U.S. patent application number 13/328524 was filed with the patent office on 2012-07-12 for deposition source and organic layer deposition apparatus including the same.
Invention is credited to Young-Mook CHOI, Hee-Cheol Kang, Chae-Woong Kim, Mu-Hyun Kim, Dong-Kyu Lee.
Application Number | 20120174865 13/328524 |
Document ID | / |
Family ID | 45509270 |
Filed Date | 2012-07-12 |
United States Patent
Application |
20120174865 |
Kind Code |
A1 |
CHOI; Young-Mook ; et
al. |
July 12, 2012 |
DEPOSITION SOURCE AND ORGANIC LAYER DEPOSITION APPARATUS INCLUDING
THE SAME
Abstract
A deposition source and an organic layer deposition apparatus
that may be simply applied to the manufacture of large-sized
display apparatuses on a mass scale and may prevent or
substantially prevent deposition source nozzles from being blocked
during deposition of a deposition material, thereby improving
manufacturing yield and deposition efficiency. A deposition source
includes a first deposition source including a plurality of first
deposition source nozzles, and a second deposition source including
a plurality of second deposition source nozzles wherein the
plurality of first deposition source nozzles and the plurality of
second deposition source nozzles are tilted toward each other.
Inventors: |
CHOI; Young-Mook;
(Yongin-city, KR) ; Kang; Hee-Cheol; (Yongin-city,
KR) ; Kim; Chae-Woong; (Yongin-city, KR) ;
Kim; Mu-Hyun; (Yongin-city, KR) ; Lee; Dong-Kyu;
(Yongin-city, KR) |
Family ID: |
45509270 |
Appl. No.: |
13/328524 |
Filed: |
December 16, 2011 |
Current U.S.
Class: |
118/720 ;
118/715 |
Current CPC
Class: |
C23C 14/12 20130101;
H01L 51/0004 20130101; H01L 51/56 20130101; C23C 14/243
20130101 |
Class at
Publication: |
118/720 ;
118/715 |
International
Class: |
C23C 16/455 20060101
C23C016/455; C23C 16/04 20060101 C23C016/04 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 12, 2011 |
KR |
10-2011-0003155 |
Claims
1. A deposition source comprising: a first deposition source and a
second deposition source arranged along a first direction; a first
deposition source nozzle unit at a side of the first deposition
source and comprising a plurality of first deposition source
nozzles arranged in the first direction; a second deposition source
nozzle unit at a side of the second deposition source and
comprising a plurality of second deposition source nozzles arranged
in the first direction; a pair of first protruding reflectors
arranged at opposite sides of the plurality of first deposition
source nozzles, wherein the plurality of first deposition source
nozzles are between the first protruding reflectors; and a pair of
second protruding reflectors arranged at opposite sides of the
plurality of second deposition source nozzles, wherein the
plurality of second deposition source nozzles are between the
second protruding reflectors, wherein the plurality of first
deposition source nozzles and the plurality of second deposition
source nozzles are tilted toward each other.
2. The deposition source of claim 1, wherein a host material is
discharged from the first deposition source and a dopant material
is discharged from the second deposition source.
3. The deposition source of claim 1, further comprising a third
protruding reflector connecting one end of one of the first
protruding reflectors and one end of the other of the first
protruding reflectors.
4. The deposition source of claim 3, wherein the one end of the one
of the first protruding reflectors and the one end of the other of
the first protruding reflectors are adjacent to the second
deposition source.
5. The deposition source of claim 1, further comprising a fourth
protruding reflector connecting one end of one of the second
protruding reflectors and one end of the other of the second
protruding reflectors.
6. The deposition source of claim 5, wherein the one end of the one
of the second protruding reflectors and the one end of the other of
the second protruding reflectors are adjacent to the first
deposition source.
7. The deposition source of claim 1, wherein heights of the first
protruding reflectors are greater than or equal to heights of the
first deposition source nozzles.
8. The deposition source of claim 1, wherein heights of the second
protruding reflectors are greater than or equal to heights of the
second deposition source nozzles.
9. The deposition source of claim 1, wherein a deposition source
nozzle closest to the second deposition source from among the
plurality of first deposition source nozzles is a dummy nozzle and
does not have an aperture therein, such that a deposition material
contained in the first deposition source is not dischargeable
through the dummy nozzle.
10. The deposition source of claim 1, wherein a deposition source
nozzle closest to the first deposition source from among the
plurality of second deposition source nozzles is a dummy nozzle and
does not have an aperture therein, such that a deposition material
contained in the second deposition source is not dischargeable
through the dummy nozzle.
11. An organic layer deposition apparatus for forming a thin film
on a substrate, the apparatus comprising: a deposition source for
discharging a deposition material; a deposition source nozzle unit
at a side of the deposition source and comprising a plurality of
deposition source nozzles arranged in a first direction; and a
patterning slit sheet opposite the deposition source nozzle unit
and having a plurality of patterning slits arranged in a second
direction perpendicular to the first direction, wherein the
substrate is movable relative to the organic layer deposition
apparatus in the first direction for performing deposition, wherein
the deposition source comprises a first deposition source and a
second deposition source for discharging different materials, and
wherein the deposition source nozzle unit comprises: a first
deposition source nozzle unit at a side of the first deposition
source and comprising a plurality of first deposition source
nozzles arranged in the first direction; and a second deposition
source nozzle unit at a side of the second deposition source and
comprising a plurality of second deposition source nozzles arranged
in the first direction, wherein the plurality of first deposition
source nozzles and the plurality of second deposition source
nozzles are tilted at a predetermined angle.
12. The apparatus of claim 11, wherein a host material is
discharged from the first deposition source, and a dopant material
is discharged from the second deposition source.
13. The apparatus of claim 11, wherein the first and second
deposition sources are arranged along the first direction.
14. The apparatus of claim 11, wherein the first deposition source
nozzle unit further comprises a first protruding reflector and a
second protruding reflector arranged at opposite sides of the
plurality of first deposition source nozzles, wherein the plurality
of first deposition source nozzles are between the first and second
protruding reflectors.
15. The apparatus of claim 14, further comprising a third
protruding reflector connecting one end of the first protruding
reflector and one end of the second protruding reflector.
16. The apparatus of claim 15, wherein the one end of the first
protruding reflector and the one end of the second protruding
reflector are adjacent to the second deposition source.
17. The apparatus of claim 14, wherein heights of the first and
second protruding reflectors are greater than or equal to heights
of the first deposition source nozzles.
18. The apparatus of claim 14, wherein a deposition source nozzle
closest to the second deposition source from among the plurality of
first deposition source nozzles is a dummy nozzle and does not have
an aperture therein, such that a deposition material contained in
the first deposition source is not dischargeable through the dummy
nozzle.
19. The apparatus of claim 11, wherein the second deposition source
nozzle unit further comprises a fourth protruding reflector and a
fifth protruding reflector arranged at opposite sides of the
plurality of second deposition source nozzles, wherein the
plurality of second deposition source nozzles are between the
fourth and fifth protruding reflectors.
20. The apparatus of claim 19, further comprising a sixth
protruding reflector connecting one end of the fourth protruding
reflector and one end of the fifth protruding reflector.
21. The apparatus of claim 20, wherein the one end of the fourth
protruding reflector and the one end of the fifth protruding
reflector are adjacent to the first deposition source.
22. The apparatus of claim 19, wherein heights of the fourth and
fifth protruding reflectors are greater than or equal to heights of
the second deposition source nozzles.
23. The apparatus of claim 19, wherein a deposition source nozzle
closest to the first deposition source from among the plurality of
second deposition source nozzles is a dummy nozzle and does not
have an aperture therein, such that a deposition material contained
in the second deposition source is not dischargeable through the
dummy nozzle.
24. The apparatus of claim 11, wherein the deposition source, the
deposition source nozzle unit, and the patterning slit sheet are
formed as one body.
25. The apparatus of claim 11, further comprising at least one
connection member connected between the deposition source nozzle
unit and the patterning slit sheet, the at least one connection
member being configured to guide movement of the deposition
material.
26. The apparatus of claim 25, wherein the at least one connection
member is formed to seal a space between the deposition source, the
deposition source nozzle unit, and the patterning slit sheet.
27. The apparatus of claim 11, wherein the apparatus is spaced
apart from the substrate by a distance.
28. The apparatus of claim 11, wherein the deposition material is
continuously deposited on the substrate while the substrate is
moved relative to the apparatus in the first direction.
29. The apparatus of claim 11, wherein the patterning slit sheet is
smaller than the substrate.
30. The apparatus of claim 11, wherein at least one portion of a
host material discharged from the first deposition source is mixed
with at least one portion of a dopant material discharged from the
second deposition source.
31. The apparatus of claim 11, wherein the first and second
deposition sources are arranged in the first direction to be
parallel with each other.
32. The apparatus of claim 11, wherein the plurality of first
deposition source nozzles and the plurality of second deposition
source nozzles are tilted to face each other.
33. The apparatus of claim 11, wherein the plurality of first
deposition source nozzles and the plurality of second deposition
source nozzles are tilted in such a manner that a mixture ratio of
a host material discharged from the first deposition source and a
dopant material discharged from the second deposition source is
maintained constant throughout the entire substrate.
34. The apparatus of claim 11, wherein the first and second
deposition sources are linear deposition sources.
35. The organic layer deposition apparatus of claim 11, wherein
lower end portions of deposition source nozzles of at least one of
the plurality of first deposition source nozzles or the plurality
of second deposition source nozzles have a curved surface.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of Korean Patent
Application No. 10-2011-0003155, filed on Jan. 12, 2011 in the
Korean Intellectual Property Office, the disclosure of which is
incorporated herein in its entirety by reference.
BACKGROUND
[0002] 1. Field
[0003] Aspects of embodiments of the present invention relate to a
deposition source and an organic layer deposition apparatus, and
more particularly, to a deposition source and an organic layer
deposition apparatus that can be simply applied to produce
large-sized display apparatuses on a mass scale and that can
prevent or substantially prevent deposition source nozzles from
being blocked during a deposition process.
[0004] 2. Description of the Related Art
[0005] Organic light-emitting display apparatuses have a larger
viewing angle, better contrast characteristics, and a faster
response rate than other display apparatuses, and thus have drawn
attention as next-generation display apparatuses.
[0006] Organic light-emitting display apparatuses generally have a
stacked structure including an anode, a cathode, and an emission
layer interposed between the anode and the cathode. The apparatuses
display images in color when holes and electrons, injected
respectively from the anode and the cathode, recombine in the
emission layer and thus light is emitted.
[0007] It is difficult to achieve high light-emission efficiency
with such a structure, and thus intermediate layers, including an
electron injection layer, an electron transport layer, a hole
transport layer, a hole injection layer, or the like, are
optionally additionally interposed between the emission layer and
each of the electrodes.
[0008] Also, it is practically very difficult to form fine patterns
in organic thin films such as the emission layer and the
intermediate layers, and red, green, and blue light-emission
efficiency varies according to the organic thin films. For these
reasons, it is not easy to form an organic thin film pattern on a
large substrate, such as a mother glass having a size of 5G or
more, by using a conventional organic layer deposition apparatus,
and thus it is difficult to manufacture large organic
light-emitting display apparatuses having satisfactory driving
voltage, current density, brightness, color purity, light-emission
efficiency, and life-span characteristics. Thus, there is a demand
for improvement in this regard.
SUMMARY
[0009] According to aspects of embodiments of the present
invention, a deposition source and an organic layer deposition
apparatus may be easily manufactured, may be simply applied to
manufacture large-sized display apparatuses on a mass scale, and
may prevent or substantially prevent deposition source nozzles from
being blocked during a deposition process.
[0010] According to an embodiment of the present invention, a
deposition source includes a first deposition source and a second
deposition source arranged along a first direction; a first
deposition source nozzle unit at a side of the first deposition
source and including a plurality of first deposition source nozzles
arranged in the first direction; a second deposition source nozzle
unit at a side of the second deposition source and comprising a
plurality of second deposition source nozzles arranged in the first
direction; a pair of first protruding reflectors arranged at
opposite sides of the plurality of first deposition source nozzles,
wherein the plurality of first deposition source nozzles are
between the first protruding reflectors; and a pair of second
protruding reflectors arranged at opposite sides of the plurality
of second deposition source nozzles, wherein the plurality of
second deposition source nozzles are between the second protruding
reflectors, wherein the plurality of first deposition source
nozzles and the plurality of second deposition source nozzles are
tilted toward each other.
[0011] A host material may be discharged from the first deposition
source and a dopant material may be discharged from the second
deposition source.
[0012] The deposition source may further include a third protruding
reflector connecting one end of one of the first protruding
reflectors and one end of the other of the first protruding
reflectors.
[0013] The one end of the one of the first protruding reflectors
and the one end of the other of the first protruding reflectors may
be adjacent to the second deposition source.
[0014] The deposition source may further include a fourth
protruding reflector connecting one end of one of the second
protruding reflectors and one end of the other of the second
protruding reflectors.
[0015] The one end of the one of the second protruding reflectors
and the one end of the other of the second protruding reflectors
may be adjacent to the first deposition source.
[0016] Heights of the first protruding reflectors may be greater
than or equal to heights of the first deposition source
nozzles.
[0017] Heights of the second protruding reflectors may be greater
than or equal to heights of the second deposition source
nozzles.
[0018] In one embodiment, a deposition source nozzle closest to the
second deposition source from among the plurality of first
deposition source nozzles is a dummy nozzle and does not have an
aperture therein, such that a deposition material contained in the
first deposition source is not dischargeable through the dummy
nozzle.
[0019] In one embodiment, a deposition source nozzle closest to the
first deposition source from among the plurality of second
deposition source nozzles is a dummy nozzle and does not have an
aperture therein, such that a deposition material contained in the
second deposition source is not dischargeable through the dummy
nozzle.
[0020] According to another embodiment of the present invention, an
organic layer deposition apparatus for forming a thin film on a
substrate includes a deposition source for discharging a deposition
material; a deposition source nozzle unit at a side of the
deposition source and including a plurality of deposition source
nozzles arranged in a first direction; and a patterning slit sheet
opposite the deposition source nozzle unit and having a plurality
of patterning slits arranged in a second direction perpendicular to
the first direction. The substrate is movable relative to the
organic layer deposition apparatus in the first direction for
performing deposition. The deposition source includes a first
deposition source and a second deposition source for discharging
different materials. The deposition source nozzle unit includes a
first deposition source nozzle unit at a side of the first
deposition source and including a plurality of first deposition
source nozzles arranged in the first direction; and a second
deposition source nozzle unit at a side of the second deposition
source and including a plurality of second deposition source
nozzles arranged in the first direction. The plurality of first
deposition source nozzles and the plurality of second deposition
source nozzles are tilted at a predetermined angle.
[0021] A host material may be discharged from the first deposition
source, and a dopant material may be discharged from the second
deposition source.
[0022] The first and second deposition sources may be arranged
along the first direction.
[0023] The first deposition source nozzle unit may further include
a first protruding reflector and a second protruding reflector
arranged at opposite sides of the plurality of first deposition
source nozzles, wherein the plurality of first deposition source
nozzles are between the first and second protruding reflectors.
[0024] The organic layer deposition apparatus may further include a
third protruding reflector connecting one end of the first
protruding reflector and one end of the second protruding
reflector.
[0025] The one end of the first protruding reflector and the one
end of the second protruding reflector may be adjacent to the
second deposition source.
[0026] Heights of the first and second protruding reflectors may be
greater than or equal to heights of the first deposition source
nozzles.
[0027] In one embodiment, a deposition source nozzle closest to the
second deposition source from among the plurality of first
deposition source nozzles is a dummy nozzle and does not include an
aperture therein, such that a deposition material contained in the
first deposition source is not dischargeable through the dummy
nozzle.
[0028] The second deposition source nozzle unit may further include
a fourth protruding reflector and a fifth protruding reflector
arranged at opposite sides of the plurality of second deposition
source nozzles, wherein the plurality of second deposition source
nozzles are between the fourth and fifth protruding reflectors.
[0029] The organic layer deposition apparatus may further include a
sixth protruding reflector connecting one end of the fourth
protruding reflector and one end of the fifth protruding
reflector.
[0030] The one end of the fourth protruding reflector and the one
end of the fifth protruding reflector may be adjacent to the first
deposition source.
[0031] Heights of the fourth and fifth protruding reflectors may be
greater than or equal to heights of the second deposition source
nozzles.
[0032] In one embodiment, a deposition source nozzle closest to the
first deposition source from among the plurality of second
deposition source nozzles is a dummy nozzle and does not include an
aperture therein, such that a deposition material contained in the
second deposition source is not dischargeable through the dummy
nozzle.
[0033] The deposition source, the deposition source nozzle unit,
and the patterning slit sheet may be formed as one body, such as by
being connected to each other via connection members.
[0034] The apparatus may further include at least one connection
member connected between the deposition source nozzle unit and the
patterning slit sheet, the at least one connection member being
configured to guide movement of the deposition material.
[0035] The at least one connection member may be formed to seal a
space between the deposition source, the deposition source nozzle
unit, and the patterning slit sheet.
[0036] The organic layer deposition apparatus may be spaced apart
from the substrate by a distance.
[0037] The deposition material may be continuously deposited on the
substrate while the substrate is moved relative to the organic
layer deposition apparatus in the first direction.
[0038] The patterning slit sheet may be smaller than the
substrate.
[0039] At least one portion of a host material discharged from the
first deposition source may be mixed with at least one portion of a
dopant material discharged from the second deposition source.
[0040] The first and second deposition sources may be arranged in
the first direction to be parallel with each other.
[0041] The plurality of first deposition source nozzles and the
plurality of second deposition source nozzles may be tilted to face
each other.
[0042] The plurality of first deposition source nozzles and the
plurality of second deposition source nozzles may be tilted in such
a manner that a mixture ratio of a host material discharged from
the first deposition source and a dopant material discharged from
the second deposition source is maintained constant throughout the
entire substrate.
[0043] The first and second deposition sources may be linear
deposition sources.
[0044] Lower end portions of deposition source nozzles of at least
one of the plurality of first deposition source nozzles or the
plurality of second deposition source nozzles may have a curved
surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0045] The above and other features of the present invention will
become more apparent by describing in detail some exemplary
embodiments thereof with reference to the attached drawings in
which:
[0046] FIG. 1 is a schematic perspective view of a deposition
source according to an embodiment of the present invention;
[0047] FIG. 2A is a cross-sectional view of the deposition source
of FIG. 1, taken along the line I-I;
[0048] FIG. 2B is a cross-sectional view of the deposition source
of FIG. 1, taken along the line II-II;
[0049] FIG. 2C is a cross-sectional view of a modified example of
the deposition source of FIG. 1;
[0050] FIG. 2D is a photograph showing a lower part of a deposition
source nozzle, at which a deposition material is deposited;
[0051] FIG. 3 is a schematic perspective view of a deposition
source according to another embodiment of the present
invention;
[0052] FIG. 4 is a schematic perspective view of an organic layer
deposition apparatus according to an embodiment of the present
invention;
[0053] FIG. 5 is a schematic side cross-sectional view of the
organic layer deposition apparatus of FIG. 4;
[0054] FIG. 6 is a schematic front cross-sectional view of the
organic layer deposition apparatus of FIG. 4; and
[0055] FIG. 7 is a cross-sectional view of an active matrix organic
light-emitting display apparatus fabricated by using an organic
layer deposition apparatus, according to an embodiment of the
present invention.
DETAILED DESCRIPTION
[0056] Some exemplary embodiments of the present invention will be
described more fully hereinafter with reference to the accompanying
drawings; however, embodiments of the present invention may be
embodied in different forms and should not be construed as limited
to the exemplary embodiments illustrated and set forth herein.
Rather, these exemplary embodiments are provided by way of example
for understanding of the invention and to convey the scope of the
invention to those skilled in the art. As those skilled in the art
would realize, the described embodiments may be modified in various
ways, all without departing from the spirit or scope of the present
invention.
[0057] An organic light-emitting display apparatus includes
intermediate layers, including an emission layer disposed between a
first electrode and a second electrode that are arranged opposite
to each other. The electrodes and the intermediate layers may be
formed by using various methods, one of which is a deposition
method. When an organic light-emitting display apparatus is
manufactured by using the deposition method, a fine metal mask
(FMM) having the same pattern as a thin film to be formed is
disposed to closely contact a substrate, and a thin film material
is deposited over the FMM in order to form the thin film having the
desired pattern.
[0058] FIG. 1 is a schematic perspective view of a deposition
source 10 according to an embodiment of the present invention. FIG.
2A is a cross-sectional view taken along the line I-I of FIG. 1.
FIG. 2B is a cross-sectional view taken along the line II-II of
FIG. 1.
[0059] Referring to FIGS. 1 to 2B, the deposition source 10
according to one embodiment may include a first deposition source
110 and a second deposition source 120. A thin film is formed on a
deposition target (e.g., a substrate 400, as illustrated in FIG. 4)
by vaporizing a first deposition material 117a and a second
deposition material 117b in the first deposition source 110 and the
second deposition source 120, respectively. The first and second
deposition sources 110 and 120 may be linear deposition
sources.
[0060] Specifically, the first deposition source 110 may contain a
host material as the first deposition material 117a, and the second
deposition source 120 may contain a dopant material as the second
deposition material 117b. Alternatively, the first deposition
source 110 may contain a dopant material as the first deposition
material 117a, and the second deposition source 120 may contain a
host material as the second deposition material 117b. Since the
host material and the dopant material are vaporized at different
temperatures, the first and second deposition sources 110 and 120
and first and second deposition source nozzle units 130 and 140 are
provided to deposit the host material and the dopant material at
the same time.
[0061] Specifically, the first deposition source 110 includes a
crucible 111 filled with the first deposition material 117a, and a
heater 112 that heats the crucible 111 to vaporize the first
deposition material 117a toward a side of the crucible 111, and in
particular, toward the substrate 400. The second deposition source
120 includes a crucible 121 filled with the second deposition
material 117b, and a heater 122 that heats the crucible 121 to
vaporize the second deposition material 117b toward a side of the
crucible 121, and in particular, toward the substrate 400.
[0062] Examples of the host material may include
tris(8-hydroxy-quinolinato)aluminum (Alq3),
9,10-di(naphth-2-yl)anthracene (AND),
3-tert-butyl-9,10-di(naphth-2-yl)anthracene (TBADN),
4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-dimethylphenyl (DPVBi),
4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-dimethylphenyl (p-DMDPVBi),
tert(9,9-diarylfluorene)s (TDAF),
2-(9,9'-spirobifluorene-2-yl)-9,9'-spirobifluorene(BSDF),
2,7-bis(9,9'-spirobifluorene-2-yl)-9,9'-spirobifluorene (TSDF),
bis(9,9-diarylfluorene)s (BDAF),
4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-di-(tert-butyl)phenyl
(p-TDPVBi), 1,3-bis(carbazol-9-yl)benzene (mCP),
1,3,5-tris(carbazol-9-yl)benzene (tCP),
4,4',4''-tris(carbazol-9-yl)triphenylamine (TcTa),
4,4'-bis(carbazol-9-yl)biphenyl (CBP),
4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CBDP),
4,4'-bis(carbazol-9-yl)-9,9-dimethyl-fluorene (DMFL-CBP),
4,4'-bis(carbazol-9-yl)-9,9-bis(9-phenyl-9H-carbazol)fluorene
(FL-4CBP), 4,4'-bis(carbazol-9-yl)-9,9-di-tolyl-fluorene
(DPFL-CBP), 9,9-bis(9-phenyl-9H-carbazol)fluorene (FL-2CBP), and
the like.
[0063] Examples of the dopant material may include
4,4'-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi),
9,10-di(naph-2-tyl)anthracene (ADN),
3-tert-butyl-9,10-di(naph-2-yl)anthracene (TBADN), and the
like.
[0064] The first and second deposition source nozzle units 130 and
140 are disposed at a side of the first deposition source 110 and a
side of the second deposition source 120, respectively, and
particularly, at a side of the first deposition source 110 and a
side of the second deposition source 120 that face the substrate
400. A plurality of first deposition source nozzles 113 are formed
in the first deposition source nozzle unit 130 and a plurality of
second deposition source nozzles 123 are formed in the second
deposition source nozzle unit 140, in a moving direction (scanning
direction) A in which the substrate 400 is moved. The plurality of
first and second deposition source nozzles 113 and 123 may be
arranged at equal intervals. The first deposition material 117a and
the second deposition material 117b, which are vaporized in the
first and second deposition sources 110 and 120, pass through the
first deposition source nozzle unit 130 and the second deposition
source nozzle unit 140, respectively, and then move toward the
substrate 400.
[0065] Since the plurality of first and second deposition source
nozzles 113 and 123 are arranged in the scanning direction A, even
if there is a difference in flux between the pluralities of first
and second deposition source nozzles 113 and 123, the difference
may be compensated for and deposition uniformity may be maintained
constant.
[0066] The pluralities of first and second deposition source nozzle
units 113 and 123 formed in the first and second deposition nozzle
units 130 and 140 may be tilted at a predetermined angle. In one
embodiment, the plurality of first deposition source nozzles 113
and the plurality of second deposition source nozzles 123 may be
tilted to face each other.
[0067] Although the amount of the second deposition material 117b
contained may vary depending on a thin film forming material, the
second deposition material 117b contained may be about 3 to about
20 parts by weight in the thin film forming material (total weight
of the host and dopant materials 117a and 117b) of 100 parts by
weight. If the second deposition material 117b content exceeds the
above described range, the light-emitting property of an organic
light-emitting display apparatus may be degraded. If the first and
second deposition source nozzles 113 and 123 are not tilted and are
arranged in parallel with the substrate 400, then the second
deposition material 117b is deposited on the substrate 400 at an
initial stage of a deposition process, the second deposition
material 117b and the first deposition material 117a are
alternately deposited on the substrate 400 during a middle stage of
the deposition process, and the first deposition material 117a is
deposited on the substrate 400 during a final stage of the
deposition process. That is, a mixture ratio of the first
deposition material 117a and the second deposition material 117b
may vary depending on regions of the substrate 400.
[0068] Thus, in one embodiment, the pluralities of first and second
deposition source nozzles 113 and 123 are tilted at a predetermined
angle. The first deposition source nozzles 113 of the first
deposition source nozzle unit 130 and the second deposition source
nozzles 123 of the second deposition source nozzle unit 140 may be
tilted to face each other. That is, the first deposition source
nozzles 113 of the first deposition source nozzle unit 130 may be
tilted to face the second deposition source 120, and the second
deposition source nozzles 123 of the second deposition source
nozzle unit 140 may be tilted to face the first deposition source
110.
[0069] In the above-described structure, the mixing ratio of the
first deposition material 117a and the second deposition material
117b may be maintained constant throughout the entire substrate
400. If a thin film is formed by using a mixture in which the first
deposition material 117a and the second deposition material 117b
are mixed at a constant mixture ratio, the thin film may exhibit
improved characteristics in view of color coordinates, optical
efficiency, driving voltage, and life span.
[0070] The first deposition source nozzle unit 130 may include
reflectors 114, 114a, 114b, and 114c and a cooling plate 116, and
the second deposition source nozzle unit 140 may include reflectors
124, 124a, 124b, and 124c and a cooling plate 126.
[0071] Specifically, the first deposition source nozzle unit 130
may include the upper reflector 114, the first protruding reflector
114a, the second protruding reflector 114b, the third protruding
reflector 114c, and the cooling plate 116. The upper reflector 114
may be disposed on the first deposition source 110 and the heater
112. The upper reflector 114 may prevent or substantially prevent
heat generated by the heater 112 from being emitted to the outside.
The first and second protruding reflectors 114a and 114b, in one
embodiment, extend from ends of the upper reflector 114 and toward
a patterning slit sheet 150. The first and second protruding
reflectors 114a and 114b, in one embodiment, are disposed apart
from each other by a predetermined distance to be parallel with the
plurality of first deposition source nozzles 113. The plurality of
first deposition source nozzles 113 are arranged between the first
and second protruding reflectors 114a and 114b. The third
protruding reflector 114c, in one embodiment, extends from one end
of the first protruding reflector 114a and one end of the second
protruding reflector 114b to connect the first and second
protruding reflectors 114a and 114b. In one embodiment, the third
protruding reflector 114c is formed to connect one end of the first
protruding reflector 114a and one end of the second protruding
reflector 114b, which are adjacent to the second deposition source
120. The heights of the first to third protruding reflectors 114a,
114b, and 114c may be equal to or greater than those of the
plurality of first deposition source nozzles 113.
[0072] Some of the first deposition material 117a discharged from
the plurality of first deposition source nozzles 113 may flow to
the cooling plate 116. The first deposition material 117a flowing
to the cooling plate 116 is hardened, and the longer a deposition
process is, the more first deposition material 117a may be hardened
on the cooling plate 116 and may block the plurality of first
deposition source nozzles 113. According to an embodiment of the
present invention, the plurality of first deposition source nozzles
113 are tilted toward the plurality of second deposition source
nozzles 123. However, in an embodiment of the present invention,
since the first to third protruding reflectors 114a to 114c
surround the plurality of first deposition source nozzles 113, the
plurality of first deposition source nozzles 113 are prevented or
substantially prevented from being blocked by the first deposition
material 117a that hardens and grows on the cooling plate 116.
[0073] The second deposition source nozzle unit 140 may include the
upper reflector 124, the fourth protruding reflector 124a, the
fifth protruding reflector 124b, the sixth protruding reflector
124c, and the cooling plate 126. The upper reflector 124 is
disposed on the second deposition source 120 and the heater 122.
The upper reflector 124 may prevent or substantially prevent heat
generated by the heater 122 from being emitted to the outside. The
fourth and fifth protruding reflectors 124a and 124b, in one
embodiment, extend from one end of the upper reflector 124 and
toward the patterning slit sheet 150. The fourth and fifth
protruding reflectors 124a and 124b, in one embodiment, are
disposed apart from each other by a predetermined distance to be
parallel with the plurality of second deposition source nozzles
123. The plurality of second deposition source nozzles 123 are
arranged between the fourth and fifth protruding reflectors 124a
and 124b. The sixth protruding reflector 124c, in one embodiment,
extends from one end of the fourth protruding reflector 124a and
one end of the fifth protruding reflector 124b to connect the
fourth and fifth protruding reflectors 124a and 124b. In
particular, the sixth protruding reflector 124c is formed to
connect one end of the fourth protruding reflector 124a and one end
of the fifth protruding reflector 124b which are adjacent to the
first deposition source 110. The heights of the fourth to sixth
protruding reflectors 124a, 124b, and 124c may be equal to or
greater than those of the plurality of second deposition source
nozzles 123.
[0074] Some of the second deposition material 117b discharged from
the plurality of second deposition source nozzles 123 may flow to
the cooling plate 126. The second deposition material 117b flowing
to the cooling plate 126 is hardened, and the longer a deposition
process is, the more second deposition material 117b may be
hardened on the cooling plate 126 and may block the plurality of
second deposition source nozzles 123. According to an embodiment of
the present invention, the plurality of second deposition source
nozzles 123 are tilted toward the plurality of first deposition
source nozzles 113. However, in an embodiment of the present
invention, since the fourth to sixth protruding reflectors 124a to
124c surround the plurality of second deposition source nozzles
123, the plurality of second deposition source nozzles 123 are
prevented or substantially prevented from being blocked by the
second deposition material 117b that hardens and grows on the
cooling plate 126.
[0075] FIG. 2C is a cross-sectional view of a modified example of
the deposition source of FIG. 1. FIG. 2D is a photograph showing a
lower part of a deposition source nozzle 123'' in which a
deposition material is deposited.
[0076] Referring to FIG. 2C, lower end portions of a second
deposition source nozzle 123' each have a curved surface 123'a. In
other words, in the second deposition source nozzle 123', the lower
end portions each formed by an external side surface 123'c and an
internal side surface 123'b have the curved surface 123'a, unlike
the second deposition source nozzle 123 shown in FIG. 2B. Also,
although not shown, lower end portions of a first deposition source
nozzle may each have a curved surface.
[0077] In contrast, referring to FIG. 2D, lower end portions of the
second deposition source nozzle 123'' each have a corner, unlike
the lower end portions of the second deposition source nozzle 123'
each having the curved surface 123'a. Thus, as a deposition
material 117' is discharged via the second deposition source nozzle
123'', the deposition material 117' is continuously deposited at
the lower end portions having the corners of the second deposition
source nozzle 123''. Thus, the lower end portions of the second
deposition source nozzle 123'' may be blocked by the deposition
material 117'.
[0078] FIG. 3 is a schematic perspective view of a deposition
source 20 according to another embodiment of the present invention.
The deposition source 20 of FIG. 3 is the same as the deposition
source 10 of FIG. 1 in that a first protruding reflector 114a and a
second protruding reflector 114b are disposed at both sides of
first deposition source nozzles 113 of a first deposition source
nozzle unit 230, and a fourth protruding reflector 124a and a fifth
protruding reflector 124b are disposed at both sides of second
deposition source nozzles 123 of a second deposition source nozzle
unit 240, but is different from the deposition source 10 in that a
first dummy nozzle 113a and a second dummy nozzle 123a are formed
in the first and second deposition source nozzle units 230 and 240,
respectively, instead of the third and sixth protruding reflectors
114c and 124c included in the deposition source 10.
[0079] The first and second protruding reflectors 114a and 114b, in
one embodiment, are disposed apart from each other by a
predetermined distance to be parallel with the plurality of first
deposition source nozzles 113. The plurality of first deposition
source nozzles 113 are arranged between the first and second
protruding reflectors 114a and 114b. The heights of the first and
second protruding reflectors 114a and 114b may be equal to or
greater than those of the plurality of first deposition source
nozzles 113.
[0080] The first dummy nozzle 113a, in one embodiment, is closest
to the second deposition source 120 from among the plurality of
first deposition source nozzles 113, and has no aperture therein.
Since the first dummy nozzle 113a has no aperture, a deposition
material contained in a first deposition source 110 is not
discharged via the first dummy nozzle 113a. A first deposition
source nozzle from among the plurality of first deposition source
nozzles 113 of the deposition source 10 of FIG. 1 is most likely to
be blocked by a deposition material, but in the deposition source
20 of FIG. 3, a first deposition source nozzle from among the
plurality of first deposition source nozzles 113 is the first dummy
nozzle 113a and, therefore, is not blocked by a deposition
material.
[0081] The fourth and fifth protruding reflectors 124a and 124b, in
one embodiment, are disposed apart from each other by a
predetermined distance to be parallel with the plurality of second
deposition source nozzles 123. The plurality of second deposition
source nozzles 123 are arranged between the fourth and fifth
protruding reflectors 124a and 124b. The heights of the fourth and
fifth protruding reflectors 124a and 124b may be equal to or
greater than those of the plurality of second deposition source
nozzles 123.
[0082] The second dummy nozzle 123a, in one embodiment, is closest
to the first deposition source 110 from among the plurality of
second deposition source nozzles 123, and has no aperture therein.
Since the second dummy nozzle 123a has no aperture, a deposition
material contained in a second deposition source 120 is not
discharged via the second dummy nozzle 123a. A first deposition
source nozzle from among the plurality of second deposition source
nozzles 123 of the deposition source 10 of FIG. 1 is most likely to
be blocked by a deposition material, but in the deposition source
20 of FIG. 3, a first deposition source nozzle from among the
plurality of second deposition source nozzles 123 is the second
dummy nozzle 123a and, therefore, is not blocked by a deposition
material.
[0083] FIG. 4 is a schematic perspective view of an organic layer
deposition apparatus 100 according to an embodiment of the present
invention. FIG. 5 is a schematic side cross-sectional view of the
organic layer deposition apparatus 100 of
[0084] FIG. 4. FIG. 6 is a schematic front cross-sectional view of
the organic layer deposition apparatus 100 of FIG. 4.
[0085] Referring to FIGS. 4 to 6, the organic layer deposition
apparatus 100 according to one embodiment includes the first
deposition source 110, the second deposition source 120, the first
deposition source nozzle unit 130, the second deposition source
nozzle unit 140, and the patterning slit sheet 150.
[0086] Although a chamber is not illustrated in FIGS. 4 to 6 for
reasons of clarity, all the components of the organic layer
deposition apparatus 100 may be disposed within a chamber that is
maintained at an appropriate degree of vacuum. The chamber may be
maintained at an appropriate vacuum in order to allow the first and
second deposition materials 117a and 117b to move in a
substantially straight line through the organic layer deposition
apparatus 100.
[0087] In particular, in order to deposit the first and second
deposition materials 117a and 117b that are emitted from the first
and second deposition sources 110 and 120 and are discharged
through the first and second deposition source nozzle units 130 and
140 and the patterning slit sheet 150 onto a substrate 400 in a
desired pattern, it is required to maintain the chamber in a
high-vacuum state as in a deposition method using a fine metal mask
(FMM). In addition, the temperature of the patterning slit sheet
150 should be sufficiently lower than the temperatures of the first
and second deposition sources 110 and 120. In one embodiment, the
temperature of the patterning slit sheet 150 may be about
100.degree. C. or less. The temperature of the patterning slit
sheet 150 should be sufficiently low so as to reduce thermal
expansion of the patterning slit sheet 150.
[0088] The substrate 400, which is a deposition target substrate,
is disposed in the chamber. The substrate 400 may be a substrate
for flat panel displays. A large substrate, such as a mother glass
for manufacturing a plurality of flat panel displays, may be used
as the substrate 400. Other types of substrates may also be
employed.
[0089] In one embodiment, deposition is performed while the
substrate 400 is moved relative to the organic layer deposition
apparatus 100.
[0090] In particular, in a conventional deposition method using an
FMM, the size of the FMM has to be equal to the size of a
substrate. Thus, the size of the FMM has to be increased as the
substrate becomes larger, and it is neither straightforward to
manufacture a large FMM nor to extend an FMM to be accurately
aligned with a pattern.
[0091] In order to overcome this problem, in the organic layer
deposition apparatus 100 according to an embodiment of the present
invention, deposition may be performed while the organic layer
deposition apparatus 100 or the substrate 400 is moved relative to
the other. In other words, deposition may be continuously performed
while the substrate 400, which is disposed so as to face the
organic layer deposition apparatus 100, is moved (e.g., in a Y-axis
direction). In other words, deposition may be performed in a
scanning manner while the substrate 400 is moved (e.g., in a
direction of arrow A in FIG. 4). Further, although the substrate
400 is illustrated as being moved in the Y-axis direction in FIG. 4
when deposition is performed, embodiments of the present invention
are not limited thereto. For example, in another embodiment,
deposition may be performed while the organic layer deposition
assembly 100 is moved (e.g., in the Y-axis direction), whereas the
substrate 400 is fixed.
[0092] In the organic layer deposition apparatus 100 according to
an embodiment of the present invention, the patterning slit sheet
150 may be significantly smaller than a FMM used in a conventional
deposition method. In other words, in the organic layer deposition
apparatus 100 according to one embodiment, deposition is
continuously performed, i.e. in a scanning manner, while the
substrate 400 is moved in the Y-axis direction. Thus, lengths of
the patterning slit sheet 150 in the X-axis and Y-axis directions
may be significantly less than lengths of the substrate 400 in the
X-axis and Y-axis directions. As described above, since the
patterning slit sheet 150 may be formed to be significantly smaller
than an FMM used in a conventional deposition method, it is
relatively easy to manufacture the patterning slit sheet 150. In
other words, using the patterning slit sheet 150, which is smaller
than the FMM used in the conventional deposition method, is more
convenient in all processes, including etching and other subsequent
processes, such as precise extension, welding, moving, and cleaning
processes, compared to the conventional deposition method using the
larger FMM. This is especially advantageous for manufacturing a
relatively large display apparatus.
[0093] In order to perform deposition while the organic layer
deposition apparatus 100 or the substrate 400 is moved relative to
the other as described above, the organic layer deposition
apparatus 100 and the substrate 400 may be separated from each
other by a predetermined distance. This will be described later in
further detail.
[0094] The first and second deposition sources 110 and 120 that
contain and heat the first and second deposition materials 117a and
117b, respectively, are disposed in an opposite side of the chamber
to a side in which the substrate 400 is disposed. While the first
and second deposition materials 117a and 117b contained in the
first and second deposition sources 110 and 120 are vaporized, the
first and second deposition materials 117a and 117b are deposited
on the substrate 400.
[0095] Specifically, the first deposition source 110 may contain a
host material as the first deposition material 117a, and the second
deposition source 120 may contain a dopant material as the second
deposition material 117b. That is, since the host material and the
dopant material are vaporized at different temperatures, the first
and second deposition sources 110 and 120 and the first and second
deposition source nozzle units 130 and 140 are provided to deposit
the host material and the dopant material at the same time.
[0096] In particular, the first and second deposition sources 110
and 120 that contain and heat the host material and the dopant
material, respectively, are disposed in an opposite side of the
chamber to that in which the substrate 400 is disposed. As the host
material and the dopant material contained in the first and second
deposition sources 110 and 120 are vaporized, the host material and
the dopant material are deposited on the substrate 400. In
particular, the first deposition source 110 includes the crucible
111 that is filled with the host material, and the heater 112 that
heats the crucible 111 to vaporize the host material, which is
contained in the crucible 111, toward a side of the crucible 111,
and in particular, toward the first deposition source nozzle unit
130. The second deposition source 120 includes the crucible 121
that is filled with the dopant material, and the heater 122 that
heats the crucible 121 to vaporize the dopant material, which is
contained in the crucible 121, toward a side of the crucible 121,
and in particular, toward the second deposition nozzle unit
140.
[0097] Examples of the host material may include
tris(8-hydroxy-quinolinato) Aluminum (Alq3),
9,10-di(naphth-2-yl)anthracene (AND),
3-tert-butyl-9,10-di(naphth-2-yl)anthracene (TBADN),
4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-dimethylphenyl (DPVBi),
4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-dimethylphenyl (p-DMDPVBi),
tert(9,9-diarylfluorene)s (TDAF),
2-(9,9'-spirobifluorene-2-yl)-9,9'-spirobifluorene(BSDF),
2,7-bis(9,9-spirobifluorene-2-yl)-9,9'-spirobifluorene (TSDF),
bis(9,9-diarylfluorene)s (BDAF),
4,4'-bis(2,2-diphenyl-ethene-1-yl)-4,4'-di-(tert-butyl)phenyl
(p-TDPVBi), 1,3-bis(carbazol-9-yl)benzene (mCP),
1,3,5-tris(carbazol-9-yl)benzene (tCP),
4,4',4''-tris(carbazol-9-yl)triphenylamine (TcTa),
4,4'-bis(carbazol-9-yl)biphenyl (CBP),
4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CBDP),
4,4'-bis(carbazol-9-yl)-9,9-dimethyl-fluorene (DMFL-CBP),
4,4'-bis(carbazol-9-yl)-9,9-bis(9-phenyl-9H-carbazol)fluorene
(FL-4CBP), 4,4'-bis(carbazol-9-yl)-9,9-di-tolyl-fluorene
(DPFL-CBP), 9,9-bis(9-phenyl-9H-carbazol)fluorene (FL-2CBP), and
the like.
[0098] Examples of the dopant material may include
4,4'-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi),
9,10-di(naph-2-tyl)anthracene (ADN),
3-tert-butyl-9,10-di(naph-2-tyl)panthracene (TBADN), and the
like.
##STR00001##
[0099] As described above, the organic layer deposition apparatus
100 according to one embodiment is characterized in that the first
deposition source 110 that contains the host material and the
second deposition source 120 that contains the dopant material are
provided so that the host material and the dopant material may be
simultaneously deposited on the substrate 400. Since the host
material and the dopant material may be simultaneously deposited on
the substrate 400, the deposition process may be simplified and
performed rapidly, and device efficiency may also be improved.
[0100] The first and second deposition source nozzle units 130 and
140 are disposed at a side of the first deposition source 110 and a
side of the second deposition source 120, respectively, and
particularly, at a side of the first deposition source 110 and a
side of the second deposition source 120 that face the substrate
400. In one embodiment, the plurality of first deposition source
nozzles 113 are formed in the first deposition source nozzle unit
130 and the plurality of second deposition source nozzles 123 are
formed in the second deposition source nozzle unit 140 in the
Y-axis direction, i.e. in a scanning direction of the substrate
400. The plurality of first and second deposition source nozzles
113 and 123 may be arranged at equal intervals. The host material
and the dopant material, which are vaporized in the first and
second deposition sources 110 and 120, respectively, pass through
the first deposition source nozzle unit 130 and the second
deposition source nozzle unit 140, respectively, and then move
toward the substrate 400. As described above, according to one
embodiment, when the plurality of first deposition source nozzles
113 are formed in the first deposition source nozzle unit 130 and
the plurality of second deposition source nozzles 123 are formed in
the second deposition source nozzle unit 140 in the Y-axis
direction, i.e. the scanning direction of the substrate 400, the
size of a pattern formed of the host material or the dopant
material discharged through each of a plurality of patterning slits
151 of the patterning slit sheet 150 is affected by the size of one
of the first and second deposition source nozzles 113 and 123
(since there is only one line of the first and second deposition
source nozzles 113 and 123 in the X-axis direction). Thus, no
shadow zone may be formed on the substrate 400. Since the plurality
of first and second deposition source nozzles 113 and 123 are
arranged in the scanning direction, even if there is a difference
in flux between the plurality of first and second deposition source
nozzles 113 and 123, the difference may be compensated for and
deposition uniformity may be maintained constant.
[0101] The plurality of first and second deposition source nozzle
units 113 and 123 formed in the first and second deposition source
nozzle units 130 and 140 may be tilted at a predetermined angle.
That is, the plurality of first and second deposition source
nozzles 113 and 123 may be tilted at a predetermined angle on a Y-Z
plane.
[0102] Although the second deposition material 117b contained may
vary depending on the material for forming thin films, the second
deposition material 117b contained, in one embodiment, is about 3
to about 20 parts by weight in the thin film forming material
(total weight of the host and dopant materials 117a and 117b) of
100 parts by weight. If the second deposition material 117b content
exceeds the above described range, the light-emitting property of
an organic light-emitting display apparatus may be degraded. If the
first and second deposition source nozzles 113 and 123 are not
tilted and are arranged in parallel with a Z-axis, then the second
deposition material 117b is deposited on the substrate 400 at an
initial stage of a deposition process, the second deposition
material 117b and the first deposition material 117a are
alternately deposited on the substrate 400 during a middle stage of
the deposition process, and the first deposition material 117a is
deposited on the substrate 400 during a final stage of the
deposition process. That is, a mixture ratio of the first
deposition material 117a and the second deposition material 117b
may vary depending on regions of the substrate 400.
[0103] Thus, in one embodiment, the plurality of first and second
deposition source nozzles 113 and 123 are tilted at a predetermined
angle. The plurality of first deposition source nozzles 113 of the
first deposition source nozzle unit 130 and the plurality of second
deposition source nozzles 123 of the second deposition source
nozzle unit 140 may be tilted to face each other. That is, in one
embodiment, the deposition source nozzles 113 of the first
deposition source nozzle unit 130 are tilted to face the second
deposition source 120, and the deposition source nozzles 123 of the
second deposition source nozzle unit 140 are tilted to face the
first deposition source 110.
[0104] In the above described structure, the mixing ratio of the
first deposition material 117a and the second deposition material
117b may be maintained constant throughout the entire substrate
400. If a thin film is formed by using a mixture in which the first
deposition material 117a and the second deposition material 117b
are mixed at a constant mixture ratio, the thin film may exhibit
improved characteristics in view of color coordinates, optical
efficiency, driving voltage, and life span.
[0105] The first deposition source nozzle unit 130 may include the
reflectors 114, 114a, 114b, and 114c and the cooling plate 116, and
the second deposition source nozzle unit 140 may include the
reflectors 124, 124a, 124b, and 124c and the cooling plate 126.
[0106] In one embodiment, the first deposition source nozzle unit
130 includes the upper reflector 114, the first protruding
reflector 114a, the second protruding reflector 114b, the third
protruding reflector 114c, and the cooling plate 116. The upper
reflector 114 is disposed on the first deposition source 110 and
the heater 112. The upper reflector 114 may prevent or
substantially prevent heat generated by the heater 112 from being
emitted to the outside. The first and second protruding reflectors
114a and 114b, in one embodiment, extend from one end of the upper
reflector 114 and toward the patterning slit sheet 150. The first
and second protruding reflectors 114a and 114b, in one embodiment,
are disposed apart from each other by a predetermined distance to
be parallel with the plurality of first deposition source nozzles
113. The plurality of first deposition source nozzles 113 are
arranged between the first and second protruding reflectors 114a
and 114b. The third protruding reflector 114c, in one embodiment,
extends from one end of the first protruding reflector 114a and one
end of the second protruding reflector 114b to connect the first
and second protruding reflectors 114a and 114b. In one embodiment,
the third protruding reflector 114c is formed to connect one end of
the first protruding reflector 114a and one end of the second
protruding reflector 114b, which are adjacent to the second
deposition source 120. The heights of the first to third protruding
reflectors 114a, 114b, and 114c may be equal to or greater than
those of the plurality of first deposition source nozzles 113.
[0107] Some of the first deposition material 117a discharged from
the plurality of first deposition source nozzles 113 may flow to
the cooling plate 116. The first deposition material 117a flowing
to the cooling plate 116 is hardened, and the longer a deposition
process is, the more first deposition material 117a may be hardened
on the cooling plate 116, thereby blocking the plurality of first
deposition source nozzles 113. According to an embodiment of the
present invention, the plurality of first deposition source nozzles
113 are tilted toward the plurality of second deposition source
nozzles 123. However, in an embodiment of the present invention,
since the first to third protruding reflectors 114a to 114c
surround the plurality of first deposition source nozzles 113, the
plurality of first deposition source nozzles 113 are prevented or
substantially prevented from being blocked by the first deposition
material 117a that hardens on the cooling plate 116.
[0108] The second deposition source nozzle unit 140, in one
embodiment, includes the upper reflector 124, the fourth protruding
reflector 124a, the fifth protruding reflector 124b, the sixth
protruding reflector 124c, and the cooling plate 126. The upper
reflector 124 is disposed on the second deposition source 120 and
the heater 122. The upper reflector 124 may prevent or
substantially prevent heat generated by the heater 122 from being
emitted to the outside. The fourth and fifth protruding reflectors
124a and 124b extend from one end of the upper reflector 124 and
toward the patterning slit sheet 150. The fourth and fifth
protruding reflectors 124a and 124b, in one embodiment, are
disposed apart from each other by a predetermined distance to be
parallel with the plurality of second deposition source nozzles
123. The plurality of second deposition source nozzles 123 are
arranged between the fourth and fifth protruding reflectors 124a
and 124b. The sixth protruding reflector 124c extends from one end
of the fourth protruding reflector 124a and one end of the fifth
protruding reflector 124b to connect the fourth and fifth
protruding reflectors 124a and 124b. In one embodiment, the sixth
protruding reflector 124c is formed to connect one end of the
fourth protruding reflector 124a and one end of the fifth
protruding reflector 124b, which are adjacent to the first
deposition source 110. The heights of the fourth to sixth
protruding reflectors 124a, 124b, and 124c may be equal to or
greater than those of the plurality of second deposition source
nozzles 123.
[0109] Some of the second deposition material 117b discharged from
the plurality of second deposition source nozzles 123 may flow to
the cooling plate 126. The second deposition material 117b flowing
to the cooling plate 126 is hardened, and the longer a deposition
process is, the more second deposition material 117b may be
hardened on the cooling plate 126, thereby blocking the plurality
of second deposition source nozzles 123. According to one
embodiment of the present invention, the plurality of second
deposition source nozzles 123 are tilted toward the plurality of
first deposition source nozzles 113. However, in an embodiment of
the present invention, since the fourth to sixth protruding
reflectors 124a to 124c surround the plurality of second deposition
source nozzles 123, the plurality of second deposition source
nozzles 123 are prevented or substantially prevented from being
blocked by the second deposition material 117b that hardens on the
cooling plate 126.
[0110] The patterning slit sheet 150 and a frame 155 are disposed
between the first and second deposition sources 110 and 120 and the
substrate 400. A shape of the frame 155 may be similar to that of a
window frame. The patterning slit sheet 150 may be bound inside the
frame 155. The patterning slit sheet 150 includes the plurality of
patterning slits 151 arranged in the X-axis direction. The first
deposition material 117a and the second deposition material 117b,
which are vaporized in the first and second deposition sources 110
and 120, pass through the first deposition source nozzle unit 130,
the second deposition source nozzle unit 140, and the patterning
slit sheet 150, and then move toward the substrate 400. The
patterning slit sheet 150 may be manufactured by etching, which is
the same method as used in a conventional method of manufacturing
an FMM, and in particular, a striped FMM. A total number of the
patterning slits 151 may be greater than a total number of the
plurality of first and second deposition source nozzles 113 and
123.
[0111] The first and second deposition sources 110 and 120 and the
first and second deposition source nozzle units 130 and 140 that
are coupled to the first and second deposition sources 110 and 120,
respectively, may be disposed to be separated from the patterning
slit sheet 150 by a predetermined distance, and may be connected to
the patterning slit sheet 150 by first connection members 135. That
is, the first and second deposition sources 110 and 120, the first
and second deposition source nozzle units 130 and 140, and the
patterning slit sheet 150 may be formed as one body by being
connected to each other via the first connection members 135. The
connection members 135 may guide the first and second deposition
materials 117a and 117b, which are discharged through the plurality
of first and second deposition source nozzles 113 and 123, to move
straight and not to flow in the X-axis direction. In FIG. 4, the
connection members 135 are formed on left and right sides of the
first and second deposition sources 110 and 120, the first and
second deposition source nozzle units 130 and 140, and the
patterning slit sheet 150 to guide the deposition materials 117a
and 117b to not flow in the X-axis direction; however, embodiments
of the present invention are not limited thereto. In another
embodiment, for example, the connection members 135 may be formed
in the form of a sealed box to guide flow of the deposition
materials 117a and 117b both in the X-axis and Y-axis
directions.
[0112] As described above, the organic layer deposition apparatus
100 according to an embodiment of the present invention performs
deposition while being moved relative to the substrate 400. In
order to move the organic layer deposition apparatus 100 relative
to the substrate 400, the patterning slit sheet 150 is separated
from the substrate 400 by a predetermined distance.
[0113] In a conventional deposition method using a FMM, deposition
is performed with the FMM in close contact with a substrate in
order to prevent formation of a shadow zone on the substrate.
However, when the FMM is used in close contact with the substrate,
defects may occur. In addition, in the conventional deposition
method, the size of the mask has to be the same as the size of the
substrate since the mask cannot be moved relative to the substrate.
Thus, the size of the mask has to be increased as display
apparatuses become larger. However, it is not easy to manufacture
such a large mask.
[0114] In contrast, in the organic layer deposition apparatus 100
according to an embodiment of the present invention, the patterning
slit sheet 150 is disposed to be separated from the substrate 400
by a predetermined distance.
[0115] As described above, according to an embodiment of the
present invention, a patterning slit sheet is formed to be smaller
than a substrate, and deposition is performed while the patterning
slit sheet is moved relative to the substrate. Thus, the patterning
slit sheet can be easily manufactured. In addition, defects that
occur due to contact between a substrate and a FMM, in a
conventional deposition method may be prevented or substantially
prevented in the apparatus according to embodiments of the present
invention. Furthermore, since it is unnecessary to dispose the mask
in close contact with the substrate during a deposition process
according to the present invention, the manufacturing time may be
reduced.
[0116] FIG. 7 is a cross-sectional view of an active matrix organic
light-emitting display apparatus fabricated by using an organic
layer deposition apparatus, according to an embodiment of the
present invention.
[0117] Referring to FIG. 7, in one embodiment, a buffer layer 51 is
formed on a substrate 50 formed of glass or plastic. A TFT and an
OLED are formed on the buffer layer 51.
[0118] An active layer 52 having a predetermined pattern is formed
on the buffer layer 51. A gate insulating layer 53 is formed on the
active layer 52, and a gate electrode 54 is formed in a
predetermined region of the gate insulating layer 53. The gate
electrode 54 is connected to a gate line (not shown) that applies a
TFT ON/OFF signal. An interlayer insulating layer 55 is formed on
the gate electrode 54. Source/drain electrodes 56 and 57 are formed
so as to contact source/drain regions 52a and 52c, respectively, of
the active layer 52 through contact holes. A passivation layer 58
is formed of SiO.sub.2, SiN.sub.x, or the like, on the source/drain
electrodes 56 and 57. A planarization layer 59 is formed of an
organic material, such as acryl, polyimide, benzocyclobutene (BCB),
or the like, on the passivation layer 58. A pixel electrode 61,
which functions as an anode of the OLED, is formed on the
planarization layer 59, and a pixel defining layer 60 formed of an
organic material is formed to cover the pixel electrode 61. An
opening is formed in the pixel defining layer 60, and an organic
layer 62 is formed on a surface of the pixel defining layer 60 and
on a surface of the pixel electrode 61 exposed through the opening.
The organic layer 62 includes an emission layer. However, the
structure of the organic light-emitting display apparatus is not
limited to the above, and any of various structures of organic
light-emitting display apparatuses may be used.
[0119] The OLED displays predetermined image information by
emitting red, green and blue light as current flows. The OLED
includes the pixel electrode 61, which is connected to the drain
electrode 56 of the TFT and to which a positive power voltage is
applied, a counter electrode 63, which is formed so as to cover
every pixel and to which a negative power voltage is applied, and
the organic layer 62, which is disposed between the pixel electrode
61 and the counter electrode 63 to emit light.
[0120] The pixel electrode 61 and the counter electrode 63 are
insulated from each other by the organic layer 62, and respectively
apply voltages of opposite polarities to the organic layer 62 to
induce light emission in the organic layer 62.
[0121] The organic layer 62 may include a low-molecular weight
organic layer or a high-molecular weight organic layer. When a
low-molecular weight organic layer is used as the organic layer 62,
the organic layer 62 may have a single or multi-layer structure
including at least one selected from the group consisting of a hole
injection layer (HIL), a hole transport layer (HTL), an emission
layer (EML), an electron transport layer (ETL), and an electron
injection layer (EIL). Examples of available organic materials
include copper phthalocyanine (CuPc),
N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB),
tris-8-hydroxyquinoline aluminum (Alg3), and the like. The
low-molecular weight organic layer may be formed by vacuum
deposition.
[0122] When a high-molecular weight organic layer is used as the
organic layer 62, the organic layer 62 may mostly have a structure
including a HTL and an EML. In this case, the HTL may be formed of
poly(ethylenedioxythiophene) (PEDOT), and the EML may be formed of
polyphenylenevinylenes (PPVs) or polyfluorenes. The HTL and the EML
may be formed by screen printing, inkjet printing, or the like.
[0123] However, the organic layer 62 is not limited to the organic
layers described above, and may be embodied in various ways.
[0124] In one embodiment, the pixel electrode 61 functions as an
anode, and the counter electrode 63 functions as a cathode.
Alternatively, the pixel electrode 61 may function as a cathode,
and the counter electrode 63 may function as an anode.
[0125] The pixel electrode 61 may be formed as a transparent
electrode or a reflective electrode. Such a transparent electrode
may be formed of indium tin oxide (ITO), indium zinc oxide (IZO),
zinc oxide (ZnO), or indium oxide (In.sub.2O.sub.3). Such a
reflective electrode may be formed by forming a reflective layer
from silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt),
palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium
(Ir), chromium (Cr) or a compound thereof and forming a layer of
ITO, IZO, ZnO, or In.sub.2O.sub.3 on the reflective layer.
[0126] The counter electrode 63 may also be formed as a transparent
electrode or a reflective electrode. When the counter electrode 63
is formed as a transparent electrode, the counter electrode 63
functions as a cathode. To this end, such a transparent electrode
may be formed by depositing a metal having a low work function,
such as lithium (Li), calcium (Ca), lithium fluoride/calcium
(LiF/Ca), lithium fluoride/aluminum (LPN), aluminum (Al), silver
(Ag), magnesium (Mg), or a compound thereof on a surface of the
organic layer 62 and forming an auxiliary electrode layer or a bus
electrode line thereon by using a transparent electrode forming
material, such as ITO, IZO, ZnO, In.sub.2O.sub.3, or the like. When
the counter electrode 63 is formed as a reflective electrode, a
reflective layer may be formed by depositing Li, LiF/Ca, LiF/Al,
Al, Ag, Mg, or a compound thereof on the organic layer 62.
[0127] In the organic light-emitting display apparatus described
above, the organic layer 62 including the emission layer may be
formed by using the organic layer deposition apparatus 100 (see
FIG. 1), which is described above. The organic layer deposition
apparatuses according to the above embodiments of the present
invention may be applied to form an organic or inorganic layer of
an organic TFT, and to form layers from various materials.
[0128] As described above, the organic layer deposition apparatus
according to aspects of the present invention may be easily
manufactured, may be simply applied to the manufacture of
large-sized display apparatuses on a mass scale, and may prevent or
substantially prevent deposition source nozzles from being blocked
with a deposition material, thereby improving manufacturing yield
and deposition efficiency.
[0129] While the present invention has been particularly shown and
described with reference to some exemplary embodiments thereof, it
will be understood by those of ordinary skill in the art that
various changes in form and details may be made therein without
departing from the spirit and scope of the present invention as
defined by the following claims.
* * * * *