U.S. patent application number 12/627282 was filed with the patent office on 2011-06-02 for method of and structure for recovering gain in a bipolar transistor.
This patent application is currently assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION. Invention is credited to Kai Di Feng, Ping-Chuan Wang, Zhijian Yang.
Application Number | 20110128069 12/627282 |
Document ID | / |
Family ID | 43735951 |
Filed Date | 2011-06-02 |
United States Patent
Application |
20110128069 |
Kind Code |
A1 |
Yang; Zhijian ; et
al. |
June 2, 2011 |
METHOD OF AND STRUCTURE FOR RECOVERING GAIN IN A BIPOLAR
TRANSISTOR
Abstract
A method of recovering gain in a bipolar transistor includes:
providing a bipolar transistor including an emitter, a collector,
and a base disposed between junctions at the emitter and the
collector; reverse biasing the junction disposed between the
emitter and the base with an operational voltage and for an
operational time period, so that a current gain .beta. of the
transistor is degraded; idling the transistor, and generating a
repair current I.sub.br into the base, while forward biasing the
junction disposed between the emitter and the base with a first
repair voltage (V.sub.EBR), and while at least partly
simultaneously reverse biasing the junction disposed between the
collector and the base with a second repair voltage (V.sub.CBR),
for a repair time period (T.sub.R), so that the gain is at least
party recovered; wherein V.sub.EBR, V.sub.CBR and T.sub.R have the
proportional relationship: T.sub.R .varies.
(.DELTA..beta.).sup.2.times.exp
[1/(Tam+Rth.times.1e.times.V.sub.CER],
V.sub.CER=V.sub.BER+V.sub.CBR, and 1e=.beta..times.I.sub.br, .beta.
is the normal current gain of the transistor, .DELTA..beta. is the
target recovery gain of the transistor in percentage, Tam is the
ambient temperature in degrees K, I.sub.br is the repair current to
the base in .mu. amps, Rth is the self-heating thermal resistance
of the transistor in K/W, T.sub.R is in seconds. The invention
further includes structures for implementing the method.
Inventors: |
Yang; Zhijian; (Hopewell
Junction, NY) ; Wang; Ping-Chuan; (Hopewell Junction,
NY) ; Feng; Kai Di; (Hopewell Junction, NY) |
Assignee: |
INTERNATIONAL BUSINESS MACHINES
CORPORATION
Armonk
NY
|
Family ID: |
43735951 |
Appl. No.: |
12/627282 |
Filed: |
November 30, 2009 |
Current U.S.
Class: |
327/534 |
Current CPC
Class: |
H03F 1/302 20130101 |
Class at
Publication: |
327/534 |
International
Class: |
H03K 3/01 20060101
H03K003/01 |
Claims
1. Method of recovering gain in a bipolar transistor, comprising:
providing a bipolar transistor including an emitter, a collector,
and a base disposed between junctions at the emitter and the
collector; reverse biasing the junction disposed between the
emitter and the base with an operational voltage and for an
operational time period, so that a current gain .beta. of the
transistor is degraded; idling the transistor, and generating a
repair current I.sub.br into the base, while forward biasing the
junction disposed between the emitter and the base with a first
repair voltage (V.sub.EBR), and while at least partly
simultaneously reverse biasing the junction disposed between the
collector and the base with a second repair voltage (V.sub.CBR),
for a repair time period (T.sub.R), so that the gain is at least
party recovered; wherein V.sub.EBR, V.sub.CBR and T.sub.R have the
proportional relationship: T.sub.R .varies.
(.DELTA..beta.).sup.2.times.exp[1/(Tam+Rth.times.1e.times.V.sub.CER],
V.sub.CER=V.sub.BER+V.sub.CBR, and 1e=.beta..times.I.sub.br, .beta.
is the normal current gain of the transistor, .DELTA..beta. is the
target recovery gain of the transistor in percentage, Tam is the
ambient temperature in degrees K, I.sub.br is the repair current to
the base in .mu. amps, Rth is the self-heating thermal resistance
of the transistor in K/W, T.sub.R is in seconds.
2. The method as claimed in claim 1, wherein V.sub.EBR is in a
range of approximately 0.8 volts to approximately 1.2 volts.
3. The method as claimed in claim 1, wherein V.sub.CBR is in a
range of approximately 0.5 volts to approximately 2.0 volts.
4. The method as claimed in claim 1, wherein T.sub.R is in a range
of approximately one second to approximately 100 seconds.
5. The method as claimed in claim 1, wherein the transistor is an
npn transistor.
6. The method as claimed in claim 1, wherein the transistor is a
pnp transistor.
7. The method as claimed in claim 1, wherein Ibr is within a range
of approximately 10 .mu.A to approximately 150 .mu.A.
8. The method as claimed in claim 1, wherein I.sub.br is within a
range of approximately 100 .mu.A to approximately 300 .mu.A.
9. The method as claimed in claim 1, wherein Rth is 6000
K/Watt.
10. A method of recovering gain in a bipolar transistor,
comprising: providing a bipolar transistor including an emitter, a
collector, and a base disposed between junctions at the emitter and
the collector; reverse biasing the junction disposed between the
emitter and the base with an operational voltage and for an
operational time period, so that a current gain (I.sub.c/I.sub.b)
of the transistor is degraded; idling the transistor when the
degradation reaches a threshold; and generating a repair current
I.sub.br into the base while forward biasing the junction disposed
between the emitter and the base with a first repair voltage
(V.sub.EBR), and while at least partly simultaneously; reverse
biasing the junction disposed between the collector and the base
with a second repair voltage (V.sub.CBR), for a repair time period
(T.sub.R), so that the gain is at least partly recovered; wherein
V.sub.EBR, V.sub.CBR and T.sub.R have the proportional
relationship: T.sub.R .varies.
(.DELTA..beta.).sup.2.times.exp[1/(Tam+Rth.times.1e.times.V.sub.CER],
V.sub.CER=V.sub.BER+V.sub.CBR, and 1e=.beta..times.I.sub.br, .beta.
is the normal current gain of the transistor, .DELTA..beta. is the
target recovery gain of the transistor in percentage, Tam is the
ambient temperature in degrees K, I.sub.br is the repair current to
the base in .mu. amps, Rth is the self-heating thermal resistance
of the transistor in K/w, T.sub.R is in seconds.
11. The method as claimed in claim 10, wherein V.sub.EBR is in a
range of approximately 0.8 volts to approximately 1.2 volts.
12. The method as claimed in claim 10, wherein V.sub.CBR is in a
range of approximately 0.5 volts to approximately 1.0 volts.
13. The method as claimed in claim 10, wherein T.sub.R is in a
range of approximately one second to approximately 100 seconds,
14. The method as claimed in claim 10, wherein the transistor is an
npn transistor.
15. The method as claimed in claim 10, herein the transistor is a
pnp transistor.
16. The method as claimed in claim 10, wherein the idling step
includes monitoring values of I.sub.br.
17. The method as claimed in claim 10, wherein Ibr is within a
range of approximately 100 .mu.A to approximately 300 .mu.A.
18. A bipolar transistor recovery arrangement, comprising: a
bipolar transistor including an emitter, a collector, and a base
disposed between junctions at the emitter and the collector, the
transistor having a current gain (.beta.) that is degraded; a
collector load circuit connected to the collector, an emitter
circuit connected to the emitter, and a base bias circuit connected
to the base and in parallel with the collector load circuit; and a
gain recovery circuit connected to the base and in parallel with
the base bias circuit, the gain recovery circuit including a
current source connected in parallel with a current mirror for
generating a repair current (I.sub.br) to the base during a repair
time period (T.sub.R); wherein the V.sub.BER, V.sub.CBR and T.sub.R
have the proportional relationship: T.sub.R .varies.
(.DELTA..beta.).sup.2.times.exp[1/(Tam+Rth.times.1e.times.V.sub.CER],
V.sub.CER=V.sub.BER+V.sub.CBR, and 1e=.beta..times.I.sub.br, .beta.
is the normal current gain of the transistor, .DELTA..beta. is the
target recovery gain of the transistor in percentage, Tam is the
ambient temperature in K, I.sub.br is the repair current to the
base in .mu. amps, Rth is the self-heating thermal resistance of
the transistor in K/W, T.sub.R is in seconds.
19. The arrangement as claimed in claim 18, wherein V.sub.BER is in
a range of approximately 0.8 volts to approximately 1.2 volts.
20. The arrangement as claimed in claim 18, wherein V.sub.CBR is in
a range of approximately 0.5 volts to approximately 2.0 volts.
21. The arrangement as claimed in claim 18, wherein T.sub.R is in a
range of approximately one second to approximately 100 seconds.
22. The arrangement as claimed in claim 18, wherein Rth is
6000.
23. The arrangement as claimed in claim 18, wherein T.sub.R
.varies. (.DELTA..beta.).sup.2.times.exp
[1/(Tam+Rth.times.1e.times.V.sub.CER], and wherein .beta.=4600.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to bipolar transistors and,
more particularly, to methods and structures for recovering gain
lost or degraded because of, for example, a hot carrier effect.
BACKGROUND OF THE INVENTION
[0002] Bipolar transistors are electronic devices with two p-n
junctions that are in close proximity to each other. A typical
bipolar transistor has three device regions: an emitter, a
collector, and a base disposed between the emitter and the
collector. Ideally, two p-n junctions, i.e. the emitter-base and
collector-base junctions, are separated by a specific distance.
Modulation of the current flow in one p-n junction by changing the
bias of the nearby junction is called "bipolar transistor
action."
[0003] If the emitter and collector are doped n-type and the base
is doped p-type, the device is an "npn" transistor. Alternatively,
if the opposite doping configuration is used, the device is a "pnp"
transistor. Because of the mobility of minority carriers, i.e.
electrons, in the base region of npn transistors, higher frequency
operation and higher speed performances can be obtained with npn
transistors. Therefore, the present inventors believe npn
transistors comprise many of the bipolar transistors used to build
integrated circuits. In FIG. 1(a) and FIG. 1(b), prior art npn and
pnp bipolar transistors Q0, Q1, in addition to respective base bias
circuits, switches P0, N0, collector load circuits and emitter load
circuits are shown.
[0004] Performance wear-out over a device (bipolar transistor)
operating lifetime has been a major problem for all semiconductor
devices. One of the wear-out mechanisms is the known hot carrier
effect due to reverse bias of the base-emitter junction in bipolar
devices. In some circuit applications, the base-emitter junction is
required to be reverse biased at a high voltage (such as
V.sub.BE=1.5 volts or higher) for a long time, which would severely
degrade key device performance parameters, in particular a current
gain (hfe "aka" .beta.). The current gain .beta. is a ratio of the
collector current I.sub.c divided by the base current I.sub.b. The
reverse bias of the base-emitter junction at a high voltage for a
long time significantly reduces the bipolar transistor operating
lifetime.
[0005] For discussions of the hot carrier effect and reverse bias
of the base-emitter junction in bipolar transistors, see, for
example: HOT-ELECTRON-INDUCED DEGRADATION AND POST-STRESS RECOVERY
OF BIPOLAR TRANSISTOR GAIN AND NOISE CHARACTERISTICS, by Sun et
al., IEEE Transections on Electron Devices, Vol. 39, No. 9,
September 1992, pgs. 2178-2180; TEMPERATURE DEPENDENCE AND
POST-STRESS RECOVERY OF HOT ELECTRON DEGRADATION EFFECTS IN BIPOLAR
TRANSISTORS, by Huang et al., IEEE 1991 Bipolar Circuits and
Technology, 5/91, pgs. 170-173.
[0006] Traditionally, bipolar device manufacturers and designers
are limited by a maximum allowed base-emitter reverse voltage
(V.sub.BE) in order to ensure reliability in the transistor
operation lifetime. However, as the reverse voltage limit continues
to be reduced in advanced semiconductor technology with more
demanding performance requirements and ever shrinking device
dimensions, it is becoming very problematic for circuit designers
to use standard circuit libraries developed from previous
technologies (e.g., larger technology nodes).
[0007] For example, a customer may desire a semiconductor foundry
to support a transistor circuit (device) with a reverse bias
voltage (V.sub.BE) at 3.0V using, for example, BiCMOS6WL technology
of IBM that offers a reverse voltage bias limit of approximately
(.+-.10%) 1.75V. With traditional reliability guidelines and
models, such a design significantly impacts reliability during the
transistor lifetime and, thus, is problematic. Meeting reliability
requirements for such transistor designs is very challenging. It
is, therefore, very important for, for example, a semiconductor
foundry or other semiconductor manufacturer to have a solution in
order to alleviate this base-emitter junction reverse bias voltage
limit.
[0008] U.S. Pat. No. 7,238,565 B2 entitled "METHODOLOGY FOR
RECOVERY OF HOT CARRIER INDUCED DEGRADATION IN BIPOLAR DEVICES," by
Guarin et al., issued Jul. 3, 2007, discloses the recovery of
degradation caused by the hot carrier effect in the base-collector
junction using thermal annealing. A method of forward biasing a
bipolar transistor for degradation recovery is also disclosed in
this patent. In one of several embodiments disclosed in the '565B2
Patent, a high forward current around the peak fT current is
provided to the bipolar transistor while operating below an
avalanche condition (V.sub.CB of less than 1 volt). The high
forward current contributes to increase the temperature of the
bipolar transistor to about 200.degree. C. or greater. More
particularly, appropriately increasing the temperatures of the
base-collector junction and the base-emitter junction contributes
to recovering the degradation significantly. U.S. Pat. No.
7,238,565 B2 is hereby incorporated in its entirety herein by
reference.
[0009] The present inventors believe that improvements to the
invention disclosed in U.S. Pat. No. 7,238,565 B2, assigned to
International Business Machines Corporation (the assignee of the
present invention and patent application) are achievable,
particularly with respect to implementations (methods and
arrangements) for gain recovery in a bipolar transistor.
SUMMARY OF THE INVENTION
[0010] According to the present invention, a method of recovering
gain in a bipolar transistor comprises: providing a bipolar
transistor including an emitter, a collector, and a base disposed
between junctions at the emitter and the collector; reverse biasing
the junction disposed between the emitter and the base with an
operational voltage and for an operational time period, so that a
current gain (.beta.) of the transistor is degraded; idling the
transistor, generating a repair current I.sub.br into the base,
while forward biasing the junction disposed between the emitter and
the base with a first repair voltage (V.sub.BER), and while at
least partly simultaneously reverse biasing the junction disposed
between the collector and the base with a second repair voltage
(V.sub.CBR), for a repair time period (T.sub.R), so that the gain
is at least party recovered; wherein V.sub.BER, V.sub.CBR and
T.sub.R have the proportional relationship:
T.sub.R.varies.(.DELTA..beta.).sup.2.times.exp[1/(Tam+Rth.times.1e.times-
.V.sub.CER], V.sub.CER=V.sub.BER+V.sub.CBR, and
1e=.beta..times.I.sub.br,
[0011] .beta. is the normal current gain of the transistor,
.DELTA..beta. is the target recovery gain of the transistor in
percentage, Tam is the ambient temperature in degrees K, I.sub.br
is the repair current to the base in .mu. amps, Rth is the
self-heating thermal resistance of the transistor in K/W, T.sub.R
is the repair time period in seconds.
[0012] A bipolar transistor recovery arrangement comprises: a
bipolar transistor including an emitter, a collector, and a base
disposed between junctions at the emitter and the collector, the
transistor having a current gain (.beta.) that is degraded; a
collector load circuit connected to the collector, an emitter
circuit connected to the emitter, and a base bias circuit connected
to the base and in parallel with the collector load circuit; and a
gain recovery circuit connected to the base and in parallel with
the base bias circuit, the gain recovery circuit including a
current source connected in parallel with a current mirror for
generating a repair current (Ib.sub.r) to the base during a repair
time period (T.sub.R); wherein the V.sub.BER, V.sub.CBR and T.sub.R
have the proportional relationship:
T.sub.R.varies.(.DELTA..beta.).sup.2.times.exp[1/(Tam+Rth.times.1e.times-
.V.sub.CER], V.sub.CER=V.sub.BER+V.sub.CBR, and
1e=.beta..times.I.sub.br,
[0013] .beta. is the normal current gain of the transistor,
.DELTA..beta. is the target recovery gain of the transistor in
percentage, Tam is the ambient temperature in K, I.sub.br is the
repair current to the base in p amps, Rth is the self-heating
thermal resistance of the transistor in K/W, T.sub.R is in
seconds.
[0014] A further embodiment of the method according to the
invention includes monitoring the degradation, and then idling the
transistor when the degradation reaches a preset threshold. In
general, according to embodiments of the invention, higher values
of I.sub.br and accordingly V.sub.BER result in shorter recovery
times (repair times) T.sub.R
BRIEF DESCRIPTION OF THE DRAWING
[0015] Further and still other embodiments of the invention will
become more readily apparent when the detailed description is taken
in conjunction with the following drawing, in which:
[0016] FIG. 1(a) is a schematic circuit diagram of an npn
transistor, a base bias circuit, a collector load circuit, an
emitter circuit, a switch P0, sources of potential PD, V.sub.CC,
IN, gnd, all according to the prior art; FIG. 1(b) shows equivalent
components suitable for an arrangement including a pnp transistor,
also according to the prior art.
[0017] FIG. 2 is a chart showing experimental results for gain
degradation (influenced by hot carrier stress: V.sub.BE reversed
biased at 2.75 volts) and gain recovery according to a preferred
embodiment of the invention utilizing a high forward active bias
(V.sub.BE--repair=1.1 volt) across the base-emitter junction and a
low reverse bias (V.sub.CB--repair=2 volts) across the
collector-base junction of a pnp bipolar transistor according to
IBM BiCMOS 6WL technology.
[0018] FIG. 3(a) is a schematic circuit diagram according to a
first preferred circuit embodiment of the present invention,
including a gain recovery circuit 100N with input signal
GRC.sub.--b for the npn transistor Q0; FIG. 3(b) shows equivalent
components including a gain recovery circuit 100P (with input
signal GRC) for a configuration (arrangement) including a pnp
transistor Q1.
[0019] FIG. 3(c) is a more detailed schematic circuit diagram of a
preferred embodiment for the embodiment shown in FIG. 3(a),
including a repair current source 13 connected to a current mirror
T2, T3.
[0020] FIG. 4(a) is a schematic circuit diagram (larger scale) of
the gain recovery circuit 100N in FIG. 3(c): 10N, P0 and P1
correspond to I3, T2 and T3 respectively; FIG. 4(b) is a more
detailed schematic circuit diagram (larger scale) of a preferred
embodiment of the gain recovery circuit 100P.
[0021] FIG. 5 is a block schematic circuit diagram of a second
preferred circuit embodiment of the present invention, including a
current monitor 200N connected in series with the collector load
circuit and in parallel with the gain recovery circuit 100N and the
base bias circuit for the npn transistor Q0, and also connected to
a gain recovery controller 300N as shown.
[0022] FIG. 6 is a more detailed self-explanatory schematic circuit
current diagram of a preferred embodiment of the current monitor
200N that detects and outputs the current I.sub.c.
[0023] FIG. 7 is a more detailed self-explanatory block schematic
circuit diagram of a preferred embodiment of the gain recovery
controller 300N, and including preferred timing signals
(I.sub.c--det, I.sub.c--check, over flow).
[0024] FIG. 8 is a flow diagram of a first preferred embodiment of
a method of gain recovery according to the present invention.
[0025] FIG. 9 is a flow diagram of a second preferred embodiment of
a method of gain recovery according to the present invention.
[0026] FIG. 10 is a more detailed flow diagram of the method shown
in FIG. 8.
[0027] FIG. 11 is a more detailed flow diagram of the method shown
in of FIG. 9.
DETAILED DESCRIPTION OF THE INVENTION INCLUDING BEST MODES
[0028] Preferred embodiments of the present invention will now be
described in more detail with reference to the accompanying drawing
figures.
[0029] The performance degradation caused by a high voltage reverse
bias across the base-emitter junction can be significantly
recovered by switching the degraded device into a repair mode in
which a high forward current causes a high forward bias V.sub.BER
and a low reverse bias V.sub.CBR for a suitable (e.g. short) period
of time. "High" as used in this context for V.sub.BE means high for
V.sub.BE in 6WL (low bias for V.sub.BE in 6WL Technology is approx.
0.81 volts). "Low" as used in this context for V.sub.CB means low
for V.sub.CB in 6WL Technology (high bias for V.sub.CB in 6WL is
approx. 4 volts.
[0030] As shown in the experimental data chart of FIG. 2, the
current gain of the device (pnp) is reduced by as much as 18% in
less than 5 hours at an elevated reverse bias voltage (2.75V)
across the base-emitter junction. When the device is switched to
the repair mode (i.e., active mode with forward BE junction biased
at 1.1V), the current gain (13) is significantly recovered (about
67% recovery) within merely a few seconds. The collector-base
junction was reversed biased with V.sub.CBR at 2 volts. In the
inventors' opinions, this data clearly demonstrates benefits of
this invention for semiconductor bipolar device repair.
[0031] A first preferred embodiment of a method according to the
present invention is shown in FIG. 8, and in more detail in FIG.
10. In FIG. 8, the following steps are performed: Power On, Recover
Bipolar for a Preset Time, and then Return to Normal Circuit
Operation. In FIG. 10, the steps A-D are performed in sequence and
according to the proportional relationship referenced in block E.
Step C may correspond to the Power On step of FIG. 8. In actual
implementations of all embodiments of the present invention, more
precise or rigorous relationships can be utilized. See, for
example, the description under MORE RIGOROUS RELATIONSHIPS.
[0032] According to the preferred embodiments of the methods and
apparatus (e.g. circuits) according to the invention disclosed
herein, various features of the invention are shown in the figures
listed within respective parentheticals as set forth below. The
particular values shown are for the BiCMOS6WL or BiCMOS8HP
Technology of IBM.
[0033] Device repair bias conditions and timing (FIGS. 3-11):
[0034] Forward bias emitter-base junction by supplying the repair
current I.sub.br to the base, so that emitter current is close to
peak fT current density and Veb_repair=0.8V.about.1.2V, and the
collector-base junction is reverse biased at
Vcb_repair=0.5V.about.2V.
[0035] Repair times (T.sub.r) ranging from one second to 100
seconds (depending on the repairing base current I.sub.br which
affects both repair emitter current I.sub.er and the voltages
V.sub.eb--repair (V.sub.BER) and V.sub.cb--repair (V.sub.CBR), as
is well understood by those skilled in the art in view of the
present specification and figures.
[0036] I.sub.br is within a range of several hundred .mu.A to
ensure the emitter current I.sub.e is close to peak fT current.
Preferably, 6WL:I.sub.b, is in a range of approx. 10 .mu.A to
approx. 300 .mu.A; 8HP: I.sub.br is in a range of approximately 100
.mu.A to approximately 300 .mu.A. [0037] (1) Device Repair Circuit
(FIGS. 3, 4, 8, 10):
[0038] Add repair circuit blocks 100N, 100P into the normal
function blocks in the bipolar device circuit arrangements,
comprising emitter-bias blocks, base-bias blocks and collector-bias
blocks.
[0039] During normal operations of the devices Q0, Q1, the repair
blocks are isolated and do not affect normal operations of the
devices Q0, Q1.
[0040] During a repair process (e.g. in power-on sequence)
according to an embodiment of the invention, the respective repair
block 100N, 100P is switched on, and the respective degraded
bipolar device Q0, Q1 is then biased at the repair mode (I.sub.br,
V.sub.BER, V.sub.CBR).
(2) Device Current Gain Monitor (FIGS. 5, 6, 7, 9, 11):
[0041] Add repair circuit blocks 100N, 100P into the arrangements
with the normal function blocks in the bipolar device circuit
arrangements, comprising emitter-bias blocks, base-bias blocks and
collector-bias blocks.
[0042] During normal operations of the devices Q0, Q1, the repair
blocks 100N, 100P do not operate and do not affect normal operation
of the devices Q0, Q1.
[0043] Repair mode is enabled when the monitored device degradation
exceeds a pre-determined level. For example, the degradation is
monitored for device Q0 by means of the monitor 200N, and any
decision that the degradation exceeds the predetermined level or
threshold is performed in the controller 300N.
[0044] During a repair method (i.e. when the repair mode is
triggered by the monitor and controller), the degraded bipolar
device Q0, Q1 is then biased at the repair mode (I.sub.br,
V.sub.BER, V.sub.CBR) and e.g. I.sub.br.apprxeq.several hundred
.mu.A.
[0045] (1) Device repair during power-on sequence (FIG. 8).
[0046] (2) On-demand device repair, started when device current
gain becomes less than a pre-determined value (FIG. 9).
[0047] Further detailed information for the circuit embodiments are
described in the following Sections 1 and 2.
Circuit Embodiment 1
Device Repair Circuit
[0048] In order to facilitate the repair function, a current source
is added to the base terminal of the device, as shown in FIG. 3(a),
3(b), 3(c), wherein the disclosed circuits 100N, 100P are the gain
recovery current circuits (including current sources) for the npn
and the pnp devices Q0, Q1, respectively (Circuit embodiment 1).
During the system initialization (i.e. power-on) sequence of FIG.
8, the input signal GRC_b is at a logic low for the npn (or GRC is
at a logic high for pnp) for a pre-defined period of time ranging
from 1 second to 100 seconds (depending on the repairing bias
voltages V.sub.eb--repair and V.sub.cb--repair), so that the extra
base current I.sub.br flows through the degraded bipolar transistor
for the recovery of the current gain .beta.. Device repair is
conducted each time during the power-on sequence, because in this
embodiment, there is no monitor circuit to detect the device
functionality.
[0049] In the embodiment of FIG. 3(a), the following are examples
of preferred components and parameters:
[0050] Q0-npn transistor BiCMOS6WL/8HP manufactured by IBM
Corporation;
[0051] emitter circuit includes, for example, a resistor having the
resistance value of several tens ohms; Collector load circuit
includes, for example, a resistor having the resistance value of
several kilo ohms;
[0052] P0 is a FET pMOSFET of BiCMOS6WL/8HP made by IBM; base bias
circuit includes, for example, a current source capable of
generating a current having a value (in a range from about 10 micro
amps to about 100 micro amps);
[0053] Vcc is typically in a range of 3 volts to 4 volts;
[0054] GRC.sub.--b is a signal within a range of 0 volts to
Vcc;
[0055] IN is a signal having the following range of values--several
micro volts to several hundred micro volts; and
[0056] Gain Recovery Source 100N generates a repair current
I.sub.br having a value of typically several hundred micro
amps.
[0057] Techniques for manufacturing the devices and other
components described in the present specification or shown in
figures are well within the skill in the art in view of the present
specification and figures, and need not be further discussed. See,
for example, VLSI Technology, by S. M. SZE, (2d Edition, ISBN
0-07-062735-5).
[0058] FIG. 3(b) shows an embodiment of the invention for a pnp
connected to a gain recovery circuit 100P and other components as
shown.
[0059] FIG. 3(c) is a more detailed schematic circuit diagram of a
preferred embodiment for the embodiment of the present invention
shown in FIG. 3(a). FIG. 3(c) shows components and component values
for an embodiment that can be implemented in BiCMOS8HP Technology
of IBM. For 6WL, the component values would differ, as would be
understood by those skilled in the art.
[0060] FIG. 4 is the detailed circuit diagram of the gain recovery
circuits (100N for npn type, and 100P for pnp type) shown in FIG.
3. I0n (for npn type) and I0p (for pnp type) are current sources;
P0, P1 (for npn type) and N0, N1 (for pnp type) form respective
current mirrors with the recovery base current adjustable depending
on the mirror device width ratio; P2 (for npn type) and N2 (for pnp
type) are switching FETs. When GRC_b is at logic low for npn (or
GRC is at logic high for pnp), the gain recovery current I.sub.br
flows to the respective bipolar device to be repaired.
[0061] In the embodiment of FIG. 4, the following are examples of
preferred components and parameters: [0062] P0, P1, P2 are FETs
such as pMOSFETs in BiCMOS6WL/8HP manufactured by IBM Corporation;
[0063] 10n is a current source capable of generating a current
having a value of, for example, approximately 10 .mu.A to
approximately 500 .mu.A. [0064] Rn is a resistor with the following
value, for example, of several hundred ohms.
[0065] The embodiments for a pnp transistor Q1 as shown in FIG. 3
and FIG. 4 can easily be configured by those skilled in the art in
view of the instant specification and figures, and thus need not be
further discussed in detail.
To Recapitulate:
[0066] During the normal operation of the circuits of FIG. 3(a) and
FIG. 3(b), the recovery block, both 100N for NPN and 100P for PNP,
is in off state and does not affect the normal operations of the
circuits. In the recovery mode, the recovery block 100N, 100P
generates a recovery current I.sub.br to the base of the targeted
bipolar device Q0, Q1, and forces the targeted device into a high
current forward active mode to recover the current gain
degradation. The detailed operation is shown in FIGS. 3(a) and 3(c)
for NPN device and in FIG. 3(b) for PNP device. As an example, for
NPN circuit, FIG. 3(a), we include one base current recovery
circuit block 100N in the standard bipolar circuit. During the
normal circuit operation, the recovery control signal GRC_b is in
logic high and the block 100N is in off state and has no impact on
the circuit normal operation. All other blocks in FIG. 3(a) are in
their normal operational conditions, such as base, emitter and
collector bias circuits which supply normal operational bias to the
bipolar device Q0. P0 is a pMOSFET which is switched on to supply
V.sub.cc for the bipolar device. The pad IN (FIG. 3(a)) is the
input AC signal pad for bipolar device Q0. In the recovery
operation mode, all of these circuits operate at the same
conditions as normal operation (except usually no AC signal is
applied to the pad IN; this normal state referenced to herein as
"idling" the transistor), except the recovery block 100N is turned
on by the control signal GRC.sub.--b, which is in logic low. During
this recovery mode, the current Ibr is supplied into the base of
device Q0. By adjusting the magnitude of the current Ibr from 100N,
we can force the targeted device Q0 into a forward high current
mode and recover the degradation caused by the normal operations.
During the device recovery mode, there is no AC signal from input
pad IN (i.e. transistor is "idling"); and V.sub.CB--repair is
approx. 0.5 volts to approx. 2.0 volts, V.sub.BE--repair is approx.
0.9 volts to approx. 1.2 volts, and the period for repair T.sub.r
(T.sub.R) is approximately 10 seconds to approximately 100
seconds.
[0067] The details of the recovery circuit blocks 100N, 100P, are
shown in FIG. 3(c) for the npn device and in FIG. 4. They are
current sources with switching transistors (pMOSFET P2 in 100N, and
nMOSFET N2 in 100P). The magnitudes of the recovery currents are
determined by the current source I0n, I0p and their current mirror
pair N0, N1 (P0, P1). Rn and Rp are the load resistors in the
range. Taking 100N as an example, during the normal circuit
operation, control signal GRC.sub.--b is in logical high and the
transistor P2 is in off state and there is no current to the
bipolar device. During the recovery model, GRC.sub.--b is in logic
low and switching transistor P2 is turned on. Thus, the recovery
current I.sub.br flows out into the targeted bipolar device.
Circuit Embodiment 2
Device Current Gain Monitor
[0068] FIG. 5 shows another circuit embodiment including a device
current gain monitor 200N employed to determine when the repair
process is needed. For simplicity, only monitor circuits for NPN
type is shown in FIG. 5 (the monitor circuits for PNP type are
similar and can be deduced straightforwardly by those skilled in
the art). The power down PFET (shown in FIG. 3(a)) is replaced by
block PD CM marked 200N. During system initialization (i.e.
power-on) sequence, the NPN device is at normal bias conditions,
and 200N mirrors the collector current Ic to the GRC_controller
block 300N when I.sub.c--det is at logic high. Because the base
current I.sub.b is known, the gain of the NPN device can be
directly calculated with Ic (i.e. current gain
.beta.=I.sub.c/I.sub.b). Block 300N checks the value of I.sub.c: if
I.sub.c is higher than a pre-defined threshold, no current gain
repair is needed; if I.sub.c is lower than the threshold, then 300N
starts a gain recovery procedure where a large base current
I.sub.br is input to the NPN device when GRC_b is at logic low for
a pre-defined period of time (T.sub.R) ranging from one second to
100 seconds (depending, for example, on the repairing bias voltages
V.sub.eb--repair and V.sub.cb--repair). When the current gain
repair procedure is completed, I.sub.c--det is at logic low and
GRC.sub.--b is at logic high, the circuit is thus switched back to
normal operational mode.
[0069] FIG. 6 is a detailed circuit diagram of block 200N shown
previously in FIG. 5. During Ic detection step of a current gain
repair procedure: I.sub.c--det is at logic high and I.sub.c--det_b
is at logic low, and thus P2 is turned off, the power down signal
PD has no control to P0. P4 and P5 are turned on, and P0 and P1
form a current mirror. Terminal C is connected to the NPN device,
the collector current is mirrored from the primary side PFET P0 to
the secondary PFET P1, the mirrored current is then output through
terminal Ic to 300N. When the detection step is complete:
I.sub.c--det is at logic low and I.sub.c det_b is at logic high, P2
is turned on, the signal PD has the control to P0. P4 and P5 are
turned off, P0 and P1 are disconnected, P3 is turned on, P1 is
turned off. The circuit is back to the normal operation.
[0070] The inverter is any conventional semiconductor inverter, in
the BiCMOS Technology, and should have the following parameters or
characteristics: threshold voltage set at, for example,
(Vcc/2).
[0071] FIG. 7 shows the current gain monitor 300N shown previously
in FIG. 5. During system initialization (or power-on) sequence, the
signal init is at logic high, the system clock clk determines the
input from AND gate U1 to the counter U2. The power on reset signal
por resets U2, and then U2 starts to count the clocks. The decoder
U3 generates two signals: Ic_det and Ic_check, and the timing of
the two signals is shown in the Timing chart in FIG. 7. When
Ic_det, the Ic current is mirrored to 300N input I_in of U4 from
200N. If the voltage on R0, due to Ic, is larger than the threshold
voltage of the voltage comparator U4, then the output of U4 is at
logic low which blocks the pulse of Ic_check, the RS register U6 is
thus not triggered, and GRC is at logic low while GRC.sub.--b is at
logic high. Under this situation, no current gain repair is
triggered. On the other hand, if the voltage on R0 is lower than
the threshold voltage, then the output of U4 is at logic high. When
both Ic_check and U4 output are at logic high, the output of U5
triggers U6, then GRC is at logic high, GRC_b is at logic low, and
the current gain repair procedure is initiated. When U2 is over
flowed, the signal "over flow" is sent to reset in U6, GRC is then
changed from logic high to logic low, while GRC.sub.--b is changed
from logic low to logic high. Under such a situation, the current
gain repair procedure is ended.
[0072] FIG. 8 is a high level flow diagram of a repair method
according to an embodiment of the invention, while FIG. 10 is a
more detailed flow diagram of the embodiment.
[0073] As shown in FIG. 10 the following steps are performed:
[0074] provide bipolar transistor. [0075] reverse bias EB junction
with a voltage and for a period so as to [0076] degrade current
gain I.sub.c/I.sub.b. [0077] idle the transistor. [0078] forward
bias EB junction with a first repair voltage while reverse [0079]
bias CB with a second repair voltage for period T.sub.R. [0080]
wherein first repair voltage, second repair voltage and T.sub.R
have the following relation as set forth in claim 1 of this
specification.
[0081] FIG. 9 is a high level flow diagram of a repair method
according to another embodiment of the present invention while FIG.
11 is a more detailed flow diagram of the embodiment.
[0082] As shown in FIG. 11: [0083] provide bipolar transistor.
[0084] reverse bias EB junction with a voltage and for a period so
as to [0085] degrade current gain I.sub.c/I.sub.b. [0086] idle the
transistor when degradation reaches threshold. [0087] forward bias
EB junction with a first repair voltage while reverse [0088] bias
CB with a second repair voltage for period T.sub.R. [0089] wherein
first repair voltage, second repair voltage and T.sub.R have the
relation as set forth in claim 1 of this specification. Bipolar
Device Recover Relationship with Active Power
More Rigorous Calculation of the Relationships Between T.sub.r,
V.sub.CBR, V.sub.EBR, W.sub.CER, I.sub.br
[0090] The recovery (.DELTA..beta.) of current gain degradation is
a function of transistor internal temperature T.sub.j and the time
(T.sub.R), and generally following equation (1):
.DELTA..beta. = A .times. - E a kT j .times. - .tau. T R , ( 1 )
##EQU00001##
[0091] Where .DELTA..beta. is in %, k is Boltzmann constant.
E.sub.a is the thermal recovery energy and .tau. is the recovery
time constant and both E.sub.a and .tau. are determined by the
device materials and detailed structure.
[0092] The transistor internal temperature T.sub.j can be raised by
the self-heating effect claimed in this invention as equation
(2).
T.sub.j=T.sub.am+R.sub.th.times.I.sub.c.times.V.sub.ce, (2)
[0093] Where T.sub.am is the ambient temperature and I.sub.c the
transistor collector current, and V.sub.ce is the voltage between
collector and emitter. R.sub.th is the device bipolar transistor
thermal resistance and determined by the detailed device
structure.
[0094] For a predetermined gain recovery (.DELTA..beta.) value, the
recovery time and the device forward active current and voltage has
following relation,
.tau. T R = ln ( A .DELTA..beta. ) - E a k .times. ( T am + R th
.times. I c .times. V ce ) , ( 3 ) ##EQU00002##
[0095] Or by the base current I.sub.b with current gain .beta.,
.tau. T R = ln ( A .DELTA..beta. ) - E a k .times. [ T am + R th
.times. .beta. .times. I b .times. ( V eb + V cb ) ] , ( 4 )
##EQU00003##
[0096] In both equations (3) and (4), the device parameters such as
A, k, E.sub.a, .tau., .beta. and R.sub.th can be readily determined
by the semiconductor manufacturer based on the semiconductor
technology (e.g. BiCMOS6WL) in which the bipolar transistor and
associated circuits will be manufactured and those skilled in the
art in view of the present specification and drawing figures. A,
for example, is a recovery factor such as 10E-4 for IBM's 6WL pnp
transistor.
[0097] As shown in equation (4), by increase the forward base
current I.sub.b, we can lower the recovery time T.sub.R.
[0098] In the example of FIG. 2) for pnp device in BiCMOS 6WL
technology of IBM, .tau.=5 sec, E.sub.a=0.2 eV, R.sub.th=6000 K/W,
it took 30 sec at recovery collector/emitter current of 3 mA to
achieve 10% gain recover. If we double the recovery collector
current or base current, the recovery time will be decrease to 5
sec. Every semiconductor technology has different parameters such
as A, B (discussed below), Rth. A and Rth are constants and are not
variable within a particular technology such as 6WL or 8HP. A and B
can be determined experimentally or empirically by those skilled in
the art in view of the present specification and figures. However,
these calculations demonstrate, even more particularly, further
preferred relationships applicable to this method and structure to
achieve the gain recovery according to the present invention.
A More Simplified Alternate Calculation of Relationships Between
T.sub.R, V.sub.CBR, V.sub.EBR, V.sub.CEF, I.sub.br
[0099] A more simplified relation between recovery time and active
power for the device is:
T.sub.R=A.times.(.DELTA..beta.).sup.2.times.exp[B/(Tam+Rth.times.Ie.time-
s.Vce)], (5).
[0100] Where parameter .DELTA..beta. is the percentage of the gain
recovery, Tam is the ambient temperature, Ie is the forward emitter
current in A, and Vce is the voltage in volt, Vce=Veb+Vbc, and Ie
is the emitter current in Amp, Rth is the self-heating thermal
resistance, in K/Watt. T.sub.R is the recovery time in seconds. The
parameter A is the recovery factor, and B is related to the
recovery thermal energy. Parameters A, B and Rth are determined by
the detailed device structures, such as material, device geometry
and package density. The inventors believe they can be readily
determined by the device manufacturer and supplied to circuit
designers in view of the present specification and figures.
[0101] In FIG. 2 as an example, for IBM's BiCMOS6WL PNP transistor,
A=8E-7, B=4600, and Rth=6000, it takes 30 seconds to recover 10% of
the current gain when the device is forward biased at 3 mA of
emitter current and 3.1V of Vce.
[0102] A, B, and Rth are fixed constants for 6WL and the
relationship (5), and can be determined empirically by those
skilled in the art in vew of the present specification and
figures.
[0103] While the present invention has been particularly shown and
described with respect to preferred embodiments thereof, it will be
understood by those skilled in the art that the foregoing and other
changes in forms and details may be made without departing from the
spirit and scope of the present invention. It is therefore intended
that the present invention not be limited to the exact forms and
details described and illustrated, but fall within the scope of the
appended claims.
* * * * *