U.S. patent application number 12/226202 was filed with the patent office on 2009-08-13 for apparatus for producing trichlorosilane.
This patent application is currently assigned to MITSUBISHI MATERIALS CORPORATION. Invention is credited to Toshiyuki Ishii, Hideo Ito, Yuji Shimizu.
Application Number | 20090202404 12/226202 |
Document ID | / |
Family ID | 39344093 |
Filed Date | 2009-08-13 |
United States Patent
Application |
20090202404 |
Kind Code |
A1 |
Ishii; Toshiyuki ; et
al. |
August 13, 2009 |
Apparatus for Producing Trichlorosilane
Abstract
An apparatus for producing trichlorosilane, including: a
reaction vessel in which a supply gas containing silicon
tetrachloride and hydrogen is supplied to produce a reaction
product gas containing trichlorosilane and hydrogen chloride; a
heating mechanism that heats the interior of the reaction vessel; a
gas supply section that supplies the supply gas in the reaction
vessel; and a gas discharge section that discharges the reaction
product gas from the reaction vessel to the outside, wherein a
reaction passageway is formed in the interior of the reaction
vessel, in which a plurality of small spaces partitioned by a
plurality of reaction tubular walls that have different inner
diameters and are substantially concentrically disposed communicate
by flow penetration sections formed alternately in lower portions
and upper portions of the reaction tubular walls in order from the
inside, and the gas supply section and the gas discharge section
are connected to the reaction passageway.
Inventors: |
Ishii; Toshiyuki;
(Yokkaichi-shi, JP) ; Ito; Hideo; (Kuwana-shi,
JP) ; Shimizu; Yuji; (Naka-gun, JP) |
Correspondence
Address: |
EDWARDS ANGELL PALMER & DODGE LLP
P.O. BOX 55874
BOSTON
MA
02205
US
|
Assignee: |
MITSUBISHI MATERIALS
CORPORATION
Tokyo
JP
|
Family ID: |
39344093 |
Appl. No.: |
12/226202 |
Filed: |
October 23, 2007 |
PCT Filed: |
October 23, 2007 |
PCT NO: |
PCT/JP2007/070644 |
371 Date: |
October 10, 2008 |
Current U.S.
Class: |
422/198 |
Current CPC
Class: |
B01J 2219/00135
20130101; B01J 12/007 20130101; C01B 33/1071 20130101; B01J
2219/0272 20130101; B01J 2219/00155 20130101; B01J 19/02 20130101;
B01J 19/243 20130101 |
Class at
Publication: |
422/198 |
International
Class: |
B01J 19/24 20060101
B01J019/24 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 31, 2006 |
JP |
2006-297034 |
Oct 3, 2007 |
JP |
2007-259445 |
Claims
1. An apparatus for producing trichlorosilane, comprising: a
reaction vessel in which a supply gas containing silicon
tetrachloride and hydrogen is supplied to produce a reaction
product gas containing trichlorosilane and hydrogen chloride; a
heating mechanism that heats the interior of the reaction vessel; a
gas supply section that supplies the supply gas in the reaction
vessel; and a gas discharge section that discharges the reaction
product gas from the reaction vessel to the outside, wherein a
reaction passageway is formed in the interior of the reaction
vessel, in which a plurality of small spaces partitioned by a
plurality of reaction tubular walls that have different inner
diameters and are substantially concentrically disposed communicate
by flow penetration sections formed alternately in lower portions
and upper portions of the reaction tubular walls in order from the
inside, and the gas supply section and the gas discharge section
are connected to the reaction passageway.
2. The apparatus for producing trichlorosilane according to claim
1, comprising: a plurality of gas discharge sections, the gas
supply section being in communication with the innermost small
space of the plurality of small spaces, and the plurality of gas
discharge sections being connected to the outermost small
space.
3. The apparatus for producing trichlorosilane according to claim
1, comprising: a storage container that stores the reaction vessel
and the heating mechanism, and an argon supply mechanism that
supplies argon in the storage container.
4. The apparatus for producing trichlorosilane according to claim
1, wherein a member forming the reaction vessel is formed of
carbon.
5. The apparatus for producing trichlorosilane according to claim
4, wherein a surface of the carbon is coated with silicon
carbide.
6. The apparatus for producing trichlorosilane according to claim
3, wherein a member forming the reaction vessel is formed of
carbon.
7. The apparatus for producing trichlorosilane according to claim
6, wherein a surface of the carbon is coated with silicon
carbide.
8. The apparatus for producing trichlorosilane according to claim
2, comprising: a storage container that stores the reaction vessel
and the heating mechanism, and an argon supply mechanism that
supplies argon in the storage container.
9. The apparatus for producing trichlorosilane according to claim
2, wherein a member forming the reaction vessel is formed of
carbon.
10. The apparatus for producing trichlorosilane according to claim
9, wherein a surface of the carbon is coated with silicon
carbide.
11. The apparatus for producing trichlorosilane according to claim
8, wherein a member forming the reaction vessel is formed of
carbon.
12. The apparatus for producing trichlorosilane according to claim
11, wherein a surface of the carbon is coated with silicon carbide.
Description
TECHNICAL FIELD
[0001] The present invention relates to an apparatus for producing
trichlorosilane, which converts silicon tetrachloride into
trichlorosilane.
[0002] This application claims priority on Japanese Patent
Application No. 2006-297034, filed Oct. 31, 2006, and on Japanese
Patent Application No. 2007-259445, filed Oct. 3, 2007, the
disclosure of which is incorporated by reference herein.
BACKGROUND ART
[0003] Trichlorosilane (SiHCl.sub.3), which is used as a raw
material for the production of highly pure silicon (Si), can be
produced by conversion through a reaction of silicon tetrachloride
(SiCi.sub.4: tetrachlorosilane) with hydrogen.
[0004] In other words, silicon is produced by the reductive
reaction and the thermolysis reaction of trichlorosilane
represented by reaction schemes (1) and (2) shown below, and
trichlorosilane is produced by the conversion reaction represented
by reaction scheme (3) shown below.
SiHCl.sub.3+H.sub.2.fwdarw.Si+3HCl (1)
4SiHCl.sub.3.fwdarw.Si+3SiCl.sub.4+2H.sub.2 (2)
SiCl.sub.4+H.sub.2.fwdarw.SiHCl.sub.3+HCl (3)
[0005] As an apparatus for producing this trichlorosilane, for
example, Patent Document 1 (Japanese Patent No. 3,781,439) proposes
a reactor in which a reaction chamber surrounded by a heating
element is of a dual chamber design having an outer chamber and an
inner chamber formed by two concentrically positioned pipes, a
supply gas of hydrogen and silicon tetrachloride is supplied to the
reaction chamber from below via a heat exchanger disposed in the
bottom of this reaction chamber, and a reaction product gas is
discharged from the reaction chamber in a downward direction. In
this reactor, the supply gas supplied to the outer chamber is
heated by a heating element thereby converting into a reaction
product gas, which is introduced into the inner chamber via a
diverter and then discharged.
DISCLOSURE OF THE INVENTION
[0006] The following problems remain in the prior art described
above.
[0007] Namely, in the above conventional apparatus for producing
trichlorosilane, since the supply gas introduced into the outer
chamber is discharged after the gas flow being made opposite by the
diverter in the upper portion and the supply gas flowing in the
inner chamber, the apparatus has a short gas passageway and has a
structure that it is difficult to obtain sufficient retention time
and heating required to obtain a sufficient conversion reaction.
With such a structure, it is required to further increase the
length of a dual pipe forming a reactor so as to increase the
length of the gas passageway. In this case, there is a disadvantage
that the size of the entire apparatus increases.
[0008] In light of these problems, the present invention has been
made and an object thereof is to provide an apparatus for producing
trichlorosilane in which a long gas passageway required to the
conversion reaction can be obtained without increasing the size of
the entire apparatus, and also sufficient retention time and
heating can be obtained.
[0009] The present invention employed the following constitution so
as to solve the above problems. Namely, the apparatus for producing
trichlorosilane of the present invention includes: a reaction
vessel in which a supply gas containing silicon tetrachloride and
hydrogen is supplied to produce a reaction product gas containing
trichlorosilane and hydrogen chloride; a heating mechanism that
heats the interior of the reaction vessel; a gas supply section
that supplies the supply gas in the reaction vessel; and a gas
discharge section that discharges the reaction product gas from the
reaction vessel to the outside, wherein a reaction passageway is
formed in the interior of the reaction vessel, in which a plurality
of small spaces partitioned by a plurality of reaction tubular
walls that have different inner diameters and are substantially
concentrically disposed communicate by penetration sections formed
alternately in lower portions and upper portions of the reaction
tubular walls in order from the inside, and the gas supply section
and the gas discharge section are connected to the reaction
passageway.
[0010] In this apparatus for producing trichlorosilane, the supply
gas supplied to the reaction passageway in the reaction tubular
walls sequentially flows into an outer or inner space partitioned
by the reaction tubular walls via a flow penetration section while
being heated, and is converted into a reaction product gas through
the reaction. In this case, since the flow penetration sections are
alternately formed in upper portions and lower portions of the
reaction tubular walls in order from the inside, the flow direction
of the gas repetitively changes between downward direction and
upward direction, alternately, every time the gas moves to the
outer or inner small space. Therefore, the long reaction passageway
is ensured in the reaction vessel and the heat conducting area
increases by a plurality of reaction tubular walls, and thus
sufficient retention time and heating required to react the supply
gas can be ensured and a conversion ratio can be more improved. By
continuously forming the reaction passageway so as to meander up
and down, the size of the entire reaction vessel can be reduced and
also heat dissipation of the entire reaction vessel can be
reduced.
[0011] In this case, each of the flow penetration sections may be a
through-hole formed on the reaction tubular wall or a notch and the
like formed at the upper end portion or the lower end portion of
the reaction tubular wall. The gas supply section may be a gas
supply pipe and the gas discharge section may be a gas discharge
pipe.
[0012] The apparatus for producing trichlorosilane of the present
invention may be provided with a plurality of gas discharge
sections, and the gas supply section may be in communication with
the innermost small space of the plurality of small spaces and the
plurality of gas discharge sections may be connected to the
outermost small space.
[0013] In this apparatus for producing trichlorosilane, since the
gas supply section is in communication with the innermost small
space of the reaction passageway and the plurality of gas discharge
sections are connected to the outermost small space, it is possible
to increase the cooling effect by dividing the discharge of the
reaction product gas in a high-temperature state between a
plurality of gas discharge sections and to rapidly cool the
reaction product gas by enabling heat exchange between the outside
and a plurality of places. In other words, in the conversion
reaction of silicon tetrachloride into trichlorosilane, although a
reverse reaction where trichlorosilane returns to silicon
tetrachloride occurs if the reaction product gas to be discharged
is not cooled rapidly, the rate of conversion into trichlorosilane
can be improved by rapidly cooling the reaction product gas through
discharging from the plurality of gas discharge sections.
Particularly in the case of a structure in which heating is
performed from the outside of the reaction vessel using a heating
mechanism, the rapid cooling operation can be obtained more
effectively by rapidly cooling the reaction product gas in a
highest-temperature state at the plurality of gas discharge
sections.
[0014] Furthermore, the apparatus for producing trichlorosilane of
the present invention may be provided with a storage container that
stores the reaction vessel and the heating mechanism, and may be
provided with an argon supply mechanism that supplies argon to the
storage container. Since argon is supplied in the storage container
by the argon supplying mechanism in this apparatus for producing
trichlorosilane, leakage of the supply gas and the reaction product
gas from the reaction vessel can be prevented by the periphery of
the reaction vessel being in a pressurized state by argon. Thus, it
is possible to prevent the reaction of the supply gas and the
reaction product gas which have leaked from the reaction vessel
with carbon used in the reaction mechanism and the like on the
outside of the reaction vessel.
[0015] The members that form the reaction vessel of the apparatus
for producing trichlorosilane may be formed of carbon.
[0016] The surface of the carbon of the apparatus for producing
trichlorosilane may be coated with silicon carbide. Since the
reaction vessel is formed of carbon coated with silicon carbide
(SiC) in this apparatus for producing trichlorosilane, the
production of impurities such as methane, methylchlorosilane,
silicon carbide, and the like by the reaction of carbon with
hydrogen, chlorosilane and hydrogen chloride (HCl) in the supply
gas and the reaction product gas can be prevented and thus a highly
pure trichlorosilane can be obtained.
[0017] According to the present invention, the following effects
are exerted.
[0018] According to the apparatus for producing trichlorosilane,
since the flow penetration sections are alternately formed in upper
portions and lower portions of a plurality of reaction tubular
walls in order from the inside, when the flow direction of the gas
changes repetitively and alternately between downward direction and
upward direction, the long reaction passageway is ensured in the
reaction vessel and also the heat conducting area increases on a
plurality of reaction tubular walls. Therefore, a long reaction
passageway can be ensured without increasing the size of the entire
reaction vessel, and also sufficient retention time and heating
required to react the supply gas can be ensured and a conversion
ratio to trichlorosilane can be more improved.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIG. 1 is a schematic sectional view showing an embodiment
of an apparatus for producing trichlorosilane of the present
invention.
[0020] FIG. 2 is a sectional view taken along lines A-A in FIG.
1.
[0021] FIG. 3 is a sectional view taken along lines B-B in FIG.
1.
BEST MODE FOR CARRYING OUT THE INVENTION
[0022] An embodiment of the apparatus for producing trichlorosilane
of the present invention will be described below with reference to
FIG. 1 or 2.
[0023] As shown in FIG. 1, the apparatus for producing
trichlorosilane of the present embodiment includes a reaction
vessel 1 in which a supply gas containing silicon tetrachloride and
hydrogen is supplied to produce a reaction product gas containing
trichlorosilane and hydrogen chloride by conversion reaction; a
heating mechanism 2 disposed in the periphery of the reaction
vessel 1 for heating the reaction vessel 1; a gas supply pipe 3 for
supplying the supply gas in the reaction vessel 1; a plurality of
gas discharge pipes 4 for discharging the reaction product gas from
the reaction vessel 1 to the outside; a heat insulating material 5
disposed so as to cover the periphery of the reaction vessel 1 and
the heating mechanism 2; a storage container 6 for storing the
reaction vessel 1, the heating mechanism 2 and the heat insulating
material 5; and an argon supplying mechanism 7 for supplying argon
(Ar) in the storage container 6.
[0024] As shown in FIGS. 1 and 2, in order to partition the inner
space into a plurality of small spaces 8a to 8d, the reaction
vessel 1 is provided with cylindrical first to fourth reaction
tubular walls 9a to 9d which have different inner diameter. In
other words, by the first to third three reaction inner walls 9a to
9c, the space (space which is more inside of the outermost fourth
reaction tubular wall 9d) in the reaction vessel 1 is partitioned
into one columnar small space 8a in the center and three tubular
small spaces 8b to 8d outside the center. The gas supply pipe 3 is
in communication with the lower portion of the columnar small space
8a inside the innermost first reaction tubular wall 9a. The gas
discharge pipes 4 are connected to the outermost small space
8d.
[0025] Flow through-holes 10 are alternately formed in
upperportions and lower portions of these first to third reaction
tubular walls 9a to 9c in order from the inside. In other words, a
plurality of through-holes 10 are formed in an upper portion of the
first reaction tubular wall 9a in a circumferential direction,
while a plurality of flow through-holes 10 are formed in an lower
portion of the second reaction tubular wall 9b in a circumferential
direction. A plurality of flow through-holes 10 are formed in an
upper portion of the third reaction tubular wall 9c in a
circumferential direction. Thus, a reaction passageway 20 in which
small spaces 8a to 8d are in a communication state in order from
the inside is formed by these flow through-holes 10.
[0026] Therefore, it is set so that the supply gas supplied to the
small space 8a inside the first reaction tubular wall 9a, while
being heated, becomes a reaction product gas by reaction while
sequentially flowing to the outer small spaces 8b to 8d via a
plurality of flow through-holes 10. Also, by the gas flowing
between the flow through-holes 10 disposed alternately in upper
portions and lower portions of the reaction tubular walls in order
from the inside, it is set so that the flow direction of the gas
repetitively changes to the upward direction and the down ward
direction. In the drawing, the flow direction of the gas is
indicated by arrow.
[0027] The first to fourth reaction tubular walls 9a to 9d are
supported in a state where the lower portions are fit in a
ring-shaped grooves 21 on the upper surface of the lower supporting
circular plate 11 and the upper portions are fit in a ring-shaped
grooves 22 on the lower surface of the upper supporting circular
plate 12. The upper portion of the upper supporting circular plate
12 is fixed to the heat insulating material 5 on the reaction
vessel 1.
[0028] The lower supporting circular plate 11 is provided with a
central hole 11b and the small space 8a inside the first reaction
tubular wall 9a is in communication with the gas supply pipe 3 via
the central hole 11b.
[0029] The gas supply pipe 3 and the gas discharge pipe 4 are in
communication with a supply hole 6a and a discharge hole 6b formed
in the bottom of the storage container 6 respectively, while the
top ends are fixed to the bottom of the storage container 6. A
supply connection pipe 13 is disposed in a central portion of the
reaction vessel 1 by penetrating the heat insulating material 5 in
the bottom of this reaction vessel. As shown in FIGS. 1 and 3, two
tubular bodies 14A and 14B which penetrate the heat insulating
material 5 are disposed in concentricity with this supply
connection pipe 13. A tubular discharge connection passageway 23 is
formed between these tubular bodies 14A and 14B. The upper end
openings of the supply hole 6a and the discharge hole 6b are in
communication with the lower end openings of the supply connection
pipe 13 and the discharge connection passageway 23 respectively.
Tops of tubular bodies 14A and 14B forming the discharge connection
passageway 23 are fixed to the lower portion of the lower
supporting circular plate 11, and the discharge connection
passageway 23 is connected to the outermost small space 8d (inside
of the outermost fourth reaction tubular wall 9d) via the outer
through-holes 11a of the lower supporting circular plate 11. Also,
the upper end opening of the supply connection pipe 13 is fixed to
the lower center of the lower supporting circular plate 11, and
then connected to the small space 8a on the inside of the first
reaction tubular wall 9a via the center through-hole 11b of the
lower supporting circular plate 11.
[0030] As shown in FIG. 3, eight of the gas discharge pipes 4 are
disposed at equal intervals in the circumferential direction of the
discharge connection passageway 23.
[0031] A supply source (not shown) of the supply gas is connected
to the gas supply pipe 3. Although the reaction product gas is
discharged from the gas discharge pipe 4 to the outside by the
pressure difference in the pipe, a discharge pump may be connected
to the gas discharge pipe 4.
[0032] With respect to each of the members forming the reaction
vessel 1, in this embodiment, the first to fourth reaction tubular
walls 9a to 9d, the lower supporting circular plate 11 and the
upper supporting circular plate 12, and the like are formed of
carbon and the surface of the carbon is coated with silicon
carbide.
[0033] The storage container 6 is constituted of a tubular wall 31,
and a bottom plate 32 and a ceiling plate 33 which block both ends
thereof, and is made of stainless steel.
[0034] The heating mechanism 2 is provided with a heater 15, which
is a heating element, in the periphery of the reaction vessel 1 so
as to enclose the reaction vessel 1 and with an electrode 16, which
is connected to the bottom of the heater 15 and is for flowing an
electric current to the heater 15. This electrode 16 is connected
to a power supply (not shown). The heater 15 is formed of carbon.
The heating mechanism 2 carries out heating control so that the
temperature inside the reaction vessel 1 becomes a temperature in
the range from 800 to 1,400.degree. C. If the temperature inside
the reaction vessel 1 is set to 1,200.degree. C. or higher, the
conversion ratio is improved. Also, disilanes may be introduced to
recover silanes.
[0035] The heat insulating material 5 is formed of, for example,
carbon, and is fixed to the inner wall surface of the tubular wall
31, the upper surface of the bottom plate 32, and the lower surface
of the ceiling plate 33 of the storage container 6 so as to be
pasted inside the storage container 6.
[0036] The lower supporting circular plate 11 of the reaction
vessel 1 is disposed in a state where it floats from the heat
insulating material 5 (heat insulating material on the bottom plate
section 32 of the storage container 6) disposed thereunder, forming
a interstitial heat insulation space.
[0037] A temperature sensor S which protrudes into the outermost
small space 8 in the reaction passageways 20 is fixed to the lower
surface of the upper supporting circular plate 12. The temperature
is controlled by the heating mechanism 2 while the temperature is
measured by this temperature sensor S.
[0038] The argon supply mechanism 7 is provided with an argon
supply pipe 17, the tip end thereof protruding into the storage
container 6 by penetrating the bottom of the storage container 6
and the heat insulating material 5, and with an argon supply source
18 which is connected to the argon supply pipe 17. This argon
supply mechanism 7 carries out argon supply control so that inside
space of the storage container becomes a predetermined pressurized
state. A container pump (not shown) for carrying out replacement of
the inside atmosphere or argon exhaustion is connected to the top
of the storage container 6.
[0039] In this embodiment, since flow through-holes 10 are
alternately formed in upper portions and lower portions of the
first to third reaction tubular walls 9a to 9c in order from the
inside, the flow direction of the gas repetitively changes between
downward direction and upward direction, alternately, every time
the gas moves to the outside of the reaction passageway 20.
Therefore, the long reaction passageway 20 is ensured in the
reaction vessel 1 and the heat conducting area increases on a
plurality of the first to fourth reaction tubular walls 9a to 9d,
and thus sufficient retention time and heating required to react
the supply gas can be ensured and a conversion ratio can be more
improved.
[0040] By continuously forming the reaction passageway 20 so as to
meander up and down, the size of the entire reaction vessel 1 can
be reduced and also heat dissipation of the entire reaction vessel
1 can be reduced.
[0041] Since the gas supply pipe 3 is in communication with the
inner small space 8a of the innermost first reaction tubular wall
9a and the plurality of gas discharge pipes 4 are connected to the
outermost small space 8d, it is possible to rapidly cool the
reaction product gas in a high-temperature state by discharging
through the discharge pipes and making heat exchange between the
outside and the plurality of pipes. In other words, by rapidly
cooling the reaction product gas by discharging from a plurality of
the gas discharge pipes 4, the reverse reaction to convert to
silicon tetrachloride is suppressed and thus the conversion ratio
can be improved.
[0042] Particularly, since the reaction product gas in a
highest-temperature state obtained by an external heating mechanism
2 is transferred to the plurality of gas discharge pipes 4 from the
outermost small space 8d, the reaction product gas in a
highest-temperature state is rapidly cooled in the plurality of gas
discharge pipes 4, and thus more rapid cooling operation is
obtained and a stable conversion reaction can be obtained.
[0043] Also, since argon is supplied to the storage container 6 by
the argon supplying mechanism 7, leakage of the supply gas and the
reaction product gas from the reaction vessel 1 can be prevented by
the periphery of the reaction vessel being in a pressurized state
by argon. Thus, it is possible to prevent reaction of the supply
gas and the reaction product gas which have leaked from the
reaction vessel 1 with carbon used in the heating mechanism 2 and
the like outside the reaction vessel 1.
[0044] When argon is supplied as a purge gas, since argon is
supplied from the bottom of the storage container 6 by the argon
supply mechanism 7, natural convection occurs in an upward
direction by heating with the heater 15. Also, by suction from a
container pump connected to the top of the storage container 6, a
high purge effect can be obtained by the purge gas flowing out
smoothly from the bottom to the top.
[0045] Furthermore, since constituent members (first to fourth
reaction tubular walls 9a to 9d, lower supporting circular plate 11
and upper supporting circular plate 12 and the like) of the
reaction vessel 1 is formed of carbon coated with silicon carbide
(SiC), the production of impurities such as methane,
methylchlorosilane, silicon carbide, and the like by the reaction
of carbon with hydrogen, chlorosilane and hydrogen chloride (HCl)
in the supply gas and the reaction product gas can be prevented,
and thus a highly pure trichlorosilane can be obtained.
[0046] The technical scope of the present invention is not limited
to the above embodiments and various modifications which do not
depart from the spirit of the present invention can be added.
[0047] For example, while four first to fourth reaction tubular
walls 9a to 9d were used in the above embodiments, three or five or
more reaction tubular walls may be used. When the number of
reaction tubular walls is large, whereas the energy efficiency
increases because of the increased heat transfer area, the heating
efficiency decreases since it becomes difficult to transfer the
radiation heat from the heating mechanism 2 to the inside. Thus, an
appropriate number of reaction tubular walls are disposed according
to gas flow amount and the size of the entire apparatus.
[0048] In the above embodiments, as described above, it is
preferable to set that the supply gas is supplied from the
innermost side of the reaction passageway 20 in the reaction vessel
1 and gradually flows to the outside through the flow through-holes
10 while changing the flow direction between upward direction and
downward direction. Alternatively, it is possible to set that the
supply gas is supplied from the outside and gradually flows to the
inside.
[0049] Also, a cooling mechanism may be added by forming a
refrigerant passageway for the flowing of a refrigerant such as
water inside the wall of the storage container 5.
[0050] Furthermore, the flow through-holes 10 in both reaction
tubular walls which form passageway between cylindrical surfaces of
the walls, may be formed in not only up and down positions but in
the circumferential direction so as to be dislocated with each
other. In this situation, the passageway between the flow
through-holes 10 can be made longer. Also, as an alternative to the
flow through-holes, flow penetration sections may be constituted of
notches formed in the upper end portion or the lower end portion of
the reaction tubular walls. The flow penetration sections of the
present invention may include both through-holes and notches.
[0051] The above-described embodiment employed a constitution that
the reaction tubular walls 9a to 9d are fit in the ring-shaped
grooves 22 of the upper supporting circular plate 12 and the
ring-shaped grooves 21 of the lower supporting circular plate 11.
The ring-shaped grooves may not only be ring-shaped grooves having
a rectangular cross section as shown in FIG. 1. As an alternative,
the reaction tubular walls may be provided with end surfaces having
semicircular cross section, and the ring-shaped grooves may have a
semicircular cross section.
[0052] Each of the ring-shaped grooves has the function of
disposing each reaction tubular walls in concentric alignment. As
an alternative to forming the ring-shaped grooves, for example, the
reaction tubular wall may be placed on the top surface of the lower
supporting circular plate and a ring-shaped spacer for restricting
a relative positional relation may be interposed between the
reaction tubular walls.
INDUSTRIAL APPLICABILITY
[0053] According to the apparatus for producing trichlorosilane of
the present invention, it is possible to provide an apparatus for
producing trichlorosilane in which a long gas passageway can be
ensured without increasing the size of the entire apparatus, and
also sufficient retention time and heating required to react the
supply gas can be ensured and a conversion ratio of silicon
tetrachloride to trichlorosilane can be improved.
* * * * *