U.S. patent application number 12/588690 was filed with the patent office on 2010-04-29 for organic light emitting diode display device and method of manufacturing the same.
Invention is credited to Min-Chul Suh.
Application Number | 20100102715 12/588690 |
Document ID | / |
Family ID | 42116803 |
Filed Date | 2010-04-29 |
United States Patent
Application |
20100102715 |
Kind Code |
A1 |
Suh; Min-Chul |
April 29, 2010 |
Organic light emitting diode display device and method of
manufacturing the same
Abstract
The OLED display device includes a substrate, a first electrode
located on the substrate, a pixel defining layer located on the
first electrode to expose a part of the first electrode, a
fluorine-based polymer layer located on the pixel defining layer,
an organic layer located on the first electrode, and a second
electrode located on the entire surface of the substrate. The
method of manufacturing the OLED display device includes forming a
first electrode on a substrate, forming a pixel defining layer on
the first electrode, forming a fluorine-based polymer layer on the
pixel defining layer, patterning the fluorine-based polymer layer
and the pixel defining layer by laser ablation to open a part of
the first electrode, forming an organic layer on the opened first
electrode, and forming a second electrode on the entire surface of
the substrate.
Inventors: |
Suh; Min-Chul; (Yongin-City,
KR) |
Correspondence
Address: |
ROBERT E. BUSHNELL & LAW FIRM
2029 K STREET NW, SUITE 600
WASHINGTON
DC
20006-1004
US
|
Family ID: |
42116803 |
Appl. No.: |
12/588690 |
Filed: |
October 23, 2009 |
Current U.S.
Class: |
313/504 ;
427/66 |
Current CPC
Class: |
H01L 51/56 20130101;
H01L 27/3246 20130101 |
Class at
Publication: |
313/504 ;
427/66 |
International
Class: |
H01J 1/63 20060101
H01J001/63; B05D 5/12 20060101 B05D005/12; B05D 5/06 20060101
B05D005/06 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 23, 2008 |
KR |
10-2008-0104427 |
Claims
1. An organic light emitting diode (OLED) display device,
comprising: a substrate; a first electrode located on the
substrate; a pixel defining layer located on the first electrode,
the pixel defining layer having an opening; a fluorine-based
polymer layer located on the pixel defining layer, the
fluorine-based polymer layer having an opening, the opening of the
fluorine-based polymer layer interconnecting to the opening of the
pixel-defining layer to expose a part of the first electrode; an
organic layer located on the exposed part of the first electrode;
and a second electrode located on the organic layer and the
fluorine-based polymer layer.
2. The OLED display device of claim 1, wherein the fluorine-based
polymer layer is formed using a hydrophobic material.
3. The OLED display device of claim 1, wherein the fluorine-based
polymer layer comprises at least one of the compounds represented
by Formulae 1 to 3: ##STR00007## wherein n is an integer of about
50 to 1,000; ##STR00008## wherein m is an integer of about 50 to
1,000, and n is an integer of about 50 to 1,000; and ##STR00009##
wherein n is an integer of about 50 to 1,000.
4. The OLED display device of claim 1, wherein the fluorine-based
polymer layer comprises a compound represented by Formula 1:
##STR00010## wherein n is an integer of about 50 to 1,000.
5. The OLED display device of claim 1, wherein the fluorine-based
polymer layer comprises a compound represented by Formula 2:
##STR00011## wherein m is an integer of about 50 to 1,000, and n is
an integer of about 50 to 1,000.
6. The OLED display device of claim 1, wherein the fluorine-based
polymer layer comprises a compound represented by Formula 3:
##STR00012## wherein n is an integer of about 50 to 1,000.
7. The OLED display device of claim 1, wherein the fluorine-based
polymer layer has a thickness of about 100 to 3,000 .ANG..
8. The OLED display device of claim 1, wherein the pixel defining
layer is formed using a photoresist material.
9. The OLED display device of claim 1, wherein the pixel defining
layer has a thickness of about 1,000 .ANG. to 1 .mu.m.
10. An organic light emitting diode (OLED) display device,
comprising: a substrate; a first electrode located on the
substrate; a pixel defining layer located on the first electrode,
the pixel defining layer having an opening, the pixel defining
layer formed using a photoresist material; a fluorine-based polymer
layer located on the pixel defining layer, the fluorine-based
polymer layer having an opening, the opening of the fluorine-based
polymer layer interconnecting to the opening of the pixel-defining
layer to expose a part of the first electrode, the fluorine-based
polymer layer comprising at least one of the compounds represented
by Formulae 1 to 3: ##STR00013## wherein n is an integer of about
50 to 1,000; ##STR00014## wherein m is an integer of about 50 to
1,000, and n is an integer of about 50 to 1,000; and ##STR00015##
wherein n is an integer of about 50 to 1,000; an organic layer
located on the exposed part of the first electrode; and a second
electrode located on the organic layer and the fluorine-based
polymer layer.
11. A method of manufacturing an organic light emitting diode
(OLED) display device, comprising: providing a substrate; forming a
first electrode on the substrate; forming a pixel defining layer on
the first electrode; forming a fluorine-based polymer layer on the
pixel defining layer; forming an opening in the pixel defining
layer and the fluorine-based polymer layer to expose a part of the
first electrode; forming an organic layer on the exposed part of
the first electrode; and forming a second electrode on the organic
layer and the fluorine-based polymer layer.
12. The method of claim 11, wherein the formation of the opening in
the pixel defining layer and the fluorine-based polymer layer
comprises patterning the pixel defining layer and the
fluorine-based polymer layer by laser ablation.
13. The method of claim 12, wherein the laser is irradiated at an
intensity of about 300 mW/cm.sup.2 or more.
14. The method of claim 11, wherein the pixel defining layer is
formed using a photoresist material.
15. The method of claim 11, wherein the fluorine-based polymer
layer is formed using at least one of the compounds represented by
Formulae 1 to 3: ##STR00016## wherein n is an integer of about 50
to 1,000; ##STR00017## wherein m is an integer of about 50 to
1,000, and n is an integer of about 50 to 1,000; and ##STR00018##
wherein n is an integer of about 50 to 1,000.
16. The method of claim 15, wherein the fluorine-based polymer
layer comprises a compound represented by Formula 1.
17. The method of claim 15, wherein the fluorine-based polymer
layer comprises a compound represented by Formula 2.
18. The method of claim 15, wherein the fluorine-based polymer
layer comprises a compound represented by Formula 3.
19. The method of claim 11, wherein the fluorine-based polymer
layer is formed to have a thickness of about 100 to 3,000 .ANG..
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of Korean Patent
Application No. 2008-104427, filed Oct. 23, 2008, the disclosure of
which is hereby incorporated herein by reference in its
entirety.
BACKGROUND
[0002] 1. Field
[0003] Non-limiting example embodiments of the present invention
relate to an organic light emitting diode (OLED) display device and
methods of manufacturing the same, and more particularly, to OLED
display devices in which an organic layer is formed after easily
patterning a pixel defining layer formed of a photoresist material
using a fluorine-based polymer layer to improve a surface property
of a first electrode, and a method of manufacturing the same.
[0004] 2. Related Art
[0005] Among flat panel display devices, an OLED display device has
advantages such as a fast response time of 1 ms or less, low power
consumption, self-emission and a wide viewing angle as a moving
picture display medium regardless of its size. It may be also
fabricated at a low temperature and in a simple process based on
conventional semiconductor processing technology, and thus attracts
attention as a next generation flat panel display device.
[0006] The OLED display device may be classified as a polymer
device manufactured by using a wet process or a small molecule
device manufactured by using deposition, depending on the material
used for an organic light emitting diode and the process.
[0007] Among methods of patterning a polymer or small molecule
emission layer, when an emission layer is pattered by ink-jet
printing, materials for organic layers except for an emission layer
are limited, and a structure for ink-jet printing should be formed
on a substrate. When an emission layer is pattered by deposition,
it is difficult to fabricate a large device due to use of a metal
mask. An alternative technique for such a patterning technique is
laser induced thermal imaging (LITI), which has developed in recent
times.
[0008] However, there are some problems when an organic layer
including an emission layer is formed by these methods. An organic
light emitting diode includes many underlying polymer organic
layers, which may be also formed in a non-emission region while
these organic layers including an organic emission layer are formed
on a first electrode, thereby affecting an underlying device. Thus,
defects may be generated and production yield may be reduced.
SUMMARY
[0009] Non-limiting example embodiments of the present invention
provide organic light emitting diode (OLED) display devices. The
organic light emitting diode display device may include a
substrate, a first electrode, a pixel defining layer, a
fluorine-based polymer layer, an organic layer and a second
electrode. For example, the first electrode is located on the
substrate. The pixel defining layer is located on the first
electrode. The pixel defining layer has an opening. The
fluorine-based polymer layer is located on the pixel defining
layer. The fluorine-based polymer has an opening. The opening of
the fluorine-based polymer layer interconnects to the opening of
the pixel-defining layer to expose a part of the first electrode.
The organic layer is located on the exposed part of the first
electrode. The second electrode is located on the organic layer and
the fluorine-based polymer layer.
[0010] Non-limiting example embodiments of the present invention
provide OLED devices. The OLED devices include a substrate, a first
electrode, a pixel, a fluorine-based polymer layer, an organic
layer and a second electrode. For example, the first electrode is
located on the substrate. The pixel defining layer is located on
the first electrode. The pixel defining layer has an opening. The
pixel defining layer is formed using a photoresist material. The
fluorine-based polymer layer is located on the pixel defining
layer. The fluorine-based polymer has an opening. The opening of
the fluorine-based polymer layer interconnects to the opening of
the pixel-defining layer to expose a part of the first electrode.
The organic layer is located on the exposed part of the first
electrode. The second electrode is located on the organic layer and
the fluorine-based polymer layer. The fluorine-based polymer layer
comprises at least one of the compounds represented by Formulae 1
to 3:
##STR00001## [0011] wherein n is an integer of about 50 to
1,000;
[0011] ##STR00002## [0012] wherein m is an integer of about 50 to
1,000, and n is an integer of about 50 to 1,000; and
[0012] ##STR00003## [0013] wherein n is an integer of about 50 to
1,000.
[0014] Non-limiting example embodiments of the present invention
provide methods of manufacturing OLED devices. For example, a
substrate is provided. A first electrode is formed on the
substrate. A pixel defining layer is formed on the first electrode.
A fluorine-based polymer layer is formed on the pixel defining
layer. An opening is formed in the pixel defining layer and the
fluorine-based polymer layer to expose a part of the first
electrode. An organic layer is formed on the exposed part of the
first electrode. A second electrode is formed on the organic layer
and the fluorine-based polymer layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] A more complete appreciation of the invention, and many of
the attendant advantages thereof, will be readily apparent as the
same becomes better understood by reference to the following
detailed description when considered in conjunction with the
accompanying drawings in which like reference symbols indicate the
same or similar components, wherein:
[0016] FIGS. 1A to 1E are cross-sectional views illustrating an
organic light emitting diode (OLED) display device according to
non-limiting example embodiments of the present invention.
DETAILED DESCRIPTION
[0017] Non-limiting example embodiments of the present invention
will be described more fully hereinafter with reference to the
accompanying drawings, in which the non-limiting example
embodiments of the invention are shown. This invention may,
however, be embodied in different forms and should not be construed
as limited to the embodiments set forth herein. Rather, these
non-limiting embodiments are provided so that this disclosure will
be thorough and complete, and will fully convey the scope of the
invention to those skilled in the art. In the drawings, the
thicknesses of layers and regions may be exaggerated for clarity.
Like reference numerals designate like elements throughout the
specification.
[0018] FIGS. 1A to 1E are cross-sectional views illustrating an
organic light emitting diode (OLED) display device according to
non-limiting example embodiments of the present invention.
[0019] Referring to FIGS. 1A and 1B, a substrate 100 is provided.
The exemplary material included in the substrate 100 may be glass
or plastic.
[0020] Subsequently, a buffer layer 101 is formed on the substrate
100. The buffer layer 101 functions to facilitate crystallization
of a polycrystalline silicon layer to be formed in the following
process by preventing diffusion of moisture or impurities generated
from the underlying substrate 100 and/or controlling a heat
transfer rate during crystallization.
[0021] Then, an amorphous silicon layer (not illustrated) is formed
on the buffer layer 101. Here, the amorphous silicon layer may be
formed by chemical vapor deposition or physical vapor deposition.
While or after forming the amorphous silicon layer, the amorphous
silicon layer may be dehydrogenated to reduce the concentration of
hydrogen.
[0022] A semiconductor layer 102 is formed by crystallizing the
amorphous silicon layer into a polycrystalline silicon layer. Here,
the semiconductor layer 102 is formed by crystallizing the
amorphous silicon layer using a solid phase crystallization (SPC)
process, a sequential lateral solidification (SLS) process, a metal
induced crystallization (MIC) process, a metal induced lateral
crystallization (MILC) process, a super grain silicon (SGS)
process, a rapid thermal annealing (RTA) process, or an excimer
laser annealing (ELA) process, and then patterning the crystallized
layer.
[0023] After that, a gate insulating layer 104 is formed on the
substrate 100 having the semiconductor layer 102, and the gate
insulating layer may be formed using silicon oxide, silicon nitride
or a combination thereof. In addition, the gate insulating layer
may be a single- or multi-layered structure.
[0024] A gate electrode 106 is then formed on the gate insulating
layer 104. The gate electrode 106 is formed on a portion of the
gate insulating layer 104 corresponding to the semiconductor layer
102 by forming a metal layer, and etching the metal layer for the
gate electrode by photolithography. The metal layer for a gate
electrode (not illustrated) may be a single layer of aluminum (Al)
or an aluminum-neodymium (Al--Nd) or a multilayer including an
aluminum alloy stacked on a chromium (Cr) or molybdenum (Mo)
alloy.
[0025] Referring to FIG. 1B, source and drain regions 102s and 102d
are formed by injecting an impurity having an opposite conductivity
type to the impurity injected into the silicon layer into the
source and drain regions 102s and 102d of the semiconductor layer
102, using the gate electrode 106 as a mask. Alternatively, the
source and drain regions may be formed by forming a photoresist
pattern exposing the regions to be source and drain regions and
then injecting an impurity. When the gate electrode 106 is formed
at a location corresponding to the semiconductor layer 102,
channel, source and drain regions 102c, 102s and 102d may be
defined in the semiconductor layer 102 as descried in the following
process.
[0026] Afterward, an interlayer insulating layer 108 is formed on
the entire surface of the substrate 100. The interlayer insulating
layer 108 may be a silicon nitride layer, a silicon oxide layer or
a multilayer thereof.
[0027] Subsequently, source and drain electrodes 110a and 110b
connected to the source and drain regions 102s and 102d through
contact holes (not illustrated) exposing the source and drain
regions 102s and 102d of the semiconductor layer 102 are formed by
etching the interlayer insulating layer 108 and the gate insulating
layer 104. The source and drain electrodes 110a and 110b may be
formed using material such as Mo, Cr, tungsten (W), Al--Nd,
titanium (Ti), MoW and Al. These may be used alone or in a
combination thereof.
[0028] Referring to FIG. 1C, a passivation layer 110 is formed on
the entire surface of the substrate including the source and drain
electrodes 110a and 110b, and a planarization layer 111 is formed
on the passivation layer 110. A first electrode 112 connected to
one of the source and drain electrodes 110a and 110b through a via
hole 111a formed in the planarization layer 111 is then formed. The
first electrode 112 may be a transparent or reflective electrode.
When the first electrode 112 is used as a transparent electrode,
the first electrode 112 may include ITO, IZO, ZnO or
In.sub.2O.sub.3. These may be used alone or in a combination
thereof. In contrary, when the first electrode 112 is used as a
reflective electrode, the first electrode 112 may be formed in a
multilayered structure including a first layer formed including Ag,
Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a combination thereof, and a
second layer including ITO, IZO, ZnO or In.sub.2O.sub.3 on the
first layer.
[0029] After that, a pixel defining layer 114 defining a pixel is
formed on the first electrode 112. Here, the pixel defining layer
114 is formed using a photoresist material, and formed to have a
thickness of about 1,000 .ANG. to 1 .mu.m for proper function.
[0030] A polymer layer 115 is formed on the pixel defining layer
114.
[0031] Here, the polymer layer 115 may be formed using a
fluorine-based polymer selected from materials represented by
Formulae 1 to 3. Alternatively, the polymer layer 115 may be formed
using a functional material containing about 10 to 50%
fluorine.
##STR00004##
(Here, n is an integer of about 50 to 1,000.)
##STR00005##
(Here, m is an integer of about 50 to 1,000, and n is an integer of
about 50 to 1,000.)
##STR00006##
(Here, N is an Integer of about 50 to 1,000.)
[0032] When the polymer layer 115 is formed using the
fluorine-based polymer, the polymer layer 115 may have a coating
effect of a hydrophobic surface. Thus, diffusion of water, organic
materials or other contaminants may be prevented. The
fluorine-based polymer layer 115 may be advantageously formed to
have a thickness of about 100 .ANG. or more for the coating effect.
However, when the polymer layer 115 is too thick, it is difficult
to apply laser ablation to the polymer layer. Thus, the polymer
layer 115 may be advantageously formed to have a thickness of about
3,000 .ANG. or less, and the polymer layer may be formed by
deposition or spin coating.
[0033] Referring to FIG. 1D, pulse-type excimer laser is applied to
a part of the polymer layer 115 to partially remove the pixel
defining layer 114 and the polymer layer 115 by laser ablation,
thereby exposing a part of the first electrode 112.
[0034] When the laser ablation is applied to the polymer layer 115
by radiating the excimer laser, the laser is transmitted through
the polymer layer 115, and is absorbed in the pixel defining layer
114 formed using a photoresist at the laser-irradiated portion,
thereby lifting off the photoresist due to thermal diffusion. Thus,
the polymer layer 115 and the pixel defining layer 114 are
patterned. Here, when the laser is irradiated at an intensity of
about 300 mW/cm.sup.2 or more, the photoresist becomes hydrophilic,
and thus is easily lifted off.
[0035] The surface of the first electrode 112 opened by patterning
is hydrophilic, so that the first electrode 112 may have a better
surface property when an organic layer is formed.
[0036] Referring to FIG. 1E, an organic layer 116 including an
organic emission layer is formed on the opened first electrode 112.
The organic layer 116 may be formed by deposition or laser induced
thermal imaging (LITI).
[0037] A second electrode 118 is then formed on the entire surface
of the substrate 100.
[0038] Here, the second electrode 118 may also be a transparent or
reflective electrode. When the second electrode 118 is a
transparent electrode, the second electrode 118 may include a first
layer formed using Li, Ca, LiF/Ca, LiF/AI, Al, Mg or a combination
thereof and a second layer formed using ITO, IZO, ZnO or
In.sub.2O.sub.3 on the first layer. Here, the second layer may be
an auxiliary electrode or a bus electrode line.
[0039] Alternatively, when the second electrode 118 is a reflective
electrode, the second electrode 118 may be formed using Li, Ca,
LiF/Ca, LiF/AI, Al, Mg or a combination thereof on the entire
surface of the substrate.
[0040] The organic layer 116 located between the first and second
electrodes 112 and 118 may be formed using a small molecule or
polymer organic material.
[0041] The thin film transistors may be flexibly manufactured, and
thus the OLED display device including the thin film transistor may
have flexibility.
[0042] According to an OLED display device and a method of
manufacturing the same of the present invention, a fluorine-based
polymer layer is formed on a pixel defining layer to prevent
diffusion of contaminants such as organic materials and water, and
thus defects generated in fabrication of the OLED display device
may be reduced, a process may be simplified due to an easy
patterning technique and production yield may be effectively
improved.
[0043] Although the present invention has been described with
reference to non-limiting example embodiments thereof, it will be
understood by those skilled in the art that a variety of
modifications and variations may be made to the present invention
without departing from the spirit or scope of the present invention
defined in the appended claims, and their equivalents.
* * * * *