U.S. patent application number 12/345770 was filed with the patent office on 2009-12-10 for test circuit device for semiconductor memory apparatus.
This patent application is currently assigned to HYNIX SEMICONDUCTOR INC.. Invention is credited to Seung Bong Kim.
Application Number | 20090303818 12/345770 |
Document ID | / |
Family ID | 41400201 |
Filed Date | 2009-12-10 |
United States Patent
Application |
20090303818 |
Kind Code |
A1 |
Kim; Seung Bong |
December 10, 2009 |
TEST CIRCUIT DEVICE FOR SEMICONDUCTOR MEMORY APPARATUS
Abstract
A test circuit device for a semiconductor memory device includes
a main word line driving unit that generates a signal that swings
between a driving voltage and one of a first voltage and a second
voltage in response to a main decoding signal and a test mode
signal, a local driving unit that generates a signal that swings
between the driving voltage and one of the first voltage and the
second voltage in response to a local decoding signal and the test
mode signal, a driving voltage supplying unit that receives an
output of the local driving unit and the test mode signal to supply
a voltage that swings between the driving voltage and the first
voltage, and a sub-word line driver that receives an output of the
main word line driving unit and an output of the driving voltage
supplying unit to determine whether the sub-word line is enabled or
not.
Inventors: |
Kim; Seung Bong; (Ichon,
KR) |
Correspondence
Address: |
BAKER & MCKENZIE LLP;PATENT DEPARTMENT
2001 ROSS AVENUE, SUITE 2300
DALLAS
TX
75201
US
|
Assignee: |
HYNIX SEMICONDUCTOR INC.
Ichon-shi
KR
|
Family ID: |
41400201 |
Appl. No.: |
12/345770 |
Filed: |
December 30, 2008 |
Current U.S.
Class: |
365/201 ;
365/230.06 |
Current CPC
Class: |
G11C 29/02 20130101;
G11C 29/025 20130101; G11C 11/401 20130101; G11C 2029/1202
20130101 |
Class at
Publication: |
365/201 ;
365/230.06 |
International
Class: |
G11C 29/00 20060101
G11C029/00; G11C 8/08 20060101 G11C008/08 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 4, 2008 |
KR |
10-2008-0052697 |
Claims
1. A test circuit device for a semiconductor memory apparatus,
comprising: a main word line driving unit that generates a signal
that swings between a driving voltage and one of a first voltage
and a second voltage in response to a main decoding signal and a
test mode signal; a local driving unit that generates a signal that
swings between the driving voltage and one of the first voltage and
the second voltage in response to a local decoding signal and the
test mode signal; a driving voltage supplying unit that receives an
output of the local driving unit and the test mode signal to supply
a voltage that swings between the driving voltage and the first
voltage; and a sub-word line driver that receives an output of the
main word line driving unit and an output of the driving voltage
supplying unit to determine whether the sub-word line is enabled or
not.
2. The test circuit device of claim 1, wherein the main word line
driving unit includes: a first signal selector that supplies a
signal that swings between the driving voltage and the one of the
first voltage and the second voltage in response to the main
decoding signal; and a first low voltage supplying unit that
supplies one of the first voltage and the second voltage to the
first signal selector in response to the test mode signal.
3. The test circuit device of claim 2, wherein the first low
voltage supplying unit supplies the second voltage to the first
signal selector when the test mode signal is enabled, and supplies
the first voltage to the first signal selector when the test mode
signal is disabled.
4. The test circuit device of claim 2, wherein the first low
voltage supplying unit includes: a first NMOS transistor having a
gate terminal receiving the test mode signal, a source terminal
receiving the second voltage, and a drain terminal connected to a
first node; and a second NMOS transistor having a gate terminal
receiving an inverted test mode signal, a source terminal receiving
the first signal, and a drain terminal connected to the first node,
wherein one of the first voltage and the second voltage is supplied
to the first signal selector through the first node.
5. The test circuit device of claim 1, wherein the local driving
unit includes: a second signal selector that supplies a signal that
swings between the driving voltage and one of the first voltage and
the second voltage in response to the local decoding signal; and a
second low voltage supplying unit that supplies one of the first
voltage and the second voltage to the second signal selector in
response to the test mode signal.
6. The test circuit device of claim 5, wherein the second low
voltage supplying unit supplies the second voltage to the second
signal selector when the test mode signal is enabled, and supplies
the first voltage to the second signal selector when the test mode
signal is disabled.
7. The test circuit device of claim 5, wherein the second low
voltage supplying unit includes: a third NMOS transistor having a
gate terminal receiving the test mode signal, a source terminal
receiving the second voltage, and a drain terminal connected to a
second node; and a fourth NMOS transistor having a gate terminal
receiving the inverted test mode signal, a source terminal
receiving the first signal, and a drain terminal connected to the
second node, wherein one of the first voltage and the second
voltage is supplied to the second signal selector through the
second node.
8. The test circuit device of claim 1, wherein the driving voltage
supplying unit includes: a voltage selector that supplies the
voltage that swings between the driving voltage and the first
voltage in response to the output of the local driving unit; and a
detector that determines to supply the driving voltage to the
voltage selector in response to the test mode signal.
9. The test circuit device of claim 8, wherein the detector does
not supply the driving voltage to the voltage selector when the
test mode signal is enabled, and supplies the driving voltage to
the signal selector when the test mode signal is disabled.
10. The test circuit device of claim 1, wherein the first voltage
includes a ground voltage.
11. The test circuit device of claim 1, wherein the second voltage
includes a negative bias voltage that is lower than the ground
voltage.
12. The test circuit device of claim 1, wherein the sub-word line
driver includes: a third signal selector that outputs a signal that
swings between the output of the driving voltage supplying unit and
the first voltage in response to the output of the main word line
driving unit; and a signal supplying unit that supplies the output
of the third signal selector to the sub-word line.
13. A test circuit device for a semiconductor memory apparatus,
comprising: a main word line driving unit that generates a signal
that swings between a driving voltage and one of a first voltage
and a second voltage in response to a main decoding signal and a
test mode signal; a first low voltage controlling unit that
supplies the second voltage to the main word line driving unit in
response to the test mode signal; a local driving unit that
generates a signal that swings between the driving voltage and one
of the first voltage and the second voltage in response to a local
decoding signal and the test mode signal; a second low voltage
controlling unit that supplies the second voltage to the local
driving unit in response to the test mode signal; a driving voltage
supplying unit that receives an output of the local driving unit
and the test mode signal to supply a voltage that swings between
the driving voltage and the first voltage; and a sub-word line
driver that receives an output of the main word line driving unit
and an output of the driving voltage supplying unit to determine
whether the sub-word line is enabled or not.
14. The test circuit device of claim 13, wherein the main word line
driving unit supplies the signal that swings between the driving
voltage and the first voltage when the test mode signal is
disabled, and supplies the signal that swings between the driving
voltage and the second voltage when the test mode signal is
enabled.
15. The test circuit device of claim 14, wherein the first low
voltage controlling unit supplies the second voltage to the main
word line driving unit when the test mode signal is enabled
16. The test circuit device of claim 13, wherein the local driving
unit supplies the signal that swings between the driving voltage
and the first voltage when the test mode signal is disabled, and
supplies the signal that swings between the driving voltage and the
second voltage when the test mode signal is enabled.
17. The test circuit device of claim 16, wherein the second low
voltage controlling unit supplies the second voltage to the local
driving unit when the test mode signal is enabled.
18. The test circuit device of claim 13, wherein the driving
voltage supplying unit includes: a voltage selector that supplies
the voltage that swings between the driving voltage and the first
voltage in response to the output of the local driving unit; and a
detector that determines to supply the driving voltage to the
voltage selector in response to the test mode signal.
19. The test circuit device of claim 18, wherein the detector does
not supply the driving voltage to the voltage selector when the
test mode signal is enabled, and supplies the driving voltage to
the signal selector when the test mode signal is disabled.
20. The test circuit device of claim 13, wherein the first voltage
includes a ground voltage.
21. The test circuit device of claim 13, wherein the second voltage
includes a negative bias voltage that is lower than the ground
voltage.
22. The test circuit device of claim 13, wherein the sub-word line
driver includes: a signal selector that outputs a signal that
swings between the output of the driving voltage supplying unit and
the first voltage in response to the output of the main word line
driving unit; and a signal supplying unit that supplies the output
of the signal selector to the sub-word line.
Description
[0001] The present application claims priority under 35 U.S.C.
.sctn.119(a) to Korean application number 10-2008-0052697, filed on
Jun. 4, 2008, in the Korean Intellectual Property Office, which is
incorporated herein by reference in its entirety as if set forth in
full.
BACKGROUND
[0002] 1. Technical Field
[0003] The embodiments described herein relate to a design of a
semiconductor memory apparatus, and in particular, to a test
circuit device for a semiconductor memory apparatus.
[0004] 2. Related Art
[0005] As the capacity of semiconductor memory devices increases,
the total number of individual memory cells within a given area of
the semiconductor memory apparatus increases. Accordingly, the
probability of a micro-bridge being established between adjacent
word lines WL and bit lines BL increases.
[0006] FIG. 1 is a schematic circuit diagram of a conventional
micro-bridge detection circuit of a semiconductor memory apparatus.
In FIG. 1, a micro-bridge detection circuit 11 of a semiconductor
memory apparatus includes a main word line driver 10, a local
driver 20, a driving voltage supplying unit 30, and a sub word line
driver 40.
[0007] The main word line driver 10 includes a first inverter
circuit 11 that receives a main decoding signal `MDEC` to supply a
signal that swings between a driving voltage VPP and a ground
voltage VSS to the sub-word line driver 40. The local driver 20
includes a second inverter 21 that receives a local decoding signal
`LDEC` to supply a signal that swings between the driving voltage
VPP and the ground voltage VSS to the driving voltage supplying
unit 30. The driving voltage supplying unit 30 receives an output
signal `LDB` from the local driver 20 and a word floating test mode
signal `TWLFLOAT`, and supplies the driving voltage VPP as an
output signal `LD` to the sub-word line driver 40. The sub-word
line driver 40 determines whether or not the sub-word line SWL is
enabled in response to output signals `MWLB`, `LDB`, and `LD` of
the main word line driver 10, the local driver 20, and the driving
voltage supplying unit 30, respectively.
[0008] The unit arrangement of FIG. 1 is configured by a plurality
of cell arrays in accordance with the configuration of the memory
apparatus. For purposes of explanation, the cell array of FIG. 1 is
added to assist with describing operations of the micro-bridge
detection circuit 1, and a minute bridge that is generated due to
the presence of the micro-bridge between the word line and the bit
line is schematically represented as a resistor MB.
[0009] FIG. 2 is a diagram representing conventional operation
signals of a circuit according to the presence/absence of a
micro-bridge. In FIGS. 1 and 2, in a state where data "0" is stored
in a memory cell of a semiconductor memory apparatus at an initial
stage, when an active command signal `ACT` is input, the main
decoding signal `MDEC` and the local decoding signal `LDEC` are
enabled at a high level. The first inverter circuit 11 of the main
word line driver 10, to which the main decoding signal `MDEC` is
input, supplies an output signal `MWLB` that is enabled at a low
level to the sub-word line 40. The second inverter circuit 21 of
the local driver 20, to which the local decoding signal `LDEC` is
input, supplies an output signal `LDB` that is enabled at a low
level to the driving voltage supplying unit 30. In this case, the
word line floating test mode signal `TWLFLOAT` is maintained to be
disabled at a low level. Thus, a PMOS transistor P2 that receives a
low word line floating test mode signal `TWLFLOAT` is turned ON,
and the driving voltage supplying unit 30 that receives the output
signal `LDB` of the local driver, which is enabled at a low level,
supplies the driving voltage VPP to the sub-word line driver
40.
[0010] The sub-word line driver 40 causes the sub-word line SWL to
be enabled in response to the output signal `MWLB` of the main word
line driver 10 that is enabled at a low level and the output signal
`LDB` of the driving voltage supplying unit 30. When the sub-word
line SWL is enabled, a bit line and a bit (bar) BL line are
amplified by a bit line sense amplifier. In addition, after the
charge sharing operation, data "0" is stored in the memory cell
node. In this case, if the word line floating test mode signal
`TWLFLOAT` is enabled at a high level, then the PMOS transistor P2
of the driving voltage supplying unit 30 that receives the word
line floating test mode signal `TWLFLOAT` through a gate terminal
is turned OFF. Thus, the driving voltage VPP that is supplied to
the sub-word line driver 40 is intercepted and the sub-word line
SWL is in a floating state. If the floating state is maintained for
a long time period, the micro-bridge MB is generated between the
sub-word line and the bit line so that the level of the sub-word
line SWL is reduced to the ground voltage VSS level. Specifically,
a current path is generated from the sub-word line SWL to the bit
line so that the level of the sub-word line SWL is reduced to the
ground voltage VSS level.
[0011] In the floating state, if data "1" is intended to be written
into a memory cell by a write command, then the data "1" is
transmitted to the bit line. However, since the level of the
sub-word line SWL is reduced to the ground voltage level VSS, the
memory cell node cannot store the data "1", and instead holds data
"0". After completing the write operation, if the precharge command
PCG is performed, then the word line floating test mode signal
`TWLFLOAT` is disabled. Next, when the active command is input
again, the memory cell fails to read the data "1", and thus,
indicates that the micro-bridge MB is present. In contrast, if the
micro-bridge MB is not present, then the sub-word line SWL is
maintained at the driving voltage VPP level. Thus, the data "1" can
be successfully stored in the memory cell.
[0012] However, although the first, second, and third NMOS
transistors N1, N2, and N3 are turned OFF when the sub-word line
SWL is enabled, a leakage current exists due to the characteristics
of the first, second, and third NMOS transistors N1, N2, and N3 in
the turned OFF state. Thus, even when the micro-bridge MB is not
present, the level of the sub-word line SWL will be reduced to the
ground voltage VSS level due to the leakage current. For example,
since the leakage current caused by the NMOS transistors N1, N2,
and N3 causes the level of the sub-word line SWL to be reduced to
the ground voltage level VSS, even in a normal state when the
micro-bridge MB is not present, it may be recognized that the
micro-bridge MB is present, thereby making it difficult to exactly
detect the presence of the micro-bridge MB.
SUMMARY
[0013] A test circuit device for a semiconductor memory apparatus
capable of exactly detecting the presence of the micro-bridge is
described herein.
[0014] In one aspect, test circuit device for a semiconductor
memory apparatus includes a main word line driving unit that
generates a signal that swings between a driving voltage and one of
a first voltage and a second voltage in response to a main decoding
signal and a test mode signal, a local driving unit that generates
a signal that swings between the driving voltage and one of the
first voltage and the second voltage in response to a local
decoding signal and the test mode signal, a driving voltage
supplying unit that receives an output of the local driving unit
and the test mode signal to supply a voltage that swings between
the driving voltage and the first voltage, and a sub-word line
driver that receives an output of the main word line driving unit
and an output of the driving voltage supplying unit to determine
whether the sub-word line is enabled or not.
[0015] In other aspects, test circuit device of a semiconductor
memory apparatus includes a main word line driving unit that
generates a signal that swings between a driving voltage and one of
a first voltage and a second voltage in response to a main decoding
signal and a test mode signal, a first low voltage controlling unit
that supplies the second voltage to the main word line driving unit
in response to the test mode signal, a local driving unit that
generates a signal that swings between the driving voltage and one
of the first voltage and the second voltage in response to a local
decoding signal and the test mode signal, a second low voltage
controlling unit that supplies the second voltage to the local
driving unit in response to the test mode signal, a driving voltage
supplying unit that receives an output of the local driving unit
and the test mode signal to supply a voltage that swings between
the driving voltage and the first voltage; and a sub-word line
driver that receives an output of the main word line driving unit
and an output of the driving voltage supplying unit to determine
whether the sub-word line is enabled or not.
[0016] These and other features, aspects, and embodiments are
described below in the section "Detailed Description."
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Features, aspects, and embodiments are described in
conjunction with the attached drawings, in which:
[0018] FIG. 1 is a schematic circuit diagram of a conventional
micro-bridge detection circuit of a semiconductor memory
apparatus;
[0019] FIG. 2 is a diagram representing conventional operation
signals of a circuit according to the presence/absence of a
micro-bridge;
[0020] FIG. 3 is a schematic circuit diagram of an exemplary test
circuit device of a semiconductor memory apparatus according to one
embodiment.
[0021] FIG.4 is a schematic circuit diagram of an exemplary test
circuit device of a semiconductor memory apparatus according to
other embodiment.
DETAILED DESCRIPTION
[0022] FIG. 3 is a schematic circuit diagram of an exemplary test
circuit device for a semiconductor memory apparatus according to
one embodiment. In FIG. 3, a test circuit device 1 for a
semiconductor memory apparatus can be configured to include a main
word line driving unit 100, a local driving unit 200, a driving
voltage supplying unit 30, and a sub-word line driver 40.
[0023] The main word line driving unit 100 can output a signal that
swings between a high voltage and a low voltage in response to a
main decoding signal `MDEC` and a test mode signal `TWLFLOAT` to
supply an output signal `MWLB` to the sub-word line driver 40.
Here, for example, the high voltage may serve as a driving voltage
VPP and the low voltage may serve as a first voltage or a second
voltage. When the main decoding signal `MDEC` is enabled, according
to whether the test mode signal `TWLFLOAT` is enabled or not, the
main word line driving unit 100 can supply the first voltage or the
second voltage to the sub-word line driver 40. In addition, when
the main decoding signal `MDEC` is disabled, the driving voltage
VPP can be supplied to the sub-word line driver 40. Accordingly,
for example, the first voltage can be the ground voltage VSS and
the second voltage can be a negative bias voltage VNB that is lower
than the ground voltage VSS. Hereinafter, for purposes of
explanation, the first voltage refers to the ground voltage VSS,
and the second voltage refers to the negative bias voltage VNB.
[0024] If the test mode signal `TWLFLOAT` is enabled, then the main
word line driving unit 100 can supply the second voltage, i.e., the
negative bias voltage VNB, as a low voltage. Accordingly, it is
possible to reduce the OFF leakage current of the NMOS transistors
of the test circuit device 1. Accordingly, with the reduction of
the OFF leakage current, the micro-bridge MB present between the
bit line and the word line can be precisely detected.
[0025] The local driving unit 200 can provide an output signal
`LDB` to the driving voltage supplying unit 30 that swings between
the high voltage and the low voltage in response to the local
decoding signal `LDEC` and the test mode signal `TWLFLOAT`. For
example, the high voltage can be the driving voltage VPP and the
low voltage can be the first voltage VSS or the second voltage VNB.
When the local decoding signal `LDEC` is enabled, according to
whether the test mode signal `TWLFLOAT` is enabled or not, the
local driving unit 200 can supply the first voltage VSS or the
second voltage VNB to the driving voltage supplying unit 30 as the
output signal `LDB`. In addition, when the local decoding signal
`LDEC` is disabled, the driving voltage VPP can be supplied to the
driving voltage supplying unit 30. If the test mode signal
`TWLFLOAT` is enabled, then the local driving unit 200 can supply
the second voltage, i.e., the negative bias voltage VNB, as a low
voltage. Accordingly, it is possible to reduce the OFF leakage
current of the NMOS transistor that configures the test circuit
device 1. Thus, if the OFF leakage current is reduced, then the
micro-bridge MB present between the bit line and the word line can
be precisely detected.
[0026] The driving voltage supplying unit 30 can supply a voltage
that swings between the driving voltage VPP and the first voltage
VSS in response to the output of the local driving unit 200 and the
test mode signal `TWLFLOAT`. When the local decoding signal `LDEC`
is disabled, the driving voltage supplying unit 30 can supply the
first voltage VSS to the sub-word line driver 40. If the sub-word
line SWL is enabled and then the test mode signal `TWLFLOAT` is
enabled, then the driving voltage supplying unit 30 can prevent the
driving voltage VPP from being supplied to the sub-word line driver
40 to place the enabled sub-word line SWL in a floating state.
Here, the sub-word line SWL can be in the floating state to detect
the current leakage due to the micro-bridge MB.
[0027] The sub-word line driver 40 causes the sub-word line SWL to
be enabled in response to the output signal `MWLB` of the main word
line driving unit 100.
[0028] In FIG. 3, the main word line driving unit 100 can include a
first signal selector 110 receiving the main decoding signal `MDEC`
as an input, and a first low voltage supplying unit 120 that
supplies the first voltage VSS or the second voltage VNB to the
first signal selector 110 according to whether the test mode signal
`TWLFLOAT` is enabled or not. When the main decoding signal `MDEC`
is disabled, the first signal selector 110 can supply the driving
voltage VPP to the sub-word line driver 40 as the output signal
`MWLB`. When the main decoding signal `MDEC` is enabled, the first
signal selector 110 can supply the first voltage VSS or the second
voltage VNB to the sub-word line driver 40 as the output signal
"MWLB`.
[0029] The first low voltage supplying unit 120 can supply the
first or second voltage VSS or VNB to the first signal selector 110
in response to the test mode signal `TWLFLOAT`. The first low
voltage supplying unit 120 can supply the second voltage VNB to the
first signal selector 110 when the test mode signal `TWLFLOAT` is
enabled, and can supply the first voltage VSS to the first signal
selector 110 when the test mode signal `TWLFLOAT` is disabled.
[0030] The first signal selector 110 can be configured to include a
first PMOS transistor P1, wherein the main decoding signal `MDEC`
can be supplied through a gate terminal and the driving voltage VPP
can be supplied through a source terminal, and a first NMOS
transistor N1, wherein the main decoding signal `MDEC` can be
supplied through a gate terminal, a source terminal can be
connected to a first node A, and a drain terminal can be connected
to a drain terminal of the first PMOS transistor P1.
[0031] The first low voltage supplying unit 120 can include a fifth
NMOS transistor N5, wherein the test mode signal `TWLFLOAT` can be
supplied through a gate terminal, the second voltage VNB can be
supplied through a source terminal, and a drain terminal can be
connected to the first node A, and a sixth NMOS transistor N6,
wherein an inverted test mode signal `TWLFLOATB` can be supplied
through a gate terminal, the first voltage VSS can be supplied
through a source terminal, and a drain terminal can be connected to
the first node A.
[0032] The local driving unit 200 can include a second signal
selector 210 that can receive the local decoding signal `LDEC` as
an input, and a second low voltage supplying unit 220 that can
supply the first voltage VSS or the second voltage VNB to the
second signal selector 210 according to whether the test mode
signal `TWLFLOAT` is enabled or not. When the local decoding signal
`LDEC` is disabled, the second signal selector 210 can supply the
driving voltage VPP to the driving voltage supplying unit 30 as the
output signal `LDB`. When the local decoding signal `LDEC` is
enabled, the second signal selector 210 can supply the first
voltage VSS or the second voltage VNB to the driving voltage
supplying unit 30 as the output signal `LDB`.
[0033] The second low voltage supplying unit 220 can supply the
first voltage VSS or the second voltage VNB to the second signal
selector 210 in response to the test mode signal `TWLFLOAT`. The
second low voltage supplying unit 220 can supply the second voltage
VNB to the second signal selector 210 when the test mode signal
`TWLFLOAT` is enabled, and can supply the first voltage VSS to the
second signal selector 210 when the test mode signal `TWLFLOAT` is
disabled.
[0034] The second signal selector 210 can include a second PMOS
transistor P2, wherein the local decoding signal `LDEC` can be
supplied through a gate terminal and the driving voltage VPP can be
supplied through a source terminal, and a second NMOS transistor
N2, wherein the local decoding signal `LDEC` can be supplied
through a gate terminal, a source terminal can be connected to a
second node B, and a drain terminal can be connected to a drain
terminal of the second PMOS transistor P2.
[0035] The second low voltage supplying unit 220 can include a
seventh NMOS transistor N7, wherein the test mode signal `TWLFLOAT`
can be supplied through a gate terminal and a drain terminal can be
connected to the second node B, and an eighth NMOS transistor N8,
wherein an inverted test mode signal `TWLFLOATB` can be supplied
through a gate terminal and a drain terminal can be connected to
the second node B.
[0036] The driving voltage supplying unit 30 can include a detector
32 that can receive the test mode signal `TWLFLOAT`, and a voltage
selector 31 that can receive the output signal `LDB` of the local
driving unit 200. The detector 32 can determine whether to supply
the driving voltage VPP to the voltage selector 31 in response to
the test mode signal `TWLFLOAT`. For example, if the test mode
signal `TWLFLOAT` is enabled, then the detector 32 can not supply
the driving voltage VPP to the voltage selector 31. Conversely, if
the test mode signal `TWLFLOAT` is disabled, then the detector 32
can supply the driving voltage VPP to the voltage selector 31.
Therefore, when the test mode signal `TWLFLOAT` is enabled, the
driving voltage VPP is not supplied to the sub-word line driver 40
as the output signal `LD`, thereby detecting the micro-bridge MB
due to the floating state of the sub-word line SWL.
[0037] The detector 32 can include a fifth PMOS transistor P5,
wherein the test mode signal `TWLFLOAT` can be supplied through a
gate terminal and the driving voltage VPP can be supplied through a
source terminal.
[0038] The voltage selector 31 can include a third PMOS transistor
P3, wherein the output signal `LDB` of the local driving unit 200
can be supplied through a gate terminal and a source terminal can
be connected to the drain terminal of the fifth PMOS transistor P5,
and a third NMOS transistor N3, wherein the output signal LDB of
the local driver 40 can be supplied through a gate terminal, the
first voltage VSS can be supplied through a source terminal, and a
drain terminal can be connected to a drain terminal of the third
PMOS transistor P3.
[0039] The sub-word line driver 40 can include a third signal
selector 41 that receives the output signal `MWLB` of the main word
line driving unit 100 and a signal supplying unit 42 that can
receive the output signal `LDB` of the local driving unit 200. The
third signal selector 41 can supply a signal, i.e., the output
signal `LD`, that swings between a voltage supplied from the
driving voltage supplying unit 30 and the first voltage VSS to the
sub-word line SWL in response to the output signal `MWLB` of the
main word line driving unit 100. The signal supplying unit 42 can
determine whether to produce the output of the third signal
selector 41 to the sub-word line SWL in response to the output
signal `LDB` of the local driving unit 200.
[0040] The third signal selector 41 can include a fourth PMOS
transistor P4, wherein the output signal `MWLB` of the main word
line driving unit 100 can be supplied through a gate terminal, the
output signal `LD` of the driving voltage supplying unit 30 can be
supplied through a source terminal, and a drain terminal can be
connected to a third node C, and a fourth NMOS transistor N4,
wherein the output signal `MWLB` of the main word line driving unit
100 can be supplied through a gate terminal, the first voltage VSS
can be supplied through a source terminal, and a drain terminal can
be connected to the third node C.
[0041] The signal supplying unit 42 can include a ninth NMOS
transistor N9, wherein the output signal `LDB` of the local driving
unit 200 can be supplied through a gate terminal and a drain
terminal can be connected to the third node C. Here, the sub-word
line driver 40 can supply a sub-word line enable signal `SWL_EN` to
the sub-word line SWL through the third node C.
[0042] An exemplary operation of a test circuit device for a
semiconductor memory apparatus 1 will be described with reference
to FIGS. 2 and 3.
[0043] In a state where data "0" is stored in a memory cell of a
semiconductor memory device at an initial stage, when an active
command signal `ACT` is input, the main decoding signal `MDEC` and
the local decoding signal `LDEC` can be enabled at a high level. In
this case, the disabled state of the test mode signal `TWLFLOAT`
can be maintained. Since the test mode signal `TWLFLOAT` is
disabled, the fifth NMOS transistor N5 of the first low voltage
supplying unit 120 of the main word line driving unit 100 can be
turned OFF, and the sixth NMOS transistor N6 can be turned ON.
Accordingly, the first voltage VSS can be supplied to the first
signal selector 110. If the main decoding signal `MDEC` is enabled
at a high level, then the first PMOS transistor P1 of the first
signal selector 110 can be turned OFF and the first NMOS transistor
N1 can be turned ON. Accordingly, the first voltage VSS can be
supplied to the sub-word line driver 40 through the first NMOS
transistor N1 that is turned ON.
[0044] Since the test mode signal `TWLFLOAT` is disabled, the
seventh NMOS transistor N7 of the second low voltage supplying unit
220 of the local driving unit 200 can be turned OFF, and the eighth
NMOS transistor N8 can be turned ON. Accordingly, the first voltage
VSS can be supplied to the second signal selector 210. If the local
decoding signal `LDEC` is enabled at a high level, then the second
PMOS transistor P2 of the second signal selector 210 can be turned
OFF and the second NMOS transistor N2 can be turned ON. Thus, the
first voltage VSS can be supplied to the driving voltage supplying
unit 30 through the second NMOS transistor N2 that is turned
ON.
[0045] In addition, since the driving voltage supplying unit 30 can
receive the output signal `LDB`, which can be enabled at a low
level through the local driving unit 200, the PMOS transistor P3 of
the voltage selector 31 of the driving voltage supplying unit 30
can be turned ON, and the third NMOS transistor N3 can be turned
OFF. Furthermore, since the test mode signal `TWLFLOAT` can be
disabled, the fifth PMOS transistor P5 of the detector 32 can be
turned ON and the driving voltage VPP can be supplied to the
sub-word line driver 40 through the fifth PMOS transistor P5 and
the third PMOS transistor P3.
[0046] The sub-word line driver 40 can receive the output signal
`MWLB` of the main word line driving unit 100, which can be enabled
at a low level. Accordingly, the fourth PMOS transistor P4 of the
third signal selector 41 of the sub-word line driver 40 can be
turned ON, and the fourth NMOS transistor N4 can be turned OFF. In
addition, the ninth NMOS transistor N9 that receives the output
signal `LDB` of the local driving unit 200 enabled at a low level
can be turned OFF. The driving voltage VPP that is supplied from
the driving voltage supplying unit 30 through the turned ON fourth
PMOS transistor P4 can be supplied as the sub-word line enable
signal `SWL_EN`. Here, the sub-word line enable signal `SWL_EN`
that is enabled at a high level by the driving voltage VPP can
cause the sub-word line SWL to be enabled at the same level as the
driving voltage VPP.
[0047] If the sub-word line SWL is enabled, then a bit line BL and
a bit (bar) line BL can be amplified by a bit line sense amplifier.
Accordingly, after the charge sharing operation, the data "0" can
be stored in the memory cell node again. Then, in order to detect
the micro-bridge MB, the test mode signal `TWLFLOAT` can be enabled
at a high level. If the test mode signal `TWLFLOAT` is enabled at a
high level, then the fifth PMOS transistor P5 of the detector 32
can be turned OFF, and the driving voltage VPP that is supplied to
the sub-word line SWL can be intercepted. Accordingly, the enabled
sub-word line SWL can be in a floating state. If the floating state
of the sub-word line SWL is maintained for a long time period, the
sub-word line SWL can become disabled or can be maintained in the
enabled state, according to the presence of the micro-bridge MB
between the word line and the bit line. Thus, if the micro-bridge
MB is present, the current path can be generated, thereby
decreasing the level of the sub-word line SWL to a ground voltage
VSS level.
[0048] When the sub-word line SWL is enabled, the third NMOS
transistor N3 of the voltage selector 31, the fourth NMOS
transistor N4 of the third voltage selector 41, and the ninth NMOS
transistor N9 of the signal supplying unit 42 can all be turned
OFF. However, the OFF leakage current exists due to the
characteristics of the NMOS transistors. Even when the micro-bridge
MB is not present, the level of the sub-word line SWL may be
reduced to the ground voltage VSS level. Thus, if the test mode
signal `TWLFLOAT` is enabled at a high level, then the first low
voltage supplying unit 120 and the second low voltage supplying
unit 220 can supply the second voltage VNB to the first signal
selector 110 and the second signal selector 210, instead of the
first voltage VSS. For example, when the test mode signal
`TWLFLOAT` is enabled, the sixth NMOS transistor N6 of the first
low voltage supplying unit 120 can be turned OFF and the fifth NMOS
transistor N5 can be turned ON. Thus, the second voltage VNB can be
supplied to the source terminal of the first NMOS transistor N1 of
the first signal selector 110. Similarly, the eighth NMOS
transistor N8 of the first signal selector 110 can be turned OFF,
and the seventh NMOS transistor N7 can be turned ON to supply the
second voltage VNB to the source terminal of the second NMOS
transistor N2 of the second signal selector instead of the first
voltage VSS.
[0049] By supplying the second voltage VNB to the source terminals
of the first and second NMOS transistors N1 and N2, instead of the
first voltage VSS, the fourth NMOS transistor N4 of the third
signal selector that receives the output signal `MWLB` of the first
signal selector through the gate terminal, the third NMOS
transistor N3 of the voltage selector 31 that receives the output
signal `LDB` of the second signal selector through the gate
terminal, and the ninth NMOS transistor N9 of the signal supplying
unit 42 can all be turned OFF quickly. Thus, the OFF leakage
current from the NMOS transistors N3, N4, and N9 can be
significantly reduced.
[0050] If the data "1" is written into a memory cell by a write
operation and the precharge operation PCG is performed, then the
test mode signal `TWLFLOAT` can be disabled. If the micro-bridge MB
is not present, then the sub-word line SWL can be maintained at the
driving voltage VPP level. Thus, when the active command signal ACT
is input again, the data "1" can be read from the memory cell node.
In contrast, if the data "1" cannot be read from the memory cell
node, then the micro-bridge MB can be exactly detected.
[0051] According to the one embodiment, in order to detect the
micro-bridge MB, when the test mode signal is enabled, the leakage
current prevent unit can supply the negative bias voltage to
rapidly reduce the OFF leakage current of the NMOS transistors,
thereby making it possible to detect when the level of the sub-word
line is reduced due to the presence of the micro-bridge.
[0052] FIG. 4 is a schematic circuit diagram of another exemplary
test circuit device for a semiconductor memory apparatus according
to one embodiment. In FIG. 4, a test circuit device 2 for a
semiconductor memory apparatus can be configured to include a main
word line driving unit 1100, a first low voltage controlling unit
1200, a local driving unit 2100, a second low voltage controlling
unit 2200, a driving voltage supplying unit 30, and a sub-word line
driver 40.
[0053] In FIG. 4, the main word line driving unit 1100 can be
configured to a signal that swings between the driving voltage VPP
and one of the first voltage VSS and the second voltage VNB in
response to the main decoding signal MDEC and the test mode signal
TWLFLOAT. The first low voltage controlling unit 1200 can be
configured to supply the second voltage 1200 to the main word line
driving unit 1100 in response to the test mode signal TWLFLOAT.
[0054] The local driving unit 2100 can be configured to generate a
signal that swings between the driving voltage VPP and one of the
first voltage VSS and the second voltage VNB in response to a local
decoding signal LDEC and the test mode signal TWLFLOAT. The second
low voltage controlling unit 2200 that supplies the second voltage
VNB to the local driving unit 2100 in response to the test mode
signal TWLFLOAT.
[0055] In FIG. 4, the main word line driving unit 1100 can be
configured to include a first PMOS transistor P1, a first and a
sixth NMOS transistors N1 and N6, and the first low voltage
controlling unit 1200 can be configured to include a fifth NMOS
transistor N5. The local driving unit 2100 can be configured to
include a second PMOS transistor P2, a second and a eighth NMOS
transistors N2 and N8, and the second low voltage controlling unit
2200 can be configured to include a seventh NMOS transistor N7.
[0056] While certain embodiments have been described above, it will
be understood that the embodiments described are by way of example
only. Accordingly, the device and method described herein should
not be limited based on the described embodiments. Rather, the
devices and methods described herein should only be limited in
light of the claims that follow when taken in conjunction with the
above description and accompanying drawings.
* * * * *