U.S. patent application number 12/853745 was filed with the patent office on 2011-01-13 for method of manufacturing semiconductor package.
This patent application is currently assigned to SAMSUNG ELECTRONICS CO., LTD.. Invention is credited to Woo-Pyo Jeong.
Application Number | 20110008932 12/853745 |
Document ID | / |
Family ID | 40955496 |
Filed Date | 2011-01-13 |
United States Patent
Application |
20110008932 |
Kind Code |
A1 |
Jeong; Woo-Pyo |
January 13, 2011 |
METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE
Abstract
Provided is a semiconductor package and method of manufacturing
same. The method includes: forming a plurality of semiconductor
chips which have the same pattern direction on a semiconductor
substrate, each of which includes a memory cell region, a
peripheral region and a pad region, and in each of which the pad
region is disposed in an edge region; separating the semiconductor
chips, which are formed on the semiconductor substrate, from one
another; and disposing semiconductor chips, which are selected from
the separated semiconductor chips, on a package substrate by
changing the pattern directions of the selected semiconductor chips
and arranging pad regions of the selected semiconductor chips in a
center region of the package substrate.
Inventors: |
Jeong; Woo-Pyo; (Seoul,
KR) |
Correspondence
Address: |
MILLS & ONELLO LLP
ELEVEN BEACON STREET, SUITE 605
BOSTON
MA
02108
US
|
Assignee: |
SAMSUNG ELECTRONICS CO.,
LTD.
Suwon-si
KR
|
Family ID: |
40955496 |
Appl. No.: |
12/853745 |
Filed: |
August 10, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12367596 |
Feb 9, 2009 |
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12853745 |
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Current U.S.
Class: |
438/107 ;
257/E21.499 |
Current CPC
Class: |
H01L 2224/48091
20130101; H01L 2224/73265 20130101; H01L 25/50 20130101; H01L 24/06
20130101; H01L 24/29 20130101; H01L 2224/48091 20130101; H01L
2924/00014 20130101; H01L 2924/00014 20130101; H01L 2924/19041
20130101; H01L 2924/01005 20130101; H01L 2924/00014 20130101; H01L
2924/14 20130101; H01L 2224/73265 20130101; H01L 2924/15311
20130101; H01L 2924/078 20130101; H01L 2224/73265 20130101; H01L
24/48 20130101; H01L 24/73 20130101; H01L 2225/06562 20130101; H01L
2224/0401 20130101; H01L 24/32 20130101; H01L 27/105 20130101; H01L
2224/16 20130101; H01L 2924/014 20130101; H01L 2224/73257 20130101;
H01L 2224/16145 20130101; H01L 2223/54406 20130101; H01L 2224/48145
20130101; H01L 2924/00014 20130101; H01L 2224/32145 20130101; H01L
23/3128 20130101; H01L 2924/181 20130101; H01L 24/91 20130101; H01L
2224/48145 20130101; H01L 2224/05553 20130101; H01L 2924/01033
20130101; H01L 25/0655 20130101; H01L 2924/19107 20130101; H01L
2224/48227 20130101; H01L 2224/16225 20130101; H01L 27/0207
20130101; H01L 2224/32145 20130101; H01L 2924/00012 20130101; H01L
2224/45099 20130101; H01L 2924/00 20130101; H01L 2224/32145
20130101; H01L 2224/45015 20130101; H01L 2924/00012 20130101; H01L
2924/207 20130101; H01L 2924/181 20130101; H01L 2224/48227
20130101; H01L 2924/01006 20130101 |
Class at
Publication: |
438/107 ;
257/E21.499 |
International
Class: |
H01L 21/50 20060101
H01L021/50 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 15, 2008 |
KR |
10-2008-0014048 |
Claims
1. A method of manufacturing a semiconductor package, the method
comprising: forming a plurality of semiconductor chips having the
same pattern direction on a semiconductor substrate, wherein each
of the semiconductor chips comprises a memory cell region, a
peripheral region, and a pad region, wherein the pad region is
disposed in an edge region; separating the plurality of
semiconductor chips from one another; and disposing selected
semiconductor chips, from the separated semiconductor chips, on a
package substrate, including changing the pattern directions of
some of the selected semiconductor chips such that pad regions of
each of the selected semiconductor chips are arranged in an edge
region of the package substrate.
2. The method of claim 1, wherein forming the plurality of
semiconductor chips comprises: forming a memory cell region in a
center region of each semiconductor chip; forming a peripheral
region in each of row and column directions of the memory cell
region; and forming a pad region adjacent to a corner of the memory
cell region.
3. The method of claim 2, wherein disposing the selected
semiconductor chips on the package substrate comprises: disposing a
first chip, from the selected semiconductor chips, on the package
substrate such that a pad region of the first chip is placed in the
edge region of the package substrate; and rotating a second chip,
from the selected semiconductor chips, 90 degrees with respect to
the first chip and disposing the second chip such that a pad region
of the second chip is separated from the pad region of the first
chip.
4. The method of claim 3, wherein disposing the selected
semiconductor chips on the package substrate further comprises
rotating a third chip, from the selected semiconductor chips, 180
degrees with respect to the first chip and disposing the third chip
such that a pad region of the third chip is separated from the pad
region of the second chip.
5. The method of claim 4, wherein disposing the selected
semiconductor chips on the package substrate further comprises
rotating a fourth chip, from the selected semiconductor chips, 270
degrees with respect to the first chip and disposing the fourth
chip such that a pad region of the fourth chip is separated from
the pad region of the third chip.
6. The method of claim 1, wherein forming the plurality of
semiconductor chips comprises: forming a memory cell region in the
center region of each semiconductor chip; forming a peripheral
region in each of row and column directions of the memory cell
region; and forming a pad region parallel to the row or column
direction of the memory cell region.
7. The method of claim 6, wherein disposing the selected
semiconductor chips on the package substrate comprises: arranging
first and second chips, from the selected semiconductor chips, in a
line on the package substrate such that pad regions of the first
and second chips are placed in the edge region of the package
substrate; and rotating third and fourth chips, from the selected
semiconductor chips, 180 degrees with respect to the first chip and
arranging the third and fourth chips such that pad regions of the
third and fourth chips are separated from the pad regions of the
first and second chips, respectively.
8. The method of claim 1, wherein forming the plurality of
semiconductor chips comprises: forming a plurality of memory cell
regions in a line in each semiconductor chip; forming a peripheral
region in each of row and column directions of each memory cell
region; and forming a pad region adjacent to a corner of each
memory cell region, wherein the pad regions are adjacent to each
other.
9. The method of claim 8, wherein disposing the selected
semiconductor chips on the package substrate comprises: disposing a
first chip, from the selected semiconductor chips, on the package
substrate such that a pad region of the first chip is placed in the
edge region of the package substrate; and rotating a second chip,
from the selected semiconductor chips, 180 degrees with respect to
the first chip and disposing the second chip such that a pad region
of the second chip is separated from the pad region of the first
chip.
10. The method of claim 1, wherein forming the plurality of
semiconductor chips comprises: forming a plurality of memory cell
regions in a line in each semiconductor chip; forming a peripheral
region in each of row and column directions of each memory cell
region; and forming a pad region parallel to the row or column
direction of each memory cell region, wherein the pad regions are
adjacent to each other.
11. The method of claim 10, wherein disposing the selected
semiconductor chips on the package substrate comprises: disposing a
first chip, from the selected semiconductor chips, on the package
substrate such that a pad region of the first chip is placed in the
edge region of the package substrate; and rotating a second chip,
from the selected semiconductor chips, 180 degrees with respect to
the first chip and disposing the second chip such that a pad region
of the second chip is separated from the pad region of the first
chip.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional application of U.S. patent
application Ser. No. 12/367,596, filed Feb. 9, 2009, which claims
the benefit of Korean Patent
[0002] Application Number 10-2008-0014048, filed Feb. 15, 2008, in
the Korean Intellectual Property Office, the contents of which
applications are hereby incorporated herein in their entirety by
reference.
BACKGROUND OF THE INVENTION
[0003] 1. Field of the Invention
[0004] The present invention relates to a method of manufacturing a
semiconductor package and, more particularly, to a method of
manufacturing a semiconductor package by flexibly changing the
position of pads.
[0005] 2. Description of the Related Art
[0006] Generally, a conventional semiconductor device (that is, a
semiconductor package) is manufactured through a fabrication
process and an assembly process. In the fabrication process, a
predetermined circuit pattern is repeated on a semiconductor
substrate to form a plurality of cells having integrated circuits.
In the assembly process, semiconductor chips, that is, dies, each
having a plurality of cells formed thereon, are packaged.
[0007] An electrical die sorting (EDS) process is performed between
the fabrication process and the assembly process to inspect the
electrical properties of the cells formed on the semiconductor
substrate. In the EDS process, each cell on the semiconductor
substrate is inspected to determine whether the cell is defective.
Accordingly, the dies formed on a wafer, i.e., the semiconductor
substrate, can be divided into defective and non-defective dies.
After the dies are sorted, they are separated from one another.
Then, one or more of the non-defective dies are packaged to produce
a semiconductor device.
[0008] While semiconductor packages are rapidly becoming smaller,
they are recently becoming faster and more sophisticated.
Accordingly, a plurality of semiconductor devices, which perform
various functions, is included in a single semiconductor
package.
[0009] However, if semiconductor devices having discrete functions
are integrated onto a single semiconductor chip and if the
semiconductor chip is included in a single package, when any one of
the semiconductor devices of the semiconductor chip is defective,
the other semiconductor devices cannot be used. Thus, the number of
usable semiconductor chips that can be obtained from one wafer is
significantly reduced.
[0010] Semiconductor chips, on each of which a plurality of
semiconductor devices having various functions are mounted, can be
applied to various products. In this case, input/output pads of
each semiconductor chip must be arranged in a manner that
facilitates the connection of the semiconductor chip with other
semiconductor chips and increases the packaging density of the
semiconductor chips. That is, it would be advantageous to be able
to flexibly arrange input/output pads of semiconductor chips prior
to packaging.
SUMMARY OF THE INVENTION
[0011] Aspects of the present invention provide a semiconductor
package, and method for making same, that includes an increased
number of semiconductor chips from a single semiconductor substrate
and which is manufactured by process that enables flexibly changing
the positions of pads.
[0012] However, the aspects of the present invention are not
restricted to those explicitly set forth herein. The above and
other aspects of the present invention will become more apparent to
one of ordinary skill in the art to which the present invention
pertains by referencing the detailed description of the presently
preferred embodiments given herein.
[0013] According to an aspect of the present invention, there is
provided a method of manufacturing a semiconductor package. The
method includes: forming a plurality of semiconductor chips having
the same pattern direction on a semiconductor substrate, each of
the semiconductor chips includes a memory cell region, a peripheral
region, and a pad region, wherein the pad region is disposed in an
edge region; separating the plurality of semiconductor chips from
one another; and disposing selected semiconductor chips, from the
separated semiconductor chips, on a package substrate, including
changing the pattern directions of some of the selected
semiconductor chips such that pad regions of each of the selected
semiconductor chips are arrange in a center region of the package
substrate.
[0014] Forming each of the plurality of semiconductor chips can
include: forming a memory cell region in a center region of the
semiconductor chip; forming a peripheral region in each of row and
column directions of the memory cell region; and forming a pad
region adjacent to a corner of the memory cell region.
[0015] Disposing selected semiconductor chips on the package
substrate can include: disposing a first chip, from the selected
semiconductor chips, on the package substrate such that a pad
region of the first chip is placed in the center region of the
package substrate; and rotating a second chip, from the selected
semiconductor chips, 90 degrees with respect to the first chip and
disposing the second chip such that a pad region of the second chip
is adjacent to the pad region of the first chip.
[0016] Disposing the selected semiconductor chips on the package
substrate can further include rotating a third chip, from the
selected semiconductor chips, 180 degrees with respect to the first
chip and disposing the third chip such that a pad region of the
third chip is adjacent to the pad region of the second chip.
[0017] Disposing the selected semiconductor chips on the package
substrate can further include rotating a fourth chip, from the
selected semiconductor chips, 270 degrees with respect to the first
chip and disposing the fourth chip such that a pad region of the
fourth chip is adjacent to the pad region of the third chip.
[0018] Forming each of the plurality of semiconductor chips can
include: forming a memory cell region in the center region of each
semiconductor chip; forming a peripheral region in each of row and
column directions of the memory cell region; and forming a pad
region parallel to the row or column direction of the memory cell
region.
[0019] Disposing the selected semiconductor chips on the package
substrate can include: arranging first and second chips, from the
selected semiconductor chips, in a line on the package substrate
such that pad regions of the first and second chips are placed in
the center region of the package substrate; and rotating third and
fourth chips, from the selected semiconductor chips, 180 degrees
with respect to the first chip and arranging the third and fourth
chips such that pad regions of the third and fourth chips are
adjacent to the pad regions of the first and second chips,
respectively.
[0020] Forming each of the plurality of semiconductor chips can
include: forming a plurality of memory cell regions in a line in
each semiconductor chip; forming a peripheral region in each of row
and column directions of each of the plurality of memory cell
regions; and forming a pad region adjacent to a corner of each of
the plurality if memory cell regions, wherein the pad regions are
adjacent to each other.
[0021] Disposing the selected semiconductor chips on the package
substrate can include: disposing a first chip, from the selected
semiconductor chips, on the package substrate such that a pad
region of the first chip is placed in the center region of the
package substrate; and rotating a second chip, from the selected
semiconductor chips, 180 degrees with respect to the first chip and
disposing the second chip such that a pad region of the second chip
is adjacent to the pad region of the first chip.
[0022] Forming each of the plurality of semiconductor chips can
include: forming a plurality of memory cell regions in a line in
each semiconductor chip; forming a peripheral region in each of row
and column directions of each of the plurality of memory cell
regions; and forming a pad region parallel to the row or column
direction of each of the plurality of memory cell regions, wherein
the pad regions are adjacent to each other.
[0023] Disposing the selected semiconductor chips on the package
substrate can include: disposing a first chip, from the selected
semiconductor chips, on the package substrate such that a pad
region of the first chip is placed in the center region of the
package substrate; and rotating a second chip, from the selected
semiconductor chips, 180 degrees with respect to the first chip and
disposing the second chip such that a pad region of the second chip
is adjacent to the pad region of the first chip.
[0024] According to another aspect of the present invention, there
is provided a method of manufacturing a semiconductor package. The
method includes: forming a plurality of semiconductor chips having
the same pattern direction on a semiconductor substrate, each of
the semiconductor chips includes a memory cell region, a peripheral
region, and a pad region, wherein the pad region is disposed in an
edge region; separating the plurality of semiconductor chips from
one another; and disposing selected semiconductor chips, from the
separated semiconductor chips, on a package substrate, including
changing the pattern directions of some of the selected
semiconductor chips such that pad regions of each of the selected
semiconductor chips are arranged in an edge region of the package
substrate.
[0025] Forming the plurality of semiconductor chips can include:
forming a memory cell region in a center region of each
semiconductor chip; forming a peripheral region in each of row and
column directions of the memory cell region; and forming a pad
region adjacent to a corner of the memory cell region.
[0026] Disposing the selected semiconductor chips on the package
substrate can include: disposing a first chip, from the selected
semiconductor chips, on the package substrate such that a pad
region of the first chip is placed in the edge region of the
package substrate; and rotating a second chip, from the selected
semiconductor chips, 90 degrees with respect to the first chip and
disposing the second chip such that a pad region of the second chip
is separated from the pad region of the first chip.
[0027] Disposing the selected semiconductor chips on the package
substrate can further include rotating a third chip, from the
selected semiconductor chips, 180 degrees with respect to the first
chip and disposing the third chip such that a pad region of the
third chip is separated from the pad region of the second chip.
[0028] Disposing the selected semiconductor chips on the package
substrate can further include rotating a fourth chip, from the
selected semiconductor chips, 270 degrees with respect to the first
chip and disposing the fourth chip such that a pad region of the
fourth chip is separated from the pad region of the third chip.
[0029] Forming the plurality of semiconductor chips can include:
forming a memory cell region in the center region of each
semiconductor chip; forming a peripheral region in each of row and
column directions of the memory cell region; and forming a pad
region parallel to the row or column direction of the memory cell
region.
[0030] Disposing the selected semiconductor chips on the package
substrate can include:
[0031] arranging first and second chips, from the selected
semiconductor chips, in a line on the package substrate such that
pad regions of the first and second chips are placed in the edge
region of the package substrate; and rotating third and fourth
chips, from the selected semiconductor chips, 180 degrees with
respect to the first chip and arranging the third and fourth chips
such that pad regions of the third and fourth chips are separated
from the pad regions of the first and second chips,
respectively.
[0032] Forming the plurality of semiconductor chips can include:
forming a plurality of memory cell regions in a line in each
semiconductor chip; forming a peripheral region in each of row and
column directions of each memory cell region; and forming a pad
region adjacent to a corner of each memory cell region, wherein the
pad regions are adjacent to each other.
[0033] Disposing the selected semiconductor chips on the package
substrate can include: disposing a first chip, from the selected
semiconductor chips, on the package substrate such that a pad
region of the first chip is placed in the edge region of the
package substrate; and rotating a second chip, from the selected
semiconductor chips, 180 degrees with respect to the first chip and
disposing the second chip such that a pad region of the second chip
is separated from the pad region of the first chip.
[0034] Forming the plurality of semiconductor chips can include:
forming a plurality of memory cell regions in a line in each
semiconductor chip; forming a peripheral region in each of row and
column directions of each memory cell region; and forming a pad
region parallel to the row or column direction of each memory cell
region, wherein the pad regions are adjacent to each other.
[0035] Disposing the selected semiconductor chips on the package
substrate can include:
[0036] disposing a first chip, from the selected semiconductor
chips, on the package substrate such that a pad region of the first
chip is placed in the edge region of the package substrate; and
rotating a second chip, from the selected semiconductor chips, 180
degrees with respect to the first chip and disposing the second
chip such that a pad region of the second chip is separated from
the pad region of the first chip.
[0037] In accordance with another aspect of the present invention,
there is provided a semiconductor package, comprising: a plurality
of semiconductor chips having the same patterns, wherein each of
the semiconductor chips comprises a memory cell region, a
peripheral region, and a pad region, wherein the pad region is
disposed in an edge region; and a package substrate on which the
semiconductor chips are disposed so that some of the semiconductor
chips have different pattern directions such that the pad regions
of the semiconductor chips are arranged in a center region or edge
region of the package substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0038] The above and other aspects and features of the present
invention will become more apparent by describing in detail
exemplary embodiments thereof with reference to the attached
drawings. The embodiments depicted therein are provided by way of
example, not by way of limitation, wherein like reference numerals
refer to the same or similar elements. The drawings are not
necessarily to scale, emphasis instead being placed upon
illustrating aspects of the invention. In the drawings:
[0039] FIG. 1 is a plan view of an exemplary embodiment of a
semiconductor substrate on which a plurality of semiconductor chips
is formed according to an aspect of the present invention;
[0040] FIGS. 2A through 2C are plan views of exemplary embodiments
of semiconductor chips according to aspects of the present
invention;
[0041] FIG. 3 shows exemplary embodiments of a process of
separating semiconductor chips from one another according to an
aspect of the present invention;
[0042] FIGS. 4A through 4C are plan views of exemplary embodiments
of center-pad type semiconductor packages according to aspects of
the present invention;
[0043] FIG. 5 is a cross-sectional view of the semiconductor
package shown in FIG. 4A, 4B, or 4C;
[0044] FIGS. 6A through 6D are plan views of exemplary embodiments
of edge-pad type semiconductor packages according to other aspects
of the present invention;
[0045] FIG. 7 is a plan view of an exemplary embodiment of a
semiconductor substrate on which a plurality of semiconductor chips
is formed according to another aspect of the present invention;
[0046] FIGS. 8A through 8D are plan views of exemplary embodiments
of semiconductor chips according to other aspects of the present
invention;
[0047] FIG. 9 shows an exemplary embodiment of a process of
separating semiconductor chips from one another according to
another aspect of the present invention;
[0048] FIGS. 10A through 10D are plan views of exemplary
embodiments of center-pad type semiconductor packages according to
other aspects of the present invention; and
[0049] FIGS. 11A through 11D are plan views of exemplary
embodiments of edge-pad type semiconductor packages according to
other aspects of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0050] Advantages and features of the present invention and methods
of accomplishing the same may be understood more readily by
reference to the following detailed description of exemplary
embodiments and the accompanying drawings. The present invention
may, however, be embodied in many different forms and should not be
construed as being limited to the embodiments set forth herein. In
the drawings, sizes and relative sizes of layers and regions may be
exaggerated for clarity.
[0051] It will be understood that when an element or layer is
referred to as being "on" another element or layer, the element or
layer can be directly on another element or layer or intervening
elements or layers. In contrast, when an element is referred to as
being "directly on" another element or layer, there are no
intervening elements or layers present. As used herein, the term
"and/or" includes any and all combinations of one or more of the
associated listed items.
[0052] Spatially relative terms, such as "below," "beneath,"
"lower," "above," "upper" and the like, may be used herein for ease
of description to describe the relationship of one element or
feature to another element(s) or feature(s) as illustrated in the
figures. It will be understood that the spatially relative terms
are intended to encompass different orientations of the device in
use or operation, in addition to the orientation depicted in the
figures. Like reference numerals in the drawings denote like
elements, and thus their description will be omitted.
[0053] Exemplary embodiments described herein will be described
referring to plan views and/or cross-sectional views by way of
ideal schematic views. Accordingly, the exemplary views may be
modified depending on manufacturing technologies and/or tolerances.
Therefore, the invention is not limited to those exemplary
embodiments shown in the views provided herein, but includes
modifications in configuration formed on the basis of manufacturing
processes. Therefore, regions exemplified in figures have schematic
properties and shapes of regions shown in figures exemplify
specific shapes of regions of elements and do not limit aspects of
the invention.
[0054] Hereinafter, the exemplary embodiments in accordance with
aspects of the present invention will be described in detail with
reference to the attached drawings. A character "F" shown in the
attached drawings is used to indicate a pattern direction of each
semiconductor chip.
[0055] A semiconductor chip, a semiconductor package and a method
of manufacturing the semiconductor package according to an
exemplary embodiment in accordance with aspects of the present
invention will now be described in detail with reference to FIGS. 1
through 6D.
[0056] FIG. 1 is a plan view of an exemplary embodiment of a
semiconductor substrate 1 on which a plurality of semiconductor
chips 10, 20, 30 are formed according to an aspect of the present
invention. Semiconductor chips 10, 20 and 30 are from FIGS. 2A, 2B,
and 2C, respectively. As will be understood, any of semiconductor
chips 10, 20, and 30 can be used in the embodiment of FIG. 1. In
this embodiment, one of semiconductor chips 10, 20, or 30 is formed
on substrate 1.
[0057] Referring to FIG. 1, the semiconductor chips 10, 20 or 30
are repeatedly formed on a top surface of the semiconductor
substrate 1, that is, a wafer. The semiconductor chips 10, 20 or 30
are formed in a fabrication process in which a predetermined
pattern is repeatedly formed. The semiconductor chips 10, 20 or 30
are arranged in a matrix form on the top surface of the
semiconductor substrate 1, in rows and columns. In addition, a
scribe line S/L, which separates the semiconductor chips 10, 20 or
30 from one another, is defined in the semiconductor substrate
1.
[0058] Each of the semiconductor chips 10, 20 or 30 can perform an
independent function in response to an input/output signal. Thus,
each of the semiconductor chips 10, 20 or 30 includes a memory cell
region, a peripheral region, and a pad region. In addition, the
semiconductor chips 10, 20 or 30 have the same design structure and
are formed in the same pattern on the semiconductor substrate 1.
That is, when the semiconductor chips 10, 20 or 30 are formed,
microelectronic devices can be formed by changing two-dimensional
(2D) positions of masks (not shown) on the semiconductor substrate
1. Accordingly, the semiconductor chips 10, 20 or 30 have the same
pattern direction, in the preferred embodiments.
[0059] The memory cell region of each of the semiconductor chips
10, 20 or 30 includes a plurality of memory cells which store data,
that is, microelectronic devices such as a gate line (not shown), a
bit line (not shown) and a capacitor (not shown), and occupies the
largest area of each of the semiconductor chips 10, 20 or 30.
[0060] The peripheral region includes a plurality of logic circuits
that are connected to the memory cells of the memory cell region
and process signals from the memory cells. Generally, the
peripheral region is disposed in each of the row and column
directions of the memory cell region in order to control rows and
columns of wiring lines arranged in the memory cells.
[0061] The pad region includes a plurality of input/output pads
used to input or output control signals and a data signal from the
memory cell region and the peripheral region. The pad region is
disposed in an edge region of each of the semiconductor chips 10,
20 or 30 in order to facilitate electrical connection with external
devices.
[0062] The size of the semiconductor chips 10, 20 or 30, which are
separated from one another by the scribe line S/L, can vary
according to memory capacity and chosen design rules. In addition,
the arrangement of the memory cell region, the peripheral region,
and the pad region in each of the semiconductor chips 10, 20 or 30
can vary according to how each of the semiconductor chips 10, 20 or
30 is to be used.
[0063] Thus, the structures and positions of the memory cell
region, the peripheral region, and the pad region in each of the
semiconductor chips 10, 20 or 30 can be changed in various ways. In
order to implement a center-pad type semiconductor package, the pad
region of each of the semiconductor chips 10, 20 or 30 can be
disposed in the edge region thereof.
[0064] Example embodiments of the structures of each of the
semiconductor chips 10, 20, and 30 will now be described in more
detail with reference to FIGS. 2A through 2C.
[0065] FIGS. 2A through 2C are plan views of example embodiments of
semiconductor chips 10, 20, and 30 that can be formed on the
semiconductor substrate 1 (see FIG. 1), according to aspects of the
present invention.
[0066] Referring to FIG. 2A, the semiconductor chip 10 can be
square or rectangular, as examples, and a memory cell region 12 is
disposed in a center region of the semiconductor chip 10. In
addition, a peripheral region 14 is disposed around the memory cell
region 12. Specifically, the peripheral region 14 can be disposed
in each of the row and column directions of the memory cell region
12. A pad region 16 can be disposed between the peripheral regions
14, that is, disposed adjacent to a corner of the memory cell
region 12.
[0067] Referring to FIGS. 2B and 2C, a memory cell region 22 or 32
(depending on the embodiment) can be disposed in a center region of
the semiconductor chip 20 or 30, and a peripheral region 24 or 34
can be disposed in each of the row and column directions of the
memory cell region 22 or 32. In addition, a pad region 26 or 36 can
be placed parallel to one of the peripheral regions 24 or 34. That
is, the pad region 26 or 36 can be disposed in the row or column
direction of the memory cell region 22 or 32.
[0068] As shown in FIGS. 2A through 2C, the pad region 16, 26 or 36
(depending on the embodiment) can be located in an edge region of,
that is, around, the semiconductor chip 10, 20 or 30.
[0069] After the semiconductor chip 10, 20 or 30 of FIG. 2A, 2B or
2C is repeatedly formed on the semiconductor substrate 1, it is
tested. For example, an electrical die sorting (EDS) process can be
performed to inspect the electrical properties of the semiconductor
chips 10, 20 or 30 formed on the semiconductor substrate 1. In the
EDS process, defective cells are detected from the semiconductor
chips 10, 20 or 30 formed on the semiconductor substrate 1.
Accordingly, the semiconductor chips 10, 20 or 30 formed on the
semiconductor substrate 1 can be divided into defective and
non-defective semiconductor chips.
[0070] After the semiconductor chips 10, 20 or 30 are sorted, they
can be separated from one another as shown in FIG. 3. FIG. 3 shows
an exemplary embodiment of a process of separating semiconductor
chips 10, 20 or 30 from one another according to aspects of the
present invention.
[0071] Referring to FIG. 3, the semiconductor chips 10, 20 or 30,
which are formed on a semiconductor substrate 1, are separated from
one another along a scribe line S/L using a dicing apparatus. Then,
only non-defective ones of the separated semiconductor chips 10, 20
or 30 are used to manufacture a semiconductor package.
[0072] Before the semiconductor chips 10, 20 or 30 are separated
from one another, the thickness of the semiconductor substrate 1
can be reduced in order to produce a thinner semiconductor package.
That is, a rear surface of the semiconductor substrate 1 having the
semiconductor chips 10, 20, or 30 can be lapped, for example.
[0073] Next, the separated semiconductor chips 10, 20 or 30 are
packaged to manufacture a semiconductor package.
[0074] In order to manufacture a large-capacity semiconductor
package, large-capacity semiconductor chips can be formed on a
semiconductor substrate. In this case, the size of each
semiconductor chip can be increased while the number of
semiconductor chips that can be obtained from a sheet of
semiconductor substrate is reduced. Consequently, the yield of the
semiconductor chips can be reduced.
[0075] In order to address this problem, a plurality of
low-capacity semiconductor chips can be integrated into a
large-capacity semiconductor package. In this case, since the
low-capacity semiconductor chips are small-sized, the number of
semiconductor chips that can be obtained from a sheet of
semiconductor substrate is increased, thereby enhancing the
yield.
[0076] When the low-capacity semiconductor chips are assembled into
a single semiconductor package, the position of respective pad
regions of the semiconductor chips in the semiconductor package is
important to prevent electrical short circuits between the
semiconductor chips.
[0077] If the position of the pad regions of the semiconductor
chips in the semiconductor package is fixed, it is difficult to
actively respond to various customer needs. Therefore, it is
required to flexibly change the position of the pad regions of the
semiconductor chips, so that the semiconductor chips can be applied
to various package types.
[0078] In this regard, when the semiconductor chips are packaged,
pads used for electrical connection with external devices can be
arranged in a center or edge region of the semiconductor
package.
[0079] In an exemplary embodiment, a case where respective pad
regions of semiconductor chips are arranged in a center region of
each semiconductor package in order to facilitate the staking of a
plurality of semiconductor packages will be described, as an
example.
[0080] A center-pad type semiconductor package, in which respective
pad regions of a plurality of semiconductor chips are arranged in a
center region of a package substrate when the semiconductor chips
are packaged, and an embodiment of a method of manufacturing the
semiconductor package will now be described in detail with
reference to FIGS. 4A through 4C and 5.
[0081] FIGS. 4A through 4C are plan views of exemplary embodiments
of center-pad type semiconductor packages 100a, 200a, and 300a
according to aspects of the present invention.
[0082] When a plurality of semiconductor chips are bonded onto a
package substrate, the number of semiconductor chips that can be
bonded onto the package substrate can be determined by the desired
capacity of the semiconductor package. In addition, the capacity of
each semiconductor chip can dictate the number of semiconductor
chips that can be bonded onto the package substrate.
[0083] For example, 128 megabyte (M), 256 M byte, or 512 M byte
semiconductor chips can be packaged to manufacture a 1-giga byte
(G) semiconductor package.
[0084] In the exemplary embodiments, a case where 256 M byte
semiconductor chips are packaged to manufacture a 1 G byte
semiconductor package will be described.
[0085] Referring to FIG. 4A, from among a plurality of
semiconductor chips (indicated by reference numeral 10 in FIG. 2A)
which are formed on a semiconductor substrate (indicated by
reference numeral 1 in FIG. 1) and in each of which a pad region is
located at a corner, a first chip 10_1 is bonded to a specified
region of a package substrate 110a. Here, a pad region 16_1 of the
first chip 10_1 must be placed in a center region of the package
substrate 110a.
[0086] From among the semiconductor chips (indicated by reference
numeral 10 in FIG. 2A), which are formed on the semiconductor
substrate (indicated by reference numeral 1 in FIG. 1) and then
separated from one another, a second chip 10_2 is rotated 90
degrees with respect to the first chip 10_1 and placed at one a
side of the first chip 10_1. That is, the second chip 10_2 is
placed on a side of the pad region 16_1 of the first chip 10_1.
Here, the first chip 10_1 and the second chip 10_2 can be separated
from each other with a predetermined gap therebetween. Accordingly,
the pad regions 16_1 and 16_2 of the first chip 10_1 and the second
chip 10_2, respectively, are arranged adjacent to each other in the
center region of the package substrate 110a.
[0087] Next, from among the semiconductor chips (indicated by
reference numeral 10 in FIG. 2A) which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, a third chip 10_3 is
rotated 180 degrees with respect to the first chip 10_1 and placed
on a side of the pad region 16_2 of the second chip 10_2.
[0088] Accordingly, the pad regions 16_2 and 16_3 of the second
chip 10_2 and the third chip 10_3, respectively, are arranged
adjacent to each other in the center region of the package
substrate 110a.
[0089] Next, from among the semiconductor chips (indicated by
reference numeral 10 in FIG. 2A) which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, a fourth chip 10_4 is
rotated 270 degrees with respect to the first chip 10_1 and placed
adjacent to the pad regions 16_1 and 16_3 of the first and third
chips 10_1 and 10_3, respectively. Accordingly, the pad region 16_4
of the fourth chip is arranged to be adjacent to pad regions 16_1
and 16_3 of the first chip 10_1 and the third chip 10_3. And as a
result, pad regions 16_1, 16_2, 16_3, and 16_4 are all arranged in
the center region of the package substrate 110a.
[0090] As described above, if the semiconductor chips (indicated by
reference numeral 10 in FIG. 2A), which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, are bonded onto the package
substrate 110a after they are rotated, the respective pad regions
of the semiconductor chips can be concentrated in the center region
of the package substrate 110a. That is, the center-pad type
semiconductor package 100a can be obtained without using
semiconductor chips whose respective pad regions are disposed in
the center thereof.
[0091] Referring to FIG. 4B, from among a plurality of
semiconductor chips (indicated by reference numeral 20 in FIG. 2B)
which are formed on a semiconductor substrate (indicated by
reference numeral 1 in FIG. 1) and arranged in the same direction,
a first chip 20_1 is bonded to a specified region of a package
substrate 210a. Here, a pad region 26_1 of the first chip 20_1 must
be placed in a center region of the package substrate 210a.
[0092] From among the semiconductor chips (indicated by reference
numeral 20 in FIG. 2B) which are formed on the semiconductor
substrate (indicated by reference numeral 1 in FIG. 1) and then
separated from one another, a second chip 20_2 is placed on a side
of the first chip 20_1. Here, the second chip 20_2 is disposed in
the same direction as the first chip 20_1, and a pad region 26_2 of
the second chip 20_2 is placed in the center region of the package
substrate 210a. Thus, the pad regions 26_1 and 26_2 of the first
and second chips 20_1 and 20_2 can extend across the center region
of the package substrate 210a.
[0093] Next, from among the semiconductor chips (indicated by
reference numeral 20 in FIG. 2B), which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, a third chip 20_3 and a
fourth chip 20_4 are rotated 180 degrees with respect to the first
chip 20_1 such that pad regions 26_3 and 26_4 of the third and
fourth chips 20_3 and 20_4 extend across the center region of the
package substrate 210a. Consequently, the pad regions 26_1 and 26_2
of the first and second chips 20_1 and 20_2 are symmetrical to the
pad regions 26_3 and 26_4 of the third and fourth chips 20_3 and
20_4, respectively.
[0094] As described above, since the pad regions 26_1 through 26_4
of the first through fourth chips 20_1 through 20_4 are arranged
parallel to row directions of memory cell regions, respectively,
they extend across a center region of the package substrate 210a in
a row direction of the package substrate 210a.
[0095] Referring to FIG. 4C, from among a plurality of
semiconductor chips (indicated by reference numeral 30 in FIG. 2C),
which are formed on a semiconductor substrate (indicated by
reference numeral 1 in FIG. 1) and arranged in the same direction,
a first chip 30_1 and a second chip 30_2 are bonded onto a package
substrate 310a such that respective pad regions 36_1 and 36_2 of
the first and second chips 30_1 an 30_2 are arranged in a line.
That is, the first and second chips 30_1 and 30_2 can be bonded
onto the package substrate 310a in the same direction as the
direction in which they were arranged on the semiconductor
substrate (indicated by reference numeral 1 in FIG. 1).
[0096] Then, third and fourth chips 30_3 and 30_4 are placed on
sides of the first and second chips 30_1 and 30_2, respectively,
such that respective pad regions 36_3 and 36_4 of the third and
fourth chips 30_3 and 30_4 are arranged in a line. That is, the
third and fourth chips 30_3 and 30_4 are rotated 180 degrees with
respect to the first chip 30_1 and arranged accordingly.
[0097] As described above, since the pad regions 36_1 through 36_4
of the first through fourth chips 30_1 through 30_4 are arranged
parallel to column directions of memory cell regions, respectively,
they extend across a center region of the package substrate 310a in
a column direction of the package substrate 310a.
[0098] A cross-sectional structure of the center-pad type
semiconductor package 100a, 200a or 300a shown in FIG. 4A, 4B or 4C
will now be described in detail with reference to FIG. 5.
[0099] FIG. 5 is a cross-sectional view of the semiconductor
package 100a, 200a or 300a shown in FIGS. 4A, 4B or 4C,
respectively. That is, each of semiconductor packages 100a, 200a,
and 300a have the same cross-sectional view when taken along a line
IV-IV' of FIG. 4A, 4B and 4C, respectively, as in FIG. 5.
[0100] In the semiconductor package 100a, 200a or 300a of FIG. 5, a
plurality of semiconductor chips are not only arranged on a flat
surface, but are also stacked vertically. Thus, the package
substrate 110a, 210a, or 310a shown in FIG. 4A, 4B or 4C can
correspond to a package substrate 110a or an interposer 110b shown
in FIG. 5. That is, a plurality of semiconductor chips 10_1 and
10_2 can be bonded onto a top surface of the package substrate 110a
or the interposer 110b.
[0101] Specifically, referring to FIG. 5, a semiconductor device
105 is bonded onto the package substrate 110a using an adhesive
103. The semiconductor device 105 can be a memory chip or a central
processing unit (CPU), as examples. While one semiconductor device
105 is bonded onto the package substrate 110a in FIG. 5, a
plurality of semiconductor devices can be bonded onto the top
surface of the package substrate 110a.
[0102] Wiring is formed on a surface of the package substrate 110a,
and substrate pads 102a and 102b, which provide external electrical
connections to the semiconductor package 100a, 200a, or 300a, are
formed on bottom and top surfaces of the package substrate 110a. In
addition, solder balls 101 are attached to the substrate pads 102a
formed on the bottom surface of the package substrate 110a and are
used as external connection terminals.
[0103] Input/output pads 104 are formed on a top surface of the
semiconductor device 105, which is attached to the top surface of
the package substrate 110a. The input/output pads 104 can be
electrically connected to other semiconductor chips and substrates.
In addition, the semiconductor device 105 can be a center-pad type
semiconductor device that has input/output pads arranged in a
center region thereof.
[0104] The interposer 110b, on which the semiconductor chips 10_1
and 10_2 can be stacked, is disposed on the semiconductor device
105.
[0105] The interposer 110b reduces wiring layers when pads, which
provide signals, power supply, and ground connections to a
semiconductor chip, are integrated. In addition, the interposer
110b reduces the length of a wire when each semiconductor chip is
wire-bonded. Specifically, the interposer 110b can include
penetrating electrodes 106. Thus, the input/output pads 104 of the
semiconductor chips 10_1 and 10_2 and the semiconductor device 105,
disposed on and under the interposer 110b, can be directly joined
to the penetrating electrodes 106. As a result, the penetrating
electrodes 106 provide electrical connection paths between the
semiconductor chips 10_1 and 10_2 and the semiconductor device 105.
In addition, connection pads, which provide electrical connection
paths, can be formed on a surface of the interposer 110b.
[0106] The interposer 110b disposed on the semiconductor device 105
can be mechanically and electrically connected to the semiconductor
device 105 by solder bumps 107. The interposer 110b can include the
penetrating electrodes 106 in the center thereof to be electrically
connected to the center-pad type semiconductor device 105.
[0107] The semiconductor chips 10_1 and 10_2 are arranged on a top
surface of the interposer 110b according to the locations of the
solder bumps 107. That is, the semiconductor chips 10_1 and 10_2
are arranged on the top surface of the interposer 11b as shown in
FIG. 4A, 4B or 4C, depending on where the solder bumps 107 are
physically located.
[0108] Accordingly, respective pad regions 16_1 and 16_2 of the
semiconductor chips 10_1 and 10_2 are arranged in a center region
of the interposer 110b and connected to the penetrating electrodes
106, respectively.
[0109] In addition, bonding pads 108b can be formed on top surfaces
of the semiconductor chips 10_1 and 10_2 and the semiconductor
chips 10_1 and 102 can be wire-bonded and, thus, electrically
connected to the interposer 110b and the package substrate
110a.
[0110] The semiconductor package 100a, 200a or 300a described above
is sealed with a molding material, such as epoxy, to enclose the
semiconductor device 105, the interposer 110b, the semiconductor
chips 10_1 and 10_2, bonding wires and junctions therein. Enclosing
the semiconductor package can be done using materials and
techniques known in the art.
[0111] Hereinafter, embodiments of an edge-pad type semiconductor
package, in which respective pad regions of a plurality of
semiconductor chips are arranged in an edge region of a package
substrate when the semiconductor chips are packaged, and a method
of manufacturing the same according to aspects of the present
invention will be described in detail with reference to FIGS. 6A
through 6D.
[0112] FIGS. 6A through 6D are plan views of exemplary embodiments
of an edge-pad type semiconductor packages 100b, 100b', 200b and
300b according to another aspect of the present invention.
[0113] Referring to FIGS. 6A and 6B, from among a plurality of
semiconductor chips (indicated by reference numeral 10 in FIG. 2A)
in each of which a pad region is located at a corner, a first chip
10_1 is bonded to a specified region of a package substrate 110b or
110b'. Here, a pad region 16_1 of the first chip 10_1 must be
placed in an edge region of the package substrate 110b or
110b'.
[0114] Then, a second chip 10_2 is rotated 90 degrees with respect
to the first chip 10_1, which is disposed on the package substrate
110b or 110b', and placed on a side of the first chip 10_1. Here, a
pad region 16_2 of the second chip 10_2 may be adjacent to or
separated from the pad region 16_1 of the first chip 10_1 in the
edge region of the package substrate 110b or 110b'.
[0115] From among the semiconductor chips (indicated by reference
numeral 10 in FIG. 2A), which are formed on a semiconductor
substrate (indicated by reference numeral 1 in FIG. 1) and then
separated from one another, a third chip 10_3 is rotated 180
degrees with respect to the first chip 10_1 and placed on a side of
the second chip 10_2. Here, a pad region 16_3 of the third chip
10_3 may be adjacent to or separated from the pad region 16_2 of
the second chip 10_2 in the edge region of the package substrate
110b or 110b'.
[0116] Next, from among the semiconductor chips (indicated by
reference numeral 10 in FIG. 2A), which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, a fourth chip 10_4 is
rotated 270 degrees with respect to the first chip 10_1 and placed
on a side of each of the first and third chips 10_1 and 10_3. Here,
a pad region 16_4 of the fourth chip 10_4 may be adjacent to or
separated from the pad region 16_1 of the first chip 10_1 in the
edge region of the package substrate 110b or 110b'.
[0117] As described above, if the semiconductor chips (indicated by
reference numeral 10 in FIG. 2A), which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, are bonded onto the package
substrate 110b or 110b' after their pattern directions are changed,
the respective pad regions of the semiconductor chips may be
arranged in the edge region of the package substrate 110b or
110b'.
[0118] Referring to FIGS. 6C and 6D, from among a plurality of
semiconductor chips (indicated by reference numeral 20 in FIG. 2B)
in each of which a pad region is disposed parallel to a row or
column direction of a memory cell region, a first chip 20_1 or 30_1
(depending on the embodiment) is bonded onto a specified region of
a package substrate 210b or 310b. Here, a pad region 26_1 or 36_1
of the first chip 20_1 or 30_1 may be placed in an edge region of
the package substrate 210 or 310b.
[0119] From among the semiconductor chips (indicated by reference
numeral 20 in FIG. 2B), which are formed on a semiconductor
substrate (indicated by reference numeral 1 in FIG. 1) and then
separated from one another, a second chip 20_2 or 30_2 is placed on
a side of the first chip 20_1 or 30_1. Here, the pattern direction
of the second chip 20_2 or 30_2 is identical to that of the first
chip 20_1 or 30_1, and a pad region 26_2 or 36_2 of the second chip
20_2 or 30_2 is placed in the edge region of the package substrate
210b or 310b. Thus, the pad regions 26_1 or 36_1 and 26_2 or 36_2
of the first and second chips 20_1 or 30_1 and 20_2 or 30_2 may be
arranged in a line in the edge region of the package substrate 210b
or 310b.
[0120] Next, from among the semiconductor chips (indicated by
reference numeral 20 in FIG. 2B), which are formed on the
semiconductor substrate (indicated by reference numeral 1 in FIG.
1) and then separated from one another, a third chip 20_3 or 30_3
and a fourth chip 20_4 or 30_4 are rotated 180 degrees with respect
to the first chip 20_1 or 30_1 and placed in the edge region of the
package substrate 210b or 310b. Here, pad regions 26_3 or 36_3 and
26_4 or 36_4 of the third and fourth chips 20_3 or 30_3 and 20_4 or
30_4 may be separated from and symmetrical to the pad regions 26_1
or 36_1 and 26_2 or 36_2 of the first and second chips 20_1 or 30_1
and 20_2 or 30_2 in the edge region of the package substrate 210b
or 310b.
[0121] A semiconductor device, a semiconductor package and an
exemplary embodiment of a method of manufacturing the semiconductor
package according to another aspect of the present invention will
now be described in detail with reference to FIGS. 7 through
11D.
[0122] FIG. 7 is a plan view of an exemplary embodiment of a
semiconductor substrate 2 on which a plurality of semiconductor
chips 40, 50, 60 or 70 (from FIGS. 8A through 8D, respectively) are
formed according to another aspect of the present invention.
[0123] Referring to FIG. 7, the semiconductor chips 40, 50, 60 or
70 (depending on the embodiment) are repeatedly formed on a top
surface of the semiconductor substrate 2. That is, the
semiconductor chips 40, 50, 60 or 70 are arranged in the same
design structure on the semiconductor substrate 2. In addition, a
scribe line S/L, which separates the semiconductor chips 40, 50, 60
or 70 from one another, is defined in the semiconductor substrate
2.
[0124] Each of the semiconductor chips 40, 50, 60 or 70 can include
a plurality of memory cell regions, a plurality of peripheral
regions, and a plurality of pad regions, as discussed above. For
example, two memory cell regions may be formed in each of the
semiconductor chips 40, 50, 60 or 70, and two peripheral regions
may be formed to, correspond to the two memory cell regions,
respectively. In addition, two pad regions, which are used to input
or output signals to/from the two memory cell regions, may be
formed to correspond to the two memory cell regions,
respectively.
[0125] Each of the semiconductor chips 40, 50, 60 or 70 can perform
an independent function. The pad regions corresponding to the
memory cell regions are arranged adjacent to one another in each of
the semiconductor chips 40, 50, 60 or 70. That is, the pad regions
can be arranged in a center region or an edge region of each of the
semiconductor chips 40, 50, 60 or 70.
[0126] The design structure of each of the semiconductor chips 40,
50, 60, and 70 will now be described in more detail with reference
to FIGS. 8A through 8D, respectively.
[0127] FIGS. 8A through 8D are plan views of exemplary embodiments
of semiconductor chips 40, 50, 60, and 70 on a semiconductor
substrate 2 (see FIG. 7) according to other aspects of the present
invention.
[0128] Referring to FIGS. 8A and 8B, the semiconductor chips 40 and
50 (depending on the embodiment) can be rectangular or square, as
examples, and two memory cell regions 42a and 42b or 52a and 52b
can be disposed in each of the semiconductor chips 40 and 50.
[0129] The memory cell regions 42a and 42b or 52a and 52b can be
disposed on both sides of a center region of the semiconductor chip
40 or 50. In addition, the memory cell regions 42a and 42b or 52a
and 52b can be arranged in a row or column direction of the
semiconductor chip 40 or 50. The two memory cell regions 42a and
42b or 52a and 52b have the same pattern direction and are
connected to peripheral regions 44a and 44b or 54a and 54b and pad
regions 46a and 46b or 56a and 56b, respectively, to perform
independent functions.
[0130] The peripheral regions 44a and 44b or 54a and 54b are formed
around the memory cell regions 42a and 42b or 52a and 52b,
respectively. Specifically, the peripheral region 44a and 44b or
54a and 54b can be disposed in each of row and column directions of
the memory cell regions 42a and 42b or 52a and 52b.
[0131] The pad regions 46a and 46b or 56a and 56b connected to the
memory cell regions 42a and 42b or 52a and 52b, respectively, can
be arranged adjacent to each other in the semiconductor chip 40 or
50 (depending on the embodiment). Specifically, the pad region 46a,
46b, 56a or 56b may be disposed adjacent to a corner of the memory
cell region 42a, 42b, 52a or 52b or between the peripheral regions
44a, 44b, 54a or 54b.
[0132] Accordingly, if the memory cell regions 42a and 42b or 52a
and 52b are arranged in the row direction of the semiconductor chip
40 or 50, the pad regions 46a and 46b or 56a and 56b may be also be
arranged in the row direction thereof. However, if the memory cell
regions 42a and 42b or 52a and 52b are arranged in the column
direction of the semiconductor chip 40 or 50, the pad regions 46a
and 46b or 56a and 56b may be also be arranged in the column
direction thereof.
[0133] Referring to FIGS. 8C and 8D, two memory cell regions 62a
and 62b or 72a and 72b can be disposed in a row or column direction
of each of the semiconductor chips 60 and 70 of FIGS. 8C and 8D,
respectively. In addition, peripheral regions 64a and 64b or 74a
and 74b can be formed around the memory cell regions 62a and 62b or
72a and 72b, respectively.
[0134] Pad regions 66a and 66b or 76a and 76b can be disposed
adjacent to each other in an edge region of the semiconductor chip
60 or 70, respectively. That is, the pad region 66a and 66b or 76a
and 76b can be disposed parallel to a row or column direction of
each of the memory cell regions 62a and 62b or 72a and 72b,
respectively.
[0135] As shown in FIGS. 8A through 8D, when the memory cell
regions 42a and 42b, 52a and 52b, 62a and 62b, and 72a and 72b are
formed in each of their respective semiconductor chips 40, 50, 60
and 70, their respective pad regions 46a and 46b, 56a and 56b, 66a
and 66b, and 76a and 76b can be arranged in the edge region of each
of their respective semiconductor chips 40, 50, 60 and 70.
[0136] Accordingly, the semiconductor chips 40, 50, 60 and 70 (see
FIG. 7), having the same pattern direction, can be formed on the
semiconductor substrate 2 (see FIG. 7) using a single mask. In
addition, since the pad regions 46a and 46b, 56a and 56b, 66a and
66b, and 76a and 76b are arranged in the edge region of each of
their respective semiconductor chips 40, 50, 60 and 70, their
positions can be easily changed when the semiconductor chips 40,
50, 60, and 70 are assembled into a semiconductor package.
[0137] Any one of the semiconductor chips 40, 50, 60, and 70 of
FIG. 8A, 8B, 8C or 8D, can be repeatedly formed on the
semiconductor substrate 2, as shown in FIG. 7. After such
formation, the semiconductor chips 40, 50, 60, or 70 on
semiconductor substrate 2 are tested in order to determine whether
they are defective.
[0138] Then, the semiconductor chips 40, 50, 60 or 70 (depending on
the embodiment) formed on the semiconductor substrate 2 are
separated from one another as shown in FIG. 9. FIG. 9 shows an
exemplary embodiment of a process of separating semiconductor chips
40, 50, 60 or 70 from one another according to another aspect of
the present invention.
[0139] Referring to FIG. 9, the semiconductor chips 40, 50, 60 or
70 are separated from one another along a scribe line S/L on a
semiconductor substrate 2 using a dicing apparatus (not in the
art). Then, only non-defective ones of the separated semiconductor
chips 40, 50, 60 or 70 are packaged to manufacture a semiconductor
package.
[0140] A method of packaging the semiconductor chips 40, 50, 60 or
70, which are formed on the semiconductor substrate 2 and then
separated from one another, to manufacture a center-pad type
semiconductor package will now be described in detail.
[0141] FIGS. 10A through 10D are plan views of exemplary
embodiments of center-pad type semiconductor packages 400a, 500a,
600a, and 700a according to another aspect of the present
invention.
[0142] When a plurality of semiconductor chips are bonded onto a
package substrate, the number of semiconductor chips that can be
bonded onto the package substrate can be determined by the desired
capacity of the semiconductor package. In addition, the capacity of
each semiconductor chip can dictate the number of semiconductor
chips that can be bonded onto the package substrate.
[0143] In the exemplary embodiments provided herein, a case where
512 M byte semiconductor chips are packaged to manufacture a 1 G
byte semiconductor package will be described.
[0144] Referring to FIGS. 10A through 10D, from among a plurality
of semiconductor chips (indicated by reference numeral 40, 50, 60,
70 in FIG. 7), which have the same pattern direction and are formed
on a semiconductor substrate (indicated by reference numeral 2 in
FIG. 7), two first chips 40_1, 50_1, 60_1 or 70_1 are bonded to
specified regions of a package substrate 410a, 510a, 610a or 710a,
in FIGS. 10A-D respectively. Here, pad regions 46a_1 and 46b_1,
56a_1 and 56b_1, 66a_1 and 66b_1 or 76a_1 and 76b_1 of the first
chips 40_1, 50_1, 60_1 or 70_1 must be placed in a center region of
the package substrate 410a, 510a, 610a or 710a.
[0145] From among the semiconductor chips 40, 50, 60 or 70 which
are formed on the semiconductor substrate (indicated by reference
numeral 2 in FIG. 7) and then separated from one another, two
second chips 40_2, 50_2, 60_2 or 70_2 are rotated 180 degrees with
respect to the first chips 40_1, 50_1, 60_1 or 70_1 and placed on
sides of the first chips 40_1, 50_1, 60_1 or 70_1, respectively.
That is, each of the second chips 40_2, 50_2, 60_2 or 70_2 is
rotated and placed on a side of each of the pad regions 46a_1 and
46b_1, 56a_1 and 56b_1, 66a_1 and 66b_1 or 76a_1 and 76b_1 of the
first chips 40_1, 50_1, 60_1 or 70_1. Here, the first chips 40_1,
50_1, 60_1 or 70_1 and the second chips 40_2, 50_2, 60_2 or 70_2
may be separated from each other with a predetermined gap
therebetween.
[0146] When the semiconductor chips 40, 50, 60 or 70 are bonded
onto the package substrate 410a, 510a, 610a or 710a as described
above, the pad regions 46a_1, 46b_1, 46a_2 and 46b_2 or 56a_1,
56b_1, 56a_2 and 56b_2 can be concentrated in the center region of
the package substrate 410a or 510a as shown in FIG. 10A or 10B.
Alternatively, the pad regions 66a 1, 66b_1, 66a_2 and 66b_2 or
76a_1, 76b_1, 76a_2 and 76b 2 can extend across the center region
of the package substrate 610a or 710a as shown in FIG. 10C or
10D.
[0147] A cross-sectional structure of each of the semiconductor
packages 400a, 500a, 600a, and 700a shown in FIGS. 10A through 10D
is identical to that of the semiconductor package 100a, 200a, 300a
shown in FIG. 5, so a detailed description there of will be
omitted. That is, each of semiconductor packages 400a, 500a, 600a,
and 700a have the same cross-sectional view when taken along a line
IV-IV' of FIG. 10A, or line similarly positioned in FIGS. 10B
through 10D, as in FIG. 5.
[0148] As described above, when the semiconductor chips 40, 50, 60
or 70 are disposed on a top surface of the package substrate 410a,
510a, 610a or 710a (depending on the embodiment), the pad regions
of the semiconductor chips 40, 50, 60 or 70 can be arranged in the
center region of the package substrate 410a, 510a, 610a or 710a to
easily implement the center-pad type semiconductor package 400a,
500a, 600a or 700a. In addition, the number of processes and costs
required to form the semiconductor chips 40, 50, 60 or 70 on the
semiconductor substrate 2 can be reduced, and the yields of the
semiconductor chips 40, 50, 60 or 70 on each semiconductor
substrate 2 can be increased.
[0149] Meanwhile, the semiconductor chips 40, 50, 60 or 70 (see
FIG. 9), which are formed on the semiconductor substrate 2 (see
FIG. 9) and then separated from one another, may be packaged to
implement an edge-pad type semiconductor package. FIGS. 11A through
11D are plan views of exemplary embodiments of edge-pad type
semiconductor packages 400b, 500b, 600b, and 700b according to
another aspect of the present invention.
[0150] Referring to FIGS. 11A through 11D, from among a plurality
of semiconductor chips (indicated by reference numeral 40, 50, 60
or 70 in FIG. 7), which have the same pattern direction and are
formed on a semiconductor substrate (indicated by reference numeral
2 in FIG.
[0151] 7), two first chips 40_1, 50_1, 60_1 or 70_1 are bonded to
specified regions of a package substrate 410b, 510b, 610b or 710b.
Here, pad regions 46a_1 and 46b_1, 56a _1 and 56b_1, 66a_1 and
66b_1 or 76a _1 and 76b_1 of the first chips 40_1, 50_1, 60_1 or
70_1 are placed in an edge region of the package substrate 41 Ob,
510b, 610b or 710b.
[0152] From among the semiconductor chips 40, 50, 60 or 70 which
are formed on the semiconductor substrate 2 and then separated from
one another, two second chips 40_2, 50_2, 60_2 or 70_2 are rotated
180 degrees with respect to the first chips 40_1, 50_1, 60_1 or
70_1 and placed on sides of the first chips 40_1, 50_1, 60_1 or
70_1, respectively. That is, pad regions 46a_2 and 46b_2, 56a_2 and
56b_2, 66a_2 and 66b_2 or 76a_2 and 76b_2 of the second chips 40_2,
50_2, 60_2 or 702 are separated from the pad regions 46a_1 and
46b_1, 56a _1 and 56b_1, 66a 1 and 66b_1 or 76a _1 and 76b_1 of the
first chips 40_1, 50_1, 60_1 or 70_1, respectively, in the edge
region of the package substrate 410b, 510b, 610b or 710b.
[0153] As described above, an edge-pad type package can be easily
implemented by changing the pattern directions of a plurality of
semiconductor chips and arranging pad regions of the semiconductor
chips in an edge region of a package substrate.
[0154] While the present invention has been particularly shown and
described with reference to exemplary embodiments thereof, it will
be understood by those of ordinary skill in the art that various
changes in form and detail may be made therein without departing
from the spirit and scope of the present invention as defined by
the following claims. The exemplary embodiments should be
considered in a descriptive sense only and not for purposes of
limitation.
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