U.S. patent application number 12/897344 was filed with the patent office on 2011-02-03 for electrodes located at storage capacitor wiring in active matrix substrate.
Invention is credited to Yuhko Hisada, Masanori Takeuchi, Toshihide Tsubata, Toshifumi YAGI.
Application Number | 20110025937 12/897344 |
Document ID | / |
Family ID | 34797814 |
Filed Date | 2011-02-03 |
United States Patent
Application |
20110025937 |
Kind Code |
A1 |
YAGI; Toshifumi ; et
al. |
February 3, 2011 |
ELECTRODES LOCATED AT STORAGE CAPACITOR WIRING IN ACTIVE MATRIX
SUBSTRATE
Abstract
The active matrix substrate of the present invention is the
active matrix substrate in which the faulty connection in a storage
capacitor element as caused by a short circuit between storage
capacitor electrodes due to a conductive foreign material or a
pinhole in an insulating layer or by a short circuit between a data
signal line and a storage capacitor upper electrode can be repaired
with ease. The active matrix substrate of the present invention is
the active matrix substrate comprising a thin film transistor
disposed at the crossing point of a scanning signal line with a
data signal line on the substrate, with a gate electrode of the
transistor being connected to the scanning signal line, a source
electrode thereof being connected to the data signal line and a
drain electrode thereof being connected to an interconnection
electrode, and a storage capacitor upper electrode disposed so as
to oppose a storage capacitor wiring pattern at least via an
insulating layer and connected to the interconnection electrode and
a pixel electrode, wherein the storage capacitor upper electrode
comprises at least three divided electrodes in the region opposing
the storage capacitor wiring pattern.
Inventors: |
YAGI; Toshifumi; (Tsu-shi,
JP) ; Tsubata; Toshihide; (Tsu-shi, JP) ;
Takeuchi; Masanori; (Tsu-shi, JP) ; Hisada;
Yuhko; (Matsusaka-shi, JP) |
Correspondence
Address: |
BIRCH STEWART KOLASCH & BIRCH
PO BOX 747
FALLS CHURCH
VA
22040-0747
US
|
Family ID: |
34797814 |
Appl. No.: |
12/897344 |
Filed: |
October 4, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12193513 |
Aug 18, 2008 |
7830467 |
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12897344 |
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11041361 |
Jan 25, 2005 |
7430024 |
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12193513 |
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Current U.S.
Class: |
349/39 |
Current CPC
Class: |
H01L 27/124 20130101;
G02F 1/136263 20210101; G02F 1/136259 20130101; H01L 27/1255
20130101 |
Class at
Publication: |
349/39 |
International
Class: |
G02F 1/1343 20060101
G02F001/1343 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 28, 2004 |
JP |
2004-020488 |
Dec 2, 2004 |
JP |
2004-349590 |
Claims
1. An active matrix substrate comprising a thin film transistor
disposed at the crossing point of a scanning signal line with a
data signal line on the substrate, with a gate electrode of the
transistor being connected to the scanning signal line, a source
electrode thereof being connected to the data signal line and a
drain electrode thereof being connected to a pixel electrode, and a
storage capacitor upper electrode disposed so as to oppose a
storage capacitor wiring pattern at least via an insulating layer,
characterized in that the storage capacitor upper electrode
comprises at least three divided electrodes in the region opposing
the storage capacitor wiring pattern and in that each divided
electrode is connected to the pixel electrode.
Description
[0001] REFERENCE TO RELATED APPLICATIONS
[0002] This application is a Divisional of co-pending application
Ser. No. 12/193,513, filed on Aug. 18, 2008; which is a Divisional
of application Ser. No. 11/041,361, filed on Jan. 25, 2005, now
U.S. Pat. No. 7,430,024; which claims priority Under 35 U.S.C.
.sctn.119(a) on Patent Application No. 2004-20488 filed in Japan on
Jan. 28, 2004 and No. 2004-349590 filed in Japan on Dec. 2, 2004,
the entire contents of which are hereby incorporated by
reference.
BACKGROUND OF THE INVENTION
[0003] 1. Field of the Invention
[0004] The present invention relates to an active matrix substrate
and a display device. More particularly, it relates to an active
matrix substrate provided with a thin film transistor and a storage
capacitor element at each pixel for driving the liquid crystal
layer, and to an active matrix type liquid crytal display
device.
[0005] 2. Description of the Related Art
[0006] Active matrix substrates are widely used in active matrix
type display devices such as liquid crystal display devices and
electroluminescence (EL) display devices. In the conventional
active matrix type liquid crystal display devices using such active
matrix substrates, a plurality of scanning signal lines and a
plurality of data signal lines intersecting with the scanning
signal lines are disposed on each substrate, and a thin film
transistor (hereinafter also referred to as "TFT"), among others,
is disposed at each point of intersection. An image signal is
transmitted to each pixel unit by the switching function of the TFT
and so forth. It has also been disclosed that each pixel unit be
provided with a storage capacitor element (cf. e.g. Japanese Kokai
Publication H06-95157, page 1). Such storage capacitor element
prevents the image signal from deteriorating due to the self
discharge of the liquid crystal layer or the OFF-state current in
the TFT during the OFF period of the TFT. Further, the storage
capacitor element is utilized not only for storing an image signal
during the OFF period of the TFT but also as a route for applying
any of various modulated signals in liquid crystal driving, for
instance. A liquid crystal display device equipped with storage
capacitor elements can realize low electricity consumption and high
picture quality.
[0007] An example of the structure of a conventional active matrix
substrate is now described referring to the drawings.
[0008] FIG. 4 is a schematic plan view illustrating the
constitution of one pixel in an active matrix substrate equipped
with a storage capacitor element and used in a conventional active
matrix type liquid crystal display device.
[0009] In FIG. 4, a plurality of pixel electrodes 51 are disposed
to form a matrix in an active matrix substrate, and a scanning
signal line 52 for feeding a scanning signal and a data signal line
53 for feeding a data signal are disposed surrounding those pixel
electrodes 51 and intersecting with each other. At each point of
intersection of the scanning signal line 52 and data signal line
53, there is disposed a TFT 54 as a switching element to be
connected to the pixel electrode 51. The scanning signal line 52 is
connected to the gate electrode of that TFT 54, and the TFT 54 is
driven and controlled by the scanning signal inputted into the gate
electrode. Further, the data signal line 53 is connected to the
source electrode of the TFT 54, and a data signal is inputted into
the source electrode of the TFT 54. Furthermore, to the drain
electrode, there are connected an interconnection electrode 55, one
electrode (storage capacitor upper electrode) 55a of a storage
capacitor element via the interconnection electrode 55, and the
pixel electrode 51 via a contact hole 56. A storage capacitor
(common) wiring pattern 57 functions as the other electrode
(storage capacitor lower electrode) of that storage capacitor
element.
[0010] FIG. 5 is a schematic sectional view illustrating a section
of the active matrix substrate shown in FIG. 4 as cut along the
line A-A'.
[0011] In FIG. 5, there is seen a gate electrode 62 disposed on a
transparent insulating substrate (insulator substrate) 61 made of a
glass, plastic or like material and connected to a scanning signal
line 52. The scanning signal line 52 and gate electrode 62 are
formed of a film or layer of a metal such as titanium, chromium,
aluminum or molybdenum or an alloy thereof, or a laminate thereof.
The storage capacitor (common) wiring pattern 57, which constitutes
the other electrode of the storage capacitor element (storage
capacitor lower electrode), is made of the same material as the
scanning signal line 52 and gate electrode 62. A gate insulator
(gate insulating layer) 63 is disposed to cover the same. The gate
insulator 63 is made of an insulation layer such as a silicon
nitride or silicon oxide layer. Thereon are disposed, in a manner
overlapping with the gate electrode 62, a high-resistivity
semiconductor layer 64 made of amorphous silicon, polysilicon or
the like, and a low-resistivity semiconductor layer consisting of
n.sup.+ amorphous silicon or the like doped with such an impurity
as phosphorus and coming to a source electrode 66a and a drain
electrode 66b. Further, a data signal line 53 is disposed so as to
connect to the source electrode 66a. Furthermore, an
interconnection electrode 55 is disposed so as to connect to the
drain electrode 66b, and the interconnection electrode 55 is
extended to constitute a storage capacitor upper electrode 55a,
which is one of the electrodes of the storage capacitor element,
and is connected to a pixel electrode via a contact hole 56. The
data signal line 53, interconnection electrode 55 and storage
capacitor upper electrode 55a are made of the same material, and a
layer of a metal such as titanium, chromium, aluminum or molybdenum
or an alloy thereof, or a laminate thereof is used as the material.
The pixel electrode 51 is formed, for example, of a transparent
conductive layer such as an ITO (indium tin oxide), IZO (indium
zinc oxide), zinc oxide or tin oxide layer. The contact hole 56 is
formed so as to pass through an interlayer insulating film or layer
68 formed to cover the top of each of the TFT 54, scanning signal
line 52, data signal line 53 and interconnection electrode 55. The
material of the interlayer insulating layer 68 is, for example, an
acrylic resin, silicon nitride, or silicon oxide. An active matrix
substrate having such a structure as shown in FIGS. 4 and 5 is
disclosed, for example, in Japanese Kokai Publication H09-152625,
pages 8-11 and 19, drawings 3 and 4.
[0012] In an active matrix substrate having such a structure, the
storage capacitor (common) wiring pattern (storage capacitor lower
electrode) and scanning signal line are formed in one and the same
step, and the storage capacitor upper electrode, data signal line
and interconnection electrode are fanned in one and the same step
for the purposes of simplifying the manufacturing step and reducing
the production cost. Further, when the pixel electrode is formed on
an interlayer insulating layer, as shown in FIG. 5, the pixel
electrode can be overlapped with each signal line, so that the
aperture ratio can be increased and, further, the effect of
shielding the pixel electrode against the electric field of each
signal line can also be produced. On that occasion, the connection
between the pixel electrode and drain electrode is secured via the
interconnection electrode by forming a contact hole in the
interlayer insulating layer on the storage capacitor (common)
wiring pattern or scanning signal line pattern to thereby connect
the pixel electrode to the storage capacitor upper electrode. The
position of the contact hole is not restricted to a site on the
storage capacitor upper electrode but may be on the interconnection
electrode. However, as shown in FIG. 4, the contact hole is
preferably formed at the site of the storage capacitor upper
electrode on a pattern of the storage capacitor (common) wiring
pattern, since the aperture ratio is not further reduced
thereby.
[0013] In the storage capacitor element in the active matrix
substrate as shown in FIGS. 4 and 5, the presence of a conductive
foreign material or a pinhole in the insulating layer between the
storage capacitor wiring pattern (storage capacitor lower
electrode) and storage capacitor upper electrode may result in a
short circuit between the storage capacitor wiring pattern (storage
capacitor lower electrode) and the storage capacitor upper
electrode, which, in turn, result in a dot defect at the site of
the short-circuited pixel in the image displayed; in this respect,
there is room for improvement. Further, in the case of
short-circuiting between the data signal line and storage capacitor
upper electrode, which are formed in one and the same step, due to
such a defect as a residual layer, a dot defect may appear in the
same manner and the defect cannot be repaired; in this respect,
there is also room for improvement.
[0014] As the countermeasure for such a dot defect, the method
comprising dividing the storage capacitor wiring pattern in the
pixel and the method comprising disposing a redundant line in the
storage capacitor wiring pattern are disclosed (cf. e.g. Japanese
Kokai Publication H01-303415, pages 2-4, drawing 1 and Japanese
Kokai Publication H09-222615, pages 3, 4, 6 and 7, drawings
1-3).
[0015] In the active matrix substrate in which the storage
capacitor wiring pattern is made redundant according to the method
of dividing the storage capacitor wiring pattern in the pixel as
disclosed in Japanese Kokai Publication H01-303415, the storage
capacitor (common) wiring pattern is partly multiplied within each
pixel and, further, there is provided a structure such that when a
conductive foreign material or a pinhole occurs in the insulating
layer between the storage capacitor wiring pattern (storage
capacitor lower electrode) and storage capacitor upper electrode
and causes short-circuiting, the short-circuited storage capacitor
wiring pattern (storage capacitor lower electrode) can be
destructed and eliminated by means of a laser, for instance.
[0016] However, these methods can indeed destruct and eliminate a
short-circuited storage capacitor wiring pattern (storage capacitor
lower electrode) by means of a laser, for instance, upon occurrence
of a short circuit between the storage capacitor wiring pattern and
storage capacitor upper electrode due to the presence of a
conductive foreign material or a pinhole in the insulating layer
between the storage capacitor wiring pattern (storage capacitor
lower electrode) and storage capacitor upper electrode but it is
difficult to attain such destruction and elimination without
damaging the insulating layer; in this respect, there is room for
improvement. Further, when the storage capacitor upper electrode
formed in the same step together with the data signal line is
short-circuited with the data signal line due to a residual layer,
for instance, the short-circuited storage capacitor upper electrode
cannot be repaired while allowing the same as a storage capacitor
element without resulting in a dot defect; in this respect, there
is room for improvement.
[0017] Further, a method comprising constituting the storage
capacitor electrode as an at least three-layer structure through
the intermediary of insulating layers has been disclosed (cf. e.g.
Japanese Kokai Publication H07-270824, pages 6-8, drawings 10 and
11). According to this method, the middle layer electrode (storage
capacitor lower electrode) of the storage capacitor electrode
formed in the form of at least three layers is divided into a
plurality of sections and each section is connected to the lower
layer electrode (storage capacitor lower electrode) via a contact
hole. This gives a structure such that a middle layer electrode
(storage capacitor lower electrode) short-circuited with the upper
layer electrode (storage capacitor upper electrode) can be
destructed and eliminated from the lower layer electrode (storage
capacitor lower electrode) by means of a laser or the like and, in
the case of a short circuit formed between the storage capacitor
element electrodes, the short-circuited storage capacitor
electrodes are partly destructed and eliminated by means of a laser
or the like; the short circuit of the storage capacitor electrodes
can be thus repaired to an extent such that the short circuit of
the storage capacitor electrodes will not affect the display
quality.
[0018] However, this method gives a structure such that each middle
layer of a plurality of the divided storage capacitor lower
electrodes is connected to the lower storage capacitor electrode in
the lower layer via a contact hole and the storage capacitor upper
electrode in the upper layer is used as a pixel electrode and,
therefore, a simplification of the manufacturing process and a
reduction of the manufacturing cost have been demanded.
[0019] Furthermore, a liquid display device having a first region
comprising an auxiliary capacitor electrode (storage capacitor
upper electrode) electrically connected to an interconnection
wiring pattern (interconnection electrode) and to a contact hole, a
third region formed at a site not overlapping with the auxiliary
capacitor common wiring pattern (storage capacitor wiring pattern),
and a second region electrically connected to the first region via
that third region (cf. e.g. Japanese Kokai Publication 2001-330850,
page 1). According to this construction, it is possible, when one
of the first and second regions is short-circuited, to function the
other region as a storage capacitor element by destructing and
eliminating the short-circuited region.
[0020] However, the storage capacitor upper electrode formed in the
same step as the data signal line is readily short-circuited with
the data signal line due to a residual layer or the like, and the
method described in Japanese Kokai Publication 2001-330850 cannot
repair the first and second regions simultaneously in case of
short-circuiting of both of them; in this respect, there is room
for contrivance. Furthermore, when the first region of the
auxiliary capacitor electrode, which is a part of the storage
capacitor element, is short-circuited with the data signal line due
to a residual layer, for instance, or when the first region is
short-circuited, between layers, with the auxiliary capacitor
common wiring pattern (storage capacitor wiring pattern) due to a
pinhole or a conductive foreign material, the method described in
Japanese Kokai Publication 2001-330850 requires that cleavage be
made at the cleavage site X1 in the third region (cf. FIG. 1 in
Japanese Kokai Publication 2001-330850) and at the cleavage site X3
of the interconnection wiring pattern (cf. FIG. 1 in Japanese Kokai
Publication 2001-330850) and the connection points Y1 and Y2 (cf.
FIG. 1 in Japanese Kokai Publication 2001-330850) be electrically
connected to connect the interconnection wiring pattern to the
second region via an interconnection electrode for repairing; thus,
it is necessary to carry out laser irradiation at a total of 4
sites. Therefore, there is still room for contrivance for
shortening the time of repairing and the step of repairing.
SUMMARY OF THE INVENTION
[0021] It is an object of the present invention, which has been
made in view of the above-discussed problems, to provide an active
matrix substrate in which faulty connections in storage capacitor
elements as caused by a short circuit between storage capacitor
electrodes due to a conductive foreign material or a pinhole in the
insulating layer or by a short circuit between a data signal line
and a storage capacitor upper electrode can be repaired with ease
and a display device in which such active matrix substrate is
used.
[0022] The present inventors made various investigations in search
of an active matrix substrate in which faulty connections in
storage capacitor elements can be repaired with ease and paid their
attention to the fact that faulty connections are caused by
short-circuiting of both ends of a storage capacitor upper
electrode with a data signal line formed in the same step. And,
they came to realize that when the storage capacitor upper
electrode is divided into at least three, the function of the
storage capacitor element can be maintained, even in the case of
short-circuiting of the divided electrode occurring at both ends
with the data signal line, by electrically separating the
short-circuited divided electrode for effective functioning of the
remaining divided electrode, and they have now completed the
present invention.
[0023] Thus, the present invention provides an active matrix
substrate comprising a thin film transistor disposed at the
crossing point of a scanning signal line with a data signal line on
the substrate, with a gate electrode of the transistor being
connected to the scanning signal line, a source electrode thereof
being connected to a data signal line and a drain electrode thereof
being connected to a pixel electrode, and a storage capacitor upper
electrode disposed so as to oppose a storage capacitor wiring
pattern at least via an insulating layer, wherein the storage
capacitor upper electrode comprises at least three divided
electrodes in the region opposing the storage capacitor wiring
pattern and each divided electrode is connected to the pixel
electrode.
[0024] The invention also provides an active matrix substrate
comprising a thin film transistor disposed at the crossing point of
a scanning signal line with a data signal line on the substrate,
with a gate electrode of the transistor being connected to the
scanning signal line, a source electrode thereof being connected to
the data signal line and a drain electrode thereof being connected
to an interconnection electrode, and a storage capacitor upper
electrode disposed so as to oppose a storage capacitor wiring
pattern at least via an insulating layer and connected to an
interconnection electrode and a pixel electrode, wherein the
storage capacitor upper electrode comprises at least three divided
electrodes in the region opposing the storage capacitor wiring
pattern.
[0025] The invention further provides an active matrix substrate
comprising a thin film transistor disposed at the crossing point of
a scanning signal line and a data signal line on the substrate,
with a gate electrode of the transistor being connected to the
scanning signal line, a source electrode thereof being connected to
the data signal line and a drain electrode thereof being connected
to a pixel electrode, and a storage capacitor upper electrode
disposed so as to oppose the scanning signal line at least via an
insulating layer, wherein the storage capacitor upper electrode
comprises at least three divided electrodes in the region opposing
the scanning signal line and each divided electrode is connected to
the pixel electrode.
[0026] The invention further provides an active matrix substrate
comprising a thin film transistor disposed at crossing point of a
scanning signal line with a data signal line on the substrate, with
a gate electrode of the transistor being connected to the scanning
signal line, a source electrode thereof being connected to the data
signal line and a drain electrode thereof being connected to an
interconnection electrode, and a storage capacitor upper electrode
disposed so as to oppose the scanning signal line at least via a
insulating layer and connected to the interconnection electrode and
a pixel electrode, wherein the storage capacitor upper electrode
comprises at least three divided electrodes in the region opposing
the scanning signal line.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] FIG. 1 is a schematic plan view showing the constitution of
one pixel in an active matrix substrate in a preferred mode of
embodiment of the invention (Cs-on-Common system).
[0028] FIG. 2 is a schematic sectional view showing a section of
the active matrix substrate shown in FIG. 1 as cut along the line
D-D' in FIG. 1.
[0029] FIG. 3 is a schematic plan view showing the constitution of
one pixel in an active matrix substrate in a preferred mode of
embodiment of the invention (Cs-on-Gate system).
[0030] FIG. 4 is a schematic plan view showing the constitution of
one pixel on a conventional active matrix substrate.
[0031] FIG. 5 is a schematic sectional view showing a section of
the active matrix substrate shown in FIG. 4 as cut along the line
A-A' in FIG. 4.
[0032] FIG. 6 is a schematic plan view showing the constitution of
one pixel on the active matrix substrate described in Example
3.
[0033] FIG. 7 is a schematic plan view showing the constitution of
one pixel on the active matrix substrate described in Example
4.
EXPLANATION OF SYMBOLS
[0034] 21: pixel electrode (within the heavy line)
[0035] 22: scanning signal line
[0036] 22': neighboring (next stage) scanning signal line
[0037] 23: data signal line
[0038] 24: thin film transistor (TFT)
[0039] 25: interconnection electrode
[0040] 25a-25g: storage capacitor upper electrode (divided
electrode)
[0041] 26a-26c, 28: contact hole
[0042] 27: storage capacitor (common) wiring pattern (storage
capacitor lower electrode)
[0043] 31: insulating substrate
[0044] 32: gate electrode
[0045] 33: gate insulator
[0046] 34: high resistivity semiconductor layer
[0047] 36a: source electrode
[0048] 36b: drain electrode
[0049] 38: interlayer insulating layer
[0050] 51: pixel electrode (within the heavy line)
[0051] 52: scanning signal line
[0052] 53: data signal line
[0053] 54: thin film transistor (TFT)
[0054] 55: interconnection electrode
[0055] 56: contact hole
[0056] 57: storage capacitor (common) wiring pattern (storage
capacitor lower electrode)
[0057] 61: insulating substrate
[0058] 62: gate electrode
[0059] 63: gate insulator
[0060] 64: high resistivity semiconductor layer
[0061] 66a: source electrode
[0062] 66b: drain electrode
[0063] 68: interlayer insulating layer
[0064] 98: residual layer
[0065] 99: pinhole/conductive foreign material (in gate
insulator).
PREFERRED MODES OF EMBODIMENT
[0066] The active matrix substrate of the invention comprises a
thin film transistor and a storage capacitor upper electrode. Such
a thin film transistor is disposed at crossing point of a scanning
signal line with a data signal line on the substrate, with a gate
electrode thereof is connected to the scanning signal line, a
source electrode thereof is connected to the data signal line and a
drain electrode thereof is connected to a pixel electrode or
interconnection electrode. The thin film transistors can be used as
switches for sampling data signals simultaneously fed to a
plurality of data signal lines by the scanning signals successively
fed to a plurality of scanning lines crossing with the data signal
lines.
[0067] In cases where the drain electrode of a thin film transistor
is (directly) connected to a pixel electrode and the drain
electrode and pixel electrode are disposed in different layers via
an insulating layer, the drain electrode is connected to the pixel
electrode via a contact hole (conductive route for interlayer
conduction). In cases where the drain electrode is connected to an
interconnection electrode, the interconnection electrode and the
pixel electrode are connected to a storage capacitor upper
electrode. In that case, it is desirable that the interconnection
electrode and storage capacitor upper electrode be connected to
each other and at least one of the interconnection electrode and
storage capacitor upper electrode be connected to the pixel
electrode via a contact hole. Namely, the pixel electrode may be
directly connected to the interconnection electrode or directly
connected to the storage capacitor upper electrode provided that it
is electrically connected to the thin film transistor and storage
capacitor upper electrode.
[0068] The storage capacitor upper electrode is disposed in a
manner opposing the storage capacitor wiring pattern at least via
an insulating layer and constitutes a storage capacitor element
with them. As a preferred mode of such a storage capacitor wiring
on a Cs-on-Common system, there may be mentioned the mode
comprising a plurality of storage capacitor (common) wiring
patterns disposed in parallel to the scanning signal lines. Each
storage capacitor element can store a data signal fed to each data
signal line, since the storage capacitor upper electrode is
connected to the relevant thin film transistor via an
interconnection electrode or pixel electrode. The storage capacitor
upper electrodes are generally formed by forming a metal layer or
like conductive layer by sputtering, followed by photolithography
and etching.
[0069] The constitution of the active matrix substrate of the
invention is not particularly restricted provided that it comprises
such constituent elements as mentioned above as essential
constituents. Thus, it may comprise or not comprise another or
other constituent elements.
[0070] In accordance with the invention, a storage capacitor upper
electrode comprises at least three divided electrodes in the region
opposing the storage capacitor wiring pattern. Thus, the storage
capacitor upper electrode is divided into at least three sections
in the region occupied by the pattern of the storage capacitor
wiring pattern. Each of the divided storage capacitor upper
electrode (divided electrode) constitutes a storage capacitor
element as a part of the storage capacitor upper electrode.
Therefore, in the mode of the drain electrode of a thin film
transistor being (directly) connected to a pixel electrode, the
above divided electrodes are respectively connected to the pixel
electrode. In the mode of the drain electrode being connected to an
interconnection electrode, the interconnection electrode is
connected to at least one of the divided electrodes and all the
divided electrodes are connected to a pixel electrode directly via
a contact hole or to the pixel electrode via an interconnection
electrode.
[0071] Such a constitution makes it possible to electrically
separate only divided electrode containing a short-circuited site
and allow the remaining divided electrode(s) to effectively
function to thereby maintain the function of the storage capacitor
element even in the case of short-circuiting of the storage
capacitor upper electrode with the storage capacitor wiring pattern
or with the data signal line formed in one and the same step as a
result of occurrence of a conductive foreign material or a pinhole
in the insulating layer between the storage capacitor wiring
pattern and storage capacitor upper electrode. Generally, both end
portions of a storage capacitor upper electrode are susceptible to
short-circuiting because of there being disposed a data signal
line, among others. Even when the divided electrodes at both ends
are both short-circuited, however, it is now possible to allow the
remaining divided electrode(s) to function effectively and thereby
maintain the function of the storage capacitor element, since the
storage capacitor upper electrode is divided into at least three
sections in accordance with the present invention. By using such an
active matrix substrate as the pixel electrode substrate of a
liquid crystal display device or the like, it become possible to
effectively prevent dot defects in images displayed from occurring
due to storage capacitor upper electrode short-circuiting, prevent
the display quality of the display device from deteriorating, and
improve the yield. Thus, it can be adequately used in providing a
liquid crystal panel for a large-size liquid crystal television or
the like which is required to have a high level of panel
quality.
[0072] The shape or shapes and the manner of disposition of the
above divided electrodes are not particularly restricted but there
may be mentioned, among others, the mode in which three or more
square or rectangular divided electrodes are juxtaposed with one
another and the mode in which two or more square or rectangular
divided electrodes are juxtaposed with each other or one another in
one frame-shaped divided electrode.
[0073] In the practice of the invention, the storage capacitor
upper electrode may be disposed so as to oppose a scanning signal
line at least via a insulating layer (gate insulator) and comprise
at least three divided electrodes in the region opposing the
scanning signal line. In such Cs-on-Gate system in which the
scanning signal line is used as the storage capacitor lower
electrode in the storage capacitor element, too, the effects of the
invention can be produced in the same manner as in the Cs-on-Common
system in which a storage capacitor wiring pattern is disposed as
the storage capacitor lower electrode.
[0074] Preferred embodiments of the active matrix substrate of the
invention are described below.
[0075] When interconnection electrodes are disposed in the practice
of the invention, the active matrix substrate is preferably one
such that interconnection electrode is connected to each of the
divided electrodes and, in case of short-circuiting of one of the
divided electrodes, the interconnection electrode connected to the
short-circuited divided electrode become separated and that divided
electrode become electrically separated from the other divided
electrodes. In accordance with the invention, any short-circuited
divided electrode can be electrically separated with ease according
to need, for example in the case of short-circuiting of the divided
electrode, by partly destructing and separating the interconnection
electrode in question by means of a laser or the like. In the
practice of the invention, when there is no interconnection
electrode disposed, the above-mentioned active matrix substrate is
preferably one such that the divided electrodes are respectively
connected to a pixel electrode via a contact hole and, in the case
of short-circuiting of one divided electrode, the divided electrode
is separated form the pixel electrode and the divided electrode is
thereby electrically separated from the other divided electrodes.
When such an active matrix substrate is used as the pixel electrode
substrate of a display device, dot defects due to short-circuiting
are repaired in a state close to normal pixels.
[0076] In the practice of the invention, each interconnection
electrode preferably has at least two routes. As typical modes of
such an interconnection electrode, there may be mentioned (1) the
mode in which one interconnection electrode connected to a thin
film transistor ramifies into two or more branches to be connected
to a storage capacitor upper electrode, (2) the mode in which two
or more interconnection electrodes connected to a thin film
transistor are combined into one to be connected to a storage
capacitor upper electrode, and (3) the mode in which two or more
interconnection electrodes connected to a thin film transistor are
connected, with or without cross linking, to a storage capacitor
upper electrode. Among them, the mode (3) is preferred. When the
interconnection electrode is given such a form, the data signal
from a thin film transistor is sent to the relevant storage
capacitor upper electrode via two or more routes and, therefore,
the possibility of the thin film transistor and storage capacitor
upper electrode being insulated from each other due to partial
disconnection of the interconnection electrode can be reduced. When
such an active matrix substrate is used as the pixel electrode
substrate of a display device such as a liquid crystal display
device, the occurrence of dot defects in displayed images as
resulting from disconnection of interconnection electrodes can be
effectively prevented, the display quality of the display device
can be prevented from deteriorating, and the yield can be
improved.
[0077] In cases where interconnection electrodes are disposed in
the practice of the invention, each storage capacitor upper
electrode is preferably connected to a pixel electrode via at least
one contact hole disposed on at least one of the divided
electrodes. When an active matrix substrate is used in a liquid
crystal display device or the like, either of the sites of contact
hole formation or the sites of storage capacitor upper electrode
formation are difficult to utilize as aperture sites. By disposing
these on the same sites on the substrate, it becomes possible to
increase the aperture ratio. The contact hole is not particularly
restricted provided that it can electrically connect the divided
electrodes to the relevant pixel electrode. When the divided
electrodes and pixel electrode are disposed via an insulating
layer, it may be a conductive material, such as a metal, formed on
the inside wall of a through hole penetrating the insulating layer
or a conductive material filled within the through hole, for
instance.
[0078] When interconnection electrodes are disposed in the practice
of the invention, the divided electrode or electrodes to be
equipped with the above-mentioned contact hole may be adequately
selected according to the distance between the data signal line and
divided electrode(s), and the shape and manner of disposition of
the divided electrode(s). As preferred modes of the contact hole,
there may be mentioned, among others, (1) the mode in which it is
disposed on at least one of the divided electrodes occurring
(located) at both ends, (2) the mode in which it is disposed on at
least one of the divided electrodes other than the divided
electrodes occurring at both ends, and (3) the mode in which it is
disposed at least on each of the divided electrodes occurring at
both ends. In many cases, the divided electrodes occurring at both
ends are close to the relevant data signal line, hence are
susceptible to short-circuiting with the data signal line. When a
divided electrode on which no contact hole is disposed is
short-circuited with the data signal line, however, it is not
necessary to eliminate the pixel electrode on the contact hole but
it is possible to electrically separate the short-circuited divided
electrode from the other divided electrodes with ease by
destructing and separating a part of the interconnection electrode
by means of a laser, for instance and, thus, the short circuit
between the data signal line and the drain electrode of the thin
film transistor can be repaired. On the contrary, when a divided
electrode on which a contact hole is disposed is short-circuited
with the data signal line, repairs may become difficult to carry
out in some instances; it becomes necessary to repair the short
circuit between the data signal line and the pixel electrode on the
contact hole, for example, by eliminating the pixel electrode on
the contact hole.
[0079] In the above-mentioned mode (1), one (the other) of the
divided electrodes occurring at both ends is not equipped with a
contact hole and, accordingly, the possibility of short-circuiting
of the divided electrode, on which a contact hole is formed, with
the data signal line can be reduced. In the above-mentioned mode
(2), either of both the divided electrodes occurring at both ends
is not equipped with a contact hole and, accordingly, the
possibility of short-circuiting of the divided electrode, on which
a contact hole is formed, with the data signal line can be more
effectively reduced. On the contrary, in the above-mentioned mode
(3), the number of contact holes can be increased and the
reliability of connection between the storage capacitor upper
electrode and pixel electrode can be increased, when the distance
between the data signal line and divided electrodes occurring at
both ends is great, for instance, the mode (3) is preferred.
[0080] As for the storage capacitor upper electrode mentioned
above, the divided electrodes occurring at both ends of the storage
capacitor upper electrode are preferably smaller in the total area
of the region opposing the storage capacitor wiring pattern or
scanning signal line as compared with the other divided electrode
or electrodes. In this case, when there are two or more other
divided electrodes, the sum of the areas overlapping between their
electrodes and the storage capacitor wiring pattern or scanning
signal line is used in comparing with the sum of the areas
overlapping between the divided electrodes occurring at both ends
and the storage capacitor wiring pattern or scanning signal line.
In this mode, the divided electrodes occurring at both ends where
short-circuiting with the data signal line tends to occur are made
small, so that even if these divided electrodes are electrically
separated as a result of short circuit repair, the decrease in the
capacity of the storage capacitor element can be reduced. Further,
when the divided electrodes not occurring at either end are the
same in size, it is also possible to increase the distance between
the divided electrodes occurring at both ends and the data signal
line to thereby prevent the short-circuiting of the divided
electrodes occurring at both ends.
[0081] Further, when interconnection electrodes are provided in the
practice of the invention, the storage capacitor upper electrode is
preferably such that the divided electrode provided with a contact
hole is small in area. This makes it possible to reduce the
possibility of short-circuiting between the divided electrode
provided with a contact hole and the storage capacitor wiring
pattern or scanning signal line. More preferably, the storage
capacitor upper electrode consists of at least three divided
electrodes in the region opposing the storage capacitor wiring
pattern or scanning signal line and is connected to a pixel
electrode via at least one contact hole disposed on the divided
electrode not occurring at either end and the divided electrode
provided with the contact hole is smaller in the area of the region
opposing the storage capacitor wiring pattern or scanning signal
line as compared with the divided electrode(s) occurring at both
ends. In this case, the comparison is made between the divided
electrode smallest in the area of the region opposing the storage
capacitor wiring pattern or scanning signal line out of the divided
electrodes occurring at both ends and the divided electrode
greatest in the area of the region opposing the storage capacitor
wiring pattern or scanning signal line out of the divided
electrodes equipped with a contact hole (if there are two or more
such divided electrodes). In this mode, the area of the divided
electrode provided with a contact hole is made small and neither of
the divided electrodes occurring at both ends is provided with a
contact hole, so that the possibility of short-circuiting of the
divided electrode, on which a contact hole is formed, with the
storage capacitor wiring pattern or scanning signal line and with
the data signal line is reduced. Still more preferably, the storage
capacitor upper electrode has a form such that it comprises three
or more divided electrodes in the region opposing the storage
capacitor wiring pattern or scanning signal line and is connected
to a pixel electrode via one or more contact holes disposed on the
divided electrode or electrodes not occurring at either end and the
divided electrode or electrodes other than the divided electrodes
occurring at both ends are smaller in the area of the region
opposing the storage capacitor wiring pattern or scanning signal
line than the divided electrodes occurring at both ends. In this
case, the area comparison is made between the divided electrode
smaller in the area of the region opposing the storage capacitor
wiring pattern or scanning signal line out of the divided
electrodes occurring at both ends and the divided electrode
greatest in the area of the region opposing the storage capacitor
wiring pattern or scanning signal line out of the divided
electrodes not occurring at either end (if there are two or more
such divided electrodes).
[0082] The present invention further relates to a display device
equipped with the above-mentioned active matrix substrate. In such
display device, the above active matrix substrate is used as a
pixel electrode substrate and, therefore, the occurrence of dot
defects in images displayed as caused by short-circuiting of the
storage capacitor upper electrode is effectively suppressed, the
display quality is prevented from deteriorating, and a high
manufacturing yield can be attained. The above display device is
preferably a liquid crystal display device, among others.
[0083] The active matrix substrate of the invention has the
constitution described above and each storage capacitor upper
electrode comprises three or more divided electrodes in the region
opposing the storage capacitor wiring pattern or scanning signal
line and, therefore, even when the storage capacitor upper
electrode is short-circuited with the storage capacitor wiring
pattern or scanning signal line due to a conductive foreign
material or a pinhole in the insulating layer or with the data
signal line formed in the same step, it is possible to electrically
separate only the divided electrode containing the short circuit
site to allow the remaining divided electrodes to function
effectively and thereby maintain the function of the storage
capacitor element. Generally, both end portions of a storage
capacitor upper electrode are susceptible to short-circuiting
because of there being disposed a data signal line, among others.
Even when both divided electrodes at both ends are short-circuited,
it is now possible to allow the remaining divided electrode or
electrodes to function effectively and thereby maintain the
function of the storage capacitor element. When such active matrix
substrate is used as a pixel-electrode-disposed substrate in a
display device such as a liquid crystal display device, the
appearance of dot defects in images displayed as caused by
short-circuiting of the storage capacitor upper electrode can be
effectively suppressed, the display quality of the display device
can be prevented from deteriorating, and the yield can be improved.
Thus, the active matrix substrate can be adequately used in a
liquid crystal panel, such as a large-size liquid crystal
television, of which a high level of panel quality is required.
[0084] In the following, some typical examples are given and the
present invention is described in further detail, referring to the
drawings. These examples are, however, by no means limitative of
the scope of the invention.
EXAMPLE 1
[0085] In Example 1, referring to FIG. 1 and FIG. 2, a mode of
practice using the Cs-on-Common system in which a storage capacitor
(common) wiring pattern is formed as the storage capacitor lower
electrode is described.
[0086] FIG. 1 is a schematic plan view illustrating the
constitution of one pixel in an active matrix substrate in a
preferred mode of embodiment of the invention, and FIG. 2 is a
schematic sectional view showing a section of the active matrix
substrate shown in FIG. 1 as cut along the line D-D'.
[0087] Referring to FIG. 1, in the active matrix substrate, a
plurality of pixel electrodes 21 is disposed to form a matrix.
Around each of these pixel electrodes 21, there are disposed, in a
manner crossing with each other, each scanning signal line 22 for
scanning signal feeding, and a data signal line 23 for data signal
feeding. At the crossing point of the scanning signal line 22 and
data signal line 23, there is disposed a TFT 24 as a switching
element to be connected to the pixel electrode 21. The scanning
signal line 22 is connected to the gate electrode 32 of this TFT
24, and the TFT 24 is driven and controlled by a scanning signal
inputted into the gate electrode 32. The data signal line 23 is
connected to the source electrode 36a of the TFT 24, and a data
signal is inputted into the source electrode 36a of the TFT 24.
Further, to the drain electrode 36b, there are connected an
interconnection electrode 25, one electrode of a storage capacitor
element (storage capacitor upper electrode) comprising three
divided electrodes 25a, 25b and 25c via the interconnection
electrode 25, and the pixel electrode 21 via the interconnection
electrode 25 and a contact hole 26a. A storage capacitor (common)
wiring pattern 27 functions as the other electrode of the storage
capacitor element (storage capacitor lower electrode).
[0088] Referring to FIG. 2, the gate electrode 32 connected to the
scanning signal line 22 is disposed on a transparent insulating
substrate (insulating substrate) made of a glass, plastic or like
material. The scanning signal line 22 and gate electrode 32 are
each formed of a layer of a metal such as titanium, chromium,
aluminum or molybdenum or an alloy thereof or a laminate thereof. A
storage capacitor (common) wiring pattern 27 constituting the other
electrode of the storage capacitor element (storage capacitor lower
electrode) is made of the same material as the scanning signal line
22 and/or gate electrode 32. A gate insulator 33 is formed on the
scanning signal line 22, gate electrode 32 and storage capacitor
(common) wiring pattern 27 to cover these. The gate insulator 33 is
formed of an insulating layer, such as a silicon nitride or silicon
oxide layer. Thereon is disposed a high-resistivity semiconductor
layer 34 made of amorphous silicon or polysilicon, for instance, in
a manner overlapping with the gate electrode 32. Further thereon is
disposed a lower-resistivity semiconductor layer made of an
impurity-doped n+ amorphous silicon to give the source electrode
36a and drain electrode 36b. The data signal line 23 is formed so
as to be connected to the source electrode 36a. The interconnection
electrode 25 is disposed so as to be connected to the drain
electrode 36b, and the interconnection electrode 25 is extended to
constitute the storage capacitor upper electrode, which serve as
one electrode of the storage capacitor element and comprise three
divided electrodes 25a, 25b and 25c, and is connected to the pixel
electrode 21 via the contact hole 26a. The data signal line 23,
interconnection electrode 25, and the storage capacitor upper
electrode comprising three divided electrodes 25a, 25b and 25c are
formed of the same material utilizing a layer of a metal such as
titanium, chromium, aluminum or molybdenum or an alloy thereof, or
a laminate thereof The pixel electrode 21 is formed of a conductive
layer having transparency, such as an ITO, IZO, zinc oxide or tin
oxide layer. The contact hole 26a is formed so as to penetrate an
interlayer insulation layer 38 formed to cover the top surface each
of the TFT 24, scanning signal line 22, data signal line 23 and
interconnection electrode 25. As the material of the interlayer
insulation layer 38, there may be mentioned, for example, acrylic
resins, silicon nitride, and silicon oxide.
[0089] One electrode of the storage capacitor element (storage
capacitor upper electrode) is divided into three electrodes 25a,
25b and 25c in the region opposing the storage capacitor (common)
wiring pattern 27, namely in the region where the electrode
overlaps with the storage capacitor wiring pattern 27 to form the
storage capacitor element.
[0090] The interconnection electrode 25 is connected to the divided
electrodes 25a, 25b and 25c, respectively so that, in case of
short-circuiting of any of the divided electrodes 25a, 25b and 25c,
the short-circuited divided electrode alone can be electrically
separated from the drain electrode 36b of the TFT 24. When a short
circuit is formed due to a residual layer 98, for instance, the
interconnection electrode 25 is destructed for separation at the
cleavage site K by means of a laser, for instance, whereby the
short-circuited divided electrode can be readily separated from the
drain electrode 36b.
[0091] The contact hole 26a is formed on the site other than the
divided electrodes 25a and 25c, which are close to the data signal
line 23, namely only on the divided electrode 25b. The divided
electrodes 25a and 25c are close to the data signal line 23 formed
in the same step and, therefore, are susceptible to
short-circuiting with the data signal line 23 due to a residual
layer 98 or the like as compared with the divided electrode 25b.
Therefore, if contact holes are disposed on the divided electrodes
25a and 25c and the divided electrodes 25a or 25c is
short-circuited, not only the short-circuited divided electrodes
25a or 25c is to be separated from the drain electrode 36b by
destruction and separation at the cleavage site K on the
interconnection electrode 25 by means of a laser, for instance but
also the pixel electrode 21 on the contact hole located on the
short-circuited divided electrodes 25a or 25c is destructed and
separated. Thus, a step of separating the pixel electrode 21 from
the short-circuited divided electrode 25a or 25c becomes newly
necessary. Therefore, the contact hole 26a is disposed on the
divided electrode 25b, not on the divided electrodes 25a or 25c
susceptible to short-circuiting, to facilitate repairing in case of
short-circuiting.
[0092] In cases where the reliability of contacting is doubtful due
to such problems as difficulty in connecting a layer of ITO or the
like to serve as the pixel electrode 21 in the contact hole 26a
with good coverage and a great difference in contact resistance
between the metal layer made of aluminum, for instance, to serve as
the storage capacitor electrode and the layer of ITO, for instance,
to serve as the pixel electrode, the divided electrode(s) 25a
and/or 25c may also be provided with a contact hole.
[0093] The area of overlapping between the divided electrode 25b,
on which the contact hole 26a is disposed, and the storage
capacitor (common) wiring pattern 27 is smaller than the areas of
overlapping between the other divided electrodes 25a and 25c and
the storage capacitor (common) wiring pattern 27. Such a structure
makes it possible to reduce the possibility of short-circuiting
between the divided electrode 25b and the storage capacitor
(common) wiring pattern 27 via the gate insulator 33 due to the
occurrence of a conductive foreign material or a pinhole 99, since
the area of overlapping between the divided electrode 25b and the
storage capacitor (common) wiring pattern 27 is small as compared
with the areas of overlapping between the other divided electrodes
25a and 25c, which are close to the data signal line 23, and the
storage capacitor (common) wiring pattern 27.
[0094] In the following, some examples of modification of Example 1
shown in FIG. 1 and FIG. 2 are further described.
[0095] In Example 1, the divided electrodes 25a, 25b and 25c are
quadrilateral in shape, as shown in FIG. 1. The shape is not
limited thereto but includes triangular, semicircular and
trapezoidal shapes and others. Thus, it is only necessary to
dispose the storage capacitor upper electrodes on the gate
insulator 33 in a manner overlapping with the storage capacitor
(common) wiring pattern 27 so that at least the divided electrodes
close to the data signal line 23 may be separated from the other
divided electrode or electrodes. The storage capacitor upper
electrode shown in FIG. 1 consists of three divided electrodes 25a,
25b and 25c. The number of divisions (N) is not limited to 3 but
may be four or more, i.e. N.gtoreq.3.
[0096] According to the above description, the storage capacitor
(common) wiring pattern 27 is fonned of the same material as the
scanning signal line 22 and gate electrode 32. The material to be
used is not limited thereto. Thus, the storage capacitor (common)
wiring pattern 27 may be formed using another material (e.g. an ITO
or like transparent conductive material) before/after formation of
the scanning signal line 22 and/or gate electrode 32.
[0097] In Example 1, the interconnection electrode 25 is formed in
the wiring pattern shown in FIG. 1. The wiring pattern is not
limited thereto, however. Thus, it is only necessary that a part of
the interconnection electrode 25 connected to the drain electrode
36b be connected to the divided electrodes 25a, 25b and 25c,
respectively so that, in case of short-circuiting of any of the
divided electrodes 25a, 25b and 25c, the short-circuited divided
electrode alone can be electrically separated from the drain
electrode 36b of the TFT 24.
[0098] As for the insulating layer constituting the storage
capacitor element, the gate insulator 33 alone is shown in FIG. 2
but this has no limitative meaning. Thus, a further insulation
layer other than the gate insulating layer 33 may be formed on the
storage capacitor (common) wiring pattern 27 before/after formation
of the gate insulator 33.
EXAMPLE 2
[0099] In Example 2, referring to FIG. 3, a mode of practice using
the Cs-on-Gate system in which no storage capacitor (common) wiring
pattern is disposed but a neighboring scanning signal line is
utilized as the storage capacitor lower electrode is described.
[0100] FIG. 3 is a schematic plan view illustrating the
constitution of one pixel in an active matrix substrate in a
preferred mode of embodiment of the invention.
[0101] Referring to FIG. 3, in the active matrix substrate, a
plurality of pixel electrodes 21 is disposed to form a matrix.
Around each of these pixel electrodes, there are disposed, in a
manner crossing with each other, a scanning signal line 22 for
scanning signal feeding, and a data signal line 23 for data signal
feeding. At the crossing point of the scanning signal line 22 and
data signal line 23, there is disposed a TFT 24 as a switching
element to be connected to the pixel electrode 21. The scanning
signal line 22 is connected to the gate electrode of this TFT 24,
and the TFT 24 is driven and controlled by a scanning signal
inputted into the gate electrode. The data signal line 23 is
connected to the source electrode of the TFT 24, and a data signal
is inputted into the source electrode of the TFT 24. Further, to
the drain electrode, there are connected an interconnection
electrode 25, one electrode of a storage capacitor element (storage
capacitor upper electrode) comprising four divided electrodes 25d,
25e, 25f and 25g via the interconnection electrode 25, and the
pixel electrode 21 via the interconnection electrode 25 and contact
holes 26b and 26c. A neighboring scanning signal line 22' is
utilized as the other electrode of the storage capacitor element
(storage capacitor lower electrode).
[0102] One electrode of the storage capacitor element (storage
capacitor upper electrode) is divided into four divided electrodes
25d, 25e, 25f and 25g in the region opposing the neighboring
scanning signal line 22', namely in the region overlapping with the
pattern of the neighboring scanning signal line 22' and forming the
storage capacitor element.
[0103] The interconnection electrode 25 is connected to the divided
electrodes 25d, 25e, 25f and 25g, respectively so that, in case of
short-circuiting of any of the divided electrodes 25d, 25e, 25f and
25g, the short-circuited divided electrode alone can be
electrically separated from the drain electrode of the TFT 24. When
a short circuit is formed due to a residual layer, for instance,
the interconnection electrode 25 is destructed for separation at
the cleavage site K by means of a laser, for instance, whereby the
short-circuited divided electrode can be readily separated from the
drain electrode.
[0104] The contact holes 26b and 26c are formed on the sites other
than the divided electrodes 25d and 25g, which are close to the
data signal line 23, namely only on the divided electrodes 25e and
25f.
[0105] The divided electrodes 25d and 25g are close to the data
signal line 23 formed in the same step and, therefore, are
susceptible to short-circuiting with the data signal line 23 due to
a residual layer, any conductive foreign material or the like as
compared with the divided electrodes 25e and 25f. Therefore, if
contact holes are disposed on the divided electrodes 25d and 25g
and the divided electrode 25d or 25g is short-circuited, not only
the short-circuited divided electrode 25d or 25g is to be separated
from the drain electrode of the TFT 24 by destruction and
separation at the cleavage site K on the interconnection electrode
25 by a laser, for instance but also the contact hole located on
the short-circuited divided electrode 25d or 25g is destructed and
separated. Thus, a step of separating that divided electrode also
from the pixel electrode 21 becomes newly necessary. Therefore, the
contact holes 26b and 26c are disposed on the divided electrodes
25e and 25f, not on the divided electrodes 25d or 25g susceptible
to short-circuiting, to facilitate repairing in case of
short-circuiting.
[0106] In cases where the reliability of contacting is doubtful due
to such problems as difficulty in forming a layer of ITO or the
like to serve as the pixel electrode 21 in the contact holes 26b
and 26c with good coverage and a great difference in contact
resistance between the metal layer made of aluminum, for instance,
to serve as the storage capacitor upper electrode and the layer of
ITO, for instance, to serve as the pixel electrode, the divided
electrode(s) 25d and/or 25g may also be provided with a contact
hole.
[0107] The areas of overlapping between the divided electrodes 25e
and 25f, on which the contact holes 26b and 26c are disposed, and
the neighboring scanning signal line 22' are smaller than the areas
of overlapping between the other divided electrodes 25d and 25g and
the neighboring scanning signal line 22'. Such a structure makes it
possible to reduce the possibility of short-circuiting between the
divided electrodes 25e and 25f and the neighboring scanning signal
line 22' via an insulating layer constituting the storage capacitor
element due to the occurrence of a conductive foreign material or a
pinhole, since the areas of overlapping between the divided
electrodes 25e and 25f and the neighboring scanning signal line 22'
are small as compared with the areas of overlapping between the
other divided electrodes 25d and 25g and the neighboring scanning
signal line 22'.
[0108] In the following, some examples of modification of Example 2
shown in FIG. 3 are further described.
[0109] In Example 2, the divided electrodes 25d, 25e, 25f and 25g
are quadrilateral in shape, as shown in FIG. 3. The shape is not
limited thereto but includes triangular, semi-circular and
trapezoidal shapes and others. Thus, it is only necessary to
dispose the storage capacitor upper electrodes on the insulating
layer of the storage capacitor element in a manner overlapping with
the pattern of the neighboring scanning signal line 22' so that at
least the divided electrodes close to the data signal line 23 may
be separated from the other divided electrode or electrodes. The
storage capacitor upper electrode shown in FIG. 3 consists of four
divided electrodes 25d, 25e, 25f and 25g. The number of divisions
(N) is not limited to 4 but the necessary condition is that
N.gtoreq.3.
[0110] In Example 2, the interconnection electrode 25 is formed in
the wiring pattern shown in FIG. 3. The wiring pattern is not
limited thereto, however. Thus, it is only necessary that a part of
the interconnection electrode 25 connected to the drain electrode
be connected to the divided electrodes 25d, 25e, 25f and 25g,
respectively so that, in case of short-circuiting of any of the
divided electrodes 25d, 25e, 25f and 25g, the short-circuited
divided electrode alone can be electrically separated from the
drain electrode of the TFT 24.
EXAMPLE 3
[0111] In Example 3, referring to FIG. 6, a mode of practice using
the Cs-on-Common system in which a drain electrode is connected to
a storage capacitor upper electrode via an interconnection wiring
pattern is described.
[0112] FIG. 6 is a schematic plan view illustrating the
constitution of one pixel on in active matrix substrate in a
preferred mode of embodiment of the invention.
[0113] Referring to FIG. 6, in the active matrix substrate, a
plurality of pixel electrodes 21 is disposed to form a matrix.
Around each of these pixel electrodes 21, there are disposed, in a
manner crossing with each other, a scanning signal line 22 for
scanning signal feeding, and a data signal line 23 for data signal
feeding. At the crossing point of the scanning signal line 22 and
data signal line 23, there is disposed a TFT 24 as a switching
element to be connected to the pixel electrode 21. The scanning
signal line 22 is connected to the gate electrode of this TFT 24,
and the TFT 24 is driven and controlled by a scanning signal
inputted into the gate electrode. The data signal line 23 is
connected to the source electrode of the TFT 24, and a data signal
is inputted into the source electrode of the TFT 24. Further, to
the drain electrode, there are connected an interconnection
electrode 25, one electrode of a storage capacitor element (storage
capacitor upper electrode) 25b via the interconnection electrode
25, and the pixel electrode 21 via the interconnection electrode 25
and a contact hole 26b.
[0114] One electrode of the storage capacitor element (storage
capacitor upper electrode) is divided into three divided electrodes
25a, 25b and 25c in the region opposing a storage capacitor wiring
pattern 27, namely in the region of overlapping of the electrode
with the storage capacitor wiring pattern 27 to form the storage
capacitor element. This constitution makes it possible, in case of
short-circuiting of at least one of the divided electrodes 25a and
25c at both ends, which are close to the data signal line, to
separate the short-circuited divided electrode 25a and/or 25c from
the pixel electrode 21 by means of a laser or the like (namely
eliminate the pixel electrode on and around the contact hole 26a
and/or 26c) to thereby allow the remaining divided electrode(s) to
function effectively and thus maintain the function of the storage
capacitor element.
[0115] The interconnection electrode 25 is connected only to the
middle divided electrode 25b, which does not neighbor the data
signal line 23, among the three divided electrodes 25a, 25b and
25c. The divided electrodes 25a and 25c neighboring the data signal
line 23 are connected to the pixel electrode 21 via the contact
holes 26a and 26c, respectively, and further connected to the drain
electrode of the thin film transistor 24 via the pixel electrode
21. The divided electrodes 25a, 25b and 25c, together with the
storage capacitor wiring pattern 27, constitute the storage
capacitor element.
[0116] In this example, the interconnection electrode 25 is not
connected to all the divided electrodes 25a, 25b and 25c but only
to one divided electrode 25b, and the number of lines and routes of
the interconnection electrode 25 can thereby be reduced. Therefore,
the area of the interconnection electrode 25, which becomes a
light-shielding area, can be reduced and, thus, the aperture ratio
can be prevented from lowering. When the divided electrodes 25a and
25c are connected only to the pixel electrode 21 via the contact
holes 26a and 26c but are not connected to the interconnection
electrode 25, as in this example, it is not necessary, in case of
short-circuiting of the divided electrodes 25a or/and 25c with the
data signal line 23 or interlayer-short-circuiting thereof with the
storage capacitor wiring pattern 27, to electrically separate the
interconnection electrode 25 from the divided electrodes 25a or/and
25c on the occasion of repairing, hence the addition of a new step
can be avoided.
[0117] In the following, some examples of modification of Example 3
are further described.
[0118] In this example, the interconnection electrode 25 is
connected to the middle divided electrode 25b among the three
divided electrodes 25a, 25b and 25c. This has no limitative
meaning, however. Thus, when contact holes 26a, 26b and 26c are
disposed on the respective divided electrodes 25a, 25b and 25c and
the all divided electrodes 25a, 25b and 25c are connected to the
pixel electrode 21 via the contact holes 26a, 26b and 26c and the
interconnection electrode 25 is connected to at least one of the
divided electrodes 25a, 25b and 25c, all the divided electrodes
25a, 25b and 25c can be connected to the drain electrode of the
thin film transistor 24.
[0119] In this example, too, the shape of the divided electrodes
25a, 25b and 25c, the number of divided electrodes, and the pattern
of the interconnection electrode 25 are not particularly restricted
to those described, like in Example 1.
EXAMPLE 4
[0120] In Example 4, referring to FIG. 7, a mode of practice using
the Cs-on-Common system in which a drain electrode is connected to
a pixel electrode directly via a contact hole without passing
through any interconnection electrode.
[0121] FIG. 7 is a schematic plan view illustrating the
constitution of one pixel in an active matrix substrate in a
preferred mode of embodiment of the invention.
[0122] Referring to FIG. 7, in the active matrix substrate, a
plurality of pixel electrodes 21 is disposed to form a matrix.
Around each of these pixel electrodes 21, there are disposed, in a
manner crossing with each other, a scanning signal line 22 for
scanning signal feeding, and a data signal line 23 for data signal
feeding. At the crossing point of the scanning signal line 22 and
data signal line 23, there is disposed a TFT 24 as a switching
element to be connected to the pixel electrode 21. The scanning
signal line 22 is connected to the gate electrode of this TFT 24,
and the TFT 24 is driven and controlled by a scanning signal
inputted into the gate electrode. The data signal line 23 is
connected to the source electrode of the TFT 24, and a data signal
is inputted into the source electrode of the TFT 24. Further, to
the drain electrode, there is connected the pixel electrode 21 via
a contact hole 28. One electrode of a storage capacitor element
(storage capacitor upper electrode) comprising divided electrodes
25a, 25b and 25c is connected to the pixel electrode 21 via contact
holes 26a, 26b and 26c, and constitutes, together with a storage
capacitor wiring pattern 27, the storage capacitor element. Thus,
there is no interconnection electrode disposed, and the drain
electrode of the TFT 24 is connected to the storage capacitor upper
electrode comprising divided electrodes 25a, 25b and 25c via the
contact holes 26a, 26b and 26c formed on the respective divided
electrodes 25a, 25b and 25c, the pixel electrode 21 and the contact
hole 28.
[0123] One electrode of the storage capacitor element (storage
capacitor upper electrode) is divided into three divided electrodes
25a, 25b and 25c in the region opposing a storage capacitor wiring
pattern 27, namely in the region of overlapping of the electrode
with the storage capacitor wiring pattern 27 to form the storage
capacitor element. This constitution makes it possible, even in
case of short-circuiting of one or two of the divided electrodes,
to separate the short-circuited divided electrode(s) from the pixel
electrode 21 by means of a laser, for instance, to thereby allow
the remaining divided electrode(s) to function effectively and thus
maintain the function of the storage capacitor element. Further,
this constitution in which no interconnection electrode is present
makes it possible to prevent the aperture ratio from decreasing due
to the occurrence of an interconnection electrode as compared with
the constitution in which the drain electrode and storage capacitor
wiring pattern are connected to each other via an interconnection
electrode.
[0124] In this example, too, the shapes of the divided electrodes
25a, 25b and 25c, or the number of divided electrodes is not
particularly restricted, like in Example 1.
* * * * *