U.S. patent application number 12/977384 was filed with the patent office on 2011-04-21 for probe storage container, prober apparatus, probe arranging method and manufacturing method of probe storage container.
This patent application is currently assigned to Hitachi High-Technologies Corporation. Invention is credited to Masanori Gunji, Shigeru Izawa, Katsunori Nakajima, Yasuhiko Nara, Tsutomu Saito.
Application Number | 20110093991 12/977384 |
Document ID | / |
Family ID | 39715160 |
Filed Date | 2011-04-21 |
United States Patent
Application |
20110093991 |
Kind Code |
A1 |
Gunji; Masanori ; et
al. |
April 21, 2011 |
Probe Storage Container, Prober Apparatus, Probe Arranging Method
and Manufacturing Method of Probe Storage Container
Abstract
An object of the present invention relates to an arrangement of
a manufactured probe in a prober apparatus without being exposed to
an atmospheric air. The present invention relates to a probe
storage container which can supply a probe in a prober apparatus
without being exposed to an atmospheric air. Preferably, the probe
is stored in the probe storage container by removing an oxide film
in a leading end portion of the probe in accordance with a dry
treatment using an ion source or the like, without being exposed to
the atmospheric air. In accordance with the present invention, it
is possible to replace and attach the probe with respect to the
prober apparatus without being exposed to the atmospheric air, and
it is possible to avoid a formation of the oxide film on a surface
of the probe. Further, a worker attaching the probe to the prober
apparatus can work without being directly in contact with the
probe, and it is possible to prevent the leading end portion of the
probe from being broken. Accordingly, it is possible to stably
measure an electric characteristic of a semiconductor device or the
like on the wafer.
Inventors: |
Gunji; Masanori;
(Hitachinaka, JP) ; Nakajima; Katsunori; (Hitachi,
JP) ; Nara; Yasuhiko; (Hitachinaka, JP) ;
Saito; Tsutomu; (Hitachinaka, JP) ; Izawa;
Shigeru; (Mito, JP) |
Assignee: |
Hitachi High-Technologies
Corporation
Minato-ku
JP
|
Family ID: |
39715160 |
Appl. No.: |
12/977384 |
Filed: |
December 23, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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12027644 |
Feb 7, 2008 |
7875156 |
|
|
12977384 |
|
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Current U.S.
Class: |
850/53 |
Current CPC
Class: |
Y10T 29/49826 20150115;
G01R 1/06705 20130101 |
Class at
Publication: |
850/53 |
International
Class: |
G01Q 70/02 20100101
G01Q070/02 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 28, 2007 |
JP |
2007-049929 |
Claims
1. A probe storage container storing a probe used in a prober
apparatus, comprising: a probe holding portion for holding said
probe at a predetermined position in an inner portion of said
container; a reference portion for positioning said container with
respect to the prober apparatus; and a lid portion capable of
sealing an inner portion in which said probe is stored.
2. A probe storage container as claimed in claim 1, wherein an
oxide film is removed at least in a leading end portion of said
probe.
3. A probe storage container as claimed in claim 1, wherein the
other portions of said probe than the portion in which the oxide
film is removed are coated by a gold.
4. A probe storage container as claimed in claim 1, wherein a
leading end portion of said probe is made of a tungsten or a
tungsten alloy.
5. A probe storage container as claimed in claim 1, wherein the
probe storage container is provided with an intake port for making
an inner portion of the container in a vacuum state, and a valve
for shutting off the inner portion of the container from an ambient
air.
6. A probe storage container as claimed in claim 1, wherein an
inner portion of the container is filled with an inert gas.
7. A probe storage container as claimed in claim 1, wherein an
inner portion of the container is filled with a nitrogen gas.
8. A prober apparatus comprising: a chamber in which a sample and a
probe are arranged; and a probe supply chamber provided with a door
portion to the chamber, wherein an inner side of said probe supply
chamber comprises: a holding mechanism for holding a probe storage
container for storing a probe used for the prober apparatus at a
predetermined position; a container opening and closing mechanism
capable of opening and closing a lid portion of the probe storage
container; a probe supply mechanism capable of arranging the probe
in the probe storage container in the chamber; and an exhausting
mechanism capable of exhausting an inner portion of the probe
supply chamber.
9. A prober apparatus as claimed in claim 8, wherein an oxide film
is removed at least in a leading end portion of said probe.
10. A prober apparatus as claimed in claim 8, wherein the other
portions of said probe than the portion in which the oxide film is
removed are coated by a gold.
11. A prober apparatus as claimed in claim 8, wherein a leading end
portion of said probe is made of a tungsten or a tungsten
alloy.
12. A prober apparatus as claimed in claim 8, wherein the probe
storage container is provided with an intake port for making an
inner portion of the container in a vacuum state, and a valve for
shutting off the inner portion of the container from an ambient
air.
13. A prober apparatus as claimed in claim 8, wherein an inner
portion of the container is filled with an inert gas.
14. A prober apparatus as claimed in claim 8, wherein an inner
portion of the container is filled with a nitrogen gas.
15. A probe arranging method of arranging a probe in a prober
apparatus, comprising the steps of: holding a probe storage
container for storing the probe at a predetermined position within
a probe supply chamber of the prober apparatus; exhausting an inner
side of the probe supply chamber; opening a lid portion of the
probe storage container within the probe supply chamber; and
arranging the probe in the probe storage container in a chamber of
the prober apparatus.
16. A probe arranging method as claimed in claim 15, wherein an
oxide film is removed at least in a leading end portion of said
probe.
17. A probe arranging method as claimed in claim 15, wherein the
other portions of said probe than the portion in which the oxide
film is removed are coated by a gold.
18. A probe arranging method as claimed in claim 15, wherein a
leading end portion of said probe is made of a tungsten or a
tungsten alloy.
19. A probe arranging method as claimed in claim 15, wherein the
probe storage container is provided with an intake port for making
an inner portion of the container in a vacuum state, and a valve
for shutting off the inner portion of the container from an ambient
air.
20. A probe arranging method as claimed in claim 15, wherein an
inner portion of the container is filled with an inert gas.
21. A probe arranging method as claimed in claim 15, wherein an
inner portion of the container is filled with a nitrogen gas.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a method of storing and
manufacturing a prober apparatus which checks a position of a
refined wiring or the like on a semiconductor integrated circuit or
the like by a scanning electron microscope, and measures an
electric characteristic by bringing a probe into contact with a
wiring electrode or the like while monitoring a state by the
scanning electron microscope.
[0003] 2. Description of the Related Art
[0004] The prober apparatus is an apparatus for measuring an
electric characteristic by bringing a probe into contact with a
wiring position while observing a refined wiring position on a
semiconductor integrated circuit by a microscope. In recent years,
a measured portion becomes refined on the basis of a
micro-fabrication of the semiconductor, and can not be checked by
an optical microscope, and a scanning electron microscope utilizing
an electron beam has been utilized. As a material of the probe, it
is demanded that the material has a durability and is hard, and
further has a resistance against the electron beam, and a tungsten
or a tungsten alloy has been generally utilized.
[0005] The tungsten is easily tapered its leading end portion in
accordance with an electrolytic etching by an aqueous sodium
hydroxide or an aqueous potassium hydroxide, however, has a defect
that the tungsten tends to be oxidized in an atmospheric air.
[0006] Accordingly, in order to increase a reliability of an
electric contact of the tungsten probe, as a means end for
achieving an oxidation prevention of a surface, there is shown a
method of coating in accordance with a plating after forming a
leading end in a predetermined shape, and a method of removing an
oxidation preventing layer just before using a metal probe to which
the oxidation preventing layer is applied so as to use. Further, as
a method of storing a powder and granular material and a food
product, there is shown a method of storing by a vacuum
container.
[0007] Patent Document 1: Japanese Patent Application Laid-Open No.
6-109415
[0008] Patent Document 2: Japanese Patent Application Laid-Open No.
6-66557
[0009] Patent Document 3: Japanese Patent Application Laid-Open No.
9-262079
SUMMARY OF THE INVENTION
[0010] As a result of an eager study of the inventor of the present
invention, the following problems have been known.
[0011] In the probe of the prober apparatus, the electric
characteristic of the electrode on the wafer can not be measured by
an oxide film formed in the leading end portion in the process of
manufacturing the probe. In particular, in the case that the
measured material is refined or an interval between the measured
materials becomes narrow, it is necessary to taper the leading end
portion of the probe, however, if a radius of curvature of the
leading end portion becomes equal to or less than 50 nm, it is
impossible to secure a conduction with the measured material due to
the oxide film on a surface of the leading end even if the tapered
leading end portion is formed.
[0012] On the other hand, in the probe of the prober apparatus, it
is necessary to break a natural oxide film formed in the measured
material by being directly brought into contact with the measured
material, and it is desirable to employ a hard material having an
improved conductivity and a durability, and further having an
improved electron beam resistance. As means for securing the
conductivity of the probe, there is a method of coating the surface
in accordance with a plating or the like, however, the plating
material is peeled at a time of the contact with the measured
material, and there is generated a phenomenon that the electrodes
are short circuited by the peeled plating material.
[0013] On the other hand, in the metal probe in which the oxidation
preventing film such as the resin or the like is applied to the
leading end portion, it is necessary to remove the film just before
the use. However, since a series of works are executed in the
atmospheric air, there is a risk that the natural oxide film is
formed in the probe leading end portion in some working environment
state, working time and attaching time to the prober apparatus, or
a foreign material is attached to the leading end portion in the
process of removing the oxide film. Accordingly, the greatest care
is necessary for the oxide film removing process. Further, there is
a possibility that the leading end portion is broken by dropping
the probe or making the leading end portion of the probe in contact
at a time of attaching the probe.
[0014] An object of the present invention relates to an arrangement
of a manufactured probe in a prober apparatus without being exposed
to an atmospheric air.
[0015] The present invention relates to a probe storage container
which can supply a probe in a prober apparatus without being
exposed to an atmospheric air.
[0016] Preferably, the probe is stored in the probe storage
container by removing an oxide film in a leading end portion of the
probe in accordance with a dry treatment using an ion source or the
like, without being exposed to the atmospheric air.
[0017] In accordance with the present invention, it is possible to
replace and attach the probe with respect to the prober apparatus
without being exposed to the atmospheric air, and it is possible to
avoid a formation of the oxide film on a surface of the probe.
Further, a worker attaching the probe to the prober apparatus can
work without being directly in contact with the probe, and it is
possible to prevent the leading end portion of the probe from being
broken. Accordingly, it is possible to stably measure an electric
characteristic of a semiconductor device or the like on the
wafer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] FIG. 1 is a prober apparatus mounting a scanning electron
microscope therein in accordance with a first embodiment;
[0019] FIG. 2 is a schematic view of a structure of a probe storage
container in accordance with the first embodiment;
[0020] FIG. 3 is a cross sectional view of the probe storage
container in accordance with the first embodiment;
[0021] FIG. 4 is a view showing an applied example of a milling
apparatus in accordance with the first embodiment; and
[0022] FIG. 5 is a schematic view of the prober apparatus using the
probe storage container in accordance with the first
embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
First Embodiment
[0023] In the present embodiment, in order to prevent an exposure
to the atmospheric air after removing an oxide film in a leading
end portion of a probe of a prober apparatus, a probe storage
container capable of sealing an inner portion is used, a storage
and supply chamber is provided in a prober apparatus having an
oxide film removing step, a leading end portion shape measuring
step and a scanning electron microscope, and an attachment of the
probe to the prober apparatus from a removal of the oxide film is
executed without being exposed to the atmospheric air.
[0024] FIG. 1 shows an outline of a prober apparatus mounting a
scanning electron microscope in accordance with the present
embodiment. The apparatus is provided with a sample chamber 3
having a probe unit 1 moving a probe tracing a sample within the
sample chamber and a sample stage 2 mounting the sample built-in,
and a chamber in which the sample and the probe are arranged, as a
chamber in which the sample and the probe are arranged. Further,
the apparatus is provided with an electron gun portion 4 of an
electronic optical apparatus constituted by an electron source
generating an electron, various apertures, a condenser lens for
focusing the electron, a deflecting coil, an objective lens, an ion
pump making each of the portions high vacuum, a secondary electron
detector and the like, and a probe replacing chamber 5 capable of
replacing the probe without breaking the vacuum of the sample
chamber 3. Further, the apparatus is provided with a sample
replacing chamber 6 capable of replacing the sample without
breaking the vacuum and an exhaust apparatus achieving a vacuum
exhaust, as an exhaust mechanism capable of exhausting the inner
portion of the probe supply chamber. Further, the apparatus is
structured by a control display portion 7 constituted by a control
apparatus, an image display portion, an image display control
portion and a control display apparatus. A probe supply chamber 8
structured such that a vacuum exhaust can be achieved via a gate
valve and provided with a door portion to the chamber is added to
the sample replacing chamber 6.
[0025] FIG. 2 is a schematic view of a structure of the probe
storage container accommodating the probe used for the prober
apparatus, in accordance with the first embodiment, and FIG. 3 is a
cross sectional view of the probe storage container in accordance
with the first embodiment.
[0026] A probe 9 is formed by caulking and bonding a tungsten wire
having a diameter of 0.05 mm and a length of 15 mm to a copper
sleeve having a diameter of 0.5 mm and a length of 9 mm. A leading
end portion of the probe 9 is desirably made of a tungsten, a
tungsten alloy or a metal processed in a needle shape. The bonded
probe raw material is electrolytic polished by NaOH water solution,
a radius of curvature of the leading end is processed to 50 nm or
less, and a total length is set to 10 mm. The radius of curvature
of the leading end portion is checked by a scanning electron
microscope under an acceleration voltage of 5 kV and a
magnification of 30000 folds. A storage base 10 corresponding to a
probe holding portion for holding the probe at a predetermined
position in an inner portion of the probe storage container is made
of a stainless steel, and is provided with a groove 10a to which a
copper pipe portion of the probe 9 is inserted, a clearance groove
10b for the caulked portion of the copper sleeve, a groove 10c
having a sufficient margin for preventing the leading end portion
of the probe from being brought into contact with a periphery, and
a groove 10d for taking out the probe. Further, a hole 10e is
provided at a diameter 4 mm as a reference position of the storage
container 11, which forms a reference portion for positioning the
probe storage container with respect to the prober apparatus, and a
long hole 10f for determining a posture of the reference hole of
the storage container 11 is provided. It is manufactured at a
dimensional accuracy equal to or less than 0.1 mm. With respect to
the reference position, a pitch accuracy of each of the grooves of
the probe is set to be equal to or less than 0.1 mm. Further, in
order to keep the inner portion of the probe in a vacuum state, a
fluorine O-ring is used as a buffering material a 13 in an upper
lid 12 corresponding to a lid portion capable of sealing the inner
portion in which the probe is stored, and a surface coming into
contact with the O-ring is mirror finished as a structure of a
dovetail groove 14 for preventing the O-ring from coming off.
Further, the storage base 10 is provided with an intake port 15
capable of exhausting an air in the inner portion, and a valve 16
shutting off an ambient air is provided in a leading end thereof.
In other words, the probe storage container is provided with the
intake port for making the inner portion of the container in a
vacuum condition, and the valve for shutting off the inner portion
of the container from the ambient air.
[0027] After exhausting the inner portion of the storage container
11 constructed by the elements mentioned above and closing the
valve, a holding block 17 for holding a state is provided. At this
time, a vacuum meter for controlling the state of the inner portion
may be additionally provided.
[0028] Further, if a gap exists between the upper lid 12 and the
probe, a scratch is generated on a surface due to a vibration at a
time of transferring. Accordingly, it is preferable to put a
buffering material 18 in the lid side. At this time, it is
desirable that the buffering material b 18 employs a material which
is hard to generate an out gas or a material from which a gas is
sufficiently discharged by burning out.
[0029] The material of the storage container 11 may be a plastic
material in place of the metal, however, if it is not a conductive
material, an electron is charged on a surface so as not to be
measured at a time of checking the leading end shape by the
electron microscope while the storage base 10 being as it is.
Accordingly, it is desirable that the material has a resistance
against an electron beam and is constituted by a conductive
material. Further, since there is a risk that the out gas is
generated from the inner portion during the vacuum storage, it is
desirable that a mechanism for heating by a lamp heater or the like
is provided for previously burning out in the vacuum condition.
[0030] The stored number of the probe in the storage container 11
is set to six administratively. Although the stored number is not
particularly defined, a stored number having one or more larger
than the number that the prober apparatus can set the probes, for
example, the stored number of six in the case that the number of
the probes which can be set is five, taking into consideration a
recovery of the replaced probe.
[0031] After electrolytic polishing the leading end portion of the
probe, the probe is put in the storage base 10 one by one, the
upper lid 12 is set, and the storage base 10 is evacuated by the
exhaust apparatus, for example, a dry pump until the inner portion
comes to several Pascal, and is held by the holding block 17. At
this time, a holding method of the upper lid 12 may employ a
screw.
[0032] Next, a dry etching is applied for removing an oxide film
formed in the leading end portion in the manufacturing step. The
dry etching employs a milling apparatus which ionizes an argon in
the vacuum and accelerates an argon ion so as to process.
[0033] FIG. 4 shows a schematic view of the milling apparatus
additionally provided with the storage container supply
chamber.
[0034] At a time of manufacturing the probe storage container of
the prober apparatus, the oxide film at least in the leading end
portion of the probe is removed by using the ion beam apparatus
without being exposed to the atmospheric air, the probe is stored
in the probe storage container, and the lid portion of the probe
storage container is closed. Specifically, it is executed, for
example, as follows.
[0035] The storage container 11 in which the probe having the
processed leading end is put is mounted on a storage base stage 19.
A pin is additionally provided in the storage base stage 19,
whereby positions of the storage base stage 19 and the storage
container 11 are determined. Next, the storage container supply
chamber 20 is evacuated by a vacuum exhausting apparatus
constituted by a dry pump (DP), a turbo molecular pump (TMP) and
the like. A vacuum state is monitored by a vacuum meter. The
holding block 17 is detached by a block attaching and detaching
mechanism 21, and the upper lid 12 of the storage container 11 is
detached by an upper lid opening and closing mechanism 22. Next, a
gate valve 24 is opened by a supply base feeding mechanism 23, and
the storage container base 10 is set to a milling stage 25 for
processing the milling apparatus. At this time, since the storage
container base 10 is processed in a tilted state at a time of being
milled, it is desirable to provide a holding means in the milling
apparatus side. Further, a holding mechanism may be provided in the
storage container base 10 side. Further, since the milling stage 25
is provided with a stage rotating mechanism 26 of an autorotation
mechanism for executing the process while rotating on its own axis.
The argon ion is generated by an ion source 27, a gas supplying
apparatus 28 for supplying an argon gas, a neutralizer 29 for
neutralizing the argon ion and an ion source power supply 30.
[0036] The milling is executed by setting the milling stage 25 so
as to come to 45 degree with respect to the ion source. A condition
for removing the oxide film is set by using a time for which a
milling shutter 31 is open and a draw-out voltage in the ion source
as a parameter. Further, if a gold is coated in an inner side of
the groove 10c of the storage container base 10, the gold is
sputtered by the argon ion, and the gold is coated on the other
portions of the probe than the portion to which the argon ion is
irradiated, whereby it is possible to differentiate the portion
from which the oxide film is removed, from the other portions.
Accordingly, if a television camera enlarging the leading end
portion is provided, for example, in the probe take-out portion of
the probe apparatus so as to observe the leading end portion, it is
possible to check whether or not the milling process is executed,
because the other portions than the portion from which the oxide
film of the probe is removed is coated by the gold.
[0037] Further, it is possible to employ a milling method of taking
out the probe one by one from the storage base 10 so as to execute
the milling. The diameter of the leading end may be finished to the
predetermined dimension by the milling step in place of the
electrolytic process mentioned above. In this case, since the oxide
film in the leading end portion is removed in the step of finishing
to the predetermined dimension, it is preferable to prevent the
steps after the milling from being exposed to the atmospheric
air.
[0038] After the milling process, the gate valve 24 is opened, the
storage container base 10 is taken out from the milling stage 25 by
the supply base feeding mechanism 23, and the upper lid 12 of the
storage container 11 is attached by the upper lid opening and
closing mechanism 22. Next, the holding block 17 is attached by the
block attaching and detaching mechanism 13 and the vacuum condition
is held. After closing the gate vale 24, the storage container
supply chamber 20 is open to the atmospheric air, and the storage
container 11 is taken out. After taking out, the storage container
11 is put in an aluminum vacuum package, the atmospheric air in the
inner portion is evacuated so as to be in the vacuum state, and the
sealing portion is heated and sealed. At this time, it is possible
to achieve a long-term storage by putting a deoxidizer or a
moisture absorbent within the vacuum package.
[0039] FIG. 5 shows a schematic view of the prober apparatus using
the storage container 11. At a time of arranging the probe in the
prober apparatus, the probe storage container storing the probe is
held at a predetermined position within the probe supply chamber of
the prober apparatus, and the probe supply chamber is evacuated.
Further, the lid portion of the probe storage container is opened
within the probe supply chamber, and the probe in the probe storage
container is arranged in the chamber of the prober apparatus.
Describing a specific example, at a time of using the probe in the
prober apparatus provided with the scanning electron microscope,
the storage container 11 is taken out from the vacuum package, the
holding block 17 is detached, and the storage container 11 is set
to the stage of the probe supply chamber 8. The probe supply
chamber 8 is evacuated by the dry pump, the upper lid 12 is opened
by the upper lid opening and closing mechanism 22 corresponding to
the container opening and closing mechanism capable of opening and
closing the lid portion of the probe storage container, and the
probe is attached to a leading end of a probe holder 33 structured
such that a support pipe supporting the probe and an arm fixing the
support pipe are integrally formed, by a probe supplying mechanism
32 capable of arranging the probe of the probe storage container in
the chamber.
[0040] In the case of measuring an electric characteristic of a
device of a semiconductor integrated circuit by using the probe
manufactured as mentioned above, it is possible to secure a
conductivity and measure with a stable characteristic.
[0041] Further, the scanning type electron microscope provided with
the upper lid opening and closing mechanism 22 is used for checking
the radius of curvature of the leading end portion in a midstream
step. The probe storage container 11 is set in a state of detaching
the holding block 17, and is set to the vacuum state by the dry
pump, the upper lid 12 of the probe storage container 11 is
detached by the upper lid opening and closing mechanism 22, and the
storage container base 10 is transferred to a sample observing
stage 34 measuring from the sample chamber by the supply base
feeding mechanism 23. The leading end portion of the probe is
observed at a magnification of 30000 folds by a scanning electron
microscope constituted by an electronic optical system 35
discharging, accelerating and converging the electron, a secondary
electron detector 36 detecting a secondary electron output from the
measured material, an exhaust apparatus holding the vacuum state,
and the like. It is desirable to sort the leading end diameter in
correspondence to the diameter and the pitch of the measured
material at a time of being actually used, on the basis of the
result of observation of the leading end portion. Since the probe
is not exposed to the atmospheric air in the midstream step, there
is not generated such a defect that the measurement can not be
executed due to the oxide film on the surface of the probe, and it
is possible to stably measure the electric characteristic of the
device in the semiconductor integrated circuit.
[0042] In accordance with the present embodiment, since the worker
attaching the probe can execute the replacing and attaching work
without directly touching the probe, it is possible to prevent the
leading end portion of the probe from being damaged. Further, since
the probe is not exposed to the atmospheric air from the process of
removing the oxide film in the leading end of the probe to the
attachment to the prober unit of the apparatus, including the
storage, the oxide film is not formed on the surface of the probe,
and it is possible to stably measure the electric characteristic of
the semiconductor device or the like on the wafer. Accordingly,
this is considered to be a technique necessary for evaluating the
characteristic of the semiconductor device on the basis of the
micro-fabrication of the semiconductor in the future.
Second Embodiment
[0043] In order to prevent the oxidation of the tungsten probe, the
inner side of the storage container may be replaced by an inert
gas, for example, a nitrogen or the like in addition to the vacuum
state. In the present embodiment, a description will be given of a
case that the inert gas is filled within the storage container
while focusing on a different point from the first embodiment.
[0044] In the milling step of the first embodiment, after removing
the oxide film by the milling process of the leading end portion of
the probe, a dry nitrogen gas is introduced to the probe storage
container 11 in the storage container supply chamber 20 by an inert
gas supplying apparatus 37. The upper lid 12 is set by the upper
lid opening and closing mechanism 22 at a time when the atmospheric
pressure is achieved by the vacuum meter, and the holding block 17
holds the storage container 11 in such a manner as to prevent the
nitrogen gas from leaking. Next, the storage container is taken out
of the storage container supply chamber 20, and is put in the
aluminum package so as to be stored. At this time, it is possible
to store for a long term by sealing the deoxidizer or the like in
the package.
[0045] At a time of actually using, the storage container is taken
out from the aluminum package, and the storage container is set to
the table of the opening and closing apparatus of the prober
apparatus provided with the electron microscope with the opening
and closing apparatus. After the nitrogen is introduced after
exhausting the inner side of the opening and closing apparatus by
the vacuum exhausting apparatus so as to set to the vacuum state,
and the inner side of the chamber is filled with the nitrogen, the
upper lid is detached. Next, the inner side of the chamber is set
to the vacuum state by the vacuum exhausting apparatus, and the
probe is set to the holder. At this time, the opening and closing
valve may be opened after attaching the opening and closing valve
to the storage container and vacuum exhausting the inner side of
the chamber, and then the upper lid may be detached by the opening
and closing apparatus in the vacuum state.
[0046] In the case of setting the probe stored for one month in the
storage container mentioned above after the milling process to the
probe apparatus, and measuring the electric characteristic of the
semiconductor, the conductivity can be secured, and the stable
measurement can be achieved.
* * * * *