U.S. patent application number 13/367671 was filed with the patent office on 2012-05-31 for adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium.
This patent application is currently assigned to Nikon Corporation. Invention is credited to Shinichi Okita.
Application Number | 20120133913 13/367671 |
Document ID | / |
Family ID | 38518980 |
Filed Date | 2012-05-31 |
United States Patent
Application |
20120133913 |
Kind Code |
A1 |
Okita; Shinichi |
May 31, 2012 |
ADJUSTMENT METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE
PROCESSING APPARATUS, EXPOSURE APPARATUS, INSPECTION APPARATUS,
MEASUREMENT AND/OR INSPECTION SYSTEM, PROCESSING APPARATUS,
COMPUTER SYSTEM, PROGRAM AND INFORMATION RECORDING MEDIUM
Abstract
When a host issues an analysis order that specifically instructs
the analytical contents to an analytical apparatus (step 401), the
analytical apparatus collects two types of measurement and/or
inspection results from a measurement and/or inspection instrument
(steps 403 to 409), and in step 411, the analytical apparatus
analyzes the measurement and/or inspection results and optimizes
processing conditions of a series of processes related to wafer W.
In step 411, data related to a processing state of a processing
apparatus is acquired from the processing apparatus as needed. In
step 413, the measurement and/or inspection results and the
optimization results are accumulated in a database, and the
optimization results are transmitted to various processing
apparatuses (including the measurement and/or inspection
instrument). After that, the analytical apparatus sends a
processing end notice to the host (step 417).
Inventors: |
Okita; Shinichi;
(Nishitokyo-shi, JP) |
Assignee: |
Nikon Corporation
Tokyo
JP
|
Family ID: |
38518980 |
Appl. No.: |
13/367671 |
Filed: |
February 7, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11706377 |
Feb 15, 2007 |
8134681 |
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13367671 |
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60872504 |
Dec 4, 2006 |
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Current U.S.
Class: |
355/30 |
Current CPC
Class: |
G03F 7/70525
20130101 |
Class at
Publication: |
355/30 |
International
Class: |
G03B 27/52 20060101
G03B027/52 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 17, 2006 |
JP |
2006-041219 |
Claims
1. A substrate processing method in which a plurality of substrate
processings that include an exposure processing of forming a
pattern on a substrate by exposing the substrate and an inspection
processing of inspecting the substrate afterward are performed, the
method comprising: an acquisition process of acquiring information
as to whether the exposure processing is performed by liquid
immersion exposure or dry exposure; and an adjustment process of
adjusting a processing content of at least part of the plurality of
substrate processings in accordance with the acquired information;
and a transmission process of transmitting the adjustment result to
an apparatus that performs a relevant processing.
2. The substrate processing method according to claim 1, wherein in
the adjustment process, at least one of an inspection item,
inspection sensitivity and an inspection condition of the
inspection processing is switched depending on liquid immersion
exposure or dry exposure.
3. The substrate processing method according to claim 2, wherein in
the case the exposure processing is performed by liquid immersion
exposure, at least one of a defect inspection with respect to a
pattern defect peculiar to liquid immersion exposure, an
abnormality inspection of abnormality of the substrate due to
liquid used for liquid immersion exposure, and a remaining liquid
inspection of liquid that adheres on the substrate after liquid
immersion exposure is added as an inspection item of the inspection
processing.
4. The substrate processing method according to claim 3, wherein
the pattern defect peculiar to liquid immersion exposure includes a
stain adhering to an optical element of a projection optical system
that comes into contact with the liquid, or a pattern defect due to
a bubble or a foreign substance in the liquid, the abnormality
inspection of abnormality of the substrate due to the liquid
includes an inspection related to a watermark, a stain due to
infiltrating of a material of a film formed on the substrate into
the liquid and peeling of a film on the substrate, and the
remaining liquid inspection includes a foreign substance inspection
of a foreign substance in remaining liquid on the substrate.
5. The substrate processing method according to claim 2, wherein in
the case the exposure processing is performed by liquid immersion
exposure, the inspection sensitivity of the inspection processing
is set slightly higher than that of dry exposure.
6. The substrate processing method according to claim 2, wherein an
inspection condition of the inspection processing includes at least
one of a wavelength of illumination light that illuminates the
substrate during the inspection, a detection method, a detection
optical system and a detection algorithm.
7. The substrate processing method according to claim 6, wherein in
the case the exposure processing is performed by liquid immersion
exposure, an inspection condition of the inspection processing
includes at least one of shortening of a wavelength of the
illumination light, selection of a bright field out of bright and
dark fields, selection of an electron beam detection method out of
an optical detection method and the electron beam detection method,
selection of a confocal system, and selection of an image
comparison algorithm out of the image comparison algorithm, a
design data comparison algorithm and a feature extraction algorithm
as a detection algorithm.
8. The substrate processing method according to claim 1, wherein
the adjustment process includes a computation process of computing
correlativity between information on a monitoring result of a
liquid immersion portion during the liquid immersion exposure and
information on an inspection result of the inspection processing;
and an optimization process of optimizing at least one of an
exposure condition in the exposure processing and an inspection
condition in the inspection processing, based on the computed
correlativity.
9. The substrate processing method according to claim 8, wherein in
the optimization process, at least one of inspection frequency and
inspection sensitivity of a portion having the high correlativity
on the substrate is increased.
10. The substrate processing method according to claim 8, wherein
in the computation process, correlativity between information on a
period of time when each point on the substrate is immersed in
liquid and information on an inspection result of the inspection
processing is further computed, and in the optimization process, at
least one of an exposure route on the substrate, a film formation
condition to the substrate, a liquid removal condition on the
substrate after liquid immersion exposure is adjusted based on the
correlativity.
11. The substrate processing method according to claim 1, wherein
in the adjustment process, information on a permissible range of a
correction amount used to correct an exposure dose and focus that
are set is switched.
12. The substrate processing method according to claim 1, wherein
in the adjustment process, in the case the exposure processing is
performed by the liquid immersion exposure, an inspection
processing of a topcoat film that protects a resist film coated on
the substrate from liquid is added to an inspection content.
13. The substrate processing method according to claim 1, further
comprising: a storage process of storing information on a
inspection result of the inspection processing, and a computation
process of computing information on occurrence frequency of
abnormality at each point within the substrate based on the stored
information, wherein in the adjustment process, inspection
frequency at each point within the substrate is increased or
decreased based on the computed information on occurrence
frequency.
14. A substrate processing apparatus that performs a substrate
processing according to transmitted information using the substrate
processing method according to claim 1.
15. An exposure apparatus that performs exposure to a substrate
according to transmitted information using the substrate processing
method according to claim 1.
16. A measurement and/or inspection apparatus that performs
measurement and/or inspection of a substrate according to
transmitted information using the substrate processing method
according to claim 1.
17. A program that makes a computer execute a plurality of
substrate processings that include an exposure processing of
forming a pattern on a substrate by exposing the substrate and an
inspection processing of inspecting the substrate afterward, the
program making the computer execute: an acquisition procedure of
acquiring information as to whether the exposure processing is
performed by liquid immersion exposure or dry exposure; an
adjustment procedure of adjusting of a processing content of at
least part of the plurality of substrate processings in accordance
with the acquired information; and a transmission procedure of
transmitting the adjustment result to an apparatus that performs a
relevant processing.
18. The program according to claim 17, wherein in the adjustment
procedure, at least one of an inspection item, inspection
sensitivity, an inspection condition of the inspection processing
is switched depending on liquid immersion exposure or dry
exposure.
19. The program according to claim 18, wherein in the case the
exposure processing is performed by liquid immersion exposure, the
inspection sensitivity of the inspection processing is set slightly
higher than that of dry exposure.
20. The program according to claim 18, wherein the inspection
condition of the inspection processing includes at least one of a
wavelength of illumination light that illuminates the substrate
during the inspection, a detection method, a detection optical
system, and a detection algorithm.
21. The program according to claim 20, wherein in the case the
exposure processing is performed by liquid immersion exposure, an
inspection condition of the inspection processing includes at least
one of shortening of a wavelength of the illumination light,
selection of a bright field out of bright and dark fields,
selection of an electron beam detection method out of an optical
detection method and the electron beam detection method, selection
of a confocal system, and selection of an image comparison
algorithm out of the image comparison algorithm, a design data
comparison algorithm and a feature extraction algorithm as a
detection algorithm.
22. The program according to claim 17, wherein in the case the
exposure processing is performed by liquid immersion exposure, at
least one of a defect inspection with respect to a pattern defect
peculiar to liquid immersion exposure, an abnormality inspection of
abnormality of the substrate due to liquid used in liquid immersion
exposure and a remaining liquid inspection of remaining liquid that
adheres on the substrate after liquid immersion exposure is added
as an inspection item of the inspection processing.
23. The program according to claim 22, wherein the pattern defect
peculiar to liquid immersion exposure includes a stain adhering to
an optical element of a projection optical system that comes into
contact with the liquid, or a pattern defect due to a bubble or a
foreign substance in the liquid, the abnormality inspection of
abnormality of the substrate due to the liquid includes an
inspection related to a watermark, a stain due to infiltrating of a
material of a film formed on the substrate into the liquid and
peeling of a film on the substrate, and the remaining liquid
inspection includes a foreign substance inspection of a foreign
substance in remaining liquid on the substrate.
24. The program according to claim 17, wherein the adjustment
procedure includes a computation procedure of computing
correlativity between information on a monitoring result of a
liquid immersion portion during the liquid immersion exposure and
information on an inspection result of the inspection processing;
and an optimization procedure of optimizing at least one of an
exposure condition in the exposure processing and an inspection
condition in the inspection processing based on the computed
correlativity.
25. The program according to claim 24, wherein in the optimization
procedure, at least one of inspection frequency and inspection
sensitivity of a portion having the high correlation on the
substrate is increased.
26. The program according to claim 24, wherein in the computation
procedure, correlativity between information on a period of time
when each point on the substrate is immersed in liquid and
information on an inspection result of the inspection processing is
further computed, and in the optimization procedure, at least one
of an exposure route on the substrate, a film formation condition
to the substrate, a liquid removal condition on the substrate after
liquid immersion exposure is adjusted.
27. The program according to claim 17, wherein in the adjustment
procedure, information on a permissible range of a correction
amount used to correct an exposure dose and focus that are set is
switched.
28. The program according to claim 17, wherein in the adjustment
procedure, in the case the exposure processing is performed by the
liquid immersion exposure, an inspection processing of a topcoat
film that protects a resist film coated on the substrate from
liquid is added to an inspection content.
29. The program according to claim 17, further making the computer
execute: a storage procedure of storing information on a inspection
result of the inspection processing, and a computation procedure of
computing information on occurrence frequency of abnormality at
each point within the substrate based on the stored information,
wherein in the adjustment procedure, inspection frequency at each
point within the substrate is increased or decreased based on the
computed information on occurrence frequency.
30. A computer-readable information recording medium in which the
program according to claim 17 is recorded.
31. A program that makes a computer system execute a processing
process of a specific processing in which the specific processing
that is unnecessary for a substrate that is subject to a dry
exposure processing of irradiating exposure light on the substrate
without liquid is executed to a substrate that is subject to a
liquid immersion exposure processing of exposing the substrate with
exposure light via liquid, the program making the computer system
execute: a procedure of changing whether or not to execute the
specific processing in the processing process to a substrate based
on information that shows whether the substrate is subject to the
liquid immersion exposure processing or the dry exposure
processing.
32. The program according to claim 31, wherein the specific
processing is an inspection processing of a substrate subject to
the liquid immersion exposure processing or a measurement
processing related to a substrate subject to the liquid immersion
exposure processing.
33. The program according to claim 32, wherein the inspection
processing includes an inspection of a water repellent film that is
formed on the substrate.
34. The program according to claim 32, wherein the inspection
processing includes an inspection in which liquid that remains on
the substrate is detected after a processing of removing liquid on
the substrate.
35. The program according to claim 31, wherein the specific
processing includes a film formation processing of forming a water
repellent film on a substrate subject to the liquid immersion
exposure processing.
36. A computer-readable information recording medium in which a
program that makes a computer system execute a processing process
of a specific processing in which the specific processing that is
unnecessary for a substrate that is subject to a dry exposure
processing of irradiating exposure light to the substrate without
liquid is executed to a substrate that is subject to a liquid
immersion exposure processing of exposing the substrate with
exposure light via liquid is recorded, wherein the program is a
program that makes the computer system execute a procedure of
changing whether or not to execute the specific processing in the
processing process to a substrate based on information that shows
whether the substrate is subject to the liquid immersion exposure
processing or the dry exposure processing.
37. The information recording medium according to claim 36, wherein
the specific processing is an inspection processing of a substrate
subject to the liquid immersion exposure processing or a
measurement processing related to a substrate subject to the liquid
immersion exposure processing.
38. The information recording medium according to claim 37, wherein
the inspection processing includes an inspection of a water
repellent film that is formed on the substrate.
39. The information recording medium according to claim 37, wherein
the inspection processing includes an inspection in which liquid
that remains on the substrate is detected after a processing of
removing liquid on the substrate.
40. The information recording medium according to claim 36, wherein
the specific processing includes a film formation processing of
forming a water repellent film on a substrate subject to the liquid
immersion exposure processing.
41. A measurement and/or inspection system that implements at least
one of a measurement processing and an inspection processing to a
substrate that is subject to one of a liquid immersion exposure
processing of exposing the substrate with exposure light via liquid
and a dry exposure processing of irradiating exposure light on the
substrate without liquid, the system comprising: a specific
measurement and/or inspection section that executes a specific
measurement and/or inspection processing that is unnecessary for a
substrate that is subject to the dry exposure processing to a
substrate that is subject to the liquid immersion exposure
processing, wherein whether or not the specific measurement and/or
inspection section executes the specific measurement and/or
inspection processing is changed, in accordance with information
that shows whether a substrate is subject to the liquid immersion
exposure processing or the dry exposure processing.
42. The measurement and/or inspection system according to claim 41,
wherein the measurement and/or inspection processing includes an
inspection of a water repellent film that is formed on the
substrate.
43. The measurement and/or inspection system according to claim 41,
wherein the measurement and/or inspection processing includes an
inspection in which liquid that remains on the substrate is
detected after a processing of removing liquid on the
substrate.
44. A processing apparatus that executes a specific processing that
is unnecessary for a substrate that is subject to a dry exposure
processing of irradiating exposure light to the substrate without
liquid to a substrate that is subject to a liquid immersion
exposure processing of exposing the substrate with exposure light
via liquid, wherein whether or not to execute the specific
processing to a substrate is changed in accordance with information
that shows whether the substrate is subject to the liquid immersion
exposure processing or the dry exposure processing.
45. The processing apparatus according to claim 44, wherein the
specific processing is an inspection processing of a substrate
subject to the liquid immersion exposure processing or a
measurement processing related to a substrate subject to the liquid
immersion exposure processing.
46. The processing apparatus according to claim 45, wherein the
inspection processing includes an inspection of a water repellent
film that is formed on the substrate.
47. The processing apparatus according to claim 45, wherein the
inspection processing includes an inspection in which liquid that
remains on the substrate is detected after a processing of removing
liquid on the substrate.
48. The processing apparatus according to claim 44, wherein the
specific processing includes a film formation processing of forming
a water repellent film on a substrate subject to the liquid
immersion exposure processing.
49. A computer system that controls a processing process of a
specific processing in which the specific processing that is
unnecessary for a substrate that is subject to a dry exposure
processing of irradiating exposure light to the substrate without
liquid is executed to a substrate that is subject to a liquid
immersion exposure processing of exposing the substrate with
exposure light via liquid, wherein whether or not to execute the
specific processing in the processing process to a substrate is
changed in accordance with information that shows whether the
substrate is subject to the liquid immersion exposure processing or
the dry exposure processing.
50. The computer system according to claim 49, wherein the specific
processing is an inspection processing of a substrate subject to
the liquid immersion exposure processing or a measurement
processing related to a substrate subject to the liquid immersion
exposure processing.
51. The computer system according to claim 50, wherein the
inspection processing includes an inspection of a water repellent
film that is formed on the substrate.
52. The computer system according to claim 50, wherein the
inspection processing includes an inspection in which liquid that
remains on the substrate is detected after a processing of removing
liquid on the substrate.
53. The computer system according to claim 49, wherein the specific
processing includes a film formation processing of forming a water
repellent film on a substrate subject to the liquid immersion
exposure processing.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application
Ser. No. 11/706,377 filed Feb. 15, 2007 which claims the benefit of
Provisional Application No. 60/872,504 filed Dec. 4, 2006, the
disclosures of which are hereby incorporated herein by reference in
their entireties.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to adjustment methods,
substrate processing methods, substrate processing apparatuses,
exposure apparatuses, inspection apparatuses, measurement and/or
inspection systems, processing apparatuses, computer systems,
programs and information recording media, and more particularly, an
adjustment method in which processing conditions of a series of a
plurality of substrate processings that include a measurement
and/or inspection processing are adjusted, a substrate processing
method in which a plurality of substrate processings that include
an exposure processing of forming a pattern on a substrate and an
inspection processing of inspecting a substrate are performed, a
substrate processing apparatus that uses the adjustment method or
the substrate processing method, an exposure apparatus and an
inspection apparatus, a measurement and/or inspection system that
implements at least one of a measurement processing and an
inspection processing to a substrate that is subject to an exposure
processing, a processing apparatus that executes a specific
processing to a substrate that is subject to a liquid immersion
exposure processing, a computer system that controls a processing
process of the specific processing, a program that makes a computer
execute a plurality of substrate processings that include an
exposure processing of forming a pattern on a substrate and an
inspection processing of inspecting a substrate, and a
computer-readable information recording medium in which the program
is recorded.
[0004] 2. Description of the Background Art
[0005] A semiconductor device, a liquid crystal display device, an
imaging device such as CCD (Charge Coupled Device), or a
microdevice (electron device) such as a thin film magnetic head is
manufactured by repeating a series of a plurality of substrate
processings such as a film formation/resist coating processing, an
exposure processing, a postbake (PEB) processing, a development
processing and an etching processing to a substrate such as a
wafer. In the series of substrate processings, when the individual
substrate processing ends, a measurement and/or inspection
processing to a substrate is performed and whether a state of the
substrate is favorable or not is checked, for the purpose of
improving the yield. A measurement and/or inspection processing of
a film on a substrate after the film formation/resist coating
processing, a defect inspection of a pattern formed on a substrate
after the development processing or the etching processing, and the
like are the examples. Measurement and/or inspection results of
such a measurement and/or inspection processing are used for
adjustment of various processing apparatuses that performs a
substrate processing, such as a film forming apparatus, a
coater/developer (C/D), an exposure apparatus, and an etching
apparatus, in addition to judgment of quality of the substrate.
[0006] Adjustment of device manufacturing apparatuses based on a
single measurement and/or inspection result has been conventionally
preformed by, for example, adjusting the film forming apparatus or
the coater in the case abnormality of a film is recognized in the
measurement and/or inspection processing of the film on a substrate
after the film formation/resist coating processing, or adjusting
the exposure apparatus in the case abnormality is recognized in a
pattern on a substrate after the exposure processing.
[0007] Recently, since the processing contents of a series of a
plurality of substrate processings have been further complicated
due to, for example, multilayered films formed on a substrate to
cope with a finer device pattern, it is gradually becoming
difficult to efficiently remove the cause of the abnormality based
on a single measurement and/or inspection result.
[0008] Meanwhile, in the recent exposure apparatuses, the higher
resolution has been required to cope with a finer device pattern,
and an exposure apparatus that uses liquid immersion exposure
techniques (liquid immersion exposure apparatus) that realizes the
higher resolution and the wider depth of focus has begun to be
introduced. By the introduction of the liquid immersion exposure,
transfer of a finer device pattern can be performed than before. At
present, in order to efficiently operate the liquid immersion
exposure apparatus and the conventional exposure apparatus (dry
exposure apparatus), the liquid immersion exposure apparatus is
used for exposure of a layer that requires critical pattern
transfer accuracy, for example, exposure in a contact hole process
or a gate formation process (isolated line), and the conventional
exposure apparatus is used for exposure of a layer that requires a
relatively relaxed pattern transfer accuracy.
[0009] In general, the required accuracy becomes higher for a
pattern that is formed on a substrate by liquid immersion exposure.
Further, since liquid that remains on a substrate (remaining
liquid) affects the processings such as the postbake, the
development and the etching after exposure, it is necessary to
remove the liquid completely and confirm that there is no remaining
liquid. In this manner, an inspection such as an inspection of the
remaining liquid that is different from a measurement and/or
inspection for a substrate to which exposure is performed in the
conventional exposure apparatus is preferably performed to a
substrate to which liquid immersion exposure is performed. Under
the present situation, however, the measurement and/or inspection
processings under the similar measurement and/or inspection
conditions are constantly performed to both of a substrate to which
dry exposure is performed and a substrate to which liquid immersion
exposure is performed because of the stand-alone configuration of a
measurement and/or inspection instrument or the like.
SUMMARY OF THE INVENTION
[0010] The present invention has been made under such
circumstances, and according to a first aspect of the present
invention, there is provided an adjustment method in which a
processing condition of a series of a plurality of substrate
processings that include a measurement and/or inspection processing
is adjusted, the method comprising: a collection process of
collecting information on at least two types of measurement and/or
inspection results related to at least one substrate; an
optimization process of optimizing a processing condition of at
least part of the plurality of substrate processings based on the
collected information on at least two types of measurement and/or
inspection results; and a transmission process of transmitting
information on the optimized processing condition to an apparatus
that performs a relevant processing.
[0011] With this method, information on at least two types of
measurement and/or inspection results of measurement and/or
inspection processings that are included in a series of a plurality
of substrate processings is collected, and based on the collected
information on two types of measurement and/or inspection results,
optimization of a processing condition of at least part of the
plurality of substrate processings is performed. Then, information
on the optimized processing condition is transmitted to an
apparatus that performs a relevant processing. Therefore, more
efficient optimization of the processing condition can be performed
than the case when the processing condition is optimized using only
one type of measurement and/or inspection result.
[0012] According to a second aspect of the present invention, there
is provided a first substrate processing method, comprising: an
adjustment process of adjusting a processing condition of a
substrate processing using the adjustment method of the present
invention. With this method, a processing condition of a substrate
processing can appropriately be adjusted using the adjustment
method of the present invention.
[0013] According to a third aspect of the present invention, there
is provided a second substrate processing method in which a
plurality of substrate processings that include an exposure
processing of forming a pattern on a substrate by exposing the
substrate and an inspection processing of inspecting the substrate
afterward are performed, the method comprising: an acquisition
process of acquiring information as to whether the exposure
processing has been performed by liquid immersion exposure or dry
exposure; and an adjustment process of adjusting a processing
condition of a substrate processing using the adjustment method of
the present invention, in the case the exposure processing is
judged to have been performed by liquid immersion exposure based on
the acquired information. With this method, a substrate condition
of a substrate processing can appropriately be adjusted depending
on whether the exposure processing has been performed by liquid
immersion exposure or dry exposure.
[0014] According to a fourth aspect of the present invention, there
is provided a third substrate processing method in which a
plurality of substrate processings that include an exposure
processing of forming a pattern on a substrate by exposing the
substrate and an inspection processing of inspecting the substrate
afterward are performed, the method comprising: an acquisition
process of acquiring information as to whether the exposure
processing is performed by liquid immersion exposure or dry
exposure; an adjustment process of adjusting a processing content
of at least part of the plurality of substrate processings in
accordance with the acquired information; and a transmission
process of transmitting the adjustment result to an apparatus that
performs a relevant processing.
[0015] With this method, a processing content of at least part of
the plurality of substrate processings is adjusted in accordance
with information as to whether the exposure processing is performed
by liquid immersion exposure or dry exposure. Then, the adjustment
result is transmitted to an apparatus that performs a relevant
processing. Therefore, by appropriately adjusting the processing
condition in accordance with the exposure method that is performed
to a substrate, the yield can be improved.
[0016] According to a fifth aspect of the present invention, there
is provided a substrate processing apparatus that performs a
substrate processing according to transmitted information using any
one of four methods that are the adjustment method of the present
invention and the first, second and third substrate processing
methods of the present invention. With this apparatus, since a
substrate processing can be performed under the processing
condition that is optimized using any one of four methods that are
the adjustment method of the present invention and the first to
third substrate processing methods of the present invention, the
yield can be improved.
[0017] According to a sixth aspect of the present invention, there
is provided an exposure apparatus that performs exposure to a
substrate according to transmitted information using the third
substrate processing method of the present invention. With this
apparatus, since exposure can be preformed under the processing
condition that is optimized using the third substrate processing
method of the present invention, the yield can be improved.
[0018] According to a seventh aspect of the present invention,
there is provided a measurement and/or inspection apparatus that
performs measurement and/or inspection of a substrate according to
transmitted information using the third substrate processing method
of the present invention. With this apparatus, since a measurement
and/or inspection processing can be performed under the processing
condition that is optimized using the third substrate processing
method of the present invention, the yield can be improved.
[0019] According to an eighth aspect of the present invention,
there is provided a first program that makes a computer execute a
plurality of substrate processings that include an exposure
processing of forming a pattern on a substrate by exposing the
substrate and an inspection processing of inspecting the substrate
afterward, the program making the computer execute: an acquisition
procedure of acquiring information as to whether the exposure
processing is performed by liquid immersion exposure or dry
exposure; an adjustment procedure of adjusting a processing content
of at least part of the plurality of substrate processings in
accordance with the acquired information; and a transmission
procedure of transmitting the adjustment result to an apparatus
that performs a relevant processing.
[0020] With this program, since a processing content of at least
part of the plurality of substrate processing is adjusted in
accordance with information as to whether the exposure processing
is performed by liquid immersion exposure or dry exposure, the
processing condition can appropriately be adjusted in accordance
with the exposure that is performed to a substrate and the yield
can be improved.
[0021] According to a ninth aspect of the present invention, there
is provided a first computer-readable information recording medium
in which the first program of the present invention is recorded.
Accordingly, by setting the first information recording medium in a
computer and installing the first program inside the first
information recording medium, the computer can be made to execute
the first program of the present invention, which makes it possible
to make the processing content of the substrate processing be
appropriate.
[0022] According to a tenth aspect of the present invention, there
is provided a second program that makes a computer system execute a
processing process of a specific processing in which the specific
processing that is unnecessary for a substrate that is subject to a
dry exposure processing of irradiating exposure light on the
substrate without liquid is executed to a substrate that is subject
to a liquid immersion exposure processing of exposing the substrate
with exposure light via liquid, the program making the computer
system execute: a procedure of changing whether or not to execute
the specific processing in the processing process to a substrate
based on information that shows whether the substrate is subject to
the liquid immersion exposure processing or the dry exposure
processing.
[0023] With this program, with respect to only a substrate subject
to the liquid immersion exposure processing, the processing process
of a specific processing that is required for the substrate
(processing peculiar to liquid immersion) can be executed.
[0024] According to an eleventh aspect of the present invention,
there is provided a second computer-readable information recording
medium in which a program that makes a computer system execute a
processing process of a specific processing in which the specific
processing that is unnecessary for a substrate that is subject to a
dry exposure processing of irradiating exposure light to the
substrate without liquid is executed to a substrate that is subject
to a liquid immersion exposure processing of exposing the substrate
with exposure light via liquid is recorded, wherein the program is
a program that makes the computer system execute a procedure of
changing whether or not to execute the specific processing in the
processing process to a substrate based on information that shows
whether the substrate is subject to the liquid immersion exposure
processing or the dry exposure processing.
[0025] Accordingly, by setting the second information recording
medium in a computer and installing the program inside the
information recording medium (which is substantially the same as
the second program of the present invention), the computer can be
made to execute the second program of the present invention, and
thus, with respect to only a substrate subject to the liquid
immersion exposure processing, the processing process of the
specific processing that is required for the substrate (processing
peculiar to liquid immersion) can be executed.
[0026] According to a twelfth aspect of the present invention,
there is provided a measurement and/or inspection system that
implements at least one of a measurement processing and an
inspection processing to a substrate that is subject to any one of
a liquid immersion exposure processing of exposing the substrate
with exposure light via liquid and a dry exposure processing of
irradiating exposure light on the substrate without liquid, the
system comprising: a specific measurement and/or inspection section
that executes a specific measurement and/or inspection processing
that is unnecessary for a substrate that is subject to the dry
exposure processing to a substrate that is subject to the liquid
immersion exposure processing, wherein whether or not the specific
measurement and/or inspection section executes the specific
measurement and/or inspection processing is changed, in accordance
with information that shows whether a substrate is subject to the
liquid immersion exposure processing or the dry exposure
processing.
[0027] With this system, with respect to only a substrate subject
to the liquid immersion exposure processing, a specific measurement
and/or inspection processing that is required for the substrate
(measurement and/or inspection processing peculiar to liquid
immersion) can be executed.
[0028] According to a thirteenth aspect of the present invention,
there is provided a processing apparatus that executes a specific
processing that is unnecessary for a substrate that is subject to a
dry exposure processing of irradiating exposure light to the
substrate without liquid to a substrate that is subject to a liquid
immersion exposure processing of exposing the substrate with
exposure light via liquid, wherein whether or not to execute the
specific processing to a substrate is changed in accordance with
information that shows whether the substrate is subject to the
liquid immersion exposure processing or the dry exposure
processing.
[0029] With this apparatus, with respect to only a substrate
subject to the liquid immersion exposure processing, a specific
processing that is required for the substrate (processing peculiar
to liquid immersion) can be executed.
[0030] According to a fourteenth aspect of the present invention,
there is provided a computer system that controls a processing
process of a specific processing in which the specific processing
that is unnecessary for a substrate that is subject to a dry
exposure processing of irradiating exposure light to the substrate
without liquid is executed to a substrate that is subject to a
liquid immersion exposure processing of exposing the substrate with
exposure light via liquid, wherein whether or not to execute the
specific processing in the processing process to a substrate is
changed in accordance with information that shows whether the
substrate is subject to the liquid immersion exposure processing or
the dry exposure processing.
[0031] With this computer system, with respect to only a substrate
subject to the liquid immersion exposure processing, a specific
processing that is required for the substrate (processing peculiar
to liquid immersion) can be executed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0032] FIG. 1 is a view showing a schematic configuration of a
device manufacturing system related to an embodiment of the present
invention;
[0033] FIG. 2 is a view showing a schematic configuration of a dry
exposure apparatus;
[0034] FIG. 3A is an entire view of a wafer and FIG. 3B is an
enlarged view of part of the wafer;
[0035] FIG. 4 is a view used to explain a liquid immersion exposure
apparatus;
[0036] FIG. 5 is a view used to explain an exposure apparatus main
section in FIG. 4;
[0037] FIG. 6 is a view used to explain a liquid immersion system
in FIG. 5;
[0038] FIGS. 7A to 7C are views each used to explain a problem
peculiar to the liquid immersion system;
[0039] FIG. 8A and FIG. 8B are views each used to explain a liquid
immersion monitor;
[0040] FIG. 9 is a view used to explain a CCD sensor module of the
liquid immersion monitor;
[0041] FIG. 10 is a view used to explain an object plane position
of each line sensor in the CCD sensor module in FIG. 9;
[0042] FIG. 11 is a view used to explain the line sensor in FIG.
10;
[0043] FIG. 12 is a view used to explain the liquid immersion
monitor installed on a substrate holder;
[0044] FIG. 13 is a view used to explain a removal unit T in FIG.
4;
[0045] FIG. 14 is a view used to explain a generating unit in FIG.
13;
[0046] FIG. 15 is a view used to explain an elastic stator and an
oscillating body in FIG. 13;
[0047] FIG. 16 is a view (No. 1) used to explain the working of the
generating unit in FIG. 14;
[0048] FIG. 17 is a view (No. 2) used to explain the working of the
generating unit in FIG. 14;
[0049] FIG. 18 is a view (No. 3) used to explain the working of the
generating unit in FIG. 14;
[0050] FIG. 19 is a view (No. 4) used to explain the working of the
generating unit in FIG. 14;
[0051] FIG. 20A and FIG. 20B are views each used to explain an
elastic stator that has gas outlets;
[0052] FIG. 21A and FIG. 21B are views each used to explain an
elastic stator that has suction openings;
[0053] FIG. 22 is a view showing the control operation of an
exposure apparatus by a host;
[0054] FIG. 23 is a view showing the control operation of a C/D by
the host;
[0055] FIG. 24 is a view showing the control operation of a device
manufacturing apparatus group by the host;
[0056] FIG. 25 is a view showing the control operation of a
measurement and/or inspection instrument by the host;
[0057] FIG. 26A is an example of an image showing a pattern defect
peculiar to liquid immersion at the time of liquid immersion
exposure, and FIG. 26B is a view showing the characteristics of a
pattern peculiar to liquid immersion;
[0058] FIG. 27 is a view showing the control operation of an
analytical apparatus by the host;
[0059] FIG. 28 is a table showing an individual processing in the
process;
[0060] FIG. 29A is a sectional view of part of a wafer, FIG. 29B is
an example of mark waveform data, and FIG. 29C is an example of
film thickness data;
[0061] FIG. 30 is a flowchart of optimization of wafer
alignment;
[0062] FIG. 31A is a view showing a section of part of a wafer,
[0063] FIG. 31B is an example of measurement data of a surface
shape of the wafer, and FIG. 31C is an example of measurement data
of film thickness;
[0064] FIG. 32 is a flowchart of optimization of
focus-control-related parameters;
[0065] FIG. 33A is a view showing an example of foreign substance
inspection data (B), and FIG. 33B is a view showing an example of
foreign inspection data (C);
[0066] FIG. 34 is a flowchart of optimization of processing
conditions of a wafer appearance inspection before exposure;
[0067] FIG. 35 is a flowchart of optimization of
liquid-immersion-exposure-related processing conditions (No.
1);
[0068] FIG. 36 is a view showing an exposure route on wafer W;
[0069] FIG. 37 is a view showing a liquid immersion state during
alignment;
[0070] FIG. 38 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 2);
[0071] FIG. 39 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 3);
[0072] FIG. 40 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 4);
[0073] FIG. 41 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 5);
[0074] FIG. 42 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 6);
[0075] FIG. 43 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 7);
[0076] FIG. 44 is a flowchart of analytical processing in
optimization of liquid-immersion-exposure-related processing
conditions (No. 8);
[0077] FIG. 45 is a flowchart of analytical processing of
optimization of pattern-overlay-accuracy-related processing
conditions (No. 1); and
[0078] FIG. 46 is a flowchart of analytical processing in
optimization of pattern-overlay-accuracy-related processing
conditions (No. 2).
BEST MODE FOR CARRYING OUT THE INVENTION
[0079] An embodiment of the present invention will be described
below, referring to FIGS. 1 to 46.
[Device Manufacturing System]
[0080] FIG. 1 shows the schematic configuration of a device
manufacturing system 1000 related to an embodiment of the present
invention. Device manufacturing system 1000 is, for example, a
system: that is constructed in a semiconductor plant, and is a
system that manufactures semiconductor devices by processing wafers
as substrates. As is shown in FIG. 1, device manufacturing system
1000 is equipped with an in-house production control main host
system 600, an exposure cell 700, a carrier line 800, a device
manufacturing apparatus group 900, an exposure process management
controller 160, and an analytical apparatus 170.
[In-House Production Control Main Host System]
[0081] In-house production control main host system (hereinafter
referred to as a "host") 600 is a main host computer that grasps
the state of the entire (respective constituents of) device
manufacturing system 1000 and performs the overall control of
exposure cell 700, carrier line 800, device manufacturing apparatus
group 900, exposure process management controller 160 and
analytical apparatus 170. Host 600, exposure cell 700, carrier line
800 (to be more specific, the controller thereof), device
manufacturing apparatus group 900, exposure process management
controller 160 and analytical apparatus 170 are connected to each
other via wired or wireless communication network or dedicated
communication line, and data communication can be performed between
them. Host 600 realizes the overall control of the entire system by
the data communication.
[0082] Exposure cell 700 is equipped with two exposure apparatuses
100 and 101, two tracks 200A and 200B, a measurement and/or
inspection instrument 120, and a carrier line 140.
[0083] Exposure apparatuses 100 and 101 are apparatuses that
transfer a device pattern onto a wafer that is coated with
photoresist. Exposure apparatus 100 is an exposure apparatus that
performs exposure without using liquid immersion exposure
techniques (so-called dry exposure), and exposure apparatus 101 is
an exposure apparatus that performs exposure using liquid immersion
exposure techniques (so-called liquid immersion exposure). In the
following description, exposure apparatus 100 is also referred to
as a dry exposure apparatus, and exposure apparatus 101 is also
referred to as a liquid immersion exposure apparatus.
[Dry Exposure Apparatus]
[0084] First of all, the configuration of exposure apparatus 100
will be described. FIG. 2 shows an example of the schematic
configuration of exposure apparatus 100. Exposure apparatus 100 is
equipped with an illumination system 10 that emits a coherent
illumination light EL, a reticle stage RST that holds a reticle R
on which a device pattern and the like that are illuminated by
illumination light EL are formed, a both-side telecentric
projection optical system PL that projects the device pattern and
the like that have been illuminated by illumination light EL, a
wafer stage WST that holds a wafer W that becomes subject to
exposure, a main controller 20 that performs the overall control of
these constituents, and the like.
[0085] Illumination light EL from illumination system 10
illuminates a device pattern such as a circuit pattern that is
formed on reticle R held on reticle stage RST. An irradiation area
of illumination light EL is to be an illumination area IAR.
Illumination light EL passing through illumination area IAR is
incident on wafer W held on wafer stage WST via projection optical
system PL (whose optical axis is to be "AX"). With this operation,
a projected image of the device pattern within illumination area
IAR is formed in an irradiation area (exposure area) IA on wafer W
of illumination light EL that is conjugate with illumination area
IAR.
[0086] Herein, an XYZ coordinate system that uses a coordinate axis
parallel to optical axis AX of projection optical system PL as a
Z-axis will be considered. Wafer stage WST can move on a moving
plane parallel to an XY plane, and also can adjust the surface of
wafer W in a Z-axis direction, a .theta.x (rotation around an
X-axis) direction and a .theta.y (rotation around a Y-axis)
direction. Reticle stage RST can move in a Y-axis direction
synchronously with wafer stage WST. By the synchronous scanning of
both stages WST and RST in the Y-axis direction in accordance with
a projection magnification of projection optical system PL, the
surface of wafer W traverses exposure area IA synchronously with a
device pattern on reticle R traversing illumination area TAR. With
this operation, the entire device pattern on reticle R is
transferred onto wafer W. Exposure apparatus 100 transfers the
device pattern on reticle R in a plurality of different areas on
wafer W by repeating the relative synchronous scanning of both
stages RST and WST described above and the stepping of wafer stage
WST with respect to illumination light EL. That is, exposure
apparatus 100 is an exposure apparatus by a scanning exposure
(step-and-scan) method.
[0087] Main controller 20 is quipped with an exposure dose control
system that controls intensity (exposure dose) of illumination
light, a stage control system that performs synchronous control of
both stages RST and WST, autofocus-leveling control (hereinafter,
simply referred to as "focus control") that matches the surface of
wafer W within a depth of focus of projection optical system PL,
and the like, a lens control system that controls image-forming
performance of projection optical system PL (none of which is
shown), and the like.
[0088] The exposure dose control system performs feedback control
in which an exposure dose is controlled so as to coincide with a
target value based on detection values of various exposure dose
sensors that can detect the exposure dose.
[0089] The stage control system performs position control and
velocity control of both stages RST and WST in which the positions
of stages RST and WST are controlled so as to coincide with the
target positions, based on measurement values of interferometers
and the like that measure the positions of stages RST and WST.
[0090] Out of the stage control system, a control system that
performs synchronous control of both stages WST and RST is to be a
synchronous control system and a control system that controls the
Z-position of the stage position (wafer surface) (i.e. the position
of wafer W in the focus direction of projection optical system PL),
and a rotation amount around the X-axis and the Y-axis (a tilt of
the wafer surface with respect to a projected image of a device
pattern) is to be a focus control system.
[0091] The synchronous control system performs synchronous control
of both stages RST and WST during scanning exposure, and performs
feedback control based on the measurement values of the
interferometers and the like so that the synchronous error between
the stages can be reduced. Further, in exposure apparatus 100, a
multipoint AF (Autofocus) sensor (60a, 60b) that detects the
focus/leveling deviation of the wafer surface at a plurality of
detection points is arranged. The focus control system performs
feedback control in which, for example, around 9 detection points
are selected among the plurality of (e.g. 7.times.7=49) detection
points of the multipoint AF sensor (60a, 60b), the height and tilt
of the wafer surface are obtained from the detection values of 9
channels at the selected detection points, and the wafer surface
corresponding to exposure area IA is made to match the image plane
of projection optical system PL.
[0092] The target value of exposure dose in the exposure control
system and the target value of focus of the focus control system
are decided taking a device pattern to be transferred onto wafer W
into consideration. Consider a plane having an exposure dose as a
horizontal axis and focus as a vertical axis. Within this plane,
consider a frame (window) that indicates a range that can be set as
the target value of exposure dose and the target value of focus.
This frame is called a process window. Any exposure dose or focus
within the process window can be set as the control target value.
The process window is decided, taking into consideration a line
width in design of a device pattern, a relation between the
exposure dose and the focus with which a pattern line becomes
uniform, a balance between the resolution of projection optical
system PL and the depth of focus, and the like. When the depth of
focus of the projection optical system becomes larger, the width of
the process window in the focus direction can be set wider.
[0093] Projection optical system PL contains a plurality of optical
systems (not shown) such as dioptric elements (lens elements). Out
of theses lens elements, some lens elements are movable lenses
whose position and attitude can be adjusted from the outside by the
lens control system. Each of the lens elements can be shifted and
driven in the X-axis, Y-axis, and Z-axis (optical axis) directions
and can also be rotated and driven in a rotation direction around
each axis (.theta.x, .theta.y and .theta.z), that is, can be driven
in directions of six degrees of freedom. The lens control system
monitors the atmospheric pressure, the temperature within a chamber
of exposure apparatus 100, the exposure dose and the temperature of
lenses of projection optical system PL, computes the magnification
variation amount of projection optical system PL and the focus
variation amount based on the monitoring results, and then performs
adjustment of the pressure inside projection optical system PL and
adjustment of lens spacing of the movable lens elements based on
the variation amounts using an image-forming characteristics
correction controller 48. With this operation, the best focus
position and the magnification follow the target values.
[Control System Parameter]
[0094] In exposure apparatus 100, several factors that set the
operations of the exposure dose control system, the stage control
system and the lens control systems described above are
parameterized. They are called control system parameters. The
values of the control system parameters can freely be set within an
appropriate range. The control system parameters are roughly
divided into adjustment system parameters that require suspension
of the process and apparatus adjustment when the setting values are
changed, and non-adjustment system parameters that do not require
apparatus adjustment.
[0095] Several representative examples of the adjustment system
parameters will be described. First, regarding the exposure dose
control system, there are an adjustment parameter of an exposure
dose sensor (not shown) that detects an exposure dose, an
adjustment parameter of an illuminance measurement sensor (not
shown) that measures intensity of illumination light on the wafer
surface, and the like. Further, regarding the synchronous control
system, there are parameters such as a coefficient value of a
correction function for correcting bending of movable mirrors that
are arranged on stages WST and RST to reflect a laser beam from
interferometers for position measurement of stages WST and RST,
position loop gain of feedback control, velocity loop gain,
constant of integration and the like. Further, regarding the focus
control system, there are a focus offset that is an offset
adjustment value of focus control when matching the wafer surface
and an optimal image-forming plane by projection optical system PL
on exposure, a leveling adjustment parameter for matching the wafer
surface and the optimal image-forming plane of projection optical
system PL on exposure, linearity of a position detection device
(PSD) that is a sensor at an individual detection point of the
multipoint AF sensor (60a, 60b), offset among sensors, detection
repeatability of each sensor, offset among channels, an AF beam
irradiation position (i.e. detection point) on the wafer, other
parameters relating to AF plane correction, and the like. Either of
the values of these adjustment system parameters needs to be
adjusted by calibration or test operation of the apparatus.
[0096] Next, several representative examples of the non-adjustment
system parameters will be described. First, regarding the exposure
dose control system, for example, there are a parameter related to
selection of an ND filter in illumination system 10, an exposure
dose target value and the like. Further, regarding the synchronous
control system, for example, there are scan velocity of both stages
WST and RST during exposure and the like. Further, regarding the
focus control system, for example, there are the number and the
placement of focus sensors, that is, the selection state of focus
sensors, a parameter related to focus level difference correction,
a fine adjustment amount of focus offset, a scan direction on an
edge shot (chipped shot) of the wafer outer edge, and the like.
Among the foregoing parameters, the selection state of focus
sensors is an important parameter for highly accurate focus
control. The wafer surface is not completely flat, and has
unevenness even within an area that is covered by all the detection
points of the multipoint AF sensor (60a, 60b). Accordingly, in
order to accurately position the wafer surface within exposure area
IA into the depth of focus of projection optical system PL, it is
preferable to select the detection points so that the surface
height of the wafer surface that is detected by each detection
point becomes as uniform as possible. Further, the height of the
wafer surface that is detected by each detection point of the
multipoint AF sensor (60a, 60b) is sometimes affected by a film
thickness of a resist film or the like at the detection point. In
order to reduce the influence of the film thickness, it is
preferable to select detection points so that the film thickness of
the resist film at points that are detected by the detection points
becomes as uniform as possible.
[0097] Either of the setting values of these parameters are a
parameter whose value can be changed without performing calibration
of the apparatus, and most of them are designated by the exposure
recipe. Incidentally, the ND filter is selected by the result of a
check (average power check) that is performed only once in a state
where an exposure dose target value is properly set (e.g. to the
minimum) at the time of starting exposure to a certain wafer W.
Further, by the selection of the ND filter, the scan velocity is
also finely adjusted to some extent.
[0098] A line width and a transfer position of a device pattern on
wafer W are deviated from design values due to each control error
of exposure dose, synchronous accuracy and focus. Then, in exposure
apparatus 100, time-series data of control amount related to
exposure dose error obtained from the exposure dose control system
(exposure dose trace data), time-series data of control amount
related to synchronous accuracy error obtained from the synchronous
control system (synchronous accuracy trace data), time-series data
of control amount related to focus error obtained from the focus
control system (focus trace data), and time-series data of control
amount related to lens control error obtained from the lens control
system of projection optical system PL (lens trace data) are
logged. The logged trace data are utilized for optimization of
parameters in analytical apparatus 170, as will be described
later.
[Wafer]
[0099] FIG. 3A shows an example of wafer W that becomes subject to
exposure in exposure apparatus 100. As is shown in FIG. 3A, on
wafer W, a device pattern is formed in a plurality of areas
SA.sub.p. Area SA.sub.p is also called a shot area. As is shown in
FIG. 3B, in each shot area SA.sub.p, wafer marks (MX.sub.p,
MY.sub.p) are arranged. The wafer mark (MX.sub.p, MY.sub.p) is a
mark with which position information can be detected from its shape
or the like. For example, in FIG. 3B, the wafer mark (MX.sub.p,
MY.sub.p) is shown as a line-and-space mark. As the shape of the
wafer mark, besides the line-and-space mark, a box mark or a cross
mark can be employed, or the wafer mark may also be a level
difference mark that is formed by unevenness of a base of the
wafer, or a bright-dark mark that is formed by difference of
reflectance.
[0100] In exposure apparatus 100, a device pattern on reticle R
needs to be accurately overlaid and exposed to shot areas SA.sub.p
on wafer W. In order to realize accurate overlay exposure, the
position of each shot area SA.sub.p needs to be known
accurately.
[0101] The wafer marks are arranged for knowing the position of
each shot area SA.sub.p (position of the center C.sub.p). Since the
wafer marks (MX.sub.p, MY.sub.p) are transferred and formed
together with the device pattern of shot area SA.sub.p where the
wafer marks are arranged, the positional relation between the wafer
marks and the shot area is substantially fixed, and when the
positions of the marks are obtained, the center position C.sub.p of
the shot area can be obtained.
[0102] Incidentally, wafer W, shot areas SA.sub.p and the wafer
marks (MX.sub.p, MY.sub.p) shown in FIGS. 3A and 3B are merely
examples, and the size, the number per shot area, the array state,
the shape and the like can appropriately be changed.
[0103] Referring back to FIG. 2, in exposure apparatus 100, an
alignment system ALG is arranged for measuring the positions of the
wafer marks (MX.sub.p, MY.sub.p). Alignment system ALG
photoelectrically detects unevenness of the base of wafer W or
distribution of reflectance in the vicinity of the wafer mark
(MX.sub.p, MY.sub.p), using an alignment sensor that is equipped
inside. A photoelectric conversion signal equivalent to the wafer
surface including the wafer mark (MX.sub.p, MY.sub.p) is obtained
by the photoelectric detection, and waveform data corresponding to
the photoelectric conversion signal can be obtained. Alignment
system ALG extracts a waveform (mark waveform) corresponding to the
wafer mark (MX.sub.p, MY.sub.p) from the detected waveform data,
and detects the position of the mark based on the extraction
results. Alignment system ALG computes the position of the wafer
mark (MX.sub.p, MY.sub.p) on the XY coordinate system based on the
detected position of the mark within the detection field and the XY
position of the detection field itself of the alignment sensor. In
exposure apparatus 100, the transfer position of the device pattern
is decided based on the computation results.
[0104] Incidentally, in order to perform accurate overlay exposure
of a device pattern, position information of all shot areas
SA.sub.p on wafer W may be measured. However, the throughput could
be affected by doing so. Thus, in exposure apparatus 100, the
global alignment technique is employed in which the wafer marks
that are actually measured are limited and the array of shot areas
SA.sub.p on the wafer (the shot array that is set by an
.alpha..beta. coordinate system in FIG. 3A) is statistically
estimated from position information of the measured wafer marks. In
exposure apparatus 100, as the global alignment, wafer alignment by
a so-called EGA method is employed in which the deviation of actual
shot array with respect to design shot array is expressed in a
polynomial with X and Y as independent variables, and valid
coefficients in the polynomial are obtained by performing
statistical computation. In the wafer alignment by the EGA method,
first, several shot areas SA.sub.p with which the wafer marks
subject to measurement are measured are selected. The selected shot
areas are called samples shots. Alignment system ALG measures the
positions of the wafer marks (sample marks) that are arranged with
the sample shots. Hereinafter, such measurement operation is
referred to as the EGA measurement.
[0105] In the wafer alignment by the EGA method, a correction
amount that indicates the XY position coordinate of each shot area
is estimated by statistical computation based on the measurement
results of the EGA measurement, that is, position information of
the several sample marks. Hereinafter, such computation is referred
to as the EGA computation. Incidentally, the wafer alignment by the
EGA method is disclosed in, for example, Kokai (Japanese Unexamined
Patent Application Publication) No. 61-044429 (the corresponding
U.S. Pat. No. 4,780,617) and the like.
[0106] The XY correction amount of the position of each shot area
that is obtained by the above-described polynomial is referred to
as the EGA correction amount. Since the coefficients of the
polynomial obtained in the wafer alignment by the EGA method are
obtained by the least-squares method, the difference (nonlinear
error component) remains between the actually measured value of the
mark position and the mark position corrected by the EGA correction
amount. The difference is called a residual error. As a matter of
course, the residual error is preferably smaller from the viewpoint
of the accuracy.
[0107] One of measures to be taken to reduce the residual error is
to heighten the order of the EGA polynomial model. For example,
when making the EGA polynomial model not be a primary expression
but be a quadratic expression or a cubic expression, the residual
error naturally becomes smaller. In the case the order of the
polynomial is heightened, however, the number of sample shots need
to be increased accordingly.
[0108] Further, in the case the measurement results of some sample
marks remarkably deviate from the actual shot array, the entire
residual error tends to be larger. Accordingly, the measurement
positions of such sample marks are preferably rejected so as not to
be used in the EGA computation. That is, it is also possible to
increase estimation accuracy by not using some of the positions of
sample marks obtained by the EGA measurement in the EGA
computation. Thus, the selection of the number and/or the placement
of sample marks is an important factor for the wafer alignment by
the EGA method.
[Alignment-Related Parameter]
[0109] In exposure apparatus 100, several factors that set the
operation related to wafer alignment by the EGA method using
alignment system ALG are parameterized, and the setting values
thereof can be adjusted as alignment-related parameters. The
alignment-related parameters are roughly divided into waveform
processing parameters that do not require re-measurement by the
alignment system for adjustment of the values, and
actual-measurement-required parameters that require the
re-measurement.
[0110] As the waveform processing parameters, for example, there is
the combination of sample marks (the number and/or positions of
sample marks) that are selected from the already measured sample
marks and are actually used for the EGA computation. In other
words, in the case all the measured sample marks are not used in
the EGA computation but the EGA computation is performed using the
appropriate combination of the sample marks out of the measured
sample marks, the combination becomes the waveform processing
parameter. Further, designation of sample marks to be rejected per
mark or per shot area, a reject limit value (a threshold that
serves as a datum when judging whether or not to reject a sample
mark from the EGA computation) at the time of mark detection, and
the like are included in the waveform processing parameters.
[0111] Further, in the case the alignment system is equipped with
plural types of alignment sensors and performs mark detection with
all the sensors, the type of alignment sensor that detects waveform
data used in actual detection of mark position (the FIA (Field
Image Alignment) method or the LSA (Laser Step Alignment) method)
is also included in the waveform processing parameters. Further,
processing conditions with respect to the waveform data, that is,
signal processing conditions (signal processing algorithm (an edge
extraction method, a template matching method, a loopback
autocorrelation method or the like, a slice level or the like) are
also included in the waveform processing parameters.
[0112] Further, the types of the EGA polynomial model (such as a
6-parameter model, a 10-parameter model, an inside-shot averaging
model, a shot factor indirect application model, and a high-order
EGA processing condition (usage order and usage correction
coefficient)), a weighted EGA processing condition, an extension
EGA processing condition of EGA optional function (such as an
inside-shot multipoint EGA implementing condition, an EGA
computation model, and a shot component correction condition), a
correction amount (such as an alignment correction value) to be
added to a measurement position of the measured mark, and the like
are also included in the waveform processing parameter. These
parameters used to express the shot array such as the EGA
polynomial model can also be classified into linear correction
parameters that correct a liner component of the shot array, and
nonlinear correction parameters that are used to correct a
nonlinear component of the shot array. Since a nonlinear component
of the shot array is expressed as a high-order function or a map of
the XY coordinate system in most cases, the nonlinear correction
parameter generally becomes the coefficient or a correction amount
on the map.
[0113] Further, in the actual-measurement-required parameters, the
types of sample marks (including the case where the mark shapes are
different), the number and/or the placement (in the case of
measuring new sample points), an illumination condition (such as an
illumination wavelength, a bright/dark field, illumination
intensity, or the existence/nonexistence of phase difference
illumination) when illuminating marks at the time of mark
measurement, a focus state (such as a focus offset) at the time of
mark detection, and the designation of an alignment sensor when
changing an alignment sensor to be used for mark detection, and the
like are included. In particular, the detected mark waveform
changes due to a resist film depending on the wavelength of
illumination light in some cases, the wavelength of illumination
light should carefully be set.
[0114] The control parameters and the alignment-related parameters
are not limited to those described above. Further, all the control
parameters and the alignment-related parameters are basically
variable. However, it is also possible that all the control
parameters and the alignment-related parameters are not made to be
variable but some of the parameters are made to be invariable
(fixed). When doing so, which parameters are made to be fixed can
be appropriately selected at a user's discretion.
[0115] As is described above, in exposure apparatus 100, as the
apparatus parameters, the control parameters and the
alignment-related parameters can be set. The setting values of
these parameters need to be adjusted beforehand to some extent so
that a device pattern on reticle R is favorably transferred onto
wafer W.
[0116] Main controller 20 is a computer system that controls
various constituents of exposure apparatus 100 as is described
above. Various operations of exposure apparatus 100 described above
are realized by overall control by main controller 20, and the
exposure dose control system, the synchronous control system, the
focus control system, the lens control system, and the like
described above are contained within main controller 20. Further,
main controller 20 is connected to a communication network that is
set up within device manufacturing system 1000, and data can be
sent to and received from the outside via the communication
network. Via the communication network, main controller 20 receives
the command and operates, or sends trace data of various control
errors to analytical apparatus 170, or receives information on
parameters that have been optimized by analytical apparatus 170 and
sets them inside.
[Liquid Immersion Exposure Apparatus]
[0117] Next, the configuration of exposure apparatus 101 will be
described. As is described earlier, exposure apparatus 101 is an
exposure apparatus that exposes wafer W via liquid (performs
exposure using so-called liquid immersion exposure techniques) in
order to improve the resolution by substantially shortening the
exposure wavelength and also to substantially widen the depth of
focus.
[0118] As is shown in FIG. 4 as an example, exposure apparatus 101
is equipped with an exposure apparatus main section S that performs
exposure processing to wafer W and a removal unit T that removes
liquid, foreign substances and the like that adhere to wafer W.
[0119] The configuration of exposure apparatus main section S shown
in FIG. 4 is substantially similar to the configuration of exposure
apparatus 100, and exposure apparatus main section S is equipped
with illumination system 10 that irradiates exposure light EL,
reticle stage RST that holds reticle R, a wafer stage WST' that
holds wafer W, projection optical system PL that projects a
projected image of a device pattern of reticle R that is
illuminated with exposure light EL on wafer W, and the like. The
structure of wafer stage WST' is slightly different from the
structure of wafer stage WST of exposure apparatus 100, as will be
described later. Further, although omitted in FIG. 4, main
controller 20 also performs the overall control of the inside of
exposure apparatus 101.
[0120] Further, as is shown in FIG. 5 that enlargedly shows part of
FIG. 4, besides, exposure apparatus main section S is quipped with
a liquid immersion system 19 and a liquid immersion monitor
260.
[0121] Wafer stage WST' has a holder 43 that alternatively holds
wafer W or liquid immersion monitor 260 by vacuum suction. Holder
43 is placed on the bottom surface of a recessed section 44 that is
formed on the surface on the +Z side of wafer stage WST'.
<<Liquid Immersion System>>
[0122] Liquid immersion system 19 forms an area (hereinafter, also
referred to as a "liquid immersion area") that is filled with
liquid LQ between projection optical system PL and wafer W. Herein,
as is shown in FIG. 5 as an example, liquid immersion system 19 is
quipped with a nozzle member 40, a supply pipe 13, a light source
for illumination 15 (not shown in FIG. 5, refer to FIG. 6), a
recovery pipe 23, a liquid supply unit 11, a liquid recovery unit
21, and the like.
[0123] Nozzle member 40 is an annular member that is arranged so as
to enclose an optical element FL that is closest to the image plane
of projection optical system PL among a plurality of optical
elements of projection optical system PL, and has a supply opening
12 for supplying liquid LQ to the space below optical element FL
and a recovery opening 22 for recovering liquid LQ in the liquid
immersion area that is formed by supplied liquid LQ between optical
element FL and wafer W on holder 43, as is shown in FIG. 6 as an
example. At recovery opening 22, for example, a mesh member made of
titanium or a porous member made of ceramics is placed. Further,
inside nozzle member 40, a flow channel 14 that connects supply
opening 12 and one end of supply pipe 13 and a flow channel 24 that
connects recovery opening 22 and one end of recovery pipe 23 are
formed. Incidentally, in the embodiment, as an example, pure water
is used as liquid LQ.
[0124] In the embodiment, among of a plurality of optical elements
of projection optical system PL, only optical element FL comes into
contact with liquid LQ.
[0125] Light source for illumination 15 is installed at a periphery
portion of the liquid immersion area, and illuminates the vicinity
of the liquid immersion area and optical element FL while liquid
immersion monitor 260 is operating.
[0126] Liquid supply unit 11 is connected to the other end of
supply pipe 13. Liquid supply unit 11 has a temperature adjustment
unit that adjusts the temperature of liquid LQ to be supplied, a
degassing unit that reduces gas components in liquid LQ to be
supplied, a filter unit that removes foreign substances in liquid
LQ to be supplied and the like, and sends out liquid LQ that is
clean and whose temperature has been adjusted. That is, liquid LQ
sent out from liquid supply unit 11 is supplied to the liquid
immersion area via supply pipe 13, flow channel 14 and supply
opening 12. Incidentally, liquid supply unit 11 is controlled by
main controller 20.
[0127] Liquid recovery unit 21 is connected to the other end of
recovery pipe 23. Liquid recovery unit 21 has an exhaust system
that includes a vacuum unit, and recovers liquid LQ. That is,
liquid LQ in the liquid immersion area is recovered by liquid
recovery unit 21 via recovery opening 22, flow channel 24 and
recovery pipe 23. Incidentally, liquid recovery unit 21 is
controlled by main controller 20.
[0128] Main controller 20 performs liquid supply by liquid supply
unit 11 and liquid recovery by liquid recovery unit 21 in parallel
at least while the exposure processing is being performed.
[0129] Meanwhile, as is shown in FIG. 7A as an example, sometimes
liquid LQ enters a boundary portion between a resist film RL and a
topcoat film TC. In this case, liquid LQ infiltrates inside the
resist and changes the resist performance, which could result in
deteriorating uniformity of an exposure pattern that will be
described later. Herein, topcoat film TC is a film that has liquid
repellency (water repellency in this case) to liquid LQ. Further,
as is shown in FIG. 7B as an example, sometimes a foreign substance
1B such as a particle or a watermark adheres on topcoat film TC. In
this case, a postbake (PEB: Post-Exposure-Bake) processing and a
development processing after exposure are affected even if exposure
is normally performed, which could generate defects such as break
of a device pattern that is formed on a wafer by exposure
(hereinafter, shortly referred to as an "exposure pattern" as
needed), or ununiformity of line width. Further, as is shown in
FIG. 7C as an example, sometimes foreign substances such as bubbles
BB and/or a particle PT exist in the liquid immersion area. In this
case, the optical path of exposure light EL changes, which could
generate defects of the exposure pattern. Further, the resist is
eluted into liquid LQ and contaminates optical element FL, which
could generate defects of the exposure pattern. Incidentally, there
is the possibility that bacteria comes into existence at the
members (such as supply pipe 13, and optical element FL) that are
in liquid LQ and/or come into contact with liquid LQ, and the
bacteria becomes one of foreign substances. Further, the reference
code HL in FIGS. 7A to 7C indicates an antireflection film.
[0130] The occurrence of the states shown in FIGS. 7A to 7C and the
like can be prevented to some extent by changing the temperature of
liquid LQ, increasing the flow speed of liquid LQ, tightening
processing conditions of filter processing when circulating liquid
LQ, or shortening a period of time for liquid immersion when the
same area on wafer W is immersed in liquid LQ by changing the
exposure route of shot areas SA.sub.p on wafer W (the route of
wafer stage WST' during the step-and-scan) or the like.
Accordingly, in liquid immersion exposure apparatus 101, the
processing conditions that affect these liquid immersion states are
parameterized and can be adjusted. Hereinafter, these parameters
are generally referred to also as liquid-immersion-related
parameters.
<<Liquid Immersion Monitor>>
[0131] In order to judge whether or not the
liquid-immersion-related parameters are appropriately set, liquid
immersion monitor 260 that monitors whether foreign substances are
contained in the liquid immersion area or not, and whether optical
element FL and the like are contaminated or not is needed. Herein,
as is shown in FIG. 8A and FIG. 8B as an example, liquid immersion
monitor 260 has a base material 261 that has the substantially same
outer shape as wafer W, a plurality of CCD sensor modules 262 that
are embedded on base material 261, a liquid immersion analytical
unit 263 that analyzes an output signal of each CCD sensor module
262 and wirelessly transmits the analytical results, and the like.
Liquid immersion analytical unit 263 has a flash memory in which
various programs to be used in liquid immersion analytical unit 263
are stored, a work memory and the like. Herein, in the center
portion of base material 261, one CCD sensor module 262 is
embedded, and four CCD sensor modules 262 are substantially
equiangularly embedded at the peripheral area of base material 261.
Incidentally, the analytical results at liquid immersion analytical
unit 263 are notified from liquid immersion analytical unit 263 to
main controller 20, exposure process management controller 160,
analytical apparatus 170, and the like.
[0132] The material of base material 261 only has to be the one
that hardly affect liquid LQ when coming into contact with liquid
LQ. For example, the material may also be the same as the material
of wafer W, or may also be metal such as titanium, or the material
containing fluorine resin such as PTFE or PFA. Further, in order to
apply water repellency to the surface of base material 261 that
comes into contact with liquid LQ, a film having water repellency
may also be formed on the surface.
[0133] As is shown in FIG. 9 as an example, each CCD sensor module
262 has six one-dimensional line sensors that have a longitudinal
direction in the X-axis direction. Herein, the one-dimensional line
sensors that are located from the -Y side end portion to the +Y
side end portion in order are referred to as line sensors 267A,
267B, 267C, 267D, 267E and 267F respectively. Further, in each line
sensor, a plurality of microlenses 264 that correspond to
respective photodetection sections are arranged.
[0134] The focal distances of microlenses 264 are different per
line sensor. That is, the distances to an observation subject
position (object plane position) are each different per line
sensor. And, the offset amount of the object plane position per
line sensor is set, taking into consideration the substantial depth
of focus in accordance with the detection resolution of foreign
substances. Herein, as is shown in FIG. 10 as an example, the
observation subject position of each of line sensors 267A, 267B,
267C, 267D, 267E and 267F is the position at a distance of d1, d2
(>d1), d3 (>d2), d4 (>d3), d5 (>d4) and d6 (>d5)
from the surface of base material 261, respectively. Thus, for
example, when the thickness (the length in the Z-axis direction) of
the liquid immersion area is around 3 mm, almost all of the liquid
immersion area can be inspected by setting d1=0.25 mm, d2=0.75 mm,
d3=1.25 mm, d4=1.75 mm, d5=2.25 mm and d6=2.75 mm.
[0135] For example, assuming that a diameter D of microlens 264 is
8 .mu.m and a focal distance f is 12.0 .mu.m, an F number becomes
1.5 (=f/D). When a white LED (a wavelength .lamda.: 560 nm) is used
as an illumination light source, a depth of focus becomes
.+-.0.61.lamda.F/NA=.+-.01.22.lamda.F.sup.2=.+-.1.54 .mu.m.
Incidentally, a center thickness t of microlens 264 (refer to FIG.
11) can be 2 to 3 .mu.m. In FIG. 11, the reference code 262A
indicates a CCD pixel, the reference code 262B indicates a transfer
electrode, the reference code 262C indicates a resin layer, and the
reference code 262D indicates an insulation layer.
[0136] Liquid immersion monitor 260 is housed in advance in a
predetermined position within exposure apparatus main section S,
and is set on holder 43 by a carrier unit 210 (refer to FIG. 5) as
is shown in FIG. 12 as an example, when performing a liquid
immersion monitor processing.
[0137] Meanwhile, there are an interline method, a frame interline
method and a frame transfer method for CCD (charge-coupled device)
depending on the structure that transfers signal charge. Either of
these methods may be used, but it is preferable to employ the frame
transfer method in which the large photodetection area size can be
used because the photodetection section also serves as the transfer
section.
[0138] Further, when it is assumed that a CCD pixel size Cs is 8.0
.mu.m (including 2.0 .mu.m of a dead zone), an effective pixel
number Cp of a line sensor is 4000 (32 mm length), and a CCD scan
data rate Cd is 25 nsec/pixel (=40 MHz), one line scan time Tc of
the line sensor becomes Cp.times.Cd=100 .mu.sec. Then, a stage scan
speed Sp at the time of liquid immersion monitoring becomes
Cs/Tc=80 mm/sec.
[0139] Incidentally, in liquid immersion monitor 260, each line
sensor may be formed on base material 261 using the
photolithography method, or a CCD sensor module that has been
created in advance may be embedded in the recessed portion formed
on base material 261.
<<Removal Unit>>
[0140] Removal unit T shown in FIG. 4 is a unit that removes liquid
LQ, foreign substances and the like (hereinafter, also described as
"liquid/foreign substance" for the sake of convenience) that adhere
to wafer W. Herein, as is shown in FIG. 13 as an example, removable
unit T has a stage unit 30, a holder 31 that holds wafer W by
vacuum suction, a rotation unit 32 that rotates and drives holder
31, a generating unit 60 that generates a flexure traveling wave
for moving liquid/foreign substance adhering to wafer W, a chamber
35, a liquid suction unit 39, an observation unit (now shown) that
observes the surface of wafer W, and the like. Sage unit 30, holder
31, rotation unit 32 and generating unit 60 are housed within
chamber 35. Incidentally, the observation results by the
observation unit are notified to main controller 20, measurement
and/or inspection instrument 120, analytical apparatus 170, and the
like.
[0141] Chamber 35 has an opening section 36 that is formed on the
wall surface on the +Y side and an opening section 37 that is
formed on the wall surface on the -Y side in FIG. 13. A shutter 36A
that Opens/closes opening section 36 is arranged at opening section
36, and a shutter 37A that opens/closes opening section 37 is
arranged at opening section 37. Wafer W to which liquid immersion
exposure has been performed is carried into chamber 35 via opening
section 36, and wafer W to which a removal processing of
liquid/foreign substance has been performed is carried outside
chamber 35 via opening section 37. The opening/closing of shutters
36A and 37A are controlled by main controller 20.
[0142] Liquid suction unit 39 is connected to chamber 35 via a flow
channel 38 at which a valve 38A is arranged. When valve 38A is in
an opened state, the liquid within chamber 35 is drained outside
chamber 35 by liquid suction unit 39. Incidentally, during the
liquid/foreign substance removal processing, valve 38A is in an
opened state.
[0143] Rotation unit 32 has a motor that is placed inside stage
unit 30 and an axis 33 that is rotated and driven by the motor. At
the upper end of axis 33, holder 31 is fixed. Rotation unit 32
rotates wafer W held on holder 31 via axis 33 by the motor.
Incidentally, holder 31 is drivable together with axis 33 in the
Z-axis direction, the .theta.x direction and the .theta.y direction
by a holder drive unit (not shown).
[0144] As is shown in FIG. 14 as an example, generating unit 60 has
an elastic stator 61 that is placed facing wafer W held on holder
31 and generates a flexure traveling wave, a oscillating body 62
that is placed on the surface on the +Z side of elastic stator 61
and includes a piezoelectric element that excites a flexure
traveling wave, a support member 63 that supports oscillating body
62, and a drive mechanism 64 that drives support member 63 in the
X-axis direction, the Y-axis direction, the Z-axis direction, the
.theta.X direction, the .theta.Y direction and the .theta.Z
direction. Drive mechanism 64 is controller by main controller 20.
That is, the distance between elastic stator 61 and wafer W, the
tilt angle of elastic stator 61 with respect to wafer W, the
position of elastic stator 61 with respect to wafer W within the XY
plane, and the like can be adjusted by main controller 20.
[0145] As is shown in FIG. 15 as an example, elastic stator 61 is
an elastic member having a roughly circular shape that is slightly
larger than wafer W. On the surface of elastic stator 61 on the -Z
side, water repellent coat is applied. Then, on the peripheral area
on the surface of elastic stator 61 on the +Z side, a piezoelectric
element 62A is placed in a ring-shaped arrangement so that a
desirable flexure traveling wave can be obtained. Incidentally,
elastic stator 61 may also have a ring shape.
[0146] The piezoelectric element of oscillating body 62 is
uniformly polarized in a direction of the thickness (the Z-axis
direction in this case), and a plurality of electrodes
(hereinafter, also referred to as an electrode group) are arranged
at a half-wave pitch of flexural oscillation. When the electric
signal of resonance frequency is input to the electrode group, a
standing wave of flexural oscillation is excited. With this
operation, as is shown in FIG. 16 as an example, a flexure
traveling wave B is generated and an acoustical field is generated
between elastic stator 61 and wafer W by flexure traveling-wave B.
Then, a liquid/foreign substance G adhering to wafer W is moved by
an acoustical viscous flow V in the acoustical field. In other
words, generating unit 60 can move liquid/foreign substance G
adhering to wafer W in a noncontact state with wafer W. Further,
when a recessed portion is formed on the surface of wafer W, even
if the liquid/foreign substance enters inside the recessed portion,
the liquid/foreign substance entering inside the recessed portion
can be taken out to the outside of the recessed portion. Herein, as
is shown in FIG. 17 as an example, flexure traveling wave B whose
traveling direction is a circumferential direction of elastic
stator 61 is generated. Thus, acoustical viscous flow V flows in a
circumferential direction of wafer W as its traveling direction.
Incidentally, the electrode group does not have to be arranged on
the entire surface of oscillating body 62, but may be arranged on a
part thereof. In this case, another electrode group is arranged and
set so that the phase difference of standing wave that is excited
by another electrode becomes .pi./2(=1/4 wavelength), thereby
exciting oscillation and generating a flexure traveling wave.
[0147] When inclining holder 31 along with the generation of
flexure traveling wave B, the liquid/foreign substance adhering to
wafer W can be favorably removed by the synergistic action between
the action of gravity and the action by the flexure traveling
wave.
[0148] Further, when rotating wafer W along with the generation of
flexure traveling wave B, the centrifugal force is added, which
makes it possible to better move the liquid/foreign substance
adhering to wafer W. In this case, as is shown in FIG. 18 as an
example, when making a rotation direction PR of wafer W coincide
with a traveling direction of flexure traveling wave B, the
direction of acoustical viscous flow V and the direction of
centrifugal force substantially coincide, which makes it possible
to favorably remove the liquid/foreign substance adhering to wafer
W, even if wafer W is rotated at a relatively low speed. Thus, it
becomes possible to reduce the burden to wafer W, reduce the
electric power consumption of rotation unit 32, suppress the heat
generation of rotation unit 32, and decrease the size of rotation
unit 32.
[0149] Meanwhile, the generation start of flexure traveling wave B
and the rotation start of wafer W may be performed substantially at
the same time, or the generation of flexure traveling wave B may be
started after starting the rotation of wafer W. However, for
example, when the liquid/foreign substance enters inside a recessed
portion formed on the surface of wafer W, the rotation of wafer W
may be started after a predetermined period of time elapses from
the generation start of flexure traveling wave B. In this case,
after the liquid/foreign substance that enters inside the recessed
portion is once moved to the outside of the recessed portion by
flexure traveling wave B, the liquid/foreign substance can be
removed from the surface of wafer W by the rotation of wafer W.
[0150] Incidentally, in the case the liquid/foreign substance
adheres near the center of wafer W, as is shown in FIG. 19 as an
example, the rotation center of wafer W and the center of elastic
stator 61 may be displaced.
[0151] Further, the rotation of wafer W and the tilt of wafer W may
be used in combination. By using them in combination, the
liquid/foreign substance adhering to wafer W can be removed further
favorably.
[0152] Then, the liquid removed from wafer W is drained outside
chamber 35 by liquid suction unit 39. Accordingly, the humidity
within chamber 35 does not fluctuate greatly. Also, the humid gas
is not discharged outside chamber 35 when opening shutter 36A and
shutter 37A.
[0153] Incidentally, instead of elastic stator 61, a
rectangular-plate-shaped elastic stator 161A that has the surface
on the -Z side on which a plurality of gas outlets 71 are formed
may be used, as is shown in FIG. 20A and FIG. 20B as an example. In
this case, a gas supply unit (omitted in the drawing) that blows
gas k from a plurality of gas outlets 71 toward the surface of
wafer W is further arranged. Herein, a gas outlet group arranged in
a line in the Y-axis direction is to be one block, and blocks are
to be a first block Ba1, a second block Ba2, a third block Ba3, . .
. , and a seventeenth block Ba17 from the -X direction end portion
toward the +X direction in order. Then, in accordance with
traveling of flexure traveling wave B, gas blowing from first block
Ba1 is started, next, gas blowing from second block Ba2 is started,
and subsequently, gas blowing from third block Ba3, . . . , and
seventeenth block Ba17 is started in order. Further, when a
predetermined period of time elapses after starting gas blowing
from first block Ba1, the gas blowing from first block Ba1 is
stopped. Similarly, when a predetermined period of time elapses
after starting gas-blowing from second block Ba2, the gas blowing
from second block Ba2 is stopped. Afterwards, in the similar
manner, the gas blowing from the block is stopped after a
predetermined period of time elapses after starting the gas
blowing. With this operation, it becomes possible to remove the
liquid/foreign substance adhering to wafer W in a shorter period of
time. Incidentally, the number of blocks is not limited to 17. In
this case, wafer W and elastic stator 161A may be tilted in the
traveling direction of flexure traveling wave B.
[0154] Further, instead of elastic stator 61, a
rectangular-plate-shaped elastic stator 161B that has the surface
on the -Z side on which a plurality of suction openings 81 are
formed may be used, as is shown in FIG. 21A and FIG. 21B as an
example. In this case, a suction unit (omitted in the drawing) that
suctions liquid or the like adhering to the surface of wafer W from
a plurality of suction openings 81 is further arranged. Herein, a
suction opening group arranged in a line in the Y-axis direction is
to be one block, and blocks are to be a first block Bb1, a second
block Bb2, a third block Bb3, . . . , and a seventeenth block Bb17
from the -X direction end portion toward the +X direction in order.
Then, in accordance with traveling of flexure traveling wave B,
suction by first block Bb1 is started, next, suction by second
block Bb2 is started, and subsequently, suction by third block Bb3,
. . . , and seventeenth block Bb17 is started in order. Further,
when a predetermined period of time elapses after starting suction
by first block Bb1, the suction by first block Bb1 is stopped.
Similarly, when a predetermined period of time elapses after
starting suction by second block Bb2, the suction by second block
Bb2 is stopped. Afterwards, in the similar manner, the suction by
the block is stopped after a predetermined period of time elapses
after starting the suction. With this operation, it becomes
possible to remove the liquid/foreign substance adhering to wafer W
in a shorter period of time. Incidentally, the number of blocks is
not limited to 17. In this case, wafer W and elastic stator 161B
may be tilted in the traveling direction of flexure traveling wave
B.
[0155] Further, instead of liquid suction unit 39 or together with
liquid suction unit 39, a drying unit that supplies dry gas into
chamber 35 may also be arranged. With the drying unit, removal of
liquid LQ adhering to wafer W can be enhanced.
[0156] Several processing conditions of removal unit T are also
parameterized, and removal unit T is designed so that the
processing state of liquid removal processing changes depending on
the values of the parameters. Removal unit T may also be arranged
within track 200B of liquid immersion exposure apparatus 101.
[Track]
[0157] Referring back to FIG. 1, tracks 200A and 200B are placed so
as to have contact with a chamber (not shown) that encloses
exposure apparatus 100 or 101. Tracks 200A and 200B perform
carrying-out and carrying-in of wafer W mainly from/to exposure
apparatuses 100 and 101 by a carrier line that is equipped inside
tracks 200A and 200B.
[Coater Developer]
[0158] Within tracks 200A and 200B, a coater-developer (C/D) 110
that is equipped with a coater that performs a resist coating
processing, a developer that performs a development processing, a
PEB unit that performs a PEB processing, and the like is arranged.
C/D 110 can observe the processing states of resist coating,
development, PEB processings, and record the observation data as
log data. As the processing states that can be observed, for
example, each state of the rotation speed of a spin coater, the
temperature during development, a development module processing,
the temperature uniformity of PEB (hotplate temperature
uniformity), and the wafer heating history management (to avoid
overbake after the PEB processing, a cooling plate) can be cited.
The processing state of C/D 110 can also be adjusted to some extent
by setting the apparatus parameters. As such apparatus parameters,
for example, there are a parameter that can correct the thickness
of resist on wafer W (a dripping quantity and a dripping interval
of resist), the set temperature within the apparatus, the rotation
speed of a spin coater, and the like.
[0159] C/D 110 can operate independently from the external
apparatuses such as exposure apparatuses 100 and 101, and
measurement and/or inspection instrument 120. C/D 110 is placed
along the carrier line within tracks 200A and 200B, and by the
carrier line, wafer W can be carried between exposure apparatuses
100 and 101, C/D 110, and the outside of tracks 200A and 2008.
Further, C/D 110 is connected to a communication network within
device manufacturing system 1000 and data transmission with the
outside is possible.
[0160] In other words, exposure apparatus 100 and C/D 110 within
track 200A, and exposure apparatus 101 and C/D 110 within track
200B are inline connected to each other, respectively. Herein, the
inline connection means the connection between the apparatuses, and
between processing units within each apparatus via a carrier unit
that performs automating transport of wafer W such as a robot arm
or a slider. By the inline connection, a period of time required
for delivery of wafer W between exposure apparatus 100 and C/D 110,
or between exposure apparatus 101 and C/D 110 can be remarkably
shortened.
[0161] Exposure apparatus 100 and track 200A that are inline
connected and exposure apparatus 101 and track 200B that are inline
connected can be considered as one substrate processing apparatus
(100, 200A) or (101, 200B) as a unit. To wafer W, the substrate
processing apparatus (100, 200A) or (101, 200B) performs a coating
process of coating photosensitive agent such as photoresist, an
exposure process of projecting and exposing an image of a pattern
of a mask or reticle R on wafer W which is coated with
photosensitive agent, a PEB process after finishing the exposure
process, a development process of developing wafer W after that,
and the like. Exposure cell 700 can be regarded to be quipped with
one substrate processing apparatus (100, 200A) and one substrate
processing apparatus (101, 200B).
[Measurement and/or Inspection Instrument]
[0162] Measurement and/or inspection instrument 120 is a composite
measurement and/or inspection instrument that can perform various
types of measurement and/or inspection to wafer W. Measurement
and/or inspection instrument 120 is equipped with a stage that
holds wafer W similar to wafer stage WST in exposure apparatus 100.
The XY position of the stage is measured by an interferometer (not
shown) as in the case of wafer stage WST. The controller of
measurement and/or inspection instrument 120 controls the XY
position of the stage based on the measurement position of the
interferometer. For measurement and/or inspection of wafer W, first
of all, the alignment of wafer W is necessary. Measurement and/or
inspection instrument 120 can position wafer W as in the case of
exposure apparatus 100 or 101, and is quipped with an alignment
system that is similar to alignment system ALG of exposure
apparatus 100. The alignment of wafer W in measurement and/or
inspection instrument 120 can be performed under alignment-related
parameters that are similar to those of exposure apparatus 100 or
101.
[0163] Besides, measurement and/or inspection instrument 120 is
equipped with the following sensors to perform measurement and/or
inspection that will be described below.
[0164] (1) Measurement and/or Inspection of an Antireflection Film,
a Photoresist Film and a Topcoat Film on Wafer W (Film Thickness,
Peeling of Film)
[0165] An interferometer that can measure the film thickness of
each film
[0166] (2) Measurement of Wafer Marks (MX.sub.p, MY.sub.p) on Wafer
W
[0167] The alignment system described above (by an image processing
method) similar to alignment system ALG of exposure apparatus 100
or 101
[0168] (3) Measurement of Surface Shape of Wafer W (So-Called Shot
Flatness (Device Topography, Focus Level Difference))
[0169] A multipoint AF sensor that matches the multipoint AF sensor
in exposure apparatus 100 or 101
[0170] (4) Inspection of Foreign Substances and/or Stains on Wafer
W
[0171] An alignment system (a sensor by an image processing method)
or a sensor by a laser scan method
[0172] (5) Measurement of Line Width and Overlay Error of a Pattern
Formed on Wafer W
[0173] A high-powered imaging device that can pick up an image of a
device pattern
[0174] (6) Pattern Defects on Wafer W
[0175] An imaging device or a sensor by a laser scan method
[0176] Measurement and/or inspection instrument 120 can operate
independently from exposure apparatuses 100 and 101, and C/D 110.
Carrier line 140 within exposure cell 700 can carry wafer W one by
one between exposure apparatus 100 or 101, C/D 110 and measurement
and/or inspection instrument 120. Further, measurement and/or
inspection instrument 120 can input/output data via a communication
network.
[Device Manufacturing Apparatus Group]
[0177] As device manufacturing apparatus group 900, a film forming
apparatus 910, an oxidation/ion-implantation apparatus 920, an
etching apparatus 930, a CMP (Chemical Mechanical Polishing)
apparatus 940 that performs a processing of planarizing wafer W by
performing chemical mechanical polishing, and the like are
arranged. Film forming apparatus 910 is an apparatus that forms a
thin film such as an antireflection film and a topcoat film on
wafer W using CVD (Chemical Vapor Deposition) or the like.
Oxidation/ion-implantation apparatus 920 is an apparatus used to
form an oxide film on the surface of wafer W or implant impurities
in a predetermined position on wafer W. Etching apparatus 930 is an
apparatus that performs etching to developed wafer W. CMP apparatus
940 is a polishing apparatus that planarizes the surface of the
wafer by chemical mechanical polishing. The processing state of
each apparatus can be adjusted by adjustment of the processing
parameters thereof, and also each apparatus can observe the
processing state and can log data related to the processing state
as log data. Further, each apparatus can input/output data via a
communication network.
[0178] Between film forming apparatus 910,
oxidation/ion-implantation apparatus 920, etching apparatus 930 and
CMP apparatus 940, a carrier route in which wafer W can be carried
between them is arranged. Besides these apparatuses, device
manufacturing apparatus group 900 includes apparatuses that perform
a probing processing, a repair processing, a dicing processing, a
packaging processing, a bonding processing and the like.
[Carrier Line]
[0179] Carrier line 800 performs carriage of wafer W between
various units in device manufacturing apparatus group 900 and
exposure cell 700. Wafer W is carried from the apparatus that
finishes a processing to wafer W to the apparatus that is to
perform a processing to wafer W next, by concerted operation
between carrier line 800 and carrier line 140 within exposure cell
700.
[Management Controller]
[0180] Management controller 160 intensively controls an exposure
process that is implemented by exposure apparatus 100 or 101, and
also performs management of C/D 110 within tracks 200A and 200B and
control of their cooperative operation. As such a controller, for
example, a personal computer (PC) can be employed. Management
controller 160 receives information that shows the progress of
processings and operations, information that shows processing
results, measurement and/or inspection results and the like from
each apparatus through the communication network within device
manufacturing system 1000, grasps the status of the entire
manufacturing line of device manufacturing system 1000, and
performs management and control of each apparatus so that the
exposure process and the like are appropriately performed.
[Analytical Apparatus]
[0181] Analytical apparatus 170 is connected to the communication
network within device manufacturing system 1000 and can perform
data transmission with the outside. Analytical apparatus 170
collects various types of data (data of various measurement and/or
inspection results of measurement and/or inspection instrument 120
and data related to processing states of other apparatuses) via the
communication network, and performs analysis of data related to
processes to wafer W and optimization of processing conditions of
each apparatus. As hardware to realize such analytical apparatus
170, for example, a personal computer can be employed. In this
case, the analytical processing is realized by the execution of an
analytical program that is executed by the CPU (not shown) of
analytical apparatus 170. The analytical program is supplied by
media (information recording medium) such as CD-ROM and executed in
a state of being installed on the PC.
[0182] Analytical apparatus 170 compositely analyzes log data of
exposure apparatus 100 and at least two types of measurement and/or
inspection results in measurement and/or inspection instrument 120,
and based on the analytical results, performs optimization of the
processing conditions of various apparatuses. Herein, the
processing conditions to be optimized differ depending on the
analytical results, and are varied such as the control system
parameters of exposure apparatus 100, the alignment-related
parameters, the liquid-immersion-related parameters and a liquid
immersion removal processing condition, processing conditions for
the resist coating processing, the postbake (PEB) processing and
the development processing in C/D 110, a measurement and/or
inspection condition of measurement and/or inspection instrument
120, processing conditions of various apparatuses in device
manufacturing apparatus group 900, and the like.
[0183] Further, analytical apparatus 170 has databases related to
the measurement and/or inspection results of measurement and/or
inspection instrument 120 and the processing contents of various
apparatuses. One of the databases that are quipped in analytical
apparatus 170 is a CD table group. The CD table group is a database
that shows a relation between a pattern line width and each control
error of an exposure dose, synchronous accuracy, focus and a lens.
In the CD table group, a relation between the statistical value of
each control error of an exposure dose, synchronous accuracy, focus
and a lens in a period from when exposure area IA reaches a certain
point on wafer W until when exposure area IA passes the certain
point during relative synchronous scanning of wafer stage WST or
WST' and reticle stage RST, and a line width of the certain point
is stored.
[0184] The statistical value of each control error at a certain
point (sample point) on the wafer can be computed based on the
exposure dose trace data, synchronous accuracy trace data, focus
trace data, lens trace data that are acquired from exposure
apparatuses 100 and 101.
[0185] As will be described later, analytical apparatus 170 can
estimate the pattern line width based on the statistical values of
control errors of the exposure dose, the synchronous accuracy or
the focus, referring to the CD table group as needed. Incidentally,
in the case the statistical value of control error of the exposure
dose, the synchronous accuracy or the focus is a value that is not
registered as a line-width estimated value, the pattern line width
can be estimated by interpolation of several values that are
nearest to the value.
[0186] In order to effectively estimate the pattern line width
based on the CD table group, the relation between the statistical
values of various control errors and the pattern width needs to be
registered in advance. When performing the registration, the
statistical value of each control error that is computed from the
trace data during exposure by the exposure apparatus (100, 101) to
wafer W and the pattern line width that is measured by measurement
and/or inspection instrument 120 only have to be actually stored in
the table group. Incidentally, the pattern line width registered in
the CD table group may be not based on the measurement results of
measurement and/or inspection instrument 120, but may be based on
the values measured by the SEM or the values measured by the OCD
method or the like, or may be the values that are obtained from an
aerial image of a test pattern that is measured by an aerial image
sensor that measures an aerial image of the test pattern.
[0187] Incidentally, even with the completely same exposure dose
error, synchronous accuracy error, focus error and lens error, the
pattern line width differs depending on the exposure conditions of
exposure apparatus 100 or 101 and the design conditions of a
pattern to be transferred. Therefore, the table group is prepared
for each exposure condition and each pattern design condition. In
this manner, it is necessary to compile a database of the table
groups beforehand so that an estimated value of pattern line width
can be searched using the exposure condition, the pattern design
condition, the exposure dose error, the synchronous accuracy error,
the focus error as keys. Incidentally, as the exposure conditions,
there are an exposure wavelength, projection optical system NA,
illumination NA, illumination .sigma., illumination types, depth of
focus and the like, and as the pattern design conditions, there are
mask line width, target line width (e.g. 130 nm), pattern pitch,
mask types (binary, halftone, Levenson), pattern types (an isolated
line, a line-and-space pattern) and the like. The relation between
these exposure conditions and pattern design conditions and the
pattern line width, and the setting method of other conditions such
as an image height in the table are disclosed in detail in, for
example, Kokai (Japanese Unexamined Patent Application Publication)
No. 2001-338870.
[0188] The CD table group is used for optimization of parameters
related to pattern line width in analytical apparatus 170. For
example, when obtaining the combination of
exposure-dose-control-related, synchronous-control-related,
focus-control-related and lens-control-related system parameters,
or the illumination condition as a precondition, or the like which
makes the line width be closer to the design value, the CD table
group is referred to.
[0189] In addition, analytical apparatus 170 is equipped with a
database to store analytical results.
[Overall Control by Host]
[0190] As is described earlier, host 600 performs the overall
control of device manufacturing system 1000, and each apparatus in
device manufacturing system 1000 operates according to instructions
from host 600. In the following description, the operation of the
individual apparatus will be described.
[Operation of Exposure Apparatus]
[0191] FIG. 22 shows a flow of operations of exposure apparatuses
100 and 101. As is shown in FIG. 22, first of all, host 600 outputs
an exposure instruction for a certain wafer W to management
controller 160 (step 201). In the exposure instruction, the
designation of exposure recipe of the wafer W is also included.
Management controller 160 judges whether or not a layer subject to
exposure this time is a layer that requires high transfer accuracy
(e.g. a layer where a contact hole is formed) referring to the
exposure recipe, and transmits a processing start order to liquid
immersion exposure apparatus 101 in the case the layer requires
high transfer accuracy, or transmits a processing start order to
dry exposure apparatus 100 if this is not the case (step 203).
[0192] When receiving the processing start order, dry exposure
apparatus 100 loads relevant reticle R referring to the designated
exposure recipe, and performs preparatory operations such as
reticle alignment and baseline measurement (step 205). Then, after
roughly aligning wafer W, dry exposure apparatus 100 loads wafer W
on wafer stage WST (step 207). Next, dry exposure apparatus 100
measures search alignment marks and wafer marks (MX.sub.p,
MY.sub.p) that are formed on wafer W using alignment system ALG and
performs alignment of wafer W (step 209). Then, dry exposure
apparatus 100 performs exposure by a step-and-scan method (step
211). After the exposure, dry exposure apparatus 100 unloads wafer
W (step 213).
[0193] On the other hand, when receiving the processing start
order, liquid immersion exposure apparatus 101 loads relevant
reticle R referring to the designated exposure recipe and performs
preparatory operations such as reticle alignment and baseline
measurement (step 205'). Then, after roughly aligning wafer W,
liquid immersion exposure apparatus 101 loads wafer W on wafer
stage WST' (step 207'). Next, liquid immersion exposure apparatus
101 measures wafer marks (MX.sub.p, MY.sub.p) formed on wafer W
using alignment system ALG and performs wafer alignment (step
209'). Then, liquid immersion exposure apparatus 101 performs
exposure to wafer W by driving wafer stage WST' in a predetermined
route and synchronously scanning reticle stage RST appropriately
(step 211'). After the exposure, liquid immersion exposure
apparatus 101 unloads wafer W (step 213') and then performs a
liquid removal processing of wafer W using removal unit T (step
215'). Incidentally, although not shown in FIG. 22, monitoring by
liquid immersion monitor 260 is also performed as needed.
[0194] After completing all the processings described above, dry
exposure apparatus 100 or liquid immersion exposure apparatus 101
transmits a processing end notice to management controller 160
(step 217). Management controller 160 notifies the exposure end to
host 600. (step 219).
[0195] FIG. 23 shows a flow of operations of C/D 110. As is shown
in FIG. 23, first of all, host 600 transmits a processing start
instruction to management controller 160 (step 271). Management
controller 160 transmits a processing start order to C/D 110 (step
237). In the processing start order, information on the processing
contents (resist coating, development and postbake) to be performed
to wafer W is included. C/D 110 loads wafer W on a stage of a unit
that performs a processing to be performed, for example, the
coater, the developer or the postbake unit (step 275). Then, C/D
110 performs the ordered processing (resist coating, postbake,
development) to wafer W (step 277). After the processing, C/D 110
unloads wafer W (step 279). C/D 110 transmits a processing end
notice to management controller 160 (step 281), and management
controller 160 transmits the processing end notice to host 600
(step 283).
[0196] FIG. 24 shows a flow of operations of each apparatus of
device manufacturing apparatus group 900. The flow of operations of
each apparatus of device manufacturing apparatus group 900 shown in
FIG. 24 is substantially the same as the flow of operations of C/D
110 shown in FIG. 23. That is, each apparatus that receives a
processing start order from host 600 (step 301) loads wafer W (step
303), performs a predetermined processing to wafer W (step 305),
unloads the wafer W (step 307) and sends a processing end notice to
host 600 (step 309).
[0197] FIG. 25 shows a flow of processings of host 600 and
measurement and/or inspection instrument 120. Host 600 sends a
processing start order to measurement and/or inspection instrument
120 (step 351). Next, measurement and/or inspection instrument 120
loads wafer W (step 353). Then, measurement and/or inspection
instrument 120 sends a request for transmission of measurement
and/or inspection content information to host 600 (step 355), and
host 600 transmits information of measurement and/or inspection
contents to measurement and/or inspection instrument 120 (step
356). The measurement and/or inspection contents include, for
example, information with which whether or not wafer W has been
exposed by liquid immersion exposure can be identified, besides
measurement and/or inspection contents such as inspection of films
on wafer W, detection of wafer marks, appearance inspection of
foreign substances, stains or the like, line width measurement, and
measurement of overlay error. Next, measurement and/or inspection
instrument 120 judges whether or not loaded wafer W has been
exposed by liquid immersion exposure, referring to information such
as IC chip (IC tag) embedded in wafer W or barcode, or measurement
and/or inspection content information sent from host 600 (step
357). When the judgment is affirmed, the procedure proceeds to step
359, and when the judgment is denied, the procedure proceeds to
step 361. In the embodiment, the measurement and/or inspection
contents of measurement and/or inspection instrument 12 are changed
between liquid immersion exposure and dry exposure. Then, in step
359, the processing contents of the apparatus and the like are set
so that measurement and/or inspection is performed under the
measurement and/or inspection conditions for liquid immersion
exposure, and in step 361, the processing contents of the apparatus
and the like are set so that measurement and/or inspection is
performed under the measurement and/or inspection conditions for
dry exposure. In this manner, the measurement and/or inspection
contents in measurement and/or inspection instrument 120 are
different between dry exposure and liquid immersion exposure. The
inspection conditions in liquid immersion exposure will be
described next.
[0198] First, in the case of wafer W that is exposed in a liquid
immersion exposure method, as is shown in FIGS. 7A to 7C, since
topcoat film TC is formed on resist film RL, measurement and/or
inspection of topcoat film TC is added to the measurement and/or
inspection contents in the case of liquid immersion exposure.
[0199] Further, since the size of a pattern formed by liquid
immersion exposure is smaller than the size of a pattern formed by
dry exposure in general, the required accuracy for pattern line
width and overlay error are to be set higher. For example, when
measuring the pattern line width or the overlay error by the image
processing method, the magnification of image data only has to be
set larger, or the pixel size only has to be changed in a direction
of increasing the detection sensitivity.
[0200] Regardless of the detection method, in the case of
measurement and/or inspection in liquid immersion exposure, the
sensitivity of the pattern defect is preferably set higher than
that in the case of dry exposure. This is because the size of a
pattern formed by liquid immersion exposure is smaller as is
described above, and therefore, the size of the defect of the
pattern that affects the yield is also relatively smaller.
[0201] Further, in the case the wavelength of illumination light
that illuminates wafer W in measurement and/or inspection
instrument 120 can be selected, the shorter wavelength is
preferably selected. For example, when the selectable range of
wavelengths is 260 nm to 500 nm, the wavelength of illumination
light is set to 260 nm in the measurement and/or inspection in
liquid immersion exposure.
[0202] Further, when either one of an optical method and an
electron beam (EB) method can be selected as a detection method of
a pattern defect, the EB method is preferably selected. Further,
when the bright field and the dark field can be selected, the
bright field is preferably selected because films on wafer W are
formed in multi layers in liquid immersion exposure. Further, when
the detection method is the optical method and a layer having a
high level difference is a target, a confocal system is preferably
selected in the case the confocal system can be selected as the
optical system.
[0203] Further, in the case an image comparison algorithm, a design
data comparison algorithm, a feature extraction algorithm and the
like can be selected as a detection algorithm of a pattern defect,
the image comparison algorithm or the feature extraction algorithm
is preferably selected. Herein, the image comparison algorithm is
an algorithm in which a pattern defect is extracted by, for
example, comparing image data of two shot areas in which the same
device pattern should have been formed are compared by die-to-die
or cell-to-cell. Further, the design data comparison algorithm is
an algorithm in which a pattern defect is extracted by, for
example, comparing a line width of a pattern that is extracted from
image data of a device pattern with the value in design thereof.
Further, the feature extraction algorithm is an algorithm in which
a feature included in image data of a device pattern is extracted
and a pattern defect is extracted from the feature.
[0204] Further, in the case detection of foreign substances by a
laser scan method or the like is performed, the sensitivity, the
number and the angle of a photomultiplier that detects the
scattered light can also be adjusted.
[0205] Further, at the time of liquid immersion exposure, detection
processings are added and/or changed as will be described below.
[0206] (1) Inspection of pattern defects peculiar to liquid
immersion [0207] (2) Inspection of watermarks, stains due to
exuding of a resist component, resist peeling and the like [0208]
(3) Inspection of particles/foreign substances adhering to the
remaining liquid that is left on wafer W [0209] (4) Intensive
inspection of points at which the liquid immersion state is
expected to be unfavorable
[0210] Among the inspections referred to above, the inspection of
pattern defects peculiar to liquid immersion in (1) is important.
In the state as is shown in FIG. 7A where liquid LQ and a foreign
substance (bubble, particle) enters into a boundary portion between
resist film RL and topcoat film TC, in the state as is shown in
FIG. 7B where foreign substance IB such as a particle or a
watermark adheres on topcoat film TC, in the state as is shown in
FIG. 7C where a foreign substance such as bubbles BB and/or
particle PT exists in the liquid immersion area, and besides, in a
state where a part of topcoat film TC is peeled off, sometimes a
pattern that is foreign to a device pattern appears on the wafer
surface due to the state, after the PEB processing.
[0211] FIG. 26A shows an example of an image showing a pattern
defect peculiar to liquid immersion. In FIG. 26A, the line width of
part of the linear device pattern becomes thinner due to the
above-described liquid immersion states shown in FIGS. 7A to 7C.
When extracting the pattern defect portion by obtaining the
difference between the image data in FIG. 26A and image data
corresponding to an original device pattern (design pattern), a
circular pattern appears as is shown in FIG. 26B. In this manner,
in liquid immersion exposure, when the exposure state deteriorates,
a pattern that is completely irrelevant to a device pattern and is
peculiar to liquid immersion appears due to the foreign substance,
the bubble, or the watermark, and therefore, measurement and/or
inspection instrument 120 needs to inspect whether or not such a
pattern is formed. In order to detect such a pattern peculiar to
liquid immersion, a composite processing may also be performed by
using the combination of plural types of algorithms such as the
feature extraction algorithm and the image comparison algorithm as
described above.
[0212] Further, for example, in the case of the defect due to the
bubble, there are the characteristics that a circular bright
section exists in the vicinity outside the bubble, and inside the
bubble, a dark section serves as a base and a pattern different
from that in the vicinity appears. Further, as a peculiar pattern
due to the watermark, a pattern like a dark mass is entirely
formed.
[0213] Further, the intensive inspection of points at which the
liquid immersion state is expected to be unfavorable in (4) is also
important.
[0214] In other words, when performing exposure to shot areas
SA.sub.p near the wafer outer circumference, the liquid immersion
area protrudes from wafer W, and sometimes a pattern defect occurs
frequently in these shot areas since the state in these shot areas
is different from the case where shot areas in the center portion
of wafer W are exposed. Thus, in the case of liquid immersion
exposure, it can be considered that pattern defect inspection near
the outer circumference is performed more intensively than near the
center of wafer W.
[0215] Moreover, in liquid immersion exposure, it is known that the
temperature of wafer W is lowered due to volatilization of liquid
from the wafer W surface and the like, and the deformation degree
of wafer W becomes larger than that in dry exposure and the wafer
scaling fluctuates. Therefore, regarding the overlay error
measurement of a device pattern, the measurement frequency for the
outer circumference of wafer W may also be increased.
[0216] Further, in liquid immersion exposure, it can be said that
measurement of distortion of shot area itself (shot distortion),
measurement of aberration of projection optical system PL and the
like are preferably set to be performed frequently.
[0217] Referring back to FIG. 25, after the measurement and/or
inspection conditions are set in step 359 or 361, measurement
and/or inspection is performed under the set measurement and/or
inspection conditions (step 363). In the next step, step 365,
measurement and/or inspection instrument 120 sends the measurement
and/or inspection results to host 600. In the next step, step 367,
measurement and/or inspection instrument 120 unloads wafer W. In
the next step, step 369, measurement and/or inspection instrument
120 returns a processing end notice to the host.
[0218] FIG. 27 shows a flow of processings of host 600 and
analytical apparatus 170. Host 600 sends an analysis order to
analytical apparatus 170 (step 401). The analysis order includes
specific analysis contents that are to be analyzed in the
analytical apparatus. Next, analytical apparatus 170 reads the
analysis contents and requests measurement and/or inspection
instrument 120 for a measurement and/or inspection result (No. 1)
required for the analysis (step 403). Measurement and/or inspection
instrument 120 sends measurement and/or inspection result data (No.
1) to analytical apparatus 170 (step 405). Incidentally, the
measurement and/or inspection result data also includes information
on measurement and/or inspection conditions, besides the
measurement and/or inspection results. Furthermore, analytical
apparatus 170 requests measurement and/or inspection instrument 120
for a measurement and/or inspection result (No. 2) required for
analysis (step 407). Measurement and/or inspection instrument 120
sends measurement and/or inspection result data (No. 2) to
analytical apparatus 170 (step 409). Incidentally, the measurement
and/or inspection result data also includes information on
measurement and/or inspection conditions, besides the measurement
and/or inspection results.
[0219] Next, analytical apparatus 170 performs an analytical
processing (step 411). When, performing the analytical processing,
analytical apparatus 170 requests the processing apparatus such as
exposure apparatus 100 or 101 for transmission of processing
contents data required for the analysis, as needed. The processing
apparatus that receives the request transmits the processing
contents data to analytical apparatus 170. After finishing the
analytical processing, analytical apparatus 170 performs an
accumulation processing of accumulating the collected measurement
and/or inspection results and data of analytical results in a
database (step 413). Next, analytical apparatus 170 sends the
analytical results (optimization results) to the processing
apparatus such as measurement and/or inspection instrument 120
and/or exposure apparatus 100 or 101, as needed (step 415).
Finally, analytical apparatus 170 returns a processing end notice
to host 600 (step 417).
[0220] As is described above, host 600 uses the control operation
to each apparatus shown in FIGS. 22 to 25 and FIG. 27 as one
processing unit to make each apparatus operate and execute a series
of processes. Incidentally, these operations are merely examples,
and exposure apparatuses 100 and 101 may be made to operate
according to instructions from analytical apparatus 170 via the
management controller or without it.
[Device Manufacturing Process]
[0221] Next, a flow of a series of processes in device
manufacturing system 1000 will be described. The series of
processes of device manufacturing system 1000 are scheduled and
controlled by host 600. The table in FIG. 28 shows processing items
that can be executed in the series of processes. In the columns of
a main item in the table, rough processing procedures that could be
executed in order are described in the processing order. As is
shown in the table, in the series of processes, first of all, a
film formation/resist coating processing and a wafer measurement
and/or inspection processing (A), a wafer measurement and/or
inspection processing (B), an exposure processing and a wafer
measurement and/or inspection processing (C), a PEB processing and
a wafer measurement and/or inspection processing (D), a development
processing and a wafer measurement and/or inspection processing
(E), an etching processing and a wafer measurement and/or
inspection processing (F), and an impurity diffusion processing and
a wiring processing are repeatedly performed, and after the device
pattern of each layer is all formed, a probing processing, a repair
processing, a dicing processing, a packaging processing and a
bonding processing are performed and finally a device is completed.
Incidentally, the abnormality detected in the measurement and/or
inspection processing is used for adjustment or the like of
processing contents of the various processings described above,
that is, the film formation/resist coating processing, the exposure
processing, the PEB processing, the development processing, the
etching processing, the impurity diffusion processing and the
wiring processing, the probing processing, the repair processing
and the like.
[0222] In the embodiment, the processings corresponding to the main
items shown in FIG. 28 are to be repeated with respect to each
wafer, for example, in a pipeline manner.
[0223] In the columns of subitems, specific processing contents
that are actually performed during the corresponding processings in
the main items are described. In the columns of the subitem
(essential), the processings that are performed without fail in the
series of processes are indicated. Further, in the columns of the
subitem (liquid immersion), the processings, which are performed
without fail in the process in which exposure in liquid immersion
exposure apparatus 101 is performed, are described. For example, in
the film formation/resist coating processing, antireflection film
formation (film formation) and resist coating are the essential
processings, but topcoat film coating is essential only in the case
of performing liquid immersion exposure. In the case of performing
liquid immersion exposure, the processings in the subitems (liquid
immersion) also become the essential processings.
[0224] Further, in the columns of the subitem (selection), the
processings whose execution or non-execution is selected by host
600 are described. The processings designated as the subitems
(selection) are the measurement and/or inspection processings that
are performed in each stage of the series of processes.
[0225] First, in film formation/resist coating processing and wafer
measurement and/or inspection processing (A), film thickness
measurement of an antireflection film, a resist film and a topcoat
film, appearance inspection of films (inspection of physical
abnormality such as scratch and chemical abnormality such as entry
of foreign substances such as infiltrating of liquid), and the like
are selectively performed. Besides, in wafer measurement and/or
inspection processing (B), alignment pre-measurement
(pre-measurement of wafer mark M), focus pre-measurement
(measurement of surface shape of wafer W), and appearance
inspection of wafer W (mainly, inspection of foreign substances on
wafer W) are selectively performed.
[0226] Further, in wafer measurement and/or inspection processing
(C), appearance inspection (mainly, inspection of foreign
substances on wafer W) is performed, and in wafer measurement
and/or inspection processing (D), appearance inspection (mainly,
pattern inspection such as inspection of stains on wafer W) is
performed. In wafer measurement and/or inspection processings (E)
and (F), pattern defect inspection, pattern line width (size)
measurement, overlay error measurement and the like are selectively
performed.
[0227] Host 600 creates a series of processing procedures by
selecting in advance the processings of performing measurement
and/or inspection required for the analysis performed in analytical
apparatus 170 from among the subitems (selection), and combining
the subitems (essential) (or the subitems (essential) and the
subitems (liquid immersion)) and the selected subitems (selection)
in the order in the table shown in FIG. 28, and executes the
created processing procedures. In the following description, the
combination of the processing procedures in the series of processes
created in host 600 and analytical contents that can be performed
in analytical apparatus 170 will be described.
(1) Optimization of Processing Conditions Related to Wafer
Alignment
[0228] First, the case will be described where optimization of
processing conditions related to wafer alignment is performed. In
the case of performing the optimization, host 600 creates
processing procedures by selecting the subitem (selection): film
thickness measurement processing of each film in the main item:
wafer measurement and/or inspection processing (A) and the subitem
(selection): alignment pre-measurement in the main item: wafer
measurement and/or inspection processing (B). Herein, the alignment
pre-measurement is a processing where pre-measurement of the wafer
marks (MX.sub.p, MY.sub.p) in measurement and/or inspection
instrument 120 is performed before carrying wafer W into exposure
apparatus 100 or 101.
[0229] FIG. 29A shows a sectional view of part of wafer W. As is
shown in FIG. 29A, uneven marks are formed on the base of wafer W,
and a resist film is coated on the uneven marks by C/D 110 in the
film formation/resist coating processing (refer to FIG. 28).
Incidentally, in actual, an antireflection film is formed under the
resist film, and in the case liquid immersion exposure is
performed, a topcoat film is further formed on the resist film.
However, theses films are omitted in FIG. 29A for simplification of
the description. Alignment system ALG photoelectrically detects
intensity images of the uneven marks on the base shown in FIG. 29A
with epi-illumination and acquires waveform data corresponding to
the photoelectrically detected intensity images.
[0230] FIG. 29B shows an example of the one-dimensional waveform
data. As is shown in FIG. 29B, the one-dimensional waveform data
shows the waveform having three peaks in accordance with the
unevenness of the marks.
[0231] Further, FIG. 29C shows an example of film thickness data of
a resist film on wafer W corresponding to the one-dimensional
waveform data. Incidentally; in actual, the film thickness data of
a resist film is two-dimensional (XY coordinate system) data, but
herein, the film thickness data is converted into one-dimensional
data in the measurement axis direction so as to accord with the
mark waveform data. Various methods can be employed as the method
of conversion, and the one-dimensional data can be obtained by
totaling and/or averaging data in a direction orthogonal to the
measurement axis direction. It is known that since alignment system
ALG episcopically illuminates the wafer mark from above the resist
film and photoelectrically detects an intensity image by a
reflected light and/or a diffracted light from the wafer mark in
the wafer alignment, the intensity image is easily affected by the
resist film or the like. Then, in optimization of this case, the
processing conditions related to wafer alignment are efficiently
optimized, by analyzing the correlativity between the mark waveform
data shown in FIG. 29B and the film thickness data shown in FIG.
29C, determining whether the cause of abnormality in the mark
waveform data is the resist film or the like, or the base (mark
itself) in accordance with the degree of correlation, and narrowing
down the processing conditions that are effective for solving the
cause.
[0232] For example, in the examples shown in FIG. 29A and FIG. 29C,
the film thickness on the right side of the waveform is slightly
thinner, and also in the waveform data shown in FIG. 29B, the
rightmost peak is smaller, and the correlativity between the mark
waveform data and the film thickness data is considered to be high.
Since it is difficult to accurately detect position information of
the mark using such waveform data, any measures needs to be taken.
As the measures to be taken in such a case, for example, the method
in which the ununiformity of a resist film shown in FIG. 29A is
solved can be considered. This is because it can be considered that
asymmetry property of the mark waveform is solved by solving the
ununiformity, and it becomes possible to accurately detect the mark
position. Further, the measures can also be considered in which
actual-measurement-required parameters used to acquire the mark
waveform data in alignment system ALG are re-set to a state that is
not affected by the ununiformity of film thickness.
[0233] As such actual-measurement-required parameters, for
examples, there are the wavelength of illumination light of
epi-illumination, and the like. By setting the wavelength of
illumination light in the range that is insensitive to a resist
film or the like, the intensity image of the mark can be detected
regardless of the ununiformity of film thickness.
[0234] On the other hand, in the case there is no correlation
between the asymmetry property of the mark waveform data and the
film thickness data, which is different from the examples shown in
FIG. 29B and FIG. 29C, the mark itself as the base is considered to
have asymmetry property. Then, in such a case, the mark only has to
be excluded from the measurement subject.
[0235] In the case of trying to perform optimization in this case,
host 600 selects film thickness measurement of an antireflection
film, film thickness measurement of a resist film and film
thickness measurement of a topcoat film by measurement and/or
inspection instrument 120 from among the subitems (selection) in
the main item: film formation/resist coating processing and wafer
measurement and/or inspection processing (A), and alignment
pre-measurement by measurement and/or inspection instrument 120
from among the subitems (selection) in the main item: wafer
measurement and/or inspection processing (B), and creates
processing procedures of a series of processes so that the selected
processings are executed. In this case, in actual, as is shown in a
frame in FIG. 30, a film formation processing of an antireflection
film in film forming apparatus 910, a film thickness measurement
processing of the antireflection film in measurement and/or
inspection instrument 120, a resist film coating processing in C/D
110, a film thickness measurement processing of the resist film in
measurement and/or inspection instrument 120, (in the ease of
liquid immersion exposure, in addition to these processings, a film
formation processing of a topcoat film in film forming apparatus
910, a film thickness measurement processing of the topcoat film in
measurement and/or inspection instrument 120), an alignment
pre-measurement processing in measurement and/or inspection
instrument 120, and an exposure processing are to be executed in
this order. By executing this process, each film thickness data of
an antireflection film, a resist film and a topcoat film and
waveform data of wafer marks are measured. Incidentally, in the
case abnormality is detected in the inspection processing of each
film, the film is to be removed once, and a film is to be newly
formed or coated. Further, an antireflection film and a topcoat
film are formed by the coating in C/D 110 in some cases.
[0236] Host 600 issues a processing start order to analytical
apparatus 170 according to the processing in FIG. 27, before
exposure is started (step 401). The processing start order is an
order that optimization of processing conditions related to wafer
alignment in (1) should be performed. Analytical apparatus 170
performs steps 403 to 409, and acquires various film thickness
data, data of alignment pre-measurement and the like from
measurement and/or inspection instrument 120.
[0237] FIG. 30 shows a flowchart of an analytical processing in
step 411 in FIG. 27 for the optimization processing. The analytical
processing is performed with respect to each wafer mark for which
waveform data has been acquired. As is shown in FIG. 30, first, in
step 551, whether or not there is abnormality in mark waveform data
is judged. When the judgment is denied, the processing is finished,
and when the judgment is affirmed, the procedure proceeds to step
553.
[0238] In step 553, the degree of correlation between the mark
waveform data having abnormality and the film thickness data is
computed, and in step 555, whether or not the degree of correlation
exceeds a threshold is judged. When the judgment is denied, the
procedure proceeds to step 557, and when the judgment is affirmed,
the procedure proceeds to step 561.
[0239] When the judgment is denied, it can be considered that there
is no correlation between the mark waveform data and the film
thickness data and the mark waveform data has abnormality due to
the base of wafer W. Then, in step 557, the alignment-related
parameters are optimized so that the wafer mark is rejected from
measurement subject.
[0240] On the other hand, when the judgment in step 555 is
affirmed, it can be considered that there is the correlation
between the mark waveform data and the film thickness date and the
mark waveform data has abnormality due to the ununiformity of film
thickness of various films. In this case, the procedure proceeds to
step 561, in which whether or not to optimize the
alignment-related-parameters is judged. When the judgment is
affirmed, that is, in the case the instruction from host 600 is set
so as to adjust the alignment-related-parameters, the procedure
proceeds t step 563, in which actual-measurement-required
parameters among the alignment-related-parameters are optimized. As
the actual-measurement-required parameters to be optimized, an
alignment sensor to be selected (FIA or LSA), the wavelength of
illumination light that is not affected by a resist film or the
like, a detection algorithm in which a mark position can be
accurately detected even if the mark waveform has a high degree of
asymmetry, and the like can be cited. Meanwhile, when the judgment
in step 561 is denied, the procedure proceeds to step 565, in which
data related to a processing state of film formation/coating (i.e.
processing parameters, and monitoring data of a processing state)
is acquired from film forming apparatus 910 or C/D 110. In step
567, based on the acquired processing state, optimization of film
formation/coating conditions is performed. In other words, in this
case, the processing conditions in C/D 110 and/or film forming
apparatus 910 (such as a film formation condition of an
antireflection film, a coating condition of a resist film, and a
film formation condition of a topcoat film) are optimized so that
the ununiformity of film thickness that has caused the asymmetry of
the mark is solved.
[0241] After this processing, as is shown in FIG. 27, in the
accumulation processing in step 413, data such as the mark waveform
data and the film thickness data, and the optimized
alignment-related parameters and history related to film
formation/coating conditions, and the like are accumulated in the
database of analytical apparatus 170. Then, in step 415,
information on the parameters that have been optimized in steps
557, 563 and 567 is sent to the relevant apparatus, that is,
exposure apparatus 100 or 101, or C/D 110 and film forming
apparatus 910. Each apparatus changes the relevant parameters to
the optimum values and performs the subsequent processings. Thus,
feedback control of the film formation/coating conditions in film
forming apparatus 910 and C/D 110 is realized, and feedforward
control of the alignment-related parameters in exposure apparatus
100 or 101 is realized.
[0242] Analytical apparatus 170 returns a processing end notice to
host 600 (step 417).
[0243] Incidentally, in the embodiment, either one of the
optimization of the alignment-related parameters or the
optimization of the film formation/coating conditions is performed,
but both the optimizations may be performed.
[0244] Further, the subject for computation of the correlation with
the mark waveform data is not limited to film thickness data of an
individual film, that is, an antireflection film, a resist film,
and a topcoat film, but film thickness data that is obtained by
totaling all the films' thickness, or film thickness data of
thickness of two films in total out of the three films may be
employed. Thus, it becomes possible to analyze in more detail which
film out of the three films affects the mark waveform data.
[0245] Incidentally, in the embodiment, the case has been described
where the mark waveform data is one-dimensional data and the film
thickness data is converted from two-dimensional data into
one-dimensional data, but the mark waveform data may be
two-dimensional data of the XY coordinate system. In this case, in
step 553, the correlation between both two-dimensional data is to
be computed.
(2) Optimization of Focus-Control-Related Parameters
[0246] Next, the case will be described where optimization of
focus-control-related parameters on exposure is performed. In this
case, host 600 selects the subitem (selection): film thickness
measurement of each film in the main item: wafer measurement and/or
inspection processing (A) and the subitem (selection): focus
pre-measurement in the main item: wafer measurement and/or
inspection processing (B), and creates processing procedures. The
focus pre-measurement is the processing of performing
pre-measurement of a surface shape of wafer W in measurement and/or
inspection instrument 120 before carrying wafer W into exposure
apparatus 100 or 101.
[0247] FIG. 31A shows a sectional view of part of wafer W. An
antireflection film and a topcoat film are not shown and only a
resist film is shown also in FIG. 31A, similar to FIG. 29A. It is
not the surface of a resist film but a base of wafer W that is
measured by the multipoint AF sensor (60a, 60b) during exposure,
and it is the surface shape of the base of wafer W that is measured
in the focus pre-measurement. FIG. 31B shows an example of
measurement data of the surface shape of wafer W measured by the
focus pre-measurement.
[0248] As is show in FIG. 31B, the data is two-dimensional data in
the XY coordinate system, which shows that the surface shape of
wafer W is not flat when exactly viewing it. In order to transfer a
device pattern with high accuracy to such a surface, the parameters
related to focus control need to be optimized to some extent. As
the parameters that can be optimized, for example, there are
selection of a focus sensor (measurement point) in the multipoint
AF sensor (60a, 60b), and the like. The focus sensor is preferably
selected so that the Z-position of the base between measurement
points becomes as flat as possible.
[0249] FIG. 31C shows an example of measurement data of film
thickness corresponding to the measurement data of surface shape in
FIG. 31B. The measurement data of film thickness of a resist film
or the like shown in FIG. 31C is also two-dimensional data in the
XY coordinate system. The measurement values of the multipoint AF
sensor (60a, 60b) are affected by the ununiformity of film
thickness of a resist film or the like in some cases. This is
because an offset component of the multipoint AF sensor changes
depending on the measurement point due to the ununiformity of film
thickness, and a surface shape that is different from the actual
surface shape of wafer W is observed in some cases. Accordingly, in
the embodiment, concerning the place that is regarded as being
abnormal because the gradient of surface shape is steep in the
measurement data of surface shape of wafer W, the degree of
correlation between the measurement data of surface shape shown in
FIG. 31B and the film thickness data shown in FIG. 31C is analyzed,
and in accordance with the degree of correlation, whether the cause
of considerable change of the surface shape is due to the
ununiformity of a resist film or the like, or the base of wafer W
(i.e. the original surface shape) is determined, and optimization
of processing conditions are optimized in accordance with the
determined cause.
[0250] In this case, in host 600, film thickness measurement of an
antireflection film, film thickness measurement of a resist film
and film thickness measurement of a topcoat film (only when
performing liquid immersion exposure) by measurement and/or
inspection instrument 120 are selected from among the subitems
(selection) of the main item: film formation/resist coating
processing and wafer measurement and/or inspection processing (A)
(refer to FIG. 28), and focus pre-measurement by measurement and/or
inspection instrument 120 is selected from among the subitems
(selection) of the main item: wafer measurement and/or inspection
processing (B) (refer to FIG. 28). In this case, in actual, as is
shown in a frame in FIG. 32, a film formation processing of an
antireflection film in film forming apparatus 910, a film thickness
measurement processing of the antireflection film in measurement
and/or inspection instrument 120, a resist film coating processing
in C/D 110, a film thickness measurement processing of the resist
film in measurement and/or inspection instrument 120, a film
formation processing of a topcoat film in film forming apparatus
910, a film thickness measurement processing of the topcoat film in
measurement and/or inspection instrument 120, a focus
pre-measurement processing in measurement and/or inspection
instrument 120 and an exposure processing are to be executed in
this order. By executing this process, each film thickness of an
antireflection film, a resist film and a topcoat film and the
surface shape of the wafer are measured by measurement and/or
inspection instrument 120 before performing the exposure
processing.
[0251] As is shown in FIG. 27, in step 401, host 600 issues a
processing start order to analytical apparatus 170. Analytical
apparatus 170 acquires measurement data of various film thickness
and measurement data of the surface shape by the processings in
steps 403 to 409, and the execution of the analytical processing in
step 411 is started in analytical apparatus 170.
[0252] FIG. 32 shows a specific flowchart of optimization
processing in analytical apparatus 170. As is shown in FIG. 32,
first, in step 601, whether or not there is a portion whose surface
shape is abnormal (e.g. a portion whose gradient or level
difference exceeds a predetermined level) is judged. When the
judgment is denied, the processing is finished, and when the
judgment is affirmed, the procedure proceeds to step 603. In step
603, the degree of correlation between measurement data of the
abnormal portion and measurement data of film thickness of the
portion is computed. Herein, the degree of correlation is computed
using the measurement data of film thickness of various films and
the measurement data of surface shape of wafer W. In step 605,
whether or not the computed degree of correlation exceeds a
threshold is judged. When the judgment is denied, the base of wafer
W itself is judged to have been measured and the procedure proceeds
to step 613, and when the judgment is affirmed, the procedure
proceeds to step 607.
[0253] In step 607, whether or not to optimize film
formation/coating conditions is judged according to instruction
contents from host 600. The procedure proceeds to step 609 only in
the case the judgment is affirmed, and data related to processing
state of the film formation/coating processing is acquired from
film forming apparatus 910 or C/D 110, and in step 611, the film
formation/coating conditions of film forming apparatus 910 or C/D
110 are optimized. The detailed description of processing contents
in this case will be omitted because they are the same as those in
step 567 in FIG. 30.
[0254] In the next step, step 613, whether or not to optimize the
focus-related parameters is judged according to instruction
contents from host 600. The procedure proceeds to step 615 only in
the case the judgment is affirmed, and the focus-related parameters
are optimized by selecting a focus sensor on the surface as flat as
possible, or the like.
[0255] Incidentally, when performing the optimization, the
processing is slightly different between the case when the judgment
is made that there is no correlation between the film thickness
data and the surface shape data and the case when the judgment is
made that there is the correlation. In the case the judgment is
made that there is no correlation, selection of a focus sensor or
the like is performed based on only the measurement data of surface
shape. Further, in the case the judgment is made that there is the
correlation, selection of a focus sensor or the like is performed
taking the measurement data of film thickness into consideration in
addition to the measurement data of surface shape, that is, based
on the total (summation) of the measurement data of surface shape
and the measurement data of film thickness.
[0256] After this processing, as is shown in FIG. 27, in the
accumulation processing in step 413, the measurement data of
surface shape, the measurement data of film thickness, and history
related to the optimized focus-related parameters and film
formation/coating conditions are accumulated in the database of
analytical apparatus 170. Then, in step 415, data related to
parameters that have been optimized in steps 611 and 615 in FIG. 32
is sent to the relevant apparatus, that is, exposure apparatus 100
or 101, or C/D 110 and film forming apparatus 910. Each apparatus
changes the relevant parameters to optimum values and performs the
subsequent processing. Thus, feedback control of film
formation/coating conditions in film forming apparatus 910 and C/D
110 is realized, and feedforward control of the focus-related
parameters in exposure apparatus 100 or 101 is realized. Analytical
apparatus 170 returns a processing end notice to host 600 (step 417
in FIG. 27).
[0257] Incidentally, in the flowchart in FIG. 32, optimization of
the focus-related parameters on exposure is performed only in the
case abnormality of surface shape is detected, but the present
invention is not limited to this. That is, step 601 does not always
have to performed, and the processings in step 603 and the
succeeding steps can be performed to the wafer entire surface.
[0258] Further, the case can also be considered where the surface
shape is measured as flat due to the ununiformity of film thickness
even if the surface shape of the base has level difference or
gradient in actual. In this case, even if the correlation between
film thickness and surface shape is not recognized, selection of a
focus sensor is preferably performed based on the total of the
measurement data of film thickness and the measurement data of
surface shape.
(3) Optimization of Processing Conditions of Wafer Appearance
Inspection Before Exposure
[0259] Next, the case will be described where optimization of
processing conditions of wafer appearance inspection before
exposure, that is, wafer appearance inspection in wafer measurement
and/or inspection processing (B) is performed. In this case, host
600 selects the subitem (selection): appearance inspection (foreign
substance inspection) in the main item: wafer measurement and/or
inspection processing (B) and the subitem (selection): appearance
inspection (foreign substance inspection) in the main item: wafer
measurement and/or inspection processing (C), and creates
processing procedures. FIG. 33A shows an example of data of
inspection results of appearance inspection of wafer W in wafer
measurement and/or inspection processing (B) (foreign substance
inspection data (B)). Incidentally, the data is actually XY
two-dimensional data, but is shown as one-dimensional data for the
sake of simplification of the description. In the foreign substance
inspection, a foreign substance is judged to exist at the portion
at which a level of data exceeds an abnormality detection level
(shown in a dotted line). In the data shown in FIG. 33A, since the
portion that exceeds the abnormality detection level does not
exist, the judgment is made that there is no foreign substance.
[0260] FIG. 33B shows an example of data of inspection results of
appearance inspection of wafer Win wafer measurement and/or
inspection processing (C) (foreign substance inspection data (C)).
Also in this foreign substance inspection, a foreign substance is
judged to exist at the portion at which a level of data exceeds an
abnormality detection level shown in a dotted line. In the data
shown in FIG. 33B, since the portion that exceeds the threshold
exists, the judgment is made that there is a foreign substance at
the portion.
[0261] When comparing the data in FIG. 33A with the data in FIG.
33B, however, the portion that is judged to have abnormality in
FIG. 33B has a peak also in the data in FIG. 33A, and the
correlativity between them is estimated to be high. In such a case,
it can be considered that a foreign substance already adhered on
wafer W before exposure, and the foreign substance could have been
detected when performing wafer measurement and/or inspection
processing (B), if the sensitivity of abnormality inspection in
wafer measurement and/or inspection processing (B) had been
increased (i.e. the abnormality detection level had been lowered).
Accordingly, in such a case, by adjusting the abnormality detection
level of appearance inspection in wafer measurement and/or
inspection processing (B), the foreign substance adhering on wafer
W can be detected earlier.
[0262] In this case, in actual, as shown in a frame in FIG. 34, an
appearance inspection in wafer measurement and/or inspection
processing (B) (which is shortly referred to as an appearance
inspection (B) in FIG. 34), an exposure processing, an appearance
inspection in wafer measurement and/or inspection processing (C)
(which is shortly referred to as an appearance inspection (C) in
FIG. 34), a PEB processing, a development processing and an etching
processing are to be executed in this order. By executing this
process, inspection data of appearance inspection (B) on wafer W
before performing the exposure processing and inspection data of
appearance inspection (C) on wafer W after the exposure processing
can be obtained. Host 600 issues a processing start order to
analytical apparatus 170 according to the processing in FIG. 27
before exposure is stared (step 401). The processing start order is
the order that (3) optimization of wafer appearance inspection
before exposure should be performed. Analytical apparatus 170
acquires inspection data of appearance inspections (B) and (C) by
performing steps 403 to 409.
[0263] FIG. 34 shows a flowchart of some of processing procedures
created by host 600. As is shown in FIG. 34, in step 651, the
judgment is made of whether or not a result of appearance
inspection (B) is normal and abnormality is detected in appearance
inspection (C). When the judgment is denied, the processing is
finished, and when the judgment is affirmed, the procedure proceeds
to step 653. In step 653, the degree of correlation of inspection
data between inspection (B) and inspection (C) is computed. In the
next step, step 655, whether or not the computed degree of
correlation exceeds a threshold is judged. The procedure proceeds
to step 657 only in the case the judgment is affirmed, and the
abnormality detection level of appearance inspection (B) is
adjusted.
[0264] After this processing, as is shown in FIG. 27, in the
accumulation processing in step 413, the inspection data of
inspection (B) and inspection (C), and history related to
adjustment of the abnormality detection level are accumulated in
the database of analytical apparatus 170. Then, in step 657, the
adjusted abnormality detection level is sent to the relevant
apparatus, that is, measurement and/or inspection instrument 120.
Measurement and/or inspection instrument 120 changes the relevant
parameters to optimum values and performs the subsequent
processing. Thus, feedback control of abnormality detection level
of measurement and/or inspection instrument 120 is realized.
Analytical apparatus 170 returns a processing end notice to host
600 (step 417 in FIG. 27).
(4) Optimization of Liquid-Immersion-Exposure-Related Processing
Conditions (No. 1)
[0265] Next, the case will be described where optimization of
liquid-immersion-exposure-related processing conditions (No. 1) is
performed. Herein, optimization of processing conditions in liquid
immersion exposure is performed based on the appearance inspection
result of each film on wafer W before exposure and the appearance
inspection result of wafer W after exposure. In this case, host 600
selects the subitem (selection): film inspection of each film
(appearance inspection (A)) in the main item: wafer measurement
and/or inspection processing (A) and the subitem (selection):
appearance inspection (appearance inspection (C)) in the main item:
wafer measurement and/or inspection processing (C), and creates
processing procedures. In a frame (call-out) in FIG. 35, a flow of
processing procedures created by host 600 in order to perform this
optimization processing is shown. That is, herein, an
antireflection film formation, an inspection of the antireflection
film, a resist film coating, an inspection of the resist film, a
topcoat film formation, an inspection of the topcoat film, a liquid
immersion exposure and appearance inspection (C) are performed in
this order. By executing this process, inspection data of
appearance inspection (A) of each film on wafer W is obtained
before performing the exposure processing, and inspection data of
appearance inspection (C) on wafer W is obtained after the exposure
processing.
[0266] Host 600 issues a processing start order to analytical
apparatus 170 according to the processing in FIG. 27 before
exposure is started (step 401). Analytical apparatus 170 acquires
inspection data of appearance inspection (A) and appearance
inspection (C) and the like from measurement and/or inspection
instrument 120 by performing steps 403 to 409, and then executes an
analytical processing (step 411).
[0267] FIG. 35 shows a specific flowchart of the analytical
processing in this case. As is shown in FIG. 35, in step 701, the
judgment is made of whether or not a result of appearance
inspection (A) is normal and a result of appearance inspection (C)
is abnormal. When the judgment is denied, the processing is
finished, and when the judgment is affirmed, the procedure proceeds
to step 703. In step 703, data of liquid immersion monitoring
result by liquid immersion monitor 260 is acquired from exposure
apparatus 101. In step 705, based on the acquired data of liquid
immersion monitoring result, the cause of abnormality in inspection
(C) is analyzed. As the cause of such abnormality, for example, as
is shown in FIGS. 7A to 7C, elution of a resist film into liquid
during exposure, a particle or foreign substance adhering to the
remaining liquid, a watermark or the like can be considered.
[0268] In step 707, whether or not host 600 has designated
optimization of liquid-immersion-related parameters is judged, and
only in the case the judgment is affirmed, the procedure proceeds
to step 709, in which optimization of the liquid-immersion-related
parameters is performed so that the abnormality is solved. As the
liquid-immersion-related parameters, for example, there are the
flow speed or the temperature of liquid LQ, a filter condition of
liquid LQ, a period of time when the place where abnormality occurs
is immersed in liquid (liquid immersion time), and the like.
[0269] In order to adjust the liquid immersion time of a certain
place on wafer W, an exposure route on wafer W needs to be changed.
FIG. 36 shows an exposure route that shows the order in which shot
areas on wafer W are exposed. In step 709, the exposure route is
changed so that the liquid immersion time of the point where
abnormality is detected is shortened. Further, as is shown in FIG.
37, in some cases, another place of wafer W is immersed in liquid
also during wafer mark measurement by alignment system ALG, and
therefore, in the case the point where abnormality is detected
seems to be immersed in liquid for a long period of time during the
alignment, the wafer marks to be measured may be changed.
[0270] In step 711, the judgment is made of whether or not
optimization of liquid removal processing conditions is set to be
performed referring to instructions from host 600, and only in the
case the judgment is affirmed, the procedure proceeds to step 713,
in which optimization of liquid removal processing conditions is
performed. Herein, processing conditions of a liquid removal
processing, for example, the processing time is lengthened, or a
period of time from when exposure ends until when liquid removal is
performed is shortened, so that the degree of removal of the
remaining liquid on wafer W is improved (i.e. wafer W is completely
dried). Incidentally, in the following description, the processing
conditions of the liquid removal processing are also included in
the liquid-immersion-related parameters.
[0271] After this processing, as is shown in FIG. 27, in the
accumulation processing in step 413, data such as data of
inspection (A) and data of inspection (C), history of the optimized
liquid-immersion-related parameters and the like are accumulated in
the database of analytical apparatus 170. Then, information on the
parameters that have been optimized in steps 709 and 713 is sent to
the relevant apparatus, that is, exposure apparatus 101. Exposure
apparatus 101 changes the relevant parameters to optimum values,
and performs the subsequent processing. Thus, feedback control of
the liquid-immersion-related parameters and liquid removable
conditions of removal unit T is realized. Incidentally,
accumulation of measurement and/or inspection results and
optimization results, and transmission to various apparatuses are
to be performed in all the optimization processings at the time of
liquid immersion exposure which will be described below, and
therefore, their detailed description will be omitted.
[0272] Analytical apparatus 170 returns a processing end notice to
host 600 (step 417).
[0273] Incidentally, in the embodiment, removal unit T is to be
arranged within exposure apparatus 101, but the removal unit may be
arranged within track 200B. In this case, feedback of optimization
results of processing conditions of liquid removal is performed to
track 200B, not to exposure apparatus 101.
(5) Optimization of Liquid-Immersion-Exposure-Related Processing
Conditions (No. 2)
[0274] Next, the case will be described where optimization of
liquid-immersion-exposure-related processing conditions (No. 2) is
performed. Herein, as is shown in a frame in FIG. 38, optimization
of processing conditions in liquid immersion exposure is performed
based on an appearance inspection in wafer measurement and/or
inspection processing (C) before a PEB processing (appearance
inspection (C)) and an appearance inspection in wafer measurement
and/or inspection processing (D) after the PEB processing
(appearance inspection (D)). Host 600 selects the subitem
(selection): wafer appearance inspection (foreign substance
inspection) in the main item: wafer measurement and/or inspection
processing (C) and the subitem (selection): wafer appearance
inspection (inspection of stains due to the remaining liquid, or
the like) in the main item: wafer measurement and/or inspection
processing (D), and creates processing procedures.
[0275] As is shown in FIG. 38, first, in step 751, the judgment is
made of whether or not a result of inspection (C) is normal and a
result of inspection (D) is abnormal. When the judgment is denied,
the processing is finished, and when the judgment is affirmed, the
procedure proceeds to step 753. In step 753, processing state data
of PEB (e.g. data of the temperature or the processing time) is
acquired from C/D 110 of track 200B. In step 755, based on the
acquired data of processing state of PEB, the PEB processing is
checked.
[0276] In step 757, whether or not there is any problem in the
processing state of the PEB processing is judged. Only in the case
the judgment is affirmed, the procedure proceeds to step 759, in
which the processing conditions of the PEB processing are
optimized. As such processing conditions, for example, the setting
temperature of PEB can be cited. In the case the judgment in step
757 is denied, the procedure proceeds to step 761, in which
inspection conditions of appearance inspection (C) are optimized.
Since this processing is the same as step 657 in FIG. 34, the
detailed description will be omitted. In the next step, step 763,
data of liquid immersion monitoring results is acquired from
exposure apparatus 101, and in step 765, the
liquid-immersion-related parameters (which include processing
conditions of the liquid removable processing, as is described
above) are optimized. Since this optimization processing is the
same as steps 709 and 713 in FIG. 35, the detailed description will
be omitted.
[0277] Incidentally, herein, instead of optimization of
liquid-immersion-related parameters in steps 763 and 765, the film
formation/coating conditions in film forming apparatus 910 or C/D
110 may be optimized. That is, optimization of top coat processing
such as thickening a topcoat film, or change of types of resist,
and/or change of coating conditions of resist, or the like may be
performed, so that liquid does not infiltrate into a resist
film.
(6) Optimization of Processing Conditions of Liquid Immersion
Exposure (No. 3)
[0278] Next, the case will be described where optimization of
processing conditions of liquid immersion exposure (No. 3) is
performed. Herein, as is shown in FIG. 39, optimization of the
processing conditions is performed based on results of appearance
inspection (C) of wafer W before a PEB processing and pattern
defect inspection (E) of wafer W after a development processing.
That is, optimization of processing conditions is performed in
accordance with the difference in detection results between before
and after the PEB processing and the development processing. In
this case, host 600 selects the subitem (selection): wafer
appearance inspection (foreign substance and/or remaining liquid
inspection) (appearance inspection (C)) in the main item: wafer
measurement and/or inspection processing (C) and the subitem
(selection): pattern defect inspection in the main item: wafer
measurement and/or inspection processing (E) (defect inspection
(E)), and creates processing procedure.
[0279] As is shown in FIG. 39, first, in step 851, the judgment is
made of whether or not a result of inspection (C) is normal and a
result of inspection (E) is abnormal. When the judgment is denied,
the processing is finished. In step 853, data of processing state
of a development processing of C/D 110 of track 200B is acquired.
In step 855, based on the acquired data of processing state of the
development processing of C/D 110, the development processing is
checked. In step 857, whether or not there is any problem in the
development processing of C/D 110 is judged. When the judgment is
affirmed, the procedure proceeds to step 859, in which the
processing conditions of the development processing are optimized.
After step 859 ends, the processing is finished. On the other hand,
when the judgment in step 857 is denied, the procedure proceeds to
step 861, in which data of processing state of the PEB processing
is acquired from C/D 110 of track 200B.
[0280] In the next step 863, whether or not there is any problem in
the processing state of the PEB processing of CID 110 is judged.
When the judgment is affirmed, the procedure proceeds to step 867,
the processing conditions of the PEB processing are optimized so
that the occurrence frequency of pattern defect is reduced. When
the judgment is denied, the procedure proceeds to step 869, in
which data of liquid immersion monitoring results is acquired from
exposure apparatus 101. In the next step, step 871, the
liquid-immersion-related parameters are optimized so that the
occurrence frequency of pattern defect is reduced.
[0281] That is, in this optimization processing, the processing
state is selected in the order of the development processing, the
PEB processing and the liquid immersion exposure processing, in
accordance with the difference in detection results between before
and after the PEB processing and the development processing, and
the processing conditions of the processing that is judged to have
a problem are optimized.
(7) Optimization of Processing Conditions of Liquid Immersion
Exposure (No. 4)
[0282] Next, the case will be described where optimization of
processing conditions of liquid immersion exposure (No. 4) is
performed. Herein, as is shown in FIG. 90, the processing
conditions are optimized based on the difference in appearance
inspection results before and after a development processing. In
this case, host 600 selects the subitem (selection): appearance
inspection in the main item: wafer measurement and/or inspection
processing (D) before the development processing (appearance
inspection (D)) and the subitem (selection): pattern defect
inspection in the main item: wafer measurement and/or inspection
processing (E) after the development processing (defect inspection
(E)), and creates processing procedures.
[0283] FIG. 40 shows a flowchart of an analytical processing of
analytical apparatus 170 in this case. As is shown in FIG. 40,
first, in step 901, the judgment is made of whether or not a result
of inspection (D) is normal and a result of inspection (E) is
abnormal. When the judgment is denied, the processing is finished.
In step 903, data of processing state of a development processing
of C/D 110 of track 200B is acquired. In the next step, step 905,
based on the acquired data of the development processing, the
development processing is checked. In the next step, step 907,
whether or not there is any problem in the development processing
is judged. When the judgment is denied, the procedure proceeds to
step 909, in which liquid immersion state data is acquired, and in
step 911, the liquid-immersion-related parameters are optimized so
that a pattern defect portion disappears. Meanwhile, when the
judgment is affirmed, the processing conditions of the development
processing are optimized so that the pattern defect portion
disappears.
(8) Optimization of Processing Conditions of Liquid Immersion
Exposure (No. 5)
[0284] Next, the case will be described where optimization of
processing conditions of liquid immersion exposure (No. 5) is
performed. Herein, as is shown in FIG. 41, the processing
conditions are optimized based on the difference between
measurement and/or inspection results before an exposure processing
and measurement and/or inspection results after a development
processing. In this case, host 600 selects the subitem (selection):
focus pre-measurement in the main item: wafer measurement and/or
inspection processing (B) and the subitem (selection): pattern line
width measurement in the main item: wafer measurement and/or
inspection processing (E), and creates processing procedures.
[0285] FIG. 41 shows a flowchart of the analytical processing. As
is shown in FIG. 41, first, in step 951, the judgment is made of
whether or not a result of inspection (B) is normal and a result of
inspection (E) is abnormal. When the judgment is denied, the
processing is finished. In step 953, data of processing state of a
development processing in C/D 110 of track 200B is acquired. In the
next step, step 955, based on the data of processing state of the
development processing, the development processing is checked.
[0286] In the next step, step 957, whether or not there is any
problem in the development processing is judged, and when the
judgment is affirmed, the procedure proceeds to step 959, and the
processing conditions of the development processing are optimized.
When the judgment is denied, the procedure proceeds to step 961, in
which data of processing state of a PEB processing is acquired from
C/D 110 of track 200B. In step 963, the processing state of the PEB
processing is checked. In step 965, whether or not there is any
problem in the PEB processing is judged. When the judgment is
affirmed, the procedure proceeds to step 967, in which the
processing conditions of PEB are optimized. When the judgment is
denied, the procedure proceeds to step 969, in which control trace
data of various control errors such as an exposure dose,
synchronous accuracy, focus, a lens and the like is acquired from
exposure apparatus 101.
[0287] In the next step, step 971, the degree of correlation
between data of inspection result of the portion where a line width
is abnormal in inspection (E) and the trace data is computed. In
step 973, whether or not the degree of correlation exceeds a
threshold is judged. When the judgment is affirmed, the procedure
proceeds to step 974, in which control parameters related to the
trace data that has the high degree of correlation are optimized.
For this optimization, the CD table group is used. Meanwhile, when
the judgment is denied, a liquid immersion state defect during
exposure is judged to occur due to bubbles, particles or the like,
and the procedure proceeds to step 975, in which data of liquid
immersion monitoring results is acquired from exposure apparatus
101. In step 977, the liquid-immersion-related parameters are
optimized.
(9) Optimization of Processing Conditions of Liquid, Immersion
Exposure (No. 6)
[0288] Next, the case will be described where optimization of
processing conditions of liquid immersion exposure (No. 6) is
performed. In this case, host 600 selects the subitem (selection):
focus pre-measurement in the main item: wafer measurement and/or
inspection processing (B) and the subitem (selection): pattern line
width measurement in the main item: wafer measurement and/or
inspection processing (F), and creates processing procedures.
[0289] FIG. 42 shows a flowchart of a processing of analytical
apparatus 170 that performs this optimization. As is shown in FIG.
42, first, in step 1001, the judgment is made of whether or not a
result of inspection (B) is normal and a result of inspection (F)
is abnormal. When the judgment is denied, the processing is
finished because the optimization does not have to be performed in
particular. Further, in the case the judgment is affirmed, the
procedure proceeds to step 1003, in which data of processing state
of etching apparatus 930 is acquired. In step 1005, the processing
state of etching apparatus 930 is checked. In step 1007, whether or
not there is any problem in the etching apparatus is judged. When
the judgment is affirmed, the procedure proceeds to step 1009, in
which the etching conditions are optimized so that abnormality of
pattern line width is solved. When the judgment is denied, the
procedure proceeds to step 1011. Since the processings from steps
1011 to 1037 are the same as steps 953 to 977 in FIG. 41, the
detailed description will be omitted.
(10) Optimization of Processing Conditions of Liquid Immersion
Exposure (No. 7)
[0290] Next, the case will be described where optimization of
processing conditions of liquid immersion exposure (No. 7) is
performed. In this case, host 600 selects the subitem (selection):
pattern defect inspection in the main item: wafer measurement
and/or inspection processing (E) (defect inspection (E)) and the
subitem (selection): pattern defect inspection in the main item:
wafer measurement and/or inspection processing (F) (defect
inspection (F)), and creates processing procedures. As is shown in
FIG. 43, first, in step 1051, the judgment is made of whether a
result of inspection (E) is normal and a result of inspection (F)
is abnormal. When the judgment is denied, the processing is
finished.
[0291] In step 1053, data of processing state of an etching
processing is acquired. In step 1055, the processing state of
etching apparatus 930 is checked. In step 1057, whether or not
there is any problem in the processing state of etching is judged.
When the judgment is denied, deterioration in etching resistance
caused by liquid that infiltrates resist is judged to be a factor,
and the procedure proceeds to step 1061, in which liquid immersion
data is acquired from exposure apparatus 101, and then in step
1063, the liquid immersion-related-parameters are optimized. On the
other hand, the etching processing is judged to have a problem and
the judgment in step 1057 is affirmed, the procedure proceeds to
step 1059, in which the processing conditions of etching apparatus
940 are optimized.
[0292] Incidentally, the liquid-immersion-related parameters
include the processing conditions of the liquid removal processing,
as is described earlier.
(11) Optimization of Pattern-Line-Width-Related Processing
Conditions
[0293] Next, the case will be described where optimization of
pattern-line-width-related processing conditions is performed. In
this case, host 600 selects the subitem (selection): wafer film
inspection in the main item: wafer measurement and/or inspection
processing (A) and the subitem (selection): pattern line width
measurement in the main item: wafer measurement and/or inspection
processing (E) or wafer measurement and/or inspection processing
(F), and creates processing procedures.
[0294] FIG. 44 shows a flowchart of this analytical processing. As
is shown in FIG. 44, first, in step 1101, the judgment is made of
whether or not a result of inspection (A) is normal and a result of
inspection (E) or inspection (F) is abnormal. When the judgment is
denied, the processing is finished, and when the judgment is
affirmed, the procedure proceeds to step 1103. In step 1103, the
degree of correlation between data of inspection (A) and data of
inspection (E) or inspection (F) is computed. In step 1105, whether
or not the degree of correlation exceeds a threshold is judged.
When the judgment is denied, the processing is finished, and when
the judgment is affirmed, the procedure proceeds to step 1107.
[0295] In step 1107, the judgment is made of whether or not film
formation/coating conditions are set to be optimized. Only in the
case the judgment is affirmed, the film formation/coating
conditions are optimized in step 1109. In step 1111, whether or not
to optimize control parameters is judged. Only in the case the
judgment is affirmed, the control trace data of control errors of
an exposure dose, synchronous accuracy, focus, a lens and the like
is acquired in step 1113, and the control parameters are optimized
in step 1115.
(12) Optimization of Pattern-Overlay-Accuracy-Related Processing
Conditions (No. 1)
[0296] Next, the case will be described where optimization of
pattern-overlay-accuracy-related processing conditions (No. 1) is
performed. In this case, host 600 selects the subitem (selection):
alignment pre-measurement in the main item: wafer measurement
and/or inspection processing (B) and the subitem (selection):
overlay error measurement in the main item: wafer measurement
and/or inspection processing (E) or wafer measurement and/or
inspection processing (F), and creates processing procedures.
[0297] FIG. 45 shows a flowchart of this analytical processing. As
is shown in FIG. 45, first, in step 1151, the judgment is made of
whether or not a result of inspection (B) is normal and a result of
inspection (E) or inspection (F) is abnormal. When the judgment is
denied, the processing is finished, and when the judgment is
affirmed, the nonlinear correction parameters used to correct a
nonlinear component of shot array out of the alignment-related
parameters are optimized.
(13) Optimization of Pattern-Overlay-Accuracy-Related Processing
Conditions (No. 2)
[0298] Next, the case will be described where optimization of
pattern-overlay-accuracy-related processing conditions (No. 2) is
performed. In this case, host 600 selects the subitem (selection):
alignment pre-measurement in the main item: wafer measurement
and/or inspection processing (B) and the subitem (selection):
overlay error measurement in the main item: wafer measurement
and/or inspection processing (E) or wafer measurement and/or
inspection processing (F), and creates processing procedures.
[0299] FIG. 46 shows a flowchart of this analytical processing. As
is shown in FIG. 46, first, in step 1201, the judgment is made of
whether or not a result of inspection (B) is normal and a result of
inspection (E) or inspection (F) is abnormal. When the judgment is
denied, the processing is finished, and when the judgment is
affirmed, the degree of correlation between inspection (B) and
inspection (E) or inspection (F) is computed in step 1203. In step
1205, whether or not the degree of correlation exceeds a threshold
is judged. When the judgment is denied, the processing is finished,
and when the judgment is affirmed, the procedure proceeds to step
1207, in which the alignment-related parameters are optimized.
[0300] The optimization processings in (1) to (13) described above
can be combined as needed. It is effective to combine the
processing procedures related to the same system parameters, for
example, to combine the optimization related to alignment in (1)
and the optimization of overlay error in (13), or the like.
However, the optimization in (1) to (13) may be performed in a
predetermined order. The procedures can be freely designed in host
600 such as being designed to perform the optimization in (13)
after completing the optimization in (1). Since the ultimate
purpose of the process is to form a device pattern on wafer W with
good accuracy, the processing procedures with which the purpose can
be achieved earlier are preferable. For example, the optimization
processing that seems to be most effective can preferentially be
executed, or the processing of optimizing the processing condition
that greatly affects the yield in particular can preferentially be
executed.
[0301] Incidentally, in the optimization in (1) to (13), two types
of measurement and/or inspection results and the optimization
results are to be complied as a database in step 413 of FIG. 27.
The database can be used in the succeeding processes as the
knowledge that has been obtained beforehand. For example, when the
similar measurement and/or inspection results are obtained,
optimization of parameters can be more efficiently performed by
searching which optimization of parameter is effective or not
effective and optimizing the parameter according to the searching
results. In such a database, the effectiveness of optimization of
such a parameter may be analyzable for all wafers, or in the case
wafers are processed per lot, the effectiveness may be verifiable
with respect to each wafer in a lot.
[0302] Further, when referring to such a database, it is also
possible that the fluctuation in the processing state of a
processing apparatus is sensed beforehand by detecting the tendency
and regularity (e.g. periodicity) of two types of measurement
and/or inspection results, and the processing contents of the
processing apparatus are adjusted in advance so that occurrence of
abnormality is anticipated and prevented. Such regularity can be
expressed by, for example, a time function. For example, a
long-term fluctuation such as focus fluctuation of a projection
optical system of an exposure apparatus is expressed in a function
that uses the time, the environment (the temperature and humidity)
within the plant and the like as variables, referring to the
database (trace data in exposure apparatuses 100 and 101). In the
case the function has the regularity, a best focus position that is
a target value of focus control can be finely adjusted based on the
function, and as a consequence, occurrence of abnormality (such as
line width abnormality) in the measurement and/or inspection
results can be anticipated and prevented. Besides, the
alignment-related parameters can also be adjusted so that highly
accurate overlay can be realized, by taking into consideration the
regularity of measurement results of overlay error, the regularity
of mark waveform data and the like. Further, since abnormality that
occurs in the measurement and/or inspection at the latter stage can
be predicted to some extent from the regularity of the measurement
and/or inspection at the former stage, the measurement and/or
inspection at the latter stage can be strictly executed.
SUMMARY
[0303] As is described in detail above, according to the
embodiment, two types of measurement and/or inspection result data
of measurement and/or inspection processings (e.g. film thickness
data and mark waveform data, or appearance inspection data before
and after the liquid immersion exposure processing) that are
included in a series of processes are collected, the collected two
types of measurement and/or inspection result data are compositely
combined and analyzed, processing conditions under which processing
results to wafer W are favorable are specified by performing
optimization based on the analytical results, and the processing
conditions (e.g. liquid-immersion-related parameters, control
system parameters, and alignment-related parameters of exposure
apparatus 100, 101) are optimized, and therefore, more efficient
optimization of the processing conditions can be performed than the
case where the processing conditions are optimized using only one
type of measurement and/or inspection results data.
[0304] Further, in the embodiment, in analytical apparatus 170, the
processing whose processing conditions are optimized is decided
based on the correlation between two types of measurement and/or
inspection result data. In this manner, in the case there is the
correlation between two types of measurement and/or inspection
results, the processing that is effective for optimizing the
processing conditions can be specified from among a plurality of
processings. For example, in the case there is the correlation
between film thickness data and mark waveform data, the film
formation/resist coating processing can be specified as the
processing that is effective for optimizing the processing
conditions.
[0305] Further, in the embodiment, in analytical apparatus 170, the
processing conditions are optimized based on data related to at
least one of the correlation between two types of measurement
and/or inspection results and the total of two types of measurement
and/or inspection results. Since the processing state of wafer W
can be analyzed in detail using the correlation and/or the total of
two types of measurement and/or inspection results or the like,
more efficient optimization of the processing conditions can be
performed than the case where the processing conditions are
optimized based on a single measurement and/or inspection result.
For example, by analyzing the surface shape of wafer W based on the
correlation and/or the total of film thickness data and focus
pre-measurement data, efficient optimization of focus-related
parameters can be performed.
[0306] Further, according to the embodiment, as two types of
measurement and/or inspection results, measurement and/or
inspection results in the measurement and/or inspection processing
that is performed before and after a specific processing (e.g.
exposure processing) out of a plurality of processings are used.
Further, in analytical apparatus 170, the processing conditions are
optimized based on whether or not there is the correlation between
two types of measurement and/or inspection results
(existence/nonexistence of the correlation between film thickness
data and mark waveform data), whether or not an individual
measurement and/or inspection result is favorable (a result of
anterior inspection is normal and a result of posterior inspection
is abnormal), and the like. In this manner, by analyzing the
correlation or the difference between the measurement and/or
inspection results before and after a certain processing, analysis
with respect to each processing can be performed when the
processings of plural stages including at least a specific
processing are analyzed. Further, analysis of the etching
processing or the like can be performed based on the change in
measurement and/or inspection results (e.g. difference between a
pattern line width after the development processing and a pattern
line width after the etching processing).
[0307] Further, in the embodiment, in the case abnormality is not
detected in an anterior measurement and/or inspection processing
that is performed before a specific processing (such as the
exposure processing, the PEB processing, the development
processing, or the etching processing) and abnormality is detected
in a posterior measurement and/or inspection processing after the
specific processing, analytical apparatus 170 optimizes processing
conditions of a substrate processing that is performed prior to the
posterior measurement and/or inspection processing.
[0308] In this case, in the case abnormality is not detected in an
anterior measurement and/or inspection processing that is performed
before a specific processing and abnormality is detected in a
posterior measurement and/or inspections processing after the
specific processing, and also there is the correlation between
measurement and/or inspection result data of the anterior
measurement and/or inspection processing and measurement and/or
inspection result data of the posterior measurement and/or
inspection processing, analytical apparatus 170 optimizes
processing conditions of the anterior measurement and/or inspection
processing. This is because in the case there is the correlation
between measurement and/or inspection processings before and after
a certain processing and abnormality is detected only in the latter
measurement and/or inspection processing, it is considered that
abnormality can be detected in the former measurement and/or
inspection processing.
[0309] Further, according to the embodiment, in the case
abnormality is not detected in an anterior measurement and/or
inspection processing before a specific processing and abnormality
is detected in a posterior measurement and/or inspection processing
after the specific processing, analytical apparatus 170 acquires
data related to processing state of the processing that has been
performed before the posterior measurement and/or inspection
processing (e.g. trace data of exposure apparatus 100, 101), and
optimizes processing conditions based on the acquired data. Thus,
based on the processing state of the processing before the
posterior measurement and/or inspection processing including the
specific processing that has a high possibility of being a cause of
abnormality in the posterior measurement and/or inspection
processing, whether or not the processing is the cause of
abnormality can efficiently be identified.
[0310] Further, according to the embodiment, it is possible to
analyze data related to processing state of a specific processing
and optimize its processing conditions. That is, by analyzing a
factor in the order of proximity to the measurement and/or
inspection processing that has the highest possibility of being a
factor of abnormality, it becomes possible to identify the factor
of abnormality earlier.
[0311] However, it is also possible to further optimize processing
conditions of a substrate processing that is performed after the.
That is, even if abnormality is detected in the posterior
measurement and/or inspection processing and a factor of the
abnormality exists in the processing other than the posterior
measurement and/or inspection processing, in the case the
abnormality can be covered by the subsequent processing to some
extent, processing conditions of the subsequent processing that is
performed after the posterior measurement and/or inspection
processing may be optimized so as to cover the abnormality. For
example, in the case the entire line width of a device pattern is
thin because of an exposure dose or focus in exposure apparatus 100
or 101, processing conditions of the development processing or the
etching processing can be optimized so that the line width of a
device pattern (e.g. a pattern that is formed by a positive resist
portion that remains after development) by a formed resist image or
etching image (image formed after etching) becomes thick, for
example, the processing time can be shortened.
[0312] Further, according to the embodiment, while a series of
processes are performed to a plurality of wafers W, a relation
between two types of measurement and/or inspection result data and
information on optimization results of processing conditions is
registered in a database. By referring to the database, the
processing conditions that have the high, correlativity with two
types of measurement and/or inspection results can be grasped in
advance. Analytical apparatus 170 can preferentially optimize the
processing conditions having the high correlativity based on the
database.
[0313] Further, according to the embodiment, while a series of
processes are performed to a plurality of wafers, the regularity of
data related to measurement and/or inspection results is extracted.
Then, when optimizing processing conditions, the extracted
regularity is taken into consideration. Thus, optimization of the
processing conditions can be performed.
[0314] In the embodiment, the optimization processing of several
specific processing conditions has been described.
[0315] For example, in the embodiment, in the case there is the
correlation between film thickness data of films that are formed on
wafer W by the film formation/resist coating processing and
waveform data of the wafer marks on wafer W, at least one of a
measurement condition of the wafer marks in the alignment
pre-measurement and a film formation/coating condition can be
optimized so that the measurement results of the wafer marks on
wafer W are not affected by the thickness of films.
[0316] Further, in the embodiment, in the case there is the
correlation between film thickness data of films on wafer W and
surface shape data of the exposed surface of wafer W, a film
formation/coating condition or focus-related parameters (e.g. a
selection state of a focus sensor) can be optimized.
[0317] Further, in the embodiment, in the case a foreign substance
is not detected in appearance inspection (B) on wafer W before the
exposure processing and a foreign substance is detected in
appearance inspection (C) on wafer W after the exposure processing,
and also there is the correlation between these inspection data, an
inspection condition of foreign substances on wafer W before the
exposure processing can be optimized.
[0318] Further, in the embodiment, in the case a result of
appearance inspection of films formed on wafer W by the film
formation processing is normal and a result of appearance
inspection of the films on wafer W after the exposure processing is
abnormal, it is possible to acquire trace data of control error of
the exposure processing and optimize a processing condition of at
least one of the exposure processing and the liquid removable
processing based on the acquired trace data.
[0319] Further, in the case a result of appearance inspection of
wafer W before the PEB processing is normal and a result of
appearance inspection of wafer W after the PEB processing is
abnormal, data of processing state of the PEB processing is
acquired. Then, based on the acquired data of processing state, the
PEB processing is checked. In the case the judgment is made as a
result of this check that a factor of abnormality in appearance
inspection of wafer W is not the PEB processing, at least one of a
processing condition of the foreign substance inspection processing
of wafer W before the PEB processing, a processing condition of the
exposure processing and a processing condition of the liquid
removal processing can be optimized.
[0320] Further, in the embodiment, in the case a result of
appearance inspection before the PEB processing is normal and a
result of pattern defect inspection after the development
processing is abnormal, data of processing state of the development
processing and the postbake processing is acquired. Then, in the
case the judgment is made that neither the development processing
nor the postbake processing is a factor of abnormality in the
appearance inspection result based on the acquired data, at least
one of a processing condition of the foreign substance inspection
processing of the wafer before and after postbake processing, a
processing condition of the exposure processing and a processing
condition of the liquid removal processing can be optimized.
[0321] Further, in the embodiment, in the case shot flatness of the
exposed surface of wafer W before the exposure processing is normal
and a measurement result of a pattern line width of wafer W after
the development processing or the etching processing is abnormal,
data of processing state of at least one of the development
processing, the postbake processing and the exposure processing is
acquired and analyzed, and in the case the judgment is made that
none of the etching processing, the postbake processing and the
exposure processing is a factor of abnormality of the pattern line
width, at least one of a processing condition of the exposure
processing and a processing condition of the liquid removal
processing can be optimized.
[0322] Further, in the embodiment, in the case a measurement result
of a pattern line width on wafer W after the development processing
is normal and a measurement result of a pattern line width on wafer
W after the etching processing is abnormal, a processing state of
the etching processing is analyzed, and in the case the judgment is
made that the etching processing is not a factor of abnormality of
a pattern line width, at least one of a processing condition of the
exposure processing and a processing condition of the liquid
removal processing can be optimized.
[0323] Further, in the embodiment, based on the correlativity
between a change in inspection result of films on wafer W and a
measurement result of variation in a pattern line width after the
development processing or the etching processing, at least one of a
film formation/coating condition and a processing condition of the
exposure processing can be optimized.
[0324] Further, in the embodiment, in the case a result of
alignment pre-measurement before the exposure processing is normal
and a measurement result of overlay error of a pattern on wafer W
after the development processing or the etching processing is
abnormal, a processing condition of wafer alignment is optimized,
and alignment-related parameters can be optimized based on the
correlativity between an alignment pre-measurement result used for
alignment of wafer W before the exposure processing and overlay
error data of a pattern on wafer W after the development processing
or the etching processing.
[0325] Host 600 can execute these optimization processing
procedures in combination. In this case, host 600 can judge whether
to perform liquid immersion exposure or dry exposure, and based on
the judgment result, change the processing procedures.
[0326] Further, in the embodiment, since a processing content of at
least part of a plurality of processings is adjusted in accordance
with data related to whether the exposure processing is performed
by liquid immersion exposure or dry exposure, relevant processing
conditions can be appropriately adjusted in accordance with the
exposure that has been performed to a wafer, and the adjustment
results can be notified to a relevant processing apparatus.
[0327] In this case, in the adjustment process, at least one of an
inspection item, inspection sensitivity and an inspection condition
of the inspection processing can be switched depending on liquid
immersion exposure or dry exposure. For example, in the case the
exposure processing is performed by liquid immersion exposure, at
least one of a defect inspection to a pattern defect peculiar to
liquid immersion exposure, an abnormal inspection of abnormality of
wafer W due to liquid used in liquid immersion exposure, and a
remaining liquid inspection of liquid that adheres on wafer W after
liquid immersion exposure is added as an inspection item of the
inspection processing.
[0328] Further, in the embodiment, the pattern defect peculiar to
liquid immersion exposure includes a pattern defect due to a stain
adhering to an optical element of the projection optical system
that comes into contact with liquid, bubbles or a foreign substance
in liquid, and the appearance inspection of wafer W includes an
inspection related to a watermark, a stain due to elution of
material such as a resist film formed on wafer W into liquid, and
peeling of a resist film or the like on wafer W, and the remaining
liquid inspection includes a foreign substance inspection in the
remaining liquid on wafer W.
[0329] Further, in the case the exposure processing is performed by
liquid immersion exposure, the inspection sensitivity of the
inspection processing is set slightly higher than that of dry
exposure.
[0330] The inspection conditions of the inspection processing
include at least one of the wavelength of illumination light that
illuminates wafer W during the inspection, a detection method, a
detection optical system, and a detection algorithm. For example,
in the case the exposure processing is performed by liquid
immersion exposure, shortening of the wavelength of illumination
light, selection of a bright field out of bright and dark fields,
selection of an electron beam detection method out of an optical
detection method and the electron beam detection method, selection
of a confocal system, and selection of an image comparison
algorithm or a feature extraction algorithm out of the image
comparison algorithm, a design data comparison algorithm and the
feature extraction algorithm as a detection method are
performed.
[0331] Further, in the embodiment, analytical apparatus 170
computes the correlativity between data of monitoring results of a
liquid immersion portion during liquid immersion exposure and data
of inspection results of the inspection processing. Then, based on
the computed correlativity, at least one of an exposure condition
in the exposure processing and an inspection condition in the
inspection processing is optimized.
[0332] Measurement and/or inspection instrument 120 increases the
inspection frequency of the appearance inspection of the outer
circumference of wafer W. This is because there is the high
probability that abnormality occurs in the outer circumference of
wafer W in liquid immersion exposure. Meanwhile, by reducing the
inspection frequency accordingly for a portion where there is the
low probability that abnormality occurs, the decrease in throughput
can be prevented.
[0333] Further, in the embodiment, analytical apparatus 170 further
computes the correlativity between a period of time when each point
on wafer W is immersed in liquid (liquid immersion time) and data
of inspection results of the inspection processing. Then, based on
the correlativity, at least one of an exposure route on wafer W, a
film formation condition to wafer W and a liquid removal condition
on wafer W after liquid immersion exposure is adjusted.
[0334] Further, according to the embodiment, in the case the
exposure processing is performed by liquid immersion exposure, an
inspection processing of a topcoat film that protects a resist film
coated o wafer W from liquid is added to the inspection
contents.
[0335] Further, in the embodiment, data of inspection results of
the inspection processing and the like is registered in a database,
and based on the database, information on occurrence frequency of
abnormality at each point in wafer W is computed. Then, measurement
and/or inspection instrument 120 increases or decreases the
inspection frequency at each point in wafer W based on the
information on occurrence frequency of abnormality.
[0336] Incidentally, the process window may be changed between
liquid immersion exposure and dry exposure. Since the depth of
focus is different between dry exposure apparatus 100 and liquid
immersion exposure apparatus 101, even in the case the same device
pattern is transferred, the range of settable exposure dose and
focus is different, and therefore, the process window is preferably
controlled separately.
[0337] Incidentally, analytical apparatus 170 does not have to be
independent, and may also be equipped in host 600, exposure
apparatuses 100 and 101, track 200, measurement and/or inspection
instrument 120, and each apparatus (910, 920, 930 or 940) of device
manufacturing apparatus group 910. By the analytical apparatus
being equipped in the apparatuses described above, the exposure
apparatus, the track, the measurement and/or inspection instrument,
and the device manufacturing apparatus can have the ability to
optimize the processing conditions by itself.
[0338] Incidentally, in the embodiment above, although the case of
a transmissive type reticle R has been described, reticle R is not
limited to the transmissive type but may be a reflective type.
[0339] The unit that monitors a liquid immersion state is not
limited to the one described above. Any unit can be employed as far
as the unit can observe a liquid immersion state of a liquid
immersion area corresponding to exposure area IA.
[0340] Further, in the embodiment above, the case has been
described where light source for illumination 15 is installed in
the area adjacent to the liquid immersion area for illuminating the
liquid immersion area. However, the present invention is not
limited to this, and instead of light source for illumination 15,
for example, a light-emitting device may also be arranged on base
material 261, or when a line sensor that has the sensitivity to
exposure light EL is used as a line sensor of liquid immersion
monitor 260, the liquid immersion area may also be illuminated
using exposure light EL.
[0341] Further, in the embodiment above, measurement and/or
inspection instrument 120 is placed inline outside the track within
exposure cell 700, but measurement and/or inspection instrument 120
may be placed inline within track 200, or placed offline outside
exposure cell 700.
[0342] Further, in the embodiment above, measurement and/or
inspection instruments that perform the measurement and/or
inspection processings performed at the respective stages, that is,
a measurement and/or inspection instrument that performs a
appearance inspection of wafer W that has been exposed by liquid
immersion exposure, a measurement and/or inspection instrument that
performs an appearance inspection of wafer W to which the PEB
processing has been performed, a measurement and/or inspection
instrument that performs a pattern inspection of wafer W to which
the development processing has been performed, and the like may
also be different measurement and/or inspection instruments
respectively.
[0343] Further, in the embodiment above, removal unit T may also
perform the processing not only to wafer W after the exposure
processing but also to wafer W before the exposure processing. That
is, removal unit T may also be used for removing foreign substances
such as particles adhering to wafer W before exposure
processing.
[0344] Further, in the embodiment above, the case has been
described where an object that is subject to exposure in exposure
apparatus 100 or exposure apparatus main section S is a
semiconductor wafer for manufacturing a semiconductor. However, the
present invention is not limited to this, and for example, the
object may be a glass substrate for a display device, a ceramic
wafer for a thin film magnetic head, an original plate (synthetic
silica glass, silicon wafer) of a mask or a reticle used in an
exposure apparatus, or the like. In other words, exposure apparatus
100 or exposure apparatus mains section S is not limited to an
exposure apparatus for manufacturing semiconductor devices, but may
be exposure apparatuses such as an exposure apparatus for
manufacturing liquid crystal display devices, an exposure apparatus
for manufacturing displays, an exposure apparatus for manufacturing
thin film magnetic heads, an exposure apparatus for manufacturing
imaging devices, or an exposure apparatus for manufacturing
reticles or masks.
[0345] Moreover, the shape of an object that is subject to exposure
in exposure apparatus 100 or exposure apparatus main section S is
not limited to a circular shape, but may be, for example, a
rectangular shape. In this case, base material 261 of liquid
immersion monitor 260 that has also a rectangular shape is
used.
[0346] Further, in the embodiment above, exposure apparatus 100 or
exposure apparatus main section S may be a scanning exposure
apparatus (so-called scanning stepper) that exposes a pattern that
is formed on reticle R on wafer W while synchronously moving
reticle R and wafer W in a scanning direction, or a projection
exposure apparatus by a step-and-repeat method that exposes a
pattern formed on reticle R in one time in a state where reticle R
and wafer W are made static and sequentially performs step movement
of wafer W. Moreover, exposure apparatus 100 or exposure apparatus
main section S may be an exposure apparatus by a step-and-stitch
method.
[0347] Further, exposure apparatus 100 or exposure apparatus main
section S may be a twin-stage-type exposure apparatus that is
equipped with a plurality of wafer stages (e.g. refer to Kokai
(Japanese Unexamined Patent Application Publication) Nos. 10-163099
and 10-214783 (the corresponding U.S. Pat. No. 6,590,634), and
Kohyo (published Japanese translation of International Publication
for Patent Application) No. 2000-505958 (the corresponding U.S.
Pat. No. 5,969,441)). Besides, various processing apparatuses can
have a tandem configuration that is equipped with two processing
sections so as to null the dead time.
[0348] Incidentally, in exposure apparatus 100 or exposure
apparatus main section S in the embodiment above, a
light-transmissive type mask (reticle), which is a
light-transmissive substrate on which a predetermined
light-shielding pattern (or a phase pattern or a light attenuation
pattern) is formed, is used. Instead of this mask, however, as is
disclosed in, for example, U.S. Pat. No. 6,778,257, an electron
mask (which is also called a variable shaped mask, and includes,
for example, a DMD (Digital Micromirror Device) that is a type of a
non-emission type image display device (which is also called a
spatial light modulator) or the like) on which a light-transmitting
pattern, a reflection pattern, or an light-emitting pattern is
formed according to electronic data of the pattern that is to be
exposed may also be used. Further, the exposure apparatus may also
be an exposure apparatus that forms a device pattern on wafer W by
forming the interference fringe on wafer W, as is disclosed in the
pamphlet of International Publication No. 2001/035168.
[0349] Further, exposure apparatus main section S may be a liquid
immersion exposure apparatus that performs exposure in a state
where the entire surface of wafer W is immersed in liquid (e.g.
refer to Kokai (Japanese Unexamined Patent Application Publication)
Nos. 06-124873 and 10-303114, and the U.S. Pat. No. 5,825,043).
[0350] Incidentally, the above disclosures of the various
publications (including the pamphlets of the International
Publications) and the U.S. patent descriptions related to exposure
apparatuses and the like that are cited in the embodiment and
modified examples described above are each incorporated herein by
reference.
[0351] Further, in the embodiment above, the local liquid immersion
type exposure apparatus is exemplified, but part of the substrate
processing method and the substrate processing system, for example,
the substrate processing method and the substrate processing system
that optimize the inspection conditions based on at least one of a
film formation status of films that are formed by the film forming
apparatus and a film formation condition of the film forming
apparatus can also be applied to a non-liquid-immersion type
exposure apparatus. Accordingly, the type of exposure apparatus is
not limited to a liquid immersion type.
[0352] Further, in the embodiment above, the programs related to
the present invention are each recorded in a flash memory, but may
be recorded in another information recoding medium (such as CD,
magnet-optical disk, DVD, memory card, USB memory, or diskette).
Further, the programs related to the present invention may also be
transferred to each flash memory via a network (such as LAN,
intranet or internet).
[0353] While the above-described embodiment of the present
invention is the presently preferred embodiment thereof, those
skilled in the art of lithography systems will readily recognize
that numerous additions, modifications, and substitutions may be
made to the above-described embodiment without departing from the
spirit and scope thereof. It is intended that all such
modifications, additions, and substitutions fall within the scope
of the present invention, which is best defined by the claims
appended below.
* * * * *