U.S. patent application number 13/015833 was filed with the patent office on 2011-05-26 for dynamic random access memory device and method of determining refresh cycle thereof.
This patent application is currently assigned to SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Uk-Song KANG, Suk-Soo PYO.
Application Number | 20110122716 13/015833 |
Document ID | / |
Family ID | 40798234 |
Filed Date | 2011-05-26 |
United States Patent
Application |
20110122716 |
Kind Code |
A1 |
PYO; Suk-Soo ; et
al. |
May 26, 2011 |
DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD OF DETERMINING
REFRESH CYCLE THEREOF
Abstract
Provided are a dynamic random access memory device having
reduced power consumption and a method of determining a refresh
cycle of the dynamic random access memory device. The method
includes: selecting one or more monitoring bits during first
through n-th self refresh cycles, where "n" is a natural number
equal to or greater than one; detecting whether the monitoring bits
have errors during (n+1)-th through m-th self refresh cycles, where
"m" is a natural number equal to or greater than n+1; and adjusting
an (m+1)-th self refresh cycle according to whether the monitoring
bits have errors.
Inventors: |
PYO; Suk-Soo; (Yongin-si,
KR) ; KANG; Uk-Song; (Yongin-si, KR) |
Assignee: |
SAMSUNG ELECTRONICS CO.,
LTD.
Suwon-si
KR
|
Family ID: |
40798234 |
Appl. No.: |
13/015833 |
Filed: |
January 28, 2011 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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|
12329880 |
Dec 8, 2008 |
7894282 |
|
|
13015833 |
|
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|
11604708 |
Nov 28, 2006 |
7477563 |
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12329880 |
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Current U.S.
Class: |
365/200 ;
365/222 |
Current CPC
Class: |
G11C 11/406 20130101;
G11C 2211/4061 20130101; G11C 11/408 20130101; G11C 11/40615
20130101; G11C 2207/104 20130101 |
Class at
Publication: |
365/200 ;
365/222 |
International
Class: |
G11C 29/42 20060101
G11C029/42 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 29, 2005 |
KR |
10-2005-0115006 |
Claims
1. A method of determining a refresh cycle of a dynamic random
access memory device, the method comprising: selecting one or more
monitoring bits during first through n-th self refresh cycles,
where "n" is a natural number greater than two, and selecting the
monitoring bits comprises; determining during an a-th self refresh
cycle whether data bits stored in a memory array have errors using
the data bits and error correction code (ECC) bits corresponding to
the data bits, where "a" is a natural number which is equal to or
greater than one and less than "n", and determining during an
(a+1)-th self refresh cycle whether the data bits stored in the
memory array have errors using the data bits and the ECC bits
corresponding to the data bits when no errors occurred in the data
bits during the a-th self refresh cycle, wherein the (a+1)-th self
refresh cycle is longer than the ath self refresh cycle; detecting
whether the monitoring bits have errors during (n+1)-th through
m-th self refresh cycles, where "m" is a natural number equal to or
greater than n+1; and adjusting an (m+1)-th self refresh cycle
according to whether the monitoring bits have errors.
Description
[0001] This application is a continuation of U.S. patent
application Ser. No. 12/329,880 filed Dec. 8, 2008, which is a
continuation-in-part of U.S. patent application Ser. No.
11/604,708, filed Nov. 28, 2006 (now U.S. Pat. No. 7,477,563). The
collective subject matter of these applications is hereby
incorporated by reference in their entirety.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a dynamic random access
memory device and a method of determining a refresh cycle
thereof.
[0004] 2. Description of the Related Art
[0005] Dynamic random access memory devices include a plurality of
memory cells, each of which has a transistor that serves as a
switch and a capacitor that stores data. However, initial data
stored in the capacitor may be lost due to leakage current
generated in a PN junction of a MOS transistor. Accordingly, in
dynamic random access memory devices, a refresh operation is
required to recharge data in the memory cell before data is lost.
The refresh operation includes an automatic refresh operation, a
self refresh operation, and so on. In the self refresh operation,
refresh is performed while the dynamic random access memory device
sequentially changes an internal address in response to a refresh
instruction signal.
[0006] The self refresh operation is repeated according to an
internally defined cycle. The recharge cycle is referred to as a
refresh cycle tREF. The refresh cycle is determined based on the
data retention characteristics, which are not constant due to
changes in process, voltage, and temperature (PVT). However, during
this refresh operation, the dynamic random access memory device
consumes high standby power as compared to a static RAM (SRAM) or
flash memory device. Accordingly, there is a need for a refresh
cycle associated with a dynamic random access memory device which
requires reduced power consumption.
SUMMARY OF THE INVENTION
[0007] Aspects of the present invention provide a method of
determining a refresh cycle of a dynamic random access memory
device having reduced power consumption.
[0008] Aspects of the present invention also provide a dynamic
random access memory device having reduced power consumption.
[0009] However, aspects of the present invention are not restricted
to the one set forth herein. The above and other aspects of the
present invention will become more apparent to one of ordinary
skill in the art to which the present invention pertains by
referencing the detailed description of the present invention given
below.
[0010] According to an aspect of the present invention, there is
provided a method of determining a refresh cycle of a dynamic
random access memory device. The method includes: selecting one or
more monitoring bits during first through n-th self refresh cycles,
where "n" is a natural number equal to or greater than one;
detecting whether the monitoring bits have errors during (n+1)-th
through m-th self refresh cycles, where "m" is a natural number
equal to or greater than n+1; and adjusting an (m+1)-th self
refresh cycle according to whether the monitoring bits have
errors.
[0011] According to another aspect of the present invention, there
is provided a dynamic random access memory device including: an
error correction code (ECC) engine selecting one or more monitoring
bits during a self refresh period and detecting whether the
selected monitoring bits have errors; a monitoring address storage
unit storing monitoring addresses of the selected monitoring bits;
and a refresh cycle determining circuit adjusting a self refresh
cycle according to whether the selected monitoring bits have
errors.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] The above and other aspects and features of the present
invention will become more apparent by describing in detail
exemplary embodiments thereof with reference to the attached
drawings, in which:
[0013] FIG. 1 is a block diagram illustrating a dynamic random
access memory device according to an embodiment of the present
invention;
[0014] FIG. 2 is a block diagram illustrating a refresh cycle
determining circuit and an ECC engine shown in FIG. 1;
[0015] FIG. 3 is a circuit diagram illustrating a dynamic random
access memory device according to another embodiment of the present
invention;
[0016] FIG. 4 is a flow chart illustrating a method of determining
a refresh cycle of a dynamic random access memory device according
to an embodiment of the present invention;
[0017] FIG. 5 is a flow chart illustrating a method of determining
a refresh cycle of a dynamic random access memory device according
to another embodiment of the present invention;
[0018] FIG. 6 is a pause refresh characteristic diagram showing the
normalized number of accumulated error bits relative to a pause
time; and
[0019] FIG. 7 is a diagram illustrating a method of determining a
refresh cycle of a dynamic random access memory device according to
another embodiment of the present invention;
[0020] FIG. 8 is a block diagram illustrating a dynamic random
access memory device according to another embodiment of the present
invention;
[0021] FIG. 9 is a diagram illustrating a monitoring address
storage unit shown in FIG. 8; and
[0022] FIG. 10 is a diagram illustrating a refresh cycle
determining circuit shown in FIG. 8.
DETAILED DESCRIPTION OF THE INVENTION
[0023] Advantages and features of the present invention and methods
of accomplishing the same may be understood more readily by
reference to the following detailed description of exemplary
embodiments and the accompanying drawings. The present invention
may, however, be embodied in many different forms and should not be
construed as being limited to the embodiments set forth herein.
Rather, these embodiments are provided so that this disclosure will
be thorough and complete and will fully convey the concept of the
invention to those skilled in the art, and the present invention
will only be defined by the appended claims. Like reference
numerals refer to like elements throughout the specification.
[0024] It will be understood that when an element is referred to as
being "connected to" or "coupled to" another element, it can be
directly connected or coupled to the other element or intervening
elements may be present. In contrast, when an element is referred
to as being "directly connected to" or "directly coupled to"
another element, there are no intervening elements present. Like
numbers refer to like elements throughout. As used herein, the term
"and/or" includes any and all combinations of one or more of the
associated listed items.
[0025] It will be understood that, although the terms first,
second, third, etc., may be used herein to describe various
elements, components and/or sections, these elements, components
and/or sections should not be limited by these terms. These terms
are only used to distinguish one element, component or section from
another element, component or section. Thus, a first element,
component or section discussed below could be termed a second
element, component or section without departing from the teachings
of the present invention.
[0026] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated components, steps,
operations, and/or elements, but do not preclude the presence or
addition of one or more other components, steps, operations,
elements, and/or groups thereof.
[0027] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
invention belongs. It will be further understood that terms, such
as those defined in commonly used dictionaries, should be
interpreted as having a meaning that is consistent with their
meaning in the context of the relevant art and will not be
interpreted in an idealized or overly formal sense unless expressly
so defined herein.
[0028] FIG. 1 is a block diagram illustrating a dynamic random
access memory device according to an embodiment of the present
invention. Dynamic random access memory device 1 includes a memory
array 10, an ECC engine (Error Correction Code engine) 20, a
monitoring address storage unit 30, and a refresh cycle determining
circuit 40. Memory array 10 includes a plurality of memory cells
arranged in a two-dimensional manner (e.g. matrix configuration).
In the memory array 10 shown in FIG. 1, one memory bank is
illustrated, but multiple memory banks may be utilized. The memory
cells of memory array 10 arranged in a row are electrically
connected to word lines, and the memory cells arranged in a column
are electrically connected to bit lines (or complementary bit
lines).
[0029] Row decoder 12 selects a word line of memory array 10
according to the decoding result of a row address signal. During a
read operation, sense amplifier and write driver 14 amplifies a
potential difference of a pair of data lines individually connected
to a pair of bit lines to read data stored in a memory cell. During
a write operation, the sense amplifier and write driver 14
transmits predetermined data through the pair of data lines and the
pair of bit lines to store data in the memory cell. A column
decoder 16 communicates with memory array 10 to select a memory
cell, from and into which data is to be read and written according
to the decoding result of a column address signal.
[0030] When a refresh operation is not performed on a memory array
for a predetermined time, data stored in a memory cell capacitor of
the memory array may be lost. This refresh operation requires power
consumption. However, in order to reduce standby power consumption,
a self refresh cycle tREF needs to be performed using an error
detection and correction scheme without damaging data stored in the
memory cell capacitor. Additional information associated with the
stored data is required to detect and correct this data error. In
particular, multiple data bits and an ECC (Error Correction Code)
bit are stored in memory array 10. The ECC bit may be generated
using various types of encoding systems, such as hamming codes,
Huffman codes, parity codes, turbo codes, cyclic codes, low-density
parity-check codes, Reed-Muller codes, Reed-Solomon error
correction codes, or the like. ECC engine 20 generates an ECC bit
corresponding to the data bits using the data bits stored in the
memory array 10 before the memory array performs a self refresh
operation and stores the ECC bit in a predetermined region of the
memory array 10. One ECC bit can be added and stored in memory
array 10 for every 8-bit data bits. This ECC data bit is used
during the self refresh operation to determine the presence of a
data error and to correct any error in the data bits and/or at the
end of the self refresh operation. Additionally, errors are
detected in some, but not all of the data bits. This detection
method reduces power consumption as compared with operations that
detect errors in all of the data bits. The selected data bits and
the ECC bit stored in memory array 10 are hereinafter referred to
as "monitoring bits."
[0031] The monitoring bits are selected in advance through testing
and the addresses of the selected monitoring bits are stored in
monitoring address storage unit 30. The monitoring bits may be
selected in a tail-bits region, that is, a region including tail
bits, of a pause refresh characteristic diagram shown in FIG. 6.
Referring briefly to FIG. 6, the x axis represents a pause time and
the y axis represents the normalized number of accumulated error
bits. The tail-bits region denoted as a dotted line portion at
reference area "a" is defined as a region where an error occurs
earlier than a predicted pause time. That is, in the bits of the
tail-bits region, a leakage current easily occurs according to a
change in process, voltage, and temperature (PVT), as compared with
the bits outside of the tail-bits region "a". Therefore, the
characteristics of all of the data bits can be judged by monitoring
only the bits of the tail-bits region.
[0032] Multiple monitoring bits can be selected in the tail-bits
region such that the self refresh cycle tREF can be adjusted if a
first monitoring bit has an error and a second monitoring bit does
not have an error. Unlike the present embodiment of the invention,
when monitoring is not performed separately in the tail-bits
region, since the bits of the tail-bits region are more likely to
have an error, the self refresh cycle tREF needs to be set
sufficiently large such that none of the bits of the tail-bits
region have an error. In contrast, the present embodiment of the
invention corrects a predetermined number of data bits using the
ECC bit with low power consumption and thus, the self refresh cycle
tREF can be increased. In particular, a most leaky bit (bit(0)) and
a least leaky bit (bit(n)) in the tail-bits region can be included.
For example, the self refresh cycle tREF can be adjusted such that
the most leaky bit (bit(0)) has an error and the least leaky bit
(bit(n)) does not have an error.
[0033] Monitoring address storage unit 30 stores the addresses MA
of the monitoring bits. Monitoring address storage unit 30 may be
of a nonvolatile type, for example, the addresses may be stored
using a fuse. Refresh cycle determining circuit 40 adjusts the self
refresh cycle tREF depending on whether or not an error occurs in
the monitoring bits detected by ECC engine 20. In operation,
refresh cycle determining circuit 40 can be enabled in response to
a refresh instruction signal PRFH from a refresh mode entry
detecting circuit 50 which detects entry into the self refresh mode
and generates refresh instruction signal PRFH. Refresh mode entry
detecting circuit 50 detects the need to enter the self refresh
mode in response to an instruction defined by a combination of
multiple control signals /CS, /CAS, /RAS, /WE, CKE, and CLK and
supplies the high-level refresh instruction signal PRFH to refresh
cycle determining circuit 40. Specifically, if chip selection
signal /CS, column address strobe signal /CAS, row address strobe
signal /RAS, and clock enable signal CKE is low and a write enable
signal /WE is high, refresh instruction signal PRFH goes high. If
clock enable signal CKE is high, the refresh instruction signal
PRFH becomes low which represents the end of the self refresh
operation.
[0034] Refresh cycle determining circuit 40 sets an initial self
refresh cycle tREF and supplies a refresh cycle determination
signal CRFH to internal address generator 60. The internal address
generator 60 generates a pulse for each operation cycle during the
self refresh operation and generates counting addresses which
sequentially increase in response to the operation cycle pulses.
With a combination of the counting addresses, assigned row
addresses RA1 to RAn are sequentially switched. Here, the operation
cycle can be changed to correspond to the refresh cycle
determination signal CRFH. Refresh cycle determining circuit 40
also supplies a timing signal TS to monitoring address storage unit
30 whenever a predetermined time .DELTA.t passes. The monitoring
address storage unit 30 supplies the monitoring addresses MA to row
decoder 12 and column decoder 16 in response to timing signal TS.
Sense amplifier and write driver 14 supplies the monitoring bits
corresponding to the monitoring addresses MA to ECC engine 20 which
detects whether or not an error occurs in the monitoring bits. In
this case, the refresh cycle determining circuit 40 supplies the
refresh cycle determination signal CRFH adjusted according to the
detection result of ECC engine 20 to internal address generator 60
so as to adjust the self refresh cycle tREF. Since the timing
signal TS is supplied to monitoring address storage unit 30
whenever the predetermined time .DELTA.t passes, the self refresh
cycle tREF is adjusted whenever the predetermined time .DELTA.t
passes.
[0035] Referring to FIG. 2, refresh cycle determining circuit 40
includes an ECC arithmetic unit 42 and a timer 44. ECC engine 20
includes an ECC encoding and decoding unit 22 and an ECC correcting
unit 24. The ECC arithmetic unit 42 receives the refresh
instruction signal PRFH and causes ECC encoding and decoding unit
22 to generate an ECC bit corresponding to the data bits using the
data bits in memory array 10. The sense amplifier and write driver
14 writes the generated ECC bit into memory array 10. The ECC
arithmetic unit 42 sets the initial self refresh cycle tREF and
supplies refresh cycle determination signal CRFH corresponding to
the initial self refresh cycle tREF to internal address generator
60. ECC arithmetic unit 42 then supplies a previous timing signal
PTS to timer 44 which supplies the timing signal TS to the
monitoring address storage unit 30 in response to the previous
timing signal PTS whenever the predetermined time .DELTA.t passes.
In this case, the predetermined time .DELTA.t is not a constant
value, but may vary according to temperature or the application of
memory. Therefore, the monitoring bits in the memory array 10 are
read through the sense amplifier and write driver 14 whenever the
predetermined time .DELTA.t passes. The ECC encoding and decoding
unit 22 detects whether or not an error occurs in the read
monitoring bits. The ECC arithmetic unit 42 analyzes the detection
result of the ECC encoding and decoding unit 22 and supplies the
refresh cycle determination signal CRFH for adjusting the self
refresh cycle tREF to the internal address generator 60 again.
[0036] When the ECC arithmetic unit 42 determines that the self
refresh mode is exited, the ECC arithmetic unit 42 causes ECC
engine 20 to correct the error in the memory array 10. ECC encoding
and decoding unit 22 reads the data bits and the ECC bit in memory
array 10 so as to detect whether or not an error occurs. The ECC
correcting unit 24 corrects the data bits using the ECC bit and the
sense amplifier and write driver 14 rewrites the corrected data
bits.
[0037] Referring to FIG. 3, a dynamic random access memory device 2
utilizes a Read Only Memory (ROM) as monitoring address storage
unit 32. Refresh cycle determining circuit 40 supplies the timing
signal TS to monitoring address storage unit 32 through a
predetermined control pin 71 and the monitoring address storage
unit 32 supplies the monitoring addresses MA to row decoder 12 and
column decoder 16 through predetermined address pin 72.
[0038] FIG. 4 is a flow chart illustrating a method of determining
a refresh cycle of a dynamic random access memory device where two
bits are the selected monitoring bits. Reference is also made to
FIG. 1 as needed. Monitoring bits are selected and the monitoring
addresses MA are stored in monitoring address storage unit 30 at
step S105. These monitoring bits can be selected in the tail-bits
region of the pause refresh characteristic diagram and may be, for
example, the most leaky bit (bit(0)) and the least leaky bit
(bit(1)) in the tail-bits region, but are not limited thereto. A
determination is made at step S110 whether or not to enter the self
refresh mode. Specifically, the refresh mode entry detecting
circuit 50 detects entry to the self refresh mode in response to an
instruction defined by the combination of the multiple control
signals /CS, /CAS, /RAS, /WE, CKE, and CLK and supplies the refresh
instruction signal PRFH to refresh cycle determining circuit 40.
The ECC (Error correction code) bit is generated at step S120 where
refresh cycle determining circuit 40 causes ECC engine 20 to
generate an ECC bit corresponding to the data bits from memory
array 10.
[0039] At step S130, refresh cycle determining circuit 40 sets the
initial self refresh cycle tREF and supplies the refresh cycle
determination signal CRFH corresponding to the initial self refresh
cycle tREF to internal address generator 60. The internal address
generator 60 sequentially changes the row addresses RA1 to RAn for
each operation cycle, such that the self refresh operation is
performed. A determination is made at step S140 whether or not the
monitoring bit (bit(1)) is normal. Specifically, if an error occurs
in bit (bit(1)), the self refresh cycle tREF is decreased at step
S142. Even though bit(1) is less leaky as compared with bit(0),
since an error occurs the occurrence of the error is reduced by
decreasing the self refresh cycle tREF. After the self refresh
cycle tREF decreases, a determination is made again whether or not
the monitoring bit (bit(1)) is normal. If the monitoring bit
(bit(1)) is normal, step S150 determines if monitoring bit (bit(0))
is normal. Specifically, if bit(0) is normal, the self refresh
cycle tREF increases at step S154. Even though bit bit(0) is more
leaky as compared with bit(1), since it is normal (that is, both of
bit(0) and bit(1) are normal), it is determined that the self
refresh cycle tREF is too short, and thus the self refresh cycle
tREF increases.
[0040] If an error occurs in the monitoring bit bit(0), the self
refresh cycle tREF is fixed at step S156. That is, the self refresh
cycle tREF is set to satisfy the condition
tREF(0)<tREF<tREF(1). Here, tREF(1) and tREF(0) means self
refresh cycles that cause errors to occur in bit(1) and bit(0),
respectively. When the self refresh cycle tREF is determined, the
refresh cycle determining circuit 40 supplies the refresh cycle
determination signal CRFH to internal address generator 60 such
that self refresh operation is performed based on the determined
self refresh cycle tREF. At step S160, the process waits for the
predetermined time .DELTA.t. Here, the predetermined time .DELTA.t
is not a constant value, but can vary according to temperature or
the application of memory. Next, a determination is made at step
S170 whether or not the self refresh mode is to be exited.
Specifically, for example, if clock enable signal CKE becomes high,
the refresh instruction signal PRFH becomes low which represents
the end of the self refresh operation. At step S180, data is
corrected before the self refresh mode is exited. ECC engine 20
corrects the data bits using the ECC bit in memory array 10. In
this manner, the self refresh cycle tREF can be actively changed
with respect to changes in PVT since a determination is made
whether or not the error occurs in the prescribed multiple
monitoring bits whenever the predetermined time .DELTA.t passes and
the self refresh cycle tREF is adjusted. Further, since the self
refresh cycle tREF is extended to the maximum refresh cycle,
standby power consumption of the dynamic random access memory
device is minimized.
[0041] FIG. 5 is a flow chart illustrating a method of determining
a refresh cycle of a dynamic random access memory device.
Monitoring bits are selected and the monitoring addresses MA are
stored in monitoring address storage unit 30 at step S105. The
multiple monitoring bits are selected from the tail-bits region of
the pause refresh characteristic diagram and multiple monitoring
bits are represented as bit(0), bit(1), . . . , and bit(n) in a
more leaky order. At step S110, it is detected whether or not the
self refresh mode is to be entered, and an ECC bit is generated at
step S120. Subsequently, the initial self refresh cycle tREF is set
at step S130. A determination is made at step S240 to determine
whether or not the monitoring bit (bit(n)) is normal. When the
error occurs in bit(n), the self refresh cycle tREF decreases at
step S242. When bit(n) is normal, i=n-1 is substituted with n at
step S244.
[0042] At step S250, a determination is made whether or not bit(i)
is normal (that is, whether or not bit(n-1) is normal). If bit(n-1)
is normal, a check is performed to determine if i=0 at step S251,
or in other words, whether or not there are remaining bits to be
monitored. When there are remaining bits to be monitored, the
equation i=i-1 is performed at step S252, and it is concluded
whether or not bit(i) is normal (that is, whether or not bit(n-2)
is normal) at step S250. When all of the monitoring bits bit(0),
bit(1), . . . , and bit(n) are normal, the self refresh cycle tREF
increases at step S254. If an error occurs in bit(i), the self
refresh cycle tREF is corrected at step S256. That is, the self
refresh cycle tREF is determined to satisfy the condition
tREF(i)<tREF<tREF(i+1) where tREF(i+1) and tREF(i) means self
refresh cycles that cause errors to occur in bit(i+1) and bit(i),
respectively. Next, the process waits for the predetermined time
.DELTA.t step S160 and it is determined, at step S170, whether or
not the self refresh mode is to be exited. Subsequently, data is
corrected before the self refresh mode is exited at step S180.
[0043] Alternatively, the process may also be configured to
determine whether or not an error occurs in the multiple monitoring
bits selected in the tail-bits region in a non-leaky sequence; a
leaky sequence or in randomly selected monitoring bits. This
determination may also be performed using a combination of the
non-leaky and leaky sequences.
[0044] In this manner, since the self refresh cycle of the memory
device is adjusted by detecting for each predetermined time,
whether or not an error of the prescribed multiple monitoring bits
occurs, the self refresh cycle can be actively changed according to
the change in PVT. In addition, since the self refresh cycle
extends to the maximum prescribed time period, power consumption
for the device is minimized.
[0045] FIG. 7 is a diagram illustrating a method of determining a
refresh cycle of a dynamic random access memory device according to
another embodiment of the present invention.
[0046] Referring to FIG. 7, one or more monitoring bits are
selected during a self refresh period in the present embodiment. On
the other hand, in the previous embodiment of the present invention
(see FIG. 1), one or more monitoring bits are selected in advance
through testing, and the addresses of the selected monitoring bits
are stored in the monitoring address storage unit 30 of a
nonvolatile type.
[0047] In the present embodiment, when the self refresh period
begins, one or more monitoring bits are selected during the first
few self refresh cycles (e.g., first through fourth self refresh
cycles SR1 through SR4) at step I. Step I is referred to as an auto
sampling mode (ASM). During a self refresh cycle, all word lines of
a memory array sequentially perform a self refresh operation.
[0048] Specifically, during the first self refresh cycle SR1, it is
determined whether data bits stored in the memory array have errors
by using the data bits and ECC bits corresponding to the data bits.
For example, data bits read from the memory array may be corrected
by using ECC bits corresponding to the data bits. When the
corrected data bits are identical to the data bits before being
corrected (that is, the data bits read from the memory array), the
read data bits may not have errors. However, when the corrected
data bits are different from the read data bits, it may be
determined that the read data bits have errors. The data bits
having errors may be corrected through a write-back operation,
which will be described later. The length of the first self refresh
cycle SR may be shortest (that is, T0 in FIG. 7).
[0049] When no errors occur in the data bits, the length of the
second self refresh cycle SR2 becomes T1 which is longer than the
length (T0) of the first self refresh cycle SR1. Again, during the
second self refresh cycle SR2, it is determined whether the data
bits stored in the memory array have errors by using the data bits
and the ECC bits corresponding to the data bits. Since the second
self refresh cycle SR2 is longer than the first self refresh cycle
SR1, there is a higher possibility that errors occur in the data
bits during the second self refresh cycle SR2.
[0050] In this way, the length of the self refresh cycle is
continuously increased until errors occur in certain data bits. For
example, the length of the third self refresh cycle SR3 becomes T2
which is longer than the length (T1) of the second self refresh
cycle SR2, and the length of the fourth self refresh cycle SR4
becomes T3 which is longer than the length (T2) of the third self
refresh cycle SR3. In FIG. 7, errors occur during the fourth self
refresh cycle SR4.
[0051] When an error occurs in a data bit, the data bit having the
error and an ECC bit corresponding to the data bit are defined as
monitoring bits, and the addresses of the monitoring bits are
stored in a monitoring address storage unit 330 (see FIG. 8).
[0052] Here, when errors occur in some of the data bits stored in
the memory array during the fourth self refresh cycle SR4, not all
of the data bits having the errors and ECC bits corresponding to
the data bits may be defined as monitoring bits. That is, only some
of the data bits having the errors and ECC bits corresponding to
the data bits may be defined as monitoring bits. For example, only
several data bits having errors may be defined as monitoring bits.
This is because data bits having errors are highly likely to
correspond to a region having poor data retention characteristics
in the dynamic random access memory device.
[0053] In FIG. 7, a case where the length of the self refresh cycle
is continuously increased because no monitoring bits are selected
during the first through third self refresh cycles SR1 through SR3
is illustrated as an example. However, the present invention is not
limited thereto. For example, when a data bit having an error is
detected during the first self refresh cycle SR1, a monitoring bit
may be selected during the first self refresh cycle SR1.
[0054] In fifth through tenth self refresh cycles SR5 through SR10
which are performed after step I (ASM), it is determined at step II
whether one or more monitoring bits selected at step I have
errors.
[0055] Specifically, not all of the data bits stored in the memory
array are checked to determine whether the data bits have errors.
Instead, only some of the data bits stored in the memory array are
checked to determine whether the checked data bits have errors, and
the length of the self refresh cycle is adjusted based on the
determination result. This is because large power consumption is
required when all of the data bits stored in the memory array are
checked to determine whether the data bits have errors.
[0056] At step III, the length of an eleventh self refresh cycle
SR11 is adjusted according to whether the selected monitoring bits
have errors.
[0057] For example, when errors continuously occur in the selected
monitoring bits during the fifth through tenth self refresh cycles
SR5 through SR10, it is determined that the current length of the
self refresh cycle is not appropriate. Thus, the current length of
the self refresh cycle is reduced to T2 as shown in FIG. 7. That
is, the eleventh self refresh cycle SR11 is shorter than the fifth
through tenth self refresh cycles SR5 through SR10.
[0058] Although not shown in the drawing, when errors do not occur
during the fifth through tenth self refresh cycles SR5 through
SR10, it may be determined that the current length of the self
refresh cycle should be increased. Thus, the current length of the
self refresh cycle may be increased so that the eleventh self
refresh cycle SR11 is longer than the fifth through tenth self
refresh cycles SR5 through SR10.
[0059] In FIG. 7, the selected monitoring bits are checked during
six self refresh cycles (i.e., the fifth through tenth self refresh
cycles SR5 through SR10) to determine whether they continuously
have errors. However, the present invention is not limited thereto.
For example, the selected monitoring bits may be checked during one
self refresh cycle or more than seven self refresh cycles to
determine whether they continuously have errors.
[0060] In summary, one or more monitoring bits may be selected
during first through n.sup.th self refresh cycles ("n" is a natural
number equal to or greater than one) as follows.
[0061] When "n" is a natural number greater than two, it is
determined during an a.sup.th self refresh cycle ("a" is a natural
number which is equal to or greater than one and less than "n")
whether data bits stored in a memory array have errors by using the
data bits and ECC bits corresponding to the data bits.
[0062] When no errors occur in the data bits, it is determined
during an (a+1).sup.th self refresh cycle whether the data bits
stored in the memory array have errors by using the data bits and
the ECC bits corresponding to the data bits. Here, the (a+1).sup.th
self refresh cycle is longer than the a.sup.th self refresh
cycle.
[0063] When errors occur in some of the data bits, the data bits
having the errors and ECC bits corresponding to the data bits are
defined as monitoring bits, and addresses of the monitoring bits
are stored in a monitoring address storage unit.
[0064] FIG. 8 is a block diagram illustrating a dynamic random
access memory device 3 according to another embodiment of the
present invention. FIG. 8 is a specific example which implements
the refresh cycle determination method described above with
reference to FIG. 7. FIG. 9 is a diagram illustrating a monitoring
address storage unit 330 shown in FIG. 8. FIG. 10 is a diagram
illustrating a refresh cycle determining circuit 340 shown in FIG.
8. For simplicity, elements substantially identical to those
described above with reference to FIG. 1 are indicated by like
reference numerals, and thus their description will be omitted.
[0065] Referring to FIG. 8, the dynamic random access memory device
3 according to the present embodiment includes a memory array 10,
an ECC engine 320, the monitoring address storage unit 330, and the
refresh cycle determining circuit 340.
[0066] The ECC engine 320 selects one or more monitoring bits and
detects whether the selected monitoring bits have errors during a
self refresh period (as described above with reference to FIG.
7).
[0067] Specifically, the ECC engine 320 selects one or more
monitoring bits during first through n.sup.th self refresh cycles
("n" is a natural number equal to or greater) than one) and detects
whether the selected monitoring bits have errors during
(n+1).sup.th through m.sup.th self refresh cycles ("m" is a natural
number equal to or greater than n+1).
[0068] When data bits stored in the memory array 10 are checked to
select one or more monitoring bits, if no errors occur in the data
bits during an a.sup.th self refresh cycle, it is determined during
an (a+1).sup.th self refresh cycle whether the data bits stored in
the memory array 10 have errors by using the data bits and ECC bits
corresponding to the data bits. In this case, the (a+1).sup.th self
refresh cycle is longer than the a.sup.th self refresh cycle. When
data bits having errors are detected, the data bits and ECC bits
corresponding to the data bits are defined as monitoring bits, and
addresses of the monitoring bits are stored in the monitoring
address storage unit 330 (that is, a plurality of monitoring
address registers 332).
[0069] The monitoring address storage unit 330 stores addresses of
one or more selected monitoring bits. The monitoring address
storage unit 330 may include the monitoring address registers 332,
a plurality of sampling flag registers 334, and a plurality of
error flag registers 336.
[0070] The monitoring address registers 332 store a plurality of
monitoring addresses corresponding to a plurality of monitoring
bits, respectively.
[0071] The sampling flag registers 334 correspond to the monitoring
address registers 332, respectively, and store sampling flags
indicating whether the monitoring addresses are stored in the
monitoring address registers 332, respectively. For example, when a
monitoring address is stored in one of the monitoring address
registers 332, the sampling flag may be one. Otherwise, the
sampling flag may be zero.
[0072] The error flag registers 336 correspond to the monitoring
address registers 332, respectively, and store error flags
indicating whether the monitoring bits, which correspond
respectively to the monitoring addresses stored in the monitoring
address registers 332, have errors. For example, when a monitoring
bit, which corresponds to a monitoring address stored during a
refresh cycle (e.g., the fifth self refresh cycle SR5), has an
error, the error flag may be one. Otherwise, the error flag may be
zero.
[0073] In FIG. 9, ten monitoring address registers 330, ten
sampling flag registers 334, and ten error flag registers 336 are
illustrated. However, the present invention is not limited thereto.
When necessary, the number of the monitoring address registers 330,
the number of the sampling flag registers 334, and the number of
the error flag registers 336 may be more than or less than ten. In
addition, each of the monitoring address registers 332, each of the
sampling flag registers 334, and each of the error flag registers
have 8 bits, 1 bit, and 1 bit, respectively. However, the present
invention is not limited thereto.
[0074] In FIG. 1, since the addresses of monitoring bits selected
through testing are stored in the monitoring address storage unit
30, the monitoring address storage unit 30 may be of a nonvolatile
type. However, in FIG. 8, one or more monitoring bits are selected
during each self refresh cycle (that is, ASM), and monitoring
addresses of the monitoring bits are stored. Thus, the monitoring
address storage unit 330 may not necessarily be of a nonvolatile
type. That is, the monitoring address storage unit 330 may also be
of a volatile type.
[0075] The refresh cycle determining circuit 340 adjusts a self
refresh cycle according to whether monitoring bits have errors.
[0076] Specifically, the refresh cycle determining circuit 340
adjusts an (m+1).sup.th self refresh cycle according to whether one
or more monitoring bits detected during the (n+1).sup.th through
m.sup.th self refresh cycles ("m" is a natural number equal to or
greater than n+1) have errors.
[0077] Referring to FIG. 10, the refresh cycle determining circuit
340 may include an RS latch 341, AND gates 342, 344, 345, 347, 348
and 349, an error counter 343, and a delay unit 346. In addition,
the following signals may be used.
[0078] A signal SR_END indicates the end of a self refresh
operation, and a signal SRP_END indicates the end of a self refresh
cycle. The signal SRP_END may be provided by, e.g., an internal
address generator 360.
[0079] A signal ER_SUM may be an OR combination signal of error
flags stored in the error flag registers 336. That is, when any one
of the error flags is one, the signal ER_SUM is one. A signal ER is
generated whenever the ECC engine 320 detects an error. When the
ECC engine 320 detects an error, the signal ER is one.
[0080] A signal ADDR_MATCH indicates whether an address, at which
the self refresh operation is currently being performed, matches an
address stored in one of the monitoring address registers 332. When
the addresses match, the signal ADDR_MATCH is one.
[0081] A signal ASM indicates the end of an ASM operation (that is,
monitoring addresses are stored in the monitoring address registers
332). When the ASM operation ends, the signal ASM becomes one.
[0082] A signal SRP_DCM instructs a decrease of the self refresh
cycle, and a signal SRP_ICM instructs an increase of the self
refresh cycle. The signals SRP_DCM and SRP_ICM are transmitted to
the internal address generator 60 so as to adjust the self refresh
cycle.
[0083] A signal WRITE instructs a wrote-back operation. That is, in
response to the signal WRITE, a data bit having an error is
corrected by using an ECC bit corresponding to the data bit, and
then the corrected data bit is re-written. A signal REFRESH simply
instructs a self refresh operation (without the write-back
operation). A signal READ instructs monitoring data to be read in
order to determine whether monitoring data has an error.
[0084] The self refresh cycle may be increased or reduced as
follows. When a self refresh cycle ends, the signal SRP_END becomes
one. When one or more errors occurred during the self refresh
cycle, the signal ER_SUM becomes one. Accordingly, an output of the
AND gate 342 becomes one. In this case, the error counter 343
counts the number of times that the output of the AND gate 342
becomes one. When the number of times that the output of the AND
gate 342 becomes one exceeds a predetermined value, the error
counter 343 enables the signal SRP_DCM. For example, when errors
occurred during six cycles (as described above with reference to
FIG. 7), the signal SRP_DCM may be enabled. Since the signal
SRP_DCM is enabled, the length of the self refresh cycle is
reduced.
[0085] On the other hand, when the signal SRP_END becomes one as
the self refresh cycle ends, if the signal ER_SUM becomes zero
since no errors occurred during the self refresh cycle, the signal
SRP_ICM is enabled. That is, since the signal SRP_ICM is enabled,
the length of the self refresh cycle is increased.
[0086] The self refresh operation is adjusted as follows. When an
address, at which the self refresh operation is currently being
performed, matches an address stored in a corresponding one of the
monitoring address registers 332, the signal ADDR_MATCH becomes
one. In this case, the signal READ is enabled. Accordingly, data is
read from the address at which the self refresh operation is
currently being performed, and the ECC engine 320 determines
whether the data has an error.
[0087] On the other hand, when the address, at which the self
refresh operation is currently being performed, does not match the
address stored in the corresponding one of the monitoring address
registers 332, the signal ADDR_MATCH becomes zero. In this case,
the signal REFRESH is enabled. Accordingly, the ECC engine 320 does
not determine whether the data has an error. Instead, the ECC
engine 320 simply refreshes the data of the address at which the
self refresh operation is currently being performed.
[0088] When the signal ER is one, a data bit corresponding to the
address, at which the self refresh operation is currently being
performed, has an error. Thus, the signal WRITE is enabled after
being delayed by the delay unit 346 for a predetermined period of
time, and the corrected data is written back to the data bit having
an error.
[0089] While the present invention has been particularly shown and
described with reference to exemplary embodiments thereof, it will
be understood by those of ordinary skill in the art that various
changes in form and detail may be made therein without departing
from the spirit and scope of the present invention as defined by
the following claims. The exemplary embodiments should be
considered in a descriptive sense only and not for purposes of
limitation.
* * * * *