U.S. patent application number 12/654608 was filed with the patent office on 2011-01-27 for liquid crystal display and fabricating method thereof.
Invention is credited to Youngju Koh, Mungi Park.
Application Number | 20110019144 12/654608 |
Document ID | / |
Family ID | 43497038 |
Filed Date | 2011-01-27 |
United States Patent
Application |
20110019144 |
Kind Code |
A1 |
Koh; Youngju ; et
al. |
January 27, 2011 |
Liquid crystal display and fabricating method thereof
Abstract
A liquid crystal display (LCD) includes: a gate line formed as a
first conductive pattern; a common line formed as the first
conductive pattern; a data line insulatedly crossing the gate line
and the common line, and formed as a second conductive pattern; a
thin film transistor (TFT) formed at a crossing of the gate line
and the data line; a common electrode formed as a third conductive
pattern, and connected with the common line; and a pixel electrode
connected with the TFT and formed as the third conductive pattern
to form a horizontal field together with the common electrode,
wherein the third conductive pattern is formed as a dual-layer
comprising a metal film and a low reflection film formed on the
metal film.
Inventors: |
Koh; Youngju; (Paju-si,
KR) ; Park; Mungi; (Ansan-si, KR) |
Correspondence
Address: |
MCKENNA LONG & ALDRIDGE LLP
1900 K STREET, NW
WASHINGTON
DC
20006
US
|
Family ID: |
43497038 |
Appl. No.: |
12/654608 |
Filed: |
December 24, 2009 |
Current U.S.
Class: |
349/143 ;
257/E21.158; 438/30 |
Current CPC
Class: |
G02F 1/13629 20210101;
H01L 27/124 20130101; G02F 2201/38 20130101; G02F 1/13439 20130101;
G02F 1/134363 20130101 |
Class at
Publication: |
349/143 ; 438/30;
257/E21.158 |
International
Class: |
G02F 1/1343 20060101
G02F001/1343; H01L 21/28 20060101 H01L021/28 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 23, 2009 |
KR |
10-2009-0067442 |
Claims
1. A liquid crystal display (LCD) device comprising: a gate line
formed as a first conductive pattern; a common line separated from
the gate line and formed as the first conductive pattern; a data
line insulatedly crossing the gate line and the common line to
define a pixel area, and formed as a second conductive pattern; a
thin film transistor (TFT) formed at a crossing of the gate line
and the data line; a common electrode formed as a third conductive
pattern at the pixel area, and connected with the common line; and
a pixel electrode connected with the TFT and formed as the third
conductive pattern to form a horizontal field together with the
common electrode in the pixel area, wherein the third conductive
pattern is formed as a dual-layer comprising a metal film and a low
reflection film formed on the metal film.
2. The device of claim 1, wherein the low reflection film contains
a nitride material or an oxide material.
3. The device of claim 2, wherein the low reflection film comprises
at least one of CuNx, MoTiNx, ITO, IZO, TO, and CrOx.
4. The device of claim 1, wherein the low reflection film has a
thickness of 30 .ANG. to 1000 .ANG..
5. The device of claim 1, further comprising: a gate pad comprising
a gate pad lower electrode connected with the gate line and a gate
pad upper electrode being in contact with the gate pad lower
electrode via a contact hole; a data pad comprising a data pad
lower electrode connected with the data line and a data pad upper
electrode being in contact with the data pad lower electrode via a
contact hole; and a common pad comprising a common pad lower
electrode connected with the common line and a common pad upper
electrode being in contact with the common pad lower electrode via
a contact hole, wherein the gate pad upper electrode, the data pad
upper electrode, and the common pad upper electrode are formed as
the third conductive pattern.
6. A liquid crystal display (LCD) comprising: a gate line formed as
a first conductive pattern; a common line separated from the gate
line and formed as the first conductive pattern; a data line
insulatedly crossing the gate line to define a pixel area, and
formed as a second conductive pattern; a thin film transistor (TFT)
formed at a crossing of the gate line and the data line; a common
electrode connected with the common line and formed as a third
conductive pattern; and a pixel electrode connected with the TFT
and formed as the third conductive pattern to form a field together
with the common electrode at the pixel area, wherein the third
conductive pattern is formed as a transparent conductive film
having an embossed surface through haze processing.
7. The device of claim 6, wherein the transparent conductive film
comprises indium tin oxide (ITO) or indium zinc oxide (IZO).
8. The device of claim 6, wherein the pixel electrode forms a
horizontal field or a vertical field together with the common
electrode.
9. The device of claim 6, further comprising: a gate pad comprising
a gate pad lower electrode connected with the gate line and a gate
pad upper electrode being in contact with the gate pad lower
electrode via a contact hole; a data pad comprising a data pad
lower electrode connected with the data line and a data pad upper
electrode being in contact with the data pad lower electrode via a
contact hole; and a common pad comprising a common pad lower
electrode connected with the common line and a common pad upper
electrode being in contact with the common pad lower electrode via
a contact hole, wherein the gate pad upper electrode, the data pad
upper electrode, and the common pad upper electrode are formed as
the third conductive pattern.
10. A method for fabricating a liquid crystal display (LCD), the
method comprising: forming a gate line with a first conductive
pattern, a gate electrode of a thin film transistor (TFT) connected
with the gate line, and a common line separated from the gate line
on a substrate; coating a gate insulating layer on the entire
surface of the resultant substrate and forming a semiconductor
pattern at a certain region on the gate insulating layer; forming a
data line with a second conductive pattern on the semiconductor
pattern such that it crosses the gate line and the common line to
define a pixel area, a source electrode of the TFT connected with
the data line, and a drain electrode of the TFT facing the source
electrode; coating a passivation film on the entire surface of the
resultant substrate, and patterning the passivation film and the
gate insulating layer to expose a portion of the common line and a
portion of the drain electrode; forming a common electrode with a
third conductive pattern connected with the exposed common line;
and forming a pixel electrode with the third conductive pattern
connected with the exposed drain electrode to form a horizontal
field at the pixel area, the pixel electrode facing the common
electrode, wherein the third conductive pattern is formed as a
dual-layer comprising a metal film and a low reflection film formed
on the metal film.
11. The method of claim 10, wherein the low reflection film
contains a nitride material or an oxide material.
12. The method of claim 11, wherein the low reflection film
comprises at least one of CuNx, MoTiNx, ITO, IZO, TO, and CrOx.
13. The method of claim 10, wherein the low reflection film has a
thickness of 30 .ANG. to 1000 .ANG..
14. The method of claim 10, further comprising: forming a gate pad
which has the first conductive pattern and comprises a gate pad
lower electrode connected with the gate line and a gate pad upper
electrode being in contact with the gate pad lower electrode via a
contact hole; forming a data pad which has the second conductive
pattern and comprises a data pad lower electrode connected with the
data line and a data pad upper electrode being in contact with the
data pad lower electrode via a contact hole; and forming a common
pad which has the first conductive pattern and comprises a common
pad lower electrode connected with the common line and a common pad
upper electrode being in contact with the common pad lower
electrode via a contact hole, wherein the gate pad upper electrode,
the data pad upper electrode, and the common pad upper electrode
are formed as the third conductive pattern.
15. A method for fabricating a liquid crystal display (LCD), the
method comprising: forming a gate line with a first conductive
pattern, a gate electrode of a thin film transistor (TFT) connected
with the gate line, and a common line separated from the gate line
on a substrate; coating a gate insulating layer on the entire
surface of the resultant substrate and forming a semiconductor
pattern at a certain region on the gate insulating layer; forming a
data line with a second conductive pattern on the semiconductor
pattern such that it crosses the gate line to define a pixel area,
a source electrode of the TFT connected with the data line, and a
drain electrode of the TFT facing the source electrode; coating a
passivation film on the entire surface of the resultant substrate,
and patterning the passivation film and the gate insulating layer
to expose a portion of the common line and a portion of the drain
electrode; forming a common electrode with a third conductive
pattern connected with the exposed common line; and forming a pixel
electrode with the third conductive pattern connected with the
exposed drain electrode to form a horizontal field at the pixel
area, the pixel electrode facing the common electrode, wherein the
third conductive pattern is formed as a transparent conductive film
having an embossed surface through haze processing.
16. The method of claim 15, wherein the transparent conductive film
comprises indium tin oxide (ITO) or indium zinc oxide (IZO).
17. The method of claim 15, wherein a SiH4 or NH3 gas is used for
perform the haze processing.
18. The method of claim 15, further comprising: forming a gate pad
which has the first conductive pattern and comprises a gate pad
lower electrode connected with the gate line and a gate pad upper
electrode being in contact with the gate pad lower electrode via a
contact hole; forming a data pad which has the second conductive
pattern and comprises a data pad lower electrode connected with the
data line and a data pad upper electrode being in contact with the
data pad lower electrode via a contact hole; and forming a common
pad which has the first conductive pattern and comprises a common
pad lower electrode connected with the common line and a common pad
upper electrode being in contact with the common pad lower
electrode via a contact hole, wherein the gate pad upper electrode,
the data pad upper electrode, and the common pad upper electrode
are formed as the third conductive pattern.
Description
[0001] This nonprovisional application claims priority under 35
U.S.C. .sctn.119(a) based upon Patent Application No.
10-2009-0067442 filed in Republic of Korea on Jul. 23, 2009 the
entire contents of which are hereby incorporated by reference for
all purposes as if fully set forth herein.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] This document relates to a liquid crystal display and, more
particularly, to a liquid crystal display and its fabrication
method capable of increasing a contrast ratio while reducing a
scattered reflection from a surface.
[0004] 2. Discussion of the Related Art
[0005] A liquid crystal display (LCD) displays images by adjusting
light transmittance of liquid crystal by using fields. The LCD is
divided into a vertical field application type LCD and a horizontal
field application type LCD according to the direction of fields
that drive liquid crystal.
[0006] The vertical field application type LCD drives liquid
crystal in a twisted nematic (TN) mode by vertical fields formed
between pixel electrodes and common electrodes disposed in a facing
manner on upper and lower substrates. The vertical field
application type LCD is advantageous in that it has a high aperture
ratio but disadvantageous in that its viewing angle is narrow.
[0007] The horizontal field application type LCD drives liquid
crystal in an in-plane switching (IPS) mode by horizontal fields
formed between pixel electrodes and common electrodes disposed to
be parallel on a lower substrate. The horizontal field application
type LCD has an advantage that its viewing angle is relatively very
large.
[0008] The horizontal field application type LCD includes a thin
film transistor (TFT) array substrate (i.e., lower plate) and a
color filter array substrate (upper plate) attached in a facing
manner, spacers uniformly maintaining a cell gap between the two
substrates, and liquid crystal filled in the cell gap.
[0009] The TFT array substrate includes a plurality of signal
wirings and TFTs for forming horizontal fields by the pixel, and an
alignment film coated thereon to align liquid crystal. The color
filter array substrate includes color filters for color
implementation, black matrixes for preventing light leakage, and an
alignment film coated thereon to align liquid crystal. Liquid
crystal varies light transmittance by the horizontal field formed
between the pixel electrodes and common electrodes.
[0010] In the LCD, generally, the pixel electrodes and the common
electrodes are formed as a single transparent conductive film or a
single metal film.
[0011] When the pixel electrodes and common electrodes are formed
as a single metal layer, respectively, metal with high
reflexibility has strong qualities of reflecting external light
made incident to a display surface. The reflected external light
causes constructive interference or destructive interference with
light made incident from a backlight of the LCD, which then passes
through a polarizer, causing a spot with a diffraction pattern
generated on a display image of the portion where external light
has been reflected.
[0012] If the pixel electrodes and the common electrodes are formed
as a transparent conductive film to reduce reflexibility, although
the reflexibility is lowered, quality of black luminance is
degraded due to an increase in transmissivity, resulting in
degradation of a contrast ratio.
SUMMARY OF THE INVENTION
[0013] An aspect of this document is to provide a liquid crystal
display (LCD) and its fabrication method capable of reducing
reflexibility on a surface of an electrode with respect to external
light and increasing a contrast ratio of a display image.
[0014] In an aspect, a liquid crystal display (LCD) includes: a
gate line formed as a first conductive pattern; a common line
separated from the gate line and formed as the first conductive
pattern; a data line insulatedly crossing the gate line and the
common line to define a pixel area, and formed as a second
conductive pattern; a thin film transistor (TFT) formed at a
crossing of the gate line and the data line; a common electrode
formed as a third conductive pattern at the pixel area, and
connected with the common line; and a pixel electrode connected
with the TFT and formed as the third conductive pattern to form a
horizontal field together with the common electrode in the pixel
area, wherein the third conductive pattern is formed as a
dual-layer comprising a metal film and a low reflection film formed
on the metal film.
[0015] The low reflection film may contain a nitride material or an
oxide material.
[0016] The low reflection film may comprise at least one of CuNx,
MoTiNx, ITO, IZO, TO, and CrOx.
[0017] The low reflection film may have a thickness of 30 .ANG. to
1000 .ANG..
[0018] The LCD may further include: a gate pad comprising a gate
pad lower electrode connected with the gate line and a gate pad
upper electrode being in contact with the gate pad lower electrode
via a contact hole; a data pad comprising a data pad lower
electrode connected with the data line and a data pad upper
electrode being in contact with the data pad lower electrode via a
contact hole; and a common pad comprising a common pad lower
electrode connected with the common line and a common pad upper
electrode being in contact with the common pad lower electrode via
a contact hole, wherein the gate pad upper electrode, the data pad
upper electrode, and the common pad upper electrode are formed as
the third conductive pattern.
[0019] In another aspect, a liquid crystal display (LCD) includes:
a gate line formed as a first conductive pattern; a common line
separated from the gate line and formed as the first conductive
pattern; a data line insulatedly crossing the gate line to define a
pixel area, and formed as a second conductive pattern; a thin film
transistor (TFT) formed at a crossing of the gate line and the data
line; a common electrode connected with the common line and formed
as a third conductive pattern; and a pixel electrode connected with
the TFT and formed as the third conductive pattern to form a field
together with the common electrode at the pixel area, wherein the
third conductive pattern is formed as a transparent conductive film
having an embossed surface through haze processing.
[0020] The transparent conductive film may comprise indium tin
oxide (ITO) or indium zinc oxide (IZO).
[0021] The pixel electrode may form a horizontal field or a
vertical field together with the common electrode.
[0022] In still another aspect, a method for fabricating a liquid
crystal display (LCD) includes: forming a gate line with a first
conductive pattern, a gate electrode of a thin film transistor
(TFT) connected with the gate line, and a common line separated
from the gate line on a substrate; coating a gate insulating layer
on the entire surface of the resultant substrate and forming a
semiconductor pattern at a certain region on the gate insulating
layer; forming a data line with a second conductive pattern on the
semiconductor pattern such that it crosses the gate line and the
common line to define a pixel area, a source electrode of the TFT
connected with the data line, and a drain electrode of the TFT
facing the source electrode; coating a passivation film on the
entire surface of the resultant substrate, and patterning the
passivation film and the gate insulating layer to expose a portion
of the common line and a portion of the drain electrode; forming a
common electrode as a third conductive pattern connected with the
exposed common line; and forming a pixel electrode as the third
conductive pattern connected with the exposed drain electrode to
form a horizontal field at the pixel area, the pixel electrode
facing the common electrode, wherein the third conductive pattern
is formed as a dual-layer comprising a metal film and a low
reflection film formed on the metal film.
[0023] In yet another aspect, a method for fabricating a liquid
crystal display (LCD) includes: forming a gate line as a first
conductive pattern, a gate electrode of a thin film transistor
(TFT) connected with the gate line, and a common line separated
from the gate line on a substrate; coating a gate insulating layer
on the entire surface of the resultant substrate and forming a
semiconductor pattern at a certain region on the gate insulating
layer; forming a data line with a second conductive pattern on the
semiconductor pattern such that it crosses the gate line to define
a pixel area, a source electrode of the TFT connected with the data
line, and a drain electrode of the TFT facing the source electrode;
coating a passivation film on the entire surface of the resultant
substrate, and patterning the passivation film and the gate
insulating layer to expose a portion of the common line and a
portion of the drain electrode; forming a common electrode as a
third conductive pattern connected with the exposed common line;
and forming a pixel electrode as the third conductive pattern
connected with the exposed drain electrode to form a horizontal
field at the pixel area, the pixel electrode facing the common
electrode, wherein the third conductive pattern is formed as a
transparent conductive film having an embossed surface through haze
processing.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate embodiments of
the invention and together with the description serve to explain
the principles of the invention.
[0025] In the drawings:
[0026] FIG. 1 is a plan view of a thin film transistor (TFT) array
substrate according to a first exemplary embodiment of the present
invention.
[0027] FIG. 2 is a sectional view of the TFT array substrate taken
along lines I-I' and of FIG. 1.
[0028] FIGS. 3a to 3d are sequential sectional views showing a
method of fabricating a TFT array substrate.
[0029] FIGS. 4a to 4c illustrate the process of FIG. 3d in
detail.
[0030] FIG. 5a is a graph showing simulation results obtained by
comparing a reflexibility in case of forming a third conductive
pattern group as a dual-layer including a low reflection film made
of a nitride material according to an exemplary embodiment of the
present invention to reflexibility in case of forming a third
conductive pattern group as a single metal film according to the
related art.
[0031] FIG. 5b is a graph showing simulation results obtained by
comparing a reflexibility in case of forming a third conductive
pattern group as a dual-layer including a low reflection film made
of an oxide material according to an exemplary embodiment of the
present invention to reflexibility in case of forming a third
conductive pattern group as a single metal film according to the
related art.
[0032] FIG. 6 is a plan view of a TFT array substrate according to
a second exemplary embodiment of the present invention.
[0033] FIG. 7 is a sectional view of the TFT array substrate taken
along lines I-I' and II-II' in FIG. 6.
[0034] FIGS. 8a to 8c illustrate haze processing.
[0035] FIG. 9 is photographs showing magnified surfaces of a
transparent conductive material before and after haze
processing.
DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
[0036] Hereinafter, exemplary embodiments of the present invention
will now be described with reference to FIGS. 1 to 9. In the
following exemplary embodiments, an in-plane switching (IPS) mode
thin film transistor (TFT) array substrate fabricated through a
four-masking process and its fabrication method will be described,
but the technical idea of the present invention is not meant to be
limited to the number of masks and a field mode scheme for driving
liquid crystal.
First Embodiment
[0037] A first exemplary embodiment of the present invention will
now be described with reference to FIGS. 1 to 5b. In the first
exemplary embodiment, pixel part and pad part electrodes are formed
as a dual-layer including a metal film and a low reflection film
formed on the metal film.
[0038] FIG. 1 is a plan view of a thin film transistor (TFT) array
substrate according to a first exemplary embodiment of the present
invention, and FIG. 2 is a sectional view of the TFT array
substrate taken along lines I-I' and II-II' of FIG. 1.
[0039] The TFT array substrate illustrated in FIGS. 1 and 2
includes a gate line 2 and a data line 4 formed to cross with a
gate insulating layer 46 interposed therebetween on a lower
substrate 45, a TFT 6 formed at each crossing, a pixel electrode 14
and a common electrode 19 formed to form a horizontal field at a
pixel area provided with the crossing structure, and a common line
16 connected with the common electrode 19. Further, the TFT array
substrate includes a storage capacitor 20 formed at an overlap
portion of the common line 16 and the pixel electrode 14, a gate
pad 24 connected with the gate line 2, a data pad 33 connected with
the data line 4, and a common pad 36 connected with the common line
16.
[0040] The gate line 2 supplying a gate signal and the data line 4
supplying a data signal are formed with a crossing structure with
the gate insulating layer interposed therebetween, defining the
pixel area. Here, the gate line 2 is formed as a first conductive
pattern (i.e., gate metal pattern), and the data line 4 is formed
as a second conductive pattern (i.e., source/drain metal
patterns).
[0041] The common line 16 and the common electrode 19 supply a
reference voltage for driving liquid crystal. The common line 16
includes an internal common line 16A formed to partially overlap
with the pixel electrode 14 at a display area and an external
common line 16B commonly connecting internal common lines 16A at a
non-display area. The common line 16 is formed as a first
conductive pattern.
[0042] The common electrode 19 includes a horizontal part 19A
formed to be parallel to the gate line 2 and connected with the
internal common line 16A via a second contact hole 15 penetrating
through the gate insulating layer 46 and a passivation film 52, and
a finger part 19B extending from the horizontal part 19A to the
pixel area. The common electrode 19 is formed as a third conductive
pattern of a dual-layer including a metal film 35A and a low
reflection film 35B.
[0043] The TFT 6 is switched in response to a gate signal of the
gate line 2 to charge a pixel signal of the data line 4 to the
pixel electrode 14. To this end, the TFT includes a gate electrode
8 connected with the gate line 2, a source electrode 10 connected
with the data line 4, and a drain electrode 12 connected with the
pixel electrode. Further, the TFT 6 includes an active layer 48
overlapping with the gate electrode 88 and the internal common line
16A with the gate insulating layer 46 interposed therebetween and
forming a channel between the source electrode 10 and the drain
electrode 12, and an ohmic-contact layer 50 formed on the active
layer 48, excluding the channel, for an ohmic-contact with the
source electrode 10 and the drain electrode 12. The active layer 48
and the ohmic-contact layer 50 are formed to overlap with the data
line 4 formed as the second conductive pattern and the data pad
lower electrode 32 together with the source electrode 10 and the
drain electrode 12.
[0044] The pixel electrode 14, facing the common electrode 19 at
the pixel area, forms a horizontal field. The pixel electrode 14 is
connected with the drain electrode 12 of the TFT 6 via a first
contact hole 13 penetrating through the passivation film 52 and
formed at the pixel area. In particular, the pixel electrode 14
includes a horizontal part 14A connected with the drain electrode
12 and formed to be parallel to an adjacent gate line 2, and a
finger part 14B, which has a finger shape, extending from the
horizontal part 14A to the pixel area and formed to be parallel to
the finger part of the common electrode 19. The pixel electrode 14
is formed as a third conductive pattern formed as a dual-layer
including the metal film 35A and the low reflection film 35B.
[0045] The horizontal part 14A and the outermost finger part 14B of
the pixel electrode 14 overlap partially with the internal common
line 16A with the gate insulating layer 46 and the passivation film
52 interposed therebetween, forming a storage capacitor 20. The
storage capacitor 20 stably maintains a pixel signal of a current
which has been charged in the pixel electrode 14 until when a pixel
signal of a next frame is charged.
[0046] The gate line 2 is connected with a gate driver (not shown)
via the gate pad 24. The gate pad 24 includes a gate pad lower
electrode 26 extending from the gate line 2 and a gate pad upper
electrode 28 connected with the gate pad lower electrode 26 via a
third contact hole 27 penetrating through the gate insulating layer
46 and the passivation film 52. The gate pad lower electrode 26 is
formed as the first conductive pattern, and the gate pad upper
electrode 28 is formed as the third conductive pattern of a
dual-layer including the metal film 35A and the low-resistance film
35B.
[0047] The data line 4 is connected with a data driver (not shown)
via a data pad 30. The data pad includes a data pad lower electrode
32 extending from the data line 4 and a data pad upper electrode 34
connected with the data pad lower electrode 32 via a fourth contact
hole 33 penetrating through the passivation film 52. The data pad
lower electrode 32 is formed as the second conductive pattern, and
the data pad upper electrode 34 is formed as the third conductive
pattern of a dual-layer including the metal film 35A and the low
reflection film 35B.
[0048] The common line 16 is connected with an external reference
voltage source (not shown) via the common pad 36. The common pad 36
includes a common pad lower electrode 38 extending from the eternal
common line 16B and a common pad upper electrode 40 connected with
the common pad lower electrode 38 via a fifth contact hole 39
penetrating through the gate insulating layer 46 and the
passivation film 52. The common pad lower electrode 38 is formed as
the first conductive pattern, and the common pad upper electrode 40
is formed as the third conductive pattern of a dual-layer including
the metal film 35A and the low reflection 35B.
[0049] The third conductive pattern including the pixel electrode
14, the common electrode 19, the gate pad upper electrode 28, the
data pad upper electrode 34, and the common pad upper electrode 40
includes the metal film 35A. Thus, according to the exemplary
embodiment of the present invention, an increase in the
transmissivity can be restrained, and thus, a contrast ratio of an
image can be enhanced, compared with the case where the third
conductive pattern is formed only as a single transparent
conductive film. In this case, if the third conductive pattern is
formed only as a single metal film, the metal film having a high
reflexibility would scattered-reflect external light to degrade a
display quality, so in the exemplary embodiment of the present
invention, the low reflection film 35B is additionally formed on
the metal film 35A. The low reflection film 35B contains a nitride
material or an oxide material to reduce a surface reflexibility
with respect to external light.
[0050] A method of fabricating the TFT array substrate with such a
configuration will now be described through four masking
processes.
[0051] With reference to FIG. 3a, a first conductive pattern group,
including the gate line 2, the gate electrode 8, the gate pad lower
electrode 26, the common line 16, and the common pad lower
electrode 38, is formed on the lower substrate 45 through a first
masking process.
[0052] In detail, a first conductive material is formed on the
lower substrate 45 through a deposition method such as sputtering.
Next, the first conductive material is patterned through a
photolithography process and an etching process using a first mask
to form the gate line 2, the gate electrode 8, the gate pad lower
electrode 26, the common line 16, and the common pad lower
electrode 38. Here, as the first conductive material, Cr, MoW,
MoTi, Cr/Al, Cu, Al(Nd), Mo/Al, Mo/Al(Nd), Cr/Al(Nd), and the like,
may be used.
[0053] With reference to FIG. 3b, the gate insulating layer 46 is
coated on the lower substrate 45 with the first conductive pattern
group formed thereon through a deposition method such as PECVD or
sputtering. As the material of the gate insulating layer 46, an
inorganic insulation material such as silicon oxide (SiOx), silicon
nitride (SiNx), or the like, may be used. Subsequently, a
semiconductor pattern including the active layer 48 and the
ohmic-contact layer 50, and a second conductive pattern group
including the data line, the source electrode 10, the drain
electrode 12, and the data pad lower electrode 32 are formed on the
gate insulating layer 46 by using a second masking process.
[0054] In detail, an amorphous silicon layer, an n+ amorphous
silicon layer, and a second conductive material are sequentially
formed on the lower substrate 45 with the gate insulating layer 46
formed thereon through a deposition method such as PECVD,
sputtering, and the like. Here, as the second conductive material,
Cr, MoW, MoTi, Cr/Al, Cu, Al(Nd), Mo/Al, Mo/Al(Nd), Cr/Al(Nd), and
the like, may be used. Thereafter, a photoresist pattern is formed
on the second conductive material through a photolithography
process using a second mask. As the second mask, a diffraction
(i.e., slit) exposure mask having a diffraction exposure part or a
semi-transmissive mask is used at a channel part of the TFT. The
second mask makes a photoresist pattern at the channel part be
lower than a photoresist pattern at a different second conductive
pattern group part. Subsequently, the second conductive material is
patterned through a wet etching process using the photoresist
pattern to form a second conductive pattern group including the
data line 4, the source electrode 10, the drain electrode 12
integrated with the source electrode 10, and the data pad lower
electrode 32. And then, the n+ amorphous silicon layer and the
amorphous silicon layer are simultaneously patterned through a dry
etching process using the same photoresist pattern to form the
ohmic-contact layer 50 and the active layer 48. And, the
photoresist pattern relatively low at the channel part is removed
through an ashing process using oxygen (O.sub.2) plasma, and the
source/drain metal patterns and the ohmic-contact layer 50 at the
channel part are then etched through a dry etching process.
Accordingly, the active layer 48 of the channel part is exposed,
separating the source electrode 10 and the drain electrode 12.
Thereafter, the photoresist patterns remaining on the second
conductive pattern group are all removed through a strip
process.
[0055] With reference to FIG. 3c, the passivation film 52,
including the first to fifth contact holes 13, 15, 27, 33, and 39,
is formed on the gate insulating layer 46 with the second
conductive pattern group formed thereon by using a third masking
process.
[0056] In detail, the passivation film 52 is formed on the entire
surface of the gate insulating layer 46 with the second conductive
pattern group formed thereon through a deposition method such as
PECVD or the like. As a material of the passivation film 52, an in
organic insulation material similar to the gate insulating layer
46, an acrylic organic compound having a small dielectric constant,
or an organic insulation material such as benzocyclobetene (BCB),
perfluorocyclobutane (PFCB), and the like, may be used.
Subsequently, the passivation film 52 is patterned through a
photolithography process and an etching process using a third mask
to form the first to fifth contact holes 13, 21, 27, 33, and 39.
The first contact hole 13, penetrating through the passivation film
52, exposes the drain electrode 12, and the second contact hole 15,
penetrating through the passivation film 52 and the gate insulating
layer 46, exposes the internal common line 16A. The third contact
hole 27, penetrating through the passivation film 52 and the gate
insulating layer 46, exposes the gate pad lower electrode 26, the
fourth contact hole 33, penetrating through the passivation film
52, exposes the data pad lower electrode 32, and the fifth contact
hole 39, penetrating through the passivation film 52 and the gate
insulating layer 46, exposes the common pad lower electrode 38.
[0057] With reference to FIG. 3d, a third conductive pattern group,
including the pixel electrode 14, the common electrode 19, the
storage upper electrode 22, the gate pad upper electrode 28, the
data pad upper electrode 34, and the common pad upper electrode 40
each formed as a dual-layer, is formed by using a fourth masking
process.
[0058] In detail, as shown in FIG. 4a, a metal material is coated
on the lower substrate 45 with the passivation film 52 including
the contact holes 13, 15, 27, 33, and 39 formed thereon, through a
deposition method such as sputtering or the like. As the metal
material, Cr, MoW, MoTi, Cr/Al, Cu, Al(Nd), Mo/Al, Mo/Al(Nd),
Cr/Al(Nd), and the like, may be used. Subsequently, a reactive
sputtering process is performed by using a metal target such as Cu,
Cr, MoTi, and the like, that reacts with nitrogen (N.sub.2) plasma
or oxygen (O.sub.2) plasma, to form a low reflection material on
the lower substrate 45 with the metal material formed thereon. In
this case, as the low reflection material, a nitride-based material
such as CuNx, MoTiNx, and the like, is used.
[0059] Meanwhile, in the reactive sputtering process, a transparent
conductive target such as ITO, IZO, TO, and the like, may be used
instead of the metal target. In this case, an oxide-based material
such as ITO, IZO, TO, CrOx, and the like, is used as the low
reflection material.
[0060] A deposition thickness of the low reflection material is
preferably 30 .ANG. to 1000 .ANG.. If the thickness of the low
reflection material is lower than 30 .ANG., the function of
reducing the surface reflexibility is degraded, while if the
thickness of the low reflection material exceeds 1000 .ANG., a
deposition quality is degraded and the luminance is reduced.
[0061] Subsequently, the metal material and the low reflection
material are simultaneously patterned through a photolithography
process and an etching process using a fourth mask to form the
third conductive pattern group including the pixel electrode 14,
the common electrode 19, the gate pad upper electrode 28, the data
pad upper electrode 34, and the common pad upper electrode 40 each
including dual-layer (metal film 35A and low reflection film 35B).
The pixel electrode 14 is electrically connected with the drain
electrode 12 via the first contact hole 13. The common electrode 19
is electrically connected with the internal common line 16A via the
second contact hole 15. The gate pad upper electrode 28 is
electrically connected with the gate pad lower electrode 26 via the
third contact hole 27. The data pad upper electrode 34 is
electrically connected with the data pad lower electrode 32 via the
fourth contact hole 33. The common pad upper electrode 40 is
electrically connected with the common pad lower electrode 38 via
the fifth contact hole 39.
[0062] FIG. 5a is a graph showing simulation results obtained by
comparing a reflexibility in case of forming the third conductive
pattern group as a dual-layer including a low reflection film made
of a nitride material according to an exemplary embodiment of the
present invention to reflexibility in case of forming a third
conductive pattern group as a single metal film according to the
related art. In the graph shown in FIG. 5, a vertical axis
indicates reflexibility (%) and a horizontal axis indicates
wavelength (nm). In the graph, a line `A` represents reflexibility
when the third conductive pattern group is formed as an MoTi single
film, a line represents reflexibility at a middle portion of the
third conductive pattern group formed as a dual-layer of MoTi and
CuNx, and a line `C` represents reflexibility at an edge portion of
the third conductive pattern group formed as a dual-layer of MoTi
and CuNx.
[0063] As shown in FIG. 5a, it is noted that the surface
reflexibilities `B` and `C` according to the exemplary embodiment
of the present invention are much smaller than the related art
reflexibility `A`.
[0064] FIG. 5b is a graph showing simulation results obtained by
comparing a reflexibility in case of forming the third conductive
pattern group as a dual-layer including a low reflection film made
of an oxide material according to an exemplary embodiment of the
present invention to reflexibility in case of forming the third
conductive pattern group as a single metal film according to the
related art. In the graph shown in FIG. 5b, a vertical axis
indicates reflexibility (%), and a horizontal axis indicates
wavelength (nm). In the graph, a line `A` represents reflexibility
in case of forming the third conductive pattern group as a MoTi
single film, a line `B` represents reflexibility in case of forming
the third conductive pattern group as a dual-layer of MoTi and ITO
(100 .ANG.), a line `C` represents reflexibility in case of forming
the third conductive pattern group as a dual-layer of MoTi and ITO
(200 .ANG.), and a line `D` represents reflexibility in case of
forming the third conductive pattern group as a dual-layer of MoTi
and ITO (300 .ANG.).
[0065] As shown in FIG. 5b, it is noted that the surface
reflexibilities `B` to `D` according to the exemplary embodiment of
the present invention are much smaller than the related art
reflexibility `A`. Because the low reflection film serves to absorb
external light, the effect of reducing the surface reflexibility is
increased as the thickness of the low reflection film increases
within a certain range (30 .ANG. to 1000 .ANG.).
[0066] As described above, according to the LCD and its fabrication
method according to the first exemplary embodiment of the present
invention, the third conductive pattern group of the pixel
electrode and the like is formed as the dual-layer including the
metal film and the low reflection film, so the reflexibility at the
electrode surface can be reduced over external light while
increasing the contrast ratio of a display image, thereby
significantly reducing generation of spots due to external light.
The LCD and its fabrication method according to the first exemplary
embodiment of the present invention can be applicable as it is to
any configuration, such as, for example, a fringe field switching
(FFS) mode LCD, in which the pixel electrodes and common electrodes
form horizontal fields and have a finger structure.
Second Embodiment
[0067] A second exemplary embodiment of the present invention will
now be described with reference to FIGS. 6 to 9. In the second
exemplary embodiment, pixel part and pad part electrodes are formed
as a single transparent conductive film with an embossed surface
through haze processing.
[0068] FIG. 6 is a plan view of a TFT array substrate using four
masking processes according to a second exemplary embodiment of the
present invention, and FIG. 7 is a sectional view of the TFT array
substrate taken along lines and II-IP in FIG. 6.
[0069] The TFT array substrate as illustrated in FIGS. 6 and 7
includes a gate line 102 and a data line 104 formed to cross with a
gate insulating layer 146 interposed therebetween on a lower
substrate 145, a TFT 106 formed at each crossing, a pixel electrode
114 and a common electrode 119 formed to form a horizontal field at
a pixel area provided with the crossing structure, and a common
line 116 connected with the common electrode 119. Further, the TFT
array substrate includes a storage capacitor 120 formed at an
overlap portion of the common line 116 and the pixel electrode 114,
a gate pad 124 connected with the gate line 102, a data pad 133
connected with the data line 104, and a common pad 136 connected
with the common line 116.
[0070] The gate line 102 supplying a gate signal and the data line
104 supplying a data signal are formed with a crossing structure
with the gate insulating layer interposed therebetween, defining
the pixel area. Here, the gate line 102 is formed as a first
conductive pattern (i.e., gate metal pattern), and the data line
104 is formed as a second conductive pattern (i.e., source/drain
metal patterns).
[0071] The common line 116 and the common electrode 119 supply a
reference voltage for driving liquid crystal. The common line 116
includes an internal common line 116A formed to partially overlap
with the pixel electrode 114 at a display area and an external
common line 116B commonly connecting internal common lines 116A at
a non-display area. The common line 116 is formed as a first
conductive pattern.
[0072] The common electrode 119 includes a horizontal part 119A
formed to be parallel to the gate line 102 and connected with the
internal common line 116A via a second contact hole 115 penetrating
through the gate insulating layer 146 and a passivation film 152,
and a finger part 119B extending from the horizontal part 119A to
the pixel area. The common electrode 119 is formed as a third
conductive pattern, a single transparent conductive pattern, having
an embossed surface.
[0073] The TFT 106 is switched in response to a gate signal of the
gate line 102 to charge a pixel signal of the data line 104 to the
pixel electrode 114. To this end, the TFT includes a gate electrode
108 connected with the gate line 102, a source electrode 110
connected with the data line 104, and a drain electrode 112
connected with the pixel electrode. Further, the TFT 106 includes
an active layer 148 overlapping with the gate electrode 188 and the
internal common line 116A with the gate insulating layer 146
interposed therebetween and forming a channel between the source
electrode 110 and the drain electrode 112, and an ohmic-contact
layer 150 formed on the active layer 148, excluding the channel,
for an ohmic-contact with the source electrode 110 and the drain
electrode 112. The active layer 148 and the ohmic-contact layer 150
are formed to overlap with the data line 104 formed as the second
conductive pattern and the data pad lower electrode 132 together
with the source electrode 110 and the drain electrode 112.
[0074] The pixel electrode 114, facing the common electrode 119 at
the pixel area, forms a horizontal field. The pixel electrode 114
is connected with the drain electrode 112 of the TFT 6 via a first
contact hole 113 penetrating through the passivation film 152 and
formed at the pixel area. In particular, the pixel electrode 114
includes a horizontal part 114A connected with the drain electrode
112 and formed to be parallel to an adjacent gate line 102, and a
finger part 114B, which has a finger shape, extending from the
horizontal part 114A to the pixel area and formed to be parallel to
the finger part of the common electrode 119. The pixel electrode
114 is formed as a third conductive pattern, a single transparent
conductive pattern, having an embossed surface.
[0075] The horizontal part 114A and the outermost finger part 114B
of the pixel electrode 114 overlap partially with the internal
common line 116A with the gate insulating layer 146 and the
passivation film 152 interposed therebetween, forming a storage
capacitor 120. The storage capacitor 120 stably maintains a pixel
signal of a current which has been charged in the pixel electrode
114 until when a pixel signal of a next frame is charged.
[0076] The gate line 102 is connected with a gate driver (not
shown) via the gate pad 124. The gate pad 124 includes a gate pad
lower electrode 126 extending from the gate line 102 and a gate pad
upper electrode 128 connected with the gate pad lower electrode 126
via a third contact hole 127 penetrating through the gate
insulating layer 146 and the passivation film 152. The gate pad
lower electrode 126 is formed as the first conductive pattern, and
the gate pad upper electrode 128 is formed as the third conductive
pattern, a single transparent conductive pattern, having an
embossed surface.
[0077] The data line 104 is connected with a data driver (not
shown) via a data pad 130. The data pad includes a data pad lower
electrode 132 extending from the data line 104 and a data pad upper
electrode 134 connected with the data pad lower electrode 132 via a
fourth contact hole 133 penetrating through the passivation film
152. The data pad lower electrode 132 is formed as the second
conductive pattern, and the data pad upper electrode 134 is formed
as the third conductive pattern of a dual-layer including the metal
film 135A and the low reflection film 135B.
[0078] The common line 116 is connected with an external reference
voltage source (not shown) via the common pad 136. The common pad
136 includes a common pad lower electrode 138 extending from the
eternal common line 116B and a common pad upper electrode 140
connected with the common pad lower electrode 138 via a fifth
contact hole 139 penetrating through the gate insulating layer 146
and the passivation film 152. The common pad lower electrode 138 is
formed as the first conductive pattern, and the common pad upper
electrode 140 is formed as the third conductive pattern, a single
transparent conductive pattern, having an embossed surface.
[0079] The third conductive pattern including the pixel electrode
114, the common electrode 119, the gate pad upper electrode 128,
the data pad upper electrode 134, and the common pad upper
electrode 140 is formed as the single transparent conductive film
having the embossed surface. The third conductive pattern scatters
external light made incident thereto from its embossed surface to
considerably reduce the amount of reflection of the external light
that may cause a constructive interference or destructive
interference over light made incident from a backlight of the LCD,
thus reducing the surface reflexibility with respect to the
external light. In addition, the third conductive pattern having
the embossed surface restrains an increase in the transmissivity to
lead to an increase in the contrast ratio, compared with the case
where the surface is smooth.
[0080] The method of fabricating the TFT array substrate with such
configuration is substantially the same as that of the fabrication
method described with reference to FIGS. 3a to 4c, except for the
formation of the third conductive pattern group. Thus, only the
method of forming the third conductive pattern group will now be
described.
[0081] When first to third masking processes are performed, the
passivation film 152 including the contact holes 113, 115, 127,
133, and 139 are formed along with the first and second conductive
pattern groups on the substrate 145. The third conductive pattern
group made of a transparent conductive material, including the
pixel electrode 114, the common electrode 199, the storage upper
electrode 122, the gate pad upper electrode 128, the data pad upper
electrode 134, and the common pad upper electrode 140, each having
the embossed surface, is formed on the passivation film 152 by
using a fourth masking process.
[0082] In detail, as shown in FIG. 8a, a transparent conductive
material is coated on the lower substrate 145 with the passivation
film 152 formed thereon through a deposition method such as
sputtering or the like. As the transparent conductive material,
ITO, IZO, and the like, may be used. Subsequently, as shown in FIG.
8b, SiH4 or NH3 gas is injected into a processing chamber in which
a certain temperature and pressure are maintained, to
plasma-process the transparent conductive material formed on the
lower substrate 145. Then, the surface of the transparent
conductive material is haze-processed in an embossed form through
the plasma processing as shown in FIG. 8c. The certain pressure may
be 500 mmTorr or lower, and the certain temperature may range from
200.degree. C. to 700.degree. C. As to the haze processing, an
oxygen component of the transparent conductive material and a
hydrogen component of the injected gas react with each other under
a plasma atmosphere, generating water, and reduction occurs in an
indium (In) component constituting the transparent conductive
material due to the influence of the chemical reaction. Roughness
of the surface of the transparent conductive material increases due
to the reduction of the indium component, resulting in the distinct
embossed form as shown in FIG. 9.
[0083] When the haze processing is completed, the transparent
conductive material is patterned through a photolithography process
and an etching process using a fourth mask to form the third
conductive pattern group including the pixel electrode 114, the
common electrode 199, the gate pad upper electrode 128, the data
pad upper electrode 134, and the common pad upper electrode 140
each having the embossed surface. The pixel electrode 114 is
electrically connected with the drain electrode 112 via the first
contact hole 113.
[0084] The common electrode 119 is electrically connected with the
internal common line 116A via the second contact hole 115. The gate
pad upper electrode 128 is electrically connected with the gate pad
lower electrode 126 via the third contact hole 127. The data pad
upper electrode 134 is electrically connected with the data pad
lower electrode 132 via the fourth contact hole 133. The common pad
upper electrode 140 is electrically connected with the common pad
lower electrode 138 via the fifth contact hole 139.
[0085] As described above, according to the LCD and its fabrication
method according to the second exemplary embodiment of the present
invention, the third conductive pattern group such as the pixel
electrode and the like is formed as the single transparent
conductive film having the embossed surface, so the contrast ratio
of a display image can be increased and the reflexibility at the
electrode surface with respect to external light can be reduced,
thus considerably reducing generation of spots by external light.
The second exemplary embodiment of the present invention has a wide
applicable coverage compared with the first exemplary embodiment,
and is advantageous in terms of time required for processing and a
material cost. Also, according to the LCD and its fabrication
method according to the second exemplary embodiment of the present
invention, the electrode part is formed by using only the
haze-processed transparent conductive film, the LCD and its
fabrication method according to the second exemplary embodiment can
be sufficiently applicable to a vertical field mode, to which the
LCD and its fabrication method according to the first exemplary
embodiment can be hardly applicable, due to degradation of
luminance (because of the presence of the metal film) as well as to
the horizontal field mode. In other words, the technique proposed
through the second exemplary embodiment of the present invention
can be applicable as it is to any mode, for example, an IPS mode,
an FFS mode, a TN mode, a VA mode, and the like, in which an
electrode part is formed by using a transparent conductive film. In
addition, according to the LCD and its fabrication method according
to the second exemplary embodiment of the present invention, the
electrode part is formed as the single transparent conductive film,
time required for processing can be shortened and the material cost
can be reduced compared with the first exemplary embodiment in
which the electrode part is formed as a dual-layer.
[0086] It will be apparent to those skilled in the art that various
modifications and variation can be made in the present invention
without departing from the spirit or scope of the invention. Thus,
it is intended that the present invention cover the modifications
and variations of this invention provided they come within the
scope of the appended claims and their equivalents.
* * * * *