U.S. patent application number 13/341668 was filed with the patent office on 2012-05-03 for method of fabricating a semiconductor device with a back electrode.
This patent application is currently assigned to Sanyo Electric Co., Ltd.. Invention is credited to Yasuyuki BESSHO, Masayuki HATA, Daijiro INOUE, Yasuhiko NOMURA, Shigeyuki OKAMOTO, Tadao TODA, Tsutomu YAMAGUCHI.
Application Number | 20120108011 13/341668 |
Document ID | / |
Family ID | 33492389 |
Filed Date | 2012-05-03 |
United States Patent
Application |
20120108011 |
Kind Code |
A1 |
HATA; Masayuki ; et
al. |
May 3, 2012 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A BACK
ELECTRODE
Abstract
A semiconductor device capable of stabilizing operations thereof
is provided. This semiconductor device comprises a substrate
provided with a region having concentrated dislocations at least on
part of the back surface thereof, a semiconductor element layer
formed on the front surface of the substrate, an insulator film
formed on the region of the back surface of the substrate having
concentrated dislocations and a back electrode formed to be in
contact with a region of the back surface of the substrate other
than the region having concentrated dislocations.
Inventors: |
HATA; Masayuki; (Osaka,
JP) ; TODA; Tadao; (Souraku-gun, JP) ;
OKAMOTO; Shigeyuki; (Kobe-shi, JP) ; INOUE;
Daijiro; (Kyoto-shi, JP) ; BESSHO; Yasuyuki;
(Osaka, JP) ; NOMURA; Yasuhiko; (Osaka, JP)
; YAMAGUCHI; Tsutomu; (Nara-shi, JP) |
Assignee: |
Sanyo Electric Co., Ltd.
Osaka
JP
|
Family ID: |
33492389 |
Appl. No.: |
13/341668 |
Filed: |
December 30, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11723449 |
Mar 20, 2007 |
8101465 |
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13341668 |
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10766031 |
Jan 29, 2004 |
7372077 |
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11723449 |
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Current U.S.
Class: |
438/113 ;
257/E21.599 |
Current CPC
Class: |
H01S 5/3063 20130101;
H01L 33/0093 20200501; H01S 5/34333 20130101; H01S 5/2214 20130101;
H01L 21/02639 20130101; H01L 33/0075 20130101; H01S 5/22 20130101;
H01L 21/02576 20130101; H01S 2304/04 20130101; B82Y 20/00 20130101;
H01L 21/02647 20130101; H01S 5/2201 20130101; H01S 5/3211 20130101;
H01S 5/02345 20210101; H01S 5/0422 20130101; H01L 2224/48091
20130101; H01L 33/007 20130101; H01S 5/0683 20130101; H01S 5/2009
20130101; H01L 21/0254 20130101; H01S 5/02212 20130101; H01L
21/0262 20130101; H01L 21/02458 20130101; H01S 5/04252 20190801;
H01S 5/04253 20190801; H01S 5/305 20130101; H01L 21/02579 20130101;
H01L 21/02389 20130101; H01S 2304/12 20130101; H01S 5/0202
20130101; H01S 5/04257 20190801; H01L 2224/48091 20130101; H01L
2924/00014 20130101 |
Class at
Publication: |
438/113 ;
257/E21.599 |
International
Class: |
H01L 21/78 20060101
H01L021/78 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 7, 2003 |
JP |
2003-31416 |
Sep 30, 2003 |
JP |
2003-339421 |
Claims
1-29. (canceled)
30. A method of fabricating a semiconductor device with a back
electrode, the method comprising the steps of: forming a
semiconductor element layer on a first surface of a substrate, said
substrate having a second surface comprising plurality of
dislocation regions; forming a pair of scribing lines on said first
surface of said substrate, said scribe lines formed such that a
first said dislocation region is between said scribing lines; and
separating said semiconductor element layer and said substrate
along said scribing lines, thereby removing a portion of said
substrate including said first dislocation region.
31. A method of fabricating a semiconductor device according to
claim 30, wherein said portion has a substantially identical width
of said second surface and said first surface of said semiconductor
element layer.
32. A method of fabricating a semiconductor device according to
claim 30, wherein said substrate includes a nitride-based
semiconductor substrate.
33. A method of fabricating a semiconductor device according to
claim 30, wherein said step of separating said substrate and said
semiconductor element layer includes a step of cleaving said
substrate and said semiconductor element layer.
34. A method of fabricating a semiconductor device according to
claim 30, wherein said scribing lines are formed on a side of a
front surface of said semiconductor element layer.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device and
a method of fabricating the same, and more particularly, it relates
to a semiconductor device having a semiconductor element layer
formed on a substrate and a method of fabricating the same.
[0003] 2. Description of the Background Art
[0004] In general, a light-emitting diode device or a semiconductor
laser device is known as a semiconductor device having a
semiconductor element layer formed on a substrate. Such a
semiconductor device is disclosed in Japanese Patent Laying-Open
No. 11-214798 (1999), for example.
[0005] The aforementioned Japanese Patent Laying-Open No. 11-214798
discloses a nitride-based semiconductor laser device having a
plurality of nitride-based semiconductor layers formed on a
nitride-based semiconductor substrate. More specifically, an n-type
nitride-based semiconductor layer, an emission layer consisting of
a nitride-based semiconductor and a p-type nitride-based
semiconductor layer are successively formed on an n-type GaN
substrate in the nitride-based semiconductor laser device disclosed
in the aforementioned Japanese Patent Laying-Open No. 11-214798. A
ridge portion serving as a current path portion is formed on the
p-type nitride-based semiconductor layer, while a p-side electrode
is formed on the ridge portion. An n-side electrode is formed on
the back surface of the n-type GaN substrate.
[0006] When dislocations are present on the back surface of the
substrate in the aforementioned semiconductor device having an
electrode on the back surface of the substrate, current flows to
regions of the back surface of the substrate having the
dislocations, to result in development of leakage current. In the
aforementioned Japanese Patent Laying-Open No. 11-214798,
therefore, the n-type GaN substrate is prepared by lateral growth
thereby reducing the number of dislocations present in the n-type
GaN substrate. More specifically, a mask layer is formed on a
prescribed portion of a sapphire substrate, and an n-type GaN layer
is thereafter laterally grown on the sapphire substrate through the
mask layer serving as a selective growth mask. At this time, the
n-type GaN layer is selectively longitudinally grown on portions of
the sapphire substrate formed with no mask layer, and thereafter
gradually grown in the lateral direction. The n-type GaN layer is
laterally grown to laterally bend dislocations, thereby inhibiting
the dislocations from longitudinal propagation. Thus, the n-type
GaN layer is so formed as to reduce the number of dislocations
reaching the upper surface thereof. Thereafter regions (the
sapphire substrate etc.) including the mask layer located under the
n-type GaN layer are removed thereby forming an n-type GaN
substrate having a reduced number of dislocations.
[0007] In the method of the aforementioned literature, however,
regions having concentrated dislocations are disadvantageously
formed on the portions, allowing longitudinal growth of the n-type
GaN layer, formed with no mask layer. If the n-side electrode is
formed on regions of the back surface of the n-type GaN substrate
having concentrated dislocations when the n-type GaN substrate is
prepared from the n-type GaN layer including the regions having
concentrated dislocations, current flows to the regions of the back
surface of the n-type GaN substrate having concentrated
dislocations to disadvantageously result in development of leakage
current. In this case, optical output is unstabilized when the
device is subjected to constant current driving, and hence it is
disadvantageously difficult to stabilize operations of the
device.
SUMMARY OF THE INVENTION
[0008] The present invention has been proposed in order to solve
the aforementioned problem, and an object thereof is to provide a
semiconductor device capable of stabilizing operations thereof.
[0009] Another object of the present invention is to provide a
method of fabricating a semiconductor device capable of stabilizing
operations thereof.
[0010] In order to attain the aforementioned objects, a
semiconductor device according to a first aspect of the present
invention comprises a substrate provided with a region of the back
surface having concentrated dislocations at least on part of the
back surface thereof, a semiconductor element layer formed on the
front surface of the substrate, an insulator film formed on the
region of the back surface having the concentrated dislocations and
a back electrode formed to be in contact with a region of the back
surface of the substrate other than the region of the back surface
having the concentrated dislocations.
[0011] In the semiconductor device according to the first aspect,
as hereinabove described, the insulator film is formed on the
region of the back surface of the substrate having concentrated
dislocations while the back electrode is formed to be in contact
with the region of the back surface of the substrate other than the
region having concentrated dislocations so that the insulator film
covers the region of the back surface of the substrate having
concentrated dislocations not to expose the same, whereby it is
possible to easily suppress development of leakage current
resulting from current flowing to the region of the back surface of
the substrate having concentrated dislocations. Consequently,
optical output can be easily stabilized when the device is
subjected to constant current driving, whereby operations of the
semiconductor device can be easily stabilized. Further, the
quantity of current flowing to the region having concentrated
dislocations can be so reduced that it is possible to reduce
unnecessary emission from the region having concentrated
dislocations.
[0012] In the aforementioned semiconductor device according to the
first aspect, the semiconductor element layer is preferably
provided with a region of the front surface having the concentrated
dislocations at least on part of the front surface thereof, and the
semiconductor device preferably further comprises a front electrode
formed to be in contact with a region of the front surface of the
semiconductor element layer other than the region of the front
surface having the concentrated dislocations. According to this
structure, it is possible to suppress development of leakage
current resulting from current flowing to the region of the front
surface of the semiconductor element layer having concentrated
dislocations. Consequently, optical output can be stabilized when
the device is subjected to constant current driving, whereby
operations of the semiconductor device can be stabilized also when
the semiconductor element layer is provided with the region having
concentrated dislocations on the front surface thereof. Further,
the quantity of current flowing to the region having concentrated
dislocations can be so reduced that it is possible to reduce
unnecessary emission from the region having concentrated
dislocations.
[0013] In the semiconductor device according to the first aspect,
the substrate may include a nitride-based semiconductor substrate.
According to this structure, the nitride-based semiconductor
substrate can be inhibited from development of leakage current.
[0014] A semiconductor device according to a second aspect of the
present invention comprises a semiconductor element layer formed on
the front surface of a substrate and provided with a region of the
front surface having concentrated dislocations at least on part of
the front surface thereof, an insulator film formed on the region
of the front surface having the concentrated dislocations and a
front electrode formed to be in contact with a region of the front
surface of the semiconductor element layer other than the region of
the front surface having the concentrated dislocations.
[0015] In the semiconductor device according to the second aspect,
as hereinabove described, the insulator film is formed on the
region of the front surface of the semiconductor element layer
having concentrated dislocations while the front electrode is
formed to be in contact with the region of the front surface of the
semiconductor element layer other than the region having
concentrated dislocations so that the insulator film covers the
region of the front surface of the semiconductor element layer
having concentrated dislocations not to expose the same, whereby it
is possible to easily suppress development of leakage current
resulting from current flowing to the region of the front surface
of the semiconductor element layer having concentrated
dislocations. Consequently, optical output can be easily stabilized
when the device is subjected to constant current driving, whereby
operations of the semiconductor device can be easily stabilized.
Further, the quantity of current flowing to the region having
concentrated dislocations can be so reduced that it is possible to
reduce unnecessary emission from the region having concentrated
dislocations.
[0016] In the aforementioned semiconductor device according to the
second aspect, the substrate is preferably provided with a region
of the back surface having the concentrated dislocations on at
least part of the back surface thereof, and the semiconductor
device preferably further comprises a back electrode formed to be
in contact with a region of the back surface of the substrate other
than the region of the back surface having the concentrated
dislocations. According to this structure, it is possible to
suppress development of leakage current resulting from current
flowing to the region of the back surface of the substrate having
concentrated dislocations. Consequently, optical output can be
stabilized when the device is subjected to constant current
driving, whereby operations of the semiconductor device can be
stabilized also when the substrate is provided with the region
having concentrated dislocations on the back surface thereof.
Further, the quantity of current flowing to the region having
concentrated dislocations can be so reduced that it is possible to
reduce unnecessary emission from the region having concentrated
dislocations.
[0017] In this case, the substrate may include a nitride-based
semiconductor substrate. According to this structure, the
nitride-based semiconductor substrate can be inhibited from
development of leakage current.
[0018] In this case, the side of the back electrode is preferably
provided on a position inwardly separated from the side of the
substrate by a prescribed interval. According to this structure,
solder can be inhibited from flowing toward the side of the
semiconductor element layer formed on the substrate when the solder
is welded to the back electrode, for example. Thus, the
semiconductor device can be inhibited from a defective short.
[0019] In this case, the semiconductor device preferably further
comprises an insulator film formed on the region of the back
surface having the concentrated dislocations. According to this
structure, the insulator film covers the region of the back surface
of the substrate having concentrated dislocations not to expose the
same, whereby it is possible to easily suppress development of
leakage current resulting from current flowing to the region of the
back surface of the substrate having concentrated dislocations.
[0020] A semiconductor device according to a third aspect of the
present invention comprises a semiconductor element layer formed on
the front surface of a substrate and provided with a region of the
front surface having concentrated dislocations at least on part of
the front surface thereof, a recess portion formed on a region of
the front surface of the semiconductor element layer located inward
beyond the region of the front surface having the concentrated
dislocations and a front electrode formed to be in contact with a
region of the front surface of the semiconductor element layer
other than the region of the front surface having the concentrated
dislocations.
[0021] In the semiconductor device according to the third
embodiment, as hereinabove described, the recess portion is formed
on the region of the front surface of the semiconductor element
layer located inward beyond the region having concentrated
dislocations while the front electrode is formed to be in contact
with the region of the front surface of the semiconductor element
layer other than the region having concentrated dislocations,
whereby it is possible to suppress development of leakage current
resulting from current flowing to the region of the front surface
of the semiconductor element layer having concentrated
dislocations. Consequently, optical output can be stabilized when
the device is subjected to constant current driving, whereby
operations of the semiconductor device can be stabilized. When the
semiconductor device is applied to a light-emitting device, for
example, the recess portion parts the region of the front surface
of the semiconductor element layer located inward beyond the region
having concentrated dislocations and the region of the front
surface of the semiconductor element layer having concentrated
dislocations from each other, whereby the region of the front
surface of the semiconductor element layer having concentrated
dislocations can be inhibited from absorbing light emitted from the
region of the front surface of the semiconductor element layer
located inward beyond the region having concentrated dislocations.
Thus, light absorbed by the region having concentrated dislocations
can be inhibited from reemission at an unintended wavelength,
whereby deterioration of color purity resulting from such
reemission can be suppressed.
[0022] In the aforementioned semiconductor device according to the
third aspect, the substrate is preferably provided with a region of
the back surface having the concentrated dislocations at least on
part of the back surface thereof, and the semiconductor device
preferably further comprises a back electrode formed to be in
contact with a region of the back surface of the substrate other
than the region of the back surface having the concentrated
dislocations. According to this structure, it is possible to
suppress development of leakage current resulting from current
flowing to the region of the back surface of the substrate having
concentrated dislocations. Consequently, optical output can be
stabilized when the device is subjected to constant current
driving, whereby operations of the semiconductor device can be
stabilized also when the substrate is provided with the region
having concentrated dislocations the back surface thereof. Further,
the quantity of current flowing to the region having concentrated
dislocations can be so reduced that it is possible to reduce
unnecessary emission from the region having concentrated
dislocations.
[0023] In this case, the semiconductor device preferably further
comprises an insulator film formed on the region of the back
surface having the concentrated dislocations. According to this
structure, the insulator film covers the region of the back surface
of the substrate having concentrated dislocations not to expose the
same, whereby it is possible to easily suppress development of
leakage current resulting from current flowing to the region of the
back surface of the substrate having concentrated dislocations.
[0024] In this case, the substrate may include a nitride-based
semiconductor substrate. According to this structure, the
nitride-based semiconductor substrate can be inhibited from
development of leakage current.
[0025] A semiconductor device according to a fourth aspect of the
present invention comprises a semiconductor element layer formed on
the front surface of a substrate and provided with a region of the
front surface having concentrated dislocations at least on part of
the front surface thereof, a high resistance region formed in the
region of the front surface having the concentrated dislocations
and a front electrode formed to be in contact with a region of the
front surface of the semiconductor element layer other than the
region of the front surface having the concentrated
dislocations.
[0026] In the semiconductor device according to the fourth aspect,
as hereinabove described, the high resistance region is formed in
the region of the front surface of the semiconductor element layer
having concentrated regions while the front electrode is formed to
be in contact with the region of the front surface of the
semiconductor element layer other than the region having
concentrated dislocations so that current hardly flows to the
region of the front surface of the semiconductor element layer
having concentrated dislocations due to formation of the high
resistance region, whereby it is possible to suppress development
of leakage current resulting from current flowing to the region of
the front surface of the semiconductor element layer having
concentrated dislocations. Consequently, optical output can be
easily stabilized when the device is subjected to constant current
driving, whereby operations of the semiconductor device can be
easily stabilized. Further, the quantity of current flowing to the
region having concentrated dislocations can be so reduced that it
is possible to reduce unnecessary emission from the region having
concentrated dislocations.
[0027] In the aforementioned semiconductor device according to the
fourth aspect, the high resistance region preferably includes an
impurity introduction layer formed by introducing the impurity.
According to this structure, the high resistance region can be
easily formed on the region of the front surface of the
semiconductor element layer having concentrated dislocations.
[0028] In the aforementioned semiconductor device according to the
fourth aspect, the substrate is preferably provided with a region
of the back surface having the concentrated dislocations at least
on part of the back surface thereof, and the semiconductor device
preferably further comprises a back electrode formed to be in
contact with a region of the back surface of the substrate other
than the region of the back surface having the concentrated
dislocations. According to this structure, it is possible to
suppress development of leakage current resulting from current
flowing to the region of the back surface of the substrate having
concentrated dislocations. Consequently, optical output can be
stabilized when the device is subjected to constant current
driving, whereby operations of the semiconductor device can be
stabilized also when the substrate is provided with the region
having concentrated dislocations on the back surface thereof.
Further, the quantity of current flowing to the region having
concentrated dislocations can be so reduced that it is possible to
reduce unnecessary emission from the region having concentrated
dislocations.
[0029] In this case, the semiconductor device preferably further
comprises an insulator film formed on the region of the back
surface having the concentrated dislocations. According to this
structure, the insulator film covers the region of the back surface
of the substrate having concentrated dislocations not to expose the
same, whereby it is possible to easily suppress development of
leakage current resulting from current flowing to the region of the
back surface of the substrate having concentrated dislocations.
[0030] In the aforementioned semiconductor device according to the
fourth aspect, the substrate may include a nitride-based
semiconductor substrate. According to this structure, the
nitride-based semiconductor substrate can be inhibited from
development of leakage current.
[0031] A semiconductor device according to a fifth aspect of the
present invention comprises a semiconductor element layer formed on
the front surface of a substrate and provided with a region of the
front surface having concentrated dislocations at least on part of
the front surface thereof while including an active layer and a
front electrode formed to be in contact with a region of the front
surface of the semiconductor element layer other than the region of
the front surface having the concentrated dislocations, and the
upper surface of the region of the front surface having the
concentrated dislocations is partially removed by a prescribed
thickness and located downward beyond the active layer.
[0032] In the semiconductor device according to the fifth aspect,
as hereinabove described, the upper surface of the region of the
front surface of the semiconductor element layer having
concentrated dislocations is partially removed by the prescribed
thickness so that the upper surface of the region of the front
surface of the semiconductor element layer having concentrated
dislocations is located downward beyond the active layer, whereby
part of the region having concentrated dislocations formed through
a p-n junction region is removed when the p-n junction region is
formed to hold the active layer so that it is possible to suppress
development of leakage current resulting from current flowing to
the region having concentrated dislocations. Consequently, optical
output can be easily stabilized when the device is subjected to
constant current driving, whereby operations of the semiconductor
device can be easily stabilized. Further, the quantity of current
flowing to the region having concentrated dislocations can be so
reduced that it is possible to reduce unnecessary emission from the
region having concentrated dislocations.
[0033] In the aforementioned semiconductor device according to the
fifth aspect, the active layer is preferably formed in a region of
the front surface of the semiconductor element layer other than the
region of the front surface having the concentrated dislocations.
According to this structure, it is possible to easily suppress
development of leakage current resulting from formation of the
region having concentrated dislocations through a p-n junction
region when the p-n junction region is formed to hold the active
layer.
[0034] In this case, the semiconductor element layer preferably
includes a first conductivity type first semiconductor layer formed
under the active layer, the first semiconductor layer preferably
includes a first region having a first thickness located inward
beyond the region of the front surface having the concentrated
dislocations and a second region, including the region of the front
surface having the concentrated dislocations, having a second
thickness smaller than the first thickness, and the active layer
preferably has a width smaller than the width of the first region
of the first semiconductor layer. According to this structure, a
p-n junction region is smaller than the first region of the first
semiconductor layer when the p-n junction region is formed to hold
the active layer, whereby a p-n junction capacitance can be
reduced. Thus, the speed of response of the semiconductor device
can be increased.
[0035] A semiconductor device according to a sixth aspect of the
present invention comprises a substrate including a first region
having a first thickness and a second region provided with a region
of the front surface having concentrated dislocations at least on
part of the front surface thereof while having a second thickness
smaller than the first thickness, a semiconductor element layer
formed on the first region of the front surface of the substrate
other than the second region provided with the region of the front
surface having the concentrated dislocations and a front electrode
formed to be in contact with the front surface of the semiconductor
element layer.
[0036] In the semiconductor device according to the sixth aspect,
as hereinabove described, the semiconductor element layer is formed
on the first region of the front surface of the substrate other
than the second region provided with the region having concentrated
dislocations while the front electrode is formed to be in contact
with the front surface of the semiconductor element layer so that
the semiconductor element layer is formed with no region having
concentrated dislocations, whereby it is possible to suppress
development of leakage current resulting from current flowing to
the region having concentrated dislocations. Consequently, optical
output can be easily stabilized when the device is subjected to
constant current driving, whereby operations of the semiconductor
device can be easily stabilized. Further, the quantity of current
flowing to the region having concentrated dislocations can be so
reduced that it is possible to reduce unnecessary emission from the
region having concentrated dislocations.
[0037] In the aforementioned semiconductor device according to the
sixth aspect, the semiconductor element layer preferably includes a
first conductivity type first semiconductor layer, an active layer
formed on the first semiconductor layer and a second conductivity
type second semiconductor layer formed on the active layer.
According to this structure, a p-n junction region between the
first and second semiconductor layers formed through the active
layer is formed with no region having concentrated dislocations,
whereby it is possible to easily suppress development of leakage
current resulting from current flowing to the region having
concentrated dislocations.
[0038] In this case, the active layer preferably has a width
smaller than the width of the first semiconductor layer. According
to this structure, the p-n junction region between the first and
second semiconductor layers formed through the active layer is so
reduced that the p-n junction capacitance formed by the first and
second semiconductor layers can be reduced. Thus, the speed of
response of the semiconductor device can be increased.
[0039] A semiconductor device according to a seventh aspect of the
present invention comprises a substrate provided with a region of
the front surface having concentrated dislocations at least on part
of the front surface thereof, a first selective growth mask formed
on a region of the front surface of the substrate located inward
beyond the region of the front surface having the concentrated
dislocations with a width smaller than the width of the region of
the front surface having the concentrated dislocations, a
semiconductor element layer formed on a region of the front surface
of the substrate other than a region formed with the first
selective growth mask and a front electrode formed to be in contact
with a portion of the front surface of the semiconductor element
layer located inside the first selective growth mask.
[0040] In the semiconductor device according to the seventh aspect,
as hereinabove described, the first selective growth mask having
the width smaller than the width of the region having concentrated
dislocations is formed on the region located inward beyond the
region of the front surface of the substrate having concentrated
dislocations so that no semiconductor element layer is grown on the
first selective growth mask when the semiconductor element layer is
grown on the front surface of the substrate, whereby a recess
portion is formed between a portion of the semiconductor element
layer formed on the region of the front surface of the substrate
inside the region having concentrated dislocations and another
portion of the semiconductor element layer formed on the region of
the front surface of the substrate having concentrated
dislocations. Therefore, the recess portion can part the portion of
the semiconductor element layer formed on the region of the front
surface of the substrate inside the region having concentrated
dislocations and the portion of the semiconductor element layer
formed on the region of the front surface of the substrate having
concentrated dislocations from each other. In this case, it is
possible to suppress development of leakage current resulting from
current flowing to the region of the front surface of the
semiconductor element layer having concentrated dislocations by
forming the front electrode to be in contact with the portion of
the front surface of the semiconductor element layer located inside
the first selective growth mask. Consequently, optical output can
be stabilized when the device is subjected to constant current
driving, whereby operations of the semiconductor device can be
stabilized. When the semiconductor device is applied to a
light-emitting device, for example, the recess portion parts the
region of the front surface of the semiconductor element layer
located inward beyond the region having concentrated dislocations
and the region of the front surface of the semiconductor element
layer having concentrated dislocations from each other, whereby the
region of the front surface of the semiconductor element layer
having concentrated dislocations can be inhibited from absorbing
light emitted from the region of the front surface of the
semiconductor layer located inward beyond the region having
concentrated dislocations. Thus, light absorbed by the region
having concentrated dislocations can be inhibited from reemission
at an unintended wavelength, whereby deterioration of color purity
resulting from such reemission can be suppressed. According to the
seventh aspect, further, the width of the first selective growth
mask is so reduced as to reduce the total quantity of source gas
reaching the overall surface of the first selective growth mask,
thereby reducing the quantity of the source gas or decomposites
thereof diffusing from the surface of the first selective growth
mask into the front surface under the growth of the semiconductor
element layer located in the vicinity of the first selective growth
mask. Thus, amount of increase of the quantity of the source gas or
the decomposites thereof supplied to the front surface under the
growth of the semiconductor element layer located in the vicinity
of the first selective growth mask can be reduced, whereby the
thickness of the semiconductor element layer located in the
vicinity of the first selective growth mask can be inhibited from
increase. Consequently, the thickness of the semiconductor element
layer can be inhibited from inequality between a position close to
the first selective growth mask and a position separated from the
first selective growth mask.
[0041] The aforementioned semiconductor device according to the
seventh aspect preferably further comprises a second selective
growth mask formed on a region located outward beyond the first
selective growth mask at a prescribed interval from the first
selective growth mask. According to this structure, no
semiconductor element layer is grown on the second selective growth
mask when the semiconductor element layer is grown on the region of
the front surface of the substrate having concentrated
dislocations, for example, whereby the semiconductor element layer
can be inhibited from formation of dislocations.
[0042] In this case, the second selective growth mask is preferably
formed on the region of the front surface having the concentrated
dislocations. According to this structure, the semiconductor
element layer can be easily inhibited from formation of
dislocations.
[0043] A method of fabricating a semiconductor device according to
an eighth aspect of the present invention comprises steps of
forming a semiconductor element layer on the front surface of a
substrate provided with a region of the back surface having
concentrated dislocations at least on part of the back surface
thereof, forming a back electrode to be in contact with the back
surface of the substrate and removing the region of the back
surface having the concentrated dislocations after forming the
semiconductor element layer and the back electrode.
[0044] In the method of fabricating a semiconductor device
according to the eighth aspect, as hereinabove described, the
region having concentrated dislocations is removed after formation
of the semiconductor element layer and the back electrode so that
it is possible to easily suppress development of leakage current
resulting from current flowing to the region of the back surface of
the substrate having concentrated dislocations. Consequently,
optical output can be easily stabilized when the device is
subjected to constant current driving, whereby a stably operating
semiconductor device can be easily fabricated. When the
semiconductor device is applied to a light-emitting device, for
example, it is possible to easily inhibit the region of the back
surface of the substrate having concentrated dislocations from
absorbing light emitted from the semiconductor element layer. Thus,
light absorbed by the region having concentrated dislocations can
be easily inhibited from reemission at an unintended wavelength,
whereby deterioration of color purity resulting from such
reemission can be suppressed.
[0045] In the aforementioned method of fabricating a semiconductor
device according to the eighth aspect, the step of removing the
region of the back surface having the concentrated dislocations
preferably includes a step of removing a portion between the back
surface of the substrate and the front surface of the semiconductor
element layer with a substantially identical width. According to
this structure, threading dislocations extending from the back
surface of the substrate to the front surface of the semiconductor
element layer can be easily removed.
[0046] In the aforementioned method of fabricating a semiconductor
device according to the eighth aspect, the substrate may include a
nitride-based semiconductor substrate. According to this structure,
a nitride-based semiconductor device capable of inhibiting a
nitride-based semiconductor substrate from development of leakage
current can be easily formed.
[0047] The foregoing and other objects, features, aspects and
advantages of the present invention will become more apparent from
the following detailed description of the present invention when
taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0048] FIG. 1 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a first embodiment of the present invention;
[0049] FIG. 2 is an enlarged sectional view detailedly showing an
emission layer of the nitride-based semiconductor laser device
according to the first embodiment shown in FIG. 1;
[0050] FIGS. 3 to 12 are sectional views for illustrating
fabrication processes for the nitride-based semiconductor laser
device according to the first embodiment shown in FIG. 1;
[0051] FIG. 13 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a second embodiment of the present invention;
[0052] FIGS. 14 and 15 are sectional views for illustrating
fabrication processes for the nitride-based semiconductor laser
device according to the second embodiment shown in FIG. 13;
[0053] FIG. 16 is a sectional view showing the structure of a
light-emitting diode device (semiconductor device) according to a
third embodiment of the present invention;
[0054] FIGS. 17 to 21 are sectional view for illustrating
fabrication processes for the light-emitting diode device according
to the third embodiment shown in FIG. 16;
[0055] FIG. 22 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a fourth embodiment of the present invention;
[0056] FIGS. 23 to 26 are sectional views for illustrating
fabrication processes for the nitride-based semiconductor laser
device according to the fourth embodiment shown in FIG. 22;
[0057] FIG. 27 is a sectional view showing the structure of a
light-emitting diode device (semiconductor device) according to a
fifth embodiment of the present invention;
[0058] FIG. 28 is a sectional view for illustrating a fabrication
process for the light-emitting diode device according to the fifth
embodiment shown in FIG. 27;
[0059] FIG. 29 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a sixth embodiment of the present invention;
[0060] FIG. 30 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a seventh embodiment of the present invention;
[0061] FIG. 31 is a sectional view showing the structure of a
nitride-based semiconductor laser device according to a first
modification of the seventh embodiment shown in FIG. 30;
[0062] FIG. 32 is a sectional view showing the structure of a
nitride-based semiconductor laser device according to a second
modification of the seventh embodiment shown in FIG. 30;
[0063] FIG. 33 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to an eighth embodiment of the present invention;
[0064] FIG. 34 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a ninth embodiment of the present invention;
[0065] FIGS. 35 to 38 are sectional views for illustrating
fabrication processes for the nitride-based semiconductor laser
device according to the ninth embodiment shown in FIG. 34;
[0066] FIG. 39 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a tenth embodiment of the present invention;
[0067] FIGS. 40 to 45 are sectional views for illustrating
fabrication processes for the nitride-based semiconductor laser
device according to the tenth embodiment shown in FIG. 39;
[0068] FIG. 46 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to an eleventh embodiment of the present invention;
[0069] FIGS. 47 and 48 are sectional views for illustrating
fabrication processes for the nitride-based semiconductor laser
device according to the eleventh embodiment shown in FIG. 46;
[0070] FIG. 49 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a twelfth embodiment of the present invention;
[0071] FIG. 50 is a sectional view for illustrating a fabrication
process for the nitride-based semiconductor laser device according
to the twelfth embodiment shown in FIG. 49;
[0072] FIG. 51 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a thirteenth embodiment of the present invention;
[0073] FIGS. 52 to 55 are plan views and sectional views for
illustrating fabrication processes for the nitride-based
semiconductor laser device according to the thirteenth embodiment
shown in FIG. 51;
[0074] FIG. 56 is a sectional view showing the structure of a
nitride-based semiconductor laser device (semiconductor device)
according to a fourteenth embodiment of the present invention;
[0075] FIGS. 57 to 60 are plan views and sectional views for
illustrating fabrication processes for the nitride-based
semiconductor laser device according to the fourteenth embodiment
shown in FIG. 56;
[0076] FIG. 61 is a plan view for illustrating a fabrication
process for a nitride-based semiconductor laser device according to
a modification of the fourteenth embodiment;
[0077] FIG. 62 is a plan view showing the structure of a
nitride-based semiconductor laser device according to a fifteenth
embodiment of the present invention;
[0078] FIG. 63 is a sectional view taken along the line 500-500 in
FIG. 62;
[0079] FIG. 64 is a sectional view detailedly showing an emission
layer of the nitride-based semiconductor laser device according to
the fifteenth embodiment shown in FIGS. 62 and 63; and
[0080] FIG. 65 is a perspective view showing the structure of a
semiconductor laser employing the nitride-based semiconductor laser
device according to the fifteenth embodiment shown in FIGS. 62 and
63.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0081] Embodiments of the present invention are now described with
reference to the drawings.
First Embodiment
[0082] The structure of a nitride-based semiconductor laser device
according to a first embodiment of the present invention is
described with reference to FIGS. 1 and 2.
[0083] In the nitride-based semiconductor laser device according to
the first embodiment, an n-type layer 2 having a thickness of about
100 nm and consisting of n-type GaN doped with Si having an atomic
density of about 5.times.10.sup.18 cm.sup.-3 is formed on the
(0001) plane of an n-type GaN substrate 1 of a wurtzite structure
having a thickness of about 100 .mu.m and doped with oxygen having
a carrier concentration of about 5.times.10.sup.18 cm.sup.-3, as
shown in FIG. 1. An n-type cladding layer 3 having a thickness of
about 400 nm and consisting of n-type Al.sub.0.05Ga.sub.0.95N doped
with Si having an atomic density of about 5.times.10.sup.18
cm.sup.-3 and a carrier concentration of about 5.times.10.sup.18
cm.sup.-3 is formed on the n-type layer 2. The n-type GaN substrate
1 is an example of the "substrate" or the "nitride-based
semiconductor substrate" in the present invention, and the n-type
layer 2 and the n-type cladding layer 3 are examples of the
"semiconductor element layer" in the present invention.
[0084] An emission layer 4 is formed on the n-type cladding layer
3. As shown in FIG. 2, this emission layer 4 is constituted of an
n-type carrier blocking layer 4a, an n-type light guide layer 4b, a
multiple quantum well (MQW) active layer 4e, a p-type light guide
layer 4f and a p-type cap layer 4g. The n-type carrier blocking
layer 4a has a thickness of about 5 nm, and consists of n-type
Al.sub.0.1Ga.sub.0.9N doped with Si having an atomic density of
about 5.times.10.sup.18 cm.sup.-3 and a carrier concentration of
about 5.times.10.sup.18 cm.sup.-3. The n-type light guide layer 4b
has a thickness of about 100 nm, and consists of n-type GaN doped
with Si having an atomic density of about 5.times.10.sup.18
cm.sup.-3 and a carrier concentration of about 5.times.10.sup.18
cm.sup.-3. The MQW active layer 4e is formed by alternately
stacking four barrier layers 4c of undoped In.sub.0.05Ga.sub.0.95N
each having a thickness of about 20 nm and three well layers 4d of
undoped In.sub.0.15Ga.sub.0.85N each having a thickness of about 3
nm. The p-type light guide layer 4f has a thickness of about 100
nm, and consists of p-type GaN doped with Mg having an atomic
density of about 4.times.10.sup.19 cm.sup.-3 and a carrier
concentration of about 5.times.10.sup.17 cm.sup.-3. The p-type cap
layer 4g has a thickness of about 20 nm, and consists of p-type
Al.sub.0.1Ga.sub.0.9N doped with Mg having an atomic density of
about 4.times.10.sup.19 cm.sup.-3 and a carrier concentration of
about 5.times.10.sup.17 cm.sup.-3. The emission layer 4 is an
example of the "semiconductor element layer" in the present
invention.
[0085] As shown in FIG. 1, a p-type cladding layer 5 having a
projecting portion and consisting of p-type Al.sub.0.05Ga.sub.0.95N
doped with Mg having an atomic density of about 4.times.10.sup.19
cm.sup.-3 and a carrier concentration of about 5.times.10.sup.17
cm.sup.-3 is formed on the emission layer 4. The projecting portion
of this p-type cladding layer 5 has a width of about 1.5 .mu.m and
a height of about 300 nm. Flat portions of the p-type cladding
layer 5 other than the projecting portion have a thickness of about
100 nm. A p-type contact layer 6 having a thickness of about 10 nm
and consisting of p-type GaN doped with Mg having an atomic density
of about 4.times.10.sup.19 cm.sup.-3 and a carrier concentration of
about 5.times.10.sup.17 cm.sup.-3 is formed on the projecting
portion of the p-type cladding layer 5. The projecting portion of
the p-type cladding layer 5 and the p-type contact layer 6
constitute a striped (elongated) ridge portion 7 extending in a
prescribed direction. The p-type cladding layer 5 and the p-type
contact layer 6 are examples of the "semiconductor element layer"
in the present invention.
[0086] A p-side ohmic electrode 9 consisting of a Pt layer having a
thickness of about 5 nm, a Pd layer having a thickness of about 100
nm and an Au layer having a thickness of about 150 nm in ascending
order is formed on the p-type contact layer 6 constituting the
ridge portion 7. The p-side ohmic electrode 9 is an example of the
"front electrode" in the present invention. Insulator films 10 of
SiN having a thickness of about 250 nm are formed on the front
surfaces of the flat portions of the p-type cladding layer 5 other
than the projecting portion to cover the side surfaces of the ridge
portion 7 and the p-side ohmic electrode 9. A p-side pad electrode
11 consisting of a Ti layer having a thickness of about 100 nm, a
Pd layer having a thickness of about 100 nm and an Au layer having
a thickness of about 3 .mu.m in ascending order is formed on the
front surfaces of the insulator films 10 to be in contact with the
upper surface of the p-side ohmic electrode 9.
[0087] In the vicinity of ends of the n-type GaN substrate 1 and
the nitride-based semiconductor layers 2 to 5, regions 8 of about
10 .mu.m in width having concentrated dislocations, extending from
the back surface of the n-type GaN substrate 1 to the front
surfaces of the flat portions of the p-type cladding layer 5, are
formed with a period of about 400 .mu.m in a striped (elongated)
shape. According to the first embodiment, insulator films 12 of
SiO.sub.2 having a thickness of about 250 nm and a width of about
40 .mu.m are formed to cover the regions 8 having concentrated
dislocations on the back surface of the n-type GaN substrate 1. An
n-side electrode 13 is formed on the back surface of the n-type GaN
substrate 1 to be in contact with a region of the back surface of
the n-type GaN substrate 1 other than the regions 8 having
concentrated dislocations while covering the insulator films 12.
This n-side electrode 13 consists of an Al layer having a thickness
of about 10 nm, a Pt layer having a thickness of about 20 nm and an
Au layer having a thickness of about 300 nm successively from the
side closer to the back surface of the n-type GaN substrate 1. The
n-side electrode 13 is an example of the "back electrode" in the
present invention.
[0088] According to the first embodiment, as hereinabove described,
the insulator films 12 are formed on the regions 8 having
concentrated dislocations on the back surface of the n-type GaN
substrate 1 and the n-side electrode 13 is formed to be in contact
with the region of the back surface of the n-type GaN substrate 1
other than the regions 8 having concentrated dislocations so that
the insulator films 12 cover the regions 8 having concentrated
dislocations not to expose the same on the back surface of the
n-type GaN substrate 1, whereby it is possible to easily suppress
development of leakage current resulting from current flowing to
the regions 8 having concentrated dislocations on the back surface
of the n-type GaN substrate 1. Consequently, optical output can be
easily stabilized when the device is subjected to constant current
driving, whereby operations of the semiconductor device can be
easily stabilized. Further, the quantity of current flowing to the
regions 8 having concentrated dislocations can be so reduced that
it is possible to reduce unnecessary emission from the regions 8
having concentrated dislocations.
[0089] Fabrication processes for the nitride-based semiconductor
laser device according to the first embodiment are now described
with reference to FIGS. 1 to 12.
[0090] First, formation processes for the n-type GaN substrate 1
are described with reference to FIGS. 3 to 6. More specifically, an
AlGaN layer 22 having a thickness of about 20 nm is grown on a
sapphire substrate 21 by MOCVD (metal organic chemical vapor
deposition) while holding the substrate temperature at about
600.degree. C., as shown in FIG. 3. Thereafter the substrate
temperature is increased to about 1100.degree. C., for growing a
GaN layer 23 having a thickness of about 1 .mu.m on the AlGaN layer
22. At this time, longitudinally propagated dislocations are formed
on the overall region of the GaN layer 23 with a density of at
least about 5.times.10.sup.8 cm.sup.-2 (about 5.times.10.sup.9
cm.sup.-2, for example).
[0091] As shown in FIG. 4, mask layers 24 of SiN or SiO.sub.2
having a thickness of about 390 .mu.m and a thickness of about 200
nm are formed on the GaN layer 23 by plasma CVD at an interval of
about 10 .mu.m with a period of about 400 .mu.m in a striped
(elongated) shape.
[0092] As shown in FIG. 5, the mask layers 24 are employed as
selective growth masks for laterally growing an n-type GaN layer 1a
of about 150 .mu.m in thickness doped with oxygen having a carrier
concentration of about 5.times.10.sup.18 cm.sup.-3 on the GaN layer
23 by HVPE (halide vapor phase epitaxy) while holding the substrate
temperature at about 1100.degree. C. At this time, the n-type GaN
layer 1a is selectively longitudinally grown on portions of the GaN
layer 23 formed with no mask layers 24 and thereafter gradually
grown in the lateral direction. Therefore, the regions 8 having
concentrated dislocations propagated in the longitudinal direction
with a density of at least about 5.times.10.sup.8 cm.sup.-2 (about
5.times.10.sup.9 cm.sup.-2, for example) are formed on the portions
of the n-type GaN layer 1a located on the portions of the GaN layer
23 formed with no mask layers 24 in a striped (elongated) shape
with the width of about 10 .mu.m. On the other hand, dislocations
are laterally bent on the remaining portions of the n-type GaN
layer 1a located on the mask layers 24 due to the lateral growth of
the n-type GaN layer 1a so that longitudinally propagated
dislocations are hardly formed and the dislocation density is not
more than about 5.times.10.sup.7 cm.sup.-2 (about 1.times.10.sup.6
cm.sup.-2, for example). Thereafter regions (the sapphire substrate
etc.) including the mask layers 24 located under the n-type GaN
layer 1a are removed. Thus, the n-type GaN substrate 1 doped with
oxygen having the carrier concentration of about 5.times.10.sup.18
cm.sup.-3 is formed as shown in FIG. 6.
[0093] Then, the n-type layer 2, the n-type cladding layer 3, the
emission layer 4, the p-type cladding layer 5 and the p-type
contact layer 6 are successively formed on the n-type GaN substrate
1 by MOCVD, as shown in FIG. 7.
[0094] More specifically, the n-type layer 2 having the thickness
of about 100 nm and consisting of n-type GaN doped with Si having
the atomic density of about 5.times.10.sup.18 cm.sup.-3 is formed
on the n-type GaN substrate 1 with carrier gas consisting of
H.sub.2 and N.sub.2, material gas consisting of NH.sub.3 and TMGa
and dopant gas consisting of SiH.sub.4 while holding the substrate
temperature at the growth temperature of about 1100.degree. C.
Thereafter TMAl is further added to the material gas for growing
the n-type cladding layer 3 having the thickness of about 400 nm
and consisting of n-type Al.sub.0.05Ga.sub.0.95N doped with Si
having the atomic density of about 5.times.10.sup.18 cm.sup.-3 and
the carrier concentration of about 5.times.10.sup.18 cm.sup.-3 on
the n-type layer 2.
[0095] Then, the carrier blocking layer 4a having the thickness of
about 5 nm and consisting of n-type Al.sub.0.1Ga.sub.0.9N doped
with Si having the atomic density of about 5.times.10.sup.18
cm.sup.-3 and the carrier concentration of about 5.times.10.sup.18
cm.sup.-3 is grown on the n-type cladding layer 3 (see FIG. 7), as
shown in FIG. 2.
[0096] Then, the n-type light guide layer 4b consisting of n-type
GaN doped with Si having the atomic density of about
5.times.10.sup.18 cm.sup.-3 and the carrier concentration of about
5.times.10.sup.18 cm.sup.-3 is grown on the n-type carrier blocking
layer 4a with carrier gas consisting of H.sub.2 and N.sub.2,
material gas consisting of NH.sub.3 and TMGa and dopant gas
consisting of SiH.sub.4 while holding the substrate temperature at
the growth temperature of about 800.degree. C.
[0097] Thereafter TMIn is further added to the material gas for
alternately growing the four barrier layers 4c of undoped
In.sub.0.05Ga.sub.0.95N each having the thickness of about 20 nm
and the three well layers 4d of undoped In.sub.0.15Ga.sub.0.85N
each having the thickness of about 3 nm on the n-type light guide
layer 4b with no dopant gas, thereby forming the MQW active layer
4e.
[0098] The material gas is changed to that consisting of NH.sub.3
and TMGa and dopant gas consisting of Cp.sub.2Mg is employed for
growing the p-type light guide layer 4f having the thickness of
about 100 nm and consisting of p-type GaN doped with Mg having the
atomic density of about 4.times.10.sup.19 cm.sup.-3 and the carrier
concentration of about 5.times.10.sup.17 cm.sup.-3 on the MQW
active layer 4e. Thereafter TMAl is further added to the material
gas for growing the p-type cap layer 4g having the thickness of
about 20 nm and consisting of p-type Al.sub.0.1Ga.sub.0.9N doped
with Mg having the atomic density of about 4.times.10.sup.19
cm.sup.-3 and the carrier concentration of about 5.times.10.sup.17
cm.sup.-3 on the p-type light guide layer 4f. Thus, the emission
layer 4 consisting of the n-type carrier blocking layer 4a, the
n-type light guide layer 4b, the MQW active layer 4e, the p-type
light guide layer 4f and the p-type cap layer 4g is formed.
[0099] As shown in FIG. 7, the p-type cladding layer 5 having the
thickness of about 400 nm and consisting of p-type
Al.sub.0.05Ga.sub.0.95N doped with Mg having the atomic density of
about 4.times.10.sup.19 cm.sup.-3 and the carrier concentration of
about 5.times.10.sup.17 cm.sup.-3 is formed on the emission layer 4
with carrier gas consisting of H.sub.2 and N.sub.2, material gas
consisting of NH.sub.3, TMGa and TMAl and dopant gas consisting of
Cp.sub.2Mg while holding the substrate temperature at the growth
temperature of about 1100.degree. C. Thereafter the material gas is
changed to that consisting of NH.sub.3 and TMGa for growing the
p-type contact layer 6 having the thickness of about 10 nm and
consisting of p-type GaN doped with Mg having the atomic density of
about 4.times.10.sup.19 cm.sup.-3 and the carrier concentration of
about 5.times.10.sup.17 cm.sup.-3 on the p-type cladding layer
5.
[0100] At this time, dislocations of the n-type GaN substrate 1 are
propagated to form the regions 8 having concentrated dislocations
extending from the back surface of the n-type GaN substrate 1 to
the upper surface of the p-type contact layer 6.
[0101] Thereafter annealing is performed in a nitrogen gas
atmosphere under a temperature condition of about 800.degree.
C.
[0102] Then, the p-side ohmic electrode 9 consisting of the Pt
layer having the thickness of about 5 nm, the Pd layer having the
thickness of about 100 nm and the Au layer having the thickness of
about 150 nm in ascending order is formed on the prescribed region
of the p-type contact layer 6 by vacuum evaporation and an Ni layer
25 having a thickness of about 250 nm is thereafter formed on the
p-side ohmic electrode 9 by vacuum evaporation. At this time, the
p-side ohmic electrode 9 and the Ni layer 25 are formed in a
striped (elongated) shape with a width of about 1.5 .mu.m.
[0103] As shown in FIG. 9, the Ni layer 25 is employed as a mask
for partially dry-etching the p-type contact layer 6 and the p-type
cladding layer 5 by thicknesses of about 300 nm from the upper
surfaces thereof respectively with Cl.sub.2-based gas. Thus, the
striped (elongated) ridge portion 7 constituting of the projecting
portion of the p-type cladding layer 5 and the p-type contact layer
6 is formed to extend in the prescribed direction. Thereafter the
Ni layer 25 is removed.
[0104] Then, an SiN film (not shown) having a thickness of about
250 nm is formed to cover the overall surface by plasma CVD and a
portion of this SiN film located on the upper surface of the p-side
ohmic electrode 9 is removed thereby forming the insulator films 10
consisting of SiN having the thickness of about 250 nm, as shown in
FIG. 10.
[0105] Then, the p-side pad electrode 11 consisting of the Ti layer
having the thickness of about 100 nm, the Pd layer having the
thickness of about 100 nm and the Au layer having the thickness of
about 3 .mu.m in ascending order is formed on the front surfaces of
the insulator films 10 by vacuum evaporation to be in contact with
the upper surface of the p-side ohmic electrode 9, as shown in FIG.
11. Thereafter the back surface of the n-type GaN substrate 1 is
polished so that the thickness thereof is about 100 .mu.m.
[0106] According to the first embodiment, an SiO.sub.2 film (not
shown) having a thickness of about 250 nm is formed on the overall
back surface of the n-type GaN substrate 1 by plasma CVD, an SOG
(spin-on-glass) method (application) or electron beam evaporation.
Thereafter a portion of the SiO.sub.2 film located on the region of
the back surface of the n-type GaN substrate 1 other than the
regions 8 having concentrated dislocations is removed, thereby
forming the insulator films 12 of SiO.sub.2 having the thickness of
about 250 nm and the width of about 40 .mu.m, as shown in FIG. 12.
Thus, the insulator films 12 cover the regions 8 having
concentrated dislocations on the back surface of the n-type GaN
substrate 1.
[0107] Thereafter the n-side electrode 13 is formed on the back
surface of the n-type GaN substrate 1 by vacuum evaporation to be
in contact with the region of the back surface of the n-type GaN
substrate 1 other than the regions 8 having concentrated
dislocations while covering the insulator films 12, as shown in
FIG. 1. More specifically, the Al layer having the thickness of
about 10 nm, the Pt layer having the thickness of about 20 nm and
the Au layer having the thickness of about 300 nm are successively
formed from the side closer to the back surface of the n-type GaN
substrate 1, thereby forming the n-side electrode 13. Finally,
scribing lines (not shown) are formed on the side of the device
provided with the p-side pad electrode 11 and the device is cleaved
into each chip along the scribing lines, thereby forming the
nitride-based semiconductor laser device according to the first
embodiment.
Second Embodiment
[0108] Referring to FIG. 13, prescribed regions of ends of an
n-type GaN substrate 1 and nitride-based semiconductor layers 2 to
5 are removed in a nitride-based semiconductor laser device
according to a second embodiment of the present invention
dissimilarly to the aforementioned first embodiment. Therefore, the
nitride-based semiconductor laser device is provided with no
regions 8 having concentrated dislocations dissimilarly to the
first embodiment shown in FIG. 1. An n-side electrode 33 consisting
of an Al layer having a thickness of about 10 nm, a Pt layer having
a thickness of about 20 nm and an Au layer having a thickness of
about 300 nm successively from the side closer to the back surface
of the n-type GaN substrate 1 is formed on the back surface of the
n-type GaN substrate 1 to be in contact with the overall back
surface of the n-type GaN substrate 1. The n-side electrode 33 is
an example of the "back electrode" in the present invention. The
remaining structure of the second embodiment is similar to that of
the aforementioned first embodiment.
[0109] Fabrication processes for the nitride-based semiconductor
laser device according to the second embodiment are described with
reference to FIGS. 13 to 15.
[0110] First, layers and films up to a p-side pad electrode 11 are
formed through fabrication processes similar to those of the first
embodiment shown in FIGS. 3 to 11, and the back surface of the
n-type GaN substrate 1 is thereafter polished. Then, the n-side
electrode 33 having a thickness and a composition similar to those
of the n-side electrode 13 in the aforementioned first embodiment
is formed on the back surface of the n-type GaN substrate 1 to be
in contact with the overall back surface of the n-type GaN
substrate 1, thereby obtaining a structure shown in FIG. 14.
[0111] According to the second embodiment, scribing lines 40 are
finally formed on the device from the side provided with the p-side
pad electrode 11 to hold regions 8 having concentrated dislocations
therebetween. More specifically, the scribing lines 40 are formed
on positions of about 10 .mu.m from center lines (not shown)
between adjacent lines. Thereafter the device is cleaved into each
chip along the scribing lines 40 (see FIG. 14) for removing the
regions 8 having concentrated dislocations extending from the back
surface of the n-type GaN substrate 1 to the front surfaces of flat
portions of a p-type cladding layer 5 other than a projecting
portion with the same width, as shown in FIG. 15. Thus, the
nitride-based semiconductor laser device according to the second
embodiment is formed as shown in FIG. 13.
[0112] In the fabrication processes according to the second
embodiment, as hereinabove described, the device is cleaved into
each chip for removing the regions 8 having concentrated
dislocations extending from the back surface of the n-type GaN
substrate 1 to the front surfaces of the flat portions of the
p-type cladding layer 5 other than the projecting portion with the
same width, whereby it is possible to easily suppress development
of leakage current resulting from current flowing to the regions 8
having concentrated dislocations. Consequently, optical output can
be easily stabilized when the device is subjected to constant
current driving, whereby a stably operating nitride-based
semiconductor laser device can be easily fabricated.
[0113] Further, it is possible to easily inhibit the regions 8
having concentrated dislocations from absorbing light emitted from
an emission layer 4. Thus, light absorbed by the regions 8 having
concentrated dislocations can be inhibited from reemission at an
unintended wavelength, whereby deterioration of color purity
resulting from such reemission can be suppressed.
Third Embodiment
[0114] Referring to FIGS. 16 and 17, a third embodiment of the
present invention is applied to a light-emitting diode device,
dissimilarly to the aforementioned first embodiment.
[0115] According to the third embodiment, an n-type cladding layer
52 having a thickness of about 5 .mu.m and consisting of n-type GaN
doped with Si is formed on an n-type GaN substrate 1, as shown in
FIG. 16. The n-type cladding layer 52 is an example of the
"semiconductor element layer" in the present invention.
[0116] An emission layer 53 is formed on the n-type cladding layer
52. As shown in FIG. 17, this emission layer 53 is constituted of
an MQW active layer 53c formed by alternately stacking six barrier
layers 53a of undoped GaN each having a thickness of about 5 nm and
five well layers 53b of undoped In.sub.0.35Ga.sub.0.65N each having
a thickness of about 5 nm and a protective layer 53d of undoped GaN
having a thickness of about 10 nm. The emission layer 53 is an
example of the "semiconductor element layer" in the present
invention.
[0117] As shown in FIG. 16, a p-type cladding layer 54 having a
thickness of about 0.15 .mu.m and consisting of p-type
Al.sub.0.05Ga.sub.0.95N doped with Mg is formed on the emission
layer 53. A p-type contact layer 55 having a thickness of about 0.3
.mu.m and consisting of p-type GaN doped with Mg is formed on the
p-type cladding layer 54. The p-type cladding layer 54 and the
p-type contact layer 55 are examples of the "semiconductor element
layer" in the present invention.
[0118] Regions 56 having concentrated dislocations, extending from
the back surface of the n-type GaN substrate 1 to the upper surface
of the p-type contact layer 55, are formed in the vicinity of ends
of the n-type GaN substrate 1 and the nitride-based semiconductor
layers 52 to 55.
[0119] In the light-emitting diode device according to the third
embodiment, insulator films 57 of SiO.sub.2 having a thickness of
about 250 nm and a width of about 40 .mu.m are formed on the
regions 56 having concentrated dislocations on the p-type contact
layer 55. A p-side ohmic electrode 58 is formed on the p-type
contact layer 55 to be in contact with a region of the upper
surface of the p-type contact layer 55 other than the regions 56
having concentrated dislocations while covering the insulator films
57. This p-side ohmic electrode 58 consists of a Pt layer having a
thickness of about 5 nm, a Pd layer having a thickness of about 100
nm and an Au layer having a thickness of about 5 nm in ascending
order. The p-side ohmic electrode 58 is an example of the "front
electrode" in the present invention. A p-side pad electrode 59
consisting of a Ti layer having a thickness of about 100 nm, a Pd
layer having a thickness of about 100 nm and an Au layer having a
thickness of about 3 .mu.m in ascending order is formed on the
p-side ohmic electrode 58.
[0120] According to the third embodiment, an n-side ohmic
transparent electrode 60 is formed on the back surface of the
n-type GaN substrate 1 to be in contact with a region of the back
surface of the n-type GaN substrate 1 other than the regions 56
having concentrated dislocations. This n-side ohmic transparent
electrode 60 consists of an Al layer having a thickness of about 5
nm, a Pt layer having a thickness of about 15 nm and an Au layer
having a thickness of about 40 nm successively from the side closer
to the back surface of the n-type GaN substrate 1. The distance W
between each end surface of the n-side ohmic transparent electrode
60 and each end surface of the device is about 40 .mu.m. The n-side
transparent electrode 60 is an example of the "back electrode" in
the present invention. N-side pad electrodes 61 consisting of Ti
layers having a thickness of about 100 nm, Pd layers having a
thickness of about 100 nm and Au layers having a thickness of about
3 .mu.m successively from the side closer to the back surface of
the n-side ohmic transparent electrode 60 are formed on prescribed
regions of the back surface of the n-side ohmic transparent
electrode 60.
[0121] According to the third embodiment, as hereinabove described,
the insulator films 57 are formed on the regions 56 having
concentrated dislocations on the p-type contact layer 55 while the
p-side ohmic electrode 58 is formed to be in contact with the
region of the upper surface of the p-type contact layer 55 other
than the regions 56 having concentrated dislocations so that the
insulator films 57 cover the regions 56 having concentrated
dislocations not to expose the same on the upper surface of the
p-type contact layer 55, whereby it is possible to suppress
development of leakage current resulting from current flowing to
the regions 56 having concentrated dislocations on the upper
surface of the p-type contact layer 55. Further, the n-side ohmic
transparent electrode 60 is formed on the back surface of the
n-type GaN substrate 1 to be in contact with the region of the back
surface of the n-type GaN substrate 1 other than the regions 56
having concentrated dislocations, whereby it is also possible to
suppress development of leakage current resulting from current
flowing to the regions 56 having concentrated dislocations on the
back surface of the n-type GaN substrate 1. Consequently, optical
output can be easily stabilized when the device is subjected to
constant current driving, whereby operations of the semiconductor
device can be easily stabilized. Further, the quantity of current
flowing to the regions 56 having concentrated dislocations can be
so reduced that it is possible to reduce unnecessary emission from
the regions 56 having concentrated dislocations.
[0122] According to the third embodiment, further, the distance W
between the sides of the n-side ohmic transparent electrode 60 and
the device is set to about 40 .mu.m so that solder can be inhibited
from flowing toward the sides of the device when the solder is
welded to the n-side pad electrodes 61 formed on the n-side ohmic
transparent electrode 60. Thus, the device can be inhibited from a
defective short.
[0123] Fabrication processes for the light-emitting diode device
according to the third embodiment are described with reference to
FIGS. 16 to 21.
[0124] First, the n-type cladding layer 52, the emission layer 53,
the p-type cladding layer 54 and the p-type contact layer 55 are
successively grown on the n-type GaN substrate 1 by MOCVD, as shown
in FIG. 18.
[0125] More specifically, the n-type cladding layer 52 having the
thickness of about 5 .mu.m and consisting of n-type GaN doped with
Si is grown on the n-type GaN substrate 1 with carrier gas
consisting of H.sub.2 and N.sub.2 (H.sub.2 content: about 50%),
material gas consisting of NH.sub.3 and TMGa and dopant gas
consisting of SiH.sub.4 at a growth rate of about 3 .mu.m/h while
holding the substrate temperature at a growth temperature of about
1000.degree. C. to about 1200.degree. C. (about 1150.degree. C.,
for example).
[0126] Then, the six barrier layers 53a of undoped GaN each having
the thickness of about 5 nm and the five well layers 53b of undoped
In.sub.0.35Ga.sub.0.65N each having the thickness of about 5 nm are
alternately grown on the n-type cladding layer 52 (see FIG. 18)
with carrier gas consisting of H.sub.2 and N.sub.2 (H.sub.2
content: about 1% to about 5%) and material gas consisting of
NH.sub.3, TEGa and TMIn at a growth rate of about 0.4 nm/s. while
holding the substrate temperature at a growth temperature of about
700.degree. C. to about 1000.degree. C. (about 850.degree. C., for
example) thereby forming the MQW active layer 53c, as shown in FIG.
17. Then, the protective layer 53 of undoped GaN having the
thickness of about 10 nm is grown at a growth rate of about 0.4
nm/s. Thus, the emission layer 53 consisting of the MQW active
layer 53c and the protective layer 53d is formed.
[0127] As shown in FIG. 18, the p-type cladding layer 54 having the
thickness of about 0.15 .mu.m and consisting of p-type
Al.sub.0.05Ga.sub.0.95N doped with Mg is grown on the emission
layer 53 with carrier gas consisting of H.sub.2 and N.sub.2
(H.sub.2 content: about 1% to about 3%), material gas consisting of
NH.sub.3, TMGa and TMAl and dopant gas consisting of Cp.sub.2Mg at
a growth rate of about 3 .mu.m/h. while holding the substrate
temperature at a growth temperature of about 1000.degree. C. to
about 1200.degree. C. (about 1150.degree. C., for example). Then,
the material gas is changed to that consisting of NH.sub.3 and TMGa
for growing the p-type contact layer 55 having the thickness of
about 0.3 .mu.m and consisting of p-type GaN doped with Mg on the
p-type cladding layer 54 at a growth rate of about 3 .mu.m/h.
[0128] At this time, dislocations of the n-type GaN substrate 1 are
propagated to form the regions 56 having concentrated dislocations
extending from the back surface of the n-type GaN substrate 1 to
the upper surface of the p-type contact layer 55. The H.sub.2
content of the carrier gas consisting of H.sub.2 and N.sub.2 is so
reduced that the Mg dopant can be activated without performing
annealing in a nitrogen gas atmosphere.
[0129] According to the third embodiment, an SiO.sub.2 film (not
shown) having a thickness of about 250 nm is formed on the overall
upper surface of the p-type contact layer 55 by plasma CVD, an SOG
method (application) or electron beam evaporation. Thereafter a
portion of the SiO.sub.2 film located on a region of the p-type
contact layer 55 other than the regions 56 having concentrated
dislocations is removed thereby forming the insulator films 57
having the thickness of about 250 nm and the width of about 40
.mu.m, as shown in FIG. 19. Thus, the insulator films 57 cover the
regions 56 having concentrated dislocations on the upper surface of
the p-type contact layer 55.
[0130] As shown in FIG. 20, the p-side ohmic electrode 58 is formed
on the p-type contact layer 55 by vacuum evaporation to be in
contact with the region of the upper surface of the p-type contact
layer 55 other than the regions 56 having concentrated dislocations
while covering the insulator films 57. More specifically, the Pt
layer having the thickness of about 5 nm, the Pd layer having the
thickness of about 100 nm and the Au layer having the thickness of
about 150 nm are formed in ascending order, thereby forming the
p-side ohmic electrode 58. Then, the p-side pad electrode 59
consisting of the Ti layer having the thickness of about 100 nm,
the Pd layer having the thickness of about 100 nm and the Au layer
having the thickness of about 3 .mu.m in ascending order is formed
on the p-side ohmic electrode 58 by vacuum evaporation. Thereafter
the back surface of the n-type GaN substrate 1 is polished so that
the thickness of the n-type GaN substrate 1 is about 100 .mu.m.
[0131] According to the third embodiment, a metal layer (not shown)
consisting of an Al layer having a thickness of about 5 nm, a Pt
layer having a thickness of about 15 nm and an Au layer having a
thickness of about 40 nm successively from the side closer to the
back surface of the n-type GaN substrate 1 is formed on the overall
back surface of the n-type GaN substrate 1 by vacuum evaporation.
Thereafter a portion of the metal layer located on a region of the
back surface of the n-type GaN substrate 1 other than the regions
56 having concentrated dislocations is removed thereby forming the
n-side ohmic transparent electrode 60, as shown in FIG. 21. At this
time, the portion of the metal layer is so removed that the
distance W between the sides of the n-side ohmic transparent
electrode 60 and the device is about 40 .mu.m.
[0132] Thereafter the n-side pad electrodes 61 consisting of the Ti
layers having the thickness of about 100 nm, the Pd layers having
the thickness of about 100 nm and the Au layers having the
thickness of about 3 .mu.m successively from the side closer to the
back surface of the n-side ohmic transparent electrode 60 are
formed on the prescribed regions of the back surface of the n-side
ohmic transparent electrode 60 by vacuum evaporation, as shown in
FIG. 16. Finally, scribing lines (not shown) are formed from the
side of the device provided with the p-side pad electrode 59 and
the device is cleaved into each chip along the scribing lines,
thereby forming the light-emitting diode device according to the
third embodiment.
Fourth Embodiment
[0133] Referring to FIG. 22, n-type current blocking layers 80
having a thickness of about 0.4 .mu.m and consisting of n-type
Al.sub.0.12Ga.sub.0.88N doped with Ge are formed on the front
surfaces of flat portions of a p-type cladding layer 5 other than a
projecting portion in a nitride-based semiconductor laser device
according to a fourth embodiment of the present invention,
dissimilarly to the aforementioned first embodiment.
[0134] According to the fourth embodiment, regions 8 having
concentrated dislocations extending from the back surface of an
n-type GaN substrate 1 to the upper surfaces of the n-type current
blocking layers 80 are formed in the vicinity of ends of the n-type
GaN substrate 1 and nitride-based semiconductor layers 2 to 5 and
80. A p-side ohmic electrode 79 consisting of a Pt layer having a
thickness of about 5 nm, a Pd layer having a thickness of about 100
nm and an Au layer having a thickness of about 150 nm in ascending
order is formed on the n-type current blocking layers 80 to be in
contact with the upper surface of a p-type contact layer 6
constituting a ridge portion 7. A p-side pad electrode 81
consisting of a Ti layer having a thickness of about 100 nm, a Pd
layer having a thickness of about 100 nm and an Au layer having a
thickness of about 3 .mu.m in ascending order is formed on the
p-side ohmic electrode 79. The n-type current blocking layers 80
are examples of the "semiconductor element layer" in the present
invention, and the p-side ohmic electrode 79 is an example of the
"front electrode" in the present invention.
[0135] According to the fourth embodiment, insulator films 12 of
SiN having a thickness of about 250 nm and a width of about 40
.mu.m are formed to cover the regions 8 having concentrated
dislocations on the back surface of the n-type GaN substrate 1,
similarly to the aforementioned first embodiment. An n-side
electrode 13 is formed on the back surface of the n-type GaN
substrate 1 to be in contact with the region of the back surface of
the n-type GaN substrate 1 other than the regions 8 having
concentrated dislocations while covering the insulator films
12.
[0136] The remaining structure of the fourth embodiment is similar
to that of the aforementioned first embodiment.
[0137] According to the fourth embodiment, effects similar to those
of the aforementioned embodiment can be attained also in the
nitride-based semiconductor laser device formed with the n-type
current blocking layers 80 consisting of n-type
Al.sub.0.12Ga.sub.0.88N as current blocking layers, as hereinabove
described. In other words, the insulator films 12 are formed on the
regions 8 having concentrated dislocations on the back surface of
the n-type GaN substrate 1 while the n-side electrode 13 is formed
to be in contact with the region of the back surface of the n-type
GaN substrate 1 other than the regions 8 having concentrated
dislocations so that the insulator films 12 cover the regions 8
having concentrated dislocations not to expose the same on the back
surface of the n-type GaN substrate 1, whereby it is possible to
easily suppress development of leakage current resulting from
current flowing to the regions 8 having concentrated dislocations
on the back surface of the n-type GaN substrate 1. Consequently,
optical output can be easily stabilized when the device is
subjected to constant current driving, whereby operations of the
semiconductor device can be easily stabilized. In the fourth
embodiment, however, the regions 8 having concentrated dislocations
are in contact with the p-side ohmic electrode 79 on the upper
surfaces of the n-type current blocking layers 80, and hence
leakage current is more easily developed as compared with the
aforementioned first embodiment.
[0138] Fabrication processes for the nitride-based semiconductor
laser device according to the fourth embodiment are now described
with reference to FIGS. 22 to 26.
[0139] First, layers up to a p-type contact layer 6 are formed
through fabrication processes similar to those of the first
embodiment shown in FIGS. 3 to 7, and annealing is thereafter
performed in a nitrogen gas atmosphere. Then, an SiN layer 91
having a thickness of about 200 nm is formed on a prescribed region
of the p-type contact layer 6 by plasma CVD, and an Ni layer 92
having a thickness of about 250 nm is thereafter formed on the SiN
layer 91, as shown in FIG. 23. At this time, the SiN layer 91 and
the Ni layer 92 are formed in a striped (elongated) shape with
widths of about 1.5 .mu.m.
[0140] Then, the Ni layer 92 is employed as a mask for dry-etching
portions of the p-type contact layer 6 and the p-type cladding
layer 5 by thicknesses of about 300 nm from the upper surfaces
thereof with Cl.sub.2-based gas, as shown in FIG. 24. Thus, a
striped (elongated) ridge portion 7 constituted of the projecting
portion of the p-type cladding layer 5 and the p-type contact layer
6 is formed to extend in a prescribed direction. Thereafter the Ni
layer 92 is removed.
[0141] As shown in FIG. 25, the n-type current blocking layers 80
having the thickness of about 0.4 .mu.m and consisting of n-type
Al.sub.0.12Ga.sub.0.88N doped with Ge are formed on the front
surfaces of the flat portions of the p-type cladding layer 5 other
than the projecting portion by MOCVD through the SiN layer 91
serving as a selective growth mask. At this time, dislocations on
the front surfaces of the flat portions of the p-type cladding
layer 5 other than the projecting portion are propagated to form
the regions 8 having concentrated dislocations extending from the
back surface of the n-type GaN substrate 1 to the upper surfaces of
the n-type current blocking layers 80. Thereafter the SiN layer 91
is removed.
[0142] As shown in FIG. 26, the p-side ohmic electrode 79
consisting of the Pt layer having the thickness of about 5 nm, the
Pd layer having the thickness of about 100 nm and the Au layer
having the thickness of about 150 nm in ascending order is formed
on the n-type current blocking layers 80 by vacuum evaporation to
be in contact with the upper surface of the p-type contact layer 6
constituting the ridge portion 7. Thereafter the p-side pad
electrode 81 consisting of the Ti layer having the thickness of
about 100 nm, the Pd layer having the thickness of about 100 nm and
the Au layer having the thickness of about 3 .mu.m in ascending
order is formed on the p-side ohmic electrode 79. Thereafter the
back surface of the n-type GaN substrate 1 is polished so that the
thickness of the n-type GaN substrate 1 is about 100 .mu.m.
[0143] As shown in FIG. 22, the insulator films 12 are formed to
cover the regions 8 having concentrated dislocations on the back
surface of the n-type GaN substrate 1 through a fabrication process
similar to that of the first embodiment shown in FIG. 12.
Thereafter the n-side electrode 13 is formed on the back surface of
the n-type GaN substrate 1 by vacuum evaporation to be in contact
with the region of the n-type GaN substrate 1 other than the
regions 8 having concentrated dislocations while covering the
insulator films 12. Finally, scribing lines (not shown) are formed
from the side of the device provided with the p-side pad electrode
81 and the device is thereafter cleaved into each chip along the
scribing lines, thereby forming the nitride-based semiconductor
laser device according to the fourth embodiment.
Fifth Embodiment
[0144] Referring to FIG. 27, insulator films 100 of SiO.sub.2
having a thickness of about 250 nm and a width of about 40 .mu.m
are formed on regions 56 having concentrated dislocations on the
back surface of an n-type GaN substrate 1 in a light-emitting diode
device according to a fifth embodiment of the present invention,
dissimilarly to the aforementioned third embodiment.
[0145] According to the fifth embodiment, an n-side ohmic
transparent electrode 110 having a thickness and a composition
similar to those of the n-side ohmic transparent electrode 60 in
the aforementioned third embodiment is formed on the back surface
of the n-type GaN substrate 1 to be in contact with a region of the
back surface of the n-type GaN substrate 1 other than the regions
56 having concentrated dislocations while covering the insulator
films 100. This n-side ohmic transparent electrode 110 consists of
an Al layer having a thickness of about 5 nm, a Pt layer having a
thickness of about 15 nm and an Au layer having a thickness of
about 40 nm successively from the side closer to the back surface
of the n-type GaN substrate 1. N-side pad electrodes 111 consisting
of Ti layers having a thickness of about 100 nm, Pd layers having a
thickness of about 100 nm and Au layers having a thickness of about
3 .mu.m from the side closer to the back surface of the n-side
ohmic transparent electrode 110 are formed on prescribed regions of
the back surface of the n-side ohmic transparent electrode 110. The
n-side ohmic transparent electrode 110 is an example of the "back
electrode" in the present invention. The remaining structure of the
fifth embodiment is similar to that of the aforementioned third
embodiment.
[0146] According to the fifth embodiment, as hereinabove described,
the insulator films 100 are formed on the regions 56 having
concentrated dislocations on the back surface of the n-type GaN
substrate 1 while the n-side ohmic transparent electrode 110 is
formed to be in contact with the region of the back surface of the
n-type GaN substrate 1 other than the regions 56 having
concentrated dislocations so that the insulator films 100 cover the
regions 56 having concentrated dislocations not to expose the same
on the back surface of the n-type GaN substrate 1, whereby it is
possible to easily suppress development of leakage current
resulting from current flowing to the regions 56 having
concentrated dislocations on the back surface of the n-type GaN
substrate 1. Further, the insulator films 57 cover the regions 56
having concentrated dislocations not to expose the same on the
upper surface of a p-type contact layer 55 similarly to the
aforementioned third embodiment, whereby it is also possible to
easily suppress development of leakage current flowing to the
regions 56 having concentrated dislocations on the upper surface of
the p-type contact layer 55. Consequently, optical output can be
further easily stabilized when the device is subjected to constant
current driving, whereby operations of the semiconductor device can
be further easily stabilized. Further, the quantity of current
flowing to the regions 56 having concentrated dislocations can be
so reduced that it is possible to reduce unnecessary emission from
the regions 56 having concentrated dislocations.
[0147] Fabrication processes for the light-emitting diode device
according to the fifth embodiment are described with reference to
FIGS. 27 and 28.
[0148] First, layers and films up to the p-side pad electrode 59
are formed through fabrication processes similar to those of the
third embodiment shown in FIGS. 18 to 20, and the back surface of
the n-type GaN substrate 1 is thereafter polished. According to the
fifth embodiment, an SiO.sub.2 film (not shown) having a thickness
of about 250 nm is formed on the overall back surface of the n-type
GaN substrate 1 by plasma CVD, an SOG method (application) or
electron beam evaporation. Thereafter a portion of the SiO.sub.2
film located on the region of the back surface of the n-type GaN
substrate 1 other than the regions 56 having concentrated
dislocations is removed thereby forming the insulator films 100 of
SiO.sub.2 having the thickness of about 250 .mu.m and the width of
about 40 .mu.m, as shown in FIG. 28. Thus, the insulator films 100
cover the regions 56 having concentrated dislocations on the back
surface of the n-type GaN substrate 1. Then, the n-side ohmic
transparent electrode 110 is formed on the back surface of the
n-type GaN substrate 1 by vacuum evaporation to be in contact with
the region of the back surface of the n-type GaN substrate 1 other
than the regions 56 having concentrated dislocations while covering
the insulator films 100. More specifically, the Al layer having the
thickness of about 5 nm, the Pt layer having the thickness of about
15 nm and the Au layer having the thickness of about 40 nm are
formed successively from the side closer to the back surface of the
n-type GaN substrate 1, thereby forming the n-side ohmic
transparent electrode 110.
[0149] As shown in FIG. 27, the n-side pad electrodes 111
consisting of the Ti layers having the thickness of about 100 nm,
the Pd layers having the thickness of about 100 nm and the Au
layers having the thickness of about 3 .mu.m successively from the
side closer to the back surface of the n-side ohmic transparent
electrode 110 are formed on the prescribed regions of the back
surface of the n-side ohmic transparent electrode 110 by vacuum
evaporation. Finally, scribing lines (not shown) are formed from
the side of the device provided with the p-side pad electrode 59
and the device is thereafter cleaved into each chip along the
scribing lines, thereby forming the light-emitting diode device
according to the fifth embodiment.
Sixth Embodiment
[0150] Referring to FIG. 29, ion implantation layers 120 having a
depth reaching the inner part of an n-type cladding layer 3 from
the front surfaces of flat portions of a p-type cladding layer 5
other than a projecting portion are provided on regions 8 having
concentrated dislocations in a nitride-based semiconductor laser
device according to a sixth embodiment of the present invention,
dissimilarly to the aforementioned first embodiment. The ion
implantation layers 120 are formed by ion-implanting an impurity
such as carbon (C), whereby the regions provided with the ion
implantation layers 120 exhibit high resistance. The ion
implantation layers 120 are examples of the "high resistance
region" in the present invention. The remaining structure of the
sixth embodiment is similar to that of the aforementioned first
embodiment.
[0151] According to the sixth embodiment, as hereinabove described,
the ion implantation layers 120 having the depth reaching the inner
part of the n-type cladding layer 3 from the front surfaces of the
flat portions of the p-type cladding layer 5 other than the
projecting portion are provided on the regions 8 having
concentrated dislocations so that current hardly flows to the
regions 8 having concentrated dislocations on the front surfaces of
the flat portions of the p-type cladding layer 5 other than the
projecting portion due to the ion implantation layers 120, whereby
it is possible to suppress development of leakage current resulting
from current flowing to the regions 8 having concentrated
dislocations on the front surfaces of the flat portions of the
p-type cladding layer 5 other than the projecting portion.
Consequently, optical output can be easily stabilized when the
device is subjected to constant current driving, whereby operations
of the semiconductor device can be easily stabilized.
[0152] The remaining effects of the sixth embodiment are similar to
those of the aforementioned first embodiment.
[0153] In fabrication processes for the nitride-based semiconductor
laser device according to the sixth embodiment, carbon (C) is
ion-implanted into the regions 8 having concentrated dislocations
on the top surfaces of the flat portions of the p-type cladding
layer 5 other than the projecting portion at the energy of about
150 kV after a fabrication process similar to that of the first
embodiment shown in FIG. 9 and before formation of insulator films
10. Thus, the ion implantation layers 120 having the ion
implantation depth (thickness) reaching the inner part of the
n-type cladding layer 3 from the front surfaces of the flat
portions of the p-type cladding layer 5 other than the projecting
portion are formed and arranged in the regions 8 having
concentrated dislocations. The dose for the ion implantation is
preferably set to at least about 1.times.10.sup.14 cm.sup.-2.
Seventh Embodiment
[0154] Referring to FIG. 30, recess portions 130 having a depth
reaching the upper surface of an n-type cladding layer 3 from the
upper surfaces of n-type current blocking layers 80 are provided on
regions located inward beyond regions 8 having concentrated
dislocations (in the range of about 50 .mu.m to about 100 .mu.m
from both ends of the device) in a nitride-based semiconductor
laser device according to a seventh embodiment of the present
invention in a structure similar to that (see FIG. 22) of the
aforementioned fourth embodiment. A p-side ohmic electrode 149
consisting of a Pt layer having a thickness of about 5 nm, a Pd
layer having a thickness of about 100 nm and an Au layer having a
thickness of about 150 nm in ascending order is formed on a region
located inward beyond the recess portions 130 above the n-type
current blocking layers 80 to be in contact with the upper surface
of a p-type contact layer 6. A p-side pad electrode 151 consisting
of a Ti layer having a thickness of about 100 nm, a Pd layer having
a thickness of about 100 nm and an Au layer having a thickness of
about 3 .mu.m in ascending order is formed on the p-side ohmic
electrode 149. The p-side ohmic electrode 149 is an example of the
"front electrode" in the present invention. The remaining structure
of the seventh embodiment is similar to that of the aforementioned
fourth embodiment.
[0155] According to the seventh embodiment, as hereinabove
described, the recess portions 130 having the depth reaching the
upper surface of the n-type cladding layer 3 from the upper
surfaces of the n-type current blocking layers 80 are provided on
the regions located inward beyond the regions 8 having concentrated
dislocations (in the range of about 50 .mu.m to about 100 .mu.m
from both ends) while the p-side ohmic electrode 149 is formed on
the region located inward beyond the recess portions 130 above the
n-type current blocking layers 80 to be in contact with the upper
surface of the p-type contact layer 6, whereby it is possible to
suppress development of leakage current resulting from current
flowing to the regions 8 having concentrated dislocations on the
upper surfaces of the n-type current blocking layers 80.
Consequently, optical output can be stabilized when the device is
subjected to constant current driving, whereby operations of the
semiconductor device can be stabilized. Further, the recess
portions 130 part the regions of the p-type cladding layer 5 and
the n-type current blocking layers 80 located inward beyond the
regions 8 having concentrated dislocations and the regions 8 having
concentrated dislocations from each other, whereby the regions 8
having concentrated dislocations can be inhibited from absorbing
light emitted from an emission layer 4 located inward beyond the
regions 8 having concentrated dislocations. Thus, light absorbed by
the regions 8 having concentrated dislocations can be inhibited
from reemission at an unintentional wavelength, whereby
deterioration of color purity resulting from such reemission can be
suppressed.
[0156] The remaining effects of the seventh embodiment are similar
to those of the aforementioned first embodiment.
[0157] In fabrication processes for the nitride-based semiconductor
laser device according to the seventh embodiment, the n-type
current blocking layers 80 are formed through a fabrication process
similar to that of the fourth embodiment shown in FIG. 25, and the
recess portions 130 having the depth reaching the upper surface of
the n-type cladding layer 3 from those of the n-type current
blocking layers 80 are thereafter formed on the regions located
inward beyond the regions 8 having concentrated dislocations by RIE
(reactive ion etching). A metal layer (not shown) for constituting
the p-side ohmic electrode 149 and the p-side pad electrode 151 is
formed on the overall surface including the inner surfaces of the
recess portions 130 by vacuum evaporation. Thereafter portions of
the metal layer located on the regions 8 having concentrated
dislocations on the n-type current blocking layers 80 and the inner
surfaces of the recess portions 130 are removed. Thus, the p-side
ohmic electrode 149 is formed on the region located inward beyond
the recess portions 130 on the n-type current blocking layers 80 to
be in contact with the upper surface of the p-type contact layer 6
while the p-side pad electrode 151 is formed on the p-side ohmic
electrode 149.
[0158] Referring to FIG. 31, recess portions 160 provided on
regions located inward beyond regions 8 having concentrated
dislocations have a depth reaching the inner part of an n-type
cladding layer 3 from the upper surfaces of n-type current blocking
layers 80 in a nitride-based semiconductor laser device according
to a first modification of the seventh embodiment. Effects similar
to those of the aforementioned seventh embodiment can be attained
also according to this structure.
[0159] Referring to FIG. 32, insulator films 170 are formed to fill
up regions 8 having concentrated dislocations on the upper surfaces
of n-type current blocking layers 80 and recess portions 130 in a
nitride-based semiconductor laser device according to a second
modification of the seventh embodiment. A p-side ohmic electrode
179 consisting of a Pt layer having a thickness of about 5 nm, a Pd
layer having a thickness of about 100 nm and an Au layer having a
thickness of about 150 nm in ascending order is formed on the
overall upper surfaces of the n-type current blocking layers 80,
the insulator films 170 and a p-type contact layer 6. Further, a
p-side pad electrode 181 consisting of a Ti layer having a
thickness of about 100 nm, a Pd layer having a thickness of about
100 nm and an Au layer having a thickness of about 3 .mu.m in
ascending order is formed on the p-side ohmic electrode 179.
Effects similar to those of the aforementioned seventh embodiment
can be attained also according to this structure.
Eighth Embodiment
[0160] Referring to FIG. 33, ion implantation layers 190 having a
depth of about 0.2 .mu.m from the upper surfaces of n-type current
blocking layers 80 are provided on regions 8 having concentrated
dislocations in a nitride-based semiconductor laser device
according to an eighth embodiment of the present invention in a
structure similar to that of the aforementioned fourth embodiment
(see FIG. 22). The ion implantation layers 190 are formed by
ion-implanting an impurity such as carbon (C), whereby the regions
provided with the ion implantation layers 190 exhibit high
resistance. The ion implantation layers 190 are examples of the
"high resistance region" in the present invention. The remaining
structure of the eighth embodiment is similar to that of the
aforementioned fourth embodiment.
[0161] According to the eighth embodiment, as hereinabove
described, the ion implantation layers 190 having the depth of
about 0.2 .mu.m from the upper surfaces of the n-type current
blocking layers 80 are provided on the regions 8 having
concentrated dislocations so that current hardly flows to the
regions 8 having concentrated dislocations on the upper surfaces of
the n-type current blocking layers 80 due to the ion implantation
layers 190, whereby it is possible to suppress development of
leakage current resulting from current flowing to the regions 8
having concentrated dislocations on the upper surfaces of the
n-type current blocking layers 80. Consequently, optical output can
be easily stabilized when the device is subjected to constant
current driving, whereby operations of the semiconductor device can
be easily stabilized.
[0162] The remaining effects of the eighth embodiment are similar
to those of the aforementioned first embodiment.
[0163] In fabrication processes for the nitride-based semiconductor
laser device according to the eighth embodiment, carbon (C) is
ion-implanted into the regions 8 having concentrated dislocations
on the upper surfaces of the n-type current blocking layers 80 at
an energy of about 40 keV before a step (see FIG. 26) of forming a
p-side ohmic electrode 79 in processes similar to those of the
aforementioned fourth embodiment. Thus, the ion implantation layers
190 having the ion implantation depth (thickness) of about 0.2
.mu.m from the upper surfaces of the n-type current blocking layers
80 and arranged in the regions 8 having concentrated dislocations,
as shown in FIG. 33. The dose for the ion implantation is
preferably set to at least about 1.times.10.sup.14 cm.sup.-2.
Ninth Embodiment
[0164] In a nitride-based semiconductor laser device according to a
ninth embodiment of the present invention, a nitride-based
semiconductor layer including a sapphire substrate is employed as
the substrate for the nitride-based semiconductor laser device
dissimilarly to the aforementioned first to eighth embodiments.
[0165] As shown in FIG. 34, an AlGaN layer 201b having a thickness
of about 20 nm is formed on a sapphire substrate 201a according to
the ninth embodiment. A GaN layer 201c having a thickness of about
1 .mu.m is formed on the AlGaN layer 201b. Longitudinally
propagated dislocations are formed on the overall region of the GaN
layer 201c. A mask layer 201d of SiN or SiO.sub.2 having a
thickness of about 200 nm is formed on a prescribed region of the
GaN layer 201c. This mask layer 201d functions as a selective
growth mask in a fabrication process described later. An undoped
GaN layer 201e having a thickness of about 5 .mu.m is formed on the
GaN layer 201c to cover the mask layer 201d. The sapphire substrate
201a, the AlGaN layer 201b, the GaN layer 201c, the mask layer 201d
and the GaN layer 201e constitute a substrate 201 of the
nitride-based semiconductor laser device according to the ninth
embodiment. The GaN layer 201e constituting the substrate 201 is an
example of the "nitride-based semiconductor substrate" in the
present invention.
[0166] An n-type layer 202 having a thickness of about 100 nm and
consisting of n-type GaN doped with Si having an atomic density of
about 5.times.10.sup.18 cm.sup.-3 is formed on the substrate 201.
An n-type cladding layer 203 having a thickness of about 400 nm and
consisting of n-type Al.sub.0.05Ga.sub.0.95N doped with Si having
an atomic density of about 5.times.10.sup.18 cm.sup.-3 and a
carrier concentration of about 5.times.10.sup.18 cm.sup.-3 is
formed on the n-type layer 202. An emission layer 204 having a
structure similar to that of the emission layer 4 in the first
embodiment shown in FIG. 2 is formed on the n-type cladding layer
203. The n-type layer 202, the n-type cladding layer 203 and the
emission layer 204 are examples of the "semiconductor element
layer" in the present invention.
[0167] A p-type cladding layer 205 having a projecting portion and
consisting of p-type Al.sub.0.05Ga.sub.0.95N doped with Mg having
an atomic density of about 4.times.10.sup.19 cm.sup.-3 and a
carrier concentration of about 5.times.10.sup.17 cm.sup.-3 is
formed on the emission layer 204. The projecting portion of the
p-type cladding layer 205 has a width of about 1.5 .mu.m and a
height of about 300 nm. Flat portions of the p-type cladding layer
205 other than the projecting portion have a thickness of about 100
nm. A p-type contact layer 206 having a thickness of about 10 nm
and consisting of p-type GaN doped with Mg having an atomic density
of about 4.times.10.sup.19 cm.sup.-3 and a carrier concentration of
about 5.times.10.sup.17 cm.sup.-3 is formed on the projecting
portion of the p-type cladding layer 205. The projecting portion of
the p-type cladding layer 205 and the p-type contact layer 206
constitute a striped (elongated) ridge portion 207 extending in a
prescribed direction. The p-type cladding layer 205 and the p-type
contact layer 206 are examples of the "semiconductor element layer"
in the present invention.
[0168] Prescribed regions of the elements from the flat portions of
the p-type cladding layer 205 other than the projecting portion up
to the n-type layer 202 are removed thereby partially exposing the
front surface of the n-type cladding layer 202. A region 208 having
concentrated dislocations extending from the interface between the
GaN layer 201c and the AlGaN layer 201b up to the front surface of
one of the flat portions of the p-type cladding layer 205 other
than the projecting portion is formed in the vicinity of first ends
of the GaN layer 201e constituting the substrate 201 and the
nitride-based semiconductor layers 202 to 205. Another region 208
having concentrated dislocations extending from the interface
between the GaN layer 201c and the AlGaN layer 201b up to the
exposed front surface of the n-type layer 202 is also formed in the
vicinity of second ends of the GaN layer 201e constituting the
substrate 201 and the n-type layer 202.
[0169] A p-side ohmic electrode 209 consisting of a Pt layer having
a thickness of about 5 nm, a Pd layer having a thickness of about
100 nm and an Au layer having a thickness of about 150 nm in
ascending order is formed on the p-type contact layer 206
constituting the ridge portion 207. The p-side ohmic electrode 209
is an example of the "front electrode" in the present
invention.
[0170] According to the ninth embodiment, insulator films 210 of
SiN having a thickness of about 250 nm are formed to expose the
upper surface of the p-side ohmic electrode 209 and a prescribed
region of the exposed front surface of the n-type layer 202 other
than the region 208 having concentrated dislocations. In other
words, the insulator films 210 cover the front surfaces of the p-
and n-side regions 208 having concentrated dislocations.
[0171] A p-side pad electrode 211 consisting of a Ti layer having a
thickness of about 100 nm, a Pd layer having a thickness of about
100 nm and an Au layer having a thickness of about 3 .mu.m in
ascending order is formed on the front surface of the first
insulator film 201 located on the front surface of one of the flat
portions of the p-type cladding layer 205 other than the projecting
portion to be in contact with the upper surface of the p-side ohmic
electrode 209.
[0172] According to the ninth embodiment, further, an n-side
electrode 212 is formed to be in contact with the region of the
exposed front surface of the n-type layer 202 other than the region
208 having concentrated dislocations. This n-side electrode 212
consists of an Al layer having a thickness of about 10 nm, a Pt
layer having a thickness of about 20 nm and an Au layer having a
thickness of about 300 nm in ascending order. The n-side electrode
212 is an example of the "front electrode" in the present
invention.
[0173] According to the ninth embodiment, as hereinabove described,
the second insulator film 210 is formed to expose the prescribed
region of the exposed front surface of the n-type layer 202 other
than the region 208 having concentrated dislocations while the
n-side electrode 212 is formed to be in contact with the region of
the exposed front surface of the n-type layer 202 other than the
region 208 having concentrated dislocations, whereby the second
insulator film 210 covers the region 208 having concentrated
dislocations not to expose the same on the exposed front surface of
the n-type layer 202 and hence it is possible to easily suppress
development of leakage current resulting from current flowing to
the region 208 having concentrated dislocations on the exposed
front surface of the n-type layer 202. Consequently, optical output
can be easily stabilized when the device is subjected to constant
current driving, whereby operations of the semiconductor device can
be easily stabilized. Further, unnecessary emission resulting from
current flowing to the region 280 having concentrated dislocations
can be suppressed.
[0174] Fabrication processes for the nitride-based semiconductor
laser device according to the ninth embodiment are described with
reference to FIGS. 34 to 38.
[0175] First, a process of forming the substrate 201 is described
with reference to FIG. 35. More specifically, the AlGaN layer 201b
having the thickness of about 20 nm is grown on the sapphire
substrate 201a by MOCVD while holding the substrate temperature at
about 600.degree. C., as shown in FIG. 35. Thereafter the substrate
temperature is increased to about 1100.degree. C. for growing the
GaN layer 201c having the thickness of about 1 .mu.m on the AlGaN
layer 201b. At this time, longitudinally propagated dislocations
are formed on the overall region of the GaN layer 201c. Then, the
mask layer 201d of SiN or SiO.sub.2 having the thickness of about
200 nm is formed on the GaN layer 201c by plasma CVD at a
prescribed interval.
[0176] Then, the undoped GaN layer 201e having the thickness of
about 5 .mu.m is laterally grown on the GaN layer 201c by HVPE
through the mask layer 201d serving as a selective growth mask
while holding the substrate temperature at about 1100.degree. C. At
this time, the GaN layer 201e is selectively longitudinally grown
on portions of the GaN layer 201c formed with no mask layer 201d
and thereafter gradually grown in the lateral direction. Therefore,
the regions 208 having concentrated longitudinally propagated
dislocations are formed on the portions of the GaN layer 201e
formed with no mask layer 201d. On the other hand, the GaN layer
201e is laterally grown on the portion of the GaN layer 201e
located on the mask layer 201d thereby laterally bending
dislocations so that longitudinally propagated dislocations are
hardly formed. The sapphire substrate 201a, the AlGaN layer 201b,
the GaN layer 201c, the mask layer 201d and the GaN layer 201e
constitute the substrate 201.
[0177] As shown in FIG. 36, the n-type layer 202, the n-type
cladding layer 203, the emission layer 204, the p-type cladding
layer 205 and the p-type contact layer 206 are successively grown
on the substrate 201 by MOCVD. The striped (elongated) p-side ohmic
electrode 209 is formed on the prescribed region of the p-type
contact layer 206. Thereafter portions of the p-type contact layer
206 and the p-type cladding layer 205 are removed by etching by
thicknesses of about 30 nm from the upper surfaces thereof, thereby
forming the striped (elongated) ridge portion 207 constituted of
the projecting portion of the p-type cladding layer 205 and the
p-type contact layer 206 to extend in the prescribed direction.
[0178] As shown in FIG. 37, prescribed regions from the front
surfaces of the flat portions of the p-type cladding layer 205
other than the projecting portion up to the n-type layer 202 are
removed by etching thereby partially exposing the front surface of
the n-type layer 202.
[0179] Then, an SiN film (not shown) having a thickness of about
250 nm is formed by plasma CVD to cover the overall surface.
Thereafter portions of the SiN film located on the p-side ohmic
electrode 209 and the prescribed region of the exposed front
surface of the n-type layer 202 other than the region 208 having
concentrated dislocations are removed thereby forming the insulator
films 210 as shown in FIG. 38.
[0180] Then, the p-side pad electrode 211 is formed on the front
surface of the first insulator film 210 located on the front
surface of one of the flat portions of the p-type cladding layer
205 other than the projecting portion by vacuum evaporation to be
in contact with the upper surface of the p-side ohmic electrode
209, as shown in FIG. 34. According to the ninth embodiment, the
n-side electrode 212 is thereafter formed on the prescribed region
of the second insulator film 210 located on the exposed front
surface of the n-type layer 202 to be in contact with the region of
the exposed front surface of the n-type layer 202 other than the
region 208 having concentrated dislocations. Finally, scribing
lines (not shown) are formed from the side of the device provided
with the p-side pad electrode 211 and the device is cleaved into
each chip along the scribing lines, thereby forming the
nitride-based semiconductor laser device according to the ninth
embodiment.
Tenth Embodiment
[0181] Referring to FIG. 39, an n-type GaN substrate 221 is
employed as a substrate and the thickness of regions 228 having
concentrated dislocations on an n-type cladding layer 223 is
reduced below that of the remaining region of the n-type cladding
layer 223 other than the regions 228 having concentrated
dislocations in a nitride-based semiconductor laser device
according to a tenth embodiment of the present invention
dissimilarly to the aforementioned first to ninth embodiments.
[0182] In the nitride-based semiconductor laser device according to
the tenth embodiment, an n-type layer 222 having a thickness of
about 100 nm and consisting of n-type GaN doped with Si having an
atomic density of about 5.times.10.sup.18 cm.sup.-3 is formed on
the n-type GaN substrate 221 of about 100 .mu.m in thickness doped
with oxygen having a carrier concentration of about
5.times.10.sup.18 cm.sup.-3, as shown in FIG. 39. The n-type GaN
substrate 221 has a wurtzite structure with a front surface of the
(0001) plane. The n-type cladding layer 223 having a thickness of
about 400 nm and consisting of n-type Al.sub.0.05Ga.sub.0.95N doped
with Si having an atomic density of about 5.times.10.sup.18
cm.sup.-3 and a carrier concentration of about 5.times.10.sup.18
cm.sup.-3 is formed on the n-type layer 222. The regions 228 having
concentrated dislocations, extending from the back surface of the
n-type GaN substrate 221 to the front surface of the n-type
cladding layer 223 with a width of about 10 .mu.m, are formed in
the vicinity of ends of the n-type GaN substrate 221, the n-type
layer 222 and the n-type cladding layer 223 with a period of about
400 .mu.m in a striped (elongated) shape. The n-type GaN substrate
221 is an example of the "substrate" in the present invention, and
the n-type layer 222 and the n-type cladding layer 223 are examples
of the "semiconductor element layer" and the "first semiconductor
layer" in the present invention respectively.
[0183] According to the tenth embodiment, the n-type cladding layer
223 is partially removed up to a prescribed depth from the upper
surface thereof so that the thickness of the regions 228 having
concentrated dislocations on the n-type cladding layer 223 is
smaller than that of the region of the n-type cladding layer 223
other than the regions 228 having concentrated dislocations. An
emission layer 224 having an MQW active layer is formed on the
region of the n-type cladding layer 223 other than the regions 228
having concentrated dislocations. This emission layer 224 consists
of nitride-based semiconductor layers having thicknesses and
compositions similar to those of the layers forming the emission
layer 4 in the first embodiment shown in FIG. 2, and has a width
(about 7.5 .mu.m) smaller than the width of the region of the
n-type cladding layer 223 other than the regions 228 having
concentrated dislocations. The emission layer 224 is an example of
the "semiconductor element layer" in the present invention.
[0184] A p-type cladding layer 225 having a projecting portion and
consisting of p-type Al.sub.0.05Ga.sub.0.95N doped with Mg having
an atomic density of about 4.times.10.sup.19 cm.sup.-3 and a
carrier concentration of about 5.times.10.sup.17 cm.sup.-3 is
formed on the emission layer 224. The projecting portion of this
p-type cladding layer 225 has a width of about 1.5 .mu.m and a
height of about 300 nm from the upper surfaces of flat portions of
the p-type cladding layer 225. The flat portions of the p-type
cladding layer 225 have a thickness of about 100 nm. A p-type
contact layer 226 having a thickness of about 10 nm and consisting
of p-type GaN doped with Mg having an atomic density of about
4.times.10.sup.19 cm.sup.-3 and a carrier concentration of about
5.times.10.sup.17 cm.sup.-3 is formed on the projecting portion of
the p-type cladding layer 225. The projecting portion of the p-type
cladding layer 225 and the p-type contact layer 226 constitute a
striped (elongated) ridge portion 227 extending in a prescribed
direction. The p-type cladding layer 225 and the p-type contact
layer 226 are examples of the "semiconductor element layer" and the
"second semiconductor layer" in the present invention
respectively.
[0185] A p-side ohmic electrode 229 consisting of a Pt layer having
a thickness of about 5 nm, a Pd layer having a thickness of about
100 nm and an Au layer having a thickness of about 150 nm in
ascending order is formed on the p-type contact layer 226
constituting the ridge portion 227. The p-side ohmic electrode 229
is an example of the "front electrode" in the present invention.
Insulator films 230 of SiN having a thickness of about 250 nm are
formed on exposed front surface portions of the n-type cladding
layer 223 and regions of the p-side ohmic electrode 229 other than
the upper surface thereof. A p-side pad electrode 231 consisting of
a Ti layer having a thickness of about 100 nm, a Pd layer having a
thickness of about 100 nm and an Au layer having a thickness of
about 3 .mu.m in ascending order is formed on the front surfaces of
the insulator films 230 to be in contact with the upper surface of
the p-side ohmic electrode 229. An n-side electrode 232 consisting
of an Al layer having a thickness of about 10 nm, a Pt layer having
a thickness of about 20 nm and an Au layer having a thickness of
about 300 nm from the side closer to the back surface of the n-type
GaN substrate 221 is formed on the back surface of the n-type GaN
substrate 221 to be in contact with the overall back surface of the
n-type GaN substrate 221.
[0186] According to the tenth embodiment, as hereinabove described,
the thickness of the regions 228 having concentrated dislocations
on the n-type cladding layer 223 is reduced below that of the
region of the n-type cladding layer 223 other than the regions 228
having concentrated dislocations while the emission layer 224 is
formed on the region of the n-type cladding layer 223 other than
the regions 228 having concentrated dislocations so that no region
228 having concentrated dislocations is formed on the p-n junction
region between the n-type cladding layer 223 and the p-type
cladding layer 225 formed through the emission layer 224, whereby
it is possible to suppress development of leakage current resulting
from current flowing to the regions 228 having concentrated
dislocations. Consequently, optical output can be easily stabilized
when the device is subjected to constant current driving, whereby
operations of the nitride-based semiconductor laser device can be
easily stabilized. Further, the quantity of current flowing to the
regions 228 having concentrated dislocations can be so reduced that
it is possible to reduce unnecessary emission from the regions 228
having concentrated dislocations.
[0187] According to the tenth embodiment, the width of the emission
layer 224 is reduced below that of the region of the n-type
cladding layer 223 other than the regions 228 having concentrated
dislocations for reducing the p-n junction region between the
n-type cladding layer 223 and the p-type cladding layer 225 formed
through the emission layer 224, whereby a p-n junction capacitance
formed by the n-type cladding layer 223 and the p-type cladding
layer 225 can be reduced. Thus, the speed of response of the
nitride-based semiconductor laser device can be increased.
[0188] Fabrication processes for the nitride-based semiconductor
laser device according to the tenth embodiment are now described
with reference to FIGS. 39 to 45.
[0189] As shown in FIG. 40, elements up to the ridge portion 227
constituted of the projecting portion of the p-type cladding layer
225 and the p-type contact layer 226 and the p-side ohmic electrode
229 are formed through fabrication processes similar to those of
the first embodiment shown in FIGS. 3 to 9. Thereafter a resist
film 241 is formed on a prescribed region of the p-type cladding
layer 225 other than the regions 228 having concentrated
dislocations on the flat portions thereof, to cover the front
surfaces of the p-side ohmic electrode 229 and the ridge portion
227.
[0190] As shown in FIG. 41, the resist film 241 is employed as a
mask for etching the upper surfaces of the flat portions of the
p-type cladding layer 225 and the emission layer 224. Thus, the
regions 228 having concentrated dislocations are removed from the
p-type cladding layer 225 and the emission layer 224 while the
widths of the p-type cladding layer 225 and the emission layer 224
are reduced below that of the region of the n-type cladding layer
223 other than the regions 228 having concentrated dislocations.
Thereafter the resist film 241 is removed.
[0191] As shown in FIG. 42, an SiN film (not shown) having a
thickness of about 250 nm is formed by plasma CVD to cover the
overall surface, and a portion of the SiN film located on the upper
surface of the p-side ohmic electrode 229 is removed thereby
forming the insulator films 230 of SiN having the thickness of
about 250 nm.
[0192] As shown in FIG. 43, the p-side pad electrode 231 consisting
of the Ti layer having the thickness of about 100 nm, the Pd layer
having the thickness of about 100 nm and the Au layer having the
thickness of about 3 .mu.m in ascending order is formed on
prescribed regions of the front surfaces of the insulator films 230
by vacuum evaporation to be in contact with the upper surface of
the p-side ohmic electrode 229. The back surface of the n-type GaN
substrate 221 is polished so that the thickness of the n-type GaN
substrate 221 is about 100 .mu.m. Thereafter the n-side electrode
232 consisting of the Al layer having the thickness of about 10 nm,
the Pt layer having the thickness of about 20 nm and the Au layer
having the thickness of about 300 nm from the side closer to the
back surface of the n-type GaN substrate 221 is formed on the back
surface of the n-type GaN substrate 221 by vacuum evaporation to be
in contact with the overall back surface of the n-type GaN
substrate 221.
[0193] As shown in FIG. 44, the regions 228 having concentrated
dislocations are partially removed from the front surface of the
p-side pad electrode 231 up to prescribed depths of the insulator
films 230 and the n-type cladding layer 223 on the boundary between
the nitride-based semiconductor laser device and each adjacent
device by RIE with chlorine. Thus, a trench 233 having a width W2
(about 60 .mu.m, for example) larger than that of the regions 228
having concentrated dislocations is formed on each region 228 of
the device having concentrated dislocations.
[0194] As shown in FIG. 45, a scribing line 234 is formed on the
center of the bottom of each trench 233 with a diamond point.
Thereafter the device is separated into each chip along the
scribing line 234. Thus, the nitride-based semiconductor laser
device according to the tenth embodiment is formed as shown in FIG.
39.
Eleventh Embodiment
[0195] Referring to FIG. 46, an emission layer 224a is identical in
width to an n-type cladding layer 223a in a nitride-based
semiconductor laser device according to an eleventh embodiment of
the present invention dissimilarly to the aforementioned tenth
embodiment. Further, an n-type GaN substrate 221a is partially
removed up to a prescribed depth from the upper surface thereof so
that the thickness of regions 228 having concentrated dislocations
on the n-type GaN substrate 221 is smaller than that of the
remaining region of the n-type GaN substrate 221a other than the
regions 228 having concentrated dislocations. An n-type layer 222a,
the n-type cladding layer 223a, the emission layer 224a, a p-type
cladding layer 225a and a p-type contact layer 226a are
successively formed on the region of the n-type GaN substrate 221
other than the regions 228 having concentrated dislocations.
[0196] Insulator films 260 are formed on flat portions of the
p-type cladding layer 225a and side surfaces of a ridge portion
227a and a p-side ohmic electrode 229a. A p-side pad electrode 261
is formed on the front surfaces of the insulator films 260 to be in
contact with the upper surface of the p-side ohmic electrode 229a.
The n-type GaN substrate 221a, the n-type layer 222a, the n-type
cladding layer 223a, the emission layer 224a, the p-type cladding
layer 225a, the p-type contact layer 226a and the p-side ohmic
electrode 229a have thicknesses and compositions similar to those
of the n-type GaN substrate 221, the n-type layer 222, the n-type
cladding layer 223, the emission layer 224, the p-type cladding
layer 225, the p-type contact layer 226 and the p-side ohmic
electrode 229 in the aforementioned tenth embodiment respectively.
Further, the insulator films 260 and the p-side pad electrode 261
also have thicknesses and compositions similar to those of the
insulator films 230 and the p-side pad electrode 231 in the
aforementioned tenth embodiment respectively.
[0197] The remaining structure of the eleventh embodiment is
similar to that of the aforementioned tenth embodiment.
[0198] According to the eleventh embodiment, as hereinabove
described, the thickness of the regions 228 having concentrated
dislocations on the n-type GaN substrate 221a is reduced below that
of the region of the n-type GaN substrate 221a other than the
regions 228 having concentrated dislocations while the n-type layer
222a, the n-type cladding layer 223a, the emission layer 224a, the
p-type cladding layer 225a and the p-type contact layer 226a are
successively formed on the region of the n-type GaN substrate 221a
other than the regions 228 having concentrated dislocations so that
the p-n junction region between the n-type cladding layer 223a and
the p-type cladding layer 225a formed through the emission layer
224a is formed with no region 228 having concentrated dislocations,
whereby operations of the nitride-based semiconductor laser device
can be easily stabilized and unnecessary emission from the regions
228 having concentrated dislocations can be reduced similarly to
the aforementioned tenth embodiment.
[0199] Fabrication processes for the nitride-based semiconductor
laser device according to the eleventh embodiment are now described
with reference to FIGS. 46 to 48.
[0200] First, the layers and films up to the p-side pad electrode
261 are formed through fabrication processes similar to those of
the first embodiment shown in FIGS. 3 to 11 and the back surface of
the n-type GaN substrate 221a is polished, as shown in FIG. 47.
Thereafter the n-side electrode 232 is formed on the back surface
of the n-type GaN substrate 221a by vacuum evaporation to be in
contact with the overall back surface of the n-type GaN substrate
221a.
[0201] As shown in FIG. 48, irradiation with the third harmonic
(355 nm) of a YAG laser (fundamental: 1.06 .mu.m) on the boundary
between the nitride-based semiconductor laser device and each
adjacent device partially removes the regions 228 having
concentrated dislocations from the front surface of the p-side pad
electrode 261 up to a prescribed depths of the n-type GaN substrate
221a including the insulator films 260, the p-type cladding layer
225a, the emission layer 224a, the n-type cladding layer 223a and
the n-type layer 222a. At this time, the pulse frequency of the YAG
laser is set to about 10 kHz, and the scanning speed is set to
about 0.75 mm/sec. Thus, a trench 263 having a width W3 (about 100
.mu.m, for example) larger than the width of the regions 228 having
concentrated dislocations is formed on each region 228 of the
device having concentrated dislocations. Thereafter the device is
separated into each chip along the trench 263. Thus, the
nitride-based semiconductor laser device according to the eleventh
embodiment is formed as shown in FIG. 46.
[0202] In the fabrication processes according to the eleventh
embodiment, as hereinabove described, the trench 263 for separating
the device into each chip with the YAG laser is so formed that the
width W3 of the trench 263 can be rendered larger than the width of
the regions 228 having concentrated dislocations, whereby the
regions 228 having concentrated dislocations can be easily
partially removed. Thus, no step of partially removing the regions
228 having concentrated dislocations may be added to the step of
forming the trench 263 for separating the device into each chip.
Consequently, fabrication steps can be simplified.
Twelfth Embodiment
[0203] Referring to FIG. 49, an n-type GaN substrate 221b is
partially removed up to a prescribed depth from the upper surface
thereof so that the thickness of regions 228 having concentrated
dislocations is smaller than that of the remaining region of the
n-type GaN substrate 221b other than the regions 228 having
concentrated dislocations in a nitride-based semiconductor laser
device according to a twelfth embodiment of the present invention
dissimilarly to the aforementioned tenth embodiment. An n-type
layer 222b, an n-type cladding layer 223b, an emission layer 224, a
p-type cladding layer 225 and a p-type contact layer 226 are
successively formed on the region of the n-type GaN substrate 221b
other than the regions 228 having concentrated dislocations. The
n-type GaN substrate 221b, the n-type layer 222b and the n-type
cladding layer 223b have thicknesses and compositions similar to
those of the n-type GaN substrate 221, the n-type layer 222 and the
n-type cladding layer 223 in the aforementioned tenth embodiment
respectively. The emission layer 224 and flat portions of the
p-type cladding layer 225 have widths (about 4.5 .mu.m) smaller
than that of the n-type cladding layer 223b.
[0204] The remaining structure of the twelfth embodiment is similar
to that of the aforementioned tenth embodiment.
[0205] According to the twelfth embodiment having the
aforementioned structure, effects similar to those of the
aforementioned tenth embodiment can be attained such that it is
possible to suppress development of leakage current resulting from
current flowing to the regions 228 having concentrated
dislocations.
[0206] Fabrication processes for the nitride-based semiconductor
laser device according to the twelfth embodiment are described with
reference to FIGS. 49 and 50.
[0207] First, layers and films up to an n-side electrode 232 are
formed through fabrication processes similar to those of the tenth
embodiment shown in FIGS. 40 to 43.
[0208] As shown in FIG. 50, the dicing at the boundary between the
nitride-based semiconductor laser device and each adjacent device
partially removes regions 228 having concentrated dislocations from
the front surface of the p-side electrode 231 up to a prescribed
depths of the n-type GaN substrate 221b including the insulator
films 230, the n-type cladding layer 223b and the n-type layer
222b. Thus, a trench 273 having a width W4 (about 60 .mu.m, for
example) larger than that of the regions 228 having concentrated
dislocations is formed on each region 228 of the device having
concentrated dislocations. Thereafter the device is separated into
each chip along the trench 273. Thus, the nitride-based
semiconductor laser device according to the twelfth embodiment is
formed as shown in FIG. 49.
[0209] In the fabrication processes according to the twelfth
embodiment, as hereinabove described, the trench 273 for separating
the device into each chip by dicing is so formed that the width W4
of the trench 273 can be rendered larger than that of the regions
228 having concentrated dislocations, whereby the regions 228
having concentrated dislocations can be easily partially removed
similarly to the fabrication processes according to the
aforementioned eleventh embodiment. Consequently, fabrication steps
can be simplified.
Thirteenth Embodiment
[0210] Referring to FIG. 51, selective growth masks 293 are formed
on regions located inward beyond regions 288 having concentrated
dislocations on an n-type GaN substrate 281 in a nitride-based
semiconductor laser device according to a thirteenth embodiment of
the present invention dissimilarly to the aforementioned tenth to
twelfth embodiments.
[0211] In the nitride-based semiconductor laser device according to
the thirteenth embodiment, the regions 288 having concentrated
dislocations, extending from the back surface to the front surface
of the n-type GaN substrate 281 with a width of about 10 .mu.m, are
formed in the vicinity of ends of the n-type GaN substrate 281 in a
period of about 400 .mu.m in a striped (elongated) shape. The
n-type GaN substrate 281 has a thickness and a composition similar
to those of the n-type GaN substrate 221 in the aforementioned
tenth embodiment. The n-type GaN substrate 281 is an example of the
"substrate" in the present invention.
[0212] According to the thirteenth embodiment, the striped
(elongated) selective growth masks 293 are formed on the regions
located inward beyond the regions 288 having concentrated
dislocations on the n-type GaN substrate 281, as shown in FIG. 52.
The selective growth masks 293 have a width W5 (about 3 .mu.m)
smaller than that of the regions 288 having concentrated
dislocations. The interval W6 between each end of the device and an
end of each selective growth mask 293 is about 30 .mu.m. The
selective growth masks 293 are examples of the "first selective
growth mask" in the present invention.
[0213] As shown in FIG. 51, n-type layers 282, n-type cladding
layers 283, emission layers 284, p-type cladding layers 285 and
p-type contact layers 286 are successively formed on regions of the
n-type GaN substrate 281 other than those formed with the selective
growth masks 293. The central p-type cladding layer 285 has a
projecting portion, and the p-type contact layers 286 are formed on
regions of the p-type cladding layers 285 other than flat portions.
The projecting portion of the central p-type cladding layer 285
located inward beyond the selective growth masks 293 and the
central p-type contact layer 286 formed on the projecting portion
of this p-type cladding layer 285 constitute a ridge portion 287.
Dislocations of the n-type GaN substrate 281 are propagated to the
n-type layers 282, the n-type cladding layers 283, the emission
layers 284, the p-type cladding layers 285 and the p-type contact
layers 286 located outward beyond the selective growth masks 293,
thereby forming the regions 288 having concentrated dislocations.
The n-type layers 282, the n-type cladding layers 283, the emission
layers 284, the p-type cladding layers 285 and the p-type contact
layers 286 have thicknesses and compositions similar to those of
the n-type layer 222, the n-type cladding layer 223, the emission
layer 224, the p-type cladding layer 225 and the p-type contact
layer 226 in the aforementioned tenth embodiment respectively. The
n-type layers 282, the n-type cladding layers 283, the emission
layers 284, the p-type cladding layers 285 and the p-type contact
layers 286 are examples of the "semiconductor element layer" in the
present invention.
[0214] According to the thirteenth embodiment, recess portions 294
are formed between the nitride-based semiconductor layers 282 to
286 located on the region of the n-type GaN substrate 281 located
inward beyond the regions 288 having concentrated dislocations and
the nitride-based semiconductor layers 282 to 286 located on the
regions 288 having concentrated dislocations on the n-type GaN
substrate 281.
[0215] A p-side ohmic electrode 289 is formed on the central p-type
contact layer 286 constituting the ridge portion 287. Insulator
films 290 are formed to cover regions other than the upper surface
of the p-side ohmic electrode 289. A p-side pad electrode 291 is
formed on surface portions of the insulator films 290 located
inward beyond the recess portions 294, to be in contact with the
upper surface of the p-side ohmic electrode 289. The p-side ohmic
electrode 289, the insulator films 290 and the p-side pad electrode
291 have thicknesses and compositions similar to those of the
p-side ohmic electrode 229, the insulator films 230 and the p-side
pad electrode 231 in the aforementioned tenth embodiment
respectively. The p-side ohmic electrode 289 is an example of the
"front electrode" in the present invention.
[0216] An n-side electrode 292 is formed on the back surface of the
n-type GaN substrate 281 to be in contact with the region of the
back surface of the n-type GaN substrate 281 other than the regions
288 having concentrated dislocations. The n-side electrode 292 has
a thickness and a composition similar to those of the n-side
electrode 232 in the aforementioned tenth embodiment.
[0217] According to the thirteenth embodiment, as hereinabove
described, the selective growth masks 293 are formed on the regions
of the n-type GaN substrate 281 located inward beyond the regions
288 having concentrated dislocations so that no nitride-based
semiconductor layers 282 to 286 are grown on the selective growth
masks 293 when the nitride-based semiconductor layers 282 to 286
are grown on the n-type GaN substrate 281, whereby the recess
portions 294 can be formed between the nitride-based semiconductor
layers 282 to 286 formed on the region of the n-type GaN substrate
281 located inward beyond the regions 288 having concentrated
dislocations and the nitride-based semiconductor layers 282 to 286
formed on the regions 288 having concentrated dislocations on the
n-type GaN substrate 281. Therefore, the recess portions 294 can
part the nitride-based semiconductor layers 282 to 286 formed with
the regions 288 having concentrated dislocations and the
nitride-based semiconductor layers 282 to 286 formed with no
regions 288 having concentrated dislocations from each other. Thus,
it is possible to suppress development of leakage current resulting
from current flowing to the regions 288 having concentrated
dislocations by forming the p-side ohmic electrode 289 on the
central p-type contact layer 286 located inward beyond the
selective growth masks 293. Consequently, optical output can be
stabilized when the device is subjected to constant current
driving, whereby operations of the nitride-based semiconductor
layer device can be stabilized. Further, the recess portions 294
part the nitride-based semiconductor layers 282 to 286 formed with
the regions 288 having concentrated dislocations and the
nitride-based semiconductor layers 282 to 286 formed with no
regions 288 having concentrated dislocations from each other so
that the regions 288 having concentrated dislocations can be
inhibited from absorbing light emitted from the central emission
layer 284 located on the region located inward beyond the regions
288 having concentrated dislocations. Thus, light absorbed by the
regions 288 having concentrated dislocations can be inhibited from
reemission at an unintended wavelength, whereby deterioration of
color purity resulting from such reemission can be suppressed.
[0218] Fabrication processes for the nitride-based semiconductor
laser device according to the thirteenth embodiment are described
with reference to FIGS. 51 to 53.
[0219] First, the n-type GaN substrate 281 is formed through
fabrication processes similar to those of the first embodiment
shown in FIGS. 3 to 6, and the striped (elongated) selective growth
masks 293 of SiN having a thickness of about 200 nm are thereafter
formed on prescribed regions of the n-type GaN substrate 281 by
plasma CVD, as shown in FIGS. 52 and 53. More specifically, the
selective growth masks 293 having the width W5 of about 3 .mu.m are
formed on the n-type GaN substrate 281 at an interval W7
(W6.times.2) of about 60 .mu.m to hold the regions 288 having
concentrated dislocations therebetween.
[0220] As shown in FIG. 54, the n-type layers 282, the n-type
cladding layers 283, the emission layers 284, the p-type cladding
layers 285 and the p-type contact layers 286 are successively
formed on the n-type GaN substrate 281 formed with the selective
growth masks 293 by MOCVD.
[0221] According to the thirteenth embodiment, no nitride-based
semiconductor layers 282 to 286 are formed on the selective growth
masks 293 at this time, whereby the recess portions 294 are formed
between the nitride-based semiconductor layers 282 to 286 formed on
the region of the n-type GaN substrate 281 located inward beyond
the regions 288 having concentrated dislocations and the
nitride-based semiconductor layers 282 to 286 formed on the regions
288 having concentrated dislocations on the n-type GaN substrate
281. Further, dislocations of the n-type GaN substrate 281 are
propagated to the nitride-based semiconductor layers 282 to 286
formed on the regions 288 having concentrated dislocations on the
n-type GaN substrate 281, thereby forming the regions 288 having
concentrated dislocations to extend from the back surface of the
n-type GaN substrate 281 to the upper surface of the p-type contact
layer 286.
[0222] As shown in FIG. 55, the p-side ohmic electrode 289 is
formed on the central p-type contact layer 286 located inward
beyond the recess portions 294 while forming the ridge portion 287
constituted of the projecting portion of the central p-type
cladding layer 285 and the central p-type contact layer 286 through
fabrication processes similar to those of the first embodiment
shown in FIGS. 8 to 11. The insulator films 290 are formed to cover
the regions other than the upper surface of the p-side ohmic
electrode 289, and the p-side pad electrode 291 is thereafter
formed on the surface portions of the insulator films 290 located
inward beyond the recess portions 294 to be in contact with the
upper surface of the p-side ohmic electrode 289. Thereafter the
back surface of the n-type GaN substrate 281 is polished.
[0223] Finally, a metal layer (not shown) for constituting the
n-side electrode 292 is formed on the overall back surface of the
n-type GaN substrate 281 by vacuum evaporation, and portions of the
metal layer located on the regions 288 having concentrated
dislocations are removed thereby forming the nitride-based
semiconductor laser device according to the thirteenth embodiment,
as shown in FIG. 51.
[0224] In the fabrication processes according to the thirteenth
embodiment, as hereinabove described, the selective growth masks
293 having the width W5 smaller than that of the regions 288 having
concentrated dislocations are formed on the regions of the n-type
GaN substrate 281 located inward beyond the regions 288 having
concentrated dislocations so as to reduce the total quantity of
source gas reaching the overall surfaces of the selective growth
masks 293, thereby reducing the quantity of the material gas or
decomposites thereof diffusing from the surface of the selective
growth mask 293 into the front surface under the growth of the
nitride-based semiconductor layers 282 to 286 located in the
vicinity of the selective growth masks 293. Thus, amount of
increase of the quantity of the material gas or decomposites
thereof supplied to the front surface under the growth of the
nitride-based semiconductor layers 282 to 286 located in the
vicinity of the selective growth masks 293 can be so reduced that
the atoms constituting the material gas supplied to the front
surfaces of the grown nitride-based semiconductor layers 282 to 286
located in the vicinity of the selective growth masks 293 can be
reduced, whereby the thicknesses of the nitride-based semiconductor
layers 282 to 286 located in the vicinity of the selective growth
masks 293 can be inhibited from increase. Consequently, the
thicknesses of the nitride-based semiconductor layers 282 to 286
can be inhibited from inequality between positions close to and
separated from the selective growth masks 293.
Fourteenth Embodiment
[0225] Referring to FIG. 56, selective growth masks 313a and 313b
of SiN having thicknesses of about 100 nm are formed on regions 288
having concentrated dislocations on an n-type GaN substrate 281 and
regions located inward beyond the regions 288 having concentrated
dislocations in a nitride-based semiconductor laser device
according to a fourteenth embodiment of the present invention,
dissimilarly to the aforementioned thirteenth embodiment. The
selective growth masks 313a have a width W8 (about 188 .mu.m)
larger than that of the regions 288 having concentrated
dislocations. The selective growth masks 313b have a width W9
(about 2 .mu.m) smaller than that of the regions 288 having
concentrated dislocations. These selective growth masks 313b are
arranged at an interval W10 of about 5 .mu.m from the selective
growth masks 313a. The interval W11 between the selective growth
masks 313b is about 10 .mu.m. The selective growth masks 313a are
examples of the "second selective growth mask" in the present
invention, and the selective growth masks 313b are examples of the
"first selective growth mask" in the present invention.
[0226] N-type layers 282a, n-type cladding layers 283a, emission
layers 284a, p-type cladding layers 285a and p-type contact layers
286a are successively formed on regions of the n-type GaN substrate
281 other than those formed with the selective growth masks 313a
and 313b. The central p-type cladding layer 285a has a projecting
portion, while the p-type contact layers 286a are formed on regions
of the p-type cladding layers 285a other than flat portions. The
projecting portion of the central p-type cladding layer 285a
located inward beyond the selective growth masks 313b and the
central p-type contact layer 286a formed on the projecting portion
of this p-type cladding layer 285a constitute a ridge portion 287a.
The emission layers 284a and the flat portions of the central
p-type cladding layer 285a have widths (about 10.5 .mu.m) smaller
than that of the n-type cladding layers 285a.
[0227] According to the fourteenth embodiment, the nitride-based
semiconductor layers 282a to 286a formed on the n-type GaN
substrate 281 are formed with no regions 288 having concentrated
dislocations. Further, recess portions 314 are formed between the
n-type semiconductor layers 282a to 286a located on the regions 288
having concentrated dislocations on the n-type GaN substrate 281
and the nitride-based semiconductor layers 282a to 286a located on
the central portion of the n-type GaN substrate 281.
[0228] A p-side ohmic electrode 289a is formed on the central
p-type contact layer 286a constituting the ridge portion 287a.
Insulator films 310 are formed to cover regions other than the
upper surface of the p-side ohmic electrode 289a. A p-side pad
electrode 311 is formed on prescribed regions of the front surfaces
of the insulator films 310 to be in contact with the upper surface
of the p-side ohmic electrode 289a. An end of the p-side pad
electrode 311 is arranged on the insulator film 310 located on one
region 288 having concentrated dislocations while the other end
thereof is arranged on the insulator film 310 located on one flat
portion of the central p-type cladding layer 285a. The n-type GaN
substrate 281, the n-type layers 282a, the n-type cladding layers
283a, the emission layers 285a, the p-type cladding layers 285a,
the p-type contact layers 286a and the p-side ohmic electrode 289a
have thicknesses and compositions similar to those of the n-type
GaN substrate 221, the n-type layer 222, the n-type cladding layer
223, the emission layer 224, the p-type cladding layer 225, the
p-type contact layer 226 and the p-side ohmic electrode 229 in the
aforementioned tenth embodiment respectively. The insulator films
310 and the p-side pad electrode 311 also have thicknesses and
compositions similar to those of the insulator films 230 and the
p-side pad electrode 231 in the aforementioned tenth embodiment
respectively.
[0229] An n-side electrode 292 is formed on the back surface of the
n-type GaN substrate 281 to be in contact with a region of the back
surface of the n-type GaN substrate 281 other than the regions 288
having concentrated dislocations, similarly to the aforementioned
thirteenth embodiment.
[0230] According to the fourteenth embodiment, as hereinabove
described, the selective growth masks 313a are formed on the
regions 288 having concentrated dislocations on the n-type GaN
substrate 281 so that no nitride-based semiconductor layers 282a to
286a are grown on the selective growth masks 313a when the
nitride-based semiconductor layers 282a to 286a are grown on the
n-type GaN substrate 281, whereby the nitride-based semiconductor
layers 282a to 286a can be inhibited from formation of the regions
288 having concentrated dislocations. Thus, it is possible to
suppress development of leakage current resulting from current
flowing to the regions 288 having concentrated dislocations.
Consequently, optical output can be stabilized when the device is
subjected to constant current driving, whereby operations of the
nitride-based semiconductor laser device can be stabilized.
Further, the quantity of current flowing to the regions 288 having
concentrated dislocations can be so reduced that it is possible to
reduce unnecessary emission from the regions 288 having
concentrated dislocations.
[0231] Fabrication processes for the nitride-based semiconductor
laser device according to the fourteenth embodiment are described
with reference to FIGS. 56 to 60.
[0232] As shown in FIGS. 57 and 58, the n-type GaN substrate 281 is
formed through fabrication processes similar to those of the first
embodiment shown in FIGS. 3 to 6, and the striped (elongated)
selective growth masks 313a and 313b of SiN having the thickness of
about 100 nm are thereafter formed on prescribed regions of the
n-type GaN substrate 281 by plasma CVD. More specifically, the
selective growth masks 313a having a width W12 (W8.times.2) of
about 376 .mu.m are formed on the regions 288 having concentrated
dislocations on the n-type GaN substrate 281. Further, the
selective growth masks 313b having the width W9 of about 2 .mu.m
are formed on the n-type GaN substrate 281 at the interval W10 of
about 5 .mu.m from the selective growth masks 313a. The interval
W11 between the selective growth masks 313b is set to about 10
.mu.m.
[0233] As shown in FIG. 59, the n-type layers 282a, the n-type
cladding layers 283a, the emission layers 284a, the p-type cladding
layers 285a and the p-type contact layers 286a are successively
formed by MOCVD on the n-type GaN substrate 281 formed with the
selective growth masks 313a and 313b.
[0234] At this time, no nitride-based semiconductor layers 282a to
286a are formed on the selective growth masks 313a and 313b in the
fourteenth embodiment. Therefore, the nitride-based semiconductor
layers 282a to 286a are formed with no regions 288 having
concentrated dislocations. Further, the recess portions 314 are
formed between the n-type semiconductor layers 282a to 286a located
on the regions 288 having concentrated dislocations on the n-type
GaN substrate 281 and the nitride-based semiconductor layers 282a
to 286a located on the central portion of the n-type GaN substrate
281.
[0235] As shown in FIG. 60, the p-side ohmic electrode 289a is
formed on the central p-type contact layer 286a located inward
beyond the recess portions 314 while forming the ridge portion 287a
constituted of the projecting portion of the central p-type
cladding layer 285a and the central p-type contact layer 286a
through fabrication processes similar to those of the first
embodiment shown in FIGS. 8 to 11. The insulator films 310 are
formed to cover the regions other than the upper surface of the
p-side ohmic electrode 289a, and the p-side pad electrode 311 is
thereafter formed on the prescribed regions of the front surfaces
of the insulator films 310 to be in contact with the upper surface
of the p-side ohmic electrode 289a. Thereafter the back surface of
the n-type GaN substrate 281 is polished.
[0236] Finally, a metal layer (not shown) for constituting the
n-side electrode 292 is formed on the overall back surface of the
n-type GaN substrate 281 by vacuum evaporation, and portions of the
metal layer located on the regions 288 having concentrated
dislocations are removed thereby forming the nitride-based
semiconductor laser device according to the fourteenth embodiment
as shown in FIG. 56.
[0237] In the fabrication processes according to the fourteenth
embodiment, as hereinabove described, the selective growth masks
313b having the width W9 smaller than that of the regions 288
having concentrated dislocations are formed on the regions located
inward beyond the regions 288 having concentrated dislocations on
the n-type GaN substrate 281 for reducing the total quantity of
material gas reaching the overall front surfaces of the selective
growth masks 313b when growing the nitride-based semiconductor
layers 282a to 286a, thereby reducing the quantity of the material
gas or decomposites thereof surface-diffusing from the front
surfaces of the selective growth masks 313b into the front surfaces
under the growth of the nitride-based semiconductor layers 282a to
286a located in the vicinity of the selective growth masks 313b.
Thus, amount of increase of the quantity of the material gas or the
decomposites thereof supplied to the front surfaces under the
growth of the grown nitride-based semiconductor layers 282a to 286a
located in the vicinity of the selective growth masks 313b can be
so reduced that the nitride-based semiconductor layers 282a to 286a
located in the vicinity of the selective growth masks 313b can be
inhibited from increase of the thicknesses. Consequently, the
thicknesses of the nitride-based semiconductor layers 282a to 286a
can be inhibited from inequality between positions close to and
separated from the selective growth masks 313b.
[0238] A fabrication process for a nitride-based semiconductor
laser device according to a modification of the fourteenth
embodiment is described with reference to FIG. 61.
[0239] In the fabrication process for the nitride-based
semiconductor laser device according to the modification of the
fourteenth embodiment, selective growth masks 323b having a width
w13 (about 3 .mu.m) smaller than that of regions (not shown) having
concentrated dislocations are formed on an n-type GaN substrate 281
to enclose element forming regions 281b, as shown in FIG. 61. At
this time, the selective growth masks 323b are so formed as to
arrange a plurality of openings 323c (the element forming regions
281b) at a prescribed pitch along an element isolation direction
(direction A in FIG. 61) while alternately arranging those of the
openings 323c (the element forming regions 281b) adjacent to each
other in a cleavage direction (direction B in FIG. 61). The width
W14 of the openings 323c (the element forming regions 281b) along
the direction B is set to about 12 .mu.m. Further, selective growth
masks 323a are formed on the overall region at an interval W15 of
about 8 .mu.m from the selective growth masks 313b.
[0240] Thereafter nitride-based semiconductor layers (not shown)
are formed followed by formation of insulator masks (not shown) and
respective electrodes (not shown), similarly to the fabrication
processes for the nitride-based semiconductor laser device
according to the aforementioned fourteenth embodiment.
[0241] In the fabrication process for the nitride-based
semiconductor laser device according to the modification of the
fourteenth embodiment, as hereinabove described, the selective
growth masks 323b having the plurality of openings 323c arranged at
the prescribed pitch along the direction A with alternate
arrangement of those adjacent to each other in the direction B are
formed on the n-type GaN substrate 281 followed by formation of the
nitride-based semiconductor layers on the regions of the n-type GaN
substrate 281 other than those formed with the selective growth
masks 323b so that no nitride-based semiconductor layers are formed
on the selective growth masks 323b, whereby the nitride-based
semiconductor layers are formed only on the regions of the n-type
GaN substrate 281 corresponding to the openings 323c. Thus, the
distances of the nitride-based semiconductor layers formed on the
regions of the n-type GaN substrate 281 corresponding to the
openings 323c in the direction A are smaller than those of
nitride-based semiconductor layers continuously formed on the
n-type GaN substrate 281 in the direction A, whereby cracking can
be suppressed due to the reduction of the distances in the
direction A. In this case, those of the openings 323c (the element
forming regions 281b) adjacent to each other along the direction B
are so alternately arranged that the element forming regions 281b
can be alternately adjacently arranged also in the direction A.
Thus, the element forming regions 281b equivalent to those in a
case of forming nitride-based semiconductor layers on the n-type
GaN substrate 281 continuously in the direction A can be obtained,
whereby the n-type GaN substrate 281 can be inhibited from
reduction of availability while preventing cracking.
Fifteenth Embodiment
[0242] Referring to FIGS. 62 to 64, regions 331a having
concentrated dislocations are partially removed up to an n-type
cladding layer 331 in a nitride-based semiconductor laser device
330 according to a fifteenth embodiment of the present invention
while the nitride-based semiconductor laser device 330 is mounted
in a semiconductor laser, dissimilarly to the aforementioned tenth
to fourteenth embodiments.
[0243] In the nitride-based semiconductor laser device 330
according to the fifteenth embodiment, an n-type layer 332 having a
thickness of about 100 nm and consisting of n-type GaN doped with
Si having an atomic density of about 5.times.10.sup.18 cm.sup.-3 is
formed on an n-type GaN substrate 331 of about 100 .mu.m in
thickness doped with oxygen having a carrier concentration of about
5.times.10.sup.18 cm.sup.-3, as shown in FIG. 63. The n-type GaN
substrate 331 has a wurtzite structure, with a front surface of the
(0001) plane. The regions 331a having concentrated dislocations are
formed in a striped (elongated) shape in the vicinity of both ends
of the n-type GaN substrate 331 and the n-type layer 332 to extend
from the back surface of the n-type GaN substrate 331 up to the
upper surface of the n-type layer 332 with a width of about 10
.mu.m. The n-type GaN substrate 331 is an example of the
"substrate" in the present invention, and the n-type layer 332 is
an example of the "semiconductor element layer" or the "first
semiconductor layer" in the present invention.
[0244] According to the fifteenth embodiment, the n-type cladding
layer 333 having a width D1 (about 7.5 .mu.m) smaller than that of
the n-type GaN substrate 331, an emission layer 334 and a p-type
cladding layer 335 are successively formed on a region of the
n-type layer 332 other than the regions 331a having concentrated
dislocations.
[0245] The n-type cladding layer 333 has a thickness of about 400
nm, and consists of n-type Al.sub.0.05Ga.sub.0.95N doped with Si
having an atomic density of about 5.times.10.sup.18 cm.sup.-3 and a
carrier concentration of about 5.times.10.sup.18 cm.sup.-3. The
n-type cladding layer 333 is an example of the "semiconductor
element layer" or the "first semiconductor layer" in the present
invention.
[0246] As shown in FIG. 64, the emission layer 334 is constituted
of an n-type carrier blocking layer 334a, an n-type light guide
layer 334b, an MQW active layer 334e, an undoped light guide layer
334f and a p-type cap layer 334g. The n-type carrier blocking layer
334a has a thickness of about 5 nm, and consists of n-type
Al.sub.0.1Ga.sub.0.9N doped with Si having an atomic density of
about 5.times.10.sup.18 cm.sup.-3 and a carrier concentration of
about 5.times.10.sup.18 cm.sup.-3. The n-type light guide layer
334b has a thickness of about 100 nm, and consists of n-type GaN
doped with Si having an atomic density of about 5.times.10.sup.18
cm.sup.-3 and a carrier concentration of about 5.times.10.sup.18
cm.sup.-3. The MQW active layer 334e is formed by alternately
stacking four barrier layers 334c of undoped
In.sub.0.05Ga.sub.0.95N each having a thickness of about 20 nm and
three well layers 334d of undoped In.sub.0.15Ga.sub.0.85N each
having a thickness of about 3 nm. The emission layer 334 is an
example of the "semiconductor element layer" in the present
invention, and the MQW active layer 334e is an example of the
"active layer" in the present invention. The undoped light guide
layer 334f has a thickness of about 100 nm and consists of undoped
GaN. The p-type cap layer 334g has a thickness of about 20 nm, and
consists of p-type Al.sub.0.1Ga.sub.0.9N doped with Mg having an
atomic density of about 4.times.10.sup.19 cm.sup.-3 and a carrier
concentration of about 5.times.10.sup.17 cm.sup.-3.
[0247] As shown in FIG. 63, the p-type cladding layer 335 consists
of p-type Al.sub.0.05Ga.sub.0.95N doped with Mg having an atomic
density of about 4.times.10.sup.19 cm.sup.-3 and a carrier
concentration of about 5.times.10.sup.17 cm.sup.-3. This p-type
cladding layer 335 includes a flat portion 335a and a projecting
portion 335b formed to project upward from the center of the flat
portion 335a. The flat portion 335a of the p-type cladding layer
335 has a width D1 (about 7.5 .mu.m) smaller than that of the
aforementioned n-type GaN substrate 331 and identical to that of
the emission layer 334 with a thickness of about 100 nm. The
projecting portion 335b of the p-type cladding layer 335 has a
width W16 (about 1.5 .mu.m) smaller than that of the emission layer
334 and a height of about 30 nm from the upper surface of the flat
portion 335a. The p-type cladding layer 335 is an example of the
"semiconductor element layer" or the "second semiconductor layer"
in the present invention.
[0248] A p-type contact layer 336 having a thickness of about 10 nm
and consisting of p-type GaN doped with Mg having an atomic density
of about 4.times.10.sup.19 cm.sup.-3 and a carrier concentration of
about 5.times.10.sup.17 cm.sup.-3 is formed on the projecting
portion 335b of the p-type cladding layer 335. The projecting
portion 335b of the p-type cladding layer 335 and the p-type
contact layer 336 constitute a striped (elongated) ridge portion
337 defining a current path region. A p-side ohmic electrode 338
constituted of a Pt layer having a thickness of 5 nm, a Pd layer
having a thickness of about 100 nm and an Au layer having a
thickness of about 150 nm in ascending order is formed on the
p-type contact layer 336 constituting the ridge portion 337. The
p-type cladding layer 335 and the p-type contact layer 336 are
examples of the "semiconductor element layer" and the "second
semiconductor layer" in the present invention respectively, and the
p-side ohmic electrode 338 is an example of the "front electrode"
in the present invention. Insulator films 339 of SiN having a
thickness of about 250 nm are formed to cover regions other than
the upper surface of the p-side ohmic electrode 338.
[0249] According to the fifteenth embodiment, a p-side pad
electrode 341 having a width B1 (about 150 .mu.m) smaller than the
width of the n-type GaN substrate 331 is formed on prescribed
regions of the insulator films 339 to be in contact with the upper
surface of the p-side ohmic electrode 338, as shown in FIGS. 62 and
63. This p-side pad electrode 341 is rectangularly formed in plan
view, as shown in FIG. 62. A first end 341a of the p-side pad
electrode 341 is formed on one insulator film 339 located on the
upper surface of the n-type layer 332, to extend toward a region
beyond that on which a first end 334h of the emission layer 334 is
located. A second end 341b of the p-side pad electrode 341 is
formed on the other insulator film 339 located on the side surface
of the n-type cladding layer 333, to extend toward a region beyond
that on which a second end 334i of the emission layer 334 is
located. The first end 341a of the p-side pad electrode 341 is
formed to have a wire-bondable flat surface, while the second end
341b of the p-side pad electrode 341 has no wire-bondable flat
surface. Therefore, the second end 341b of the p-side pad electrode
341 has a smaller distance from the ridge portion 337 as compared
with the first end 341a. The p-side pad electrode 341 is
constituted of a Ti layer having a thickness of about 100 nm, a Pd
layer having a thickness of about 100 nm and an Au layer having a
thickness of about 3 .mu.m in ascending order. A wire 342 is bonded
onto the first end 341a of the p-side pad electrode 341, for
electrically connecting the first end 341a of the p-side pad
electrode 341 with an external device.
[0250] An n-side electrode 343 constituted of an Al layer having a
thickness of about 10 nm, a Pt layer having a thickness of about 20
nm and an Au layer having a thickness of about 300 nm successively
from the side closer to the back surface of the n-type GaN
substrate 331 is formed on a region of the back surface of the
n-type GaN substrate 331 other than the regions 331a having
concentrated dislocations.
[0251] The structure of the semiconductor laser employing the
nitride-based semiconductor laser device 330 according to the
fifteenth embodiment is described with reference to FIGS. 62, 63
and 65.
[0252] As shown in FIG. 65, the semiconductor laser employing the
nitride-based semiconductor laser device 330 according to the
fifteenth embodiment comprises a stem 351 mounted with the
nitride-based semiconductor laser device 330 and a cap 352 for
hermetic sealing. The stem 351 is provided with three leads 351a to
351c, while the leads 351a and 351b project from the upper surface
of the stem 351. A block 353 is provided on the upper surface of
the stem 351, while a submount 354 is provided on the side surface
of the block 353. The nitride-based semiconductor laser device 330
according to the fifteenth embodiment is mounted on the submount
354. More specifically, a cleavage plane of the nitride-based
semiconductor laser device 330 is arranged in parallel with the
upper surface of the stem 351 for emitting a laser beam
perpendicularly to the upper surface of the stem 351. The wire 342
bonded to the first end 341a (see FIGS. 62 and 63) of the p-side
pad electrode 341 constituting the nitride-based semiconductor
laser device 330 is electrically connected with the lead 351a. A
photodetector 355 is mounted on a region of the upper surface of
the stem 351 opposite to the cleavage plane of the nitride-based
semiconductor laser device 330. An end of a wire 356 is bonded to
the photodetector 355, while the other end of the wire 356 is boned
to the lead 351b. The cap 352 is welded to the upper surface of the
stem 351, to cover the nitride-based semiconductor laser device 330
and the photodetector 355.
[0253] According to the fifteenth embodiment, as hereinabove
described, the width D1 (about 7.5 .mu.m) of the emission layer 334
formed on the n-type cladding layer 333 is set smaller than the
width of the n-type GaN substrate 331 while the width of the p-type
cladding layer 335 formed on the emission layer 334 is equalized
with that of the emission layer 334 for reducing a p-n junction
region between the n-type cladding layer 333 and the p-type
cladding layer 335 formed through the emission layer 334, whereby
the p-n junction capacitance can be reduced. Further, the width B1
(about 150 .mu.m) of the p-side pad electrode 341 formed on the
prescribed regions of the insulator films 339 is reduced below the
width of the n-type GaN substrate 331, so that a parasitic
capacitance formed by the p-side pad electrode 341, the insulator
films 339 and the n-type layer 332 can also be reduced.
Consequently, the speed of response of the nitride-based
semiconductor laser device 330 can be increased.
[0254] According to the fifteenth embodiment, further, the first
end 341a of the p-side electrode 341 is formed on the insulator
film 339 located on the upper surface of the n-type layer 332 to
extend toward the region beyond that on which the first end 334h of
the emission layer 334 is located, whereby the first end 341a of
the p-side pad electrode 341 extending beyond the region on which
the first end 334h of the emission layer 334 is located can be
electrically connected with the lead 351a also when the width B1
(about 150 .mu.m) of the p-side pad electrode 341 is smaller than
the width of the n-type GaN substrate 331. Thus, it is not
difficult to connect the p-side pad electrode 341 and the lead 351a
with each other despite the width B1 (about 150 .mu.m) of the
p-side pad electrode 341 smaller than the width of the n-type GaN
substrate 331. Further, the p-type cladding layer 335 formed on the
emission layer 334 is provided with the flat portion 335a so that
the flat portion 335a can suppress excess of lateral optical
confinement also when the p-type cladding layer 335 is provided
with the projecting portion 335b having the width W16 (about 1.5
.mu.m) smaller than the width of the emission layer 334, whereby a
transverse mode can be stabilized. Thus, the nitride-based
semiconductor laser device 330 can be inhibited from reduction of
emission characteristics.
[0255] According to the fifteenth embodiment, in addition, the
n-type cladding layer 333, the emission layer 334 and the p-type
cladding layer 335 are formed on the region of the n-type layer 332
other than the regions 331a having concentrated dislocations so
that the n-type cladding layer 333, the emission layer 334 and the
p-type cladding layer 335 are provided with no regions 331a having
concentrated dislocations, whereby current can be inhibited from
flowing to the regions 331a having concentrated dislocations. Thus,
it is possible to suppress development of leakage current resulting
from current flowing to the regions 331a having concentrated
dislocations. Further, the quantity of current flowing to the
regions 331a having concentrated dislocations can be so suppressed
that it is possible to reduce unnecessary emission from the regions
331a having concentrated dislocations. Thus, operations of the
nitride-based semiconductor laser device 330 can be stabilized.
[0256] Although the present invention has been described and
illustrated in detail, it is clearly understood that the same is by
way of illustration and example only and is not to be taken by way
of limitation, the spirit and scope of the present invention being
limited only by the terms of the appended claims.
[0257] For example, while the present invention is applied to a
nitride-based semiconductor laser device or a light-emitting diode
device as an exemplary semiconductor device in each of the
aforementioned first to fifteenth embodiments, the present
invention is not restricted to this but is also applicable to a
semiconductor device other than the nitride-based semiconductor
laser device or the light-emitting diode device.
[0258] While an n-type GaN substrate or a sapphire substrate
including a nitride-based semiconductor layer is employed as the
substrate in each of the aforementioned first to fifteenth
embodiments, the present invention is not restricted to this but
still another substrate such as a spinel substrate, an Si
substrate, an SiC substrate, a GaAs substrate, a GaP substrate, an
InP substrate, a quartz substrate or a ZrB.sub.2 substrate may
alternatively be employed.
[0259] While the nitride-based semiconductor layers have wurtzite
structures in each of the aforementioned first to fifteenth
embodiments, the present invention is not restricted to this but
the nitride-based semiconductors layer may alternatively have zinc
blende crystal structures.
[0260] While the nitride-based semiconductor layers are grown by
MOCVD in each of the aforementioned first to fifteenth embodiments,
the present invention is not restricted to this but the
nitride-based semiconductor layers may alternatively be grown by
HVPE or gas source MBE (molecular beam epitaxy) employing TMAl,
TMGa, TMIn, NH.sub.3, SiH.sub.4, GeH.sub.4, Cp.sub.2Mg etc. as
material gas.
[0261] While the front surfaces of the nitride-based semiconductor
layers are formed by the (0001) planes in each of the
aforementioned first to fifteenth embodiments, the present
invention is not restricted to this but the nitride-based
semiconductor layers may alternatively be stacked so that the front
surfaces thereof are oriented in another direction. For example,
the nitride-based semiconductor layers may be so stacked that the
front surfaces are formed by (H, K, -H-K, 0) planes such as (1-100)
planes of (11-20) planes. In this case, no piezoelectric field is
generated in the MQW active layer so that recombination probability
of holes and electrons can be inhibited from reduction resulting
from inclination of the energy bands in the well layers.
Consequently, the luminous efficiency of the MQW active layer can
be improved. Further alternatively, the substrate may alternatively
be inclined from the (1-100) plane or the (11-20) plane.
[0262] While the active layer has the MQW structure in each of the
aforementioned first to fifteenth embodiments, the present
invention is not restricted to this but a similar effect can be
attained with a thick single-layered active layer having no quantum
effect or an active layer having a single quantum well
structure.
[0263] While the substrate is formed with the regions having
concentrated dislocations in a striped shape in each of the
aforementioned first to fifteenth embodiments, the present
invention is not restricted to this but the substrate may
alternatively be formed with regions having concentrated
dislocations in a shape other than a striped shape. For example,
the masks 24 may be replaced with masks interspersed with openings
in the form of a triangular grid in FIG. 4, thereby forming a
substrate interspersed with regions having concentrated
dislocations in the form of a triangular grid. In this case, a
similar effect can be attained by forming interspersal insulator
films or interspersal high resistance regions in correspondence to
the interspersal regions having concentrated dislocations. A
similar effect can also be attained by forming recess portions to
enclose the interspersal regions having concentrated
dislocations.
[0264] While the n-type GaN substrate is formed by growing the
n-type GaN layer on the sapphire substrate in each of the
aforementioned first to eighth and tenth to fifteenth embodiments,
the present invention is not restricted to this but the n-type GaN
substrate may alternatively formed by growing an n-type GaN layer
on a GaAs substrate. More specifically, an n-type GaN layer of
about 120 .mu.m to about 400 .mu.m in thickness doped with oxygen
is formed on a GaAs substrate by HVPE and the GaAs substrate is
thereafter removed thereby forming the n-type GaN substrate. At
this time, the n-type GaN substrate is preferably so formed that a
carrier concentration according to Hall effect measurement is about
5.times.10.sup.18 cm.sup.-3 and an impurity concentration according
to SIMS (secondary ion mass spectroscopy) is about
1.times.10.sup.19 cm.sup.-3. Further alternatively, a selective
growth mask layer may be formed on a prescribed region of the GaAs
substrate, thereby laterally growing the n-type GaN layer.
[0265] While the ridge portion is formed on a substantially central
portion between the regions having concentrated dislocations in
each of the aforementioned first, second, fourth, sixth to ninth
and tenth to fifteenth embodiments, the present invention is not
restricted to this but the ridge portion may alternatively be
formed on a position of about 150 .mu.m from a first end and about
250 .mu.m from a second end. In this case, a nitride-based
semiconductor located on a region deviating from the central
portion between the regions having concentrated dislocations is
superior in crystallinity to a nitride-based semiconductor located
substantially at the central portion between the regions having
concentrated dislocations, whereby the life of the nitride-based
semiconductor laser device can be improved.
[0266] While the ohmic transparent electrode is formed on the n
side in each of the aforementioned third and fifth embodiments, the
present invention is not restricted to this but the ohmic
transparent electrode may alternatively be formed on the p
side.
* * * * *