U.S. patent application number 12/709289 was filed with the patent office on 2011-08-25 for shielding structure for transmission lines.
Invention is credited to Shuxian Chen, Jeffrey T. Watt.
Application Number | 20110204493 12/709289 |
Document ID | / |
Family ID | 44358544 |
Filed Date | 2011-08-25 |
United States Patent
Application |
20110204493 |
Kind Code |
A1 |
Chen; Shuxian ; et
al. |
August 25, 2011 |
SHIELDING STRUCTURE FOR TRANSMISSION LINES
Abstract
A shielding structure comprises first and second comb-like
structures defined in a first metallization layer on an integrated
circuit, each comb-like structure comprising a plurality of teeth,
the teeth of each comb-like structure extending toward the other
comb-like structure; a first plurality of electrically conducting
vias extending upward from the first comb-like structure; a second
plurality of electrically conducting vias extending upward from the
second comb-like structure; first and second planar structures in a
second metallization layer above the first metallization layer; a
third plurality of electrically conducting vias extending downward
from the first planar structure toward the first plurality of
electrically conducting vias; and a fourth plurality of
electrically conducting vias extending downward from the second
planar structure toward the second plurality of electrically
conducting vias. The first and second comb-like structures, the
first and second planar structures and the first, second, third,
and fourth electrically conducting vias all being at substantially
the same potential, preferably ground. In one embodiment, one or
more signal lines are located in the second metallization layer
between the first and second planar structures; and in another
embodiment they are located in a third metallization layer between
the first and second metallization layers.
Inventors: |
Chen; Shuxian; (Fremont,
CA) ; Watt; Jeffrey T.; (Palo Alto, CA) |
Family ID: |
44358544 |
Appl. No.: |
12/709289 |
Filed: |
February 19, 2010 |
Current U.S.
Class: |
257/659 ;
257/E23.141 |
Current CPC
Class: |
H01L 23/5225 20130101;
H01L 2924/0002 20130101; H01L 29/92 20130101; H01L 2924/0002
20130101; H01L 2924/00 20130101; H01L 23/552 20130101 |
Class at
Publication: |
257/659 ;
257/E23.141 |
International
Class: |
H01L 23/52 20060101
H01L023/52 |
Claims
1. A shielding structure comprising: first and second comb-like
structures defined in a first metallization layer on an integrated
circuit, each comb-like structure comprising a plurality of teeth,
the teeth of each comb-like structure extending toward the other
comb-like structure; a first plurality of electrically conducting
vias extending upward from the first comb-like structure; a second
plurality of electrically conducting vias extending upward from the
second comb-like structure; first and second planar structures in a
second metallization layer above the first metallization layer; a
third plurality of electrically conducting vias extending downward
from the first planar structure toward the first plurality of
electrically conducting vias; and a fourth plurality of
electrically conducting vias extending downward from the second
planar structure toward the second plurality of electrically
conducting vias, said first and second comb-like structures, said
first and second planar structures and said first, second, third,
and fourth electrically conducting vias all being at substantially
the same potential.
2. The shielding structure of claim 1 wherein the teeth of each
comb-like structure extend between the teeth of the other comb-like
structure.
3. The shielding structure of claim 1 wherein the electrically
conducting vias of the first plurality of vias extend between the
electrically conducting vias of the third plurality of vias.
4. The shielding structure of claim 1 further comprising a first
signal line located in the second metallization layer between the
first and second planar structures.
5. The shielding structure of claim 1 further comprising first and
second signal lines located in the second metallization layer
between the first and second planar structures.
6. The shielding structure of claim 1 wherein at least one of the
planar structures is a comb-like structure.
7. The shielding structure of claim 1 wherein the first and second
planar structures are third and fourth comb-like structures, each
comb-like structure comprising a plurality of teeth, the teeth of
the third comb-like structure and the teeth of the fourth comb-like
structure extending toward each other.
8. The shielding structure of claim 7 wherein at least one signal
line is located in a third metallization layer between the first
and second metallization layers.
9. The shielding structure of claim 7 wherein a first signal line
is located in a third metallization layer between the first and
second metallization layers and a second signal line is located in
a fourth metallization layer between the first and second
metallization layers.
10. A shielding structure comprising: first and second arrays of
conductive elements defined in a first metallization layer on an
integrated circuit, the conductive elements of the first array
being connected together and extending between the conductive
elements of the second array, the conductive elements of the second
array being connected together; a first plurality of electrically
conducting vias extending upward from the first array; a second
plurality of electrically conducting vias extending upward from the
second array; first and second planar structures in a second
metallization layer above the first metallization layer; a third
plurality of electrically conducting vias extending downward from
the first planar structure toward the first plurality of
electrically conducting vias; and a fourth plurality of
electrically conducting vias extending downward from the second
planar structure toward the second plurality of electrically
conducting vias, said first and second arrays, said first and
second planar structures and said first, second, third, and fourth
electrically conducting vias all being at substantially the same
potential.
11. The shielding structure of claim 10 wherein the electrically
conducting vias of the first plurality of vias extend between the
electrically conducting vias of the second plurality of vias.
12. The shielding structure of claim 10 further comprising a first
signal line located in the second metallization layer between the
first and second planar structures.
13. The shielding structure of claim 10 further comprising first
and second signal lines located in the second metallization layer
between the first and second planar structures.
14. The shielding structure of claim 10 wherein the first and
second planar elements are third and fourth arrays of conductive
elements defined in the second metallization layer, the conductive
elements of the third array being connected together and extending
between the conductive elements of the fourth array, the conductive
elements of the fourth array being connected together.
15. The shielding structure of claim 14 wherein at least one signal
line is located in a third metallization layer between the first
and second metallization layers.
16. The shielding structure of claim 14 wherein a first signal line
is located in a third metallization layer between the first and
second metallization layers and a second signal line is located in
a fourth metallization layer between the first and second
metallization layers.
17. A shielding structure comprising: first and second arrays of
conductive elements defined in a first metallization layer on an
integrated circuit, the conductive elements of the first array
being connected together and extending between the conductive
elements of the second array, the conductive elements of the second
array being connected together; third and fourth arrays of
conductive elements in a second metallization layer above the first
metallization layer, the conductive elements of the third array
being connected together and extending between the conductive
elements of the fourth array, the conductive elements of the fourth
array being connected together; and at least one signal line
located in a third metallization layer between the first and second
metallization layers, the first, second, third, and fourth arrays
of conductive elements all being at substantially the same
potential.
18. The shielding structure of claim 17 wherein the conductive
elements in at least one array of conductive elements are connected
together in a comb-like structure.
19. The shielding structure of claim 17 further comprising a second
signal line located in a fourth metallization layer between the
first and second metallization layers.
20. The shielding structure of claim 17 further comprising a second
signal line located in the third metallization layer.
Description
BACKGROUND OF THE INVENTION
[0001] This relates to shielding structures formed in the back end
of integrated circuits.
[0002] A typical integrated circuit comprises a semiconductor
substrate in and on which are defined a multitude of transistors
and a series of metal interconnect layers on top of the substrate.
The interconnect layers are insulated from one another by
intermetallic dielectric layers. Interconnection paths are defined
in the metallic layers and selective connections are made between
the paths in the various layers so as to connect the transistors
formed in the substrate to each other and to external connections.
For additional information, see, for example, Plummer et al,
Silicon VLSI Technology, ch. 11 (Prentice Hall, 2000); Doering et
al (ed.), Handbook of Semiconductor Manufacturing Technology
(2.sup.nd ed.) (CRC Press 2008).
[0003] In recent years, the frequencies of signals transmitted on
some of the interconnection paths of an integrated circuit have
risen into the GigaHertz (GHz) range. At these frequencies, it
becomes desirable to shield the interconnection path; and shielding
structures used for many years in conventional microwave technology
have been adapted for use in integrated circuits. FIGS. 1A-1F
depict cross-sections of several conventional shielding structures.
In the transverse section of FIG. 1A, a microstrip 10 comprises a
signal line 12 located above and insulated from a ground plane 14
that provides a current return path. In other embodiments, a pair
of transmission lines may be used in place of a single signal line
to provide differential-type signaling. When implemented in an
integrated circuit, the signal line 12 is defined in one
metallization layer, the ground plane 14 is defined in a second
metallization layer and the signal line and ground plane are
separated by at least one intermetallic dielectric layer.
Illustratively, ground plane 14 may be a continuous two-dimensional
sheet with no openings in it or may comprise a plurality of metal
strips connected together at each end in a ladder-like
configuration as shown in the horizontal section of FIG. 1B. Other
patterns of connected metallization may also be used; and in some
cases the ground plane can be the silicon substrate.
[0004] In the transverse section of FIG. 1C, a co-planar waveguide
(CPW) 20 comprises a signal line 22 located between two ground
planes 24, 25. When implemented in an integrated circuit, the
signal line and ground planes of the coplanar waveguide are all
implemented in the same metallization layer and insulated from the
substrate of the integrated circuit by at least one intermetallic
dielectric layer. Again, each ground plane may be a continuous
two-dimensional sheet with no openings or it may comprise a
ladder-like array of connected strips as shown in FIG. 1B. Other
patterns of connected metallization may also be used.
[0005] In the transverse section of FIG. 1D, a grounded co-planar
waveguide (GCPW) 30 comprises a signal line 32 located between two
ground planes 34, 35 and above a third ground plane 36. The ground
planes 34, 35 are electrically connected to ground plane 36 by
electrically conductive sidewalls 38, 39. When implemented in an
integrated circuit, signal line 32 and ground planes 34, 35 are
defined in a first metallization layer, ground plane 36 is defined
in a second metallization layer beneath the first layer, and the
first and second metallization layers are separated by at least one
intermetallic dielectric layer. Illustratively, ground plane 36 may
be a continuous two-dimensional sheet with no openings or it may
comprise a ladder-like array of connected strips as shown in FIG.
1B or another pattern of connected metallization. The sidewalls are
formed using stacks of vias that extend between the upper and lower
metallization layers. As shown in the lateral section of FIG. 1E, a
first plurality of electrically conducting via stacks 138 form a
sidewall that connects upper ground plane 34 to lower ground plane
36 and a second plurality of electrically conducting via stacks
similar to that of FIG. 1E forms a sidewall that connects upper
ground plane 35 to lower ground plane 36. Additional rows of
electrically conducting vias may be connected in parallel to
connect the upper and lower ground planes.
[0006] In the transverse section of FIG. 1F, a stripline 50
comprises a signal line 52 located between an upper ground plane 54
and a lower ground plane 56. Optionally, the upper and lower ground
planes are electrically connected by electrically conductive
sidewalls 58, 59 so that the signal line is in the center of the
region enclosed by the ground planes and sidewalls. When stripline
50 is implemented in an integrated circuit, signal line 52 is
defined in one metallization layer, ground plane 54 is defined in a
second metallization layer above it and ground plane 56 is defined
in a third metallization layer below it. Optionally, a first
plurality of electrically conducting vias form a sidewall that
connects upper ground plane 54 to lower ground plane 56 on one side
of the signal line 52; and a second plurality of electrically
conducting vias form a sidewall that connects upper ground plane 54
to lower ground plane 56 on the other side of signal line 52.
Again, the ground planes may be continuous two-dimensional sheets
with no openings or ladder-like arrays of connected strips as shown
in FIG. 1B or some other pattern of connected metallization; and
the vias may be similar to those shown in FIG. 1E. The advantages
and disadvantages of several types of integrated circuit
transmission lines are discussed, for example, at S. Pellerano et
al., "A 64 GHz LNA with 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS,"
IEEE J. of Solid-State Circuits, Vol. 43, No. 7. pp. 1543-52 (July
2008)
SUMMARY OF THE PRESENT INVENTION
[0007] The present invention is an improved shielding structure
that can be implemented in the metallization layers of an
integrated circuit. The improved shielding structure reduces
parasitic coupling between the transmission line(s) and the
shielding structure with the result that the shielding structure
has lower insertion loss than prior art shielding structures.
Further, it has a better signal/noise ratio.
[0008] In a preferred embodiment of the invention, the shielding
structure comprises: first and second comb-like structures defined
in a first metallization layer on an integrated circuit, each
comb-like structure comprising a plurality of teeth, the teeth of
each comb-like structure extending toward the other comb-like
structure; a first plurality of electrically conducting vias
extending upward from the first comb-like structure; a second
plurality of electrically conducting vias extending upward from the
second comb-like structure; first and second planar structures in a
second metallization layer above the first metallization layer; a
third plurality of electrically conducting vias extending downward
from the first planar structure toward the first plurality of
electrically conducting vias; and a fourth plurality of
electrically conducting vias extending downward from the second
planar structure toward the second plurality of electrically
conducting vias. At least one signal line is located in the second
metallization layer between the first and second planar structures;
and the first and second comb-like structures, the first and second
planar structures and the first, second, third, and fourth
electrically conducting vias are all at substantially the same
potential, which preferably is ground.
[0009] Numerous variations may be practiced in the preferred
embodiment. For example, a pair of signal lines may be used to
carry differential-type signals; the first and second planar
structures may also be comb-like structures; and multiple rows of
electrically conducting vias may extend from the planar structures
and/or the comb-like structures.
[0010] While the preferred embodiment may be regarded as a
modification of a grounded co-planar waveguide, the invention may
also be practiced in other types of waveguides such as microstrips
and striplines.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] These and other objects and advantages of the present
invention will be apparent to those of ordinary skill in the art in
view of the following detailed description in which:
[0012] FIGS. 1A-1F are cross-sections of illustrative prior art
waveguide structures;
[0013] FIG. 2 is a perspective view of an illustrative embodiment
of the invention;
[0014] FIG. 3 is a cross-section along line 3-3 of FIG. 2;
[0015] FIG. 4 is a cross-section along line 4-4 of FIG. 2;
[0016] FIG. 5 is a perspective view of a second embodiment of the
invention;
[0017] FIG. 6 is a plot of transmission loss versus operating
frequency for the shielding structure of the present invention and
a prior art shielding structure; and
[0018] FIGS. 7 and 8 are horizontal sections of alternatives that
may be used in the practice of the invention.
DETAILED DESCRIPTION
[0019] FIG. 2 is a perspective view of an illustrative embodiment
of a shielding structure 200 of the present invention; and FIGS. 3
and 4 are cross-sections along lines 3-3 and 4-4, respectively, of
FIG. 2. Shielding structure 200 is formed in an integrated circuit
in a plurality of metallization layers 211-214 on a semiconductor
substrate 220. The metallization layers are separated from each
other and from substrate 220 by intermetallic dielectric layers
231-234 (shown in FIG. 4 but not shown in FIG. 2 for reasons of
clarity). Shielding structure 200 comprises first and second
comb-like structures 240, 245 defined in first metallization layer
211, each comb-like structure comprising first and second
pluralities of teeth 242, 247 that extend toward the other
comb-like structure; a first plurality of electrically conducting
vias 250 that extend upward from the first comb-like structure 240;
a second plurality of electrically conducting vias 255 that extend
upward from the second comb-like structure 245; first and second
planar structures 260, 265 in a second metallization layer 214
above the first metallization layer; a third plurality of
electrically conducting vias 270 that extend downward from the
first planar structure 260 toward the first plurality of
electrically conducting vias 250; and a fourth plurality of
electrically conducting vias 275 that extend downward from the
second planar structure 265 toward the second plurality of
electrically conducting vias, 255. Signal lines 280, 282 are
located in metallization layer 214 between the first and second
planar structures. The first and second comb-like structures, the
first and second planar structures, and the first, second, third
and fourth electrically conducting vias are all at the same
potential, preferably ground.
[0020] Preferably, the metallization layers are the uppermost
metallization layers of an integrated circuit. By way of example
but not limitation, metallization layer 214 might be the uppermost
layer of the integrated circuit while metallization layer 211 might
be several layers below it, the number of layers depending on
various design criteria. In other cases, metallization layer 214
might not be the uppermost layer of the integrated circuit.
[0021] A horizontal cross-section of metallization layer 211 along
line 3-3 of FIG. 2 is shown in FIG. 3. As shown therein, the first
comb-like structure 240 comprises a first plurality of teeth 242;
and the second comb-like structure 245 comprises a second plurality
of teeth 247. The teeth are parallel to one another. The teeth of
the first plurality are connected together by a first transverse
element 244; and the teeth of the second plurality are connected
together by a second transverse element 249. As shown in FIG. 3,
the teeth of the first comb-like structure 240 extend between the
teeth of the second comb-like structure 240 but they do not contact
the teeth of the second comb-like structure. However, as indicated
above, the teeth are at the same potential. To accomplish this, an
electrical connection is maintained between the two comb-like
structures if only through the ground connection. Alternatively,
one or a small number (.ltoreq.10%) of the teeth of the two
comb-like structures may be directly connected together (not
shown).
[0022] The comb-like structures 240, 245 are formed by defining the
structures in metallization layer 211 using well-known etching
technology to define the appropriate patterns in the metallization
layer.
[0023] A vertical cross-section through vias 250, 270 along line
4-4 of FIG. 2 is shown in FIG. 4. The vertical cross-section
through vias 255, 275 is similar. As shown in FIG. 4, vias 250
extend upward in stacks 252 from metallization layer 211, through
intermetallic dielectric layer 232, metallization layer 212, and
intermetallic dielectric layer 233 to metallization layer 213.
Thus, stacks 252 do not reach metallization layer 214. Vias 270
extend downward in stacks 272 from metallization layer 214, through
intermetallic dielectric layer 234, metallization layer 213, and
intermetallic dielectric layer 233 to metallization layer 212.
Thus, stacks 272 do not reach metallization layer 211. In addition,
while stacks 252 extend between stacks 272, they do not contact
each other at metallization layers 212 or 213. However, as
indicated above, vias 250 and vias 270 are at the same potential.
To accomplish this, some of vias 250, 270 may be connected to each
other by extending the via stack to the appropriate metallization
layer or by connecting the stacks by metallization layers 212
and/or 213. Only a small number (.ltoreq.10%) of vias relative to
the total number of vias should be connected in this way.
Alternatively, the vias may be connected together through the
ground connection.
[0024] The vias are formed by conventional semiconductor processes
in which holes are etched in an intermetallic dielectric layer down
to the metallic layer immediately below and the holes are then
filled with a conducting material such as aluminum or copper. Well
known processes are then used to form the next metallic layer on
top of the dielectric layer so that it is electrically connected to
the filled holes; and this layer is then etched to separate the via
stacks. A dielectric layer is then formed on the metallic layer;
and the process is repeated to form the next layer of vias in the
stacks. Further details on the via formation process may be found
at pages 702-706 of Plummer, cited above, which are hereby
incorporated by reference herein.
[0025] Numerous variations may be practiced in the embodiment
depicted in FIG. 2. For example, a single signal line may be used
instead of the pair of signal lines 280, 282. The first and second
planar structures may be comb-like structures; and multiple rows of
electrically conducting vias may extend from the planar structures
and/or the comb-like structures.
[0026] The invention may also be practiced used other waveguide
configurations. For example, as shown in FIG. 5, a stripline can be
implemented in which first and second comb-like structures 540, 545
are defined in a lower metallization layer 511, third and fourth
comb-like structures 560, 565 are defined in an upper metallization
layer 515; and one or more signal lines 580, 582 are defined in a
third metallization layer 513 located between the upper and lower
metallization layers. Illustratively, horizontal sections through
both the lower metallization layer and the upper metallization
layer are the same as that depicted in FIG. 3. Optionally,
sidewalls similar to those depicted in FIG. 4 may be formed by
extending via stacks upwards from the comb-like structures in the
lower metallization layer and downwards from the comb-like
structures in the upper metallization layer. In the illustrative
embodiment of FIG. 5, the stripline is formed in five metallization
layers 511-515; but the invention may be practiced using a greater
number or a lesser number of metallization layers.
[0027] Practice of the invention has been observed to reduce
waveguide insertion loss by approximately 20% compared to a
conventional grounded co-planar waveguide such as that depicted in
FIGS. 1D, 1B and 1E. A plot of simulated transmission loss versus
frequency is set forth in FIG. 6. As shown therein, at 12.5 GHz the
transmission loss for the waveguide of FIG. 2 is 10.1 dB/mm while
the loss for the conventional waveguide is 12.6 dB/mm.
[0028] As will be apparent to those skilled in the art, numerous
variations may be practiced within the spirit and scope of the
present invention. For example, while horizontal cross-section of
FIG. 3 depicts an arrangement in which each finger of comb-like
structure 240 extends between two fingers of comb-like structure
245, comb-like structures could be used where a pair of fingers 742
of one comb-like structure 740 extend between two pairs of fingers
747 of the second comb-like structure 745, as depicted in FIG. 7 or
where a triplet of fingers 842 of one comb-like structure 840
extend between two triplets of fingers 847 of the second comb-like
structure 845 as depicted in FIG. 8. Even larger groupings of
fingers might be used; and groupings of different numbers of
fingers can be used at different places in the comb-like
structures. Similarly, pairs (or triplets, or more) of vias might
extend downward between two pairs (or triplets, or more) of
upwardly extending vias; and groupings of different numbers of vias
can be used at different places in the sidewalls. While FIGS. 2 and
5 disclose structures in which the transmission lines are formed in
the same metallization layer, structures may also be used in which
the transmission lines are located in different metallization
layers.
* * * * *