U.S. patent application number 12/944213 was filed with the patent office on 2011-03-24 for low cost die placement.
Invention is credited to Seung-Ho Baek, Roger S. Kerr, Timothy J. Tredwell.
Application Number | 20110068452 12/944213 |
Document ID | / |
Family ID | 41328979 |
Filed Date | 2011-03-24 |
United States Patent
Application |
20110068452 |
Kind Code |
A1 |
Kerr; Roger S. ; et
al. |
March 24, 2011 |
LOW COST DIE PLACEMENT
Abstract
Exemplary embodiments provide methods and systems for assembling
electronic devices, such as integrated circuit (IC) chips, using a
release member having a phase change material. Specifically, IC
elements/components can be selectively received, stored, inspected,
repaired, and/or released in a scalable manner during the assembly
of IC chips by inducing phase change of the phase change material.
The release member can be flexible or rigid. In some embodiments,
the release member can be used for a low cost placement of the IC
elements in combination with an SOI (silicon on insulator) wafer
and/or an intermediate transfer member. In other embodiments, the
release member can be used for a low cost placement of the IC
elements in combination with a release wafer.
Inventors: |
Kerr; Roger S.; (Brockport,
NY) ; Tredwell; Timothy J.; (Fairpot, NY) ;
Baek; Seung-Ho; (Pittsford, NY) |
Family ID: |
41328979 |
Appl. No.: |
12/944213 |
Filed: |
November 11, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12236972 |
Sep 24, 2008 |
7879691 |
|
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12944213 |
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Current U.S.
Class: |
257/678 ;
257/E23.002 |
Current CPC
Class: |
H01L 2924/19043
20130101; H01L 2221/68322 20130101; H01L 2924/00014 20130101; H01L
2924/01049 20130101; H01L 2924/01057 20130101; H01L 2924/01013
20130101; H01L 2924/01033 20130101; H01L 2924/01046 20130101; H01L
2924/19042 20130101; H01L 2221/68368 20130101; H01L 2924/01047
20130101; H01L 21/56 20130101; H01L 21/32055 20130101; H01L
2924/09701 20130101; H01L 2924/01032 20130101; H01L 2924/0105
20130101; H01L 2221/68372 20130101; H01L 2924/00011 20130101; H01L
2924/01005 20130101; H01L 2924/01079 20130101; H01L 2224/81201
20130101; H01L 2924/01077 20130101; H01L 2224/7565 20130101; H01L
2224/81801 20130101; H01L 2221/68354 20130101; H01L 2924/00011
20130101; H01L 2224/812 20130101; H01L 2924/01051 20130101; H01L
2924/01006 20130101; H01L 24/81 20130101; H01L 2224/81001 20130101;
H01L 2924/00014 20130101; H01L 2924/01052 20130101; H01L 2924/01075
20130101; H01L 2224/0401 20130101; H01L 2221/6835 20130101; H01L
2924/19041 20130101; H01L 2224/16 20130101; H01L 2924/14 20130101;
H01L 2924/014 20130101; H01L 2224/0401 20130101 |
Class at
Publication: |
257/678 ;
257/E23.002 |
International
Class: |
H01L 23/58 20060101
H01L023/58 |
Claims
1. An integrated circuit sub-assembly comprising: a release member
supporting one or more transferred IC elements; an activatable
thermal barrier layer formed on the release member, wherein the
activatable thermal barrier material is provided between the one or
more IC elements and the release member; and an energy source
directed at said activatable thermal barrier layer, wherein said
energy source activates said activatable thermal barrier layer and
releases each transferred IC element from the release member.
2. The integrated circuit sub-assembly of claim 1, wherein the
release member comprises an intermediate transfer member
re-orienting said one or more transferred IC elements.
3. The integrated circuit subassembly of claim 1, wherein the
release member comprises a roll-to-roll material.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of prior U.S. patent
application Ser. No. 12/236,972, filed Sep. 24, 2008, which is
hereby incorporated herein by reference in its entirety.
FIELD OF THE INVENTION
[0002] This invention relates generally to assembly of
semiconductor devices and, more particularly, to the assembly of
integrated circuit elements.
BACKGROUND OF THE INVENTION
[0003] As market demand increases for integrated circuit (IC)
products such as RFID tags, and as IC die sizes shrink, high
assembly throughput rates for very small die and low production
costs are crucial in providing commercially-viable products. For
example, the cost of an RFID device still depends on assembly
complexity.
[0004] Conventional methods for assembling IC products include pick
and place techniques. Such techniques involve a manipulator, such
as a robot arm, to remove IC dies from a wafer and place them into
a die carrier. The dies are subsequently mounted onto a substrate
with other electronic components, such as antennas, capacitors,
resistors, and inductors to form an electronic device. However,
these techniques have drawbacks and disadvantages. For example, the
pick and place techniques involve complex robotic components and
control systems that handle only one die at a time. In addition,
pick and place techniques have limited placement accuracy, and have
a minimum die size requirement.
[0005] Thus, there is a need to overcome these and other problems
of the prior art and to provide controllable methods for a scalable
and low cost assembly in receiving, storing, and releasing
electronic device elements.
SUMMARY OF THE INVENTION
[0006] In accordance with the present teachings, a method for
assembling integrated circuits is provided.
[0007] The method can include forming one or more spaced elements
on an oxide layer, the oxide layer formed on a silicon substrate;
providing a release member comprising a phase-change material;
joining the phase change material of the release member with the
one or more spaced elements; removing the silicon substrate by
etching the oxide layer; and exposing the joined phase change
material to an energy for selectively releasing the one or more
spaced elements from the release member.
[0008] In accordance with the present teachings, a method for
assembling integrated circuits is provided.
[0009] The method can include forming one or more spaced IC
elements on an oxide layer, the oxide layer formed on a silicon
substrate; coupling an intermediate transfer member onto a first
surface of the one or more spaced IC elements; removing the silicon
substrate by etching away the oxide layer and exposing a second
surface of the one or more spaced IC elements, wherein the second
surface is substantially parallel to the first surface; coupling a
phase change surface of a release member onto the exposed second
surface of the one or more spaced IC elements; removing the
intermediate transfer member from the first surface of the one or
more spaced IC elements; and exposing the coupled phase change
material to an energy for selectively releasing the one or more
spaced IC elements from the release member.
[0010] In accordance with the present teachings, a method for
assembling integrated circuits is provided.
[0011] The method can include forming a silicon layer on a phase
change material of a release member; forming a plurality of bump
bonds on the silicon layer of the release member; forming one or
more spaced dies on the phase change material by etching through
the silicon layer, wherein each spaced die comprises one or more
bump bonds formed on an etched silicon layer; and exposing the
phase change material to an energy to induce a phase change for
selectively releasing the one or more spaced dies from the release
member.
[0012] In accordance with the present teachings, a method for
controlling assembly of IC elements is provided.
[0013] The method can include coupling one or more IC elements onto
a phase change material of a release member; selectively inspecting
a group of the one or more IC elements on the phase change
material; and selectively applying an energy to a portion of the
phase change material to release an inspected IC element for
repair.
[0014] In accordance with the present teachings, an integrated
circuit sub-assembly is provided.
[0015] The sub-assembly can include a release member supporting one
or more transferred IC elements; an activatable thermal barrier
layer formed on the release member, wherein the activatable thermal
barrier material is provided between the one or more IC elements
and the release member; and an energy source directed at said
activatable thermal barrier layer, wherein said energy source
activates said activatable thermal barrier layer and releases each
transferred IC element from the release member.
[0016] Additional objects and advantages of the invention will be
set forth in part in the description which follows, and in part
will be obvious from the description, or may be learned by practice
of the invention. The objects and advantages of the invention will
be realized and attained by means of the elements and combinations
particularly pointed out in the appended claims.
[0017] It is to be understood that both the foregoing general
description and the following detailed description are exemplary
and explanatory only and are not restrictive of the invention, as
claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The accompanying drawings, which are incorporated in and
constitute a part of this specification, illustrate several
embodiments of the invention and together with the description,
serve to explain the principles of the invention.
[0019] FIG. 1 depicts an exemplary method for coupling and
releasing IC elements using a phase change material in accordance
with the present teachings.
[0020] FIGS. 2A-2C depict an exemplary embodiment for assembling IC
elements at various stages based on the method depicted in FIG. 1
in accordance with the present teachings.
[0021] FIGS. 3A-3D depict another exemplary embodiment for
assembling IC elements at various stages based on the method
depicted in FIG. 1 in accordance with the present teachings.
[0022] FIG. 4 depicts an exemplary method for assembling IC
elements using a phase change material and silicon on insulator
(SOI) wafer in accordance with the present teachings.
[0023] FIGS. 5A-5D depict an exemplary assembly process based on
the method depicted in FIG. 4 in accordance with the present
teachings.
[0024] FIG. 6 depicts another exemplary method for assembling IC
elements using a phase change material, an SOI wafer and an
intermediate transfer member in accordance with the present
teachings.
[0025] FIGS. 7A-7E depict an exemplary assembly process based on
the method depicted in FIG. 6 in accordance with the present
teachings.
DETAILED DESCRIPTION OF THE INVENTION
[0026] Reference will now be made in detail to the exemplary
embodiments of the invention, examples of which are illustrated in
the accompanying drawings. Wherever possible, the same reference
numbers will be used throughout the drawings to refer to the same
or like parts. In the following description, reference is made to
the accompanying drawings that form a part thereof, and in which is
shown by way of illustration specific exemplary embodiments in
which the invention may be practiced. These embodiments are
described in sufficient detail to enable those skilled in the art
to practice the invention and it is to be understood that other
embodiments may be utilized and that changes may be made without
departing from the scope of the invention. The following
description is, therefore, merely exemplary.
[0027] While the invention has been illustrated with respect to one
or more implementations, alterations and/or modifications can be
made to the illustrated examples without departing from the spirit
and scope of the appended claims. In addition, while a particular
feature of the invention may have been disclosed with respect to
only one of several implementations, such feature may be combined
with one or more other features of the other implementations as may
be desired and advantageous for any given or particular function.
Furthermore, to the extent that the terms "including", "includes",
"having", "has", "with", or variants thereof are used in either the
detailed description and the claims, such terms are intended to be
inclusive in a manner similar to the term "comprising."The term "at
least one of" is used to mean one or more of the listed items can
be selected.
[0028] Notwithstanding that the numerical ranges and parameters
setting forth the broad scope of the invention are approximations,
the numerical values set forth in the specific examples are
reported as precisely as possible. Any numerical value, however,
inherently contains certain errors necessarily resulting from the
standard deviation found in their respective testing measurements.
Moreover, all ranges disclosed herein are to be understood to
encompass any and all sub-ranges subsumed therein. For example, a
range of "less than 10" can include any and all sub-ranges between
(and including) the minimum value of zero and the maximum value of
10, that is, any and all sub-ranges having a minimum value of equal
to or greater than zero and a maximum value of equal to or less
than 10, e.g., 1 to 5. In certain cases, the numerical values as
stated for the parameter can take on negative values. In this case,
the example value of range stated as "less that 10" can assume
negative values, e.g. -1, -2, -3, -10, -20, -30, etc.
[0029] Exemplary embodiments provide methods and systems for
assembling electronic devices, such as integrated circuit (IC)
chips. For example, IC elements/components can be selectively and
scalably received, stored, inspected, repaired and released during
the assembly of IC chips. As disclosed herein, exemplary IC
elements can include, but are not limited to, display elements,
detector elements, processor elements, or any other IC elements as
would be understood by one of ordinary skill in the art.
[0030] For ease of illustration, the invention will be described
with reference to an assembly of IC chips in an exemplary form of
radio frequency identification (RFID) chips. RFID chips can be used
in various applications, such as inventory control, airport baggage
monitoring, as well as security and surveillance applications for
location monitoring and real time tracking of such items.
Generally, an RFID chip can include, e.g., a plurality of die
elements (dies) mounted onto related electronics that can be
located on a chip substrate. The plurality of dies can be an
integrated circuit that performs RFID operations known to one of
ordinary skill in the art, such as communicating with one or more
chip readers according to various interrogation protocols of
RFID.
[0031] As disclosed herein, the assembly of the exemplary RFID
chips can include a low cost die placement by using a release
member that has a phase-change surface. For example, in some
embodiments, the die placement can include a combined use of one or
more of the release member, an SOI (silicon on insulator) wafer,
and an intermediate transfer member. In other embodiments, the die
placement can include a combined use of the release member and a
die release wafer. Even further, it will be appreciated the
placement of die on a surface can be such that the die are
magnetically aligned prior to subsequent processing. An example of
the magnetic alignment of the die is disclosed in, for example
commonly owned published application number 2006-0131504, and
incorporated herein by reference in its entirety.
[0032] As used herein and unless otherwise specified, the term
"release member" refers to a layered structure that includes a
phase-change material formed over a release support. The term
"release member" can be used to receive dies (i.e., attach dies)
and, whenever desired, to release (i.e., detach) the received dies
to a subsequent surface. The "release member" can be flexible or
rigid and can be in a form of, for example, a web, a film, a plate,
a roll, or their various combinations.
[0033] As used herein, the term "flexible" refers to the ability of
a material, structure, device or device component to be deformed
into a curved shape without undergoing a transformation that
introduces significant strain, such as strain characterizing the
failure point of a material, structure, device, or device
component. The release member can therefore include, but is not
limited to, a flexible web, flexible film, flexible plate, flexible
sheet, flexible roll, and their various combinations. The
flexibility of the disclosed release member can allow the attached
IC elements to be wrapped, for example, around a mandrel and to
render curved surfaces for a further storage or a roll-to-roll
process. Likewise, the release support of the release member can be
flexible or rigid and can be formed with various shapes for the
release member. The release support can be formed of a material
including, but not limited to, glass, plastic, stainless steel,
fabric, paper, a fibrous material, a tape material (as known in the
art) or their various combinations. In various embodiments, the
release support can be a light weight release support.
[0034] The release member can include phase-change materials. As
used herein, the term "phase change materials" refers to materials
that can be switched between "phases", for example, between
generally amorphous and generally crystalline states. These
materials can absorb energies such as optical, electrical, thermal,
radiative or other energy that can induce and switch the material
between its different states. The "phase-change materials" can be
used as a functional interface between dissimilar materials, for
example, between the release member and any IC elements.
Specifically, when IC elements contact a phase-change material, the
phase-change material can be adhesive to allow IC elements to be
held in place, and can later allow the IC elements to be released
from the release member using various energy sources, for example,
optical beams from sources, such as UV, or IR lasers. When
releasing, the IC elements can be transferred onto a subsequent
surface and the phase-change material can be removed from the
release support. Such release support (e.g., glass) can often be
reused, for example, by forming (e.g., depositing) a "new" layer of
phase-change material thereon to form a "new" release member.
Therefore, the phase-change material can provide reworkability,
ease of handling, and not require a cure in a high volume setting
for IC elements.
[0035] In various embodiments, the phase change material can be
designed according to the type and power of the energy sources that
can be used to induce the phase change. For example, one or more
metal elements can be included in the phase change material, such
as, for example, tin, palladium, aluminum, silicon, germanium,
tellurium, antimony, indium, silver, tellurium, antimony, gallium,
lanthanide, and chalcogenide. The phase change material can
therefore include various metals, metal alloys and/or metal
compounds of a combination to trip at a predetermined temperature
to conduct the phase change. Tolerances of .+-.1-2.degree. C. can
be obtained. For example, metal compounds can include compounds of
Ga, La, and S (GLS), as well as related compounds in which there is
substitution of S with 0, Se and/or Te.
[0036] By using the phase-change material, the release member can
be used to receive IC elements, and to further release IC elements
to any desired subsequent receiving surface (e.g., an intermediate
transfer type surface or a final chip surface). In addition, the
release member can be used to store the received IC elements in
various flexible or rigid forms. For example, the release member
can be used for a display including, but not limited to, TV screen,
radiographic detector, and/or sensor array. Such display can be
flat or arcuate, and can be used, e.g., to emit, detect and/or
collect energy.
[0037] FIG. 1, FIGS. 2A-2C, and FIGS. 3A-3C depict various
embodiments for transferring IC elements using a release member
having a phase change surface in accordance with the present
teachings. Specifically, FIG. 1 depicts an exemplary method 100 for
coupling and releasing IC elements using the release member, while
FIGS. 2A-2C and FIGS. 3A-3C depict various exemplary embodiments
for assembling IC elements at various stages based on the method
100 depicted in FIG. 1. Although the method 100 will be described
in reference to FIGS. 2A-2C and/or FIGS. 3A-3C for illustrative
purposes, the process of method 100 is not limited to the
structures shown in FIGS. 2A-2C and FIGS. 3A-3C.
[0038] The method 100 begins at 110 in FIG. 1. At 120, IC elements
can be coupled with a release member through a phase change
material formed on a release support. For example, a plurality of
RFID dies can be coupled with the release member at the surface of
the phase change material. In various embodiments, the phase change
material can be patterned on the release support of the release
member. Each patterned phase change material can be selectively
used to couple one of the plurality of RFID dies.
[0039] Each exemplary RFID die can further include a plurality of
contacts to provide an electrical connection of the RFID die with
the related electronics for the RFID chips. The plurality of
contacts can include, for example, conductive traces, such as
conductive ink traces, or conductive bumps or bumps attached to a
strap. In various embodiments, the exemplary conductive bumps can
be formed on a die support, such as silicon. The conductive bumps
can further be built up, if required by the assembly process, by
the deposition of additional materials, such as gold and solder
flux. Such "bumping" processes are known to one of ordinary skill
in the relevant arts.
[0040] The plurality of dies (e.g., wherein each die includes a
plurality bumps) can therefore be mounted in either a "bump side
up" or "bump side down" orientation. As used herein the terms "bump
side up" and "bump side down" denote alternative implementations of
the plurality of dies. In particular, these terms designate the
orientation of connection bumps in relation to a subsequent
surface, such as a chip substrate. That is, in a "bump side up"
orientation, the plurality of dies can be transferred to the
subsequent surface with bumps facing away from the subsequent
surface. In a "bump side down" orientation, the plurality of dies
can be transferred to the subsequent surface with bumps facing
towards, and in contact with the subsequent surface.
[0041] In various embodiments, the subsequent surface can be an
intermediate transfer surface, or an actual final chip substrate to
which the dies can be permanently attached. If the subsequent
surface is not a final surface, the plurality of dies can be
transferred to an intermediate surface, such as the surface of an
intermediate transfer member as disclosed herein. In various
embodiments, the subsequent surface can be rigid or flexible and
can be formed from various materials chosen from, for example,
plastic, fibrous material, glass, silicon wafer, etc., for either
the intermediate surface or final chip substrate.
[0042] For example, in FIG. 2A, device 200A can allow for a "bump
side up" release. As shown, the device 200A can include a plurality
of dies 250 formed on a release member 202 that can include a
phase-change material 206 formed on a release support 204. Each die
250 can include a plurality of bumps 255a-d.
[0043] In another example, as shown in FIG. 3A, device 300A can
allow for a "bump side down" release. As shown, the device 300A can
include a plurality of dies 350 formed on a release member 302,
wherein each die 350 can include a plurality of bumps 355a-d, and
the release member 302 can include a phase-change material 306
formed on a release support 304.
[0044] Note that the plurality of bumps 255a-d in device 200A and
the plurality of bumps 355a-d in device 300A are shown in a cross
section view, wherein contact bumps 255a-d and/or 355a-d can be
arranged in a rectangular shape that allows for flexibility in die
placement, and good mechanical adherence between surfaces. In
various embodiments, any number of contact bumps can be formed for
devices 200A and 300A, depending on a particular application. In
addition, contact bumps 255a-d and/or 355a-d can be laid out in
other shapes in accordance with the present teachings.
[0045] Referring back to FIG. 1, at 130, the release member that is
coupled with IC elements can be exposed to an energy source to
induce a phase change of the phase-change material, and thus to
release the IC elements from the release member leaving the release
support to be, for example, reused. And the method 100 concludes at
140.
[0046] In the first exemplary embodiment of the method 100, as
shown in FIG. 2A, in order to release the plurality of dies 250,
the device 200A can be flipped upside down to have the bumps 255
face "up" with respect to the die 250 as shown in FIG. 2B. The
device 200B can then be placed close to a subsequent surface 290
and/or in contact with the subsequent surface 290 as shown in FIG.
2C.
[0047] In the second exemplary embodiment of the method 100, as
shown in FIG. 3A, in order to release the plurality of dies 350 in
FIG. 3A, the device 300A can be flipped upside down to have the
bumps 355 face "down" with respect to the die 350 as shown in FIG.
3B. The device 300B can then be placed close to and/or in contact
with a subsequent surface 390 as shown in FIG. 3C.
[0048] The device 200B (see FIG. 2B) and the device 300B (see FIG.
3B) can then be exposed to an energy to induce a phase change of
the phase-change material (e.g., 206 or 306) of the release member
(e.g., 202 or 302). Because of the induced phase change, the
plurality of dies can be released from the release member (202 or
302) (e.g., onto a prepared subsequent surface 290 or 390). In
various embodiments, the energy source can be, for example, an
optical source such as a laser beam of UV or IR. In the case when
an optical energy is used, the release member (e.g., 202 or 302),
including the release support (e.g., 204 or 304) can be at least
partially transparent in order to transmit the optical signal onto
the phase change material (e.g., 206 or 306).
[0049] Specifically, in FIG. 2C, the device 200C can be exposed to,
e.g., an IR laser beam 270. When the IR laser beam 270 hits the
phase-change material 206 of the release member 202, the
phase-change material 206 can absorb this laser energy by design
and induce a phase change between its different states to release
each of the plurality of dies 250 from the device 200B (i.e., from
the release support 204) to the subsequent surface 290. Similarly,
in FIG. 3C, the device 300C can be exposed to, e.g., an IR laser
beam 370. When the IR laser beam 370 hits the phase-change material
306 of the release member 302, the phase-change material 306 can
absorb this laser energy by design and induce a phase change
between its different states to release each of the plurality of
dies 350 from the device 300B (i.e., from the release support 304)
to the subsequent surface 390.
[0050] The subsequent surface 290 or 390 can include an adhesive
substance (not shown) formed on a substrate of the subsequent
surface. The adhesive substance can be known to one of ordinary
skill in the art and can be sufficient to hold the released
elements in place on the subsequent surface and can also be easily
transported carrying the attached IC elements. The subsequent
surface can be an intermediate substrate and/or a final chip
substrate.
[0051] In various embodiments, prior to releasing, the subsequent
surface 290 or 390 can be placed in contact with the die elements
and be pressed against the die elements that reside on the release
member (e.g., 202 in FIG. 2C or 302 in FIG. 3C) causing the
elements to attach to the adhesively coated subsequent surface.
When exposed to releasing energy, the phase change material (e.g.,
206 or 306) can undergo a phase change to release the die elements
and can be removed, leaving the dies 250 or 350 attached to the
subsequent surface (e.g. 290 or 390). In various embodiments, a
conductive metal coating having, for example, a plastic or
dielectric overlay can be formed on the subsequent surface, the
metal coating electrically connecting with the bump bonds 355.
[0052] In addition to that disclosed in connection with FIGS.
3A-3C, the exemplary embodiment 300D depicted in FIG. 3D, indicates
that one or more released IC elements 350 can be transferred onto
an exemplary antenna substrate 318 or otherwise metal coated
substrate 318.
[0053] The released (i.e., detached) one or more dies 350, e.g.,
350B and 350C shown in FIG. 3D, transferred onto the antenna
substrate 318 can have an electrically conductive contact with a
plurality of antennas 315 through a plurality of bump bonds 355 of
each transferred die 350B or 350C.
[0054] In various embodiments, a conductive adhesive or an
activatable thermal barrier layer can be disposed between the
antenna 315 of the chip substrate 310 and the bump bonds 355 of
each die 350B or 350C.
[0055] As shown in FIG. 3D, the transferred dies can be bonded with
the antenna substrate 318 by using various application rollers
360A/B to form bonded dies (e.g., 350B or 350C) on the antenna
substrate 318.
[0056] In one embodiment, at least one pressure roller such as 360A
can be used to apply pressure to each transferred die 350 to
provide a compressive pressure for bonding the bump bonds 355 of
the die 350 with the underlying antenna substrate 318. In various
embodiments, more pressure rollers can be used. For example, a
second pressure roller, feed, or idler roller 360B can oppose the
roller 360A and be positioned on an opposite side of the chip
substrate 310 to assist in bonding each die (e.g., 350B/C) with the
antenna substrate 318.
[0057] In another embodiment, at least one heating roller 360A can
be used to roll over each transferred die 350 to provide a thermal
energy for bonding each transferred die with the underlying antenna
substrate 318. In various embodiments, more heating rollers can be
used. For example, a second heating roller, feed, or idler roller
360B can oppose the roller 360A and be positioned on an opposite
side of the chip substrate 310 to assist in bonding each die (e.g.,
350 B/C) with the antenna substrate 318.
[0058] In an additional embodiment, each transferred die 350 can be
bonded with the underlying antenna substrate 318 by applying both a
compressive pressure and thermal energy using one or more of an
exemplary roller 360A and an exemplary roller 360B. In addition,
the compressive pressure and the heat can be applied by, for
example, one or more pressure rollers and one or more heating
rollers. In the event of multiple rollers formed in series,
pressure and heat can then be applied either sequentially or
simultaneously according to a positioning of rollers.
[0059] Subsequently, the bonded IC elements on the antenna
substrate can be encapsulated in place using an encapsulating
material, which can be a curable material including, but not
limited to, polyurethane, polyethylene, polypropylene, polystyrene,
polyester, and epoxy, and combinations thereof. The encapsulating
material can be generally deposited over electronic components
(e.g., dies 350B or 350C in FIG. 3D) mounted on a chip substrate
(e.g., the antenna substrate 318) using, for example, a
syringe-type dispenser moved over the chip substrate. For example,
dams (e.g., 375 in FIG. 3D) of high viscosity encapsulating
material 380 can be first deposited around areas where components
are bonded and then the areas within the dams can be cured by, for
example, applying pressure, heat or radiation depending on the
chosen encapsulating material. As still shown in FIG. 3D, the
exemplary bonded die 350C can be locked in place on the antenna
substrate 318 within the cured encapsulating material 375.
[0060] In various embodiments, the acts of releasing, transferring,
bonding, and encapsulating of the one or more IC elements
illustrated in FIG. 3D can be performed simultaneously in a
successive manner using, for example, a flexible sheet to sheet
process or flexible roll to roll process. In this manner, a large
amount of dies can be released, transferred, bonded and
encapsulated selectively, successively, and simultaneously.
[0061] It is noted that the method 100 and the processes 200 and
300 can be implemented on any portion of, or all of the dies on the
release member. For example, the method and processes can be
accomplished in one or more iterations, using one or more strips of
an adhesive coated on the subsequent substrate that each adhere to
and carry away a group of dies from the release member.
Alternatively, a sheet sized adhesive coated subsequent surface can
be used to adhere to and carry away multiple groups or any size
array of the dies from the release member.
[0062] In this manner, as described in FIGS. 1-3, the disclosed
release member can provide a "controllable" technique for
selectively receiving, storing, screening (inspecting), repairing,
and/or releasing IC elements. First, the release member can provide
a scalable high volume assembly of IC elements. For example, when
glass is used for the release member, a glass release member can be
formed having dimensions on an order of meters (e.g., about
2.times.2 square meters) or larger, while a traditional silicon
wafer generally has a maximum diameter of, for example, about 8
inches. Second, the release member can have various flexible (e.g.,
curved) shapes and provide conformability for storing or further
usage. Third, by using the release member, the assembly process of
IC elements can be controlled. That is, a selective inspection
and/or a selective repair can be performed prior to releasing of
the IC elements from the release member. For example, a group of
the IC elements on the phase change material can be selectively
inspected using a test circuit based on specific applications. An
inspected IC element that needs to be repaired can then be
determined and selectively released from the release member by
applying energy to a selected portion of the phase change material,
to which the determined IC element is coupled. Fourth, when
releasing, by using the phase change material, one or more selected
IC elements or multiple IC elements can be released at a time. In
addition, the disclosed releasing process of the IC elements can be
performed continuously for all of the IC elements at a time or
flexibly for a portion of the IC elements at a time. Finally, the
geometry and distribution of the released IC elements can be
selectively changed when transferring to the subsequent surface
after releasing.
[0063] In various embodiments, the method 100 can be used to
transfer IC elements between any two surfaces during the IC
processes by using the phase change material on various surfaces.
The transfer between any two surfaces can include, for example,
transferring IC elements from a release member to an intermediate
surface, transferring IC elements between multiple intermediate
surfaces, transferring IC elements between an intermediate surface
and the final substrate surface, and transferring IC elements from
the release member to the final substrate surface.
[0064] In addition, the method 100 can be applicable and employed
for a desired bump side up release or bump side down release
according to a particular application. In various embodiments, the
release member of the method 100 can be used in combination with an
intermediate transfer member, an SOI wafer, and/or a release wafer
for a desired release.
[0065] FIG. 4 and FIGS. 5A-5D, FIG. 6, and FIGS. 7A-7E depict
various embodiments for releasing IC elements using the release
member in accordance with the present teachings. For example, FIG.
4 and FIGS. 5A-5D, as well as FIG. 6 and FIGS. 7A-7E show methods
and processes for releasing IC elements using an SOI wafer and/or
intermediate transfer member in accordance with the present
teachings.
[0066] Specifically, FIG. 4 depicts an exemplary method 400 for
receiving and releasing IC elements using an SOI wafer and a
release member, while FIGS. 5A-5D depict an exemplary process based
on the method 400 in FIG. 4 in accordance with the present
teachings. Although the method 400 will be described in reference
to FIGS. 5A-5D for illustrative purposes, the process of method 400
is not limited to the structures shown in FIGS. 5A-5D. Beginning at
410 of the method 400, at 420, multiple spaced IC elements can be
produced on an oxide insulator layer that is disposed on a silicon
substrate. In various embodiments, an SOI wafer can be used to form
the multiple separated die elements.
[0067] For example, as shown in FIG. 5A, the device 500A can
include a silicon substrate 510 having an overlying oxide insulator
520 and a thin silicon semiconductor layer 530 formed above the
oxide layer 520. The upper thin silicon layer 530 can have a
thickness of about 5 microns or less by, for example,
removing/etching a portion of silicon from an upper silicon layer
of an SOI wafer as is recognized in the art.
[0068] IC elements can then be formed from the thin silicon layer
530 of the device 500A. For example, a plurality of bumps 555 can
be formed on the thin silicon layer 530 to form a plurality of dies
550. The plurality of dies 550 can be further separated from one
another on the oxide layer 520 (see device 500B of FIG. 5B). The
separation between the dies 550 can be performed by suitable
patterning and etching processes known to one of ordinary skill in
the art to remove portions of silicon (that are located between any
two adjacent dies 550) through the thin silicon layer 530.
[0069] At 430 in FIG. 4, a release member can then be coupled with
the multiple separated IC elements (e.g., dies) by laminating the
phase change material of the release member onto the surface
(defined as "first surface") of the exemplary multiple die
elements.
[0070] As shown in FIG. 5C, a release member 502 can be positioned
in contact with a first surface of the device 500B that has a
plurality of dies 550. For example, the phase-change material 506
of the release member 502 can contact the plurality of dies 550 and
hold the plurality of dies 550 in place as shown in FIG. 5C.
[0071] At 440, the silicon substrate can then be removed by etching
away the oxide insulator layer that is disposed between the
multiple separated IC elements and the silicon substrate.
[0072] For example, as in FIGS. 5C-5D, the silicon substrate 510
can be removed by etching away the oxide layer 520 using suitable
etching techniques known to one of ordinary skill in the art and
exposing a second surface of the plurality of dies 550.
Consequently, the device 500D can include the release member 502
attached on the first surface of the plurality of dies 550, which
dies can be subsequently released, for example, onto an
intermediate or final substrate, in a bump side up manner.
[0073] At 450 of FIG. 4, the device (e.g., 500D), having a similar
structure as that shown in FIG. 2B, can be processed by using the
method 100 as described in FIG. 1 and/or FIGS. 2B-2C. For example,
the device 500D can be exposed to an energy beam 570 to induce the
phase change of the phase change material 506 and further to
release the plurality of dies 550 from the release member 502. As
similarly described in FIGS. 2-3, the released plurality of dies
550 can be transferred onto a subsequent surface for further
processes depending on various specific applications. The method
400 concludes at 460 for further processes as known in the art.
[0074] FIG. 6 depicts another exemplary method 600 for receiving
and releasing IC elements using an SOI wafer and an intermediate
transfer member in accordance with the present teachings. For
illustrative purposes, the method 600 will be described in
reference to FIGS. 7A-7E, although the method 600 is not limited to
the structures shown in FIGS. 7A-7E.
[0075] The method 600 begins at 610. At 620, one or more spaced IC
elements can be formed on an oxide layer that is formed on a
silicon substrate. In various embodiments, the one or more spaced
IC elements can be formed from the upper silicon layer of an SOI
wafer as is known to one of ordinary skill in the art.
[0076] For example, as shown in FIG. 7A, a plurality of separated
die elements 750 can be formed on an oxide layer 720 on a silicon
substrate 710. Each die element 750 can include a plurality of
bumps 755 formed on a portion of a thin silicon layer 730. Each
portion of the thin silicon layer 730 can be formed by etching
through an upper silicon layer that is formed on an oxide layer 720
on a silicon substrate 710, for example, of an SOI wafer. The thin
silicon layer 730 can have a thickness of, for example, about 5
microns.
[0077] At 630 in FIG. 6, an intermediate transfer member can be
attached to the (first) surface of the one or more IC elements that
is formed on the oxide layer of the exemplary SOI wafer.
[0078] As shown in FIG. 7B, an intermediate transfer member 780 can
be positioned to couple with a first surface of the device 700A
(see FIG. 7A) that has a plurality of dies 750 attached thereto.
The intermediate transfer member 780 can be rigid or flexible to
receive, release and/or transfer the plurality of dies 750. The
intermediate transfer member 780 can include an adhesive surface
786 formed on a transfer support 784. In various embodiments, the
transfer support 784 can be similar to the release support (e.g.,
204 in FIG. 2, 304 in FIG. 3, or 504 in FIG. 5) used for the
disclosed release member (e.g., 202 in FIG. 2, 302 in FIG. 3, or
502 in FIG. 5). In other embodiments, the transfer support 784 can
use different materials from the release support of the release
member. In yet other embodiments, the transfer support 784 can be
flexible. The adhesive surface 786 can include one or more adhesive
materials, such as, for example, an epoxy, glue, or wax applied
thereto, to provide surface adhesiveness. In various embodiments,
the intermediate transfer member 780 can be, for example, a green
tape or a blue tape as known in the industry. In one embodiment
when coupling, the intermediate transfer member 780 can be pressed
against the plurality of separated dies 750 causing the dies 750 to
attach thereto. The intermediate transfer member 780 can be moved
away with the attached dies 750.
[0079] At 640, the silicon substrate can be removed by etching away
the overlaying oxide layer and exposing a second surface of the one
or more spaced IC elements.
[0080] For example, as shown in FIG. 7B, the silicon substrate 710
can be removed by etching away the oxide layer 720 using suitable
etching techniques known to one of ordinary skill in the art. This
removal of the silicon substrate 710 and the oxide layer 720 can
expose a second surface that is substantially parallel to the first
surface of the plurality of dies 750 (see device 700C in FIG. 7C).
Consequently, the device 700C can include an intermediate transfer
member 780 attached to the first surface of the plurality of dies
750.
[0081] At 650, a release member having a phase change material
formed on a release support can be provided. The phase change
material can then be attached to the exposed second surface of the
plurality of dies 750.
[0082] As shown in FIG. 7D, a release member 702 can be attached
onto the second surface of the plurality of dies 750 (see device
700C), wherein the second surface of the plurality of dies 750
joins and adheres with the phase-change material 706, and
subsequently can be released via an energy exposure as shown at
770.
[0083] At 660, the intermediate transfer member can be removed
leaving the one or more IC elements attached to the release
member.
[0084] As shown in FIG. 7E, the intermediate transfer member 780
can be removed from the first surface of the plurality of dies 750
and the bump bonds 755 of each die 750 can be exposed (see FIG.
7E). As shown, the device 700E can be similar to the device 300A of
FIG. 3A.
[0085] At 670, the one or more IC elements can then be released
from the release member by applying an energy source to the
phase-change material disposed between the one or more IC elements
and the release support of the release member.
[0086] For example, as similarly described in FIG. 1 and FIGS.
3B-3C, the device 700E can be flipped upside-down for a further
releasing process, which can be, for example, a bump side down
release. In an exemplary embodiment, the flipped device 700E can be
exposed to an energy beam 770 to induce the phase change of the
phase change material 706 and further to release the plurality of
dies 750 from the release member 702. The released plurality of
dies 750 can then be transferred onto a subsequent surface for
further processes depending on various specific applications as
described in FIG. 1.
[0087] The method 600 concludes at 680. In various embodiments, the
method and process in FIG. 6 and FIGS. 7B-7E can be repeated as
desired to receive, release and transfer IC elements. For example,
the plurality of dies 750 can be transferred to any two surfaces
for either a bump side up or a bump side down orientation by using
one or more intermediate transfer members 780 and at least one
release member 702.
[0088] Other embodiments of the invention will be apparent to those
skilled in the art from consideration of the specification and
practice of the invention disclosed herein. It is intended that the
specification and examples be considered as exemplary only, with a
true scope and spirit of the invention being indicated by the
following claims.
* * * * *