U.S. patent application number 12/505297 was filed with the patent office on 2010-01-21 for methods of forming polycrystalline diamond cutters.
This patent application is currently assigned to SMITH INTERNATIONAL, INC.. Invention is credited to Yuelin Shen, Youhe Zhang.
Application Number | 20100012389 12/505297 |
Document ID | / |
Family ID | 41529297 |
Filed Date | 2010-01-21 |
United States Patent
Application |
20100012389 |
Kind Code |
A1 |
Zhang; Youhe ; et
al. |
January 21, 2010 |
METHODS OF FORMING POLYCRYSTALLINE DIAMOND CUTTERS
Abstract
A method for forming a cutting element that includes forming at
least one cavity in at least one surface of a polycrystalline
abrasive body; placing the polycrystalline abrasive body adjacent a
substrate such that an opening of at least one cavity is adjacent
the substrate at an interface, wherein an interface surface of the
substrate is non-mating with the polycrystalline abrasive body; and
subjecting the polycrystalline abrasive body and substrate to high
pressure/high temperature conditions is disclosed.
Inventors: |
Zhang; Youhe; (Spring,
TX) ; Shen; Yuelin; (Houston, TX) |
Correspondence
Address: |
OSHA, LIANG LLP / SMITH
TWO HOUSTON CENTER, 909 FANNIN STREET, SUITE 3500
HOUSTON
TX
77010
US
|
Assignee: |
SMITH INTERNATIONAL, INC.
Houston
TX
|
Family ID: |
41529297 |
Appl. No.: |
12/505297 |
Filed: |
July 17, 2009 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61081619 |
Jul 17, 2008 |
|
|
|
Current U.S.
Class: |
175/432 ; 51/307;
51/309 |
Current CPC
Class: |
B24D 99/005 20130101;
E21B 10/567 20130101; E21B 10/573 20130101 |
Class at
Publication: |
175/432 ; 51/307;
51/309 |
International
Class: |
E21B 10/573 20060101
E21B010/573; B24D 3/10 20060101 B24D003/10; E21B 10/55 20060101
E21B010/55; E21B 10/567 20060101 E21B010/567 |
Claims
1. A method for forming a cutting element, comprising: forming at
least one cavity in at least one surface of a polycrystalline
abrasive body; placing the polycrystalline abrasive body adjacent a
substrate such that an opening of at least one cavity is adjacent
the substrate at an interface, wherein an interface surface of the
substrate is non-mating with the polycrystalline abrasive body; and
subjecting the polycrystalline abrasive body and substrate to high
pressure/high temperature conditions.
2. The method of claim 1, wherein the polycrystalline abrasive body
comprises at least one of polycrystalline diamond, polycrystalline
diamond having at least a portion of catalyzing material removed
therefrom, or polycrystalline cubic boron nitride.
3. The method of claim 2, wherein the portion of catalyzing
material is removed before the forming.
4. The method of claim 2, wherein the portion of catalyzing
material is removed after the forming.
5. The method of claim 1, further comprising: adding an
intermediate material in at least a portion of the at least one
cavity.
6. The method of claim 5, wherein the intermediate material
comprises at least one of tungsten, tungsten carbide, or diamond
powder.
7. The method of claim 1, wherein the opening of the at least one
cavity is less than 3 mm in diameter.
8. The method of claim 7, wherein the opening of the at least one
cavity is less than 1 mm in diameter.
9. The method of claim 8, wherein the opening of the at least one
cavity is less than 50 microns in diameter.
10. The method of claim 1, wherein prior to placement adjacent the
polycrystalline abrasive body, an upper surface of the substrate is
substantially planar.
11. The method of claim 1, wherein prior to placement adjacent the
polycrystalline abrasive body, an upper surface of the substrate is
non-planar.
12. A method for forming a cutting element, comprising: forming a
polycrystalline diamond compact of a polycrystalline diamond body
attached to a substrate comprising: placing a mixture of diamond
particles and a catalyst material adjacent a substrate; and
subjecting the mixture and substrate to high-pressure/high
temperature conditions; detaching the polycrystalline diamond body
from the substrate; forming at least one cavity in at least one
surface of the detached polycrystalline diamond body; placing the
polycrystalline abrasive body adjacent a substrate material such
that an opening of at least one cavity is adjacent the substrate
material; and subjecting the polycrystalline abrasive body and
substrate material to high temperature/high pressure
conditions.
13. The method of claim 12, further comprising: removing at least a
portion of the catalyst material from the polycrystalline diamond
body.
14. The method of claim 12, further comprising: filling at least a
portion of the at least one cavity with an intermediate
material.
15. The method of claim 14, wherein the intermediate material
comprises at least one of tungsten, tungsten carbide, or diamond
powder.
16. The method of claim 12, wherein the opening of the at least one
cavity is less than 3 mm in diameter.
17. The method of claim 16, wherein the opening of the at least one
cavity is less than 1 mm in diameter.
18. A method for forming a cutting element, comprising: forming at
least one cavity in at least one surface of a polycrystalline
abrasive body; placing the polycrystalline abrasive body adjacent a
substrate precursor material such that an opening of at least one
cavity is adjacent the substrate precursor; and subjecting the
polycrystalline abrasive body and substrate precursor materials to
high pressure/high temperature conditions.
19. The method of claim 18, wherein the substrate precursor
materials comprise a mixture of tungsten carbide powder and a Group
VIII metal.
20. The method of claim 18, further comprising: contacting the
polycrystalline abrasive body with a leaching agent.
21. The method of claim 18, wherein the opening of the at least one
cavity is less than 3 mm in diameter.
22. The method of claim 21, wherein the opening of the at least one
cavity is less than 1 mm in diameter.
23. A cutting element, comprising: a polycrystalline abrasive body;
and a substrate attached to the polycrystalline abrasive body,
wherein the polycrystalline abrasive body comprises, at the
interface between the polycrystalline abrasive body and the
substrate, at least one cavity formed therein, the at least one
cavity having an opening with at least one dimension of less than 1
mm; and wherein the substrate comprises at least one projection
mating the at least one cavity.
24. The cutting element of claim 23, wherein the wherein the
polycrystalline abrasive body comprises at least one of
polycrystalline diamond, polycrystalline diamond having at least a
portion of catalyzing material removed therefrom, and
polycrystalline cubic boron nitride.
25. The cutting element of claim 23, wherein the cavity comprises a
channel extending through an entire thickness of the
polycrystalline abrasive body.
26. The cutting element of claim 23, wherein the cavity extends a
partial thickness into the polycrystalline abrasive body.
27. The cutting element of claim 23, wherein the opening has at
least one dimension of less than 50 microns.
28. A cutting element, comprising: a polycrystalline abrasive body;
and a substrate attached to the polycrystalline abrasive body,
wherein the polycrystalline abrasive body comprises, at the
interface between the polycrystalline abrasive body and the
substrate, at least one cavity formed therein; and wherein the
substrate comprises at least one projection mating the at least one
cavity, the at least one projection comprising a material
composition distinct from the remaining substrate.
29. The cutting element of claim 28, wherein the wherein the
polycrystalline abrasive body comprises at least one of
polycrystalline diamond, polycrystalline diamond having at least a
portion of catalyzing material removed therefrom, and
polycrystalline cubic boron nitride.
30. The cutting element of claim 28, wherein the cavity comprises a
channel extending through an entire thickness of the
polycrystalline abrasive body.
31. The cutting element of claim 28, wherein the cavity extends a
partial thickness into the polycrystalline abrasive body.
32. The cutting element of claim 28, wherein the opening has at
least one dimension of less than 50 microns.
33. The cutting element of claim 28, wherein the at least one
projection comprises a binder content lower than the remaining
substrate.
34. The cutting element of claim 28, wherein the at least one
projection comprises hard particles distinct from the remaining
substrate.
35. The cutting element of claim 28, wherein the at least one
projection comprises a tungsten carbide and diamond composite.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority, under 35 U.S.C. .sctn.119,
to U.S. Patent Application No. 61/081,619, filed on Jul. 17, 2008,
which is herein incorporated by reference in its entirety.
BACKGROUND OF INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates generally to polycrystalline diamond
composites and cutting structures. More particularly, this
invention relates to polycrystalline diamond cutting structures
that having non-planar interfaces and method of forming such
non-planar interfaces.
[0004] 2. Background Art
[0005] Polycrystalline diamond compact ("PDC") cutters have been
used in industrial applications including rock drilling and metal
machining for many years. In a typical application, a compact of
polycrystalline diamond (PCD) (or other superhard material) is
bonded to a substrate material, which is typically a sintered
metal-carbide to form a cutting structure. PCD comprises a
polycrystalline mass of diamonds (typically synthetic) that are
bonded together to form an integral, tough, high-strength mass or
lattice. The resulting PCD structure produces enhanced properties
of wear resistance and hardness, making PCD materials extremely
useful in aggressive wear and cutting applications where high
levels of wear resistance and hardness are desired.
[0006] A PDC cutter may be formed by placing a cemented carbide
substrate into the container of a press. A mixture of diamond
grains or diamond grains and catalyst binder is placed atop the
substrate and treated under high pressure, high temperature
conditions. In doing so, metal binder (often cobalt) migrates from
the substrate and passes through the diamond grains to promote
intergrowth between the diamond grains. As a result, the diamond
grains become bonded to each other to form the diamond layer, and
the diamond layer is in turn bonded to the substrate. The substrate
often comprises a metal-carbide composite material, such as
tungsten carbide. The deposited diamond layer is often referred to
as the "diamond table" or "abrasive layer."
[0007] An example of a drag bit for earth formation drilling using
PDC cutters is shown in FIG. 1. FIG. 1 shows a rotary drill bit 10
having a bit body 12. The lower face of the bit body 12 is formed
with a plurality of blades 14, which extend generally outwardly
away from a central longitudinal axis of rotation 16 of the drill
bit. A plurality of PDC cutters 18 are disposed side by side along
the length of each blade. The number of PDC cutters 18 carried by
each blade may vary. The PDC cutters 18 are individually brazed to
a stud-like carrier (or substrate), which may be formed from
tungsten carbide, and are received and secured within sockets in
the respective blade.
[0008] Common problems that plague cutting elements and
specifically cutters having an ultra hard diamond-like cutting
table such as PCD, polycrystalline cubic boron nitride (PCBN), or
thermally stable polycrystalline diamond (TSP) bonded on a cemented
carbide substrate are chipping, spalling, partial fracturing,
cracking or exfoliation of the cutting table. These problems result
in the early failure of the cutting table and thus, in a shorter
operating life for the cutter.
[0009] It has been thought that these problems, i.e., chipping,
spalling, partial fracturing, cracking, and exfoliation of the
diamond layer may be caused in part by the difference in the
coefficient of thermal expansion between the diamond and the
substrate. Specifically, the problems are thought to be caused by
the abrupt shift in the coefficient of thermal expansion on the
interface between the substrate and the diamond. This abrupt shift
causes the build-up of residual stresses on the cutting layer.
[0010] The cemented carbide substrate has a higher coefficient of
thermal expansion than the diamond. During sintering, both the
cemented carbide body and diamond layer are heated to elevated
temperatures forming a bond between the diamond layer and the
cemented carbide substrate. As the diamond layer and substrate cool
down, the substrate shrinks more than the diamond because of its
higher coefficient of thermal expansion. Consequently, stresses
referred to as thermally induced stresses are formed at the
interface between the diamond and the body.
[0011] Moreover, residual stresses are formed on the diamond layer
from decompression after sintering. The high pressure applied
during the sintering process causes the carbide to compress more
than the diamond layer. After the diamond is sintered onto the
carbide and the pressure is removed, the carbide tries to expand
more than the diamond imposing a tensile residual stress on the
diamond layer.
[0012] In an attempt to overcome these problems, many have turned
to use of non-planar interfaces between the substrate and the
cutting layer. The belief being, that a non-planar interface allows
for a more gradual shift in the coefficient of thermal expansion
from the substrate to the diamond table, thus, reducing the
magnitude of the residual stresses on the diamond. Similarly, it is
believed that the non-planar interface allow for a more gradual
shift in the compression from the diamond layer to the carbide
substrate.
[0013] Accordingly, there exists a continuing need for developments
in non-planar interfaces, and methods of forming non-planar
interfaces, for cutting elements having a polycrystalline abrasive
cutting layer attached to a substrate.
SUMMARY OF INVENTION
[0014] In one aspect, embodiments disclosed herein relate to a
method for forming a cutting element that includes forming at least
one cavity in at least one surface of a polycrystalline abrasive
body; placing the polycrystalline abrasive body adjacent a
substrate such that an opening of at least one cavity is adjacent
the substrate at an interface, wherein an interface surface of the
substrate is non-mating with the polycrystalline abrasive body; and
subjecting the polycrystalline abrasive body and substrate to high
pressure/high temperature conditions.
[0015] In another aspect, embodiments disclosed herein relate to a
method for forming a cutting element that includes forming a
polycrystalline diamond compact of a polycrystalline diamond body
attached to a substrate, where the formation of the polycrystalline
diamond compact includes placing a mixture of diamond particles and
a catalyst material adjacent a substrate; and subjecting the
mixture and substrate to high-pressure/high temperature conditions;
then, once the polycrystalline diamond compact is formed, detaching
the polycrystalline diamond body from the substrate; forming at
least one cavity in at least one surface of the detached
polycrystalline diamond body; placing the polycrystalline abrasive
body adjacent a substrate material such that an opening of at least
one cavity is adjacent the substrate material; and subjecting the
polycrystalline abrasive body and substrate material to high
temperature/high pressure conditions.
[0016] In another aspect, embodiments disclosed herein relate to a
method for forming a cutting element that includes forming at least
one cavity in at least one surface of a polycrystalline abrasive
body; placing the polycrystalline abrasive body adjacent a
substrate precursor material such that an opening of at least one
cavity is adjacent the substrate precursor; and subjecting the
polycrystalline abrasive body and substrate precursor materials to
high pressure/high temperature conditions.
[0017] In another aspect, embodiments disclosed herein relate to a
cutting element that includes a polycrystalline abrasive body; and
a substrate attached to the polycrystalline abrasive body, wherein
the polycrystalline abrasive body comprises, at the interface
between the polycrystalline abrasive body and the substrate, at
least one cavity formed therein, the at least one cavity having an
opening with at least one dimension of less than 1 mm; and wherein
the substrate comprises at least one projection mating the at least
one cavity.
[0018] In yet another aspect, embodiments disclosed herein relate
to a cutting element that includes a polycrystalline abrasive body;
and a substrate attached to the polycrystalline abrasive body,
wherein the polycrystalline abrasive body comprises, at the
interface between the polycrystalline abrasive body and the
substrate, at least one cavity formed therein; and wherein the
substrate comprises at least one projection mating the at least one
cavity, the at least one projection comprising a material
composition distinct from the remaining substrate.
[0019] Other aspects and advantages of the invention will be
apparent from the following description and the appended
claims.
BRIEF DESCRIPTION OF DRAWINGS
[0020] FIG. 1 is an illustration of a PDC drill bit.
[0021] FIGS. 2A-2E show cross-sectional side views of various
embodiments of the present disclosure.
[0022] FIGS. 3A-3B show top views of various embodiments of the
present disclosure.
[0023] FIGS. 4A-4C is an illustration of steps for forming a PDC
cutter in accordance with an embodiment of the present
disclosure.
[0024] FIGS. 5A-5D is an illustration of steps for forming a PDC
cutter in accordance with an embodiment of the present
disclosure.
[0025] FIGS. 6A-6E is an illustration of steps for forming a PDC
cutter in accordance with an embodiment of the present
disclosure.
DETAILED DESCRIPTION
[0026] In one aspect, embodiments disclosed herein relate to
polycrystalline diamond (or other polycrystalline abrasive bodied)
cutting elements and methods of forming non-planar interfaces
between the polycrystalline diamond layer and a substrate. More
specifically, embodiments disclosed herein are directed to
non-planar interfaces resulting from forming cavities in a
polycrystalline abrasive body and attaching the body to a
substrate.
[0027] As used herein, the term "PCD" refers to polycrystalline
diamond that has been formed, at high pressure/high temperature
(HPHT) conditions, through the use of a solvent metal catalyst,
such as those included in Group VIII of the Periodic table.
However, the present disclosure is also directed to polycrystalline
cubic boron nitride (formed from subjecting boron nitride particles
to HPHT conditions) as well as thermally stable polycrystalline
diamond. The term "thermally stable polycrystalline diamond," as
used herein, refers to intercrystalline bonded diamond that
includes a volume or region that has been rendered substantially
free of the solvent metal catalyst used to form PCD, or the solvent
metal catalyst used to form PCD remains in the region of the
diamond body but is otherwise reacted or rendered ineffective in
its ability to adversely impact the bonded diamond at elevated
temperatures as discussed above.
[0028] Forming Polycrystalline Abrasive Bodies
[0029] A polycrystalline diamond body may be formed in a
conventional manner, such as by a high pressure, high temperature
sintering of "green" particles to create intercrystalline bonding
between the particles. "Sintering" may involve a high pressure,
high temperature (HPHT) process. Examples of high pressure, high
temperature (HPHT) process can be found, for example, in U.S. Pat.
Nos. 4,694,918; 5,370,195; and 4,525,178. Briefly, to form the
polycrystalline diamond object, an unsintered mass of diamond
crystalline particles is placed within a metal enclosure of the
reaction cell of a HPHT apparatus. A suitable HPHT apparatus for
this process is described in U.S. Pat. Nos. 2,947,611; 2,941,241;
2,941,248; 3,609,818; 3,767,371; 4,289,503; 4,673,414; and
4,954,139. A metal catalyst, such as cobalt or other Group VIII
metals, may be included with the unsintered mass of crystalline
particles to promote intercrystalline diamond-to-diamond bonding.
The catalyst material may be provided in the form of powder and
mixed with the diamond grains, or may be infiltrated into the
diamond grains during HPHT sintering An exemplary minimum
temperature is about 1200.degree. C. and an exemplary minimum
pressure is about 35 kilobars. Typical processing is at a pressure
of about 45 kbar and 1300.degree. C. Those of ordinary skill will
appreciate that a variety of temperatures and pressures may be
used, and the scope of the present invention is not limited to
specifically referenced temperatures and pressures.
[0030] Diamond grains useful for forming a polycrystalline diamond
body may include any type of diamond particle, including natural or
synthetic diamond powders having a wide range of grain sizes. For
example, such diamond powders may have an average grain size in the
range from submicrometer in size to 100 micrometers, and from 1 to
80 micrometers in other embodiments. Further, one skilled in the
art would appreciate that the diamond powder may include grains
having a mono- or multi-modal distribution.
[0031] Moreover, the diamond powder used to prepare the PCD body
may be synthetic diamond powder or natural diamond powder.
Synthetic diamond powder is known to include small amounts of
solvent metal catalyst material and other materials entrained
within the diamond crystals themselves. Unlike synthetic diamond
powder, natural diamond powder does not include such solvent metal
catalyst material and other materials entrained within the diamond
crystals. It is theorized that that inclusion of materials other
than the solvent catalyst in the synthetic diamond powder can
operate to impair or limit the extent to which the resulting PCD
body can be rendered thermally stable, as these materials along
with the solvent catalyst must also be removed or otherwise
neutralized. Because natural diamond is largely devoid of these
other materials, such materials do not have to be removed from the
PCD body and a higher degree of thermal stability may thus be
obtained. Accordingly, for applications calling for a particularly
high degree of thermal stability, one skilled in the art would
appreciate that the use of natural diamond for forming the PCD body
may be preferred. The diamond grain powder, whether synthetic or
natural, may be combined with or already includes a desired amount
of catalyst material to facilitate desired intercrystalline diamond
bonding during HPHT processing. Suitable catalyst materials useful
for forming the PCD body include those solvent metals selected from
the Group VIII of the Periodic table, with cobalt (Co) being the
most common, and mixtures or alloys of two or more of these
materials. In a particular embodiment, the diamond grain powder and
catalyst material mixture may comprise 85 to 95% by volume diamond
grain powder and the remaining amount catalyst material.
Alternatively, the diamond grain powder can be used without adding
a solvent metal catalyst in applications where the solvent metal
catalyst can be provided by infiltration during HPHT processing
from the adjacent substrate or adjacent other body to be bonded to
the PCD body.
[0032] The diamond powder may be combined with the desired catalyst
material, and the reaction cell is then placed under processing
conditions sufficient to cause the intercrystalline bonding between
the diamond particles. In the event that the formation of a PCD
compact comprising a substrate bonded to the PCD body is desired, a
selected substrate is loaded into the container adjacent the
diamond powder mixture prior to HPHT processing. Additionally, in
the event that the PCD body is to be bonded to a substrate, and the
substrate includes a metal solvent catalyst, the metal solvent
catalyst needed for catalyzing intercrystalline bonding of the
diamond may be provided by infiltration, in which case is may not
be necessary to mix the diamond powder with a metal solvent
catalyst prior to HPHT processing.
[0033] In an example embodiment, the device is controlled so that
the container is subjected to a HPHT process comprising a pressure
in the range of from 5 to 7 GPa and a temperature in the range of
from about 1320 to 1600.degree. C., for a sufficient period of
time. During this HPHT process, the catalyst material in the
mixture melts and infiltrates the diamond grain powder to
facilitate intercrystalline diamond bonding. During the formation
of such intercrystalline diamond bonding, the catalyst material may
migrate into the interstitial regions within the microstructure of
the so-formed PCD body that exists between the diamond bonded
grains It should be noted that if too much additional non-diamond
material is present in the powdered mass of crystalline particles,
appreciable intercrystalline bonding is prevented during the
sintering process. Such a sintered material where appreciable
intercrystalline bonding has not occurred is not within the
definition of PCD. Following such formation of intercrystalline
bonding, a polycrystalline diamond body may be formed that has, in
one embodiment, at least about 80 percent by volume diamond, with
the remaining balance of the interstitial regions between the
diamond grains occupied by the catalyst material. In other
embodiments, such diamond content may comprise at least 85 percent
by volume of the formed diamond body, and at least 90 percent by
volume in yet another embodiment. However, one skilled in the art
would appreciate that other diamond densities may be used in
alternative embodiments. Thus, the polycrystalline diamond bodies
being used in accordance with the present disclosure include what
is frequently referred to in the art as "high density"
polycrystalline diamond.
[0034] Further, one skilled in the art would appreciate that,
frequently, a diamond layer is sintered to a carbide substrate by
placing the diamond particles on a preformed substrate in the
reaction cell and sintering. However the present disclosure is not
so limited. Rather, the polycrystalline diamond bodies having
cavities formed in accordance with the present disclosure may or
may not be formed attached to a substrate. If the polycrystalline
diamond body is formed attached to a carbide substrate, the
substrate may be removed or detached from the polycrystalline
diamond body so that cavities may be formed therein, and a
non-planar interface may result when the diamond body reattached to
a substrate.
[0035] In various embodiments, a formed PCD body having a catalyst
material in the interstitial spaces between bonded diamond grains
is subjected to a leaching process (before or after formation of
the cavities), whereby the catalyst material is removed from the
PCD body. As used herein, the term "removed" refers to the reduced
presence of catalyst material in the PCD body, and is understood to
mean that a substantial portion of the catalyst material no longer
resides in the PCD body. However, one skilled in the art would
appreciate that trace amounts of catalyst material may still remain
in the microstructure of the PCD body within the interstitial
regions and/or adhered to the surface of the diamond grains.
Alternatively, rather than actually removing the catalyst material
from the PCD body or compact, the selected region of the PCD body
or compact can be rendered thermally stable by treating the
catalyst material in a manner that reduces or eliminates the
potential for the catalyst material to adversely impact the
intercrystalline bonded diamond at elevated temperatures. For
example, the catalyst material can be combined chemically with
another material to cause it to no longer act as a catalyst
material, or can be transformed into another material that again
causes it to no longer act as a catalyst material. Accordingly, as
used herein, the terms "removing substantially all" or
"substantially free" as used in reference to the catalyst material
is intended to cover the different methods in which the catalyst
material can be treated to no longer adversely impact the
intercrystalline diamond in the PCD body or compact with increasing
temperature.
[0036] The quantity of the catalyst material remaining in the
material PCD microstructure after the PCD body has been subjected
to a leaching treatment may vary, for example, on factors such as
the treatment conditions, including treatment time, as well as
whether the cavities are formed before or after leaching. A U.S.
Patent Application entitled "Methods of Forming Thermally Stable
Polycrystalline Diamond Cutters," filed concurrently herewith
(Attorney Docket No. 05516/392001), which is assigned to the
present assignee and herein incorporated by reference in its
entirety, is directed to the use of forming cavities or other acid
infusion pathways to reduce leaching times. Further, one skilled in
the art would appreciate that it may be desired in certain
applications to allow a small amount of catalyst material to stay
in the PCD body. In a particular embodiment, the PCD body may
include up to 1-2 percent by weight of the catalyst material.
However, one skilled in the art would appreciate that the amount of
residual catalyst present in a leached PCD body may depend on the
diamond density of the material, and body thickness.
[0037] A conventional leaching process involves the exposure of an
object to be leached with a leaching agent, such as described in
U.S. Pat. No. 4,224,380, which is herein incorporated by reference
in its entirety. In select embodiments, the leaching agent may be a
weak, strong, or mixtures of acids. In other embodiments, the
leaching agent may be a caustic material such as NaOH or KOH.
Suitable acids may include, for example, nitric acid, hydrofluoric
acid, hydrochloric acid, sulfuric acid, phosphoric acid, or
perchloric acid, or combinations of these acids. In addition,
caustics, such as sodium hydroxide and potassium hydroxide, have
been used to the carbide industry to digest metallic elements from
carbide composites. In addition, other acidic and basic leaching
agents may be used as desired. Those having ordinary skill in the
art will appreciate that the molarity of the leaching agent may be
adjusted depending on the time desired to leach, concerns about
hazards, etc.
[0038] Further, one skilled in the art would appreciate that the
same techniques used with polycrystalline diamond may be applied to
polycrystalline cubic boron nitride (PCBN). Similar to
polycrystalline diamond, PCBN may be formed by sintering boron
nitride particles (typically CBN) via a HPHT process, similar to
those for PCD, to sinter "green" particles to create
intercrystalline bonding between the particles. CBN refers to an
internal crystal structure of boron atoms and nitrogen atoms in
which the equivalent lattice points are at the corner of each cell.
Boron nitride particles typically have a diameter of approximately
one micron and appear as a white powder. Boron nitride, when
initially formed, has a generally graphite-like, hexagonal plate
structure. When compressed at high pressures (such as 106 psi), CBN
particles will be formed with a hardness very similar to diamond,
and a stability in air at temperatures of up to 1400.degree. C.
[0039] According to one embodiment of the invention, PCBN may
include a content of boron nitride of at least 50% by volume; at
least 70% by volume in another embodiment; at least 85% by volume
in yet another embodiment. In another embodiment, the cubic boron
nitride content may range from 50 to 80 percent by volume, and from
80 to 99.9 percent by volume in yet another embodiment. The
residual content of the polycrystalline cubic boron nitride
composite may include at least one of Al, Si, and mixtures thereof,
carbides, nitrides, carbonitrides and borides of Group IVa, Va, and
VIa transition metals of the periodic table. Mixtures and solid
solutions of Al, Si, carbides, nitrides, carbonitrides and borides
of Group IVa, Va, and VIa transition metals of the periodic table
may also be included.
[0040] Formation on Non-Planar Interface
[0041] Thus, formation of a cutting element having a non-planar
interface between the abrasive cutting layer and substrate may
involve any of the above-described abrasive bodies. Conventionally,
formation of a non-planar interface involves forming such geometry
in the substrate, and combining the substrate with diamond (or
other super hard) particles in a reaction can and subjecting the
can contents to HPHT conditions to form the polycrystalline
structure. However, the techniques of the present disclosure rely
on forming a desired geometry (cavity) in a pre-formed
polycrystalline layer, and then attaching the polycrystalline layer
with desired interface geometry to a substrate (or forming the
substrate attached to the polycrystalline layer having the desired
geometry).
[0042] Cavities formed by removal of PCD material may include
partial cavities (cavities extending partially into the diamond
layer) and/or through-cavities or channels (cavities extending the
entire thickness of the diamond layer). Such cavities may be formed
using any technique known in the art of cutting diamond, including,
for example, methods such as EDM, laser micro machining, ion beam
milling (also referred to as ion bombardment etching), etc.
Alternatively, the cavity may be formed by incorporation of an
aiding material into the diamond mixture prior to sintering, where
the aiding material may be removed by chemical or physical methods
prior to leaching, such that once subsequently removed, cavities
are present in the polycrystalline diamond body. For example, a
tungsten carbide aiding material may be formed in the diamond body,
and then subsequently removed by machining or other physical
methods so that a cavity remains in the diamond body to allow for
the formation of the non-planar interface. Further, aiding
materials other than tungsten carbide, such as other ceramics, may
also easily be used so long as the aiding material is removable by
physical or chemical methods. Use of such an aiding material may be
desirable if the aiding material is more easily removed than
cutting diamond.
[0043] Referring to FIGS. 2A-2E, various embodiments of PCD bodies
30 having cavities 35 formed therein are shown. As shown in FIG.
2A, cavities 35 are through-cavities or channels, extending the
entire thickness or depth of PCD body 30, from a top surface 31 to
a bottom surface 33. In FIG. 2B, cavities 35 are partial cavities,
extending partially from bottom surface 33 a depth less than top
surface 31. Moreover, while FIGS. 2A and 2B show cavities 35 formed
perpendicular to surfaces 31, 33, the present invention is not so
limited. Rather, as shown in FIGS. 2C and 2D, such cavities 35 may
extend into or through PCD body 30 at an angle to surfaces 31, 33.
Additionally, such cavities 35 may take any geometrical (regular or
irregular) shape or form, including for example, having a generally
equal or varying (e.g., cavity 35 may be a dimple as shown in FIGS.
2D and 2E) diameter along the length of the cavity 35, as well as
any peaks, valleys, grooves, ridges, etc., or any other shape that
may be formed in a substrate in conventional non-planar interface
techniques. Additionally, as shown by comparing the general
representative size of the various cavities 35 shown in FIGS.
2A-2E, cavities 35 may be selected to have different general
relative dimensions depending, for example, on the methods by which
the cavities 35 are being formed, among other design
considerations. Thus, in some embodiments, for example, as shown in
FIG. 2E, a cavity 35 may be selected to have a generally large
diameter at the intersection between the cavity and a surface 33 of
the PCD body 30, ranging as large as the diameter of the cutter or
one-half the diameter of the PCD body 30, or may be smaller as
illustrated shown in FIGS. 2A-2D. In particular embodiments, the
diameters (or general dimension for non-circular cavity openings)
of the cavities may range from millimeter scale (up to 3 mm in some
embodiments) to microscale (less than 1 mm and less than 50
microns) to nanoscale (down to 100, 50, or 10 nm in various
embodiments). In an even more particular embodiment, cavities of
diameter ranging from 10 microns to 1 mm (or to 0.5 mm in another
embodiment) may be formed in the diamond body. However, one skilled
in the art would appreciate that the selected size may be based on
factors such as the size of the PCD body, the techniques by which
the cavities are formed, any effect on the material and mechanical
properties of the PCD body, etc. It is also within the scope of the
present disclosure that various combinations of type, number,
shape, size of cavities may be made, such as shown in FIG. 2D.
[0044] Moreover, there is also no limit on the placement or pattern
of the cavities formed in the PCD body. For example, as shown in
FIGS. 3A and 3B, the pathways 35 may take any regular array of even
spaced cavities or form a pattern of concentric circles. However,
the cavities may also be randomly distributed across a PCD
body.
[0045] Further, as mentioned above, while the above discussion has
applied to PCD cutting elements or bodies, those having ordinary
skill in the art will appreciate that these techniques may be more
generally applied to any material that has a need for a non-planar
interface. In a particular embodiment, the PCD bodies may be at
least 1 mm thick, and at least 1.5 or 2 mm thick in alternate
embodiments.
[0046] Further after such "free-standing" PCD bodies are having
cavities formed therein, the PCD bodies may then be attached (or
reattached) to a substrate and form the non-planar interface, to
facilitate attached to a bit, cutting tool, or other end use, for
example. Such methods of reattachment may include sintering a PCD
body with a substrate in a second HPHT sintering step, such as
discussed in U.S. Patent Publication No. 2008/0223623, which is
assigned to the present assignee and herein incorporated by
reference in its entirety. The HPHT sintering used to attach a
diamond body to the substrate may be performed in a similar manner
as described above with respect to formation of polycrystalline
diamond, but in particular embodiments, such conditions may include
a temperature ranging from 1350 to 1500.degree. C. and a pressure
ranging from 4 to 7 GPa. When attaching a PCD body to a substrate,
the PCD body may be placed such the surface intersecting the
openings of the cavities is placed adjacent the substrate.
Alternatively, the substrate may be formed during the attachment
stage by placing powder for forming the substrate adjacent the
surface intersecting the openings of the cavities, and
sintering.
[0047] Thus, attachment or (reattachment) of the PCD body to a
substrate may be achieved by placing the two pieces together and
subjecting the two to sintering conditions to join the two bodies
together. In embodiments in which the pathway openings are placed
adjacent the substrate upper surface, during and due to the
sintering conditions, some amount of carbide materials from the
substrate may "bulge" into the open space of the cavities which
have been formed in the PCD body, forming mechanical locking known
in the art of non-planar interfaces. Alternatively, an intermediate
material such as a refractory powder (tungsten or tungsten carbide
powder in particular embodiments) may be used to fill at least a
portion of the cavities in the PCD, such that the refractory powder
will be sintered and bond together with the carbide substrate
during the sintering conditions. In some embodiments, the
intermediate material may also include diamond particles provided
therewith such that a gradient may exist at the non-planar
interface. In addition to a mechanical locking, the inclusion of
diamond particles in the cavities may also allow for a chemical
locking, through the formation of diamond-to-diamond bonds during
the HPHT sintering process. Other intermediate materials may also
be used.
[0048] In such embodiments, the substrate may have a substantially
planar upper surface or may have a non-planar but non-mating upper
surface. In the embodiment having the non-planar, but non-mating
upper surface to the substrate, a diamond body may have a "larger"
cavity than the projections that exist on the substrate upper
surface. Thus, while the surfaces are non-mating (defined herein to
mean that there is a gap of at least 10% of one dimension of the
cavities between a surface of the diamond body and a surface of the
substrate), the geometries would align based on location at the
interface. Further, in such an embodiment, the intermediate
material may be used to fill the gaps between the corresponding
cavity and projection to aid in the attachment process. Yet another
alternative may rely on addition of substrate precursors (a carbide
powder and binder material, such as a Group VIII metal) to the PCD
body, forming the substrate body during the attachment process.
[0049] Referring to FIGS. 4A-4C, collectively, an embodiment of the
process steps of the present disclosure is shown. As shown in FIG.
4A, a polycrystalline diamond body 30 may be formed or provided.
Alternatively, a polycrystalline diamond body 30 may be formed
without a substrate. Formation of cavities 35 in the
polycrystalline diamond body 30 may be achieved (in FIG. 4B) as
described above. Further, as shown in FIG. 4C, the polycrystalline
diamond body 30 may then be attached (or reattached) to a substrate
36 through sintering. During this attachment, the openings of
cavities 35 are placed adjacent the substrate so that after
reattachment sintering, a non-planar interface may be formed with a
portion of substrate 37 filling any previously open space of
cavities 35. As shown in FIG. 4C, the portion of substrate 37
filling the previously open space of cavities 35 may vary in some
manner from the remaining portion of substrate 36. Such variations
may result depending on the attachment technique selected.
Specifically, when an intermediate material is used to fill at
least a portion of cavities 35, the intermediate material may vary
in some manner as compared to the preformed substrate being
attached (or from precursor substrate materials). Such distinctions
may lie in the binder content, powder type (e.g., tungsten or
tungsten carbide alone or in combination with diamond powder) in
amount, particle size, carbide type, etc. By using an intermediate
material that varies from the remaining substrate, a gradient may
be formed at the interface, as described above. Alternatively, the
portion 37 of substrate may be identical to the remaining portion
of substrate 36.
[0050] Referring to FIGS. 5A-5D, collectively, another embodiment
of the process steps of the present disclosure is shown. As shown
in FIG. SA, a polycrystalline diamond body 30 having a catalyzing
material found in the interstitial regions between the diamond
grains (as described above) may be formed attached to a carbide
substrate 34. The polycrystalline diamond body 30 may be detached
(shown in FIG. 5B) from the substrate 34 prior to formation of
cavities 35 by techniques disclosed herein (shown in 5C). Further,
as shown in FIG. 5D, the polycrystalline diamond body 30 may then
be attached (or reattached) to a substrate 36 through sintering,
and form a non-planar interface. In the embodiment shown in FIG.
5D, the portion 37 of substrate filling any previously open space
of pathways 35 may be identical to the remaining portion of
substrate 36.
[0051] Referring to FIGS. 6A-6E, collectively, yet another
embodiment of the process steps of the present disclosure is shown.
As shown in FIG. 6A, a polycrystalline diamond body 30 having a
catalyzing material found in the interstitial regions between the
diamond grains (as described above) may be formed attached to a
carbide substrate 34. The polycrystalline diamond body 30 may be
detached (shown in FIG. 6B) from the substrate 34 prior to
formation of cavities 35 (shown in FIG. 6C) by techniques disclosed
herein. Leaching of polycrystalline diamond body 30 removes at
least a substantial portion of the catalyzing material from the
interstitial regions, leaving a polycrystalline diamond body 32
(shown in FIG. 6D) having voids (other than cavities 35) dispersed
in the diamond matrix or regions that were previously occupied by
catalyzing material. Alternatively, leaching may occur prior to
formation of cavities 35 in polycrystalline diamond body 30.
Further, as shown in FIG. 6E, the polycrystalline diamond body 32
may then be attached (or reattached) to a substrate 36 through
sintering, and form a non-planar interface. In the embodiment shown
in FIG. 5D, the portion 37 of substrate filling any previously open
space of pathways 35 may be identical to the remaining portion of
substrate 36.
[0052] Embodiments of the present disclosure may provide for at
least one of the following advantages. Conventional non-planar
interfaces may be formed through formation of a geometrical surface
in the substrate, and then placing diamond powder adjacent the
geometrical surface to form a diamond layer having a mating surface
during HPHT conditions. In accordance with embodiments of the
present disclosure, a non-planar interface may be achieved by
forming such geometrical surface in the diamond or other abrasive
layer, and then attaching a substrate to the preformed diamond
layer. Such methods may be particularly useful when a non-planar
interface for a thermally stable cutting element formed by treating
a "free-standing" PCD wafer is desired to increase the impact
strength and reduce incidence of delamination.
[0053] While the invention has been described with respect to a
limited number of embodiments, those skilled in the art, having
benefit of this disclosure, will appreciate that other embodiments
can be devised which do not depart from the scope of the invention
as disclosed herein. Accordingly, the scope of the invention should
be limited only by the attached claims.
* * * * *