U.S. patent application number 13/306487 was filed with the patent office on 2012-05-31 for light-emitting device, light mixing device and manufacturing methods thereof.
This patent application is currently assigned to Epistar Corporation. Invention is credited to Min-Hsun Hsieh, Ming-Chi Hsu, Tsung-Xian Lee, Chien-Yuan Wang, Chih-Ming Wang, Han-Min Wu.
Application Number | 20120132944 13/306487 |
Document ID | / |
Family ID | 46126029 |
Filed Date | 2012-05-31 |
United States Patent
Application |
20120132944 |
Kind Code |
A1 |
Hsieh; Min-Hsun ; et
al. |
May 31, 2012 |
LIGHT-EMITTING DEVICE, LIGHT MIXING DEVICE AND MANUFACTURING
METHODS THEREOF
Abstract
Disclosed is a light-emitting device comprising: a carrier; a
light-emitting element disposed on the carrier; a first light guide
layer covering the light-emitting element, and disposed on the
carrier; a wavelength conversion and light guide layer covering the
first light guide layer and the light-emitting element, and
disposed on the carrier; and a low refractive index layer disposed
between the first light guide layer and the wavelength conversion
and light guide layer; wherein the first light guide layer
comprises a gradient refractive index, the wavelength conversion
and light guide layer comprises a dome shape structure and is used
to convert a wavelength of light emitted from the light-emitting
element and transmit light, and the low refractive index layer is
used to reflect light from the wavelength conversion and light
guide layer.
Inventors: |
Hsieh; Min-Hsun; (Hsinchu,
TW) ; Wang; Chien-Yuan; (Hsinchu City, TW) ;
Lee; Tsung-Xian; (Hsinchu, TW) ; Wang; Chih-Ming;
(Hsinchu, TW) ; Hsu; Ming-Chi; (Hsinchu, TW)
; Wu; Han-Min; (Hsinchu, TW) |
Assignee: |
Epistar Corporation
Hsinchu
TW
|
Family ID: |
46126029 |
Appl. No.: |
13/306487 |
Filed: |
November 29, 2011 |
Current U.S.
Class: |
257/98 ;
257/E33.061; 438/27 |
Current CPC
Class: |
H01L 33/46 20130101;
H01L 33/507 20130101; H01L 2933/0091 20130101; H01L 33/56 20130101;
H01L 33/58 20130101 |
Class at
Publication: |
257/98 ; 438/27;
257/E33.061 |
International
Class: |
H01L 33/50 20100101
H01L033/50 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 29, 2010 |
TW |
099141373 |
Nov 29, 2010 |
TW |
099141375 |
Claims
1. A light-emitting device comprising: a carrier; a light-emitting
element disposed on the carrier; a first light guide layer covering
the light-emitting element and disposed on the carrier; a
wavelength conversion and light guide layer covering the first
light guide layer and the light-emitting element, disposed on the
carrier, and used to convert the light emitted from the
light-emitting element and transmit the light; and a low refractive
index layer disposed between the first light guide layer and the
wavelength conversion and light guide layer to reflect the light
from the wavelength conversion and light guide layer.
2. The light-emitting device as claimed in claim 1, wherein the
first light guide layer comprises a gradient refractive index.
3. The light-emitting device as claimed in claim 1, wherein the
first light guide layer and/or the low refractive index layer
comprise/comprises a porous material layer.
4. The light-emitting device as claimed in claim 1, wherein the
wavelength conversion and light guide layer comprises a wavelength
conversion layer and a second light guide layer, and the wavelength
conversion layer is disposed on an inner or outer surface of the
second light guide layer.
5. The light-emitting device as claimed in claim 4, wherein the
second light guide layer comprises a gradient refractive index,
and/or the second light guide layer is a porous material layer.
6. The light-emitting device as claimed in claim 1, wherein the
wavelength conversion and light guide layer comprises a gradient
refractive index, and the wavelength conversion and light guide
layer comprises, in an outward order, a second light guide layer, a
wavelength conversion layer, and a third light guide layer.
7. The light-emitting device as claimed in claim 4, wherein the
wavelength conversion layer comprises a phosphor layer.
8. The light-emitting device as claimed in claim 7, wherein the
wavelength conversion layer comprises a ceramic phosphor material
for a yellow light, or a ceramic phosphor material for a light of
at least two colors.
9. The light-emitting device as claimed in claim 1, wherein the low
refractive index layer comprises a layer of air.
10. The light-emitting device as claimed in claim 1, wherein the
low refractive index layer comprises a refractive index smaller
than the ones of first light guide layer and the wavelength
conversion and light guide layer.
11. The light-emitting device as claimed in claim 1, wherein the
first light guide layer and/or the wavelength conversion and light
guide layer comprise/comprises a dome shape structure.
12. The light-emitting device as claimed in claim 6, wherein the
wavelength conversion layer comprises a phosphor layer.
13. A light-emitting device comprising: a carrier; a light-emitting
element disposed on the carrier; and a wavelength conversion and
light guide layer covering the light-emitting element, disposed on
the carrier, and used to convert a wavelength of the light emitted
from the light-emitting element and transmit the light; wherein the
wavelength conversion and light guide layer comprises a transparent
conductive layer.
14. The light-emitting device as claimed in claim 13, wherein the
transparent conductive layer comprises metal oxide.
15. The light-emitting device as claimed in claim 13, wherein the
wavelength conversion and light guide layer comprises a wavelength
conversion layer, and the wavelength conversion layer is disposed
on an inner or outer surface of the transparent conductive
layer.
16. The light-emitting device as claimed in claim 15, wherein the
wavelength conversion layer comprises a phosphor layer.
17. The light-emitting device as claimed in claim 13, wherein the
wavelength conversion and light guide layer further comprises a
second light guide layer, and the transparent conductive layer is
disposed on an inner or outer surface of the second light guide
layer.
18. A method to manufacture a light-emitting device comprising:
providing a carrier; disposing a light-emitting element on the
carrier; and forming a wavelength conversion and light guide layer
covering the light-emitting element, disposed on the carrier, and
used to convert a wavelength of the light emitted from the
light-emitting element and transmit the light; wherein the
wavelength conversion and light guide layer comprises a transparent
conductive layer.
19. The method to manufacture a light-emitting device as claimed in
claim 18, wherein the step of forming a wavelength conversion and
light guide layer comprises forming a wavelength conversion layer
by an electrophoresis method after the transparent conductive layer
is formed.
20. The method to manufacture a light-emitting device as claimed in
claim 18, wherein the transparent conductive layer is formed by
coating a solution comprising the powder of ITO on a glass mold
provided.
Description
TECHNICAL FIELD
[0001] The application relates to a light-emitting device, and in
particular to a light-emitting device with a high light extraction
efficiency.
DESCRIPTION OF BACKGROUND ART
[0002] In recent years, because of the increasing attention to
energy issue, many new energy-efficient lighting tools are
developed. Among them, the light-emitting diode (LED) has features
such as high luminous efficiency, less power consumption,
mercury-free and long life time, and becomes a very promising
lighting tool for the next generation.
[0003] For the white light LED for lighting, there are many
references discussing different producing methods. One method is to
use the LED chip and phosphor powder. For example, blue light
emitted from a blue LED chip is used to excite YAG (Yttrium
Aluminum Garnet, Y.sub.3Al.sub.5O.sub.12) phosphor to emit yellow
light, and a mixture of both the blue and yellow lights forms white
light.
[0004] There are two common methods for phosphor coating, one is
conformal coating method, and the other one is the remote phosphor
method. As shown in FIG. 1, the conformal coating is to coat the
phosphor 103 directly on each LED chip 102. Because the phosphor is
coated directly on the LED chip 102, the thickness is much uniform.
However, because the light from the phosphor is absorbed by the LED
chip 102 and the carrier 101, the overall luminous efficiency is
reduced. In addition, because the phosphor 103 is in direct contact
with the LED chip 102, when the LED chip 102 operates to result in
a high temperature environment of 100.degree. C. to 150.degree. C.,
the phosphor layer deteriorates gradually, and the luminous
efficiency is affected.
[0005] The remote phosphor solves the problem of the conformal
coating. FIG. 2 shows a light-emitting device of an LED chip with
remote phosphor. The light-emitting device 20 comprises a carrier
201, an LED chip 202, a hemispheric package resin 204, and the
phosphor layer 203 coated thereon. As shown in FIG. 2, as the
phosphor layer 203 is separated from the LED chip 202, the problem
that light from the phosphor layer 203 is absorbed directly by the
LED chip 102 is avoided. And because the phosphor layer 203 is
disposed away from the LED chip 202, it is more difficult for
phosphor powders in the phosphor layer 203 to deteriorate due to
the high temperature environment when the LED chip 202
operates.
[0006] However, the luminous efficiency is usually affected by the
resin in the remote phosphor structure. FIG. 3A shows the
propagating path of light after being emitted from the LED chip.
According to Snell's law, as the refractive index (denoted by n) of
the LED chip 302 is 2.4, and the refractive index n of the package
resin 304 is 1.5, when light from the LED chip is incident to the
surface of the package resin 304 with an angle less than the
critical angle .theta..sub.c, like the condition shown by path A,
the light is refracted and enters into the package resin 304. But
when light from the LED chip is incident to the surface of the
package resin 304 with an angle larger than the critical angle
.theta..sub.c, like the condition shown by path B, the light is
totally and internally reflected in the LED chip (Total Internal
Reflection, TIR) and is absorbed by the LED chip 302. Therefore,
when the refractive index difference between the LED chip and the
package materials outside the LED chip is too large, the luminous
efficiency of the LED chip is greatly affected.
[0007] In addition, there is the scattering effect of the particles
of phosphors powder as shown in FIG. 3B. The phosphor powder
particles 303a are excited to emit light of a different color by
the light from the LED chip. However, the light emitted from the
phosphor particles 303a propagates in all directions, and
therefore, part of the light from phosphor powder particles 303a is
incident toward the surface of the resin package 304. This results
in inward-propagating light rather than outward-propagating light,
and thus the luminous efficiency is reduced.
SUMMARY OF THE DISCLOSURE
[0008] Disclosed is a light-emitting device comprising: a carrier;
a light-emitting element disposed on the carrier; a first light
guide layer covering the light-emitting element, and disposed on
the carrier; a wavelength conversion and light guide layer covering
the first light guide layer and the light-emitting element, and
disposed on the carrier; and a low refractive index layer disposed
between the first light guide layer and the wavelength conversion
and light guide layer; wherein the first light guide layer
comprises a gradient refractive index, the wavelength conversion
and light guide layer comprises a dome shape structure and is used
to convert a wavelength of light emitted from the light-emitting
element and transmit light, and the low refractive index layer is
used to reflect light from the wavelength conversion and light
guide layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1 illustrates a white light light-emitting device using
the conformal phosphor coating method known in the prior art.
[0010] FIG. 2 illustrates a white light light-emitting device using
the remote phosphor method known in the prior art.
[0011] FIG. 3A illustrates the propagating path of light after
being emitted from the LED chip.
[0012] FIG. 3B illustrates the scattering effect of the particles
of phosphors powders.
[0013] FIG. 4 illustrates the light-emitting device in accordance
with the first embodiment of the present application.
[0014] FIG. 5A illustrates the projection of the first light guide
layer on the carrier in accordance with the first embodiment of the
present application.
[0015] FIG. 5B illustrates another projection of the first light
guide layer on the carrier in accordance with the first embodiment
of the present application.
[0016] FIG. 6 illustrates the modified light-emitting device in
accordance with the first embodiment of the present
application.
[0017] FIG. 7 illustrates the first light guide layer in accordance
with the first embodiment of the present application.
[0018] FIG. 8 illustrates the formation of white light in
accordance with the first embodiment of the present
application.
[0019] FIG. 9 illustrates the light-emitting device in accordance
with the second embodiment of the present application.
[0020] FIG. 10 illustrates the light-emitting device in accordance
with the third embodiment of the present application.
[0021] FIG. 11 illustrates the first light guide layer in
accordance with the fourth embodiment of the present
application.
[0022] FIG. 12 illustrates the light-emitting device in accordance
with fifth embodiment of the present application.
[0023] FIGS. 13A and 13B illustrate the forming method in
accordance with the sixth embodiment of the present
application.
[0024] FIG. 14 illustrates the light-emitting device in accordance
with the eighth embodiment of the present application.
[0025] FIG. 15 illustrates the electrophoresis method in accordance
with the eighth embodiment of the present application.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0026] The application is illustrated as following with the
schematic figures. The embodiments are demonstrated to make a
person of ordinary skill in the art understand the spirit of the
present application. The present application is not limited to the
shown embodiments, but can be alternated by following the spirit of
the application. The width, length, thickness and other similar
dimension is enlarged to facilitate the illustration, if necessary.
For all the figures, elements denoted by the same element symbols
are the same elements.
[0027] It is particularly noted that when the specification
describes a component or a layer of material is disposed on or
connected to another component or another layer of material, it may
be the either the case that the component or the layer of material
is directly disposed on or connect to another component or another
layer of material, or the case that the component or the layer of
material is indirectly disposed on or connected to another
component or another layer of material, that is, still another
component or still another layer of material is between them. To
the contrary, when the specification describes a component or a
layer of material is directly disposed on or connected to another
component or another layer of material, no component or layer of
material is between them.
First Embodiment
[0028] FIG. 4 shows the light-emitting device 40 of the first
embodiment of the present application. The light-emitting device 40
comprises a carrier 401 and a light-emitting element 402 disposed
on the carrier 401. The light-emitting device 40 further comprises
a first light guide layer 404 covering the light-emitting element
402 and is disposed on the carrier 401. The light-emitting device
40 further comprises a wavelength conversion and light guide layer
410. The wavelength conversion and light guide layer 410 comprises
a second light guide layer 406 and a wavelength conversion layer
403.
[0029] As shown in FIG. 4, the first light guide layer 404 is, for
example, a dome shape structure. Specifically, the first light
guide layer 404 is a hemisphere shape structure. Please refer to
FIG. 5A and FIG. 5B, the first light guide layer 404 is not limited
to the hemispherical structure, and its projection on the surface
of carrier 401 may be a circular or an oval. In addition to the
dome shape structure, in other embodiments, the first light guide
layer 404 may also be a structure of other shapes.
[0030] The second light guide layer 406 is disposed on the carrier
401, and covers the first light guide layer 404 and the
light-emitting element 402. In addition, a low refractive index
layer 405 is disposed between the wavelength conversion layer 403
and the first light guide layer 404. The second light guide layer
406 is, for example, a dome shape structure. Specifically, the
second light guide layer 406 is a hemisphere shape structure. As
the first light guide layer 404 shown in FIG. 5A and FIG. 5B, the
second light guide layer 406 is not limited to the hemispherical
structure, and the projection of the second light guide layer 406
on the surface of the carrier 401 may be a circular or an oval. In
addition to the dome shape structure illustrated in this
embodiment, in other embodiments, the second light guide layer 406
may also be a structure of other shapes.
[0031] In this embodiment, the diameter (or longer diameter of the
oval) of the projection of the first light guide layer 404 on the
surface of the carrier 401 is preferred to be greater than or equal
to 2.5 times of the length of the light-emitting element 402, and
the light-emitting element 402 is disposed in the center of the
shape of the projection of the first light guide layer 404 on the
surface of the carrier 401. Therefore, the reflection of light
occurring on the surface of the first light guide layer 404 can be
reduced, and the light is radiated out. The diameter (or longer
diameter of the oval) of the projection of the second light guide
layer 406 on the surface of the carrier 401 is preferred to be
greater than or equal to 2 times of the diameter (or longer
diameter of the oval) of the projection of the first light guide
layer 404 on the surface of the carrier 401. Therefore, the
reflection of light occurring on the surface of the second light
guide layer 406 can be reduced.
[0032] In this embodiment, the carrier 401 may be a carrier for
package, or when the light-emitting element 402 and a carrier for
package are to be formed as a light-emitting module, the carrier
401 may be a printed circuit board, and the light-emitting element
402 may be a blue GaN LED chip. Although a blue LED chip is used in
this embodiment, an LED chip that emits other color may be used if
necessary. In addition, the light-emitting element 402 is not
limited to be only one LED chip, but may be a plurality of LED
chips. The plurality of LED chips may be LED chips of different
colors, for example, a blue LED chip and a red LED chip, or may be
LED chips of same color, for example, a blue LED chip and another
blue LED chip.
[0033] FIG. 6 shows a light-emitting device of the first embodiment
of the present application. As shown in the figure, the shape of
the light-emitting element 402 is not limited to a common shape as
a cube, but may be a hemisphere shape. Here, the light-emitting
element 402 may be replaced by other types of light-emitting
devices, for example, an organic light-emitting diode (OLED). That
is, the blue GaN LED chip may be replaced by the blue OLED.
[0034] FIG. 7 shows the schematic drawing of the first light guide
layer 404 in this embodiment. The first light guide layer 404 is a
layer of material that enhances the light extraction efficiency. In
more details, after the first light guide layer 404 is disposed on
the light-emitting element 402, the light extraction efficiency is
better than the one when the light-emitting element 402 is in
direct contact with the air. In this embodiment, the first light
guide layer 404 comprises a plurality of layers of material, and
has a gradient refractive index (GRIN). As shown in the figure, the
first light guide layer 404 comprises a first refractive index
layer 404a, a second refractive index layer 404b, and a third
refractive index layer 404c. Wherein, the first refractive index
layer 404a comprises a refractive index n.sub.a, the second
refractive index layer 404b comprises a refractive index n.sub.b,
and the third refractive index layer 404c comprises a refractive
index n.sub.c, wherein n.sub.a>n.sub.b>n.sub.c.
[0035] In this embodiment, the first refractive index layer 404a is
silicon nitride (Si.sub.3N.sub.4), and the refractive index n.sub.a
is 1.95. The second refractive index layer 404b is silicon
oxynitride (SiON) or aluminum oxide (Al.sub.2O.sub.3), and the
refractive index n.sub.b is 1.7. The third refractive index layer
404c is silicone, and the refractive index n.sub.c is 1.45.
Although the first light guide layer 404 comprises silicon nitride,
silicon oxynitride, and silicone in this embodiment, other
materials may be used in other embodiments. For example, other
materials may be glass (the refractive index is 1.5 to 1.9), resin
(the refractive index is 1.5 to 1.6), diamond like carbon (DLC, the
refractive index is 2.0 to 2.4), titanium oxide (TiO.sub.2, the
refraction index is 2.2 to 2.4), silicon oxide (SiO.sub.2, the
refractive index is 1.5 to 1.7) or magnesium fluoride (MgF, the
refractive index is 1.38). In this embodiment, the refractive index
of the blue GaN LED chip is 2.4. When the refractive index of the
first refractive index layer 404a of the first light guide layer
404 is 1.95, the refractive index changes from 2.4 to 1.95 at the
interface of the light-emitting element 402 and the first light
guide layer 404, and therefore, the refractive index difference is
small, the total reflection of light is reduced effectively.
[0036] In addition, please refer to FIG. 4, in this embodiment, the
outer side of the first light guide layer 404 of the light-emitting
device 40 is the low refractive index layer 405. In this
embodiment, the low refractive index layer 405 is a layer of air.
The refractive index of the layer of air is n=1. Thus, the
refractive index changes from 1.45 to 1.0 at the interface of the
first light guide layer 404 and the low refractive index layer 405,
and the total reflection of light caused by the large difference in
refractive index is also reduced effectively. In addition, the
wavelength conversion layer 403 is a material to converse the
wavelength of incident light in this embodiment, such as phosphor.
In this embodiment, the wavelength conversion layer 403 is a yellow
phosphor layer. Please refer to FIG. 8, blue light L.sub.B emitted
from the blue GaN LED chip (not shown in the figure) propagates
through the first light guide layer (not shown in the figure) and
the low refractive index layer (not shown in figure) and is
incident to the wavelength conversion layer 403, it excites the
phosphor powder particles 403a, such as YAG or TAG, of the yellow
phosphor layer, and yellow light L.sub.Y is emitted. The mixture of
blue light L.sub.B emitted from the blue GaN LED chip and yellow
light L.sub.Y emitted from the yellow phosphor layer form white
light L.sub.W. As the combination of the first light guide layer
404, the low refractive index layer 405, and the wavelength
conversion and light guide layer 410 also has a function of light
mixing, the combination of the three structures can be deemed as a
light mixing device. The light mixing device may further comprise
the carrier 401 on which the light-emitting element 402 is
disposed.
[0037] In this embodiment, the wavelength conversion layer 403 is
formed on the inner side of the second light guide layer 406. The
second light guide layer 406 is a layer of material which enhances
the light extraction efficiency. In more details, after the second
light guide layer 406 is disposed on the light-emitting element
402, the light extraction efficiency is better than the one when
the light-emitting element 402 is in direct contact with the air.
In this embodiment, the second light guide layer 406 comprises a
plurality of layers of material, and has a gradient refractive
index (GRIN). Specifically, the second light guide layer 406 has a
fourth refractive index layer and a fifth refractive index layer
(not shown in the figure). The fourth refractive index layer is
silicon oxynitride (SiON), and the refractive index is 1.7. The
fifth refractive index layer is silicone, and the refractive index
is 1.45. Although silicon oxynitride layer and silicone layer are
used for the second light guide layer 406 in this embodiment, other
materials may be used in other embodiments. For example, other
materials may be glass (the refractive index is 1.5 to 1.9), resin
(the refractive index is 1.5 to 1.6), diamond like carbon (DLC, the
refractive index is 2.0 to 2.4), titanium oxide (TiO.sub.2, the
refraction index is 2.2 to 2.4), silicon oxide (SiO.sub.2, the
refractive index is 1.5 to 1.7) or magnesium fluoride (MgF, the
refractive index is 1.38). In addition, in other embodiments, the
second light guide layer 406 may be a lens with a function to
converge light, or a layer of material with a refractive index
between the ones of a wavelength conversion layer 403 and the low
refractive index layer 405, such as resin or glass. In this
embodiment, the refractive index of the yellow phosphor layer is
1.8. The refractive index changes from 1.8 to 1.7 at the interface
of the wavelength conversion layer 403 and the second light guide
layer 406, and therefore the total reflection of light caused by
large refractive index difference is reduced.
[0038] The low refractive index layer 405 is for reflecting light
from the wavelength conversion and light guide layer 410. Here, the
term of "reflecting" means that when the light from the wavelength
conversion and light guide layer 410 is incident on the interface
of the low refractive index layer 405, the proportion of the light
that is totally and internally reflected (Total Internal
Reflection, TIR) is greater than the proportion of the light that
is refracted. As most of the light is totally and internally
reflected rather than being refracted, the low refractive index
layer 405 has a function for light reflection.
[0039] It is noted that the wavelength conversion layer 403 has a
refractive index of n=1.8 in this embodiment, and the layer of air
as a low refractive index layer 405 has a refractive index n=1.
According to Snell's law, the critical angle is
.theta..sub.c=arcsin (n.sub.1/n.sub.2), wherein n.sub.1 is the
refractive index of the low light density medium, and n.sub.2 is
the refractive index of the high light density medium, so when the
light propagates from the wavelength conversion layer 403 into the
low refractive index layer 405, the critical angle is
.theta..sub.c=arcsin (1/1.8)=arcsin (0.56).apprxeq.33.degree.. That
is, when the angle of incidence of light>33.degree., the light
is totally reflected.
[0040] Therefore, because of the existence of the low refractive
index layer 405, when the yellow light from the wavelength
conversion and light guide layer 410 or the light scattered by the
phosphor powder particles is incident on the surface of the low
refractive index layer 405, most of the light is totally and
internally reflected (Total Internal Reflection, TIR) because of
the low refractive index of the low refractive index layer 405.
[0041] The method to produce the light-emitting device 40 in the
embodiment is illustrated as the following:
[0042] First, the light-emitting element 402 is formed on the
carrier 401. The carrier 401 may be a carrier for package, or when
the light-emitting element 402 and a carrier for package are to be
formed as a light-emitting module, the carrier 401 may be a printed
circuit board, and the light-emitting element 402 may be a blue GaN
LED chip.
[0043] Then, a thin film is formed on the light-emitting element
402 by chemical vapor deposition method. The thin film is a stack
formed subsequently to cover the light-emitting element 402 by a
silicon nitride layer (not shown) and a silicon oxynitride layer
(not shown). Another silicone layer (not shown) is coated on the
silicon oxynitride layer. The silicone layer is then cured, and the
stack of silicon nitride layer/silicon oxynitride layer/silicone
layer is formed as the first light guide layer 404. In this
embodiment, the method to form the silicon nitride layer is, for
example, a chemical vapor deposition method with gases such as
silane (SiH.sub.4) and ammonia (NH.sub.3) as the reactive gases.
The method to form the oxynitride layer is, for example, a chemical
vapor deposition method with gases such as silane (SiH.sub.4) and
nitrous oxide (N.sub.2O) as the reactive gases. As the chemical
vapor deposition method is known in this technical field, the
details are not illustrated here.
[0044] In addition, a phosphor layer is coated on a hemispherical
mold to be used as the wavelength conversion layer 403. The
hemispherical mold is, for example, a hemispherical glass mold. The
method to coat the phosphor layer is, for example, mixing a yellow
phosphor powder uniformly with the glue, coating the mixture on the
surface of the mold, and making the coating cured.
[0045] Then, an oxynitride silicone layer is formed on the surface
of the phosphor layer by a chemical vapor deposition method, and a
silicone layer is coated and cured to form a stack of a silicon
oxynitride layer/a silicone layer as the second light guide layer
406. Then, the hemispherical mold is removed so the wavelength
conversion and light guide layer 410 of the light-emitting device
40 is obtained in this embodiment.
[0046] Afterwards, the wavelength conversion and light guide layer
410 is adhered to the surface of the carrier 401 to cover the first
light guide layer 404. The method to adhere the wavelength
conversion and light guide layer 410 to the carrier 401 is, for
example, applying an adhesive material to the rim of the second
light guide layer 406 and then adhering the wavelength conversion
and light guide layer 410 to the surface of the carrier 401. As the
diameter of the projection of the second light guide layer 406 on
the surface of the carrier 401 is greater than or equal to two
times of the diameter of the projection of the first light guide
layer 404 on the surface of the carrier 401, there is a layer of
air between them. This layer of air can be the low refractive index
layer 405.
Second Embodiment
[0047] FIG. 9 shows the light-emitting device 40 of the second
embodiment of the present application. The light-emitting device 40
in the second embodiment comprises a carrier 401, a light-emitting
element 402, a first light guide layer 404, a low refractive index
layer 405, and a wavelength conversion and light guide layer 420.
The carrier 401, the light-emitting element 402, the first light
guide layer 404, and the low refractive index layer 405 are the
same as those in the first embodiment, and are not illustrated
again.
[0048] The wavelength conversion and light guide layer 420 in this
embodiment comprises a second light guide layer 416 and a
wavelength conversion layer 413. The wavelength conversion layer
413 is formed on the outer surface of the second light guide layer
416. The second light guide layer 416 is a layer of material which
enhances the light extraction efficiency. In more details, after
the second light guide layer 416 is disposed on the light-emitting
element 402, the light extraction efficiency is better than the one
when the light-emitting element 402 is in direct contact with the
air. In this embodiment, the second light guide layer 416 comprises
a plurality of layers of material, and has a gradient refractive
index (GRIN). Specifically, the second light guide layer 416
comprises a silicon oxynitride (SiON) layer and a silicon
oxynitride (SiON) layer, and the refractive index is 1.95 and 1.7,
respectively. Although a silicon oxynitride (SiON) layer and a
silicon oxynitride (SiON) layer are used for the second light guide
layer 416 in this embodiment, other materials may be used in other
embodiments. For example, other materials may be glass (the
refractive index is 1.5 to 1.9), resin (the refractive index is 1.5
to 1.6), diamond like carbon (DLC, the refractive index is 2.0 to
2.4), titanium oxide (TiO.sub.2, the refraction index is 2.2 to
2.4), silicon oxide (SiO.sub.2, the refractive index is 1.5 to 1.7)
or magnesium fluoride (MgF, the refractive index is 1.38).
[0049] In this embodiment, the wavelength conversion layer 413 is a
phosphor layer. The method to prepare the phosphor layer in this
embodiment is mixing a yellow phosphor, such as YAG
(Y.sub.3Al.sub.5O.sub.12) or TAG (Tb.sub.3Al.sub.5O.sub.12), with
silicone with a refractive index of 1.45 to obtain the phosphor
layer having a refractive index of 1.6.
Third Embodiment
[0050] FIG. 10 shows the light-emitting device 40 of the third
embodiment of the present application. The light-emitting device 40
in the third embodiment comprises a carrier 401, a light-emitting
element 402, a first light guide layer 404, a low refractive index
layer 405, and a wavelength conversion and light guide layer 430.
The carrier 401, the light-emitting element 402, the first light
guide layer 404, and the low refractive index layer 405 are the
same as those in the first embodiment, and are not illustrated
again. The wavelength conversion and light guide layer 430 in this
embodiment comprises a second light guide layer 426, a wavelength
conversion layer 423, and a third light guide layer 427. The
wavelength conversion layer 423 is formed between the second light
guide layer 426 and the third light guide layer 427. The refractive
index of the second light guide layer 426 is n.sub.i, the
refractive index of the wavelength conversion layer 423 is n.sub.j,
and the refractive index of third light guide layer 427 is n.sub.k,
wherein n.sub.i>n.sub.j>n.sub.k. In other words, the
wavelength conversion and light guide layer 430 in this embodiment
has a gradient refractive index (GRIN).
[0051] The second light guide layer 426 and the third light guide
layer 427 are layers of material which enhances the light
extraction efficiency, respectively. In more details, after the
second light guide layer 426 and/or the third light guide layer 427
is disposed on the light-emitting element 402, the light extraction
efficiency is better than the one when the light-emitting element
402 is in direct contact with the air. In this embodiment, the
second light guide layer 426 comprises a silicon nitride layer, and
the refractive index is 1.95. The third light guide layer 427 is
silicon, and the refractive index is 1.45. Although a silicon
nitride layer is used for the second light guide layer 426 in this
embodiment, other materials may be used in other embodiments. For
example, other materials may be glass (the refractive index is 1.5
to 1.9), resin (the refractive index is 1.5 to 1.6), diamond like
carbon (DLC, the refractive index is 2.0 to 2.4), titanium oxide
(TiO.sub.2, the refraction index is 2.2 to 2.4), silicon oxide
(SiO.sub.2, the refractive index is 1.5 to 1.7) or silicon
oxynitride (the refractive index is 1.7).
[0052] In this embodiment, the value of refractive index of the
wavelength conversion layer 423 is between those of the second
light guide layer 426 and the third light guide layer 427. For
example, the wavelength conversion layer 423 may be a phosphor
layer formed by mixing a yellow phosphor with epoxy resin, and has
a refractive index of 1.7.
[0053] In this embodiment, the third light guide layer 427 is
silicon, but other materials may be used in other embodiments. For
example, other materials may be glass (the refractive index is 1.5
to 1.9), resin (the refractive index is 1.5 to 1.6), titanium oxide
(TiO.sub.2, the refraction index is 2.2 to 2.4), silicon oxide
(SiO.sub.2, the refractive index is 1.5 to 1.7) or magnesium
fluoride (MgF, the refractive index is 1.38).
Fourth Embodiment
[0054] FIG. 11 shows the first light guide layer 404 of the fourth
embodiment of the present application. The difference between the
fourth embodiment and the first embodiment is a porous material is
used for forming the first light guide layer 404 and the second
light guide layer 406, and the rest is the same as those in the
first embodiment.
[0055] As shown in FIG. 11, the first light guide layer 404
comprises three layers: the first pore density layer 404e, the
second pore density layer 404f, and the third pore density layer
404g, wherein the pore density of the first pore density layer
404e<the pore density of the second pore density layer
404f<the pore density of the third pore density layer 404g. That
is, the first light guide layer 404 has a gradient pore density. As
the lower the pore density is, the higher the refractive index is,
the refractive index of the first pore density layer 404e>the
refractive index of the second pore density layer 404f>the
refractive index of the third pore density layer 404g. Therefore,
the first light guide layer 404 has a gradient refractive
index.
[0056] Similarly, the second light guide layer 406 in this
embodiment may be a layer of material with various pore
densities.
[0057] Specifically, the first light guide layer 404 in this
embodiment is a porous titanium oxide layer with a gradient pore
density. The method to form the porous titanium oxide layer is, for
example, Glancing Angle Deposition (GLAD) method. The principle of
GLAD method is that during the electron-beam evaporation process,
the tilt angle of the carrier board is controlled, and thereby the
incident angle of the vapor to the carrier board is controlled to
grow a porous material. The porous material grown by this method is
also named as a Nano-Rods material.
[0058] The vapor source used in this embodiment is, for example,
titanium oxide (Ti.sub.3O.sub.5). The deposition process comprises
three steps: the first step is to form the first pore density layer
404e with a lower pore density, the second step is to form the
second pore density layer 404f with a higher pore density, and the
third step is to form the third pore density layer 404g with a
highest pore density. In the first step, the incident angle of the
vapor (titanium oxide) is .theta..sub.e (not shown). In the second
step, the incident angle of the vapor (titanium oxide) is
.theta.O.sub.f (not shown). In the third step, the incident angle
of the vapor (titanium oxide) is .theta..sub.g (not shown), wherein
.theta..sub.e<.theta..sub.f<.theta..sub.g. Formed by this
method, the first pore density layer 404e is a porous titanium
oxide layer with a refractive index n=1.9, the second pore density
layer 404f is a porous titanium oxide layer with a refractive index
n=1.7, and the third pore density layer 404g is a porous titanium
oxide layer with a refractive index n=1.45.
[0059] Similarly, when a similar method described as the above is
practiced with silicon oxide (SiO.sub.2) as the vapor source, a
porous silicon oxide layer with a gradient refractive index may be
formed. In other embodiments, the first pore density layer 404e,
the second pore density layer 404f, or the third pore density layer
404g may be a porous silicon oxide layer or other porous material
layer.
[0060] It is noted that, as the porous silicon oxide layer formed
by the GLAD method may have a lower refractive index, for example,
n=1.05, which is close to the refractive index of air (n=1).
Therefore, the low refractive index layer 405 in this embodiment
may be a porous silicon oxide layer.
[0061] As the GLAD method is commonly used by a person of ordinary
skill in the art of the present application, the details are not
illustrated here.
Fifth Embodiment
[0062] FIG. 12 shows the light-emitting device 40 of the fifth
embodiment of the present application. The light-emitting device 40
in the fifth embodiment comprises a carrier 401, a light-emitting
element 402, a first light guide layer 404, a low refractive index
layer 415, and a wavelength conversion and light guide layer 410.
The carrier 401, the light-emitting element 402, the first light
guide layer 404, and the wavelength conversion and light guide
layer 410 are the same as those in the first embodiment, and are
not illustrated again. The low refractive index layer 415 in this
embodiment comprises a layer of non-gas material, for example, a
porous material layer. Specifically, the low refractive index layer
415 is a porous silicon oxide layer. The method to form the porous
silicon oxide layer is, for example, a Sol-Gel method. The method
is described in the following:
[0063] First, a precursor, a solvent, and a catalyst are prepared.
The precursor is, for example, Tetraethoxysilane (TEOS). The
solvent is, for example, Acetone. And the catalyst is, for example,
Sodium Hydroxide. The TEOS is dissolved in Acetone, and water and
Sodium Hydroxide are added and mixed to form a sol solution.
[0064] Then, stirring this sol solution until the sol solution
becomes gel. This gel is siloxane formed by the TEOS after the
hydrolysis and polymerization.
[0065] Afterwards, the siloxane gel is coated on the first light
guide layer 404 (not shown), and after curing and heat treatment, a
porous silicon oxide layer is formed on the first light guide layer
404. The porous silicon oxide layer has a low refractive index, for
example, a refractive index of 1.2.
[0066] As shown in FIG. 12, the wavelength conversion and light
guide layer 410 comprises a region which is in direct contact with
the low refractive index layer 415 formed by this porous material
layer. In this embodiment, this region is the wavelength conversion
layer 403. The same as the first embodiment, the wavelength
conversion layer 403 in this embodiment is, for example, a phosphor
layer with a refractive index of 1.8. Because of the difference
between the refractive index (1.8) of the phosphor layer and the
refractive index (1.2) of the porous silicon oxide layer, when the
light is propagated from the phosphor layer to the porous silicon
oxide layer, most of the light is totally and internally reflected
on the surface of the porous silicon oxide layer.
[0067] Although a porous silicon oxide layer is used for the porous
material in this embodiment, other porous inorganic materials may
be used in other embodiments. For example, other porous inorganic
materials may be titanium dioxide, aluminum oxide, zinc oxide,
zirconium oxide, tantalum oxide, tungsten oxide, tin oxide or
magnesium oxide, etc.
[0068] Although TEOS is used for the precursors in this embodiment,
other alkoxy monomers may be used in other embodiments. For
example, other alkoxy monomers may be tetramethoxysilane,
trimethoxymethylsilane, or dimethoxydimethylsilane.
[0069] Although sodium hydroxide is used for the catalyst in this
embodiment, other acidic catalysts may be used in other
embodiments. For example, other acidic catalysts may be
hydrochloric acid, sulfuric acid or acetic acid, etc. Or other
alkali catalysts, such as ammonia, pyridine, or potassium
hydroxide, may be used for the catalyst.
[0070] As the Sol-Gel method is commonly used by a person of
ordinary skill in the art of the present application, the details
are not illustrated here.
Sixth Embodiment
[0071] Please refer to FIG. 4. In the first embodiment, the
wavelength conversion layer 403 is a phosphor layer, and in this
embodiment, the wavelength conversion layer 403 comprises a ceramic
phosphor material. The advantage of the ceramic phosphor material
is that the light scattering phenomenon can be reduced. A phosphor
precursor is used in this embodiment to form ceramic phosphor
material. The method is described in the following:
[0072] First, two solutions are prepared for preparing the phosphor
(comprising cerium doped yttrium aluminum garnet,
Y.sub.3Al.sub.5O.sub.12:Ce, YAG:Ce) precursor. The first solution
comprises a solution formed by the mixture of the yttrium chloride
(YCl.sub.3.6H.sub.2O), aluminum chloride (AlCl.sub.3.6H.sub.2O),
and cerium chloride (CeCl.sub.3.7H.sub.2O). The second solution is
an aqueous solution containing the reducing agent
NH.sub.4HCO.sub.3. After these two solutions are mixed and placed
in the reactor at a temperature of 60.degree. C. to react, the
phosphor precursor is formed.
[0073] Please refer to FIG. 13A, the phosphor precursor 902 is then
coated on a mold 901 by the spray coating devices 903. And as shown
in FIG. 13B, after curing and sintering, the ceramic phosphor
material 904 is formed. The material for the mold 901 may be
aluminum oxide (Al.sub.2O.sub.3), zirconium dioxide (ZrO.sub.2), or
quartz.
[0074] After the ceramic phosphor material 904 is formed, the
second light guide layer 406 is formed thereon to be used for the
light-emitting device 40.
Seventh Embodiment
[0075] In this embodiment, a spray coating of a phosphor batter is
used to form the ceramic phosphor material of the wavelength
conversion layer 403.
[0076] First, the phosphor batter may be prepared by using a
phosphor powder of mono-color, such as YAG phosphor, or a
composition of phosphor powders of various colors. The size for the
phosphor powder may be a scale of from nanometers to tens of
microns.
[0077] Then, the phosphor powders, a binder, and solvent are mixed
to form the phosphor batter. The binder may be, for example,
silicone, spin on glass (SOG), or zinc oxide (ZnO). And the solvent
may be, for example, acetone or toluene. After the phosphor batter
is formed, the phosphor batter is disposed on a mold by a spray
coating approach similar to the one as illustrated in FIG. 13A.
[0078] Then, following is a molding process at high temperature.
After the mold is removed, the ceramic phosphor material is
obtained. A ceramic phosphor material for the light of mono-color
is obtained when a phosphor powder of mono-color is used. And a
ceramic phosphor material for the light of at least two colors is
obtained when phosphor powders of various colors are used and
coated on different parts of the mold. After the ceramic phosphor
material is formed, the second light guide layer 406 is formed
thereon for the light-emitting device 40.
Eighth Embodiment
[0079] FIG. 14 shows the light-emitting device 40 of the eighth
embodiment of the present application. The light-emitting device 40
in the eighth embodiment comprises a carrier 401, a light-emitting
element 402, a first light guide layer 404, a low refractive index
layer 405, and a wavelength conversion and light guide layer 440.
The carrier 401, the light-emitting element 402, the first light
guide layer 404, and the low refractive index layer 405 are the
same as those in the first embodiment, and are not illustrated
again. The difference between the eighth embodiment and the first
embodiment is the wavelength conversion and light guide layer 440.
The wavelength conversion and light guide layer 440 in this
embodiment comprises a wavelength conversion layer 433, a
transparent conductive layer 438, and a second light guide layer
436. As shown in FIG. 14, the transparent conductive layer 438 is
formed on the inner surface of the second light guide layer 436 in
this embodiment, and the wavelength conversion layer 433 is formed
on the inner surface of the transparent conductive layer 438. In
other embodiments, the wavelength conversion layer 433 is formed on
the outer surface of the transparent conductive layer 438, and the
transparent conductive layer 438 is formed on the outer surface of
the second light guide layer 436. The second light guide layer 436
is a layer of material which enhances the light extraction
efficiency. In more details, after the second light guide layer 436
is disposed on the light-emitting element 402, the light extraction
efficiency is better than that when the light-emitting element 402
is in direct contact with the air. Specifically, the second light
guide layer 436 is glass, the wavelength conversion layer 433 is a
yellow phosphor layer, and the transparent conductive layer 438 is
metal oxide such as indium tin oxide (ITO). Although in this
embodiment, the second light guide layer 436 is glass, in other
embodiments, the second light guide layer 436 and the first light
guide layer 404 may comprise other materials such as resin or other
layer of material with gradient refractive index.
[0080] The method to form the transparent conductive layer 438 is,
for example, a Sol-Gel method or a sputtering method. Taking the
Sol-Gel method as an example, first, a glass mold is provided as
the second light guide layer 436. And then a solution comprising
the powder of ITO is coated on the glass mold by a Spin-On method.
After curing and heat treatment, the transparent conductive layer
438 (ITO) is formed on the glass mold.
[0081] FIG. 15 shows the schematic diagram of the apparatus that
performs the electrophoresis method for forming the wavelength
conversion layer in abovementioned embodiments. As shown in the
figure, the apparatus comprises a reaction tank 60 such as an
electrophoresis tank, the glass mold (as the second light guide
layer 436) with the transparent conductive layer 438 formed
thereon, the reaction solution 61 such as electrophoretic
suspension, the electrode 62, and the power supply 63 which is
electrically coupled to the transparent conductive layer 438 and
the electrode 62.
[0082] Specifically, the reaction solution 61 in this embodiment is
formed by isopropyl alcohol, water, magnesium nitrate, and YAG
phosphor. Magnesium nitrate is added to provide magnesium ions
(Mg.sup.2+) to be adsorbed by the nonconductive surface of the YAG
phosphor, and make the YAG phosphor positively charged. In other
words, the reaction solution comprises the YAG phosphor particles
with charged surfaces.
[0083] As a voltage is provided by the power supply 63, an electric
field is formed between the electrode 62 and the transparent
conductive layer 438. The electric field drives the YAG phosphor
particles with charged surfaces to move toward and stack on the
surface of the transparent conductive layer 438 to form a delicate
phosphor layer. The phosphor layer formed is used as the wavelength
conversion layer 433.
[0084] Although isopropyl alcohol is used as the solvent of the
reaction solution 61 in this embodiment, other organic solvents may
be used in other embodiments. And although magnesium nitrate is
used as the electrolyte in this embodiment, other nitrates such as
aluminum nitrate and sodium nitrate, or other materials such as
metal salts, acids, and base compounds may be used in other
embodiments.
[0085] With the transparent conductive layer 438 disposed on the
wavelength conversion and light guide layer 440, the external
voltage is able to be applied to the surface of the wavelength
conversion and light guide layer 440. And accordingly, the
electrophoresis method is able to be used for the formation of the
phosphor layer.
[0086] The preferred embodiments of the light-emitting device of
the present application are illustrated as the above, but the
present application is not limited to the above embodiments. Other
alternatives and modifications may be made by a person of ordinary
skill in the art of the present application without escaping the
spirit and scope of the application, and are within the scope of
the present application.
* * * * *