U.S. patent application number 13/078031 was filed with the patent office on 2011-07-28 for surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission system.
This patent application is currently assigned to FUJI XEROX CO., LTD.. Invention is credited to Daisuke Nagao, Teiichi Suzuki.
Application Number | 20110183450 13/078031 |
Document ID | / |
Family ID | 39969474 |
Filed Date | 2011-07-28 |
United States Patent
Application |
20110183450 |
Kind Code |
A1 |
Suzuki; Teiichi ; et
al. |
July 28, 2011 |
SURFACE EMITTING SEMICONDUCTOR LASER, METHOD FOR FABRICATING
SURFACE EMITTING SEMICONDUCTOR LASER, MODULE, LIGHT SOURCE
APPARATUS, DATA PROCESSING APPARATUS, LIGHT SENDING APPARATUS,
OPTICAL SPATIAL TRANSMISSION APPARATUS, AND OPTICAL SPATIAL
TRANSMISSION SYSTEM
Abstract
A surface emitting semiconductor laser includes a substrate, a
lower reflective mirror formed on the substrate, an active layer
formed on the lower reflective mirror, an upper reflective mirror
formed on the active layer, an optical mode controlling layer
formed between the lower reflective mirror and the upper reflective
mirror, and a current confining layer formed between the lower
reflective mirror and the upper reflective mirror. The active layer
emits light. The upper reflective mirror forms a resonator between
the lower reflective mirror and the upper reflective mirror. In the
optical mode controlling layer, an opening is formed for
selectively absorbing or reflecting off light that is emitted in
the active layer. The optical mode controlling layer optically
controls mode of laser light. The current confining layer confines
current that is applied during driving.
Inventors: |
Suzuki; Teiichi; (Kanagawa,
JP) ; Nagao; Daisuke; (Kanagawa, JP) |
Assignee: |
FUJI XEROX CO., LTD.
Tokyo
JP
|
Family ID: |
39969474 |
Appl. No.: |
13/078031 |
Filed: |
April 1, 2011 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
11946327 |
Nov 28, 2007 |
7944957 |
|
|
13078031 |
|
|
|
|
Current U.S.
Class: |
438/29 ;
257/E21.09 |
Current CPC
Class: |
H01S 5/02253 20210101;
H01S 5/18369 20130101; H01S 5/1833 20130101; H01S 5/18397 20130101;
H01S 5/18325 20130101; H01S 5/18355 20130101; H01S 5/02251
20210101; H01S 5/18341 20130101; H01S 5/18327 20130101; H01S
2301/18 20130101; H01S 5/18311 20130101 |
Class at
Publication: |
438/29 ;
257/E21.09 |
International
Class: |
H01L 21/20 20060101
H01L021/20 |
Foreign Application Data
Date |
Code |
Application Number |
May 11, 2007 |
JP |
2007-126571 |
Claims
1. A method for fabricating a surface emitting semiconductor laser,
comprising: stacking semiconductor layers that include at least a
lower reflective mirror, a current confining layer, and an active
layer, on a substrate; forming an optical mode controlling layer
that optically controls mode of laser light by forming an opening
on the uppermost layer of the stacked semiconductor layers by a
photolithography process; and forming an upper reflective mirror
that composes a resonator between the lower reflective mirror and
thereof, on the optical mode controlling layer.
2. The method for fabricating a surface emitting semiconductor
laser according to claim 1, the method further comprising: forming
a post structure that extends from at least the optical mode
controlling layer to the current confining layer, on the substrate;
and forming a conductive portion surrounded by an oxidized area by
oxidizing a portion of the current confining layer from a side
surface of the post structure.
3. The fabrication method according to claim 1, wherein the lower
reflective mirror, the active layer, the current confining layer,
and the optical mode controlling layer are formed by epitaxial
growth.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a division of U.S. application Ser. No.
11/946,327 filed Nov. 28, 2007, which is based on and claims
priority under 35 USC 119 from Japanese Patent Application No.
2007-126571 filed May 11, 2007.
BACKGROUND
[0002] 1. Technical Field
[0003] This invention relates to a surface emitting semiconductor
laser, a method for fabricating a surface emitting semiconductor
laser, a module, a light source apparatus, a data processing
apparatus, a light sending apparatus, an optical spatial
transmission apparatus, and an optical spatial transmission
system.
[0004] 2. Related Art
[0005] In technical fields such as optical communication or optical
storage, there has been a growing interest in surface emitting
semiconductor lasers, i.e., Vertical-Cavity Surface-Emitting Lasers
(hereinafter referred to as VCSELs). VCSELs have excellent
characteristics which edge-emitting semiconductor lasers do not
have. For example, VCSELs feature lower threshold current and
smaller power consumption. With VCSELs, a round light spot can be
easily obtained, and evaluation can be performed while they are on
a wafer, and light sources can be arranged in two dimensional
arrays. With these characteristics, demands for VCSELs as light
sources in the communication field have especially been expected to
grow.
[0006] In a case where a VCSEL is used as a light source or the
like for optical transmission, selection of mode of laser light is
required. For example, in a case where a VCSEL is coupled to an
optical fiber and a long-distance communication is to be performed,
single-mode is more preferable. To obtain single-mode, in general,
it is required to make the diameter of a current confining layer of
the VCSEL to about 3 to 4 micrometers.
[0007] For a VCSEL of a selective oxidation type, AlAs or AlGaAs
having a high Al-composition is used for the current confining
layer, and a portion of the current confining layer is oxidized to
form an aperture in the current confining layer. Because the
aperture is formed by an oxidizing reaction of Al, it is difficult
to accurately control the diameter, and especially, it is difficult
to reproduce a small aperture diameter for obtaining single-mode,
resulting in a reduction in yield of the VCSEL.
[0008] The present invention aims to provide a surface emitting
semiconductor laser in which mode control can be performed more
effectively than the mode control by surface processing of a light
emitting surface of a related art, and a module, a light source
apparatus, a data processing apparatus, a light sending apparatus,
an optical spatial transmission apparatus, and an optical spatial
transmission system, which use the surface emitting semiconductor
laser, and a method for fabricating a surface emitting
semiconductor laser.
SUMMARY
[0009] An aspect of the present invention provides a surface
emitting semiconductor laser including a substrate; a lower
reflective mirror formed on the substrate; an active layer formed
on the lower reflective mirror, and emitting light; an upper
reflective mirror formed on the active layer, and forming a
resonator between the lower reflective mirror and the upper
reflective mirror; an optical mode controlling layer formed between
the lower reflective mirror and the upper reflective mirror, and
optically controlling mode of laser light; and a current confining
layer formed between the lower reflective mirror and the upper
reflective mirror, and confining current that is applied during
driving. In the optical mode controlling layer, an opening is
formed for selectively absorbing or reflecting off light that is
emitted in the active layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Exemplary embodiments of the present invention will be
described in detail based on the following figures, wherein:
[0011] FIGS. 1A and 1B are cross sectional views illustrating a
configuration of a VCSEL according to a first example of the
present invention, wherein FIG. 1A illustrates a status before an
upper DBR is formed, and FIG. 1B illustrates a status after the
upper DBR is formed;
[0012] FIGS. 2A to 2D are plan views illustrating a profile of an
optical mode controlling layer;
[0013] FIGS. 3A and 3B illustrate light intensity distributions in
which transverse mode control is performed by an optical mode
controlling layer;
[0014] FIG. 4 is a graph illustrating the relation between the
diameter of the opening of the optical mode controlling layer and
the oscillation wavelength;
[0015] FIG. 5 is a schematic cross sectional view illustrating a
configuration of a VCSEL according to a second example of the
present invention;
[0016] FIG. 6 is a schematic cross sectional view illustrating a
modified example of a VCSEL according to a second example of the
present invention;
[0017] FIG. 7 is a schematic cross sectional view illustrating a
configuration of a VCSEL according to a third example of the
present invention;
[0018] FIGS. 8A to 8C are cross sectional views illustrating a
process of a method for fabricating a VCSEL according to a first
example of the present invention;
[0019] FIGS. 9A to 9C are cross sectional views illustrating a
process of a method for fabricating a VCSEL according to a first
example of the present invention;
[0020] FIGS. 10A and 10B are schematic cross sectional views each
illustrating a configuration of a module in which an optical
component is implemented in a VCSEL of according to an example;
[0021] FIG. 11 illustrates an example of a configuration of a light
source apparatus in which a VCSEL is used;
[0022] FIG. 12 is a schematic cross sectional view illustrating a
configuration of a light sending apparatus in which the module
shown in FIG. 10A is used;
[0023] FIG. 13 illustrates a configuration in which the module
shown in FIG. 10A is used for an optical transmission system;
[0024] FIG. 14A illustrates a block diagram of a configuration of
an optical transmission system;
[0025] FIG. 14B illustrates an outer configuration of an optical
transmission apparatus; and
[0026] FIG. 15 illustrates a video transmission system in which the
optical transmission apparatus of FIG. 14B is used.
DETAILED DESCRIPTION
[0027] Referring to the accompanying drawings, exemplary
embodiments for implementing the present invention will be now
described.
[0028] FIG. 1A and FIG. 1B are schematic cross sectional views
illustrating a configuration of a VCSEL according to an example of
the present invention. A VCSEL 100 according to an example includes
a p-side electrode 104 on a back surface of a p-type GaAs substrate
102. Stacked on the substrate 102 are: a lower DBR (Distributed
Bragg Reflector) 106 that composes a reflective mirror of
multilayer films in which two types of p-type Al.sub.xGa.sub.1-xAs
having different x values are overlaid one another; a current
confining layer 108 made of p-type Al.sub.0.98Ga.sub.0.02As; a
p-type lower spacer layer 110; an active layer 112 having a quantum
well structure; an n-type upper spacer layer 114; an intermediate
DBR 116 that composes a partial reflective mirror of multilayer
films in which a few periods of two types of n-type
Al.sub.xGa.sub.1-xAs having different x values are overlaid; an
optical mode controlling layer 120 made of n-type GaAs, in which an
opening 118 is formed at a center portion thereof; an n-side
electrode 122 ohmic-contacted to the optical mode controlling layer
120; an upper DBR 124 that composes a reflective mirror of
dielectric multilayer films in which SiO.sub.2 and TiO.sub.2 are
alternately stacked; and an insulating layer 126 of SiN or the like
that covers a bottom portion, a side surface, and a portion of a
top portion of a post structure P formed on the substrate 102.
[0029] The semiconductor layers on the substrate from the lower DBR
106 to the optical mode controlling layer 120 are formed by a
series of epitaxial growth. Then, by etching the semiconductor
layers from the optical mode controlling layer 120 to the lower DBR
106, a cylindrical post structure P is formed. The optical mode
controlling layer 120 being the uppermost layer of the post
structure P is a GaAs layer. By not exposing Al on the surface,
oxidation is prevented.
[0030] After the post structure P is formed, the current confining
layer 108 is oxidized from the side surface of the post structure
P. The current confining layer 108 has a higher Al-composition than
other semiconductor layers do, and thus has a higher oxidation
speed than other semiconductor layers. By this oxidation, a highly
reflective portion is formed at periphery of the current confining
layer 108, and a conductive portion 128 surrounded by the highly
reflective portion is formed. The conductive portion 128 confines
current during operation, and the diameter thereof may be about 8
to 6 micrometers. The current confining layer may be made of
AlAs.
[0031] The optical mode controlling layer 120 performs light
absorption or light reflection of oscillation wavelength near the
active layer 112 that is sandwiched between the lower DBR 106 and
the upper DBR 124. Alternatively, the optical mode controlling
layer 120 may change refractive index near the active layer 112
that is sandwiched between the lower DBR 106 and the upper DBR 124.
The optical mode controlling layer 120 controls lasing mode,
especially controls transverse mode, by optically absorbing or
reflecting off light.
[0032] In the VCSEL of this example, the oscillation at around 850
nm is contemplated, and the thickness of the optical mode
controlling layer 120 is about 200 nm. The opening 118 is formed by
etching the GaAs layer at a center portion of the optical mode
controlling layer 120. In the opening 118, absorption of light of
850 nm does not occur; however, at a portion where GaAs is
remained, light absorption occurs, and thus gain is reduced during
laser oscillation.
[0033] The opening 118 of the optical mode controlling layer 120 is
formed by a photolithography process. By this process, the opening
118 may become an accurate pattern depending on the accuracy of the
photolithography. Each of the centers of the opening 118 and the
conductive portion 128 coincides with an optical axis. Preferably,
the diameter of the opening 118 is 4 to 3 micrometers, and smaller
than the diameter of the conductive portion 128. By accurately
forming the diameter of the opening 118, the control of lasing mode
can be more accurately performed.
[0034] The optical mode controlling layer 120 is disposed in
proximity to the active layer 112 through the intermediate DBR 116.
The intermediate DBR 116 is interposed to perform gettering of gold
or the like diffused from the n-side electrode 122 that is
ohmic-contacted to the optical mode controlling layer 120. However,
the optical mode controlling layer 120 may be formed on the active
layer 112 or the upper spacer layer 114. The optical mode
controlling layer 120 is formed in a gain medium, not on the top
surface being the light emitting surface of laser light, and thus
lasing mode can be extremely effectively controlled. In other
words, a slight change in shape of the opening 118 can
significantly affect lasing mode.
[0035] FIGS. 2A to 2D are plan views of examples of a profile of an
optical mode controlling layer. The optical mode controlling layer
shown in FIGS. 2A to 2C controls mainly transverse mode, and the
optical mode controlling layer shown in FIG. 2D controls mainly
polarization.
[0036] In FIG. 2A, the optical mode controlling layer 120 is formed
in a round shape when the post structure P is formed, and the
round-shaped opening 118 being nearly concentric with outer profile
of the round shape is formed. The center of the opening 118
coincides with the center of the conductive portion 128 of the
current confining layer 108 as described above, and coincides with
the optical axis. By making the diameter of the opening 118 nearly
equal to or smaller than the diameter of the conductive portion
128, transverse mode can be controlled, and single-mode laser light
can be obtained. The light intensity distribution in which
transverse mode control by the example of FIG. 2A is performed is
shown in FIG. 3A. As shown in FIG. 3A, the light intensity
distribution of laser light becomes a single-peaked
single-mode.
[0037] The optical mode controlling layer 120 shown in FIG. 2B has
two semicircular openings 140 that are line-symmetric and divided
along a center line of the round-shaped opening. By this
configuration, gain at a portion where GaAs is remained becomes
smaller. As shown in FIG. 3B, the light intensity distribution of
laser light becomes a double-peaked single-mode having peaks that
correspond to the two semicircular openings 140.
[0038] The optical mode controlling layer 120 shown in FIG. 2C has
four fan-shaped openings 142 that are point-symmetric in which a
round-shaped opening is divided into four. By this configuration,
the light intensity distribution of laser light becomes a
single-mode having four peaks that correspond to the openings
142.
[0039] The optical mode controlling layer 120 shown in FIG. 2D is
formed by dividing a round-shaped opening in a direction of a
straight line to form three slits 144. By this configuration, the
light intensity distribution of laser light becomes a pattern
having three peaks that correspond to the three slits. In addition,
emitted laser light is aligned in a direction of the slits 144,
which is effective in controlling polarization.
[0040] Other than the control of transverse mode or polarization of
laser light as described above, the optical mode controlling layer
120 is capable of controlling vertical mode of laser light. In
other words, by changing the diameter of the opening 118 of the
optical mode controlling layer 120, oscillation wavelength can be
selected.
[0041] FIG. 4 illustrates the relation between the diameter of the
opening 118 of the optical mode controlling layer 120 and the
oscillation wavelength, when the diameter of the conductive portion
128 of the current confining layer 108 is kept constant. As obvious
from FIG. 4, when the diameter of the opening 118 (GaAs aperture
diameter shown in the horizontal axis) is increased from 6
micrometers to 10 micrometers, in approximate proportion to the
increase, the oscillation wavelength increases from about 827 nm to
839 nm. Therefore, laser light having a desired oscillation
wavelength can be obtained by selecting the diameter of the opening
118.
[0042] A second example of the present invention will be now
described. In the first example, the opening 118 is formed by
etching the GaAs layer that is the optical mode controlling layer.
However, etching selectivity between the GaAs layer and an AlGaAs
layer underlying thereof is small, and thus the underlying AlGaAs
layer is over etched. This alters the thickness of the intermediate
DBR 116, which is undesirable. Therefore, in the second example, a
configuration that can avoid such damage in thickness due to
etching is adopted.
[0043] FIG. 5 illustrates a schematic cross sectional view of a
VCSEL according to a second example, wherein same reference
numerals are used for a same configuration as that of the first
example. In a VCSEL 100A of the second example, as a cap layer of
the post structure P, that is, the final layer by epitaxial growth,
an n-type GaAs layer 160 having a thickness of 20 nm is formed. On
the periphery of the GaAs layer 160, the n-side electrode 122 is
ohmic-contacted, and a ring shaped optical mode controlling layer
162 is formed spaced apart from the n-side electrode 122. In a
center portion of the optical mode controlling layer 162, a
round-shaped opening 164 is formed. The center of the opening 164
coincides with the optical axis, and the diameter of the opening
164 is equal to or slightly smaller than the diameter of the
conductive portion 128. The optical mode controlling layer 162 may
be made of a metal, such as gold, titanium, tungsten, or the like,
and is formed with high accuracy by lift-off. In a lift-off
process, a resist is etched when a resist pattern is formed. The
selectivity between the resist and the GaAs layer 160 is
sufficient, and the damage in thickness of the intermediate DBR 116
can be prevented.
[0044] The GaAs layer 160 being the cap layer has an extremely thin
thickness, and thus it passes light emitted in the active layer
112. The light that is passed through the GaAs layer 160 is
reflected off in a portion where the metal of the optical mode
controlling layer 162 exists on interface thereof, and is passed
through the opening 164 in which no metal exists. By this
configuration, similarly to the case of the first example, control
of transverse mode, control of polarization, and control of
vertical mode of laser light being oscillated can be performed.
[0045] In the example shown in FIG. 5, the optical mode controlling
layer 162 is formed spaced apart from the n-side electrode 122;
however, for example, in a case where gold (Au) that can be
ohmic-contacted to the GaAs layer 160 is used for the n-side
electrode 122, the n-side electrode 122 and the optical mode
controlling layer 162 can be formed simultaneously by lift-off,
such that they are connected each other as shown in FIG. 6.
[0046] In addition, in the second example, the optical mode
controlling layer that reflects off light having an oscillation
wavelength; however, an optical mode controlling layer that absorbs
light having an oscillation wavelength may be formed. For example,
if the oscillation wavelength is around 1 micrometer, the optical
mode controlling layer shown in FIG. 5 may be formed of amorphous
silicon. The amorphous silicon absorbs a wavelength of 1
micrometer. Therefore, similarly to a case where light is reflected
off, control of transverse mode of oscillation wavelength, control
of polarization, and control of vertical mode can be performed.
[0047] A third example of the present invention will be now
described. In the first example, the n-side electrode 122 is formed
between the optical mode controlling layer 120 and the upper DBR;
however, in a VCSEL 100B according to a third example, as shown in
FIG. 7, after forming the optical mode controlling layer 120, an
n-type upper DBR 170 is formed thereon, and an n-side electrode 172
is formed thereon. The upper DBR 170 may be formed of semiconductor
multilayer films such as ITO, and the n-side electrode 172 is
electrically coupled to the optical mode controlling layer 120
through the upper DBR 170. Other configuration is same as that of
the first example.
[0048] Referring now to FIGS. 8A to 8C and FIGS. 9A to 9C, a method
for fabricating a VCSEL according to a first example will be
described. As shown in FIG. 8A, by Metal Organic Chemical Vapor
Deposition (MOCVD), sequentially stacked on the p-type GaAs
substrate 102 are: the p-type lower DBR 106 having a carrier
concentration of 1.times.10.sup.18 cm.sup.-3 in which 40.5 periods
of, for example, Al.sub.0.9Ga.sub.0.1As and
Al.sub.0.12Ga.sub.0.88As, each having a film thickness of 1/4 of
the wavelength in the medium, are alternately stacked; the current
confining layer 108 made of p-type Al.sub.0.98Ga.sub.0.02As; the
lower spacer layer 110 made of p-type Al.sub.0.6Ga.sub.0.4As; the
undoped quantum well active layer (made of three GaAs quantum well
layers each having a thickness of 70 nm and four
Al.sub.0.3Ga.sub.0.7As barrier layers each having a thickness of 50
nm) 112; the upper spacer layer 114 made of n-type
Al.sub.0.6Ga.sub.0.4As; the n-type intermediate DBR 116 in which
plural periods of Al.sub.0.9Ga.sub.0.1As and
Al.sub.0.15Ga.sub.0.85As, each having a film thickness of 1/4 of
the wavelength in the medium, are alternately stacked; the n-type
GaAs layer (optical mode controlling layer) 120 having a carrier
concentration of 1.times.10.sup.19 cm.sup.-3 and thickness of 200
nm.
[0049] After stopping the epitaxial growth, the substrate is taken
out from the chamber, and then as shown in FIG. 8B, a round-shaped
photoresist pattern M is formed on the optical mode controlling
layer 120. Then, as shown in FIG. 8C, by using the photoresist
pattern, the semiconductor layers are dry etched to form a
cylindrical post structure P on the substrate 102. The post
structure P exposes at least the current confining layer 108.
[0050] Then, as shown in FIG. 9A, oxidation of the substrate is
performed in an oxidation furnace for a predetermined time. By this
oxidation, a specified distance from the side surface of the post P
is oxidized, and an oxidized area 108a is formed in the current
confining layer 108. The area surrounded by the oxidized area 108a
becomes the conductive portion 128 that performs current confining
during operation.
[0051] Then, the photoresist pattern M is removed, and the
insulating layer 126 of SiN or the like is formed on the entire
surface of the substrate. After that, as shown in FIG. 9B, the
insulating layer 126 is etched by a photolithography process to
form a round-shaped opening 126a at a top portion of the post
structure P, and the GaAs layer 120 is exposed.
[0052] Then, a top portion of the GaAs layer 120 appearing at a top
portion of the post structure P is etched by a photolithography
process, and as shown in FIG. 9C, a round-shaped opening 118 is
formed to obtain the optical mode controlling layer 120.
[0053] Then, on the optical mode controlling layer 120, the n-side
electrode 122 is formed by lift-off. For a material for the
electrode, Au or Cu may be used. Then, on the optical mode
controlling layer 120, the upper DBR 124 of dielectric multilayer
films made of SiO.sub.2 and TiO.sub.2, which are dielectric and
alternately stacked, is formed. The dielectric multilayer films are
formed by vapor deposition or electron beam deposition. In the
deposition, SiO.sub.2 and TiO.sub.2 are alternately deposited such
that each of them has a predetermined thickness, by performing
thickness management using an optical monitor. Finally, on a back
surface of the substrate 102, the p-side electrode 104 is formed.
As such, a VCSEL that emits laser light having an oscillation
wavelength of about 850 nm can be obtained.
[0054] For a material of the layer that performs mode control,
other than GaAs, a material that is lattice matched, such as
InGaAs, can be used instead. For a VCSEL according to the second
example, the thickness of the GaAs layer being the final layer is
made to 20 nm, and after that, an optical mode controlling layer
that absorbs or reflects off light having an oscillation wavelength
is formed on the GaAs layer by a photolithography process.
[0055] In the examples described above, a single post structure P
is formed on the substrate; however, the VCSEL may be of a
multi-beam or multi-spot type in which plural post structures P are
formed on the substrate, and laser light is emitted from the plural
post structures P. In addition, in the examples described above, a
VCSEL in which an AlGaAs system is used; however, the present
invention can also be applicable to a VCSEL in which other III-V
group compound semiconductor is used. In addition, the shape of the
post structure may be rectangular, other than cylindrical
shape.
[0056] Referring to drawings, a module, a light sending apparatus,
a spatial transmission system, an optical transmission apparatus or
the like, which use a VCSEL of an example, will be described. FIG.
10A is a cross sectional view illustrating a configuration of a
package (module) in which a VCSEL is mounted. In a package 300, a
chip 310 in which a VCSEL is formed is fixed on a disk-shaped metal
stem 330 through a conductive adhesive 320. Conductive leads 340,
342 are inserted into through holes (not shown) in the stem 330.
One lead 340 is electrically coupled to an n-side electrode of the
VCSEL, and the other lead 342 is electrically coupled to a p-side
electrode.
[0057] On the stem 330, a rectangular hollow cap 350 is fixed to
contain the chip 310, and a ball lens 360 is fixed in a center
opening of the cap 350. The optical axis of the ball lens 360 is
positioned to match an approximate center of the chip 310. When a
forward voltage is applied between the leads 340 and 342, laser
light is emitted vertically from the chip 310. The distance between
the chip 310 and the ball lens 360 may be adjusted so that the ball
lens 360 is contained within the divergence angle .theta. of the
laser light from the chip 310. In addition, in the cap, a light
sensing element or a thermal sensor may be contained to monitor the
emitting status of the VCSEL.
[0058] FIG. 10B illustrates a configuration of another package. In
a package 302 shown in FIG. 10B, instead of using the ball lens
360, a flat-plate glass 362 is fixed in a center portion of the cap
350. The center of the flat-plate glass 362 is positioned to match
an approximate center of the chip 310. The distance between the
chip 310 and the flat-plate glass 362 may be adjusted so that the
opening diameter of the flat-plate glass 362 is equal to or greater
than the divergence angle .theta. of the laser light from the chip
310.
[0059] FIG. 11 illustrates an example in which a VCSEL is used as a
light source. A light source apparatus 370 includes the package 300
in which a VCSEL is implemented as in FIG. 10A or FIG. 10B, a
collimator lens 372 that receives multi-beam laser light emitted
from the package 300, a polygon mirror 374 that rotates at a
certain speed and reflects off light rays from the collimator lens
372 with a certain divergence angle, an f.theta. lens 376 that
receives laser light from the polygon mirror 374 and projects the
light on a reflective mirror 378, a line-shaped reflective mirror
378, and a light sensitive drum 380 that forms a latent image based
on the reflected light from the reflective mirror 378. As such, a
VCSEL can be used as a light source for an optical data processing
apparatus, such as a copy machine or printer, equipped with an
optical system that collects laser light from the VCSEL onto a
light sensitive drum, and a mechanism that scans the collected
laser light on the light sensitive drum.
[0060] FIG. 12 is a cross sectional view illustrating a
configuration in which the module shown in FIG. 10A is applied to a
light sending device. A light sending device 400 includes a
cylindrical housing 410 fixed to the stem 330, a sleeve 420 formed
integrally with the housing 410 on an edge surface thereof, a
ferrule 430 held in an opening 422 of the sleeve 420, and an
optical fiber 440 held by the ferrule 430. In a flange 332 formed
in a direction of the circumference of the stem 330, an edge
portion of the housing 410 is fixed. The ferrule 430 is positioned
exactly in the opening 422 of the sleeve 420. The optical axis of
the optical fiber 440 is aligned with the optical axis of the ball
lens 360. In a through hole 432 of the ferrule 430, the core of the
optical fiber 440 is held.
[0061] Laser light emitted from the surface of the chip 310 is
concentrated by the ball lens 360. The concentrated light is
injected into the core of the optical fiber 440, and transmitted.
While the ball lens 360 is used in the above example, other lens
such as a biconvex lens or a plano-convex lens may be used. In
addition, the light sending device 400 may include a driving
circuit for applying an electrical signal to the leads 340, 342.
Furthermore, the light sending device 400 may have a receiving
function for receiving an optical signal via the optical fiber
440.
[0062] FIG. 13 illustrates a configuration in which the module
shown in FIG. 12 is used in a spatial transmission system. A
spatial transmission system 500 includes a package 300, a
condensing lens 510, a diffusing plate 520, and a reflective mirror
530. The light concentrated by the condensing lens 510 is reflected
off the diffusing plate 520 through an opening 532 of the
reflective mirror 530. The reflected light is reflected toward the
reflective mirror 530. The reflective mirror 530 reflects off the
reflected light toward a predetermined direction to perform optical
transmission.
[0063] FIG. 14A illustrates an exemplary configuration of an
optical transmission system in which a VCSEL is used as a light
source. An optical transmission system 600 includes a light source
610 that contains the chip 310 in which a VCSEL is formed, an
optical system 620, for example, for concentrating laser light
emitted from the light source 610, a light receiver 630 for
receiving laser light outputted from the optical system 620, and a
controller 640 for controlling the driving of the light source 610.
The controller 640 provides a driving pulse signal for driving the
VCSEL to the light source 610. The light emitted from the light
source 610 is transmitted through the optical system 620 to the
light receiver 630 by an optical fiber or a reflective mirror for
spatial transmission. The light receiver 630 may detect the
received light by a photo-detector, for example. The light receiver
630 is capable of controlling operations (for example, the start
timing of optical transmission) of the controller 640, by a control
signal 650.
[0064] FIG. 14B illustrates a general configuration of an optical
transmission apparatus used for an optical transmission system. An
optical transmission apparatus 700 includes a case 710, an optical
signal transmitting/receiving connector 720, a light emitting/light
receiving element 730, an electrical signal cable connector 740, a
power input 750, an LED 760 for indicating normal operation, an LED
770 for indicating an abnormality, and a DVI connector 780. Inside
the apparatus, a transmitting circuit board/receiving circuit board
is contained.
[0065] A video transmission system is shown in FIG. 15 in which the
optical transmission apparatus 700 is used. A video transmission
system 800 uses the optical transmission apparatus shown in FIG.
14B for transmitting a video signal generated at a video signal
generator 810 to an image display 820 such as a liquid crystal
display. More specifically, the video transmission system 800
includes the video signal generator 810, the image display 820, an
electrical cable 830 for DVI, a transmitting module 840, a
receiving module 850, a connector 860 for a video signal
transmission optical signal, an optical fiber 870, an electrical
cable connector 880 for a control signal, a power adapter 890, and
an electrical cable 900 for DVI.
[0066] A surface emitting semiconductor laser according to the
present invention can be used in fields such as an optical data
processing, or optical high speed data communication.
[0067] The foregoing description of the examples has been provided
for the purposes of illustration and description, and it is not
intended to limit the scope of the invention. It should be
understood that the invention may be implemented by other methods
within the scope of the invention that satisfies requirements of a
configuration of the present invention.
* * * * *