U.S. patent application number 12/629847 was filed with the patent office on 2010-08-05 for solar cell module and method of manufacturing the same.
Invention is credited to Seung-Jae Jung, Ku-Hyun KANG, Yeon-Il Kang, Dong-Jin Kim, Byoung-Kyu Lee, Czang-Ho Lee, Yuk-Hyun Nam, Joong-Hyun Park, Myung-Hun Shin, Dae-Ha Woo.
Application Number | 20100193006 12/629847 |
Document ID | / |
Family ID | 42233566 |
Filed Date | 2010-08-05 |
United States Patent
Application |
20100193006 |
Kind Code |
A1 |
KANG; Ku-Hyun ; et
al. |
August 5, 2010 |
SOLAR CELL MODULE AND METHOD OF MANUFACTURING THE SAME
Abstract
A solar cell module includes a substrate, a lower electrode
layer, a semiconductor layer and an upper electrode layer for an
embodiment. The lower electrode layer may include a plurality of
area-separating grooves separating the substrate into an active
area and a peripheral area surrounding the active area, and a
plurality of first cell-separating grooves formed in the active
area. The semiconductor layer is formed on the lower electrode
layer. The semiconductor layer includes a plurality of second
cell-separating grooves that are spaced apart from the first
cell-separating grooves. The upper electrode layer is formed on the
semiconductor layer. The upper electrode layer includes a plurality
of third cell-separating grooves that are spaced apart from the
second separating grooves.
Inventors: |
KANG; Ku-Hyun; (Gyeonggi-do,
KR) ; Kim; Dong-Jin; (Seoul, KR) ; Kang;
Yeon-Il; (Gyeonggi-do, KR) ; Lee; Czang-Ho;
(Gyeonggi-do, KR) ; Shin; Myung-Hun; (Gyeonggi-do,
KR) ; Woo; Dae-Ha; (Chungcheongnam-do, KR) ;
Lee; Byoung-Kyu; (Gyeonggi-do, KR) ; Nam;
Yuk-Hyun; (Gyeonggi-do, KR) ; Jung; Seung-Jae;
(Seoul, KR) ; Park; Joong-Hyun; (Gyeonggi-do,
KR) |
Correspondence
Address: |
Innovation Counsel LLP
21771 Stevens Creek Blvd, Ste. 200A
Cupertino
CA
95014
US
|
Family ID: |
42233566 |
Appl. No.: |
12/629847 |
Filed: |
December 2, 2009 |
Current U.S.
Class: |
136/244 ;
257/E21.158; 438/73 |
Current CPC
Class: |
H01L 31/0463 20141201;
H01L 31/1804 20130101; Y02P 70/50 20151101; H01L 31/046 20141201;
Y02E 10/547 20130101 |
Class at
Publication: |
136/244 ; 438/73;
257/E21.158 |
International
Class: |
H01L 31/042 20060101
H01L031/042; H01L 21/28 20060101 H01L021/28 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 30, 2009 |
KR |
2009-0007218 |
Claims
1. A solar cell module comprising: a substrate; a lower electrode
layer having a plurality of area-separating grooves formed thereon,
which separates the substrate into an active area and a peripheral
area surrounding the active area, and a plurality of first
cell-separating grooves formed in the active area; a semiconductor
layer formed on the lower electrode layer, the semiconductor layer
having a plurality of second cell-separating grooves formed
thereon, which are spaced apart from the first cell-separating
grooves; and an upper electrode layer formed on the semiconductor
layer, the upper electrode layer having a plurality of third
cell-separating grooves formed thereon, which are spaced apart from
the second separating grooves.
2. The solar cell module of claim 1, further comprising: a
plurality of first dummy cells formed in the peripheral area to be
spaced apart from the area-separating grooves, wherein each of the
first dummy cells has the lower electrode layer, the semiconductor
layer and the upper electrode layer.
3. The solar cell module of claim 2, further comprising: a
plurality of second dummy cells formed in the peripheral area to be
spaced apart from the first dummy cells, wherein each of the second
dummy cells has the lower electrode layer.
4. The solar cell module claim 2, further comprising: a plurality
of second dummy cells formed in the peripheral area to be spaced
apart from the first dummy cells, wherein each of the second dummy
cells has the lower electrode layer, the semiconductor layer and
the upper electrode layer.
5. The solar cell module of claim 4, wherein the lower electrode
layer of the second dummy cells contacts an end portion of the
area-separating grooves, and the semiconductor layer and the upper
electrode layer of the second dummy cells are spaced apart from the
semiconductor layer and the upper electrode layer that are
deposited in the active area.
6. A solar cell module comprising: a substrate; a lower electrode
layer having a plurality of area-separating grooves formed thereon,
which separates the substrate into an active area and a peripheral
area surrounding the active area, a plurality of first
cell-separating grooves formed in the active area, and a plurality
of first peripheral grooves formed in the peripheral area; a
semiconductor layer having a plurality of second cell-separating
grooves formed thereon, which are spaced apart from the first
cell-separating grooves, and a plurality of second peripheral
grooves formed in the peripheral area to be connected to the first
peripheral grooves; and an upper electrode layer having a plurality
of third cell-separating grooves formed thereon, which are spaced
apart from the second separating grooves, and a plurality of third
peripheral grooves formed in the peripheral area to be connected to
the second peripheral grooves.
7. The solar cell module of claim 6, further comprising: a
plurality of first dummy cells formed in the peripheral area to be
spaced apart from the first to third peripheral grooves, wherein
each of the first dummy cells has the lower electrode layer, the
semiconductor layer and the upper electrode layer.
8. The solar cell module of claim 7, further comprising: a
plurality of second dummy cells disposed in the peripheral area to
face the first dummy cells by interposing the first to third
peripheral grooves, wherein the second dummy cells comprises the
lower electrode layer.
9. The solar cell module of claim 7, further comprising: a
plurality of second dummy cells disposed in the peripheral area to
face the first dummy cells by interposing the first to third
peripheral grooves, wherein the second dummy cells comprises the
lower electrode layer, the semiconductor layer and the upper
electrode layer.
10. The solar cell module of claim 9, wherein the semiconductor
layer further comprises a plurality of fourth peripheral grooves
formed thereon, which are spaced apart from the second peripheral
grooves in the peripheral area, and the upper electrode layer
further comprises a plurality of fifth peripheral grooves formed in
the peripheral area to be connected to the fourth peripheral
grooves.
11. A method of manufacturing a solar cell module, the method
comprising: forming a lower electrode layer on a substrate, which
has a plurality of area-separating grooves formed thereon and a
plurality of first cell-separating grooves formed thereon; forming
a semiconductor layer on the lower electrode layer, which has a
plurality of second cell-separating grooves spaced apart from the
first cell-separating grooves; and forming an upper electrode layer
on the semiconductor layer, which has a plurality of third
cell-separating grooves spaced apart from the second separating
grooves.
12. The method of claim 11, wherein forming the lower electrode
layer comprises: forming the lower electrode layer on the
substrate; and forming the area-separating grooves and the first
cell-separating grooves by irradiating a first laser beam onto the
substrate on which the lower electrode layer is formed, the
area-separating grooves separating the substrate into an active
area and a peripheral area surrounding the active area.
13. The method of claim 12, wherein forming the semiconductor layer
comprises: forming the semiconductor layer on the lower electrode
layer having the first cell-separating grooves formed thereon; and
forming the second cell-separating grooves exposing the lower
electrode layer by irradiating a second laser beam onto an area
that is different from an area where the first cell-separating
grooves are formed on the semiconductor layer formed in the active
area.
14. The method of claim 13, wherein forming an upper electrode
layer comprises: forming the upper electrode layer on the
semiconductor layer having the second cell-separating grooves
formed thereon; and forming the third cell-separating grooves
exposing the lower electrode layer by irradiating a third laser
beam onto an area that is different from an area where the second
cell-separating grooves are formed on the upper electrode layer
formed in the active area.
15. The method of claim 14, further comprising: forming a plurality
of first dummy cells spaced apart from the area-separating grooves
in the peripheral area, the first dummy cells comprising the lower
electrode layer, the semiconductor layer and the upper electrode
layer.
16. The method of claim 15, wherein forming the first dummy cells
comprises: forming first peripheral separating grooves in the
peripheral area by irradiating a fourth laser beam onto the
peripheral area to remove a portion of the lower electrode layer, a
portion of the semiconductor layer and a portion of the upper
electrode layer that are formed in the peripheral area, and the
first dummy cells are spaced apart from the area-separating grooves
by the first peripheral grooves.
17. The method of claim 15, further comprising: forming a plurality
of second dummy cells spaced apart from the first dummy cells in
the peripheral area, wherein the second dummy cells comprise the
lower electrode layer.
18. The method of claim 17, wherein forming the second dummy cells
comprises: forming second peripheral separating grooves in the
peripheral area by irradiating a fifth laser beam onto the
peripheral area to remove the upper electrode layer and the
semiconductor layer formed in the peripheral area, and the second
dummy cells are formed by the second peripheral separating
grooves.
19. The method of claim 15, further comprising: forming a plurality
of second dummy cells spaced apart from the first dummy cells in
the peripheral area, the second dummy cells comprising the lower
electrode layer, the semiconductor layer and the upper electrode
layer.
20. The method of claim 19, wherein forming the second dummy cells
comprises: forming second peripheral separating grooves by
irradiating a fifth laser beam onto the peripheral area to remove a
portion of the upper electrode layer and a portion of the
semiconductor layer that are formed in the peripheral area, and the
semiconductor layer and the upper electrode layer of the second
dummy cells are electrically isolated from the semiconductor layer
and the upper electrode layer of a photoelectric conversion cell
formed in a peripheral area of the active area by the second
peripheral separating grooves.
21. The method of claim 15, further comprising: removing the lower
electrode layer, the semiconductor layer and the upper electrode
layer formed in the peripheral area by irradiating a fourth laser
beam onto the peripheral area spaced apart from the area-separating
grooves.
Description
PRIORITY STATEMENT
[0001] This application claims priority under 35 U.S.C. .sctn.119
to Korean Patent Application No. 2009-7218, filed on Jan. 30, 2009
in the Korean Intellectual Property Office (KIPO), the contents of
which are herein incorporated by reference in their entirety.
BACKGROUND
[0002] 1. Technical Field
[0003] Example embodiments of the present invention generally
relate to a solar cell module and a method of manufacturing the
solar cell module. More particularly, example embodiments of the
present invention relate to a solar cell module which converts
light energy into electric energy and a method of manufacturing the
solar cell module.
[0004] 2. Description of the Related Art
[0005] Generally, a solar cell is a device which converts light
energy into electric energy by using a photovoltaic effect. The
solar cell is classified as a silicon solar cell, a thin-film solar
cell, a dye-sensitized solar cell, an organic polymer solar cell,
etc., in accordance with structural materials.
[0006] A solar cell module includes a plurality of photoelectric
conversion cells. A lower electrode layer, a semiconductor layer
and an upper electrode layer are formed on a transparent substrate,
and a portion of each layer is removed to form the photoelectric
conversion cells. The lower electrode layer, the semiconductor
layer and the upper electrode layer are formed in an area having
the photoelectric conversion cells as well as an area not having
the photoelectric conversion cells.
[0007] When the lower electrode layer, the semiconductor layer and
the upper electrode layer are formed on the entire surface of the
substrate, the lower electrode layer and the upper electrode layer
may be electrically connected to each other at an edge portion of
the substrate. When the lower electrode layer and the upper
electrode layer are electrically connected to each other, the light
energy conversion efficiency of the solar cell may be reduced.
Accordingly, a process is needed in which a deposited material is
removed at an edge portion of the substrate to electrically
separate the lower electrode layer from the upper electrode
layer.
SUMMARY
[0008] Example embodiments of the present invention provide a solar
cell module capable of improving light energy efficiency so that a
lower electrode and an upper electrode of photoelectric conversion
cells are prevented from being electrically connected to each
other.
[0009] Example embodiments of the present invention also provide a
method of manufacturing the solar cell module.
[0010] According to one embodiment of the present invention, a
solar cell module includes a substrate, a lower electrode layer, a
semiconductor layer and an upper electrode layer. The lower
electrode layer includes a plurality of area-separating grooves
formed thereon, which separates the substrate into an active area
and a peripheral area surrounding the active area, and a plurality
of first cell-separating grooves formed in the active area. The
semiconductor layer is formed on the lower electrode layer. The
semiconductor layer includes a plurality of second cell-separating
grooves formed thereon, which are spaced apart from the first
cell-separating grooves. The upper electrode layer is formed on the
semiconductor layer. The upper electrode layer includes a plurality
of third cell-separating grooves formed thereon, which are spaced
apart from the second separating grooves.
[0011] In an example embodiment of the present invention, the solar
cell module may further include a plurality of first dummy cells
formed in the peripheral area to be spaced apart from the
area-separating grooves, and each of the first dummy cells has the
lower electrode layer, the semiconductor layer and the upper
electrode layer.
[0012] In an example embodiment of the present invention, the solar
cell module may further include a plurality of second dummy cells
formed in the peripheral area that are spaced apart from the first
dummy cells, the second dummy cells having the lower electrode
layer.
[0013] In an example embodiment of the present invention, the solar
cell module may further include a plurality of second dummy cells
formed in the peripheral area to be spaced apart from the first
dummy cells, and each of the second dummy cells has the lower
electrode layer, the semiconductor layer and the upper electrode
layer.
[0014] In an example embodiment of the present invention, the lower
electrode layer of the second dummy cells may contact with an end
portion of the area-separating grooves, and the semiconductor layer
and the upper electrode layer of the second dummy cells may be
spaced apart from the semiconductor layer and the upper electrode
layer that are deposited in the active area.
[0015] According to another embodiment of the present invention, a
solar cell module includes a substrate, a lower electrode layer, a
semiconductor layer and an upper electrode layer. The lower
electrode layer includes a plurality of area-separating grooves
formed thereon, which separates the substrate into an active area
and a peripheral area surrounding the active area, a plurality of
first cell-separating grooves formed in the active area, and a
plurality of first peripheral grooves formed in the peripheral
area. The semiconductor layer has a plurality of second
cell-separating grooves formed thereon, which are spaced apart from
the first cell-separating grooves, and a plurality of second
peripheral grooves formed on the peripheral area to be connected to
the first peripheral grooves. The upper electrode layer has a
plurality of third cell-separating grooves formed thereon, which
are spaced apart from the second separating grooves, and a
plurality of third peripheral grooves formed on the peripheral area
to be connected to the second peripheral grooves.
[0016] In an example embodiment of the present invention, the solar
cell module may further include a plurality of first dummy cells
formed in the peripheral area to be spaced apart from the first to
third peripheral grooves, and each of the first dummy cells has the
lower electrode layer, the semiconductor layer and the upper
electrode layer.
[0017] In an example embodiment of the present invention, the solar
cell module may further include a plurality of second dummy cells
disposed in the peripheral area to face the first dummy cells by
interposing the first to third peripheral grooves, and the second
dummy cells have the lower electrode layer.
[0018] In an example embodiment of the present invention, the solar
cell module may further include a plurality of second dummy cells
disposed in the peripheral area to face the first dummy cells by
interposing the first to third peripheral grooves, and the second
dummy cells have the lower electrode layer, the semiconductor layer
and the upper electrode layer.
[0019] In an example embodiment of the present invention, the
semiconductor layer may further include a plurality of fourth
peripheral grooves formed thereon, which are spaced apart from the
second peripheral grooves in the peripheral area. The upper
electrode layer may further include a plurality of fifth peripheral
grooves formed in the peripheral area to be connected to the fourth
peripheral grooves.
[0020] According to still another embodiment of the present
invention, in a method of manufacturing a solar cell module, a
lower electrode layer is formed on a substrate. The lower electrode
layer has a plurality of area-separating grooves formed thereon and
a plurality of first cell-separating grooves formed thereon. A
semiconductor layer is formed on the lower electrode layer. The
semiconductor layer has a plurality of second cell-separating
grooves spaced apart from the first cell-separating grooves. An
upper electrode layer is formed on the semiconductor layer. The
upper electrode layer has a plurality of third cell-separating
grooves spaced apart from the second separating grooves.
[0021] In an example embodiment of the present invention, forming
the lower electrode layer may include forming the lower electrode
layer on the substrate, and forming the area-separating grooves and
the first cell-separating grooves by irradiating a first laser beam
onto the substrate on which the lower electrode layer is formed.
The area-separating grooves may separate the substrate into an
active area and a peripheral area surrounding the active area.
[0022] In an example embodiment of the present invention, forming
the semiconductor layer may include forming the semiconductor layer
on the lower electrode layer having the first cell-separating
grooves formed thereon, and forming the second cell-separating
grooves exposing the lower electrode layer by irradiating a second
laser beam onto a different area that is different from an area
where the first cell-separating grooves are formed on the
semiconductor layer formed in the active area.
[0023] In an example embodiment of the present invention, forming
an upper electrode layer may include forming the upper electrode
layer on the semiconductor layer having the second cell-separating
grooves formed thereon, and forming the third cell-separating
grooves exposing the lower electrode layer by irradiating a third
laser beam onto a different area that is different from an area
where the second cell-separating grooves are formed on the upper
electrode layer formed in the active area.
[0024] In an example embodiment of the present invention, forming a
plurality of first dummy cells may further include the first dummy
cells being spaced apart from the area-separating grooves in the
peripheral area. The first dummy cells may include the lower
electrode layer, the semiconductor layer and the upper electrode
layer.
[0025] In an example embodiment of the present invention, forming
the first dummy cells may include forming first peripheral
separating grooves in the peripheral area by irradiating a fourth
laser beam onto the peripheral area to remove a portion of the
lower electrode layer, a portion of the semiconductor layer and a
portion of the upper electrode layer that are formed in the
peripheral area. The first dummy cells may be spaced apart from the
area-separating grooves by the first peripheral grooves.
[0026] In an example embodiment of the present invention, forming a
plurality of second dummy cells may further include the second
dummy cells being spaced apart from the first dummy cells in the
peripheral area, and the second dummy cells may include the lower
electrode layer.
[0027] In an example embodiment of the present invention, forming
the second dummy cells may include forming second peripheral
separating grooves in the peripheral area by irradiating a fifth
laser beam onto the peripheral area to remove the upper electrode
layer and the semiconductor layer formed in the peripheral area.
The second dummy cells may be formed by the second peripheral
separating grooves.
[0028] In an example embodiment of the present invention, forming a
plurality of second dummy cells may further include the second
dummy cells being spaced apart from the first dummy cells in the
peripheral area, the second dummy cells having the lower electrode
layer, the semiconductor layer and the upper electrode layer.
[0029] In an example embodiment of the present invention, forming
the second dummy cells may include forming second peripheral
separating grooves by irradiating a fifth laser beam onto the
peripheral area to remove a portion of the upper electrode layer
and a portion of the semiconductor layer that are formed in the
peripheral area. The semiconductor layer and the upper electrode
layer of the second dummy cells may be electrically isolated from
the semiconductor layer and the upper electrode layer of
photoelectric conversion cell formed in a peripheral area of the
active area by the second peripheral separating grooves.
[0030] In an example embodiment of the present invention, the
method of manufacturing the solar cell may further include removing
the lower electrode layer, the semiconductor layer and the upper
electrode layer formed in the peripheral area by irradiating a
fourth laser beam onto the peripheral area spaced apart from the
area-separating grooves.
[0031] According to one or more embodiments of a solar cell module
and a method of manufacturing the solar cell module, a peripheral
separating groove which separates an active area from a peripheral
area are spaced apart from area-separating grooves, so that a
leakage current generated in the peripheral area may be prevented
from being transmitted to the active area. Therefore, a leakage
current generated in the peripheral area may affect photoelectric
conversion cells formed in the active area, so that the light
energy conversion efficiency of the solar cell may be prevented
from being reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0032] The above and other features and advantages of the present
disclosure will become more apparent by describing in detail
example embodiments thereof with reference to the accompanying
drawings, in which:
[0033] FIG. 1 is a plan view illustrating a solar cell module
according to an example embodiment of the present invention;
[0034] FIG. 2 is a cross-sectional view taken along a line IT in
FIG. 1 according to an embodiment;
[0035] FIG. 3 is an enlarged plan view illustrating a portion "A"
of FIG. 1 according to an embodiment;
[0036] FIGS. 4A to 4C are cross-sectional views illustrating a
process for manufacturing the solar cell module of FIG. 2 according
to one or more embodiments;
[0037] FIG. 5 is a plan view illustrating a solar cell module
according to another example embodiment of the present
invention;
[0038] FIG. 6 is a cross-sectional view taken along a line II-II'
in FIG. 5 according to an embodiment;
[0039] FIG. 7 is an enlarged plan view illustrating a portion "A"
of FIG. 5 according to an embodiment;
[0040] FIG. 8 is a plan view illustrating a solar cell module
according to still another example embodiment of the present
invention;
[0041] FIG. 9 is a cross-sectional view taken along a line III-III'
in FIG. 8 according to an embodiment;
[0042] FIG. 10 is an enlarged plan view illustrating a portion "A"
of FIG. 8 according to an embodiment;
[0043] FIG. 11 is a plan view illustrating a solar cell module
according to still another example embodiment of the present
invention;
[0044] FIG. 12 is a cross-sectional view taken along a line IV-V'
in FIG. 11 according to an embodiment; and
[0045] FIG. 13 is a graph showing voltage-current characteristics
of each of an example sample and a comparative sample according to
one or more embodiments.
DETAILED DESCRIPTION
[0046] The present disclosure is described more fully hereinafter
with reference to the accompanying drawings, in which example
embodiments of the present invention are shown. The present
disclosure may, however, be embodied in many different forms and
should not be construed as limited to the example embodiments set
forth herein. Rather, these example embodiments are provided so
that this disclosure will be thorough and complete, and will fully
convey the scope of the present disclosure to those skilled in the
art. In the drawings, the sizes and relative sizes of layers and
regions may be exaggerated for clarity.
[0047] It will be understood that when an element or layer is
referred to as being "on," "connected to" or "coupled to" another
element or layer, it can be directly on, connected or coupled to
the other element or layer, or intervening elements or layers may
be present. In contrast, when an element is referred to as being
"directly on," "directly connected to" or "directly coupled to"
another element or layer, there are no intervening elements or
layers present. Like numerals refer to like elements throughout. As
used herein, the term "and/or" includes any and all combinations of
one or more of the associated listed items.
[0048] It will be understood that, although the terms first,
second, third, etc. may be used herein to describe various
elements, components, regions, layers and/or sections, these
elements, components, regions, layers and/or sections should not be
limited by these terms. These terms are only used to distinguish
one element, component, region, layer or section from another
element, component, region, layer or section. Thus, a first
element, component, region, layer or section discussed below could
be termed a second element, component, region, layer or section
without departing from the teachings of the present disclosure.
[0049] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper" and the like, may be used herein for ease
of description to describe one element or feature's relationship to
another element(s) or feature(s) as illustrated in the figures. It
will be understood that the spatially relative terms are intended
to encompass different orientations of the device in use or
operation in addition to the orientation depicted in the figures.
For example, if the device in the figures is turned over, elements
described as "below" or "beneath" other elements or features would
then be oriented "above" the other elements or features. Thus, the
exemplary term "below" can encompass both an orientation of above
and below. The device may be otherwise oriented (rotated 90 degrees
or at other orientations) and the spatially relative descriptors
used herein interpreted accordingly.
[0050] The terminology used herein is for the purpose of describing
particular example embodiments only and is not intended to be
limiting of the present disclosure. As used herein, the singular
forms "a," "an" and "the" are intended to include the plural forms
as well, unless the context clearly indicates otherwise. It will be
further understood that the terms "comprises" and/or "comprising,"
when used in this specification, specify the presence of stated
features, integers, steps, operations, elements, and/or components,
but do not preclude the presence or addition of one or more other
features, integers, steps, operations, elements, components, and/or
groups thereof
[0051] Example embodiments of the invention are described herein
with reference to cross-sectional illustrations that are schematic
illustrations of idealized example embodiments (and intermediate
structures) of the present invention. As such, variations from the
shapes of the illustrations as a result, for example, of
manufacturing techniques and/or tolerances, are to be expected.
Thus, example embodiments of the present invention should not be
construed as limited to the particular shapes of regions
illustrated herein but are to include deviations in shapes that
result, for example, from manufacturing. For example, an implanted
region illustrated as a rectangle will, typically, have rounded or
curved features and/or a gradient of implant concentration at its
edges rather than a binary change from implanted to non-implanted
region. Likewise, a buried region formed by implantation may result
in some implantation in the region between the buried region and
the surface through which the implantation takes place. Thus, the
regions illustrated in the figures are schematic in nature and
their shapes are not intended to illustrate the actual shape of a
region of a device and are not intended to limit the scope of the
present disclosure.
[0052] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
disclosure belongs. It will be further understood that terms, such
as those defined in commonly used dictionaries, should be
interpreted as having a meaning that is consistent with their
meaning in the context of the relevant art and will not be
interpreted in an idealized or overly formal sense unless expressly
so defined herein.
[0053] Hereinafter, embodiments of the present invention will be
explained in detail with reference to the accompanying
drawings.
[0054] FIG. 1 is a plan view illustrating a solar cell module 100
according to an example embodiment of the present invention. FIG. 2
is a cross-sectional view taken along a line IT in FIG. 1 according
to an embodiment.
[0055] Referring to FIGS. 1 and 2, a solar cell module 100
according to the present example embodiment includes a transparent
substrate 110, a plurality of photoelectric conversion cells 105
and a plurality of first dummy cells 162.
[0056] The transparent substrate 110 includes an active area AA
having the photoelectric conversion cells 105 and a peripheral area
PA surrounding the active area AA. The active area AA and the
peripheral area PA may be divided by a plurality of area-separating
grooves 101. In the present example embodiment, the transparent
substrate 110 may be a glass substrate.
[0057] The photoelectric conversion cells 105 are formed in the
active area AA. The photoelectric conversion cells 105 may be
extended in a first direction D1, and serially coupled to each
other along a second direction D2 crossing the first direction D1.
In the present example embodiment, the first direction D1 may be
perpendicular to the second direction D2. All of the photoelectric
conversion cells 105 may have the same area. For example, the
photoelectric conversion cells 105 may have a line width of about 1
cm and a length of about 1 m. That is, the photoelectric conversion
cells 105 may have a long bar shape.
[0058] The photoelectric conversion cells 105 include a lower
electrode layer 120, a semiconductor layer 130 and an upper
electrode layer 140 that are disposed on the transparent substrate
110.
[0059] The lower electrode layer 120 is formed on the transparent
substrate 110. The lower electrode layer 120 may include a material
having light-transmitting properties and electrically conductive
properties. The lower electrode layer 120 may include a transparent
conductive oxide (TCO). For example, the lower electrode layer 120
may include indium tin oxide (ITO), tin oxide (SnO.sub.2), etc. The
lower electrode layer 120 may have a thickness of about 600 .ANG.
to 2 .mu.m.
[0060] The semiconductor layer 130 generates an electromotive force
in response to light transmitted through the transparent substrate
110 and the lower electrode layer 120. An electric-field may be
formed between the lower electrode layer 120 and the upper
electrode layer 140 due to the electromotive force, so that an
electric current may be generated. For example, the semiconductor
layer 130 may be formed by sequentially depositing a p-type silicon
film, and i-type silicon film and an n-type silicon film. In this
case, the semiconductor layer 130 may have a thickness of about
2,000 .ANG. to 4,000 .ANG.. Alternatively, the semiconductor layer
130 may be formed by depositing a p-type silicon film/an i-type
silicon film/an n-type silicon film in a double-layer structure. In
this case, the semiconductor layer 130 may have a thickness of
about 1.5 .mu.m to 2.5 .mu.m.
[0061] The upper electrode layer 140 is disposed on the
semiconductor layer 130. The upper electrode layer 140 may include
a metal. For example, the upper electrode layer 140 may be formed
of indium tin oxide (ITO), tin oxide (SnO.sub.2), etc. The upper
electrode layer 140 may perform the function of a reflective
electrode. The upper electrode layer 140 may have a thickness of
about 2,000 .ANG. to 4,000 .ANG..
[0062] The photoelectric conversion cells 105 are divided by a
cell-separating groove 112. The cell-separating groove 112 includes
a plurality of first cell-separating grooves 112a, a plurality of
second-separating grooves 112b and a plurality of third
cell-separating grooves 112c. The first cell-separating grooves
112a are formed on the lower electrode layer 120. The
second-separating grooves 112b are formed on the semiconductor
layer 130 that are spaced apart from the first cell-separating
grooves 112a. The third cell-separating grooves 112c are formed on
the upper electrode layer 140 that are spaced apart from the second
cell-separating grooves 112b. The third cell-separating grooves
112c expose a portion of the lower electrode layer 120.
[0063] The upper electrode layer 140 of each of the photoelectric
conversion cells 105 may be electrically connected to the lower
electrode layer 120 of an adjacent photoelectric conversion cell
105 through the second cell-separating groove 112b.
[0064] The first dummy cells 162 are formed in the peripheral area
PA to be spaced apart from the photoelectric conversion cells 105.
For example, the first dummy cells 162 contact with an edge portion
of the transparent substrate 110 in the peripheral area PA. The
first dummy cells 162 are spaced apart from the photoelectric
conversion cells 105. The photoelectric conversion cells 105 and
the first dummy cells 162 are electrically and physically separated
from each other by a plurality of first peripheral separating
grooves 152 formed in the peripheral area PA.
[0065] The first dummy cells 162 may include the lower electrode
layer 120, the semiconductor layer 130 and the upper electrode
layer 140.
[0066] The first peripheral separating grooves 152 may be defined
by a first peripheral groove 152a, a second peripheral groove 152b
and a third peripheral groove 152c. The first peripheral groove
152a is formed in the peripheral area PA of the lower electrode
layer 120. The second peripheral groove 152b is connected to the
first peripheral groove 152a in the peripheral area PA. The third
peripheral groove 152c is connected to the second peripheral groove
152b in the peripheral area PA of the upper electrode layer
140.
[0067] The area-separating grooves 101, the first to third
cell-separating grooves 112a, 112b and 112c, and the first
peripheral separating grooves 152 may be formed by using a laser
scribing process in which a portion or all of the layers deposited
on the transparent substrate 110 may be removed by using a laser
beam.
[0068] FIG. 3 is an enlarged plan view illustrating a portion "A"
of FIG. 1 according to an embodiment.
[0069] Referring to FIG. 3, the first peripheral separating groove
152 is formed in the peripheral area PA of a transparent substrate.
The first peripheral separating groove 152 may be spaced apart from
the first area-separating groove 101 in parallel with the first
area-separating groove 101 by a predetermined distance.
[0070] Alternatively, the width of the first peripheral separating
groove 152 may be different from the width of the first
area-separating groove 101. For example, the width of the first
peripheral separating groove 152 may be substantially larger than
that of the first area-separating groove 101.
[0071] FIGS. 4A to 4C are cross-sectional views illustrating a
process for manufacturing the solar cell module of FIG. 2 according
to one or more embodiments.
[0072] Referring to FIGS. 2 and 4A, the lower electrode layer 120
is formed on the transparent substrate 110.
[0073] A first laser beam may be irradiated onto the transparent
substrate 110 having the lower electrode layer 120 to form the
area-separating grooves 101 and the first cell-separating grooves
112a so that the area-separating grooves 101 separate an area of
the transparent substrate 110 into the active area AA and the
peripheral area PA surrounding the active area AA. The first
cell-separating grooves 112a are formed through the lower electrode
layer 120 in the active area AA. The area-separating grooves 101
may be simultaneously formed with the first cell-separating groove
112a. Here, the first laser beam may have a wavelength of about
1,064 nm. The first laser beam may be irradiated in a first
direction D1. Here, the first direction D1 may be a direction from
the lower surface of the transparent substrate 110 to the upper
surface of the transparent substrate 110 where the lower electrode
layer 120 is formed.
[0074] Referring to FIGS. 2 and 4B, the semiconductor layer 130 is
deposited on the transparent substrate 110 having the lower
electrode layer 120. The semiconductor layer 130 may be formed by
depositing a p-type silicon film/an i-type silicon film/an n-type
silicon film in a single-layer structure. Alternatively, the
semiconductor layer 130 may be formed by depositing a p-type
silicon film/an i-type silicon film/an n-type silicon film in a
double-layer structure.
[0075] Then, the second cell-separating grooves 112b spaced apart
from the first cell-separating groove 112a are formed on the
semiconductor layer 130 formed in the active area AA. For example,
the second cell-separating grooves 112b may be formed by
irradiating a second laser beam onto another area that is different
from an area where the first cell-separating grooves 112a are
formed on the semiconductor layer 130 formed in the active area AA.
The second cell-separating grooves 112b expose the lower electrode
layer 120. The second laser beam may have a wavelength of about 532
nm. In this case, the second laser beam is irradiated onto a
position spaced apart from the first cell-separating grooves 112a
by a predetermined distance to not overlap with the first
cell-separating grooves 112a formed on the lower electrode layer
120.
[0076] Referring to FIGS. 2 and 4C, the upper electrode layer 140
is formed on the transparent substrate 110 on which the
semiconductor layer 130 is formed.
[0077] Then, the third cell-separating grooves 112c spaced apart
from the second cell-separating groove 112b are formed on the upper
electrode layer 140 formed in the active area AA. For example, the
third cell-separating grooves 112c may be formed by irradiating a
third laser beam onto another area that is different from an area
where the second cell-separating grooves 112b are formed on the
upper electrode layer 140 formed in the active area AA. The third
cell-separating grooves 112c expose the lower electrode layer 120.
The third laser beam may have a wavelength of about 532 nm.
[0078] Finally, a portion of the lower electrode layer 120, a
portion of the semiconductor layer 130 and a portion of the upper
electrode layer 140 that are formed in the peripheral area PA
spaced apart from the active area AA are removed to form the first
peripheral separating grooves 152. For example, the first
peripheral separating grooves 152 may be formed in the peripheral
area PA spaced apart from the area-separating grooves 101 by
irradiating a fourth laser beam thereto. The fourth laser beam may
have a wavelength of about 1,064 nm.
[0079] According to the present example embodiment, the first
peripheral separating grooves 152 which electrically and physically
separate the active area AA and the peripheral area PA are formed
through one layer process, so that a manufacturing process of a
solar cell module may be simplified. In addition, the first
peripheral separating grooves 152 are formed in an area spaced
apart from the active area AA, so that a leakage current may be
prevented from being transmitted to the active area even if a
leakage current is generated in the peripheral area PA.
[0080] FIG. 5 is a plan view illustrating a solar cell module 200
according to another example embodiment of the present invention.
FIG. 6 is a cross-sectional view taken along a line II-IF in FIG.
5.
[0081] Referring to FIGS. 5 and 6, the solar cell module 200
according to the present example embodiment includes a transparent
substrate 110, a plurality of photoelectric conversion cells 105, a
plurality of first peripheral separating grooves 152, a plurality
of second peripheral separating grooves 154, a plurality of first
dummy cells 162 and a plurality of second dummy cells 164.
[0082] The solar cell module 200 according to the present example
embodiment is substantially the same as the solar cell module 100
described according to one or more embodiments in FIGS. 1 and 3
except that the second dummy cells 164 formed by a plurality of
second peripheral grooves 154a to 154b are included in the solar
cell module 200, and the area-separating grooves 101, the first
peripheral separating grooves 152 and the second peripheral
separating grooves 154 are spaced apart from each other. Thus, the
same reference numerals will be used to refer to the same elements
or like parts as those described in the embodiments of FIGS. 1 and
3, and any further explanation concerning the above elements will
be omitted.
[0083] The transparent substrate 110 may include an active area AA
where the photoelectric conversion cells 105 are formed thereon and
a peripheral area PA where the first and second dummy cells 162 and
164 are formed thereon. The active area AA and the peripheral area
PA may be divided by the area-separating grooves 101.
[0084] The first peripheral separating grooves 152 are spaced apart
from the area-separating grooves 101 in the peripheral area PA. The
first peripheral separating grooves 152 expose a portion of the
transparent substrate 110. The first peripheral separating grooves
152 may be defined by the first peripheral groove 152a formed in
the peripheral area PA of the lower electrode layer 120, the second
peripheral groove 152b connected to the first peripheral groove
152a in the peripheral area PA, and the third peripheral groove
152c connected to the second peripheral groove 152b in the
peripheral area PA of the upper electrode layer 140.
[0085] The second peripheral separating grooves 154 are formed in
the peripheral area PA. The second peripheral separating grooves
154 may be formed on an area that is different from an area where
the first peripheral separating grooves 152 are formed thereon. The
second peripheral separating grooves 154 expose a portion of the
lower electrode layer 120 of the second dummy cells 164. The second
peripheral separating grooves 154 may be positioned between the
first peripheral separating grooves 152 and the area-separating
grooves 101.
[0086] The second peripheral separating grooves 154 may be defined
by a fourth peripheral groove 154a formed in the peripheral area PA
of the semiconductor layer 130 and a fifth peripheral groove 154b
connected to the fourth peripheral groove 154a in the peripheral
area PA of the upper electrode layer 140.
[0087] The first dummy cells 162 are formed in the peripheral area
PA. The first dummy cells 162 include the lower electrode layer
120, the semiconductor layer 130 and the upper electrode layer
140.
[0088] The second dummy cells 164 are spaced apart from the first
dummy cells 162 by a predetermined distance in the peripheral area
PA. The second dummy cells 164 may be formed in an area where a
first side thereof contacts the second peripheral separating
grooves 154, and a second side thereof contacts the first
peripheral separating groove 152. The second dummy cells 164
include the lower electrode layer 120, the semiconductor layer 130
and the upper electrode layer 140. The lower electrode layer 120 of
the second dummy cells 164 is exposed through the second peripheral
separating grooves 154.
[0089] The active area AA and the peripheral area PA are
electrically and physically separated from each other through the
first and second peripheral separating grooves 152 and 154.
[0090] The first dummy cells 162 and the second dummy cells 164 are
electrically and physically separated from each other through the
first peripheral separating grooves 152.
[0091] FIG. 7 is an enlarged plan view illustrating a portion "A"
of FIG. 5 according to an embodiment.
[0092] Referring to FIGS. 5 and 7, the first peripheral separating
grooves 152 and the second peripheral separating grooves 154 are
formed in the peripheral area PA of the transparent substrate 110.
The second peripheral separating grooves 154 may be spaced apart
from the area-separating grooves 101 by a predetermined distance in
parallel with the area-separating grooves 101. The first peripheral
separating grooves 152 are spaced apart from the second peripheral
separating grooves 154 by a predetermined distance.
[0093] A method of manufacturing the solar cell module 200
according to the present example embodiment is substantially the
same as the method of manufacturing the solar cell module 100
described according to one or more embodiments in FIGS. 4A to 4C
except for further including a process of forming the second
peripheral separating grooves 154. Thus, the same reference
numerals will be used to refer to the same elements or like parts
as those described in the embodiments of FIGS. 4A to 4C and any
further explanation concerning the above elements will be
omitted.
[0094] The lower electrode layer 120, the semiconductor layer 130
and the upper electrode layer 140 are formed on the transparent
substrate 110, and the first to third cell-separating grooves 112a
to 112c formed in the active area AA may be formed through a laser
process. Then, the first peripheral separating grooves 152 exposing
a portion of the transparent substrate 110 may be formed by
irradiating a fourth laser beam onto the peripheral area PA. The
fourth laser beam may have a wavelength of about 1,064 nm.
[0095] Then, a fifth laser beam may be irradiated onto an area that
is different from an area where the first peripheral separating
grooves 152 are formed in the peripheral area PA to form the second
peripheral separating grooves 154 exposing a portion of the lower
electrode layer 120 formed in the peripheral area PA. The fifth
laser beam may have a wavelength of about 532 nm.
[0096] According to the present example embodiment, the first
peripheral separating grooves 152 and the second peripheral
separating grooves 154 which electrically and physically separate
the active area AA and the peripheral area PA are formed in an area
spaced apart from the active area AA, so that a leakage current may
be prevented from being transmitted to the active area even if a
leakage current is generated in the peripheral area PA.
[0097] FIG. 8 is a plan view illustrating a solar cell module 300
according to still another example embodiment of the present
invention. FIG. 9 is a cross-sectional view taken along a line
III-III' in FIG. 8 according to an embodiment.
[0098] Referring to FIGS. 8 and 9, the solar cell module 300
according to the present example embodiment includes a transparent
substrate 110, a plurality of photoelectric conversion cells 105, a
plurality of first peripheral separating grooves 152, a plurality
of second peripheral separating grooves 154, a plurality of first
dummy cells 162 and a plurality of second dummy cells 164.
[0099] The solar cell module 300 according to the present example
embodiment is substantially the same as the solar cell module 100
described according to one or more embodiments in FIGS. 1 and 3
except that the second dummy cells 164 and the second peripheral
separating grooves 154 are included in the solar cell module 300,
and a terminal of the first peripheral separating grooves 152 and a
terminal of the second peripheral separating grooves 154 are
contacted with each other. Thus, the same reference numerals will
be used to refer to the same elements or like parts as those
described in the embodiments of FIGS. 1 and 3, and any further
explanation concerning the above elements will be omitted.
[0100] The transparent substrate 110 may include an active area AA
where the photoelectric conversion cells 105 are formed thereon and
a peripheral area PA where the first and second dummy cells 162 and
164 are formed thereon. The active area AA and the peripheral area
PA may be divided by the area-separating grooves 101.
[0101] The first peripheral separating grooves 152 are spaced apart
from the area-separating grooves 101 in the peripheral area PA. The
first peripheral separating grooves 152 expose a portion of the
transparent substrate 110. The first peripheral separating grooves
152 may be defined by the first peripheral groove 152a formed in
the peripheral area PA of the lower electrode layer 120, the second
peripheral groove 152b connected to the first peripheral groove
152a in the peripheral area PA, and the third peripheral groove
152c connected to the second peripheral groove 152b in the
peripheral area PA of the upper electrode layer 140.
[0102] The first dummy cells 162 include the lower electrode layer
120, the semiconductor layer 130 and the upper electrode layer
140.
[0103] The second peripheral separating grooves 154 are formed to
contact with the first peripheral separating grooves 152 in the
peripheral area PA. The second peripheral separating grooves 154
may be defined by a fourth peripheral groove 154a formed in the
peripheral area PA of the semiconductor layer 130 and a fifth
peripheral groove 154b connected to the fourth peripheral groove
154a in the peripheral area PA of the upper electrode layer
140.
[0104] The second dummy cells 164 include the lower electrode layer
120. A portion of the lower electrode layer 120 of the second dummy
cells 164 is exposed by the second peripheral separating grooves
154.
[0105] FIG. 10 is an enlarged plan view illustrating a portion "A"
of FIG. 8 according to an embodiment.
[0106] Referring to FIG. 10, the first peripheral separating
grooves 152 and the second peripheral separating grooves 154 are
formed in the peripheral area PA of the transparent substrate 110.
A portion of the second peripheral separating grooves 154 may be
formed to contact with a portion of the area-separating grooves
101. The first peripheral separating grooves 152 may be formed to
contact with a portion of the second peripheral separating grooves
154.
[0107] A method of manufacturing the solar cell module 300 of the
present example embodiment is substantially the same as the method
of manufacturing the solar cell module 100 described according to
one or more embodiments in FIGS. 4A to 4C except for further
including a process of forming the second peripheral separating
grooves 154. Thus, the same reference numerals will be used to
refer to the same elements or like parts as those described in the
embodiments of FIGS. 4A to 4C and any further explanation
concerning the above elements will be omitted.
[0108] The lower electrode layer 120, the semiconductor layer 130
and the upper electrode layer 140 are formed on the transparent
substrate 110, and the first to third cell-separating grooves 112a
to 112c formed in the active area AA may be formed through a laser
process. Then, the first peripheral separating grooves 152 exposing
a portion of the transparent substrate 110 may be formed by
irradiating a fourth laser beam onto the peripheral area PA. The
fourth laser beam may have a wavelength of about 1,064 nm.
[0109] Then, a fifth laser beam may be irradiated onto an area that
is different from an area wherein the first peripheral separating
grooves 152 are formed in the peripheral area PA to form the second
peripheral separating grooves 154 exposing a portion of the lower
electrode layer 120 formed in the peripheral area PA. The fifth
laser beam may have a wavelength of about 532 nm.
[0110] According to the present example embodiment, the first
peripheral separating grooves 152 and the second peripheral
separating grooves 154 are formed to contact with an end portion of
the area-separating grooves 101 contacting with the peripheral area
PA, and not with another end portion of the area-separating grooves
101 contacting with the active area AA, so that a leakage current
may be prevented from being transmitted to the active area even if
a leakage current is generated in the peripheral area PA.
[0111] FIG. 11 is a plan view illustrating a solar cell module 400
according to still another embodiment of the present invention.
FIG. 12 is a cross-sectional view taken along a line IV-V' in FIG.
11 according to an embodiment.
[0112] The solar cell module 400 according to the present example
embodiment is substantially the same as the solar cell module 100
described according to one or more embodiments in FIGS. 1 and 3
except that the lower electrode layer 120, the semiconductor layer
130 and the upper electrode layer 140 that are formed in the
peripheral area are removed. Thus, the same reference numerals will
be used to refer to the same elements or like parts as those
described in the embodiments of FIGS. 1 and 3 and any further
explanation concerning the above elements will be omitted.
[0113] Referring to FIGS. 11 and 12, a solar cell module 400
according to the present embodiment includes a transparent
substrate 110 and a plurality of photoelectric conversion cells
105.
[0114] The transparent substrate 110 may include the active area AA
where the photoelectric conversion cells 105 are formed thereon and
the peripheral area PA surrounding the active area AA. The active
area AA and the peripheral area PA may be divided by the
area-separating grooves 101.
[0115] The lower electrode layer 120, the semiconductor layer 130
and the upper electrode layer 140 may be sequentially deposited in
the active area AA to form the photoelectric conversion cells 105.
The photoelectric conversion cells 105 are divided by the
cell-separating groove 112. The cell-separating groove 112 includes
a plurality of first cell-separating grooves 112a, a plurality of
second-separating grooves 112b, and a plurality of third
cell-separating grooves 112c. The first cell-separating grooves
112a are formed on the lower electrode layer 120. The
second-separating grooves 112b are formed on the semiconductor
layer 130 that are spaced apart from the first cell-separating
grooves 112a. The third cell-separating grooves 112c are formed on
the upper electrode layer 140 that are spaced apart from the second
cell-separating grooves 112b. The third cell-separating grooves
112c expose a portion of the lower electrode layer 120. The upper
electrode layer 140 of each of the photoelectric conversion cells
105 may be electrically connected to the lower electrode layer 120
of an adjacent photoelectric conversion cell 105 through the second
cell-separating groove 112b.
[0116] All of the lower electrode layer 120, the semiconductor
layer 130 and the upper electrode layer 140 formed on the
peripheral area PA may be removed through a laser trimming
process.
[0117] A method of manufacturing a solar cell module according to
the present example embodiment includes a process of forming a
lower electrode layer 120 having the area-separating grooves 101
and the first cell-separating grooves 112a on the transparent
substrate 110, a process of forming a semiconductor layer having
the second cell-separating grooves 112b on the lower electrode
layer 120, a process of forming an upper electrode layer 140 having
the third cell-separating grooves 112c on the semiconductor layer
130, and a process of removing the lower electrode layer 120, the
semiconductor layer 130 and the upper electrode layer 140 formed in
the peripheral area.
[0118] The processes of forming the lower electrode layer 120
having the first separating grooves 112a, the semiconductor layer
130 having the second cell-separating grooves 112b and the upper
electrode layer 140 having the third cell-separating grooves 112c
are substantially the same as the method of manufacturing the solar
cell module 100 described in FIGS. 4A to 4C according to the
previous example embodiment in FIG. 1. Thus, the same reference
numerals will be used to refer to the same elements as those
described in FIGS. 4A to 4C and any further explanation will be
omitted.
[0119] After a process of forming the lower electrode layer 120
having the first cell-separating grooves 112a, the semiconductor
layer 130 having the second cell-separating grooves 112b and the
upper electrode layer 140 having the third cell-separating grooves
112c on the transparent substrate 110, a process of removing the
lower electrode layer 120, the semiconductor layer 130 and the
upper electrode layer 140 by irradiating a laser beam onto the
peripheral area PA may be performed. Therefore, the active area AA
and the peripheral area PA are electrically and physically
separated from each other.
[0120] The active area AA and the peripheral area PA may be
electrically and physically separated from each other by a trimming
process removing the lower electrode layer 120, the semiconductor
layer 130 and the upper electrode layer 140 formed in the
peripheral area PA, and not having a process of forming peripheral
separating grooves in the peripheral area PA.
[0121] FIG. 13 is a graph showing voltage-current characteristics
of each of an example sample and a comparative sample according to
one or more embodiments.
[0122] Referring to FIG. 13, the x-axis represents an open-circuit
voltage (Voc), and the y-axis represents a short-circuit current
(Jsc). In the example sample corresponding to the solar cell
module, a plurality of peripheral separating grooves for insulating
the active area from the peripheral area is spaced apart from an
area-separating groove separating the active area from the
peripheral area as described in the embodiment of FIG. 1. In the
comparative sample corresponding to the solar cell module, the
peripheral separating grooves are formed to overlap with the
area-separating grooves. A curve 1 (CV 1) represents
voltage-current characteristics of the comparative sample. A curve
2 (CV2) represents voltage-current characteristics of the example
sample. A curve 3 (CV3) represents voltage-current characteristics
of the maximum output that is obtainable from a solar cell
module.
[0123] As shown in FIG. 13, it could be seen that the
voltage-current characteristics curve 2 (CV2) of the example sample
approaches the voltage-current characteristics curve 3 (CV3), which
represents the maximum output that is obtainable, in comparison
with the voltage-current characteristics curve 1 (CV 1) of the
comparative sample.
[0124] That is, it could be seen that various factors determining
characteristics of a solar cell, for example, the open-circuit
voltage (Voc), the short-circuit current (Jsc) and a fill factor
(FF) are improved when the first peripheral separating grooves
insulating the active area from the peripheral area are spaced
apart from the area-separating grooves. In this case, the fill
factor (FF) is an index representing how the shape of the
voltage-electric current approaches a shape of the curve 3 (CV3) in
a state in which light is applied to a solar cell module. As shown
in FIG. 13, it could be seen that the voltage-current
characteristics curve 2 (CV2) of the sample approaches a shape of
the curve 3 (CV3) in comparison with the voltage-current
characteristics curve 1 (CV 1) of the comparative sample.
[0125] The foregoing is illustrative of the present disclosure and
is not to be construed as limiting thereof. Although a few example
embodiments of the present invention have been described, those
skilled in the art will readily appreciate that many modifications
are possible in the example embodiments without materially
departing from the novel teachings and advantages of the present
disclosure. Accordingly, all such modifications are intended to be
included within the scope of the present disclosure as defined in
the claims. In the claims, means-plus-function clauses are intended
to cover the structures described herein as performing the recited
function and not only structural equivalents but also equivalent
structures. Therefore, it is to be understood that the foregoing is
illustrative of the present disclosure and is not to be construed
as limited to the specific example embodiments disclosed, and that
modifications to the disclosed example embodiments, as well as
other example embodiments, are intended to be included within the
scope of the appended claims. The present disclosure is defined by
the following claims, with equivalents of the claims to be included
therein.
* * * * *