U.S. patent application number 13/180948 was filed with the patent office on 2012-01-12 for single mode photonic circuit architecture and a new optical splitter design based on parallel waveguide mode conversion.
Invention is credited to Bing Li.
Application Number | 20120008897 13/180948 |
Document ID | / |
Family ID | 38876739 |
Filed Date | 2012-01-12 |
United States Patent
Application |
20120008897 |
Kind Code |
A1 |
Li; Bing |
January 12, 2012 |
Single Mode Photonic Circuit Architecture and a New Optical
Splitter Design Based on Parallel Waveguide Mode Conversion
Abstract
The new single mode circuit (SMC) architecture is invented for
photonic integrated circuits (PIC). This architecture allows using
multimode waveguides or structures to construct a single mode
operated PIC. The multimode sections used in such SMC based PIC
possess strong lateral confinement so that the PIC can have high
circuit density and high optical performance at the same time. A
parallel mode converter structure is also invented here. Based on
this parallel mode converter, a low loss optical splitter can be
constructed for high index contrast waveguide system.
Inventors: |
Li; Bing; (Bothell,
WA) |
Family ID: |
38876739 |
Appl. No.: |
13/180948 |
Filed: |
July 12, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12686227 |
Jan 12, 2010 |
7978941 |
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13180948 |
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11757394 |
Jun 4, 2007 |
7668416 |
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12686227 |
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60810865 |
Jun 5, 2006 |
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Current U.S.
Class: |
385/14 |
Current CPC
Class: |
G02B 6/14 20130101; G02B
6/30 20130101; G02B 6/1223 20130101; G02B 2006/12195 20130101; B82Y
20/00 20130101 |
Class at
Publication: |
385/14 |
International
Class: |
G02B 6/12 20060101
G02B006/12 |
Claims
1. Single mode photonic circuit architecture for planar lightwave
circuits, the said single mode photonic circuit architecture uses
multiple pairs of multimode waveguide section and mode filter; the
said multimode waveguide is the ridge waveguide with the lateral
index contrast greater than the single mode ridge waveguide at the
same material system, so that small bend radius can be used; the
said ridge waveguide with larger lateral index contrast is realized
by deep etch into the silicon in a silicon-on-insulator system.
2. The single mode photonic circuit architecture for planar
lightwave circuits recited in claim 1 wherein multiple pairs of
multimode waveguide section and mode filter are connected in series
or in parallel.
3. The single mode photonic circuit architecture recited in claim 2
wherein the mode filter structure is the combination of the
waveguide lens and waveguide pin hole, the said waveguide pin hole
removes the potential high order mode excitement at the waveguide
lens section to ensure the single mode operation of the following
planar lightwave circuits.
4. The single mode photonic circuit architecture recited in claim 1
wherein the mode filter structure is the combination of the
waveguide lens and waveguide pin hole, the said waveguide pin hole
removes the potential high order mode excitement at the waveguide
lens section to ensure the single mode operation of the following
planar lightwave circuits.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit and is a Continuation of
U.S. Application Ser. No. 12/686,227, filed Jan. 12, 2010, which is
a Divisional of U.S. application Ser. No. 11/757,394, filed Jun. 4,
2007, which claims the benefit of U.S. Provisional Application No.
60/810,865, filed Jun. 5, 2006, the entire contents of which are
hereby incorporated herein by reference.
BACKGROUND OF THE INVENTION
[0002] In the past, photonic integrated circuits (PIC), which is
also called planar lightwave circuits (PLC) or optical integrated
circuits (OIC), are designed using single mode optical waveguide
structures. The reasons of using single mode waveguide is to ensure
that the whole circuits is within the single mode operation region,
therefore, no high order modes will be excited both within the
circuits and at the interface of the coupling to the outside world,
usually to optical single mode fiber. If the waveguide is not
single mode, when the higher order modes are excited, multiple
guiding modes will propagate together along the waveguides and each
mode carries part of signal power. As the result of the multimode
propagation, the signal will suffer significant mode dispersion and
random coupling among the modes when discontinuity or structure
change occurs. The coupling from the PIC to the end single mode
fiber will have large and random loss, making the device not usable
in the system.
[0003] However, the single mode operation condition of the
waveguide is, some time, too restrictive. It will also create
problems for the coupling and the achievable circuit density of
PICs. A typical example is the silicon-on-insulator (SOI) optical
waveguide as shown in FIG. 1. [0004] <11>: Ridge waveguide
cross section; [0005] <12>: The substrate of the ridge
waveguide (bottom cladding); [0006] <13>: Ridge waveguide
core; [0007] <14>: The ridge; [0008] <15>: Slab region
of the ridge waveguide; [0009] <16>: Top cladding of the
ridge waveguide; [0010] <17>: The layer structure of the
starting SOI wafer; [0011] <18>: The silicon layer of the
starting SOI wafer;
[0012] Due to the strong material index contrast between the core
<13> and the cladding (substrate) in SOI (n.sub.f=3.48 vs.
n.sub.c(f)=1.44.about.1.8), for large dimension comparable with the
regular single mode fiber, the single mode condition must be
maintained by the weaker lateral effective index contrast, which is
between the slab mode effective indices of the region I and II
<15>. The slab region itself, both I and II, are multimode,
but the lateral effective index contrast is so weak that all the
high order vertical mode of slab region I can not propagate without
radiation into the region II.
[0013] Since the vertical index contrast in SOI structure is much
stronger than other material systems, such as silica (SiO.sub.2)
and polymer, the SOI waveguide usually ends up have weaker lateral
index contrast than silica and polymer based waveguide. It makes
the SOI waveguide PIC with large cross section has to have larger
bending radius, which results in low circuit density. To achieve a
similar bending radius as silica waveguide, the waveguide dimension
must be reduced to about half of the single mode fibers, which
causes severe problem in coupling. A 3D on-chip taper usually must
be used to reduce the coupling loss.
[0014] Another problem with SOI based PIC is the splitter junction
loss. A typical excess loss of a SOI based waveguide splitter due
to the splitter junction is usually .about.1 dB, while the silica
based waveguide splitter has only less than 0.5 dB. The larger
junction loss is because the high-index contrast between the
silicon dioxide (cladding) and the silicon (waveguide core), and
the ridge structure itself. When the mode hits the junction, a
significant scattering will occur and the field gets an abrupt
disturbance. An example is demonstrated in FIG. 2, a 1.times.2
splitter junction <21>.
BRIEF SUMMARY OF THE INVENTION
[0015] There are two structures are invented here to solve the
problem faced by the SOI PIC, and any other high index material
system: the conflict between the density of the circuit and its
performance. The first invented structure, or architecture, or
design method, is the single mode photonic circuit (SMC) in which
multimode waveguide can be used. Without the constraint of single
mode waveguide condition, the multimode waveguides used in the SMC
have both high lateral index contrast and therefore the PIC can
have small bend radius, resulting in high density of the photonic
circuit, and the high optical performance at the same time. Also,
the thick silicon layer <18> can be used, to make the PIC
easy to be coupled with standard single mode fiber.
[0016] The second invented structure is a parallel mode converter
that can be used to construct a low loss optical splitter in any
splitting ratio. With the parallel mode converter, the lightwave
splitting is realized during the mode conversion between the input
single channel waveguide mode and the super modes of the output
multiple parallel-coupled channel waveguide. By eliminating the
scattering caused by the oxide between the channels, the optical
splitter can have the excess loss as low as those based on regular
low index contrast material system.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] FIG. 1 shows embodiments of traditional silicon-on-insulator
optical waveguides.
[0018] FIG. 2 shows an embodiment of a traditional optical
splitter.
[0019] FIG. 3 shows an embodiment of a single mode photonic circuit
using a single mode waveguide and an embodiment of a single mode
photonic circuit using a multi-mode waveguide.
[0020] FIG. 4 shows a block diagram for an embodiment of single
mode photonic integrated circuits using multimode waveguides.
[0021] FIG. 5 shows an embodiment of a waveguide lens pinhole
structure.
[0022] FIG. 6 shows an embodiment of a mode filter.
[0023] FIG. 7 shows an embodiment of an optical waveguide mode
converter.
[0024] FIG. 8 shows another embodiment of an optical waveguide mode
converter.
[0025] FIG. 9 shows an embodiment of a parallel mode converter.
[0026] FIG. 10 shows a waveguide cross-section at one end of an
embodiment of an optical waveguide mode converter and the guiding
mode profile for the waveguide at that end.
[0027] FIG. 11 shows a waveguide cross-section at one end of an
embodiment of a parallel mode converter and its supermode's mode
profile at that end.
[0028] FIG. 12 shows a wave concentration diagram for an embodiment
of a multi-ridge waveguide.
[0029] FIG. 13 shows an embodiment of a parallel mode converter and
wave concentration diagrams on either end of the parallel mode
converter.
[0030] FIG. 14 shows another embodiment of a parallel mode
converter.
DETAIL DESCRIPTION OF THE INVENTION
[0031] Single Mode Photonic Circuits (SMC) Architecture
[0032] The first invented structure, or architecture, or a design
approach, is the single mode photonic circuits (SMC) in which the
multimode waveguide can be used. As we mentioned before, the whole
PIC must be maintained as single mode operation, but it doesn't
have to be achieved by the single mode waveguide. The idea is a new
concept: single mode at system (circuit) level. As long as the
whole circuit can only operate at one mode, the individual section
can be constructed by multimode waveguides. A mode filter will be
inserted after the multimode section. If designed correctly, the
high order modes will not be excited in those multimode sections,
and even they are, the mode filter will remove those high order
components and keep the whole system at the single mode. In the
ideal case, the high order mode excitation will never occur after
the mode filter of the fiber-to-PIC coupling interface since only
the main guiding mode is excited and shall be maintained as long as
the continuity of the waveguide is ensured. In practice, the
coupling to the high order mode from the excited main guiding mode
may occur due to the imperfectness of the waveguide, such as the
rough side wall. The excited high order modes will be removed by
the mode filter following the multimode waveguide section; and the
power loss due to this removal is equivalent to the power loss due
to the scattering loss in regular single mode waveguide based PICs,
since such scattering loss is nothing but the mode coupling from
the guiding mode to the radiation mode in regular single mode
waveguide.
[0033] The principle of the SMC is shown in FIG. 3, which explains
the reason why the PIC based on the SMC architecture is equivalent
to the PIC based on purely single mode waveguide. In FIG. 3: [0034]
<31>: PIC based on single mode waveguide from end to end;
[0035] <32>: PIC based SMC architecture in which multimode
waveguides are used; [0036] <33>: The single mode fiber at
the input side of the PIC; [0037] <34>: The single mode fiber
at the output side of the PIN;
[0038] Expression (2a) and (2b) are the insertion loss caused by
the coupling, in the case of <31> and <32>
respectively. In (2a), .PHI..sub.Fis the fiber mode, .PSI..sub.SMW
is the fundamental guiding mode of the single mode waveguide,
.PSI..sub.R.sup.k is the radiation modes of the single mode
waveguide, and .eta..sub.R.sup.k is the transmission coefficient of
each radiation mode. In principle, when the single mode waveguide
length long enough, .eta..sub.R.sup.k=0 for all k. One should
notice that in (2a), the radiation modes are discrete, which is an
approximate expression of the continuous radiation mode spectrum of
the single mode waveguide. In (2b), .PSI..sub.MMW.sub.0 is the
fundamental guiding mode of the multimode waveguide, .PSI..sub.MMW
and .eta..sub.MMW.sup.k are the high order mode of the multimode
waveguide and its transmission coefficient. We find that once the
radiation mode of the single mode waveguide is included, the
expression (2a) and (2b) are very similar. Mathematically, the only
difference between single mode waveguide and multimode waveguide
PIC is that the .eta..sub.R.sup.k equals zero naturally, while
.eta..sub.MMW.sup.k is not equal to zero usually, unless that we
force it. By forcing .eta..sub.MMW.sup.k=0, a multimode waveguide
PIC <32> can function as a single mode system.
.alpha. SMW = .PHI. F .PSI. _ SMW 2 + .PHI. _ F k .PHI. F .PSI. _ R
k .PSI. R k .eta. R k ( 2 a ) .alpha. SMC = .PHI. F .PSI. _ MMW _ 0
2 + .PHI. _ F k .PHI. F .PSI. _ MMW k .PSI. MMW k .eta. MMW k ( 2 b
) ##EQU00001##
[0039] The way of forcing 72 .sub.MMW.sup.k=0 is to add a mode
filter after the multimode sections (MWS). In general, a PIC using
SMC structure can be described as a block diagram as in FIG. 4. In
the FIG. 4, the left is the input side, and the right is output
side. The first multimode section (MWS1) is usually designed to
increasing the coupling efficiency (better mode match with the
input fiber or other source devices). The mode filter 1 follows the
MWS1 to depress all the possible high order mode excitements at the
coupling interface. Please note this high order mode depression
will not cause any extra loss for the PIC, because all the high
order mode excitement result from the mode mismatch between input
fiber mode and the fundamental mode of the MWS1. This part of loss
is the same as in the case of the single mode waveguide PIC, in
which the mode mismatch part will excite the radiation modes. After
mode filter 1, the MWS2 is possible for the bending purpose or mode
conversion purpose. In principle, SMC architecture can have mode
filter after every MWS, but in practical, it is not necessary to do
that, after the mode filter 1, if the following MWS sections are
ideal and not high order mode will be excited due to the
imperfectness of the waveguide, the mode filter 2 or other mode
filters can be skipped. In the real design, the excitement of the
high order mode is inevitable; the mode filter must be added in the
sensitive part of the SMC based PIC to avoid the failure of the
device functions. However, all these mode filters will not affect
the device performance since it simply depress the high order mode
excitement corresponding to the radiation mode excitement in the
single mode waveguide PIC.
[0040] To make the description clear, we give several SMC
examples.
[0041] FIG. 5 is a waveguide lens-pinhole structure that is very
similar with that people has used in traditional free space optics.
In FIG. 5: [0042] <51>: Waveguide lens-pinhole PIC, in which
the waveguide pinhole is the mode filter. This PIC usually is a
portion of the bigger PIC in which it works as a input section to
couple with outside fiber; [0043] <52>: The waveguide lens
formed by etching on the edge of the PIC; [0044] <53>:
Waveguide pinhole;
[0045] The input beam, from single mode fiber for instance, is
focused by the edge waveguide lens <52>, and then propagates
through a slab waveguide region, which can be regarded as an
infinite multimode channel waveguide. A pin-hole filter <53>
after the slab waveguide region will remove any multimode
components excited by displacement of input beam on incident angle
and the position. Although in this example, the mode filter only
works for the high order mode on lateral axis, not for the high
order mode on vertical axis.
[0046] FIG. 6 is a mode filter design example using weak-guided
single mode waveguide structure, in the figure: [0047] <61>:
Weak Guiding Single Mode Waveguide mode filter; [0048] <62>:
Ridge of the strong confined multimode ridge waveguide at input
side; [0049] <63>: Deep etched are with silicon-dioxide (or
other low index dielectric) filled; [0050] <64>: Shallow
etched area with silicon-dioxide (or other low index dielectric)
filled; [0051] <65>: Weak guiding single mode waveguide
section; [0052] <66>: Taper section for mode conversion
between weak guiding section and the multimode section; [0053]
<67>: Ridge of the strong confined multimode ridge waveguide
at output side;
[0054] Necessary taper structure <66> is used for the
transition between multimode waveguide section (MWS) to the weak
guiding single mode waveguide section. In the particular
application like SOI waveguide based PIC, the multimode waveguide
with large cross section and deeper etch has better mode matching
with the regular single mode fiber. So this structure can be used
to reduce the coupling loss while the SMC structure maintains the
single mode operation of the whole circuits.
[0055] FIG. 7 is the example of an abnormal 3D mode size converter
design, which has actually been used in the mode filter example in
FIG. 6. In FIG. 7: [0056] <71>: After etching, the remaining
silicon surrounded by silicon-dioxide or other low index
dielectric; [0057] <72>: The input facet of the PIC; [0058]
<73>: The fundamental mode profile of the waveguide at the
input facet; [0059] <74>: The low-level silicon slab, formed
by deep etching; [0060] <75>: The high-level silicon slab,
formed by shallow etching; [0061] <76>: The shoulder of the
shallow etched ridge waveguide; [0062] <77>: The output
facet; [0063] <78>: The fundamental mode profile of the
waveguide at the output facet; [0064] <79>: The abnormal mode
converter;
[0065] The interface end to the fiber is a deep etch ridge
waveguide that has almost circular mode profile, a perfect match
with the guiding mode of regular optical fiber. The deep etch ridge
waveguide is multimode waveguide in nature, then into the chip, the
waveguide transfer into a shallow etched waveguide with a shoulder
structure on both side. Different from the mode size converter
design in prior art, in our abnormal mode converter, the shallow
ridge etch tapered in (narrower and narrower) or not tapering at
all, and the shoulder tapered out (wider and wider). The deep etch
can potentially go all the way to the bottom of the original
silicon slab of the SOI wafer (stop at the buried oxide layer), in
such case, the low-level slab <74> has 0 thickness.
[0066] FIG. 8 is a structure where a deep etched waveguide with
strong lateral confinement, which although it is a multimode
waveguide, can be used to reduce the bending radius, therefore
improve the overall circuit density. In FIG. 8: [0067] <81>:
the starting silicon slab of the SOI wafer; [0068] <82>: the
ridge (waveguide) formed by shallow etch; [0069] <83>: the
ridge (waveguide) formed by deep etch;
[0070] The structure in FIG. 8 can follow the structure in FIG. 6
in the real design of the SMC based PIC.
[0071] Parallel Mode Converter for Low Loss Optical Splitter
PIC
[0072] Another structure invented here is a parallel mode
conversion structure used for waveguide optical splitter, or other
similar devices. As we mentioned before, the SOI waveguide splitter
suffers significant junction loss due to the scattering caused by
the low index material between two adjacent waveguides (FIG. 2).
The invented parallel mode conversion device is shown in FIG. 9.
This structure can help to almost eliminate the scattering loss and
split the incident power with any desired distribution. In FIG. 9:
[0073] <91>: the area circled by the shallow etch outline, in
which the shallow etch will not be applied; [0074] <92>: the
slab waveguide free space region, formed by applying shallow etch
in the area circled by deep etch outline (where deep etch was not
applied); [0075] <93>: the area where the deep etch was
applied. This area will be covered by the silicon-dioxide or other
low index dielectrics in the following process step; [0076]
<94>: after the splitting, the optical mode profile of one of
the optical channels; [0077] <95>: the single channel mode
converter (mode converter 1), which pushes the light down to the
high-level silicon slab and let the light completely confined by
the high level slab <75>; [0078] <96>: the waveguide
for input coupling, which is multimode and designed for coupling
efficiency.
[0079] The waveguide splitter shown in FIG. 9 has two etch steps
(mask layers). The first step (deep etch) creates the ridge
waveguide to reduce the coupling loss (as explained earlier in
paragraph [013]). The second etch layer is a shallow etch comparing
to the first step, and it creates the single mode waveguide needed
by the mode filter. The mode converter 1 is a taper structure in
which the width of ridge created by the second step (shallow etch)
gradually gets narrower until the minimum feature size allowed,
while the width of the first-etch-created ridge is kept the same.
The mode converter will push the light down, and at the end of the
converter, the mode will be something like <102> in FIG. 10.
In FIG. 10: [0080] <101>: the oxide or other low index
dielectric deposited on top of silicon after all the etching steps;
[0081] <102>: the mode profile of the waveguide at the end of
mode converter <95>;
[0082] In FIG. 10, we define two physical layers: (1) the sub
layer, between the surface created by the second (shallow) etch and
the bottom of silicon slab; (2) the top layer, between the top
surface of the silicon slab and the surface created by the second
(shallow) etching. The sub layer is the same as the high-level slab
<75> defined in FIG. 7. In the splitter structure of FIG. 9,
the light was pushed down by the mode converter <95> and
mainly confined inside the sub layer. Then it propagates into the
sub-layer free space region (a slab waveguide region form by sub
layer without lateral confinement). Inside the sub-layer free space
region, the light propagates as a circular wave (Gaussian beam)
until it reaches the parallel mode converter.
[0083] An example of the cross-section of the parallel mode
converter is shown in FIG. 11, in the figure: [0084] <111>:
top cladding of the waveguide, for example, the TEOS (oxide) in
SOI-CMOS; [0085] <112>: mode profile of the supermode of the
parallel coupled waveguide at this location; [0086] <113>:
waveguide ridge of the channels, formed by the shallow etch;
[0087] It is at the starting point that is facing the sub-layer
free space region <92>. Because the ridge created by the
second etch is narrow, at the starting point facing the free space,
the mode is mainly confined in the sub layer, which provides the
best match with the field pattern coming from the sub-layer free
space region. That is the fundamental reason why this parallel mode
converter structure can almost eliminate the scattering loss that
exists in the traditional splitter junctions.
[0088] In the parallel mode converter, after the starting point,
the ridge width of top layer will become wider and wider. The light
will then gradually move back into the top layer and be more and
more confined laterally. At the end of the mode converter away from
the sub-layer free space region <92>, the light will be split
and separated into each individual waveguide, as shown in FIG. 12,
in the figure: [0089] <121>: the waveguide ridge of one of
the separated channels.
[0090] The parallel mode converter can also be regarded as a
parallel reverse taper. In traditional waveguide splitters, a
parallel normal taper is used to bring the light from the free
space region to individual waveguides. Parallel reverse taper
achieve the same function as the parallel normal taper, but with
the smallest possible scattering loss. In traditional splitters,
along the aperture (the interface between free space and the
starting point of the parallel taper), the width of the waveguide
increases from the center channel to the edge channel. The gap
between waveguides is the minimum. At the starting point, the mode
is wide and superposition of the modes of all the waveguides has
the optimized matching with the overall field pattern along the
aperture of the free space region. Then the taper converts the wide
mode at the starting point to the strong confined guiding mode of
the single mode waveguide. The reverse taper not only has wide mode
at the starting point, but also has the mode most confined in the
sub layer, therefore, no scattering loss caused by the low index
material in the gap region.
[0091] FIG. 13 shows, from the starting point to the ending point,
how the optical field along the parallel mode converter is
converted from a Gaussian type of supermode that mainly confined in
the sub-layer, to an individual confined parallel multi-channel
supermode. <131> is a 3D illustration of parallel reverse
mode converter for waveguide splitter.
[0092] FIG. 14 gives another possible variation of the parallel
mode converter based splitter structure, in the figure: [0093]
<141>: the starting points of the each individual channels at
the parallel mode converter; [0094] <142>: the lateral free
propagation region, the vertical confined provided by the sub-layer
slab formed by the shallow etch;
[0095] The main difference between the structure in FIG. 14 and the
structure in FIG. 9 is the starting points of the each channels at
the parallel mode converter is not aligned with the wave front of
the cylinder wave from the lateral free propagation region
<142><92>: the channels closer to the center will start
later, so that, the edge channels can absorb the light from the
sub-layer earlier, to compensate the position of the channels of
being on the edge, to eventually make sure the uniform power
distributions among the channels at the end of the mode
converter.
* * * * *