U.S. patent application number 12/787813 was filed with the patent office on 2010-12-02 for semiconductor device and manufacturing method thereof.
This patent application is currently assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Invention is credited to Yuji ASANO, Junichi KOEZUKA.
Application Number | 20100301329 12/787813 |
Document ID | / |
Family ID | 43219212 |
Filed Date | 2010-12-02 |
United States Patent
Application |
20100301329 |
Kind Code |
A1 |
ASANO; Yuji ; et
al. |
December 2, 2010 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Abstract
An object is to provide a thin film transistor using an oxide
semiconductor layer, in which contact resistance between the oxide
semiconductor layer and source and drain electrode layers is
reduced and electric characteristics are stabilized. Another object
is to provide a method for manufacturing the thin film transistor.
A thin film transistor using an oxide semiconductor layer is formed
in such a manner that buffer layers having higher conductivity than
the oxide semiconductor layer are formed over the oxide
semiconductor layer, source and drain electrode layers are formed
over the buffer layers, and the oxide semiconductor layer is
electrically connected to the source and drain electrode layers
with the buffer layers interposed therebetween. In addition, the
buffer layers are subjected to reverse sputtering treatment and
heat treatment in a nitrogen atmosphere, whereby the buffer layers
having higher conductivity than the oxide semiconductor layer are
obtained.
Inventors: |
ASANO; Yuji; (Atsugi,
JP) ; KOEZUKA; Junichi; (Atsugi, JP) |
Correspondence
Address: |
Robinson Intellectual Property Law Office, P.C.
3975 Fair Ridge Drive, Suite 20 North
Fairfax
VA
22033
US
|
Assignee: |
SEMICONDUCTOR ENERGY LABORATORY
CO., LTD.
Kanagawa-ken
JP
|
Family ID: |
43219212 |
Appl. No.: |
12/787813 |
Filed: |
May 26, 2010 |
Current U.S.
Class: |
257/43 ;
257/E21.461; 257/E29.296; 438/104 |
Current CPC
Class: |
H01L 21/02565 20130101;
H01L 29/42384 20130101; H01L 21/02554 20130101; H01L 29/66969
20130101; H01L 21/47635 20130101; H01L 29/78618 20130101; H01L
27/1225 20130101; H01L 27/1214 20130101; H01L 21/465 20130101; H01L
29/7869 20130101; H01L 21/02631 20130101; H01L 21/02667 20130101;
H01L 21/477 20130101; H01L 27/1288 20130101; H01L 29/78696
20130101 |
Class at
Publication: |
257/43 ; 438/104;
257/E29.296; 257/E21.461 |
International
Class: |
H01L 29/786 20060101
H01L029/786; H01L 21/36 20060101 H01L021/36 |
Foreign Application Data
Date |
Code |
Application Number |
May 29, 2009 |
JP |
2009-131161 |
Claims
1. A semiconductor device comprising: a gate electrode layer; a
gate insulating layer over the gate electrode layer; an oxide
semiconductor layer over the gate insulating layer; a first buffer
layer and a second buffer layer over the oxide semiconductor layer;
and source and drain electrode layers over the first buffer layer
and the second buffer layer, wherein the first buffer layer and the
second buffer layer have higher conductivity than the oxide
semiconductor layer and are subjected to reverse sputtering
treatment and heat treatment in a nitrogen atmosphere, and the
oxide semiconductor layer is electrically connected to the source
and drain electrode layers with the first buffer layer and the
second buffer layer interposed therebetween.
2. A semiconductor device comprising: a gate electrode layer; a
gate insulating layer over the gate electrode layer; a
high-conductive oxide semiconductor layer over the gate insulating
layer; an oxide semiconductor layer over the high-conductive oxide
semiconductor layer; a first buffer layer and a second buffer layer
over the oxide semiconductor layer; and source and drain electrode
layers over the first buffer layer and the second buffer layer,
wherein the first buffer layer and the second buffer layer have
higher conductivity than the oxide semiconductor layer and are
subjected to reverse sputtering treatment and heat treatment in a
nitrogen atmosphere, the high-conductive oxide semiconductor layer
has higher conductivity than the oxide semiconductor layer and is
subjected to reverse sputtering treatment and heat treatment in a
nitrogen atmosphere, and the oxide semiconductor layer is
electrically connected to the source and drain electrode layers
with the first buffer layer and the second buffer layer interposed
therebetween.
3. The semiconductor device according to claim 2, wherein the
high-conductive oxide semiconductor layer is formed using a
non-single-crystal film formed from an oxide semiconductor.
4. The semiconductor device according to claim 2, wherein the
high-conductive oxide semiconductor layer is formed using a
non-single-crystal film formed from an oxide semiconductor
including nitrogen.
5. The semiconductor device according to claim 1, wherein the first
buffer layer and the second buffer layer are formed using a
non-single-crystal film formed from an oxide semiconductor.
6. The semiconductor device according to claim 2, wherein the first
buffer layer and the second buffer layer are formed using a
non-single-crystal film formed from an oxide semiconductor.
7. The semiconductor device according to claim 1, wherein the first
buffer layer and the second buffer layer are formed using a
non-single-crystal film formed from an oxide semiconductor
including nitrogen.
8. The semiconductor device according to claim 2, wherein the first
buffer layer and the second buffer layer are formed using a
non-single-crystal film formed from an oxide semiconductor
including nitrogen.
9. The semiconductor device according to claim 1, wherein the oxide
semiconductor layer is formed through heat treatment in a nitrogen
atmosphere.
10. The semiconductor device according to claim 2, wherein the
oxide semiconductor layer is formed through heat treatment in a
nitrogen atmosphere.
11. The semiconductor device according to claim 1, wherein the
oxide semiconductor layer is formed through heat treatment in an
air atmosphere.
12. The semiconductor device according to claim 2, wherein the
oxide semiconductor layer is formed through heat treatment in an
air atmosphere.
13. The semiconductor device according to claim 1, wherein the
oxide semiconductor layer includes a region which is located
between the first buffer layer and the second buffer layer and
whose thickness is smaller than that of a region overlapping with
the first buffer layer and the second buffer layer.
14. The semiconductor device according to claim 2, wherein the
oxide semiconductor layer includes a region which is located
between the first buffer layer and the second buffer layer and
whose thickness is smaller than that of a region overlapping with
the first buffer layer and the second buffer layer.
15. The semiconductor device according to claim 1, wherein a width
in a channel direction of the gate electrode layer is smaller than
a width in the channel direction of the oxide semiconductor
layer.
16. The semiconductor device according to claim 2, wherein a width
in a channel direction of the gate electrode layer is smaller than
a width in the channel direction of the oxide semiconductor
layer.
17. A method for manufacturing a semiconductor device, comprising
the steps of: forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating
layer, using a sputtering method; subjecting the first oxide
semiconductor film to heat treatment; forming a second oxide
semiconductor film over the first oxide semiconductor film using a
sputtering method; subjecting the second oxide semiconductor film
to reverse sputtering treatment; subjecting the second oxide
semiconductor film to heat treatment in a nitrogen atmosphere;
etching the first oxide semiconductor film and the second oxide
semiconductor film to form an oxide semiconductor layer and a first
buffer layer; forming a conductive film over the oxide
semiconductor layer and the first buffer layer; etching the
conductive film and the first buffer layer to form source and drain
electrode layers, a second buffer layer, and a third buffer layer;
and subjecting the oxide semiconductor layer to heat treatment,
wherein the second buffer layer and the third buffer layer have
higher conductivity than the oxide semiconductor layer.
18. A method for manufacturing a semiconductor device, comprising
the steps of: forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating
layer using a sputtering method; subjecting the first oxide
semiconductor film to heat treatment; forming a second oxide
semiconductor film over the first oxide semiconductor film using a
sputtering method; subjecting the second oxide semiconductor film
to heat treatment in a nitrogen atmosphere; subjecting the second
oxide semiconductor film to reverse sputtering treatment; etching
the first oxide semiconductor film and the second oxide
semiconductor film to form an oxide semiconductor layer and a first
buffer layer; forming a conductive film over the oxide
semiconductor layer and the first buffer layer; etching the
conductive film and the first buffer layer to form source and drain
electrode layers, a second buffer layer, and a third buffer layer;
and subjecting the oxide semiconductor layer to heat treatment,
wherein the second buffer layer and the third buffer layer have
higher conductivity than the oxide semiconductor layer.
19. The method for manufacturing a semiconductor device, according
to claim 17, wherein the first oxide semiconductor film is
subjected to heat treatment in a nitrogen atmosphere.
20. The method for manufacturing a semiconductor device, according
to claim 18, wherein the first oxide semiconductor film is
subjected to heat treatment in a nitrogen atmosphere.
21. The method for manufacturing a semiconductor device, according
to claim 17, wherein the first oxide semiconductor film is
subjected to heat treatment in an air atmosphere.
22. The method for manufacturing a semiconductor device, according
to claim 18, wherein the first oxide semiconductor film is
subjected to heat treatment in an air atmosphere.
23. The method for manufacturing a semiconductor device, according
to claim 17, wherein the oxide semiconductor layer is subjected to
heat treatment in a nitrogen atmosphere.
24. The method for manufacturing a semiconductor device, according
to claim 18, wherein the oxide semiconductor layer is subjected to
heat treatment in a nitrogen atmosphere.
25. The method for manufacturing a semiconductor device, according
to claim 17, wherein the oxide semiconductor layer is subjected to
heat treatment in an air atmosphere.
26. The method for manufacturing a semiconductor device, according
to claim 18, wherein the oxide semiconductor layer is subjected to
heat treatment in an air atmosphere.
27. The method for manufacturing a semiconductor device, according
to claim 17, wherein the heat treatment of the first oxide
semiconductor film is performed at 250.degree. C. to 500.degree. C.
inclusive.
28. The method for manufacturing a semiconductor device, according
to claim 18, wherein the heat treatment of the first oxide
semiconductor film is performed at 250.degree. C. to 500.degree. C.
inclusive.
29. The method for manufacturing a semiconductor device, according
to claim 17, wherein the heat treatment of the second oxide
semiconductor film in a nitrogen atmosphere is performed at
250.degree. C. to 500.degree. C. inclusive.
30. The method for manufacturing a semiconductor device, according
to claim 18, wherein the heat treatment of the second oxide
semiconductor film in a nitrogen atmosphere is performed at
250.degree. C. to 500.degree. C. inclusive.
31. The method for manufacturing a semiconductor device, according
to claim 17, wherein the heat treatment of the oxide semiconductor
layer is performed at 250.degree. C. to 500.degree. C.
inclusive.
32. The method for manufacturing a semiconductor device, according
to claim 18, wherein the heat treatment of the oxide semiconductor
layer is performed at 250.degree. C. to 500.degree. C.
inclusive.
33. The method for manufacturing a semiconductor device, according
to claim 17, wherein the second oxide semiconductor film is formed
in an atmosphere of a rare gas and a nitrogen gas.
34. The method for manufacturing a semiconductor device, according
to claim 18, wherein the second oxide semiconductor film is formed
in an atmosphere of a rare gas and a nitrogen gas.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device
including an oxide semiconductor, a display device including the
semiconductor device, and a manufacturing method thereof.
[0003] 2. Description of the Related Art
[0004] Various metal oxides are used for a variety of applications.
Indium oxide is a well-known material and is used as a
light-transmitting electrode material which is necessary for liquid
crystal displays and the like.
[0005] Some metal oxides have semiconductor characteristics. As
metal oxides exhibiting semiconductor characteristics, for example,
tungsten oxide, tin oxide, indium oxide, zinc oxide, and the like
can be given. A thin film transistor in which such a metal oxide
having semiconductor characteristics is used for a channel
formation region has been disclosed (Patent Documents 1 to 4, and
Non-Patent Document 1).
[0006] Further, not only single-component oxides but also
multi-component oxides are known as metal oxides. For example,
homologous compound, InGaO.sub.3(ZnO).sub.m (m is a natural number)
is known as a multi-component oxide including In, Ga and Zn
(Non-Patent Documents 2 to 4).
[0007] In addition, it is confirmed that an oxide semiconductor
including such an In--Ga--Zn-based oxide can be used for a channel
layer of a transistor (Patent Document 5, and Non-Patent Documents
5 and 6).
[0008] In a conventional technique, amorphous silicon or
polycrystalline silicon has been used for a thin film transistor (a
TFT) provided for each pixel of an active matrix liquid crystal
display. However, in place of these silicon materials, attention
has been attracted to a technique for manufacturing a thin film
transistor including the aforementioned metal oxide semiconductor.
Examples of the techniques are disclosed in Patent Document 6 and
Patent Document 7, in which a thin film transistor is manufactured
with zinc oxide or an In--Ga--Zn--O-based oxide semiconductor for a
metal oxide semiconductor film and is used as a switching element
or the like of an image display device.
REFERENCES
[Patent Documents]
[0009] [Patent Document 1] Japanese Published Patent Application
No. S60-198861;
[0010] [Patent Document 2] Japanese Published Patent Application
No. H8-264794;
[0011] [Patent Document 3] Japanese Translation of PCT
International Application No. H11-505377;
[0012] [Patent Document 4] Japanese Published Patent Application
No. 2000-150900;
[0013] [Patent Document 5] Japanese Published Patent Application
No. 2004-103957;
[0014] [Patent Document 6] Japanese Published Patent Application
No. 2007-123861; and
[0015] [Patent Document 7] Japanese Published Patent Application
No. 2007-96055.
[Non-Patent Documents]
[0016] [Non-Patent Document 1] M. W. Prins, K. O. Grosse-Holz, G.
Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R.
M. Wolf, "A ferroelectric transparent thin-film transistor", Appl.
Phys. Lett., 17 Jun. 1996, Vol. 68 pp. 3650-3652;
[0017] [Non-Patent Document 2] M. Nakamura, N. Kimizuka, and T.
Mohri, "The Phase Relations in the
In.sub.2O.sub.3--Ga.sub.2ZnO.sub.4--ZnO System at 1350.degree. C.",
J. Solid State Chem., 1991, Vol. 93, pp. 298-315;
[0018] [Non-Patent Document 3] N. Kimizuka, M. Isobe, and M.
Nakamura, "Syntheses and Single-Crystal Data of Homologous
Compounds, In.sub.2O.sub.3(ZnO).sub.m (m=3, 4, and 5),
InGaO.sub.3(ZnO).sub.3, and Ga.sub.2O.sub.3(ZnO).sub.m (m=7, 8, 9,
and 16) in the In.sub.2O.sub.3--ZnGa.sub.2O.sub.4--ZnO System", J.
Solid States Chem., 1995, Vol. 116, pp. 170-178;
[0019] [Non-Patent Document 4] M. Nakamura, N. Kimizuka, T. Mohri,
and M. Isobe, "Syntheses and crystal structures of new homologous
compounds, indium iron zinc oxides (InFeO3(ZnO)m) (m is a natural
number) and related compounds", KOTAI BUTSURI (SOLID STATE
PHYSICS), 1993, Vol. 28, No. 5, pp. 317-327;
[0020] [Non-Patent Document 5] K. Nomura, H. Ohta, K. Ueda, T.
Kamiya, M. Hirano, and H. Hosono, "Thin-film transistor fabricated
in single-crystalline transparent oxide semiconductor", SCIENCE,
2003, Vol. 300, pp. 1269-1272; and
[0021] [Non-Patent Document 6] K. Nomura, H. Ohta, A. Takagi, T.
Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of
transparent flexible thin-film transistors using amorphous oxide
semiconductors", NATURE, 2004, Vol. 432 pp. 488-492.
SUMMARY OF THE INVENTION
[0022] An object of an embodiment of the present invention is to
provide a thin film transistor using an oxide semiconductor layer,
in which contact resistance between the oxide semiconductor layer
and source and drain electrode layers is reduced and electric
characteristics are stabilized. Another object of an embodiment of
the present invention is to provide a method for manufacturing the
thin film transistor. Another object of an embodiment of the
present invention is to provide a display device including the thin
film transistor.
[0023] In order to achieve the above object, in an embodiment of
the present invention, a thin film transistor using an oxide
semiconductor layer is formed in such a manner that buffer layers
having higher conductivity than the oxide semiconductor layer are
formed over the oxide semiconductor layer, source and drain
electrode layers are formed over the buffer layers, and the oxide
semiconductor layer is electrically connected to the source and
drain electrode layers with the buffer layers interposed
therebetween. Further, in order to achieve the above object, in
another embodiment of the present invention, the buffer layers over
the oxide semiconductor layer are subjected to reverse sputtering
treatment and heat treatment in a nitrogen atmosphere, whereby the
buffer layers having higher conductivity than the oxide
semiconductor layer are obtained.
[0024] An embodiment of the present invention is a semiconductor
device including a gate electrode layer, a gate insulating layer
over the gate electrode layer, an oxide semiconductor layer over
the gate insulating layer, a first buffer layer and a second buffer
layer over the oxide semiconductor layer, and source and drain
electrode layers over the first buffer layer and the second buffer
layer. The first buffer layer and the second buffer layer have
higher conductivity than the oxide semiconductor layer and are
subjected to reverse sputtering treatment and heat treatment in a
nitrogen atmosphere, and the oxide semiconductor layer is
electrically connected to the source and drain electrode layers
with the first buffer layer and the second buffer layer interposed
therebetween.
[0025] Another embodiment of the present invention is a
semiconductor device including a gate electrode layer, a gate
insulating layer over the gate electrode layer, a high-conductive
oxide semiconductor layer over the gate insulating layer, an oxide
semiconductor layer over the high-conductive oxide semiconductor
layer, a first buffer layer and a second buffer layer over the
oxide semiconductor layer, and source and drain electrode layers
over the first buffer layer and the second buffer layer. The first
buffer layer and the second buffer layer have higher conductivity
than the oxide semiconductor layer and are subjected to reverse
sputtering treatment and heat treatment in a nitrogen atmosphere,
the high-conductive oxide semiconductor layer has higher
conductivity than the oxide semiconductor layer and is subjected to
reverse sputtering treatment and heat treatment in a nitrogen
atmosphere, and the oxide semiconductor layer is electrically
connected to the source and drain electrode layers with the first
buffer layer and the second buffer layer interposed
therebetween.
[0026] Note that it is preferable that the first buffer layer and
the second buffer layer are formed using a non-single-crystal film
formed from an oxide semiconductor. Alternatively, it is preferable
that the first buffer layer and the second buffer layer are formed
using a non-single-crystal film formed from an oxide semiconductor
including nitrogen. It is preferable that the high-conductive oxide
semiconductor layer is formed using a non-single-crystal film
formed from an oxide semiconductor. Alternatively, it is preferable
that the high-conductive oxide semiconductor layer is formed using
a non-single-crystal film formed from an oxide semiconductor
including nitrogen.
[0027] Further, the oxide semiconductor layer may be formed through
heat treatment in a nitrogen atmosphere. Alternatively, the oxide
semiconductor layer may be formed through heat treatment in an air
atmosphere. The oxide semiconductor layer may include a region
which is located between the first buffer layer and the second
buffer layer and whose thickness is smaller than that of a region
overlapping with the first buffer layer and the second buffer
layer. A width in a channel direction of the gate electrode layer
may be smaller than a width in the channel direction of the oxide
semiconductor layer.
[0028] Another embodiment of the present invention is a method for
manufacturing a semiconductor device, including the steps of
forming a gate electrode layer over a substrate, forming a gate
insulating layer over the gate electrode layer, forming a first
oxide semiconductor film over the gate insulating layer using a
sputtering method, subjecting the first oxide semiconductor film to
heat treatment, forming a second oxide semiconductor film over the
first oxide semiconductor film using a sputtering method,
subjecting the second oxide semiconductor film to reverse
sputtering treatment, subjecting the second oxide semiconductor
film to heat treatment in a nitrogen atmosphere, etching the first
oxide semiconductor film and the second oxide semiconductor film to
form an oxide semiconductor layer and a first buffer layer, forming
a conductive film over the oxide semiconductor layer and the first
buffer layer, etching the conductive film and the first buffer
layer to form source and drain electrode layers, a second buffer
layer, and a third buffer layer, and subjecting the oxide
semiconductor layer to heat treatment. The second buffer layer and
the third buffer layer have higher conductivity than the oxide
semiconductor layer.
[0029] Another embodiment of the present invention is a method for
manufacturing a semiconductor device, including the steps of
forming a gate electrode layer over a substrate, forming a gate
insulating layer over the gate electrode layer, forming a first
oxide semiconductor film over the gate insulating layer using a
sputtering method, subjecting the first oxide semiconductor film to
heat treatment, forming a second oxide semiconductor film over the
first oxide semiconductor film using a sputtering method,
subjecting the second oxide semiconductor film to heat treatment in
a nitrogen atmosphere; subjecting the second oxide semiconductor
film to reverse sputtering treatment, etching the first oxide
semiconductor film and the second oxide semiconductor film to form
an oxide semiconductor layer and a first buffer layer, forming a
conductive film over the oxide semiconductor layer and the first
buffer layer, etching the conductive film and the first buffer
layer to form source and drain electrode layers, a second buffer
layer, and a third buffer layer, and subjecting the oxide
semiconductor layer to heat treatment. The second buffer layer and
the third buffer layer have higher conductivity than the oxide
semiconductor layer.
[0030] Note that the first oxide semiconductor film may be
subjected to heat treatment in a nitrogen atmosphere.
Alternatively, the first oxide semiconductor film may be subjected
to heat treatment in an air atmosphere. In addition, the oxide
semiconductor layer may be subjected to heat treatment in a
nitrogen atmosphere. Alternatively, the oxide semiconductor layer
may be subjected to heat treatment in an air atmosphere. It is
preferable that the heat treatment of the first oxide semiconductor
film is performed at 250.degree. C. to 500.degree. C. inclusive. It
is preferable that the heat treatment in a nitrogen atmosphere of
the second oxide semiconductor film is performed at 250.degree. C.
to 500.degree. C. inclusive. It is preferable that the heat
treatment of the oxide semiconductor layer is performed at
250.degree. C. to 500.degree. C. inclusive. It is preferable that
the second oxide semiconductor film is formed in an atmosphere of a
rare gas and a nitrogen gas.
[0031] Note that the ordinal numbers such as "first" and "second"
in this specification are used for convenience and do not denote
the order of steps and the stacking order of layers. In addition,
the ordinal numbers in this specification do not denote particular
names which specify the invention.
[0032] In this specification, a "semiconductor device" generally
refers to a device which can function by utilizing semiconductor
characteristics; an electrooptic device, a semiconductor circuit,
and an electronic device are all included in semiconductor
devices.
[0033] According to an embodiment of the present invention, in a
thin film transistor using an oxide semiconductor layer, buffer
layers having higher conductivity than the oxide semiconductor
layer are formed over the oxide semiconductor layer, and source and
drain electrode layers are formed over the buffer layers, which
results in that the oxide semiconductor layer can be electrically
connected to the source and drain electrode layers with the buffer
layers interposed therebetween, contact resistance between the
oxide semiconductor layer and the source and drain electrode layers
can be reduced, and electric characteristics can be stabilized. In
addition, the buffer layers are subjected to reverse sputtering
treatment and heat treatment in a nitrogen atmosphere, whereby the
buffer layers having higher conductivity than the oxide
semiconductor layer can be obtained.
[0034] By using the thin film transistor for a pixel portion and a
driver circuit portion of a display device, the display device can
have stable electric characteristics and high reliability.
BRIEF DESCRIPTION OF THE DRAWINGS
[0035] FIGS. 1A and 1B illustrate a semiconductor device according
to an embodiment of the present invention;
[0036] FIGS. 2A to 2C illustrate a method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0037] FIGS. 3A to 3C illustrate the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0038] FIGS. 4A and 4B illustrate the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0039] FIGS. 5A and 5B illustrate the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0040] FIGS. 6A to 6C illustrate a method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0041] FIG. 7 illustrates the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0042] FIG. 8 illustrates the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0043] FIG. 9 illustrates the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0044] FIG. 10 illustrates the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0045] FIG. 11 illustrates the method for manufacturing a
semiconductor device according to an embodiment of the present
invention;
[0046] FIGS. 12A1 and 12A2 and FIGS. 12B1 and 12B2 illustrate a
semiconductor device according to an embodiment of the present
invention;
[0047] FIGS. 13A and 13B illustrate a semiconductor device
according to an embodiment of the present invention;
[0048] FIGS. 14A to 14C illustrate a semiconductor device according
to an embodiment of the present invention;
[0049] FIGS. 15A and 15B are block diagrams of a semiconductor
device;
[0050] FIG. 16 illustrates a structure of a signal line driver
circuit;
[0051] FIG. 17 is a timing chart showing operation of a signal line
driver circuit;
[0052] FIG. 18 is a timing chart showing operation of a signal line
driver circuit;
[0053] FIG. 19 is a diagram showing a structure of a shift
register;
[0054] FIG. 20 illustrate a connection structure of a flip-flop in
FIG. 19.
[0055] FIGS. 21A1 and 21A2 and FIG. 21B illustrate a semiconductor
device according to an embodiment of the present invention;
[0056] FIG. 22 illustrates a semiconductor device according to an
embodiment of the present invention;
[0057] FIG. 23 illustrates a semiconductor device according to an
embodiment of the present invention;
[0058] FIG. 24 illustrates a pixel equivalent circuit of a
semiconductor device according to an embodiment of the present
invention;
[0059] FIGS. 25A to 25C each illustrate a semiconductor device
according to an embodiment of the present invention;
[0060] FIGS. 26A and 26B illustrate a semiconductor device
according to an embodiment of the present invention;
[0061] FIGS. 27A and 27B illustrate examples of usage patterns of
electronic paper;
[0062] FIG. 28 is an external view of an example of an electronic
book reader;
[0063] FIGS. 29A and 29B are external views illustrating an example
of a television set and an example of a digital photo frame,
respectively;
[0064] FIGS. 30A and 30B are external views illustrating examples
of amusement machines;
[0065] FIGS. 31A and 31B are external views illustrating examples
of mobile phones; and
[0066] FIGS. 32A and 32B illustrate a semiconductor device
according to an embodiment of the present invention.
[0067] Embodiments will be described in detail with reference to
the drawings. However, the present invention is not limited to the
following description, and it is easily understood by those skilled
in the art that modes and details can be variously changed without
departing from the spirit and the scope of the present invention.
Therefore, the present invention to be disclosed is not interpreted
as being limited to the description of Embodiments below. Note that
in the structure of the present invention described below,
reference numerals indicating the same portions and portions having
a similar function are used in common in different drawings, and
repeated descriptions thereof are omitted.
Embodiment 1
[0068] In this embodiment, a structure of a thin film transistor
will be described with reference to FIGS. 1A and 1B.
[0069] A thin film transistor having a bottom-gate structure of
this embodiment is illustrated in FIGS. 1A and 1B. FIG. 1A is a
cross-sectional view, and FIG. 1B is a plan view. FIG. 1A is a
cross-sectional view taken along line A1-A2 of FIG. 1B.
[0070] In the thin film transistor illustrated in FIGS. 1A and 1B,
a gate electrode layer 101 is provided over a substrate 100, a gate
insulating layer 102 is provided over the gate electrode layer 101,
an oxide semiconductor layer 103 is provided over the gate
insulating layer 102, buffer layers 106a and 106b are provided over
the oxide semiconductor layer 103, and source and drain electrode
layers 105a and 105b are provided over the buffer layers 106a and
106b. In other words, the oxide semiconductor layer 103 and the
source and drain electrode layers 105a and 105b are electrically
connected to each other with the buffer layers 106a and 106b
interposed therebetween. Here, the buffer layers 106a and 106b have
higher conductivity than the oxide semiconductor layer 103. In
addition, the oxide semiconductor layer 103 includes a region
between the buffer layers 106a and 106b. The region has a thickness
smaller than a region overlapping with the buffer layers 106a and
106b.
[0071] The gate electrode layer 101 can be formed with a single
layer or a stacked layer using any of a metal material such as
aluminum, copper, molybdenum, titanium, chromium, tantalum,
tungsten, neodymium, or scandium; an alloy material including any
of the metal materials as its main component; or a nitride
including any of the metal materials as its component. The gate
electrode layer 101 is preferably formed using a low-resistance
conductive material such as aluminum or copper; however, since the
low-resistance conductive material has disadvantages such as low
heat resistance or a tendency to be corroded, it is preferably used
in combination with a heat-resistant conductive material. As the
heat-resistant conductive material, molybdenum, titanium, chromium,
tantalum, tungsten, neodymium, scandium, or the like is used.
[0072] For example, a stacked-layer structure of the gate electrode
layer 101 is preferably a two-layer structure in which a molybdenum
layer is stacked over an aluminum layer, a two-layer structure in
which a molybdenum layer is stacked over a copper layer, a
two-layer structure in which a titanium nitride layer or a tantalum
nitride layer is stacked over a copper layer, or a two-layer
structure in which a titanium nitride layer and a molybdenum layer
are stacked. Alternatively, a three-layer structure in which a
tungsten layer or a tungsten nitride layer, an aluminum-silicon
alloy layer or an aluminum-titanium alloy layer, and a titanium
nitride layer or a titanium layer are stacked is preferably
used.
[0073] For the oxide semiconductor layer 103, a non-single-crystal
film formed from an In--Ga--Zn--O-based, In--Sn--Zn--O-based,
Ga--Sn--Zn--O-based, In--Zn--O-based, Sn--Zn--O-based,
In--Sn--O-based, Ga--Zn--O-based, In--O-based, Sn--O-based, or
Zn--O-based oxide semiconductor.
[0074] In this specification, an In--Ga--Zn--O-based oxide
semiconductor is an oxide semiconductor including at least In, Ga,
and Zn. An In--Sn--Zn--O-based oxide semiconductor is an oxide
semiconductor including at least In, Sn, and Zn. A
Ga--Sn--Zn--O-based oxide semiconductor is an oxide semiconductor
including at least Ga, Sn, and Zn. An In--Zn--O-based oxide
semiconductor is an oxide semiconductor including at least In and
Zn. A Sn--Zn--O-based oxide semiconductor is an oxide semiconductor
including at least Sn and Zn. An In--Sn--O-based oxide
semiconductor is an oxide semiconductor including at least In and
Sn. A Ga--Zn--O-based oxide semiconductor is an oxide semiconductor
including at least Ga and Zn. An In--O-based oxide semiconductor is
an oxide semiconductor including at least In. A Sn--O-based oxide
semiconductor is an oxide semiconductor including at least Sn. A
Zn--O-based oxide semiconductor is an oxide semiconductor including
at least Zn. The above oxide semiconductor may include one or more
of metal elements of Fe, Ni, Mn, and Co.
[0075] It is preferable that an oxide semiconductor film which is
formed using a sputtering method in an atmosphere of an oxygen gas
and a rare gas such as argon is preferably used as the oxide
semiconductor layer 103. When the oxide semiconductor film is used,
the conductivity of the oxide semiconductor layer 103 can be
reduced and off current can be reduced. In addition, it is
preferable that the oxide semiconductor film used for the oxide
semiconductor layer 103 is subjected to heat treatment. By this
heat treatment, rearrangement at an atomic level of the oxide
semiconductor film is performed and distortion in a crystal
structure, which interrupts carrier movement, is released.
Accordingly, the mobility of the oxide semiconductor layer 103 can
be improved. In addition, this heat treatment enables reduction in
the amount of hydrogen that forms excess carriers in the oxide
semiconductor layer 103. At this time, in the case where the heat
treatment is performed in a nitrogen atmosphere, the conductivity
of the oxide semiconductor layer 103 can be increased. When the
oxide semiconductor layer 103 is used as an active layer of the
thin film transistor, the thin film transistor having large on
current is obtained. Here, an atmosphere including a nitrogen gas
at 80 vol % to 100 vol % and a rare gas such as argon at 0 vol % to
20 vol % is preferably employed as the nitrogen atmosphere. In
addition, when the heat treatment is performed in an air
atmosphere, the conductivity of the oxide semiconductor layer 103
can be reduced. When the oxide semiconductor layer 103 is used as
the active layer of the thin film transistor, the thin film
transistor having small off current is obtained. As the air
atmosphere, an atmosphere including an oxygen gas at 15 vol % to 25
vol % and a nitrogen gas at 75 vol % to 85 vol % is preferably
employed. Accordingly, the atmosphere at the heat treatment may be
changed in accordance with usage of the oxide semiconductor
layer.
[0076] The oxide semiconductor layer 103 includes at least an
amorphous component. A crystal grain (a nanocrystal) is included in
an amorphous structure in some cases. The crystal grain
(nanocrystal) has a diameter of 1 nm to 10 nm, typically,
approximately 2 nm to 4 nm Note that the crystal state is evaluated
by X-ray diffraction (XRD) analysis.
[0077] The thickness of the oxide semiconductor layer 103 is 10 nm
to 300 nm, preferably 20 nm to 100 nm.
[0078] An insulating oxide may be included in the oxide
semiconductor layer 103. Here, as the insulating oxide, silicon
oxide is preferable. Further, nitrogen may be added to the
insulating oxide. In this case, the oxide semiconductor layer 103
is preferably formed using a sputtering method using a target
including SiO.sub.2 at 0.1% by weight to 30% by weight inclusive,
more preferably at 1% by weight to 15% by weight inclusive.
[0079] By inclusion of the insulating oxide such as silicon oxide
in the oxide semiconductor layer 103, crystallization of the oxide
semiconductor layer 103 can be suppressed and the oxide
semiconductor layer 103 can have an amorphous structure.
Crystallization of the oxide semiconductor layer 103 is suppressed
and the oxide semiconductor layer 103 has an amorphous structure,
whereby variation in characteristics of the thin film transistor
can be reduced and the characteristics of the thin film transistor
can be stabilized. Further, by inclusion the insulating oxide such
as silicon oxide in the oxide semiconductor layer 103,
crystallization of the oxide semiconductor layer 103 or generation
of a microcrystalline grain in the oxide semiconductor layer 103
can be suppressed even when heat treatment is performed at
300.degree. C. to 600.degree. C.
[0080] The buffer layers 106a and 106b function as source and drain
regions of the thin film transistor. In a manner similar to the
case of the oxide semiconductor layer 103, the buffer layers 106a
and 106b can be formed using a non-single-crystal film formed from
an In--Ga--Zn--O-based, In--Sn--Zn--O-based, Ga--Sn--Zn--O-based,
In--Zn--O-based, Sn--Zn--O-based, In--Sn--O-based, Ga--Zn--O-based,
In--O-based, Sn--O-based, or Zn--O-based oxide semiconductor. In
addition, the buffer layers 106a and 106b are preferably formed
using a non-single-crystal film formed from an
In--Ga--Zn--O--N-based, Ga--Zn--O--N-based, Zn--O--N-based, or
Sn--Zn--O--N-based oxide semiconductor, which includes nitrogen. In
addition, the non-single-crystal film may include insulating oxide
such as silicon oxide.
[0081] In this specification, an In--Ga--Zn--O--N-based oxide
semiconductor is an oxide semiconductor including at least In, Ga,
Zn, and N. A Ga--Zn--O--N-based oxide semiconductor is an oxide
semiconductor including at least Ga, Zn, and N. A Zn--O--N-based
oxide semiconductor is an oxide semiconductor including at least Zn
and N. A Sn--Zn--O--N-based oxide semiconductor is an oxide
semiconductor including at least Sn, Zn, and N.
[0082] It is preferable that the buffer layers 106a and 106b are
formed using a sputtering method in an atmosphere of a rare gas
such as argon and a nitrogen gas. By forming the buffer layers 106a
and 106b in this manner, the conductivity of the buffer layers 106a
and 106b can be increased. In addition, when reverse sputtering
treatment and heat treatment in a nitrogen atmosphere are performed
on the formed oxide semiconductor film, the conductivity of the
buffer layers 106a and 106b can be further increased. Here, an
atmosphere including a nitrogen gas at 80 vol % to 100 vol % and a
rare gas such as argon at 0 vol % to 20 vol % is preferably
employed as the nitrogen atmosphere.
[0083] In addition, in the buffer layers 106a and 106b, the
conductivity may be changed in stages or successively from a
surface side toward the substrate side. Further, high resistance
regions may be formed at edge portions of the buffer layers 106a
and 106b.
[0084] The buffer layers 106a and 106b include at least an
amorphous component. A crystal grain (a nanocrystal) is included in
an amorphous structure in some cases. The crystal grain
(nanocrystal) has a diameter of 1 nm to 10 nm, typically,
approximately 2 nm to 4 nm Note that the crystal state is evaluated
by X-ray diffraction (XRD) analysis.
[0085] The thickness of the oxide semiconductor film used for the
buffer layers 106a and 106b is 5 nm to 20 nm Needless to say, when
the film includes a crystal grain, the diameter of the crystal
grain does not exceed the thickness of the film.
[0086] The buffer layers 106a and 106b having higher conductivity
than the oxide semiconductor layer 103 are formed over the oxide
semiconductor layer 103, which results in that the oxide
semiconductor layer 103 can be electrically connected to the source
and drain electrode layers 105a and 105b with the buffer layers
106a and 106b interposed therebetween. Thus, an ohmic contact is
formed between the oxide semiconductor layer 103 and the source and
drain electrode layers 105a and 105b; accordingly, electric
characteristics of the thin film transistor can be stabilized.
[0087] The source and drain electrode layers 105a and 105b can be
formed using a metal material such as aluminum, copper, molybdenum,
titanium, chromium, tantalum, tungsten, neodymium, or scandium; an
alloy material including any of the metal materials as its main
component; or nitride including any of the metal materials as its
component. The source and drain electrode layers 105a and 105b are
preferably formed using a low-resistance conductive material such
as aluminum or copper; however, since the low-resistance conductive
material has disadvantages such as low heat resistance or a
tendency to be corroded, it is preferably used in combination with
a heat-resistant conductive material. As the heat-resistant
conductive material, molybdenum, titanium, chromium, tantalum,
tungsten, neodymium, scandium, or the like is used.
[0088] For example, it is preferable that the source and drain
electrode layers 105a and 105b are formed with a three-layer
structure in which a first conductive layer and a third conductive
layer are formed using titanium that is a heat-resistant conductive
material, and a second conductive layer is formed using an aluminum
alloy including neodymium that has low resistance. By employing
such a structure for the source and drain electrode layers 105a and
105b, generation of a hillock can be reduced while low resistance
of aluminum is utilized. Note that the structure of the source and
drain electrode layers 105a and 105b is not limited thereto.
Alternatively, a single-layer structure, a two-layer structure, or
a structure of four or more layers may be employed.
[0089] Further, although the thin film transistor having an
inverted staggered structure illustrated in FIGS. 1A and 1B has the
gate electrode layer 101 having a width in a channel direction,
which is smaller than that of the oxide semiconductor layer 103,
the thin film transistor described in this embodiment is not
limited thereto. As illustrated in FIGS. 13A and 13B, a gate
electrode layer 201 having a width in a channel direction, which is
larger than that of the oxide semiconductor layer 103 may be used.
Note that FIG. 13A is a cross-sectional view taken along line A1-A2
in FIG. 13B. By employing such a structure, the oxide semiconductor
layer 103 can be protected from light by the gate electrode layer
201. Thus, reliability of the thin film transistor can be improved.
Note that except the gate electrode layer 201, reference numerals
of parts of the thin film transistor illustrated in FIGS. 13A and
13B are the same as those used for the thin film transistor
illustrated in FIGS. 1A and 1B.
[0090] With the above structure, in a thin film transistor using an
oxide semiconductor layer, buffer layers having higher conductivity
than the oxide semiconductor layer are formed over the oxide
semiconductor layer, and source and drain electrode layers are
formed over the buffer layers, which results in that the oxide
semiconductor layer can be electrically connected to the source and
drain electrode layers with the buffer layers interposed
therebetween, contact resistance between the oxide semiconductor
layer and the source and drain electrode layers can be reduced, and
electric characteristics can be stabilized. In addition, by
subjecting the buffer layers to reverse sputtering treatment and
heat treatment in a nitrogen atmosphere, the buffer layers having
higher conductivity than the oxide semiconductor layer can be
obtained.
[0091] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 2
[0092] In this embodiment, a manufacturing process of a display
device including the thin film transistor described in Embodiment 1
will be described with reference to FIGS. 2A to 2C, FIGS. 3A to 3C,
FIGS. 4A and 4B, FIGS. 5A and 5B, FIGS. 6A to 6C, FIG. 7, FIG. 8,
FIG. 9, FIG. 10, and FIG. 11. FIGS. 2A to 2C, FIGS. 3A to 3C, FIGS.
4A and 4B, FIGS. 5A and 5B, and FIGS. 6A to 6C are cross-sectional
views and FIG. 7, FIG. 8, FIG. 9, FIG. 10, and FIG. 11 are plan
views. Note that A1-A2 and B1-B2 of FIGS. 2A to 2C, FIGS. 3A to 3C,
FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS. 6A to 6C correspond to
cross sections taken along lines A1-A2 and B1-B2 of FIG. 7, FIG. 8,
FIG. 9, FIG. 10, and FIG. 11, respectively.
[0093] First, a substrate 100 is prepared. As the substrate 100,
the following can be used: an alkali-free glass substrate
manufactured by a fusion method or a floating method, such as a
barium borosilicate glass substrate, an aluminoborosilicate glass
substrate, or an aluminosilicate glass substrate; a ceramic
substrate; a heat-resistant plastic substrate that can resist a
process temperature of this manufacturing process; or the like.
Alternatively, a metal substrate such as a stainless steel alloy
substrate which is provided with an insulating film over the
surface may also be used. As the substrate 100, a substrate having
a size of 320 mm.times.400 mm, 370 mm.times.470 mm, 550
mm.times.650 mm, 600 mm.times.720 mm, 680 mm.times.880 mm, 730
mm.times.920 mm, 1000 mm.times.1200 mm, 1100 mm.times.1250 mm, 1150
mm.times.1300 mm, 1500 mm.times.1800 mm, 1900 mm.times.2200 mm,
2160 mm.times.2460 mm, 2400 mm.times.2800 mm, 2850 mm.times.3050
mm, or the like can be used.
[0094] Further, an insulating film may be provided as a base film
over the substrate 100. The base film may be formed with a single
layer or a stacked layer using any of a silicon oxide film, a
silicon nitride film, a silicon oxynitride film, and a silicon
nitride oxide film by a CVD method, a sputtering method, or the
like. In the case where a substrate including mobile ions, such as
a glass substrate, is used as the substrate 100, a film including
nitrogen such as a silicon nitride film or a silicon nitride oxide
film is used as the base film, whereby the mobile ions can be
prevented from entering the oxide semiconductor layer.
[0095] A conductive film to be a gate wiring including the gate
electrode layer 101, a capacitor wiring 108, and a first terminal
121 is formed over the entire surface of the substrate 100 using a
sputtering method or a vacuum evaporation method. Next, a
photolithography process is performed and a resist mask is formed.
Then, unnecessary portions are removed by etching, whereby wirings
and an electrode (the gate wiring including the gate electrode
layer 101, the capacitor wiring 108, and the first terminal 121)
are formed. At this time, etching is preferably performed so that
at least an edge portion of the gate electrode layer 101 can be
tapered in order to prevent disconnection. A cross-sectional view
at this stage is illustrated in FIG. 2A. Note that a top view at
this stage corresponds to FIG. 7.
[0096] The gate wiring including the gate electrode layer 101, the
capacitor wiring 108, and the first terminal 121 in a terminal
portion can be formed with a single layer or a stacked layer using
the conductive material described in Embodiment 1.
[0097] Here, the gate electrode layer 101 may be formed so that a
width in a channel direction of the gate electrode layer 101 is
larger than that of the oxide semiconductor layer 103 which is to
be formed in a later step. By forming the gate electrode layer 101
in this manner, such a thin film transistor illustrated in FIGS.
13A and 13B can be formed. In such a transistor illustrated in
FIGS. 13A and 13B, the oxide semiconductor layer 103 can be
protected from light by the gate electrode layer 201.
[0098] Next, a gate insulating layer 102 is formed over the entire
surface of the gate electrode layer 101, the capacitor wiring 108,
and the first terminal 121. The gate insulating layer 102 is formed
to a thickness of 50 nm to 250 nm by a CVD method, a sputtering
method, or the like.
[0099] For example, the gate insulating layer 102 is formed to a
thickness of 100 nm using a silicon oxide film by a CVD method or a
sputtering method. Needless to say, the gate insulating layer 102
is not limited to such a silicon oxide film, and other insulating
films such as a silicon oxynitride film, a silicon nitride oxide
film, a silicon nitride film, an aluminum oxide film, or a tantalum
oxide film may be used to form a single-layer structure or a
stacked-layer structure.
[0100] Alternatively, the gate insulating layer 102 can be formed
using a silicon oxide layer by a CVD method using an organosilane
gas. As the organosilane gas, a silicon-containing compound such as
tetraethoxysilane (TEOS) (chemical formula:
Si(OC.sub.2H.sub.5).sub.4), tetramethylsilane (TMS) (chemical
formula: Si(CH.sub.3).sub.4), tetramethylcyclotetrasiloxane
(TMCTS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane
(HMDS), triethoxysilane (chemical formula:
SiH(OC.sub.2H.sub.5).sub.3), or trisdimethylaminosilane (chemical
formula: SiH(N(CH.sub.3).sub.2).sub.3) can be used.
[0101] Alternatively, the gate insulating layer 102 may be formed
using one kind of oxide, nitride, oxynitride, and nitride oxide of
aluminum, yttrium, or hafnium; or a compound including at least two
or more kinds thereof.
[0102] Note that in this specification, oxynitride refers to a
substance that includes more oxygen atoms than nitrogen atoms and
nitride oxide refers to a substance that includes more nitrogen
atoms than oxygen atoms. For example, a silicon oxynitride film
means a film that includes more oxygen atoms than nitrogen atoms,
and oxygen, nitrogen, silicon, and hydrogen at concentrations of 50
at. % to 70 at. %, 0.5 at. % to 15 at. %, 25 at. % to 35 at. %, and
0.1 at. % to 10 at. %, respectively, when they are measured by RBS
(Rutherford Backscattering Spectrometry) and HFS (Hydrogen Forward
Scattering). Further, a silicon nitride oxide film means a film
that includes more nitrogen atoms than oxygen atoms and, in the
case where measurements are performed using RBS and HFS, includes
oxygen, nitrogen, silicon, and hydrogen at concentrations of 5 at.
% to 30 at. %, 20 at. % to 55 at. %, 25 at. % to 35 at. %, and 10
at. % to 30 at. %, respectively. Note that percentages of nitrogen,
oxygen, silicon, and hydrogen fall within the ranges given above,
where the total number of atoms contained in the silicon oxynitride
film or the silicon nitride oxide film is defined as 100 at. %.
[0103] Note that before an oxide semiconductor film to be the oxide
semiconductor layer 103 is formed, reverse sputtering by which
plasma is generated by introduction of an argon gas into a chamber
where the substrate 100 is placed is preferably performed to remove
powder substances (also referred to as particles or dust) which are
generated at the time of film formation and attached to a surface
of the gate insulating layer. By reverse sputtering, planarity of
the surface of the gate insulating layer 102 can be improved. The
reverse sputtering refers to a method in which an RF power source
is used for application of voltage to a substrate side in an argon
atmosphere and plasma is generated in the vicinity of the substrate
to modify a surface. Note that instead of an argon atmosphere, a
nitrogen atmosphere, a helium atmosphere, or the like may be used.
Alternatively, an argon atmosphere to which oxygen, N.sub.2O, or
the like is added may be used. Further alternatively, an argon
atmosphere to which Cl.sub.2, CF.sub.4, or the like is added may be
used. After the reverse sputtering treatment, a first oxide
semiconductor film 111 is formed without exposure to the air,
whereby dust or moisture can be prevented from attaching to an
interface between the gate insulating layer 102 and the oxide
semiconductor layer 103.
[0104] Next, the first oxide semiconductor film 111 to be the oxide
semiconductor layer 103 is formed over the gate insulating layer
102 using a sputtering method in an atmosphere of an oxygen gas and
a rare gas such as argon. Alternatively, the film formation may be
performed in an atmosphere including only a rare gas such as argon
without an oxygen gas. As the first oxide semiconductor film 111,
the oxide semiconductor to be the oxide semiconductor layer 103,
which is described in Embodiment 1, can be used. Specifically, for
example, the film formation is performed by sputtering with use of
an oxide semiconductor target including In, Ga, and Zn
(In.sub.2O.sub.3:Ga.sub.2O.sub.3:ZnO=1:1:1) of 8 inches in
diameter, under the conditions that the distance between the
substrate and the target is 60 mm, the pressure is 0.4 Pa, the
direct current (DC) power is 0.5 kW, the flow rate ratio of
Ar:O.sub.2 in a deposition gas is 30:15 (sccm), and the deposition
temperature is room temperature. As for the target, Ga.sub.2O.sub.3
and ZnO in a pellet state may be disposed on a disk of 8 inches in
diameter which includes In.sub.2O.sub.3. Note that a pulse direct
current (DC) power source is preferable because powder substances
(also referred to as particles or dust) generated in film formation
can be reduced and the film thickness can be uniform. The thickness
of the first oxide semiconductor film 111 is set to 10 nm to 300
nm, preferably 20 nm to 100 nm.
[0105] The target may include insulating oxide so that the first
oxide semiconductor film 111 includes the insulating oxide. Here,
as the insulating oxide, silicon oxide is preferable. Further,
nitrogen may be added to the insulating oxide. When the first oxide
semiconductor film 111 is formed, it is preferable to use an oxide
semiconductor target including SiO.sub.2 at 0.1% by weight to 30%
by weight inclusive, preferably at 1% by weight to 15% by weight
inclusive.
[0106] The first oxide semiconductor film 111 includes insulating
oxide such as silicon oxide, whereby the oxide semiconductor to be
formed is made amorphous easily. In addition, by inclusion of
insulating oxide such as silicon oxide, crystallization of the
oxide semiconductor layer 103 can be suppressed when heat treatment
is performed on the oxide semiconductor in a later step.
[0107] A chamber used for forming the first oxide semiconductor
film 111 may be the same or different from the chamber in which the
reverse sputtering has been performed.
[0108] Examples of a sputtering method include an RF sputtering
method in which a high-frequency power source is used as a
sputtering power source, a DC sputtering method, and a pulsed DC
sputtering method in which a bias is applied in a pulsed manner. An
RF sputtering method is mainly used in the case where an insulating
film is formed, and a DC sputtering method is mainly used in the
case where a metal film is formed.
[0109] In addition, there are a sputtering apparatus provided with
a magnet system inside the chamber and used for a magnetron
sputtering method, and a sputtering apparatus used for an ECR
sputtering method in which plasma generated with use of microwaves
is used without using glow discharge.
[0110] Furthermore, as a deposition method by sputtering, there are
also a reactive sputtering method in which a target substance and a
sputtering gas component are chemically reacted with each other
during deposition to form a thin compound film thereof, and a bias
sputtering method in which voltage is also applied to a substrate
during deposition.
[0111] Next, the first oxide semiconductor film 111 is subjected to
heat treatment. The heat treatment is performed at 200.degree. C.
to 600.degree. C. inclusive, preferably 250.degree. C. to
500.degree. C. inclusive. For example, the heat treatment is
performed on the substrate 100 set in a furnace in a nitrogen
atmosphere at 350.degree. C. for about one hour. By this heat
treatment, rearrangement at an atomic level of the first oxide
semiconductor film 111 is performed and distortion in a crystal
structure, which interrupts carrier movement, can be released.
Accordingly, mobility of the oxide semiconductor layer 103 can be
improved. In addition, this heat treatment enables reduction in the
amount of hydrogen that forms excess carriers in the first oxide
semiconductor film 111. At this time, in the case where the heat
treatment is performed in a nitrogen atmosphere, the conductivity
of the first oxide semiconductor film 111 can be increased. When
the oxide semiconductor layer 103 is used as an active layer of the
thin film transistor, the thin film transistor having large on
current is obtained. Here, an atmosphere including a nitrogen gas
at 80 vol % to 100 vol % and a rare gas such as argon at 0 vol % to
20 vol % is preferably employed as the nitrogen atmosphere.
Alternatively, when the heat treatment is performed in an air
atmosphere, the conductivity of the first oxide semiconductor film
111 can be reduced. When the oxide semiconductor layer 103 is used
as the active layer of the thin film transistor, the thin film
transistor having small off is obtained. As the air atmosphere, an
atmosphere including an oxygen gas at 15 vol % to 25 vol % and a
nitrogen gas at 75 vol % to 85 vol % is preferably employed. The
atmosphere at the heat treatment may be changed in accordance with
usage of the oxide semiconductor layer. Note that a cross-sectional
view at this state is FIG. 2B.
[0112] Next, a second oxide semiconductor film 113 to be the buffer
layers 106a and 106b is formed over the first oxide semiconductor
film 111 using a sputtering method in an atmosphere of a rare gas
such as argon. It is preferable that the second oxide semiconductor
film 113 is formed using a sputtering method in an atmosphere of a
rare gas such as argon and a nitrogen gas. As a result, the
conductivity of the buffer layers 106a and 106b can be increased.
Alternatively, the film formation may be performed in an atmosphere
of a rare gas such as argon and an oxygen gas under the condition
that the flow rate of a rare gas such as argon is higher than that
of an oxygen gas. As the second oxide semiconductor film 113, the
oxide semiconductor to be the buffer layers 106a and 106b, which is
described in Embodiment 1, can be used. Specifically, for example,
the film formation is performed by sputtering with use of an oxide
semiconductor target including In, Ga, and Zn
(In.sub.2O.sub.3:Ga.sub.2O.sub.3:ZnO=1:1:1) of 8 inches in
diameter, under the conditions that the distance between the
substrate and the target is 60 mm, the pressure is 0.4 Pa, the
direct current (DC) power is 0.5 kW, the flow rate ratio of
Ar:N.sub.2 in a deposition gas is 35:5 (sccm), and the deposition
temperature is room temperature. As the target, Ga.sub.2O.sub.3 and
ZnO in a pellet state may be disposed on a disk of 8 inches in
diameter which includes In.sub.2O.sub.3. Note that a pulse direct
current (DC) power source is preferable because powder substances
(also referred to as particles or dust) generated in film formation
can be reduced and the film thickness can be uniform. The thickness
of the second oxide semiconductor film 113 is set to 5 nm to 20
nm
[0113] In a manner similar to the case of the first oxide
semiconductor film 111, the target may include insulating oxide so
that the second oxide semiconductor film 113 includes insulating
oxide. Here, as the insulating oxide, silicon oxide is preferable.
Further, nitrogen may be added to the insulating oxide.
[0114] A chamber used for forming the second oxide semiconductor
film 113 may be the same or different from the chamber in which the
first oxide semiconductor film 111 has been formed. In addition, in
formation of the second oxide semiconductor film 113, the same
sputtering apparatus as that for forming the first oxide
semiconductor film 111 can be used.
[0115] Next, the second oxide semiconductor film 113 is subjected
to reverse sputtering treatment. The reverse sputtering refers to a
method in which an RF power source is used for application of
voltage to a substrate side in an argon atmosphere and plasma is
generated in the vicinity of the substrate to modify a surface.
Note that instead of an argon atmosphere, a nitrogen atmosphere, a
helium atmosphere, or the like may be used. Alternatively, an argon
atmosphere to which oxygen, N.sub.2O, or the like is added may be
used. Further alternatively, an argon atmosphere to which Cl.sub.2,
CF.sub.4, or the like is added may be used. In addition, it is
preferable that pressure inside the chamber is set to 10.sup.-5 Pa
or less and impurities inside the chamber are removed in advance.
By the reverse sputtering of the second oxide semiconductor film
113, the conductivity of the second oxide semiconductor film 113
(the buffer layers 106a and 106b) can be increased. For example, an
argon gas is introduced at a pressure of 0.6 Pa and a gas flow rate
of approximately 50 sccm into the chamber where the substrate 100
is set and reverse sputtering treatment is performed for
approximately 3 minutes. Here, since the reverse sputtering
treatment greatly affects a surface of the second oxide
semiconductor film 113, the second oxide semiconductor film 113 has
a structure in which the conductivity is changed in stages or
successively from the surface toward the substrate side in some
cases.
[0116] Further, by the reverse sputtering treatment, dust attached
to the surface of the second oxide semiconductor film 113 can be
removed. Furthermore, by the reverse sputtering treatment, the
flatness of the surface of the second oxide semiconductor film 113
can be improved.
[0117] The substrate 100 is preferably processed without being
exposed to the air during the period from the formation of the
second oxide semiconductor film 113 up to the reverse sputtering
treatment. Note that a chamber used for the reverse sputtering
treatment may be the same or different from the chamber in which
the second oxide semiconductor film 113 has been formed. The
reverse sputtering treatment may be performed after heat treatment
in a nitrogen atmosphere performed next. A cross-sectional view at
this stage is FIG. 2C. A portion above a dashed line in the second
oxide semiconductor film 113 is a mark of the reverse sputtering
treatment.
[0118] Next, the second oxide semiconductor film 113 is subjected
to heat treatment in a nitrogen atmosphere. The heat treatment is
performed at 200.degree. C. to 600.degree. C. inclusive, preferably
250.degree. C. to 500.degree. C. inclusive. For example, the heat
treatment is performed on the substrate 100 set in a furnace in a
nitrogen atmosphere at 350.degree. C. for about one hour. By the
heat treatment on the oxide semiconductor in a nitrogen atmosphere,
the conductivity of the oxide semiconductor can be increased.
Accordingly, the conductivity of the second oxide semiconductor
film 113 can be increased. Therefore, the conductivity of the
buffer layers 106a and 106b can be improved. At this time, by
subjecting the second oxide semiconductor film 113 to the heat
treatment in a nitrogen atmosphere as described above, the
conductivity of the second oxide semiconductor film 113 can be
increased. Here, an atmosphere including a nitrogen gas at 80 vol %
to 100 vol % and a rare gas such as argon at 0 vol % to 20 vol % is
preferably employed as the nitrogen atmosphere. A cross-sectional
view at this stage is FIG. 3A. The heat treatment in a nitrogen
atmosphere progresses from the surface toward the substrate side of
the second oxide semiconductor film 113. Therefore, the second
oxide semiconductor film 113 (the buffer layers 106a and 106b) may
have a structure in which the conductivity is changed in stages or
successively from the surface toward the substrate side of the
second oxide semiconductor film 113 in some cases. In particular,
when time for the heat treatment in a nitrogen atmosphere is not
enough, difference in the conductivity between the surface and the
inside of the second oxide semiconductor film 113 becomes large in
some cases.
[0119] Next, a photolithography process is performed and a resist
mask is formed over the second oxide semiconductor film 113. Then,
the first oxide semiconductor film 111 and the second oxide
semiconductor film 113 are etched. An acid-based etchant can be
used for an etchant for the etching. Here, unnecessary portions are
removed by wet etching using a mixed solution of phosphoric acid,
acetic acid, nitric acid, and pure water (referred to as an
aluminum mixed acid) so that the first oxide semiconductor film 111
and the second oxide semiconductor film 113 have an island shape.
Thus, the oxide semiconductor layer 103 and the buffer layer 106
are formed. The oxide semiconductor layer 103 and the buffer layer
106 are etched to have a tapered edge, whereby disconnection of a
wiring due to a step shape can be prevented. A cross-sectional view
at this stage is FIG. 3B. A plan view at this stage corresponds to
FIG. 8.
[0120] Note that etching here is not limited to wet etching and dry
etching may also be employed. As an etching apparatus used for the
dry etching, an etching apparatus using a reactive ion etching
method (an RIE method), or a dry etching apparatus using a
high-density plasma source such as ECR (electron cyclotron
resonance) or ICP (inductively coupled plasma) can be used. As a
dry etching apparatus by which uniform electric discharge can be
obtained over a wide area as compared to an ICP etching apparatus,
there is an ECCP (enhanced capacitively coupled plasma) mode
etching apparatus in which an upper electrode is grounded, a
high-frequency power source at 13.56 MHz is connected to a lower
electrode, and further a low-frequency power source at 3.2 MHz is
connected to the lower electrode. This ECCP mode etching apparatus
can be applied, for example, even when a substrate of the tenth
generation with a side of longer than 3 m is used.
[0121] Here, the resist mask is formed over the second oxide
semiconductor film 113, whereby the resist mask can be prevented
from being in direct contact with the first oxide semiconductor
film 111, and impurities can be prevented from entering the first
oxide semiconductor film 111 (the oxide semiconductor layer 103)
from the resist mask. In the case of using O.sub.2 ashing or a
resist stripper for removal of the resist mask, the second oxide
semiconductor film 113 is formed over the first oxide semiconductor
film 111; thus, contamination of the first oxide semiconductor film
111 (the oxide semiconductor layer 103) can be prevented.
[0122] Next, a photolithography process is performed and a resist
mask is formed. Then, unnecessary portions of the gate insulating
layer 102 are removed by etching, whereby a contact hole reaching
the wiring or the electrode layer which is formed from the same
material as the gate electrode layer 101 is formed. The contact
hole is provided for direct connection with a conductive film to be
formed later. For example, a contact hole is formed when a thin
film transistor whose gate electrode layer is in direct contact
with the source or drain electrode layer in the driver circuit
portion is formed, or when a terminal that is electrically
connected to a gate wiring of a terminal portion is formed.
[0123] Next, a conductive film 112 formed from a metal material is
formed using a sputtering method or a vacuum evaporation method
over the oxide semiconductor layer 103, the buffer layer 106, and
the gate insulating layer 102. A cross-sectional view at this stage
is FIG. 3C.
[0124] The conductive film 112 can be formed with a single layer or
a stacked layer using the conductive material described in
Embodiment 1. For example, in the conductive film 112, a first
conductive layer and a third conductive layer may be formed using
titanium that is a heat-resistant conductive material, and a second
conductive layer may be formed using an aluminum alloy including
neodymium. The conductive film 112 has such a structure, whereby
low resistance of aluminum is utilized and generation of hillocks
can be reduced.
[0125] Next, a photolithography process is performed and a resist
mask 131 is formed over the conductive film 112. Then, unnecessary
portions are removed by etching, whereby the buffer layers 106a and
106b, source and drain electrode layers 105a and 105b, and a
connection electrode 120 are formed. Wet etching or dry etching is
employed as an etching method at this time. For example, when in
the conductive film 112, the first and third conductive layers are
formed using titanium and the second conductive layer is formed
using an aluminum alloy including neodymium, wet etching can be
performed using a hydrogen peroxide solution, heated hydrochloric
acid, or a nitric acid solution including ammonium fluoride as an
etchant. For example, the conductive film 112 including the first
conductive layer, the second conductive layer, and the third
conductive layer can be etched collectively with use of KSMF-240
(manufactured by Kanto Chemical Co., Inc.). A cross-sectional view
at this stage is FIG. 4A. Note that, in FIG. 4A, since wet etching
allows the layers to be etched isotropically, the edge portions of
the source and drain electrode layers 105a and 105b are recessed
from the resist mask 131.
[0126] Through this etching step, an exposed region of the oxide
semiconductor layer 103 is partly etched, so that the oxide
semiconductor layer 103 includes a region which is between the
buffer layers 106a and 106 and whose thickness is smaller than that
of a region overlapping with the buffer layers 106a and 106b.
[0127] Further, in this photolithography process, a second terminal
122 formed from the same material as that of the source and drain
electrode layers 105a and 105b is left in the terminal portion.
Note that the second terminal 122 is electrically connected to a
source wiring (a source wiring including the source and drain
electrode layers 105a and 105b).
[0128] In the terminal portion, the connection electrode 120 is
directly connected to the first terminal 121 in the terminal
portion through the contact hole formed in the gate insulating
film. Note that although not illustrated here, a source wiring or a
drain wiring, and a gate electrode of the thin film transistor in
the driver circuit are directly connected through the same steps as
the above-described steps.
[0129] In the above photolithography process, two masks are
necessary in a step where the oxide semiconductor layer 103 and the
buffer layer 106 is etched to have an island shape and a step where
the source and drain electrode layers 105a and 105b are formed.
However, with use of a resist mask having regions with plural
thicknesses (typically, two different thicknesses) which is formed
using a multi-tone (high-tone) mask, the number of resist masks can
be reduced, resulting in a simplified process and lower costs. A
photolithography process using a multi-tone mask is described with
reference to FIGS. 6A to 6C.
[0130] First, starting from the state illustrated in FIG. 3A, a
conductive film 112 is formed over the second oxide semiconductor
film 113. Then, a resist mask 132 having regions with a plurality
of different thicknesses is formed over the conductive film 112 as
illustrated in FIG. 6A by light exposure using a multi-tone
(high-tone) mask with which transmitted light has a plurality of
intensity. The resist mask 132 has a small thickness in a region
that overlaps with part of the gate electrode layer 101. Next, the
first oxide semiconductor film 111, the second oxide semiconductor
film 113, and the conductive film 112 are etched and processed into
an island shape using the resist mask 132, whereby the oxide
semiconductor layer 103, the buffer layer 106, a conductive layer
115, and a second terminal 124 are formed. A cross-sectional view
at this stage corresponds to FIG. 6A.
[0131] Next, the resist mask 132 is subjected to ashing to form the
resist mask 131. As illustrated in FIG. 6B, the resist mask 131 is
reduced in area and thickness by ashing, and the region thereof
having a thin thickness is removed.
[0132] Lastly, the buffer layer 106, the conductive layer 115, and
the second terminal 124 are etched using the resist mask 131 to
form the buffer layers 106a and 106b, the source and drain
electrode layers 105a and 105b, and the second terminal 122. The
resist mask 131 is reduced in area and thickness, whereby end
portions of the oxide semiconductor layer 103, the buffer layers
106a and 106b, the source and drain electrode layers 105a and 105b,
and the second terminal 122 are also etched. Therefore, the width
in a channel direction of each of the oxide semiconductor layer 103
and the buffer layers 106a and 106b is the approximately the same
as that of the source and drain electrode layers. In addition, a
layer formed of the first oxide semiconductor film and the second
oxide semiconductor film is formed below the second terminal 122. A
cross-sectional view at this stage corresponds to FIG. 6C. Note
that after a protective insulating layer 107 is formed in a later
step, the gate insulating layer 102 and the protective insulating
layer 107 are etched to form a contact hole, whereby a transparent
conductive film is formed to connect the first terminal 121 and an
FPC to each other.
[0133] Next, the resist mask 131 is removed and then heat treatment
is performed. The heat treatment is performed at 200.degree. C. to
600.degree. C. inclusive, preferably 250.degree. C. to 500.degree.
C. inclusive. For example, the heat treatment is performed on the
substrate 100 set in a furnace in a nitrogen atmosphere at
350.degree. C. for approximately one hour. By this heat treatment,
rearrangement at an atomic level of the oxide semiconductor layer
103 which is exposed and located between the buffer layers 106a and
106b is performed and distortion in a crystal structure, which
interrupts carrier movement, is released. Accordingly, mobility of
the oxide semiconductor layer 103 can be improved. In addition,
this heat treatment enables reduction in the amount of hydrogen
that forms excess carriers in the oxide semiconductor layer 103. At
this time, in the case where the heat treatment is performed in a
nitrogen atmosphere, the conductivity of the oxide semiconductor
layer 103 can be increased. When the oxide semiconductor layer 103
is used as the active layer of the thin film transistor, the thin
film transistor having large on current is obtained. Here, an
atmosphere including a nitrogen gas at 80 vol % to 100 vol % and a
rare gas such as argon at 0 vol % to 20 vol % is preferably
employed for the nitrogen atmosphere. Alternatively, heat treatment
is performed in an air atmosphere, the conductivity of the oxide
semiconductor layer 103 can be reduced. When the oxide
semiconductor layer 103 is used as the active layer of the thin
film transistor, the thin film transistor having small off current
is obtained. As the air atmosphere, an atmosphere including an
oxygen gas at 15 vol % to 25 vol % and a nitrogen gas at 75 vol %
to 85 vol % is preferably employed. The atmosphere at the heat
treatment may be changed in accordance with usage of the oxide
semiconductor layer. A cross-sectional view at this stage is FIG.
4B. A plan view at this stage corresponds to FIG. 9.
[0134] Alternatively, at this time, the heat treatment is performed
in an oxygen atmosphere, high-resistance regions are formed in
exposed parts of the buffer layers 106a and 106b.
[0135] In this manner, the buffer layers 106a and 106b having
higher conductivity than the oxide semiconductor layer 103 are
formed over the oxide semiconductor layer 103 and the source and
drain electrode layers 105a and 105b are formed over the buffer
layer 106a and 106b, which results in that the oxide semiconductor
layer 103 and the source and drain electrode layers 105a and 105b
are electrically connected to each other with the buffer layers
106a and 106b interposed therebetween. Thus, an ohmic contact is
formed between the oxide semiconductor layer 103 and the source and
drain electrode layers 105a and 105b and the contact resistance is
reduced; accordingly electric characteristics of the thin film
transistor can be stabilized. In addition, by subjecting the buffer
layers 106a and 106b to reverse sputtering treatment and heat
treatment in a nitrogen atmosphere, the buffer layers 106a and 106b
can have higher conductivity than the oxide semiconductor layer
103.
[0136] Alternatively, the first oxide semiconductor film 111 is
subjected to heat treatment, and after formation of the buffer
layers 106a and 106b and the source and drain layers 105a and 105b,
the oxide semiconductor layer 103 is subjected to heat treatment,
whereby rearrangement at an atomic level of the oxide semiconductor
layer 103 is performed and electric characteristics of the thin
film transistor whose active layer is the oxide semiconductor layer
103 can be improved.
[0137] Through the above process, a thin film transistor 170 can be
manufactured in which the oxide semiconductor layer 103 serves as a
channel formation region and the buffer layers 106a and 106b having
higher conductivity than the oxide semiconductor layer 103 are
formed over the oxide semiconductor layer 103.
[0138] Next, the protective insulating layer 107 and a resin layer
133 are formed to cover the thin film transistor 170. First, the
protective insulating layer 107 is formed. A silicon nitride film,
a silicon oxide film, a silicon oxynitride film, an aluminum oxide
film, a tantalum oxide film, or the like obtained using a PCVD
method, a sputtering method, or the like can be used for the
protective insulating layer 107. In particular, it is preferable to
form a silicon nitride film with a high-density plasma apparatus.
In the case of using a high-density plasma apparatus, the
protective insulating layer 107 can be formed dense as compared to
the case of using a PCVD method. Such a protective insulating layer
107 can prevent moisture, hydrogen ions, OH.sup.-, and the like
from entering the oxide semiconductor layer 103 and the buffer
layers 106a and 106b.
[0139] Next, a photolithography process is performed and a resist
mask is formed. Then, the protective insulating layer 107 is etched
to form a contact hole 125 reaching the source or drain electrode
layer 105b. In addition, a contact hole 126 reaching the connection
electrode 120 and a contact hole 127 reaching the second terminal
122 are also formed by this etching.
[0140] Next, the resin layer 133 is formed over the protective
insulating layer 107 in a pixel portion of the display device. The
resin layer 133 is formed with a thickness ranging from 0.5 .mu.m
to 3 .mu.m using polyimide, acrylic, polyamide, polyimideamide,
resist, or benzocyclobutene, which is a photosensitive or non
photosensitive organic material; or a stack of any of these
materials. When photosensitive polyimide is deposited using a
coating method, the number of steps can be reduced. The resin layer
133 is formed in the pixel portion of the display device through
exposure to light, development, and baking; at this time, the resin
layer 133 is not formed in a portion overlapping with the contact
hole 125 and a portion overlapping with the capacitor wiring 108.
The resin layer 133 can prevent moisture, hydrogen, and the like
from entering the oxide semiconductor layer 103 and the buffer
layers 106a and 106b. In addition, the resin layer 133 enables
formation of a planar pixel electrode which is provided over the
resin layer 133.
[0141] Next, a transparent conductive film is formed. The
transparent conductive film is formed from indium oxide
(In.sub.2O.sub.3), indium oxide-tin oxide alloy
(In.sub.2O.sub.3--SnO.sub.2, abbreviated to ITO), or the like using
a sputtering method, a vacuum evaporation method, or the like. Such
a material is etched with a hydrochloric acid-based solution.
However, since a residue is easily generated particularly in
etching ITO, indium oxide-zinc oxide alloy (In.sub.2O.sub.3--ZnO)
may be used to improve etching processability.
[0142] Next, a photolithography process is performed and a resist
mask is formed. Then, unnecessary portions are removed by etching
to form a pixel electrode layer 110.
[0143] In this photolithography process, a storage capacitor is
formed with the capacitor wiring 108 and the pixel electrode layer
110, in which the gate insulating layer 102 and the protective
insulating layer 107 in the capacitor portion are used as
dielectrics.
[0144] In addition, in this photolithography process, the first
terminal 121 and the second terminal 122 are covered with the
resist mask, and transparent conductive films 128 and 129 formed in
the terminal portion are left. The transparent conductive films 128
and 129 function as electrodes or wirings connected to an FPC. The
transparent conductive film 128 formed over the connection
electrode 120 which is directly connected to the first terminal 121
is a connection terminal electrode which functions as an input
terminal of the gate wiring. The transparent conductive film 129
formed over the second terminal 122 is a connection terminal
electrode which functions as an input terminal of the source
wiring.
[0145] Subsequently, the resist mask is removed. A cross-sectional
view at this stage is FIG. 5A. Note that a plan view at this stage
corresponds to FIG. 10.
[0146] Although the protective insulating layer 107 is formed and
the resin layer 133 is formed thereover in this embodiment, this
embodiment is not limited thereto. As illustrated in FIG. 5B, after
the resin layer 133 is formed so as to cover the transistor 170,
the protective insulating layer 107 may be formed over the resin
layer 133. When the protective insulating layer 107 and the resin
layer 133 are formed in this order, the resin layer 133 can protect
the oxide semiconductor layer 103 and the buffer layers 106a and
106b from plasma damage which is caused in formation of the
protective insulating layer 107.
[0147] FIGS. 12A1 and 12A2 are respectively a cross-sectional view
and a plan view of a gate wiring terminal portion at this stage.
FIG. 12A1 is a cross-sectional view taken along line C1-C2 of FIG.
12A2. In FIG. 12A1, a transparent conductive film 155 formed over a
protective insulating layer 154 is a connection terminal electrode
which functions as an input terminal Furthermore, in FIG. 12A1, in
the terminal portion, the first terminal 151 formed from the same
material as the gate wiring and a connection electrode 153 formed
from the same material as the source wiring are overlapped with
each other with a gate insulating layer 152 interposed therebetween
and are electrically connected. Further, the connection electrode
153 and the transparent conductive film 155 are in direct contact
with each other and are electrically connected through a contact
hole formed in the protective insulating layer 154.
[0148] Further, FIGS. 12B1 and 12B2 are respectively a
cross-sectional view and a plan view of a source wiring terminal
portion. FIG. 12B1 is a cross-sectional view taken along line D1-D2
of FIG. 12B2. In FIG. 12B1, the transparent conductive film 155
formed over the protective insulating layer 154 is a connection
terminal electrode which functions as an input terminal.
Furthermore, in FIG. 12B1, in the terminal portion, an electrode
156 formed from the same material as the gate wiring is located
below and overlapped with a second terminal 150, which is
electrically connected to the source wiring, with the gate
insulating layer 152 interposed therebetween. The electrode 156 is
not electrically connected to the second terminal 150, and a
capacitor to prevent noise or static electricity can be formed when
the potential of the electrode 156 is set to a potential different
from that of the second terminal 150, such as floating, GND, or 0
V. The second terminal 150 is electrically connected to the
transparent conductive film 155 through the protective insulating
layer 154.
[0149] A plurality of gate wirings, source wirings, and capacitor
wirings are provided depending on the pixel density. Also in the
terminal portion, the first terminal at the same potential as the
gate wiring, the second terminal at the same potential as the
source wiring, the third terminal at the same potential as the
capacitor wiring, and the like are each arranged in plurality. The
number of each of the terminals may be any number, and the number
of the terminals may be determined by a practitioner as
appropriate.
[0150] Thus, a pixel thin film transistor portion including the
thin film transistor 170 that is a bottom-gate n-channel thin film
transistor, and a storage capacitor can be completed. By arranging
the thin film transistor and the storage capacitor in each pixel of
a pixel portion in which pixels are arranged in a matrix form, one
of substrates for manufacturing an active matrix display device can
be obtained. In this specification, such a substrate is referred to
as an active matrix substrate for convenience.
[0151] In the case of manufacturing an active matrix liquid crystal
display device, an active matrix substrate and a counter substrate
provided with a counter electrode are bonded to each other with a
liquid crystal layer interposed therebetween. Note that a common
electrode electrically connected to the counter electrode on the
counter substrate is provided over the active matrix substrate, and
a fourth terminal electrically connected to the common electrode is
provided in the terminal portion. The fourth terminal is provided
so that the common electrode is set to a fixed potential such as
GND or 0 V.
[0152] Further, this embodiment is not limited to a pixel structure
of FIG. 10, and an example of a plan view different from FIG. 10 is
illustrated in FIG. 11. FIG. 11 illustrates an example in which a
capacitor wiring is not provided and a storage capacitor is formed
with a pixel electrode layer and a gate wiring of an adjacent pixel
which overlap with each other with a protective insulating layer
and a gate insulating layer interposed therebetween. In this case,
the capacitor wiring and the third terminal connected to the
capacitor wiring can be omitted. Note that in FIG. 11, portions
similar to those in FIG. 10 are denoted by the same reference
numerals.
[0153] In an active matrix liquid crystal display device, pixel
electrodes arranged in a matrix form are driven to form a display
pattern on a screen. Specifically, voltage is applied between a
selected pixel electrode and a counter electrode corresponding to
the pixel electrode, so that a liquid crystal layer provided
between the pixel electrode and the counter electrode is optically
modulated and this optical modulation is recognized as a display
pattern by an observer.
[0154] In displaying moving images, a liquid crystal display device
has a problem that a long response time of liquid crystal molecules
themselves causes afterimages or blurring of moving images. In
order to improve the moving-image characteristics of a liquid
crystal display device, a driving method called black insertion is
employed in which black is displayed on the whole screen every
other frame period.
[0155] Further, there is another driving method which is so-called
double-frame rate driving. In the double-frame rate driving, a
vertical synchronizing frequency is set 1.5 times or more,
preferably 2 times or more as high as a usual vertical
synchronizing frequency, whereby moving image characteristics are
improved.
[0156] Further alternatively, in order to improve the moving-image
characteristics of a liquid crystal display device, a driving
method may be employed, in which a plurality of LEDs
(light-emitting diodes) or a plurality of EL light sources are used
to form a surface light source as a backlight, and each light
source of the surface light source is independently driven in a
pulsed manner in one frame period. As the surface light source,
three or more kinds of LEDs may be used and an LED emitting white
light may be used. Since a plurality of LEDs can be controlled
independently, the light emission timing of LEDs can be
synchronized with the timing at which a liquid crystal layer is
optically modulated. According to this driving method, LEDs can be
partly turned off; therefore, an effect of reducing power
consumption can be obtained particularly in the case of displaying
an image having a large part on which black is displayed.
[0157] By combining these driving methods, the display
characteristics of a liquid crystal display device, such as
moving-image characteristics, can be improved as compared to those
of conventional liquid crystal display devices.
[0158] The n-channel transistor obtained in this embodiment
includes an oxide semiconductor layer for a channel formation
region and has excellent dynamic characteristics; thus, any of
these driving methods can be combined with each other.
[0159] In manufacturing a light-emitting display device, one
electrode (also referred to as a cathode) of an organic
light-emitting element is set to a low power supply potential such
as GND or 0 V; thus, a terminal portion is provided with a fourth
terminal for setting the cathode to a low power supply potential
such as GND or 0 V. Also in manufacturing a light-emitting display
device, a power supply line is provided in addition to a source
wiring and a gate wiring. Accordingly, the terminal portion is
provided with a fifth terminal electrically connected to the power
supply line.
[0160] As described above, in the thin film transistor using the
oxide semiconductor layer, the buffer layers having higher
conductivity than the oxide semiconductor layer are formed over the
oxide semiconductor layer, and the source and drain electrode
layers are formed over the buffer layers. Accordingly, the oxide
semiconductor layer and the source and drain electrode layers can
be electrically connected to each other with the buffer layers
interposed therebetween, contact resistance between the oxide
semiconductor layer and the source and drain electrode layers can
be reduced, and electric characteristics can be stabilized. In
addition, by subjecting the buffer layers to reverse sputtering
treatment and heat treatment in a nitrogen atmosphere, the buffer
layers having higher conductivity than the oxide semiconductor
layer can be obtained.
[0161] By using the thin film transistor for a pixel portion and a
driver circuit portion of a display device, the display device can
have stable electric characteristics and high reliability.
[0162] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 3
[0163] In this embodiment, an inverter circuit using two
bottom-gate thin film transistors described in Embodiment 1 will be
described with reference to FIGS. 14A to 14C.
[0164] A driver circuit for driving a pixel portion is formed using
an inverter circuit, a capacitor, a resistor, and the like. When
the inverter circuit is formed using two n-channel TFTs in
combination, there are an inverter circuit having a combination of
an enhancement type transistor and a depletion type transistor
(hereinafter, referred to as an EDMOS circuit) and an inverter
circuit having a combination of two enhancement type TFTs
(hereinafter, referred to as an EEMOS circuit). Note that an
n-channel TFT whose threshold voltage is positive is referred to as
an enhancement type transistor, and an n-channel TFT whose
threshold voltage is negative is referred to as a depletion type
transistor, throughout this specification.
[0165] The pixel portion and the driver circuit are formed over one
substrate. In the pixel portion, on and off of voltage application
to a pixel electrode are switched by enhancement type transistors
arranged in matrix. The enhancement type transistors arranged in
the pixel portion include an oxide semiconductor.
[0166] A cross-sectional structure of the inverter circuit of the
driver circuit (EDMOS circuit) is illustrated in FIG. 14A. Note
that in FIG. 14A, the inverted staggered thin film transistor
illustrated in FIGS. 1A and 1B is used as a first thin film
transistor 430a and a second thin film transistor 430b. However, a
thin film transistor that can be used for the inverter circuit
described in this embodiment is not limited to this structure.
[0167] In the first thin film transistor 430a illustrated in FIG.
14A, a first gate electrode layer 401a is provided over a substrate
400, a gate insulating layer 402 is provided over the first gate
electrode layer 401a, a first oxide semiconductor layer 403a is
provided over the gate insulating layer 402, first buffer layers
404a and 404b are provided over the first oxide semiconductor layer
403a, and a first wiring 405a and a second wiring 405b are provided
over the first buffer layers 404a and 404b. The first oxide
semiconductor layer 403a is electrically connected to the first
wiring 405a and the second wiring 405b with the first buffer layers
404a and 404b interposed therebetween. Similarly, in the second
thin film transistor 430b, a second gate electrode layer 401b is
provided over the substrate 400, the gate insulating layer 402 is
provided over the second gate electrode layer 401b, a second oxide
semiconductor layer 403b is provided over the gate insulating layer
402, second buffer layers 406a and 406b are provided over the
second oxide semiconductor layer 403b, and the second wiring 405b
and a third wiring 405c are provided over the second buffer layers
406a and 406b. The second oxide semiconductor layer 403b is
electrically connected to the second wiring 405b and the third
wiring 405c with the second buffer layers 406a and 406b interposed
therebetween. Here, the second wiring 405b is directly connected to
the second gate electrode layer 401b through a contact hole 414
formed in the gate insulating layer 402. Note that as for the
structures and materials of the respective portions, the thin film
transistor described in Embodiment 1 is to be referred to.
[0168] The first wiring 405a is a power supply line at a ground
potential (a ground power supply line). This power supply line at a
ground potential may be a power supply line to which a negative
voltage VDL is applied (a negative power supply line). The third
wiring 405c is a power supply line to which a positive voltage
V.sub.DD is applied (a positive power supply line).
[0169] As illustrated in FIG. 14A, the second wiring 405b which is
electrically connected to both the first buffer layer 404b and the
second buffer layer 406a is directly connected to the second gate
electrode layer 401b of the second thin film transistor 430b
through the contact hole 414 formed in the gate insulating layer
402. By the direct connection, favorable contact can be obtained,
which leads to a reduction in contact resistance. Since the second
wiring 405b can be directly connected to the second gate electrode
layer 401b at the same time as formation of the second wiring 405b,
favorable contact can be obtained without influence of heat
treatment after formation of the second wiring 405b. Further, in
comparison with the case where the second gate electrode layer 401b
and the second wiring 405b are connected to each other through
another conductive film, for example, a transparent conductive
film, reduction in the number of contact holes and reduction in an
area occupied by the driver circuit due to the reduction in the
number of contact holes can be achieved.
[0170] Further, FIG. 14C is a plan view of the inverter circuit
(EDMOS circuit) of the driver circuit. In FIG. 14C, a cross section
taken along the chain line Z1-Z2 corresponds to FIG. 14A.
[0171] Further, an equivalent circuit of the EDMOS circuit is
illustrated in FIG. 14B. The circuit connection of FIGS. 14A and
14C corresponds to that illustrated in FIG. 14B. An example in
which the first thin film transistor 430a is an enhancement type
n-channel transistor and the second thin film transistor 430b is a
depletion type n-channel transistor is illustrated.
[0172] In order to manufacture an enhancement type n-channel
transistor and a depletion type n-channel transistor over one
substrate, for example, the first buffer layers 404a and 404b and
the first oxide semiconductor layer 403a are formed using materials
or conditions which are different from those for the second buffer
layers 406a and 406b and the second oxide semiconductor layer 403b.
Alternatively, an EDMOS circuit may be formed in such a manner that
gate electrodes are provided over and under the oxide semiconductor
layer to control the threshold value and a voltage is applied to
the gate electrodes so that one of the TFTs is normally on while
the other TFT is normally off.
[0173] Alternatively, without being limited to the EDMOS circuit,
an EEMOS circuit can be manufactured in such a manner that the
first thin film transistor 430a and the second thin film transistor
430b are enhancement type n-channel transistors. In that case, the
third wiring 405c and the second gate electrode layer 401b are
connected to each other instead of the connection between the
second wiring 405b and the second gate electrode layer 401b.
[0174] In the thin film transistor used in this embodiment, the
buffer layers having higher conductivity than the oxide
semiconductor layer are formed over the oxide semiconductor layer,
and the source and drain electrode layers are formed over the
buffer layers. Accordingly, the oxide semiconductor layer can be
electrically connected to the source and drain electrode layers
with the buffer layers interposed therebetween, contact resistance
between the oxide semiconductor layer and the source and drain
electrode layers can be reduced, and electric characteristics can
be stabilized. Accordingly, circuit characteristics of the inverter
circuit described in this embodiment can be improved.
[0175] With use of the inverter circuit described in this
embodiment for a driver circuit portion, a display device having
stable electric characteristics and high reliability can be
provided.
[0176] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 4
[0177] In this embodiment, a thin film transistor having a
structure different from the thin film transistors described in
Embodiment 1 will be described with reference to FIGS. 32A and
32B.
[0178] A thin film transistor having a bottom gate structure of
this embodiment is illustrated in FIGS. 32A and 32B. FIG. 32A is a
cross-sectional view, and FIG. 32B is a plan view. FIG. 32A is a
cross-sectional view taken along line A1-A2 of FIG. 32B.
[0179] In the thin film transistor illustrated in FIGS. 32A and
32B, a gate electrode layer 101 is provided over a substrate 100, a
gate insulating layer 102 is provided over the gate electrode layer
101, a high-conductive oxide semiconductor layer 300 is provided
over the gate insulating layer 102, an oxide semiconductor layer
103 is provided over the high-conductive oxide semiconductor layer
300, buffer layers 106a and 106b are provided over the oxide
semiconductor layer 103, and source and drain electrode layers 105a
and 105b are provided over the buffer layers 106a and 106b. In
other words, the oxide semiconductor layer 103 and the source and
drain electrode layers 105a and 105b are electrically connected to
each other with the buffer layers 106a and 106b interposed
therebetween. Here, the buffer layers 106a and 106b have higher
conductivity than the oxide semiconductor layer 103. In addition,
the high-conductive oxide semiconductor layer 300 has higher
conductivity than the oxide semiconductor layer 103. In addition,
the oxide semiconductor layer 103 includes a region between the
buffer layers 106a and 106b. The region has a thickness smaller
than a region overlapping with the buffer layers 106a and 106b.
That is, the thin film transistor illustrated in FIGS. 32A and 32B
has a structure in which the high-conductive oxide semiconductor
layer 300 is provided below the oxide semiconductor layer 103 in
the structure of the thin film transistor illustrated in FIGS. 1A
and 1B in Embodiment 1.
[0180] The high-conductive oxide semiconductor layer 300 is formed
using the same material as that for the buffer layers 106a and
106b. In a manner similar to the case of the buffer layers 106a and
106b, the high-conductive oxide semiconductor layer 300 can be
formed using a non-single-crystal film formed from an
In--Ga--Zn--O-based, In--Sn--Zn--O-based, Ga--Sn--Zn--O-based,
In--Zn--O-based, Sn--Zn--O-based, In--Sn--O-based, Ga--Zn--O-based,
In--O-based, Sn--O-based, or Zn--O-based oxide semiconductor. In
addition, the high-conductive oxide semiconductor layer 300 is
preferably formed using a non-single-crystal film formed from an
In--Ga--Zn--O--N-based, Ga--Zn--O--N-based, Zn--O--N-based, or
Sn--Zn--O--N-based oxide semiconductor, which includes nitrogen. In
addition, the non-single-crystal film may include insulating oxide
such as silicon oxide.
[0181] It is preferable that the high-conductive oxide
semiconductor layer 300 is formed using a sputtering method in an
atmosphere of a nitrogen gas and a rare gas such as argon in a
manner similar to the case of the buffer layers 106a and 106b. When
the conductive oxide semiconductor layer 300 is formed in such a
manner, conductivity of the high-conductive oxide semiconductor
layer 300 can be increased. In addition, when reverse sputtering
treatment and heat treatment in a nitrogen atmosphere are performed
on the formed oxide semiconductor film, the conductivity of the
high-conductive oxide semiconductor layer 300 can be further
increased. Here, an atmosphere including a nitrogen gas at 80 vol %
to 100 vol % and a rare gas such as argon at 0 vol % to 20 vol % is
preferably employed as the nitrogen atmosphere.
[0182] Further, the high-conductive oxide semiconductor layer 300
may have a structure in which the conductivity is changed in stages
or successively from the surface toward the substrate side of the
high-conductive oxide semiconductor layer 300 in some cases.
[0183] The high-conductive oxide semiconductor layer 300 includes
at least an amorphous component. A crystal grain (a nanocrystal) is
included in an amorphous structure in some cases. The crystal
grains (nanocrystals) each have a diameter of approximately 1 nm to
10 nm, typically, approximately 2 nm to 4 nm Note that the crystal
state is evaluated by X-ray diffraction (XRD) analysis.
[0184] It is preferable that the thickness of an oxides
semiconductor film for the high-conductive oxide semiconductor
layer 300 is 5 nm to 20 nm Needless to say, when the film includes
a crystal grain, the diameter of the crystal grain does not exceed
the thickness of the film.
[0185] By employing a stacked-layer structure of the
high-conductive oxide semiconductor layer 300 and the oxide
semiconductor layer 103 for an active layer of the thin film
transistor, drain current flows mainly through the high-conductive
oxide semiconductor layer 300, which has higher conductivity, when
the thin film transistor is turned on, and the field effect
mobility can be increased. Further, drain current flows mainly
through the region having a smaller thickness of the oxide
semiconductor layer 103 between the buffer layers 106a and 106b
when the thin film transistor is turned off; thus, off current can
be prevented from flowing through the high-conductive oxide
semiconductor layer 300, which has high conductivity, whereby
increase in off current can be suppressed.
[0186] Note that, as for a structure and materials of parts other
than the high-conductive oxide semiconductor layer 300 of the thin
film transistor of this embodiment, Embodiment 1 is to be referred
to.
[0187] A manufacturing process of the thin film transistor
described this embodiment is substantially similar to the
manufacturing process of the thin film transistor described in
Embodiment 2. First, steps up to formation of the gate insulating
layer 102 are performed in the method described in Embodiment
2.
[0188] Next, a high-conductive oxide semiconductor film for forming
the high-conductive oxide semiconductor layer 300 is formed over
the gate insulating layer 102. The high-conductive oxide
semiconductor film is formed in a manner similar to that of the
second oxide semiconductor film 113 for forming the buffer layers
106a and 106b in an atmosphere of a rare gas such as argon with use
of a sputtering method. It is preferable that the high-conductive
oxide semiconductor film is formed using a sputtering method in an
atmosphere of a rare gas such as argon and a nitrogen gas.
Accordingly, the conductivity of the high-conductive oxide
semiconductor layer 300 can be increased. Alternatively, the film
formation may be performed in an atmosphere of a rare gas such as
an argon gas and an oxygen gas under the condition that the flow
rate of a rare gas such as an argon gas is higher than that of an
oxygen gas. As the high-conductive oxide semiconductor film, the
oxide semiconductor to be the high-conductive oxide semiconductor
layer 300 can be used. The target may include insulating oxide so
that the high-conductive oxide semiconductor film includes the
insulating oxide. Here, as the insulating oxide, silicon oxide is
preferable. Further, nitrogen may be added to the insulating oxide.
As a specific example, the formation method of the second oxide
semiconductor film 113 described in Embodiment 2 is to be referred
to.
[0189] Next, the high-conductive oxide semiconductor film is
subjected to reverse sputtering treatment. Note that the reverse
sputtering is a method in which voltage is applied to a substrate
side in an argon atmosphere with use of an RF power source without
applying voltage to a target side, so that plasma is generated to
modify the surface of the substrate. Note that instead of an argon
atmosphere, a nitrogen atmosphere, a helium atmosphere, or the like
may be used. Alternatively, an argon atmosphere to which oxygen,
N.sub.2O, or the like is added may be used. Further alternatively,
an argon atmosphere to which Cl.sub.2, CF.sub.4, or the like is
added may be used. Further, the pressure in the chamber is
preferably set to 10.sup.-5 Pa or lower in advance so that an
impurity in the chamber is removed. For example, an argon gas is
introduced at a pressure of 0.6 Pa and a gas flow rate of
approximately 50 sccm into the chamber where the substrate 100 is
set and reverse sputtering treatment is performed for approximately
3 minutes.
[0190] Next, the high-conductive oxide semiconductor film is
subjected to heat treatment in a nitrogen atmosphere. The heat
treatment is performed at 200.degree. C. to 600.degree. C.
inclusive, preferably 250.degree. C. to 500.degree. C. inclusive.
For example, the heat treatment is performed on the substrate 100
set in a furnace in a nitrogen atmosphere at 350.degree. C. for
approximately one hour. Here, an atmosphere including a nitrogen
gas at 80 vol % to 100 vol % and a rare gas such as argon at 0 vol
% to 20 vol % is preferably employed as the nitrogen atmosphere.
The heat treatment in a nitrogen atmosphere progresses from the
surface toward the inside of the high-conductive oxide
semiconductor film. Therefore, the high-conductive oxide
semiconductor film (the high-conductive oxide semiconductor layer
300) may have a structure in which the conductivity is changed in
stages or successively from the surface toward the substrate side
of the high-conductive oxide semiconductor film in some cases. In
particular, when time for the heat treatment in a nitrogen
atmosphere is not enough, the conductivity of the high-conductive
oxide semiconductor film is not increased sufficiently in some
cases.
[0191] Next, a first oxide semiconductor film 111 is formed over
the high-conductive oxide semiconductor film. Steps after this step
are performed in accordance with the manufacturing steps of the
thin film transistor described in Embodiment 2 to manufacture a
thin film transistor. Note that the high-conductive oxide
semiconductor layer 300 is formed in such a manner that the
high-conductive oxide semiconductor film is etched at the same time
as etching of the first oxide semiconductor film 111 and the second
oxide semiconductor film 113.
[0192] In the thin film transistor used in this embodiment, the
buffer layers having higher conductivity than the oxide
semiconductor layer are formed over the oxide semiconductor layer,
and the source and drain electrode layers are formed over the
buffer layers. Accordingly, the oxide semiconductor layer and the
source and drain electrode layers can be electrically connected to
each other with the buffer layers interposed therebetween, contact
resistance between the oxide semiconductor layer and the source and
drain electrode layers can be reduced, and electric characteristics
can be stabilized. In addition, the buffer layers are subjected to
reverse sputtering and heat treatment in a nitrogen atmosphere,
whereby the buffer layers having higher conductivity than the oxide
semiconductor layer can be obtained. By employing the stacked-layer
structure of the high-conductive oxide semiconductor layer 300 and
the oxide semiconductor layer 103 for the active layer of the thin
film transistor, the conductivity can be increased when the thin
film transistor is turned on, and increase of off current can be
suppressed when the thin film transistor is turned off.
[0193] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 5
[0194] In this embodiment, an example will be described below, in
which at least part of a driver circuit and a thin film transistor
arranged in a pixel portion are formed over one substrate in a
display device which is one example of a semiconductor device.
[0195] The thin film transistor to be arranged in the pixel portion
is formed in accordance with Embodiment 2. Further, the thin film
transistor described in any of Embodiments 1 to 4 is an n-channel
TFT, and thus part of a driver circuit that can include an
n-channel TFT among driver circuits is formed over the same
substrate as the thin film transistor of the pixel portion.
[0196] FIG. 15A illustrates an example of a block diagram of an
active matrix liquid crystal display device, which is an example of
a semiconductor device. The display device illustrated in FIG. 15A
includes, over a substrate 5300, a pixel portion 5301 having a
plurality of pixels each provided with a display element, a
scan-line driver circuit 5302 that selects each pixel, and a signal
line driver circuit 5303 that controls a video signal input to a
selected pixel.
[0197] The pixel portion 5301 is connected to the signal line
driver circuit 5303 by a plurality of signal lines S1 to Sm (not
shown) which extend in a column direction from the signal line
driver circuit 5303, and to the scan line driver circuit 5302 by a
plurality of scan lines G1 to Gn (not shown) that extend in a row
direction from the scan line driver circuit 5302. The pixel portion
5301 includes a plurality of pixels (not illustrated) arranged in a
matrix form by the signal lines S1 to Sm and the scan lines G1 to
Gn. Then, each pixel is connected to a signal line Sj (any one of
the signal lines S1 to Sm) and a scan line Gi (any one of the scan
lines G1 to Gn).
[0198] In addition, the thin film transistor described in any of
Embodiments 1 to 4 is an n-channel TFT, and a signal line driver
circuit including the n-channel TFT is described with reference to
FIG. 16.
[0199] The signal-line driver circuit illustrated in FIG. 16
includes a driver IC 5601, switch groups 5602_1 to 5602_M, a first
wiring 5611, a second wiring 5612, a third wiring 5613, and wirings
5621_1 to 5621_M. Each of the switch groups 5602_1 to 5602_M is
connected to the first wiring 5611, the second wiring 5612, and the
third wiring 5613, and the wirings 5621_1 to 5621_M are connected
to the switch groups 5602_1 to 5602_M, respectively.
[0200] The driver IC 5601 is connected to the first wiring 5611,
the second wiring 5612, the third wiring 5613, and the wirings
5621_1 to 5621_M. Each of the switch groups 5602_1 to 5602_M is
connected to the first wiring 5611, the second wiring 5612, and the
third wiring 5613, and the wirings 5621_1 to 5621_M are connected
to the switch groups 5602_1 to 5602_M, respectively. Each of the
wirings 5621_1 to 5621_M is connected to three signal lines (a
signal line Sm-2, a signal line Sm-1, and a signal line Sm (m=3M))
via the first thin film transistor 5603a, the second thin film
transistor 5603b, and the third thin film transistor 5603c. For
example, the wiring 5621_J of the J-th column (one of the wirings
5621_1 to 5621_M) is connected to a signal line Sj-2, a signal line
Sj-1, and a signal line Sj (j=3J) via the first thin film
transistor 5603a, the second thin film transistor 5603b, and the
third thin film transistor 5603c which are included in the switch
group 5602_J.
[0201] A signal is input to each of the first wiring 5611, the
second wiring 5612, and the third wiring 5613.
[0202] Note that the driver IC 5601 is preferably formed using a
single crystal semiconductor. Further, the switch groups 5602_1 to
5602_M are preferably formed over the same substrate as the pixel
portion is. Therefore, the driver IC 5601 and the switch groups
5602_1 to 5602_M are preferably connected through an FPC or the
like. Alternatively, the driver IC 5601 may be formed by providing
a single crystal semiconductor layer over the same substrate as the
pixel portion using a method such as bonding.
[0203] Next, operation of the signal-line driver circuit
illustrated in FIG. 16 is described with reference to a timing
chart of FIG. 17. FIG. 17 illustrates the timing chart where the
scan line Gi in the i-th row is selected. A selection period of the
scan line Gi of the i-th row is divided into a first sub-selection
period T1, a second sub-selection period T2, and a third
sub-selection period T3. Furthermore, the signal-line driver
circuit in FIG. 16 operates similarly to that in FIG. 17 even when
a scan line of another row is selected.
[0204] Note that the timing chart of FIG. 17 illustrates the case
where the wiring 5621_J in the J-th column is connected to the
signal line Sj-2, the signal line Sj-1, and the signal line Sj
through the first thin film transistor 5603a, the second thin film
transistor 5603b, and the third thin film transistor 5603c.
[0205] The timing chart of FIG. 17 illustrates timing when the scan
line Gi in the i-th row is selected, timing 5703a of on/off of the
first thin film transistor 5603a, timing 5703b of on/off of the
second thin film transistor 5603b, timing 5703c of on/off of the
third thin film transistor 5603c, and a signal 5721_J input to the
wiring 5621_J in the J-th column.
[0206] In the first sub-selection period T1, the second
sub-selection period T2, and the third sub-selection period T3,
different video signals are input to the wirings 5621_1 to 5621_M.
For example, a video signal input to the wiring 5621_J in the first
sub-selection period T1 is input to the signal line Sj-2, a video
signal input to the wiring 5621_J in the second sub-selection
period T2 is input to the signal line Sj-1, and a video signal
input to the wiring 5621_J in the third sub-selection period T3 is
input to the signal line Sj. In addition, the video signals input
to the wiring 5621_J in the first sub-selection period T1, the
second sub-selection period T2, and the third sub-selection period
T3 are denoted by Data_j-2, Data_j-1, and Data_j.
[0207] As shown in FIG. 17, in the first sub-selection period T1,
the first thin film transistor 5603a is turned on, and the second
thin film transistor 5603b and the third thin film transistor 5603c
are turned off. At this time, Data_j-2 input to the wiring 5621_J
is input to the signal line Sj-2 via the first thin film transistor
5603a. In the second sub-selection period T2, the second thin film
transistor 5603b is turned on, and the first thin film transistor
5603a and the third thin film transistor 5603c are turned off. At
this time, Data_j-1 input to the wiring 5621_J is input to the
signal line Sj-1 via the second thin film transistor 5603b. In the
third sub-selection period T3, the third thin film transistor 5603c
is turned on, and the first thin film transistor 5603a and the
second thin film transistor 5603b are turned off. At this time,
Data_j input to the wiring 5621_J is input to the signal line Sj
via the third thin film transistor 5603c.
[0208] As described above, in the signal-line driver circuit of
FIG. 16, one gate selection period is divided into three; thus,
video signals can be input to three signal lines through one wiring
5621 in one gate selection period. Therefore, in the signal-line
driver circuit of FIG. 16, the number of connections between the
substrate provided with the driver IC 5601 and the substrate
provided with the pixel portion can be reduced to approximately one
third of the number of signal lines. The number of connections is
reduced to approximately one third of the number of signal lines,
so that the reliability, yield, and the like of the signal-line
driver circuit of FIG. 16 can be improved.
[0209] Note that there are no particular limitations on the
arrangement, the number, a driving method, and the like of the thin
film transistors, as long as one gate selection period is divided
into a plurality of sub-selection periods and video signals are
input to a plurality of signal lines from one wiring in the
respective sub-selection periods as illustrated in FIG. 17.
[0210] For example, when video signals are input to three or more
signal lines from one wiring in three or more sub-selection
periods, it is only necessary to add a thin film transistor and a
wiring for controlling the thin film transistor. Note that when one
gate selection period is divided into four or more sub-selection
periods, one sub-selection period becomes shorter. Therefore, one
gate selection period is preferably divided into two or three
sub-selection periods.
[0211] As another example, as shown in a timing chart of FIG. 18,
one selection period may be divided into a pre-charge period Tp,
the first sub-selection period T1, the second sub-selection period
T2, and the third sub-selection period T3. Further, the timing
chart of FIG. 18 shows timing when the scan line Gi in the i-th row
is selected, timing 5803a of on/off of the first thin film
transistor 5603a, timing 5803b of on/off of the second thin film
transistor 5603b, timing 5803c of on/off of the third thin film
transistor 5603c, and a signal 5821_J input to the wiring 5621_J in
the J-th column. As shown in FIG. 18, the first thin film
transistor 5603a, the second thin film transistor 5603b, and the
third thin film transistor 5603c are turned on in the pre-charge
period Tp. At this time, precharge voltage Vp input to the wiring
5621_J is input to each of the signal line Sj-2, the signal line
Sj-1, and the signal line Sj via the first thin film transistor
5603a, the second thin film transistor 5603b, and the third thin
film transistor 5603c. In the first sub-selection period T1, the
first thin film transistor 5603a is turned on, and the second thin
film transistor 5603b and the third thin film transistor 5603c are
turned off. At this time, Data_j-2 input to the wiring 5621_J is
input to the signal line Sj-2 via the first thin film transistor
5603a. In the second sub-selection period T2, the second thin film
transistor 5603b is turned on, and the first thin film transistor
5603a and the third thin film transistor 5603c are turned off. At
this time, Data_j-1 input to the wiring 5621_J is input to the
signal line Sj-1 via the second thin film transistor 5603b. In the
third sub-selection period T3, the third thin film transistor 5603c
is turned on, and the first thin film transistor 5603a and the
second thin film transistor 5603b are turned off At this time,
Data_j input to the wiring 5621_J is input to the signal line Sj
via the third thin film transistor 5603c.
[0212] As described above, in the signal-line driver circuit of
FIG. 16, to which the timing chart of FIG. 18 is applied, a signal
line can be pre-charged by providing a pre-charge selection period
before sub-selection periods. Thus, a video signal can be written
to a pixel at a high speed. Note that portions in FIG. 18 similar
to those in FIG. 17 are denoted by the same reference numerals, and
detailed description of the same portions and portions having
similar functions is omitted.
[0213] Further, a structure of a scan line driver circuit is
described. The scan line driver circuit includes a shift register
and a buffer. Additionally, the scan line driver circuit may
include a level shifter in some cases. In the scan line driver
circuit, when the clock signal (CLK) and the start pulse signal
(SP) are input to the shift register, a selection signal is
generated. The generated selection signal is buffered and amplified
by the buffer, and the resulting signal is supplied to a
corresponding scan line. Gate electrodes of transistors in pixels
of one line are connected to the scan line. Since the transistors
in the pixels of one line have to be turned on all at once, a
buffer which can supply a large current to a thin film transistor
in each pixel is used.
[0214] One mode of the shift register used for part of the
scan-line driver circuit is described with reference to FIG. 19 and
FIG. 20.
[0215] FIG. 19 illustrates a circuit configuration of the shift
register. The shift register illustrated in FIG. 19 includes a
plurality of flip-flops, flip-flops 5701_1 to 5701.sub.--n. The
shift register is operated with input of a first clock signal, a
second clock signal, a start pulse signal, and a reset signal.
[0216] Connection relations of the shift register in FIG. 19 are
described. The flip-flop 5701_1 of a first stage is connected to a
first wiring 5711, a second wiring 5712, a fourth wiring 5714, a
fifth wiring 5715, a seventh wiring 5717_1, and a seventh wiring
5717_2. The flip-flop 5717_2 of a second stage is connected to a
third wiring 5713, the fourth wiring 5714, the fifth wiring 5715,
the seventh wiring 5717_1, the seventh wiring 5717_2, and a seventh
wiring 5717_3.
[0217] In a similar manner, the flip-flop 5701.sub.--i (any one of
the flip-flops 5701_1 to 5701.sub.--n) of an i-th stage is
connected to one of the second wiring 5712 and the third wiring
5713, the fourth wiring 5714, the fifth wiring 5715, a seventh
wiring 5717.sub.--i-1, a seventh wiring 5717.sub.--i, and a seventh
wiring 5717.sub.--i+1. Here, when the "i" is an odd number, the
flip-flop 5701.sub.--i of the i-th stage is connected to the second
wiring 5712; when the "i" is an even number, the flip-flop
5701.sub.--i of the i-th stage is connected to the third wiring
5713.
[0218] The flip-flop 5701.sub.--n of an n-th stage is connected to
one of the second wiring 5712 and the third wiring 5713, the fourth
wiring 5714, the fifth wiring 5715, a seventh wiring 5717n-1, the
seventh wiring 5717.sub.--n, and a sixth wiring 5716.
[0219] Note that the first wiring 5711, the second wiring 5712, the
third wiring 5713, and the sixth wiring 5716 may be referred to as
a first signal line, a second signal line, a third signal line, and
a fourth signal line, respectively. The fourth wiring 5714 and the
fifth wiring 5715 may be referred to as a first power supply line
and a second power supply line, respectively.
[0220] Next, FIG. 20 illustrates details of the flip-flop in FIG.
19. A flip-flop illustrated in FIG. 20 includes a first thin film
transistor 5571, a second thin film transistor 5572, a third thin
film transistor 5573, a fourth thin film transistor 5574, a fifth
thin film transistor 5575, a sixth thin film transistor 5576, a
seventh thin film transistor 5577, and an eighth thin film
transistor 5578. Each of the first thin film transistor 5571, the
second thin film transistor 5572, the third thin film transistor
5573, the fourth thin film transistor 5574, the fifth thin film
transistor 5575, the sixth thin film transistor 5576, the seventh
thin film transistor 5577, and the eighth thin film transistor 5578
is an n-channel transistor and is turned on when the gate-source
voltage (V.sub.gs) exceeds the threshold voltage (V.sub.th).
[0221] In addition, the flip-flop illustrated in FIG. 20 includes a
first wiring 5501, a second wiring 5502, a third wiring 5503, a
fourth wiring 5504, a fifth wiring 5505, and a sixth wiring
5506.
[0222] Note that all thin film transistors here are
enhancement-mode n-channel transistors; however, the present
invention is not limited thereto. For example, the driver circuit
can be operated using depression-mode n-channel transistors.
[0223] Next, connection structures of the flip-flop shown in FIG.
20 are described below.
[0224] A first electrode (one of a source electrode and a drain
electrode) of the first thin film transistor 5571 is connected to
the fourth wiring 5504. A second electrode (the other of the source
electrode and the drain electrode) of the first thin film
transistor 5571 is connected to the third wiring 5503.
[0225] A first electrode of the second thin film transistor 5572 is
connected to the sixth wiring 5506. A second electrode of the
second thin film transistor 5572 is connected to the third wiring
5503.
[0226] A first electrode of the third thin film transistor 5573 is
connected to the fifth wiring 5505, and a second electrode of the
third thin film transistor 5573 is connected to a gate electrode of
the second thin film transistor 5572. A gate electrode of the third
thin film transistor 5573 is connected to the fifth wiring
5505.
[0227] A first electrode of the fourth thin film transistor 5574 is
connected to the sixth wiring 5506. A second electrode of the
fourth thin film transistor 5574 is connected to a gate electrode
of the second thin film transistor 5572. A gate electrode of the
fourth thin film transistor 5574 is connected to a gate electrode
of the first thin film transistor 5571.
[0228] A first electrode of the fifth thin film transistor 5575 is
connected to the fifth wiring 5505. A second electrode of the fifth
thin film transistor 5575 is connected to the gate electrode of the
first thin film transistor 5571. A gate electrode of the fifth thin
film transistor 5575 is connected to the first wiring 5501.
[0229] A first electrode of the sixth thin film transistor 5576 is
connected to the sixth wiring 5506. A second electrode of the sixth
thin film transistor 5576 is connected to the gate electrode of the
first thin film transistor 5571. A gate electrode of the sixth thin
film transistor 5576 is connected to the gate electrode of the
second thin film transistor 5572.
[0230] A first electrode of the seventh thin film transistor 5577
is connected to the sixth wiring 5506. A second electrode of the
seventh thin film transistor 5577 is connected to the gate
electrode of the first thin film transistor 5571. A gate electrode
of the seventh thin film transistor 5577 is connected to the second
wiring 5502.
[0231] A first electrode of the eighth thin film transistor 5578 is
connected to the sixth wiring 5506. A second electrode of the
eighth thin film transistor 5578 is connected to the gate electrode
of the second thin film transistor 5572. A gate electrode of the
eighth thin film transistor 5578 is connected to the first wiring
5501.
[0232] Note that the points at which the gate electrode of the
first thin film transistor 5571, the gate electrode of the fourth
thin film transistor 5574, the second electrode of the fifth thin
film transistor 5575, the second electrode of the sixth thin film
transistor 5576, and the second electrode of the seventh thin film
transistor 5577 are connected are each referred to as a node 5543.
The points at which the gate electrode of the second thin film
transistor 5572, the second electrode of the third thin film
transistor 5573, the second electrode of the fourth thin film
transistor 5574, the gate electrode of the sixth thin film
transistor 5576, and the second electrode of the eighth thin film
transistor 5578 are connected are each referred to as a node
5544.
[0233] Note that the first wiring 5501, the second wiring 5502, the
third wiring 5503, and the fourth wiring 5504 may be referred to as
a first signal line, a second signal line, a third signal line, and
a fourth signal line, respectively. The fifth wiring 5505 and the
sixth wiring 5506 may be referred to as a first power supply line
and a second power supply line, respectively.
[0234] In the flip-flop 5701.sub.--i of the i-th stage, the first
wiring 5501 in FIG. 20 is connected to the seventh wiring
5717.sub.--i-1 in FIG. 19. The second wiring 5502 in FIG. 20 is
connected to the seventh wiring 5717.sub.--i+1 in FIG. 19. The
third wiring 5503 in FIG. 20 is connected to the seventh wiring
5717.sub.--i. The sixth wiring 5506 in FIG. 20 is connected to the
fifth wiring 5715.
[0235] If the "i" is an odd number, the fourth wiring 5504 in FIG.
20 is connected to the second wiring 5712 in FIG. 19; if the "i" is
an even number, the fourth wiring 5504 in FIG. 20 is connected to
the third wiring 5713 in FIG. 19. In addition, the fifth wiring
5505 in FIG. 20 is connected to the fourth wiring 5714 in FIG.
19.
[0236] Note that in the flip-flop 5701_1 of the first stage, the
first wiring 5501 in FIG. 20 is connected to the first wiring 5711
in FIG. 19. In addition, in the flip-flop 5701.sub.--n of the n-th
stage, the second wiring 5502 in FIG. 20 is connected to the sixth
wiring 5716 in FIG. 19.
[0237] In addition, the signal line driver circuit and the scan
line driver circuit can be formed using only the n-channel TFTs
described in any of Embodiments 1 to 4. The n-channel TFT described
in any of Embodiments 1 to 4 has a high mobility, and thus a
driving frequency of a driver circuit can be increased. Further, in
the case of the n-channel TFT described in any of Embodiments 1 to
4, since parasitic capacitance is reduced by using an oxide
semiconductor layer typified by an In--Ga--Zn--O-based
non-single-crystal film, frequency characteristics (also referred
to as f characteristics) is favorable. For example, the scan-line
driver circuit including the n-channel TFT described in Embodiments
1 to 4 can operate at high speed; therefore, it is possible to
increase the frame frequency or to achieve insertion of a black
screen, for example.
[0238] In addition, when the channel width of the transistor in the
scan line driver circuit is increased or a plurality of scan line
driver circuits are provided, for example, higher frame frequency
can be realized. When a plurality of scan line driver circuits are
provided, a scan line driver circuit for driving scan lines of
even-numbered rows is provided on one side and a scan line driver
circuit for driving scan lines of odd-numbered rows is provided on
the opposite side; thus, an increase in frame frequency can be
realized. Furthermore, the use of the plurality of scan line driver
circuits for output of signals to the same scan line is
advantageous in increasing the size of a display device.
[0239] Further, when an active matrix light-emitting display device
which is an example of a semiconductor device is manufactured, a
plurality of thin film transistors are arranged in at least one
pixel, and thus a plurality of scan line driver circuits are
preferably arranged. FIG. 15B illustrates an example of a block
diagram of an active matrix light-emitting display device.
[0240] The light-emitting display device illustrated in FIG. 15B
includes, over a substrate 5400, a pixel portion 5401 including a
plurality of pixels each provided with a display element, a first
scan-line driver circuit 5402 and a second scan-line driver circuit
5404 that selects a pixel, and a signal-line driver circuit 5403
that controls a video signal input to the selected pixel.
[0241] In the case where the video signal input to a pixel of the
light-emitting display device illustrated in FIG. 15B is a digital
signal, the pixel is put in a light-emitting state or a
non-light-emitting state by switching on/off of a transistor. Thus,
grayscale can be displayed using an area grayscale method or a time
grayscale method. An area grayscale method refers to a driving
method in which one pixel is divided into a plurality of subpixels
and the respective subpixels are driven independently based on
video signals so that grayscale is displayed. Further, a time
grayscale method refers to a driving method in which a period
during which a pixel emits light is controlled so that grayscale is
displayed.
[0242] Since the response time of a light-emitting element is
higher than that of a liquid crystal element or the like, the
light-emitting element is more suitable for a time grayscale method
than the liquid crystal element. Specifically, in the case of
displaying with a time grayscale method, one frame period is
divided into a plurality of subframe periods. Then, in accordance
with video signals, the light-emitting element in the pixel is
brought into a light-emitting state or a non-light-emitting state
in each subframe period. By dividing one frame period into a
plurality of subframe periods, the total length of time, in which a
pixel actually emits light in one frame period, can be controlled
by video signals so that grayscale can be displayed.
[0243] Note that in the example of the light-emitting display
device illustrated in FIG. 15B, when two switching TFTs are
arranged in one pixel, the first scan-line driver circuit 5402
generates a signal which is input to a first scan line serving as a
gate wiring of one of the two switching TFTs, and the second
scan-line driver circuit 5404 generates a signal which is input to
a second scan line serving as a gate wiring of the other of the two
switching TFTs. However, one scan-line driver circuit may generate
both the signal which is input to the first scan line and the
signal which is input to the second scan line. In addition, for
example, there is a possibility that a plurality of scan lines used
for controlling the operation of the switching element are provided
in each pixel, depending on the number of the switching TFTs
included in one pixel. In this case, one scan line driver circuit
may generate all signals that are input to the plurality of scan
lines, or a plurality of scan line driver circuits may generate
signals that are input to the plurality of scan lines.
[0244] Also in the light-emitting display device, a part of a
driver circuit that can include n-channel TFTs among driver
circuits can be formed over the same substrate as the thin film
transistors of the pixel portion. In addition, the signal line
driver circuit and the scan line driver circuit can be formed using
only the n-channel TFTs described in any of Embodiments 1 to 4.
[0245] Through the above process, a display device having stable
electric characteristics and high reliability as a semiconductor
device can be manufactured.
[0246] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 6
[0247] The thin film transistor described in any of Embodiments 1
to 4 can be manufactured, and the thin film transistor can be used
for a pixel portion and further for a driver circuit, so that a
semiconductor device having a display function (also referred to as
a display device) can be manufactured. Further, part or whole of a
driver circuit can be formed over the same substrate as a pixel
portion, using the thin film transistor described in any of
Embodiments 1 to 4, whereby a system-on-panel can be obtained.
[0248] The display device includes a display element. As the
display element, a liquid crystal element (also referred to as a
liquid crystal display element) or a light-emitting element (also
referred to as a light-emitting display element) can be used. The
light-emitting element includes, in its category, an element whose
luminance is controlled by a current or a voltage, and specifically
includes, in its category, an inorganic electroluminescent (EL)
element, an organic EL element, and the like. Furthermore, a
display medium whose contrast is changed by an electric effect,
such as electronic ink, can be used.
[0249] In addition, the display device includes a panel in which
the display element is sealed, and a module in which an IC or the
like including a controller is mounted on the panel. The display
device also relates to an element substrate, which corresponds to
an embodiment before the display element is completed in a
manufacturing process of the display device, and the element
substrate is provided with means for supplying current to the
display element in each of a plurality of pixels. Specifically, the
element substrate may be in a state after only a pixel electrode of
the display element is formed, a state after a conductive film to
be a pixel electrode is formed and before the conductive film is
etched to form the pixel electrode, or any of other states.
[0250] Note that a display device in this specification means an
image display device, a display device, or a light source
(including a lighting device). Further, the "display device"
includes the following modules in its category: a module including
a connector such as a flexible printed circuit (FPC), a tape
automated bonding (TAB) tape, or a tape carrier package (TCP)
attached; a module having a TAB tape or a TCP which is provided
with a printed wiring board at the end thereof; and a module having
an integrated circuit (IC) which is directly mounted on a display
element by a chip on glass (COG) method.
[0251] The appearance and cross section of a liquid crystal display
panel which is one mode of a semiconductor device will be described
in this embodiment with reference to FIGS. 21A1 and 21A2 and FIG.
21B. FIGS. 21A1 and 21A2 are each a plan view of a panel in which
thin film transistors 4010 and 4011 and a liquid crystal element
4013, which are formed over a first substrate 4001, are sealed
between the first substrate 4001 and a second substrate 4006 with a
sealant 4005. The thin film transistors 4010 and 4011 are thin film
transistors having stable electric characteristics and high
reliability, which are described any of Embodiments 1 to 4 and
include the oxide semiconductor layer typified by an
In--Ga--Zn--O-based non-single-crystal film. FIG. 21B is a
cross-sectional view taken along line M-N of FIGS. 21A1 and
21A2.
[0252] The sealant 4005 is provided so as to surround a pixel
portion 4002 and a scan line driver circuit 4004 which are provided
over the first substrate 4001. The second substrate 4006 is
provided over the pixel portion 4002 and the scan line driver
circuit 4004. Therefore, the pixel portion 4002 and the scan line
driver circuit 4004 are sealed together with a liquid crystal layer
4008, by the first substrate 4001, the sealant 4005, and the second
substrate 4006. A signal line driver circuit 4003 that is formed
using a single crystal semiconductor film or a polycrystalline
semiconductor film over a substrate separately prepared is mounted
in a region that is different from the region surrounded by the
sealant 4005 over the first substrate 4001.
[0253] Note that the connection method of a driver circuit which is
separately formed is not particularly limited, and a COG method, a
wire bonding method, a TAB method, or the like can be used. FIG.
21A1 illustrates an example of mounting the signal line driver
circuit 4003 with a COG method, and FIG. 21A2 illustrates an
example of mounting the signal line driver circuit 4003 with a TAB
method.
[0254] The pixel portion 4002 and the scan line driver circuit 4004
provided over the first substrate 4001 include a plurality of thin
film transistors. FIG. 21B illustrates the thin film transistor
4010 included in the pixel portion 4002 and the thin film
transistor 4011 included in the scan line driver circuit 4004. Over
the thin film transistors 4010 and 4011, insulating layers 4020 and
4021 are provided.
[0255] As the thin film transistors 4010 and 4011, thin film
transistors having stable electric characteristics and high
reliability which are described in any of Embodiments 1 to 4 and
include the oxide semiconductor layer typified by an
In--Ga--Zn--O-based non-single-crystal film, can be used. In this
embodiment, the thin film transistors 4010 and 4011 are n-channel
thin film transistors.
[0256] A pixel electrode layer 4030 included in the liquid crystal
element 4013 is electrically connected to the thin film transistor
4010. A counter electrode layer 4031 of the liquid crystal element
4013 is provided for the second substrate 4006. A portion where the
pixel electrode layer 4030, the counter electrode layer 4031, and
the liquid crystal layer 4008 overlap with one another corresponds
to the liquid crystal element 4013. Note that the pixel electrode
layer 4030 and the counter electrode layer 4031 are provided with
an insulating layer 4032 and an insulating layer 4033 respectively
which each function as an alignment film, and the liquid crystal
layer 4008 is sandwiched between the pixel electrode layer 4030 and
the counter electrode layer 4031 with the insulating layers 4032
and 4033 therebetween.
[0257] Note that the first substrate 4001 and the second substrate
4006 can be formed of glass, metal (typically, stainless steel),
ceramic, or plastic. As plastic, a fiberglass-reinforced plastics
(FRP) plate, a polyvinyl fluoride (PVF) film, a polyester film, or
an acrylic resin film can be used. In addition, a sheet with a
structure in which an aluminum foil is sandwiched between PVF films
or polyester films can be used.
[0258] Reference numeral 4035 denotes a columnar spacer obtained by
selectively etching an insulating film and is provided to control
the distance between the pixel electrode layer 4030 and the counter
electrode layer 4031 (a cell gap). Alternatively, a spherical
spacer may also be used. In addition, the counter electrode layer
4031 is electrically connected to a common potential line formed
over the same substrate as the thin film transistor 4010. With use
of the common connection portion, the counter electrode layer 4031
and the common potential line can be electrically connected to each
other by conductive particles arranged between a pair of
substrates. Note that the conductive particles are included in the
sealant 4005.
[0259] Alternatively, liquid crystal exhibiting a blue phase for
which an alignment film is unnecessary may be used. A blue phase is
one of liquid crystal phases, which is generated just before a
cholesteric phase changes into an isotropic phase while temperature
of cholesteric liquid crystal is increased. Since the blue phase is
generated within an only narrow range of temperature, liquid
crystal composition containing a chiral agent at 5 wt % or more so
as to improve the temperature range is used for the liquid crystal
layer 4008. The liquid crystal composition which includes liquid
crystal exhibiting a blue phase and a chiral agent have such
characteristics that the response time is 10 .mu.s to 100 .mu.s,
which is short, the alignment process is unnecessary because the
liquid crystal composition has optical isotropy, and viewing angle
dependency is small.
[0260] Although the example of a transmissive liquid crystal
display device is described in this embodiment, one embodiment of
the present invention can also be applied to a reflective liquid
crystal display device and a transflective liquid crystal display
device.
[0261] While an example of the liquid crystal display device in
which the polarizing plate is provided on the outer side of the
substrate (on the viewer side) and the coloring layer and the
electrode layer used for a display element are provided on the
inner side of the substrate in that order is described in this
embodiment, the polarizing plate may be provided on the inner side
of the substrate. The stacked structure of the polarizing plate and
the coloring layer is not limited to this embodiment and may be set
as appropriate depending on materials of the polarizing plate and
the coloring layer or conditions of manufacturing process. Further,
a light-blocking film serving as a black matrix may be
provided.
[0262] In this embodiment, in order to reduce the unevenness of the
surface of the thin film transistors and to improve the reliability
of the thin film transistors, the thin film transistors which are
obtained in any of Embodiments 1 to 4 are covered with protective
films or insulating layers (the insulating layers 4020 and 4021)
which function as planarizing insulating films. Note that the
protective film is provided to prevent entry of contaminant
impurities such as organic substance, metal, or moisture existing
in air and is preferably a dense film. The protective film may be
formed with a single layer or a stacked layer of any of a silicon
oxide film, a silicon nitride film, a silicon oxynitride film, a
silicon nitride oxide film, an aluminum oxide film, an aluminum
nitride film, aluminum oxynitride film, and/or an aluminum nitride
oxide film using a sputtering method. Although an example in which
the protective film is formed using a sputtering method is
described in this embodiment, the present invention is not limited
to this method and a variety of methods may be employed.
[0263] The insulating layer 4020 having a layered structure can be
formed as the protective film. Here, a silicon oxide film is formed
using a sputtering method, as a first layer of the insulating layer
4020. The use of a silicon oxide film as a protective film has an
effect of preventing hillock of an aluminum film which is used as
the source and drain electrode layers.
[0264] Further, as a second layer of the protective film, an
insulating layer is formed. Here, a silicon nitride film is formed
using a sputtering method, as a second layer of the insulating
layer 4020. The use of the silicon nitride film as the protective
film can prevent mobile ions of sodium or the like from entering a
semiconductor region so that variation in electrical
characteristics of the TFT can be suppressed.
[0265] Further, after the protective film is formed, the oxide
semiconductor layer may be annealed (at 300.degree. C. to
400.degree. C.).
[0266] The insulating layer 4021 is formed as the planarizing
insulating film. As the insulating layer 4021, an organic material
having heat resistance such as polyimide, acrylic,
benzocyclobutene, polyamide, or epoxy can be used. Other than such
organic materials, it is also possible to use a low-dielectric
constant material (a low-k material), a siloxane-based resin, PSG
(phosphosilicate glass), BPSG (borophosphosilicate glass), or the
like. Note that the insulating layer 4021 may be formed by stacking
a plurality of insulating films formed of these materials.
[0267] Note that the siloxane-based resin corresponds to a resin
including a Si--O--Si bond formed using a siloxane-based material
as a starting material. The siloxane-based resin may include as a
substituent an organic group (for example, an alkyl group or an
aryl group) or a fluoro group. In addition, the organic group may
include a fluoro group.
[0268] A formation method of the insulating layer 4021 is not
particularly limited, and the following method can be employed
depending on the material: a sputtering method, an SOG method, a
spin coating method, a dipping method, a spray coating method, a
droplet discharge method (an ink-jet method, screen printing,
offset printing, or the like), a doctor knife, a roll coater, a
curtain coater, a knife coater, or the like. In the case of forming
the insulating layer 4021 with use of a material solution,
annealing (300.degree. C. to 400.degree. C.) may be performed on
the oxide semiconductor layer at the same time as a baking step.
When the baking of the insulating layer 4021 and the annealing of
the oxide semiconductor layer are performed at the same time, a
semiconductor device can be manufactured efficiently.
[0269] The pixel electrode layer 4030 and the counter electrode
layer 4031 can be formed using a light-transmitting conductive
material such as indium oxide including tungsten oxide, indium zinc
oxide including tungsten oxide, indium oxide including titanium
oxide, indium tin oxide including titanium oxide, indium tin oxide
(hereinafter referred to as ITO), indium zinc oxide, indium tin
oxide to which silicon oxide is added, or the like.
[0270] Conductive compositions including a conductive high molecule
(also referred to as a conductive polymer) can be used for the
pixel electrode layer 4030 and the counter electrode layer 4031.
The pixel electrode formed using the conductive composition
preferably has a sheet resistance of less than or equal to 10000
ohms per square and a transmittance of greater than or equal to 70%
at a wavelength of 550 nm. Further, the resistivity of the
conductive high molecule included in the conductive composition is
preferably less than or equal to 0.1.OMEGA.cm.
[0271] As the conductive high molecule, a so-called .pi.-electron
conjugated conductive polymer can be used. For example, polyaniline
or a derivative thereof, polypyrrole or a derivative thereof,
polythiophene or a derivative thereof, a copolymer of two or more
kinds of them, and the like can be given.
[0272] Further, a variety of signals and potentials are supplied to
the signal line driver circuit 4003 which is formed separately, the
scan line driver circuit 4004, or the pixel portion 4002 from an
FPC 4018.
[0273] In this embodiment, a connection terminal electrode 4015 is
formed from the same conductive film as that of the pixel electrode
layer 4030 included in the liquid crystal element 4013, and a
terminal electrode 4016 is formed from the same conductive film as
that of the source and drain electrode layers of the thin film
transistors 4010 and 4011.
[0274] The connection terminal electrode 4015 is electrically
connected to a terminal included in the FPC 4018 via an anisotropic
conductive film 4019
[0275] Note that FIGS. 21A1 and 21A1 and FIG. 21B illustrate an
example in which the signal line driver circuit 4003 is formed
separately and mounted on the first substrate 4001; however, this
embodiment is not limited to this structure. The scan line driver
circuit may be separately formed and then mounted, or only part of
the signal line driver circuit or part of the scan line driver
circuit may be separately formed and then mounted.
[0276] FIG. 22 illustrates an example in which a liquid crystal
display module is formed as a semiconductor device by using a TFT
substrate 2600 formed using the TFT described in any of Embodiments
1 to 4.
[0277] FIG. 22 illustrates an example of a liquid crystal display
module, in which the TFT substrate 2600 and a counter substrate
2601 are fixed to each other with a sealant 2602, and a pixel
portion 2603 including a TFT or the like, a display element 2604
including a liquid crystal layer, and a coloring layer 2605 are
provided between the substrates to form a display region. The
coloring layer 2605 is necessary to perform color display. In the
RGB system, respective coloring layers corresponding to colors of
red, green, and blue are provided for respective pixels. Polarizing
plates 2606 and 2607 and a diffusion plate 2613 are provided
outside the TFT substrate 2600 and the counter substrate 2601. A
light source includes a cold cathode tube 2610 and a reflective
plate 2611, and a circuit substrate 2612 is connected to a wiring
circuit portion 2608 of the TFT substrate 2600 by a flexible wiring
board 2609 and includes an external circuit such as a control
circuit or a power source circuit. The polarizing plate and the
liquid crystal layer may be stacked with a retardation plate
therebetween.
[0278] The liquid crystal display module can employ a TN (Twisted
Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe
Field Switching) mode, an MVA (Multi-domain Vertical Alignment)
mode, a PVA (Patterned Vertical Alignment) mode, an ASM (Axially
Symmetric aligned Micro-cell) mode, an OCB (Optical Compensated
Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an
AFLC (Anti Ferroelectric Liquid Crystal) mode, or the like.
[0279] Through the above process, a liquid crystal display panel
having stable electric characteristics and high reliability as a
semiconductor device can be manufactured.
[0280] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 7
[0281] In this embodiment, an example of electronic paper will be
described as a semiconductor device to which the thin film
transistor described in any of Embodiments 1 to 4 is applied.
[0282] FIG. 23 illustrates active matrix electronic paper as an
example of a semiconductor device. A thin film transistor 581 used
for the semiconductor device can be manufactured by application of
the thin film transistor described in any one of Embodiments 1 to
4.
[0283] The electronic paper in FIG. 23 is an example of a display
device using a twisting ball display system. The twisting ball
display system refers to a method in which spherical particles each
colored in black and white are arranged between a first electrode
layer and a second electrode layer which are electrode layers used
for a display element, and a potential difference is generated
between the first electrode layer and the second electrode layer to
control orientation of the spherical particles, so that display is
performed.
[0284] The thin film transistor 581 sealed between a substrate 580
and a substrate 596 is a thin film transistor with a bottom-gate
structure, and a source or drain electrode layer thereof is in
contact with a first electrode layer 587 through an opening formed
in insulating layers 583, 584, and 585, whereby the thin film
transistor 581 is electrically connected to the first electrode
layer 587. Between the first electrode layer 587 and a second
electrode layer 588, spherical particles 589 each having a black
region 590a, a white region 590b, and a cavity 594 around the
regions which is filled with liquid are provided. A space around
the spherical particles 589 is filled with a filler 595 such as a
resin (see FIG. 23). In this embodiment, the first electrode layer
587 corresponds to a pixel electrode, and the second electrode
layer 588 corresponds to a common electrode. The second electrode
layer 588 is electrically connected to a common potential line
provided over the same substrate as the thin film transistor 581. A
common connection portion described in Embodiment 2 is used,
whereby the second electrode layer 588 provided on a substrate 596
and the common potential line can be electrically connected to each
other through the conductive particles arranged between a pair of
substrates.
[0285] Further, instead of the twisting ball, an electrophoretic
element can also be used. A microcapsule having a diameter of
approximately 10 .mu.m to 200 .mu.m in which transparent liquid,
positively charged white microparticles, and negatively charged
black microparticles are encapsulated, is used. In the microcapsule
which is provided between the first electrode layer and the second
electrode layer, when an electric field is applied by the first
electrode layer and the second electrode layer, the white
microparticles and the black microparticles move to opposite sides,
so that white or black can be displayed. A display element using
this principle is an electrophoretic display element and is
generally called electronic paper. The electrophoretic display
element has higher reflectance than a liquid crystal display
element, and thus, an auxiliary light is unnecessary, power
consumption is low, and a display portion can be recognized in a
dim place. In addition, even when power is not supplied to the
display portion, an image which has been displayed once can be
maintained. Accordingly, a displayed image can be stored even if a
semiconductor device having a display function (which may be
referred to simply as a display device or a semiconductor device
provided with a display device) is distanced from an electric wave
source.
[0286] In this way, an electrophoretic display element utilizes a
so-called dielectrophoretic effect by which a substance having a
high dielectric constant moves to a high-electric field region. An
electrophoretic display device using an electrophoretic display
element does not need to use a polarizer, which is required in a
liquid crystal display device.
[0287] A solution in which the above microcapsules are dispersed in
a solvent is referred to as electronic ink. This electronic ink can
be printed on a surface of glass, plastic, cloth, paper, or the
like. Furthermore, by using a color filter or particles that have a
pigment, color display can also be achieved.
[0288] In addition, if a plurality of the above microcapsules is
arranged as appropriate over an active matrix substrate so as to be
interposed between two electrodes, an active matrix display device
can be completed, and display can be performed by application of an
electric field to the microcapsules. For example, the active matrix
substrate obtained with the thin film transistor described in any
of Embodiments 1 to 4 can be used.
[0289] Note that the microparticles may be formed using a single
material selected from a conductive material, an insulating
material, a semiconductor material, a magnetic material, a liquid
crystal material, a ferroelectric material, an electroluminescent
material, an electrochromic material, or a magnetophoretic material
or formed of a composite material of any of these.
[0290] Through this process, electronic paper having stable
electric characteristics and high reliability as a semiconductor
device can be manufactured.
[0291] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 8
[0292] In this embodiment, an example of a light-emitting display
device will be described as the semiconductor device to which the
thin film transistor described in any of Embodiments 1 to 4 is
applied. As a display element included in a display device, a
light-emitting element utilizing electroluminescence is described
here. Light-emitting elements utilizing electroluminescence are
classified according to whether a light-emitting material is an
organic compound or an inorganic compound. In general, the former
is referred to as an organic EL element, and the latter is referred
to as an inorganic EL element.
[0293] In an organic EL element, by application of voltage to a
light-emitting element, electrons and holes are separately injected
from a pair of electrodes into a layer containing a light-emitting
organic compound, and current flows. The carriers (electrons and
holes) are recombined, and thus, the light-emitting organic
compound is excited. The light-emitting organic compound returns to
a ground state from the excited state, thereby emitting light.
Owing to such a mechanism, this light-emitting element is referred
to as a current-excitation light-emitting element.
[0294] The inorganic EL elements are classified according to their
element structures into a dispersion-type inorganic EL element and
a thin-film inorganic EL element. A dispersion-type inorganic EL
element has a light-emitting layer where particles of a
light-emitting material are dispersed in a binder, and its light
emission mechanism is donor-acceptor recombination type light
emission that utilizes a donor level and an acceptor level. A
thin-film inorganic EL element has a structure where a
light-emitting layer is sandwiched between dielectric layers, which
are further sandwiched between electrodes, and its light emission
mechanism is localized type light emission that utilizes
inner-shell electron transition of metal ions. Note that an example
of an organic EL element as a light-emitting element is described
here.
[0295] FIG. 24 illustrates an example of a pixel structure to which
digital time grayscale driving can be applied, as an example of a
semiconductor device to which one embodiment of the present
invention is applied.
[0296] A structure and operation of a pixel to which digital time
grayscale driving can be applied are described. Here, an example is
described in which one pixel includes two n-channel transistors
each of which is described in any of Embodiments 1 to 4 and each of
which includes the oxide semiconductor layer typified by an
In--Ga--Zn--O-based non-single-crystal film in a channel formation
region.
[0297] A pixel 6400 includes a switching transistor 6401, a driver
transistor 6402, a light-emitting element 6404, and a capacitor
6403. A gate of the switching transistor 6401 is connected to a
scan line 6406, a first electrode (one of a source electrode and a
drain electrode) of the switching transistor 6401 is connected to a
signal line 6405, and a second electrode (the other of the source
electrode and the drain electrode) of the switching transistor 6401
is connected to a gate of the driver transistor 6402. The gate of
the driver transistor 6402 is connected to a power supply line 6407
via the capacitor 6403, a first electrode of the driver transistor
6402 is connected to the power supply line 6407, and a second
electrode of the driver transistor 6402 is connected to a first
electrode (pixel electrode) of the light-emitting element 6404. A
second electrode of the light-emitting element 6404 corresponds to
a common electrode 6408. The common electrode 6408 is electrically
connected to a common potential line provided over the same
substrate, and the connection portion may be used as a common
connection portion.
[0298] The second electrode (common electrode 6408) of the
light-emitting element 6404 is set to a low power supply potential.
Note that the low power supply potential is a potential satisfying
the low power supply potential<a high power supply potential
with reference to the high power supply potential that is set to
the power supply line 6407. As the low power supply potential, GND,
0 V, or the like may be employed, for example. A potential
difference between the high power supply potential and the low
power supply potential is applied to the light-emitting element
6404 and current is supplied to the light-emitting element 6404, so
that the light-emitting element 6404 emits light. Here, in order to
make the light-emitting element 6404 emit light, each potential is
set so that the potential difference between the high power supply
potential and the low power supply potential is a forward threshold
voltage or higher of the light-emitting element 6404.
[0299] Note that gate capacitor of the driver transistor 6402 may
be used as a substitute for the capacitor 6403, so that the
capacitor 6403 can be omitted. The gate capacitor of the driver
transistor 6402 may be formed between the channel region and the
gate electrode.
[0300] In the case of a voltage-input voltage driving method, a
video signal is input to the gate of the driver transistor 6402 so
that the driver transistor 6402 is in either of two states of being
sufficiently turned on or turned off. That is, the driver
transistor 6402 operates in a linear region. Since the driver
transistor 6402 operates in the linear region, a voltage higher
than the voltage of the power supply line 6407 is applied to the
gate of the driver transistor 6402. Note that a voltage higher than
or equal to (voltage of the power supply line+Vth of the driver
transistor 6402) is applied to the signal line 6405.
[0301] In the case of performing analog grayscale driving instead
of digital time grayscale driving, the same pixel structure as in
FIG. 24 can be used by changing signal input.
[0302] In the case of performing analog grayscale driving, a
voltage higher than or equal to (forward voltage of the
light-emitting element 6404+Vth of the driver transistor 6402) is
applied to the gate of the driver transistor 6402. The forward
voltage of the light-emitting element 6404 indicates a voltage at
which a desired luminance is obtained, and includes at least
forward threshold voltage. The video signal by which the driver
transistor 6402 operates in a saturation region is input, so that
current can be supplied to the light-emitting element 6404. In
order for the driver transistor 6402 to operate in the saturation
region, the potential of the power supply line 6407 is set higher
than the gate potential of the driver transistor 6402. When an
analog video signal is used, it is possible to feed current to the
light-emitting element 6404 in accordance with the video signal and
perform analog grayscale driving.
[0303] Note that the present invention is not limited to the pixel
structure shown in FIG. 24. For example, a switch, a resistor, a
capacitor, a transistor, a logic circuit, or the like may be added
to the pixel shown in FIG. 24.
[0304] Next, a structure of a light emitting element will be
described with reference to FIGS. 25A to 25C. Here, a
cross-sectional structure of a pixel will be described by taking an
n-channel driving TFT as an example. Driving TFTs 7001, 7011, and
7021 used for the semiconductor devices illustrated in FIGS. 25A to
25C can be manufactured similarly to the thin film transistors
described in any of Embodiments 1 to 4 and are thin film
transistors having stable electric characteristics and high
reliability, in which an oxide semiconductor layer typified by an
In--Ga--Zn--O-based non-single-crystal film is used.
[0305] In order to extract light emitted from the light-emitting
element, at least one of an anode and a cathode is required to
transmit light. A light-emitting element can have a top emission
structure, in which light emission is extracted through the surface
opposite to the substrate; a bottom emission structure, in which
light emission is extracted through the surface on the substrate
side; or a dual emission structure, in which light emission is
extracted through the surface opposite to the substrate and the
surface on the substrate side. The pixel structure of the present
invention can be applied to a light-emitting element having any of
these emission structures.
[0306] A light emitting element having a top emission structure is
described with reference to FIG. 25A.
[0307] FIG. 25A is a cross-sectional view of a pixel in the case
where the TFT 7001 serving as a driver TFT is an n-channel TFT and
light generated in a light-emitting element 7002 is emitted to pass
through an anode 7005. In FIG. 25A, a cathode 7003 of the
light-emitting element 7002 and the TFT 7001, which is the driving
TFT, are electrically connected to each other, and a light-emitting
layer 7004 and the anode 7005 are sequentially stacked over the
cathode 7003. The cathode 7003 can be formed using a variety of
conductive materials as long as they have a low work function and
reflect light. For example, Ca, Al, MgAg, AlLi, or the like is
desirably used. The light-emitting layer 7004 may be formed using a
single layer or a plurality of layers stacked. When the
light-emitting layer 7004 is formed using a plurality of layers,
the light-emitting layer 7004 is formed by stacking an
electron-injection layer, an electron-transport layer, a
light-emitting layer, a hole-transport layer, and a hole-injection
layer in this order over the cathode 7003. It is not necessary to
form all of these layers. The anode 7005 is made of a
light-transmitting conductive material such as indium oxide
including tungsten oxide, indium zinc oxide including tungsten
oxide, indium oxide including titanium oxide, indium tin oxide
including titanium oxide, indium tin oxide (hereinafter referred to
as ITO), indium zinc oxide, or indium tin oxide to which silicon
oxide is added.
[0308] The light-emitting element 7002 corresponds to a region
where the light-emitting layer 7004 is sandwiched between the
cathode 7003 and the anode 7005. In the case of a pixel shown in
FIG. 25A, light which is emitted from the light emitting element
7002 is emitted to the anode 7005 side as indicated by an
arrow.
[0309] Next, a light emitting element having a bottom emission
structure is described with reference to FIG. 25B. FIG. 25B is a
cross-sectional view of a pixel in the case where the driving TFT
7011 is of an n-type and light is emitted from a light-emitting
element 7012 to a cathode 7013 side. In FIG. 25B, the cathode 7013
of the light-emitting element 7012 is formed over a
light-transmitting conductive film 7017 which is electrically
connected to the driver TFT 7011, and a light-emitting layer 7014
and an anode 7015 are stacked in this order over the cathode 7013.
A light-blocking film 7016 for reflecting or blocking light may be
formed to cover the anode 7015 when the anode 7015 has a
light-transmitting property. The cathode 7013 can be formed using
any of a variety of conductive materials as long as it has a low
work function similarly to FIG. 25A. The cathode 7013 is formed to
have a thickness that can transmit light (preferably, approximately
5 nm to 30 nm). For example, an aluminum film with a thickness of
20 nm can be used as the cathode 7013. Then, the light emitting
layer 7014 may be formed using either a single layer or a stacked
layer of a plurality of layers similarly to FIG. 25A. Although the
anode 7015 is not required to be transmit light, a
light-transmitting conductive material can be used to form the
anode 7015 similarly to FIG. 25A. As the light-blocking film 7016,
a metal or the like that reflects light can be used for example;
however, it is not limited to a metal film. For example, a resin or
the like to which black pigments are added can also be used.
[0310] The light-emitting element 7012 corresponds to a region
where the light-emitting layer 7014 is sandwiched between the
cathode 7013 and the anode 7015. In the case of a pixel shown in
FIG. 25B, light which is emitted from the light emitting element
7012 is emitted to the cathode 7013 side as indicated by an
arrow.
[0311] Description is made on a light emitting element having the
dual emission structure with reference to FIG. 25C. In FIG. 25C, a
cathode 7023 of a light-emitting element 7022 is formed over a
light-transmitting conductive film 7027 which is electrically
connected to a driver TFT 7021, and a light-emitting layer 7024 and
an anode 7025 are stacked in this order over the cathode 7023. The
cathode 7023 can be formed using any of a variety of conductive
materials as long as it has a low work function similarly to FIG.
25A. The cathode 7023 is formed to have a thickness that can
transmit light. For example, a film of Al having a thickness of 20
nm can be used as the cathode 7023. Then, the light emitting layer
7024 may be formed using either a single layer or a stacked layer
of a plurality of layers similarly to FIG. 25A. A
light-transmitting conductive material can be used to form the
anode 7025 as in the case of FIG. 25A.
[0312] The light-emitting element 7022 corresponds to a region
where the cathode 7023, the light-emitting layer 7024, and the
anode 7025 overlap with one another. In the case of the pixel shown
in FIG. 25C, light which is emitted from the light emitting element
7022 is emitted to both the anode 7025 side and the cathode 7023
side as indicated by arrows.
[0313] Note that, although the organic EL elements are described
here as the light-emitting elements, an inorganic EL element can
also be provided as a light-emitting element.
[0314] In this embodiment, the example is described in which a thin
film transistor (a driving TFT) which controls the driving of a
light-emitting element is electrically connected to the
light-emitting element; however, a structure may be employed in
which a TFT for current control is connected between the driving
TFT and the light-emitting element.
[0315] The semiconductor device described in this embodiment is not
limited to the structures illustrated in FIGS. 25A to 25C, and can
be modified in various ways based on the spirit of techniques
according to the present invention.
[0316] Next, the appearance and cross section of a light-emitting
display panel (also referred to as a light-emitting panel) which
corresponds to one embodiment of the semiconductor device to which
the thin film transistor described in any of Embodiments 1 to 4 is
applied is described with reference to FIGS. 26A and 26B. FIG. 26A
is a plan view of a panel in which a thin film transistor and a
light-emitting element formed over a first substrate are sealed
between the first substrate and a second substrate with a sealant,
and FIG. 26B is a cross-sectional view taken along H-I of FIG.
26A.
[0317] A sealant 4505 is provided so as to surround a pixel portion
4502, signal line driver circuits 4503a and 4503b, and scan line
driver circuits 4504a and 4504b which are provided over a first
substrate 4501. In addition, a second substrate 4506 is provided
over the pixel portion 4502, the signal line driver circuits 4503a
and 4503b, and the scan line driver circuits 4504a and 4504b.
Accordingly, the pixel portion 4502, the signal line driver
circuits 4503a and 4503b, and the scan line driver circuits 4504a
and 4504b are sealed together with a filler 4507, by the first
substrate 4501, the sealant 4505, and the second substrate 4506. It
is preferable that a panel be packaged (sealed) with a protective
film (such as a laminate film or an ultraviolet curable resin film)
or a cover material with high air-tightness and little
degasification so that the panel is not exposed to the outside air,
in this manner.
[0318] The pixel portion 4502, the signal-line driver circuits
4503a and 4503b, and the scan-line driver circuits 4504a and 4504b
provided over the first substrate 4501 each include a plurality of
thin film transistors, and a thin film transistor 4510 included in
the pixel portion 4502 and a thin film transistor 4509 included in
the signal-line driver circuit 4503a are illustrated as an example
in FIG. 26B.
[0319] As the thin film transistors 4509 and 4510, thin film
transistors having stable electric characteristics and high
reliability, which are described in any of Embodiments 1 to 4 and
include the oxide semiconductor layer typified by an
In--Ga--Zn--O-based non-single-crystal film, can be used. In this
embodiment, the thin film transistors 4509 and 4510 are n-channel
thin film transistors.
[0320] Moreover, reference numeral 4511 denotes a light-emitting
element. A first electrode layer 4517 which is a pixel electrode
included in the light-emitting element 4511 is electrically
connected to a source electrode layer or a drain electrode layer of
the thin film transistor 4510. Note that a structure of the
light-emitting element 4511 is a stacked-layer structure of the
first electrode layer 4517, the electroluminescent layer 4512, and
the second electrode layer 4513, but there is no particular
limitation on the structure. The structure of the light-emitting
element 4511 can be changed as appropriate depending on the
direction in which light is extracted from the light-emitting
element 4511, or the like.
[0321] A partition 4520 is formed using an organic resin film, an
inorganic insulating film, or organic polysiloxane. It is
particularly preferable that the partition 4520 be formed using a
photosensitive material and an opening be formed over the first
electrode layer 4517 so that a sidewall of the opening is formed as
an inclined surface with continuous curvature.
[0322] The electroluminescent layer 4512 may be formed with a
single layer or a plurality of layers stacked.
[0323] A protective film may be formed over the second electrode
layer 4513 and the partition 4520 in order to prevent entry of
oxygen, hydrogen, moisture, carbon dioxide, or the like into the
light-emitting element 4511. As the protective film, a silicon
nitride film, a silicon nitride oxide film, a DLC film, or the like
can be formed.
[0324] In addition, a variety of signals and potentials are
supplied to the signal line driver circuits 4503a and 4503b, the
scan line driver circuits 4504a and 4504b, or the pixel portion
4502 from FPCs 4518a and 4518b.
[0325] In this embodiment, a connection terminal electrode 4515 is
formed from the same conductive film as the first electrode layer
4517 included in the light-emitting element 4511, and a terminal
electrode 4516 is formed from the same conductive film as the
source and drain electrode layers included in the thin film
transistors 4509 and 4510.
[0326] The connection terminal electrode 4515 is electrically
connected to a terminal included in the FPC 4518a via an
anisotropic conductive film 4519.
[0327] As the second substrate 4506 located in the direction in
which light is extracted from the light-emitting element 4511 needs
to have a light-transmitting property. In that case, a
light-transmitting material such as a glass plate, a plastic plate,
a polyester film, or an acrylic film is used for the second
substrate 4506.
[0328] As the filler 4507, an ultraviolet curable resin or a
thermosetting resin can be used, in addition to an inert gas such
as nitrogen or argon. For example, PVC (polyvinyl chloride),
acrylic, polyimide, an epoxy resin, a silicone resin, PVB
(polyvinyl butyral), or EVA (ethylene vinyl acetate) can be used.
In this embodiment, nitrogen is used for the filler 4507.
[0329] In addition, if needed, an optical film, such as a
polarizing plate, a circularly polarizing plate (including an
elliptically polarizing plate), a retardation plate (a quarter-wave
plate or a half-wave plate), or a color filter, may be provided as
appropriate on a light-emitting surface of the light-emitting
element. Further, the polarizing plate or the circularly polarizing
plate may be provided with an anti-reflection film. For example,
anti-glare treatment by which reflected light can be diffused by
projections and depressions on the surface so as to reduce the
glare can be performed.
[0330] The signal line driver circuits 4503a and 4503b and the
scanning line driver circuits 4504a and 4504b may be mounted as
driver circuits formed using a single crystal semiconductor film or
a polycrystalline semiconductor film over a substrate separately
prepared. In addition, only the signal-line driver circuit or only
part thereof, or only the scan-line driver circuit or only part
thereof may be separately formed and mounted. This embodiment is
not limited to the structure illustrated in FIGS. 26A and 26B.
[0331] Through this process, a light-emitting display device
(display panel) having stable electric characteristics and high
reliability as a semiconductor device can be manufactured.
[0332] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 9
[0333] A semiconductor device to which the thin film transistor
described in any of Embodiments 1 to 4 is applied can be applied as
electronic paper. Electronic paper can be used for electronic
appliances of a variety of fields as long as they can display data.
For example, electronic paper can be applied to an e-book reader
(electronic book), a poster, an advertisement in a vehicle such as
a train, or displays of various cards such as a credit card.
Examples of such electronic devices are illustrated in FIGS. 27A
and 27B and FIG. 28.
[0334] FIG. 27A illustrates a poster 2631 formed using electronic
paper. In the case where an advertising medium is printed paper,
the advertisement is replaced by hands; however, by using the
electronic paper, the advertising display can be changed in a short
time. Furthermore, stable images can be obtained without display
defects. Note that the poster may have a configuration capable of
wirelessly transmitting and receiving data.
[0335] FIG. 27B illustrates an advertisement 2632 in a vehicle such
as a train. In a case where an advertising medium is paper, a man
replaces advertising, but in a case where it is electronic paper,
much manpower is not needed and replacement of advertising can be
conducted in short time. Furthermore, stable images can be obtained
without display defects. Note that the advertisement in a vehicle
may have a configuration capable of wirelessly transmitting and
receiving data.
[0336] FIG. 28 illustrates an example of an electronic book 2700.
For example, the e-book reader 2700 includes two housings, a
housing 2701 and a housing 2703. The housing 2701 and the housing
2703 are combined with a hinge 2711 so that the e-book reader 2700
can be opened and closed with the hinge 2711 as an axis. With such
a structure, the e-book reader 2700 can operate like a paper
book.
[0337] A display portion 2705 and a display portion 2707 are
incorporated in the housing 2701 and the housing 2703,
respectively. The display portion 2705 and the display portion 2707
may display one image or different images. When the display
portions display different images, text can be displayed on the
right display portion (the display portion 2705 in FIG. 28) and an
image can be displayed on the left display portion (the display
portion 2707 in FIG. 28), for example.
[0338] Further, FIG. 28 illustrates an example where the housing
2701 is provided with an operation portion and the like. For
example, the housing 2701 is provided with a power switch 2721, an
operation key 2723, a speaker 2725, and the like. With the
operation key 2723, pages can be turned. Note that a keyboard, a
pointing device, and the like may be provided on the same surface
as the display portion of the housing. Furthermore, an external
connection terminal (an earphone terminal, a USB terminal, a
terminal that can be connected to various cables such as an AC
adapter and a USB cable, or the like), a recording medium insertion
portion, and the like may be provided on the back surface or the
side surface of the housing. Moreover, the e-book reader 2700 may
have a function of an electronic dictionary.
[0339] The e-book reader 2700 may have a configuration capable of
wirelessly transmitting and receiving data. Through wireless
communication, desired book data or the like can be purchased and
downloaded from an electronic book server.
[0340] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Embodiment 10
[0341] The semiconductor device including the thin film transistor
described in any of Embodiments 1 to 4 can be applied to a variety
of electronic devices (including game machines). Examples of
electronic devices are a television set (also referred to as a
television or a television receiver), a monitor of a computer or
the like, a camera such as a digital camera or a digital video
camera, a digital photo frame, a mobile phone handset (also
referred to as a mobile phone or a mobile phone device), a portable
game console, a portable information terminal, an audio reproducing
device, a large-sized game machine such as a pachinko machine, and
the like.
[0342] FIG. 29A illustrates an example of a television device 9600.
In the television set 9600, a display portion 9603 is incorporated
in a housing 9601. The display portion 9603 can display images.
Here, the housing 9601 is supported by a stand 9605.
[0343] The television set 9600 can be operated with an operation
switch of the housing 9601 or a separate remote controller 9610.
Channels and volume can be controlled with an operation key 9609 of
the remote controller 9610 so that an image displayed on the
display portion 9603 can be controlled. Furthermore, the remote
controller 9610 may be provided with a display portion 9607 for
displaying data output from the remote controller 9610.
[0344] Note that the television set 9600 is provided with a
receiver, a modem, and the like. With the use of the receiver,
general television broadcasting can be received. Moreover, when the
display device is connected to a communication network with or
without wires via the modem, one-way (from a sender to a receiver)
or two-way (between a sender and a receiver or between receivers)
information communication can be performed.
[0345] FIG. 29B illustrates an example of a digital photo frame
9700. For example, in the digital photo frame 9700, a display
portion 9703 is incorporated in a housing 9701. The display portion
9703 can display a variety of images. For example, the display
portion 9703 can display data of an image taken with a digital
camera or the like and function as a normal photo frame.
[0346] Note that the digital photo frame 9700 is provided with an
operation portion, an external connection portion (a USB terminal,
a terminal that can be connected to various cables such as a USB
cable, or the like), a recording medium insertion portion, and the
like. Although these components may be provided on the surface on
which the display portion is provided, it is preferable to provide
them on the side surface or the back surface for the design of the
digital photo frame 9700. For example, a memory storing data of an
image taken with a digital camera is inserted in the recording
medium insertion portion of the digital photo frame, whereby the
image data can be transferred and then displayed on the display
portion 9703.
[0347] The digital photo frame 9700 may be configured to transmit
and receive data wirelessly. The structure may be employed in which
desired image data is transferred wirelessly to be displayed.
[0348] FIG. 30A illustrates a portable game machine including a
housing 9881 and a housing 9891 which are jointed with a connector
9893 so as to be able to open and close. A display portion 9882 and
a display portion 9883 are incorporated in the housing 9881 and the
housing 9891, respectively. The portable game machine illustrated
in FIG. 30A additionally includes a speaker portion 9884, a storage
medium inserting portion 9886, an LED lamp 9890, an input means
(operation keys 9885, a connection terminal 9887, a sensor 9888
(including a function of measuring force, displacement, position,
speed, acceleration, angular speed, the number of rotations,
distance, light, liquid, magnetism, temperature, chemical
substance, sound, time, hardness, electric field, current, voltage,
electric power, radiation, flow rate, humidity, tilt angle,
vibration, smell, or infrared ray), and a microphone 9889), and the
like. Needless to say, the structure of the portable game machine
is not limited to the above, and may be any structure as long as a
semiconductor device according to one embodiment of the present
invention is provided. Moreover, another accessory may be provided
as appropriate. The portable game machine illustrated in FIG. 30A
has a function of reading out a program or data stored in a storage
medium to display it on the display portion and a function of
sharing information with another portable game machine by wireless
communication. The functions of the portable game machine
illustrated in FIG. 30A are not limited to these, and the portable
game machine can have a variety of functions.
[0349] FIG. 30B illustrates an example of a slot machine 9900 which
is a large-sized game machine. In the slot machine 9900, a display
portion 9903 is incorporated in a housing 9901. In addition, the
slot machine 9900 includes an operation means such as a start lever
or a stop switch, a coin slot, a speaker, and the like. Needless to
say, the structure of the slot machine 9900 is not limited to the
above, and may be any structure as long as at least a semiconductor
device according to one embodiment of the present invention is
provided. Moreover, another accessory may be provided as
appropriate.
[0350] FIG. 31A illustrates an example of a mobile phone 1000. The
mobile phone 1000 includes a display portion 1002 incorporated in a
housing 1001, an operation button 1003, an external connection port
1004, a speaker 1005, a microphone 1006 and the like.
[0351] When the display portion 1002 of the mobile phone 1000
illustrated in FIG. 31A is touched with a finger or the like, data
can be input into the mobile phone 1000. Furthermore, operations
such as making calls and composing mails can be performed by
touching the display portion 1002 with a finger or the like.
[0352] There are mainly three screen modes of the display portion
1002. The first mode is a display mode mainly for displaying
images. The second mode is an input mode mainly for inputting data
such as text. The third mode is a display-and-input mode in which
two modes of the display mode and the input mode are combined.
[0353] For example, in a case of making a call or composing a mail,
a text input mode mainly for inputting text is selected for the
display portion 1002 so that text displayed on a screen can be
input. In that case, it is preferable to display a keyboard or
number buttons on almost all area of the screen of the display
portion 1002.
[0354] When a detection device including a sensor for detecting
inclination, such as a gyroscope or an acceleration sensor, is
provided inside the mobile phone 1000, display in the screen of the
display portion 1002 can be automatically switched by determining
the installation direction of the mobile phone 1000 (whether the
mobile phone 1000 is placed horizontally or vertically for a
landscape mode or a portrait mode).
[0355] The screen modes are switched by touching the display
portion 1002 or operating the operation button 1003 of the housing
1001. Alternatively, the screen modes may be switched depending on
the kind of the image displayed on the display portion 1002. For
example, when a signal of an image displayed on the display portion
is a signal of moving image data, the screen mode is switched to
the display mode. When the signal is a signal of text data, the
screen mode is switched to the input mode.
[0356] Further, in the input mode, when input by touching the
display portion 1002 is not performed for a certain period while a
signal detected by the optical sensor in the display portion 1002
is detected, the screen mode may be controlled so as to be switched
from the input mode to the display mode.
[0357] The display portion 1002 may function as an image sensor.
For example, an image of a palm print, a fingerprint, or the like
is taken when the display portion 1002 is touched with a palm or a
finger, whereby personal identification can be performed. Further,
by providing a backlight or a sensing light source which emits a
near-infrared light in the display portion, an image of a finger
vein, a palm vein, or the like can be taken.
[0358] FIG. 31B illustrates another example of a mobile phone. The
mobile phone in FIG. 31B has a display device 9410 in a housing
9411, which includes a display portion 9412 and operation buttons
9413, and a communication device 9400 in a housing 9401, which
includes operation buttons 9402, an external input terminal 9403, a
microphone 9404, a speaker 9405, and a light-emitting portion 9406
that emits light when a phone call is received. The display device
9410 which has a display function can be detached from or attached
to the communication device 9400 which has a phone function by
moving in two directions represented by arrows. Thus, the display
device 9410 and the communication device 9400 can be attached to
each other along their short sides or long sides. In addition, when
only the display function is needed, the display device 9410 can be
detached from the communication device 9400 and used alone. Images
or input information can be transmitted or received by wireless or
wire communication between the communication device 9400 and the
display device 9410, each of which has a rechargeable battery.
[0359] Note that the structure described in this embodiment can be
combined with any of the structures described in other embodiments
as appropriate.
Example 1
[0360] In this example, evaluation results of the conductivity of
an oxide semiconductor which is used for the oxide semiconductor
layer and the buffer layer in any of the above embodiments will be
described.
[0361] In this example, an In--Ga--Zn--O-based non-single-crystal
film (hereinafter referred to as an IGZO film) formed using a
sputtering method in an atmosphere of an argon gas and an oxygen
gas and an In--Ga--Zn--O--N-based non-single-crystal film
(hereinafter referred to as an IGZON film) formed using a
sputtering method in an atmosphere of an argon gas and a nitrogen
gas were each formed over a glass substrate. The IGZO film and the
IGZON film, which had been formed, were subjected to reverse
sputtering treatment, heat treatment in an air atmosphere, and heat
treatment in a nitrogen atmosphere. After each heat treatment, the
sheet resistance values of the IGZO film and the IGZON film were
measured and the conductivity thereof was calculated. Each step of
this example is described in detail below.
[0362] First, the glass substrates were cleaned with pure water.
Note that product name EAGLE 2000 (manufactured by Corning Inc.,
alkali-free glass) was used for the glass substrate. Next, the IGZO
film and the IGZON film were each formed over the glass substrate.
The IGZO film was formed using a target of an oxide semiconductor
of In.sub.2O.sub.3:Ga.sub.2O.sub.3:ZnO=1:1:1 under conditions where
the distance between the substrate and the target was 60 mm, the
pressure was 0.4 Pa, direct current (DC) power was 0.5 kW, the film
thickness was 50 nm, the flow rate ratio of film formation gasses
of Ar:O.sub.2 was 30:15 (sccm), and the film formation temperature
was room temperature. The IGZON film was formed under conditions
similar to those of the IGZO film except that the flow rate ratio
of film formation gases of Ar to N.sub.2 was 35:5 (sccm). Note that
the IGZO film and the IGZON film were each formed to a thickness of
approximately 50 nm, and the actual thickness was measured by an
ellipsometer after the formation. Then, the sheet resistance values
of the IGZO film and the IGZON film were measured by a sheet
resistance measuring apparatus. Note that conductivity can be
obtained by a sheet resistance value and a film thickness.
[0363] Next, the IGZO film and the IGZON were subjected to reverse
sputtering treatment under conditions where an Ar gas flow rate was
50 sccm, the pressure was 0.6 Pa, direct current (DC) power was 0.2
kW, and treatment time was 3 minutes. After the reverse sputtering,
the sheet resistance values of the IGZO film and the IGZON film
were measured and the conductivity thereof was calculated.
[0364] Next, the IGZO film and the IGZON film were repeatedly
subjected to heat treatment in an air atmosphere (hereinafter
referred to as air baking) under conditions where a treatment
temperature was 350.degree. C. and treatment time was 1 hour, and
heat treatment in a nitrogen atmosphere (hereinafter referred to as
nitrogen baking) under the same conditions of a treatment
temperature and treatment time. The heat treatments were performed
in two ways, a process A and a process B. In the process A, after
the reverse sputtering treatment, air baking, nitrogen baking,
second air baking, and second nitrogen baking were performed in
this order. In the process B, after the reverse sputtering
treatment, nitrogen baking, air baking, and second nitrogen baking
were performed in this order. In other words, the first air baking
in the process A was omitted in the process B.
TABLE-US-00001 TABLE 1 Conductivity of Conductivity of Process A
IGZO film (S/cm) IGZON film (S/cm) Directly after <<0.01
<<0.01 film formation After reverse 1.72 3.49 sputtering
After air baking <<0.01 <<0.01 After nitrogen baking
<<0.01 1.82 After air baking <<0.01 <<0.01 After
nitrogen baking <<0.01 1.65
TABLE-US-00002 TABLE 2 Conductivity of Conductivity of Process B
IGZO film (S/cm) IGZON film (S/cm) Directly after <<0.01
<<0.01 film formation After reverse 1.72 3.49 sputtering
After nitrogen baking 139 290 After air baking <<0.01
<<0.01 After nitrogen baking 0.15 65.2
[0365] Table 1 shows the conductivity of the IGZO film and the
IGZON film in the process A, and Table 2 shows the conductivity of
the IGZO film and the IGZON film in the process B. The unit for the
conductivity is S/cm both in Table 1 and in Table 2. Note that the
conductivity of a film whose sheet resistance value is too high to
be measured by the sheet resistance measuring apparatus is
represented as <<0.01 S/cm.
[0366] In each of Table 1 and Table 2, when the IGZO film and the
IGZON film which were formed through the same process are compared
to each other, the conductivity of the IGZON film is higher than
that of the IGZO film. In addition, after the reverse sputtering
treatment, the conductivity of the IGZO film and the IGZON film is
increased. The conductivity of the IGZO film and the IGZON film is
reduced after the air baking and increased after the nitrogen
baking. In particular, the conductivity of the IGZO film and the
IGZON film after the first nitrogen baking in the process B shown
in Table 2 is greatly high as compared to that of the others.
[0367] When the conductivity of the IGZO film and the IGZON film
after the first nitrogen baking in the process A shown in Table 1
and that of the IGZO film and the IGZON film after the second
nitrogen baking in the process B shown in Table 2 are compared to
each other, the conductivity of each of the IGZO film and the IGZON
film in the latter case is higher than that in the former case,
even though the conductivity becomes 0.01 S/cm or less after the
air baking in both the processes A and B. This shows that the
conductivity of the IGZO film and the IGZON film is decreased when
the atmosphere of the first heat treatment after the film formation
is an air atmosphere, and increased when the atmosphere is a
nitrogen atmosphere. Furthermore, the following is presumed: even
when heat treatments in different atmospheres are performed a
plurality of times after the film formation, effect of subsequent
heat treatment in a different atmosphere is lowered depending on
the atmosphere of the first heat treatment after the film
formation.
[0368] Accordingly, in any of the above embodiments, an
In--Ga--Zn--O--N-based non-single-crystal film formed in an
atmosphere of an argon gas and a nitrogen gas is preferable as the
buffer layer. In addition, the In--Ga--Zn--O--N-based
non-single-crystal film which is subjected to reverse sputtering
treatment and heat treatment in a nitrogen atmosphere is
preferable. By using such a film, the conductivity of the buffer
layer can be increased, an ohmic contact can be formed between the
oxide semiconductor layer and the source and drain electrode
layers, and electric characteristics of the thin film transistor
can be stabilized. In the case where the oxide semiconductor layer
is subjected to heat treatment in an air atmosphere, it is
preferable that the oxide semiconductor layer is subjected to the
heat treatment in a nitrogen atmosphere in advance of the heat
treatment in an air atmosphere. Alternatively, when an
In--Ga--Zn--O-based non-single-crystal film which is formed in an
atmosphere of an argon gas and an oxygen gas and subjected to heat
treatment in an air atmosphere is used as the oxide semiconductor
layer, the conductivity of the oxide semiconductor layer can be
reduced and off current can be reduced. Further alternatively, when
an In--Ga--Zn--O-based non-single-crystal film which is formed in
an atmosphere of an argon gas and an oxygen gas and subjected to
heat treatment in a nitrogen atmosphere is used, the conductivity
of the oxide semiconductor layer can be increased and on current
can be increased. Accordingly, an atmosphere of heat treatment for
the oxide semiconductor layer may be changed depending on a
purpose.
[0369] This application is based on Japanese Patent Application
serial no. 2009-131161 filed with Japan Patent Office on May 29,
2009, the entire contents of which are hereby incorporated by
reference.
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