U.S. patent application number 12/593402 was filed with the patent office on 2010-07-08 for copper alloy material, and method for production thereof.
Invention is credited to Tatsuhiko Eguchi, Hiroshi Kaneko, Kuniteru Mihara.
Application Number | 20100170595 12/593402 |
Document ID | / |
Family ID | 39830940 |
Filed Date | 2010-07-08 |
United States Patent
Application |
20100170595 |
Kind Code |
A1 |
Kaneko; Hiroshi ; et
al. |
July 8, 2010 |
COPPER ALLOY MATERIAL, AND METHOD FOR PRODUCTION THEREOF
Abstract
A copper alloy material according to the present invention is
characterized in that the copper alloy material includes: an
element X between 0.1% and 4% by mass, in which the element X
represents one transition element or not less than two elements
selected from Ni, Fe, Co and Cr; an element Y between 0.01% and 3%
by mass, in which the element Y represents one element or not less
than two elements selected from Ti, Si, Zr and Hf; and a remaining
portion to be comprised of copper and an unavoidable impurity,
wherein the copper alloy material has an electrical conductivity of
not less than 50% IACS, an yield strength of not less than 600 MPa,
and a stress relaxation rate of not higher than 20% as to be
measured after the same is maintained for 1000 hours at a state
under applying a stress of 80% of the yield strength.
Inventors: |
Kaneko; Hiroshi; (Tokyo,
JP) ; Mihara; Kuniteru; (Tokyo, JP) ; Eguchi;
Tatsuhiko; (Tokyo, JP) |
Correspondence
Address: |
Kubotera & Associates, LLC
200 Daingerfield Rd, Suite 202
Alexandria
VA
22314
US
|
Family ID: |
39830940 |
Appl. No.: |
12/593402 |
Filed: |
March 28, 2008 |
PCT Filed: |
March 28, 2008 |
PCT NO: |
PCT/JP2008/056196 |
371 Date: |
March 25, 2010 |
Current U.S.
Class: |
148/554 ;
148/411; 148/412; 148/413; 148/414 |
Current CPC
Class: |
C22C 9/06 20130101; C22C
9/00 20130101; C22F 1/08 20130101 |
Class at
Publication: |
148/554 ;
148/411; 148/412; 148/413; 148/414 |
International
Class: |
C22F 1/08 20060101
C22F001/08; C22C 9/00 20060101 C22C009/00; C22C 9/02 20060101
C22C009/02; C22C 9/04 20060101 C22C009/04; C22C 9/06 20060101
C22C009/06; C22C 9/10 20060101 C22C009/10 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 28, 2007 |
JP |
2007-086026 |
Mar 27, 2008 |
JP |
2008-085013 |
Claims
1. A copper alloy material, comprising: an element X between 0.1%
and 4% by mass, said element X including one or more than two of
Ni, Fe, Co and Cr; an element Y between 0.01% and 3% by mass, said
element Y including one or more than two of Ti, Si, Zr and Hf; and
a remaining portion formed of copper and an unavoidable impurity,
wherein said copper alloy material has an electrical conductivity
of not less than 50% IACS, an yield strength of not less than 600
MPa, and a stress relaxation rate of not higher than 20% after a
stress of 80% of the yield strength is applied for 1000 hours.
2. The copper alloy material according to claim 1, further
comprising an element Z between 0.01% and 3% by mass, said element
Z including one or more than two of Sn, Mg, Zn, Ag, Mn, B and
P.
3. The copper alloy material as defined in claim 1, wherein said
copper alloy material has an average crystalline grain diameter not
larger than 10 .mu.m.
4. The copper alloy material according to claim 1, further
comprising a second phase having a particle diameter between 50 nm
and 1000 nm and a distribution density not lower than 104 pieces
per mm.sup.2.
5. The copper alloy material according to claim 4, wherein said
second phase is formed of a chemical compound including at least
one of Si, Co, Ni, Fe, Ti, Zr and Cr.
6. The copper alloy material according to claim 5, wherein said
second phase is formed of the chemical compound including three
elements.
7. A method for production of the copper alloy material according
to claim 1, comprising the step of: applying a process on a copper
alloy material, said process sequentially including casting (1),
homogenizing heat treatment (2), hot working (3), facing (4), cold
working (6), solution heat treatment (7), cold working (9), aging
precipitation heat treatment (10), cold working (11), and refining
annealing heat treatment (12), wherein a sum of a processing rate
R1(%) in the cold working (9) and a processing rate R2(%) in the
cold working (11) is between 5% and 65%.
8. A method for production of the copper alloy material for an
electronic/electrical device according to claim 1, comprising the
step of: applying a process on a copper alloy raw material, said
process sequentially including casting (1), homogenizing heat
treatment (2), hot working (3), facing (4), cold working (6),
solution heat treatment (7), aging precipitation heat treatment
(8), cold working (9), aging precipitation heat treatment (10),
cold working (11), and refining annealing heat treatment (12),
wherein a sum of a processing rate R1(%) in the cold working (9)
and a processing rate R2(%) in the cold working (11) is between 5%
and 65%, a treatment temperature in the aging precipitation heat
treatment (8) is between 400.degree. C. and 700.degree. C., and a
treatment temperature in the aging precipitation heat treatment
(10) is lower than the treatment temperature in the aging
precipitation heat treatment (8).
9. The method for production of the copper alloy material for an
electronic/electrical device according to claim 7, wherein said
process further includes aging precipitation heat treatment (5) at
a temperature between 400.degree. C. and 800.degree. C. for between
five seconds and twenty hours after the facing (4), said cold
working (6) being performed thereafter.
Description
TECHNICAL FIELD
[0001] The present invention relates to a copper alloy material and
to a method for production thereof.
BACKGROUND ART
[0002] A copper alloy material has been used for applications such
as a lead frame, a connector, a terminal material, or the like of
an electrical and electronic device, more specifically a connector
or a terminal material to be mounted on a motor vehicle, a relay, a
switch, a socket, or the like. In the applications, the copper
alloy needs to have properties such as an electrical conductivity,
an yield strength (an yield stress), a tensile strength, a bending
workability and an yield stress relaxation characteristic.
Recently, the properties need to be improved further as the demand
for a smaller size, a lighter weight, a higher function, a higher
package density, or a higher environment temperature of the
electrical and electronic device increases.
[0003] Conventionally, a copper-based material such as phosphor
bronze, red brass, brass, or the like, in addition to an iron-based
material has been widely for an electrical and electronic device in
general. A work hardening process is a combination of a solid
solution hardening of Sn and/or Zn with a cold working such as a
rolling out, a wire drawing, or the like, thereby improving
strengths of the alloys. However, with the technique, it is
difficult to obtain sufficient electrical conductivity. Moreover,
the cold working is conducted at a higher processing rate to obtain
a higher strength, so that it is difficult to obtain sufficient
bending workability and yield stress relaxation characteristic.
[0004] To this end, a precipitation hardening is provided as a
method for improving strength, in which a fine second phase in a
nanometer order is precipitated in a material. With the method, it
is possible to improve the strength and an electrical conductivity,
thereby being available to various alloy systems. For example, in a
Cu--Ni--Si based alloy (CDA70250 registered in CDA (Copper
Development Association)), a chemical compound of Ni and Si is
precipitated in Cu, thereby improving the strength. However, the
Cu--Ni--Si based alloy does not have sufficient electrical
conductivity, and it is necessary to improve the electrical
conductivity.
[0005] In general, in a precipitation hardened type alloy, a
solution heat treatment is introduced for solution heating a solute
atom as an intermediate process before a heat aging precipitation
treatment to obtain a fine precipitated state. The processing is
conducted at a temperature between 750.degree. C. and 1000.degree.
C. depending on an alloy system, a solute concentration, or the
like. In order to obtain a sufficient amount of precipitation
hardening, it is preferable to increase a concentration of the
solute atoms, and to maintain a higher temperature in the process
of treating to be solution heated to increase a density of the
precipitation.
[0006] In order to obtain higher electrical conductivity, it is
necessary to select a precipitation type copper alloy system having
a small solid solubility limit of solute atoms into a copper
matrix. In this case, a higher temperature is necessary to be
solution heated in order to obtain a sufficient amount of
precipitation hardening. When the temperature of the process of
treating to be solution heated increases, a crystalline grain
diameter of a material tends to increase. When the crystalline
grain diameter becomes rough and large, a local transformation in
the process of bending work tends to increase, thereby causing a
crack or the like. Furthermore, a wrinkle tends to become large on
a surface of a bend section, so that an electric current may be
converged, or a plated surface of a material may crack when the
bend section is used as a contact. Therefore, there is required a
technology to decrease the crystalline grain diameter under a high
temperature in the solution heat treatment.
[0007] An invention has disclosed a method for production of a
copper alloy with high strength, in which a chemical compound of Ni
and Ti is dispersed (refer to Japanese Patent Publication No.
04-053945). Moreover, another invention has disclosed a method for
production of a copper alloy, in which a chemical compound of Ti
and Fe is dispersed (refer to Japanese Patent Publication No.
07-258806).
[0008] However, it is difficult to improve the strength, the
electrical conductivity, the yield stress relaxation
characteristic, and the bending workability together, and it is not
to completely meet the demand for all properties.
DISCLOSURE OF THE INVENTION
[0009] The present inventors have examined regarding a composition
of a copper alloy material, an average crystalline grain diameter
thereof, an electrical conductivity property, an yield strength, a
stress relaxation characteristic and a bending workability. It is
found that it becomes possible to improve the properties by
controlling properly individual conditions, thereby achieving the
present invention.
[0010] That is, the present invention provides the following
aspects.
[0011] 1. According to a first aspect of the present invention, a
copper alloy material includes: an element X between 0.1% and 4% by
mass, in which the element X represents one transition element or
not less than two elements selected from Ni, Fe, Co and Cr; an
element Y between 0.01% and 3% by mass, in which the element Y
represents one element or not less than two elements selected from
Ti, Si, Zr and Hf; and a remaining portion to be comprised of
copper and an unavoidable impurity, wherein the copper alloy
material has an electrical conductivity of not less than 50% IACS
(international annealed copper standard), an yield strength of not
less than 600 MPa, and a stress relaxation rate of not higher than
20% as to be measured after the same is maintained for 1000 hours
at a state under applying a stress of 80% of the yield
strength.
[0012] 2. According to a second aspect of the present invention,
the copper alloy material in the first aspect further includes an
element Z between 0.01% and 3% by mass, in which the element Z
represents one element or not less than two elements selected from
Sn, Mg, Zn, Ag, Mn, B and P.
[0013] 3. According to a third aspect of the present invention, in
the copper alloy material in the first or the second aspect, an
average crystalline grain diameter is not larger than 10 .mu.m, and
it is superior in bending workability.
[0014] 4. According to a fourth aspect of the present invention, in
the copper alloy material in one of the first to the third aspects,
a second phase having a particle diameter between 50 nm and 1000 nm
exists with a distribution density as not lower than 104 pieces per
mm.sup.2.
[0015] 5. According to a fifth aspect of the present invention, in
the copper alloy material in the fourth aspect, the second phase is
formed of a chemical compound which includes at least one element
selected from Si, Co, Ni, Fe, Ti, Zr and Cr.
[0016] 6. According to a sixth aspect of the present invention, in
the copper alloy material in the fourth or the fifth aspect, the
second phase is formed of a chemical compound which is comprised of
three elements.
[0017] 7. According to a seventh aspect of the present invention, a
method for production of the copper alloy material in one of the
first to the sixth aspects, comprises the steps of: casting (1);
treating with heat for homogenizing (2); hot working (3); facing
(4); cold working (6); treating with heat to be solution heated
(7); cold working (9); treating with heat for aging precipitation
(10); cold working (11); and annealing to be heat treated for
refining (12). The processes are performed in order on a copper
alloy raw material, and a sum of a processing rate as an R1(%) at
the step of cold working (9) and a processing rate as an R2(%) at
the step of cold working (11) is between 5% and 65%.
[0018] 8. According to an eighth aspect of the present invention, a
method for production of the copper alloy material for an
electronic/electrical device in one of the first to the sixth
aspects, comprises the steps of: casting (1); treating with heat
for homogenizing (2); hot working (3); facing (4); cold working
(6); treating with heat to be solution heated (7); treating with
heat for aging precipitation (8); cold working (9); treating with
heat for aging precipitation (10); cold working (11); and annealing
to be heat treated for refining (12), wherein the processes are
performed in order onto a substance for the copper alloy material,
a sum of a processing rate as an R1(%) at the step of cold working
(9) and a processing rate as an R2(%) at the step of cold working
(11) is between 5% and 65%, a heat treatment temperature at the
step of treating with heat for aging precipitation (8) is between
400.degree. C. and 700.degree. C., and a heat treatment temperature
at the step of treating with heat for aging precipitation (10) is
as lower than the heat treatment temperature at the step of
treating with heat for aging precipitation (8).
[0019] 9. According to a ninth aspect of the present invention, in
the method for production of the copper alloy material for an
electronic/electrical device in the seventh or the eighth aspect, a
further step of treating with heat for aging precipitation (5) is
performed with a temperature between 400.degree. C. and 800.degree.
C. for between five seconds and twenty hours after the step of
facing (4), and the step of cold working (6) is performed
thereafter.
[0020] The above and other aspects and advantages according to the
present invention will be further clarified by the following
description, with reference to the drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] FIG. 1 is a schematic explanatory drawing showing a method
of testing a stress relaxation.
BEST MODE FOR CARRYING OUT THE INVENTION
[0022] An embodiment to be preferred for a copper alloy material
according to the present invention will be described in detail
below.
[0023] First of all, reasons for adding each component and content
constituting a copper alloy material of the present invention
applicable to an electrical machinery and apparatus and to
electronic equipment will be explained.
[0024] According to the present invention, an element X represents
a transition element that has a 3d electron in an outer shell, such
as Ni, Fe, Co, Cr, or the like. Moreover, an element Y represents
an element that has valence electrons as two pieces or four pieces,
such as Ti, Si, Zr, Hf, or the like. Moreover, the elements X and
the elements Y may be a chemical compound, such as NiSiTi, NiSiZr,
CoSiTi, Co.sub.2Si, CuSiTi, CoHfSi, CuHfSi, Fe.sub.5Si.sub.3,
Ti.sub.5Si.sub.3, Ni.sub.3Ti.sub.2Si, Co.sub.3Ti.sub.2Si,
Cr.sub.3Ti.sub.2Si, Fe.sub.2Ti, Ni.sub.3Zr.sub.2Si, CoSiZr,
Cr.sub.2Ti, CrMnTi, Ni.sub.2Si, Ni.sub.3Si, Ni.sub.9Ti.sub.2Zr, or
the like. Further, the chemical compounds or a chemical compound in
which any of the constituent elements are substituted by another
element are precipitated mostly with a fine size as not larger than
50 nm as a matrix in the copper. The elements X and the elements Y
have a function to improve the strength, the electrical
conductivity and the yield stress relaxation characteristic.
[0025] Still further, it is not desirable regarding the effect in a
case where each of the contents for the elements X is not larger
than 0.1 mass %, or where each of the contents for the elements Y
is not larger than 0.01 mass %, because the amount of precipitation
hardening is not sufficient. Still further, it is not desirable
either in a case where any one of the elements X is not less than 4
mass %, or where any one of the elements Y is not less than 3 mass
%, because there is generated a crystallized precipitate as rougher
and larger in a texture of the alloy material, that may worsen a
plating ability thereon, may become a cause to generate a crack at
the period of bending work, or the like.
[0026] Therefore, a range for any one of the element X should be
between 0.1 mass % and 4 mass %, and it is desirable to be between
0.3 mass % and 3.0 mass %, or it is further preferable to be
between 0.3 mass % and 2.5 mass %. Furthermore, a range for any one
of the element Y to be contained should be between 0.01 mass % and
3 mass %, and it is desirable to be between 0.03 mass % and 2.0
mass %, or it is further preferable to be between 0.04 mass % and
1.5 mass %.
[0027] According to the present invention, an element Z represents
Sn, Mg, Zn, Ag, Mn, B and P.
[0028] The elements of the Sn, the Mg, the Zn, the Ag and the Mn
have a function that improves the strength, the yield stress
relaxation characteristic, or the like, due to a synergistic effect
as to be formed a chemical compound with any of the elements X
and/or any of the elements Y, or by being solution heated in a
copper alone. Moreover, due to the B and the P it becomes able to
obtain the function that improves the strength thereof and the
yield stress relaxation characteristic thereof, by increasing a
density of a fine precipitate that is comprised of any of the
elements X and any of the elements Y, or any of the elements X, any
of the elements Y and any of the elements Z. Further, any of the
elements Z may become the constituent elements for a second phase
that will be described below and that has an advantage in order to
control a crystalline grain diameter thereof.
[0029] Still further, there may be a case where it is not able to
obtain sufficiently the functions and the advantages in a case
where the content of any one of the elements Z is excessively low.
Furthermore, there may be given rise to such as a decrease in the
electrical conductivity thereof, a worsening of castability, or the
like, in a case where the content thereof is excessively high.
Therefore, a range of the content of any one of the elements Z is
normally between 0.01 mass % and 3 mass %, and it is desirable to
be between 0.03 mass % and 2 mass %, or it is further preferable to
be between 0.05 mass % and 1.0 mass %.
[0030] Here the copper alloy material according to the present
invention has the electrical conductivity of not less than 50%
IACS, the yield strength of not less than 600 MPa, and the stress
relaxation rate of not higher than 20% as to be measured after the
same is maintained for 1000 hours at a state under applying a
stress of 80% of the yield strength thereof. Moreover, there any
upper limit is not set for the electrical conductivity thereof,
however, the same is normally not more than 70% IACS. Further, any
upper limit either is not set for the yield strength, however, the
same is normally not more than 900 MPa. Still further, the above
mentioned stress relaxation rate thereof is normally as not lower
than 8%, though there is not set any lower limit either.
[0031] Still further, it is able to measure the stress relaxation
rate thereof under a condition at approximately 150.degree. C. for
1000 hours with loading an 80% of the yield strength thereof as an
initial stress by making use of a cantilever method, that is
pursuant to the standard specification EMAS-3003 of Electronic
Material Association of Japan, and that will be described in
further detail later.
[0032] Still further, it is able to control the crystalline grain
diameter thereof by performing a solution heat treatment at a
higher temperature. And then it is able to obtain the bending
workability as to be more excellently in a case where an average of
the crystalline grain diameter thereof is not larger than 10 .mu.m.
Still further, it becomes able to obtain further function and
advantage that improve the strength thereof by designing the
crystalline grains to be as smaller. That is to say, it becomes
able to obtain the excellent bending workability and the excellent
strength thereof by designing the preferable average crystalline
grain diameter thereof as not larger than 6 .mu.m, or by designing
the same as not larger than 4 .mu.m as further preferably. Still
further, there is no lower limit in particular regarding the
average crystalline grain diameter thereof, however, the same is
not smaller than 3 .mu.m in a normal case.
[0033] Still further, it is able to measure the average crystalline
grain diameter thereof according to the JISH0501 as a method of
section that will be described in detail later.
[0034] Still further, it is found out according to the present
invention that it is effective to diffuse a second phase that has
the particle diameter between 50 nm and 1000 nm with a density
thereof as not lower than 104 pieces per mm.sup.2 regarding the
control of the crystalline grain diameter thereof. Here, the second
phase principally means a precipitate and a part of crystallized
precipitates. And then it becomes able to obtain an advantage that
suppress a growth of recrystallized grains in a case where the
second phase exists at the solution heat treatment at a higher
temperature of such as not lower than 750.degree. C. approximately.
As a result, it becomes able to further improve the strength
thereof as further higher and the bending workability thereof as
well, because it becomes able to maintain the crystalline grain
diameter as further smaller. Here, it is desirable to design the
particle diameter of the second phase to be between 60 nm and 800
nm, or it is further preferable to be between 70 nm and 700 nm.
Still further, it is desirable to design the distribution density
thereof as not lower than 105 pieces per mm.sup.2.
[0035] Further, the effect to suppress the growth of the grains
becomes to be decreased in a case where the particle diameter of
the above mentioned second phase is excessively smaller. On the
contrary in a case where the same thereof is excessively larger,
there may be given rise to such as a worsening in bending
workability thereof, a decrease in density of the second phase
thereof, or the like.
[0036] Furthermore, it is able to measure the particle diameter of
the second phase and the distribution density thereof according to
a method that will be described in detail later.
[0037] Here according to the second phase, it becomes able to
enhance the functions and the advantages that suppress the
crystalline grain diameter thereof as not to be rougher and larger,
because the second phase becomes able to exist stably without being
solution heated in the copper even at a higher temperature thereof
by being composed of the element that has a melting point not lower
than 1400.degree. C., such as Si, Co, Ni, Fe, Ti, Zr, Cr, or the
like.
[0038] Moreover, the following cases are included to be more
specific regarding a configuration of the second phase:
[0039] A. a case where any one of the above mentioned elements is a
single element;
[0040] B. a case where any one of the above mentioned elements is a
chemical compound which contains Si, Co, Ni, Fe, Ti, Zr and Cr;
and
[0041] C. a case where any one of the above mentioned elements
forms a chemical compound which is bound with copper, such as
Cu--Zr, Cu--Hf, or the like.
[0042] Further, as a case of the (B) for example, there may be
given an example that is formed a chemical compound, such as
Ni--Co--Cr--Si, Co--Si, Ni--Co--Si, Cr--Ni--Si, Co--Cr--Si, Ni--Zr,
Mn--Zr, Ni--Mn--Zr, Fe--Zr, Mn--Zr, Fe--Mn--Zr, Ni--Ti, Co--Ti,
Ni--Co--Ti, Fe--Ni--Si, Fe--Si, Mn--Si, Ni--Mn--P, Fe--P, Ni--P,
Fe--Ni--P, Mn--B, Fe--B, Mn--Fe--B, Ni--B, Cr--B, Ni--Cr--B,
Ni--Co--B, Ni--Co--Hf--Si, Ni--Co--Al, Ni--Ca, Ni--Co--Mn--Sn,
Co--Ni--P, Al--Hf, Al--Zr, Al--Cr, or the like.
[0043] Furthermore, it is more preferable for the second phase to
be as a chemical compound that is comprised of three elements as
ternary, such as Cr--Ni--Si, Co--Cr--Si, Fe--Ni--Si, or the
like.
[0044] Next, a preferred process of treatments will be exemplarily
described in detail below regarding a method for production of a
copper alloy material, that draw out as most effectively the
aspects of the alloy systems according to the present invention,
and that is suitable for an application to an electrical and
electronic device.
[0045] The following processes are performed in order onto a
substance for a copper alloy material, that comprises the steps of:
casting (1); treating with heat for homogenizing (2); hot working
(3); facing (4); cold working (6); treating with heat to be
solution heated (7); cold working (9); treating with heat for aging
precipitation (10); cold working (11); and then annealing to be
heat treated for refining (12).
[0046] Here the step of cold working (6) has a function thereby a
precipitated state of the fine precipitate becomes to be higher in
density thereof and finer by controlling thereof at the step of
treating with heat to be solution heated (7). And then thereby it
becomes able to improve the strength thereof, the electrical
conductivity thereof, and the yield stress relaxation
characteristic thereof. Moreover, it becomes able to improve the
strength thereof due to the work hardening by making use of the
step of cold working (9). Further, it is desirable for a sum of a
processing rate as an R1(%) at the step of cold working (9) and a
processing rate as an R2(%) at the step of cold working (11) to be
between 5% and 65%.
[0047] Still further, there may be a case where the above mentioned
advantage is not sufficiently obtained in a case where the sum of
the processing rates of the both steps of cold working is
excessively smaller. Still further, there may be a case where the
bending workability becomes to be worsened excessively in a case
where the sum thereof is excessively larger. Therefore, it is able
to design all of the properties thereof as excellently by
controlling the sum of the processing rates of the two steps
thereof to be between 5% and 65%. Furthermore, the processing rates
is desirable to be between 10% and 60%, or it is further preferable
to be between 15% and 55%.
[0048] In addition to the above mentioned processes regarding the
method for production of the copper alloy material according to the
present invention, it is desirable to add a heat aging
precipitation treatment (8) after the solution heat treatment (7)
in the above mentioned processes of treatments. Here, the heat
aging precipitation treatment (8) has a function that the
precipitated state becomes further higher in density thereof and
further finer in the heat aging precipitation treatment (8),
because it gives a core for the precipitation, with increasing a
dislocation density thereof at the process of cold working (7). And
then thereby it becomes able to improve the strength thereof, the
electrical conductivity thereof and the yield stress relaxation
characteristic thereof. Moreover, a temperature of the heat aging
precipitation treatment (8) should be within a temperature range
between 400.degree. C. and 700.degree. C., and it is desirable to
be between 425.degree. C. and 675.degree. C., or it is further
preferable to be between 450.degree. C. and 650.degree. C. On the
contrary, there may be a case where the above mentioned advantage
is not sufficiently obtained, because a precipitated amount is too
lower in a case where the temperature thereof is excessively lower,
or because a precipitate becomes rougher and larger in a case where
the same is excessively higher. Therefore, it is able to obtain the
most excellent properties thereof in a case between 400.degree. C.
and 700.degree. C. with an amount of time for between five seconds
and twenty hours.
[0049] Further, it is desirable to design a processing temperature
for the heat aging precipitation treatment (10) to be as lower than
the processing temperature for the of treating with heat for aging
precipitation (8), because it is necessary to maintain the
precipitate to be as higher in density thereof and finer that
contributes to the precipitation hardening thereof.
[0050] Still further, it is desirable to perform the heat aging
precipitation treatment (5) with a processing temperature between
400.degree. C. and 800.degree. C. for between five seconds and
twenty hours after the process of facing (4), that is a method in
order to control a dispersion state of the second phase which has a
particle diameter between 50 nm and 1000 nm. Here the second phase
is precipitated, such as at the cooling process in the process of
hot working (3), at the process of raising the temperature thereof
in the solution heat treatment (7), that is designed in order to
control the crystalline grain diameter thereof, and that
contributes to control the crystalline grain diameter thereof as
smaller. Moreover, the heat aging precipitation treatment (5) has a
function thereby the density of the above mentioned second phase
becomes further higher. On the contrary the advantage becomes to be
decreased in a case where the temperature thereof is excessively
lower, or in a case where the same is excessively higher, or in a
case where an amount of time for the process is excessively
shorter. Further, the advantage becomes to be decreased either in a
case where the amount of time for the process is excessively
longer, because the distribution density of the second phase
becomes rougher and larger. Hence it is desirable for the
temperature range of the heat aging precipitation treatment (5) to
be between 425.degree. C. and 675.degree. C., or it is further
preferable to be between 450.degree. C. and 650.degree. C.
[0051] Thus, it becomes able to provide the copper alloy material
and the method for production thereof according to the present
invention, that is superior in the electrical conductivity thereof,
the strength thereof, the yield stress relaxation characteristic
thereof and the bending workability thereof at the same time, and
that is the most suitable for the application to an electrical and
electronic device. In an assessment of the stress relaxation
characteristic thereof, it is able to obtain the advantages at
least under a state of not higher than 150.degree. C. for the
copper alloy material according to the present invention, though
the assessment is performed at the temperature of 150.degree. C. as
pursuant to the standard specification.
[0052] Moreover, it becomes able to provide the copper alloy
material according to the present invention, that is superior in
the electrical conductivity thereof, the strength thereof, the
yield stress relaxation characteristic thereof and the bending
workability thereof, and that is suitable for the application to
such as a connector for an electrical and electronic device, a
material for a terminal, or the like, and more specifically to such
as a connector or a material for a terminal to be made use for such
as mounting on a motor vehicle, a relay, a switch, a socket, or the
like. Furthermore, it becomes able to provide a copper alloy
material of precipitation type and a technology in order to control
a crystalline grain diameter thereof at a period of production in
particular, that it is difficult to realize the higher electrical
conductivity as not lower than 50% IACS with making use of
Cu--Ni--Si system on the contrary.
EXAMPLES
[0053] Next, the present invention will be described in further
detail below, with reference to the following examples, however,
the present invention will not be limited to any one of the
examples.
[0054] Here there is performed an examination on the
characteristics thereof as described below regarding each of copper
alloy materials as sample materials that are obtained according to
the following examples.
[0055] A. Yield Strength (YS):
[0056] There is performed a measurement for three test pieces for
the number as JIS Z2201-12B with being pursuant to JIS 22241, that
are cut out in a direction as parallel to a rolling. And then there
is calculated an average value thereof.
[0057] B. Electrical Conductivity (EC):
[0058] There is performed a measurement of specific resistance by
making use of the four terminal method in a constant temperature
bath which is maintained at 20.degree. C. (.+-.0.5.degree. C.), and
then thereby there is calculated the electrical conductivity
thereof. In the case thereof there is assumed to be as 100 mm
regarding a distance between each of the terminals.
[0059] C. Stress Relaxation Rate (SR):
[0060] There is performed a measurement thereof under the condition
at approximately 150.degree. C. for 1000 hours, that is pursuant to
the standard specification EMAS-3003 of Electronic Material
Association of Japan. Moreover, there is loaded an 80% of the yield
strength thereof as the initial stress by making use of the
cantilever method.
[0061] FIG. 1 is an explanatory drawing in order to show a method
of testing the stress relaxation characteristic thereof, wherein
FIG. 1(a) shows a state before the process of treating with heat,
and FIG. 1(b) shows a state after the process of treating with
heat. Here, a position of the test piece No. 1 at the time of
adding the initial stress as the 80% of the yield strength thereof
is defined to be as having a distance of .delta..sub.0 from a
reference level held on a testing stand No. 4 as shown in FIG.
1(a). On the contrary a position of the test piece No. 2 is defined
to be as having a distance of H.sub.t from the reference level,
that is after maintaining the test piece No. 1 for 1000 hours in
the constant temperature bath of 150.degree. C. (the process of
treating with heat at the state of the No. 1), and then that is
after removing the load, as shown in FIG. 1(b). Moreover, the No. 3
represents a test piece in the contrast in a case where there is
not loaded any stress thereunto, and then a position thereof is
defined to be as having a distance of H.sub.1 from the reference
level.
[0062] And then there is performed a calculation of the stress
relaxation rate (%) thereof in accordance with the following
formula, according to the above mentioned relations.
(H.sub.t-H.sub.1)/(.delta..sub.0-H.sub.1).times.100
[0063] In the formula, .delta.0 designates the distance from the
reference level regarding the test piece at the period when the
same is bended, the H.sub.1 designates the distance from the
reference level regarding the test piece at the time when the same
is not bended, and the H.sub.t designates the distance from the
reference level regarding the test piece that is after being
performed the process of treating with heat and being bended, and
then that is after unloading.
[0064] D. Bending Workability (R/t):
[0065] Each test piece is cut out with a width of 10 mm and a
length of 25 mm in a direction as parallel to the rolling direction
thereof. And then there is performed a W-bending with an axis of
bending each thereof in parallel to the rolling direction thereof
or in a right angle. Moreover, there is performed thereafter an
observation whether or not any cracking at each part of the bending
work thereof by making use of an optical microscope and a scanning
electron microscope (SEM). And then thereby there is adopted a
ratio between a bend radius as an R and a board thickness as at
that are the limit values of which there is not occurred any
cracking thereon. And hence there is performed a calculation of the
ratio as R/t. Further, the samples are selected from the sample
materials for the above mentioned measurements, that have
individual board widths w of approximately ten millimeters, and
then on which surfaces are rubbed slightly with making use of a
metal polishing powder in order to remove an oxide film layer
thereon. And then thereafter there is performed the above mentioned
w-bending for each thereof to have individual angles at each inner
side of the bending thereof as ninety degrees respectively, for the
samples with the w-bending in parallel to the rolling direction
(Good Way: GW hereinafter), and for the other samples with the
w-bending in a right angle to the rolling direction (Bad Way: BW
hereinafter). And hence there is performed the above mentioned
measurements for the two types of the samples.
[0066] E. Average Crystalline Grain Diameter (Grain Size: GS):
[0067] At first there is performed a finishing for some sample
materials to have individual mirror finished surfaces for
individual cut faces thereon that are in a right angle to the
rolling direction, by making use of a wet polishing and then by
making use of a buffing. And then thereafter there is performed a
corrosion on the polished surfaces thereof for a several seconds
with making use of a solution of chromic acid:aqua=1:1. Moreover,
there is performed taking some photographs by making use of the
scanning electron microscope (SEM) with a reflection electron image
at a magnifying power between 400 times and 1000 times. And hence
there is performed a measurement for a particle diameter on
individual cut faces thereof by making use of a crosscut method as
pursuant to JIS H0501.
[0068] F. Particle Diameter and Distribution Density of Second
Phase:
[0069] At first there is performed a punching out for some sample
materials to have individual diameters of approximately three
millimeters. And then thereafter there is performed a thin film
polishing by making use of a twin jet polishing method to produce a
test piece for observation. Moreover, photographs are taken as ten
fields of view for each thereof by a transmission electron
microscope (TEM) with a magnification of 2000 times and 40000 times
and an acceleration voltage of 300 kV. A particle diameter of the
second phase and the distribution density thereof are measured. The
number of the particles having individual diameters between 50 nm
and 1000 nm in each field of view is measured, and then there is
performed an arithmetic execution on the number of pieces to be
converted into a part per a unit area (per mm.sup.2). Furthermore,
the chemical compounds are identified by making an energy
dispersive X-ray spectroscopy (EDX) attached to TEM.
Example 1
[0070] At first there is performed a mixing of the elements X and
of the elements Y in order to obtain the content and the
composition (mass %) as shown in the following Table 1-1 and Table
1-2. Moreover, there is performed thereafter a dissolution of an
alloy by making use of a high frequency melting furnace, in which a
remaining portion is comprised of copper and an unavoidable
impurity. And hence there is obtained an ingot by casting the same
with a cooling rate between 0.1.degree. C. per second and
100.degree. C. per second. Further, there is performed a process of
treating with heat for homogenizing the same at between 900.degree.
C. and 1050.degree. C. for between a half hour and ten hours. And
then thereafter there is performed a process of hot working for the
same with a reduction in area of not less than 50% at a processing
temperature of not lower than 650.degree. C. A water quenching is
performed thereafter, and a facing is performed in order to remove
an oxidizing scale.
[0071] Thereafter, the copper alloy materials is produced through
one of the Processes A to D described below and indicated with the
capital letters.
[0072] Process A: there is performed a process of cold working with
a reduction in area between 50% and 98%, there is performed a
solution heat treatment at a temperature between 800.degree. C. and
1000.degree. C., there is performed another process of cold working
with a reduction in area between 5% and 50%, there is performed a
heat aging precipitation treatment at a temperature between
400.degree. C. and 650.degree. C., there is performed a process of
finishing cold working with a reduction in area between 5% and 50%,
and then there is performed a process of annealing to be heat
treated for refining at a temperature between 200.degree. C. and
450.degree. C. with an amount of time for between five seconds and
ten hours.
[0073] Process B: there is performed the process of cold working
with the reduction in area between 50% and 98%, there is performed
the solution heat treatment at the temperature between 800.degree.
C. and 1000.degree. C., there is performed a heat aging
precipitation treatment at a temperature between 400.degree. C. and
650.degree. C., there is performed the other process of cold
working with the reduction in area between 5% and 50%, there is
performed another heat aging precipitation treatment at the
temperature between 400.degree. C. and 650.degree. C., there is
performed the process of finishing cold working with the reduction
in area between 5% and 50%, and then there is performed a process
of annealing to be heat treated for refining at a temperature
between 200.degree. C. and 550.degree. C. with the amount of time
for between five seconds and ten hours.
[0074] Process C: there is performed the heat aging precipitation
treatment at the temperature between 400.degree. C. and 650.degree.
C., there is performed the process of cold working with the
reduction in area between 5% and 98%, there is performed the
solution heat treatment at the temperature between 800.degree. C.
and 1000.degree. C., there is performed the other process of cold
working with the reduction in area between 5% and 50%, there is
performed the other heat aging precipitation treatment at the
temperature between 400.degree. C. and 650.degree. C., there is
performed the process of finishing cold working with the reduction
in area between 5% and 50%, and then there is performed the process
of annealing to be heat treated for refining at the temperature
between 200.degree. C. and 550.degree. C. with the amount of time
for between five seconds and ten hours.
[0075] Process D: there is performed the heat aging precipitation
treatment at the temperature between 400.degree. C. and 650.degree.
C., there is performed the process of cold working with the
reduction in area between 5% and 98%, there is performed the
solution heat treatment at the temperature between 800.degree. C.
and 1000.degree. C., there is performed another heat aging
precipitation treatment at a temperature between 400.degree. C. and
550.degree. C., there is performed the process of cold working with
the reduction in area between 5% and 50%, there is performed the
other heat aging precipitation treatment at the temperature between
400.degree. C. and 650.degree. C., there is performed the process
of finishing cold working with the reduction in area between 5% and
50%, and then there is performed the process of annealing to be
heat treated for refining at the temperature between 200.degree. C.
and 550.degree. C. with the amount of time for between five seconds
and ten hours.
[0076] Moreover, a part of each of the obtained copper alloy
materials is treated as individual sample materials. Further, there
are performed the examination on the characteristics of the yield
strength (YS), the electrical conductivity (EC) and the stress
relaxation rate (SR). Furthermore, there are shown the obtained
results in Table 1-1 and Table 1-2.
TABLE-US-00001 TABLE 1-1 ALLOY CONTENT (mass %) YS EC % SR
IDENTIFICATION NUMBER ELEMENT X ELEMENT Y PROCESS MPa IACS %
PRESENT INVENTION SAMPLE 1-1 2.02Ni 0.60Ti A 710 51.8 15.2 PRESENT
INVENTION SAMPLE 1-2 1.75Fe 0.75Ti B 675 54.2 15.8 PRESENT
INVENTION SAMPLE 1-3 1.62Co, 0.22Cr 0.52Si B 645 56.1 16.2 PRESENT
INVENTION SAMPLE 1-4 1.42Ni, 1.11Co 0.60Si A 725 51.2 15.9 PRESENT
INVENTION SAMPLE 1-5 2.32Ni 0.58Ti, 0.05Zr A 735 50.8 17.0 PRESENT
INVENTION SAMPLE 1-6 1.73Fe, 0.25Cr 0.82Ti A 680 54.1 18.1 PRESENT
INVENTION SAMPLE 1-7 1.55Ni, 1.03Fe 1.24Ti, 0.50Si C 739 50.9 17.0
PRESENT INVENTION SAMPLE 1-8 2.12Ni 0.72Ti, 0.33Si A 640 57.5 15.2
PRESENT INVENTION SAMPLE 1-9 2.15Ni 0.80Ti, 0.59Si C 668 55.1 16.1
PRESENT INVENTION SAMPLE 1-10 1.82Ni, 0.33Cr 0.72Ti, 0.33Si A 679
53.8 15.9 PRESENT INVENTION SAMPLE 1-11 1.38Co 0.44Si, 0.40Ti B 680
57.5 16.3 PRESENT INVENTION SAMPLE 1-12 1.60Co 0.89Si D 685 57.0
17.2 PRESENT INVENTION SAMPLE 1-13 0.33Cr 1.32Ti, 0.38Si A 650 57.5
18.1 PRESENT INVENTION SAMPLE 1-14 1.89Fe 0.66Si D 710 52.0 17.0
PRESENT INVENTION SAMPLE 1-15 0.35Cr 1.05Ti A 635 57.1 16.5 PRESENT
INVENTION SAMPLE 1-16 1.45Co 0.55Si, 0.08Zr B 640 56.8 15.0 PRESENT
INVENTION SAMPLE 1-17 1.85Fe 0.85Si, 0.06Zr B 688 53.4 15.6 PRESENT
INVENTION SAMPLE 1-18 2.05Ni, 0.28Cr 0.12Zr A 635 57.5 16.8 PRESENT
INVENTION SAMPLE 1-19 2.02Fe, 0.30Cr 0.15Zr B 603 59.0 17.0 PRESENT
INVENTION SAMPLE 1-20 0.35Cr 0.10Zr A 605 62.3 17.1 PRESENT
INVENTION SAMPLE 1-21 1.8Co 0.60Si, 0.31Hf A 726 50.3 16.0 PRESENT
INVENTION SAMPLE 1-22 1.51Ni 0.49Ti B 615 55.2 18.2 PRESENT
INVENTION SAMPLE 1-23 2.48Ni, 0.21Cr 0.81Ti B 738 52.1 17.5 PRESENT
INVENTION SAMPLE 1-24 3.21Ni 0.95Ti A 745 50.5 16.5 PRESENT
INVENTION SAMPLE 1-25 0.81Co 0.28Si A 615 62.1 18.5 PRESENT
INVENTION SAMPLE 1-26 1.52Co, 0.22Cr 0.39Si B 641 57.2 17.5 PRESENT
INVENTION SAMPLE 1-27 2.02Co 0.48Si B 681 53.1 18.1 PRESENT
INVENTION SAMPLE 1-28 2.55Co 0.61Si A 690 52.0 18.8 PRESENT
INVENTION SAMPLE 1-29 0.72Ni, 0.65Co 0.36Si A 614 58.2 18.5 PRESENT
INVENTION SAMPLE 1-30 1.02Ni, 0.75Co, 0.45Si A 635 56.2 18.2 0.23Cr
PRESENT INVENTION SAMPLE 1-31 1.41Ni, 1.31Co 0.64Si B 663 52.3 17.2
PRESENT INVENTION SAMPLE 1-32 0.41Ni, 1.41Co, 0.45Si B 671 52.1
16.8 0.10Fe
TABLE-US-00002 TABLE 1-2 ALLOY CONTENT (mass %) YS EC % SR
IDENTIFICATION NUMBER ELEMENT X ELEMENT Y PROCESS MPa IACS %
COMPARATIVE SAMPLE 1-1 0.05Fe, 0.03Cr 0.61Ti A 565 38.0 21.9
COMPARATIVE SAMPLE 1-2 4.12Ni, 1.21Fe 0.66Ti A 640 36.0 18.2
COMPARATIVE SAMPLE 1-3 1.3Co, 0.10Cr 0.005Ti B 515 18.0 26.2
COMPARATIVE SAMPLE 1-4 1.8Ni, 0.3Cr 3.5Ti B 633 27.0 19.3
[0077] As it is obvious according to Table 1-1, the present
invention samples 1-1 through 1-32 are superior in the yield
strength thereof, the electrical conductivity thereof and the yield
stress relaxation characteristic thereof. However, in the case of
the samples that do not satisfy the conditions according to the
present invention as shown in Table 1-2 on the contrary, it is not
able to obtain any aspects that is superior. That is to say, the
comparative sample 1-1 has the density of the precipitate as lower
because of the amount of the element X as lower, and then thereby
the same has the strength, the electrical conductivity and the
yield stress relaxation characteristic as inferior. Moreover, the
comparative sample 1-2 has the electrical conductivity as inferior,
because there becomes to be increased the amount of the atoms
thereof to be solution heated due to the amount of the element X as
larger. Further, the comparative sample 1-3 has the density of the
precipitate as lower because of the amount of the element Y as
lower, and then thereby the same has the strength, the electrical
conductivity and the yield stress relaxation characteristic as
inferior. Furthermore, the comparative sample 1-4 has the
electrical conductivity as inferior, because there becomes to be
increased the amount of the atoms thereof to be solution heated due
to the amount of the element Y as larger.
Example 2
[0078] At first there is performed a mixing of the elements X, the
elements Y and of the elements Z in order to obtain the content and
the composition as shown in the following Table 2-1 and Table 2-2,
in which a remaining portion is comprised of copper and an
unavoidable impurity. And then thereafter there is performed a
production of the copper alloy in accordance with the method for
production as similar to that as described in the above mentioned
Example 1. Moreover, a part of each of the obtained copper alloy
materials thereby is treated as individual sample materials.
Further, there are performed the examination on the characteristics
thereof as similar to that according to the Example 1. The results
are shown in Table 2-1 and Table 2-2.
TABLE-US-00003 TABLE 2-1 IDENTIFICATION ALLOY CONTENT (mass %) YS
EC % SR NUMBER ELEMENT X ELEMENT Y ELEMENT Z PROCESS MPa IACS %
PRESENT INVENTION 2.02Ni 0.60Ti 0.11Mg, 0.15Sn, A 715 51.2 13.2
SAMPLE 2-1 0.31Zn PRESENT INVENTION 1.75Fe 0.75Ti 0.10Mg, 0.22Sn A
681 53.8 12.4 SAMPLE 2-2 PRESENT INVENTION 1.62Co, 0.22Cr 0.52Si
0.15Ag, 0.22Zn C 652 55.8 13.6 SAMPLE 2-3 PRESENT INVENTION 1.42Ni,
1.11Co 0.60Si 0.05Mn, 0.12Mg B 731 51.0 12.3 SAMPLE 2-4 PRESENT
INVENTION 2.32Ni 0.58Ti, 0.05Zr 0.11Mg, 0.15Sn A 738 50.3 12.5
SAMPLE 2-5 PRESENT INVENTION 1.73Fe, 0.25Cr 0.82Ti 0.08P, 0.15Mg B
678 53.5 12.8 SAMPLE 2-6 PRESENT INVENTION 2.15Ni 0.80Ti, 0.59Si
0.05B, 0.12Ag A 668 54.0 13.2 SAMPLE 2-7 PRESENT INVENTION 1.82Ni,
0.33Cr 0.72Ti, 0.33Si 0.14Mg, 0.10Mn, D 679 52.8 13.6 SAMPLE 2-8
0.35Zn PRESENT INVENTION 1.55Ni, 1.03Fe 1.24Ti, 0.50Si 0.15Mg,
0.2Ag C 729 50.3 16.5 SAMPLE 2-9 PRESENT INVENTION 2.12Ni 0.72Ti,
0.33Si 0.14Mg, 0.10Mn, A 650 58.1 15.8 SAMPLE 2-10 0.35Zn PRESENT
INVENTION 1.38Co 0.44Si, 0.40Ti 0.03Mn, 0.12Mg B 675 55.2 15.2
SAMPLE 2-11 PRESENT INVENTION 1.60Co 0.89Si 0.11Mg, 0.15Sn D 681
55.8 16.3 SAMPLE 2-12 PRESENT INVENTION 0.33Cr 1.32Ti, 0.38Si
0.03Mn, 0.12Mg A 644 57.2 17.5 SAMPLE 2-13 PRESENT INVENTION 1.89Fe
0.66Si 0.10Mg, 0.22Sn D 702 51.6 16.2 SAMPLE 2-14 PRESENT INVENTION
0.35Cr 1.05Ti 0.14Mg, 0.10Mn, A 631 56.7 15.8 SAMPLE 2-15 0.35Zn
PRESENT INVENTION 1.45Co 0.55Si, 0.08Zr 0.10Mg, 0.22Sn B 632 56.8
15.8 SAMPLE 2-16 PRESENT INVENTION 1.85Fe 0.85Si, 0.06Zr 0.03Mn,
0.12Mg C 675 53.4 15.6 SAMPLE 2-17 PRESENT INVENTION 2.05Ni, 0.28Cr
0.12Zr 0.15Ag, 0.05B A 642 55.9 16.2 SAMPLE 2-18 PRESENT INVENTION
2.02Fe, 0.30Cr 0.15Zr 0.10Mg, 0.22Sn C 609 58.1 17.6 SAMPLE 2-19
PRESENT INVENTION 0.35Cr 0.10Zr 0.11Mg, 0.15Sn A 615 61.5 16.8
SAMPLE 2-20 PRESENT INVENTION 1.8Co 0.60Si, 0.31Hf 0.15Ag, 0.05B A
731 50.8 16.8 SAMPLE 2-21 PRESENT INVENTION 1.51Ni 0.49Ti 0.03Mn,
0.12Mg D 625 54.2 17.5 SAMPLE 2-22 PRESENT INVENTION 2.48Ni, 0.21Cr
0.81Ti 0.03P, 0.05B B 745 51.5 15.2 SAMPLE 2-23 PRESENT INVENTION
3.21Ni 0.95Ti 0.10Mg, 0.22Sn A 735 51.2 15.8 SAMPLE 2-24 PRESENT
INVENTION 0.81Co 0.28Si 0.15Ag, 0.05B A 625 61.1 15.1 SAMPLE 2-25
PRESENT INVENTION 1.52Co, 0.22Cr 0.39Si 0.11Mg, 0.15Sn, B 638 56.2
15.5 SAMPLE 2-26 0.31Zn PRESENT INVENTION 2.02Co, 0.11Fe 0.48Si
0.03Mn, 0.12Mg B 672 52.4 16.7 SAMPLE 2-27 PRESENT INVENTION 2.55Co
0.61Si 0.15Ag, 0.05B A 680 51.1 16.6 SAMPLE 2-28 PRESENT INVENTION
0.72Ni, 0.65Co 0.36Si 0.11Mg, 0.15Sn C 625 58.2 17.5 SAMPLE 2-29
PRESENT INVENTION 1.02Ni, 0.75Co, 0.45Si 0.14Mg, 0.10Mn, A 625 56.3
17.6 SAMPLE 2-30 0.23Cr 0.35Zn PRESENT INVENTION 1.41Ni, 1.31Co
0.64Si 0.03P, 0.05B D 671 52.1 17.8 SAMPLE 2-31 PRESENT INVENTION
0.41Ni, 1.41Co, 0.45Si 0.03Mn, 0.12Mg B 685 51.7 17.0 SAMPLE 2-32
0.10Fe
TABLE-US-00004 TABLE 2-2 IDENTIFICATION ALLOY CONTENT (mass %) YS
EC % SR NUMBER ELEMENT X ELEMENT Y ELEMENT Z PROCESS MPa IACS %
COMPARATIVE 2.02Ni 0.60Ti 2.21Sn, 1.03Mg A 730 27.2 13.6 SAMPLE 2-1
COMPARATIVE 1.75Fe 0.75Ti 5.14Zn, 0.10Sn B 721 32.1 12.8 SAMPLE 2-2
COMPARATIVE 1.62Co, 0.22Cr 0.52Si 2.5Mn, 0.58P A 702 28.1 14.0
SAMPLE 2-3
[0079] As it is obvious according to Table 2-1, the present
invention samples 2-1 through 2-32 are superior in the yield
strength thereof, the electrical conductivity thereof and the yield
stress relaxation characteristic thereof. However, in the case of
the samples that do not satisfy the specified values regarding the
conditions for each of the ingredient amounts according to the
present invention as shown in Table 2-2 on the contrary, it is not
able to obtain superior aspects. That is to say, the comparative
samples 2-1 to 2-3 individually have the electrical conductivities
as too inferior, due to the individual amounts of the elements Z in
each thereof as excessively larger.
Example 3
[0080] At first there is performed a mixing of the elements X, the
elements Y and of the elements Z in order to obtain the content and
the composition as shown in the following Table 3-1 and Table 3-2,
in which a remaining portion is comprised of copper and an
unavoidable impurity. And then thereafter there is performed a
production of the copper alloy in accordance with the method for
production as similar to that as described in the above mentioned
Example 1. Moreover, a part of each of the obtained copper alloy
materials thereby is treated as individual sample materials.
Further, there are performed the solution heat treatment for the
comparative samples 3-1 to 3-3 at a temperature thereof as
approximately between 20.degree. C. and 30.degree. C. higher than
that for each of the process of production according to the
individual present invention samples 3-1 to 3-3 respectively.
[0081] Still further, there are performed the examination on the
characteristics of the average crystalline grain diameter (GS) and
the bending workability (R/t) thereof regarding each of the sample
materials, in addition to that of the yield strength (YS), the
electrical conductivity (EC) and the stress relaxation rate (SR)
thereof as similar to that according to Example 1. Furthermore,
there are shown the obtained results in Table 3-1 and Table
3-2.
TABLE-US-00005 TABLE 3-1 IDENTIFICATION ALLOY CONTENT (mass %) YS
EC % SR GS R/t NUMBER ELEMENT X ELEMENT Y ELEMENT Z PROCESS MPa
IACS % .mu.m GW BW PRESENT 2.02Ni 0.60Ti 0.11Mg, 0.15Sn, A 715 51.2
13.2 7.2 0.8 1.2 INVENTION 0.31Zn SAMPLE 3-1 PRESENT 1.75Fe 0.75Ti
0.10Mg, 0.22Sn A 681 53.8 12.4 6.8 0.6 1 INVENTION SAMPLE 3-2
PRESENT 1.62Co, 0.22Cr 0.52Si 0.15Ag, 0.22Zn C 652 55.8 13.6 4.5
0.4 0.6 INVENTION SAMPLE 3-3 PRESENT 1.42Ni, 1.11Co 0.60Si 0.05Mn,
0.12Mg B 731 51.0 12.3 7.2 0.8 1.2 INVENTION SAMPLE 3-4 PRESENT
2.32Ni 0.58Ti, 0.05Zr 0.11Mg, 0.15Sn, A 738 50.3 12.5 7.8 1 1.4
INVENTION 0.50Zn SAMPLE 3-5 PRESENT 1.73Fe, 0.25Cr 0.82Ti 0.08P,
0.15Mg B 678 53.5 12.8 6.8 0.6 0.6 INVENTION SAMPLE 3-6 PRESENT
2.15Ni 0.80Ti, 0.59Si 0.05B, 0.12Ag A 668 54.0 13.2 6.2 0.4 0.6
INVENTION SAMPLE 3-7 PRESENT 1.82Ni, 0.33Cr 0.72Ti, 0.33Si 0.14Mg,
0.10Mn, D 679 52.8 13.6 5.0 0.2 0.4 INVENTION 0.35Zn SAMPLE 3-8
PRESENT 1.55Ni, 1.03Fe 1.24Ti, 0.50Si 0.15Mg, 0.2Ag C 729 50.3 16.5
8.6 0.8 1.2 INVENTION SAMPLE 3-9 PRESENT 2.12Ni 0.72Ti, 0.33Si
0.14Mg, 0.10Mn, A 650 58.1 15.8 6.2 0.4 0.6 INVENTION 0.35Zn SAMPLE
3-10 PRESENT 1.38Co 0.44Si, 0.40Ti 0.03Mn, 0.12Mg B 675 55.2 15.2
5.9 0.6 1.0 INVENTION SAMPLE 3-11 PRESENT 1.60Co 0.89Si 0.11Mg,
0.15Sn D 681 55.8 16.3 6.7 0.6 1.0 INVENTION SAMPLE 3-12 PRESENT
0.33Cr 1.32Ti, 0.38Si 0.03Mn, 0.12Mg A 644 57.2 17.5 8.6 0.4 0.6
INVENTION SAMPLE 3-13 PRESENT 1.89Fe 0.66Si 0.10Mg, 0.22Sn D 702
51.6 16.2 5.7 0.8 1.2 INVENTION SAMPLE 3-14 PRESENT 0.35Cr 1.05Ti
0.14Mg, 0.10Mn, A 631 56.7 15.8 8.5 0.4 0.6 INVENTION 0.35Zn SAMPLE
3-15 PRESENT 1.45Co 0.55Si, 0.08Zr 0.10Mg, 0.22Sn B 632 56.8 15.8
7.6 0.4 0.6 INVENTION SAMPLE 3-16 PRESENT 1.85Fe 0.85Si, 0.06Zr
0.03Mn, 0.12Mg C 675 53.4 15.6 6.8 0.6 1.0 INVENTION SAMPLE 3-17
PRESENT 2.05Ni, 0.28Cr 0.12Zr 0.15Ag, 0.05B A 642 55.9 16.2 7.8 0.4
0.6 INVENTION SAMPLE 3-18 PRESENT 2.02Fe, 0.30Cr 0.15Zr 0.10Mg,
0.22Sn C 609 58.1 17.6 6.7 0.4 0.6 INVENTION SAMPLE 3-19 PRESENT
0.35Cr 0.10Zr 0.11Mg, 0.15Sn A 615 61.5 16.8 5.8 0.4 0.6 INVENTION
SAMPLE 3-20 PRESENT 1.8Co 0.60Si, 0.31Hf 0.15Ag, 0.05B A 731 50.8
16.8 5.5 0.8 1.2 INVENTION SAMPLE 3-21 PRESENT 1.51Ni 0.49Ti
0.03Mn, 0.12Mg D 625 54.2 17.5 8.7 0.4 0.6 INVENTION SAMPLE 3-22
PRESENT 2.48Ni, 0.21Cr 0.81Ti 0.03P, 0.05B B 745 51.5 15.2 5.9 0.8
1.2 INVENTION SAMPLE 3-23 PRESENT 3.21Ni 0.95Ti 0.10Mg, 0.22Sn A
735 51.2 15.8 6.7 0.8 1.2 INVENTION SAMPLE 3-24 PRESENT 0.81Co
0.28Si 0.15Ag, 0.05B A 625 61.1 15.1 8.5 0.4 0.6 INVENTION SAMPLE
3-25 PRESENT 1.52Co, 0.22Cr 0.39Si 0.11Mg, 0.15Sn, B 638 56.2 15.5
6.7 0.4 0.6 INVENTION 0.31Zn SAMPLE 3-26 PRESENT 2.02Co, 0.11Fe
0.48Si 0.03Mn, 0.12Mg B 672 52.4 16.7 7.8 0.6 1.0 INVENTION SAMPLE
3-27 PRESENT 2.55Co 0.61Si 0.15Ag, 0.05B A 680 51.1 16.6 8.6 0.6
1.0 INVENTION SAMPLE 3-28 PRESENT 0.72Ni, 0.65Co 0.36Si 0.11Mg,
0.15Sn C 625 58.2 17.5 7.8 0.4 0.6 INVENTION SAMPLE 3-29 PRESENT
1.02Ni, 0.75Co, 0.45Si 0.14Mg, 0.10Mn, A 625 56.3 17.6 7.6 0.4 0.6
INVENTION 0.35Zn SAMPLE 3-30 PRESENT 1.41Ni, 1.31Co 0.64Si 0.03P,
0.05B D 671 52.1 17.8 7.8 0.6 1.0 INVENTION SAMPLE 3-31 PRESENT
0.41Ni, 1.41Co, 0.45Si 0.03Mn, 0.12Mg B 685 51.7 17.0 8.6 0.6 1.0
INVENTION SAMPLE 3-32 indicates data missing or illegible when
filed
TABLE-US-00006 TABLE 3-2 IDENTIFICATION ALLOY CONTENT (mass %) YS
EC % SR GS R/t NUMBER ELEMENT X ELEMENT Y ELEMENT Z PROCESS MPa
IACS % .mu.m GW BW COMPARATIVE 2.02Ni 0.60Ti 0.11Mg, A 725 50.1
12.5 15.2 2 2.2 SAMPLE 3-1 0.15Sn, 0.31Zn COMPARATIVE 1.75Fe 0.75Ti
0.10Mg, A 698 51.2 11.8 16.8 2 2.4 SAMPLE 3-2 0.22Sn COMPARATIVE
1.62Co, 0.52Si 0.15Ag, C 680 52.5 13.0 13.9 2.2 2.2 SAMPLE 3-3
0.22Cr 0.22Zn
[0082] As it is obvious according to Table 3-1, the present
invention samples 3-1 through 3-32 are superior in the yield
strength thereof, the electrical conductivity thereof and the yield
stress relaxation characteristic thereof. However, in the case of
the comparative samples 3-1 to 3-3 as shown in Table 3-2 that
individually have the temperatures regarding the solution heat
treatment as higher respectively, the sample materials individually
have the crystalline grain diameters as larger than 10 .mu.m
respectively, and then that are inferior in the bending
workability.
Example 4
[0083] At first there is performed a mixing of the elements X, the
elements Y and of the elements Z in order to obtain the content and
the composition as shown in the following Table 4-1 and Table 4-2,
in which a remaining portion is comprised of copper and an
unavoidable impurity. And then thereafter there is performed a
production of the copper alloy in accordance with the method for
production as similar to that as described in the above mentioned
Example 1. Moreover, a part of each of the obtained copper alloy
materials thereby is treated as individual sample materials.
Further, there are performed the solution heat treatment for the
comparative samples 4-1 to 4-3 approximately at a temperature of
1200.degree. C. for ten minutes respectively.
[0084] Still further, there are performed the examination on the
characteristics of the constituent elements and the particle
density thereof that individually have the particle diameters
between 50 nm and 1000 nm and that comprise the second phase
regarding each of the sample materials, in addition to that of the
yield strength (YS), the electrical conductivity (EC), the stress
relaxation rate (SR), the average crystalline grain diameter (GS)
and the bending workability (R/t) thereof as similar to that
according to Example 3. Still further, there are shown the obtained
results in Table 4-1 and Table 4-2. Furthermore, the symbol 10 n
designates 10n in the tables (as similar in the tables
hereafter).
TABLE-US-00007 TABLE 4-1 THE SECOND PHASE ALLOY CONTENT (mass %)
DENSITY IDENTIFICATION ELE- ELE- ELE- YS EC % SR GS R/t (pieces
CONSTITUENT NUMBER MENT X MENT Y MENT Z PROCESS MPa IACS % .mu.m GW
BW per mm{circumflex over ( )}2) ELEMENT PRESENT 2.02Ni, 0.60Ti
0.11Mg, A 715 51.2 13.2 7.2 0.8 1.2 8 .times. 10{circumflex over (
)}6 Ni, Ti, Cr INVENTION 0.25Cr 0.15Sn, SAMPLE 4-1 0.31Zn PRESENT
1.75Fe 0.75Ti 0.10Mg, A 681 53.8 12.4 6.8 0.6 1 7 .times.
10{circumflex over ( )}6 Fe, Ti, Cr INVENTION 0.33Cr 0.22Sn SAMPLE
4-2 PRESENT 1.62Co, 0.52Si 0.15Ag, C 652 55.8 13.6 4.5 0.4 0.6 8
.times. 10{circumflex over ( )}6 Co, Cr, Si INVENTION 0.22Cr 0.22Zn
SAMPLE 4-3 PRESENT 1.42Ni, 0.60Si 0.05Mn, B 731 51.0 12.3 7.2 0.8
1.2 6 .times. 10{circumflex over ( )}6 Ni, Co, Si INVENTION 1.11Co
0.12Mg SAMPLE 4-4 PRESENT 2.32Ni 0.58Ti, 0.11Mg, A 738 50.3 12.5
7.8 1 1.4 7 .times. 10{circumflex over ( )}6 Ni, Ti, Zr INVENTION
0.05Zr 0.15Sn, SAMPLE 4-5 0.50Zn PRESENT 1.73Fe, 0.82Ti 0.08P, B
678 53.5 12.8 6.8 0.6 0.6 8 .times. 10{circumflex over ( )}6 Fe,
Ti, Cr INVENTION 0.25Cr 0.15Mg SAMPLE 4-6 PRESENT 2.15Ni 0.80Ti,
0.05B, A 668 54.0 13.2 6.2 0.4 0.6 6 .times. 10{circumflex over (
)}6 Ni, Ti, Si INVENTION 0.59Si 0.12Ag SAMPLE 4-7 PRESENT 1.82Ni,
0.72Ti, 0.14Mg, D 679 52.8 13.6 5.0 0.2 0.4 6 .times. 10{circumflex
over ( )}6 Cr, Ni, Si INVENTION 0.33Cr 0.33Si 0.10Mn, SAMPLE 4-8
0.35Zn PRESENT 1.55Ni, 1.24Ti, 0.15Mg, C 729 50.3 16.5 8.6 0.8 1.2
8 .times. 10{circumflex over ( )}6 Ni, Ti, Si INVENTION 1.03Fe
0.50Si 0.2Ag SAMPLE 4-9 PRESENT 2.12Ni 0.72Ti, 0.14Mg, A 650 58.1
15.8 6.2 0.4 0.6 6 .times. 10{circumflex over ( )}6 Ni, Ti, Si
INVENTION 0.33Si 0.10Mn, SAMPLE 4-10 0.35Zn PRESENT 1.38Co 0.44Si,
0.03Mn, B 675 55.2 15.2 5.9 0.6 1.0 7 .times. 10{circumflex over (
)}6 Co, Si, Ti INVENTION 0.40Ti 0.12Mg SAMPLE 4-11 PRESENT 1.60Co
0.89Si 0.11Mg, D 681 55.8 16.3 6.7 0.6 1.0 8 .times. 10{circumflex
over ( )}6 Co, Si INVENTION 0.15Sn SAMPLE 4-12 PRESENT 0.33Cr
1.32Ti, 0.03Mn, A 644 57.2 17.5 8.6 0.4 0.6 6 .times. 10{circumflex
over ( )}6 Cr, Si INVENTION 0.38Si 0.12Mg SAMPLE 4-13 PRESENT
1.89Fe 0.66Si 0.10Mg, D 702 51.6 16.2 5.7 0.8 1.2 8 .times.
10{circumflex over ( )}6 Fe, Si INVENTION 0.22Sn SAMPLE 4-14
PRESENT 0.35Cr 1.05Ti 0.14Mg, A 631 56.7 15.8 8.5 0.4 0.6 6 .times.
10{circumflex over ( )}6 Cr, Ti INVENTION 0.10Mn, SAMPLE 4-15
0.35Zn PRESENT 1.45Co 0.55Si, 0.10Mg, B 632 56.8 15.8 7.6 0.4 0.6 8
.times. 10{circumflex over ( )}6 Co, Si, Zr INVENTION 0.08Zr 0.22Sn
SAMPLE 4-16 PRESENT 1.85Fe 0.85Si, 0.03Mn, C 675 53.4 15.6 6.8 0.6
1.0 6 .times. 10{circumflex over ( )}6 Fe, Si, Zr INVENTION 0.06Zr
0.12Mg SAMPLE 4-17 PRESENT 2.05Ni, 0.12Zr 0.15Ag, A 642 55.9 16.2
7.8 0.4 0.6 7 .times. 10{circumflex over ( )}6 Zr INVENTION 0.28Cr
0.05B SAMPLE 4-18 PRESENT 2.02Fe, 0.15Zr 0.10Mg, C 609 58.1 17.6
6.7 0.4 0.6 8 .times. 10{circumflex over ( )}6 Zr INVENTION 0.30Cr
0.22Sn SAMPLE 4-19 PRESENT 0.35Cr 0.10Zr 0.11Mg, A 615 61.5 16.8
5.8 0.4 0.6 6 .times. 10{circumflex over ( )}6 Cr, Zr INVENTION
0.15Sn SAMPLE 4-20 PRESENT 1.8Co 0.60Si, 0.15Ag, A 731 50.8 16.8
5.5 0.8 1.2 8 .times. 10{circumflex over ( )}6 Co, Si INVENTION
0.31Hf 0.05B SAMPLE 4-21 PRESENT 1.51Ni 0.49Ti 0.03Mn, D 625 54.2
17.5 8.7 0.4 0.6 6 .times. 10{circumflex over ( )}6 Ni, Ti
INVENTION 0.12Mg SAMPLE 4-22 PRESENT 2.48Ni, 0.81Ti 0.03P, B 745
51.5 15.2 5.9 0.8 1.2 8 .times. 10{circumflex over ( )}6 Ni, Cr, Ti
INVENTION 0.21Cr 0.05B SAMPLE 4-23 PRESENT 3.21Ni 0.95Ti 0.10Mg, A
735 51.2 15.8 6.7 0.8 1.2 6 .times. 10{circumflex over ( )}6 Ni, Ti
INVENTION 0.22Sn SAMPLE 4-24 PRESENT 0.81Co 0.28Si 0.15Ag, A 625
61.1 15.1 8.5 0.4 0.6 7 .times. 10{circumflex over ( )}6 Co, Si
INVENTION 0.05B SAMPLE 4-25 PRESENT 1.52Co, 0.39Si 0.11Mg, B 638
56.2 15.5 6.7 0.4 0.6 8 .times. 10{circumflex over ( )}6 Co, Cr, Si
INVENTION 0.22Cr 0.15Sn, SAMPLE 4-26 0.31Zn PRESENT 2.02Co, 0.48Si
0.03Mn, B 672 52.4 16.7 7.8 0.6 1.0 7 .times. 10{circumflex over (
)}6 Co, Si INVENTION 0.11Fe 0.12Mg SAMPLE 4-27 PRESENT 2.55Co
0.61Si 0.15Ag, A 680 51.1 16.6 8.6 0.6 1.0 8 .times. 10{circumflex
over ( )}6 Co, Si INVENTION 0.05B SAMPLE 4-28 PRESENT 0.72Ni,
0.36Si 0.11Mg, C 625 58.2 17.5 7.8 0.4 0.6 8 .times. 10{circumflex
over ( )}6 Ni, Co, Si INVENTION 0.65Co 0.15Sn SAMPLE 4-29 PRESENT
1.02Ni, 0.45Si 0.14Mg, A 625 56.3 17.6 7.6 0.4 0.6 6 .times.
10{circumflex over ( )}6 Cr, Si INVENTION 0.75Co, 0.10Mn, SAMPLE
4-30 0.23Cr 0.35Zn PRESENT 1.41Ni, 0.64Si 0.03P, D 671 52.1 17.8
7.8 0.6 1.0 7 .times. 10{circumflex over ( )}6 Ni, Co, Si INVENTION
1.31Co 0.05B SAMPLE 4-31 PRESENT 0.41Ni, 0.45Si 0.03Mn, B 685 51.7
17.0 8.6 0.6 1.0 8 .times. 10{circumflex over ( )}6 Ni, Co, Si
INVENTION 1.41Co, 0.12Mg SAMPLE 4-32 0.10Fe
TABLE-US-00008 TABLE 4-2 THE SECOND PHASE ALLOY CONTENT (mass %)
DENSITY IDENTIFICATION ELE- ELE- ELE- YS EC % SR GS R/t (pieces
CONSTITUENT NUMBER MENT X MENT Y MENT Z PROCESS MPa IACS % .mu.m GW
BW per mm{circumflex over ( )}2) ELEMENT COMPARATIVE 2.02Ni 0.60Ti
0.11Mg, A 725 50.1 13.2 15.2 2.4 2.8 3 .times. 10{circumflex over (
)}3 Ni, Ti SAMPLE 4-1 0.15Sn, 0.31Zn COMPARATIVE 1.75Fe 0.75Ti
0.10Mg, B 698 51.2 12.4 16.8 2.4 3 2 .times. 10{circumflex over (
)}3 Fe, Ti SAMPLE 4-2 0.22Sn COMPARATIVE 1.62Co, 0.52Si 0.15Ag, A
680 52.5 13.6 13.9 2.4 2.8 5 .times. 10{circumflex over ( )}3 Co,
Si SAMPLE 4-3 0.22Cr 0.22Zn
[0085] As obvious in Table 4-1, the present invention samples 4-1
through 4-32 are superior in the yield strength thereof, the
electrical conductivity thereof, the yield stress relaxation
characteristic thereof and the bending workability thereof.
However, in the case of the comparative samples 4-1 to 4-3 as shown
in Table 4-2 that individually have the particle densities of the
second phases as lower respectively, the sample materials
individually have the crystalline grain diameters as larger than 10
.mu.m respectively, and then thereby that are inferior in the
bending workability on the contrary.
Example 5
[0086] At first, the elements are mixed to obtain the content and
the composition as shown in Table 5-1. Moreover, there is performed
a dissolution thereafter for an alloy by making use of the high
frequency melting furnace, in which a remaining portion is
comprised of copper and an unavoidable impurity. And hence there is
obtained an ingot by casting the same with the cooling rate between
0.1.degree. C. per second and 100.degree. C. per second. Further,
there is performed the process of treating with heat for
homogenizing the same at between 900.degree. C. and 1050.degree. C.
for between a half hour and ten hours. And then thereafter there is
performed the process of hot working for the same with the
reduction in area of not less than 50% at the processing
temperature of not lower than 650.degree. C. Still further, there
is performed thereafter the water quenching, and then there is
performed the facing in order to remove an oxidizing scale thereon.
Still further, the process of cold working is performed with the
reduction in area between 50% and 98%, there is performed the
solution heat treatment at the temperature between 800.degree. C.
and 1000.degree. C., another process of cold working is performed
with a reduction in area of R1% in the table, there is performed
the heat aging precipitation treatment at the temperature between
400.degree. C. and 650.degree. C., a process of finishing cold
working is performed with a reduction in area of R2% in the table,
and the process of annealing to be heat treated for refining is
performed at the temperature between 200.degree. C. and 450.degree.
C. with the amount of time for between five seconds and ten hours.
The copper alloy materials is produced, and then a part of each of
the obtained copper alloy materials thereby is treated as
individual sample materials. Furthermore, there are shown the
obtained results in Table 5-2 and Table 5-3.
TABLE-US-00009 TABLE 5-1 ELEMENT Ni Ti Si Cr Sn Zn Mg Cu mass %
2.02 0.6 0.35 0.2 0.1 0.3 0.1 REMAINING
TABLE-US-00010 TABLE 5-2 THE SECOND PHASE IDENTIFICATION R1 R2 YS
EC % SR GS R/t CONSTITUENT NUMBER % % MPa IACS % .mu.m GW BW
DENSITY ELEMENT PRESENT INVENTION 25 15 738 51.5 13.2 7.2 0.8 1.2 7
.times. 10{circumflex over ( )}6 Ni, Ti, Cr, Si SAMPLE 5-1 PRESENT
INVENTION 35 10 705 53.2 12.4 8.2 0.6 1 7 .times. 10{circumflex
over ( )}6 Ni, Ti, Cr, Si SAMPLE 5-2 PRESENT INVENTION 30 12 720
55.5 13.6 7.6 0.4 0.6 7 .times. 10{circumflex over ( )}6 Ni, Ti,
Cr, Si SAMPLE 5-3
TABLE-US-00011 TABLE 5-3 THE SECOND PHASE IDENTIFICATION R1 R2 YS
EC % SR GS R/t CONSTITUENT NUMBER % % MPa IACS % .mu.m GW BW
DENSITY ELEMENT COMPARATIVE 0 3 522 48.2 18.3 8.4 0.2 0 7 .times.
10{circumflex over ( )}6 Ni, Ti, Cr, Si SAMPLE 5-1 COMPARATIVE 50
25 745 51.2 23.3 8.5 2.4 3 7 .times. 10{circumflex over ( )}6 Ni,
Ti, Cr, Si SAMPLE 5-2
[0087] As it is obvious according to Table 5-2, the present
invention samples 5-1 through 5-3 are superior in the yield
strength thereof, the electrical conductivity thereof, the yield
stress relaxation characteristic thereof and the bending
workability thereof. On the contrary it is not desirable in the
case of such as shown in the comparative samples 5-1 due to the
strength thereof as lower, of which the sum of the R1 and R2 is
lower than 5%. Moreover, it is not desirable either in the case of
such as shown in the comparative samples 5-2 of which the sum of
the R1 and R2 is larger than 65%, because that is inferior in the
yield stress relaxation characteristic and in the bending
workability.
Example 6
[0088] At first, the elements are mixed to obtain compositions as
shown in Table 5-1 according to Example 5. Moreover, an alloy is
melt in a high frequency melting furnace, so that a remaining
portion is comprised of copper and an unavoidable impurity. The
alloy is cast to obtain an ingot with the cooling rate between
0.1.degree. C. and 100.degree. C. per second. Further, there is
performed the process of treating with heat for homogenizing the
same at between 900.degree. C. and 1050.degree. C. for between a
half hour and ten hours. And then thereafter there is performed the
process of hot working for the same with the reduction in area of
not less than 50% at the processing temperature of not lower than
650.degree. C. Still further, there is performed thereafter the
water quenching, and then there is performed the facing in order to
remove an oxidizing scale thereon. Still further, there is
performed the process of cold working with the reduction in area
between 50% and 98%, there is performed the solution heat treatment
at the temperature between 800.degree. C. and 1000.degree. C.,
there is performed a heat aging precipitation treatment at the
temperature of T8.degree. C. as shown in Table 6-1 and Table 6-2
with an amount of time for four hours, there is performed another
process of cold working with the reduction in area between 5% and
50%, there is performed another heat aging precipitation treatment
at the temperature of T10.degree. C. as shown in the tables with
the amount of time for four hours, there is performed a process of
finishing cold working with the reduction in area between 5% and
50%, and then there is performed the process of annealing to be
heat treated for refining at the temperature between 200.degree. C.
and 450.degree. C. with the amount of time for between five seconds
and ten hours. Accordingly, the copper alloy materials are
obtained, and then a part of each of the obtained copper alloy
materials is treated as individual sample materials.
[0089] Still further, the characteristics of the yield strength
(YS), the electrical conductivity (EC), the stress relaxation rate
(SR), the average crystalline grain diameter (GS), the bending
workability (R/t), the constituent elements of the second phase,
the particle density thereof, or the like are examined regarding
each of the sample materials similar to the above mentioned
examples. Furthermore, there are shown the obtained results in
Table 6-1 and Table 6-2.
TABLE-US-00012 TABLE 6-1 THE SECOND PHASE IDENTIFICATION T8 T10 YS
EC % SR GS R/t CONSTITUENT NUMBER .degree. C. .degree. C. MPa IACS
% .mu.m GW BW DENSITY ELEMENT PRESENT INVENTION 570 550 720 54.5
13.2 7.2 0.8 1.2 7 .times. 10{circumflex over ( )}6 Ni, Ti, Cr, Si
SAMPLE 6-1 PRESENT INVENTION 580 560 705 52.5 12.4 8.2 0.6 1 7
.times. 10{circumflex over ( )}6 Ni, Ti, Cr, Si SAMPLE 6-2
TABLE-US-00013 TABLE 6-2 THE SECOND PHASE IDENTIFICATION T8 T10 YS
EC % SR GS R/t CONSTITUENT NUMBER .degree. C. .degree. C. MPa IACS
% .mu.m GW BW DENSITY ELEMENT COMPARATIVE 520 560 584 55.0 17.5 7.2
0.8 1.2 7 .times. 10{circumflex over ( )}6 Ni, Ti, Cr, Si SAMPLE
6-1 COMPARATIVE 540 600 562 57.0 18.9 8.2 0.6 1 7 .times.
10{circumflex over ( )}6 Ni, Ti, Cr, Si SAMPLE 6-2
[0090] As it is obvious according to Table 6-1, the present
invention samples 6-1 and 6-2 are superior in the yield strength
thereof, the electrical conductivity thereof, the yield stress
relaxation characteristic thereof and the bending workability
thereof. On the contrary, it becomes clear that it is not desirable
in the case of the comparative samples 6-1 and the comparative
samples 6-2 as shown in Table 6-2 that individually have the T10 as
higher than the T8 as the temperature of the heat aging
precipitation treatment respectively, because the function of the
precipitation hardening thereby is not sufficient, and then because
the strength thereof becomes lower.
Example 7
[0091] At first there is performed a mixing of the elements in
order to obtain the content and the composition as shown in the
Table 5-1 according to Example 5 as similar. Moreover, there is
performed a dissolution thereafter for an alloy by making use of
the high frequency melting furnace, in which a remaining portion is
comprised of copper and an unavoidable impurity. And hence there is
obtained an ingot by casting the same with the cooling rate between
0.1.degree. C. per second and 100.degree. C. per second. Further,
there is performed the process of treating with heat for
homogenizing the same at between 900.degree. C. and 1050.degree. C.
for between a half hour and ten hours. And then thereafter there is
performed the process of hot working for the same with the
reduction in area of not less than 50% at the processing
temperature of not lower than 650.degree. C. Still further, there
is performed thereafter the water quenching, and then there is
performed the facing in order to remove an oxidizing scale thereon.
Still further, there is performed a heat aging precipitation
treatment at the temperature of T5.degree. C. as shown in Table 7
for four hours, there is performed the process of cold working with
the reduction in area between 50% and 98%, there is performed the
solution heat treatment at the temperature between 800.degree. C.
and 1000.degree. C., there is performed the other process of cold
working with the reduction in area between 5% and 50%, there is
performed another heat aging precipitation treatment at a
temperature between 400.degree. C. and 650.degree. C., there is
performed the process of finishing cold working with the reduction
in area between 5% and 50%, and then there is performed a process
of annealing to be heat treated for refining at a temperature
between 200.degree. C. and 550.degree. C. with the amount of time
for between five seconds and ten hours. The copper alloy materials
are produced, and then a part of each of the obtained copper alloy
materials is treated as individual sample materials.
[0092] Still further, there are performed the examination on the
characteristics of the yield strength (YS), the electrical
conductivity (EC), the stress relaxation rate (SR), the average
crystalline grain diameter (GS), the bending workability (R/t), the
constituent elements of the second phase, the particle density
thereof, or the like, regarding each of the sample materials as
similar to that according to the above mentioned examples.
Furthermore, there are shown the obtained results in Table 7.
TABLE-US-00014 TABLE 7 THE SECOND PHASE IDENTIFICATION T5 YS EC %
SR GS R/t CONSTITUENT NUMBER .degree. C. MPa IACS % .mu.m GW BW
DENSITY ELEMENT PRESENT INVENTION 570 752 54.5 12.5 4.5 0.8 1.2 8
.times. 10{circumflex over ( )}6 Ni, Ti, Cr, Si SAMPLE 7-1 PRESENT
INVENTION 585 736 55.2 13.9 3.6 0.6 1 8 .times. 10{circumflex over
( )}6 Ni, Ti, Cr, Si SAMPLE 7-2 PRESENT INVENTION 385 715 55.2 13.7
8.2 1.2 1.4 3 .times. 10{circumflex over ( )}5 Ni, Ti, Cr, Si
SAMPLE 7-3 PRESENT INVENTION 810 702 55.1 13.8 7.8 1 0.8 2 .times.
10{circumflex over ( )}5 Ni, Ti, Cr, Si SAMPLE 7-4
[0093] As shown in Table 7, it becomes able to obtain the density
of the second phase as higher, to design the crystalline grain
diameter thereof as smaller, and then to obtain the bending
workability thereof as further excellently, in the case of
performing the heat aging precipitation treatment (5) at the
temperature between 400.degree. C. and 800.degree. C.
INDUSTRIAL APPLICABILITY
[0094] According to the present invention, the copper alloy
material is applicable to a lead frame for an electrical and
electronic device, a connector, a material for a terminal, or the
like, and more specifically to such as a connector or a material
for a terminal to be made use for such as mounting on a motor
vehicle, a relay, a switch, a socket, or the like.
[0095] In the embodiments described above, the present invention
will not be limited to every detail of the description as far as a
particular designation, and it should be interpreted widely without
departing from the scope of the present invention as disclosed in
the attached claims.
[0096] Furthermore, the present invention claims the priority based
on Japanese Patent Application No. 2007-086026, that is patent
applied in Japan on the twenty-eighth day of March 2007, and on
Japanese Patent Application No. 2008-085013, that is patent applied
in Japan on the twenty-seventh day of March 2008, and the entire
contents of which are expressly incorporated herein by
reference.
* * * * *