U.S. patent application number 12/623639 was filed with the patent office on 2010-03-18 for chemical vapor deposition reactor having multiple inlets.
Invention is credited to Heng Liu.
Application Number | 20100068381 12/623639 |
Document ID | / |
Family ID | 36927903 |
Filed Date | 2010-03-18 |
United States Patent
Application |
20100068381 |
Kind Code |
A1 |
Liu; Heng |
March 18, 2010 |
CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS
Abstract
A chemical vapor deposition reactor has a wafer carrier which
cooperates with a chamber of the reactor to facilitate laminar flow
of reaction gas within the chamber and a plurality of injectors
configured in flow controllable zones so as to mitigate
depletion.
Inventors: |
Liu; Heng; (Sunnyvale,
CA) |
Correspondence
Address: |
HAYNES AND BOONE, LLP;IP Section
2323 Victory Avenue, Suite 700
Dallas
TX
75219
US
|
Family ID: |
36927903 |
Appl. No.: |
12/623639 |
Filed: |
November 23, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11932293 |
Oct 31, 2007 |
7641939 |
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12623639 |
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11064984 |
Feb 23, 2005 |
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11932293 |
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10621049 |
Jul 15, 2003 |
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11064984 |
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Current U.S.
Class: |
427/255.5 ;
118/728; 118/730 |
Current CPC
Class: |
C30B 25/14 20130101;
C30B 29/40 20130101; C23C 16/45589 20130101; C30B 25/02 20130101;
C30B 29/403 20130101; C23C 16/45508 20130101; C23C 16/45504
20130101; C23C 16/4412 20130101; C23C 16/45574 20130101; C30B
29/406 20130101; C23C 16/4584 20130101 |
Class at
Publication: |
427/255.5 ;
118/728; 118/730 |
International
Class: |
C23C 16/458 20060101
C23C016/458; C23C 16/00 20060101 C23C016/00 |
Claims
1. A chemical vapor deposition reactor comprising: a wafer carrier
which cooperates with a chamber of the reactor to facilitate
laminar flow of reaction gas within the chamber; an inlet disposed
proximate a central portion thereof; and a plurality of injectors
configured so as to mitigate depletion.
2. The chemical vapor deposition reactor as recited in claim 1,
wherein the injectors comprise group III injectors.
3. The chemical vapor deposition reactor as recited in claim 1,
wherein the injectors comprise group III injectors and further
comprising a group V inlet disposed proximate a central portion
thereof.
4. The chemical vapor deposition reactor as recited in claim 1,
wherein the injectors define a plurality of zones, the injectors of
each zone having a dedicated flow controller.
5. The chemical vapor deposition reactor as recited in claim 1,
wherein the injectors define a three zones, the injectors of each
zone having a dedicated flow controller.
6. The chemical vapor deposition reactor as recited in claim 1,
wherein the flow through each zone is individually
controllable.
7. The chemical vapor deposition reactor as recited in claim 1,
wherein the flow through each injector is individually
controllable.
8. The chemical vapor deposition reactor as recited in claim 1,
wherein the reactant concentration through each zone is
individually controllable.
9. The chemical vapor deposition reactor as recited in claim 1,
wherein the reactant concentration through each injector is
individually controllable
10. The chemical vapor deposition reactor as recited in claim 1,
wherein the exhaust is above the wafer carrier
11. The chemical vapor deposition reactor as recited in claim 1,
wherein the wafer carrier comprises a rotating wafer carrier.
12. The chemical vapor deposition reactor as recited in claim 1,
wherein the injectors are configured such that Group III gas
reactant is injected into the chamber over substantially an entire
top of the chamber so as to mitigate depletion.
13. The chemical vapor deposition reactor as recited in claim 1,
wherein the wafer carrier rotates within a chamber of the reactor
and cooperates with the chamber to facilitate laminar flow of
reaction gas within the chamber; wherein gas is added to the
chamber via an inlet disposed proximate a central portion thereof;
and wherein a gas reactant is injected into the chamber via
plurality of injectors configured so as to mitigate depletion.
14. The method as recited in claim 1, wherein the gas injected into
the chamber via the injectors comprises group III reactants.
15. The method as recited in claim 1, wherein the gas injected into
the chamber via the injectors comprises group III reactants and the
gas added to the chamber via the inlet comprises a group V
reactant.
16. A chemical vapor deposition reactor system comprising: a
plurality of chambers; a rotatable wafer carrier disposed within
each of the chambers; and a common reactant gas supply configured
to controllably provide substantially the same gas mixture to each
chamber independently of each other.
17. The chemical vapor deposition reactor system as recited in
claim 16, further comprising a common gas exhaust system for the
chambers.
18. The chemical vapor deposition reactor system as recited in
claim 16, further comprising gas flow controllers that facilitate
control of an amount of gas provided to the chambers.
19. The chemical vapor deposition reactor system as recited in
claim 16, wherein gas is supplied to the chambers
simultaneously.
20. The chemical vapor deposition reactor system as recited in
claim 16, wherein the amount of gas provided to the chambers is
different for each chamber.
21. The chemical vapor deposition reactor system as recited in
claim 16, wherein each chamber further comprises a narrow flow
channel formed intermediate the chamber and the wafer carrier, a
gas inlet located at a top of the chamber, a gas exit above the
wafer carrier, a sealing ring around the wafer carrier to
facilitate flow laminarly to the exhaust system and to define a
heater chamber.
22. The chemical vapor deposition reactor system as recited in
claim 16, wherein each chamber is a comparatively small
chamber.
23. The chemical vapor deposition reactor system as recited in
claim 16, wherein each chamber defines a seven wafer reactor.
24. A method for chemical vapor deposition, the method comprising:
rotating wafer carriers within a plurality of corresponding
chambers of a reactor; and controllably supplying a common reactant
gas to each chamber independently of each other.
25. The method of claim 24, further comprising removing the common
reactant gas from the chambers via a common gas exhaust system.
26. The method of claim 24, wherein the supplying further comprises
supplying gas to each chamber at different flows.
27. The method of claim 24, wherein the supplying further comprises
supplying gas to each chamber simultaneously.
28. The method of claim 24, wherein the supplying further comprises
controlling an amount of gas provided to each chamber.
29. The method of claim 24, wherein the method is applied to growth
of different materials including group III-nitride, all other group
III-V compounds, oxides, nitrides or group V epitaxy.
Description
CROSS REFERENCES
[0001] This patent application is a continuation of patent
application Ser. No. 11/932,293, filed on Oct. 31, 2007 which is a
continuation of patent application of co-pending patent application
Ser. No. 11/064,984, filed Feb. 23, 2005 which is a
continuation-in-part (CIP) patent application of now abandoned
patent application Ser. No. 10/621,049, filed Jul. 15, 2003 and
entitled CHEMICAL VAPOR DEPOSITION REACTOR, the entire contents of
which are hereby incorporated explicitly by reference.
FIELD OF THE INVENTION
[0002] The present invention relates generally to chemical vapor
deposition (CVD) reactors, such as those used for group III-V
semiconductor epitaxy. The present invention relates more
particularly to a CVD reactor that is configured to provide laminar
flow of reactant gases while mitigating undesirable depletion of
reactants, so as to achieve enhanced deposition uniformity.
BACKGROUND OF THE INVENTION
[0003] Metal organic chemical vapor deposition (MOCVD) of group
III-V compounds is a thin film deposition process utilizing a
chemical reaction between a periodic table group III organic metal
and a periodic table group V hydride. Various combinations of group
III organic metal and group V hydride are possible.
[0004] This process is commonly used in the fabrication of
semiconductor devices, such as light emitting diodes (LEDs). The
process usually takes place in a chemical vapor deposition (CVD)
reactor. CVD reactor design is a critical factor in achieving the
high quality films that are required for semiconductor
fabrication.
[0005] In general, the gas flow dynamics for high quality film
deposition favor laminar flow. Laminar flow, as oppose to
convective flow, is required to achieve high growth efficiency and
uniformity. Several reactor designs are commercially available to
provide laminar growth condition on a large scale, i.e., high
throughput. These designs include the rotating disk reactor (RDR),
the planetary rotating reactor (PRR) and the close-coupled
showerhead (CCS).
[0006] However, such contemporary reactors suffer from inherent
deficiencies which detract from their overall desirability,
particularly with respect to high pressure and/or high temperature
CVD processes. Such contemporary reactors generally work well at
low pressures and relatively low temperatures (such as 30 ton and
700.degree. C., for example). Therefore, they are generally
suitable for growing GaAs, InP based compounds.
[0007] However, when growing group III nitride based compounds
(such as GaN, AlN, InN, AlGaN, and InGaN), there are factors that
become important when using such contemporary reactors. Unlike GaAs
or InP based material, group III Nitride is preferably grown at
substantially higher pressures and temperatures (generally greater
that 500 ton and greater than 1000.degree. C.). When using the
aforementioned reactor designs under high pressure and temperature
conditions, heavy thermal convection inherently occurs. Such
thermal convection undesirably interferes with the growth process,
so as to degrade efficiency and yield.
[0008] This situation worsens when the gas phase is majority
ammonia. Ammonia is commonly used as nitrogen source in the III
nitride MOCVD process. Ammonia is much more viscous than hydrogen.
When the ambient gas contains a high percentage of ammonia, thermal
convection occurs more easily than when the ambient gas is majority
hydrogen, which is the case for GaAs or InP based MOCVD growth.
Thermal convection is detrimental to growing high quality thin
films since hard-to-control complex chemical reactions occur due to
the extended duration of the presence of reactant gases in the
growth chamber. This inherently results in a decrease in growth
efficiency and poor film uniformity.
[0009] According to contemporary practice, a large gas flow rate is
typically utilized in order to suppress undesirable thermal
convection. In the growth of group III nitride, this is done by
increasing the ambient gas flow rate, wherein the gas is typically
a mixture of ammonia with either hydrogen or nitrogen. Therefore,
high consumption of ammonia results, particularly at high growth
pressure conditions. This high consumption of ammonia results in
the corresponding high costs.
[0010] Reaction between source chemicals in the gas phase is
another important issue in the contemporary MOCVD process for
growth of GaN. This reaction also occurs in the growth of other
group III-Nitrides, such as AlGaN and InGaN. Gas phase reaction is
usually not desirable. However, it is not avoidable in the group
III nitride MOCVD process because the reaction is severe and
fast.
[0011] When the group III alkyls (such as trimethylgallium,
trimethylindium, trimethylaluminum) encounter ammonia, a reaction
occurs almost immediately, resulting in the undesirable formation
of adducts
[0012] Usually, when these reactions occur after all the source
gases enter the growth chamber, the adducts produced will
participate in the actually growth process. However, if the
reactions happen before or near the gas entrance of the growth
chamber, the adducts produced will have an opportunity to adhere to
the solid surface. If this happens, the adducts which adhere to the
surface will act as gathering centers and more and more adduct will
consequently tend to accumulate. This process will eventually
deplete the sources, thereby making the growth process undesirably
vary between runs and/or will clog the gas entrance.
[0013] An efficient reactor design for III-nitride growth does not
avoid gas phase reaction, but rather controls the reaction so that
it does not create such undesirable situations.
[0014] Because the demand for GaN based blue and green LEDs have
increased dramatically in recent years, throughput requirements
from production reactors has become important. The contemporary
approach to scale up production is typically to build larger
reactors. The number of wafers produced during each run has
increased from 6 wafers to more than 20 wafers, while maintaining
same number of runs per day, in currently available commercial
reactors.
[0015] However, when a reactor is scaled up this way, several new
issues arise. Because thermal convection is as severe (or even more
sever) in a larger reactor as in a smaller reactor, film
uniformity, as well as wafer-to-wafer uniformity, are not any
better (and may be much worse). Further, at higher growth
pressures, a very high gas flow rate is needed to suppress thermal
convection. The amount of gas flow needed is so high that
modification and special considerations are required for the gas
delivery system.
[0016] Additionally, because of the high temperature requirements,
the larger mechanical parts of such a scaled up (larger) reactor
are inherently placed under higher thermal stress and consequently
tend to break prematurely. In almost all reactor constructions,
stainless steel, graphite and quartz are the most commonly used
materials. Because of hydrogenation of the metals utilized (making
them become brittle) and because of etching of graphite by ammonia
at high temperatures, the larger metal and graphite parts tend to
break down much sooner than the corresponding parts of smaller
reactors. Larger quartz parts also become more susceptible to
breakage because higher thermal stress.
[0017] Another issue associated with large size reactors is the
difficulty in maintaining high temperature uniformity. Thickness
and composition uniformity can be immediately affected by the
temperature uniformity of the wafer carrier surface. In large size
reactors, temperature uniformity is achieved by using a multi-zone
heating configuration that is complex in design. The reliability of
the heater assembly is usually poor due to the aforementioned high
thermal stress and ammonia degradation. These issues of process
inconsistency and extensive hardware maintenance have a significant
impact on production yield and therefore product cost.
[0018] Referring now to FIG. 1, an example of a contemporary RDR
reactor for use in GaN epitaxy is shown schematically. The reaction
chamber has a double-walled water-cooled 10'' cylinder 11, a flow
flange 12 where all the reaction or source gases are distributed
and delivered into chamber 13, a rotation assembly 14 that spins
the wafer carrier 16 at several hundreds of rotations per minute, a
heater 17 assembly underneath the spinning wafer carrier 16
configured to heat wafers 10 to desired process temperatures, a
pass through 18 to facilitate wafer carrier transfer in and out of
the chamber 13, and an exhaust 19 at the center of the bottom side
of the chamber 13. An externally driven spindle 21 effects rotation
of the wafer carrier 16. The wafer carrier 16 comprises a plurality
of pockets, each of which is configured to contain a wafer 10.
[0019] The heater 17 comprises two sets of heating elements. An
inner set of heating elements 41 heats the central portion of the
wafer carrier 16 and an outer set of heating elements 42 heats the
periphery of the wafer carrier 16. Because the heater 17 is inside
of the chamber 13, it is exposed to the detrimental effects of the
reaction gases.
[0020] The spindle rotates the wafer carrier at between 500 and
1000 rpm.
[0021] As discussed previously, this design works well at lower
pressures and temperatures, especially when the ambient gas is low
viscosity. However, when growing GaN at high pressures and
temperatures in a high ammonia ambient gas, then thermal convection
occurs and gas flow tends to be undesirably turbulent.
[0022] Referring now to FIG. 2, a simplified gas streamline is
shown to illustrate this turbulence. It is clear that turbulence
increase as the size of the chamber and/or the distance between the
wafer carrier and the top of the chamber increases. When the design
of FIG. 1 is scaled up for higher throughput, the chamber 13, as
well as the wafer carrier 16, is enlarged to support and contain
more wafers.
[0023] Gas recirculation cells 50 tend to form when there is
turbulence in the ambient gas. As those skilled in the art will
appreciate, such recirculation is undesirable because it results in
undesirable variations in reactant concentration and temperature.
Further, such recirculation generally results in reduced growth
efficiency due to ineffective use of the reactant gas.
[0024] Further, more heating zones are required in a larger
reactor. This, of course, undesirably complicates the construction
of such larger reactors and increases the cost thereof.
[0025] Referring now to FIGS. 3A and 3B, a comparison between a 7''
six pocket wafer carrier 16a (which supports six wafers as shown in
FIG. 3A) and a 12'' twenty pocket wafer carrier 16b (which supports
twenty wafers as shown in FIG. 3b) can easily be made. Each pocket
22 supports a single 2'' round wafer. From this comparison, it is
clear that such scaling up of a reactor to accommodate more wafers
greatly increases the size, particularly the volume, thereof. This
increase in the size of the reactor results in the undesirable
effects of thermal convection and the additional complexities of
construction discussed above.
[0026] It is well known, however, that the depletion effect is one
major drawback in contemporary horizontal reactors. As reactants in
the carrier gas proceed from the center toward the peripheral of
the rotating disk, a substantial amount of the reactants is
consumed along the way. This undesirably makes the thin film
deposited thinner and thinner along the radial direction upon the
wafer.
[0027] One contemporary approach to reduce the depletion effect is
to use a high gas flow rate to reduce the concentration gradient
along the radial direction. The drawback of this approach is an
inherent decrease in growth efficiency.
[0028] In view of the foregoing, it is desirable to provide a
reactor which is not substantially susceptible to the undesirable
effects of thermal convection and which can easily and economically
be scaled up so as to increase throughput. It is further desirable
to provide a reactor which has enhanced growth efficiency (such as
by providing mixing of reactant gases immediately proximate a
growth region of the wafers and by assuring intimate contact of the
reactant gases with the growth region). It is yet further desirable
to provide a reactor wherein the heater is outside of the chamber
thereof, and is thus not exposed to the detrimental effects of the
reaction gases. It is yet further desirable to mitigate the
undesirable effects of depletion while maintaining growth
efficiency, so as to provide enhanced deposition uniformity over
the entire wafer.
SUMMARY OF THE INVENTION
[0029] While the apparatus and method has or will be described for
the sake of grammatical fluidity with functional explanations, it
is to be expressly understood that the claims, unless expressly
formulated under 35 USC 112, are not to be construed as necessarily
limited in any way by the construction of "means" or "steps"
limitations, but are to be accorded the full scope of the meaning
and equivalents of the definition provided by the claims under the
judicial doctrine of equivalents, and in the case where the claims
are expressly formulated under 35 USC 112 are to be accorded full
statutory equivalents under 35 USC 112.
[0030] The present invention specifically addresses and alleviates
the above mentioned deficiencies associated with the prior art.
More particularly, according to one aspect, the present invention
comprises a chemical vapor deposition reactor comprising a
rotatable wafer carrier which cooperates with a chamber of the
reactor to facilitate laminar flow of reaction gas within the
chamber.
[0031] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a rotatable wafer
carrier which is sealed at a periphery thereof to a chamber of the
reactor such that laminar flow within the chamber is
facilitated.
[0032] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a chamber and a
rotatable wafer carrier disposed within the chamber, the wafer
carrier being configured so as to enhance outward flow of reaction
gas within the chamber.
[0033] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a rotatable wafer
carrier and a reaction chamber, a bottom of the reaction chamber
being substantially defined by the wafer carrier.
[0034] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a chamber, a wafer
carrier disposed within the chamber, and a heater disposed outside
of the chamber, the heater being configured to heat the wafer
carrier.
[0035] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a plurality of
chambers and at least one of a common reactant gas supply system
and a common gas exhaust system.
[0036] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a wafer carrier
configured such that reactant gas does not flow substantially below
the wafer carrier.
[0037] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a chamber, a wafer
carrier, a gas inlet located generally centrally within the
chamber, and at least one gas outlet formed in the chamber entirely
above an upper surface of the wafer carrier so as to enhance
laminar gas flow through the chamber.
[0038] According to another aspect, the present invention comprises
a chemical vapor deposition reactor comprising a plurality of
injectors configured so as to mitigate depletion. More
particularly, a chemical vapor deposition reactor comprises a wafer
carrier which cooperates with a chamber of the reactor to
facilitate laminar flow of reaction gas within the chamber and also
comprises a plurality of injectors configured so as to mitigate
depletion.
[0039] The chemical vapor deposition reactor can comprise an inlet
disposed proximate a central portion thereof. The injectors can
comprise group III injectors. The inlet can comprise a group V
inlet.
[0040] The injectors can define a plurality of zones and each zone
can have a dedicated flow controller. For example, the injectors
can define three zones, the injectors of each zone having a
dedicated flow controller.
[0041] The flow through each zone can be individually controllable.
Additionally, the flow through each injector can optionally be
individually controllable. Further, the reactant concentration
through each zone can be individually controllable. Additionally,
the reactant concentration through each injector can optionally be
individually controllable.
[0042] According to another aspect, the present invention comprises
a method for chemical vapor deposition comprising injecting
reactant gas into a reactor chamber in a manner that mitigates
depletion. More particularly, the method can comprise rotating a
wafer carrier within a chamber of a reactor, the wafer carrier
cooperating with the chamber to facilitate laminar flow of reaction
gas within the chamber; and injecting a gas reactant into the
chamber via plurality of injectors configured so as to mitigate
depletion.
[0043] Gas, such as a group V reactant, e.g., NH.sub.3, can be
added to the chamber via an inlet disposed proximate a central
portion thereof. The gas injected into the chamber via the
injectors can comprise group III reactants.
[0044] The gas flow through groups of controllers (such as
corresponding to the zones) can be controlled. The flow can be
controlled based upon which one of a plurality of zones the
injectors are located within.
[0045] Thus, according to one aspect, the present invention
comprises a lid for a chemical vapor deposition reactor, wherein
the lid comprises or is configured to comprise a plurality of
injectors.
[0046] These, as well as other advantages of the present invention,
will be more apparent from the following description and drawings.
It is understood that changes in the specific structure shown and
described may be made within the scope of the claims, without
departing from the spirit of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0047] The invention and its various embodiments can now be better
understood by turning to the following detailed description of the
preferred embodiments which are presented as illustrated examples
of the invention defined in the claims. It is expressly understood
that the invention as defined by the claims may be broader than the
illustrated embodiments described below.
[0048] FIG. 1 is a semi-schematic cross-sectional side view of a
contemporary reactor showing reaction gas being introduced
thereinto in a dispersed fashion via a flow flange and showing the
gas being exhausted from the chamber via a gas outlet disposed
below the wafer carrier;
[0049] FIG. 2 is a semi-schematic cross-sectional side view of a
contemporary reactor showing undesirable convection caused
re-circulation of reaction gas within the chamber, wherein the
re-circulation is facilitated by the comparatively large distance
between the top of the chamber and the wafer carrier;
[0050] FIG. 3A is a semi-schematic top view of a wafer carrier
which is configured so as to support six wafers within a
reactor;
[0051] FIG. 3B is a semi-schematic top view of a wafer carrier
which is configured so as to support twenty wafers within a
reactor;
[0052] FIG. 4 is a semi-schematic cross-sectional side view of a
reactor having a comparatively small distance between the top of
the chamber and the wafer carrier and having a single comparatively
small gas inlet disposed generally centrally with respect to the
wafer carrier according to the present invention;
[0053] FIG. 5 is a semi-schematic cross-sectional side view of an
alternative configuration of the reactor of FIG. 4, having a
plurality of reaction gas outlets disposed entirely above the upper
surface of the wafer carrier and in fluid communication with a ring
diffuser so as to enhance laminar gas flow, having a seal disposed
between the wafer carrier and the chamber, and having a heater
disposed outside of the chamber along with a heater gas purge so as
to mitigate the effects of reactant gas upon the heater, according
to the present invention;
[0054] FIG. 6A is a semi-schematic cross-sectional top view of the
reactor of FIG. 5, showing a three pocket wafer carrier, the seal
between the wafer carrier and the chamber, the diffuser, and the
reaction gas outlets;
[0055] FIG. 6B is a semi-schematic perspective side view of the
diffuser of FIGS. 5 and 6A showing a plurality of apertures formed
in the inner surface and the outer surface thereof;
[0056] FIG. 7 is a semi-schematic cross-sectional side view of an
alternative configuration of the reactor of FIG. 5, having a
separate alkyl inlet and a separate ammonia inlet providing
reaction gas to a carrier gas;
[0057] FIG. 8 is a semi-schematic cross-sectional side view of an
alternative configuration of the reactor of FIG. 5, having an
ammonia inlet disposed generally concentrically within an
alkyl/carrier gas inlet;
[0058] FIG. 9 is a semi-schematic perspective side view of a
comparatively large, scaled up RDR reactor having a twenty-one
wafer capacity and having a plurality of reaction gas inlets;
[0059] FIG. 10 is a semi-schematic perspective side view of a
reactor system having three comparatively small reactors (each of
which has a seven wafer capacity such that the total capacity is
equal to that of the comparative large reactor of FIG. 9) which
share a common reaction gas supply system and a common reaction gas
exhaust system.
[0060] FIG. 11 is a semi-schematic, cross-sectional side view of a
reactor having a plurality of gas inlets formed so as to define a
plurality of zones; and
[0061] FIG. 12 is a semi-schematic top view of the lid of the
reactor of FIG. 11, better showing how the plurality of gas inlets
define a plurality of zones.
DETAILED DESCRIPTION OF THE EMBODIMENT(S)
[0062] Many alterations and modifications may be made by those
having ordinary skill in the art without departing from the spirit
and scope of the invention. Therefore, it must be understood that
the illustrated embodiment has been set forth only for the purposes
of example and that it should not be taken as limiting the
invention as defined by the following claims. For example,
notwithstanding the fact that the elements of a claim are set forth
below in a certain combination, it must be expressly understood
that the invention includes other combinations of fewer, more or
different elements, which are disclosed in above even when not
initially claimed in such combinations.
[0063] The words used in this specification to describe the
invention and its various embodiments are to be understood not only
in the sense of their commonly defined meanings, but to include by
special definition in this specification structure, material or
acts beyond the scope of the commonly defined meanings. Thus if an
element can be understood in the context of this specification as
including more than one meaning, then its use in a claim must be
understood as being generic to all possible meanings supported by
the specification and by the word itself.
[0064] The definitions of the words or elements of the following
claims are, therefore, defined in this specification to include not
only the combination of elements which are literally set forth, but
all equivalent structure, material or acts for performing
substantially the same function in substantially the same way to
obtain substantially the same result. In this sense it is therefore
contemplated that an equivalent substitution of two or more
elements may be made for any one of the elements in the claims
below or that a single element may be substituted for two or more
elements in a claim. Although elements may be described above as
acting in certain combinations and even initially claimed as such,
it is to be expressly understood that one or more elements from a
claimed combination can in some cases be excised from the
combination and that the claimed combination may be directed to a
subcombination or variation of a subcombination.
[0065] Insubstantial changes from the claimed subject matter as
viewed by a person with ordinary skill in the art, now known or
later devised, are expressly contemplated as being equivalently
within the scope of the claims. Therefore, obvious substitutions
now or later known to one with ordinary skill in the art are
defined to be within the scope of the defined elements.
[0066] The claims are thus to be understood to include what is
specifically illustrated and described above, what is
conceptionally equivalent, what can be obviously substituted and
also what essentially incorporates the essential idea of the
invention.
[0067] Thus, the detailed description set forth below in connection
with the appended drawings is intended as a description of the
presently preferred embodiment(s) of the invention and is not
intended to represent the only form(s) in which the present
invention may be constructed or utilized The description sets forth
the functions and the sequence of steps for constructing and
operating the invention in connection with the illustrated
embodiment(s). It is to be understood, however, that the same or
equivalent functions may be accomplished by different embodiments
that are also intended to be encompassed within the spirit of the
invention.
[0068] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a rotatable wafer
carrier which cooperates with a chamber of the reactor to
facilitate laminar flow of reaction gas within the chamber.
[0069] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a rotatable wafer
carrier which is sealed at a periphery thereof to a chamber of the
reactor such that laminar flow within the chamber is
facilitated.
[0070] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a chamber and a
rotatable wafer carrier disposed within the chamber, the wafer
carrier being configured so as to enhance outward flow of reaction
gas within the chamber.
[0071] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a rotatable wafer
carrier and a reaction chamber, a bottom of the reaction chamber
being substantially defined by the wafer carrier.
[0072] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a chamber, a wafer
carrier disposed within the chamber, and a heater disposed outside
of the chamber, the heater being configured to heat the wafer
carrier.
[0073] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a plurality of
chambers and at least one of a common reactant gas supply system
and a common gas exhaust system.
[0074] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a wafer carrier
configured such that reactant gas does not flow substantially below
the wafer carrier.
[0075] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a chamber, a wafer
carrier, a gas inlet located generally centrally within the
chamber, and at least one gas outlet formed in the chamber entirely
above an upper surface of the wafer carrier so as to enhance
laminar gas flow through the chamber.
[0076] According to one aspect, the present invention comprises a
chemical vapor deposition reactor comprising a chamber, a wafer
carrier disposed within the chamber and cooperating with a portion
(for example, the top) of the chamber to define a flow channel, and
a shaft for rotating the wafer carrier. A distance between the
wafer carrier and the portion of the chamber is small enough to
effect generally laminar flow of gas through the flow channel.
[0077] Preferably, the distance between the wafer carrier and the
portion of the chamber is small enough for centrifugal force caused
by rotation of the wafer carrier to effect outward movement of gas
within the channel Preferably, the distance between the wafer
carrier and the portion of the chamber is small enough that a
substantial portion of the reactants in the reaction gas contact a
surface of a wafer prior to exiting the chamber. Preferably, the
distance between the wafer carrier and the portion of the chamber
is small enough that most of the reactants in the reaction gas
contact a surface of a wafer prior to exiting the chamber.
Preferably, the distance between the wafer carrier and the portion
of the chamber is small enough to mitigate thermal convection
intermediate the chamber and the wafer carrier.
[0078] Preferably, the distance between the wafer carrier and the
portion of the chamber is less than approximately 2 inches.
Preferably, the distance between the wafer carrier and the portion
of the chamber is between approximately 0.5 inch and approximately
1.5 inches. Preferably, the distance between the wafer carrier and
the portion of the chamber is approximately 0.75 inch.
[0079] Preferably, a gas inlet formed above the wafer carrier and
generally centrally with respect thereto.
[0080] Preferably, the chamber is defined by a cylinder.
Preferably, the chamber is defined by a cylinder having one
generally flat wall thereof defining a top of the chamber and the
reaction gas inlet in located at approximately a center of the top
of the chamber. However, those skilled in the art will appreciate
that the chamber may alternatively be defined by any other desired
geometric shape. For example, the chamber may alternatively be
defined by a cube, a box, a sphere, or an ellipsoid.
[0081] Preferably, the chemical vapor the wafer carrier is
configured to rotate about an axis thereof and the reaction gas
inlet is disposed generally coaxially with respect to the axis of
the wafer carrier.
[0082] Preferably, the reaction gas inlet has a diameter which is
less that 1/5 of a diameter of the chamber. Preferably, the
reaction gas inlet has a diameter which is less than approximately
2 inches. Preferably, the reaction gas inlet has a diameter which
is between approximately 0.25 inch and approximately 1.5 inch
[0083] Thus, the reaction gas inlet is sized so as to cause
reaction gas to flow generally from a center of the wafer carrier
to a periphery thereof in a manner that results in substantially
laminar reaction gas flow. In this manner convection currents are
mitigated and reaction efficiency is enhanced.
[0084] Preferably, the reaction gas is constrained to flow
generally horizontally within the chamber. Preferably, the reaction
gas is constrained to flow generally horizontally through the
channel. Preferably, the reaction gas is caused to flow outwardly
at least partially by a rotating wafer carrier.
[0085] Preferably, the at least one reaction gas outlet formed in
the chamber above a wafer carrier. Preferably, a plurality of
reaction gas outlets is formed in the chamber entirely above the
upper surface of the wafer carrier. Increasing the number of
reaction gas outlet(s) enhances laminar flow of the reaction gas,
particularly at the periphery of the wafer carrier, by facilitating
radial flow of the reaction gas (by providing more straight line
paths for gas flow from the center of the wafer carrier to the
periphery thereof). Forming the reaction gas outlets entirely above
the upper surface of the wafer carrier mitigates undesirable
turbulence in the reaction gas flow resulting from the reaction gas
flowing over an edge of the wafer carrier.
[0086] Thus, at least one reaction gas outlet is preferably formed
in the chamber above a wafer carrier and below a top of the
chamber.
[0087] The chemical vapor deposition reactor preferably comprises a
reaction gas inlet formed generally centrally within the chamber
and at least one reaction gas outlet formed in the chamber. The
wafer carrier is disposed within the chamber below the gas
outlet(s) so as to define a flow channel intermediate a top of the
chamber and the wafer carrier such that reaction gas flows into the
chamber through the reaction gas inlet, through the chamber via the
flow channel, and out of the chamber via the reaction gas
outlet.
[0088] A ring diffuser is preferably disposed proximate a periphery
of the wafer carrier and configured so as to enhance laminar flow
from the reaction gas inlet to the reaction gas outlet. The wafer
carrier is disposed within the chamber below the gas outlets so as
to define a flow channel intermediate a top of the chamber and the
wafer carrier such that reaction gas flows into the chamber through
the reaction gas inlet, through the chamber via the flow channel,
and out of the chamber via the reaction gas outlet.
[0089] The ring diffuser preferably comprises a substantially
hollow annulus having an inner surface and an outer surface, a
plurality of openings formed in the inner surface, and a plurality
of openings form in the outer surface. The openings in the inner
surface enhance uniformity of reaction gas flow over the wafer
carrier.
[0090] The openings in the inner surface are preferably configured
so as to create enough restriction to reaction gas flow
therethrough so as to enhance a uniformity of reaction gas flow
over the wafer carrier.
[0091] The ring diffuser is preferably comprised of a material
which is resistant to deterioration caused by heated ammonia. For
example, the ring diffuser may be formed of SiC coated graphite,
SiC, quartz, or molybdenum.
[0092] According to one aspect of the present invention, a ring
seal is disposed intermediate the wafer carrier and the chamber.
The ring seal is configured to mitigate reaction gas flow out of
the chamber other than from the reaction gas outlet. The ring seal
preferably comprises either graphite, quartz, or SiC.
[0093] According to one aspect of the present invention, a heater
assembly is disposed outside of the chamber and proximate the wafer
carrier. The heater may be an induction heater, a radiant heater,
or any other desired type of heater. Preferably, a heater purge
system is configured to mitigate contact of reaction gas with the
heater.
[0094] Typically, a gas flow controller is configured to control
the amount of reactant gases introduced into the chamber via the
gas inlet port.
[0095] The wafer carrier is preferably configured to support at
least three 2 inch round wafers. However, the wafer carrier may
alternatively be configured so as to support any desired number of
wafers, any desired size of wafers, and any desired shape of
wafers.
[0096] According to one aspect of the present invention, the wafer
carrier is configured so as to facilitate outward flow of reaction
gas due to centrifugal force. Thus, the wafer carrier preferably
comprises a rotating wafer carrier. The wafer carrier is preferably
configured to rotate at greater than approximately 500 rpm. The
wafer carrier is configured to rotate at between approximately 100
rpm and approximately 1500 rpm. The wafer carrier is preferably
configured to rotate at approximately 800 rpm.
[0097] The apparatus and method of the present invention may be
used to form wafers, from which a variety of different
semiconductor devices may be formed. For example, the wafers may be
used to form die from which LEDs are fabricated.
[0098] The present invention is illustrated in FIGS. 1-10, which
depict presently preferred embodiments thereof. The present
invention relates to a chemical vapor deposition (CVD) reactor and
an integrated multi-reactor system which is suitable for scaled up
throughput. The reactor employs a geometry that substantially
suppresses thermal convection, a gas injection scheme providing
very high gas velocity to avoid adduct adhesion to surface, and a
restricted growth zone to enhance growth efficiency (by reducing
source gas consumption).
[0099] For high throughput configurations, multiple units of said
reactor can be integrated. Each reactor in the multiple-unit
configuration can be of a relatively small scale in size, so that
the mechanical construction can be simple and reliable. All
reactors share common gas delivery, exhaust and control systems so
that cost is similar to the larger conventional reactor with the
same throughput.
[0100] The throughput scaling up concept is independent with
respect to reactor design and can also be applied to various other
reactor designs. In theory, there is no limit in how many reactors
can be integrated in one system. But as a practical matter, the
maximum number of reactors integrated is substantially limited by
how the gas delivery system is configured. Both reactor design and
the scaling up concept can also be applied to the growth of various
different materials, and thus includes but is not limited to group
III-nitride, all other group III-V compounds, oxides, nitrides, and
group V epitaxy.
[0101] Referring now to FIG. 4, a reactor 100 has a narrow gas
inlet 112 located at the top and center of the reactor cylinder
111. The cylinder 111 is double walled and water cooled, like the
reactor shown in FIG. 1. The temperature of the water can be varied
so as to control the temperature of the chamber 113. A narrow gas
channel 130 defined by the wafer carrier 116 and the top 131 of the
reactor 100 directs gas outwardly.
[0102] Pockets formed in the wafer carrier 116 are configured to
receive and support wafers 110, such as 2 inch wafers suitable for
use in the fabrication of LEDs.
[0103] The rotating wafer carrier 116 assists gas flow outwardly by
its centrifugal force. The rotating wafer carrier 116 preferably
rotates at between 10 and 1500 rpm. As those skilled in the art
will appreciate, higher rotational speeds of the wafer carrier 116
typically result in greater centrifugal force being applied to the
reaction gas.
[0104] By introducing the gas from the center, the gas is forced to
flow generally horizontally in the narrow channel 130, making the
growth process somewhat simulate a horizontal reactor. As those
skilled in the art will appreciate, one advantage of a horizontal
reactor is its higher growth efficiency. This is because all the
reactants in a horizontal reactor are restricted to a much narrower
volume, thus making the reactants more efficient in their contact
with the growing surface.
[0105] Preferably, the reaction gas inlet has a diameter, dimension
A, which is less that 1/5 of a diameter of the chamber. Preferably,
the reaction gas inlet has a diameter which is less than
approximately 2 inches. Preferably, the reaction gas inlet has a
diameter which is between approximately 0.25 inch and approximately
1.5 inch.
[0106] Unlike the use of additional gas flow to suppress thermal
convection in the vertical type of reactor such as the RDR as shown
in FIG. 2, the suppression of thermal convection is accomplished by
using the narrow flow channel 130, so that gas flow is forced in
the desired direction.
[0107] The distance between the upper surface of the wafer carrier
116 and the top of the chamber 111 is designated as dimension B.
Dimension B is preferably less than approximately 2 inch. Dimension
B is preferably between approximately 0.5 inch and approximately
1.5 inch. Dimension B is preferably approximately 0.75 inch.
[0108] As discussed above, the depletion effect is one major
drawback in horizontal reactors. As reactants in the carrier gas
proceed from the center toward the peripheral of the rotating disk,
a substantial amount of the reactants is consumed along the way,
making the thin film deposited thinner and thinner along the radial
direction upon the wafer.
[0109] According to the present invention, growth efficiency is
improved by using a comparatively high wafer carrier rotation rate,
so that the centrifugal force generated by the rotation of the
wafer carrier enhances the gas speed over the wafers without using
higher gas flow rate.
[0110] Referring now to FIG. 5, gas flow resistance can be reduced,
so that a higher degree of laminar flow is produced, by forming the
reaction gas outlet(s) such that they are entirely above the upper
surface of the wafer carrier. By forming the gas outlet entirely
above the upper surface of the wafer carrier 116, a more direct
route (and thus less contorted) for the reaction gas from the gas
inlet 112 to the gas outlet 119 is provided. As those skilled in
the art will appreciate, the more direct and the less contorted the
route of the reaction gas, the less turbulent (and more laminar)
its flow will be.
[0111] By adding a ring seal 132 around the rotating wafer carrier
116 to bridge the flow channel 130 of the exhaust gas flow, flow
resistance is reduced and laminar flow substantially enhanced. This
is because a change of gas flow direction at the wafer carrier's
edge is eliminated. The ring seal 132 can be made of quartz,
graphite, SiC or other durable materials for suitable for the
reactor's environment.
[0112] In order to achieve even pumping of exhaust gas (and thus
more laminar flow), a ring shaped diffuser 133 (better shown in
FIGS. 6A and 6B) can be used. The ring shaped diffuser 133
effectively makes almost the entire periphery of the reactor,
proximate the periphery of the wafer carrier 132, one generally
continuous gas outlet port.
[0113] A heater 117 is disposed outside of the chamber (which is
that portion of the reactor within which reaction gas readily
flows). The heater is disposed beneath the wafer carrier 116. Since
the ring seal 132 mitigates reaction gas flow beneath the wafer
carrier 116, the heater is not substantially exposed to reaction
gas and thus is not substantially degraded thereby.
[0114] Preferably, a heater purge 146 is provided so as to purge
any reaction gas that leaks past the ring seal 132 into the area
beneath the wafer carrier.
[0115] Referring now to FIG. 6A, four pumping ports or gas outlets
119 are in fluid communication with the diffuser 133. All of the
gas outlets 119 are preferably connected to a common pump.
[0116] The ring seal 132 bridges the gap between the wafer carrier
116 and the chamber 111, so as to facilitate laminar flow of
reaction gas, as discussed above.
[0117] Referring now to FIG. 6B, the diffuser 133 comprises a
plurality of inner apertures 136 and a plurality of outer apertures
137. As those skilled in the art will appreciate, the greater the
number of inner apertures 136 that there are, the more nearly the
inner apertures approximate a single continuous opening. Of course,
the more nearly the inner apertures approximate a single continuous
opening, the more laminar the gas flow through the chamber.
[0118] The diffuser 133 preferably comprises at least as many outer
apertures as there are gas outlet ports (there are, for example,
four gas outlet ports 119 shown in FIG. 5A).
[0119] The diffuser 133 is preferably made of graphite, SiC coated
graphite, solid SiC, quartz, molybdenum, or other material that
resist hot ammonia. Those skilled in the art will appreciate that
various materials are suitable.
[0120] The size of the holes in the diffuser 133 can be made small
enough to create slight restriction to the gas flow so that more
even distribution to the exhaust can be achieve. However, the hole
size should not be made so small that clogging is likely to occur,
since reaction product contains vapor and solid particulate that
may adhere to or condense upon the diffuser holes.
[0121] Referring now to FIGS. 7 and 8, the reactant gas injection
configuration can be modified to improve gas phase reaction.
According to these modified configurations, alkyls and ammonia are
mostly separated before being introduced into the reaction chamber
as shown in FIG. 7, and are completely separated before entering
the reaction chamber as shown in FIG. 8. In both cases, the
reactants are mixed immediately before reaching the growth zone
where wafers are located. Gas phase reaction only happens in a very
short time before gases participate in the growth process.
[0122] With particular reference to FIG. 7, an alkyl inlet 141 is
separate from an ammonia inlet 142. Both the alkyl inlet 141 and
the ammonia inlet 142 provide a reaction gas to the carrier gas
inlet 112 immediately prior to these gases entering the chamber
111.
[0123] With particular reference to FIG. 8, the alkyl inlet 141
provides a reaction gas to the carrier inlet 112 much the same as
in FIG. 7. The ammonia inlet 151 comprises a tube disposed within
the carrier inlet 112. The ammonia inlet is preferably disposed
generally concentrically within the carrier inlet 112. However,
those skilled in the art will appreciate that various other
configurations of the alkyl inlet 141, the ammonia inlet 151, and
the carrier inlet 112 are likewise suitable.
[0124] A nozzle 161 tends to spread ammonia evenly across the wafer
carrier 116 so as to provide enhance reaction efficiency.
[0125] The reaction gas inlet configurations of both FIG. 7 and
FIG. 8 mitigate undesirable gas phase reactions prior to the
reaction gases contacting the wafers.
[0126] As mentioned above, an advantage of the reactor
configuration shown in FIGS. 5, 7, and 8 is the significant
reduction of undesirable deposits upon the heater 117. The heater
assembly can be either a radiant heater or a radio frequency (RF)
inductive heater. By providing a heater purge 146 to the lower part
of the reactor 111, reaction gas can be effectively prevented from
entering the heater region. Thus, any reaction gas leaks past the
ring seal 132 is quickly purged from the heater region, such that
deterioration of the heater 117 caused thereby is mitigated.
[0127] According to one aspect, the present invention comprises a
way to scale up the throughput of a metal organic chemical vapor
deposition (MOCVD) system or the like. Unlike contemporary attempts
to scale up a MOCVD reactor by increasing the size of the reaction
chamber, present invention integrates several smaller reactor
modules to achieve the same wafer throughput.
[0128] Referring now to FIG. 9, a twenty-one wafer reactor 900 is
shown. Because of the large size of the reactor 900, gas is usually
introduced through multiple ports 901-903 so as to provide even
distribution thereof. Gas flow controllers 902 facilitate control
of the amount of reaction gas and the amounts of the components of
the reaction gas provided to the chambers.
[0129] A gas supply system 940 provides reaction gas to the ports
901-903. A gas exhaust system 950 removes the spent reaction gas
from the reactor 111.
[0130] Referring now to FIG. 10, an integrated three chamber
reactor of the present invention is shown. Each chamber 951-953 is
a comparatively small chamber, each defining, for example, a seven
wafer reactor. All of the reactors share the same gas inlet system
960 and gas exhaust system 970.
[0131] Both the configuration of FIG. 9 and the configuration of
FIG. 10 yield the same twenty-one wafer throughput. However, there
are substantial advantages of the present invention, as shown in
FIG. 10, as compared to the reactor as shown in FIG. 9. Smaller
reactors have better hardware reliability, especially for group III
nitride growth, since smaller mechanical parts have lower thermal
stress at high temperatures.
[0132] Further, growth consistency is better achieved with smaller
reactors, since temperature and flow dynamics are much easier to
maintain than in larger reactors. Also, since construction of
smaller reactor is much simpler than larger reactor, maintenance of
smaller reactor is much easier and takes less time. Therefore, a
smaller reactor usually has higher uptime, as well as less frequent
and less expensive parts service.
[0133] All of these factors result in much lower cost of ownership
for small reactors, since real wafer yield is higher and
maintenance cost is lower. Since the cost to build a reactor is
only about 2-5% of a whole MOCVD system, adding multiple reactors
in the system does not increase overall cost appreciably. The
benefit of this invention is much greater than the cost of
additional reactors.
[0134] As discussed in detail above, the present invention
comprises a chemical vapor deposition reaction chamber having a
rotatable wafer carrier, a narrow flow channel, a gas inlet located
at he center of the top lid, a gas exit above the wafer carrier, a
sealing ring around the wafer carrier to facilitate flow laminarly
to the exhaust and to define a heater chamber.
[0135] During the growth process (deposition), the wafer carrier is
rotating, typically at hundreds of rpm, e.g., 500-1500 rpm, so as
to facilitate faster gas flow in the flow channel via the use of
centrifugal force. Reactants mixed with less reactive gases, such
as nitrogen or hydrogen (carrier gases), are carried into the flow
channel and result in deposition on the hot substrates.
[0136] However, a portion of the chemical reaction occurs sooner
that desirable as the gas travels though the channel and a
substantial portion, possibly most, of the reactants in the gas are
consumed close to the gas inlet. A diminishing amount of the source
gas is left as gas travels along the channel. This is known as
depletion effect. The depletion effect is well known and commonly
occurs in horizontal reactors, where gas travels from one end of
the chamber horizontally to the other end of the chamber.
[0137] In the case of GaN growth, the reactants used can be
trimethylgallium (TMG) and ammonia (NH.sub.3), both of which can be
carried by either hydrogen (H.sub.2) or nitrogen (N.sub.2). The
supply of NH.sub.3 is much greater than the supply of TMG in a
typical metalorganic chemical vapor deposition (MOCVD) growth
process for GaN in order to prevent decomposition of GaN at the
surface. This is the case for III-V compounds and III-nitride
growth using MOCVD where group V gas supply is much greater than
group III. Therefore the depletion effect that adversely affects
growth uniformity is mostly due to the depletion of group III
sources.
[0138] Referring now to FIG. 11, according to at least one aspect
of the present invention, the group III and group V gas inlets are
separated. A top or lid 212 of a reactor 211 has an NH.sub.3 inlet
213 formed generally centrally therein. A plurality of group V
injectors 214 are formed in the lid in a manner that defines a
plurality of zones (best seen in FIG. 12)
[0139] Referring now to FIG. 12, a plurality of separate zones 250
are defined by separate groupings of group III invectors 214. Each
grouping of injectors 214 is positioned within a dedicated one of
the zones 250. All of the injectors 214 of a given zone 250 can
have common plumbing and the flow for each zone is separately
controllable with respect to the flow through the injectors 214 of
the other zones 250. That is, the amount of gas flowing into each
zone can be controlled by a dedicated flow controller so that any
desired group III gas (source) distribution can be adjusted
flexibly. Either the same gases or different gases can flow through
the injectors of each grouping 214. Thus, the flow rate for all of
the injectors 214 can be approximately the same and the
concentration of the group III reactants can be varied from zone to
zone, for example.
[0140] Three zones 250 and consequently three groups of injectors
214 are shown in FIG. 12. However, those skilled in the art will
appreciate that any desired number of zones 250 and any desired
number of groups of injectors 214 can be provided. Each zone 250
can contain any desired number of injectors 214. Indeed, every
single injector can define a zone and can be individually
controlled with respect to what gases are injected therewith and
the flow rate of injection. Thus, the configuration of zones 250
and injectors 214 shown in FIGS. 11 and 12 and discussed herein is
by way of example only, and not by way of limitation.
[0141] The lid 212 can comprise any desired number of injectors
214. For example, the lid 212 can comprises 12, 24, 36, 48, 64, or
more injectors 214. Further, each zone can contain any desired
number of injectors 214. For example, each zone can contain 4, 6,
8, 12, or more injectors 214.
[0142] By keeping the group V gas inlet 213 at the center of the
lid 212 and distributing the group III gas in a controlled manner
over the entire lid 212, laminar flow is established by the group V
gas while eliminating the depletion effect of group III source.
Much better deposition uniformity over the entire wafer carrier can
be achieved. The wafer carrier can rotate at a rate of between
approximately 10 rpm and approximately 1500 rpm. The pressure in
the reactor can be less than or equal to approximately 760 ton.
[0143] Distributing group III gas over the entire lid 212 can be
achieved by creating holes (injectors) in the lid. Water cooling of
the group III injectors can also provided to prevent premature
decomposition of the group III sources.
[0144] It is understood that the exemplary method and apparatus for
chemical vapor deposition described herein and shown in the
drawings represents only presently preferred embodiments of the
invention. Indeed, various modifications and additions may be made
to such embodiments without departing from the spirit and scope of
the invention. For example, it should be appreciated that the
apparatus and method of the present invention may find applications
which are different from metal organic chemical vapor deposition.
Indeed, the present invention may be suitable for application
completely unrelated to the fabrication of semiconductor
devices.
[0145] Thus, these and other modifications and additions may be
obvious to those skilled in the art and may be implemented to adapt
the present invention for use in a variety of different
applications.
* * * * *