U.S. patent application number 12/862331 was filed with the patent office on 2011-03-10 for method of manufacturing printed wiring board.
This patent application is currently assigned to IBIDEN, CO., LTD.. Invention is credited to Satoru KAWAI.
Application Number | 20110056838 12/862331 |
Document ID | / |
Family ID | 43646852 |
Filed Date | 2011-03-10 |
United States Patent
Application |
20110056838 |
Kind Code |
A1 |
KAWAI; Satoru |
March 10, 2011 |
METHOD OF MANUFACTURING PRINTED WIRING BOARD
Abstract
A printed wiring board is manufactured by a method in which an
opening is formed in a substrate, and a seed layer for electrolytic
plating is formed on an inner wall of the opening and a surface of
the substrate. The substrate with the seed layer is placed in an
electrolytic plating solution, and an insulative body is placed in
the electrolytic plating solution. The substrate and the insulative
body are moved relative to each other to form an electrolytic
plated film on the substrate and fill the opening with the
electrolytic plated film. A conductive circuit is formed on the
substrate. The electrolytic plating solution includes copper
sulfate, sulfuric acid, and iron ions.
Inventors: |
KAWAI; Satoru; (Ogaki-shi,
JP) |
Assignee: |
IBIDEN, CO., LTD.
Ogaki-shi
JP
|
Family ID: |
43646852 |
Appl. No.: |
12/862331 |
Filed: |
August 24, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61239995 |
Sep 4, 2009 |
|
|
|
Current U.S.
Class: |
205/125 |
Current CPC
Class: |
H05K 3/4644 20130101;
C25D 7/123 20130101; C25D 5/22 20130101; C25D 5/02 20130101; H05K
3/427 20130101; C25D 3/38 20130101 |
Class at
Publication: |
205/125 |
International
Class: |
C25D 5/02 20060101
C25D005/02; C25D 3/20 20060101 C25D003/20 |
Claims
1. A method for manufacturing a printed wiring board, comprising:
forming an opening in a substrate; forming a seed layer for
electrolytic plating on an inner wall of the opening and a surface
of the substrate; placing the substrate with the seed layer in an
electrolytic plating solution; placing an insulative body in the
electrolytic plating solution; moving the substrate and the
insulative body relative to each other to form an electrolytic
plated film on the substrate and fill the opening with the
electrolytic plated film; and forming a conductive circuit on the
substrate, wherein the electrolytic plating solution includes
copper sulfate, sulfuric acid, and iron ions.
2. The method according to claim 1, wherein a source of the iron
ions is iron(II) sulfate.
3. The method according to claim 1, wherein the iron ions include
iron(II) ions and iron(III) ions, and a ratio of the iron(II) ions
to the iron(III) ions in the electrolytic plating solution is from
1:2 to 1:4.
4. The method according to claim 2, wherein the iron sulfate is
FeSO.sub.4.7H.sub.2O included at a concentration of 5-100 g/L.
5. The method according to claim 1, wherein the insulative body
comprises a material selected from the group consisting of long
fiber, a porous resin, a fibrous resin, and rubber.
6. The method according to claim 1, wherein the insulative body
comprises porous ceramic or a porous resin.
7. The method according to claim 1, wherein the insulative body
comprises a brush having bristles comprising a resin.
8. The method according to claim 1, wherein the insulative body
comprises resin fiber.
9. The method according to claim 1, wherein the iron ions are
included at a concentration of 1 g/L-20 g/L.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This patent application claims the benefit of priority to
U.S. Provisional Patent Application No. 61/239,995, filed Sep. 4,
2009, the contents of which are incorporated by reference in their
entirety.
BACKGROUND OF THE INVENTION
[0002] In connection with methods for manufacturing a printed
wiring board, International Publication WO 2006/033315A1 discloses
a method for filling penetrating holes and non-penetrating holes
with an electrolytic plated film while an insulative body is in
contact with the surface to be plated.
BRIEF SUMMARY OF THE INVENTION
[0003] In a method for manufacturing a printed wiring board
according to one embodiment of the present invention, an opening is
formed in a substrate, and a seed layer for electrolytic plating is
formed on an inner wall of the opening and a surface of the
substrate. The substrate with the seed layer is placed in an
electrolytic plating solution, and an insulative body is placed in
the electrolytic plating solution. The substrate and the insulative
body are moved relative to each other to form an electrolytic
plated film on the substrate and fill the opening with the
electrolytic plated film. A conductive circuit is formed on the
substrate. The electrolytic plating solution includes copper
sulfate, sulfuric acid, and iron ions.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S)
[0004] A more complete appreciation of the invention and many of
the attendant advantages thereof will be readily obtained as the
same becomes better understood by reference to the following
detailed description when considered in connection with the
accompanying drawings, wherein:
[0005] FIGS. 1A-1E are cross-sectional views showing the steps of a
method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0006] FIGS. 2A-2E are cross-sectional views showing the steps of a
method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0007] FIGS. 3A-3D are cross-sectional views showing the steps of a
method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0008] FIGS. 4A-4C are cross-sectional views showing the steps of a
method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0009] FIGS. 5A and 5B are cross-sectional views showing the steps
of a method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0010] FIG. 6 is a cross-sectional view of a multilayer printed
wiring board produced by a manufacturing method according to one
embodiment of the invention.
[0011] FIGS. 7A-7D are cross-sectional views showing the steps of a
method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0012] FIGS. 8A-8F are cross-sectional views showing the steps of a
method for manufacturing a printed wiring board according to one
embodiment of the invention.
[0013] FIG. 9 is a perspective view schematically showing the
structure of a plating apparatus used in a method for manufacturing
a printed wiring board according to one embodiment of the
invention.
[0014] FIG. 10 is a schematic illustration showing the structure of
a conveyor mechanism in a plating tank of a plating apparatus used
in a method for manufacturing a printed wiring board according to
one embodiment of the invention.
[0015] FIG. 11 is a schematic illustration showing the structure of
a conveyor mechanism in a plating tank of a plating apparatus used
in a method for manufacturing a printed wiring board according to
one embodiment of the invention.
[0016] FIGS. 12A-12E are cross-sectional views showing the steps of
a method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
[0017] FIGS. 13A-13F are cross-sectional views showing the steps of
a method for manufacturing a multilayer printed wiring board
according to one embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0018] The embodiments will now be described with reference to the
accompanying drawings, wherein like reference numerals designate
corresponding or identical elements throughout the various
drawings.
First Embodiment
[0019] A plating apparatus used in a method for manufacturing a
printed wiring board according to First Embodiment of the present
invention is described with reference to FIG. 9. A plating
apparatus 10 includes a plating tank 14, a circulation device 16,
insulative bodies (20A, 20B), elevator bars 22, and an elevator
device 24. The plating tank 14 is filled with a plating solution
12. The circulation device 16 circulates the plating solution 12.
The insulative body (20A) is comprised of a porous material such as
a porous resin (e.g., sponge). For plating surfaces of a printed
wiring board 30, the insulative body (20A) is placed in the plating
solution 12 and brought into contact with one of the surfaces to be
plated, e.g., a front surface of the printed wiring board 30. The
insulative body (20B) is comprised of a porous material such as a
porous resin (e.g., sponge). For plating the surface of a printed
wiring board 30, the insulative body (20B) is placed in the plating
solution 12 and brought into contact with the other surface to be
plated (e.g., a back surface) of the printed wiring board 30. The
elevator device 24 vertically moves the insulative bodies (20A,
20B) along the printed wiring board 30. The insulative bodies (20A,
20B) are moved by the elevator bars 22 which move vertically by
means of the elevator device 24. The printed wiring board 30 is
connected to a cathode side. Inside the plating tank 14, an anode
not shown in the drawing is provided, and metal sources such as
copper balls are stored in the anode. The plating solution 12
contains, e.g., copper sulfate, sulfuric acid and iron ions. The
plating solution 12 before the plating is started contains
iron(III) ions. As the plating proceeds, iron(II) ions are
produced, and thus iron(II) and iron(III) ions exist in the plating
solution 12. As for the iron-ion source, iron(II) sulfate is
preferred. Hydrates are preferred as iron sulfate; iron sulfate
7-hydrate (FeSO.sub.4.7H.sub.2O) is preferred. By performing dummy
plating, the concentration of Fe.sup.2+ and the concentration of
Fe.sup.3+ can be adjusted.
[0020] With reference to FIGS. 13A-13F, the following describes a
method that uses the plating apparatus 10 to form an electrolytic
plated film for a printed wiring board (substrate) 30. Openings
(31a, 31b) are formed in the substrate 30 having a first surface
(30A) and a second surface (30B) opposite the first surface (30A)
(FIG. 13A). The openings (31a, 31b) include penetrating holes for
through-hole conductors (through-hole conductor openings) and via
holes. In this example, the opening (31a) is a penetrating hole and
the opening (31b) is a non-penetrating hole (via-conductor
opening). A seed layer 34 is formed on the first and second
surfaces (30A, 30B) of the substrate 30 and the inner walls of the
openings (31a, 31b) (FIG. 13B). As examples of a seed layer, an
electroless plated film, a sputtered film and a vapor-deposited
film can be listed. Alternatively, by providing conductive
particles such as Pd or C on the inner walls of the through holes
and the substrate surfaces, an electrolytic plated film can be
formed directly on the substrate surfaces and the inner walls of
the openings (31a, 31b). In such a case, conductive particles work
as a seed layer. The seed layer 34 in this example is an
electroless copper-plated film. The substrate 30 with the seed
layer 34 is placed in the plating solution 12 to form an
electrolytic plated film 36. An example of the composition of the
plating solution 12 and the plating conditions are below.
TABLE-US-00001 <Composition of Plating Solution 12> Copper
sulfate concentration: 0.8 .+-. 0.1 mol/L Sulfuric acid
concentration: 0.5 .+-. 0.15 mol/L Chloride-ion concentration:
5-100 ppm Iron-ion concentration: 1 g/L-20 g/L The iron-ion
concentration is the total value of those of iron(II) ions and
iron(III) ions. The concentration of iron(II) ions:concentration of
iron(III) ions = 1:2-1:4 Additive concentration: 5 .+-. 1 mol/L
TABLE-US-00002 <Plating Conditions> Current density: 0.5-5
A/dm.sup.2
[0021] The insulative body (20A) is pressed against the first
surface (30A) of the substrate 30, and the insulative body (20B) is
pressed against the second surface (30B) of the substrate 30 (FIG.
13C). When the insulative bodies (20A, 20B) contact the substrate
30, the insulative bodies (20A, 20B) are preferably pushed further
by, for example, 1.0-15.0 mm into the substrate surfaces after they
come in contact with the substrate surfaces (surfaces to be
plated). If the amount to be pushed is less than 1.0 mm, the result
tends to be the same as plating without using the insulative bodies
(20A, 20B). If the amount to be pushed exceeds 15.0 mm, the
thickness of the plated film in the openings (31a, 31b) tends to
vary, since the supply of the plating solution 12 will be hampered.
The amount to be pushed is most preferably 2-8 mm. The variation in
the plated film on the substrate surfaces and in the openings (31a,
31b) will be less. Also, the thickness of the electrolytic plated
film formed on the substrate surfaces will be reduced.
[0022] While the insulative bodies (20A, 20B) are in contact with
the substrate 30, the substrate 30 and the insulative bodies (20A,
20B) move relative to each other (FIG. 13C)). The moving speed of
the insulative bodies (20A, 20B) relative to the substrate 30 is
preferably 1.0-16.0 m/min. Within such a range, iron ions can be
appropriately fed onto the substrate surfaces. As a result, the
film thickness of the electrolytic plated film 36 formed on the
substrate surfaces can be reduced. In addition, since the plating
solution 12 can be fed into the openings (31a, 31b) by the
insulative bodies (20A, 20B), plating can be filled in the openings
(31a, 31b).
[0023] In the present embodiment, the substrate 30 with seed layers
34 (see FIG. 13B) is placed in the plating solution 12 described
above. Then, the insulative bodies (20A, 20B) are pressed against
the substrate 30. While the insulative bodies (20A, 20B) are
pressed against the substrate 30, the insulative bodies (20A, 20B)
and the substrate 30 move relative to each other. While such
conditions are sustained, the electrolytic plated film 36 is formed
on the surfaces of the substrate 30 and in the openings (31a, 31b)
(FIG. 13C).
[0024] In the embodiment, while the insulative bodies (20A, 20B)
are in contact with the substrate 30 in an electrolytic plating
solution containing iron ions, the electrolytic plated film 36 is
formed on the surfaces of the substrate 30 and in the openings
(31a, 31b) of the substrate 30. Accordingly, iron(III) ions can be
readily fed onto the substrate surfaces that are to be plated.
Without wishing to be bound by any theory, it is thought that the
following reaction occurs on the surfaces of plated films.
2Fe.sup.3++Cu2Fe.sup.2++Cu.sup.2+ Reaction Formula (1)
[0025] If the above reaction occurs, it is thought that deposition
and dissolution of the plated film will occur in areas with which
the insulative bodies (20A, 20B) are in contact. It is thought that
the growth speed of the plated film on the substrate surfaces will
slow down. By contrast, since the plated film in the openings (31a,
31b) does not make contact with the insulative bodies (20A, 20B) at
the initial point of plating, it is thought that the growth of the
electrolytic plated film 36 in the openings (31a, 31b) will seldom
be suppressed by the iron ions. Since iron(III) ions are diffused
into the openings (31a, 31b) through the concentration gradient,
the concentration of iron(III) ions is thought to be low. Thus, in
the embodiment, it is thought that the openings (31a, 31b)
(including penetrating holes and non-penetrating holes (via holes))
can be filled with the electrolytic plated film 36 while the
thickness of the electrolytic plated film 36 on the substrate
surfaces is relatively small. When the electrolytic plated film 36
in the openings (31a, 31b) gradually thickens, the insulative
bodies (20A, 20B) come in contact with the surface of the
electrolytic plated film 36 that fills the openings (31a, 31b).
When being in contact with the insulative bodies (20A, 20B), the
electrolytic plated film 36 filling the openings (31a, 31b) and the
electrolytic plated film 36 on the substrate surfaces have growth
speeds that are thought to become the same. Accordingly, the
electrolytic plated films 36 obtained in the present embodiment are
thought to be uniform and thin.
[0026] Without wishing to be bound by any theory, an alternative
mechanism may be possible in which plating is suppressed from
deposition through the following reaction.
Fe.sup.3++Cu.sup.2++3e.sup.-Fe.sup.2++Cu Reaction Formula (2)
[0027] In Reaction Formula (2), since electrons for depositing
copper-plated film are used to reduce iron(III) ions into iron(II)
ions, it is thought that the growth of the plated film is
suppressed. In Reaction Formula (2), for the same reason as in
Reaction Formula (1), it is thought that plating is filled in the
openings (31a, 31b), while the thickness of the plated film on the
substrate surfaces remains relatively small.
[0028] The above reactions (Reaction Formula (1) and Reaction
Formula (2)) could occur as well with ions other than iron ions.
However, in the embodiment, since it is thought that iron ions are
forcibly fed onto the plated-film surface using the insulative
bodies (20A, 20B), iron is considered to be preferred as the metal
ions added to the plating solution 12. That may be because
ionization tendencies of iron and copper are similar. Compared with
conventional technology, the method for forming a plated film on
the substrate surfaces and in the openings (31a, 31b) of the
substrate 30 while insulative bodies (20A, 20B) are in contact with
the substrate 30 in an electrolytic plating solution containing
iron ions is excellent in forming fine wiring, for example. When an
electrolytic plated film is formed on a substrate with openings
using the embodiment of the present invention and conventional
technology, the thickness of electrolytic plated film (the
thickness of the plated film formed on the substrate) obtained
using the embodiment of the present invention is approximately
one-half to one-third of the thickness of the electrolytic plated
film (the thickness of the plated film formed on the substrate)
obtained using conventional technology. Openings can be filled with
plated film in the embodiment of the present invention the same as
in conventional technology.
[0029] By using the plating method of the embodiment, the openings
(31a, 31b) can be filled with plating, and the surface of the
plated film exposed through the openings (31a, 31b) tend to be flat
(see FIGS. 13D and 13E). Moreover, the top surface of the plated
film exposed through the openings and the top surface of the plated
film formed on a substrate surface may be positioned on the same
level, and the electrolytic plated film 36 on the substrate
surfaces can be formed thinly. According to the plating method of
the present embodiment, filling deep openings with plated film and
reducing the thickness of the plated film formed on the substrate
surfaces can be achieved at the same time. After that, by
patterning the thin electrolytic plated film 36 and the seed layer
34 on the substrate surfaces, fine-pitch conductive circuits can be
formed (FIG. 13F). At the same time, through-hole conductors 42,
via conductors 60 and conductive circuits 58 are completed.
[0030] Furthermore, if the insulative bodies (20A, 20B) comprised
of a porous resin (e.g., sponge) or a brush are used, iron(III)
ions tend to be fed onto the surfaces that are to be plated. This
may be because the plating solution 12 is easily fed onto the
substrate surfaces through the pores of the porous resin or the
spaces between the bristles of the brush. The plated film formed on
the substrate surfaces tends to be thin.
[0031] In areas with which the insulative bodies (20A, 20B) are in
contact, the growth of the electrolytic plated film 36 slows down.
Namely, iron ions are forcibly fed by the insulative bodies (20A,
20B) onto plating interfaces, a reaction to reduce iron(III) ions
to iron(II) ions occurs, and deposition of copper is suppressed. In
the penetrating holes (31a) with which the insulative bodies (20A,
20B) are not in contact, iron(III) ions are not fed forcibly, but
are only diffused by the concentration gradient onto plating
interfaces, the degree of reduction reaction of iron(III) ions is
low, and the electrolytic plated film 36 grows. Accordingly, the
electrolytic plated film 36 on the surface of a core substrate can
be formed thinly, while the through-hole conductor 42 is
filled.
[0032] According to the embodiment of the present invention, not
only can the openings be filled with electrolytic plated film, but
the electrolytic plated film formed on the substrate surfaces can
remain thin. Therefore, the embodiment of the present invention is
applicable especially to the procedure for forming an electrolytic
plated film by methods (such as the subtractive method and tenting
method) where the electrolytic plated film is formed on the entire
substrate surfaces, and conductive circuits are formed by etching.
Since fine-pitch conductive circuits can be formed, applying the
embodiment of the present invention is advantageous for making a
highly integrated board.
[0033] <Manufacturing Method 1>
[0034] A method for manufacturing a multilayer printed wiring board
(Manufacturing Method 1) is described with reference to FIGS.
1A-6.
[0035] FIG. 6 is a cross-sectional view of a multilayer printed
wiring board 100. The multilayer printed wiring board 100 has a
core substrate 30, conductive circuits 40, through-hole conductors
42, and interlayer resin insulation layers (50, 150). The core
substrate 30 has a first surface (top surface in FIG. 6) and a
second surface (bottom surface in FIG. 6) opposite the first
surface. The conductive circuits 40 are provided on the first and
second surfaces of the core substrate 30. The conductive circuits
40 are connected by the through-hole conductors 42. Formed on the
core substrate 30 and the conductive circuits 40 are the interlayer
resin insulation layers 50, where via conductors 60 and conductive
circuits 58 are formed. The interlayer resin insulation layers 150,
where via conductors 160 and conductive circuits 158 are formed,
are formed on the interlayer resin insulation layers 50. A
solder-resist layer 70 with opening portions 71 is formed on the
via conductors 160, conductive circuits 158 and interlayer resin
insulation layer 150. Bumps (76U, 76D) are formed on the via
conductors 160 and conductive circuits 158 exposed through the
opening portions 71 in the solder-resist layer 70.
[0036] In the following, the steps for manufacturing the multilayer
printed wiring board 100 shown in FIG. 6 are described with
reference to FIGS. 1A-5B.
[0037] A double-sided copper-clad laminate with a thickness of, for
example, 0.8 mm is prepared (FIG. 1A). The core substrate
(insulative substrate) 30 of the double-sided copper-clad laminate
is made of a glass-epoxy resin or a BT (bismaleimide triazine)
resin and a core material such as glass cloth. On the first surface
of the core substrate 30 and on the second surface opposite the
first surface, copper foils (130A, 130B) are laminated. Penetrating
holes 32 for through-hole conductors are formed in the double-sided
copper-clad laminate using a drill or a laser (FIG. 1B).
[0038] Catalyst nuclei are attached to the surfaces of the
double-sided copper-clad laminate and the inner-wall surfaces of
the penetrating holes 32 for through-hole conductors (not shown in
the drawings). The core substrate 30 with the attached catalyst is
immersed in a commercially available electroless copper plating
solution (such as THRU-CUP made by C. Uyemura Co., Ltd.) to form an
electroless copper-plated film 34 with a thickness of 0.3-3.0 .mu.m
on the substrate surfaces and inner walls of the penetrating holes
32 (FIG. 1C).
[0039] After being cleansed with 50.degree. C. water to degrease,
washed with 25.degree. C. water, and further cleansed with sulfuric
acid, the core substrate 30 is immersed in an electrolytic copper
plating solution 12 with the following composition. After that, by
using the plating apparatus 10 described above with reference to
FIG. 9, an electrolytic plated film 36 is formed on both surfaces
of the copper-clad laminate and in the penetrating holes under the
following conditions (FIG. 1D).
TABLE-US-00003 <Composition of Electrolytic Plating Solution
12> Sulfuric acid 0.5 mol/L Copper sulfate 0.8 mol/L Iron
sulfate 7-hydrate 5 g/L (FeSO.sub.4.cndot.7H.sub.2O) Leveling agent
50 mg/L Polishing agent 50 mg/L Fe.sup.2+:Fe.sup.3+ 1:2-1:4
TABLE-US-00004 <Electrolytic Plating Conditions> Current
density 1 A/dm.sup.2 Time 65 minutes Temperature 22 .+-. 2.degree.
C.
[0040] Here, as described above with reference to FIG. 9, the
insulative bodies (20A, 20B), using a porous resin, are vertically
moved along the surfaces that are to be plated, and the
electrolytic copper-plated film 36 is formed on the core substrate
30 while penetrating holes 32 are filled with plating. The
penetrating holes 32 are filled with the electrolytic copper-plated
film 36. During that time, the moving speed of the insulative
bodies (20A, 20B) is 7 m/min., the size of the insulative bodies
(20A, 20B) relative to that of the core substrate is 0.80, and the
amount that the insulative bodies (20A, 20B) are to be pushed is 8
mm.
[0041] Thereafter, an etching resist 38 with a predetermined
pattern is formed on the electrolytic plated films 36 (FIG.
1E).
[0042] The electrolytic plated film 36, the electroless plated film
34 and the copper foils (130A, 130B) left exposed by the etching
resists 38 are removed by etching, and the through-hole conductors
40 and conductive circuits 42 are formed (FIG. 2A).
[0043] A roughened surface (40a) is formed on the entire surfaces
of the conductive circuits 40 and the top surfaces of the
through-hole conductors 42 (FIG. 2B).
[0044] <Forming Built-Up Layers>
[0045] On both surfaces of the core substrate 30, a resin film
(brand name: ABF-45SH, made by Ajinomoto Fine-Techno Co., Inc.) for
interlayer resin insulation layers is laminated. Then, by curing
the resin film for interlayer resin insulation layers, the
interlayer resin insulation layer 50 is formed on both surfaces of
the core substrate 30 (FIG. 2C).
[0046] By using a CO.sub.2 gas laser, via-conductor openings (50a)
with a diameter of 80 .mu.m are formed in the interlayer resin
insulation layers 50 (FIG. 2D).
[0047] The substrate 30 with the via-conductor openings (50a) is
immersed for 10 minutes in an 80.degree. C. solution containing 60
g/L of permanganic acid, and the roughened surface (50.alpha.) is
formed on the surfaces of the interlayer resin insulation layers 50
including the inner walls of the via-conductor openings (50a) (FIG.
2E).
[0048] The substrate 30 is immersed in a neutralizing solution
(made by Shipley Company) and then washed with water. Furthermore,
catalyst nuclei (not shown in the drawings) are attached to the
surfaces of interlayer resin insulation layers 50 and the
inner-wall surfaces of via-conductor openings (50a).
[0049] The substrate 30 with attached catalyst is immersed in a
commercially available electroless copper plating solution to form
an electroless copper-plated film 52 with a thickness of 0.3-3.0
.mu.m on the surfaces of the interlayer resin insulation layers 50
and the inner walls of the via-conductor openings (50a) (FIG.
3A).
[0050] After being cleansed with 50.degree. C. water to degrease,
washed with 25.degree. C. water, and further cleansed with sulfuric
acid, the substrate 30 with the interlayer resin insulation layers
50 is immersed in the electrolytic copper plating solution 12
having the same composition as above. Using the plating apparatus
10 described above with reference to FIG. 9, under the conditions
described above, an electrolytic copper-plated film 56 is formed on
the interlayer resin insulation layers 50 and in via-conductor
openings (50a) (FIG. 3B). The via-conductor openings (50a) are
filled with the electrolytic copper-plated film 56.
[0051] Here, as described above with reference to FIG. 9, while the
insulative bodies (20A, 20B) using a porous resin are vertically
moved along the surfaces that are to be plated, plating is filled
in the openings (50a) and the electrolytic copper-plated film 56
with a thickness of 12 .mu.m is also formed on the surfaces of the
interlayer resin insulation layers 50. The moving speed of the
insulative bodies (20A, 20B) is 7 m/min., the size of the
insulative bodies (20A, 20B) relative to that of the core substrate
30 is 0.80, and the amount that the insulative bodies (20A, 20B)
are to be pushed is 8 mm.
[0052] Thereafter, an etching resist 54 is formed on electroless
copper-plated films 56 (FIG. 3C). The electrolytic plated film 56
and electroless plated-film 52 left exposed by the etching resists
54 are removed by etching. Then, by removing the etching resists
54, independent upper-layer conductive circuits 58 and filled vias
60 are formed (FIG. 3D). Roughened surfaces (58.alpha., 60.alpha.)
are formed on the surfaces of upper-layer conductive circuits 58
and filled vias 60 (FIG. 4A).
[0053] By repeating the above steps described with reference to
FIGS. 2B-4A, further upper-layer interlayer insulation layers 150,
conductive circuits 158 and filled vias 160 are formed, and a
multilayer wiring board 300 is obtained (FIG. 4B).
[0054] A commercially available solder-resist composition (such as
SR 7200 made by Hitachi Chemical Co., Ltd.) 70 is applied on both
surfaces of the multilayer wiring board 300 to be 20 .mu.m thick
(FIG. 4C), on which a dry treatment is conducted at 70.degree. C.
for 20 minutes and at 70.degree. C. for 30 minutes. After that,
through exposure and development treatments, openings 71 to expose
conductive circuits and filled vias are formed in solder-resist
composition (FIG. 5A). Then, by conducting heat treatments under
the conditions of 80.degree. C. for an hour, 100.degree. C. for an
hour, 120.degree. C. for an hour and 150.degree. C. for three hours
respectively, the solder-resist composition is cured, and the
solder-resist layer 70 with openings to expose conductive circuits
and filled vias is formed on interlayer resin insulation layers.
The top surfaces of the conductive circuits and filled vias exposed
through the openings in the solder-resist layers work as pads for
mounting electronic components and pins.
[0055] A nickel layer, a palladium layer and a gold layer are
formed in that order on the pads exposed through the openings in
the solder-resist layer 70. After that, solder balls are supplied
onto the pads and then reflowed. Accordingly solder bumps (solder
bodies) (76U, 76D) are formed on the pads. The multilayer printed
wiring board 100 having the solder bumps (76U, 76D) is completed
(FIG. 6).
[0056] <Manufacturing Method 2>
[0057] In the following, the manufacturing steps according to
Manufacturing Method 2 are described with reference to FIGS. 7A-7D.
As illustrated in FIG. 7B, a plating resist 54 is formed on an
intermediate substrate which is in the state shown in FIG. 3A. This
is different from Method 1 described above with reference to FIGS.
3A-3D where an electrolytic plated film 56 is formed on the entire
surface of an electroless plated film 53.
[0058] After being cleansed with 50.degree. C. water to degrease,
washed with 25.degree. C. water and further cleansed with sulfuric
acid, the substrate 30 is immersed in an electrolytic copper
plating solution 12 having the same composition described in Method
1. An electrolytic copper-plated film 56 is formed on interlayer
resin insulation layers 50 and in the via-conductor openings under
the same conditions as above, and via-conductor openings are filled
with the electrolytic copper-plated film 56 (FIG. 7C).
[0059] Here, as described above with reference to FIG. 9,
insulative bodies (20A, 20B) using a porous resin are vertically
moved along the surfaces that are to be plated, and the
electrolytic copper-plated film 56 is formed on the interlayer
resin insulation layers 50 and in the via-conductor openings, while
the via-conductor openings are filled with plating. The
via-conductor openings are filled with the electrolytic
copper-plated film 56. The moving speed of the insulative bodies
(20A, 20B) is 7 m/min., the size of the insulative bodies (20A,
20B) relative to that of the core substrate 30 is 0.80, and the
amount that the insulative bodies (20A, 20B) are to be pushed is 8
mm.
[0060] Plating resists 54 are removed using a 5% KOH solution.
After that, by removing the electroless plated film 52 that are not
covered by the electrolytic plated film 56, independent upper-layer
conductive circuits 58 and filled vias 60 are formed (FIG. 7D).
Since the subsequent steps are the same as in Manufacturing Method
1, their descriptions are omitted.
[0061] <Manufacturing Method 3>
[0062] In the following, the manufacturing steps according to
Manufacturing Method 3 are described with reference to FIGS. 8A-8F.
This method is an example relating to a method for manufacturing a
printed wiring board having hourglass-shaped through-hole
conductors. Here, an hourglass-shaped through-hole conductor
indicates a through-hole conductor made by filling plating in a
penetrating hole which is made up of a first opening tapering from
the first surface of core substrate 30 toward the second surface,
and of a second opening tapering from the second surface toward the
first surface.
[0063] A double-sided copper-clad laminate (30C) is prepared, made
by laminating copper foils (130A, 130B) on both surfaces of the
core substrate 30. The core substrate 30 has a first surface and a
second surface opposite the first surface. Copper foil (130A) is
formed on the first surface of the core substrate 30 and the copper
foil (130B) is formed on the second surface of the core substrate
30 (FIG. 8A).
[0064] CO.sub.2 laser is applied from the first-surface side of the
core substrate 30. A first opening (136A) is formed, penetrating
the copper foil (130A) and tapering from the first surface of the
core substrate 30 toward the second surface (FIG. 8B). Tapering
from the first surface toward the second surface has the diameter
of the first opening (136A) gradually becoming smaller from the
first surface toward the second surface. Regarding the diameter of
the first opening (136A), when the first opening (136A) is sliced
by a plane parallel to the first surface, the distance across the
cross section is the diameter if the first opening (136A) is a
circle, and the major axis if it is an oval.
[0065] Then, CO.sub.2 laser is applied from the second-surface side
of the core substrate 30. The position to be irradiated by a laser
is opposite the first opening (136A). A second opening (136B) is
formed, penetrating the copper foil (130B) and tapering from the
second surface of the core substrate 30 toward the first surface.
By forming the second opening (136B), the first and second openings
(136A, 136B) are joined inside the core substrate 30, and a
penetrating hole 136 comprised of the first and second openings
(136A, 136B) is formed in the core substrate 30 (FIG. 8C). Tapering
from the second surface toward the first surface has the diameter
of the second opening (136B) gradually becoming smaller from the
second surface toward the first surface. Regarding the diameter of
the second opening, when the second opening is sliced by a plane
parallel to the first surface, the distance across the cross
section is the diameter if the second opening is a circle, and the
major axis if it is an oval.
[0066] A seed layer 137 made of a sputtered film is formed on the
surfaces of the copper foils (130A, 130B) and the inner walls of
the penetrating hole 136. The seed layers 137 are made of copper.
Since the first and second openings (136A, 136B) are tapered, the
seed layers 137 are easily formed by sputtering. However, the seed
layers 137 can be formed by electroless plating.
[0067] An electrolytic copper-plated film 134 is formed on the
first and second surfaces of the core substrate 39 using the same
plating apparatus 10, plating solution 12, plating method and
plating conditions as described in Manufacturing Method 1. During
that time, penetrating hole 136 is filled with an electrolytic
copper-plated film 134 (FIG. 8E). While the penetrating hole 32 in
Manufacturing Method 1 is in a substantially straight shape, the
penetrating hole 136 in this Manufacturing Method 3 is in an
hourglass shape. When forming a penetrating hole in the same core
substrate to have the same diameter (the diameter on the front and
back surfaces of the core substrate), the volume of an
hourglass-shaped penetrating hole is smaller than the volume of a
straight-shaped penetrating hole. Due to such a difference, the
thickness of the electrolytic plated film on the core substrate in
Manufacturing Method 3 tends to be thinner than the thickness of
the electrolytic plated film on the substrate in Manufacturing
Method 1. As such, fine conductive circuits can be formed by
Manufacturing Method 3.
[0068] In the same manner as in Manufacturing Method 1, an etching
resist is formed on electrolytic copper-plated films 134. After
that, the electrolytic plated film 134, sputtered film 137 and
copper foils (30A, 30B) left exposed by the etching resists are
dissolved and removed. Accordingly, independent conductive circuits
(134A) and through-hole conductors 142 are formed (FIG. 8E). Then,
built-up layers may be formed on the core substrate in the same
manner as in Manufacturing Method 1.
Second Embodiment
[0069] A plating apparatus used in a method for manufacturing a
printed wiring board according to Second Embodiment of the present
invention is described with reference to FIGS. 10 and 11.
[0070] FIG. 11 is a schematic illustration showing a side view of a
plating apparatus 210, and FIG. 10 is a schematic illustration
showing a structure of the conveyor mechanism positioned on one
side of the plating tank in the plating apparatus 210. The plating
apparatus 210 performs plating on a strip-type substrate for
flexible printed wiring boards. In this plating apparatus 210,
electrolytic plating is conducted on one surface of a strip
substrate (230A) pulled from a reel (298A) on which a 180 mm-wide
and 120 m-long strip substrate is wound. Then, the strip-type
substrate (230A) will be wound onto a reel (298B). The plating
apparatus 210 has insulative cylindrical contact bodies 220 making
contact with the surface of the strip substrate (230A) to be
plated, a back board 228 to prevent strip substrate (230A) from
warping caused by the contact body (insulative body) 220, and an
anode 204. In the anode 204, copper balls 206 are accommodated to
supplement copper ingredients in the plating solution. A plating
tank 212 is a total of 20 m long. Instead of an insulative material
for the contact body 220, a semiconductor contact body can also be
used. The contact body 220 in Second Embodiment has substantially
the same function as that of the insulative bodies (20A, 20B)
described in First Embodiment.
[0071] The contact body 220 is formed with a cylindrical brush made
of PVC (polyvinyl chloride) with a height of 200 mm and a diameter
of 100 mm. In the contact body 220, the tip of the brush makes
contact with a printed wiring board and bends. The contact body 220
is supported by a support bar (220A) made of stainless steel and is
rotated by a gear which is not shown in the drawing.
[0072] Forming filled vias and conductive circuits using the
plating apparatus 210 is described with reference to FIGS. 12A-12E.
FIG. 12A shows a double-sided copper-clad flexible substrate
comprised of a substrate 230 and copper foils (33U, 33D). A
commercially available dry film is laminated on one surface of the
substrate 230, and the copper foil (33U) is etched away using a
known photographic method from areas where via-conductor openings
37 will be formed. Using the copper foil (33U) as a mask,
via-conductor openings 37 are formed by a carbon-dioxide gas laser
(see FIG. 12B). An electroless plated film 34 is formed on the
copper foil (33U) and the inner walls of the via-conductor openings
37 (FIG. 12C), and then an electrolytic plated film 36 is formed
using the plating apparatus 210 shown in FIG. 10 (FIG. 12D). The
plated film 36 is formed while part of the contact body 220 is in
contact with at least part of the surface of the printed wiring
board. The contact body 220 makes contact with the electroless
plated film 34 on the printed wiring board at the initial point of
electroplating, and comes in contact with the electrolytic plated
film 36 once the electrolytic plated film 36 is formed.
[0073] According to Second Embodiment, the plating solution 12
contains copper sulfate, sulfuric acid and iron ions, as in First
Embodiment. Since the plating solution 12 contains iron(III) ions,
the thickness of the electrolytic plated film 36 formed on
substrate surfaces is smaller, compared with that obtained by using
plating solutions that do not contain iron(III) ions at a high
concentration. In addition, since the plated film 36 is formed
using the contact body 220, via-conductor openings can be filled
with the electrolytic plated film 36.
[0074] The size of a contact body is preferably the same as or
greater than the area to be plated on the strip substrate. The
amount that a contact body is to be pushed into a printed wiring
board (after the tip of a contact body comes in contact with a
surface of the printed wiring board, the amount of the tip to be
further pushed) is preferably 1.0-15.0 mm into the surface. If the
amount is less than 1.0 mm, the result may be the same as that of a
plating method without using a contact body. If the amount exceeds
15.0 mm, it is thought that feeding iron(III) ions onto the
substrate surface will become difficult. Also, the contact body
tends to enter via-conductor openings and through-hole conductor
openings, and thus the concentration of iron(III) ions in the
openings is thought to rise. The amount to be pushed is preferably
2-8 mm. That is because variations in plated film may seldom
occur.
[0075] As for a contact body, one selected from among flexible
brushes and spatulas can be preferably used. Being flexible, a
contact body follows the irregularities on a substrate and can form
a plated film with a uniform thickness on the irregular
surface.
[0076] A resin brush can be used as a contact body. In such a case,
the bristle tips make contact with a surface to be plated. Here,
the diameter of the bristle is preferably greater than the diameter
of an opening, because the bristle tips will not enter the openings
and plated film can be filled appropriately in the openings. As for
a resin brush, PP, PVC (polyvinyl chloride), PTFE
(polytetrafluoroethylene) or the like having tolerance to plating
solutions can be used. Also, resin and rubber can be used.
Furthermore, as for a bristle tip, resin fabric such as
vinyl-chloride woven fabric or non-woven fabric can also be
used.
[0077] <Manufacturing Method 4>
[0078] A method for manufacturing a printed wiring board using a
plating apparatus according to Second Embodiment (using, e.g.,
subtractive method, tenting method) is described with reference to
FIGS. 12A-12E. The method is referred to as Manufacturing Method 4
below.
[0079] A laminated strip-type substrate (230A) is prepared as a
starting material, in which 9 .mu.m copper foil (33U) is laminated
on a front surface (first surface) of 25 .mu.m-thick polyimide
strip substrate 230, and 12 .mu.m copper foil (33D) is laminated on
a back surface (second surface) (FIG. 12A). The copper foil on the
second surface is covered with a resist. The thickness of 9 .mu.m
copper foil (33U) on the front surface is adjusted by light etching
to be 7 .mu.m. After that, a black-oxide treatment is conducted on
the copper foil on the first surface. By irradiating a laser from
the first-surface side, via-conductor openings 37 are formed which
penetrate copper foil (33U) and polyimide strip substrate 30, and
reach the back surface of copper foil (33D) (FIG. 12B). Then, a
palladium catalyst is attached to the surface of strip substrate
(230A) (not shown in the drawing).
[0080] The substrate with attached catalyst is immersed in an
electroless plating solution (Thru-Cup) made by C. Uyemura Co.,
Ltd. and 1.0 .mu.m-thick electroless plated film (seed layer) 34 is
formed on the first surface of strip substrate (230A) (FIG.
12C).
[0081] After being cleansed with 50.degree. C. water to degrease,
washed with 25.degree. C. water, and further cleansed with sulfuric
acid, the strip substrate (230A) is immersed in a plating tank
containing an electrolytic copper plating solution with the
following composition. Using plating apparatus 210 described above
with reference to FIG. 10, the electrolytic plated film 36 is
formed on the seed layer 34 under the following conditions (FIG.
12D).
TABLE-US-00005 <Composition of Electrolytic Plating Solution>
Sulfuric acid 0.5 mol/L Copper sulfate 0.8 mol/L Iron sulfate
7-hydrate 100 g/L (FeSO.sub.4.cndot.7H.sub.2O) Leveling agent 50
mg/L Polishing agent 50 mg/L Fe.sup.2+:Fe.sup.3+ 1:2-1:4
TABLE-US-00006 <Electrolytic Plating Conditions> Current
density 5.0-30 mA/cm.sup.2 Time 10-90 minutes Temperature 22 .+-.
2.degree. C.
[0082] Here, the current density is preferably set at 5.0-30
mA/cm.sup.2, especially at 10 mA/cm.sup.2 or greater. Then, by
forming a resist with a predetermined pattern on both surfaces of
the strip substrate and conducting etching, conductive circuits
(42U) and conductive circuits (42D) are formed (FIG. 12E). This is
a so-called subtractive method or a tenting method.
[0083] <Manufacturing Method 5>
[0084] The composition of the electrolytic plating solution in
Manufacturing Method 3 is changed to the following composition. The
rest is the same as in Manufacturing Method 3.
TABLE-US-00007 <Composition of Electrolytic Plating Solution>
Sulfuric acid 0.5 mol/L Copper sulfate 0.8 mol/L Iron sulfate
7-hydrate 50 g/L (FeSO.sub.4.cndot.7H.sub.2O) Leveling agent 50
mg/L Polishing agent 50 mg/L Fe.sup.2+:Fe.sup.3+ 1:2-1:4
[0085] <Manufacturing Method 6>
[0086] The composition of the electrolytic plating solution in
Manufacturing Method 3 is changed to the following composition. The
rest is the same as in Manufacturing Method 3.
TABLE-US-00008 <Composition of Electrolytic Plating Solution>
Sulfuric acid 0.5 mol/L Copper sulfate 0.8 mol/L Iron sulfate
7-hydrate 100 g/L (FeSO.sub.4.cndot.7H.sub.2O) Leveling agent 50
mg/L Polishing agent 50 mg/L Fe.sup.2+:Fe.sup.3+ 1:2-1:4
[0087] When Manufacturing Methods 5 and 6 are compared, the plated
film exposed through the openings tends to be recessed in
Manufacturing Method 6. This is assumed to be because plating
growth inside the openings is slow due to a larger amount of
iron(III) ions in Manufacturing Method 6. If a concentration of
iron ions is 1 g/L-10 g/L, the plated film exposed through the
openings will show a higher flatness feature. Thus, an interlayer
resin insulation layer may be easily formed on the plated film. The
iron ions in the plating solution are iron(II) ions and iron(III)
ions. If the ratio of the concentration of iron(II) ions and that
of iron(III) ions in an electrolytic plating solution is in the
range of 1:2-1:4, plated film will be effectively suppressed from
being deposited on a substrate surface. Filling the openings and
reducing the film thickness of the plated film on a substrate
surface may both tend to be achieved. Iron sulfate 7-hydrate
(FeSO.sub.4.7H.sub.2O) is preferably added in the amount of 5-100 g
to 1,000 mL of the electrolytic plating solution. If the
concentration of iron ions is in the range of 1 g/L-20 g/L,
openings may be filled with plating while reducing the thickness of
the plated film on a substrate surface.
[0088] <Manufacturing Method 7>
[0089] The composition of the electrolytic plating solution in the
Manufacturing Method 3 is changed to the following composition. The
rest is the same as in Manufacturing Method 3.
TABLE-US-00009 <Composition of Electrolytic Plating Solution>
Sulfuric acid 0.65 mol/L Copper sulfate 0.7 mol/L Iron sulfate
7-hydrate 50 g/L (FeSO.sub.4.cndot.7H.sub.2O) Leveling agent 50
mg/L Polishing agent 50 mg/L Fe.sup.2+:Fe.sup.3+ 1:2-1:4
[0090] <Manufacturing Method 8>
[0091] The composition of the electrolytic plating solution in
Manufacturing Method 3 is changed to the following composition. The
rest is the same as in Manufacturing Method 3.
TABLE-US-00010 <Composition of Electrolytic Plating Solution>
Sulfuric acid 0.35 mol/L Copper sulfate 0.9 mol/L Iron sulfate
7-hydrate 50 g/L (FeSO.sub.4.cndot.7H.sub.2O) Leveling agent 50
mg/L Polishing agent 50 mg/L Fe.sup.2+:Fe.sup.3+ 1:2-1:4
[0092] In the embodiments and examples of the present invention, an
insulative body makes contact with a surface to be plated, and
electrolytic plating is conducted while moving the insulative body
relative to the surface to be plated. On the surface to be plated
with which the insulative body makes contact, the growth of plated
film slows down. It is thought that iron ions are forcibly fed by
an insulative body onto the surface to be plated, causing reduction
reactions of iron ions on the surface to be plated. Thus, it is
thought that growth of electrolytic plated film will be suppressed.
By contrast, in areas with which the insulative body does not make
contact, since iron ions are diffused onto the surface to be plated
due to a concentration gradient, reduction reactions of iron ions
are less likely to occur on the surface to be plated. Thus, it is
thought that the growth speed of electrolytic plated film will be
faster. Accordingly, the electrolytic plated film grows faster in
the via-conductor openings and through-hole conductor openings, but
the plated film on the surface to be plated excluding the openings
will be suppressed from being too thick. Namely, the via-conductor
openings and through-hole conductor openings are surely filled with
the electrolytic plated film, and the plated film on the surface to
be plated (substrate surface) can be formed to be relatively thin
compared with the thickness of the electrolytic plated film formed
in the openings, or compared with the film thickness of conductive
circuits in conventional technology. In the embodiments and
examples of the present invention, since thin plated films are
patterned, finer conductive circuits can be formed more easily than
in conventional cases.
[0093] The order and contents of the procedure in the above
embodiment may be modified freely within a scope that will not
deviate from the gist of the present invention. Also, some steps
may be omitted according to usage requirements or the like. For
example, corrections may also be made based on image rendering data
other than vector data.
[0094] Obviously, numerous modifications and variations of the
present invention are possible in light of the above teachings. It
is therefore to be understood that within the scope of the appended
claims, the invention may be practiced otherwise than as
specifically described herein.
* * * * *