U.S. patent application number 12/751642 was filed with the patent office on 2010-09-30 for photoelectronic element and the manufacturing method thereof.
Invention is credited to Chiu-Lin YAO.
Application Number | 20100244077 12/751642 |
Document ID | / |
Family ID | 42783012 |
Filed Date | 2010-09-30 |
United States Patent
Application |
20100244077 |
Kind Code |
A1 |
YAO; Chiu-Lin |
September 30, 2010 |
PHOTOELECTRONIC ELEMENT AND THE MANUFACTURING METHOD THEREOF
Abstract
A photoelectronic element includes a composite substrate
including an electrically insulative substrate having a chamber; an
intermediate layer; and an electrically conductive substrate; a
bonding layer including an electrically conductive region and an
electrically insulative region; a first current spreading layer; a
first semiconductor stacked layer including a first semiconductor
layer, an active layer, and a second semiconductor layer; a current
blocking layer; a second current spreading layer; and a first
electrode.
Inventors: |
YAO; Chiu-Lin; (Hsinchu,
TW) |
Correspondence
Address: |
Muncy, Geissler, Olds & Lowe, PLLC
4000 Legato Road, Suite 310
FAIRFAX
VA
22033
US
|
Family ID: |
42783012 |
Appl. No.: |
12/751642 |
Filed: |
March 31, 2010 |
Current U.S.
Class: |
257/98 ; 257/432;
257/434; 257/99; 257/E31.11; 257/E31.127; 257/E33.055;
257/E33.067 |
Current CPC
Class: |
H01L 33/22 20130101;
H01L 33/145 20130101; H01L 2924/0002 20130101; H01L 33/46 20130101;
H01L 33/38 20130101; H01L 33/0093 20200501; H01L 33/642 20130101;
H01L 33/44 20130101; H01L 33/641 20130101; H01L 2924/0002 20130101;
H01L 2924/00 20130101 |
Class at
Publication: |
257/98 ; 257/432;
257/434; 257/99; 257/E33.055; 257/E31.11; 257/E31.127;
257/E33.067 |
International
Class: |
H01L 33/00 20100101
H01L033/00; H01L 31/02 20060101 H01L031/02; H01L 31/0232 20060101
H01L031/0232 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 31, 2009 |
TW |
098110800 |
Apr 10, 2009 |
CN |
200910134306.5 |
Claims
1. A photoelectronic element comprising: a composite substrate
comprising an electrically insulative substrate having a chamber
and an electrically conductive substrate disposed under the
electrically insulative substrate and within the chamber wherein
the electrically conductive substrate includes a contact surface; a
bonding layer disposed on the composite substrate and comprising an
electrically conductive region disposed on the contact surface and
an electrically insulative region adjacent to the electrically
conductive region; a first semiconductor stacked layer disposed on
the bonding layer and comprising a first active layer; and a first
electrode disposed on the first semiconductor stacked layer,
wherein the electrically conductive region is directly under the
first electrode.
2. The photoelectronic element of claim 1, wherein the material of
the composite substrate comprising Cu, Al, metal, composite
materials, Metal Matrix Composite (MMC), Ceramic Matrix Composite
(CMC), Si, IP, ZnSe, AlN, GaAs, SiC, GaP, GaAsP, ZnSe, ZnO, InP,
LiGaO.sub.2, or LiAlO.sub.2.
3. The photoelectronic element of claim 1, wherein the material of
the electrically conductive substrate comprising Cu, Al, In, Sn,
Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, Tl,
As, Se, Te, Po, Ir, Re, Rh, Os, W, Li, Na, K, Be, Mg, Ca, Sr, Ba,
Zr, Mo, La, Cu--Sn, Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn,
Ni--Co, Au alloy, AuSn, InAg, InAu, AuBe, AuGe, AuZn, PbSn, or
PdIn, and/or the material of the electrically insulative substrate
comprising Sapphire, Diamond, Glass, Quartz, Acryl, ZnO, or
AlN.
4. The photoelectronic element of claim 1, wherein the composite
substrate further includes an intermediate layer disposed between
the electrically insulative substrate and the electrically
conductive substrate, wherein the intermediate layer comprises: a
first reflective layer disposed between the electrically insulative
substrate and the electrically conductive substrate; and an
absorbing layer disposed between the first reflective layer and the
electrically conductive substrate.
5. The photoelectronic element of claim 4, wherein the material of
the absorbing layer comprises Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti,
Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, Tl, As, Se, Te, Po, Ir,
Re, Rh, Os, W, Li, Na, K, Be, Mg, Ca, Sr, Ba, Zr, Mo, La, Cu--Sn,
Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn, Ni--Co, and Au
alloy.
6. The photoelectronic element of claim 1, wherein the material of
the electrically conductive region comprising In, Sn, Al, Au, Pt,
Zn, Ag, Ti, Pb, Pd, Ge, Cu, Ni, AuSn, InAg, InAu, AuBe, AuGe, Zn,
PbSn, or PdIn; and/or the material of the electrically insulative
region comprising Su8, BCB, PFCB, Epoxy, Acrylic Resin, COC, PMMA,
PET, PC, Polyetherimide, Fluorocarbon Polymer, Silicone, Glass,
Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, SiN.sub.x, SOG, Tetraethyl
Orthosilane (TEOS), or other organic bonding materials; and/or the
material of the first semiconductor stacked layer comprises Ga, Al,
In, As, P, N, Zn, cd, Se, Sb, Cd, Te, Hg, S, H, Mg, Sn, B, Pb, C,
or Si.
7. The photoelectronic element of claim 1, wherein the first active
layer comprises a high band gap region directly under the first
electrode.
8. The photoelectronic element of claim 7, wherein the high band
gap region, the electrically conductive region, and the first
electrode have patterned structures, and the patterned structures
of the high band gap region and the electrically conductive region
have patterns substantially the same with that of the patterned
structure of the first electrode.
9. The photoelectronic element of claim 1, further comprising a
first current spreading layer disposed between the bonding layer
and the first semiconductor stacked layer; and a window layer
disposed between the first current spreading layer and first
semiconductor stacked layer; wherein the material of the first
current spreading layer comprising ITO, InO, SnO, CTO, ATO, AZO,
ZTO, ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, In, Sn, Al, Au, Pt, Zn,
Ag, Ti, Pb, Pd, Ge, Cu, Ni, InAg, InAu, AuBe, AuGe, AuZn, PbSn,
PdIn, or AuSn; and/or the material of the window layer comprising
GaP, ITO, InO, SnO, CTO, ATO, ZnO, AZO, ZTO, GaAs, GaAsP, AlGaAs,
or GaN.
10. The photoelectronic element of claim 9, wherein the window
layer has a rough bottom surface.
11. The photoelectronic element of claim 9, further comprising a
current blocking layer disposed between the first current spreading
layer and the window layer, and is directly above the electrically
conductive region; a second current spreading layer disposed
between the first semiconductor stacked layer and the first
electrode; and a current blocking layer disposed between the second
current spreading layer and the first electrode.
12. The photoelectronic element of claim 11, wherein the material
of the current blocking layer comprising Su8, BCB, PFCB, Epoxy,
Acrylic Resin, COC, PMMA, PET, PC, Polyetherimide, Fluorocarbon
Polymer, Silicone, Glass, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2,
SiN.sub.x, SOG, and Tetraethyl Orthosilane (TEOS); and/or the
material of the second current spreading layer comprising ITO, InO,
SnO, CTO, ATO, AZO, ZTO, ZnO, AlGaAs, GaN, GaP, GaAs, GaAsP, In,
Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, Ni, InAg, InAu, AuBe,
AuGe, AuZn, PbSn, PdIn, or AuSn.
13. The photoelectronic element of claim 11, wherein the area of
the top surface of each current blocking layer is not smaller than
that of the bottom surface of the first electrode or the top
surface of the electrically conductive region, and not larger than
that of the window layer or the second current spreading layer.
14. The photoelectronic element of claim 11, wherein the current
blocking layers, the contact surface, and the first electrode have
patterned structures, and the patterned structures of the current
blocking layers and the contact surface have patterns substantially
the same with that of the patterned structure of the first
electrode.
15. The photoelectronic element of claim 1, wherein the
electrically conductive region and the first electrode have
patterned structures, and the patterned structure of the
electrically conductive region have pattern substantially the same
with that of the patterned structure of the first electrode.
16. The photoelectronic element of claim 1, further comprising a
second semiconductor stacked layer disposed between the composite
substrate and the bonding layer, wherein the second semiconductor
stacked layer includes a second active layer, and is selected from
the group consisting of one or more than one material comprising
Ga, Al, In, As, P, N, Zn, cd, Se, Sb, Cd, Te, Hg, S, H, Mg, Sn, B,
Pb, C, or Si.
17. The photoelectronic element of claim 16, further comprising a
second reflective layer disposed between the composite substrate
and the second semiconductor stacked layer; and a third current
spreading layer disposed between the bonding layer and the second
semiconductor stacked layer.
18. The photoelectronic element of claim 16, wherein the second
semiconductor stacked layer or the first semiconductor stacked
layer has a rough top surface.
19. The photoelectronic element of claim 1, wherein the first
semiconductor stacked layer further comprising: a first
semiconductor layer disposed between the bonding layer and the
first active layer; and a second semiconductor layer disposed
between the first active layer and the first electrode and having a
rough top surface.
20. A photoelectronic element, comprising: a composite substrate
comprising an electrically insulative substrate; and an
electrically conductive substrate disposed under the electrically
insulative substrate and within the electrically insulative
substrate and comprising a contact surface; a bonding layer
disposed on the composite substrate and comprising an electrically
conductive region disposed on the contact surface for electrically
connecting thereto, and an electrically insulative region adjacent
to the electrically conductive region and disposed on the
electrically insulative substrate; a first semiconductor stacked
layer disposed on the bonding layer and comprising a first active
layer comprising a high band gap region directly above the
electrically conductive region; and a first electrode disposed on
the first semiconductor stacked layer, wherein the electrically
conductive region is directly under the first electrode.
21. The photoelectronic element of claim 20, wherein the composite
substrate further comprises an intermediate substrate disposed
between the electrically conductive substrate and the electrically
insulative substrate, and the photoelectronic element further
includes: a first reflective layer disposed between the
electrically insulative substrate and the electrically conductive
substrate; and an absorbing layer disposed between the first
reflective layer and the electrically conductive layer.
22. The photoelectronic element of claim 20, further comprising a
window layer disposed between the bonding layer and the first
semiconductor stacked layer, wherein the window layer has a rough
bottom surface.
23. The photoelectronic element of claim 20, wherein the high band
gap region, the contact surface, the electrically conductive
region, and the first electrode have patterned structures, and the
patterned structures of the high band gap region and the contact
surface have patterns substantially the same with that of the
patterned structure of the first electrode.
24. The photoelectronic element of claim 20, wherein the first
semiconductor stacked layer has a rough top surface.
25. A photoelectronic element, comprising: a composite substrate; a
bonding layer disposed on the composite substrate and comprising an
electrically conductive region disposed on the composite substrate;
and an electrically insulative region adjacent to the electrically
conductive region and disposed on the composite substrate; a first
semiconductor stacked layer disposed on the bonding layer and
comprising a first active layer; and a first electrode and a second
electrode respectively disposed on the first semiconductor stacked
layer, wherein the first electrode is directly above the
electrically conductive region.
26. The photoelectronic element of claim 25, wherein the
electrically conductive region and the first electrode have
patterned structures, and the patterned structure of the
electrically conductive region have pattern substantially the same
with that of the patterned structure of the first electrode.
27. The photoelectronic element of claim 25, further comprising: a
first current spreading layer disposed between the first
semiconductor stacked layer and the bonding layer; a second current
spreading layer disposed between the first semiconductor stacked
layer and the first electrode; and a window layer disposed between
the first semiconductor stacked layer and the first current
spreading layer.
28. A photoelectronic element, comprising: a composite substrate; a
bonding layer comprising an electrically conductive region disposed
on the composite substrate, and an electrically insulative region
adjacent to the electrically conductive region and disposed on the
composite substrate; a first semiconductor stacked layer disposed
on the bonding layer and comprising a first active layer comprising
a high band gap region; and a first electrode disposed on the first
semiconductor stacked layer, wherein the first electrode is
directly above the high band gap region.
29. The photoelectronic element of claim 28, wherein the
electrically conductive region, the first electrode, and the high
band gap region have patterned structures, and the patterned
structures of the electrically conductive region and the first
electrode have patterns substantially the same with that of the
patterned structure of the first electrode.
Description
TECHNICAL FIELD
[0001] The application relates to a photoelectronic element, and
more particularly to a photoelectronic element with a composite
substrate.
REFERENCE TO RELATED APPLICATION
[0002] The application claims the right of priority based on TW
application Ser. No. 098110800 filed on Mar. 31, 2009, which is
incorporated herein by reference and assigned to the assignee
herein.
DESCRIPTION OF BACKGROUND ART
[0003] Photoelectronic element includes many types, such as
Light-emitting Diode (LED), solar cell, and photo diode. Taking LED
for example, LED is a solid state semiconductor element comprising
a p-n junction formed between a p type semiconductor layer and an n
type semiconductor layer. When imposing a certain level of forward
voltage to the p-n junction, holes from the p type semiconductor
layer and electrons from the n type semiconductor layer are
combined to release light. The region of releasing the light is
generally called light-emitting region.
[0004] The features of LED mainly include small size, high
efficiency, long life, quick reaction, high reliability, and fine
color. So far, LED has been applied to electronic devices,
vehicles, signboards, and traffic signs. Along with the launch of
the full-color LED, LED has gradually replaced traditional lighting
apparatus such as fluorescent lights and incandescent lamps.
[0005] Each of the foregoing photoelectronic elements can further
connect a substrate thereof to a base via solders or adhesive
elements. Moreover, the base includes at least a circuit to
electrically connect with a contact of a light-emitting device or a
light-absorbing device via a conductive structure such as wire
lines.
SUMMARY OF THE DISCLOSURE
[0006] In accordance with a first embodiment of present
application, a photoelectronic element includes: a composite
substrate including an electrically insulative substrate having a
chamber, an intermediate layer, and an electrically conductive
substrate; a bonding layer including an electrically conductive
region and an electrically insulative region; a first current
spreading layer; a first semiconductor stacked layer including a
first semiconductor layer, a first active layer, and a second
semiconductor layer; a current blocking layer; a second current
spreading layer; and a first electrode.
[0007] In accordance with a second embodiment of present
application, the photoelectronic element further includes a window
layer.
[0008] In accordance with a third embodiment of present
application, the current blocking layer of the photoelectronic
element is disposed between the first current spreading layer and
the window layer.
[0009] In accordance with a forth embodiment of present
application, the first active layer of the photoelectronic element
includes a high band-gap region.
[0010] In accordance with a fifth embodiment of present
application, the photoelectronic element further includes a second
reflective layer; a second semiconductor stacked layer, and a third
current spreading layer.
[0011] In accordance with a sixth embodiment of present
application, the photoelectronic element further includes a second
electrode.
[0012] In accordance with a seventh embodiment of present
application, the current blocking layer of the photoelectronic
element is disposed between the first current spreading layer and
the window layer.
[0013] In accordance with an eighth embodiment of present
application, the first active layer of the photoelectronic element
further includes a high band gap region.
BRIEF DESCRIPTION OF THE DRAWINGS
[0014] FIGS. 1A-1G illustrate cross-sectional views of the
manufacturing process in accordance with a first embodiment of
present application.
[0015] FIG. 2A illustrates a cross-sectional view of the
photoelectronic element in accordance with a second embodiment of
present application.
[0016] FIG. 2B illustrates a cross-sectional view of the
photoelectronic element in accordance with a third embodiment of
present application.
[0017] FIG. 3 illustrates a cross-sectional view of the
photoelectronic element in accordance with a forth embodiment of
present application.
[0018] FIG. 4 illustrates a cross-sectional view of the
photoelectronic element in accordance with a fifth embodiment of
present application.
[0019] FIG. 5A illustrates a cross-sectional view of the
photoelectronic element in accordance with a sixth embodiment of
present application.
[0020] FIG. 5B illustrates a cross-sectional view of the
photoelectronic element in accordance with a seventh embodiment of
present application.
[0021] FIG. 5C illustrates a cross-sectional view of the
photoelectronic element in accordance with an eighth embodiment of
present application.
[0022] FIG. 6 illustrates a schematic diagram of a light-generating
device adapting a photoelectronic element as any one of the
embodiments of present application.
[0023] FIG. 7 illustrates a schematic diagram of a backlight module
adapting a photoelectronic element as any one of the embodiments of
present application.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0024] The embodiments of present application will be described in
detail and sketched in figures.
[0025] FIGS. 1A-1G illustrate cross-sectional views of the
manufacturing process in accordance with a first embodiment,
wherein FIGS. 1A-1C are cross-sectional figures of manufacturing a
composite substrate of a photoelectronic element shown in FIG. 1G.
As shown in FIG. 1C, a composite substrate 10 includes an
electrically insulative substrate 102, an electrically conductive
substrate 106, and an intermediate layer 104 disposed between the
electrically insulative substrate 102 and the electrically
conductive substrate 106. As shown in FIG. 1A, the electrically
insulative substrate 102 having a chamber 101 formed therein is
provided. The chamber 101 is a space formed by removing a part of
the electrically insulative substrate 102 and then is surrounded by
the exposed inside walls thereof. The method for forming the
chamber 101 includes etching or laser ablation. As shown in FIG.
1B, an intermediate layer 104 is formed under the electrically
insulative substrate 102 and between the chamber 101 and the
electrically insulative substrate 102. The intermediate layer 104
includes an absorbing layer 105 disposed under the electrically
insulative substrate 102 and between the chamber 101 and the
electrically insulative substrate 102, and a first reflective layer
103 disposed between the electrically insulative substrate 102 and
the absorbing layer 105. Referring to FIG. 1C, the electrically
conductive substrate 106 is formed under the intermediate layer 104
to form the composite substrate 10. Referring to FIGS. 1D-1E, a
bonding layer 12 is disposed on the composite substrate 10 and
includes an electrically conductive region 122 disposed on the
electrically conductive substrate 106 to be electrically in contact
with the electrically conductive substrate 106 and an electrically
insulative region 124 disposed on the electrically insulative
substrate 102, wherein the electrically insulative region 124
surrounds and is adjacent to the electrically conductive region
122, and directly contacts to the electrically insulative substrate
102. The term "adjacent to" means that the electrically insulative
region 124 directly contacts to the sidewalls of the electrically
conductive region 122. A first current spreading layer 14 is
disposed on the bonding layer 12. As shown in FIGS. 1F-1G, a first
semiconductor stacked layer 16 is formed on the first current
spreading layer 14, wherein the first semiconductor stacked layer
16 includes a first semiconductor layer 162 disposed on the first
current spreading layer 14; a first active layer 164 disposed on
the first semiconductor layer 162; and a second semiconductor layer
166 disposed on the first active layer 164. A current blocking
layer 13 is disposed on the first semiconductor stacked layer 16,
wherein the current blocking layer 13 is disposed directly above
the electrically conductive region 122; a second current spreading
layer 15 is disposed on the first semiconductor stacked layer 16
and the current blocking layer 13, wherein the second current
spreading layer 15 further covers the current blocking layer 13;
and a first electrode 17 is disposed on the second current
spreading layer 15 wherein the first electrode 17 is disposed
directly above the electrically conductive region 122, and an area
of the top surface 126 of the electrically conductive region 122 is
preferred not being larger than the area of the bottom surface 172
of the first electrode 17.
[0026] The electrically insulative substrate 102 is for supporting
the semiconductor structure thereon, and its material is
electrically insulative with higher band gap such as Sapphire,
Diamond, Glass, Quartz, Acryl, ZnO, or AlN. The first reflective
layer 103 can be material with high reflective index, such as Cu,
Al, In, Sn, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Ni, Cr, Cd, Mn, Sb, Bi,
Ga, Tl, As, Se, Te, Po, Ir, Be, Mg, Ca, Sr, Ba, Zr, Mo, La, Cu--Sn,
Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn, Ni--Co, or Au Alloy
and so on, to reflect light from outside or the first active layer
164. The absorbing layer 105 is for promoting the adhesion and
deposition of electroplating material and can be electrically
conductive materials such as Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti,
Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, Tl, As, Se, Te, Po, Ir,
Re, Rh, Os, W, Li, Na, K, Be, Mg, Ca, Sr, Ba, Zr, Mo, La, Cu--Sn,
Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn, Ni--Co, or Au alloy
and so on. The electrically conductive substrate 106 can support
the electrically insulative substrate 102 and the semiconductor
structure thereon and can promote electrical or thermal conduction.
The material thereof includes Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti,
Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, Tl, As, Se, Te, Po, Ir,
Re, Rh, Os, W, Li, Na, K, Be, Mg, Ca, Sr, Ba, Zr, Mo, La, Cu--Sn,
Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn, Ni--Co, Au alloy,
AuSn, InAg, InAu, AuBe, AuGe, AuZn, PbSn or PdIn. The method for
forming the electrically conductive substrate 106 includes
electroplating. Additionally, the composite substrate 10 further
includes Cu, Al, metal, composite materials, Metal Matrix Composite
(MMC), Ceramic Matrix Composite (CMC), Si, IP, ZnSe, AlN, GaAs,
SiC, GaP, GaAsP, ZnSe, ZnO, InP, LiGaO.sub.2, or LiAlO.sub.2.
[0027] The electrically conductive region 122 can be material with
electrical conductivity and adhesive characteristic such as In, Sn,
Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, Ni, AuSn, InAg, InAu, AuBe,
AuGe, Zn, PbSn, or PdIn, for conducting current and attaching the
composite substrate 10 to the semiconductor structure thereon. The
material of the electrically insulative region 124 has higher band
gap and is electrically insulative and adhesive, such as dielectric
material, Su8, BCB, PFCB, Epoxy, Acrylic Resin, COC, PMMA, PET, PC,
Polyetherimide, Fluorocarbon Polymer, Silicone, Glass,
Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, SiN.sub.X, SOG, Tetraethyl
Orthosilane (TEOS), or other organic adhesive materials for
changing the current path of the photoelectronic element and
attaching the composite substrate 10 to the semiconductor structure
thereon. The materials of the first current spreading layer 14 and
the second spreading layer 15 have low lateral resistance so as to
spread the current more easily in lateral direction, wherein the
materials thereof can be ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO,
AlGaAs, GaN, GaP, GaAs, GaAsP, In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb,
Pd, Ge, Cu, Ni, InAg, InAu, AuBe, AuGe, AuZn, PbSn, PdIn, or AuSn,
wherein the structure thereof includes a single layer or a
stacked-layers structure. The first active layer 164 on the first
semiconductor layer 162 can absorb or produce light. The polarity
of the first semiconductor layer 162 is different from that of the
second semiconductor layer 166. The material of the first
semiconductor layer 162 and/or the second semiconductor layer 166
includes one or more than one elected from the group consisting of
Ga, Al, In, As, P, N, Zn, Se, Sb, Cd, Te, Hg, S, H, Mg, Sn, B, Pb,
C, and Si. The second semiconductor layer 166 can optionally have a
rough upper surface disposed under the second current spreading
layer 15. The current blocking layer 13 can be material with high
resistance such as dielectric material, Su8, BCB, PFCB, Epoxy,
Acrylic Resin, COC, PMMA, PET, PC, Polyetherimide, Fluorocarbon
Polymer, Silicone, Glass, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2,
SiNX, SOG, Tetraethyl Orthosilane (TEOS), or other organic adhesive
materials for changing current path of the photoelectronic element.
The first electrode 17 can be metal, such as Cu, Al, In, Sn, Au,
Pt, Zn, Ag, Ti, Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, Tl, As,
Se, Te, Po, Ir, Re, Rh, Os, W, Li, Na, K, Be, Mg, Ca, Sr, Ba, Zr,
Mo, La, Cu--Sn, Cu--Zn, Cu--Cd, Sn--Pb--Sb, Sn--Pb--Zn, Ni--Sn,
Ni--Co, or Au alloy, and so on for receiving outer voltage.
[0028] As shown in FIG. 1G, the first electrode 17 and the current
blocking layer 13 are both disposed on the electrically conductive
region 122, and preferably directly above the electrically
conductive region 122, wherein the area of the top surface 132 of
the current blocking layer 13 is preferably not smaller than that
of the bottom surface 172 of the first electrode 17 or the top
surface 126 of the electrically conductive region 122. The
electrically conductive substrate 106 includes a contact surface
107 directly in contact with the electrically conductive region
122, wherein the patterned structure of the contact surface 107,
the current blocking layer 13, the electrically conductive region
122, and the first electrode 17 can have the same or different
patterns. The electrically conductive region 122 can be a single
electrically conductive region, such as a single region formed by
electrically conductive material in the bonding layer 12, wherein
the region is below or directly under the first electrode 17 and is
directly in contact with the contact surface 107.
[0029] The electrically conductive substrate 106 is a material with
high thermal conductivity so as to increase the thermal conduction
rate of the photoelectronic element, therefore promoting the
reliability and the light-emitting efficiency of the
photoelectronic element. Besides, by electrically connecting the
electrically conductive region 122 to the electrically conductive
substrate 106, the current of the photoelectronic element can
spread vertically; combining with the electrically insulative
region 124 with high band gap and the electrically insulative
substrate 102, the light absorption by the electrically conductive
substrate 106 is avoided. The current blocking layer 13 is below or
directly under the first electrode 17, so the current flows to
regions not covered by the current blocking layer 13 to avoid the
region of the first semiconductor stacked layer 16 under the first
electrode 17 producing light. The light-absorbing probability of
the first electrode 17 is therefore decreased.
[0030] FIG. 2A illustrates a cross-sectional view in accordance
with a second embodiment. The second embodiment is similar to the
first embodiment and includes a composite substrate 20 including an
electrically insulative substrate 202, an intermediate layer 204
and an electrically conductive substrate 206; a bonding layer 22
including an electrically conductive region 222 and an electrically
insulative region 224; a first current spreading layer 24; a first
semiconductor stacked layer 26 including a first semiconductor
layer 262, a first active layer 264, and a second semiconductor
layer 266; a current blocking layer 23; a second current spreading
layer 25; and a first electrode 27. The difference between the
second embodiment and the first embodiment is that the second
embodiment further includes a window layer 21 disposed between the
first semiconductor stacked layer 26 and the first current
spreading layer 24. The refractive index of the window layer 21 is
different from that of the first semiconductor stacked layer 26 so
as to cause light to be scattered, therefore raising light-emitting
efficiency of the photoelectronic element. The material of the
window layer 21 can be ITO, NO, SnO, CTO, ATO, AZO, ZTO, ZnO,
AlGaAs, GaN, GaP, GaAs, or GaAsP. Besides, the window layer 21 can
optionally have a rough bottom surface on the interface between the
window layer 21 and the first current spreading layer 24. FIG. 2B
illustrates a cross-sectional view in accordance with a third
embodiment, the third embodiment is similar to the second
embodiment, and the difference therebetween is that the current
blocking layer 23 is disposed between the first current spreading
layer 24 and the window layer 21, wherein the blocking layer 23 is
further covered by the window layer 21. The electrically conductive
substrate 206 includes a contact surface 207, wherein the patterned
structure of the contact surface 207, the current blocking layer
23, the electrically conductive region 222, and the first electrode
27 can have the same or different patterns.
[0031] As shown in FIG. 3, a forth embodiment is similar to the
second embodiment and includes a composite substrate 30 including
an electrically insulative substrate 302, an intermediate layer
304, and an electrically conductive substrate 306; a bonding layer
32 including an electrically conductive region 322 and an
electrically insulative region 324; a first current spreading layer
34; a first semiconductor stacked layer 36 including a first
semiconductor layer 362, a first active layer 364, and a second
semiconductor layer 366; a second current spreading layer 35; and a
first electrode 37. The difference between the forth embodiment and
the second embodiment is that there is no current blocking layer in
the forth embodiment, and the first active layer 364 includes a
high band gap region 368 being a high resistance region for
changing circuit path within the photoelectronic element. The high
band gap region 368 is below or directly under the first electrode
37 to make the current flows to the regions other than the high
band gap region 368, so no light is produced in the high band gap
region 368, and the probability of the light-absorbing of the first
electrode 37 can be reduced. The electrically conductive substrate
306 includes a contact surface 307 directly in contact with the
electrically conductive region 322, wherein the patterned structure
of the contact surface 307, the electrically conductive region 322,
the high band gap region 368, and the first electrode 37 can have
the same or different patterns.
[0032] The method for forming the high band gap region 368 includes
heating a specific region in the first active layer 364 via laser
to change the composition thereof, therefore the high band gap
region 368 can be formed, or using laser to heat the second
semiconductor layer 366, so that the heat is conducted to the
specific region of the first active layer 364 to change the
composition thereof. The high band gap region 368 is below or
directly under the first electrode 37.
[0033] Refer to FIG. 4, a fifth embodiment is similar to the forth
embodiment and includes a composite substrate 40 including an
electrically insulative substrate 402, an intermediate layer 404,
and an electrically conductive substrate 406; a bonding layer 42
including an electrically conductive region 422, and an
electrically insulative region 424; a first current spreading layer
44; a first semiconductor stacked layer 46 including a first
semiconductor layer 462, a first active layer 464, and a second
semiconductor layer 466; a second current spreading layer 45; and a
first electrode 47. The difference is that the fifth embodiment
dose not have the high bad gap region and further includes a second
reflective layer 43 disposed between the composite substrate 40 and
the bonding layer 42; a second semiconductor stacked layer 49
including a second active layer (not shown) disposed between the
second reflective layer 43 and the bonding layer 42, and a third
current spreading layer 48 disposing between the second
semiconductor stacked layer 49 and the bonding layer 42. The
electrically conductive substrate 406 includes a contact surface
407 directly in contact with the second reflective layer 43,
wherein the patterned structure of the contact surface 407, the
electrically conductive region 422, and the first electrode 47 can
have the same or different patterns.
[0034] The material of the second reflective layer 43 has high
reflective index and can be Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti, Pb,
Pd, Ge, Ni, Cr, Cd, Mn, Sb, Bi, Ga, Tl, As, Se, Te, Po, Ir, Be, Mg,
Ca, Sr, Ba, Zr, Mo, La, Cu--Sn, Cu--Zn, Cu--Cd, Sn--Pb--Sb,
Sn--Pb--Zn, Ni--Sn, Ni--Co, or Au Alloy and so on to reflect light
from outside or the first active layer 464. The second
semiconductor stacked layer 49 can produce or absorb light, and
optionally has a rough top surface. The material of the second
semiconductor stacked layer 49 contains one or more than one
elements like Ga, Al, In, As, P, N, Zn, cd, Se, Sb, Cd, Te, Hg, S,
H, Mg, Sn, B, Pb, C, and Si. The material of the third current
spreading layer 48 has low lateral resistance to make the current
be spread more easily in lateral direction, wherein the materials
thereof can be ITO, MO, SnO, CTO, ATO, AZO, ZTO, ZnO, AlGaAs, GaN,
GaP), GaAs, GaAsP, In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu,
Ni, InAg, InAu, AuBe, AuGe, AuZn, PbSn, PdIn, or AuSn, and the
structure thereof can be a single layer or stacked layers
structure. The first semiconductor stacked layer 46 and the second
semiconductor stacked layer 49 can also absorb light, so the
structures thereof can be applied to light sensor or solar cell
battery.
[0035] As shown in FIG. 5, a sixth embodiment is similar to the
second embodiment and includes a composite substrate 50 including
an electrically insulative substrate 502, an intermediate layer
504, and an electrically conductive substrate 506; an bonding layer
52 including an electrically conductive region 522, and an
electrically insulative region 524; a first current spreading layer
54; a window layer 51, a first semiconductor stacked layer 56
including a first semiconductor layer 562, a first active layer
564, and a second semiconductor layer 566; a second current
spreading layer 55; and a first electrode 57. The differences
between the sixth embodiment and other embodiments is that the
sixth embodiment further includes a second electrode 58 disposed on
the first semiconductor layer 562 and connected to the first
current spreading layer 54 via a hole 59 thereunder, and the
electrically conductive region 522 is not electrically connected to
the substrate 506. The first electrode 57 and the second electrode
58 are both disposed on the same side of the composite substrate
50, so a horizontal type photoelectronic element is formed
accordingly. Besides, the patterned structure of the electrically
conductive region 522, the current blocking layer 53, and the first
electrode 57 can have the same or different patterns. As shown in
FIG. 5B, a seventh embodiment is similar to the sixth embodiment,
and the difference is that the current blocking layer 53 is
disposed between the first current spreading layer 54 and the
window layer 51 and further covered by the window layer 51. As
shown in FIG. 5C, an eighth embodiment is similar to the sixth
embodiment, and the difference is that the photoelectronic element
dose not have the current blocking layer 53, and the first active
layer 564 further includes a high band gap region 568 below or
directly under the first electrode 57. The patterned structure of
the electrically conductive region 522, the high band gap region
568, and the first electrode 57 can have the same or different
patterns. Each foregoing pattern structure can be a continuous
pattern, such as a circle with at least a protruded section.
[0036] FIG. 6 illustrates a schematic diagram of a light-generating
device. A light-generating device 6 includes a chip diced from a
wafer of the photoelectronic structure of any one of the
embodiments of the present application. The light-generating device
6 can be an illuminating device, such as a street light, a lamp of
vehicle, or an illustrating source for interior. The
light-generating device 6 can be also a traffic sign, or a
backlight of a backlight module of an LCD. The light-generating
device 6 includes a light source 61 composed by forgoing
photoelectronic elements; a power supplying system 62 for applying
current to the light source 61; and a control element 63 for
controlling the power supplying system 62.
[0037] FIG. 7 illustrates a cross-sectional schematic diagram of a
back light device. A back light module 7 includes the
light-generating device 6 of the forgoing embodiments and an
optical element 71. The optical element 71 can process the light
generated by the light-generating device 6 when applying to an LCD,
such as scattering the light emitted from the light-generating
device 6.
[0038] Although the present application has been explained above,
it is not the limitation of the range, the sequence in practice,
the material in practice, or the method in practice. Any
modification or decoration for present application is not detached
from the spirit and the range of such.
* * * * *