U.S. patent application number 12/809558 was filed with the patent office on 2011-09-29 for combined detector.
This patent application is currently assigned to National University Corporation Toyohashi University of Technology. Invention is credited to Junichi Matsuo, Hirokazu Nakazawa, Kazuaki Sawada.
Application Number | 20110236263 12/809558 |
Document ID | / |
Family ID | 40801191 |
Filed Date | 2011-09-29 |
United States Patent
Application |
20110236263 |
Kind Code |
A1 |
Sawada; Kazuaki ; et
al. |
September 29, 2011 |
Combined Detector
Abstract
A combined detector capable of simultaneously detecting both a
value indicating a physical/chemical phenomenon such as a pH value
and the intensity of an energy beam such as light. The combined
detector comprises a physical/chemical phenomenon detecting system
(10) and an energy beam detecting system. The physical/chemical
phenomenon detecting system (10) has a sensing section (21) whose
potential varies with a physical/chemical phenomenon, a charge
supply section (22) for supplying first charge to the sensing
section, a charge supply control section (23) provided between the
sensing section (21) and the charge supply section (22), a first
charge storage section (26) for storing the first charge
transferred from the sensing section (21), and a charge transfer
control section (27) provided between the sensing section (21) and
the first charge storage section (26). The sensing section (21)
includes a semiconductor charge generating portion (15) for
generating the first charge and second charge when receiving an
energy beam such as light. The energy beam detecting system has the
semiconductor charge generating portion (15) and a second charge
storage section (31) adapted to store the second charge generated
by the semiconductor charge generating portion (15) and having an
opposite potential to the first charge storage section (26) with
respect to the sensing section (21).
Inventors: |
Sawada; Kazuaki; (Aichi,
JP) ; Matsuo; Junichi; (Aichi, JP) ; Nakazawa;
Hirokazu; (Aichi, JP) |
Assignee: |
National University Corporation
Toyohashi University of Technology
Toyohashi-shi Aichi
JP
|
Family ID: |
40801191 |
Appl. No.: |
12/809558 |
Filed: |
December 19, 2008 |
PCT Filed: |
December 19, 2008 |
PCT NO: |
PCT/JP2008/073261 |
371 Date: |
June 18, 2010 |
Current U.S.
Class: |
422/82.01 |
Current CPC
Class: |
Y10T 436/143333
20150115; Y10T 436/25375 20150115; G01N 27/4035 20130101; Y10T
436/25 20150115; Y10T 436/11 20150115; G01N 27/4148 20130101; G01N
21/8507 20130101; H01L 27/14643 20130101 |
Class at
Publication: |
422/82.01 |
International
Class: |
G01N 27/00 20060101
G01N027/00; G01N 21/62 20060101 G01N021/62 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 20, 2007 |
JP |
2007-329379 |
Claims
1. A combined detector comprising a chemical and physical
phenomenon detecting system and an energy beam detecting system:
said chemical and physical phenomenon detecting system comprising a
first sensing section changed in potential depending on chemical
and physical phenomenon, a first charge supply section for
supplying a first charge to said first sensing section, a first
charge supply control section formed between said first sensing
section and said first charge supply section, a first charge
storage section for storing said first charge transferred from said
first sensing section, and a first charge transfer control section
formed between said first sensing section and said first charge
storage section, said first sensing section including a
semiconductor charge generating section for generating said first
charge and a second charge by receiving an energy beam including
light, and said energy beam detecting system comprising said
semiconductor charge generating section, and a second charge
storage section for storing said second charge generated in said
semiconductor charge generating section and provided with opposite
potential to said first charge storage section as compared with
said first sensing section.
2. The combined detector according to claim 1, wherein said first
charge is an electron and said second charge is a hole.
3. The combined detector according to claim 1, wherein a buried
channel layer of opposite conductivity to conductivity of a
semiconductor substrate is formed beneath a surface of said
semiconductor substrate in said semiconductor charge generating
section.
4. The combined detector according to claim 1, wherein said first
charge supply section and said first charge storage section are
formed at two opposed sides of said first sensing section, and said
second charge storage section is formed at a remaining side of said
first sensing section.
5. The combined detector according to claim 1, wherein said first
charge supply section and said first charge storage section are
formed at two adjacent sides of said first sensing section, and
said second charge storage section is formed at remaining sides of
said first sensing section.
6. The combined detector according to claim 1, wherein said second
charge storage section is provided with an output gate disposed via
an insulating film and further includes means for reading out a
first charge produced in said output gate by capacitance coupling
corresponding to said second charge stored in said second charge
storage section.
7. The combined detector according to claim 1, comprising: a second
sensing section changed in potential depending on potential of said
second charge storage section, a second charge supply section for
supplying said first charge or said second charge to said second
sensing section, a second charge supply control section formed
between said second sensing section and said second charge supply
section, a third charge storage section for storing said first
charge or said second charge transferred from said second sensing
section, and a second charge transfer control section formed
between said second sensing section and said third charge storage
section, wherein timing of supplying a charge from said second
charge supply section to said second sensing section is
synchronized with timing of supplying a charge from said first
charge supply section to said first sensing section, and timing of
transferring a charge from said second sensing section to said
third charge storage section is synchronized with timing of
transferring a charge from said first sensing section to said first
charge storage section.
8. The combined detector according to claim 1, wherein said
semiconductor charge generating section is doped with a first
conductivity type impurity material, said energy beam detecting
system comprises a reset gate electrode and a well region doped
with said first conductivity type impurity material, and said
second charge storage section is surrounded by said semiconductor
charge generating section, said reset gate electrode, said well
region and said first charge supply control section, and is
provided with opposite potential to said first charge storage
section as compared with said first sensing section.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to a combined detector. The
combined detector detects PH of the same object and light from the
same object, for example.
BACKGROUND OF THE INVENTION
[0002] A single detector for detecting pH value of an object and
light emitted from the object is proposed in patent document 1. The
detector proposed in patent document 1 has a structure combined
with a charge transfer type pH detector and a charge transfer type
light detector to detect pH value and light alternately in time
sequence. Namely, time of detecting pH value and time of detecting
light are a little bit out of synchronization.
[0003] For attaining high S/N ratio, it is desirable to accumulate
charge in the sensing section of the pH detector. If it is assumed
to take 0.1 millisecond to accumulate charge one time, it takes 0.1
second to accumulate charge one hundred times, during which the
sensing section is not secured to detect light.
[0004] If combined detectors are arranged like a matrix, pH
distribution (pH image) and light distribution (light image) of the
object can be detected.
[0005] The following patent documents 2 and 3 are also referred to
as references for the invention. [0006] Patent document 1: Japanese
Patent Application Laid-Open (JP-A) No. 11-201775 [0007] Patent
document 2: JP-A No. 2004-28723 [0008] Patent document 3: JP-A No.
2002-98667
DISCLOSURE OF THE INVENTION
Problems to be Solved by the Invention
[0009] When stirring microbe and fluid including blood etc. are
detected, unless light distribution and pH distribution are
detected simultaneously, the light distribution and the pH
distribution are detected substantially in different areas. Thus,
the difference between the light distribution and the pH
distribution in time sequence hinders exact detection of moving
object.
[0010] An object of the invention is to provide a combined detector
for detecting physical and chemical phenomenon value and quantity
of energy beam including light beam simultaneously.
Means for Solving the Problems
[0011] For attaining the object, inventors thought of the present
invention by hard study. Namely, a first aspect of the present
invention is defined as the following.
[0012] A combined detector comprising a chemical and physical
phenomenon detecting system and an energy beam detecting
system,
[0013] the chemical and physical phenomenon detecting system
comprising a first sensing section changed in potential depending
on chemical and physical phenomenon, a first charge supply section
for supplying a first charge to the first sensing section, a first
charge supply control section formed between the first sensing
section and the first charge supply section, a first charge storage
section for storing the first charge transferred from the first
sensing section, and a first charge transfer control section formed
between the first sensing section and the first charge storage
section, the first sensing section including a semiconductor charge
generating section for generating the first charge and a second
charge by receiving energy beam including light, and
[0014] the energy beam detecting system comprising the
semiconductor charge generating section, and a second charge
storage section for storing the second charge generated in the
semiconductor charge generating section and provided with opposite
potential to the first charge storage section as compared with the
first sensing section.
[0015] According to the first aspect of the combined detector, when
the first charge is stored in the first charge storage section of
the chemical and physical phenomenon detecting system, the second
charge is stored independently in the second charge storage section
of the energy beam detecting system. In other words, while the
first charge corresponding to chemical and physical phenomenon
value (for example, pH value) detected by the chemical and physical
phenomenon detecting system is stored in the first charge storage
section, the second charge corresponding to quantity (for example,
intensity) of energy beam (for example, light) is stored
simultaneously and continuously in the second charge storage
section.
[0016] Therein, the first charge may be an electron or a hole. On
the other hand, the second charge may be a hole or an electron. As
defined in the second aspect of the present invention, in the
chemical and physical phenomenon detecting system necessitating
accumulated detections, an electron which enables a rapid transfer
operation is preferred as the first charge. Accordingly, a hole is
preferred for storage in the second charge storage section of the
energy beam detecting system.
[0017] The third aspect of the present invention is defined as the
following. Namely, in the combined detector according to the first
aspect or the second aspect, a buried channel layer of opposite
conductivity to conductivity of a semiconductor substrate is formed
beneath a surface of the semiconductor substrate in the
semiconductor charge generating section.
[0018] Therein, when a p-type semiconductor substrate is used, an n
layer is disposed at least in the sensing section as the buried
channel layer beneath the surface of the substrate. Since the
buried channel layer is formed, a potential profile as shown in
FIG. 1 is obtained.
[0019] Therein, an electron produced by photoelectric effect moves
to a conduction band, and a hole moves to a valence band. Since an
electron moves to a higher potential, the electron moves to a
potential well. Reversely, a hole moves to a lower potential. A
hole produced remotely from a surface (S) of the substrate runs
away to the right direction (back surface of the substrate) shown
in FIG. 1. On the other hand, a hole produced near to the surface
(S) of the substrate (nearer to the surface (S) of the substrate
than a valley (V) of potential) is stored in the top of potential.
Such a hole can be read out as output of light.
[0020] As described above, a thickness of the buried channel layer
(namely, depth of the layer doped with n-type dopant) is equal to
or larger than a thickness into which the energy beam reaches.
[0021] The fourth aspect of the present invention is defined in the
following. Namely, in the combined detector according to any one
selected from the first aspect to the third aspect, the first
charge supply section and the first charge storage section are
formed at two opposed sides of the first sensing section, and the
second charge storage section is formed at a remaining side of the
first sensing section.
[0022] According to the combined detector defined above, since a
versatile structure for a chemical and physical phenomenon
detecting system is applied, fabrication process can be carried out
easily.
[0023] The fifth aspect of the present invention is defined in the
following.
[0024] Namely, in the combined detector according to any one
selected from the first aspect to the third aspect, the first
charge supply section and the first charge storage section are
formed at two adjacent sides of the first sensing section, and the
second charge storage section is formed at remaining adjacent sides
of the first sensing section.
[0025] According to the combined detector defined above, the second
charge storage section is formed at the remaining adjacent sides.
The second charge storage section formed at the remaining adjacent
sides may have a continuous body. So, the second charge storage
section secures a larger total volume to realize wider dynamic
range for detection of energy beam.
[0026] The sixth aspect of the present invention is defined in the
following.
[0027] Namely, in the combined detector according to any one
selected from the first aspect to the fifth aspect, the second
charge storage section is provided with an output gate disposed via
an insulating film and further includes means for reading out first
charge produced in the output gate by capacitance coupling
corresponding to the second charge stored in the second charge
storage section.
[0028] The first charge (corresponding to the second charge stored
in the second charge storage section) read out above is converted
into voltage for output via a source-follower circuit with a simple
structure, for example. Namely, according to the sixth aspect of
the combined detector, a quantity of the energy beam can be
detected based on quantity of the second charge stored in the
second charge storage section.
[0029] The seventh aspect of the present invention is defined in
the following.
[0030] Namely, in the combined detector according to any one
selected from the first aspect to the fifth aspect, there provided
with a second sensing section changed in potential depending on
potential of the second charge storage section, a second charge
supply section for supplying the first charge or the second charge
to the second sensing section, a second charge supply control
section formed between the second sensing section and the second
charge supply section, a third charge storage section for storing
the first charge or the second charge transferred from the second
sensing section, and a second charge transfer control section
formed between the second sensing section and the third charge
storage section,
[0031] wherein timing of supplying a charge from the second charge
supply section to the second sensing section is synchronized with
timing of supplying a charge from the first charge supply section
to the first sensing section, and timing of transferring a charge
from the second sensing section to the third charge storage section
is synchronized with timing of transferring a charge from the first
sensing section to the first charge storage section.
[0032] According to the seventh aspect of the present invention,
since potential of the second charge storage section (depending on
the second charge stored therein) is detected by a charge transfer
type potential sensor, quantity of the charge stored in the second
charge storage section is detected exactly.
[0033] Then, since the charge transfer type potential sensor is
provided with the same structure as, or similar structure to that
of the chemical and physical phenomenon detecting system,
fabrication process thereof can be carried out easily.
[0034] Further, synchronized with both the operation timings, the
seventh aspect of the combined detector can be controlled
easily.
BRIEF DESCRIPTION OF THE DRAWINGS
[0035] FIG. 1 is a view explaining movement of holes in a sensing
section.
[0036] FIG. 2 is a plan view of a combined detector of one
embodiment.
[0037] FIG. 3 is a view explaining a structure and operation of the
combined detector shown in FIG. 2.
[0038] FIG. 4 shows a cross sectional structure taken on line E-E
in FIG. 2.
[0039] FIG. 5 shows a structure of a source-follower circuit
converting detected result of the combined detector into output
voltage.
[0040] FIG. 6 shows another output converting means of detected
result of the combined detector.
[0041] FIG. 7 is a plan view of a combined detector of another
embodiment.
[0042] FIG. 8 is a plan view of a combined detector of another
embodiment.
DESCRIPTION OF THE REFERENCE NUMERALS
[0043] 1, 200, 300 Combined detector [0044] 11 Semiconductor
substrate [0045] 13 Insulating film [0046] 10 pH detecting system
[0047] 21 Sensing section [0048] 22 Charge supply section [0049] 23
Charge supply control section [0050] 26 First charge storage
section [0051] 27 Charge transfer control section [0052] 31 Second
charge storage section
EMBODIMENTS
[0053] FIG. 2 shows a plan view of a combined detector 1 of an
embodiment of the present invention. A sectional view taken on line
C and a sectional view taken on line D in FIG. 2 are shown in FIG.
3A. A sectional view taken on line E is shown in FIG. 4.
[0054] The combined detector 1 shown in FIG. 2 comprises a pH
detecting system 10 and a light detecting system 30.
[0055] The pH detecting system 10 is formed along the C-line. The
structure of such the pH detecting system 10 is similar to that of
a conventional pH detecting system. Namely, as shown in FIG. 3A, an
n layer and an n+ layer are formed on the surface of a (p type)
silicon substrate 11. On the surface of the silicon substrate 11, a
silicon oxide film (insulating film) 13 is formed. On such the
insulating film 13, a metal film is patterned to form various kinds
of electrodes. The n layer corresponds to a buried channel layer
15.
[0056] In FIG. 3A, numeral 21 indicates a sensing section, numeral
22 indicates a charge supply section, and numeral 23 indicates a
charge supply control section.
[0057] In the sensing section 21, on the surface of the insulating
film 13, a concave portion is formed to contact a detected object
on wet condition, with a reference electrode 25 disposed. In the
sensing section 21, beneath the surface of the substrate 11, the
buried channel layer (n layer) is formed.
[0058] When such the sensing section 21 contacts the detected
object, potential varies with pH of the detected object. In
addition, when light is incident on the sensing section 21,
electrons and holes are generated by photoelectric effect. Herein,
as the buried channel layer is formed in the sensing section 21, a
portion of the holes are accumulated to the top of the potential
beneath the surface of the substrate, as described above (as
referred to FIG. 1). On the other hand, the electrons enter into a
potential well formed according to pH.
[0059] The charge supply section 22 provided with an n+ region is
connected to an input diode ID. A charge supply control section 23
is disposed between the sensing section 21 and the charge supply
section 22. In the charge supply control section 23, the
semiconductor substrate 11 is faced with an input control gate
electrode ICG through the insulating film 13. A predetermined
voltage is applied to the gate electrode ICG to form a potential
wall between the charge supply section 22 and the sensing section
21.
[0060] A second input control gate electrode ICG controllable
independently may be formed between the sensing section 21 and the
input control gate electrode ICG. In the sensing section 21, a
continuous potential well may be formed by the second input control
gate, to absorb electrons remaining in the sensing section 21 into
the continuous potential well.
[0061] In FIG. 3A, numeral 26 indicates the first charge storage
section, and numeral 27 indicates a charge transfer control section
27. The first charge storage section 26 is also referred to as a
floating diffusion region and provided with an n+ region of the
substrate 11.
[0062] The charge transfer control section 27 is disposed between
the sensing section 21 and the first charge storage section 26. In
the charge transfer control section 27, the semiconductor substrate
11 is faced with a transfer gate electrode TG through the
insulating film 13. A predetermined voltage is applied to the
transfer gate electrode TG to form a potential wall between the
sensing section 21 and the first charge storage section 26. Then,
by change of the height of the potential wall, the charges in the
sensing section 21 are transferred to the first charge storage
section 26.
[0063] Electrons stored in the first charge storage section 26 are
read out via a source-follower circuit shown in FIG. 5 at a
predetermined timing and converted into output voltage Vout.
Namely, as the gate voltage of a MOS transistor changes according
to the charges stored in the first charge storage section 26,
current flowing through a resistor changes. As a result, the output
voltage Vout also changes.
[0064] A reset gate electrode RG and a reset diode are used for
resetting the charges of the first charge storage section 26.
[0065] In FIG. 2, the light detecting system 30 is formed along
line D.
[0066] Numeral 31 shown in FIG. 3A indicates the second charge
storage section. In view of potential of the sensing section 21,
potential of the second charge storage section 31 is opposite to
that of the first charge storage section 26. Therefore, among holes
produced beneath the surface of the sensing section 21 by
photoelectric effect, holes near to the second charge storage
section 31 are stored in the second charge storage section 31 (as
referred to FIG. 1).
[0067] In the second charge storage section 31, the semiconductor
substrate 11 is faced with a floating gate electrode FG via the
insulating film 13.
[0068] Numeral 33 indicates an n+ region.
[0069] The sectional view taken on line E in FIG. 2 is shown in
FIG. 4.
[0070] As shown in FIG. 4, the second charge storage section 31 is
disposed between an input control gate electrode ICG with
comparatively high potential and a reset gate electrode RG2. By
potential wells 36 and 37 produced by these electrodes and a
potential well produced by the n+ region 33, the second charge
storage section 31 is independent of other regions. In other words,
holes can be stored in anytime.
[0071] The floating gate electrode FG is opposed via the insulating
film (thin film) 13 to the surface of the semiconductor substrate
which stores holes. In the floating gate electrode FG, electrons
are produced by capacitance coupling. These electrons are read out
by the source-follower circuit shown in FIG. 5 and converted into
the output voltage Vout. Namely, as the gate voltage of a MOS
transistor varies with the charges stored in the floating gate
electrode FG, current flowing through the resistor changes. As a
result, output voltage Vout also changes.
[0072] Next, operation of the combined detector of the embodiment
is explained (with reference to FIG. 3).
[0073] In FIG. 3B, as a result of the previous detection, electrons
remains in the first charge storage section 26, and holes are
stored in the second charge storage section 31.
[0074] Following such a state, each of charges stored in the first
charge storage section 26 and charges stored in the floating gate
electrode FG is read out by each of the source-follower circuits
connected to each of the first charge storage section and the first
charge storage section to obtain each of output voltage Vout.
[0075] Then, as shown in FIG. 3C, the potential of the reset gate
electrode RG is controlled to discharge the charges stored in the
first charge storage section 26 from the reset diode RD to the
outside. On the other hand, as to the holes stored in the second
charge storage section, the potential of the second reset gate
electrode RG2 is controlled to extinguish the potential well 37.
Therefore, the holes diffuse beneath the surface of the substrate
and disappear.
[0076] As a result, the combined detector 1 is reset.
[0077] In FIG. 3D, operation of detecting new pH value and light is
resumed.
[0078] In FIG. 3D, electrons overflow the charge supply section 22
to fill the sensing section 21 with electrons. Next, as shown in
FIG. 3E, when electrons are reduced in the charge supply section
22, electrons in the sensing section 21 are separated from by the
potential wall of the charge supply control section 23, so that a
quantity of electrons corresponding to the depth of the potential
(which is dependent on pH) remain in the sensing section 21.
[0079] In FIG. 3F, the potential of the transfer gate electrode TG
is controlled to transfer electrons remaining in the sensing
section 21 to the first charge storage section 26 which stores the
electrons.
[0080] Repeating operations shown in FIGS. 3D-3F, electrons are
accumulated in the first charge storage section.
[0081] During time (for repeating the operations shown in FIGS.
3D-3F), holes produced by light incident on the sensing section 21
are stored continuously in the second charge storage section 31.
The quantity of holes produced is proportional to the quantity of
light incident on. Namely, when a pH value is detected, the
quantity of light incident on the sensing section is detected
simultaneously.
[0082] In such a state, if each of charges stored in the first
charge storage section 26 and charges stored in the floating gate
electrode FG is read out by each of the source-follower circuits
connected to each of the first charge storage section 26 and the
floating gate electrode FG, output voltage Vout corresponding to pH
value and output voltage Vout corresponding to the quantity of
light incident on the sensing section during the pH value detection
are obtained simultaneously
[0083] FIG. 6 shows another system which detects a charge in the
floating gate electrode FG. In FIG. 6, the same element as that of
FIG. 2 is referred to with the same reference numeral of FIG. 2 and
the description thereof is eliminated. In FIG. 6, numeral 121
indicates a charge detecting section.
[0084] In this example, the quantity of the charge stored in the
floating gate electrode FG is detected by a versatile physical and
chemical phenomenon detecting device. In such a versatile
physical/chemical phenomenon detecting device, a kind of structure
similar to that of the pH detecting system 10 of the embodiment is
provided. Thereby, the manufacturing process is utilized in common
to reduce manufacturing cost.
[0085] In the detecting device of FIG. 6, it is desirable to
synchronize timing of supplying charges and timing of transferring
the charges with timings thereof in the combined detector 1 shown
in FIG. 2. Further, it is desirable to reset once holes stored in
the second charge storage section 31 by switching on the second
reset gate electrode RG2 at timing of transferring the charges (as
referred to FIG. 6F). Therefore, it is made possible to synchronize
operation of detecting pH value with operation of detecting light
more precisely.
[0086] FIG. 7 shows a combined detector of another embodiment 200.
In FIG. 7, the same element as that of FIG. 2 is referred to with
the same reference numeral of FIG. 2 and the description thereof is
eliminated.
[0087] In the combined detector 1 shown in FIG. 2, as to the
sensing section 21 of the shape of a rectangle, the charge supply
section and the charge supply control section are disposed at the
one side of the opposed sides of the rectangle, and the first
charge storage section and the charge transfer control section are
disposed at the other side of the opposed sides of the rectangle,
and the second charge storage section is disposed at another side
of the rectangle.
[0088] In the embodiment shown in FIG. 7, the second charge storage
sections are disposed at the two sides of the opposed sides of the
rectangle. Namely, as compared with FIG. 2, the second floating
gate electrode FG2, the third reset gate electrode RG3, and the
second n+ region are formed along the lower side of the sensing
section 21.
[0089] The second floating gate electrode FG2 is connected with the
source-follower circuit shown in FIG. 5 or the detecting device
shown in FIG. 6.
[0090] FIG. 8 shows a combined detector of another embodiment 300.
In FIG. 8, the same element as that of FIG. 2 is referred to with
the same reference numeral of FIG. 2 and the description thereof is
eliminated.
[0091] In the embodiment shown in FIG. 8, as to the sensing section
21 of the shape of a rectangle, the charge supply section and the
charge supply control section are disposed at the one side of
adjacent sides of the sensing section, and the first charge storage
section and the charge transfer control section are disposed at the
other side of the adjacent sides of the sensing section, and the
second charge storage section is disposed at the remaining two
sides of the sensing section 21.
[0092] According to such a structure, the second charge storage
section secures a larger total volume to store more holes, which
realizes wider dynamic range. In the embodiment shown in FIG. 8, as
one integrated floating gate is provided in the combined detector,
the structure of the combined detector is more simplified to make
the combined detector small, as compared with the embodiment shown
in FIG. 7.
[0093] In each of the combined detectors of the embodiments
explained above, it is desired to dispose electrodes and high
density doped regions in the periphery of the sensing section and
rectilinearly from the sensing section. Accordingly, the combined
detectors of the present invention are suitable for an integrated
array to enable to image precisely each distribution of pH value
and quantity of light of the object detected at the same time.
[0094] The present invention is not limited to the illustrated
embodiments or examples alone, but may be changed or modified
within the scope easily devised by those skilled in the art without
departing from the spirit of the present invention.
* * * * *