U.S. patent application number 12/577922 was filed with the patent office on 2010-02-04 for method and apparatus for forming a high quality low temperature silicon nitride layer.
This patent application is currently assigned to APPLIED MATERIALS, INC.. Invention is credited to Aihua Chen, Errol Antonio Sanchez, Shulin Wang.
Application Number | 20100029094 12/577922 |
Document ID | / |
Family ID | 34749199 |
Filed Date | 2010-02-04 |
United States Patent
Application |
20100029094 |
Kind Code |
A1 |
Wang; Shulin ; et
al. |
February 4, 2010 |
Method and Apparatus for Forming a High Quality Low Temperature
Silicon Nitride Layer
Abstract
A method of forming a silicon nitride layer is described.
According to the present invention, a silicon nitride layer is
deposited by thermally decomposing a silicon/nitrogen containing
source gas or a silicon containing source gas and a nitrogen
containing source gas at low deposition temperatures to form a
silicon nitride layer. The thermally deposited silicon nitride
layer is then treated with hydrogen radicals to form a treated
silicon nitride layer.
Inventors: |
Wang; Shulin; (Campbell,
CA) ; Sanchez; Errol Antonio; (Tracy, CA) ;
Chen; Aihua; (San Jose, CA) |
Correspondence
Address: |
PATTERSON & SHERIDAN, LLP - - APPM/TX
3040 POST OAK BOULEVARD, SUITE 1500
HOUSTON
TX
77056
US
|
Assignee: |
APPLIED MATERIALS, INC.
Santa Clara
CA
|
Family ID: |
34749199 |
Appl. No.: |
12/577922 |
Filed: |
October 13, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10741417 |
Dec 19, 2003 |
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12577922 |
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10327467 |
Dec 20, 2002 |
7172792 |
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10741417 |
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60435813 |
Dec 20, 2002 |
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Current U.S.
Class: |
438/792 ;
257/E21.24 |
Current CPC
Class: |
C23C 16/45523 20130101;
H01L 21/3003 20130101; H01L 21/02271 20130101; H01L 21/0217
20130101; H01L 29/665 20130101; C23C 16/56 20130101; H01L 21/3185
20130101; H01L 21/022 20130101; H01L 29/6659 20130101; H01L
21/67207 20130101; H01L 21/0234 20130101; Y02P 20/582 20151101;
C23C 16/345 20130101 |
Class at
Publication: |
438/792 ;
257/E21.24 |
International
Class: |
H01L 21/31 20060101
H01L021/31 |
Claims
1. A method of processing a substrate, comprising: heating a
substrate to a temperature of 550.degree. C. or less; thermally
decomposing a silicon and nitrogen containing source gas or a
silicon containing source gas and a nitrogen containing source gas
to deposit a silicon nitride layer on a surface of the substrate,
wherein the silicon containing source gas or the silicon and
nitrogen containing source gas comprises a compound having bonds
selected from the group of Si--Si, N.dbd.N, N--N, or combinations
thereof; and exposing the silicon nitride layer to hydrogen
radicals, wherein the hydrogen radicals are formed by plasma
decomposition of a hydrogen containing source gas.
2. The method of claim 1, wherein the hydrogen containing source
gas comprises ammonia (NH.sub.3), hydrogen gas (H.sub.2), or a
combination of ammonia (NH.sub.3) and hydrogen gas (H.sub.2).
3. The method of claim 1, wherein hydrogen containing source gas
further comprises an inert gas selected from the group consisting
of nitrogen gas (N.sub.2), argon (Ar) and helium (He).
4. The method of claim 1, wherein the plasma decomposition of the
source gas occurs physically remote from the chamber in which the
silicon nitride layer is treated with hydrogen radicals.
5. The method of claim 1, wherein the silicon containing source gas
or the silicon and nitrogen containing source gas comprises a first
silicon atom bonded to a second silicon atom by a single bond and
at least a chlorine (Cl) atom or a nitrogen (N) atom bonded to the
first silicon atom and the second silicon atom.
6. The method of claim 5, wherein the silicon nitride layer has a
chlorine concentration of less than 1.0 atomic percent after
exposing the silicon nitride layer to hydrogen radicals and.
7. The method of claim 5, wherein an organo group is bonded to a
nitrogen atom.
8. The method of claim 1, wherein the silicon containing source gas
or the silicon and nitrogen containing source gas comprises a
compound selected from the group having the structures of
R.sub.2N--Si(R'.sub.2)--Si(R'.sub.2)--NR.sub.2,
R.sub.3--Si--N.sub.3, R'.sub.3--Si--NR--NR.sub.2, wherein y is one
or more and R and R' comprise one or more functional groups
selected from the group of a halogen, an organic group having one
or more double bonds, an organic group having one or more triple
bonds, an aliphatic alkyl group, a cyclical alkyl group, an
aromatic group, an organosilicon group, an alkyamino group, or a
cyclic group containing N or Si, and combinations thereof.
9. The method of claim 8, wherein R and R' comprise one or more
functional groups selected from the group of chloro, methyl, ethyl,
isopropyl, trimethylsilyl, pyrrolidine, and combinations
thereof.
10. The method of claim 9, wherein the silicon containing source
gas or the silicon and nitrogen containing source gas comprises
1,2-dichloro-tetrakis (diethylamino) disilane.
11. The method of claim 5, wherein the silicon nitride layer has a
chlorine concentration of less than 1.0 atomic percent after
exposing the silicon nitride layer to hydrogen radicals and a
carbon concentration of less than 5 atomic percent after exposing
the silicon nitride layer to hydrogen radicals.
12. The method of claim 1, further comprising: depositing a second
silicon nitride layer onto the treated silicon nitride layer by
thermally decomposing a silicon and nitrogen containing source gas
or a silicon containing source gas and a nitrogen containing source
gas; and exposing the second silicon nitride layer with hydrogen
radicals.
13. The method of claim 12, further comprising: depositing a third
silicon nitride layer on the second treated silicon nitride layer
by thermally decomposing a silicon and nitrogen containing source
gas or a silicon containing source gas and a nitrogen containing
source gas; and exposing the third silicon nitride layer with
hydrogen radicals.
14. The method of claim 1, wherein the silicon nitride deposited
layer is treated with hydrogen radicals at a temperature between
450.degree. C. and 600.degree. C.
15. The method of claim 1, wherein after treating the silicon
nitride layer, the silicon nitride layer has a hydrogen
concentration of less than 10 atomic percent, a refractive index of
greater than or equal to 1.90 after exposing the silicon nitride
layer to hydrogen radicals, an etch rate of approximately the same
as the etch rate of silicon oxide utilizing a buffered oxide etch,
or a combination thereof.
16. The method of claim 1, wherein the deposited silicon nitride
layer exposed to hydrogen radicals has a hydrogen concentration of
less than 10%.
17. The method of claim 1, wherein the silicon nitride layer is
treated within the same chamber in which it is deposited.
18. A method for forming a silicon nitride layer comprising:
depositing a silicon nitride layer by thermally decomposing a
silicon and nitrogen containing source gas or a silicon containing
source gas and a nitrogen containing source gas, wherein the
silicon nitride layer has a hydrogen concentration of greater than
15 atomic percent and a carbon concentration of greater than 10
atomic percent; and treating the deposited silicon nitride layer
with hydrogen radicals until the silicon nitride layer has a
hydrogen concentration of less than 10 atomic percent and a carbon
concentration of less than 5 atomic percent.
19. The method of claim 18, wherein the silicon nitride layer has a
chlorine concentration of less than 1.0 atomic percent after
exposing the deposited silicon nitride layer to hydrogen
radicals.
20. A method of forming a silicon nitride layer comprising:
depositing a silicon nitride layer by thermally decomposing a
silicon and nitrogen containing source gas or a silicon containing
source gas and a nitrogen containing source gas wherein the silicon
containing source or the silicon and nitrogen containing source gas
comprises chlorine and carbon; and treating the deposited silicon
nitride layer with hydrogen radicals formed by plasma decomposition
of a hydrogen containing gas to form a treated silicon nitride
layer.
Description
CROSS-REFERENCED TO RELATED APPLICATIONS
[0001] This application is a continuation application of co-pending
U.S. patent application Ser. No. 10/741,417, filed Dec. 19, 2003,
which application claims benefit of U.S. Provisional Patent
Application Ser. No. 60/435,813, filed Dec. 20, 2002, and which
application is a continuation-in-part of U.S. patent application
Ser. No. 10/327,467, filed Dec. 20, 2002, now issued as U.S. Pat.
No. 7,172,792, of which all applications and patents are herein
incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to the field of thin layer
formation and more particularly to a method and apparatus for
forming silicon nitride layers.
[0004] 2. Discussion of Related Art
[0005] Modern integrated circuits are made up of literally millions
and millions of transistors integrated together into functional
circuits. In order to further increase the computational power or
storage capability of integrated circuits, transistor feature size
such as gate length and gate oxide thickness must be further scaled
down. Unfortunately, as transistor gate lengths are continually
scaled, the transistor's electrical characteristics and performance
can greatly change due to thermal redistribution of dopants in the
device. As such, as devices are further scaled, the thermal budget,
i.e., the individual process or cumulative heat input from
deposition and process temperatures, used to manufacture the
integrated circuit must also be reduced to insure consistent and
reliable electrical performance of the device. Additionally, in
order to further scale the semiconductor device, the thin layers
used to make the devices must be able to be formed with high
compositional and thickness uniformity.
[0006] One material used in the formation of transistors is silicon
nitride. Silicon nitride thin layers are conventionally deposited
by thermal chemical vapor deposition (CVD) in semiconductor
fabrication processes. For example, silicon nitride layers are used
as spacer layers, etch stops, as well as capacitor and interlayer
dielectrics. However, present techniques of forming high quality
silicon nitride layers in a single wafer reactor utilizing thermal
chemical vapor deposition require high deposition temperatures of
greater than 750.degree. C. and/or have reduced deposition rates at
reduced temperatures, and can result in no appreciable deposition
of silicon nitride for transistor fabrication.
[0007] Additionally, when silicon nitride layers are deposited at
reduced temperatures or at high deposition rates with current
processes and precursors, the quality of the layer is generally
less than desirable. For example, current silicon nitride
precursors including silane, dichlorosilane, disilane,
bis-tertbutylaminosilane (BTBAS), and hexachlorodisilane have
produced layers with less than desired layer quality, such as low
density and high hydrogen content. Disilane and hexachlorodisilane
have weak Si--Si bond which allows for acceptable deposition rates,
but when used with a nitrogen source such as ammonia either lead to
poor film quality (low density and high hydrogen content for both,
and poor step coverage and microloading for disilane) or almost
unmanageable particle generation (for hexachlorodisilane).
[0008] Thus, what is needed is a method of forming a high quality
silicon nitride layer by thermal chemical vapor deposition (CVD) at
reduced deposition temperatures at a manufacturable deposition
rates.
SUMMARY OF THE INVENTION
[0009] The present invention generally relates to methods of
forming dielectric layer for transistor, such as a silicon nitride
layer. According to the present invention, a silicon nitride layer
is deposited by thermally decomposing a silicon/nitrogen containing
source gas or a silicon containing source gas and a nitrogen
containing source gas at reduced deposition temperatures to form a
silicon nitride layer. The precursors comprise compounds having
Si--N bonds, Si--Cl bonds, or both bonds. The thermally deposited
silicon nitride layer is then exposed to hydrogen radicals to form
a treated silicon nitride layer. Precursors having one or more
Si--Si, N--N or N.dbd.N bonds are used to deposit the silicon
nitride layer at reduced temperatures.
[0010] In one aspect of the invention, a method is provided for
processing a substrate including heating a substrate to a
temperature of 550.degree. C. or less, thermally decomposing a
silicon and nitrogen containing source gas or a silicon containing
source gas and a nitrogen containing source gas to deposit a
silicon nitride layer on a surface of the substrate, and exposing
the silicon nitride layer to hydrogen radicals.
[0011] In another aspect of the invention, a method is provided for
forming a silicon nitride layer including depositing a silicon
nitride layer by thermally decomposing a silicon and nitrogen
containing source gas or a silicon containing source gas and a
nitrogen containing source gas at a temperature of less than
550.degree. C. and at a deposition rate of greater than 100 .ANG.
per minute to a thickness of less than 150 .ANG. and exposing the
deposited silicon nitride layer to hydrogen radicals formed by
plasma decomposition of a hydrogen containing gas.
[0012] In another aspect of the invention, a method is provided for
forming a silicon nitride layer including depositing a silicon
layer by thermally decomposing a silicon and nitrogen containing
source gas or a silicon containing source gas and a nitrogen
containing source gas wherein the silicon containing source or the
silicon and nitrogen containing source gas includes chlorine and
carbon and treating the deposited silicon nitride layer with
hydrogen radicals formed by plasma decomposition of a hydrogen
containing gas to form a treated silicon nitride layer.
[0013] In another aspect of the invention, a method is provided for
forming a silicon nitride layer including depositing a silicon
nitride layer by thermally decomposing a silicon and nitrogen
containing source gas or a silicon containing source gas and a
nitrogen containing source gas wherein after depositing the silicon
nitride layer the silicon nitride layer has a hydrogen
concentration of greater 15 atomic percent and a carbon
concentration of greater than 10 atomic percent and treating the
deposited silicon nitride layer with hydrogen radicals until the
silicon nitride layer as a hydrogen concentration of less than 10
atomic percent and a carbon concentration of less than 5 atomic
percent.
[0014] In another aspect of the invention, an apparatus is provided
for forming a silicon nitride layer including a substrate support
located in a chamber for holding a substrate, a heater for heating
a substrate placed on the substrate support, a gas inlet for
providing a process gas mix comprising a silicon source gas and a
nitrogen source gas and/or a silicon/nitrogen source gas into the
chamber, means for generating hydrogen radicals from a hydrogen
containing gas, and a processor/controller for controlling the
operation of the apparatus wherein the processor/controller
includes a memory having a plurality of instruction for heating a
substrate placed on the substrate support to a temperature of less
than 550.degree. C., and for providing a silicon containing source
gas and a nitrogen containing source gas or a silicon and nitrogen
containing source gas into the chamber while heating the substrate
to form a silicon nitride layer on the substrate, and instructions
for controlling the means for generating hydrogen radicals for
treating the silicon nitride layer with hydrogen radicals.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a flowchart illustrating one embodiment of a
method for forming a silicon nitride layer.
[0016] FIG. 2 is a flowchart illustrating one embodiment of method
for forming a silicon nitride layer.
[0017] FIGS. 3A-3C are cross-sectional schematic drawings of one
embodiment of a method for forming a semiconductor device having
sidewall spacers formed from silicon nitride layer.
[0018] FIG. 4 is cross-sectional schematic drawing of one
embodiment of an apparatus which can be used to form a silicon
nitride layer.
[0019] FIG. 5 is a top plan view of one embodiment of a cluster
tool which can be used to form a silicon nitride.
DETAILED DESCRIPTION OF THE PRESENT INVENTION
[0020] The present invention is directed to forming high quality
silicon nitride layers that can be formed at reduced deposition
temperatures. In the following description numerous specific
details, such as deposition and anneal equipment have been set
forth in order to provide a thorough understanding of the present
invention. However, one of ordinary skill in the art will realize
that the invention may be practiced without these specific details.
In other instances well known semiconductor processes have not been
described in particular detail so as to avoid unnecessarily
obscuring the present invention.
[0021] Methods and apparatus are provided for forming a high
quality silicon nitride layer at a low deposition temperature of
less than 550.degree. C. by thermal chemical vapor deposition
(CVD). An example of a method of depositing a silicon nitride layer
is generally illustrated in the flow chart of FIG. 1. According to
the first step of the present invention, as set forth in block 102
of FIG. 1, a process gas mix comprising a silicon and nitrogen
containing source gas or a silicon containing source gas and a
nitrogen containing source gas, is thermally decomposed in a
chamber at a deposition temperature (substrate temperature) of less
than or equal to 550.degree. C., such as less than about
500.degree. C., to produce silicon species and nitrogen species
from which a silicon nitride layer is deposited. The source gas or
gases are chosen to enable a silicon nitride layer to be formed by
thermal chemical vapor deposition at a deposition rate of at least
50 .ANG. per minute and ideally at least 100 .ANG. per minute at
low deposition temperatures (i.e., substrate or wafer temperature)
of less than or equal to 550.degree. C.
Precursors
[0022] Source gases that can be used to produce a silicon nitride
layer by thermal chemical vapor deposition at sufficiently high
deposition rates at a low temperatures include compounds having one
or more Si--N bonds or Si--Cl bonds, such as
bis-tertbutylaminosilane (BTBAS) or hexachlorodisilane (HCD or
Si.sub.2Cl.sub.6). Further inclusion of Si--Si bonds, N--N bonds,
N.dbd.N bonds, a mixture of Si--N and Si--Cl bonds, or combinations
thereof, in the precursor is preferred.
[0023] Combination of a Si--Cl functional group (bond) and a Si--N
functional group (bond) has been observed to improved step coverage
and microloading especially for the ever decreasing temperatures at
suitable deposition rates. The number of Si--Cl groups can be
varied relative to the number of Si--N groups. The Si--Cl and S--N
bonds appear to have different effects on layer properties and
deposition properties, and the ratio of Si--N to and S--Cl bonds
can be used to balance layer properties and deposition
properties.
[0024] Compounds having preferred bond structures described above
have the generic structures:
[0025] (I) NR.sub.2--Si(R'.sub.2)--Si(R'.sub.2)--NR.sub.2,
(amino(di)silanes),
[0026] (II) R.sub.3--Si--N.dbd.N.dbd.N, (silyl azides), or
[0027] (III) R'.sub.3--Si--NR--NR.sub.2 (silyl hydrazines).
[0028] In the above generic structures, R and R' comprise one or
more functional groups selected from the group of a halogen, an
organic group having one or more double bonds, an organic group
having one or more triple bonds, an aliphatic alkyl group, a
cyclical alkyl group, an aromatic group, an organosilicon group, an
alkyamino group, or a cyclic group containing N or Si, and
combinations thereof.
[0029] Examples of suitable functional groups include chloro
(C.sup.-), methyl (--CH.sub.3), ethyl (--CH.sub.2CH.sub.3),
isopropyl, trimethylsilyl, pyrrolidine, and combinations thereof.
Examples of suitable compounds include:
TABLE-US-00001 1,2-diethyl-tetrakis (diethylamino) disilane,
(CH.sub.2CH.sub.3(NCH.sub.2CH.sub.3).sub.2Si).sub.2
1,2-dichloro-tetrakis (diethylamino) disilane,
(Cl(NCH.sub.2CH.sub.3).sub.2Si).sub.2 hexakis (N-pyrrolidinio)
disilane, ((C.sub.4H.sub.9N).sub.3)Si).sub.2
1,1,2,2-tetrachloro-bis(di-trimethylamino) disilane,
(Cl.sub.2(NSi(CH.sub.3).sub.3))Si).sub.2
1,1,2,2-tetrachloro-bis(di-isopropyl) disilane,
(Cl.sub.2(N(C.sub.3H.sub.7).sub.2))Si).sub.2 1,2-dimethyl-tetrakis
(diethylamino) disilane,
(CH.sub.3(NCH.sub.2CH.sub.3).sub.2Si).sub.2
tris(dimethylamino)silane azide, (N(CH.sub.3).sub.2).sub.3SIN.sub.3
trimethylamino silane azide, (CH.sub.3).sub.3SIN.sub.3 (2,2
dimethylhydrazine)dimethylsilane,
(CH.sub.3).sub.2SIH-NH-N(CH.sub.3).sub.2 and combinations
thereof.
[0030] It is believed that silicon source gas (precursor) or the
silicon and nitrogen source gas (precursor) having a silicon to
silicon single bond (i.e., Si--Si single bond) enables the molecule
to decompose or disassociate at reduced temperatures, such as about
550.degree. C. or less.
[0031] A nitrogen source gas or precursor which can be used to
deposit a silicon and nitrogen containing layer includes but is not
limited to ammonia (NH.sub.3), hydrazine N.sub.2H.sub.4), hydrogen
azide HN.sub.3, or a combination thereof. The nitrogen source gas
ideally contains a nitrogen-nitrogen single bond (i.e., N--N single
bond) for decomposition of the nitrogen source gas at low
temperatures. Additionally, when a silicon and nitrogen containing
source gas is used in the process gas mix, some amount of a
nitrogen source gas will typically also be included in the gas mix
for flexible control over the composition of the deposited layer
during the layer deposition.
[0032] Suitable silicon source gas or the silicon and nitrogen
source gas compounds may be adapted to minimize carbon and hydrogen
content in the layers. In this respect, Si--C bonds, Si--H bonds,
and N--H bonds, are minimized in the precursor bond composition
[0033] The method of SiN CVD using the engineered precursors will
be described from hereon. The CVD process may still require
addition of some but minimal amount of NH.sub.3 to make a SiN layer
stoichiometric. This is still a requirement despite the delivery of
nitrogen from the precursor since the incorporation efficiencies
for Si and N into the layer are different (different kinetic
barriers). Stoichiometric silicon nitride layers will contain
<10% C though potentially still >10% H depending on
temperature and choice of the R groups. Possible further
post-treatments to lower the % H may be employed, as detailed in a
separate patent. For the deposition of oxides and oxynitrides using
the aminodisilane precursor, addition of an oxidizing agent such as
N2O is required.
[0034] An example of a method of depositing and treating a silicon
nitride layer in a single wafer reactor in accordance with an
embodiment of the present invention is illustrated in flow chart
200 of FIG. 2. The first step is to deposit a silicon nitride layer
by thermal chemical vapor deposition onto a wafer or substrate. A
specific example of the silicon nitride deposition process is set
forth in FIG. 2 as block 201 of flowchart 200 and can comprise
steps 202-210 of flow chart 200. The first step in depositing a
silicon nitride layer is to place the wafer or substrate into a
chamber. Ideally the silicon nitride layer is formed in a chamber
of a reduced pressure single wafer cold wall reactor having a
resistively heated substrate support for heating the wafer, such as
the Applied Materials, Xgen Chamber. An example of a suitable
chamber is shown and illustrated in FIG. 4.
[0035] Once the substrate has been placed into the chamber, the
deposition pressure and temperature used to deposit the silicon
nitride layer is achieved. In an embodiment of the present
invention, the deposition pressure at which the deposition of
silicon nitride layer occurs is between about 10 torr and about 350
torr. The deposition temperature (i.e., the temperature of the
wafer or substrate) will depend upon the specific process gases
(e.g., silicon containing source gas and nitrogen containing source
gas) used to deposit the silicon nitride layer. The wafer or
substrate temperature is less than or equal to 550.degree. C., such
as less than 500.degree. C., and generally between about
450.degree. C. and about 550.degree. C. during the deposition
process.
[0036] Next, as set forth in block 206, the process gases are
introduced into the deposition chamber. The process gas mix will
include at least a silicon containing source gas (i.e., gas which
can be decomposed to provide silicon atoms or silicon containing
intermediate species for the deposition of the silicon nitride
layer) and the nitrogen containing source gas (i.e., a gas which
can be thermally decomposed to provide a source of nitrogen atoms
or nitrogen containing species for the deposition of a silicon
nitride layer) as described herein. Alternatively, the process gas
mix may include a silicon/nitrogen source gas which provides from a
single molecule a source of both nitrogen and silicon atoms or
nitrogen and silicon bearing intermediate species for the formation
of silicon nitride layer.
[0037] When a silicon and nitrogen source gas is utilized, the
process gas mix may also include a nitrogen source gas and/or a
silicon source gas or may include just the silicon/nitrogen source
gas without additional sources of nitrogen and silicon. In an
embodiment of the present invention, the nitrogen source gas is
provided into the deposition chamber prior to providing the silicon
source gas into the chamber. Alternatively, an inert carrier gas,
such as a noble gas including helium and argon, as well as nitrogen
(N.sub.2), may be introduced into the reaction chamber. The silicon
source gas and the nitrogen source gas may be introduced into the
processing chamber at a flow rate ratio of between 1:1 and about
1:1000, for example, between about 1:1 and about 1:500.
[0038] In an embodiment of the present invention, the silicon
source gas is hexachlorodisilane (HCD). A silicon nitride layer can
be formed by providing HCD and NH.sub.3 or N.sub.2H.sub.4 into the
chamber. If HCD is utilized it may be mixed with an inert carrier
gas, such as N.sub.2, prior to being introduced into the reaction
chamber. HCD is provided into the reaction chamber at a rate
between 10-200 sccm while between 500-5000 sccm of nitrogen source
gases is provided to the reaction chamber. In one example, the HCD
source gas and the nitrogen source gas have a flow rate of 1:1 and
1:1000 and ideally between 1:1 and 1:500 respectively. Such a
process can form a silicon nitride layer at a deposition rate of
approximately 80 .ANG./min at a wafer temperature of 530.degree. C.
and at a deposition rate of approximately 50 .ANG./min at a wafer
temperature of 480.degree. C.
[0039] A suitable silicon nitride layer can be formed utilizing
1,2-dichloro-tetrakis (diethylamino) disilane a flow rate of 10-100
sccm and a nitrogen source gas at a flow rate between 200-2000
sccm. A suitable silicon nitride layer can be deposited from
1,2-diethrl-tetrakis (diethylamino) disilane at a flow rate between
10-100 sccm and a nitrogen source gas at a flow rate between
200-2000 sccm. Such a process can form a silicon nitride layer at a
deposition rate of about 80 .ANG./min at 530.degree. C. wafer
temperature and at a deposition rate of about 50 .ANG./min at
480.degree. C. wafer temperature. Further examples as follows are
detailed process parameters in a single wafer low pressure thermal
CVD apparatus such as the Applied Materials SiNgen and preferably
with the precursor 1,2-dichloro-tetrakis (diethylamino) disilane
and include a substrate temperature between 450.degree. C. and
about 650.degree. C., such as about 500.degree. C., a chamber
pressure between about 10 torr and about 300 torr, such as between
about 40 torr and about 200 torr, an NH.sub.3 to silicon precursor
flow ratio greater than 10, such as between about 50 and about 100,
a silicon precursor flow rate between about 0.2 and about 1.0
gms/min, such as 0.5 gms, and a heater to showerhead spacing
between about 500 mils and about 1000 mils, that can result in a
deposition rate between 60 and 200 .ANG./min, for example, about
100 .ANG./min.
[0040] In comparison, the following are details of the SiN CVD
process in batch furnaces again preferably with the precursor
1,2-dichloro-tetrakis (diethylamino) disilane and include a
substrate temperature between 450.degree. C. and about 650.degree.
C., such as about 500.degree. C., a chamber pressure between about
0.1 torr and about 2 torr, such as between about 0.4 torr and about
1 torr, an NH.sub.3 to silicon precursor flow ratio less than 10,
such as between about 1 and about 5, a silicon precursor flow rate
depends on furnace tube volume that can result in a deposition rate
between 5 and 20 .ANG./min, for example, about 12 .ANG./min.
[0041] Next, as set forth in block 208 of flow chart 200, heat from
the heated substrate or substrate support causes the silicon and
nitrogen source gas or the silicon source gas and the nitrogen
source gas to thermally decompose. The thermal decomposition of the
silicon source gas provides silicon atoms or silicon containing
intermediate species. The thermal decomposition of the nitrogen
source gas provides nitrogen atoms or nitrogen containing
intermediate species. The thermal decomposition of a silicon and
nitrogen source gas can provide both silicon atoms or silicon
intermediate species as well as nitrogen atoms or nitrogen
intermediate species. The silicon atoms or silicon containing
intermediate species react with the nitrogen atoms or nitrogen
containing intermediate species to deposit a silicon nitride layer
over the surface of the substrate. It is to be appreciated that in
the present invention, the silicon/nitrogen containing source gas
or the silicon source gas and the nitrogen source gas are thermally
decomposed using only thermal energy, such as heat from the
substrate or heat from the substrate support without the aid of
additional sources of energy, such as photon enhancement or plasma
enhancement, refereed to as a plasma-free deposition process. In an
embodiment of the present invention, the silicon nitride layer is
deposited to a thickness between 10-150 .ANG. with a thickness of
less than 120 .ANG. and ideally less than 80 .ANG. being preferred.
If thicker layers are desired, a second, third, or other multiple
deposition/hydrogen radicals treatment cycles can be used to
deposit thicker layers as will be discussed later.
[0042] In an embodiment of the present invention, as set forth in
block 210, after deposition of a sufficiently thick silicon nitride
layer, the flow of the silicon source gas and nitrogen source gas
is stopped. In an embodiment of the present invention, when the
deposition of the silicon nitride is completed, the substrate can
be optionally treated with the nitrogen source gas as set forth in
block 210. Only the nitrogen source gas is introduced in the
reaction chamber for about 10 seconds. Treating the silicon nitride
layer with a nitrogen source gas at the end of the deposition step
terminates unreacted silicon sites on the substrate. This operation
helps increase the N/Si ratio and reduce hydrogen (specifically in
the Si--H bond form) in the silicon nitride layer. However,
operation 210 is not necessary to achieve good silicon nitride
layers in accordance with the present invention.
[0043] The process gas mix utilized in the present invention to
deposit the silicon nitride layer enables a silicon nitride layer
to be deposited by thermal chemical vapor deposition at a rate of
at least 50 .ANG. per minute and ideally at a rate greater than 100
.ANG. per minute at low deposition temperature of less than
550.degree. C. and ideally less than 500.degree. C.
Plasma Treatment
[0044] The deposited silicon nitride layer is treated with hydrogen
radicals for a predetermined period of time in order to improve the
quality of the layer. The hydrogen radicals can be formed by a
plasma decomposition of a hydrogen containing gas, such as ammonia
(NH.sub.3) and hydrogen (H.sub.2), either in-situ within the
chamber or in a remote device and delivered to the chamber. The as
deposited silicon nitride layer can be treated with hydrogen
radicals at a flux between 5.times.10.sup.15
atomic/cm.sup.2-1.times.10.sup.17 atoms/cm.sup.2. During the
hydrogen radical treatment the substrate is heated to a low
temperature of between about 450.degree. C. and about 600.degree.
C. and at a chamber pressure between about 100 militorr and about 5
torr. A sufficient treatment can typically occur between about 15
and about 120 seconds.
[0045] The hydrogen radicals used for the hydrogen radical
treatment can be produced in any suitable manner. In embodiment of
the present invention, the hydrogen radicals are formed by plasma
decomposition of a hydrogen containing gas which can be decomposed
to provide a sufficient number of hydrogen radicals. Hydrogen
radicals include all species of atomic hydrogen including highly
activated neutral atomic hydrogen, and charged hydrogen ions. A
suitable hydrogen source gas includes ammonia (NH.sub.3) and
hydrogen gas (H.sub.2). In embodiment of the present invention, the
hydrogen source gas includes a mixture of NH.sub.3 and H.sub.2. In
an embodiment of the present invention, the hydrogen treatment gas
includes only NH.sub.3 or only H.sub.2. Additionally, in an
embodiment of the present invention, an inert gas, such as N.sub.2,
Ar or He can be provided along with the hydrogen treatment gas.
[0046] A hydrogen containing gas can be suitably disassociated to
provide hydrogen radicals utilizing a microwave or radio-frequency
source at a power between 200-2000 watts. The plasma decomposition
of a hydrogen treatment gas can be accomplished in-situ or
utilizing a remote plasma. In an in-situ process, the plasma and
hydrogen radicals are generated in the same chamber in which the
substrate having the silicon nitride layer to be treated is
located. An example of a suitable plasma chamber includes a
capacitively-coupled PECVD or a high density plasma HDP chamber. In
a remote plasma treatment, the hydrogen radicals and plasma are
generated with microwaves in a chamber separated from the chamber
in which the substrate having a silicon nitride layer to be treated
as located. In a remote plasma process, the plasma and hydrogen
radicals are generated in a first chamber (dissociation chamber or
cavity) and then they flow through a conduit from the dissociation
chamber and into a second chamber containing a substrate with a
silicon nitride layer to be treated. Any suitable remote plasma
generator reactor can be used, such as but not limited to an Astex
Astron, the Applied Materials Remote Plasma Nitridation RPN source,
and the Applied Materials Advanced Strip Passivation Plus (ASP)
Chamber.
[0047] In an embodiment of the present invention, the hydrogen
radicals are formed by a "hot wire" or catalytic decomposition of a
hydrogen containing gas, such as ammonia (NH.sub.3) and hydrogen
gas (H.sub.2) or combinations thereof. In a "hot wire" process, a
wire or catalyst, such as a tungsten filament is heated to a high
temperature of approximately 1600-1800.degree. C. and the hydrogen
treatment gas fed over the filament. The heated filament causes the
cracking or decomposition of the hydrogen treatment gas to form the
hydrogen radicals. The hydrogen radicals then treat a silicon
nitride layer formed on a substrate located beneath filament.
Although the filament has a high temperature, the substrate is
still heated only to a low temperature of less than 600.degree. C.
and preferably to less than 550.degree. C. during the treatment
process. In yet another embodiment of the present invention, an
inductive generated plasma may be utilized to generate the hydrogen
radicals.
[0048] Because the distance in which the hydrogen radicals can
penetrate the silicon nitride layer is limited to about 100 .ANG.,
for example HCD films, and typically less than 50 .ANG., for
example, by silane films, by the low temperature process, a silicon
nitride layer of no more than 150 .ANG. and preferably no more than
100 .ANG. is formed prior to hydrogen radical treatment. When
thicker silicon nitride layers are desired, multiple deposition and
treatment cycles can be used. For example, if a 300 .ANG. silicon
nitride layer is desired, first a 100 .ANG. silicon nitride layer
can be deposited and then the silicon nitride layer is treated with
hydrogen radical. Next, a second 100 .ANG. silicon nitride layer
would be deposited on the treated silicon nitride layer and then
the second silicon nitride layer treated with hydrogen radicals.
Next, a third 100 .ANG. silicon nitride layer would be deposited on
the second silicon nitride layer and it treated with hydrogen
radicals. In this way, a high quality silicon nitride layer can be
formed to any thickness desired. For example, 3 cycles of 180 .ANG.
CVD of HCD followed by eight seconds of hydrogen radical exposure
indicate 3 layers of 100 .ANG. treated and 80 .ANG. untreated.
[0049] For example, a pre-hydrogen radical treatment silicon
nitride layer can have a hydrogen concentration of greater than 15
atomic percent with Si--H form of significant fraction, a carbon
concentration of greater than 10 atomic percent if an organic
silicon precursor is used, a chlorine concentration of greater than
1 atomic percent if a chlorinated silicon precursor is used, a
refractive index of less than 1.85, and a wet etch rate of more
than two times the etch rate of silicon oxide utilizing an oxide
etch, such as a buffered oxide etch (BOE). Such a silicon nitride
layer may be considered unsuitable for many applications of silicon
nitride layers in semiconductor device fabrication, such as spacers
and interpoly dielectrics.
[0050] The treated silicon nitride layer has been observed to have
a total hydrogen concentration less than 10 atomic percent, reduced
fraction of Si--H forms, a carbon concentration, for example, less
than five atomic percent, a chlorine concentration, for example,
less than one atomic percent, an increased refractive index, for
example, greater than 1.90, or a decreased wet etch rate, for
example, approximately the same (1:1) etch rate of silicon oxide
utilizing an oxide etch, such as BOE.
[0051] The process of the present invention enables a high quality
silicon nitride layer to be formed by thermal chemical vapor
deposition at a low deposition temperature and at a manfacturably
high deposition rate (e.g., greater than 50 .ANG./min). The low
deposition temperature enables the silicon nitride layer to be used
in semiconductor circuit manufacturing processes at application or
locations after transistor or active device formation because the
deposition temperature is sufficiently low not to dramatically
affect the thermal budget of the device or alter dopant
distribution therein. The high deposition rate of the silicon
nitride layer enables the process to be implemented in a single
wafer reactor.
Fabrication
[0052] The method of forming a silicon nitride layer in accordance
with the present invention, is ideal for use in the fabrication of
semiconductor devices which require a low thermal budget and/or the
prevention redistribution of dopants placed in a silicon substrate.
One example, for the use of a silicon nitride layer in accordance
with the present invention, is in the fabrication of sidewall
spacer. In such an application, a substrate, such as substrate 300
shown in FIG. 3A would be provided. Substrate 300 includes a
monocrystalline silicon substrate or layer 302 having a gate
dielectric layer 304 formed thereon. A gate electrode 306 having
laterally opposite sidewalls is formed on the gate dielectric
layer. Typically a pair of source/drain tip or extension regions
310 would be formed into the silicon substrate 302 in alignment
with the laterally opposite sidewalls of gate electrode 306.
[0053] Next, as shown in FIG. 3B a low temperature silicon nitride
layer is formed accordance with the present invention, would be
blanket deposited over the substrate of FIG. 300. The thickness of
the silicon nitride layer 312 depends upon the physical
characteristics of the transistor being fabricated, and for a 65 nm
technology device would generally be at least 200 .ANG. thick.
According to the present invention, a silicon nitride layer would
be deposited as described above utilizing a low deposition
temperature at a high deposition rate. A silicon nitride layer
having thickness of 100 .ANG. or less and ideally less than 50
.ANG. is first formed. The silicon nitride layer is then be
annealed with hydrogen radicals as described above. Next, if
necessary, a second silicon nitride layer is formed on the hydrogen
radical treated first silicon nitride layer. The second silicon
nitride layer would then be treated with hydrogen radicals as
described above. Next, a third silicon nitride layer would be
deposited by a low temperature chemical vapor deposition as
described above. The third deposited silicon nitride layer is
treated with hydrogen radicals as described above. The process is
continued in this manner until a silicon nitride layer 312 having a
total thickness desired is formed. In some uses embodiments, a
deposited or grown silicon oxide layer is formed prior to the
silicon nitride layer, and therefore underlies the silicon nitride
layer. Because the silicon nitride layer 312 is formed with a low
temperature process and is treated with hydrogen radicals at a low
temperature, the dopants forming the source/drain extensions 310
are not substantially moved or redistribute within substrate 302
during the silicon nitride. In this way, the electrical
characteristics of the fabricated device would be consistent.
[0054] Next, as shown in FIG. 3C, after the formation of a
sufficiently thick silicon nitride layer 312, silicon nitride 312
can be anisotropically etched to form sidewall spacers 314 which
run along laterally opposite sidewalls of gate electrode 306. The
anisotropic etch process removes the silicon nitride layer from
horizontal surfaces, such as source/drain extension 310 and the top
of gate electrode 306 while leaving silicon nitride on vertical
surfaces, such as sidewalls of the gate electrode 306. After
formation of the sidewall spacers 314, additional processing of the
semiconductor device can occur, such as the formation of deep
source/drain regions 316 and/or the formation of silicide 318 on
the source/drain regions. Sidewall spacers 314 allow offsetting of
the deep source/drain regions and allow silicides, such as titanium
silicide or cobalt silicide, to be formed on the source/drain
regions and the top of the gate electrode in a self-aligned process
as is well known in the art.
Apparatus
[0055] The silicon nitride layer of the present invention is
ideally formed in a low pressure thermal chemical vapor deposition
reactor. An example of a suitable reactor 400 is illustrated in
FIG. 4. In an embodiment of the present invention, the hydrogen
radical treatment can occur in the same chamber as used to deposit
the silicon nitride layer. In order to treat the "as deposited"
silicon nitride layer with hydrogen radicals in the same chamber
used to deposit the layer, a remote plasma source can be coupled to
a low pressure chemical vapor deposition reactor to provide a
source of hydrogen radicals to the chamber. An example of a remote
plasma generator source 801 coupled to a low pressure chemical
vapor deposition reactor 400 is also illustrated in FIG. 4.
Coupling a remote plasma generator 801 to a thermal chemical vapor
deposition reactor 400 greatly improves the throughput of the
present invention and enables the silicon nitride layer to be
directly treated with hydrogen radicals after the silicon nitride
deposition. Additionally, such an apparatus dramatically improves
wafer throughput when successive deposition/treatment cycles are
used to form thick silicon nitride layers, such as silicon nitride
layers greater than 200 .ANG..
[0056] FIG. 4 illustrates a reactor vessel assembly (reactor) 400.
FIG. 4 illustrates that the reactor 400 comprises a chamber body
406 that defines a reaction chamber 408 in which process gases,
precursor gases, or reactant gases are thermally decomposed to form
the silicon comprising layer on a wafer substrate (not shown). The
chamber body 406 is constructed of materials that will enable the
chamber to sustain a pressure between 10 to about 350 Torr. In one
exemplary embodiment, the chamber body 406 is constructed of an
aluminum alloy material. The chamber body 406 includes passages 410
for a temperature controlled fluid to be pumped therethrough to
cool the chamber body 406. Equipped with the temperature controlled
fluid passages, the reactor 400 is referred to as a "cold-wall"
reactor. Cooling the chamber body 406 prevents corrosion to the
material that is used to form the chamber body 406 due to the
presence of the reactive species and the high temperature.
[0057] Resident in the chamber body 406 are a reaction chamber 408,
a chamber lid 426, a faceplate (or shower head) 430, a blocker
plate 428, and a resistive heating assembly 404. The resistive
heating assembly 404 includes wire leads 412 running the length of
a heater tube 414 that is made of nickel. At the end of the heater
tube 414 is a heating disk 416 made out of sintered AlN. Within the
heating disk 416 is one or more heating coil 418 made out of
molybdenum. The wires 412 and the coil 418 are joined by brazing
and are electrically conductive therein. The wires 412 are
thermally insulated with AlN ceramic sleeves 420. The coil 418
provides most of the electrical resistance and therefore most of
the reaction chamber 408 heating. At the end of the heating disk
416 is a recess called a pocket 422 and within the pocket 422 is
placed a wafer (not shown).
[0058] FIG. 4 illustrates that the chamber body 408 further houses
a lifter assembly 436. The lifter assembly 436 facilitates the
moving of the wafer substrate (not shown) in and out of the
reaction chamber 408. The lifter assembly 436 can be a stepper
motor. The lifter assembly 436 moves the heater assembly 404 up and
down along an axis 405 to facilitate the moving of the wafer
substrate in and out of the reaction chamber 408.
[0059] A substrate or wafer is placed into the reaction chamber 408
through the entry port 434 by for example, a robotic transfer
mechanism (not shown). In one embodiment, the robotic transfer
mechanism couples to a transfer blade and the robotic transfer
mechanism controls the transfer blade. The transfer blade inserts
the substrate through the opening to load the substrate into the
reaction chamber 408 and onto pocket 422 of the heating disk 416.
As the substrate is being loaded, the lifter assembly 436 lowers
the heater assembly 404 and the heating disk 416 in an inferior
direction along the axis 405 so that the surface of the heating
disk 416 is below the entry port 434. As the heating disk 416 is
lowered, the substrate is placed in the reaction chamber 408. Once
the substrate is loaded, the entry 434 is sealed and the lifter
assembly 436 moves or advances the heater assembly 404 and the
heating disk 416 in a superior (e.g., upward) direction toward the
faceplate 430. In one exemplary embodiment, the advancement stops
when the wafer substrate is a short distance (e.g., 400-900 mils)
from the faceplate 430.
[0060] In one exemplary embodiment, when ready for deposition or
processing, process gases or precursor gases controlled by a gas
panel 401 are introduced into the reaction chamber 408. The blocker
plate 428 has a plurality of holes (not shown) to accommodate a gas
flow therethrough. The process gas is introduced into the reaction
chamber 408 first through the port 424, through the blocker plate
428, and then through the faceplate 430. The process gas is
distributed from the port 424 through the plurality of holes in the
blocker plate 428 and then through the faceplate 430. The faceplate
430 uniformly distributes the process gas into the reaction chamber
408.
[0061] The substrate can be removed from the chamber by for example
inferiorly (lowering) the heater assembly 404. As the heating
assembly 404 moves in an inferior direction, through the action of
the lifter assembly 436, the lift pins 442, contact the contact
lift plate 444 and remain stationary and ultimately, extend above
the top surface of the heating disk 416 to separate the substrate
from the heating disk 416 as it is lowered. A transfer blade is
then inserted through opening 434 and is positioned between the
substrate and the heating disk 416. The contact lift plate 444 is
then lowered, thereby lowering the lift pins 442 and causing the
substrate to be lowered onto the transfer blade. The substrate can
then be removed through the entry port 434 by the transfer
blade.
[0062] The mechanism described above may be repeated for subsequent
substrates. A detailed description of one suitable lifter assembly
436 is described in U.S. Pat. No. 5,772,773, which is assigned to
Applied Materials, Inc. of Santa Clara, Calif.
[0063] The reactor 400 also includes a temperature indicator (not
shown) to monitor the processing temperature inside the reaction
chamber 408. In one example, the temperature indicator can be a
thermocouple, which is positioned such that it conveniently
provides data about the temperature at the surface of the heating
disk 416 (or at the surface of a substrate supported by the heating
disk 416). In reactor 400 the temperature of a substrate is
slightly cooler, 20-30.degree. C. than the temperature of the
heating disk 416.
[0064] FIG. 4 further illustrate that the reaction chamber 408 is
lined with a temperature-controlled liner or an insulation liner
409. As mentioned above, the chamber body 406 includes the passages
410 for a temperature controlled fluid to create the cold-wall
chamber effect. The reaction temperature inside reaction chamber
408 can be as high as 600.degree. C. or even more. With the
chemistry that is used to form the layer in the reaction chamber
408, high temperature will easily corrode the chamber body 406 of
the reaction chamber 408. Hence, the chamber body 406 is equipped
with the passages 410 for a temperature controlled fluid such as
water or other coolant fluid that will cool the chamber body 406.
This will prevent the chamber body 406 from getting too hot which
will cause the chamber body 406 to be easily corroded. One problem
that may associate with such a cold-wall chamber is that the areas
inside the reaction chamber 408 that are in close proximity with
the chamber's cold-wall tend to experience a sharp drop in
temperature. The sharp drop in temperature in these areas
encourages formation or condensation of particles that are
undesirable or unfavorable for the silicon comprising layers formed
in the reaction chamber 408. For example, the reaction of HCD and
NH.sub.3 in a deposition process to form a silicon nitride
(Si.sub.3N.sub.4) layer typically causes the formation of
NH.sub.4Cl. NH.sub.4Cl is an undesirable salt by-product that
requires cleaning to prevent contamination to the Si.sub.3N.sub.4
being formed. When the temperature drops below about 150.degree.
C., condensation such as NH.sub.4Cl will occur. These particles may
become dislodged from the chamber wall. The dislodged particles
form nucleation sites for particle formations on the wafer
substrates. In one embodiment, the reaction chamber 408 is lined
with the temperature-controlled line 409 to prevent the undesirable
condensation of particles.
[0065] In one embodiment, the temperature-controlled liner 409 is
coupled to the wall of the chamber body 406 such that the
temperature-controlled liner 409 only has a few physical contacting
points along the wall of the chamber body 406. (See for example,
contacting points 459 illustrated in FIG. 4). Minimizing the
physical contacts between the temperature-controlled liner 409 and
the wall of the chamber body 406 minimizes heat loss to the chamber
body 406 by minimizing conducting points.
[0066] A purge gas (e.g., nitrogen) can be fed into the bottom of
the reaction chamber 408 during deposition to prevent unwanted
deposition.
[0067] The reactor 400 also couples to a pressure regulator or
regulators (not shown). The pressure regulators establish and
maintain pressure in the reaction chamber 408. Such pressure
regulators are known in the field. The pressure regulator(s) that
can be used for the exemplary embodiments must be able to maintain
pressure at a level in the range of about 10 Torr to about 350
Torr. Alternatively, the reactor 400 may also be coupled to a gas
pump-out system (not shown), which is well-known in the field to
pump gases out of the reaction chamber 408. The gas pump-out system
(which may include for example, throttle valve(s)) can also be used
to control the pressure in the reaction chamber 408. The reactor
400 also couples to sensors (not shown), which monitor the
processing pressure within the reaction chamber 408.
[0068] In one embodiment, a controller or processor/controller 900
is coupled to the chamber body 406 to receive signals from the
sensors, which indicate the chamber pressure. The
processor/controller 900 can also be coupled to the gas panel 401
system to control the flow of the nitrogen source gas, the silicon
source gas, and inert and/or purge gas. The processor 900 can work
in conjunction with the pressure regulator or regulators to adjust
or to maintain the desired pressure within the reaction chamber
408. Additionally, process/controller can control the temperature
of the heating disk, and therefore the temperature of a substrate
placed thereon. Processor/controller 900 includes a memory which
contains instructions in a computer readable format for controlling
the nitrogen source gas flow, the silicon source gas flow and the
inert gas flow, as well as the pressure in the chamber and
temperature of the heating disk within parameters set forth above
in order to form a silicon nitride layer in accordance with the
present invention. For example, stored in memory of
processor/controller 900 are instructions for heating a substrate
to a temperature less than or equal to 550.degree. C. and
instructions for providing a silicon source gas, and a nitrogen
source gas and/or a silicon/nitrogen source gas into chamber 408
while heating the substrate to a temperature of less than or equal
550.degree. C., as well as instructions for controlling the
pressure within chamber 408 to between 10-350 torr.
[0069] The materials for components in the reactor 400 are selected
such that the exposed components must be compatible with high
temperature processing of the present invention. The thermal
decomposition of the precursors or the reactant species of the
present invention to form the silicon comprising layer involves
temperature inside the reaction chamber 408 up to as high as
600.degree. C. The materials for the components in the reactor 400
should be of the types that withstand such high temperature. In one
embodiment, the chamber body 406 is made out of a corrosion
resistant metal such as hard anodized aluminum. Such type of
aluminum is often expensive. Alternatively, the chamber body 406
includes the passages 410 for a temperature-controlled fluid to be
passed through. The passage of the temperature-controlled fluid
enables the chamber body 406 to be made out of a very inexpensive
aluminum alloy or other suitable metal since the passages 410 will
keep the chamber body 406 cool. As mentioned, this is one of the
reasons why the reactor 400 is often referred to as a cold-wall
reactor. To prevent unwanted condensation on the cold-wall or the
cooled chamber body 406, the temperature-controlled liner 409
described above can be made out a material that will absorbs the
heat radiated from the reaction chamber 408 and keeps the
temperature of the temperature-controlled liner 409 to at least
about or greater than 150.degree. C. or alternatively to at least
about of greater than 200.degree. C. depending on the layer forming
applications. In one embodiment, the temperature-controlled liner
409 needs to be maintained at a temperature that is sufficient to
prevent unwanted condensation.
[0070] Additionally, the component materials should also be
compatible with the process gases and other chemicals, such as
cleaning chemicals and the precursors that may be introduced into
the reaction chamber 408. In one embodiment, the exposed surfaces
of the heating assembly 404 may be comprised of a variety of
materials provided that the materials are compatible with the
process. For example, the exemplary embodiments in this discussion
require corrosive chemistry to be applied at high temperatures. The
components of the heating assembly thus must withstand this
environment. In one example, the components of the heating assembly
are made out of a ceramic material such as aluminum nitride (AlN).
The heating disk 416 of the heating assembly 404 may also be
comprised of aluminum nitride material.
[0071] In one exemplary embodiment, the reaction chamber 408 is
stabilized using a stabilization gas such as N.sub.2, He, Ar, or
combinations thereof. In one example, a manifold is included in the
gas panel system 401 which will release the stabilization gas into
the reaction chamber 408. The stabilization gas can have a flow
rate ranging from 1,000 sccm to 10,000 sccm, preferably, about
2,000 sccm for a reactor 400 having a capacity of 5-6 liters.
[0072] In an embodiment of the present invention, reactor 400 is
coupled to a remote plasma generator 801 which generates and
provides hydrogen radicals to deposition chamber 408. Remote plasma
generator 801 includes a magnetron 802 which generates microwaves
with a microwave source. Magnetron 802 can preferably generate up
to 10,000 watts of 2.5 Ghz microwave energy. It is to be noted that
the amount of power required is dependent (proportional) to the
size of chamber 408. For an anneal chamber used to process 300 mm
wafers, 10,000 watts of power should be sufficient. Although a
microwave source is used to generate a plasma in apparatus 800,
other energy sources such as radio frequency (RF) may be used.
[0073] Magnetron 802 is coupled to an isolator and dummy load 804
which is provided for impedance matching. The dummy load absorbs
the reflected power so no reflective power goes to the magnetron
head. Isolator and dummy load 804 is coupled by a wave guide 806,
which transmits microwave energy to an autotuner 808. Autotuner 808
consist of an impedance matching head and a separate detector
module that uses three stepper motor driven impedance matching
stubs to reduce the reflective power of the microwave energy
directed to the power source. Autotuner 808 focuses the microwave
energy into the center of a microwave applicator cavity (or
chamber) 810 so that energy is absorbed by hydrogen treatment gas
fed into the applicator cavity 810 by conduit 812. Although an
autotuner is preferred a manual tuner may be employed.
[0074] Applicator 810 uses microwave energy received from magnetron
802 to create a plasma from the hydrogen treatment gas as it flows
down through a quartz plasma tube located inside applicator 810. A
source 814, such as a tank, of a hydrogen treatment gas such as but
not limited to H.sub.2 and NH.sub.3 used for generating the
hydrogen radicals is coupled to microwave applicator 810.
Additionally, a source of an inert gas such as argon (Ar), or
helium (He) can also be coupled to applicator 810. A prefire
mercury lamp can be used to radiate ultraviolet light into the
plasma tube to partially ionize the process gases and thereby make
it easier for the microwave energy to ignite the plasma.
[0075] The microwave energy from magnetron 802 converts the
hydrogen treatment gas into a plasma which consist of essentially
three components; ionized or charged hydrogen atoms, activated
(reactive) electrically neutral hydrogen atoms, and intermediate
hydrogen containing species, all of which for the purposes of the
present invention constitute "hydrogen radicals".
[0076] Applicator 810 can be bolted to the lid of apparatus 400.
The concentrated plasma mixture flows downstream through conduit
814 to chamber 408. Because the hydrogen radicals are generated at
location (chamber 810) which is separated or remote from the
chamber 408 in which the substrate to be annealed is located, the
hydrogen radicals are said to be "remotely generated".
[0077] Remote plasma source 801 can be coupled to
processor/controller 900. Processor/controller 900 can include
instructions stored in memory in a computer readable format, which
controls the operation of remote plasma source 801 to achieve the
hydrogen radical treatment process described above. Instructions
can include for example, instructions to control hydrogen treatment
gas flow rate and power to obtain the desired hydrogen radical flux
necessary to treat the silicon nitride layer, such as a flux
between 5.times.10.sup.15 atoms/cm.sup.2 and 1.times.10.sup.17
atoms/cm.sup.2 and can also include instructions for controlling
the temperature of the heating disk (and therefore the temperature
of the wafer) as well as instructions to control the pressure
within chamber 408 during the hydrogen radical treatment
process.
[0078] Additionally, although the present invention has been
described with respect to utilizing a single wafer apparatus, the
deposition and treatment processes of the present invention can
also be carried out in a semi-batch or tube type apparatus, if
desired, without departing from the scope of the present
invention.
[0079] In an alternative embodiment of the present invention, the
low temperature silicon nitride deposition process can be carried
out in a cluster tool, such as cluster tool 500 as shown in FIG. 5.
Cluster tool 500 includes a sealable transfer chamber 502 having a
wafer handler 504, such as a robot, contained therein. A load lock
or a pair of load locks 506 are coupled to the transfer chamber 502
through a sealable door to enable wafers to be brought into and out
of cluster tool 500 by robot 504. Coupled to transfer chamber 502
by a sealable door is a silicon nitride deposition reactor 508,
such as an Applied Materials Xgen single wafer, cold wall, thermal
chemical vapor deposition reactor having a resistive heater. Also
coupled to transfer chamber 502 by a sealable door is hydrogen
radical treatment chamber 510 as shown in FIG. 5. The hydrogen
radical treatment chamber can be for example, a plasma chamber,
such as a Applied Materials Advanced Strip Passivation Plus (ASP)
Chamber, a remote plasma chamber, such as Applied Materials Remote
Plasma Nitridation RPN chamber, or a "hot wire" chamber. Typically,
transfer chamber 502 is held at a reduced pressure and contains an
inert ambient, such as N.sub.2. In this way, wafers can be
transferred from one chamber (e.g., silicon nitride deposition
chamber 508) to a second chamber (e.g., hydrogen radical treatment
chamber) and vice versa without exposing the wafer to an oxidizing
ambient or to contaminants. Cluster tool 500 can also include a
processor/controller 900 as described above to control the
operation of the silicon nitride deposition reactor 500 as well as
the hydrogen radical treatment chamber 510 to deposit a silicon
nitride layer as described above and to treat the silicon nitride
layer with hydrogen radicals as described above.
[0080] In use, a wafer or substrate, such as the wafer shown in
FIG. 3A, is brought into transfer chamber 502 by robot 504 from
load lock 506. The wafer is transferred into the silicon nitride
deposition chamber 508, the door therebetween sealed and a silicon
nitride layer formed thereon with a low deposition temperature
process. Once a silicon nitride layer has been formed thereon, the
wafer is removed by robot 504 from silicon nitride deposition
chamber 508 and brought by robot 504 into hydrogen radical
treatment chamber 510. The door between hydrogen radical treatment
chamber 510 and transfer chamber 502 is then sealed and the silicon
nitride layer exposed to hydrogen radicals as described above. If a
thicker silicon nitride layer is desired, the wafer can be removed
from chamber 510 and brought back into silicon nitride deposition
chamber 508 in order to deposit additional silicon nitride. The
wafer would once again be removed from silicon nitride deposition
chamber 508 and brought back into hydrogen radical treatment
chamber 510 and treated with hydrogen radicals once again. The
wafer can be continually transferred between the deposition chamber
508 and the treatment chamber 510 until a silicon nitride layer of
the desired thickness and quality is obtained. Once a substantially
thick silicon nitride layer is formed, the wafer is removed from
cluster tool 500.
[0081] Thus, a method and apparatus for depositing and treating a
high quality silicon nitride layer at a low deposition temperature
has been described.
[0082] What is claimed is:
* * * * *