U.S. patent application number 13/167850 was filed with the patent office on 2011-10-20 for semiconductor device and a method of manufacturing the same.
Invention is credited to Makoto Hatori, Yutaka Hoshino, Tomoyuki MIYAKE, Masatoshi Morikawa.
Application Number | 20110254087 13/167850 |
Document ID | / |
Family ID | 34225153 |
Filed Date | 2011-10-20 |
United States Patent
Application |
20110254087 |
Kind Code |
A1 |
MIYAKE; Tomoyuki ; et
al. |
October 20, 2011 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
Abstract
To reduce the size and improve the power added efficiency of an
RF power module having an amplifier element composed of a silicon
power MOSFET, the on resistance and feedback capacitance, which
were conventionally in a trade-off relationship, are reduced
simultaneously by forming the structure of an offset drain region
existing between a gate electrode and an n.sup.+ type drain region
of the power MOSFET into a double offset one. More specifically,
this is accomplished by adjusting the impurity concentration of an
n.sup.- type offset drain region, which is closest to the gate
electrode, to be relatively low and adjusting the impurity
concentration of an n type offset drain region, which is distant
from the gate electrode, to be relatively high.
Inventors: |
MIYAKE; Tomoyuki;
(Higashimurayama, JP) ; Morikawa; Masatoshi;
(Hanno, JP) ; Hoshino; Yutaka; (Akishima, JP)
; Hatori; Makoto; (Fussa, JP) |
Family ID: |
34225153 |
Appl. No.: |
13/167850 |
Filed: |
June 24, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12823453 |
Jun 25, 2010 |
7994567 |
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13167850 |
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11645577 |
Dec 27, 2006 |
7791131 |
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12823453 |
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10902130 |
Jul 30, 2004 |
7176520 |
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11645577 |
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Current U.S.
Class: |
257/337 ;
257/328; 257/E29.062 |
Current CPC
Class: |
H01L 21/823425 20130101;
H01L 2224/48091 20130101; H01L 23/66 20130101; H01L 2924/19041
20130101; H01L 29/41758 20130101; H01L 2224/48227 20130101; H01L
29/66659 20130101; H01L 24/48 20130101; H01L 2924/1305 20130101;
H01L 27/0629 20130101; H01L 2924/1305 20130101; H01L 2924/3011
20130101; H01L 2924/01079 20130101; H01L 29/0878 20130101; H01L
23/3677 20130101; H01L 2224/48091 20130101; H01L 27/088 20130101;
H01L 2924/19105 20130101; H01L 29/0847 20130101; H01L 2924/13091
20130101; H01L 29/4175 20130101; H01L 2224/45144 20130101; H01L
29/7835 20130101; H01L 2924/00 20130101; H01L 2224/45144 20130101;
H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L 24/45
20130101 |
Class at
Publication: |
257/337 ;
257/328; 257/E29.062 |
International
Class: |
H01L 29/10 20060101
H01L029/10 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 5, 2003 |
JP |
2003-313971 |
Claims
1. A semiconductor device including a MISFET, comprising: a
semiconductor substrate having a front surface and a rear surface
opposite to the front surface; a semiconductor layer formed over
the front surface of the semiconductor substrate; a gate insulating
film of the MISFET formed over the semiconductor layer; a gate
electrode of the MISFET formed over the gate insulating film; a
first impurity region formed in the semiconductor layer and
constituting a drain region of the MISFET or a source region of the
MISFET; a second impurity region formed in the semiconductor layer
and constituting a drain region of the MISFET or a source region of
the MISFET; and a rear electrode formed on the rear surface of the
semiconductor substrate, wherein a groove is formed in the
semiconductor layer and the semiconductor substrate, wherein a
conductive film is embedded into the groove, wherein the first
impurity region is electrically connected with the rear electrode
via the conductive film, wherein, in a plane view, a shape of the
gate electrode is longer in a first direction than in a second
direction which is substantially perpendicular to the first
direction, and wherein, in the plane view, a shape of the groove is
longer in the first direction than in the second direction.
2. A semiconductor device according to the claim 1, further
comprising: an interlayer insulating film formed over the
semiconductor layer, the conductive film and the MISFET; a first
plug formed in the interlayer insulating film and connected to the
conductive film; a second plug formed in the interlayer insulating
film and connected to the first impurity region; and a wiring
formed over the interlayer insulating film and connected to the
first and second plugs.
3. A semiconductor device according to the claim 2, wherein a
plurality of the first plugs are formed in the interlayer
insulating film and are connected to the conductive film.
4. A semiconductor device according to the claim 3, wherein, in the
plane view, a shape of each the first plugs is longer in the second
direction than in the first direction.
5. A semiconductor device according to the claim 4, wherein, in the
plane view, a shape of the second plugs is longer in the first
direction than in the second direction.
6. A semiconductor device according to the claim 3, wherein, in the
plane view, a shape of the second plugs is longer in the first
direction than in the second direction.
7. A semiconductor device according to the claim 1, wherein the
conductive film includes a polysilicon film.
8. A semiconductor device according to the claim 1, wherein the
conductive film includes a metal film.
9. A semiconductor device according to the claim 1, wherein the
MISFET is configured to be used for a power amplifier circuit.
10. A semiconductor device according to the claim 1, further
comprising a plurality of the MISFETs, wherein, in the second
direction, first and second MISFETs are abutted to each other in
the second direction, and wherein, in the second direction, the
conductive film is arranged between the first impurity region of
the first MISFET and the first impurity region of the second
MISFET.
11. A semiconductor device including a MISFET, comprising: a
semiconductor substrate structure having a front surface and a rear
surface opposite to the front surface; a gate insulating film of
the MISFET formed over the front surface of the semiconductor
substrate structure; a gate electrode of the MISFET formed over the
gate insulating film; a first impurity region formed in the
semiconductor substrate structure and constituting a drain region
of the MISFET or a source region of the MISFET; a second impurity
region formed in the semiconductor substrate structure and
constituting a drain region of the MISFET or a source region of the
MISFET; and a rear electrode formed on the rear surface of the
semiconductor substrate structure, wherein a groove is formed in
the semiconductor substrate structure, wherein a conductive film is
embedded into the groove, wherein the first impurity region is
electrically connected with the rear electrode via the conductive
film, wherein, in a plane view, a shape of the gate electrode is
longer in a first direction than in a second direction which is
substantially perpendicular to the first direction, and wherein, in
the plane view, a shape of the groove is longer in the first
direction than in the second direction.
12. A semiconductor device according to the claim 11, further
comprising: an interlayer insulating film formed over the
semiconductor substrate structure, the conductive film and the
MISFET; a first plug formed in the interlayer insulating film and
connected to the conductive film; a second plug formed in the
interlayer insulating film and connected to the first impurity
region; and a wiring formed over the interlayer insulating film and
connected to the first and second plugs.
13. A semiconductor device according to the claim 12, wherein a
plurality of the first plugs are formed in the interlayer
insulating film and are connected to the conductive film.
14. A semiconductor device according to the claim 13, wherein, in
the plane view, a shape of each the first plugs is longer in the
second direction than in the first direction.
15. A semiconductor device according to the claim 14, wherein, in
the plane view, a shape of the second plugs is longer in the first
direction than in the second direction.
16. A semiconductor device according to the claim 13, wherein, in
the plane view, a shape of the second plugs is longer in the first
direction than in the second direction.
17. A semiconductor device according to the claim 11, wherein the
conductive film includes a polysilicon film.
18. A semiconductor device according to the claim 11, wherein the
conductive film includes a metal film.
19. A semiconductor device according to the claim 11, wherein the
MISFET is configured to be used for a power amplifier circuit.
20. A semiconductor device according to the claim 11, further
comprising a plurality of the MISFETs, wherein, in the second
direction, first and second MISFETs are abutted to each other in
the second direction, and wherein, in the second direction, the
conductive film is arranged between the first impurity region of
the first MISFET and the first impurity region of the second
MISFET.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] The present application is a continuation of U.S.
application Ser. No. 12/823,453, filed Jun. 25, 2010, which, in
turn, is a continuation of U.S. application Ser. No. 11/645,577
filed Dec. 27, 2006 (now U.S. Pat. No. 7,791,131), which is a
continuation of U.S. application Ser. No. 10/902,130, filed Jul.
30, 2004 (now U.S. Pat. No. 7,176,520), which claims priority from
Japanese Patent application JP2003-313971, filed on Sep. 5, 2003,
the contents of each of which are hereby incorporated by reference
into this application.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a semiconductor device to
be used for mobile communication apparatuses (so called mobile
phones) and to a technique for the manufacture thereof,
particularly to a technique that is effective when applied to a
semiconductor device to be mounted on an RF (Radio Frequency) power
module.
[0003] In recent years, mobile communication apparatuses (so called
mobile phones), which employ a communication system typified by GSM
(Global System for Mobile Communications), PCS (Personal
Communication Systems), PDC (Personal Digital Cellular) system or
CDMA (Code Division Multiple Access) system, have gained widespread
use throughout the world.
[0004] In general, such mobile communication apparatuses are each
composed of an antenna for emitting and receiving electric waves, a
high frequency power amplifier for amplifying power-modulated
high-frequency signals and supplying them to the antenna, a
receiver for processing high frequency signals received by the
antenna, a controller for controlling them and a cell (battery) for
supplying a power supply voltage.
[0005] Japanese Unexamined Patent Publication No. Hei
6(1994)-310717 (Patent Document 1) discloses a technique for
manufacturing a high voltage MOSFET having, on a drain side, a
heavily doped drain region via a lightly doped offset drain region.
The improvement is constituted by the fact that an impurity is
ion-implanted into the sidewalls of a gate electrode twice, that
is, before and after formation of sidewall spacers, to give an LDD
(Lightly Doped Drain) structure to a source.
[0006] U.S. Pat. No. 6,020,611 discloses a technique for the
manufacture of a high voltage MOSFET having, on a drain side, a
highly doped drain region via a lightly doped offset drain region.
The improvement here is constituted by the fact that a third drain
region is formed between the lightly doped offset drain region and
the highly doped drain region by twice performing ion implantation
using photoresist films having different patterns as masks. [0007]
[Patent Document 1] Japanese Unexamined Patent Publication No. Hei
6(1994)-310717 [0008] [Patent Document 2] U.S. Pat. No.
6,020,611
SUMMARY OF THE INVENTION
[0009] As an amplifying element to be used for the power amplifier
circuit of a mobile communication apparatus, compound semiconductor
devices, silicon bipolar transistors, and silicon power insulated
gate field effect transistors (which will hereinafter be called
power MOSFETs) have been used, depending on the purpose of use or
the environment.
[0010] Of these, power MOSFETs are amplifying elements having a
structure in which a drain is maintained at a high breakdown
voltage by disposing, on a drain side, a heavily doped drain region
via a lightly doped offset drain region. These elements are
advantageous over compound semiconductor devices in providing easy
bias control and high mass productivity, in spite of their
inferiority in power added efficiency.
[0011] Owing to a recent rise in the amount of power consumption of
a mobile communication apparatus that has occurred with an increase
in the number of its parts, each part must satisfy the requirements
for size reduction and the ability to operate at a lower power.
Power amplifier circuits consume a particularly large power among
the various parts, so that a reduction in the chip size and
operation at a lower power are strongly demanded.
[0012] Accordingly, one of the problems of a semiconductor device
for a mobile communication apparatus which uses a power MOSFET as
an amplifying element is to improve the power added efficiency of
an amplifier circuit using a power MOSFET. Another problem is to
promote a size reduction of the chip on which a power MOSFET
serving as an amplifying element is formed.
[0013] Improvement of the power added efficiency of an amplifying
circuit can be attained by a reduction in the on resistance (Ron)
of the power MOSFET and, at the same time, a reduction in the
parasitic capacitance between the drain and gate, which is called a
feedback capacitance (Cgd). There is however, a trade-off
relationship between the on resistance (Ron) and the feedback
capacitance (Cgd) of a power MOSFET. An increase in the impurity
concentration of an offset drain region is effective for reducing
the on resistance (Ron) of the power MOSFET. However, this
inevitably increases the feedback capacitance (Cgd), which is a
parasitic capacitance formed between the drain and gate, and lowers
the power added efficiency of an amplifier circuit. It is therefore
necessary to develop a technique that is capable of reducing both
the on resistance (Ron and the feedback capacitance (Cgd) in order
to improve the power added efficiency of a power MOSFET.
[0014] An object of the present invention is to provide a technique
for improving the power added efficiency of a semiconductor device
for use in mobile communication apparatuses.
[0015] Another object of the present invention is to provide a
technique for promoting a reduction in chip size of a semiconductor
device for mobile communication apparatuses.
[0016] The above-described and other objects and novel features of
the present invention will be apparent from the following
description herein and accompanying drawings.
[0017] Of the various aspects and features of the present invention
disclosed in the present application, the representative ones will
be outlined below.
[0018] In one aspect of the present invention, there is provided a
semiconductor device having an MOSFET, which comprises: a source
and a drain of a second conductivity type formed over a portion of
the main surface of a semiconductor substrate of a first
conductivity type while being spaced apart by a channel formation
region therebetween; a gate electrode formed over the channel
formation region via a gate insulating film; sidewall spacers
formed over the sidewalls of the gate electrode; and a sinker layer
of the first conductivity type which is formed over another portion
of the main surface of the semiconductor substrate and is in
contact with the source.
[0019] The drain of the MOSFET comprises a lightly doped region of
the second conductivity type, and a heavily doped region of the
second conductivity type formed in contact with the lightly doped
region and spaced apart from the channel formation region; and, the
lightly doped region further comprises a first lightly doped
region, which is in contact with the channel formation region, and
a second lightly doped region formed in self alignment with the
sidewall spacers and having an impurity concentration which is
higher than that of the first lightly doped region.
[0020] In another aspect of the present invention, there is also
provided a semiconductor device having an MOSFET, which comprises:
a source and a drain of a second conductivity type which are formed
over a portion of the main surface of a semiconductor substrate of
a first conductivity type while being spaced apart by a channel
formation region interposed between the source and drain; a gate
electrode formed over the channel formation region via a gate
insulating film; and a plurality of sinker layers of a first
conductivity type which are formed over other portions of the main
surface of the semiconductor substrate to be brought in contact
with the source.
[0021] The source and the drain have finger-shaped plane patterns
extending parallel to each other along a first direction of the
main surface of the semiconductor substrate; and, the plurality of
sinker layers are arranged along the first direction, and the
sinker layers each have a rectangular plane pattern such that the
longer side thereof is parallel to a second direction intersecting
with the first direction.
[0022] In a further aspect of the present invention, there is also
provided a semiconductor device, which comprises: a source and a
drain of a second conductivity type formed in a first region of the
main surface of a semiconductor substrate while being spaced by a
channel formation region interposed between the source and drain; a
gate electrode formed of a polysilicon film over the channel
formation region via a gate insulating film; a cap insulating film
covering the upper portion of the gate electrode; a stopper
insulating film covering the upper portion of the cap insulating
film and being different in etching rate from that of the cap
insulating film; and an interlayer insulating film covering the
upper portion of the stopper insulating film.
[0023] A trench penetrating through the interlayer insulating film,
stopper insulating film and cap insulating film and reaching the
surface of the gate electrode is formed over the gate electrode,
and a conductive film having a smaller electric resistance than
that of the polysilicon film is embedded in the trench.
[0024] In a still further aspect of the present invention, there is
also provided a method of manufacture of a semiconductor device,
which comprises the steps of forming a gate electrode over the main
surface of a semiconductor substrate of a first conductivity type
via a gate insulating film, and ion-implanting an impurity into the
semiconductor substrate on both sides of the gate electrode to form
a source and drain. The drain forming step further comprises the
sub-steps of:
[0025] (a) ion-implanting an impurity into a drain formation region
of the semiconductor substrate and thereby forming a first lightly
doped region of a second conductivity type extending, at one end
thereof, below the sidewalls of the gate electrode;
[0026] (b) after the step (a), forming sidewall spacers over the
sidewalls of the gate electrode;
[0027] (c) after the step (b), ion-implanting an impurity into a
drain formation region of the semiconductor substrate and thereby
forming a second lightly doped region of a second conductivity
type, which has a higher impurity concentration than that of the
first lightly doped region, in self alignment with the sidewall
spacers; and
[0028] (d) ion-implanting an impurity into a portion of the second
lightly doped region and thereby forming a heavily doped region of
the second conductivity type which has a higher impurity
concentration than that of the second lightly doped region and is,
at one end thereof, spaced from the lower portion of the sidewalls
of the gate electrode.
[0029] Advantages available by typical features of the invention
disclosed in the present application will be described briefly.
[0030] The present invention makes it possible to reduce both the
on resistance (Ron) and the feedback capacitance (Cgd) of a power
MOSFET, leading to an improvement in the power added efficiency of
a semiconductor device for mobile communication apparatuses.
[0031] By shunting the gate electrode with a low-resistance plug
made of a metal film embedded in a trench formed over the gate
electrode of a power MOSFET and thereby reducing its sheet
resistance, the provision of an Al alloy wiring region for a shunt
becomes unnecessary, and the size of a semiconductor chip on which
the power MOSFET is to be formed can be reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0032] FIG. 1 is a block diagram of an amplifier circuit according
to one embodiment of the present invention;
[0033] FIG. 2 is a fragmentary cross-sectional view illustrating a
semiconductor device of the present invention;
[0034] FIG. 3 is a fragmentary cross-sectional view illustrating
the semiconductor device of the present invention during its
manufacturing step;
[0035] FIG. 4 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 3;
[0036] FIG. 5 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 4;
[0037] FIG. 6 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 5;
[0038] FIG. 7 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 6;
[0039] FIG. 8 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 7;
[0040] FIG. 9 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 8;
[0041] FIG. 10 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 9;
[0042] FIG. 11 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 10;
[0043] FIG. 12 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 11;
[0044] FIG. 13 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 12;
[0045] FIG. 14 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 13;
[0046] FIG. 15 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 14;
[0047] FIG. 16 is a fragmentary cross-sectional view illustrating
the semiconductor device during a manufacturing step following that
of FIG. 15;
[0048] FIG. 17 is a table showing a comparison between the
structure of the present invention and a conventional structure in
on resistance (Ron) and feedback capacitance (Cgd);
[0049] FIG. 18 is a graph showing a comparison between the
structure of the present invention and the conventional structure
in power added efficiency when a sinusoidal signal having a
frequency of 900 MHz is input;
[0050] FIG. 19 is a diagrammatic perspective view illustrating an
RF power module having an amplifier circuit according to one
embodiment of the present invention;
[0051] FIG. 20 is a plan view illustrating a plane layout of
rectangular sinker layers having the width of one side fixed;
[0052] FIG. 21 is a plan view illustrating a layout of rectangular
sinker layers forming an X-shaped or T-shaped intersection;
[0053] FIG. 22 is a plan view illustrating a layout of rectangular
sinker layers arranged so that their longitudinal direction is
parallel to the longitudinal direction of the finger;
[0054] FIG. 23 is a plan view illustrating a layout of rectangular
sinker layers arranged so that their longitudinal direction is
vertical to the longitudinal direction of the finger;
[0055] FIG. 24 is a graph for comparing the area of the rectangular
sinker layer between the rectangular sinker layers arranged in
parallel and the rectangular sinker layers arranged vertical, each
relative to the longitudinal direction of the finger;
[0056] FIG. 25 is a plan view illustrating the layout of the sinker
layers arranged in a meander form;
[0057] FIG. 26 is a plan view illustrating the layout of the sinker
layers arranged in a mesh form; and
[0058] FIG. 27 is a fragmentary cross-sectional view of the
semiconductor device of the present invention in which a gate
electrode has been shunted with a plug.
DETAILED DESCRIPTION OF THE INVENTION
[0059] Embodiments of the present invention will be described
hereinafter more specifically with reference to the accompanying
drawings. In all of the drawings, elements having like function
will be identified by like reference numerals, and overlapping
descriptions thereof will be omitted.
[0060] In the following description, reference will be made to
features of the invention after the subject matter of the invention
is divided in plural sections or in plural embodiments if necessary
for convenience's sake. These plural sections or embodiments are
not independent of each other, but are in a relation such that one
is a modification, represents details or is a complementary
description of a part or whole of the other one, unless otherwise
specifically indicated. In the following description, when
reference is made to a number of elements (including a number,
value, amount and range), the number of elements is not limited to
a specific number, but can be greater than or less than the
specific number, unless otherwise specifically indicated, or in the
case it is principally apparent that the number is limited to the
specific number.
[0061] Moreover, in the description of the embodiments, it is
needless to say that the constituting elements (including element
steps) are not always essential, unless otherwise specifically
indicated, or in the case where it is principally apparent that
they are essential.
[0062] Similarly, in the following description of the embodiments,
when reference is made to the shape or positional relationship of
constituting elements, a shape or positional relationship
substantially analogous or similar to it is also embraced, unless
otherwise specifically indicated, or in the case where it is
utterly different in principle. This also applies to the
above-described value and range.
Embodiment 1
[0063] Embodiment 1 is a semiconductor device mounted on an RF
(Radio Frequency) power module to be used for a digital mobile
phone which transmits data by making use of, for example, a GSM
system network.
[0064] FIG. 1 is a block diagram of an amplifier circuit which
constitutes the RF power module of Embodiment 1. In this diagram,
there is illustrated an amplifier circuit to be used for an RF
power module for which two frequency bands, for example, GSM900 and
DCS1800, can be used (dual band system); and, at each frequency
band, two communication systems, that is, a GMSK (Gaussian filtered
Minimum Shift Keying) modulation system and an EDGE (Enhanced Data
GSM Environment) modulation system, can be used.
[0065] The amplifier circuit has a power amplifier circuit 102A for
GSM900, a power amplifier circuit 102B for DCS1800, and a
peripheral circuit 103 which controls or assists the amplifying
operation of each of the power amplifier circuits 102A and 102B.
The power amplifier circuits 102A and 102B each have three
amplifier stages 102A1 to 102A3 and 102B1 to 102B3, respectively,
and three matching circuits 102AM1 to 102AM3 and 102BM1 to 102BM3,
respectively. More specifically, input terminals 104a and 104b are
electrically connected to the inputs of the first-stage amplifier
stages 102A1 and 102B1 via matching circuits 102AM1 and 102BM1 for
input, respectively; the outputs of the first-stage amplifier
stages 102A1 and 102B1 are electrically connected to the inputs of
the second-stage amplifier stages 102A2 and 102B2 via interstage
matching circuits 102AM2 and 102BM2, respectively; the outputs of
the second-stage amplifier stages 102A2 and 102B2 are electrically
connected to the inputs of the final-stage amplifier stages 102A3
and 102B3 via interstage matching circuits 102AM3 and 102BM3,
respectively; and the outputs of the final-stage amplifier stages
102A3 and 102B3 are electrically connected to the output terminals
105a and 105b, respectively.
[0066] The peripheral circuit 103 has a control circuit 103A, and
it also has a bias circuit 103B for applying a bias voltage to the
above-described amplifier stages 102A1 to 102A3 and 102B1 to 102B3.
The control circuit 103A is a circuit that is used for generating a
desired voltage to be applied to the above-described power
amplifier circuits 102A and 102B, and it has a power control
circuit 103A1 and a bias voltage generator circuit 103A2. The power
control circuit 103A1 is a circuit used for generating a first
power voltage to be applied to drain terminals of a power MOSFET
for outputs of the amplifier stages 102A1 to 102A3 and 102B1 to
102B3. The bias voltage generator circuit 103A2 is a circuit used
for generating a first control voltage to be applied to control the
bias circuit 103B. When the power control circuit 103A1 generates
the first power voltage in accordance with an output level
indicating signal supplied from a base band circuit outside, the
bias voltage generator circuit 103A2 generates the first control
voltage based on the first power voltage generated by the power
control circuit 103A1. The base band circuit is a circuit used for
generating the output level indicating signal. This output level
indicating signal is a signal indicating the output levels of the
power amplifier circuits 102A and 102B, and they are generated
based on the distance between a mobile phone and a base station
thereof, that is, an output level according to the intensity of the
electric waves.
[0067] The power amplifier circuits 102A and 102B have a circuit
constitution having three n channel type power MOSFETs
cascade-connected successively as the three amplifying stages 102A1
to 102A3 and 102B1 to 102B3, respectively.
[0068] FIG. 2 is a fragmentary cross-sectional view of a
semiconductor substrate 1 having the power amplifier circuits 102A
and 102B formed thereon.
[0069] Over the main surface of the semiconductor substrate (a
semiconductor substrate with a first conductivity type, which will
hereinafter simply be called a "substrate") 1 having a specific
resistance of about 5 m.OMEGA.cm and which is made of p type single
crystal silicon, an epitaxial layer 2 made of p type single crystal
silicon having a specific resistance of about 20 .OMEGA.cm and a
film thickness of about 2 .mu.m is formed. In a portion of the main
surface of the epitaxial layer 2, a p well 5 is formed. This p well
5 functions as a punch-through stopper, which inhibits extension of
a depletion layer from the drain to the source of the power
MOSFET.
[0070] Over the surface of the p well 5, a gate electrode 7 of the
power MOSFET is formed via a gate insulating film 6 made of silicon
oxide. The gate electrode 7 is composed of a film stack, for
example, of an n type polysilicon film and a tungsten silicide
(WSi.sub.x) film. The p well 5 below the gate electrode 7 will
constitute a formation region of a channel of the power MOSFET.
Over the sidewalls of the gate electrode 7, sidewall spacers 12
made of silicon oxide are formed.
[0071] In regions inside the epitaxial layer 2, which are separated
from each other with a channel formation region inserted
therebetween, a source and a drain of the power MOSFET are formed.
The drain has an n.sup.- type offset drain region (first lightly
doped region) 9 which is in contact with the channel formation
region; an n type offset drain region (second lightly doped region)
13 which is in contact with the n.sup.- type offset drain region 9
and is spaced from the channel formation region; and an n.sup.+
type drain region (highly doped offset region) 15 which is in
contact with the n type offset drain region 13 and spaced further
from the channel formation region. Among the n.sup.- type offset
drain region 9, n type offset drain region 13 and n.sup.+ type
drain region 15, the n.sup.- type offset drain region 9 which is
closest to the gate electrode 7 has the lowest impurity
concentration, while the n.sup.+ drain region 15 which is most
distant from the gate electrode has the highest impurity
concentration. As described later, the n.sup.- type offset drain
region 9 is formed in self alignment with the gate electrode 7,
while the n type offset drain region 13 is formed in self alignment
with the sidewall spacers 12 over the sidewalls of the gate
electrode 7.
[0072] As described above, the power MOSFET of this Embodiment is
characterized by the fact that an offset drain region existing
between the gate electrode 7 and the n.sup.+ type drain region 15
is endowed with a double offset structure by adjusting the impurity
concentration of the n.sup.- type offset drain region 9 closest to
the gate electrode 7 to a relatively low level, while that of the n
type offset drain region 13 most distant from the gate electrode 7
is adjusted to be relatively high.
[0073] Owing to the above-described structure, a depletion layer
extends between the gate electrode 7 and the drain, resulting in a
reduction in the feedback capacitance (Cgd) formed between the gate
electrode 7 and the n.sup.- type offset drain region 9 in the
vicinity thereof. In addition, owing to a high impurity
concentration of the n type offset drain region 13, the on
resistance (Ron) decreases. Since the n type offset drain region 13
is formed at a position distant from the gate electrode 7, its
influence on the feedback capacitance (Cgd) is negligible. In other
words, according to the power MOSFET of this Embodiment, the on
resistance (Ron) and feedback capacitance (Cgd), which were in a
trade-off relationship in the conventional power MOSFET, can be
reduced simultaneously, making it possible to improve the power
added efficiency of an amplifier circuit.
[0074] The source of the power MOSFET has an n.sup.- type source
region (lightly doped region) 10 in contact with the channel
formation region, and an n.sup.+ type source region (heavily doped
region) 16 that is in contact with the n.sup.- type source region
10 and is spaced from the channel formation region. The n.sup.-
type source region 10 in contact with the channel formation region
has a lower impurity concentration and has a shallower depth,
compared with the n.sup.+ type source region 16 that is spaced from
the channel formation region. Below the n.sup.- type source region
10, a p type halo region 11 is formed in order to suppress
extension of an impurity from the source to the channel formation
region and, moreover, to suppress a short channel effect. As
described later, the n.sup.- type source region 10 is formed in
self alignment with the gate electrode 7, while the n.sup.+ type
source region 16 is formed in self alignment with the sidewall
spacers 12 over the sidewalls of the gate electrode 7.
[0075] At the end (end opposite to a side to be brought into
contact with the n.sup.- type source region 10) of the n.sup.+ type
source region 16, a p type sinker layer 4 is formed in contact with
the n.sup.+ type source region 16. In the vicinity of the surface
of this p type sinker layer 4, a p.sup.+ type semiconductor region
17 for reducing the resistance of the surface of the p type sinker
layer 4. The p type sinker layer 4 is a conductive layer for
connecting the source to the substrate 1. One of the
characteristics of the power MOSFET of this Embodiment resides in
the fact that the p type sinker layer 4 is formed of a conductive
layer made of a p type polysilicon film embedded in a trench 3
formed in the epitaxial layer 2.
[0076] In the conventional power MOSFET, a sinker layer is formed
by ion-implanting an impurity into the epitaxial layer 2. Although
the p type sinker layer that is formed by ion implantation is
disadvantageous in that it has an excessively large parasitic
resistance per unit area, the p type sinker layer 4 having a small
parasitic resistance can be formed by embedding the trench 3 with a
heavily doped p type polysilicon film.
[0077] A plug 23 in a contact hole 22, which is formed in a silicon
nitride film 20 and a silicon oxide film 21, is connected to the
upper portion of each of the p type sinker layer 4 (p.sup.+ type
semiconductor region 17), the source (n.sup.+ type source region
16) and drain (n.sup.+ type offset drain region 15). The plug 23 is
made of a conductive film composed mainly of a W film.
[0078] To the p type sinker layer 4 (p.sup.+ type semiconductor
region 17) and source (n.sup.+ type source region 16), a source
electrode 25 is connected via the plug 23; while, to the drain
(n.sup.+ type offset drain region 15), a drain electrode 24 is
connected via the plug 23. The source electrode 25 and drain
electrode 24 are each formed of a conductive film composed mainly
of an aluminum (Al) alloy film.
[0079] To the drain electrode 24 and source electrode 25,
interconnects 28 are connected via through-holes 27 formed in a
silicon oxide film 26 covering the drain electrode 24 and source
electrode 25, respectively. The interconnect 28 is formed of a
conductive film composed mainly of an aluminum (Al) alloy film.
Over the interconnect 28, a surface protective film 29, composed of
a film stack consisting of a silicon oxide film and a silicon
nitride film, is formed. Over the backside of the substrate 1, a
source rear electrode 31, made of a film stack consisting of, for
example, a nickel (Ni) film, a titanium (Ti) film, Ni film and gold
(Au) film, is formed.
[0080] A method of manufacture of the power MOSFET illustrated in
FIG. 2 will be described next with reference to FIGS. 3 to 16 in
the order of the steps thereof.
[0081] As illustrated in FIG. 3, after formation of an epitaxial
layer 2, which is made of p type single crystal silicon, over the
main surface of the substrate 1, which is made of p type single
crystal silicon, by using a known epitaxial growth method, a
portion (a sinker layer formation region) of the epitaxial layer 2
is etched by conventional photolithography and dry etching, whereby
a trench 3 having a depth of about 2.2 .mu.m and reaching the
substrate 1 is formed.
[0082] As illustrated in FIG. 4, after deposition of a p type
polysilicon film 30 over the substrate 1, including the inside of
the trench 3, by CVD, the polysilicon film 30 outside the trench 3
is removed by etchback, whereby a p type sinker layer 4 made of the
p type polysilicon film 30 is formed inside of the trench 3. By
embedding the inside of the trench 3 with the impurity-doped p type
polysilicon film 3 in such a manner, the p type sinker layer 4
having a small parasitic resistance can be formed. Instead of the
polysilicon film, a metal film can be embedded inside of the trench
3 to form a sinker layer having a smaller parasitic resistance.
[0083] As illustrated in FIG. 5, a p well 5 serving as a
punch-through stopper is formed by ion-implanting boron (B) into a
portion of the epitaxial layer 2 using a photoresist film 40 as a
mask. The p well 5 is formed mainly in the source formation region
and channel formation region of the power MOSFET. Ion implantation
is effected twice under the following conditions: first, at an
acceleration energy of 200 keV and a dosage of 2.0.times.10.sup.13
/cm.sup.2, and, second, at an acceleration energy of 50 keV and a
dosage of 1.0.times.10.sup.13/cm.sup.2
[0084] After washing the surface of the epitaxial layer 2 with
hydrofluoric acid, the substrate 1 is heat treated at about
800.degree. C. to form a gate insulating film 6 made of a silicon
oxide film and having a thickness of about 11 nm over the surface
of the epitaxial layer 2, as illustrated in FIG. 6. As the gate
insulating film 6, the thermal oxide film may be replaced with a
silicon oxide film containing nitrogen, i.e. a so-called oxynitride
film. In this case, trapping of hot electrons on the interface of
the gate insulating film 6 can be reduced. Alternatively, the gate
insulating film 6 may be formed from a two-layer oxide film
obtained by depositing a silicon oxide film over the thermal oxide
film by CVD.
[0085] A gate electrode 7 is then formed over the gate insulating
film 6. This gate electrode 7 is formed, for example, by depositing
an n type polysilicon film having a thickness of about 100 nm over
the gate insulating film 6 by CVD, depositing a WSi.sub.x film
having a thickness of 150 nm over the n type polysilicon film by
CVD, depositing a cap insulating film 8 made of a silicon oxide
film having a thickness of 150 nm over the WSi.sub.x film by CVD,
and then dry etching the cap insulating film 8, WSi.sub.x film and
n type polysilicon film using a photoresist film as a mask. The
gate electrode 7 has a gate length of about 0.23 .mu.m.
[0086] As illustrated in FIG. 7, an n.sup.- type offset drain
region 9 is then formed by ion-implanting phosphorus (P) into a
portion of the epitaxial layer 2 using a photoresist film 41 as a
mask. This n.sup.- type offset drain region 9 has its ends below
the sidewalls of the gate electrode 7 so that each end is brought
into contact with the channel formation region. Ion implantation
for the formation of the n.sup.- type offset drain region 9 is
conducted under the conditions, for example, of an acceleration
energy of 40 keV and a dosage of 8.0.times.10.sup.12 /cm.sup.2. By
lowering the impurity concentration of the n.sup.- type offset
drain region 9, a depletion layer extends between the gate
electrode 7 and drain, leading to a reduction in the feedback
capacitance (Cgd) formed therebetween.
[0087] After removal of the photoresist film 41, an n.sup.- type
source region 10 is formed by ion-implanting arsenic (As) into the
surface of the p well 5 using a photoresist film 42 as a mask, as
illustrated in FIG. 8. Ion implantation is conducted under the
conditions, for example, of an acceleration energy of 15 keV and a
dosage of 3.0.times.10.sup.15 /cm.sup.2. By ion implantation of an
impurity (As) at a low acceleration energy and formation of the
n.sup.- type source region 10 with a shallow depth, extension of
the impurity from the source toward the channel formation region
can be controlled, leading to suppression in a lowering of the
threshold voltage.
[0088] Following the ion implantation of an impurity (As), boron
(B) is ion-implanted into the surface of the p well 5 using the
photoresist film 42 as a mask, whereby a p type halo region 11 is
formed below the n.sup.- type source region 10. For this ion
implantation, tilt-angle ion implantation in which an impurity is
ion-implanted at a tilt angle of 30.degree. relative to the main
surface of the substrate 1 is employed. For example, after ion
implantation of an impurity at an acceleration energy of 15 keV and
a dosage of 7.0.times.10.sup.12 /cm.sup.2, a 90.degree. rotation of
the substrate 1 is repeated four times. The formation of the p type
halo region 11 is not always necessary, but it contributes to
further suppression in the extension of the impurity from the
source toward the channel formation region, and it also contributes
to further suppression in short channel effects so that a lowering
of the threshold voltage can be suppressed further.
[0089] After removal of the photoresist film 42, sidewall spacers
12 are formed over the sidewalls of the gate electrode 7, as
illustrated in FIG. 10. The sidewall spacers 12 are formed by
depositing a silicon oxide film over the substrate 1 by CVD,
followed by anisotropic etching of this silicon oxide film. As the
silicon oxide film for the sidewall spacers 12, an HLD (High
Temperature Low Pressure Decomposition) film obtained by thermal
decomposition of TEOS (tetraethyl orthosilicate), which is an
organic source, is employed. This HLD film features excellent
uniformity in thickness and difficulty in diffusion of an impurity
therein.
[0090] As illustrated in FIG. 11, using a photoresist film 43
having an opening over the drain formation region as a mask,
phosphorus (P) is ion-implanted into a portion of the n.sup.- type
offset drain region 9. This ion implantation is effected, for
example, under the conditions of an acceleration energy of 40 keV
and a dosage of 8.0.times.10.sup.12 /cm.sup.2. By this ion
implantation, an n type offset drain region 13 is formed in self
alignment with the sidewall spacers 12 that are formed over the
sidewalls, on the drain side, of the gate electrodes 7.
[0091] The acceleration energy of this ion implantation is equal to
that of the ion implantation for the formation of the n.sup.- type
offset drain region 9, so that the junction depth of the n type
offset drain region 13 is almost equal to that of the n.sup.- type
offset drain region 9. In addition, the impurity (P) implanted into
the n type offset drain region 13 has the same conductivity type as
that implanted into the n.sup.- type offset drain region 9, so that
the impurity concentration of the n type offset drain region 13
becomes higher than that of the n.sup.- type offset drain region 9.
In other words, the resistance of the n type offset drain region 13
becomes lower than that of the n.sup.- type offset drain region 9,
so that the on resistance (Ron) can be reduced.
[0092] The n.sup.- type offset drain region 9 is formed in self
alignment with the gate electrode 7, while the n type offset drain
region 13 is formed in self alignment with the sidewall spacers 12
on the sidewalls of the gate electrode 7, so that the n type offset
drain region 13 is spaced from the gate electrode 7 by a distance
corresponding to the thickness of the sidewall spacers 12 extending
along the gate length direction. Therefore, even an increase in the
impurity concentration in the n type offset drain region 13 has
only a slight influence on the feedback capacitance (Cgd).
[0093] After removal of the photoresist film 43, with a photoresist
film 44 having an opening over each of a portion of the n type
offset drain region 13 and the p well 5 of the source formation
region, arsenic (As) is ion-implanted into the above-described
portion of each of the n type offset drain region 13 and p well 5,
as illustrated in FIG. 12. This ion implantation is effected, for
example, under the conditions of an acceleration energy of 60 keV
and a dosage of 8.0.times.10.sup.15 /cm.sup.2.
[0094] By the above-described ion implantation, an n.sup.+ type
drain region 15 having a higher impurity concentration than that of
the n type offset drain region 13 and which is more distant from
the channel formation region than the n type offset drain region 13
is formed in a portion of the n type offset drain region 13. At
this time, by forming the highly doped n.sup.+ type drain region 15
with a smaller thickness than that of the lightly-doped n type
offset drain region 13 or n.sup.- type offset drain region 9, a
parasitic capacitance (drain capacitance) between source and drain
can be reduced.
[0095] By the above-described ion implantation, an n.sup.+ type
source region 16 having a higher impurity concentration than that
of the n.sup.- type source region 10, and which has a bottom
position deeper than that of the n.sup.- type source region 10, is
also formed in the p well 5. This n.sup.+ type source region 16 is
formed in self alignment with the sidewall spacers 12 over the
sidewalls of the gate electrode 7, so that it is separated from the
channel formation region by a distance corresponding to the
thickness of the sidewall spacers 12 extending along the gate
length direction.
[0096] By the formation of the n.sup.+ type source region 16 in
self alignment with the sidewall spacers 12, as described above,
the distance between the n.sup.+ type source region 16 and the
channel formation region can be defined with high accuracy. If the
n.sup.+ type source region 16 is spaced from the channel formation
region by ion implantation using a photoresist film as a mask
without forming sidewall spacers 12 over the sidewalls of the gate
electrode 7, misalignment of the photomask causes variations in the
distance between the n.sup.+ type source region 16 and the channel
formation region. In this case, if the end portion of the n.sup.+
type source region 16 comes too close to the channel formation
region, the impurity in the n.sup.+ type source region 16 diffuses
in the channel formation region, causing variations in the
threshold voltage. Too long a distance between the end portion of
the n.sup.+ type source region 16 and channel formation region, on
the other hand, increases the source resistance.
[0097] According to this Embodiment, in which the n.sup.+ type
source region 16 is formed in self alignment with the sidewall
spacers 12, problems as described above can be avoided even if the
power MOSFET is miniaturized. It is therefore possible to promote
miniaturization of the power MOSFET.
[0098] By the steps so far described, a power MOSFET having a drain
composed of an n.sup.- type offset drain region 9, an n type offset
drain region 13 and an n.sup.+ type drain region 15, and a source
composed of an n.sup.- type source region 10 and an n.sup.+ type
source region 16 is completed.
[0099] After removal of the photoresist film 44, using as a mask a
photoresist film 45 having an opening over the p type sinker layer
4, boron fluoride (BF.sub.2) is ion-implanted into the surface of
the p type sinker layer 4, whereby a p.sup.+ type semiconductor
region 17 is formed and the resistance of the surface of the p type
sinker layer 4 is lowered. Ion implantation is effected, for
example, under the conditions of an acceleration energy of 50 keV
and a dosage of 2.0.times.10.sup.15 cm.sup.2.
[0100] After removal of the photoresist film 45, as illustrated in
FIG. 14, contact holes 22 are formed over the p type sinker layer 4
(p.sup.+ type semiconductor region 17), the source (n.sup.+ type
source region 16) and the drain (n.sup.+ type drain region 15),
respectively, by depositing a silicon nitride film 20 having a
thickness of about 50 nm and a silicon oxide film 21 having a
thickness of about 800 nm over the substrate 1 by CVD, planarizing
the surface of the silicon oxide film 21 by chemical mechanical
polishing, and dry etching the silicon oxide film 21 and silicon
nitride film 20 using a photoresist film as a mask.
[0101] As illustrated in FIG. 15, a plug 23 composed mainly of a W
film is buried inside of each of the contact holes 22, followed by
the formation, over the silicon oxide film 21, of a drain electrode
24 and a source electrode 25 composed mainly of an aluminum (Al)
alloy film.
[0102] As illustrated in FIG. 16, a silicon oxide film 26 having a
thickness of about 900 nm is deposited over the drain electrode 24
and source electrode 25 by CVD, and, then, a through-hole 27 is
formed by etching a portion of the silicon oxide film 26. Then, an
interconnect 28 composed mainly of an aluminum (Al) alloy film is
formed over the silicon oxide film 26 to connect the interconnect
28 and the drain electrode 24, and the interconnect 28 and the
source electrode 25, respectively. Over the interconnect 28, a
surface protective film 29 is then formed using a silicon oxide
film having a thickness of about 300 nm and a silicon nitride film
having a thickness of about 500 nm by CVD.
[0103] After a portion of the surface protective film 29 is
selectively removed to expose a portion of the interconnect 28 (a
pad portion not illustrated in FIG. 16), the back surface of the
substrate 1 is polished by about 280 nm, and, then, a source rear
electrode 31 is formed on the back surface of the substrate 1. By
the steps so far described, the power amplifier circuit as
illustrated in FIG. 2 is substantially completed. The source rear
electrode 31 is formed, for example, by successively depositing a
nickel (Ni) film having a thickness of about 0.1 .mu.m, a titanium
(Ti) film having a thickness of about 0.15 .mu.m, an Ni film having
a thickness of about 0.1 .mu.m and a gold (Au) film having a
thickness of about 1.3 .mu.m by sputtering. The substrate 1 is
separated into individual semiconductor chip, which are then
soldered onto a module substrate via the source rear electrode
31.
[0104] FIG. 17 shows comparison in the feedback capacitance (Cgd)
and on resistance (Ron) between the power MOSFET of this Embodiment
and the conventional power MOSFET. In the former one, the offset
drain region existing between the gate electrode 7 and the n.sup.+
type drain region 15 has a double offset structure; more
specifically, the n.sup.- type offset drain region 9 close to the
gate electrode 7 is adjusted to have a relatively low impurity
concentration, and the n type offset drain region 13 spaced from
the gate electrode 7 is adjusted to have a relatively high impurity
concentration. The conventional one does not have such a double
offset structure. As illustrated in this diagram, the power MOSFET
according to this Embodiment has reduced feedback capacitance (Cgd)
and reduced on resistance (Ron) compared with the conventional
power MOSFET.
[0105] As a result, as illustrated in FIG. 18, it has been revealed
by actual measurement performed by the present inventors that the
power added efficiency (PAE) of an amplifier circuit using the
power MOSFET of this embodiment is improved by about 2% over that
of the amplifier circuit using the conventional power MOSFET.
[0106] FIG. 19 is a perspective view of an RF power module on which
a semiconductor chip 1A having an amplifier circuit using the power
MOSFET of this Embodiment has been mounted.
[0107] The semiconductor chip 1A is installed in a cavity while the
backside of the substrate 1 is disposed opposite to the main
surface of a module substrate 50. The semiconductor chip 1A is
electrically connected to a transmission line 52 via an Au wire 51.
In addition to the semiconductor chip 1A, a condenser 53 for
impedance matching is connected to the transmission line 52. The Au
wire 51 functions as an inductor, while the transmission line 52
functions as an inductor for impedance matching. The source rear
electrode 31 formed over the backside of the substrate 1 is
soldered onto an electrode 54 for chip mounting. The electrode 54
is electrically and thermally joined with a GND electrode 56 on the
backside of the module substrate 50 via a thermal via 55 in the
module substrate 50. The main surface of the module substrate 50 is
covered with a mold resin 57 and the semiconductor chip 1A and
condenser 53 are sealed therewith.
Embodiment 2
[0108] In the power MOSFET according to Embodiment 1, a p type
sinker layer 4 is formed by embedding a heavily doped p type
polysilicon film inside of the trench 3. The p type sinker layer 4
formed by the present method is advantageous over a sinker layer
formed by ion implantation of an impurity, because the parasitic
resistance of the former one can be made lower than that of the
latter one.
[0109] However, formation of the sinker layer by embedding a
conductive film inside of the trench requires the digging of a deep
trench in the substrate 1 so that it imposes many restrictions on
the process and disturbs free disposal of the sinker layer. More
specifically, for the formation of a sinker layer by embedding a
trench with a conductive film, such as polysilicon film or metal
film, a trench with a high aspect ratio is dug first, and, then, a
conductive film is filled in the trench without a space. The
appearance of voids in the conductive film inside of the trench
disturbs the planarization of the surface of the substrate, which
presumably leads to defects, such as peeling of the film, owing to
the step difference of the sinker layer in various subsequent film
deposition steps. The width of the trench is therefore limited by
the depth of the trench or a conductive film deposition apparatus
employed for the deposition.
[0110] With regard to the plane layout of the sinker layer, a
rectangular shape which has a predetermined width at one side is
most free from defects. In such a shape, the conductive film is
embedded uniformly, because the trench has no regions that are
different in width.
[0111] As illustrated in FIG. 21, on the other hand, when
rectangular trenches cross in an X shape or T shape, the trenches
become wider at the intersection thereof than at the other portion
of the trenches. The trench may have a larger width at this
intersection so that there is a possibility that the conductive
film is not uniformly embedded in the trench and defects such as
peeling of the film occur, as described above. If there is a
conductive film deposition apparatus that is capable of embedding a
conductive film uniformly even in such a widened trench, such an
X-shaped or T-shaped layout can be adopted. Most of the apparatuses
do not have such a capacity. Moreover, in consideration of the
large trench depth of such a sinker layer, the width and distance
of the trenches must be wider than the width of the contact hole to
be connected to the sinker layer.
[0112] In a finger-shaped power MOSFET, when the longitudinal
direction of the sinker layer 4 is arranged in parallel to the
longitudinal direction of the finger, as illustrated in FIG. 22, it
is necessary to arrange a plurality of the sinker layers 4 and
contact holes 22a to be connected thereto in a direction vertical
to the finger in consideration of the mask alignment margin and to
widen both ends in the longitudinal direction by a length
corresponding to the mask overlay accuracy.
[0113] When the longitudinal direction of the sinker layer 4 is
arranged vertical to the longitudinal direction of the finger, as
illustrated in FIG. 23, on the other hand, not the sinker layer 4
and contact hole 22a, but only the sinker layer 4 is widened by a
length corresponding to the mask overlay accuracy. Compared with
the layout of FIG. 22, the area of the sinker layer 4 is wider in
the layout of FIG. 23, resulting in a reduction in the parasitic
resistance of the sinker layer 4. FIG. 24 illustrates a comparison
in the area of the sinker layer 4 as a function of the cell pitch
between the parallel layout of FIG. 22 and the vertical layout of
FIG. 23 when the width of one side of the sinker layer 4 is 0.4
.mu.m and the distance between two adjacent sinker layers 4 is 0.4
.mu.m. As is apparent from this graph, the area of the sinker layer
4 is greater in the vertical layout (solid line) than in the
parallel layout (dashed line), so that in the former case, the
parasitic resistance can be reduced.
[0114] In the layout of the sinker layer 4, as illustrated in FIG.
22, owing to a discrete optimum cell pitch, disposal of the sinker
layers 4 is limited. The width of one side of the sinker layer 4 is
0.4 .mu.m and the distance between two adjacent sinker layers 4 is
0.4 .mu.m. For example, assuming that the cell pitch when one
sinker layer 4 is disposed adjacent to the source and parallel to
the longitudinal direction of the finger is 3.5 .mu.m, the cell
pitch becomes 3.9 .mu.m by an increase in the number of sinker
layers to two.
[0115] In the layout of the sinker layer 4, as illustrated in FIG.
23, on the other hand, the length of the sinker layer 4 in the
longitudinal direction may be changed, depending on the cell pitch.
It is therefore possible to change the cell pitch relatively freely
in view of the surrounding conditions.
[0116] FIG. 25 is a plane layout of the sinker layer 4 when
disposed in a meander form, while FIG. 26 is a plane layout of the
sinker layer 4 when disposed in a mesh form. In these layouts, a
conductive film cannot be embedded so easily as in the layout of
FIG. 23, because of a partial difference in the width of the sinker
layer 4. Since the area of the sinker layer 4 is larger than that
in FIG. 23, however, the parasitic resistance can be reduced
further. Moreover, a change in the cell pitch can be carried out
relatively easily.
Embodiment 3
[0117] FIG. 27 is a fragmentary cross-sectional view of a substrate
1 illustrating a power MOSFET according to this Embodiment. In the
n channel type power MOSFET of this Embodiment, a gate electrode 7
is composed only of an n type polysilicon film, a long trench 32 is
formed in an insulating film over the gate electrode 7, and the
gate electrode 7 is shunted by a plug 23 embedded inside of this
long trench 32. The plug 23 is, similar to the plug 23 embedded
inside of the contact hole 22, made of a metal film composed mainly
of a W film. The long trench 32 has a length almost equal to that
of the gate electrode 7 and extends in parallel to the gate
electrode 7.
[0118] The long trench 32 over the gate electrode 7 is formed in
the following manner. After deposition of a silicon oxide film 21
over the power MOSFET, the silicon oxide film 21 is dry etched
using a photoresist film as a mask. Etching is once terminated on
the surface of the silicon nitride film 21 covering the upper
portion of the gate electrode 7. Then, after dry etching of the
silicon nitride film 21, the silicon oxide film (cap insulating
film 8) below the silicon nitride film 21 is etched, whereby the
long trench 32 reaching the surface of the gate electrode 7 is
formed. In such a manner, by once terminating etching on the
surface of the silicon nitride film 21 covering the upper portion
of the gate electrode 7 and then etching the cap insulating film 8,
an inconvenience such as penetration of the bottom portion of the
long trench 32 through the substrate 1 can be prevented even if the
width of the long trench 32 is made greater than the gate length of
the gate electrode 7. This makes it possible to adjust the width of
the long trench 32 so that it is wider than the gate length of the
gate electrode 7 and to reduce the contact resistance between the
plug 23 to be embedded in the long trench 32 and the gate electrode
7. The plug 23 can be embedded inside of the long trench 32
simultaneously with the embedding of the plug 23 in the contact
hole 22 over the source and drain.
[0119] By shunting the gate electrode 7 with a low resistance plug
23 made of a metal film embedded in the long trench 32 over the
gate electrode 7 and thereby reducing its sheet resistance, the
provision of a first-level or second-level Al alloy interconnect
for shunting the gate electrode 7 becomes unnecessary. This makes
it possible to eliminate a wiring region of an Al alloy
interconnect for shunting, whereby the size of the semiconductor
chip 1A on which the power MOSFET is to be formed can be reduced
and a size reduction of the RF power module can be promoted.
[0120] Moreover, by constituting the gate electrode 7 only from a
single polysilicon film, the gate electrode of the p channel power
MOSFET can be constituted from a p type polysilicon film. This
makes it possible to form the p channel type power MOSFET as a
surface channel type which hardly causes short channel effects, so
that an improvement in the performance of the p channel type power
MOSFET by miniaturization can be promoted.
[0121] Furthermore, by constituting the gate electrode 7 from a
single polysilicon film, a resistor 33 can be formed in the same
semiconductor chip 1A by using this single polysilicon film. In
addition, the gate electrode 7 composed of a single polysilicon
film can be used as one electrode of an MIM (Metal Insulator Metal)
type capacitor. As described above, by constituting the gate
electrode 7 from a single polysilicon film and shunting the gate
electrode 7 with the plug 23 embedded in the long trench 32 over
the gate electrode 7, it is possible to form the resistor 33 or
capacitor easily within the same semiconductor chip 1A and,
therefore, to promote integration of all of the functions of the RF
power module in one chip. In addition, this facilitates the
interconnection layout of the module substrate 50 on which the
semiconductor chip 1A is mounted, so that improvement of power
added efficiency and size reduction of the RF power module can be
promoted.
[0122] The invention completed by the present inventors has been
described specifically based on some embodiments. However, it
should be borne in mind that the present invention is not limited
to or by the specifically described embodiments, but it can be
modified within an extent not departing from the scope of the
invention.
[0123] The power MOSFET according to the invention is suited for
use in an RF power amplifier for mobile phones.
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