U.S. patent application number 12/633849 was filed with the patent office on 2010-06-10 for substrate treatment apparatus.
This patent application is currently assigned to JUSUNG ENGINEERING CO., LTD.. Invention is credited to Ho-Chul KANG.
Application Number | 20100139562 12/633849 |
Document ID | / |
Family ID | 42229631 |
Filed Date | 2010-06-10 |
United States Patent
Application |
20100139562 |
Kind Code |
A1 |
KANG; Ho-Chul |
June 10, 2010 |
SUBSTRATE TREATMENT APPARATUS
Abstract
A substrate treatment apparatus includes a chamber providing a
reaction region and including first and second sides facing each
other, a module connected to the first side, an upper electrode in
the reaction region, a substrate holder facing the upper electrode,
wherein a substrate is disposed on the substrate holder, and first
and second points are defined on the substrate, wherein the first
point corresponds to a center of the substrate, and the second
point is distant from the first point toward the first side, and a
feeding line for applying an RF power, the feeding line connected
to the upper electrode corresponding to the second point.
Inventors: |
KANG; Ho-Chul; (Gyeonggi-do,
KR) |
Correspondence
Address: |
HOSOON LEE
9600 SW OAK ST. SUITE 525
TIGARD
OR
97223
US
|
Assignee: |
JUSUNG ENGINEERING CO.,
LTD.
Gyeonggi-do
KR
|
Family ID: |
42229631 |
Appl. No.: |
12/633849 |
Filed: |
December 9, 2009 |
Current U.S.
Class: |
118/723E |
Current CPC
Class: |
C23C 16/5096 20130101;
H01J 37/32091 20130101; H01J 37/32577 20130101; H01J 37/04
20130101 |
Class at
Publication: |
118/723.E |
International
Class: |
C23C 16/00 20060101
C23C016/00 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 10, 2008 |
KR |
10-2008-0125507 |
Sep 30, 2009 |
KR |
10-2009-0093151 |
Claims
1. A substrate treatment apparatus, comprising: a chamber providing
a reaction region and including first and second sides facing each
other; a module connected to the first side; an upper electrode in
the reaction region; a substrate holder facing the upper electrode,
wherein a substrate is disposed on the substrate holder, and first
and second points are defined on the substrate, wherein the first
point corresponds to a center of the substrate, and the second
point is distant from the first point toward the first side; and a
feeding line for applying an RF power, the feeding line connected
to the upper electrode corresponding to the second point.
2. The apparatus according to claim 1, wherein a substrate entrance
for carrying the substrate into and out of the chamber is set up at
the first side, and a slot valve is set up between the module and
the substrate entrance.
3. The apparatus according to claim 1, wherein the substrate is a
rectangle having a length and a width shorter than the length, and
the distance between the first point and the second point is within
a range of 2% to 5% of the length of the substrate.
4. The apparatus according to claim 1, wherein the substrate is a
rectangle having a length and a width shorter than the length, and
the distance between the first point and the second point is within
a range of 2.5% to 4% of the length of the substrate.
5. The apparatus according to claim 1, wherein the substrate is a
rectangle having a length and a width shorter than the length, and
the substrate is asymmetric with respect to a first line passing
through the second point and perpendicular to a length direction
and symmetric with respect to a second line passing through the
second point and parallel to the length direction.
6. The apparatus according to claim 1, wherein a gas supply line is
connected to the upper electrode corresponding to the first
point.
7. A substrate treatment apparatus, comprising: a chamber providing
a reaction region and including first and second sides facing each
other; a module connected to the first side; an upper electrode in
the reaction region; a substrate holder facing the upper electrode,
wherein a substrate is disposed on the substrate holder, and first
and second points are defined on the substrate, wherein the first
point corresponds to a center of the substrate, and the second
point is distant from the first point toward the first side; and
first and second feeding lines for applying an RF power, the first
and second feeding lines connected to the upper electrode
corresponding to the first and second points, respectively.
8. The apparatus according to claim 7, wherein a substrate entrance
for carrying the substrate into and out of the chamber is set up at
the first side, and a slot valve is set up between the module and
the substrate entrance.
9. The apparatus according to claim 8, wherein the module includes
a transfer chamber or a load lock chamber for supplying the
substrate to the chamber or carrying the substrate out of the
chamber.
10. The apparatus according to claim 7, wherein the substrate is a
rectangle having a length and a width shorter than the length, and
the distance between the first point and the second point is within
a range of 10% to 30% of the length of the substrate.
11. The apparatus according to claim 7, wherein the substrate is a
rectangle having a length and a width shorter than the length, and
the distance between the first point and the second point is within
a range of 15% to 25% of the length of the substrate.
12. The apparatus according to claim 7, wherein the substrate is a
rectangle having a length and a width shorter than the length, and
the substrate is asymmetric with respect to a first line passing
through the second point and perpendicular to a length direction
and symmetric with respect to a second line passing through the
second point and parallel to the length direction.
13. A substrate treatment apparatus, comprising: a chamber
providing a reaction region and including first and second sides
facing each other; an upper electrode in the reaction region; a
substrate holder facing the upper electrode, wherein a substrate is
disposed on the substrate holder, and the substrate is a rectangle
having a length and a width shorter than the length, wherein first
and second points are defined on the substrate, the first point
corresponds to a center of the substrate, and the second point is
distant from the first point toward the first side by 2% to 5% of
the length of the substrate; and a feeding line for applying an RF
power, the feeding line connected to the upper electrode
corresponding to the second point.
14. The apparatus according to claim 13, wherein a substrate
entrance for carrying the substrate into and out of the chamber is
set up at the first side, a slot valve is connected to the
substrate entrance, and a module for transferring the substrate
into the reaction region is connected to the slot valve.
15. The apparatus according to claim 13, wherein the substrate is
asymmetric with respect to a first line passing through the second
point and perpendicular to a length direction and symmetric with
respect to a second line passing through the second point and
parallel to the length direction.
16. The apparatus according to claim 13, wherein a gas supply line
is connected to the upper electrode corresponding to the first
point.
17. A substrate treatment apparatus, comprising: a chamber
providing a reaction region and including first and second sides
facing each other; an upper electrode in the reaction region; a
substrate holder facing the upper electrode, wherein a substrate is
disposed on the substrate holder, and the substrate is a rectangle
having a length and a width shorter than the length, wherein first
and second points are defined on the substrate, the first point
corresponds to a center of the substrate, and the second point is
distant from the first point toward the first side by 10% to 30% of
the length of the substrate; and first and second feeding lines for
applying an RF power, the first and second feeding lines connected
to the upper electrode corresponding to the first and second
points, respectively.
18. The apparatus according to claim 17, wherein a substrate
entrance for carrying the substrate into and out of the chamber is
set up at the first side, a slot valve is connected to the
substrate entrance, and a module for transferring the substrate is
connected to the slot valve.
19. The apparatus according to claim 18, wherein the module
includes a transfer chamber or a load lock chamber for supplying
the substrate to the chamber or carrying the substrate out of the
chamber.
20. The apparatus according to claim 17, wherein the substrate is
asymmetric with respect to a first line passing through the second
point and perpendicular to a length direction and symmetric with
respect to a second line passing through the second point and
parallel to the length direction.
Description
[0001] The invention claims the benefit of Korean Patent
Applications No. 10-2008-0125507 filed on Dec. 10, 2008 and No.
10-2009-0093151 filed on Sep. 30, 2009, which is hereby
incorporated by references.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a substrate treatment
apparatus, and more particularly, to a substrate treatment
apparatus having uniform plasma.
[0004] 2. Discussion of the Related Art
[0005] In general, a semiconductor device, a display device or a
thin film solar cell is fabricated through a deposition process for
depositing a thin film on a substrate, a photolithography process
for exposing or covering a selected area of the thin film using a
photosensitive material, and an etching process for patterning the
selected area of the thin film. Among the processes, the deposition
process and the etching process are performed in a substrate
treatment apparatus, which is set up with optimum conditions.
[0006] FIG. 1 is a cross-sectional view of illustrating a substrate
treatment apparatus according to the related art, and FIG. 2 is a
schematic view of illustrating a substrate treatment apparatus
including a transfer chamber according to the related art.
[0007] In FIG. 1, a substrate treatment apparatus 10 includes a
process chamber 12, a backing plate 14, a gas supply line 36, a gas
distribution plate 18, a substrate holder 22, a substrate entrance
40, and an outlet 24. The process chamber 12 provides a reaction
space. The backing plate 14 is located in an upper portion inside
the process chamber 12 and is used as a plasma electrode. The gas
supply line 36 is connected to the backing plate 14 and provides
source gases into the process chamber 12. The gas distribution
plate 18 is located under the backing plate 14 and is formed of
aluminum. The gas distribution plate 18 includes a plurality of
injection holes. The substrate holder 22 is used as a counter
electrode to the plasma electrode, and a substrate 20 is disposed
on the substrate holder 22. The substrate 20 is carried into or out
of the process chamber 12 through the substrate entrance 40.
Reaction gases used in the process chamber 12 and by-products are
discharged through the outlet 24.
[0008] The gas supply line 36 is connected to a radio frequency
(RF) power source 30 through a power feeding line 38. In addition,
the gas supply line 36 is connected to a remote plasma controller
50. A matcher 32 for adjusting impedance is set up between the RF
power source 30 and the power feeding line 38. A buffer space 26 is
formed between the gas distribution plate 18 and the backing plate
14, and the gas distribution plate 18 is put on a support 28
extending from and connected to the backing plate 14. The source
gases are supplied into the process chamber 12, and an RF power
from the RF power source 30 is applied to the backing plate 14 and
the gas distribution plate 18. Plasma is generated due to an
electric field between the gas distribution plate 18 and the
substrate holder 22. Therefore, a thin film is formed on the
substrate 20, or a thin film on the substrate 20 is etched.
[0009] The gas distribution plate 36 is positioned at a central
part of the backing plate 14 corresponding to a center of the
process chamber 12. The backing plate 14 has a symmetric structure
with respect to each of a vertical line and a horizontal line
passing through the gas supply line 36. To process the substrate 20
in the process chamber 12, as shown in FIG. 2, a slot valve 42 is
connected to the substrate entrance 40 of the process chamber 12,
and a transfer chamber 44 is connected to the slot valve 42. The
transfer chamber 44 supplies the substrate 20 to the process
chamber 12 or carries the substrate 20 out of the process chamber
12.
[0010] The slot valve 42 and the transfer chamber 44 are
sequentially connected to a first side of the process chamber 12
having the substrate entrance 40, but a slot valve and a transfer
chamber are not connected to a second side of the process chamber
12 opposite to the substrate entrance 40. In addition, when the RF
power is applied to the backing plate 14 and the gas distribution
plate 18, RF currents provided from the RF power source 30 flow
along surfaces of the process chamber 12, the slot valve 42 and the
transfer chamber 44, which are formed of conductive materials. In
addition to the backing plate 14 and the gas distribution plate 18,
the RF currents are carried to surfaces of adjacent conductors,
that is, the process chamber 12, the slot valve 42 and the transfer
chamber 44.
[0011] By the way, in the related art substrate treatment apparatus
10 as shown in FIG. 1 and FIG. 2, the plasma may not be uniformly
generated. Therefore, a thin film having a non-uniform thickness
may be formed on the substrate 20. The non-uniform thickness of the
thin film may result from asymmetry of the electric field. The RF
currents at the second side of the process chamber 12 opposite to
the substrate entrance 40 flow only along the surface of the
process chamber 12 and have a first path. On the other hand, the RF
currents at the first side of the process chamber 12 having the
substrate entrance 40 flow along the surfaces of the process
chamber 12, the slot valve 40 and the transfer chamber 44 and has a
second path, which is longer than the first path due to the slot
valve 40 and the transfer chamber 44.
[0012] Accordingly, the asymmetry of the electric field is caused
by difference between the first and second paths. The asymmetry of
the electric field disturbs generation of uniform plasma and
affects formation of a thin film. A thickness of the thin film
formed on the substrate 10 adjacent to the first side of the
process chamber 12 is thicker than a thickness of the thin film
formed on the substrate 10 adjacent to the second side of the
process chamber 12. Therefore, the thickness of the thin film is
not uniform.
[0013] To solve the problem, the uniformity of the plasma may be
improved by increasing a distance between the gas distribution
plate 18 and the substrate holder 22. However, in this case, a
density of plasma is lowered, and a density of a thin film formed
on the substrate 10 is lowered.
SUMMARY OF THE INVENTION
[0014] Accordingly, the present invention is directed to a
substrate treatment apparatus that generates uniform plasma and
forms a thin film having a uniform thickness by setting up a
feeding line for applying an RF power to an upper electrode
corresponding to a point distant from a center of a substrate.
[0015] Another object of the present invention is to provide a
substrate treatment apparatus that generates uniform plasma and
forms a thin film having a uniform thickness by setting up first
and second feeding lines for applying an RF power to an upper
electrode corresponding to a center of a substrate and a point
distant from the center of a substrate, respectively.
[0016] Additional features and advantages of the invention will be
set forth in the description which follows, and in part will be
apparent from the description, or may be learned by practice of the
invention. The objectives and other advantages of the invention
will be realized and attained by the structure particularly pointed
out in the written description and claims hereof as well as the
appended drawings.
[0017] To achieve these and other advantages and in accordance with
the purpose of the present invention, as embodied and broadly
described, a substrate treatment apparatus includes a chamber
providing a reaction region and including first and second sides
facing each other, a module connected to the first side, an upper
electrode in the reaction region, a substrate holder facing the
upper electrode, wherein a substrate is disposed on the substrate
holder, and first and second points are defined on the substrate,
wherein the first point corresponds to a center of the substrate,
and the second point is distant from the first point toward the
first side, and a feeding line for applying an RF power, the
feeding line connected to the upper electrode corresponding to the
second point.
[0018] In another aspect, a substrate treatment apparatus includes
a chamber providing a reaction region and including first and
second sides facing each other, an upper electrode in the reaction
region, a substrate holder facing the upper electrode, wherein a
substrate is disposed on the substrate holder, and the substrate is
a rectangle having a length and a width shorter than the length,
wherein first and second points are defined on the substrate, the
first point corresponds to a center of the substrate, and the
second point is distant from the first point toward the first side
by 2% to 5% of the length of the substrate, and a feeding line for
applying an RF power, the feeding line connected to the upper
electrode corresponding to the second point.
[0019] In another aspect, a substrate treatment apparatus includes
a chamber providing a reaction region and including first and
second sides facing each other, an upper electrode in the reaction
region, a substrate holder facing the upper electrode, wherein a
substrate is disposed on the substrate holder, and the substrate is
a rectangle having a length and a width shorter than the length,
wherein first and second points are defined on the substrate, the
first point corresponds to a center of the substrate, and the
second point is distant from the first point toward the first side
by 10% to 30% of the length of the substrate, and first and second
feeding lines for applying an RF power, the first and second
feeding lines connected to the upper electrode corresponding to the
first and second points, respectively.
[0020] It is to be understood that both the foregoing general
description and the following detailed description are exemplary
and explanatory and are intended to provide further explanation of
the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate embodiments of
the invention and together with the description serve to explain
the principles of the invention. In the drawings:
[0022] FIG. 1 is a cross-sectional view of illustrating a substrate
treatment apparatus according to the related art;
[0023] FIG. 2 is a schematic view of illustrating a substrate
treatment apparatus including a transfer chamber according to the
related art;
[0024] FIG. 3 is a cross-sectional view of illustrating a substrate
treatment apparatus according to a first embodiment of the present
invention;
[0025] FIG. 4 is a schematic view of illustrating a substrate
treatment apparatus including a transfer chamber according to the
first embodiment of the present invention;
[0026] FIG. 5 is a plan view of illustrating a substrate treatment
apparatus according to the first embodiment of the present
invention
[0027] FIG. 6 is a cross-sectional view of illustrating a substrate
treatment apparatus according to a second embodiment of the present
invention;
[0028] FIG. 7 is a plan view of illustrating a substrate treatment
apparatus according to the second embodiment of the present
invention;
[0029] FIG. 8 is a graph showing a thickness of a thin film
according a distance of a power feeding line in the first
embodiment of the present invention;
[0030] FIG. 9 is a graph showing a uniformity of a thin film
according a distance of a power feeding line in the first
embodiment of the present invention;
[0031] FIG. 10 is a graph showing a thickness of a thin film
according a distance of a power feeding line in the first
embodiment of the present invention; and
[0032] FIG. 11 is a graph showing a uniformity of a thin film
according a distance of a power feeding line in the first
embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0033] Reference will now be made in detail to the preferred
exemplary embodiments, examples of which are illustrated in the
accompanying drawings. Wherever possible, similar reference numbers
will be used to refer to the same or similar parts.
[0034] FIG. 3 is a cross-sectional view of illustrating a substrate
treatment apparatus according to a first embodiment of the present
invention. FIG. 4 is a schematic view of illustrating a substrate
treatment apparatus including a transfer chamber according to the
first embodiment of the present invention. FIG. 5 is a plan view of
illustrating a substrate treatment apparatus according to the first
embodiment of the present invention. FIG. 8 is a graph showing a
thickness of a thin film according a distance of a power feeding
line in the first embodiment of the present invention. FIG. 9 is a
graph showing a uniformity of a thin film according a distance of a
power feeding line in the first embodiment of the present
invention.
[0035] In FIG. 3, a substrate treatment apparatus 110 for
processing a substrate for a semiconductor device or a large-sized
liquid crystal display device includes a process chamber 112, a
backing plate 114, a gas supply line 136, a gas distribution plate
118, a substrate holder 122, a substrate entrance 140, and an
outlet 124. The process chamber 112 provides a reaction space and
includes a first side and a second side opposite to the first side.
The backing plate 114 is located in an upper portion inside the
process chamber 112 and is used as an upper electrode. The gas
supply line 136 is connected to the backing plate 114 and provides
source gases into the process chamber 112. The gas distribution
plate 118 is located under the backing plate 114 and is formed of
aluminum. The gas distribution plate 118 includes a plurality of
injection holes 116. The substrate holder 122 is used as a counter
electrode to the upper electrode, that is, a lower electrode, and a
substrate 120 is disposed on the substrate holder 122. The
substrate entrance 140 is set up at the first side of the process
chamber 112 to carry the substrate 120 into or out of the process
chamber 112 therethrough. Reaction gases used in the process
chamber 112 and by-products are discharged through the outlet
124.
[0036] To process the substrate 120 in the process chamber 112, as
shown in FIG. 4, a slot valve 142 is connected to the substrate
entrance 140, and a module 144 for supplying the substrate 120 to
the process chamber 112 or carrying the substrate 120 out of the
process chamber 112. The module 144 may include a transfer chamber
or a load lock chamber. When the module 144 is connected to the
process chamber 112, the slot valve 142 and the module 144 are
sequentially set up at the first side of the process chamber 112
having the substrate entrance 140. However, a slot valve and a
module are not set up at the second side of the process chamber 112
opposite to the first side of the process chamber 112 having the
substrate entrance 140.
[0037] The process chamber 112 includes a chamber body 112a and a
chamber lid 112b, which is combined with the chamber body 112 to be
removable and seals up the reaction space. The chamber body 112a
may have a cylindrical shape or a polygonal shape including a
quadrangle of a rectangle with an opened upper part. The chamber
lid 112b may be a plate that has a shape corresponding to the
chamber body 112a. Although not shown in the figure, a sealing
means, for example, an O-ring or a gasket, may be interposed
between the chamber lid 112a and the chamber body 112b, and the
chamber lid 112a and the chamber body 112b are combined by a fixing
means.
[0038] The gas supply line 136 is connected to a remote plasma
controller 150. A matcher 132 for adjusting impedance is set up
between an RF power source 130 and a power feeding line 138. The
gas distribution plate 118 is put on a support 128 extending from
and connected to the backing plate 114 such that a buffer spacer
126 is formed between the gas distribution plate 118 and the
backing plate 114.
[0039] The buffer space 126 accommodates the source gases provided
from the gas supply line 136, and the backing plate 114 prevents
the source gases from leaking upward beyond the buffer space 126.
The source gases are uniformly injected toward the substrate holder
122 through the gas distribution plate 114. Accordingly, the source
gases are supplied between the substrate holder 122 and the gas
distribution plate 118, and an RF power is applied to the backing
plate 114 and the gas distribution plate 118. Plasma is generated
due to an electric field between the gas distribution plate 118 and
the substrate holder 122. Therefore, a thin film may be formed on
the substrate 120, or a thin film on the substrate 120 may be
etched. The substrate holder 122 may be grounded.
[0040] As shown in FIG. 5, the substrate 120 is disposed on the
substrate holder 122, and the gas supply line 136 is connected to
the backing plate 114 corresponding to a first point 146, which is
located at a center of the substrate 120. The substrate 120 may
have a symmetric structure with respect to each of a vertical line
and a horizontal line passing through the first point 146
corresponding to the gas supply line 136 in the context of the
figure. The gas supply line 136 may be disposed at a central part
of the backing plate 114, and the backing plate 114 may have a
symmetric structure with respect to each of a vertical line and a
horizontal line passing through the gas supply line 136 in the
context of the figure.
[0041] The power feeding line 138 connected to the RF power source
130 is connected to the backing plate 114 corresponding to a second
point 148. The second point 148 is distant from the first point
146, which is located at the center of the substrate 12 and
corresponds to the gas supply line 136, toward the first side of
the process chamber 112 including the substrate entrance 140 by a
distance of 2% to 5% of a length of the substrate 120, which is
longer than a width of the substrate 120 having a rectangular
shape. The power feeding line 138, beneficially, is set up to the
backing plate 114 corresponding to the second point 148, which is
distant from the first point 146 of the substrate 120 corresponding
to the gas supply line 136 by a distance of 3% to 4% of the length
of the substrate 120.
[0042] It is desirable that the power feeding line 138 is set up at
the backing plate 114 corresponding to the second point 148, which
is distant from the first point 146 of the substrate 120
corresponding to the gas supply line 136 by a distance of 2.5% to
4% of the length of the substrate 120, such that a thin film formed
on the substrate 120 has a thickness uniformity less than 4%.
[0043] The substrate 120 is asymmetric with respect to a vertical
line passing through the second point 148 corresponding to the
power feeding line 138 and symmetric with respect to a horizontal
line passing through the second point 148 in the context of the
figure. In FIG. 3 and FIG. 5, only one power feeding line 138 may
be connected to the backing plate 114 corresponding to the second
point 148.
[0044] FIG. 8 and FIG. 9 are graphs showing thickness and
uniformity of a thin film according to a change of a distance
between the power feeding line 138, which is connected to the
backing plate 114 corresponding to the second point 148 distant
from the first point 146 toward the substrate entrance 140, and the
gas supply line 136, which is connected to the backing plate 114
corresponding to the first point 146 located at the center of the
substrate 120, respectively, in the first embodiment of the present
invention.
[0045] In FIG. 8, an X axis means a long axis passing through the
first point 146 of the substrate 120, and a Y axis shows a
thickness (.ANG.) of a thin film formed on the substrate 120. More
particularly, the X axis of FIG. 8 shows measuring points on a line
passing through the first point 146 of the substrate 120 and being
parallel to a length direction of the substrate 120. The X axis of
FIG. 8 may correspond to the horizontal line passing through the
first point 146 in the context of FIG. 5. The measuring points are
defined such that the measuring points are disposed on the
horizontal line passing through the first point 146 of the
substrate 120 and are spaced apart from each other with a
predetermined distance therebetween. The thickness of the thin film
is measured at each of the measuring points according to the
distance between the gas supply line 136 and the power feeding line
138, which are set up at the backing plate 114 corresponding to the
first point 146 and the second point 148 of the substrate 120,
respectively.
[0046] In FIG. 9, a Y axis shows a uniformity of a thin film, more
particularly, a thickness uniformity of a thin film, and an X axis
shows a change of a distance of the power feeding line 138
connected to the backing plate 114 corresponding to the second
point 148, which is distant from the first point 146 toward the
substrate entrance 140, from the gas supply line 136 corresponding
to the first point 146, which is located at the center of the
substrate 120. In short, the X axis of FIG. 9 shows the distance
between the first point 146 and the second point 148, which
corresponds to a percentage of the length of the substrate 120.
[0047] Thin films of many kinds of materials or of materials having
various functions may be formed on the substrate 120. In the first
embodiment of the present invention, a silicon nitride layer, which
is widely used in a liquid crystal display device, is formed, for
example. Here, the silicon nitride layer may be formed by providing
SiH.sub.4, NH.sub.3 and N.sub.2 gases of 6500 standard cubic
centimeter per minute (sccm), 28000 sccm and 76500 sccm,
respectively, at temperatures of 290 to 295 degrees of Celsius
under a pressure of 1.2 torr in the process chamber 112 and by
applying an RF power of 22 kW to the power feeding line 138. In
addition, the substrate 120 may have the length of 2500 mm, the
width of 2200 mm, and a thickness of 0.7 mm.
[0048] The substrate 120 may be used in eighth generation equipment
for a liquid crystal display device. The substrate 120 may be a
rectangle having a length of 250 cm and a width of 220 cm. In the
first embodiment of the present invention shown in FIGS. 3 to 5,
when the substrate 120 has the length of 250 cm and the width of
220 cm, the distance between the first point 146 and the second
point 148, which respectively correspond to the gas supply line 136
and the power feeding line 138, can be defined according to a
percentage of the length of the substrate 120 as shown in Table
1.
TABLE-US-00001 TABLE 1 percentage of distance between substrate
length first and second points Ref. 1 0% 0 cm Ref. 2 2% 5 cm Ref. 3
3% 7.5 cm Ref. 4 4% 10 cm Ref. 5 5% 12.5 cm
[0049] The measuring points, which are spaced apart from each other
with a predetermined distance therebetween, are defined on the long
axis passing through the first point 146 of the substrate 120. A
thickness of each thin film, which is formed according to
conditions of Ref. 1 to Ref. 5, is measured at each of the
measuring points. A thickness uniformity of each thin film is
calculated using maximum and minimum thickness values and is shown
in Table 2. FIG. 9 shows the data of Table 2 as a graph.
TABLE-US-00002 TABLE 2 maximum minimum thickness thickness (.ANG.)
thickness (.ANG.) uniformity (%) Ref. 1 2506 1875 14.40 Ref. 2 2246
1987 6.13 Ref. 3 2046 1960 2.15 Ref. 4 2091 1980 3.67 Ref. 5 2217
1984 5.58
[0050] In Table 1, Ref. 1 corresponds to a case that the power
feeding line 138 is connected to the gas supply line 136 and the
distance between the first point 146 and the second point 148 is 0
cm. Ref. 2, Ref. 3, Ref. 4 and Ref. 5 correspond to cases that the
second point 148 is distant from the first point 146 by 2%, 3%, 4%
and 5% of the length of the substrate 120, respectively. In Table
2, the thickness uniformity of each thin film is calculated by the
equation of "{(maximum thickness-minimum thickness)/(maximum
thickness+minimum thickness)}.times.100."
[0051] Like Ref. 1 of Table 1, when the power feeding line 138 is
connected to the gas supply line 136 and the power feeding line 138
is disposed at the backing plate 114 corresponding to the center of
the substrate 120, the thickness of the thin film on the substrate
120 adjacent to the first side of the process chamber 112 having
the substrate entrance 140, which is about 2,500 .ANG., is thicker
than the thickness of the thin film on the substrate 120 adjacent
to the second side of the process chamber 112 facing the substrate
entrance 140, which is about 1,900 .ANG.. Accordingly, in the case
of Ref. 1 of Table 1, the thickness uniformity of the thin film
formed on the substrate 120 is about 14.40% as shown in Table 2,
and thickness deviation of the thin film is very high.
[0052] However, like Ref. 2 to Ref. 5 of Table 1, when the power
feeding line 138 is connected to the backing plate 114
corresponding to the second point 148, which is distant from the
first point 146 of the substrate 120, the thickness uniformity of
the thin film formed on the substrate 120 is considerably improved
as shown in Table 2.
[0053] As shown in Table 1, when the second point 148 is distant
from the first point 146 by 5 cm, that is, in the case of Ref. 2,
the thickness of the thin film is relatively thick on the substrate
120 adjacent to each of the first side of the process chamber 112
having the substrate entrance 140 and the second side of the
process chamber 112 facing the first side and is relatively thin on
the center of the substrate 120. As shown in Table 2, the thickness
uniformity of the thin film is about 6.13% improved as compared
with Ref. 1.
[0054] As shown in Table 1, when the second point 148 is distant
from the first point 146 by 12.5 cm, that is, in the case of Ref.
5, the thickness of the thin film decreases from the first side of
the process chamber 112 to the central portion of the process
chamber 112 and increases from the central portion of the process
chamber 112 to the second side of the process chamber 112. As shown
in Table 2, the thickness uniformity of the thin film is about
5.58% improved as compared with Ref. 1.
[0055] As shown in Table 1, in cases of Ref. 3 and Ref. 4, the
thickness of each thin film has some deviations on the substrate
120 adjacent to the first side and the second side of the process
chamber 112, and the thickness uniformities are 2.15% and 3.67%,
respectively, which are relatively uniform.
[0056] As shown in FIG. 8, in cases of Ref. 3 to Ref. 5 that the
distance between the first point 146 and the second point 148,
which corresponds to the power feeding line 138 and is distant from
the first point 146 toward the substrate entrance 140, is within a
range of 3% to 5% of the length of the substrate 120, the thickness
of the thin film formed on the substrate 120 adjacent to the first
side of the process chamber 112 is thinner than the thickness of
the thin film formed on the substrate 120 adjacent to the second
side of the process chamber 112 opposite to the first side of the
process chamber 112 as compared with cases of Ref. 1 and Ref.
2.
[0057] According to the experimental results of FIG. 8, FIG. 9,
Table 1 and Table 2, when the power feeding line 138 is connected
to the backing plate 114 corresponding to the second point 148,
which is distant from the first point 146 of the substrate 120 by
about 5 cm to about 12 cm, the thickness uniformity can be improved
to be less than 10%. When the thin film is formed according to the
conditions of Ref. 2 to Ref. 5 of Table 1, the thickness uniformity
of Table 2 is within a range of 0 to 10%.
[0058] Beneficially, when the power feeding line 138 is connected
to the backing plate 114 corresponding to the second point 148,
which is distant from the first point 146 by 7 cm to 10 cm, the
thickness uniformity of the thin film can be further improved. The
lower value the thickness uniformity of the thin film has, the
better the thickness uniformity of the thin film is, and it is best
that the thickness uniformity of the thin film is 0%. Generally,
when the thin film is used in a display device or a semiconductor
device, it is okay that the thickness uniformity of the thin film
is less than 10%. However, when high accuracy is required,
conditions for the thickness uniformity near 0% can be chosen.
[0059] To manufacture good products, the thin film formed on the
substrate 120, desirably, has the thickness uniformity of less than
4%. Referring to FIG. 9, the distance from the power feeding line
138 to the gas supply line 136, which corresponds to the thickness
uniformity of 0% to 4%, is within the "A" range of the length of
the substrate 120, that is, 2.5% to 4%. Therefore, it is desirable
that the power feeding line 138 is set up to the backing plate 114
corresponding to the second point 148, which is distant from the
first point 146 of the substrate 120 corresponding to the gas
supply line 136 by 2.5% to 4% of the length of the substrate 120,
such that the thickness uniformity of the thin film formed on the
substrate 120 is within a range of 0% to 4%.
[0060] It is obtained by analyzing results of experiments that the
power feeding line 138 is set up at the second point 148, which is
distant from the first point 146 toward the substrate entrance 140
by 2% to 5% of the length of the substrate 120. It is understood
that the thickness of the thin film may vary because a center of
the electric field moves according to the position of the power
feeding line 138.
[0061] When the RF power from the RF power source 130 is applied to
the backing plate 114 and the gas distribution plate 118, RF
currents flow along the surfaces of the process chamber 112, the
slot valve 142 and the module 144 that are formed of conductive
materials due to the RF power. In addition to the backing plate 114
and the gas distribution plate 118, the RF currents are carried to
surfaces of adjacent conductors, namely, the process chamber 112,
the slot valve 142 and the module 144.
[0062] In the first embodiment of the present invention, if the
power feeding line 138 is set up as shown in FIG. 3 to FIG. 5, the
thickness uniformity of the thin film formed on the substrate 120
is improved. This is why the asymmetry of the electric field of the
related art is improved, and a uniform thin film is formed. The RF
currents, which flow along the surface of the process chamber 112
at the second side of the process chamber 112 facing the substrate
entrance 140 and are grounded, have a first path, and the RF
currents, which flow along the surfaces of the process chamber 112,
the slot valve 140 and the module 144 at the first side of the
process chamber 112 having the substrate entrance 140 and are
grounded, have a second path. Since the power feeding line 138 is
set up to move from the center of the process chamber 112 toward
the substrate entrance 140, the asymmetry of the RF currents
flowing along the first and second paths is improved, and the
deviation of the thickness of the thin film on the substrate 120 is
minimized.
[0063] By setting up the power feeding line 138 off from the center
as stated above, there is an effect that the RF currents flowing
along the first and second paths are substantially symmetric. In
addition, the gas supply line 136 may be set up to the backing
plate 114 where the power feeding line 138 is disposed, and the
power feeding line 138 may be connected to the gas supply line 136.
At this time, the gas supply line 136 may be disposed at the second
point 148.
[0064] FIG. 6 is a cross-sectional view of illustrating a substrate
treatment apparatus according to a second embodiment of the present
invention. FIG. 7 is a plan view of illustrating a substrate
treatment apparatus according to the second embodiment of the
present invention. FIG. 10 is a graph showing a thickness of a thin
film according a distance of a power feeding line in the first
embodiment of the present invention. FIG. 11 is a graph showing a
uniformity of a thin film according a distance of a power feeding
line in the first embodiment of the present invention.
[0065] In FIG. 6 and FIG. 7, the substrate 120 is disposed on the
substrate holder 122, and the gas supply line 136 is connected to
the backing plate 114 corresponding to the first point 146, which
is located at the center of the substrate 120. The substrate 120
may have a symmetric structure with respect to each of a vertical
line and a horizontal line passing through the first point 146
corresponding to the gas supply line 136 in the context of the
figures. The gas supply line 136 may be disposed at a central part
of the backing plate 114, and the backing plate 114 may have a
symmetric structure with respect to each of a vertical line and a
horizontal line passing through the gas supply line 136 in the
context of the figures.
[0066] The power feeding line 138 connected to the RF power source
130 includes first and second power feeding lines 138a and 138b.
The first power feeding line 138a is connected to the gas supply
line 136. The second power feeding line 138b is connected to the
backing plate 114 corresponding to the second point 148, which is
distant from the first point 146 of the substrate 120 corresponding
to the gas supply line 136 toward the first side of the process
chamber 112 including the substrate entrance 140 by 10% to 30% of
the length of the substrate 120. The second power feeding line
138b, beneficially, is set up to the backing plate 114
corresponding to the second point 148, which is distant from the
first point 146 of the substrate 120 corresponding to the gas
supply line 136 toward the substrate entrance 140 by 20% of the
length of the substrate 120.
[0067] The substrate 120 is asymmetric with respect to a vertical
line passing through the second point 148 corresponding to the
second power feeding line 138b and symmetric with respect to a
horizontal line passing through the second point 148 in the context
of the figures. More than two power feeding lines may be set up as
occasion demands. At this time, one of the power feeding lines may
be set up to the backing plate 114 corresponding to the first point
146 of the substrate 120, and the others of the power feeding lines
may be set up to the backing plate 114 corresponding to an area
between the substrate entrance 140 and the first point 146 of the
substrate 120.
[0068] When the gas supply line 136 is disposed at the central part
of the backing plate 114, the first power feeding line 138a may be
connected to the gas supply line 136, and the second power feeding
line 138b may be connected to the backing plate 114 at a point
distant from the gas supply line 136 by 10% to 30% of a length of
the backing plate 114, wherein the backing plate 114 is a rectangle
having the length and a width, which is shorter than the length.
Beneficially, the second power feeding line 138b may be set up to
the backing plate 114 at a point distant from a center of the gas
supply line 136 by 10% of the length of the backing plate 114.
[0069] The first point 146 and the second point 148, which
respectively correspond to the first power feeding line 138a
connected to the gas supply line 136 and the second power feeding
line 138b, beneficially, are separated from each other by 15% to
25% of the length of the substrate 120. The backing plate 114 is
asymmetric with respect to a vertical line passing through the
second power feeding line 138b and symmetric with respect to a
horizontal line passing through the second power feeding line 138b
in the context of the figures. In FIG. 6 and FIG. 7, only two power
feeding lines 138a and 138b may be connected to the backing plate
114 corresponding to the first point 146 and the second point 148,
respectively.
[0070] FIG. 10 and FIG. 11 are graphs showing thickness and
uniformity of a thin film according to a change of a distance
between the first point 146 and the second point 148 when the first
power feeding line 138a is connected to the gas supply line 136
corresponding to the first point 146, which is located at the
center of the substrate 120, and the second power feeding line 138b
is connected to the backing plate 114 corresponding to the second
point 148 distant from the first point 146 toward the substrate
entrance 140 in the second embodiment of the present invention.
[0071] In FIG. 10, an X axis means a long axis passing through the
first point 146 of the substrate 120, and a Y axis shows a
thickness (.ANG.) of a thin film formed on the substrate 120. More
particularly, the X axis of FIG. 8 shows measuring points on a line
passing through the first point 146 of the substrate 120 and being
parallel to a length direction of the substrate 120. The X axis of
FIG. 8 may correspond to the horizontal line passing through the
first point 146 in the context of FIG. 7. The measuring points are
defined such that the measuring points are disposed on the
horizontal line passing through the first point 146 of the
substrate 120 and are spaced apart from each other with a
predetermined distance therebetween. The thickness of the thin film
is measured at each of the measuring points according to the
distance between the first point 146 and the second point 148,
which corresponding to the first power feeding line 138a and the
second power feeding line 138b, respectively.
[0072] In FIG. 11, a Y axis shows a uniformity of a thin film, more
particularly, a thickness uniformity of a thin film, and an X axis
shows a change of a distance between the first power feeding line
138a and the second power feeding line 138b, which respectively are
connected to the gas supply line 136 corresponding to the first
point 146 located at the center of the substrate 120 and the
backing plate 114 corresponding to the second point 148 distant
from the first point 146 toward the substrate entrance 140. The X
axis of FIG. 11 corresponds to a percentage of the length of the
substrate 120.
[0073] Thin films of many kinds of materials or of materials having
various functions may be formed on the substrate 120. In the second
embodiment of the present invention, a silicon nitride layer, which
is widely used in a liquid crystal display device, is formed, for
example. Here, the silicon nitride layer may be formed by providing
SiH.sub.4, NH.sub.3 and N.sub.2 gases of 6500 sccm, 28000 sccm and
76500 sccm, respectively, at temperatures of 290 to 295 degrees of
Celsius under a pressure of 1.2 torr in the process chamber 112 and
by applying an RF power of 22 kW to the power feeding line 138. In
addition, the substrate 120 may be a glass substrate having the
length of 2500 mm, the width of 2200 mm, and a thickness of 0.7
mm.
[0074] The substrate 120 may be used in eighth generation equipment
for a liquid crystal display device. The substrate 120 may be a
rectangle having a length of 250 cm and a width of 220 cm. In the
second embodiment of the present invention shown in FIGS. 6 and 7,
when the substrate 120 has the length of 250 cm and the width of
220 cm, the distance between the first point 146 and the second
point 148, which respectively correspond to the first power feeding
line 138a connected to the gas supply line 136 and the second power
feeding line 138b, can be defined according to a percentage of the
length of the substrate 120 as shown in Table 3.
TABLE-US-00003 TABLE 3 distance between percentage of substrate
length first and second points Ref. 1 0% 0 cm Ref. 2 10% 35 cm Ref.
3 20% 50 cm Ref. 4 30% 75 cm
[0075] The measuring points, which are spaced apart from each other
with a predetermined distance therebetween, are defined on the long
axis passing through the first point 146 and the second point 148
of the substrate 120. A thickness of each thin film, which is
formed according to conditions of Ref. 1 to Ref. 4 of Table 3, is
measured at each of the measuring points. A thickness uniformity of
each thin film is calculated using maximum and minimum thickness
values and is shown in Table 4. FIG. 11 shows the data of Table 4
as a graph.
TABLE-US-00004 TABLE 4 maximum minimum thickness thickness (.ANG.)
thickness (.ANG.) uniformity (%) Ref. 1 2506 1875 14.40 Ref. 2 2273
2038 5.46 Ref. 3 2209 2107 2.36 Ref. 4 2250 2001 5.87
[0076] In Table 3, Ref. 1 corresponds to a case that the first and
second power feeding lines 138a and 138b are connected to the gas
supply line 136 and the distance between the first point 146 and
the second point 148 is 0 cm. Ref. 2, Ref. 3 and Ref. 4 correspond
to cases that the second point 148 is distant from the first point
146 by 10%, 20% and 30% of the length of the substrate 120,
respectively. In Table 4, the thickness uniformity of each thin
film is calculated by the equation of "{(maximum thickness-minimum
thickness)/(maximum thickness+minimum thickness)}.times.100."
[0077] Like Ref. 1 of Table 3, when the first and second power
feeding lines 138a and 138b are connected to the gas supply line
136 and the second power feeding line 138b is disposed at the
center of the substrate 120, the thickness of the thin film on the
substrate 120 adjacent to the first side of the process chamber 112
having the substrate entrance 140, which is about 2,500 .ANG., is
thicker than the thickness of the thin film on the substrate 120
adjacent to the second side of the process chamber 112 opposite to
the first side, which is about 1,900 .ANG.. Accordingly, in the
case of Ref. 1 of Table 3, the thickness uniformity of the thin
film formed on the substrate 120 is about 14.40% as shown in Table
2, and thickness deviation of the thin film is very high.
[0078] However, like Ref. 2 to Ref. 4 of Table 3, when the first
power feeding line 138a is connected to the gas supply line 136
corresponding to the first point 146, which is disposed at the
center of the substrate 120, and the second power feeding line 138b
is connected to the backing plate 114 corresponding to the second
point 148, which is distant from the first point 146 of the
substrate 120, the thickness uniformity of the thin film formed on
the substrate 120 is considerably improved as shown in Table 4.
[0079] In the case of Ref. 2 of Table 3 that the second point 148
is distant from the first point 146 by 25 cm, the thickness of the
thin film adjacent to the first side of the process chamber 112
having the substrate entrance 140 is thicker than the thickness of
the thin film adjacent to the second side of the process chamber
112 facing the first side of the process chamber 112. The thickness
uniformity of the thin film is about 5.46% improved as compared
with Ref. 1 of Table 3.
[0080] In the case of Ref. 3 of Table 3 that the second point 148
is distant from the first point 146 by 50 cm, the thickness of the
thin film adjacent to the first side of the process chamber 112
having the substrate entrance 140 is thicker than the thickness of
the thin film adjacent to the second side of the process chamber
112 facing the first side of the process chamber 112. The thickness
uniformity of the thin film is about 2.36% improved as compared
with Ref. 1 and Ref. 2.
[0081] In the case of Ref. 4, the thickness of the thin film
increases from the first side to the second side of the process
chamber 112, and the thickness uniformity of the thin film is about
5.87% improved as compared with Ref. 1.
[0082] According to the experimental results of FIG. 10, FIG. 11,
Table 3 and Table 4, when the distance between the first and second
power feeding lines 138a and 138b corresponding to the first and
second points 146 and 148, respectively, is within a range of 25 cm
to 75 cm, the thickness uniformity can be improved to be less than
10%. When the thin film is formed according to the conditions of
Ref. 2 to Ref. 4 of Table 3, the thickness uniformity of Table 4 is
within a range of 0 to 10%. The thickness uniformity of the thin
film can be further improved when the second power feeding line
138b, beneficially, is connected to the backing plate 114
corresponding to the second point 148, which is distant from the
first power feeding line 138a corresponding to the first point 146
by about 50 cm.
[0083] In the second embodiment of the present invention of FIG. 6
and FIG. 7, when the backing plate 114 has a length of 250 cm and a
width of 220 cm, the second power feeding line 138 may be set up at
a point distant from the center by about 25 cm to 75 cm, and
desirably, may be set up at a point distant from the center by
about 50 cm. Substantially, the effect is the same as when the RF
power is applied to a middle point between the first and second
power feeding lines 138a and 138b.
[0084] The lower value the thickness uniformity of the thin film
has, the better the thickness uniformity of the thin film is, and
it is best that the thickness uniformity of the thin film is 0%.
Generally, when the thin film is used in a display device or a
semiconductor device, it is okay that the thickness uniformity of
the thin film is less than 10%. However, when high accuracy is
required, conditions for the thickness uniformity near 0% can be
chosen.
[0085] To manufacture good products, the thin film formed on the
substrate 120, desirably, has the thickness uniformity of less than
4%. Referring to FIG. 11, the distance between the first and second
power feeding lines 138a and 138b, which corresponds to the
thickness uniformity of 0% to 4%, is within the "B" range of the
length of the substrate 120, that is, 15% to 25%. Therefore, it is
desirable that the first point 146 and the second point 148 of the
substrate 120, which correspond to the first power feeding line
138a connected to the gas supply line 136 and the second power
feeding line 138b, respectively, are spaced apart from each other
by 15% to 25% of the length of the substrate 120, such that the
thickness uniformity of the thin film formed on the substrate 120
is within a range of 0% to 4%.
[0086] It is obtained by analyzing results of experiments that the
second power feeding line 138b is set up at the second point 148,
which is distant from the first point 146 toward the substrate
entrance 140 by 10% to 30% of the length of the substrate 120. It
is understood that the thickness of the thin film may vary because
a center of the electric field moves according to the position of
the second power feeding line 138b.
[0087] When the RF power from the RF power source 130 is applied to
the backing plate 114 and the gas distribution plate 118, RF
currents flow along the surfaces of the process chamber 112, the
slot valve (not shown) and the module (not shown) that are formed
of conductive materials due to the RF power. In addition to the
backing plate 114 and the gas distribution plate 118, the RF
currents are carried to the surfaces of adjacent conductors,
namely, the process chamber 112, the slot valve and the module.
[0088] If the first and second power feeding lines 138a and 138b
are set up as shown in FIG. 6 and FIG. 7, the thickness uniformity
of the thin film formed on the substrate 120 is improved. This is
why the asymmetry of the electric field of the related art is
improved, and a uniform thin film is formed. The RF currents, which
flow along the surface of the process chamber 112 at the second
side of the process chamber 112 facing the substrate entrance 140
from the first and second power feeding lines 138a and 138b and are
grounded, have a first path, and the RF currents, which flow along
the surfaces of the process chamber 112, the slot valve and the
module at the first side of the process chamber 112 having the
substrate entrance 140 from the first and second power feeding
lines 138a and 138b and are grounded, have a second path. Since the
power feeding line 138 is set up to move from the center of the
process chamber 112, which corresponds to the first point 146 of
the substrate 120, toward the substrate entrance 140, the asymmetry
of the RF currents flowing along the first and second paths is
improved, and the deviation of the thickness of the thin film on
the substrate 120 is minimized.
[0089] In the substrate treatment apparatus of the present
invention, since the power feeding line is connected to the upper
electrode, which corresponds to the point distant from the center
of the substrate toward the substrate entrance where the module
such as the transfer chamber and the slot valve is set up, the
asymmetry between the path of the RF currents flowing along the
surface of the chamber at the side opposite to the substrate
entrance and the path of the RF currents flowing at the side of the
substrate entrance is improved. A thin film having a uniform
thickness can be formed due to generation of uniform plasma.
[0090] Meanwhile, the power feeding line may include the first and
second power feeding lines for supplying the RF power. The first
power feeding line is connected to the upper electrode
corresponding to the center of the substrate, and the second power
feeding line is connected to the upper electrode corresponding to
the point, which is distant from the center of the substrate toward
the substrate entrance where the module such as the transfer
chamber and the slot valve is set up. Accordingly, the asymmetry
between the path of the RF currents flowing along the surface of
the chamber at the side opposite to the substrate entrance and the
path of the RF currents flowing at the side of the substrate
entrance is improved. Therefore, a thin film having a uniform
thickness can be formed due to generation of uniform plasma.
[0091] It will be apparent to those skilled in the art that various
modifications and variations can be made in the apparatus without
departing from the spirit or scope of the invention. Thus, it is
intended that the present invention covers the modifications and
variations of this invention provided they come within the scope of
the appended claims and their equivalents.
* * * * *