.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present invention claims priority of Korean patent
application number 10-2006-0040713, filed on May 4, 2006 which is
incorporated by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a solid-state image sensor
having an improved performance with a higher charge well capacity
which results in a higher dynamic range (DR) and a better signal to
noise ratio (SNR), and more particularly to a complementary metal
oxide semiconductor (CMOS) image sensor.
[0003] A typical pixel of the CMOS image sensor includes a
photodiode, more precisely a pinned photodiode, and four
transistors. The photodiode collects a photo-generated charge that
is later transferred at a suitable moment by a charge transfer
transistor onto a floating diffusion (FD) node which detects the
charge. Prior to the charge transfer, however, the FD node must be
first reset by a reset transistor to a suitable reference voltage,
which is usually a terminal bias voltage, Vdd, or a bias close to
this level. The reset causes kTC noise, which is normally added to
a signal appearing on the FD node. Thus, it is necessary to read a
voltage on the FD node twice, before and after the charge transfer.
This operation is called a correlated double sampling (CDS)
procedure and the CDS procedure allows sensing of only the voltage
difference of the FD node caused by the charge transferred from the
photodiode. A source follower (SF) transistor with a gate connected
to the FD node, one terminal connected to the Vdd and the other
terminal connected to a common column sense line via an addressing
transistor performs sensing of the voltage on the FD node. For this
reason, it is necessary to incorporate the four transistors in each
pixel of a standard CMOS image sensor. The four transistors (4T)
pixel circuit with the pinned photodiode is proposed in U.S. Pat.
No. 5,625,210 issued to Lee, entitled "Active Pixel Sensor
Integrated with a Pinned Photodiode".
[0004] In modern CMOS sensor designs, circuits where several
photodiodes may be shared are used as can be found for an example
in U.S. Pat. No. 6,657,665B1 issued to Guidash, entitled "Active
Pixel Sensor with Wired Floating Diffusions and Shared Amplifier".
In this patent, a dual pixel includes two photodiodes located in
the neighboring rows of a sensor image array that share the same
circuit. The shared photodiode concept can result in having only
two metal bus lines in the row direction and two metal bus lines in
the column direction per photodiode as shown in FIG. 1. The shared
photodiode concept is very useful for designing small pixels since
spacing and width of the metal lines determine a minimum pixel
size. The operation of the shared photodiode pixel circuit can be
easily understood from a simplified schematic diagram of the
circuit 100 shown in FIG. 1. Two photodiodes 101 and 102 are
connected through the respective charge transfer transistors 103
and 104 to a FD node 114 which detects charge. The FD node 114 is
reset by a reset transistor 105 to a voltage level appearing on a
Vdd node 108. The Vdd node 108 is connected to a column Vdd bus
line 115. Gates of the charge transfer transistors 103 and 104 are
biased through the respective horizontal bus lines 110 and 111, and
a gate of the reset transistor 105 is biased through a horizontal
bus line 109. A gate control signal Tx1 of the charge transfer
transistor 103 is transferred through the horizontal bus line 110,
and a gate control signal Tx2 of the charge transfer transistor 104
is transferred through the horizontal bus line 111. Also, a gate
control signal Rx of the reset transistor 105 is transferred
through the horizontal bus line 109. The FD node 114 is connected
to a gate of a source follower (SF) transistor 106 that senses a
voltage on the FD node 114. A terminal of the SF transistor 106 is
connected to the Vdd node 108, thereby being connected to the Vdd
column bus line 115. An output of the SF transistor 106 is
connected through an addressing transistor 107 to a common column
sense line 113. A horizontal bus line 112 controls a bias of the
addressing transistor 107. A gate control signal Sx of the
addressing transistor 107 is transferred through the horizontal bus
line 112. As shown in FIG. 1, there are only two vertical (column)
lines, the Vdd bus line 115 and a column sense line 113. There are
also only two horizontal lines per photo site.
[0005] In order to better understand the operation of the 4T pixel,
FIG. 2 illustrates a cross-sectional view of a simplified device.
The simplified device 200 includes a single pinned photodiode 205,
and a charge transfer transistor and a reset transistor
corresponding to the photodiode 205. A source follower (SF)
transistor 201 and an addressing transistor 202 are shown only
schematically including connections of the SF transistor 201 and
the addressing transistor 202 to the corresponding circuit nodes. A
terminal of the SF transistor 201 is connected to a terminal bus
231. FIG. 2 also includes a potential diagram 206 of the simplified
device 200, and the potential diagram 206 illustrates a charge
transfer flow from the photodiode 205 into a FD node 203 and
finally into a terminal 204, doped with an N.sup.+-type impurity,
during charge reset. A pixel is formed in a P-type silicon
substrate 219 that has pixel isolation trenches 207 formed in the
P-type silicon substrate 219 and filled by an oxide 210. Another
oxide layer 218 is grown on a top portion of the substrate 219 that
isolates a gate 211 of a charge transfer transistor and a gate 212
of a reset transistor from the substrate 219. The gates 211 and 212
of the charge transfer transistor and the reset transistor are
connected to the respective horizontal bus lines 213 and 214 that
supply a required bias to the gates 211 and 212. Gate control
signals Tx and Rx of the charge transfer transistor and the reset
transistor are transferred through the horizontal bus lines 213 and
214, respectively. The pinned photodiode 205 is formed in the
substrate 219 by a P.sup.+-type diffusion region 208 that extends
along a sidewall of each of the trenches 207 all the way to the
P-type substrate 219 and by an N-type diffusion region 209. It is
also possible to use more sophisticated doping profiles as is well
known to those skilled in this art. The charge transfer transistor
with the gate 211 connects the pinned photodiode 205 to the FD node
203, and the reset transistor with the gate 212 connects the FD
node 203 to the terminal 204 doped with the N.sup.+-type
impurity.
[0006] As can be seen from the potential diagram 206 that is
located under the cross-sectional view of the simplified device 200
in FIG. 2, potential levels of the potential diagram 206 correspond
to each device built into the substrate 219, and the pinned
photodiode 205 forms a potential well that accumulates a signal
charge 221 during the time when the gate 211 of the charge transfer
transistor is off. The off state of the gate 211 of the charge
transfer transistor is indicated in the potential diagram 216 by a
potential level 222. An overflow charge (blooming current) from the
potential well flows via a path 230 through the reset transistor
directly to the terminal 204. When the charge transfer transistor
is turned on, the potential level 222 under the charge transfer
transistor changes to a potential level 223, and the signal charge
221 flows into the FD node 203. The signal charge transferred into
the FD node 203 is indicated by a reference numeral 224. The signal
charge 224 causes a potential level 225 of the FD node 203 to
change to a new potential level 226. The new potential level 226
represents a voltage signal that is sensed by the SF transistor
201. When applying an appropriate bias, i.e., a gate control signal
Sx, to a gate of the addressing transistor 202 through a bus line
215, the addressing transistor 202 is turned on and the voltage
signal from the SF transistor 201 is transferred to a pixel output
bus 216.
[0007] The pixel is reset by applying a single reset pulse 217 to
the horizontal bus line 214 connected to the gate 212 of the reset
transistor. The pixel reset changes a potential level 227 under the
reset transistor to a new potential level 228, which allows the
signal charge 224 to flow into the terminal 204 doped with the
N.sup.+-type impurity. The terminal 204 is biased at a Vdd
potential level 229, which is fixed by an external device power
source and cannot change. Thus, when all the signal charge 224 is
transferred to the terminal 204, the FD node 203 resumes the
original potential level 225 of the FD node 203. The potential
level 225 of the FD node 203 is only approximately equal to the Vdd
potential level 229 due to a reset feed through from the gate 212
of the reset transistor and kTC-reset noise. It is therefore
desirable to use the CDS procedure to sample both of the potential
levels 225 and 226 since a true photo-generated signal is the
difference between these two potential levels.
[0008] As is now clear from the potential diagram 206, a FD voltage
swing is limited on a high side by the Vdd potential level 229 and
on a low side by an empty pinned photodiode level 220 of the pinned
photodiode 205. When too much signal accumulates in the photodiode
205, not all of the signal can be transferred into the FD node 203,
which results in the lower sensitivity and increased noise. It is
desirable to have a large voltage swing on the FD node 203 and thus
decrease the pinned photodiode level 220, i.e., a pinning voltage
level of the pinned photodiode 205. However, the low pinning
voltage level results in a low photodiode charge storage capacity,
thereby causing a low dynamic range (DR) and a low signal to noise
ratio (SNR). Accordingly, it is necessary to find a suitable
compromise between these two competing requirements. This
compromise then determines an ultimate performance of the pixel
that is clearly determined by the maximum Vdd potential level 229
that can be used in the sensor. To have a large Vdd potential level
is a disadvantage, since the large Vdd potential level increases
the sensor power consumption.
SUMMARY OF THE INVENTION
[0009] Embodiments of the present invention are directed toward
providing a practical pixel design that can be used in a small
pixel and a CMOS image sensor array with a high performance.
[0010] In accordance with an aspect of the present invention, there
is provided a charge transfer transistor, including: a first
diffusion region and a second diffusion region; a gate for
controlling a charge transfer from the first diffusion region and
to the second diffusion region by a control signal; and a potential
well incorporated under the gate, wherein the first diffusion
region is a pinned photodiode.
[0011] In accordance with another aspect of the present invention,
there is provided a pixel of an image sensor, including: a
photodiode for generating and collecting a photo generated charge;
a floating diffusion region for serving as a photo generated charge
sensing node; a transfer gate for controlling a charge transfer
from the photodiode to the floating diffusion region by a control
signal; and a potential well incorporated under the transfer
gate.
[0012] In accordance with further aspect of the present invention,
there is provided a pixel of an image sensor, including: a
photodiode for generating and collecting a photo generated charge;
a floating diffusion region for serving as a photo generated charge
sensing node; a transfer gate for controlling a charge transfer
from the photodiode to the floating diffusion region by a control
signal; a potential well incorporated under the transfer gate; a
reset transistor for resetting the floating diffusion region; a
source follower transistor for amplifying a charge signal of the
floating diffusion region; and an addressing transistor for
selecting an output of the source follower transistor and providing
the selected output as a pixel output.
[0013] In accordance with still further aspect of the present
invention, there is provided a row shared photo site pixel,
including: a floating diffusion region for serving as a sensing
node; a plurality of photodiodes connected to the floating
diffusion region in parallel; a plurality of transfer gates for
controlling charge transfers from the photodiodes to the floating
diffusion region by a control signal; and a potential well
incorporated by the transfer gates.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIG. 1 illustrates a simplified schematic diagram of a
typical row-shared pixel circuit having two pinned photodiodes per
circuit and operating based on a four transistors (4T) pixel
principle.
[0015] FIG. 2 illustrates a simplified schematic diagram of a
typical pixel including a potential diagram showing a flow of an
accumulated signal, and a cross-sectional view of a photodiode, a
charge transfer transistor, and a reset transistor.
[0016] FIG. 3 illustrates a simplified schematic diagram of a pixel
including a potential diagram showing a flow of an accumulated
signal, and a cross-sectional view of a photodiode, a charge
transfer transistor, and a reset transistor in accordance with an
embodiment of the present invention.
DESCRIPTION OF SPECIFIC EMBODIMENTS
[0017] According to embodiments of the present invention, a
potential well that is formed under a gate of a charge transfer
transistor and interfaces with a floating diffusion (FD) node which
detects a charge is used. The use of the potential well allows
increasing a pinning voltage level of a photodiode above a minimum
excursion of the FD node. As a result, it is possible to build a
CMOS sensor array with a high charge storage capacity, a high
dynamic range (DR), a large signal to noise ratio (SNR), and a very
small sized pixel.
[0018] More particularly, the potential well is formed under the
gate of the charge transfer transistor. Thus, a floating diffusion
voltage swing is not limited by a pinning voltage level of a new
gate structure of the charge transfer transistor, and as a result,
a floating diffusion voltage can swing lower. The potential well
under the gate of the charge transfer transistor stores an excess
charge, prevents the excess charge from flowing back to the
photodiode, and transfers the excess charge onto the FD node when
the gate of the charge transfer transistor is turned off.
Accordingly, the pinning voltage level can be higher than that of a
gate structure formed without the potential well. The higher
pinning voltage level results in a higher photodiode well capacity
and thus in a higher DR and a higher SNR. Hereinafter, the
embodiment of the present invention will be described in more
detail with reference to FIG. 3.
[0019] FIG. 3 illustrates a cross-sectional view of a simplified
device. The simplified device 300 includes a single pinned
photodiode structure 305, and a charge transfer transistor and a
reset transistor corresponding to the pinned photodiode structure
305. A source follower (SF) transistor 301 and an addressing
transistor 302 are shown only schematically including connections
of the SF transistor 301 and the addressing transistor 302 to the
corresponding circuit nodes. A terminal 304 and a terminal of the
SF transistor 301 are connected to a bus line 331 to supply a
terminal bias Vdd. The simplified device 300 also includes a
potential diagram 306, and the potential diagram 306 illustrates a
charge transfer flow from a photodiode well into a FD node 303 and
finally into the terminal 304 during the charge reset. The pixel is
isolated by trenches 307 formed through a shallow trench isolation
(STI) process in a P-type silicon substrate 319. The trenches 307
are filled with an oxide 310. Another oxide layer 318 is grown on a
top portion of the substrate 319 that isolates a gate 311 of a
charge transfer transistor and a gate 312 of a reset transistor
from the substrate 319. The gate 311 of the charge transfer
transistor and the gate 312 of the reset transistor are connected
to the respective horizontal bus lines 313 and 314 that supply the
required biases to the gates 311 and 312. Gate control signals Tx
and
[0020] Rx of the charge transfer transistor and the reset
transistor are transferred through the horizontal bus lines 313 and
314, respectively. The pinned photodiode 305 is formed in the
substrate 319 by a P.sup.+-type diffusion region 308 that extends
along a sidewall of each of the trenches 307 all the way to the
P-type substrate 319 and by an N-type diffusion region 309. The
charge transfer transistor with the gate 311 connects the pinned
photodiode 305 to the FD node 303 and the reset transistor with the
gate 312 connects the FD node 303 to the terminal 304 doped with an
N.sup.+-type impurity. The charge transfer transistor has an
additional N-type implantation region 331 formed under the gate 311
of the charge transfer transistor, thereby forming a potential well
on the side of the FD node 303 in the substrate 319.
[0021] As can be seen from the potential diagram 306 shown under
the cross-sectional view of the simplified device 300, potential
levels corresponding to each device that is built into the
substrate 319 are shown. The pinned photodiode 305 forms a pinned
photodiode potential well that accumulates a signal charge 321
during the time when the gate 311 of the charge transfer transistor
is turned off. The off state of the gate 311 of the charge transfer
transistor is indicated in the potential diagram 306 by a potential
level 322. An overflow charge (a blooming current) from the
potential well flows via a path 334 to the terminal 304. When the
gate 311 of the charge transfer transistor is turned on, the
potential level 322 under the gate 311 of the charge transfer
transistor changes to a potential level 323, and the signal charge
321 flows into the FD node 303 doped with an N.sup.+-type impurity.
The signal charge transferred into the FD node 303 is indicated by
a reference numeral 324. Accordingly, a potential level 325 under
the FD node 303 is changed to a new potential level 326. As the
potential diagram 306 illustrates, the signal charge 324 is located
not only in the FD node 303 but also fills the potential well
formed by the implantation region 331 formed under the gate 311 of
the charge transfer transistor. The signal charge filling the
potential well formed by the implantation region 331 is indicated
by a reference numeral 332. Some of the signal charge 324 may also
spread over a barrier. When the gate 311 of the charge transfer
transistor is turned off, the potential level 323 under the gate
311 of the charge transfer transistor changes back to the potential
level 322. The signal charge 332 stored in the potential well
formed by the implantation region 331 now flows into the FD node
303 which detects the signal charge 332 and lowers further a final
potential level to a potential level 333. The potential level 333
may now be lower than a potential level 320 in a potential value as
shown in the potential diagram 306.
[0022] As is now clear from the potential diagram 306, a voltage
swing of the FD node 303 can be higher and not be limited on a low
side by the potential level 320, i.e., an empty pinned photodiode
potential level. The voltage swing of the FD node 303 is now
significantly increased in comparison to the typical voltage swing.
As a result, both the charge storage capacity and the voltage swing
of the FD node 303 which detects the charge can be increased when a
suitable compromise and optimum conditions are found. A pixel
performance can thus be significantly improved without causing any
penalty to an image sensor power consumption or a silicon chip
area.
[0023] According to the embodiments of the present invention, a
novel pixel generating a higher dynamic range (DR) and a better
signal to noise ratio (SNR), and having a higher well capacity and
a higher voltage swing on a FD node is described. The embodiments
of the present invention can be accomplished by incorporating a
potential well formed under the gate of the charge transfer
transistor. This improvements and innovations are not intended to
limit but to be illustrative. Also, persons skilled in this art can
make modifications and variations in light of the above teaching.
It is therefore to be understood that changes may be made in the
particular embodiment of the present invention disclosed, which are
within the scope and sprit of the invention as defined by appended
claims.
[0024] For instance, it is possible to apply the embodiment of the
present invention which incorporates a potential well formed under
a gate of a charge transfer transistor to a row shared photo site
pixel including a plurality of photodiodes connected to a FD node
in parallel, and a plurality of gates of a charge transfer
transistor which control a charge transfer from the photodiodes
corresponding to transfer signals to the single FD node.
[0025] According to the embodiments of the present invention, a
CMOS sensor array having a high charge capacity, a high dynamic
range (DR), a large signal to noise ratio (SNR), and a small sized
pixel can be fabricated.
[0026] While the present invention has been described with respect
to the specific embodiments, it will be apparent to those skilled
in the art that various changes and modifications may be made
without departing from the spirit and scope of the invention as
defined in the following claim.
* * * * *